TW468210B - Manufacturing method for reverse tapered rampart - Google Patents

Abstract

The present invention provides a manufacturing method for reverse tapered rampart which includes the following steps: forming a negative photoresist layer with the thickness larger than 2 micrometer on the substrate; conducting the developing process; using the photomask with predetermined pattern and the exposure energy dose being in the range between 15 and 120 mJ/cm<SP>2</SP>; subsequent baking on the substrate after developing; and, conducting the following developing steps.

Description

46 82 1 Ο

FIELD OF THE INVENTION The present invention relates to a method for manufacturing a reverse tapered spacer, and more particularly to a method for manufacturing a reverse tapered spacer using a negative photoresist. Description of suitable technologies In the display panel manufacturing process of organic light emitting diodes (organic light emitting diodes), the process of forming barriers is included. Its function is to make the metal cathode and the organic's in the subsequent coating process. .Isolate the effect. In the conventional lithography process, it is necessary to borrow

3 shadows and etching chemicals are used to achieve the effect of defining the isolation pattern ::: For organic light-emitting diodes, its metal cathode and organic light-emitting layer wind pen ^ can not resist the use of the lithography process Development and etching: two ", especially for organic light-emitting layer materials. Alkaline developer and Yingu; the acidic etching solution of the bucket will decompose and destroy the organic light-emitting materials, making the daylight of the light-emitting diode impossible to define, or even impossible: The difficulty in the process. Two U.S. Patent Nos. 5701 and 0552037 proposed an inverted cone-shaped insulator: used in the structure of organic light-emitting diodes to solve this problem

^ A schematic diagram of the inverted cone-shaped insulator 2. The degree between the insulator 2 and the substrate i in Λ is Θ. The θ angle of this insulator 2 will determine the isolation effect produced in the subsequent coating process. n When making a display panel, it is desirable that the resolution-the number of pixels per unit-be as high as possible. The higher the resolution, the table

Page 4 46 B21 〇 2 ----- 5. Description of the invention (2) "The greater the number of day elements" and the smaller the isolated line width. The Θ angle of the inverted 隹 -shaped insulator in Fig. 1 described above will affect the quality of the daylight insulation. It is generally required that the 0 angle is less than 80 degrees. Although the structure of such an inverted cone-shaped insulator is proposed in the aforementioned U.S. Patent Nos. 5,701,055 and 5,520,037, the manufacturing method of such an inverted cone-shaped insulator is not disclosed in detail in these patents. The present invention provides a method for manufacturing such an inverted cone insulator. SUMMARY OF THE INVENTION A method for manufacturing an inverted cone-shaped insulator according to the present invention includes the following steps: coating a negative photoresist on a substrate and forming a negative photoresist layer having a thickness greater than 2 // m on the substrate; and then exposing In the manufacturing process, a photomask having a predetermined pattern and an exposure dose in a range of 15 to 120 mj / cm2 are used; the substrate is baked after exposure; and a subsequent development step is performed. In this case, 'the negative photoresist layer can be formed by spin coating' and the preferred thickness of this negative photoresist layer is in the range of 4 to 8 m. In addition, before the exposure process is performed, the negative photoresist layer may be pre-baked, and the conditions used may be about 90 to 180 seconds at a temperature of about 90 to 110T :. Post-exposure bake can be used for about 90 to 110. (: Temperature, and for a time of 50 to 90 seconds. The development step can use a tetraammonium hydroxide aqueous solution as a developer port and for a time of 60 to 120 seconds. In addition, after the development step, Applying ultraviolet light to the substrate makes the photoresist hardening and crosslinking more complete and obtains better stability.

Page 5 468210 Five description of the invention (3) a 'By using the manufacturing method of the present invention, it is possible to form an inverted cone-shaped insulator with the required 0 angles, so as to be used in a display panel of an organic light emitting diode, or other In the manufacturing process of integrated circuits, a good isolation effect is produced. Therefore, 'using the manufacturing method of the present invention, a detailed description of a trending embodiment having a high resolution can be manufactured. A preferred embodiment of the present invention will be described in detail below with reference to the drawings. First, the manufacturing principle of the inverted cone-shaped spacer of the present invention will be described with reference to FIG. Here, a negative photoresist such as a phenol resin (Novolak) series is used as a material for forming a spacer. Figure 2 is a schematic diagram of the principle of forming an inverted cone-shaped spacer by negative photoresist exposure. The y-axis of the coordinate graph of FIG. 2 shows the distance of the negative photoresist layer in the thickness direction, and the x-axis is the exposure intensity, the cross-linking of the negative photoresist, the degree of cross-linking, or the negative photoresist in subsequent development It can be seen that the smaller the 7 is, the closer the photoresistor to the substrate 1 is, and the weaker the exposure intensity, the smaller the degree of cross-linking, resulting in subsequent follow-up ::: body = dissolution. Conversely, the larger y is, the farther it is: the stronger the exposure intensity based on f. ', And the greater the degree of cross-linking, so that = the lower the rate of dissolution during development, resulting in photoresistance = solution u Exposure ί: ί The manufacturing of the inverted cone-shaped insulator is to use the negative light mentioned above. There is an exposure sword in the thickness direction due to the difference in the thickness of the photoresistor in the exposed temple.

46 821 〇 5. Description of the invention (4) Gradient characteristics of quantity difference. Here, the present invention studies the shape and size of the various insulators, and the shadow # 1 will be produced in the subsequent process. == A high-resolution OLED display panel with a good separation between the metal cathode and the organic light-emitting layer is obtained. [τ] The manufacturing method of the inverted cone-shaped spacer according to the present invention will be described below with reference to the flowchart of FIG. 3. First, as shown in step 31, a negative photoresist layer is formed by applying a negative resistance on a substrate by, for example, spin coating. In this case, before the negative photoresist is applied, the substrate can be cleaned and then dried with water. Then, the negative photoresist layer can be pre-baked. Next, as shown in step 32, an exposure process is performed in which a photomask having a predetermined pattern is used. After that, as shown in the step ′, post exposure baking (PEB) is performed. Next, as shown in step 34, a subsequent development step is performed in which an alkaline aqueous solution such as tetramethylammonium hydroxide (TMAH) can be used as a developer. Therefore, an inverted cone-shaped insulator as shown in Fig. 1 can be obtained. (Example 1) A negative photoresist ZPN 11 00 (sold by Zeon Corporation) was spin-coated on substrate 1 'to obtain a negative photoresist layer having a thickness of 4 # m. Next, the substrate 1 covered with the negative photoresist layer is pre-baked 'under the conditions of 90 °. 〇, 90 seconds. After that, a mask having a predetermined pattern (the width of the stripe pattern is ^ &quot; ^) is subjected to an exposure process using an exposure dose of 95 mJ / (: ιη2. Then, the negative photoresist layer is subjected to PEB, and The conditions are 丨 丨 〇.〇, 50 seconds. After that, the development process is performed using 2.38% TMAΤ as a developer and the time is 70 seconds, so an inverted cone with a width of 15 # m and a height of about 4 m is obtained. Shaped insulation 2. In this case

46 82 1 Ο V. Description of the invention (5) Under "Inverted cone-shaped insulator 2 and substrate"! The included θ angle is about 60 degrees. (Example 2) A negative photoresist ZPN 1100 (sold by Japan Zeon Corporation) was spin-coated on the substrate 1 to obtain a negative photoresist layer having a thickness of 5 v m. Next, the substrate 1 covered with the negative photoresist layer is prebaked 'using conditions of 90 t and 90 seconds. Thereafter, a photomask having a predetermined pattern (the width of the stripe pattern is 15 # m) is used for the exposure process, and the exposure dose is 65 / cm2. Next, PEB is performed on the negative light under the conditions of not: and 60 seconds. After that, a development process was performed, using 2.38% TMAΗ as a developer for 70 seconds, so that an inverted cone-shaped insulator 2 having a width of 15 μm and a height of about 5 was obtained. In this case, the angle Θ between the obtained inverted tapered spacer 2 and the substrate 1 is about 42 degrees. (Example 3) A negative photoresist ZPN 1 200 (sold by Japan Zeon Corporation) was spin-coated on a substrate j ^ and held to a negative photoresist layer having a thickness of 4V111. Next, the substrate 1 covered with the negative photoresist layer was prebaked under the conditions of 90t and 90 seconds. Then, a photomask having a predetermined pattern (the width of the stripe pattern is 10 μm) is subjected to an exposure process' using an exposure dose of 12 0, and then PEB is performed on the negative 2 layers under the use condition of n (rc, 6 () seconds. After that, the display is performed without using 2.38% TMAH as the developer, and the time is 70 seconds, so = to a width of 15 #! 11 and a height of about 4 to the inverted cone-shaped barrier 2 In this case &lt;: the angle Θ between the inverted cone-shaped insulator 2 and the substrate i is about 65 degrees. (Example 4) A negative photoresistor ZPN 120 (sold by Japan Zeon Corporation) is spin-coated on the substrate i 'to obtain a negative photoresist layer having a thickness of 2 μm. Next, pre-bake the substrate 1 covered with negative photoresist 46621 0. 5. Description of the invention (6) ------ layer, the use condition is 9 (TC, 90 seconds. After that, the pre &amp; pattern (long The width of the stripe pattern is 3 μm), and the exposure process is performed using an exposure dose of 80 mj / cm2. Then, PEB is performed for the negative light =, and the use condition is U (rc, 6 () seconds. After that, The development was carried out using 2,38% TMAH as a developer for 70 seconds, so that an inverted cone-shaped insulator 2 having a width of 15 / m and a height of about 2 m was obtained. In this case, The angle between the inverted cone-shaped insulator 2 and the substrate i was about 70 degrees. (Example 5) A negative photoresist AZ TFP —N — Exp. 354 (sold by Clariant) was spin-coated on the substrate 1 'To obtain a negative photoresist layer having a thickness of 3 β m. Next, the substrate 1 covered with the negative photoresist layer is prebaked under conditions of use of 丨 丨 art and 丨 80 seconds. After that, a pattern having a predetermined pattern ( The stripe pattern has a width of 10 mm and a photomask is used for the exposure process, using an exposure dose of 17 mJ / cn] 2. Next, PEB is performed on the negative photoresist layer under the use condition of 1 1 0 〇c, 90 seconds. After that, the “development process” was performed using 2.38% TMAH as the developer and the time was 60 seconds. Thus, an inverted cone-shaped insulator having a width of 10 mm and a height of about 3 mm was obtained. 2. In this case, 'the angle between 0 obtained by the inverted cone-shaped insulator 2 and the substrate 1 is about 65 degrees. (Embodiment 6)' The negative photoresistor AZ TFP-N-Exp.354 (sold by Clariant) Spin-coated on the substrate 1 'to obtain a negative photoresist layer with a thickness of 3 # m.' Next, the substrate 1 covered with the negative photoresist layer was pre-baked under the use conditions of 1 1 0. 0, 180 seconds Afterwards, 'the exposure process is performed using a mask having a predetermined pattern (the width of the stripe pattern is # 0 # m)' using an exposure dose of 30 niJ / Cm2.

Page 9 46 82 1 〇 5. Description of the invention (7) Next, PEB is performed on the negative photoresist layer under the conditions of 100 ×: 90 seconds. After that, a developing process 'using 2.38% TMAΗ as a developer for 60 seconds' was performed to obtain an inverted cone-shaped insulator 2 having a width of 10 A m and a height of about 3 / z m. In this case, the zero angle between the obtained inverted tapered spacer 2 and the substrate 1 is about 70 degrees. (Example 7) A negative photoresist AZ TFP-N-Exp. 354 (sold by Clariant) was spin-coated on the substrate 1 to obtain a negative photoresist layer having a thickness of 3 # m. Next, the substrate 1 covered with the negative photoresist layer is pre-baked under the conditions of using it for 8 seconds. Afterwards, a photomask with a predetermined pattern (the width of the stripe pattern is 10 μm) is used for the exposure process, and the exposure dose is 50 mJ. Next, PEB was performed on the negative photoresist layer under the conditions of 90 ° C and 90 seconds. After that, a developing process was performed using 2.38% TMAH as a developer for 60 seconds, so that an inverted cone-shaped insulator 2 having a width of 10 m and a height of about 3 m was provided. In this case, the angle between the inverted cone-shaped insulator 2 and the substrate 0 is about 57 degrees. As can be seen from the above-mentioned embodiments of the present invention, the method for producing the inverted tapered insulator of the present invention is as follows. First, the substrate is washed, dried, and dried. Then, a negative photoresist is coated on the substrate by, for example, spin coating, and a negative photoresist layer having a thickness greater than 2 // m is formed on the substrate. The thickness ranges from 4 to 8 m. Next, the substrate covered with the negative photoresist layer is prebaked under conditions of 90 to 110 seconds and 90 to 180 seconds. Next, an exposure process is performed using a mask having a predetermined pattern, in which an exposure dose in a range of 15 to 120 mJ / cW can be used. After that, the substrate

468210

5. Description of the invention (8) PEB uses a temperature of about 90 to 110 ° C and performs a time of 50 to 90 seconds. Next, a development process is performed, using an alkaline aqueous solution such as WTMAH as a developer, and the development time is in the range of 60 to 120 seconds. An inverted cone-shaped insulator as shown in Fig. 1 was obtained. After developing and removing water, UV light irradiation can be applied to make the photoresist hardening and crosslinking more complete and obtain better stability. The foregoing is only for the convenience of describing the preferred embodiment of the present invention, and is not intended to limit the present invention to the preferred embodiment in a narrow sense. Any changes according to the present invention are within the scope of the present invention. For example, in addition to the two-shaped insulation of the present invention, in addition to being used in the manufacturing process of LEDs, it can also be used in the isolation technology of integrable circuits.

46821 Ο

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Claims (1)

46 82 1 〇 6. Scope of patent application `` ------- -------- A method for manufacturing an inverted cone-shaped insulator, including the following steps: / Coating a negative photoresist on On the substrate, a negative photoresist layer at 2em is formed on the substrate; then the exposure process is performed on a human ruler, using a mask with a predetermined pattern, and the exposure dose is in the range of 1 20 m J / cm2; The substrate is baked after exposure; and subsequent development steps are performed. 2. The manufacturing method according to item 1 of the scope of patent application, wherein the negative photoresist layer is formed by spin coating. 3. The manufacturing method according to item 1 of the scope of patent application, wherein the thickness of the negative photoresist layer is in the range of 4 to 8. '4. The manufacturing method as described in item 1 of the claimed patent scope, further comprising the following steps: pre-baking the negative photoresist layer before the exposure process β 5. as described in item 4 of the scope of applied patents A manufacturing method, wherein when the negative photoresist layer is pre-baked, a temperature of about 90 to .110 ° C is used, and a time of about 90 to 180 seconds is performed. 6. The manufacturing method described in item 1 of the scope of patent application, wherein the exposure Page 13 46 821 〇 6. Scope of patent application The post-baking system uses a temperature of about 90 to 110 ° C and a time of 50 to 90 seconds. 7. The manufacturing method according to item 1 of the scope of patent application, wherein the developing step uses a tetramethylammonium hydroxide aqueous solution as a developer. 8. The manufacturing method according to item 1 of the scope of patent application, wherein the developing step is performed for a period of 60 to 120 seconds. 9. The manufacturing method described in item 1 of the scope of patent application, further comprising the following steps: After the developing step, the substrate is irradiated with ultraviolet light to make photoresist hardening and crosslinking more complete. Page 14