鲤濟部中央標準局員工消費合作社印裝 462998 A7 ______B7 _五、發明説明（1 ) 本發吗係有關於將半導體單結晶之品質，特別是氧 氣引起g 1，^；(OSF)等之結晶缺陷安定化之捷可拉斯 基法（CZ法）之單結晶拉引裝置。 以往，對於藉由將矽等半導體單結晶同心圓地包圍 y 的整流筒配置在坩堝上之捷可拉斯基法的單結晶拉引裝 置’隨著高溫爐内之爐内構件之熱膨脹或構成坩堝之石 英玻璃之軟化以及這些構件之熱變形，必需正確地設定 拉引爐内構件和熔融液表面之相對位置，特別是熔融液 表面與整流筒下端之間隔，為了氧氣及結晶缺陷之安定 化’以各種方法保持一定，作技術之改良。例如為了將 單結晶中氧氣濃度壓低，降低其變動而減少氧氣引起積 層缺陷（OSF)等結晶缺陷為目的，使用設置在絕熱性圓筒 等之爐内構件之熔融液位置測定裝置以液面接觸法測定 爐内構件下端與熔融液表面之距離》所謂的Seed-dip法 (請參考,特開平7-33〇484號公報）或者將雷射光入射至熔 融液表面’藉檢知反射光控制坩堝之位置之所謂‘‘雷射檢 測法”。（請參考特開平6-92784號公報） 然而，以往的例子，上述兩種方法都能測定單結晶 拉引裝置内之熔融液表面之絕對位置，例如離底部幾 mm，但是要直接測定和整流筒之相對位置，赤即熔融液 表面和整流筒下端之間隔，則困難。其理由為爐内構件， 例造成整流筒之絕對位置稍微變動的 話，熔融液表面和整流筒下端之間隔就跟著變動，亦即 只要爐内構件之狀況稍微變化，就會有實際的熔融液表 4 本紙張尺度適用中國國家標準（CMS ) A4規格（2K)X297公釐） (請先閲讀背面之注意事項再填寫本頁) .裝. 訂 46299 8 經濟部中央揉準局貝工消費合作社印聚 A7 B7 五、發明説明（2 ) 面和整流筒下端之間隔無法計測之問題點。 本發明有鑑於上述之問題點，為一種將矽等的半導 體單結晶同心包圍的整流筒配置於坩堝上之捷可拉斯基 法之單結晶拉引裝置，其改良成可直接測定熔融液表面 和整流筒下端之間隔，並藉由將此間隔控制修正在一定 之值而以提供一種能使半導體單結晶之品質，特別是氧 氣引起積層缺陷（OSF)等結晶缺陷安定化之裝置為其目 的。 為了逹成上述之目的’本發明乃為一種將單結晶同 以包圍之整流筒配置在坩堝上，從坩堝中之熔融液拉引 成長單結晶之單結晶拉引裝置，其乃依照藉由設置在爐 内觀察用之窺視窗上之望遠鏡之視野内所佈置表示出之 線網刻度測出之整流筒下端部和在熔融液表面之該整流 筒反射線上端部之刻度間距離與前述線網刻度之水平基 準線和整流筒下端之一致位置以及該水平基準線與炼融 液表面之整流筒反射線上端部之一致位置間之望遠鏡之 上下方向移動距離之對應關係，讀取該望遠鏡之線網的 刻度距離之任意測定值，以檢出熔融液表面和整流筒下 端的間隔為其特徵。 此外，該望遠鏡之上下方向移動距離乃藉由附設在 望遠鏡移動架台之移動距離微測定器讀取之。而且此望 遠鏡可取代設置在室肩部單結晶直徑測定用測徑儀。 此外，將該望遠鏡之線網的刻度距離與隨著使單結 晶成長時之熔融液面位置變動之單結晶濃度之變動為最 本紙張尺度適用中國國家標準（CNS ) A4規格（210X2.97公釐） ------1—κ 裝— 一 ' * . . · (請先閱讀背面之注意事項再填寫本頁) 訂 2 鲁86i〇7〇i8號說明書修正頁 A7 B7 修正曰势Printed by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Lijing 462998 A7 ______B7 _V. Description of the invention (1) Does the present invention relate to the quality of single crystals of semiconductors, especially oxygen caused by crystals such as g 1, ^; Single crystal pulling device of the Jeclasky method (CZ method) for defect stabilization. In the past, the single crystal pulling device of the Kelansky method, in which a rectifier tube concentrically surrounding y with a semiconductor single crystal such as silicon was arranged on a crucible, was' expanded or constituted by the heat of the furnace internal components in a high-temperature furnace. The softening of the quartz glass of the crucible and the thermal deformation of these components must correctly set the relative position of the internal components of the furnace and the surface of the molten liquid, especially the distance between the surface of the molten liquid and the lower end of the rectifying cylinder, in order to stabilize oxygen and crystal defects. 'Keep it constant by various methods and make improvements in technology. For example, in order to reduce the concentration of oxygen in a single crystal, reduce its fluctuations, and reduce crystal defects such as laminated defects (OSF) caused by oxygen, use a molten-liquid position measuring device installed in a furnace inner member such as a thermally insulated cylinder to contact the liquid surface. Method for measuring the distance between the lower end of the furnace inner part and the surface of the molten liquid "The so-called Seed-dip method (please refer to Japanese Patent Application Laid-Open No. 7-33〇484) or incident laser light on the molten surface to control the crucible by detecting the reflected light The so-called "laser detection method" of the position. (Please refer to Japanese Patent Application Laid-Open No. 6-92784.) However, in the previous examples, the above two methods can measure the absolute position of the surface of the molten liquid in the single crystal pulling device. For example, it is a few millimeters from the bottom, but it is difficult to directly measure the relative position with the straightening cylinder, that is, the distance between the surface of the molten liquid and the lower end of the straightening cylinder. The reason is the internal components of the furnace. For example, if the absolute position of the straightening cylinder is slightly changed, The interval between the surface of the melt and the lower end of the rectifying cylinder changes accordingly, that is, as long as the condition of the furnace internal components changes slightly, there will be an actual melt. Standards apply to Chinese National Standard (CMS) A4 (2K) X297 mm) (Please read the precautions on the back before filling out this page). Packing. Order 46299 8 Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, India Poly A7 B7 V. Description of the invention (2) The problem that the distance between the surface and the lower end of the rectifier can not be measured. The present invention is in view of the above problems, and is a Jieke in which a rectifier that is concentrically surrounded by a semiconductor single crystal such as silicon is arranged on a crucible. The single crystal pulling device of the Laski method is improved to directly measure the distance between the surface of the molten liquid and the lower end of the rectifying cylinder, and by controlling and correcting this interval to a certain value, to provide a quality capable of semiconductor single crystal In particular, a device for stabilizing crystalline defects such as layered defects (OSF) caused by oxygen is used for its purpose. In order to achieve the above-mentioned purpose, the present invention is a kind of single crystal which is arranged on a crucible surrounded by a rectifying cylinder, and from the crucible The single crystal pulling device which pulls the molten liquid into a single crystal is shown in accordance with the arrangement of the field of view of a telescope arranged on a viewing window for observation in the furnace. The distance between the lower end of the rectifier cylinder and the end of the rectifier cylinder reflection line on the melt surface measured by the line network scale is consistent with the horizontal reference line of the aforementioned line network scale and the lower end of the rectifier barrel, and the horizontal reference line and the Correspondence between the distance of the telescope moving up and down in the same position on the reflection line of the rectifier tube on the melt surface, read any measured value of the scale distance of the telescope's wire network to detect the melt surface and the lower end of the rectifier tube The distance between them is characteristic. In addition, the distance of the telescope in the up and down direction is read by a micrometer for the movement distance attached to the telescope's mobile stand. And this telescope can replace the diameter of the single crystal diameter measured on the shoulder of the chamber. In addition, the scale distance of the wire net of the telescope and the change in the concentration of the single crystal with the change in the position of the molten liquid surface when the single crystal grows are the most paper size applicable to the Chinese National Standard (CNS) A4 specification (210X2. 97mm) ------ 1—κ 装 — 一 '*.. · (Please read the notes on the back before filling this page) Order 2 Lu 86i〇7〇i Manual No. 8 amendment page A7 B7 correction
項讀委員s：示 衣.t修^缝是否變更原實質^» 經濟部中央標準局員工消費合作社印裝 五、發明説明（3 ) 小之一定間隔一致’介由坩堝昇降裝置上下移動以控制 嫁融液表面和整流筒下端之間隔。 依如本發明之單結晶拉引裝置’藉由裝設在爐内觀 察用之窺視窗之望遠鏡直接觀察爐内，並藉由將整流筒 下端與在熔融液表面之反射像之上端部之距離在望遠鏡 之視野内重疊，而由線網刻度直接測定。此外，使在望 遠鏡之視野内重疊表示之網線之水平基準線與最初之整 流筒下端一致’然後將望遠鏡向下方移動並藉由設置在 望遠鏡之移動架台的移動距離微測定器讀取水平基準線 與邊反射線之上端部一致為上之移動距離，故可直接測 定該整流筒下端炼融液表面之間隔。 以下參考圖面說明本發明之實施形態。 圖式之簡單說明： 第1圖為顯示本發明之實施形態之單結晶拉引裝置 之概略圖； 第2圖為本發明之單結晶拉引裝置之望遠鏡之視野 之狀態圖； 第3圖為顯示本發明之單結晶妆引裝置之望遠鏡之 刻度讀取值與坩堝位置之關係之圖。 符號說明： 1〜單結晶拉引裝置 10〜線網刻度 10A〜水平基準線 6 本紙張尺度適用中國圃家標準（CNS ) A4規格（2丨0X297公釐） ί請先閲讀背面之注意事項再^'本頁) -s τItem reading committee s: show clothes. T repair ^ whether the seam changes the original essence ^ »Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (3) Small and uniform intervals are controlled by the crucible lifting device to move up and down to control The distance between the surface of the grafting solution and the lower end of the rectifying cylinder. The single crystal pulling device according to the present invention 'directly observes the inside of the furnace through a telescope installed in a viewing window for observation in the furnace, and the distance between the lower end of the rectifying cylinder and the end above the reflection image on the surface of the molten liquid It overlaps in the field of view of the telescope, and is directly measured by the line grid scale. In addition, make the horizontal reference line of the network cable superimposed in the field of view of the telescope consistent with the lower end of the original rectifier tube, and then move the telescope downward and read the horizontal reference by the moving distance micrometer installed on the mobile stand of the telescope. The upper end of the line is consistent with the upper reflection of the side reflection line, so the distance between the surfaces of the melting liquid at the lower end of the rectifier can be directly measured. Hereinafter, embodiments of the present invention will be described with reference to the drawings. Brief description of the drawings: FIG. 1 is a schematic diagram showing a single crystal pulling device of an embodiment of the present invention; FIG. 2 is a state diagram of a field of view of a telescope of the single crystal pulling device of the present invention; FIG. 3 is A graph showing the relationship between the scale reading value of the telescope and the position of the crucible of the single crystal makeup attracting device of the present invention. Explanation of symbols: 1 ~ Single crystal pulling device 10 ~ Wire mesh scale 10A ~ Horizontal reference line 6 This paper size is applicable to China Garden Standard (CNS) A4 specification (2 丨 0X297mm) ί Please read the precautions on the back first ^ 'This page) -s τ
Λ6299 8 ” 1 1 _ 1丨.1 II II Λ6299 8 ” 1 1 _ 1丨.1 II II %JsJ m^\ —.------.----裝-- (諳先聞讀背面之注意事項再f本頁} 經濟部中央標準局負工消費合作社印製 五、發明説明（3-1 ) 11〜望遠鏡 2〜室 3〜坩堝 4〜下車由 5〜加熱器 6〜保溫筒 7〜整流筒 7A〜下端部 7B~反射線 8〜窺視窗 9〜熔融液 希示號1為使例如半導體單結晶之品質；特別是氧氣 引起積層缺陷（OSF)等結晶缺陷安定化為主之捷可拉斯 基法之單結晶拉引裝置。該單結晶拉引裝置丨如第工圖 所示，在室2之中央部有一石墨補強石英坩堝3裝設在 可自由昇降及旋轉之下軸4之上，在該坩堝3之 設 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇χ297公釐） 經濟部中央標準局®:工消费合作社印製Λ6299 8 ”1 1 _ 1 丨 .1 II II Λ6299 8” 1 1 _ 1 丨 .1 II II% JsJ m ^ \ —.------.---- install-(谙 先 读读Note on the back page again f}} Printed by the Central Bureau of Standards of the Ministry of Economic Affairs and Consumer Cooperatives V. Description of the Invention (3-1) 11 ~ Telescope 2 ~ Chamber 3 ~ Crucible 4 ~ Get off by 5 ~ Heater 6 ~ Thermal insulation tube 7 ~ rectifier 7A ~ lower end 7B ~ reflection line 8 ~ viewing window 9 ~ melt liquid No. 1 is used to stabilize the quality of single crystal semiconductors, for example, and to stabilize crystal defects such as laminated defects (OSF) caused by oxygen. The single crystal pulling device of the Jeclaski method. As shown in the first drawing, a graphite-reinforced quartz crucible 3 is installed at the center of the chamber 2 and can be lowered and rotated freely. 4 above, the paper size of the crucible 3 is set to the Chinese National Standard (CNS) A4 specification (21 × 297 mm). Printed by the Central Standards Bureau of the Ministry of Economic Affairs®: Printed by the Industrial Cooperative.
Zt6299 B A7 ______B7 五、發明説明（4 ) 置有控制坩禍内嫁融液溫度之加熱器5。在室2與加熱 器5之間配置有保溫筒6。在該保溫筒6之上側支持著一 整流筒7，其為對著坩堝3之上部開口向下方漸次縮小 之筒狀且具有輻射熱遮蔽功能並成同心地包圍著被拉引 上之單結晶。而且在室2之肩部設有室内部觀察用之窥 視窗8。此坩堝3之内部充填有矽等半導體單結晶原料， 嫁解後形成溶融液9。此外’在窺視窗8上不使用生長 之單結晶之直#測定用之測徑儀，而將在視野内裝設表 示有網線刻度10之望遠鏡11向著整流筒7和坩堝3之周 邊裝置。該望遠鏡Π之光轴在水平方向可自由滑動而不 會在室2中心方向之垂直方向傾倒或偏向。而且，該望 遠鏡Π在上下方向之光軸並進移動距離乃藉由裝設在望 遠鏡移動架台之移動距離微測定器（圖未示）讀取之。 此裝設在室2内之觀察用之窺視窗8之望遠鏡11介 著安置表示在其視野内之網線刻度1 〇可直接測定整流筒 7之下端部7Α與在熔融液表面之該整流筒7之反射線7Β 之上端部之刻度間距離（請參考第2圖此外，在該網線 刻度10之水平基準線10Α與整流筒7之下端部7Α之一 致位置及該水平基準線10Α與熔融液表面之整流筒7之 反射線7Β之上端部之一致位置間之望遠鏡u之上下方 向之光軸並進移動距離藉由移動距離微測定器作精密之 計測。此計測值和介由該網線刻度1 〇之整流筒7之下端 部7Α與溶融液表面之該整流筒7之反射線7Β之上端部 之刻度間距離之對應的望遠鏡讀取值對坩堝位置之線性 7 本紙張適用中國國家標準（CNS )八4祕（21〇χ29?公釐J ' (請先閱讀背面之注$項再填寫本頁) 裝_ 訂 經濟部中央標準局貝工消費合作杜印衆Zt6299 B A7 ______B7 V. Description of the invention (4) A heater 5 is provided to control the temperature of the melting solution in the crucible. Between the chamber 2 and the heater 5, a thermal insulation cylinder 6 is arranged. A rectifying cylinder 7 is supported on the upper side of the heat-preserving cylinder 6, which is a cylindrical shape that gradually decreases downwardly toward the upper opening of the crucible 3 and has a radiant heat shielding function and concentrically surrounds the single crystal pulled up. A viewing window 8 for observing the interior of the room is provided on the shoulder of the room 2. The inside of the crucible 3 is filled with a semiconductor single crystal raw material such as silicon, and a melt solution 9 is formed after dissolution. In addition, a caliper for measuring single crystals of straight # is not used for the viewing window 8. Instead, a telescope 11 showing a network scale 10 is installed in the field of vision toward the periphery of the rectifying cylinder 7 and crucible 3. The optical axis of the telescope Π can slide freely in the horizontal direction without falling or deviating in the vertical direction in the center direction of the chamber 2. In addition, the distance of the optical axis moving in the up and down direction of the telescope Π is read by a moving distance micrometer (not shown) installed on the telescope moving stand. The telescope 11 of the observation window 8 installed in the chamber 2 is arranged with a network line scale 1 indicated in its field of view. The bottom end 7A of the rectifying cylinder 7 and the rectifying cylinder on the surface of the molten liquid can be directly measured. The distance between the scales of the upper end of the reflection line 7B of 7 (please refer to FIG. 2) In addition, the horizontal reference line 10A of the network line scale 10 and the lower end 7A of the straightening cylinder 7 are in the same position, and the horizontal reference line 10A and the melting The moving distance of the optical axis of the telescope u in the upper and lower direction between the consistent positions of the reflection lines 7B at the upper end of the rectifying cylinder 7 on the liquid surface is accurately measured by a moving distance micrometer. This measurement value is passed through the network cable. The telescope reading corresponding to the distance between the scale 7 and the end 7A below the rectifying cylinder 7 of the scale 10 and the upper end of the reflection line 7B of the rectifying cylinder 7 on the surface of the molten liquid is linear to the position of the crucible. 7 This paper applies Chinese national standards (CNS) Eighty-four Secrets (21〇χ29? Mm J '(please read the note on the back before filling this page)
46299 B A7 B7____ 五、發明説明（5 ) 關係（參考第3圖）讀取該望遠鏡π之網線刻度10之刻度 間距離之任意測定值，正確地檢測出熔融液表面與整流 筒下端之間隔。 此外，使望遠鏡11之網線刻度10之該刻度間距離 與單結晶成長時之熔融液面位置變動所伴隨之單結晶氧 氣濃度之變動為最小之所特定之間隔一致來介由裝設在 下軸4之昇降裝置（圖未示）將坩堝3在上下方向移動微調 整控制熔融液表面與整流筒7下端之間隔。 接著，說明本發明裝置使用之一例》在成長單結晶 時’藉由裝設在室2(爐内）觀察用之窺視窗8之望遠鏡u 直接觀察爐内’藉由在望遠鏡11之視野内重疊表示之網 線刻度10直接測定整流筒7之下端部7A與熔融液表面 之反射像7B之上端部之距離。從此測定值藉由望遠鏡之 讀取值對坩堝位置之線性關係（參考第3圖）檢測出整流 筒7之下端與熔融液表面之間隔。此時，使望遠鏡^之 視野内重疊表示之網線刻度10之水平基準線10Α先與整 流筒7之下端部7Α —致，然後使望遠鏡11向下方並進 移動使水平基準線10Α與該反射像7Β之上端部一致為止 之移動距離藉由設置在望遠鏡之移動架台上之移動距離 微測定器讀取之而能直接測定整流筒7和熔融液表面之 間隔。此外，使望遠鏡11之線網刻度10之刻度間距與 單結晶成長時熔融液面位置變動伴隨之單結晶濃度之變 動為最小值之一定間隔值（第3圖之設定甜禍位置）—致 介由昇降裝置將坩堝3在上下方向移動以修正控制炼融 本紙張尺度適用中關家標準（CNS )八4織（21GX297公釐) — --- (請先閲讀背面之注意事項再填寫本頁)46299 B A7 B7____ V. Description of the invention (5) Relationship (refer to Figure 3) Read any measured value of the distance between the scales of the network line scale 10 of the telescope π to correctly detect the distance between the surface of the molten liquid and the lower end of the rectifying cylinder . In addition, the distance between the scales of the network line scale 10 of the telescope 11 and the specific interval at which the change in the concentration of the single crystal oxygen concentration accompanying the change in the position of the molten liquid surface during the growth of the single crystal is minimized are consistent with each other through the lower axis. The lifting device (not shown) of 4 moves the crucible 3 in the vertical direction to finely adjust and control the distance between the surface of the molten liquid and the lower end of the rectifying cylinder 7. Next, an example of the use of the device of the present invention will be described. "When growing a single crystal," directly observe the furnace through a telescope u with a viewing window 8 installed in the observation chamber 2 (in the furnace), "it is superimposed in the field of view of the telescope 11 The displayed network line scale 10 directly measures the distance between the lower end 7A of the rectifying cylinder 7 and the upper end of the reflection image 7B on the surface of the molten liquid. From this measured value, the distance between the lower end of the rectifying cylinder 7 and the surface of the molten liquid is detected by the linear relationship between the reading of the telescope and the position of the crucible (refer to Fig. 3). At this time, the horizontal reference line 10A of the network scale 10 superimposed in the field of view of the telescope ^ is first aligned with the lower end 7A of the commutator 7, and then the telescope 11 is moved downward to make the horizontal reference line 10A and the reflection image The moving distance until the upper end of 7B is consistent can be directly measured by the distance measuring device installed on the moving stage of the telescope to measure the distance between the rectifying cylinder 7 and the surface of the molten liquid. In addition, the interval between the scale interval of the line network scale 10 of the telescope 11 and the change in the concentration of the single crystal accompanying the change in the position of the molten liquid surface during the growth of the single crystal is a certain interval value (setting the sweet spot in Figure 3) —Cause The crucible 3 is moved up and down by a lifting device to modify and control the paper size. Zhongguanjia Standard (CNS) 8 4 weaving (21GX297 mm) — --- (Please read the precautions on the back before filling this page )
46299 8 A7 B7 經濟部中央標準局員工消費合作社印策 五、發明説明（6 ) 液表面與整流筒7之間隔。 實施例 實際之單結晶生長時，因爐内品劣化等所造成之熔 融液表面位置之變動約2mni，依照以往之單結晶生長條 件熔液表面位置之上下波動為土 1 mm，約會產生± 0.45 X 1017at〇ms/cc之氧氣濃度之變動，而因熔融液表面位置 之變動之氧氣濃度變動約為± 0.45 X l〇17atoms/cc。由 於本實施例之熔融液表面位置測定之變動約± 〇.5mm， 因而將熔融液表面與整流筒7之下端之間隔的變動偏差 (溶融液表面之位置控制）修正在土 〇,5mm以内生長單結 晶時氧氣濃度之變動約± 0.58 X 1017at〇ms/cc。而以以 往之方式將其他變動因素包含在内約± 0.80 X 1017atoms/cc之變動幅度比起來可大幅降低氧氣濃度在 規格外。 本發明乃如上之構成’特別是可直接測定熔融液表 面和整流筒下端之間隔，將此間隔控制修正在一定值能 安定半導體單結晶之品質’特別是氧氣引起積層缺陷 (OSF)等結晶缺陷，能降低因爐内品劣化等之熔融液表面 位置之變動所伴隨之氡氣濃度在規格外。 i· -I. i 1^1 m - -- I (諳先閱讀背面之注意事項再填寫本頁) 訂 本紙張尺度適用中國囤家標準（CNS ) A4規格（2丨〇父297公釐）46299 8 A7 B7 Imprint by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (6) The distance between the liquid surface and the rectifier cylinder 7. In the actual single crystal growth of the example, the surface position of the molten liquid changed due to deterioration of the furnace product, etc., about 2mni. According to the previous single crystal growth conditions, the surface position of the molten liquid fluctuated up to 1 mm, and the date was ± 0.45. The change in oxygen concentration of X 1017 at 0 ms / cc, and the change in oxygen concentration due to the change in surface position of the melt is about ± 0.45 X 10 17 atoms / cc. Since the variation in the measurement of the position of the surface of the molten liquid in this embodiment is about ± 0.5 mm, the variation in the variation in the interval between the surface of the molten liquid and the lower end of the rectifying cylinder 7 (position control of the surface of the molten liquid) is corrected to grow within 0.5 mm of the soil. The change in oxygen concentration during single crystallization is about ± 0.58 X 1017 at 0 ms / cc. Including other fluctuation factors in the past way, the fluctuation range of about ± 0.80 X 1017 atoms / cc can greatly reduce the oxygen concentration outside the specification. The present invention is structured as above. In particular, it is possible to directly measure the distance between the surface of the molten liquid and the lower end of the rectifier cylinder, and control and correct the interval to a certain value to stabilize the quality of the semiconductor single crystal. , Can reduce the radon concentration accompanying the fluctuation of the surface position of the melt due to the deterioration of the product in the furnace, etc., outside the specification. i · -I. i 1 ^ 1 m--I (谙 Please read the precautions on the back before filling in this page) Revision This paper size is applicable to China Store Standard (CNS) A4 (2 丨 〇 Parent 297 mm)