CN103882512B - A kind of manufacturing technique method controlling oxygen alms giver's monocrystalline - Google Patents
A kind of manufacturing technique method controlling oxygen alms giver's monocrystalline Download PDFInfo
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Abstract
The present invention relates to a kind of manufacturing technique method controlling oxygen alms giver's monocrystalline, including step of craning one, shouldering step, turn shoulder step, isometrical step, finishing steps and control oxygen step, it is characterized in that: above-mentioned in steps in, the liquid level in crucible (1) in single crystal growing furnace body remains at heavy pot position, and the distance that described heavy pot position is the liquid level in crucible (1) and flow guiding screen (2) bottom is 15～25mm。The invention has the beneficial effects as follows: by the rotating speed of the control of seed crystal rotating speed in production stage, crucible is controlled, the improvement of the control of the crucible rate of climb and the control of inert gas flow and single crystal growing furnace internal insulation layer and flow guiding screen heat-insulation layer, minimizing monocrystalline is in oxygen alms giver and produces the time in space, reduces the purpose of oxygen alms giver。
Description
Technical field
The present invention relates to monocrystalline technical field of producing, especially a kind of manufacturing technique method controlling oxygen alms giver's monocrystalline。
Background technology
Change recently as Market Situation, product quality is required extremely strict, in monocrystalline production process, oxygen alms giver's monocrystalline is the important component part causing defective monocrystalline, oxygen alms giver's monocrystalline ratio accounts for and produces the 30% of monocrystalline, cause vast scale oxygen alms giver's monocrystalline can not meet the demand of Market Situation, constantly decline in monocrystalline profit ratio of sales。A large amount of oxygen alms giver's monocrystalline directly contribute production cost to be increased, and causes serious financial consequences to company, therefore effectively reduces oxygen alms giver's monocrystalline, improves constantly monocrystalline quality, reduce production cost extremely urgent。
Summary of the invention
It is an object of the invention to provide a kind of manufacturing technique method reducing control oxygen alms giver's monocrystalline that produce oxygen alms giver's monocrystalline in production, that improve monocrystalline quality。
In order to complete above-mentioned purpose, the technical solution used in the present invention is:
A kind of manufacturing technique method controlling oxygen alms giver's monocrystalline, including step of craning one, shouldering step, turn shoulder step, isometrical step, finishing steps and control oxygen step, above-mentioned in steps in, the liquid level in dry pot in single crystal growing furnace body remains at heavy pot position, described heavy pot position be liquid level in dry pot with flow guiding screen bottom distance be 15～25mm；
Described cranes one in step, and the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible is 7～9r/min, and the speed that crucible rises is 0mm/min；
In described shouldering step, the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible is 7～9r/min, and the speed that crucible rises is 0.05～0.15mm/min；
Described turns in shoulder step, and the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible is 7～9r/min, and the speed that crucible rises is 0.15～0.2mm/min；
In described isometrical step, the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible is 7～9r/min, and the speed that crucible rises is 0.19～0.25mm/min；
In described finishing steps, the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible is 7～9r/min, and the speed that crucible rises is 0.15～0.05mm/min。
Described control oxygen step is control the inert gas flow in single crystal growing furnace body, cranes one in step described, and the inert gas flow in single crystal growing furnace body is 30～40L/min；
In described shouldering step, the inert gas flow in single crystal growing furnace body is 30～40L/min；
Turning in shoulder step described, the inert gas flow in single crystal growing furnace body is 30～40L/min；
In described isometrical step, the inert gas flow in single crystal growing furnace body at the uniform velocity reduces from 40L/min to 20L/min；
In described finishing steps, the inert gas flow in single crystal growing furnace body is 20L/min。
Described cranes one in step, and the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible is 8r/min, and the speed that crucible rises is 0mm/min；
In described shouldering step, the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible is 8r/min, and the speed that crucible rises at the uniform velocity increasing to 0.15mm/min from 0.05mm/min；
Described turns in shoulder step, and the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible is 8r/min, and the speed that crucible rises is that 0.15mm/min at the uniform velocity increases to 0.195mm/min；
In described isometrical step, the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible is 8r/min, and the speed that crucible rises is that 0.195mm/min at the uniform velocity increases to 0.22mm/min；
In described finishing steps, the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible is 8r/min, and the speed that crucible rises is 0.1mm/min。
Craning one in step described, the inert gas flow in single crystal growing furnace body is 30L/min；
In described shouldering step, the inert gas flow in single crystal growing furnace body is 30L/min；
Turning in shoulder step described, the inert gas flow in single crystal growing furnace body is 30L/min；
In described isometrical step, the inert gas flow in single crystal growing furnace body at the uniform velocity reduces to 20L/min from 30L/min；
In described finishing steps, the inert gas flow in single crystal growing furnace body is 20L/min。
Also include the improvement of single crystal growing furnace internal insulation layer and flow guiding screen heat-insulation layer, described single crystal growing furnace internal insulation layer is from the heat preservation zone, top that the upper oral part of crucible is divided into upper and lower two parts to be connected and heat preservation zone, bottom, the sidewall of described heat-insulation layer generally upper-thin-lower-thick shape, the thickness of heat preservation zone, bottom is at least not less than 80mm, and the thickness of heat preservation zone, top is not more than 58mm；
The improvement of described flow guiding screen heat-insulation layer includes the improvement of heat-insulation layer height and the improvement of heat-insulation layer position, heat-insulation layer height reduction within flow guiding screen is to not higher than 167mm, heat-insulation layer within flow guiding screen is arranged on the bottom of flow guiding screen, is provided with cavity at the top within flow guiding screen。
The invention has the beneficial effects as follows: by the rotating speed of the control of seed crystal rotating speed in production stage, crucible is controlled, the improvement of the control of the crucible rate of climb and the control of inert gas flow and single crystal growing furnace internal insulation layer and flow guiding screen heat-insulation layer, minimizing monocrystalline is in oxygen alms giver and produces the time in space, reduces the purpose of oxygen alms giver。
Accompanying drawing explanation
Fig. 1 is the structural representation of single crystal growing furnace in the present invention。
Fig. 2 is the structural representation of single crystal growing furnace in prior art。
In figure, 1, crucible, 2, flow guiding screen, 3, heat preservation zone, top, 4, heat preservation zone, bottom。
Detailed description of the invention
The present invention is a kind of manufacturing technique method controlling oxygen alms giver's monocrystalline, by the rotating speed of the control of seed crystal rotating speed in production stage, crucible is controlled, the improvement of the control of the crucible rate of climb and the control of inert gas flow and single crystal growing furnace internal insulation layer and flow guiding screen heat-insulation layer, minimizing monocrystalline is in oxygen alms giver and produces the time in space, reduces the purpose of oxygen alms giver。
Below in conjunction with accompanying drawing, the present invention will be further described。
Specific embodiment 1, as shown in Figure 1, a kind of manufacturing technique method controlling oxygen alms giver's monocrystalline, including step of craning one, shouldering step, turn shoulder step, isometrical step, finishing steps and control oxygen step, above-mentioned in steps in, the liquid level in crucible 1 in single crystal growing furnace body remains at heavy pot position, described heavy pot position be liquid level in crucible 1 with flow guiding screen 2 bottom distance be 15～25mm, because under the precondition not affecting into crystalline substance, the raising of crucible 1 crucible position makes crystal growth speed accelerate, minimizing monocrystalline is in oxygen alms giver and produces the time in space, reduce the purpose of oxygen alms giver；
Described cranes one in step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 7r/min, and the speed that crucible 1 rises is 0mm/min, and the speed of crystal growth is 2mm/min～6mm/min, now also comprise control oxygen step, inert gas flow in single crystal growing furnace body is 30L/min, under the precondition not affecting into crystalline substance, keeps the raising of heavy pot position and crucible 1 crucible position that crystal growth speed is accelerated, minimizing monocrystalline is in oxygen alms giver and produces the time in space, reduces the purpose of oxygen alms giver；
In described shouldering step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 7r/min, and the speed that crucible 1 rises is 0.05mm/min, and the speed of crystal growth is 0.7mm/min, now also comprise control oxygen step, inert gas flow in single crystal growing furnace body is 30L/min, it is ensured that in whole shouldering process, crucible position remains at high crucible position of craning one, and after making turn shoulder, crystal growth speed is accelerated, minimizing monocrystalline is in oxygen alms giver and produces the time in space, reduces the purpose of oxygen alms giver；
Described turns in shoulder step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 7r/min, the speed that crucible 1 rises is 0.15mm/min, the speed of crystal growth is 0.7mm/min～2mm/min, now also comprise control oxygen step, inert gas flow in single crystal growing furnace body is 30L/min, continue to strengthen crucible and rise to certainty ratio, until given crucible rises ratio and meets isometrical crucible liter ratio, guarantee that crucible position remains at high crucible position of craning one in whole turn of shoulder process, crystal growth speed is made to remain high pulling rate, minimizing monocrystalline is in oxygen alms giver and produces the time in region, reduce the purpose of oxygen alms giver；
In described isometrical step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 7r/min, the speed that crucible 1 rises is 0.19mm/min, the speed of crystal growth is 0.85mm/min～1.05mm/min, now also comprise control oxygen step, inert gas flow in single crystal growing furnace body at the uniform velocity reduces from 30L/min to 20L/min, ensure vacuum pumping speed, increase the flow of noble gas, should ensure that crystal growth crucible position is constant all the time, ensure surface of the silicon liquid quick heat radiating again, improve rate of crystalline growth, shorten the isometrical time, make the temperature range produced in single crystal growth process quickly through oxygen alms giver, reduce the purpose of oxygen alms giver；
In described finishing steps, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 7r/min, the speed that crucible 1 rises is 0.15mm/min, the speed of crystal growth is 0.5mm/min～1.15mm/min, now also comprise control oxygen step, inert gas flow in single crystal growing furnace body is 20L/min, owing to being arc bottom silica crucible before ending, material surface area is gradually reduced, crucible liter must be continued to increase to certainty ratio, remain crucible position when craning one, accelerate terminal velocity, whole monocrystalline is made to reduce the temperature province produced by oxygen alms giver, reduce the purpose of oxygen alms giver；
In described control oxygen step, make full use of low oxygen process crystal pulling, improve crucible speed of walking around and turn to 8-10, it is suppressed that the thermal convection current in silicon liquid, do not allow a large amount of SiO that quartz crucible and silicon contact surface produce enter in silicon liquid, strict control head of single crystal oxygen content。
Also include single crystal growing furnace internal insulation layer and the improvement of flow guiding screen 2 heat-insulation layer, described single crystal growing furnace internal insulation layer is from the heat preservation zone, top 3 that the upper oral part of crucible 1 is divided into upper and lower two parts to be connected and heat preservation zone, bottom 4, the sidewall of described heat-insulation layer generally upper-thin-lower-thick shape, the thickness of heat preservation zone, bottom 4 is at least not less than 80mm, and the thickness of heat preservation zone, top 3 is not more than 58mm；
The improvement of described flow guiding screen 2 heat-insulation layer includes the improvement of heat-insulation layer height and the improvement of heat-insulation layer position, heat-insulation layer height reduction within flow guiding screen 2 is to not higher than 167mm, heat-insulation layer within flow guiding screen 2 is arranged on the bottom of flow guiding screen 2, is provided with cavity at the top within flow guiding screen 2。
Specific embodiment 2, as shown in Figure 1, a kind of manufacturing technique method controlling oxygen alms giver's monocrystalline, including step of craning one, shouldering step, turn shoulder step, isometrical step, finishing steps and control oxygen step, above-mentioned in steps in, the liquid level in crucible 1 in single crystal growing furnace body remains at heavy pot position, described heavy pot position be liquid level in crucible 1 with flow guiding screen 2 bottom distance be 15～25mm, because under the precondition not affecting into crystalline substance, the raising of crucible 1 crucible position makes crystal growth speed accelerate, minimizing monocrystalline is in oxygen alms giver and produces the time in space, reduce the purpose of oxygen alms giver；
Described cranes one in step, the rotating speed of seed crystal is 8r/min, the rotating speed of crucible 1 is 9r/min, and the speed that crucible 1 rises is 0mm/min, and the speed of crystal growth is 0mm/min～6mm/min, now also comprise control oxygen step, inert gas flow in single crystal growing furnace body is 40L/min, under the precondition not affecting into crystalline substance, keeps the raising of heavy pot position and crucible 1 crucible position that crystal growth speed is accelerated, minimizing monocrystalline is in oxygen alms giver and produces the time in space, reduces the purpose of oxygen alms giver；
In described shouldering step, the rotating speed of seed crystal is 8r/min, the rotating speed of crucible 1 is 9r/min, and the speed that crucible 1 rises is 0.15mm/min, and the speed of crystal growth is 0.7mm/min, now also comprise control oxygen step, inert gas flow in single crystal growing furnace body is 40L/min, it is ensured that in whole shouldering process, crucible position remains at high crucible position of craning one, and after making turn shoulder, crystal growth speed is accelerated, minimizing monocrystalline is in oxygen alms giver and produces the time in space, reduces the purpose of oxygen alms giver；
Described turns in shoulder step, the rotating speed of seed crystal is 8r/min, the rotating speed of crucible 1 is 9r/min, the speed that crucible 1 rises is 0.195mm/min, the speed of crystal growth is 0.7mm/min～2mm/min, now also comprise control oxygen step, inert gas flow in single crystal growing furnace body is 40L/min, continue to strengthen crucible and rise to certainty ratio, until given crucible rises ratio and meets isometrical crucible liter ratio, guarantee that crucible position remains at high crucible position of craning one in whole turn of shoulder process, crystal growth speed is made to remain high pulling rate, minimizing monocrystalline is in oxygen alms giver and produces the time in region, reduce the purpose of oxygen alms giver；
In described isometrical step, the rotating speed of seed crystal is 8r/min, the rotating speed of crucible 1 is 9r/min, the speed that crucible 1 rises is 0.22mm/min, the speed of crystal growth is 0.85mm/min～1.05mm/min, now also comprise control oxygen step, inert gas flow in single crystal growing furnace body at the uniform velocity reduces from 40L/min to 20L/min, ensure vacuum pumping speed, increase the flow of noble gas, should ensure that crystal growth crucible position is constant all the time, ensure surface of the silicon liquid quick heat radiating again, improve rate of crystalline growth, shorten the isometrical time, make the temperature range produced in single crystal growth process quickly through oxygen alms giver, reduce the purpose of oxygen alms giver；
In described finishing steps, the rotating speed of seed crystal is 8r/min, the rotating speed of crucible 1 is 9r/min, the speed that crucible 1 rises is 0.05mm/min, the speed of crystal growth is 0.5mm/min～1.15mm/min, now also comprise control oxygen step, inert gas flow in single crystal growing furnace body is 20L/min, owing to being arc bottom silica crucible before ending, material surface area is gradually reduced, crucible liter must be continued to increase to certainty ratio, remain crucible position when craning one, accelerate terminal velocity, whole monocrystalline is made to reduce the temperature province produced by oxygen alms giver, reduce the purpose of oxygen alms giver；
In described control oxygen step, make full use of low oxygen process crystal pulling, improve crucible speed of walking around and turn to 8-10, it is suppressed that the thermal convection current in silicon liquid, do not allow a large amount of SiO that quartz crucible and silicon contact surface produce enter in silicon liquid, strict control head of single crystal oxygen content。
Also include single crystal growing furnace internal insulation layer and the improvement of flow guiding screen 2 heat-insulation layer, described single crystal growing furnace internal insulation layer is from the heat preservation zone, top 3 that the upper oral part of crucible 1 is divided into upper and lower two parts to be connected and heat preservation zone, bottom 4, the sidewall of described heat-insulation layer generally upper-thin-lower-thick shape, the thickness of heat preservation zone, bottom 4 is at least not less than 80mm, and the thickness of heat preservation zone, top 3 is not more than 58mm；
The improvement of described flow guiding screen 2 heat-insulation layer includes the improvement of heat-insulation layer height and the improvement of heat-insulation layer position, heat-insulation layer height reduction within flow guiding screen 2 is to not higher than 167mm, heat-insulation layer within flow guiding screen 2 is arranged on the bottom of flow guiding screen 2, is provided with cavity at the top within flow guiding screen 2。
Specific embodiment 3, as shown in Figure 1, a kind of manufacturing technique method controlling oxygen alms giver's monocrystalline, including step of craning one, shouldering step, turn shoulder step, isometrical step, finishing steps and control oxygen step, above-mentioned in steps in, the liquid level in crucible 1 in single crystal growing furnace body remains at heavy pot position, described heavy pot position be liquid level in crucible 1 with flow guiding screen 2 bottom distance be 15～25mm, because under the precondition not affecting into crystalline substance, the raising of crucible 1 crucible position makes crystal growth speed accelerate, minimizing monocrystalline is in oxygen alms giver and produces the time in space, reduce the purpose of oxygen alms giver；
Described cranes one in step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 8r/min, and the speed that crucible 1 rises is 0mm/min, and the speed of crystal growth is 0mm/min～6mm/min, now also comprise control oxygen step, inert gas flow in single crystal growing furnace body is 30L/min, under the precondition not affecting into crystalline substance, keeps the raising of heavy pot position and crucible 1 crucible position that crystal growth speed is accelerated, minimizing monocrystalline is in oxygen alms giver and produces the time in space, reduces the purpose of oxygen alms giver；
In described shouldering step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 8r/min, the speed that crucible 1 rises at the uniform velocity increasing to 0.15mm/min from 0.05mm/min, the speed of crystal growth is 0.7mm/min, now also comprise control oxygen step, inert gas flow in single crystal growing furnace body is 30L/min, guarantee that crucible position remains at high crucible position of craning one in whole shouldering process, after making turn shoulder, crystal growth speed is accelerated, minimizing monocrystalline is in oxygen alms giver and produces the time in space, reduces the purpose of oxygen alms giver；
Described turns in shoulder step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 8r/min, the speed that crucible 1 rises is that 0.15mm/min at the uniform velocity increases to 0.195mm/min, the speed of crystal growth is 0.7mm/min～2mm/min, now also comprise control oxygen step, inert gas flow in single crystal growing furnace body is 30L/min, continue to strengthen crucible and rise to certainty ratio, until given crucible rises ratio and meets isometrical crucible liter ratio, guarantee that crucible position remains at high crucible position of craning one in whole turn of shoulder process, crystal growth speed is made to remain high pulling rate, minimizing monocrystalline is in oxygen alms giver and produces the time in region, reduce the purpose of oxygen alms giver；
In described isometrical step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 8r/min, the speed that crucible 1 rises is that 0.195mm/min at the uniform velocity increases to 0.22mm/min, the speed of crystal growth is 0.85mm/min～1.05mm/min, now also comprise control oxygen step, inert gas flow in single crystal growing furnace body at the uniform velocity reduces from 30L/min to 20L/min, ensure vacuum pumping speed, increase the flow of noble gas, should ensure that crystal growth crucible position is constant all the time, ensure surface of the silicon liquid quick heat radiating again, improve rate of crystalline growth, shorten the isometrical time, make the temperature range produced in single crystal growth process quickly through oxygen alms giver, reduce the purpose of oxygen alms giver；
In described finishing steps, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 8r/min, the speed that crucible 1 rises is 0.1mm/min, the speed of crystal growth is 0.5mm/min～1.15mm/min, now also comprise control oxygen step, inert gas flow in single crystal growing furnace body is 20L/min, owing to being arc bottom silica crucible before ending, material surface area is gradually reduced, crucible liter must be continued to increase to certainty ratio, remain crucible position when craning one, accelerate terminal velocity, whole monocrystalline is made to reduce the temperature province produced by oxygen alms giver, reduce the purpose of oxygen alms giver；
In described control oxygen step, make full use of low oxygen process crystal pulling, improve crucible speed of walking around and turn to 8-10, it is suppressed that the thermal convection current in silicon liquid, do not allow a large amount of SiO that quartz crucible and silicon contact surface produce enter in silicon liquid, strict control head of single crystal oxygen content。
Also include single crystal growing furnace internal insulation layer and the improvement of flow guiding screen 2 heat-insulation layer, described single crystal growing furnace internal insulation layer is from the heat preservation zone, top 3 that the upper oral part of crucible 1 is divided into upper and lower two parts to be connected and heat preservation zone, bottom 4, the sidewall of described heat-insulation layer generally upper-thin-lower-thick shape, the thickness of heat preservation zone, bottom 4 is at least not less than 80mm, and the thickness of heat preservation zone, top 3 is not more than 58mm；
The improvement of described flow guiding screen 2 heat-insulation layer includes the improvement of heat-insulation layer height and the improvement of heat-insulation layer position, heat-insulation layer height reduction within flow guiding screen 2 is to not higher than 167mm, heat-insulation layer within flow guiding screen 2 is arranged on the bottom of flow guiding screen 2, is provided with cavity at the top within flow guiding screen 2。
When starting working, first all for hot systems parts are cleaned out, utilize reduction electrode column height to strengthen the distance on edge and the lower edge of big lid on heater, regulated laggard luggage material, evacuation, material, stablize, craned one。
Regulating crucible position before craning one to be checked silicon liquid level under guide shell along inverted image from observation window by guide shell, after cannot see inverted image, crucible position promotes 15-20mm is crucible position of craning one, and generally the crucible position of craning one of prior art is for till can't see guide shell inverted image；Seed crystal contacts with liquid level to stablize 20 minutes and starts about 150mm shouldering of craning one, process of craning one promotes gradually and improves crucible speed of walking around and turn to 8-10, shouldering slowly gave crucible liter after 15-20 minute, crucible position in shouldering process is made to remain constant, shouldering size starts lift speed after specified diameter 4/5ths and turns shoulder, crucible rises ratio and gives isometrical ratio, turn and after shoulder diameter reaches standard specified diameter, throw the automatic control isometrical step of entrance, strengthen the flow of noble gas to reduce surface of the silicon liquid temperature simultaneously, accelerate monocrystalline crystallize velocity of variation, guarantee that crystal remains at high pulling rate in whole isometrical process, high crucible position, quickly through the temperature range of 500-300 ° under the environment of high argon flow amount, realize reducing oxygen alms giver's monocrystalline, by above step, oxygen alms giver's monocrystalline is reduced to about 0.6% from 1.2%, decrease the oxygen alms giver's monocrystalline produced in production and improve monocrystalline quality。
The advantage that the present invention compared with prior art exists:
1, in crystal growing process, remain that high crucible position, high pulling rate are isometrical, shorten the isometrical time, make the temperature range produced quickly through oxygen alms giver in single crystal growth process, reach the purpose of high yield, stable yields, reduction oxygen alms giver；
2, make full use of low oxygen process crystal pulling, improve crucible speed of walking around and turn to 8-10, it is suppressed that the thermal convection current in silicon liquid, reduce a large amount of SiO that quartz crucible and silicon contact surface produce and enter in silicon liquid, strict control head of single crystal oxygen content。
Claims (3)
1. the manufacturing technique method controlling oxygen alms giver's monocrystalline, including step of craning one, shouldering step, turn shoulder step, isometrical step, finishing steps and control oxygen step, it is characterized in that: above-mentioned in steps in, the liquid level in crucible (1) in single crystal growing furnace body remains at high crucible position, and the distance that described high crucible position is the liquid level in crucible (1) and flow guiding screen (2) bottom is 15～25mm；
Described cranes one in step, and the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible (1) is 7～9r/min, and the speed that crucible (1) rises is 0mm/min；
In described shouldering step, the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible (1) is 7～9r/min, and the speed that crucible (1) rises is 0.05～0.15mm/min；
Described turns in shoulder step, and the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible (1) is 7～9r/min, and the speed that crucible (1) rises is 0.15～0.2mm/min；
In described isometrical step, the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible (1) is 7～9r/min, and the speed that crucible (1) rises is 0.19～0.25mm/min；
In described finishing steps, the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible (1) is 7～9r/min, and the speed that crucible (1) rises is 0.15～0.05mm/min；
Described control oxygen step is control the inert gas flow in single crystal growing furnace body, cranes one in step described, and the inert gas flow in single crystal growing furnace body is 30～40L/min；
In described shouldering step, the inert gas flow in single crystal growing furnace body is 30～40L/min；
Turning in shoulder step described, the inert gas flow in single crystal growing furnace body is 30～40L/min；
In described isometrical step, the inert gas flow in single crystal growing furnace body at the uniform velocity reduces from 40L/min to 20L/min；
In described finishing steps, the inert gas flow in single crystal growing furnace body is 20L/min；
The heat-insulation layer that in single crystal growing furnace body, flow guiding screen (2) is internal is arranged on the bottom of flow guiding screen (2), and the top internal at flow guiding screen (2) is provided with cavity。
2. a kind of manufacturing technique method controlling oxygen alms giver's monocrystalline according to claim 1, it is characterised in that: described cranes one in step, and the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible is 8r/min, and the speed that crucible rises is 0mm/min；
In described shouldering step, the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible is 8r/min, and the speed that crucible rises at the uniform velocity increasing to 0.15mm/min from 0.05mm/min；
Described turns in shoulder step, and the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible is 8r/min, and the speed that crucible rises is that 0.15mm/min at the uniform velocity increases to 0.195mm/min；
In described isometrical step, the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible is 8r/min, and the speed that crucible rises is that 0.195mm/min at the uniform velocity increases to 0.22mm/min；
In described finishing steps, the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible is 8r/min, and the speed that crucible rises is 0.1mm/min。
3. a kind of manufacturing technique method controlling oxygen alms giver's monocrystalline according to claim 1, it is characterised in that: craning one in step described, the inert gas flow in single crystal growing furnace body is 30L/min；
In described shouldering step, the inert gas flow in single crystal growing furnace body is 30L/min；
Turning in shoulder step described, the inert gas flow in single crystal growing furnace body is 30L/min；
In described isometrical step, the inert gas flow in single crystal growing furnace body at the uniform velocity reduces to 20L/min from 30L/min；
In described finishing steps, the inert gas flow in single crystal growing furnace body is 20L/min。
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| CN104357901A (en) * | 2014-10-30 | 2015-02-18 | 内蒙古中环光伏材料有限公司 | Method for reducing oxygen donor content of Czochralski monocrystal |
| CN104451872A (en) * | 2014-11-14 | 2015-03-25 | 邢台晶龙电子材料有限公司 | Production method of solar-grade czochralski silicon |
| CN104372406A (en) * | 2014-11-14 | 2015-02-25 | 邢台晶龙电子材料有限公司 | Method for producing solar grade Czochralski silicon |
| CN104328495A (en) * | 2014-11-14 | 2015-02-04 | 邢台晶龙电子材料有限公司 | Production method of solar grade czochralski monocrystalline silicon |
| CN104962988A (en) * | 2015-06-04 | 2015-10-07 | 宁晋晶兴电子材料有限公司 | Silicon rod manufacturing method capable of reducing silicon rod concentric circles |
| CN105177702A (en) * | 2015-10-20 | 2015-12-23 | 宁晋松宫电子材料有限公司 | Production process capable of controlling circular defect of monocrystal |
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