4 6 1 04 54 6 1 04 5
五、發明說明（1 ) 發明範圍 本發明通常係關於半導體晶圓的切成塊狀。更特別地， 本發明係關於-種在將此半導體晶圓之機械切塊之前用於 半導體晶圓之雷射刻線的方法。 發明背景 藉由鑛開使晶粒分開，或切成塊狀是用一旋轉圓形的研 磨鋸齒刀刃纟切割一微電子基板成爲個別㈣路晶粒的程 序。 晶圓切塊的技術進步快速，而切塊現在已經是—強制性 的程序在大部分前端半導體封裝操作中。其廣泛地用於在 珍基體電路晶圓上晶粒的分開。 在微波和混合電路，記憶體，電腦，防衛和醫療電子裝 置中微電子技術之使用的增加，對於此產業已經造成一大 堆新的且困難的問題。更昴貴和外來的材料，像藍寶石， 石榴石，礬土，陶瓷，玻璃.，石英，亞鐵鹽，和其他硬 的，易碎的基板正被使用中。其經常被组合以產生多層不 同的材料，因此更加於此切塊的問題。這些基板與製造於 經濟部智慧財產局員工消費合作社印製 其上之電路的價値一起的高成本，使其很難接受在晶粒分 離階段任何不到高產出的狀況。 切塊疋用研磨粒子之加工的機械程序。其假定此程序的 機構類似於蠕動研磨。像這樣，可以發現在材料中的一相 似性，在切塊和研磨之間的移除行爲。然而，此用於晶粒 分離之切塊刀刀的尺寸，使此程序唯一。典型地，此刀刃 厚度的範圍從 0.6 mils 到 50 mils (0.015 mm 到 127 ， _____-4- 本紙張尺度顧巾襲家標準（CNS)A4規格（21G X 297公髮) -"~~ --------- 4 6 1 〇4 5 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（2 ) 而靖石粒子（已知最硬的材料）被用作研磨材料成分。因爲 此鑽石切塊刀刀的極度精細，依照一組嚴格的參數是勢在 必仃的，甚至規範上最小的偏差也可能造成完全的失敗。 圖1是在半導體裝置製造期間一半導體晶圓1〇〇的等大 視圖。一傳統的半導體晶圓100可能具有許多晶片，或晶 粒，議a，麵，…，形成在其上平面上。爲了彼此^ 開此晶片100a，100b，...和晶圓100，一連串正交的線或 "街道"102，104被切開在此晶圓1〇〇中。此程序也稱爲將 此晶圓切塊。 切塊鋸齒的刀刃做成一圓盤形式，其不是夾在一中樞的 邊緣之間就是建立在一中樞上，其精確地定位此薄而柔靱 的鋸齒刀刃。， 今天的高級1C晶圓通常鍍有一氧化物或氮化物的鈍化 層，其更被一聚合物的保護層所覆蓋（共同地顯示如圖I 中的106)。此材料的组合具有一重要的影響在晶圓切塊和 晶粒邊緣的品質上。如圖4中所示，當使用傳統的切塊技 術，像單一刀刀和單一切割時，在半導體晶圓4〇〇之底部 上的晶粒邊緣遭受嚴重的背部碎片（BSC) 4〇6 。此外，在 此晶圓400之頂端，在晶粒邊緣的問題包括鈍化層（未示 出）的破裂和聚合.銀（未示出）的形成。 一克服前述之晶粒邊緣問題的方法是一機構雙重切塊 法。此方法是兩次切割的結合，第一次切割是淺的而第二 次是切穿。第一次切割通常用一斜角的刀刃而第二次用一 標準的刀刃。第一次切割的目的是從半導體晶圓1〇〇的街 裝— —--訂---------線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 公釐 4S 了 〇4 5 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（ 道102 ’ 104去除聚合物塗料和鈍化層ι〇6爲了容許一平順 的切穿。從街道102，1〇4去除塗料和鈍化層1〇6也影響背 邵碎片。結果，碎片的尺寸被減小了一些。然而，對於斜 角的切割有二個缺點。第—，當刀刃用鈍時，切口會變寬 而這需要經常處理和換刀刀。此外，此鈍化層的機械去除 造成殘渣碎裂，其造成此晶粒進一步的惡化。 對於此斜角的切割有其他的缺點。就是刀刃滲入高度必 須很小心地監控’因爲對於滲入的每一微米，此切口變寬 大約2微米。此外，此斜角的刀刀可能插入隱藏的損害在 此晶粒邊緣，例如以碎裂的形式。切塊後晶粒的視覺檢查 (—工業標準）不能偵測出此種損害。此外，斜角的刀刃快 速地用鈍且需要經常更換，其爲一昂貴的程序。 有鑑於先前技術的缺點，有一發展一種切割具有鈍化層 之晶粒之方法的需求使得被背後的碎片最少，且增加可用 電路的產量。 發明摘要 有鑑於先前技術的缺點，本發明的一目的在於最佳化此 切塊過程和使半導體晶圓的底部碎片最少。 本發明是一種方法，藉由將一雷射光束聚焦在—基板上 表面上來用於此半導體基板之切塊；藉由掃描此雷射光束 通過基板表面來形成刻線在此基板上；及沿此刻線將此基 板切塊以形成許多晶粒。 根據本發明的另-樣予，此基板用—切塊的据子在此基 板被刻線後來切塊。 ---^----------^1' 裝--------·訂---------線 /1- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（4 ) 根據本發明還有的另_樣子，此刻線的深度是介於大約 0 001英忖（0.025職）和0·002英对（〇 〇5〇匪)之間。 本發月的k些和其他的樣子將藉由參考圖例和本發明之 範例的具體裝置來說明於下。 圖例概述 、本發月最佳的瞭解是由以下的詳細描述，當連同此伴隨 圖例起讀時。其強賙’根據普通的練習，此圖之各種 的特徵未‘比例。相反地，此各種特徵的尺寸被任意地擴 展或降低爲了清楚。包括於此_例中的是以下的圖·· 圖爲用以形成半導體裝置之半導體晶圓的等大視 圖； 圖2爲—本發明的範例之方法的圖； 圖3局一本發明的範例之具體裝置的圖； 圖4爲基板在使用傳統之單一刀刀技術切塊後之背部 碎片的説明； 圖5爲基板在使用根據本發明之第一範例具體裝置切 塊後之背部碎片的説明； 圖6爲一基板在使用根據本發明之一範例具體裝置切塊 後之背部碎片的另一説明； 圖7爲—未經處理之基板在切塊後之背部碎片的説明； 圖8爲一未經處理之基板在切塊後之背部碎片的另一説 明； 圖9爲基板在使用根據本發明之另一範例具體裝置切 塊後之背部碎片的説明；及 _____ -7- 1本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公楚）------- ^ In-------Γ 裝--------訂---------線 ί Γ (請先閱讀背面之注意事項再填寫本頁) 461045 A7 B7 五、發明說明（5 ) 圖10爲一基板在使用根據本發明之還有另—範例具體 裝置切塊後之背部碎片的説明。 圖11爲在街道交又點處一基板在使用根據本發明之一 範洌具體裝置切塊後之背部碎片的説明。 詳細的描述 在半導體裝置的製造中，個別的晶片被使用—非常高速 旋轉的鋸齒刀刃切割自一大的晶圓。實際上，此鋸齒刀刃 研磨掉一部分的晶圓沿著線性街道或切口（如圖1中所示 之102 ’ 104)在一方向跟随著第二操作在—垂直方向中。 此晶粒（晶片）的品質直接地與在切塊操作期間碎片的最 小化有關。發明者已經判斷使用一非機械方法在基板將被 切穿的範圍中—自此基板去除純化層會使BSC最小並增加 此裝置的產量。 參考圖2，顯示本發明之一範例具體裝置的流程圖。參 考圖3，顯示範例的雷射刻線原理。 在圖2中，在步驟200，來自於雷射3〇〇 (顯示於圖3中）的 雷射光束302聚焦在基板1〇〇的表面上。必須注意此雷射光 束302也可能聚焦在基板1〇〇之表面上方或下方的一點。在 步驟205，此雷射光束302被掃描越過此鈍化層106的表面 以去除鈍化層106並形成希望的刻線1〇2。此刻線的深度可 '以介於大約英吋（0.025 mm)和0.002英吋（0.050 mm)之 間。 在此範例的具體裝置中，雷射光束3〇2的直徑大約是 50 μιη，雖然如果需要的話可以使用其他的直徑》在形成 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裳-------訂--------•線· 經濟部智慧財產局員工消費合作社印製 4 6 1 〇4 5 Α7 Β7 五、發明說明（6 ) (請先閲讀背面之注意事項再填寫本頁) 街道102，104中，此雷射光束302僅穿透此鈍化層而不會 撞擊在此基板1〇〇的表面上可能是理想的。此外，雷射光 束302可以用來在切塊之前自街道1〇2 , ι〇4去除聚合物塗 料，像一聚醯亞胺，和鈍化層。 在此範例的具體裝置中，雷射300是固定的，而基板1〇〇 在方向A移動，例如，使用一常用的χ_γ表格（未示出）在 其上此基板1〇〇被安裝，以形成街道1〇2。當每一街道1〇2 被完成’基板100被移動在χ_γ表格的Β方向中，且此程序 對於一額外的街道102被重複。 在形成所有的街道1〇2後，基板1〇〇被旋轉大約9〇度使得 此私序可以被重複以在基板100中形成街道104。此外，雷 射300可以相對淤一固定的基板1〇〇移動在χ或γ或二者同 時的方向。 在步驟210，此基板使用常用的方法來切塊，像一切塊 鋸齒，沿街道102，104以形成晶粒100a，100b，等等。 雷射刻線的一優點是，雷射刻線可以以一遠高於常用的 斜角切割切塊程序以去除鈍化層的供給率。然而必須注 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 意，此伴隨雷射刻線之研磨切塊和此刻線的供給率不需要 相同。 此雷射刻線勝於斜角切割的其他優點是，υ消除對於筇 貴刀刃的需求，和2 )允許封裝此鈍化層的可能性，因此避 免破裂的形成。 在第—種範例的方法中，—晶圓（基板）用一 c〇2雷射光 束處理以在切割前自此晶圓的街道去除塗料，爲了減少 -9- χ297™5^Τ 經濟部智慧財產局員工消費合作社印製 4 6 10 4 5 A7 B7 五、發明說明（7 ) BSC。此晶圓用一均勻的能階處理以去除此聚酿亞胺塗 料。所有的街道1〇2 ’ 104根據相同的參數被處理。此co2 雷射的參數如下： . 功率=15瓦特 速度=〜2 V秒（1 mm /秒） 跟隨著雷射刻線’ 此晶圓在一常用的切塊裝置上使用以 下的參數來切塊： 供給率：2”/秒（50.8 mm/秒） 軸速：30,000 rpm 刀刀型式：1235-010 水流：主要的1.5 L/min ’ 清潔的1 L/mip， 喷識样1 L/min， 此晶圓受到顯微鏡的分析以判斷產生自切塊操作之BSC 的量。圖5是此BSC結果的一放大視圖500，其中此聚醯亞 胺層根據第一種範例之具體裝置在對此基板切塊前自此街 道被去除。如圖5中所示，此最大的BSC 502是大約60 μπι 而平均的BSC 504是大約22 μιη。 相反地，圖4是此BSC結果的一放大視圖400，其中此聚 醯亞胺在對此基板切塊前未被去除。如圖4中所示，此最 大的BSC 402是大約165 μιη而平均的BSC 404是大約100 μιη。 在第二範例之具體裝置中，二晶圓被安置在Ν,ΙΤΤ〇帶 上。僅有此晶圓之一被C02雷射光束處理以在切割前自此 -10- 本紙張尺度適用中國國家標準（cns)A4規格（210 X 297公釐） >1'--I Ί---丨丨--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 4 β 1 〇45 Α7 Β7 五、發明說明（8 ) 晶圓的街道去除塗料。此晶圓用一均勻的能階處理以去除 此聚醯亞胺塗料。每一晶圓街道根據相同的參數被處理。 此C〇2雷射的參數如下. 功率=15瓦特 供給率=2_5Π/秒（63.5 mm/秒） 跟隨著雷射刻線，此晶圓在一常用的切塊裝置上使用以 下的參數來切塊： 速率：2”/秒（50.8 mm/秒） 軸速：30,000 rpm 刀刃型式：1235-010 水流：主要的1.5 L/min， 清潔的1 L/mip， 噴賤桿1 L/min， 雖然說明特定的軸速，注意此軸速可以是至少2,000 RPM和可以是高至60,000 RPM。此外，除了一 C02雷射， 可_以使用其他型式的雷射’像一 YAG雷射或一Excimer雷 射。不同雷射的使用可以產生BSC改善的變化程度。 此雷射主要用以去除各種表面塗料，而不會破壞此刻線 的邊緣。此改善的BSC產生自塗料的移除。 此晶圓受到顯微鏡的分析以判斷產生自切塊操作之BSC 的量。 -11- 巾酬家鮮（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注音？事項再氧寫本頁) 經濟部智慧財產局員工消費合作社印製 __— — —— — —I I L1- I ..1 —. I J I ---I — — — — — — ---- I I I I I ί .....I — — — — — — — — — — — — — 4 04 5 A7 B7 五、發明說明（9 ) 表1説明上面測試之BS 頻道 1 1 線# 1 2 由雷射刻線處 平均 29 19 理的塗料 最大 69 41 未由雷射刻線 平均 67 79 處理的塗料 最大 170 178 C碎片的結果： 3 17 37 -* — 64 134 1 2 2 2 2 Total 4 . AVG 5 6 7 8 AVG average 11 19 30 18 24 25 24 21.5 34 45 59 42 47 57 51 48 80 73 45 44 40 43 43 58 205 172 156 143 119 116 134 153 表1 (請先閱讀背面之注意事項再填寫本頁) ‘明於圖6和7中，藉由C02雷射之聚 經濟部智慧財產局員工消費合作社印製 如表1中所示，及説明於圖6和7中，藉由C02雷射之聚 醯亞胺塗料的去除改善此BSC的結果，從153 pm最大（圖7 中的702 )到58 μίη平均（圖7中的704 ) BSC至48 μιη最大（圖6 中的602 )到21.5 pm平均（圖6中的604 )。 在一進一步的測試中，七片晶圓被放置在NJTTO帶上並, 用C〇2雷射光束處理。這七片晶圓被分割成三群，每一群 三片晶圓的兩群，用以比較二雷射光束能階之間，和一片 晶圓的一群，用作對於標準切塊的一參考。此晶圓用一均 勻的能階處理以去除如上之聚醯亞胺塗料。 此晶圓街道首先根據以下的參數用一 C02雷射處理： 群組#1 群組#2 功率=10瓦特 功率=15瓦特 供給率=13，，/ 秒（330.2 mm / 秒） 供給率=13" / 秒（330.2 mm / 秒） 伴随此雷射處理，然後所有的晶圓在一常用的切塊機器 上用以下的參數切塊（切穿）·· 12- 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公爱） -1045 A7 _B7_ 五、發明說明（10 ) 供給率：2.5”/秒（63.5 mm/秒） 軸速：30,000 rpm 刀刃型式：Disco-NBC-ZH205F-SE. 水流：主要的1.5 L/min 5 清潔的1 L/min， 噴錢样1 L/min，V. Description of the invention (1) Scope of the invention The present invention generally relates to the cutting of semiconductor wafers into blocks. More particularly, the present invention relates to a method for laser scoring of a semiconductor wafer before mechanical dicing of the semiconductor wafer. BACKGROUND OF THE INVENTION The process of separating crystal grains by ore mining, or cutting into blocks, is a process of cutting a microelectronic substrate with a rotating circular grinding serrated blade to form individual crystal grains. The technology of wafer dicing has progressed rapidly, and dicing is now a mandatory procedure in most front-end semiconductor packaging operations. It is widely used for the separation of die on a substrate circuit wafer. The increasing use of microelectronics in microwave and hybrid circuits, memory, computers, defense and medical electronics has created a host of new and difficult problems for this industry. More expensive and exotic materials like sapphire, garnet, alumina, ceramics, glass, quartz, ferrous salts, and other hard, fragile substrates are being used. It is often combined to produce multiple layers of different materials and is therefore more of a problem with dicing. The high cost of these substrates, together with the price of the circuits printed on them by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, makes it difficult to accept any situation where the output is not high during the grain separation stage. A mechanical procedure for the processing of dicing and grinding particles. It assumes that the mechanism of this procedure is similar to peristaltic grinding. As such, a similarity can be found in the material, the removal behavior between dicing and grinding. However, the size of this dicing knife for grain separation makes this procedure unique. Typically, the thickness of this blade ranges from 0.6 mils to 50 mils (0.015 mm to 127, _____- 4- this paper size is based on CNS) A4 specifications (21G X 297 public hair)-" ~~- -------- 4 6 1 〇 4 5 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention (2) Jingshi particles (the hardest material known) are used as the abrasive material composition Because of the extreme fineness of this diamond dicing knife, it is imperative to follow a strict set of parameters, and even the smallest deviation in specifications may cause complete failure. Figure 1 is a semiconductor wafer during semiconductor device manufacturing Large-scale view of 100. A conventional semiconductor wafer 100 may have many wafers, or dies, on a surface, ..., formed on the upper plane. To open the wafers 100a, 100b, etc. to each other. A series of orthogonal lines or " streets " 102,104 and wafer 100 are cut into this wafer 100. This procedure is also known as dicing this wafer. The blade of the dicing sawtooth is made A disc form that is either sandwiched between the edges of a hub or built on a hub It precisely locates this thin and flexible serrated blade. Today's advanced 1C wafers are usually plated with an oxide or nitride passivation layer, which is further covered by a protective layer of polymer (commonly shown in Figure I 106). This material combination has an important impact on the quality of wafer dicing and die edges. As shown in Figure 4, when using traditional dicing techniques, such as single knife and single cut The edge of the die on the bottom of the semiconductor wafer 400 suffers from severe back shards (BSC) 406. In addition, at the top of this wafer 400, problems at the edge of the die include a passivation layer (not shown) ) Cracking and aggregation. The formation of silver (not shown).-A method to overcome the aforementioned problem of grain edges is a dual-division method. This method is a combination of two cuts. The first cut is shallow and The second time is cut through. The first cut usually uses a beveled blade and the second time uses a standard blade. The purpose of the first cut is to order from the semiconductor wafer 100 street. --------- Line (Please read the precautions on the back before filling (This page) This paper is in accordance with China National Standard (CNS) A4 specifications (21mm 4S and 0504 5 printed by the Intellectual Property Bureau Staff Consumer Cooperatives of the Ministry of Economic Affairs A7. V. Description of the invention (Tao 102 '104 Remove polymer coatings and The passivation layer ι〇6 is to allow a smooth cut through. The removal of paint and passivation layer 106 from streets 102, 104 also affects the back debris. As a result, the size of the debris is reduced a bit. However, for oblique angles There are two disadvantages to cutting. First, when the blade is blunt, the incision becomes wider and this requires frequent handling and knife change. In addition, mechanical removal of the passivation layer causes chipping of the residue, which causes further deterioration of the grains. There are other disadvantages to this beveled cut. It is the height of the blade penetration that must be carefully monitored 'because for each micrometer of penetration, the incision becomes about 2 micrometers wide. In addition, this beveled knife may insert hidden damage at the edge of the die, such as in the form of chipping. Visual inspection of the die after dicing (—industry standard) cannot detect such damage. In addition, the beveled blade is quickly blunt and requires frequent replacement, which is an expensive procedure. In view of the shortcomings of the prior art, there is a need to develop a method for cutting a die having a passivation layer so that the number of chips behind is minimized and the yield of available circuits is increased. SUMMARY OF THE INVENTION In view of the shortcomings of the prior art, it is an object of the present invention to optimize this dicing process and minimize the bottom debris of a semiconductor wafer. The present invention is a method for dicing a semiconductor substrate by focusing a laser beam on the upper surface of the substrate; forming a score line on the substrate by scanning the laser beam through the substrate surface; and This score line diced the substrate to form many grains. According to another aspect of the present invention, the substrate is diced according to the present invention after the substrate is scribed and diced. --- ^ ---------- ^ 1 'Outfit -------- · Order --------- line / 1- (Please read the precautions on the back first (Fill in this page) Printed A7 by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (4) According to another aspect of the present invention, the depth of this engraved line is between about 0 001 Ying (0.025 jobs) and 0 -Between 002 British pairs (50000 bandits). The present and other aspects of the present month will be described below by referring to the drawings and specific devices of the examples of the present invention. Legend overview, the best understanding of this month is described in detail below, when read together with this accompanying legend. Its strong points' According to ordinary practice, the various features of this figure are not 'scaled'. Instead, the dimensions of this various feature are arbitrarily expanded or reduced for clarity. Included in this example are the following diagrams. The diagram is an isometric view of a semiconductor wafer used to form a semiconductor device. Fig. 2 is a diagram of an example method of the present invention. Fig. 3 is an example of the present invention. FIG. 4 is an illustration of the back fragments of the substrate after being diced using a conventional single-knife technique; FIG. 5 is an illustration of the back fragments of the substrate after being diced using a specific device according to the first example of the present invention Figure 6 is another illustration of back fragments of a substrate after dicing using a specific device according to an example of the present invention; Figure 7 is-illustration of back fragments of an untreated substrate after dicing; Figure 8 is a Another illustration of the back fragments of the untreated substrate after dicing; Figure 9 is an illustration of the back fragments of the substrate after dicing using another specific device according to the present invention; and _____ -7-1 paper Standards apply to China National Standard (CNS) A4 specifications (210 X 297 cm) ------------ ^ In ------- Γ Installation -------- Order ------ --- Thread Γ (Please read the notes on the back before filling this page) 461045 A7 B7 V. Description of the invention (5) Figure 10 Using a substrate according to the present invention there is another - the description of particular exemplary apparatus debris cut back. Fig. 11 is an illustration of back fragments of a substrate at a street intersection after being cut using a specific device according to one of the present invention. Detailed description In the manufacture of semiconductor devices, individual wafers are used—very high-speed rotating serrated blades cut from a large wafer. In fact, this sawtooth blade grinds away a portion of the wafer along a linear street or cut (as shown by 102'104 in Fig. 1) following a second operation in one direction in a vertical direction. The quality of this die (wafer) is directly related to the minimization of debris during the dicing operation. The inventors have determined that the substrate will be cut through using a non-mechanical method-removing the purification layer from the substrate will minimize BSC and increase the yield of the device. Referring to FIG. 2, a flowchart of an exemplary device according to the present invention is shown. Refer to Figure 3 for an example laser scribing principle. In FIG. 2, at step 200, a laser beam 302 from a laser 300 (shown in FIG. 3) is focused on the surface of the substrate 100. It must be noted that this laser beam 302 may also be focused at a point above or below the surface of the substrate 100. In step 205, the laser beam 302 is scanned across the surface of the passivation layer 106 to remove the passivation layer 106 and form a desired score line 102. The depth of this ruled line can be between approximately inches (0.025 mm) and 0.002 inches (0.050 mm). In the specific device of this example, the diameter of the laser beam 30 is about 50 μm, although other diameters can be used if necessary. ”In forming this paper, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applied. Li) (Please read the notes on the back before filling out this page) Sang --------- Order -------- • Line Printed by Employee Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs 4 6 1 〇4 5 Α7 Β7 V. Description of the invention (6) (Please read the precautions on the back before filling out this page) In streets 102 and 104, the laser beam 302 only penetrates the passivation layer and does not hit the substrate 100. The surface may be ideal. In addition, the laser beam 302 can be used to remove polymer coatings, such as a polyimide, and a passivation layer from the street 102, 004 before dicing. In the specific device of this example, the laser 300 is fixed, and the substrate 100 is moved in the direction A. For example, a common χ_γ table (not shown) is used to mount the substrate 100 thereon to Form street 102. When each street 102 is completed, the substrate 100 is moved in the B direction of the χ_γ table, and this process is repeated for an additional street 102. After all the streets 102 are formed, the substrate 100 is rotated about 90 degrees so that this private sequence can be repeated to form the streets 104 in the substrate 100. In addition, the laser 300 can be moved in the direction of χ or γ or both relative to a fixed substrate 100. In step 210, the substrate is cut into pieces using a common method, like sawing all the pieces, along the streets 102, 104 to form the grains 100a, 100b, and so on. An advantage of laser engraving is that laser engraving can cut the dicing process at a much higher angle than the commonly used oblique angle to remove the passivation layer supply rate. However, it must be printed by the Intellectual Property Office of the Ministry of Economic Affairs, Consumer Affairs Co., Ltd. The grinding cuts accompanying the laser scribe and the supply rate of this scribe need not be the same. Other advantages of this laser engraving over bevel cutting are that υ eliminates the need for expensive blades, and 2) allows the possibility of packaging this passivation layer, thus avoiding the formation of cracks. In the first example method, the wafer (substrate) is treated with a CO2 laser beam to remove paint from the street of this wafer before dicing. In order to reduce the -9-χ297 ™ 5 ^ Τ Ministry of Economic Affairs wisdom Printed by the Consumer Cooperative of the Property Bureau 4 6 10 4 5 A7 B7 V. Description of Invention (7) BSC. The wafer is treated with a uniform energy level to remove the polyimide coating. All streets 102 ' 104 are processed according to the same parameters. The parameters of this co2 laser are as follows:. Power = 15 Watt Speed = ~ 2 V seconds (1 mm / second) Follow the laser scribe line. This wafer uses the following parameters to dicing on a common dicing device : Supply rate: 2 ”/ second (50.8 mm / second) Shaft speed: 30,000 rpm Knife type: 1235-010 Water flow: Mainly 1.5 L / min 'Clean 1 L / mip, spray sample 1 L / min, The wafer was subjected to a microscope analysis to determine the amount of BSC resulting from the dicing operation. Figure 5 is an enlarged view 500 of the BSC result, where the polyimide layer is applied to the substrate according to the specific device of the first example. It has been removed from this street before dicing. As shown in Figure 5, the largest BSC 502 is about 60 μm and the average BSC 504 is about 22 μm. Conversely, Figure 4 is an enlarged view 400 of the BSC results, The polyimide was not removed before dicing the substrate. As shown in FIG. 4, the largest BSC 402 is about 165 μm and the average BSC 404 is about 100 μm. The specific device in the second example In the process, two wafers are placed on the ΝΤΤ〇 zone. Only one of these wafers is covered by a C02 laser beam. Before cutting, -10- This paper size applies Chinese National Standard (cns) A4 (210 X 297 mm) > 1 '-I Ί --- 丨 丨 -------- Order --------- line (please read the precautions on the back before filling this page) 4 β 1 〇45 Α7 Β7 V. Description of the invention (8) Remove the coating on the street of the wafer. Uniform energy level processing to remove the polyimide coating. Each wafer street is processed according to the same parameters. The parameters of this Co2 laser are as follows. Power = 15 Watt supply rate = 2_5Π / second (63.5 mm / Seconds) Following the laser engraving, this wafer is diced on a common dicing device using the following parameters: Speed: 2 ”/ second (50.8 mm / second) Shaft speed: 30,000 rpm Blade type: 1235- 010 Water flow: Mainly 1.5 L / min, clean 1 L / mip, spray bar 1 L / min, although the specific shaft speed is specified, note that this shaft speed can be at least 2,000 RPM and can be as high as 60,000 RPM. In addition, in addition to a C02 laser, other types of lasers can be used like a YAG laser or an Excimer laser. The use of different lasers can produce varying degrees of BSC improvement. This laser is mainly used to remove a variety of surface coatings without damaging the edges of this score line. This improved BSC results from the removal of the coating. This wafer was analyzed under a microscope to determine the amount of BSC resulting from the dicing operation. -11- CNS A4 Specification (210 X 297 mm) (Please read the note on the back? Matters and then write this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs __ — — —— — —II L1- I ..1 —. IJI --- I — — — — — — ---- IIIII ί ..... I — — — — — — — — — — — — 4 04 5 A7 B7 V. Description of the invention (9) Table 1 shows the BS channel 1 tested above. 1 Line # 1 2 Averaged by laser engraved 29 19 Coatings maximum 69 41 Coatings not processed by laser engraved average 67 79 Results for a maximum of 170 178 C fragments: 3 17 37-* — 64 134 1 2 2 2 2 Total 4. AVG 5 6 7 8 AVG average 11 19 30 18 24 25 24 21.5 34 45 59 42 47 57 51 48 80 73 45 44 40 43 43 58 205 172 156 143 119 116 134 153 Table 1 (Please read the precautions on the back before filling out this page) 'As shown in Figures 6 and 7, by the C02 Laser Gathering Intellectual Property Bureau employee Consumption cooperative prints are shown in Table 1, and illustrated in Figures 6 and 7, the results of this BSC were improved by the removal of the polyimide coating of C02 laser From the (702 in FIG. 7) 153 pm up to 58 μίη average (704 in FIG. 7) BSC to 48 μιη maximum (602 in FIG. 6) to an average of 21.5 pm (604 in FIG. 6). In a further test, seven wafers were placed on an NJTTO tape and processed with a CO2 laser beam. The seven wafers are divided into three clusters, two clusters of three wafers each, to compare the two laser beam energy levels with one cluster of one wafer, which is used as a reference for standard dicing. The wafer was treated with a uniform energy level to remove the polyimide coating as above. This wafer street is first treated with a C02 laser according to the following parameters: Group # 1 Group # 2 Power = 10 Watt Power = 15 Watt Supply Rate = 13, / sec (330.2 mm / sec) Supply Rate = 13 " / Sec (330.2 mm / sec) With this laser processing, all wafers are then diced (cut through) on a common dicing machine with the following parameters. 12- This paper size applies Chinese national standards ( CNS) A4 specification (21〇x 297 public love) -1045 A7 _B7_ V. Description of the invention (10) Supply rate: 2.5 ”/ second (63.5 mm / second) Shaft speed: 30,000 rpm Blade type: Disco-NBC-ZH205F- SE. Water flow: main 1.5 L / min 5 clean 1 L / min, spray money sample 1 L / min,
此晶圓受到顯微鏡的分析以判斷產生自切塊操作之BSC 的量。 表2説明此BSC碎片之以上測試的結果： —1- n' I n m ^^1 n ^^1 *^1 l^i I n I n 1 1^1 v^i-1--口 1 m ^^1 n n n· I (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -13- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 461045 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（η ) 測試# m 參考 雷射處理的l〇[w] 雷射處理的15[w] 最大 平均 最大 平均 最大 平均 1 1 116 52 77 35 43 25 1 2 59 45 50 29 65 27 1 3 116 56 65 34 53 35 1 4 92 52 54 32 56 37 1 5 106 50 52 27 82 45 每個晶圓的平均 97.8 51 59.6 31.4 59.8 33.8 2 1 39 23 88 41 2 2 60 30 60 31 2 3 57 37 42 20 .2 4 47 29 60 45 2 5 54 38 52 34 每個晶圓的平均 51.4 31.4 60.4 34.2 3 1 39 21 60 25 3 2 50 27 57 37 3 3 56 31 60 33 3 4 75 45 52 32 3 5 52 31 49 27 每個晶圓的平均 54.4 31 55.6 30.8 平均 97.8 51 55.1 31.2 58.6 32.9 標準差 23.8 4 10.9 6 12.5 7.4 · -14- 表2 (請先閱讀背面之注意事項再填寫本頁) '裝--------訂---------線. 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 481045This wafer was analyzed under a microscope to determine the amount of BSC resulting from the dicing operation. Table 2 illustrates the results of the above tests of this BSC fragment: —1- n 'I nm ^^ 1 n ^^ 1 * ^ 1 l ^ i I n I n 1 1 ^ 1 v ^ i-1--port 1 m ^^ 1 nnn · I (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -13- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ) A7 461045 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (η) Test # m Refer to the laser treatment l0 [w] Laser treatment 15 [w] Maximum average Maximum average Maximum average 1 1 116 52 77 35 43 25 1 2 59 45 50 29 65 27 1 3 116 56 65 34 53 35 1 4 92 52 54 32 56 37 1 5 106 50 52 27 82 45 Average per wafer 97.8 51 59.6 31.4 59.8 33.8 2 1 39 23 88 41 2 2 60 30 60 31 2 3 57 37 42 20 .2 4 47 29 60 45 2 5 54 38 52 34 Average per wafer 51.4 31.4 60.4 34.2 3 1 39 21 60 25 3 2 50 27 57 37 3 3 56 31 60 33 3 4 75 45 52 32 3 5 52 31 49 27 Average per wafer 54.4 31 55.6 30.8 Average 97.8 51 55.1 31.2 58.6 32.9 Standard 23.8 4 10.9 6 12.5 7.4 · -14- Table 2 (Please read the precautions on the back before filling this page) 'Installation -------- Order --------- line. This paper size Applicable to China National Standard (CNS) A4 (210 X 297 mm) 481045
五、發明說明（I2 (請先閱讀背面之注意事項再填寫本頁) 如2中所不和説明於圖8-10中的，在此由c〇2雷射光束 處理之二晶圓群組上的Bsc結果相較於在未處理之晶圓（參 考阳圓）上的結果爲低。圖8是此參考晶圓的下視圖800。 圖9是用10瓦特雷射處理之晶圓的下視圖900，而圖1〇是 用15瓦特雷射處理之晶圓的下視圖1〇〇〇。 如圖8所7F ,此BSC最大是97 8卿（圖8中的8〇2 )和平均 51 μιη (圖8中的804 )。如圖9中所示，使用一 1〇瓦特c〇2雷 射以去除聚醯亞胺塗料改善此BSC結果至最大551哗（圖9 中的902 )和平均31，2脾（圖9中的904 )。此外，如圖1〇中所 不’使用一 15瓦特C〇2雷射以去除聚醯亞胺塗料改善此 BSC結果至最大58.6 μηι (圖1〇中的1〇〇2)和平均32 9叫^圖ι〇 中的1004 )。一方面，此結果在這些實驗中是可重複的， 像由對於每—群組之標準差的計算所見的，但另一方面， 此結果並不等於由在第二個實驗中之相同參數的使用所獲 得的結果。 整體來説，使用此範例的具體裝置達到的BSC改善是介 於大約在高於使用單—刀刀之常用方法所達到之結果的 40%和70%之間。 經濟部智慧財產局員工消費合作社印製 雖然具有特別额定功率的雷射説明於上，我們認爲較低 或較高功率的雷射可以如希望的被使用。例如，認爲具有 額足功率低到2瓦特的雷射可以用來達到降低的BSC。 此外，相反的，在切割前對此基板的整個表面刻線，認 爲當母一刻線形成時’一切塊据齒可以沿該刻線切割。然 後Ik後的刻線可以在橫跨此基板之表面的第—方向中依序 __-15- 本紙張尺i適用i國國豕標準（CNS〉A4規格（210 X 297公楚） —V. Description of the invention (I2 (please read the precautions on the back before filling in this page) As shown in Figure 8-10, the difference between the two is shown in Figure 8-10. The Bsc result above is lower than the result on the unprocessed wafer (reference sun circle). Figure 8 is a bottom view 800 of this reference wafer. Figure 9 is a bottom view of a wafer processed with a 10 watt laser View 900, while Figure 10 is a bottom view of a wafer processed with a 15 Watt laser 1000. As shown in Figure 7F in Figure 8, the maximum BSC is 97 8 (80 2 in Figure 8) and average 51 μιη (804 in Figure 8). As shown in Figure 9, using a 10 watt CO2 laser to remove the polyimide coating improves this BSC result to a maximum of 551 shots (902 in Figure 9) and the average 31.2 spleen (904 in Fig. 9). In addition, as shown in Fig. 10, using a 15 Watt CO2 laser to remove the polyimide coating improves the BSC result to a maximum of 58.6 μηι (Fig. 10). 1002) and average 329 is called 1004). On the one hand, this result is repeatable in these experiments, as seen by the calculation of the standard deviation for each group, but on the other hand, this result is not equivalent to the same parameters in the second experiment. Use the results obtained. Overall, the BSC improvement achieved using the specific device of this example is between about 40% and 70% higher than that achieved by the conventional method using a single-blade knife. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Although lasers with special power ratings are described above, we believe that lower or higher power lasers can be used as desired. For example, lasers with frontal power as low as 2 watts are thought to be used to achieve reduced BSC. In addition, on the contrary, before cutting, the entire surface of the substrate is scribed, and it is considered that when the mother scribe line is formed, all of the teeth can be cut along the scribe line. Then the engraved lines after Ik can be sequentially in the first direction across the surface of the substrate __- 15- This paper rule applies to the national standard (CNS> A4 specification (210 X 297)) —
4 G 04 A7 B7 五、發明說明（13 ) 的形成和切割，其後_類似的程序沿此基板的第二方向以 形成晶粒。 雖然本發明已經用參考範例之具體裝置來描述，其未對 此限制。相反地，隨附的申請專利範團應該被解釋包括其 他變形’和本發明的具體装置 J八菔取匮了以被那些技術上已熟練的 人在不偏離本發明之精神和範疇下完成。 --- .---------—/-裝--------tT---I-----線 (請先閱讀背面之注意事項再填寫本頁} 經濟部智慧財產局員工消費合作社印製 釐 一公一97 12 X 10 2 /IV 格 規 4 NS)A (c 準 標 家 國 國 中 用 適 度 尺一張 紙 本4 G 04 A7 B7 V. Formation and cutting of the description of the invention (13), followed by a similar procedure to form crystal grains along the second direction of the substrate. Although the present invention has been described with reference to a specific device of an example, it is not limited thereto. On the contrary, the accompanying patent application group should be interpreted to include other variants' and the specific device of the present invention, J Hachiman, to be completed by those skilled in the art without departing from the spirit and scope of the present invention. --- .---------— /-install -------- tT --- I ----- line (Please read the precautions on the back before filling this page} Economy Printed by the Intellectual Property Bureau of the Ministry of Intellectual Property, Consumer Cooperatives, 97, 12 X 10 2 / IV, 4 NS) A (c) Standard paper, a moderate size, a piece of paper