4 54 04 8 A7 B7 五、發明說明（1 ) 【發明所屬之技術領域】 先前，在真空處理室內之陰極安裝板狀靶標，藉沿著 該靶標背面移動磁鐵而移動從形成於該靶標表面之該磁鐵 之洩漏磁場，而將在適當陽極與該陰極之間所發生之放電 由該洩漏磁場拘束形成高密度之電漿領域，在對向於該靶 標設置之基板施加濺鍍成膜之磁控管濺鍍方法係爲人所知 曉。雖然該靶標之平面形狀爲隨意，但是一般爲矩形者， —般爲由該陰極從D C電源供給恒電力模態所控制之電力 〇 於此方法若固定該磁鐵之位置時，靶標之表面就被濺 鍍成不均勻，所以靶標之使用率變低變成高成本，又，若 該靶標面積變大時，固定之磁鐵時該表面就不容易得到均 勻之洩漏磁場，磁鐵也變成大型化致使製作變成困灘。爲 了消除這種不妥情形，提案有將該磁鐵沿著靶標背面移動 者。 V:· . 【發明所欲解決之問題】 經濟部智慧財產局員工消費合作杜印製 但是，若移動該磁鐵時，將靶標之投入電力控制成恒 電力時，由該磁鐵之移動位置致使放電電壓與電流就發生 變化，因其變化會改變電漿狀態，所以，形成於基板之膜 之質也同時改變，具有不能進行均質成膜之缺點。 本發明之目的係提供一種由於磁鐵之移動引起之放電 電壓之變化少之磁控管濺鍍方法與適合於實施之裝置。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）_4- 454 ❹4# A7 B7 五、發明說明（2 ) 【解決問題之手段】 ‘ (請先閱讀背面之注意事項再填寫本頁) 本發明係沿著設於陰極之板狀靶標背面移動磁鐵，由 該磁鐡在該靶標表面邊發生移動之磁控管放電用之洩漏磁 場對於該陰極投入一定放電電力將該靶標濺鍍之磁控管濺 鍍方法，將該磁鐵在其移動中因應磁控管放電之電壓增減 向該表面與垂直方向移動藉將放電電壓約略保持一定，來 達成上述目的。本發明之方法，於設在陰極之板狀靶標背 面將沿磁鐵設成往復移動自如在該靶標表面形成移動自如 之磁控管放電用之洩漏磁場之磁控管濺鍍裝置，在該磁鐵 背後，對於該靶標表面對於垂直方向移動自如地設置可動 架，在該可動架保持該磁鐵沿著該背面使其往復移動之移 動裝置，就可適當地實施。此情形時，將可動架安裝於對 於該靶標表面向垂直方向延伸並且由電動機所迴轉之螺桿 ，將該電動機連接於因應在該靶標表面上所發生之磁控管 放電之放電電壓之變動來控制該電動機之正逆迴轉之控制 器較佳，也可將該移動^置由設於該可動架之導螺桿與滑 動桿及迴轉該導螺桿之電動機所構成。 + 經濟部智慧財產局員工消費合作社印製 【發明之實施形態】 茲就本發明之實施形態參照圖面說明時，於第1圖至 第3圖，符號1係表示在真空處理室2之室壁垂直地安裝 之陰極，該陰極1係備有在角形之陰極殼（cathode case ) 3之單面安裝成氣密之襯墊板（packing plate ) 4與在該 襯墊板4表面接合之角形等靶標5連接於D C電源，沿著 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐〉 _ 5 - 4 54 〇4 S A7 B7 五、發明說明（3 ) 該靶標5背面移動自如地設有長板狀之永久磁鐵或電磁鐵 之磁鐵6。爲了將該磁鐵6沿著該靶標5背面移動，在該 陰極殼3背面且在該磁鐵6背後設有移動裝置7。 這種構成係與先行者相同，爲了將該基板濺鍍成膜若 從DC電源通電於該陰極1時，由形成於該靶標5表面側 所形成之該磁鐵6之洩漏磁場就封閉電漿而形成高密度電 漿領域，其領域爲隨著該磁鐵6之移動而移動該靶標5之 表面側，將該靶標5表面5 a均句地進行1磁控管濺鍍對於 與該靶標5對向之該真空處理室2內所裝設之基板2 2施 加成膜。該磁鐵6長度，通常爲形成爲較靶標5之濺鍍領 域更長，該磁鐵6之寬度爲形成爲該靶標5之濺鍍領域更 短，構成由所移動小之該磁鐵6將該靶標5之整個濺鍍領 域可由洩漏磁場加以掃描。 一般，從D C電源將被恒電力控制之電力供給於該陰 極1，先前係該磁鐵6從該靶標5 —端移至他端時在其移 動端其放電電壓變高，i其移動中之中間位置由於放電電 壓會變低所以帶來上述缺點，但是本發明係在其移軌中因 應磁控管放電電壓之增減將該磁鐵6對於該靶標5表面 5 a向垂直方向移動藉將其放電電壓維持在約略一定，來 消除上述缺點。 該磁鐵6之移動裝置7，係由插通設於該磁鐵6背後 所設之突面（boss ) 8之螺桿9，與使該螺桿9正反迴轉 之電動機1 0，友使該磁鐵6安定移動所用之導桿1 1所 構成，將這.些螺桿9，電動機1 0及導桿1 1搭載位於該 本紙張尺度適用中國國家標準（CNS)A4規格<210 X 297公釐）-6 - (請先閱讀背面之注意事項再填寫本頁) —------^---------^. 經濟部智慧財產局員工消費合作社印製 A7 B7 454 04 § 五、發明說明（4 ) 磁鐵6背後所設之可動架1 2。又，在該靶標5背面方向 並且對於該靶標5表面5 a將向垂直方向延伸之角軸型之 一對導桿1 3，1 3安裝於該陰極殼3，在各導桿1 3插 通設於該可動架1 2之滑動襯套（slide bush ) 1 4，1 4 將該可動架1 2向該表面5 a之垂直方向往復移動自如， 爲了將該可動架1 2向該垂直方向往復移動，在該可動架 12設置突面15並且在該突面15螺合對於與該陰極殼 3設成迴轉自如之導桿1 3相同.方向延伸之滾珠螺旋之螺 桿1 6，將搭載於該陰極殼3之電動機1 7之迴轉經由皮 帶18及帶輪19傳達於該螺桿16。藉此，若該電動機 1 7正反迴轉時螺桿1 6就正反迴轉，該可動架1 2就對 於該表面5a向垂直方向往復移動。 由該靶標5表面到該磁鐵6之距離洩漏磁場之大小發 生變化，雖然會對於磁控管濺鍍之放電電壓發生變化，但 是裝設在該磁鐵6之移動中檢測其放電電壓之檢測器2 0 ，將該檢測器2. 0連接k該電動機1 7之控制器2 1當放 電電壓亦即該檢測器2 0之檢測値較預定値爲大時就將該 可動架1 2及磁鐵6靠近於該表面5 a，若其檢測値較預 定値爲小時使其可從該表面5 a遠離迴轉該電動機1 7， 藉此在磁鐵6移動中能夠得到約略一定之放電電壓。 若恒電力投入於陰極1時，當該磁鐵6位於該靶標5 兩端部時放電電壓就上升，在其中間位置其放電電壓所以 會變低之理由，係由該陰極1所移動之洩漏磁場所圍住之 放電位置所.對向之電極（陽極）形狀爲對於洩漏磁場之移 本紙張尺度適用中國國家標準（CNS>A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) II I I I I 訂·！ - . 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 4 54 04 S A7 B7 五、發明說明（5 ) 動方向並非均句對稱所致，若所對向之電極爲接地電位時 ，係由於具有接地電位之電極面積會改變所致，但是本發 明係如上述將該磁鐵6在其移動中對於該表面5 a使其更 向垂直方向移動而將其放電電位保持爲一定者，藉此電漿 之狀態爲在磁鐵6之移動中約略變成一樣，即使靶標消粍 也可得到一樣之電漿在基板施加均質之成膜，防止異常放 電所以也可防止濺射（splash )或微粒之發生，可得到品 質良好之膜。 - 【實施例】 將鋁長度1 0 0 Omm，寬度8 0 Omm之靶標5安 裝於陰極1，將真空處理室2成爲0. 7 Pa之真空，對 於該陰極1連接控制爲3 3 Kw恒電力之D C放電電源， 將3 3 Kw恒電力投入於該陰極1。陽極爲接地電位之該 真空處理室2之室壁。磁鐵6係長度1 0 0 0mm，寬度 1 0 0mm之長條板狀i，位於該靶標5兩端部時從表面 5 a設定爲6 0mm距離，在該表面前方〇mm位置使其 可得到3 0 0高斯（gauss )之洩漏磁場。將該磁鐵6以單 程以2 . 5秒之速度由電動機1 〇往復移動，在準備於與 該靶標5所對向位置之基板成膜了鋁薄膜。當該磁鐵6位 於其開始移動端附近時放電電壓就變高，在其移動中之靶 標中間位置將檢測低的放電電壓，所以，此情形時，就如 第4圖之曲線A所示，在其移動中可動架1 2爲將該磁鐵 6移動成從表面5 a遠離5mm，靠近另一方端部時因放 • · . 本紙張尺度適用中國國家標準（CNS)A4規格<210 X 297公g ) ΓΤΙ ' (請先閱讀背面之注意事項再填寫本頁)4 54 04 8 A7 B7 V. Description of the invention (1) [Technical field to which the invention belongs] Previously, a plate-shaped target was installed in a cathode in a vacuum processing chamber, and a magnet formed along the back of the target was moved from the target formed on the surface of the target. The magnetic field leaks from the magnet, and the discharge occurring between the appropriate anode and the cathode is constrained by the leaked magnetic field to form a high-density plasma field. A magnetron that is sputtered into a film is applied to the substrate provided to the target. Tube sputtering methods are known. Although the planar shape of the target is arbitrary, it is generally rectangular, which is generally the power controlled by the cathode from the DC power supply constant power mode. In this method, if the position of the magnet is fixed, the surface of the target will be Sputtering becomes non-uniform, so the target usage rate becomes low and becomes high cost. Moreover, if the target area becomes larger, it will not be easy to obtain a uniform leakage magnetic field on the surface when the magnet is fixed. Sleepy beach. To eliminate this problem, it is proposed to move the magnet along the back of the target. V: ·. [Problems to be solved by the invention] Printed by the consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs, but when the magnet is moved, the target's input power is controlled to constant power, and the magnet's moving position causes discharge. The voltage and current change. Because the change will change the plasma state, the quality of the film formed on the substrate also changes at the same time, which has the disadvantage of not being able to form a homogeneous film. An object of the present invention is to provide a magnetron sputtering method with a small change in discharge voltage due to the movement of a magnet and a device suitable for implementation. This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) _4- 454 ❹4 # A7 B7 V. Description of the invention (2) [Methods to solve the problem] '(Please read the precautions on the back before filling (This page) The present invention involves moving a magnet along the back of a plate-shaped target provided on the cathode, and a leakage magnetic field for the magnetron discharge caused by the magnet to move on the surface of the target. A certain discharge power is input to the cathode to splash the target. The sputtering method of the plated magnetron, the magnet is moved to the surface and perpendicular to the surface in response to the voltage increase and decrease of the magnetron discharge during its movement, and the discharge voltage is kept approximately constant to achieve the above purpose. According to the method of the present invention, a magnetron sputtering device is provided on the back of a plate-shaped target provided on the cathode so as to reciprocate along the magnet to freely form a leaking magnetic field for the magnetron discharge on the surface of the target. A movable device can be provided for the target surface to move freely in the vertical direction, and a moving device for holding the magnet along the back surface to make it reciprocate in the movable frame can be appropriately implemented. In this case, the movable frame is mounted on a screw extending perpendicular to the surface of the target and rotated by a motor, and the motor is connected to a variation of the discharge voltage of the magnetron discharge occurring on the surface of the target to control The controller for the forward and reverse rotation of the motor is preferred, and the movement can also be composed of a lead screw and a sliding rod provided on the movable frame and a motor for rotating the lead screw. + Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs [Inventive Embodiments] The following describes the embodiments of the present invention with reference to the drawings. In Figs. 1 to 3, the symbol 1 indicates the room of the vacuum processing chamber 2. A cathode mounted vertically on the wall, the cathode 1 is provided with an angled packing plate 4 mounted on one side of an angled cathode case 3 and a corner plate joined to the surface of the packing plate 4 Wait for the target 5 to be connected to a DC power supply, and apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm> _ 5-4 54 〇4 S A7 B7 along the paper scale. V. Description of the invention (3) The back of the target 5 A long plate-shaped permanent magnet or an electromagnet magnet 6 is provided to move freely. In order to move the magnet 6 along the back of the target 5, a moving device 7 is provided on the back of the cathode case 3 and behind the magnet 6. The structure is the same as the previous one. In order to sputter the substrate into a film, if the cathode 1 is energized from a DC power supply, the leakage magnetic field of the magnet 6 formed on the surface side of the target 5 closes the plasma and forms a high plasma. The field of density plasma The surface side of the target 5 is moved by the movement of the magnet 6, and the surface 5a of the target 5 is uniformly magnetron sputtered. For the substrate 2 installed in the vacuum processing chamber 2 opposite to the target 5 2 is applied to form a film. The length of the magnet 6 is generally formed to be longer than the sputtering area of the target 5, and the width of the magnet 6 is shorter to form the sputtering area of the target 5. 6 The entire sputtering area of the target 5 can be scanned by the leaking magnetic field. Generally, the power controlled by the constant power is supplied from the DC power source to the cathode 1. When the magnet 6 was previously moved from the target 5 to the other end At its moving end, its discharge voltage becomes higher, and its intermediate position during movement will cause the above-mentioned disadvantages because the discharge voltage will become lower. However, the invention moves the magnet in response to the increase or decrease of the discharge voltage of the magnetron during its movement. 6 The surface 5 a of the target 5 is moved in the vertical direction to maintain the discharge voltage at about a certain level to eliminate the above disadvantages. The moving device 7 of the magnet 6 is formed by inserting a protruding surface provided behind the magnet 6. (Boss) 8 of the screw 9, and make the The rod 9 is rotated forward and backward by the electric motor 10, and the guide rod 11 used for the stable movement of the magnet 6 is composed of these screws 9, the electric motor 10 and the guide rod 11 which are located on the paper standard applicable to China Standard (CNS) A4 Specification < 210 X 297 mm) -6-(Please read the precautions on the back before filling this page) —------ ^ --------- ^. Economy Printed by A7 B7 454 04 of the Consumer Cooperatives of the Ministry of Intellectual Property Bureau § V. Description of the Invention (4) Movable frame 12 behind the magnet 6. Furthermore, a pair of guide rods 1 3, 1 3 of an angular axis type extending in the vertical direction with respect to the back surface of the target 5 and the surface 5 a of the target 5 are mounted on the cathode case 3 and inserted into each of the guide rods 13. A slide bush 1 4 provided on the movable frame 12 can move the movable frame 12 reciprocally in the vertical direction of the surface 5 a. In order to reciprocate the movable frame 12 in the vertical direction Moving, a protruding surface 15 is provided on the movable frame 12 and a screwing on the protruding surface 15 is the same as the guide rod 13 of the cathode casing 3 which is freely rotatable. A ball screw 16 extending in the direction will be mounted on the The rotation of the motor 17 of the cathode case 3 is transmitted to the screw 16 via a belt 18 and a pulley 19. Thus, if the screw 16 is rotated forward and backward when the motor 17 is rotated forward and backward, the movable frame 12 is reciprocated in a vertical direction with respect to the surface 5a. The magnitude of the leakage magnetic field from the surface of the target 5 to the magnet 6 changes. Although the discharge voltage of the magnetron sputtering will change, a detector 2 is installed to detect the discharge voltage of the magnet 6 during its movement. 0, connect the detector 2.0 to the controller 2 of the motor 1 7 1 When the discharge voltage, which is the detection of the detector 20, is larger than the predetermined value, move the movable frame 1 2 and the magnet 6 closer On the surface 5 a, if the detection time is smaller than a predetermined value, the motor 17 can be rotated away from the surface 5 a to thereby obtain a substantially constant discharge voltage during the movement of the magnet 6. If the constant power is input to the cathode 1, the discharge voltage rises when the magnet 6 is located at both ends of the target 5, and the reason why the discharge voltage is lower at the middle position is due to the leakage magnetism moved by the cathode 1. The discharge location surrounded by the place. The shape of the opposite electrode (anode) is the displacement of the leakage magnetic field. The paper size applies the Chinese national standard (CNS > A4 specification (210 X 297 mm)) (Please read the precautions on the back first) (Fill in this page) II IIII Order!-. Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Employees' Cooperatives of the Ministry of Economics and Intellectual Property Bureau printed by employees' cooperatives 4 54 04 S A7 B7 V. Description of invention (5) The direction of movement is not even Therefore, if the opposing electrode is at the ground potential, it is caused by the area of the electrode having the ground potential being changed, but the present invention is to move the magnet 6 toward the surface 5 a more in the movement as described above. Move the vertical direction to keep its discharge potential constant, so that the state of the plasma is approximately the same during the movement of the magnet 6, even if the target disappears, the same plasma can be obtained on the substrate Adding a homogeneous film to prevent abnormal discharges can also prevent the occurrence of splashes or particles, and a good film can be obtained.-[Example] Target 5 with an aluminum length of 100 mm and a width of 80 mm Installed on the cathode 1, the vacuum processing chamber 2 is set to a vacuum of 0.7 Pa, and the cathode 1 is connected to a DC discharge power source controlled by 3 3 Kw constant power, and 3 3 Kw constant power is put into the cathode 1. The anode is grounded The potential of the wall of the vacuum processing chamber 2. The magnet 6 is a long plate-shaped i with a length of 100 mm and a width of 100 mm. When it is located at both ends of the target 5, it is set to a distance of 60 mm from the surface 5 a. A position of 0 mm in front of the surface makes it possible to obtain a leakage field of 300 gauss. The magnet 6 is reciprocated by the motor 10 at a speed of 2.5 seconds in a single pass, and is ready to be aligned with the target 5 An aluminum film is formed on the substrate toward the position. The discharge voltage becomes high when the magnet 6 is located near the end where it starts to move, and a low discharge voltage will be detected in the middle position of the moving target. Therefore, in this case, it is like As shown by the curve A in Fig. 4, the movable frame 1 is in its movement. 2 is to move the magnet 6 away from the surface 5 a away from 5 mm, because it is placed near the other end • ·. This paper size applies to China National Standard (CNS) A4 specifications < 210 X 297g g) ΓΤΙ '(Please (Read the notes on the back before filling out this page)
4 S4 04 8 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（6 ) 電電壓會變高，再次靠近5mm於該表面5 a。此時，測 定此時之放電電壓與放電電流時，就變成曲線B及曲線C 所示’放電電壓之變化幅度最大爲3 2 V。形成於該基板 之膜質係均質，在3分鐘之成膜中沒有發生異常放電。 爲了比較，使該可動架1 2不能進行向垂直方向之動 作’將該磁鐵6固定於從該表面5 a離6 5mm之位置而 與上述相同條件將該磁鐵6單程2 . 5秒移動時，放電電 壓及放電電流係變成如第5圖之.曲線D及曲線E所示。放 電電壓之變化幅度最大爲8 Ο V，從這所得到之膜，基板 端部爲較中央部其粒子粗厚度也薄，無法得到均質之膜。 又，在3分鐘之成膜中發生了 3 1次之異常放電，在膜形 成濺射變成不良製品。 【發明效果】 ' 如以上，若依據本發明，邊移動磁鐵進行磁控管濺鍍 畤，由於在其移動中因i磁控管放電電壓之增減從靶標表 面向垂直方向移動將其放電電壓維持成.約略一定，所以在 其移動中以一定放電電壓可進行均質之濺鎪成長，即使靶 標消粍也可繼續進行均質之成膜，由於放電會安定所以也 可防止濺射等之發生具有提升生產力等之效果，因成爲申 請專利範圍第3項以下之構成就可簡單確實地實施本發明 之方法。 圖式之簡單說明· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-9 - -I I I I I I I «HI — — — — · - - (請先閱讀背面之注意事項再填寫本頁) ο 454048 A7 _B7_____ 五、發明說明（7 ) 第1圖係表示本發明之實施形態之正面圖。 第2圖係第1圖之2—2線部分之剖面圖。 第3圖係第1圖之要部斜視圖。 第4圖係依據本發明方法之磁鐵移動狀態與放電電壓 及放電電流之線圖。 第5圖係比較例之放電電壓與放電電流之線圖。 .【符號之說明】 · 、 1 陰極，2 真空處理室，5 靶標，5 a 表面 ，6，7 移動裝置，12 可動架，13 導桿，16 螺桿，17 電動機，20 檢測器，21 控制器，2 2 基板。 (請先閱讀背面之注意事項再填寫本頁) ---I----訂·111111! -^ . 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐）_ 1〇_4 S4 04 8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (6) The electrical voltage will become higher, approaching 5mm on the surface again for 5 years. At this time, when the discharge voltage and the discharge current are measured at this time, the variation range of the discharge voltage shown in the curve B and the curve C is 3 2 V at the maximum. The quality of the film formed on the substrate was homogeneous, and no abnormal discharge occurred during film formation in 3 minutes. For comparison, the movable frame 12 cannot be moved in the vertical direction. 'When the magnet 6 is fixed at a position 5 mm away from the surface 5 a and the magnet 6 is moved in one pass for 2.5 seconds under the same conditions as above, The discharge voltage and discharge current are as shown in the curve D and the curve E in FIG. 5. The maximum variation of the discharge voltage is 8 0 V. From the film obtained here, the end of the substrate is thinner than the central part, and the thickness of the particles is also thin. A homogeneous film cannot be obtained. In addition, an abnormal discharge occurred 31 times during the film formation in 3 minutes, and the film was sputtered to become a defective product. [Effects of the Invention] 'As mentioned above, if the magnetron is sputtered while moving the magnet according to the present invention, the discharge voltage of the magnetron is moved from the target surface to the vertical direction due to the increase or decrease of the discharge voltage of the i magnetron during its movement. It is maintained at a constant level. Therefore, it can perform homogeneous sputtering growth at a certain discharge voltage during its movement. Even if the target disappears, homogeneous film formation can be continued. Since the discharge is stable, it can also prevent the occurrence of sputtering, etc. The effect of improving productivity and the like can be implemented simply and surely by the constitution below the third item of the patent application scope. Brief description of drawings · This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -9--IIIIIII «HI — — — — ·--(Please read the notes on the back before filling in this (Page) ο 454048 A7 _B7_____ 5. Explanation of the invention (7) The first figure is a front view showing an embodiment of the present invention. Fig. 2 is a sectional view taken along line 2-2 of Fig. 1; Fig. 3 is a perspective view of the main part of Fig. 1; Fig. 4 is a line diagram of the moving state of the magnet and the discharge voltage and discharge current according to the method of the present invention. FIG. 5 is a line chart of a discharge voltage and a discharge current of a comparative example. [Description of Symbols] · 1 cathode, 2 vacuum processing chamber, 5 targets, 5 a surface, 6, 7 moving device, 12 movable frame, 13 guide rod, 16 screw, 17 motor, 20 detector, 21 controller , 2 2 substrate. (Please read the precautions on the back before filling this page) --- I ---- Order · 111111!-^. Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs, the paper size is applicable to Chinese National Standard (CNS) A4 (210x297 mm) _ 1〇_