TW451063B - Method for inspecting the reliability of testing probe - Google Patents

Method for inspecting the reliability of testing probe Download PDF

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Publication number
TW451063B
TW451063B TW88118642A TW88118642A TW451063B TW 451063 B TW451063 B TW 451063B TW 88118642 A TW88118642 A TW 88118642A TW 88118642 A TW88118642 A TW 88118642A TW 451063 B TW451063 B TW 451063B
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Taiwan
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probes
probe
group
item
scope
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TW88118642A
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Chinese (zh)
Inventor
Meng-Jin Tsai
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United Microelectronics Corp
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Abstract

This invention is about the method for inspecting the reliability of testing probe and is used in the testing apparatus that has plural probes. This method includes the following steps: dividing the probes into groups, in which each group includes plural probes; making these probes float; applying voltage to each group of probes in order to measure the resistance value of each probe, in which the remaining probes are grounded when a voltage is applied to one probe among the group of probes; comparing and checking the resistance value of each probe among each group of probes; preparing a testing wafer, in which the testing wafer is deposited with a thin film; making these probes contact this testing wafer; applying voltage to each group of probes in order to measure the contact resistance value of each probe; and comparing and checking the contact resistance value of each probe among each group of probes.

Description

A7 B7 451 06 3 5335twf.doc/〇〇6 五、發明說明(/ ) 本發明是有關於一種檢測方法’且特別是有關於一種檢 測測試探針可靠度的方法- 在完成晶片的製造程序後,需對晶片進行可靠度測試, 以確認晶片是否可以正常操作。一般進行可靠度測試係使 用具有多支探針的探針卡檢測晶圓上的各晶片,其檢測方 式爲將探針卡上的探針與晶圓上的晶片直接接觸,進行各 項測試。然而,在經過多次的操作後,探針因直接接觸晶 片的關係’容易發生變形,且製程中的各項殘餘物可能會 殘留於晶圓上’而污染探針,使探針沾上雜質或是短路, 影響到晶片測試的準確度。 第1圖係繪示習知探針發生沾黏雜質、短路及變形等問 題的不意圖。請參照第1圖’探針卡1〇上具有多條探針12a 12b, 12c,12d,12e ’其中探針12a狀況正常,沒有沾黏雜質 也沒有發生變形。探針12b上則沾黏有雜質i4a,而探針12c 與探針12d之間沾有雜質14b,其中雜質14a,14b爲氧化 物、光阻殘留物或是溶劑殘餘物。由於探針12c與探針12d 間沾有雜質14b,導致探針12c與探針12d間發生短路(shcm) 現象°探針12e則發生變形問題,使得進行測試時,探針 12e無法接觸到晶圓。 由於探針極爲細小,因此發生上述情形時並不容易得 知,且探針卡上的探針數目眾多,不易檢測出有問題的探 針,因而造成晶片測試上的誤差,導致錯誤測試結果的產 生。 . 本發明提供一種檢測測試探針可靠度的方法,用以同時 3 本紙張尺度適用中困國家標準(CNS)A4規格(210 X 297公爱) 'I ---------r—ο裝 ί锖先W讀背面之注意事項再填寫本頁) n n t— I f I k— i i I n I 4 經濟部智慧財產局負工消费合作社印製 經濟部智慧財產局貝工消t合作社印製 451063 5335twf.d〇c/〇〇6 五、發明說明(2) 檢測複數支探針,可檢測出個別探針是否發生短路問題、 ’沾黏雜質問題或是變形問題。 本發明提供一種檢測測試探針可靠度的方法,可個別檢 測出探針是否發生短路問題。 本發明提供一種檢測測試探針可靠度的方法,可個別檢 測出探針是否發生沾黏雜質問題或是變形問題。 根據本發明較佳實施例,本發明提供一種檢測測試探針 可靠度的方法,應用於檢測包括複數支探針的檢測裝置。 首先將該些探針分組,每組皆包括複數支探針,接著將探 針浮置。然後對每組探針施加電壓,其中當施加電壓於一 組探針中的一支探針時,需將其餘探針接地。測量各探針 電阻値並互相比對。接著準備鍍有薄膜的測試晶圓,將探 針與測試晶圓直接接觸。之後,施加電壓於各探針,測量 各探針的接觸電阻値並互相比對。 根據本發明較佳實施例,本發明提供一種檢測測試探針 可靠度的方法,應用於檢測探針的短路問題。首先將該些 探針分組,每組皆包括複數支探針,將探針浮置。然後對 每組探針施加電壓,其中當施加電壓於一組探針中的一支 探針時’需將其餘探針接地。測量各探針電阻値並互相比 iUtl ¥寸。 根據本發明較佳實施例,本發明提供一種檢測測試探針 可靠度的方法’應用於檢測探針沾黏雜質問題與變形問 題。首先將該些探針分組,每組皆包括複數支探針,接著 準備鍍有薄膜的測試晶圓,將探針與測試晶圓直接接觸。 4 本紙張尺度適用中S國家標準<CNS)A4規格(210 X 297公釐〉 (請先閲讀背面之注意事項再填寫本頁) cA7 B7 451 06 3 5335twf.doc / 〇〇6 V. Description of the invention (/) The present invention relates to a detection method ', and in particular to a method for detecting the reliability of a test probe-after the wafer manufacturing process is completed It is necessary to perform a reliability test on the wafer to confirm whether the wafer can operate normally. Generally, the reliability test uses a probe card with multiple probes to detect each wafer on the wafer. The detection method is to directly contact the probe on the probe card with the wafer on the wafer to perform various tests. However, after multiple operations, the probes are prone to deformation due to the direct contact with the wafers, and various residues in the process may remain on the wafers, contaminating the probes and contaminating the probes with impurities. Or a short circuit affects the accuracy of the wafer test. The first figure shows the intention of the conventional probe with sticking impurities, short circuit, and deformation. Please refer to FIG. 1 ', the probe card 10 has a plurality of probes 12a, 12b, 12c, 12d, and 12e. Among them, the probe 12a is in a normal condition, and there are no sticky impurities or deformation. The probe 12b is contaminated with an impurity i4a, and the probe 12c and the probe 12d are contaminated with an impurity 14b. The impurities 14a and 14b are oxides, photoresist residues, or solvent residues. Due to the impurity 14b between the probe 12c and the probe 12d, a short circuit (shcm) phenomenon occurs between the probe 12c and the probe 12d. The probe 12e is deformed, so that the probe 12e cannot contact the crystal during the test. circle. Because the probes are extremely small, it is not easy to know when the above situation occurs, and the number of probes on the probe card is large, and it is not easy to detect problematic probes, which causes errors in wafer testing and leads to incorrect test results. produce. The present invention provides a method for detecting the reliability of a test probe, which is applicable to 3 paper sizes applicable to the National Standard for Difficulties (CNS) A4 (210 X 297 public love) 'I --------- r —Ο 装 ί 锖 W read the notes on the back before filling out this page) nnt— I f I k— ii I n I 4 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives, printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Printed 451063 5335twf.doc / 〇〇6 5. Description of the invention (2) Detecting a plurality of probes can detect whether there is a short-circuit problem, a problem of sticking impurities or deformation of individual probes. The invention provides a method for detecting the reliability of a test probe, which can individually detect whether the probe has a short circuit problem. The invention provides a method for detecting the reliability of a test probe, which can individually detect whether the probe has problems of sticking impurities or deformation. According to a preferred embodiment of the present invention, the present invention provides a method for detecting the reliability of a test probe, which is applied to a detection device including a plurality of probes. The probes are first grouped, each group includes a plurality of probes, and the probes are then floated. Then apply a voltage to each set of probes. When applying a voltage to one of the probes, ground the remaining probes. Measure the resistance of each probe and compare them. A thin-film coated test wafer is then prepared and the probe is in direct contact with the test wafer. Then, a voltage was applied to each probe, and the contact resistance 値 of each probe was measured and compared with each other. According to a preferred embodiment of the present invention, the present invention provides a method for detecting the reliability of a test probe, which is applied to detect a short circuit problem of the probe. The probes are first grouped, each group includes a plurality of probes, and the probes are floated. Then, a voltage is applied to each group of probes, and when a voltage is applied to one of the probes', the remaining probes need to be grounded. Measure the resistance of each probe and compare them to each other. According to a preferred embodiment of the present invention, the present invention provides a method for detecting the reliability of a test probe, which is applied to the problem of sticking impurities and deformation of the probe. The probes are first grouped, each group includes a plurality of probes, and then a test wafer coated with a thin film is prepared, and the probes are directly contacted with the test wafer. 4 This paper size applies to the national S < CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) c

I I A7 B7 451063 5 3 3 5twf . doc / 0 06 五、發明說明(5) 之後,施加電壓於各探針,測量各探針的接觸電阻値並互 相比對。 爲讓本發明之上述目的'特徵和優點能更明顯易懂,下 文特舉較佳實施例’並配合所附圖式,作詳細說明如下: 圖式之簡單說明: 第1圖係繪示習知探針發生沾黏雜質、短路及變形等問 題的示意圖; 第2圖係繪示根據本發明一較佳實施例判斷探釺是否發 生短路問題的流程圖; 第3圖根據本發明另一較佳實施例判斷探針是否發生沾 黏雜質問題或是變形問題的流程圖;以及 第4圖係繪示根據本發明再一較佳實施例判斷探針是否 發生短路問題、沾黏雜質問題或是變形問題的流程圖。 圖式標號之簡單說明: 10 :探針卡 12a, 12b, 12c, 12d,12e :探針 14a,14b :雜質 實施例 第2圖係繪示根據本發明一較佳實施例判斷探針是否發 生短路問題的流程圖。請參照第2圖,在進行探針檢測前, 先將探針進行分組(步驟20),然後再分別對每組探針進行 檢測,以便測出每組中有問題的探針。 在本實施例中,係以總數12支探針爲例,每四支探針 分成一組,其分法如下:編號1-4,編號2_5,編號3_6,編 5 本紙張尺度適用中國囷家標準(CNS〉A4規格(210 X 297公着) I---—1----r — 裝*------II 訂 i· <請先閲讀背面之注$項再填寫本頁) 線、 經濟部暫慧財產局負工消费合作社印製 451063 五、發明說明(年) 號4-7,編號5-8,編號6-9,編號7-1〇,編號8_n,編號9- 12 °本實施例將相鄰四支探針歸爲—組,然而每組的探針 數目及分法係依實際的操作情形決定,並不以本實施例所 提方式爲限。 以檢測第1組探針爲例說明,將探針浮置(fl〇ating),施 加電壓於第一探針,並將其他探針接地,以測量第一探針 的電阻(如步驟22),然後依序使用相同方法測量其他探針 的電阻。由於探針浮置’每一探針皆處於開路(〇pen)狀態, 所以對每一探針皆會測得極大的電阻値。若是第三探針與 第四探針測到低電阻値,而第一探針與第二探針測到很高 的電阻値’則可確定第三探針與第四探針間發生短路現象 或是漏電流(leakage)現象(如步驟24)。 第3圖根據本發明另一較佳實施例判斷探針是否發生沾 黏雜質問題或是變形問題的流程圖。 請參照第3圖’將探針進行分組(如步驟3〇),以便測出 每組中有問題的探針,在此以上一實施例中的分組方式爲 例’每組的探針數目及分法係依實際的操作情形決定,並 不以此方式爲限。 接著’準備一測試晶圓,然後將探針接觸測試晶圓(如 步驟32),其中測試晶圓上鍍有薄膜,此薄膜的較佳材質 爲低電阻材質’如此才可判斷出不同的探針間接觸電阻差 異,其中較佳的低電阻材質爲鋁或是銅。 以檢測桌1組探針爲例說明,將探針接觸測試晶圓後, 施加電壓於每一支探針,以測量每一支探針的電阻(如步 6 本紙張尺度適用47國困家標準(CNS)A4規格(210x297公》〉 c請先閲讀背面之注$項再填寫本頁) dI I A7 B7 451063 5 3 3 5twf. Doc / 0 06 V. Description of the invention (5) After applying voltage to each probe, measure the contact resistance of each probe and compare them with each other. In order to make the above-mentioned object of the present invention 'characteristics and advantages more obvious and easy to understand, a preferred embodiment is given below in conjunction with the accompanying drawings, and the detailed description is as follows: A brief description of the drawings: FIG. 1 is an illustration The schematic diagram of the problems of sticking impurities, short circuit, and deformation of the probe; FIG. 2 is a flowchart for judging whether a short circuit problem occurs according to a preferred embodiment of the present invention; FIG. 3 is another comparison of the present invention. A flowchart of a preferred embodiment for determining whether a probe has a problem of sticking impurities or deformation; and FIG. 4 is a diagram illustrating whether a probe has a short circuit, a problem of sticking impurities, or Flow chart of the deformation problem. Brief description of the drawing numbers: 10: Probe cards 12a, 12b, 12c, 12d, 12e: Probes 14a, 14b: Examples of impurities. The second diagram is to show whether a probe is judged according to a preferred embodiment of the present invention. Flow chart of short circuit problem. Refer to Figure 2. Before performing probe detection, group the probes (step 20), and then test each group of probes separately to detect the problematic probes in each group. In this embodiment, a total of 12 probes are taken as an example, and each of the four probes is divided into a group. The division method is as follows: No. 1-4, No. 2_5, No. 3_6, No. 5 Standard (CNS> A4 specification (210 X 297)) I ---— 1 ---- r — Equipment * ------ II Order i · < Please read the note on the back before filling in this Page) Printed by the Ministry of Economic Affairs, temporary Hui Property Bureau, Off-line Consumer Cooperatives 451063 V. Description of Invention (Year) No. 4-7, No. 5-8, No. 6-9, No. 7-10, No. 8_n, No. 9 -12 ° In this embodiment, four adjacent probes are classified into a group. However, the number of probes and the division method of each group are determined according to the actual operating conditions, and are not limited to the methods mentioned in this embodiment. Taking the detection of the first group of probes as an example, float the probes, apply voltage to the first probes, and ground the other probes to measure the resistance of the first probes (such as step 22) , Then use the same method to sequentially measure the resistance of the other probes. Since the probe is floating, each probe is in an open state, so a very large resistance 値 is measured for each probe. If the third and fourth probes have low resistance 値, and the first and second probes have high resistance 値 ', it can be determined that a short circuit occurs between the third and fourth probes. Or leakage phenomenon (such as step 24). Fig. 3 is a flowchart for judging whether the probe has a problem of sticking impurities or deformation according to another preferred embodiment of the present invention. Please refer to Figure 3 'to group the probes (as in step 30) in order to detect the problematic probes in each group. The grouping method in the previous embodiment is taken as an example.' Number of probes in each group and The division system is determined according to the actual operation situation and is not limited in this way. Then 'prepare a test wafer, and then touch the probe to the test wafer (step 32), where the test wafer is coated with a thin film, and the preferred material for this film is a low-resistance material', so that different probes can be determined. The contact resistance between the pins is different. The preferred low resistance material is aluminum or copper. Take one set of probes on the test table as an example. After the probes are in contact with the test wafer, a voltage is applied to each probe to measure the resistance of each probe. Standard (CNS) A4 specification (210x297 male)> cPlease read the note on the back before filling in this page) d

I n ^aJ· >] 1 If n 1 1· I 經濟部智慧財產局員工消费合作杜印製 451 06 3 5335twf.d〇c/〇〇6 A7 -_ B7 五、發明說明($ ) 驟34) ’根據測得的電阻値,判斷探針的狀況。在探針狀 況正常的情形下,每一探針接觸測試晶圓,所以應會測得 極小的電阻値。若是第一探針測到極高的電阻値,則可判 斷出第一探針發生變形’因其無法接觸到測試晶圓,而形 成開路狀態。而若是第二探針的電阻値比第一探針、第三 探針及第四探針略商或是不穩定’則表示第二探針上沾有 雜質’導致第二探針接觸電阻異常。 上述兩實施例分別檢測探針的短路問題及變形與沾黏雜 質問題’然而兩種方法亦可整合爲一次流程,將上述的各 種問題一次檢測出來,其流程如第4圖所示。 請參照第4圖,首先進行探針分組(如步驟4〇),其分組 方式依實際操作情形決定,在此以第一實施例的分組方式 爲例’每四支探針分爲一組。接著,將探針浮置(如步驟42), 施加電壓於第一探針,且將第二探針、第三探針與第四探 針接地,測量第一探針的電阻,然後依序測量其他探針的 電阻値(如步驟44),根據測得的各探針電阻値判斷探針間 是否發生短路問題(如步驟46)。 之後,準備測試晶圓(如步驟48),測試晶圓鍍有薄膜比 如是鋁金屬薄膜或是銅金屬薄膜。使探針接觸測試晶圓(如 步驟50) ’並施加電壓於探針,測量各探針的電阻値(如步 驟52)。根據測得的電阻値判斷探針是否發生變形或是探 針上是否有沾黏雜質(如步驟54)。 在本發明中,提供檢測測試探針可靠度的方法,用以同 時檢測複數支探針,可檢測出個別的探針是否發生短路問 7 本紙張尺度適用中困國家標準(CNS)A4規格(210 X 297公釐 ------]o (請先Μ讀背面之注項再填寫本頁) 訂---------線 σ 經濟部智慧財產局具工消费合作杜印製 45106 3 5335twf.d〇c/006 A7 ___ B7 五、發明說明(ώ) 題、沾黏雜質問題或是變形問題。其方法係將探針進行分 組,分別對每組探針施加電壓,經由各探針電阻値的比較’ 可以個別地檢測出發生短路問題的探針。另外準備鍍有低 電阻材質薄膜的測試晶圓,可以檢測出有沾黏雜質或是發 生變形的探針。 雖然本發明已以較佳實施例揭露如上,然其並非用以限 疋本發明,任何熟習此技藝者,在不脫離本發明之精神和 範圍內,當可作各種之更動與潤飾,因此本發明之保護範 圍當視後附之申請專利範圍所界定者爲準。 IT- — -裝 -------訂-----_ — 線 (請先《讀背面之注意事項再填寫本頁> 經濟部智慧財產局負工消费合作杜印製 適 度 張 紙 本 公 97 2 X ο 21 格 規 A4 s) N (c ί 標I n ^ aJ · >] 1 If n 1 1 · I Consumption cooperation of employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Du printed 451 06 3 5335twf.d〇c / 〇〇6 A7 -_ B7 V. Description of the invention ($) 34) 'Judge the condition of the probe based on the measured resistance 値. Under normal probe conditions, each probe is in contact with the test wafer, so very small resistance 値 should be measured. If the first probe detects an extremely high resistance, it can be judged that the first probe is deformed 'because it cannot contact the test wafer, and an open circuit state is formed. If the resistance of the second probe is slightly quotient or unstable than that of the first probe, the third probe, and the fourth probe, it means that there is an impurity on the second probe, causing the contact resistance of the second probe to be abnormal. . The two embodiments described above respectively detect the short-circuit problem and the deformation and adhesion problems of the probe '. However, the two methods can also be integrated into a single process, and the above-mentioned various problems can be detected at one time. The process is shown in FIG. 4. Please refer to FIG. 4, first perform probe grouping (such as step 40). The grouping method is determined according to the actual operation situation. Here, the grouping method of the first embodiment is taken as an example. Each four probes are divided into a group. Next, float the probe (step 42), apply a voltage to the first probe, and ground the second, third, and fourth probes, measure the resistance of the first probe, and then sequentially Measure the resistance 其他 of other probes (such as step 44), and determine whether a short circuit occurs between the probes based on the measured resistance 各 of each probe (such as step 46). After that, prepare a test wafer (step 48). The test wafer is coated with a thin film such as an aluminum metal film or a copper metal film. The probe is brought into contact with the test wafer (step 50) and a voltage is applied to the probe, and the resistance of each probe is measured (step 52). According to the measured resistance, determine if the probe is deformed or if there are sticky impurities on the probe (such as step 54). In the present invention, a method for detecting the reliability of a test probe is provided to detect a plurality of probes at the same time, and it is possible to detect whether an individual probe has a short-circuit. Q7 This paper standard is applicable to the National Standards (CNS) A4 specification ( 210 X 297 mm ------] o (please read the note on the back before filling this page) Order --------- line 4545 3 5335twf.d〇c / 006 A7 ___ B7 V. Description of the invention (free), sticking impurities or deformation. The method is to group the probes, apply voltage to each group of probes separately, Comparison of the resistance of each probe 値 It is possible to individually detect a probe that has a short-circuit problem. In addition, a test wafer coated with a low-resistance material film is prepared to detect probes that are sticky or deformed. Although this The invention has been disclosed as above with a preferred embodiment, but it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. The scope of protection should be attached to the scope of patent application The definition shall prevail. IT- — -install ------- order -----_ — line (please read the precautions on the back before filling out this page > off-consumer co-operation of the intellectual property bureau of the Ministry of Economic Affairs Du printed moderately printed paper 97 2 X ο 21 Standard A4 s) N (c ί

Claims (1)

3 ^ 6 Μ nJ I ο / A8B8C8D8 經濟部智慧財產局員工消费合作社印製 六、申請專利範圍 1. 一種檢測測試探針可靠度的方法,應用於一具有複數 支探針的測試裝置,其包括下列步驟: 進行探針分組,其中每一組皆包括複數支探針; 將該些探針浮置; 對每一組探針施加電壓’以測量每一探針的電阻値,其 中施加電壓於一組探針中的一探針時,將該組中的其餘探 針接地; 比對每一組探針中的每一探針電阻値; 準備一測試晶圓’其中該測試晶圓上鑛有一薄膜; 將該些探針接觸該測試晶圓; 對每一組探針施加電壓,以測量每一探針的接觸電阻 値;以及 比對每一組探針中的每一探針接觸電阻値。 2. 如申請專利範圍第i項所述之方法,其中該薄膜材質 爲低電阻材質。 3. 如申請專利範圍第丨項所述之方法,其中該薄膜爲一 鋁金屬薄膜。 4. 如申請專利範圍第丨項所述之方法,其中該薄膜爲一 銅金屬薄膜。 5. —·種檢測測試探針可靠度的方法’應用於檢測探針的 短路問題,其包括下列步驟: 進行探針分組,其中每一組皆具有複數支探針: 對母一組探針施加電壓,以測量每一探針的電阻値;以 I I--:----1--J--------訂-!! (請先Μ讀背面之注意事項再填寫本頁) 線 ο. 本紙張尺度適用中國國家標準(CNS)A4規格<210 297公釐) A8B8C8D8 經濟部智慧財產局員工消費合作社印製 、申請專利範圍 比對每一組探針中的每一探針電阻値。 6. 如申請專利範圍第5項所述之方法,對探針施加電壓 前,先將探針浮置。 7. 如申請專利範圍第5項所述之方法,其中施加電壓於 該組探針中的一探針時,將該組中的其餘探針接地。 8. —種檢測測試探針可靠度的方法,應用於檢測探針沾 黏雜質問題與變形問題,其包括下列步驟: 進行探針分組,其中每一組皆具有複數支探針: 準備一測試晶圓; 將該些探針接觸該測試晶圓; 對每一組探針施加電壓,以測量每一探針的接觸電阻 値;以及 比對每一組探針中的每一探針接觸電阻値。 9. 如申請專利範圍第8項所述之方法,其中該測試晶圓 上鍍有一薄膜。 10. 如申請專利範圍第9項所述之方法,其中該薄膜材 質爲低電阻材質。 11. 如申請專利範圍第9項所述之方法,其中該薄膜爲 一鋁金屬薄膜。 12. 如申請專利範圍第9項所述之方法,其中該薄膜爲 一銅金屬薄膜。 -------- I II —i I-----丨—1 — (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS>A4規格(210 * 297公釐)3 ^ 6 Μ nJ I ο / A8B8C8D8 Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 6. Application for patent scope 1. A method for detecting the reliability of a test probe, which is applied to a test device with a plurality of probes, which includes The following steps are performed: grouping probes, each of which includes a plurality of probes; floating the probes; applying voltage to each group of probes to measure the resistance of each probe, where the voltage is applied to When a probe in a set of probes is grounded, the remaining probes in the set are grounded; the resistance of each probe in each set of probes is compared; 测试 a test wafer is prepared; A thin film; contacting the probes with the test wafer; applying a voltage to each set of probes to measure the contact resistance of each probe; and comparing the contact resistance of each probe in each set of probes value. 2. The method as described in item i of the scope of patent application, wherein the film material is a low-resistance material. 3. The method according to item 丨 of the patent application scope, wherein the film is an aluminum metal film. 4. The method according to item 丨 of the patent application scope, wherein the film is a copper metal film. 5. — · A Method for Testing the Reliability of Test Probes' Applied to detecting the short-circuit problem of probes, which includes the following steps: Group the probes, each of which has a plurality of probes: A set of mother probes Apply a voltage to measure the resistance of each probe 値; I I--: ---- 1--J -------- order-!! (Please read the precautions on the back before filling (This page) Line ο. This paper size applies to Chinese National Standard (CNS) A4 specifications < 210 297 mm) A8B8C8D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and applying for a patent comparison of each probe in each group A probe resistor 値. 6. According to the method described in item 5 of the patent application scope, float the probe before applying voltage to the probe. 7. The method according to item 5 of the scope of patent application, wherein when a voltage is applied to one of the probes in the group, the remaining probes in the group are grounded. 8. —A method for testing the reliability of a test probe, which is used to detect the problem of sticking impurities and deformation of the probe, which includes the following steps: Group the probes, each of which has a plurality of probes: Prepare a test Wafer; contacting the probes with the test wafer; applying a voltage to each group of probes to measure the contact resistance of each probe; and comparing the contact resistance of each probe in each group of probes value. 9. The method according to item 8 of the scope of patent application, wherein the test wafer is plated with a thin film. 10. The method according to item 9 of the scope of patent application, wherein the film material is a low-resistance material. 11. The method according to item 9 of the scope of patent application, wherein the film is an aluminum metal film. 12. The method according to item 9 of the scope of patent application, wherein the film is a copper metal film. -------- I II —i I ----- 丨 —1 — (Please read the precautions on the back before filling out this page) This paper size applies to Chinese national standards (CNS > A4 specifications (210 * 297 mm)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417551B (en) * 2006-08-22 2013-12-01 Formfactor Inc Probes card assembly

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417551B (en) * 2006-08-22 2013-12-01 Formfactor Inc Probes card assembly

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