447225 A7 B7 五、發明說明（1 ) 本申請案係為1999.6.2申請之第09/324526號美國專利 申請案的部份後續申請案，而該案係為1999.3.15提出之 第09/268243號美國專利申請案及1998.6.8提出之第 09/093416號美國專利申請案的部份後續申請案，且該第 09/093416號申請案則為第08/854507號申請案現已成為第 5763930號美國專利案的部份後續申請案本發明係有關 於高能光子源，特別是關於高度可靠的X射線及高能紫外 光源。 半導體產業乃持續發展蝕印技術，其可印製比以往更 小的積體電路規格。該等系統必須具有高可靠性，低廉有 效的產出，及合理的處理裕度。積體電路製造業目前乃正 由汞的G線（436nm)及I線（365nm)曝光光源改變成248nm及 193nm的準雷射光源6此種轉變係為具有最少焦點源度損 失之較高的光蝕刻解析度所急迫需求者。 積體電路產業的需求將很快超過193nm曝光光源的解 析度能力，因此形成對一波長更低於193nm之可靠的曝光 光源之需求。一準分子射線存在於157nm，但在此波長具 有足夠的透射率及高光學品質的光學材料乃難以獲得。因 此’全反射的鏡像系統乃可能被需求。一全反射的光學系 統比透射系統需要較小的數值孔徑（NA)。因該較小的NA 所造成的解析度損失僅能以一大因數減少波長來補償《因 此’假使光蝕印之解析度要被改良至超過以193nm或丨57nm 所達成者，則乃需要在1 〇nm範圍内的光源^ 在高能紫外線與X射線光源領域之目前狀況，係利用 本紙張尺度適用中國國家標準（CNS>A4規格（210 x 297公爱） <請先閱11背面之注意事項再填寫本頁} 裝----- - -- 訂— ' 經濟部智慧財產局員工消費合作杜印製 4 經濟郃智慧財產局員工消費合作社印裒 A7 --------B7 _ 五、發明說明（2 ) 以田射光束、電子或其它微粒來轟擊各種不同的靶材料所 產生的電漿。固體的靶已曾被使用’但該固體之靶熔銷所 造成的殘屑’對欲使用於生產線操作之系統的各種構件會 有知害作用。一種對此殘屑問題之解決方法係使用冷凍液 體或冷凍氣體標靶，而使殘屑不會鍍在該光學設備上。但 是’該等系統無一已被證明可實用於生產線操作。 多年以來早已公知X射線及高能紫外線輻射係可在一 電漿束縮操作中產生。在一電漿縮束中，一電流會以數種 可Sb型態之一來通過電漿，因此由該流動的電流所造成之 磁場，會將該電漿中的電子與離子以充分的能量加速進入 一極小體積’致使外部電子由該等離子剝離，而產生X射 線及向能紫外線輻射。各種可由聚焦或東縮電漿來產生高 能輻射的習知技術乃被揭述於下列專利中： J. M. Dawson之“X射產生器”，美國專利第396U97 號 1976.6.1。 T_ G，Roberts等人之‘‘強而有力之電子束輔助的X射 線產生器’美國專利第396 96 28號，1976.7.13。 J. H. Lee之“内擺線式縮東裝置”美國專利第 4042848號，1977,8.16。 L. Cartz等人之“雷射光束電漿縮東X射線系統”美 國專利第 4504964 號，1985.3.12。 A. Weiss等人之“電漿縮東X射線裝置”美國專利第 4536884號· 1985_8·20 = S. Iwamatsu之“X射線源’*美國專利第4538291號， 本誓、張尺度適用宁a國家標準（CNS)A4規格（210 χ 29? 复） I n I n tf n I n j 1 i n i 一δ* * —1 I— I 1 al n I (請先5?1|背面之注意事項再填莴本頁) 經濟部智慧財產局員工消費合作社印ΙΪ 447225 A7 ___B7__ 五、發明說明（3 ) 1985.8.27 〇 G. Herziger及W. Neff之“可在X光區中產生具有高輕 射強度之電漿源的裝置“美國專利第4596030號， 1986.6.17。 A. Weiss等人之“X光蝕印系統”美國專利第461 8971 號，1986.10.21 « A_ Weiss等人之“電漿束縮X射線方法”美國專利第 4633492號，1986.12.30。 I. Okada，Y· Saitoh之“X射線源及X光姓印方法”美 國專利第 4635282 號，1987.1.6 « R. P. Gupta等人之“多真空電弧生成之電漿縮束X射 線源”美國專利第4751723號，1988.6.14 > R. P. Gupta等人之“氣體放電生成的環狀電漿縮束X 射線源”美國專利第4752946號，丨988.6.2 1 = J. C_ Riordan，L S. Peariman之“與一 X射線源一起使 用之過濾裝置”美國專利第4837794號，1989.6.6。 W, Neff等人之‘‘產生具有一電漿源之X輻射的裝置” 美國專利第5023 897號，1991.6.11。 D. A. Hammer, D, H. Kalantar之“使用 X縮束 X射線源 之微蝕印的方法與裝置”美國專利第5102776號，1992.4.7 〇 M. W. McGeoch之“電漿X射線源”美國專利第 5504795號，1996.4.2 » G. Schriever等人之“作為光電子頻譜之窄頻帶延伸 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 6 <請先|»讀背面之注4事項再填寫本頁) -裝---- 訂---------線 經;»部智慧財產局員工消費合作社印製 A： ____B7 五、發明說明（4 ) 的紫外線輻射源之雷射產生的鋰電漿’’’^^^11^0113^5· V〇1.37. No.7, pp. 1243-1248. 1998.3. » R. Lebert等人之“供EUV蝕印之以氣體放電為基礎的 輕射源 “Int· Conf.於Micro and Nano Engineering. 1998,9. o W. Partlo, I, Fomenkov. D. Birx,之“使用一密集電衆 聚焦裝置之EUV(13.5nm)光的形成” ，SPIE Proc.於 Emerging Lithographic Technologies ΠΙ . Vol. 3676, pp. 846-858. 1999.3.= W. T. Silfast等人之“供EUV蝕印之在13·5ηηι與 11.4nm的高能電漿釋放源“ SPIE Proc.於Emerging Lithographic Technologies ΙΠ , Vol 3676, pp. 272-275. 1999,3.。 F. Wu等人之“真空火花放電及球狀束縮的χ光/ EUV點光源” ’ SHE Proc。於 Emerging Lithographic 丁echnologies ΙΠ_ Vol 3676. pp. 410-420, 1999.3。 I· Fomenkov· W. Partlo. D. Birx之“以密極電装焦點 及理之放射為基礎的13.5nm EUV蝕印之論述，，Sematch447225 A7 B7 V. Description of the Invention (1) This application is a partial follow-up to US Patent Application No. 09/324526, filed on 1999.6.2, and this case is No. 09/268243, filed on March 15, 1999 US patent application No. 09 and some subsequent applications of US patent application No. 09/093416 filed on 1998.6.8, and this application No. 09/093416 is application No. 08/854507 and has now become No. 5763930 The present invention relates to high-energy photon sources, and in particular to highly reliable X-ray and high-energy ultraviolet light sources. The semiconductor industry continues to develop etching technology that can print smaller integrated circuit specifications than ever before. Such systems must have high reliability, low cost and effective output, and reasonable processing margins. The integrated circuit manufacturing industry is currently changing the mercury G-line (436nm) and I-line (365nm) exposure light sources to 248nm and 193nm quasi-laser light sources.6 This transformation is relatively high with minimal loss of focus source Those in urgent need of photoetching resolution. The demand of the integrated circuit industry will soon exceed the resolution capability of the 193nm exposure light source, so the demand for a reliable exposure light source with a wavelength below 193nm is formed. An excimer ray exists at 157 nm, but optical materials with sufficient transmittance and high optical quality at this wavelength are difficult to obtain. Therefore, a 'total reflection mirror system' may be required. A total reflection optical system requires a smaller numerical aperture (NA) than a transmission system. The resolution loss caused by this smaller NA can only be compensated by reducing the wavelength by a large factor. "So 'if the resolution of photolithography is to be improved beyond that achieved at 193nm or 57nm, it is necessary to Light sources in the range of 10 nm ^ The current situation in the field of high-energy ultraviolet and X-ray light sources is based on the paper standard applicable to the Chinese national standard (CNS > A4 size (210 x 297 public love) < please read the note on the back of 11 first Please fill in this page again for the matter} Install -------Order-'Stamping and Printing of Employees' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 4 Printing of Economic and Intellectual Property Bureau's Employees' Cooperative Cooperative Seal A7 -------- B7 _ V. Description of the invention (2) Plasma produced by bombarding various target materials with field beams, electrons or other particles. Solid targets have been used already, but residues caused by fusion of the solid target 'It has a detrimental effect on the various components of the system intended to be used in the production line operation. One solution to this problem is to use frozen liquid or frozen gas targets so that the debris is not plated on the optical equipment. But 'none of these systems Proven to be used in production line operations. It has been known for many years that X-ray and high-energy ultraviolet radiation can be generated in a plasma beam shrinking operation. In a plasma beam shrinking, a current will be in one of several Sb-types To pass through the plasma, so the magnetic field caused by the flowing current will accelerate the electrons and ions in the plasma into a very small volume with sufficient energy, causing external electrons to be stripped from the ions, generating X-rays and Ultraviolet radiation. Various conventional technologies that can generate high-energy radiation by focusing or shrinking plasma are disclosed in the following patents: "X-ray generator" by JM Dawson, US Patent No. 396U97 No. 1976.6.1. T_G "Roberts et al.," Strong Electron Beam Assisted X-Ray Generator ", US Patent No. 396 96 28, 1976.7.13. JH Lee," Echoidal Retractor, "US Patent No. 4042848, 1977, 8.16. "Laser Beam Plasma X-ray System" by L. Cartz et al., U.S. Patent No. 4,504,964, 1985.3.12. A. Weiss et al. 4536 No. 884 · 1985_8 · 20 = "X-ray source 'by S. Iwamatsu * US Patent No. 4538291, the oath and the scale are applicable to the National Standard (CNS) A4 specification (210 χ 29? Complex) I n I n tf n I nj 1 ini One δ * * —1 I— I 1 al n I (please note 5? 1 | Notes on the back before filling out the lettuce page) Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Ϊ 447 447225 A7 ___B7__ 5. Description of the invention (3) 1985.8.27 〇G. Herziger and W. Neff, "A device capable of generating a plasma source with a high light emission intensity in the X-ray region", US Patent No. 4596030, 1986.6.17. A. Weiss et al., "X-Ray Etching System" US Patent No. 461 8971, 1986.10.21 «A_ Weiss et al.," Plasma Beam Reduction X-Ray Method "US Patent No. 4633492, 1986.12.30. I. Okada, Y. Saitoh, "X-ray source and X-ray surname method", US Patent No. 4,635,282, 1987.1.6 «RP Gupta et al.," Multi-Vacuum Arc Generated Plasma Condensation X-ray Source "US Patent No. 4751723, 1988.6.14 > RP Gupta et al. "Circular Plasma Condensation X-Ray Source Generated by Gas Discharge" US Patent No. 4752946, 988.6.2 1 = J. C. Riordan, L. Peariman "Filtering Device for Use with an X-Ray Source" US Patent No. 4,837,794, June 1989. W, Neff, et al. "A device for generating X-radiation with a plasma source" U.S. Patent No. 5023 897, 1991.6.11. DA Hammer, D, H. Kalantar, "Using X-Ray Reduced X-Ray Source Etching method and device "US Patent No. 5102776, 1992.4.7 MW McGeoch" plasma X-ray source "US Patent No. 5,504,795, 1996.4.2» G. Schriever et al. "Narrow Band as Photoelectron Spectrum Extend the paper size to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 6 < Please first read the 4 notes on the back before filling out this page) -Installation ---- Order ----- ---- Xian Jing; »Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau A: ____B7 V. Lithium Plasma from Laser of Ultraviolet Radiation Source of Invention Description (4) '' '^^^ 11 ^ 0113 ^ 5 · V〇1.37. No.7, pp. 1243-1248. 1998.3. »R. Lebert et al." Light emission source based on gas discharge for EUV etching "Int. Conf. In Micro and Nano Engineering. 1998 , 9. W. Partlo, I, Fomenkov. D. Birx, "The Formation of EUV (13.5nm) Light Using a Dense Electric Focusing Device", SPIE Proc. In Emergi ng Lithographic Technologies II. Vol. 3676, pp. 846-858. 1999.3. = WT Silfast et al. "High Energy Plasma Release Source for EUV Etching at 13.5ηη and 11.4nm" SPIE Proc. at Emerging Lithographic Technologies III, Vol 3676, pp. 272-275. 1999, 3. F. Wu et al. "X-Light / EUV Point Light Source for Vacuum Spark Discharge and Spherical Beam Reduction" ’SHE Proc. In Emerging Lithographic Dingchnologies ΙΠ_ Vol 3676. pp. 410-420, 1999.3. I. Fomenkov, W. Partlo. D. Birx, "Discussion of 13.5nm EUV Etching Based on Focal Density Focus and Emissions," Sematch
International Workshop on EUV Lithography, 1999 1〇。 典型的電裝聚焦裝置能產生大量的輻射，可用於近似 X光的蝕印，但會受限於重複率，因為每一脈衝所需的電 能較大，及内部構件的使用壽命較短，該系統所需储備的 電能範圍為IkJ至100kJ。而其重複率—般不會超過每秒數 個脈衝。 太纸張尺度過用申國國家標单<CNS)A4規格（2】0 X 297公釐） ------1---!-裝--------訂------ 線 <請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 447225 A7 ____B7__ 五、發明說明（5 ) 因此乃須要一種生產線可靠的簡單系統，以產生高能 紫外光及X光輻射，其可在高重複率操作，並避免習知技 術因形成殘屑所帶來的問題。International Workshop on EUV Lithography, 1999 1〇. A typical Denso focusing device can generate a large amount of radiation, which can be used for etching similar to X-rays, but it will be limited by the repetition rate, because the power required for each pulse is large, and the life of the internal components is short. The range of electrical energy required by the system is IkJ to 100kJ. And its repetition rate-generally does not exceed several pulses per second. Too large-scale paper used the national standard of Shen Guo < CNS) A4 specification (2) 0 X 297 mm) ------ 1 ---!-Packing -------- order-- ---- Line < Please read the precautions on the back before filling out this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Employee Consumption Cooperative, 447225 A7 ____B7__ V. Description of Invention (5) Therefore, a simple and reliable production line system is required to Generates high-energy ultraviolet and X-ray radiation, which can be operated at high repetition rates, and avoids the problems caused by the formation of debris in conventional techniques.
本發明係在提供一種高能光子源。有一對電漿束縮電 極係設在一真空室中。該室含有一作用氣體其包括一惰性 緩和氣體及一活性氣體被選來提供一所需的先譜線。一脈 衝電源會提供電脈衝，其電壓高到足以在該等電極之間造 成放電，俾在該作用氣體中產生非常高溫高濃度的電漿縮 束’該氣體會提供在該活性氣體光譜線的輻射。有一爆吹 屏蔽體設在剛好超過該高濃度縮束的位置而提供一實體隔 栅’可限制該縮束之軸向延伸。有一小孔設於該爆吹屏蔽 體中，可容該輻射而非該電漿穿過該屏蔽體*在—較佳實 施例中’該屏蔽體面向電漿之一表面係為圓拱狀D 於較佳實施例中’有一外反射輻射收集導引器會收集 電漿縮東中所產生的輻射’並將之導至所需的方向。亦在 較佳實施例中，該活性氣體係為鋰蒸氣，而緩和氣體為氦 ’且該輻射收集器係由一種具有高擦掠入射反射率之材料 所製成或塗以該材料。該反射材料之良好選擇為鉬、纪、 釕、姥、金或鎢。 在其它實施例中’該緩和氣體為氬，而理氣體係藉蒸 發固態或液態的鋰來產生，其係設於一同轴電極構造之沿 著中央電極轴心的孔内。在較佳實施例中，殘屑會被收集 於一錐狀疊接的殘屑收集器上，其表面係校準於由該縮束 位置延伸出來而被導向該輻射收集導引器的先線。該等 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐〉 I —I — I I I I I I H ·1111111 ·1111!11 , <請先閱讀背面之注意Ϋ項再填寫本I ) 經濟部智慧时產局員工消費合作社印數 A： B7 五、發明說明（6 ) 狀疊合的殘屑收集器與輻射收集導引器係被持在約4〇〇 =c 的溫度範圍，此係高於鋰的熔點，而低於鎢的熔點。該鶴 及涯的蒸氣皆會收集於該殘屑收集器上，但鋰會由該殘屑 收集器及收集導引器上蒸發掉’而該鎢將會永久保留在該 殘屬收集器上，因此不會集存於該輻射收集導引器上而使 其反射率變差。該等反射輻射的收集導引器及錐狀疊接的 殘肩收集器乃可被製設在一起形如一構件，或其亦可為分 開的構件而互相與縮束位置校準。 一獨特的腔室窗乃可被置設^其係被設計成可透射 EUV光而反射較低能量的光包括可見光。該窗最好係為— 小直徑的窗而由極薄的村料所製成，例如石夕、錯、皱。 申請人等於此揭述一由申請人與其同夥工作者所構建 之达’集電漿聚焦（DPF>的原型裝置，作為一使用全固態 脈衝電源電源驅動的極端紫外光（EUV)蝕印之光源。利用 由真二光栅分光儀所得之結果結合以一碎光電二極體所 測侍之結果，申請人等乃已發現在該M〇/si鏡之反射頻帶 中實際的輻射量，係可使用雙重離子化的鋰之丨35nm放 射線來產生。該原型DPF會將每脈衝25J的储存電能轉變 為大約0.76.1之在Π.5nm頻帶的輻射而放射於4冗球面角度 。此裝置之脈衝重複率性能乃已被研究至其1)(：電源供應 極限為200Hz。高至此重複率尚無發現每一脈衝之EUV輸 出有顯著的降低=在2〇〇Ηζ時，所測得的脈衝之間的能量 L定度為σ= 6%，且設有發現減降的脈衝。該原型的DpF 衣置之電路與操作，將會被以一些用來改善穩定度、效率The present invention is to provide a high-energy photon source. A pair of plasma beam shrinking electrodes are arranged in a vacuum chamber. The chamber contains a reactive gas that includes an inert moderating gas and an active gas that are selected to provide a desired leading line. A pulsed power supply will provide electrical pulses whose voltage is high enough to cause a discharge between the electrodes, generating a very high temperature and high concentration plasma shrinkage in the working gas. The gas will provide radiation. A blow shield is provided at a position just beyond the high-concentration shrinkage to provide a solid barrier 'to limit the axial extension of the shrinkage. A small hole is provided in the blow-shielding body to allow the radiation to pass through the shield instead of the plasma. * In a preferred embodiment, 'the surface of the shield facing the plasma is dome-shaped D In a preferred embodiment, 'an external reflected radiation collection guide will collect the radiation generated by the plasma shrinking east' and direct it to the desired direction. Also in a preferred embodiment, the active gas system is lithium vapor, and the moderating gas is helium ', and the radiation collector is made of or coated with a material having a high grazing incidence reflectance. Good choices of the reflective material are molybdenum, Krypton, ruthenium, osmium, gold or tungsten. In other embodiments, the moderating gas is argon, and the gas-regulating system is generated by evaporating solid or liquid lithium, which is arranged in a hole of a coaxial electrode structure along the axis of the central electrode. In a preferred embodiment, the debris is collected on a cone-shaped debris collector, the surface of which is aligned at the front of the radiation collection guide extending from the reduced beam position. These paper sizes are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) I —I — IIIIIIH · 1111111 · 1111! 11, < Please read the note on the back before filling in this I) Ministry of Economy Wisdom time production bureau employee consumer cooperatives impression A: B7 V. Description of the invention (6) The debris collector and radiation collection guide superimposed on each other are maintained at a temperature range of about 400 = c, which is high. The melting point of lithium is lower than the melting point of tungsten. Both the crane and the vapour will be collected on the debris collector, but lithium will evaporate from the debris collector and the collection guide, and the tungsten will remain on the residual collector permanently. Therefore, it does not accumulate on the radiation collection guide and deteriorates its reflectivity. These reflected radiation collection guides and cone-shaped overlapping shoulder collectors can be made together to form a component, or they can be separate components and calibrated to each other with the beam-reduction position. A unique chamber window can be placed ^ It is designed to transmit EUV light and reflect lower energy light including visible light. The window is preferably a small-diameter window made of extremely thin village materials, such as Shi Xi, Zhuo, Wrinkled. The applicant is equal to this disclosure of a prototype plasma collector focusing (DPF) device constructed by the applicant and his associates as a light source for extreme ultraviolet (EUV) etching using an all-solid-state pulsed power supply. .Using the results obtained by the true two-grating spectrometer combined with the results measured by a broken photodiode, the applicant and others have found that the actual amount of radiation in the reflection band of the M0 / si mirror can be doubled. The ionized lithium is generated by 35nm radiation. The prototype DPF will convert 25J of stored electrical energy per pulse into about 0.76.1 radiation in the Π.5nm frequency band and radiate it at 4 redundant spherical angles. The pulse repetition rate of this device The performance has been studied to its 1) (: The power supply limit is 200Hz. At this high repetition rate, no significant decrease in the EUV output per pulse has been found = at 200 Ηζ, between the measured pulses The energy L is fixed at σ = 6%, and there is a pulse to detect the decrease. The circuit and operation of the prototype DpF garment will be used to improve the stability and efficiency.
冬蛛Λ (cnsmV 規格（210 >·' 297公爱） — II! ^ - —ί I (請先J«讀背面之注意事瑣再填寫本頁) -ΪΒ . -線 447225 A7 B7 五、發明說明（ 及性能的較佳修正例之說明來呈現。 本發明乃提供一種在_可靠的、高亮度EUV光源中之 EUV蝕印實用裝置’該光源之放射特性乃十分匹配於M〇/Si 或Mo/Be鏡系統的反射頻帶。由於所推薦之全反射guy姓 印工具為隙縫掃描式系統，故本發明提供具有高重複率能 力的EUV光源β 圖式之簡單說明 第1围係表示本發明一較佳實施例的高能光子源。 第2圖為一具有碟狀電極的三維電漿東縮裝置。 第3圖為本發明之第三較佳實施例。 第4囷為本發明一較佳實施例之電路困β 第5Α圏為發明人及其夥伴工作者所構建之一原型單 元s 第5B圖為一剖視圖示出該具有火花塞預先電離器之 原型裝置的電極。 第5B1〜5B6圏係表示電漿縮束之形成。 第5C圖為一附設有爆吹屏蔽體之電極區域的剖視圖 第5C1〜5C6圖係表示設有該爆吹屏蔽體時該電漿縮 束的形成。 第ό圓係為該原型單元所產生的脈衝波形。 第7圖表示由一拋物面收集器所產生的部份guv光束 〇 第8圖示出13.5nm之鋰波峄與MoSi塗層之反射率的相 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公;* ) (請先Mtft背面之;i意事項再填寫本頁) -裝！ - ---訂---！1·線 經濟部智慧財產局員工消費合作社印製 10 AT B7 五 ^濟部智慧財產局員工消費合作社印*·^ 、發明說明（ 對關係。 第9圖表示一疊接的錐狀殘屑收集器。 第10圏示出一薄鈹窗供反射可見光而透射EUV光。 第11圖之表係示出對13.5nm紫外線輻射之各種不同 材料的反射率。 、第一較佳實施例〕 —焉能量的紫外光源之簡化圖式乃示於第丨圖中。其 主要構件係為一電漿束縮單元2，一高能光子收集器4及一 中空光管6。該電漿東縮源乃包含一同轴電極8,係由一低 私感脈衝電源電路丨0充能。在本較佳實施例之該脈衝電源 電路係為—高壓、高能效率的電路，而能以1000Hz的頻 率對同軸電極8提供ikV至2kV範圍内的脈衝大約5微秒。 少量的作用氣體，例如氦與鋰蒸氣的混合物，乃存在 於靠近如第1圖所示之電極8的基部。在每次高壓脈衝時， 於同軸電極8的内外電極之間，會由於預先電離或自體崩 #而發生突崩潰》該突崩過程係產生於該緩和氣體而電離 該氣體’並在該等電極的基部於電極之間造成一導電的電 漿。一旦存有導電的電漿，則電流會在内外電極之間流通 。於此較佳實施例中’其内電柽係為高正電壓而外電極則 在接地電位。電流會從内電極流向外電極，因此電子會流 向中央，而正離子會由中央流出。此電流會產生一個磁場 作用於移動的帶電荷者上，而使它們加速離開該同軸電極 8的基部。 當該電漿到達中央電極的末端，則該電漿上的電力與 . '丨 - . -奉紙張&度過用中國國家標準（CNSM4規格（2KU 297公釐 --------------裝--------訂·--------線 ί靖先閱硪背面之注意事項再填寫本！} 11 447225 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（9 ) 磁力’會將電漿東縮成一“焦點”圍繞一點1丨，該點係沿 該中央電柽的中心線並距其末端一小距離，且該電漿的温 度及壓力會快速升高而達到一極高溫度，在某些狀況下甚 至比太陽表面的溫度更高。該等電極的尺寸與電路中的總 電能’係最好可在該電漿中產生所需的黑體溫度。為產生 13nm範圍的輻射’乃需要超過20-100eV的黑體溫度。通 常’就一特定的同轴構造’其溫度會隨電脈衝之電壓升高 而增加。該放射點的形狀在轴向係有點不規則，而在徑向 則略呈高斯型線。該光源的典型徑向尺寸為3〇〇微米，而 其長度約為4mm。 在大部份被載述於技術文獻中的習知電漿束縮單元， 其放射點會以十分接近黑體的光譜在所有的方向發出輻射 。在作用氣體中之鋰的目的係為使該放射點的輻射光譜窄 化。 〔經蒸氣〕 雙重電離的鋰在13.5nm會顯現電子移轉，而形如在 緩和氦氣中的放射源原子。雙電離的鋰因有兩個理由而成 為一絕佳的選擇。其一係為鋰之低溶點與高蒸氣壓。由該 放射點發射的鋰，乃可藉簡單地將壁面加溫至〗8〇°c以上 ，而得避免電鍍在該腔室之壁與收集裝置上。氣態的鋰嗣 可與氣的緩和氣體被使用標準的渦輪分子泵吸技術抽出該 腔至。而只需將該二氣想冷知，經即可很容易地與氦分開 〇 塗層材料能在13.5nm有效地提供良好的反射。第8圖 本紙張尺度適用中國固家標準（CNS)A4規格⑵〇x297公楚1 12 {請先Mi»背面之注恚事項再填寫本頁) 裝--------訂---------線 經溃郁智慧財產局員工消費合作社印製 A： B7__ 五、發明說明（10 ) 乃示出鋰的放射波峯相對於公知的MoSi反射率之關係。 使用鋰作為光源原子的第三優點係，未離子化的鋰對 13.5nm之輻射具有一低吸收載面。而且，由該放射點發 射的任何離子化之鋰’皆可很容易地以一適當的電場來清 除。所剩下之未離子化的短對13 · 5 nm波長的輻射係幾乎 為透明的。目前最普遍於13nm範圍之光源係使用氙的雷 射磨削冷凍噴射。該等系統必須在下一脈衝之前捕捉幾乎 全部放射的氙，因為氙在13nm的吸收載面較大。 〔輻射收集器〕 在該放射點所產生的輻射會均勻地射入一全部的4;r 球面角。某些形式的收集裝置乃需捕捉此等輻射，並將之 導向餘印工具。先前所述的13nm光源所建議之收集裝置 係為使用多層介電質塗敷的鏡子。使用多層式介電鏡乃可 在一大角度範圍達到高收集效率。任何會產生殘餘物的放 射源皆塗有這些介電鏡，而會使其反射率減降，因此會減 少由該光源所收集到的輸出光。此所提供之系統將會遭到 電極腐蝕’而時常使被設在該放射點附近的任何介電鏡效 能減低。 某些材料對13.5nm的紫外光在很小的擦掠入射角可 具有rfj反射率。某些该寻材料之圖表乃示於第1】圖中。優 良的選擇包括鉬、姥、及鎢。該收集器乃可由這些材料製 成’但宋好匕們係被如_塗層敷設在一例如錄的基礎結構 材料上。其錐狀部乃可藉將鎳電鍍於—可卸除的心轴上來 備製。 本紙張及度埚用中國國家標箪（CNS)A4規格（2J0 X 297公爱） 13 ----i 11 ---— If * I I 111 — I *11 — I---- (請先Balt背面之;i惠事項再填寫本頁) 447225 經濟部智慧財產局員工消費合作社印*'1衣 A7 _ ΒΓ - 1 --------- 五、發明說明（11 ) 為製成一能接收一大圓錐角度的收集器，數個錐狀部 乃可被相互疊接在一起。每一錐狀部皆可利用一次以上的 轄射反射，來使該轄射錐雜再被導向所需方向。將該收集 操作設計成最接近擦掠入射’將可造成一最能容忍腐蝕電 極材料澱積的收集器。諸如此等鏡之擦掠入射反射率係非 常地有賴該鏡的表面粗度而定。當該入射角接近擦掠入射 時’對表面粗度的依賴會降低。吾人估計乃可收集及導引 被放射超過至少25度立體角度的13mn輻射。所提供之可 將輻射導入光管的收集器乃示於第1、2、3圖中。 〔鎢電極-收集器之鎢塗層〕 一種用來為外反射收集器選擇材料的較佳方法係，該 收集器上的塗層材料相同於電極材料。鎮係為一較佳的選 擇，因為其具有作為電極之典範性能，而其在13nm的實 際折射率為0.945。使用相同材料來作電極及鏡塗層，能 在其腐蝕的電極材料鍍著於該等收集鏡時，儘量減少鏡之 反射率的衰減。 〔銀電極與塗層〕 銀亦為該等電極與塗層之一甚佳的選擇，因為其在 13run亦具有低折射率，並具有高熱導性可容許更高的操 作重複率。 〔錐狀疊接的殘餘物收集器〕 在另一較佳實施例中，該收集導引器係被一殘屬收集 器所保護以免表面受蒸發的電極材料污染，該殘肩收集器 會在鎢蒸氣能到達該收集導引器4之前將其全部收集。第9 本紙張尺朗中國國家標準（CNS)A4規格⑵〇 x 297公釐） 14 ------------ I J 裝------—訂---I I----線 <請先M讀背面之注意事項再填寫本頁> r A： 經-部智慧財產局員工消費合作钍印絜 — 1 Bt 1 — - -- — --五 '發明說明（12 ) 圖示出一錐狀疊接的殘屑收集器5,其可收集因電漿束縮 所造成的殘屑。殘屑收集器5係由疊接的錐狀部所組成， 其表面係與由束縮位置中心延伸出來而被導向該收集導引 器4的光線校準。 被收集的殘屑乃包括由該鎢電極蒸發的鎢及被蒸發的 鋰。該殘屑收集器係被附裝於該輻射收集導引器4或為其 之一部份。該二收集器皆由鍍鎳基板所組成。該輻射收集 導引器部份4乃被塗覆鉬或鍺，以得甚高的折射率。最好 該二收集器係被加熱至约4〇〇t，此乃實質上高於鋰的熔 點，而低於鎢的熔點》鋰及鎢的蒸氣兩者皆會集中於該殘 屑收集器5的表面上，但鋰會被蒸發掉並擴及集中於該收 集導引器4上的鋰，其亦將會被很快地蒸發掉。鎢一旦被 收集於該殘屑收集器5上，則會放遠留在該處。 第7圖示出申請人所設計之—收集器的光學特徵。該 收集器係由五個疊接的掠擦入射拋物面反射鏡所組成，但 只有其中三個示出於該圖中。而二個内反射鏡未示出。在 此°又a十中其收集角度係約為0.4球面角度。如前所述該收 集器表面會被塗層並加熱以避免鋰的戰積。該設計會產生 平行光束。其匕的較佳設计諸如第丨、3、1 〇圖所示者則會 將光束聚焦。忒收集器將會被以在13.5nm波長範圍有較 高的擦掠入射反射率之材开斗來錄。兩肖該等材料係為鈀 和釕ϋ 〔光營〕 使殿積材料遠離該蝕印工具的照明裝置乃是拫重要的 太纸張又度適用中固國家標準（CNS)A4規袼（21〇 χ 297公釐）Winter Spider Λ (cnsmV specifications (210 > · '297 public love) — II! ^-— Ί I (please first read the cautionary matter on the back before filling in this page) -ΪΒ. -Line 447225 A7 B7 V. The invention description (and a description of a better modified example of performance is presented. The present invention provides a practical device for EUV etching in a reliable, high-brightness EUV light source. The radiation characteristics of the light source are well matched to Mo / Si Or the reflection frequency band of the Mo / Be mirror system. Since the recommended total reflection guy name printing tool is a slot-scanning system, the present invention provides an EUV light source with a high repetition rate capability. A high-energy photon source according to a preferred embodiment of the present invention. FIG. 2 is a three-dimensional plasma eastward shrinking device with a dish-like electrode. FIG. 3 is a third preferred embodiment of the present invention. The circuit of the preferred embodiment β 5A 圏 is a prototype unit constructed by the inventors and their workers. Figure 5B is a sectional view showing the electrodes of the prototype device with a spark plug pre-ionizer. 5B1 ~ 5B6 圏Figure 5C shows the formation of plasma beam shrinking. Figure 5C is an attachment Cross-sectional view of the electrode area with a blow-shield. Figures 5C1 to 5C6 show the formation of the plasma shrinkage when the blow-shield is provided. The circle is the pulse waveform generated by the prototype unit. Figure 7 Shows a part of the guv beam produced by a parabolic collector. Figure 8 shows the relative reflectivity of the lithium wave at 13.5nm and the MoSi coating. The paper size applies the Chinese National Standard (CNS) A4 (210 X 297 cm). ; *) (Please fill in the first page of the Mtft with the i-notes before filling out this page) -Install!---- Order ---! 1 · Printed by the Intellectual Property Bureau Staff Consumer Cooperative of the Ministry of Economic Affairs 10 AT B7 Printed by the Intellectual Property Bureau's Consumer Cooperative Cooperative Association, and the description of the invention (pair relationship. Figure 9 shows a stack of conical debris collectors. Figure 10) shows a thin beryllium window for reflecting visible light and transmitting EUV light. The table in FIG. 11 shows the reflectance of various materials with 13.5nm ultraviolet radiation. The first preferred embodiment]-A simplified diagram of an ultraviolet light source with tritium energy is shown in the figure. Its main components are Is a plasma beam shrinking unit 2, a high-energy photon collector 4 and a hollow light pipe 6 The plasma eastward source contains a coaxial electrode 8, which is charged by a low-private-pulse power circuit. In the preferred embodiment, the pulse power circuit is a high-voltage, high-energy-efficiency circuit, and A pulse in the range of ikV to 2kV can be provided to the coaxial electrode 8 at a frequency of 1000 Hz for about 5 microseconds. A small amount of working gas, such as a mixture of helium and lithium vapor, exists near the base of the electrode 8 as shown in Fig. 1 During each high-voltage pulse, a sudden collapse occurs between the inner and outer electrodes of the coaxial electrode 8 due to pre-ionization or self-collapse. The burst process is generated by the relaxation gas and ionizes the gas. The base of the equal electrode creates a conductive plasma between the electrodes. Once a conductive plasma is stored, current will flow between the internal and external electrodes. In this preferred embodiment, the internal voltage is high positive voltage and the external electrode is at ground potential. The current flows from the inner electrode to the outer electrode, so the electrons flow to the center, and the positive ions flow from the center. This current generates a magnetic field that acts on the moving charged persons, causing them to accelerate away from the base of the coaxial electrode 8. When the plasma reaches the end of the central electrode, the electric power on the plasma and. '丨-. -Feng paper & to pass the Chinese national standard (CNSM4 specification (2KU 297 mm -------- ------ Equipment -------- Order · -------- Online, please read the precautions on the back of the book before filling in this book!} 11 447225 Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Print A7 B7 V. Description of the invention (9) The magnetic force will shrink the plasma to a "focus" around a point 1 丨, this point is along the center line of the central electrode and a small distance from its end, and the electrode The temperature and pressure of the plasma will rise rapidly to an extremely high temperature, and in some cases even higher than the temperature of the sun's surface. The size of these electrodes and the total electrical energy in the circuit is preferably in the plasma. In order to generate radiation in the 13nm range, a blackbody temperature of more than 20-100eV is required. Usually, for a specific coaxial structure, the temperature will increase as the voltage of the electrical pulse increases. The radiation The shape of the dots is a bit irregular in the axial system and slightly Gaussian in the radial direction. The typical radial size of this light source is 3 〇micron, and its length is about 4mm. In most of the conventional plasma beam shrinking units described in the technical literature, its radiation point will emit radiation in all directions with a spectrum very close to the black body. The purpose of lithium in lithium is to narrow the radiation spectrum of the radiation point. [Vaporized] Double ionized lithium will exhibit electron transfer at 13.5nm, and will be like a source atom in moderating helium. Double ionized Lithium is an excellent choice for two reasons. One is the low melting point and high vapor pressure of lithium. The lithium emitted by this emission point can simply warm the wall surface to 80 ° c above, to avoid electroplating on the wall of the chamber and the collection device. Gaseous lithium plutonium and gas can be eased by using the standard turbo molecular pumping technology to extract the cavity to it. It is easy to know that it can be easily separated from helium after passing through. The coating material can effectively provide good reflection at 13.5nm. Figure 8 This paper size is applicable to China Solid Standard (CNS) A4 specification 〇 × 297 公 楚 1 12 {Please note on the back of Mi »before filling out this page) -------- Order --------- Printed by the Consumer Consumption Cooperative of the Suiyu Intellectual Property Bureau A: B7__ 5. Description of the Invention (10) It shows that the emission peak of lithium is relative to the known The relationship between MoSi reflectance. The third advantage of using lithium as the light source atom is that the non-ionized lithium has a low absorption surface for 13.5nm radiation. Moreover, any ionized lithium emitted from the radiation point is It can be easily removed with an appropriate electric field. The remaining unionized short-pair radiation system with a wavelength of 13.5 nm is almost transparent. At present, the most commonly used light source in the 13nm range is a laser mill using xenon. Shaved frozen spray. Such systems must capture almost all of the emitted xenon before the next pulse, because xenon has a larger absorption carrier at 13 nm. [Radiation Collector] The radiation generated at the radiation point will evenly enter a full 4; r spherical angle. Some forms of collection devices need to capture this radiation and direct it to the afterprint tool. The previously proposed collection device for the 13 nm light source is a mirror coated with a multi-layer dielectric. The use of multilayer dielectric microscopes can achieve high collection efficiency over a wide range of angles. Any radiation source that produces residue is coated with these dielectric mirrors, which will reduce their reflectivity and therefore reduce the output light collected by the light source. The system provided here will be subject to electrode corrosion ', often reducing the performance of any dielectric mirrors located near the radiation point. Certain materials may have rfj reflectance to 13.5nm UV light at very small grazing incidence angles. Some graphs of this material are shown in Figure 1]. Good choices include molybdenum, rhenium, and tungsten. The collector can be made of these materials, but the Song Haojins are laid on a basic structural material such as a coating. The tapered portion can be prepared by plating nickel on a removable mandrel. The paper and the pot are made in China National Standard (CNS) A4 (2J0 X 297 public love) 13 ---- i 11 ---— If * II 111 — I * 11 — I ---- (please first Balt on the back; please fill in this page again for benefits.) 447225 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs * '1 clothing A7 _ ΒΓ-1 --------- 5. The invention description (11) is made A collector capable of receiving a large conical angle, several cones can be superimposed on each other. Each cone-shaped part can use more than one reflected reflection, so that the guided radiation cone can be directed to the desired direction. Designing this collection operation closest to the grazing incidence ' will result in a collector that is most tolerant of the deposition of corrosive electrode materials. The grazing incidence reflectance of such mirrors depends very much on the surface roughness of the mirror. When this angle of incidence is close to the grazing incidence ', the dependence on the surface roughness decreases. We estimate that we can collect and guide 13mn radiation that is radiated at a solid angle of at least 25 degrees. The provided collectors that can direct radiation into the light pipe are shown in Figures 1, 2, and 3. [Tungsten Coating of Tungsten Electrode-Collector] A preferred method for selecting materials for the external reflection collector is that the coating material on the collector is the same as the electrode material. The town system is a better choice because it has exemplary performance as an electrode and its actual refractive index at 13nm is 0.945. The same material is used as the electrode and mirror coating, which can minimize the attenuation of the reflectance of the mirror when the corroded electrode material is plated on these collecting mirrors. [Silver electrodes and coatings] Silver is also a very good choice for these electrodes and coatings because it also has a low refractive index at 13run and has a high thermal conductivity that allows higher operating repetition rates. [Cone-shaped overlapped residue collector] In another preferred embodiment, the collection guide is protected by a residual collector to prevent the surface from being contaminated by evaporated electrode material. The tungsten vapor can be collected in its entirety before reaching the collection guide 4. The 9th paper ruler Chinese National Standard (CNS) A4 Specification ⑵〇x 297 mm) 14 ------------ IJ Pack ------------ Order --- I I- --- line < Please read the notes on the back before filling in this page > r A: Consumer Co-operation of Employees of the Ministry of Economics and Intellectual Property, 钍 印 絜 — 1 Bt 1 —--— --- Five 'Invention Description (12) A cone-shaped debris collector 5 is shown, which can collect debris caused by the shrinkage of the plasma beam. The debris collector 5 is composed of overlapping cone-shaped portions, and its surface is aligned with the light that is extended from the center of the beam-retraction position and guided to the collection guide 4. The collected debris includes tungsten evaporated by the tungsten electrode and lithium evaporated. The debris collector is attached to or part of the radiation collection guide 4. Both collectors consist of a nickel-plated substrate. The radiation collection guide portion 4 is coated with molybdenum or germanium to obtain an extremely high refractive index. Preferably, the two collectors are heated to about 400t, which is substantially higher than the melting point of lithium, and lower than the melting point of tungsten. Both the lithium and tungsten vapors will be concentrated in the debris collector 5 However, lithium will be evaporated and spread to the lithium concentrated on the collection guide 4, which will also be evaporated quickly. Once tungsten is collected on the debris collector 5, it is left there far away. Figure 7 shows the optical characteristics of the collector designed by the applicant. The collector consists of five superimposed grazing incident parabolic mirrors, but only three of them are shown in the figure. The two internal mirrors are not shown. In this case, the collection angle is about 0.4 spherical angle. As mentioned earlier, the surface of the collector is coated and heated to avoid accumulation of lithium. This design produces a parallel beam. Its preferred design, such as those shown in Figures 1, 3, and 10, will focus the beam. The tritium collector will be recorded with a material that has a high grazing incidence reflectance in the 13.5nm wavelength range. The materials of the two Xiaos are palladium and ruthenium. [Light camp] The lighting device that keeps the Dianji material away from the etching tool is an important paper that is also applicable to the China National Standard (CNS) A4 regulation (21 〇χ 297 mm)
--------------裝·！ ί請先閱讀背面之注意事項再填莴本頁) 訂， --線- 15 經-部智慧財產局員工消費合作社印製 447225 A7 ----------- 五、發明說明（I3 ) °因此’有一光管6乃被提供來更確保此等隔離。該光管6 係為一中空光管，其在内部表面上亦基本上利用全外反射 。初步的故集裝置乃可被設計成減少所收集之輻射的錐角 ’以配合該中空光管的接收角度。此概念乃示於第1圖中 〇 嗣該#印工具之介電鏡將可被非當良好地保護隔離電 極殘屑’因為鎢、銀或鋰原子將必須對抗在該中空光管下 方之一緩和氣體流才能向上游擴散，如第1囷所示。 [脈衝電源、單元〕 所提供之脈衝電源單元1〇係為一固態的高頻、高壓脈 衝電源單元’其係使用一固態觸發器及一磁性開關電路， 例如在第5142166號美國專利案中所揭的脈衝電源單元。 該等單元係非常可靠且能連續操作而可經多個月及數十億 次的脈衝不必太大維修。該第5142166號美國專利案的内 容乃併此附送》 第4圖示出一提供脈衝電源之簡化的電子電路。一較 佳實施例包括DC電源供應器40，其係為一種使用於準分 子雷射之指令共振充電供應器。C〇為一組無架電容器具有 65/zF的組合電容，一建蜂電容器匸】亦為一組無架電容号 具有65 的組合電容。飽和電感器42具有約i.5Nh的飽 和驅動電感。觸發器44係為一 IGBT。二極體46與電感體48 會形成一類似於在第5729562號美國專利案中所揭的能量 回收電路’而可使一脈衝所反射的電能在下個脈衝之前被 儲存在C〇上。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 16 {請先閱讀背面之注意事項再填寫本頁) * I I ! 訂·！ ---- AT B7 五、發明說明（14 ) 〔系統·第一較佳實施例〕 -------------裝--- (猜先閱讀背面之it意Ϋ項再填鸾本ϊ>-------------- Installed! ί Please read the precautions on the back before filling in the lettuce page) Order, --line-15 Warrants printed by the Intellectual Property Bureau Staff Consumer Cooperative 447225 A7 ----------- V. Description of the invention ( I3) ° Therefore, a light pipe 6 is provided to further ensure such isolation. The light pipe 6 is a hollow light pipe, which also basically uses total external reflection on the inner surface. The preliminary collection device can be designed to reduce the cone angle of the collected radiation to match the receiving angle of the hollow light pipe. This concept is shown in Figure 1.The dielectric mirror of the #printing tool will be improperly protected from isolated electrode residues because tungsten, silver or lithium atoms will have to fight against one of the hollow light tubes. Only by slowing the gas flow can it diffuse upstream, as shown in Figure 1 (a). [Pulse power supply, unit] The provided pulse power supply unit 10 is a solid-state high-frequency, high-voltage pulse power supply unit, which uses a solid-state trigger and a magnetic switch circuit, such as that described in US Patent No. 5142166. Uncovered pulse power unit. These units are very reliable and capable of continuous operation without the need for major repairs that can withstand months and billions of pulses. The contents of the U.S. Patent No. 5,142,166 are attached herewith. Figure 4 illustrates a simplified electronic circuit that provides a pulsed power source. A preferred embodiment includes a DC power supply 40, which is a command resonance charging supply for quasi-molecular lasers. C0 is a group of frameless capacitors with a combined capacitance of 65 / zF. A built-in capacitor is also a group of frameless capacitors with a combined capacitance of 65. The saturated inductor 42 has a saturated driving inductance of about i.5Nh. The flip-flop 44 is an IGBT. Diode 46 and inductor 48 will form an energy recovery circuit similar to that disclosed in U.S. Patent No. 5,719,562, so that the energy reflected by one pulse can be stored on Co before the next pulse. This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 public love) 16 {Please read the precautions on the back before filling this page) * I I! Order ·! ---- AT B7 V. Description of the Invention (14) [System · First Preferred Embodiment] ------------- Install --- (Guess read the meaning of it on the back first) Refill this text >
如第1圖所示’在一第一較佳實施例中，有一氮與鋰 蒸氣混合的作用氣體會被釋放於同輛電極8中。來自脈衝 電源單元10的電脈衝會造成一足夠高溫與高壓的密集電毁 聚焦於Π處’而將作用氣體中的鋰原子雙重地電離，該作 用氣體會產生在約13.5nm波長的紫外光輻射D 線· 該等光會被收集於全外反射收集器4並導入中空光管6 中’其中的光會再被導向一姓印工具（未示出）。放電腔室 1係被以 輪抽吸栗12保持在一大約4丁〇rr(托）的真空。某 些在作用氣體中的氦會在氦分離器14中被分離，並用來在 第1圊所示之16處潔淨該光管。帶該光管中的氦壓力係最 好匹配於該蝕印工具所需的壓力’其典型係保持在—低壓 或真空。作用氣體的溫度係被以熱交換器2〇保持在所需溫 度’且該氣體係被以靜電濾器22所清潔。該氣體會被釋入 該同軸電極的間隔如第1圖所示。 〔原型單元〕 經濟部智慧时產局員工消費合作社印裂 由申請人及其同儕工作者所構建及測試之一原型的電 漿束縮箪元乃示於第5圖中。主要的元件為匸，電容器蓋板 ，C”電容器蓋板，丨GBT開關’飽和電感器42，真空容器3 ，及同轴電極8。 〔測試結果〕 第6圖乃示出由申請人以第5圖所示的單元所測得之一 典型脈波形狀。申請人有記錄在一 8微秒期間之C,電壓， C !電流及在]3.5nm的強度。在此典型脈衝之整體能量係 17 本紙張々变過用中國國家標準（CNS)A4規格（2】0 X 297公釐） A：As shown in Fig. 1 ', in a first preferred embodiment, a working gas mixed with nitrogen and lithium vapor is released into the same electrode 8. The electrical pulse from the pulsed power supply unit 10 will cause a dense electrical destruction of high temperature and high pressure to focus on Π ′ and double ionize the lithium atoms in the working gas, which will generate ultraviolet light radiation at a wavelength of about 13.5 nm. D-line · The light will be collected in the total external reflection collector 4 and introduced into the hollow light pipe 6 ', and the light therein will be directed to a name stamp tool (not shown). The discharge chamber 1 is maintained at a vacuum of about 4 Torr (Torr) by a pump suction pump 12. Some of the helium in the working gas is separated in the helium separator 14 and is used to clean the light pipe at 16 shown in 1). The pressure of the helium in the light pipe is best matched to the pressure required by the etching tool ', which is typically maintained at low pressure or vacuum. The temperature of the working gas is maintained at a desired temperature 'by the heat exchanger 20, and the gas system is cleaned by the electrostatic filter 22. The interval at which the gas is released into the coaxial electrode is shown in Figure 1. [Prototype Unit] The plasma beam shrinkage of one of the prototypes constructed and tested by the applicant and its peer workers is shown in Figure 5 of the Consumer Cooperatives of Wisdom and Time Bureau of the Ministry of Economic Affairs. The main components are 匸, capacitor cover, C ”capacitor cover, 丨 GBT switch'saturating inductor 42, vacuum container 3, and coaxial electrode 8. [Test Results] Figure 6 shows the A typical pulse shape measured by the unit shown in Figure 5. The applicant has recorded the C, voltage, C! Current, and intensity at 3.5 microseconds during an 8 microsecond period. The overall energy system of a typical pulse here 17 This paper has been converted to Chinese National Standard (CNS) A4 (2) 0 X 297 mm. A:
447225 五、發明說明（15 ) 約0.8J。其脈波寬度（在FWHM即半極限值全寬度）係約 280ns。在崩潰之前其C t電壓係稍低於1 Kv。 此原型實施例可在一高至200Hz的脈衝頻率來操作。 於200Hz所測得之在平均13.5nm頻帶的輻射於4 7：球面角 度係為152W。在la(sigma)的能量穩定度為約6%。申請人 估計以第1圖所示的收集器4約有3.2%的能量可被導入一 有用的13.5 nm光束中。 〔第二個較佳電漿束縮單元〕 一第二個較佳的電漿東縮單元乃示於第2圏中。此單 元係類似於第4042848號美國專利案所述的電漿束縮裝置 。此單元包含兩個外部碟狀電極30與32，及一内部碟狀電 極36。如第4042848號專利案中所述，其束縮會由三個方 向來形成’而如第2圖所示。其束縮會在靠近電極圓周處 開始而朝中心前進’且其放射點會沿著該對稱軸及在内部 電極的中心如第2圖之34處來形成。輻射可被如第1圖之實 施例所述來被收集導引《然而，其乃可在離開該單元之兩 側方向來捕捉該等輕射，如第2圖所示。而且，藉著設一 介電鏡於3 8處’則初始被反射至左惻的輻射會有一相當大 百分比能再被反射回來通過該放射點。此將能促進賴射朝 向右側。 〔第三較佳實施例〕 一第三較佳實施例乃可參考第3圖來說明。此實施例 係類似於第一較佳實施例。惟此實施例中之緩和氣體為氬 。氦具有對13nm的輻射相對透明的理想性質，但其具有 本紙張尺度適用中國國家標準（CNS>A4規格（210 X 297公釐〉 <請先«讀背面之注意事項再填寫本I )447225 V. Description of the invention (15) About 0.8J. The pulse width (full width at half limit value in FWHM) is about 280ns. Before its collapse, its C t voltage was slightly below 1 Kv. This prototype embodiment can operate at a pulse frequency up to 200 Hz. The measured radiation at 200 Hz in the average 13.5 nm band is 47: the spherical angle is 152 W. The energy stability at la (sigma) is about 6%. Applicants estimate that approximately 3.2% of the energy in collector 4 shown in Figure 1 can be directed into a useful 13.5 nm beam. [Second Preferred Plasma Bundle Reduction Unit] A second preferred plasma retraction unit is shown in Section 2 (a). This unit is similar to the plasma beam shrinking device described in U.S. Patent No. 4042848. This unit includes two external dish electrodes 30 and 32, and an internal dish electrode 36. As described in Patent No. 4042848, the constriction will be formed in three directions' as shown in FIG. 2. The beam contraction will start near the circumference of the electrode and proceed toward the center ', and its radiation point will be formed along the axis of symmetry and at the center of the internal electrode as shown at 34 in Fig. 2. Radiation can be collected and guided as described in the embodiment of FIG. 1 However, it can capture such light shots away from the unit on both sides, as shown in FIG. 2. Moreover, by setting a dielectric mirror at 38 ', a considerable percentage of the radiation originally reflected to the left side can be reflected back through the radiation point. This will promote Lai shot towards the right. [Third Preferred Embodiment] A third preferred embodiment can be described with reference to FIG. 3. This embodiment is similar to the first preferred embodiment. However, the moderating gas in this embodiment is argon. Helium has the ideal property of being relatively transparent to 13nm radiation, but it has the paper size applicable to the Chinese national standard (CNS > A4 specification (210 X 297 mm) < Please read the notes on the back before filling in this I)
· I I I _ — II · I I 經濟部智慧財產局員工消費合作社印製 18 經濟部智慧財產局員工消費合作社印裝 A： --------------B7_ 五、發明說明（丨6) 較小的原子量為其不理想的特性。較低的原子量會迫使 吾人在2〜4Τ〇ΓΓ的環境壓力下來操作該系統。氦之小原子 量的另一缺點係’其電極長度須匹配以其驅動電路之時間 差所形成的加速距離。因為氦較輕，故其電極必須比理想 者更長些，才能使氦掉出該電極末端時與流過該驅動電路 之電流波峰同步。 一較重的原子諸如氩會在一定壓力下比氦具有較低的 透射率，但因其較重的質量而可在一較低屋力下形成穩定 的束縮。氬之較低的操作壓力乃足以補償其所增加的吸收 特性。此外，由於較高的原子量故所需的電極長度可減少 。因兩個理由令較短的電極成為較佳者。第一係當使用一 較短的電極時會使電路電感降低。一較低的電感可使驅動 電路更有效牟，而滅.少所需之電的泵送能量。一較短電極 的第二個優點係由該電極末梢至基部的熱傳導路徑長度會 減少。加諸該電極之熱能主要係發生於末梢，而該電極的 傳導冷刼主要發生於基部（輻射冷却亦會發生）。一較短的 電極會令其由較熱的末梢至較冷的基部之長度有一較小的 溫度落差。該每一脈衝之較小的泵送能量，及較佳的冷却 路徑，兩者皆可使該系統以一更高的重複率來操作。提高 重複率可直接增加該系統之平均的光輸出能量。藉提高重 複率來加大輸出能量，乃相反於提高每一脈衝的能量，係 為蝕印光源之平均輸出能量的最佳方法。 於此較佳實施例中，氣態的鋰並未如第一與第二實施 例中被注入該腔室円。而是將固態的鋰置放在中央電極 — ^-------I —---- I <請先閲讀背面之注帝？事項再填寫本頁) 447225 A7 經濟部智慧財產局員工消費合作杜印製 ---_SI--__五、發明說明（17 ) 心之一孔内，如第3圈所示。嗣該電極的熱會將鋰帶至其 蒸發溫度。藉著調整該鋰相對於電極較熱端的高度，乃可 控制靠近該電極末梢之鋰的局部壓力β 一如此進行之較佳 方法係示於第3圖中。有一機構乃被提供來調整該固態鋰 桿末端相對於電極末端的位置6最好該系統係被垂向設置 ，俾使同輕電極8的開放端在謂部，因此任何疼化的鐘將 只會在靠近該中央電極的頂部之處融攪。其光束將以垂直 方向直線向上送出，如第5Α圈所示*(另種可擇的方法係 將電極加熱至超過鋰之熔點的溫度，而使鋰可如液體來被 添加）。極低流量的泵乃可用來以所需的流量率泵送液體 滿足任何特定的重複率。一鎢的蕊心乃可用來將液態鋰潰 引至中央電極末梢之處。 在該電極中心所設的孔乃具有另一重要的優點。由於 電漿東縮係發生於靠近該中央電極末梢的中心，大部份的 能量乃在此區域發散。接近此點的電極材料會被熔銷，而 最後終結於該壓力容器内部之其它表面上。使用一具有中 心孔的電極能大量地減少會腐蝕的材料。此外，申請人的 實驗已顯不鋰蒸氣存在於此區域更能減少電極材料的腐蝕 率。一皺縮管或其它適當的密封方法將可用來將電極設備 進入該腔室的地方保持一良好的密封。填滿固態鋰之更換 式電極乃可容易而低廉地製造，並容易地在該腔室中更換 〔小真空腔室窗〕 遠束縮會產生非常大量的可見光，而需要被由EuV光 本紙張尺度適用中國國家標準（CNS)A4規格（210· III _ — II · II Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 18 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A: -------------- B7_ V. Description of the invention (丨 6) Small atomic weight is its undesired characteristic. The lower atomic weight will force us to operate the system under the ambient pressure of 2 ~ 4T0ΓΓ. Another disadvantage of the small atomic weight of helium is that its electrode length must match the acceleration distance formed by the time difference of its driving circuit. Because helium is lighter, its electrodes must be longer than ideal, so that when helium falls out of the end of the electrode, it is synchronized with the peak of the current flowing through the drive circuit. A heavier atom such as argon will have a lower transmittance than helium under a certain pressure, but due to its heavier mass, it can form a stable beam contraction at a lower house force. The lower operating pressure of argon is sufficient to compensate for its increased absorption characteristics. In addition, the required electrode length can be reduced due to the higher atomic weight. Shorter electrodes are preferred for two reasons. The first series reduces the circuit inductance when a shorter electrode is used. A lower inductance can make the drive circuit more efficient, but less pumping energy required. A second advantage of a shorter electrode is that the length of the heat conduction path from the tip of the electrode to the base is reduced. The thermal energy applied to the electrode mainly occurs at the tip, and the conduction cold heading of the electrode mainly occurs at the base (radiation cooling also occurs). A shorter electrode results in a smaller temperature drop from the hotter tip to the colder base. The smaller pumping energy per pulse, and the better cooling path, both allow the system to operate at a higher repetition rate. Increasing the repetition rate directly increases the average light output energy of the system. Increasing the output energy by increasing the repetition rate is the best way to increase the energy of each pulse, which is the average output energy of the etched light source. In this preferred embodiment, gaseous lithium is not injected into the chamber 円 as in the first and second embodiments. Instead, place solid lithium on the center electrode — ^ ------- I —---- I < Please read the Note on the back first? Please fill in this page for matters) 447225 A7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs for consumer cooperation Du printed ---_ SI --__ V. Description of the invention (17) Inside one of the holes, as shown in circle 3. The heat of this electrode will bring lithium to its evaporation temperature. By adjusting the height of the lithium relative to the hotter end of the electrode, the local pressure β of lithium near the end of the electrode can be controlled. A better way to do this is shown in Figure 3. A mechanism is provided to adjust the position of the end of the solid-state lithium rod relative to the end of the electrode.6 Preferably, the system is installed vertically, so that the open end of the light electrode 8 is in the so-called part, so any painful clock will only Stirs near the top of the center electrode. The light beam will be sent straight up in a vertical direction, as shown in circle 5A * (an alternative method is to heat the electrode to a temperature above the melting point of lithium, so that lithium can be added as a liquid). Very low flow pumps can be used to pump liquid at the required flow rate to meet any specific repetition rate. The core of a tungsten can be used to lead the liquid lithium to the center electrode tip. The hole provided in the center of the electrode has another important advantage. Since the plasma eastward contraction occurs near the center of the center electrode tip, most of the energy is dissipated in this area. The electrode material near this point will be melted and finally end up on other surfaces inside the pressure vessel. The use of an electrode with a central hole can significantly reduce materials that can corrode. In addition, applicant's experiments have shown that the presence of lithium vapor in this area can reduce the corrosion rate of the electrode material. A crimp tube or other suitable sealing method will be used to maintain a good seal where the electrode device enters the chamber. Replaceable electrodes filled with solid lithium can be manufactured easily and inexpensively, and can be easily replaced in this chamber [small vacuum chamber window] Far-beam contraction will generate a very large amount of visible light, which needs to be covered by EuV paper Standards apply to China National Standard (CNS) A4 specifications (210
ί請先閱讀背面之注惠事項再填寫本頁) ，裝--------訂---------線- 297公釐） 20 ii;f部智趕財產局員工消費合作杜印製 A7 ------ B7____ 五、發明說明（l8) 中分開。並且，亦需要有一窗能提供額外的確認，以知該 姓印構件沒有被理或鎢所污染，由本發明所產生之EUV( 極端的紫外線）光束會被高度地吸收於固態物質中。因此 為該光束提供一窗乃為一個挑戰。申請人所提供之窗的解 決辦法係利用一種極薄的箔膜其能透過EUV而反射可見光 °申清人所用之窗係為鈹的箔膜（約有〇,2至〇.5微米），而 與送來的光東之軸呈大約1〇。入射角的斜傾，以此裝置， 幾乎所有的可見光會被反射，而大約5〇至8〇0/〇的£^乂會透 射。當然，如此薄的窗並非十分強固。因此，申請人乃使 用一非常小直徑的窗，而使該光束被聚焦穿過該小窗。最 好是該薄鈹窗的直徑係約為丨〇ιηιη。該小窗的加熱必須很 小心’且為了高重複率亦需要特別地冷却該窗。 在某些設計中’此元件可被僅設計成一光束分離器俾 可簡化該設計’因為不會有壓力差穿過該薄的光學元件。 第10圖乃示出一較佳實施例，其中輻射收集器4係藉 收集器擴伸部4A來延伸’而使光束9聚焦穿過0.5微米厚 1 mm直徑的鈹窗7。 〔預先離子化〕 申請人的實驗己顯示不必預先離子化亦可得到良好的 結果’但有預先離子化則其表現會更佳。在第5圖所示的 原型單元包含DC驅動的火花隙預先電離器可預先電離該 等電極間的氣體。申請人等將能以改良的預先電離技術來 大大地改善這些能量穩定值，及改善其它的性能參數。預 先離子化係申請人等及其他人用來改良準分子雷射性能之 本纸張& f適用中國國家標準（CNS)A4規格（210 X 297公爱） 21 -------------裝------- 訂------- {請先MIS背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 447225 A7 —— -- — B7 五、發明說明（l9) 一種良好的發展技術◊較佳的預先離子化技術包括： 1) DC驅動的火花隙 2) RF驅動的火花隙 3) RF驅動的表面放電 4) 電暈放電 5) 尖峰電路結合預先離子化 這些技術皆在有關準分子雷射的科學文獻中被充分說 明，並且為廣泛公知。 〔爆吹屏蔽體〕 第5B圖示出在一較佳實施例中提供預先離子化之總 共八個火花塞138其中之兩個的位置。此困中亦示出該陰 極111及陽極123其包含一不銹鋼的外部及一鎢的内部。絕 緣護套會包圍陽極123的底部，及一 5mi丨厚的薄膜絕緣體 125會完成該陽極與陰極的隔離。第5Bi〜6圖乃示出一導 致束縮之典型脈衝的過程，該束縮係在初始放電之後大約 l-2/z s於第5Β5圖中完全形成。 當該釋放的電漿藉作用在離子上的勞倫斯力（Lorence forces)而往陽極末梢加速時，流經電漿的電流會造成電子 。一旦到達該電極的末端，如第5B圖之121所示時.徑向 之力的向量會將電漿壓縮而加熱至高溫。 當該電漿被壓縮時，所存在之作用於電漿上的轴向力 量，會將電漿柱拉長如第5B6圖中所示。就是這個伸長導 致不穩定《—旦該電漿柱沿此轴成長超過某一點，則通過 該壓縮電漿區域的電壓減降會變得太大，而不能被在該區 本纸張尺度適用中國國家標準（CNS>A4規格（210 X 297公釐） 22 I------- ---'I** · — — — — — — I 訂·------1 {請先閲it背面之注t事項再填寫本I ) 經濟部智慧財產局員工消贄合作枝印製 A7 — ~ ~— __B7__ 一 _ 1 ~ “ — 五、發明說明（2〇) 域周圍及靠近陽極末端的低壓氣想所承擔。故會發生電弧 放電，而有許多或全部的電流會流過靠近陽極末端之較短 的、較低氣體密度區域，如在第5B6g]中之虛線所示。此 電弧放電乃是有害的，因為其會使脈衝產生不穩定性並 造成相對較快的電極腐姓。 一解決此問題的方法係對該電漿柱在轴向的動作提供 —實體隔柵。該等隔柵係如第5C圖中所示之元件丨43 ’其 係破申請人等稱為爆吹屏蔽體，因為其作用形如一阻抗該 PDF裝置排出電漿的屏蔽體。該爆吹屏蔽體必須由一電絕 緣材料所製成，而有高強的機械與熱性質。並且，當與高 反應性元素諸如經一起操作時，該爆吹屏蔽體的化學相容 性亦必須被考慮。由於其在13.5nm的強烈放射性，鋰係 為一種被推庹於此EUV光源的放射元素。一絕佳的備選者 為單結晶的鋁氧化物，即藍寶石或非結晶的藍寶石例如由 Genera丨Electric公司所製造之Luca】ux商標材料。 已發現該爆吹屏蔽體之理想形狀為定心在陽極上之圓 拱形罩，其半徑等於該陽極的直徑，如第5C圖所示。該 等形狀乃近乎吻合當電漿在最大壓縮時自然發生的電漿流 線。假使該爆吹屏蔽體被設在離陽極末端較遠處，則該電 渡柱將會太長而導致電漿加熱不足及電弧放電的危險。假 使該爆吹屏蔽體離陽極末端太近，則由該中心軸流出而朝 下至陰極的電流會受限制，故仍會導致不充分的電漿加熱 c. 在該爆吹屏蔽體1 43頂部的孔1 44，乃需要能使EUV輻 +紙張（度適用中®國家標準（CNS)A4規格（21(^ 297公* ) - 23 - !裝------一訂---------線 (請先Mit背面之注意事項再填寫本頁> 447225 經濟部智慧財產局員工消費合作社印*'1衣 A7 ------- _B7____ 五、發明說明（) 射可逸出並被收集以供使用。此孔必須被製成儘可能地小 ，因為該電漿會趨於由此孔洩出而在該屏蔽體上方形成一 條細長的柱》有一斜面切入此孔144中，俾可吏大地離轴 收集由該電漿束縮裝置所產生的EUV輻射。 第5C1〜6圖係表示該爆吹屏蔽體如何容納該電漿縮 束而避免電弧放電> 應可瞭解上述實施例等係僅用來說明可代表本發明之 原理的許多具體實施中的幾例而已D例如，不用循環回收 該等作用氣體，亦可最好只吸收鋰而排出氦。使用其它的 電極’即塗覆不是鎢與銀三組合物者亦為可行β例如銅或 鉑電極及其塗層等亦可使用^其它可產生電漿縮束的技術 亦可取代前述具體實施例。有一些該等其它技術乃被揭述 於本說明書之背景部份所提及的專利案中，而其說明内容 將併此附送。許多產高頻高壓之電脈衝的方法皆可被利用 。一可擇之例係將光管維持在室溫，而在兹及鎢企圓下降 該光管的長度時將該二者冷凍析出^此冷凍析出的概念將 可更減少會達到使用於蝕印工具之光學構件的殘眉量，因 為該等原子在撞擊時會永久地附著於該光管壁上。藉著將 該收集裝置設計成透過在初步放電室之一小孔來再現該放 射點’並使用一差動泵抽設計，亦可避免電極材料澱積在 姓印工具的構件上。氦或氬可由第二腔室經由該小孔供入 第一腔室中。此等設計已顯示能有效地防止材料殺積在銅 蒸氣雷射的輸出窗上。鋰氩化物乃可用來取代鋰。該單元 亦可如一靜態裝填的系統來運作’而沒有作用氣體流經該 本紙張尺度適用中國國家標準（CNS)A4规格（210*297公釐） 24 i ^--------^---------^ (請先Μ讀背面之注帝》事項再填S本頁) A： ------- —_ 五、發明說明（22 ) 等電極。▲然，從單一脈衝至每秒約5脈衝，到每秒數百 或數千脈衝等之非常廣泛的重複率範圍皆為可能的。若有 需要，供調整固態鋰之位置的調整機構乃可被修改，而使 其中央電極末梢的位置亦為可調整的’俾顧及該末梢的腐 姓。 除了上述各例之外，許多其它的電極設計亦為可行的 。例如’該外側電極乃可為錐形而非筒狀而其較大直徑朝 向該縮東。並且’藉著使内部電極突伸超過外部電極的末 端，某些實施例的性能亦可被改良。此係可用在該領域中 十分泛知的火花塞或其它的預先電離器來完成。另—種較 佳的選擇係利用外電極排列成一桿陣，而整體形成一筒狀 或錐狀。此研發乃有助於沿該電極輻心保持一對稱的縮束 ’因為其可造成電感的穩定。 爰是，讀者乃需以所附之申請專利範圍及其依法之等 政物來考量本發明的範圍，而非由以上所述之各例來決定 -------------裝-------訂---------線 (請先Mit背面之注意事項再填寫本頁) ί2 格 規 AJ s, N (c 準 標 家 國 國 /" 狀li 經濟部智慧財產局員工消費合作社印製 公 97 經濟部智慧財產局員工消費合作社印製 447225 A7 _B7_ 五、發明說明（23 ) 元件標號對照 1…放電腔室 22…靜電濾器 2…電漿束縮單元 30、32···外部碟狀電極 3…真空容器 36…内部碟狀電極 4···高能光子收集器 40…DC電源供應器 5···殘屑收集器 42…飽和電感器 6···中空光管 44…觸發器 7…鈹窗 46”+二極體 8…同料電極 48…電感體 9…光束 1U…陰極 10…脈衝電源電路 123…陽極 11…電漿焦點 13 8…火花塞 12…渦輪抽吸泵 143…隔柵（爆吹屏蔽體） 14…氣分離器 144…孔 20…熱交換器 ----------裝-------—訂--------* 線 (請先閱讀背面之注t事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210*297公釐） 26ί Please read the note on the back before filling in this page), install -------- order --------- line-297 mm) 20 ii; f employees Consumption cooperation Du printed A7 ------ B7____ V. The invention description (l8) is separated. In addition, a window is required to provide additional confirmation that the name stamp member is not contaminated by lithography or tungsten, and the EUV (Extreme Ultraviolet) beam generated by the present invention will be highly absorbed in solid matter. Providing a window for the beam is therefore a challenge. The solution for the window provided by the applicant is to use an extremely thin foil film that can reflect visible light through EUV. The window used by Shen Qing is a beryllium foil film (about 0.2 to 0.5 microns), And the axis of Guangdong sent is about 10. Inclination of the angle of incidence. With this device, almost all visible light will be reflected, and £ ^ 乂 from about 50 to 80/100 will be transmitted. Of course, such a thin window is not very strong. Therefore, the applicant used a very small diameter window to focus the light beam through the small window. Preferably, the diameter of the thin beryllium window is about 〇ιιιη. The small window must be heated very carefully 'and the window needs to be cooled especially for high repetition rates. In some designs, 'this element can be designed only as a beam splitter. This design can be simplified' because no pressure difference will pass through the thin optical element. Fig. 10 shows a preferred embodiment, in which the radiation collector 4 is extended by the collector extension 4A 'to focus the light beam 9 through a beryllium window 7 having a thickness of 0.5 micrometer and 1 mm in diameter. [Pre-ionization] The applicant's experiments have shown that good results can be obtained without pre-ionization ', but it will perform better with pre-ionization. The prototype unit shown in Figure 5 contains a DC-driven spark gap pre-ionizer to pre-ionize the gas between these electrodes. Applicants and others will be able to greatly improve these energy stabilization values, as well as other performance parameters, with improved pre-ionization techniques. The pre-ionized paper used by applicants and others and others to improve excimer laser performance &f; Applies to China National Standard (CNS) A4 (210 X 297 public love) 21 -------- ----- Equipment ------- Order ------- {Please note the MIS on the back of the page before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 447225 A7 ----- — B7 V. Description of the invention (l9) A good development technology. The better pre-ionization technology includes: 1) DC-driven spark gap 2) RF-driven spark gap 3) RF-driven surface discharge 4) Corona discharge 5) Spike circuits combined with pre-ionization are well described in the scientific literature on excimer lasers and are widely known. [Blow Shield] Fig. 5B shows the position of two of a total of eight spark plugs 138 provided with a pre-ionization in a preferred embodiment. This trap also shows that the cathode 111 and anode 123 include a stainless steel exterior and a tungsten interior. An insulating sheath surrounds the bottom of the anode 123, and a 5 mi thick film insulator 125 completes the isolation of the anode from the cathode. Figures 5Bi to 6 show the process of a typical pulse that causes beam shrinkage. The beam shrinkage is completely formed in Figure 5B5 after about 1-2 / z s after the initial discharge. When the released plasma is accelerated toward the anode tip by Lorence forces acting on the ions, the current flowing through the plasma will cause electrons. Once it reaches the end of the electrode, as shown in Figure 5B, 121. The vector of radial force will compress the plasma and heat it to high temperature. When the plasma is compressed, the axial force existing on the plasma will stretch the plasma column as shown in Figure 5B6. It is this elongation that leads to instability. "-Once the plasma column grows more than a certain point along this axis, the voltage drop through the compressed plasma area will become too large, and it cannot be used in this area. National Standard (CNS > A4 Specification (210 X 297 mm) 22 I ------- --- 'I ** · — — — — — — I Order · ------ 1 {Please first Please read the note t on the back of it and fill in this I) Printed by the staff of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 — ~ ~ — __B7__ _ 1 ~ "— V. Description of the invention (20) Around the domain and near the anode end The low-pressure gas is assumed to be borne. Therefore, an arc discharge will occur, and many or all of the current will flow through a shorter, lower gas density region near the anode end, as shown by the dashed line in 5B6g]. This arc Discharge is harmful because it can cause pulse instability and cause relatively fast electrode rot. One solution to this problem is to provide the plasma column with an axial movement—a physical barrier. The barrier is the element shown in Figure 5C. 43 'It is broken by the applicant and is called a blow-shield. Because it acts like a shield that resists the PDF device from discharging the plasma. The blow-shield must be made of an electrically insulating material and have high mechanical and thermal properties. And, when reacting with highly reactive elements such as the warp When operating together, the chemical compatibility of the blown shield must also be considered. Due to its strong radioactivity at 13.5nm, lithium is a radioactive element pushed to this EUV light source. An excellent candidate It is a single crystalline aluminum oxide, that is, sapphire or amorphous sapphire, such as the Luca] ux trademark material manufactured by Genera 丨 Electric Company. It has been found that the ideal shape of the blow-shielding body is a circular arch centered on the anode. The hood has a radius equal to the diameter of the anode, as shown in Figure 5C. These shapes are close to the plasma streamlines that naturally occur when the plasma is at maximum compression. Suppose that the blow-shield is placed at the end of the anode Farther away, the electric cross-pillar will be too long, resulting in the danger of insufficient plasma heating and arc discharge. If the explosion shield is too close to the anode end, it will flow out from the central axis and go down to the cathode The current will be limited, so it will still lead to insufficient plasma heating. C. The holes 1 44 in the top of the blow-shielding body 1 43 need to be able to make EUV radiation + paper (degrees in use ® National Standard (CNS) A4) Specifications (21 (^ 297mm *)-23-! Installed -------- one order --------- line (please pay attention to the precautions on the back of Mit before filling out this page) 447225 Ministry of Economy Wisdom Printed by the property bureau employee consumer cooperative * '1 Yi A7 ------- _B7____ 5. Description of the invention () The shot can escape and be collected for use. This hole must be made as small as possible because the electricity The slurry will tend to leak out of this hole and form an elongated column above the shield. A bevel is cut into this hole 144, so that the EUV radiation generated by the plasma beam shrinking device can be collected off-axis. Figures 5C1 to 6 show how the blow shield can accommodate the plasma shrinkage and avoid arc discharge. It should be understood that the above embodiments are only used to illustrate a few of the many specific implementations that can represent the principles of the present invention. For example, D. For example, instead of recycling these working gases, it is better to absorb lithium and discharge helium. Use of other electrodes, that is, coatings that are not a combination of tungsten and silver are also feasible. For example, copper or platinum electrodes and their coatings can also be used. ^ Other technologies that can generate plasma beam shrinking can also replace the foregoing specific embodiments. . Some of these other technologies are disclosed in the patent cases mentioned in the background section of this specification, and their descriptions are attached herewith. Many methods of generating high frequency and high voltage electrical pulses can be used. An optional example is to maintain the light pipe at room temperature, and freeze and precipitate the two when the length of the light pipe is reduced by tungsten and tungsten. The concept of frozen precipitation will be reduced and will be used for etching. The amount of residual eyebrows on the optical components of the tool, because the atoms will permanently attach to the wall of the light pipe upon impact. By designing the collection device to reproduce the emission point through a small hole in the preliminary discharge chamber and using a differential pumping design, it is also possible to prevent the electrode material from being deposited on the components of the name stamp tool. Helium or argon can be supplied from the second chamber into the first chamber via the orifice. These designs have been shown to effectively prevent material from trapping on the output window of the copper vapor laser. Lithium argonide can be used instead of lithium. This unit can also be operated as a static loading system, without any gas flowing through the paper. The size of the paper is applicable to China National Standard (CNS) A4 (210 * 297 mm) 24 i ^ -------- ^ --------- ^ (Please read the note on the back of the Emperor, and then fill out the S page) A: ------- —_ 5. Description of the invention (22) and other electrodes. ▲ Of course, a very wide range of repetition rates is possible from a single pulse to about 5 pulses per second to hundreds or thousands of pulses per second. If necessary, the adjustment mechanism for adjusting the position of the solid lithium can be modified, so that the position of the tip of the central electrode is also adjustable ', regardless of the surname of the tip. In addition to the above examples, many other electrode designs are also feasible. For example, 'the outer electrode may be tapered instead of cylindrical and its larger diameter is directed toward the east. And, 'by making the internal electrode protrude beyond the end of the external electrode, the performance of some embodiments can be improved. This system can be accomplished with spark plugs or other pre-ionizers well known in the art. Another-a better option is to use external electrodes arranged in a bar array, and the whole form a cylindrical or tapered shape. This research and development helps to maintain a symmetrical shrinking beam along the radial center of the electrode because it can cause the stability of the inductor. That is to say, the reader needs to consider the scope of the present invention with the scope of the attached patent application and its political objects according to law, rather than the examples described above .------------ -Install ------- Order --------- line (please pay attention to the notes on the back of Mit before filling out this page) ί2 Standard AJ s, N (c Standard Home Country / " Status li Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 97 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 447225 A7 _B7_ V. Description of the Invention (23) Component number comparison 1 ... Discharge chamber 22 ... Electrostatic filter 2 ... Plasma Beam shrinking unit 30, 32 ... External dish electrode 3 ... Vacuum container 36 ... Internal dish electrode 4 ... High energy photon collector 40 ... DC power supply 5 ... Debris collector 42 ... Saturated inductor 6 ··· Hollow tube 44 ... Trigger 7 ... Beryllium window 46 "+ Diode 8 ... Same electrode 48 ... Inductor 9 ... Beam 1U ... Cathode 10 ... Pulse power circuit 123 ... Anode 11 ... Plasma focus 13 8 ... spark plug 12 ... turbine suction pump 143 ... gate grille (explosion shield) 14 ... gas separator 144 ... hole 20 ... heat exchanger --------- -Install --------- Order -------- * line (please read the note t on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 specification (210 * 297 mm) 26