經濟部中央標準局員工消費合作社印製 4468 P ^ A7 B7 五、發明説明（） 背景說明： 在積體電路製程中照相（Photolithography)製程對產 品之良率影響甚鉅，故是非常重要时一環，而照相製程實 際上又包含曝光（exposure)及顯憲（developing)。曝光製 程係利用光罩（mask)上區分透光區與非透光區的圖案將晶 Η上之光阻選擇性地曝光，接著顯影的目的在於把光阻曝 光的部份利用顯影液對它具有較大溶解度將其溶去，彤成 相同於光罩上之圖栗。同時，為了應付生產線上的大量生 產，通常單一套的光罩是不夠用的，故需要再多做幾套相 同的光章來增加產能。 同時，對於新光罩線幅尺寸之微量異常，往注無法藉 由光學顯微鏡下將其分辨出不同來。因此為了確認新光罩 的圖案設計是否異常及降低不必要的損失起見，通常會實 際少量生產幾批貨，然後去做後半段測試，若其良率能符 合規格，則表示新光罩沒有問題，方可真正讓其它晶片通 過。然而，要得到新光罩是否異常的婼果，則必需等待1 -2個月時間，頗為耗時，故嚴重影馨到生產線上之產能及 增加製造成本。因此實在有必要提出一種可迅速且準確地 測得備份光簞是否異常之檢驗方法。 發明概逑： 本發明主要目的乃辑供一 _可迅逮且準確地測得到備 份光罩是否異常的婼果》以達到增加生產線產能，降低製 造成本及提高產品競爭力等功效。 —3 ^— 本紙張尺度逍用中國國家標隼（CNS ) Α4規格（210Χ297公釐） (請先閱讀背面之注意事項再填寫本頁) ο. 訂 4 48 0 2 0 A? __. ._ B7_ 五、發明説明（) 本發明次一目的乃是提供一種藉由圖形比對機如 KL A 廠脾儀器等來檢驗僮份光罩是.否異常，並進而達到增加生 產線產能，降低製造成本及提菡產品競爭力等功效。 本發明主要係利用欲比對的兩套光罩（即原光罩與傲 份光罩）交錯地暘光在同一片晶片上。然後，藉著圖形比 對機如KLA廠脾儀器 之圖形比對方式來檢驗兩套光罩的設計是否完全相同，意 即可大幅縮短生產線上檢査備份光罩是否異常所需時間， 而大大地提高生產線之產能，並進而達到藉由降低製造成 本而提高產品競爭力之功效。 附圖說明： 圖1為圖形比對機在進行檢査光罩上缺陷（defect)之路徑 示意圖。 圖2為圖彤比對機之對方式示意圖。 圖3為依據本發明所製成供圖形比對機檢驗備份光罩是否 異常之控片圖樣。 為使貴 審査委員對本發明技術手段及其功效更加明 瞭，茲佐以圖式並詳加說明如后： 經濟部中央標準局負工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 一般圖形比對機係，如KLA廠脾儀器，係用來檢査生 產線上晶片之顆粒（particle)數目及其分佈情髟，其檢査 時進行路徑有如蛇行走一般彎彆曲曲，如圖1中之 swath 1至 swath 3 所示。該圖形比對機當在檢査如圖1中標號 B晶粒（die)時會把其影像及其右邊晶粒A之影像做為輸 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 4 6:::、 A7 B7 經濟部中央標準局負工消費合作社印製 五、 發明説明（ ) 1 入 影 像 » 同 時 做 圖 彤 比 對 即 兩 影 像 相 減 (d i f f e r e Π C e ) 最 1 後 祀 差 異 部 份 顯 現 出 來 Ο 現 舉 例 說 明 > 請 參 閲 xm 麵 2 在 標 1 1 號 B 晶 粒 有 一 缺 陷 D1 ,D2， D3 (如髒物） 存 在 » 其 中 D2色 'JnJ 澤 較 ^ [ 請 ) I D1 ，U 3為深， 則圖形比對機如KLA 廠牌儀器會把標號B 晶 粒 先 閱 .1 J 影 像 與 其 右 邊 晶 粒 A 之 影 像 作 差 異 比 對 > 並 把 比 對 之 结 果 讀 背 1 [ 作 為 輸 出 顯 現 出 來 即在唯- -具有差異之缺陷Di, D2 t D3 之 注 1 1 處 才 有 影 像 > 如 圖 2 之 右 _ 所 示 〇 由於標號D2 處 之 差 異 意 事 1 程 度 返 較 D1 ，D3為大， 因此圖2 右圖之D2處為白色而D1， D3 再 填 宜 1 A 為 灰 色 * 表 示 其 和 差 異 為 0 處 之 背 景 里 色 區 之 差 里 程 度 本 頁 y 1 * * 當 然 該 差 異 程 度 亦 可 Μ 數 值 大 小 表 示 〇 1 I 本 發 明 係 利 用 原 光 罩 (即舊光罩） 與 備 份 光 ( 即 新 光 1 1 I 罩 ) 以 - 行 一 行 交 錯 式 埤 曝 光 在 同 一 晶 片 上 ， 所 使 用 之 曝 1 i 光 機即 為 目 前 常 用 之 步 進 機 (s t e P pfe Γ ), 再經顯影後得 到 訂 1 如 圖 3所示之圖粟。 圄3 中斜線羁係代表傅份光罩曝光處， 1 I 再 利 用 圖 形 比 對 機 如 KLA 廠 脾 儀 器 » 以 如 [Si 圃 1 行 進 方 式 來 1 1 進 行 檢 査 * 故 在 新 與 舊 光 罩 交 界 處 各 一 個 晶 粒 (d i e ) 會 做 :1 圖 樣 (p a 11 e r η ) 比 對 的 工 作 〇 若 兩 光 罩 的 圖 樣 不 同 » 如 新 光 罩 有 Mr 線 等 異 常 (d e f b c t ) 處 存 在 時 則 此 異 常 (d e f e c t ) Π I 將 會 在 圖 形 比 對 機 如 KLA 廠 脾 儀 器 的 輸 出 重 覆 性 地 出 現 〇 I 1 〇 若 兩 塊 光 罩 的 jm 岡 樣 相 同 » 則 不 會 有 此 情 形 〇 故 只 要 藉 rgr 圆 1 彤 比 對 機 去 檢 査 圖 3 的 控. 片 » 若 未 出 現 重 覆 性 的 異 常 處 » I 1 jVTi 就 表 示 備 份 光 罩 與 原 光 罩 相 同 〇 同 時 » 若 不 慎 該 晶 片 被 髒 1 l 物 (P a r t i cl e ) 染 * 則 該 Μ 常 (de f e c t) 會 散 佈 式 出 琨 而 非 I 重 覆 性 地 出 現 〇 { 1 -5 1 1 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（2I0X297公釐} 44S82 0 at Β7 五、發明説明（) tfc較本發明與習知技術可發現本發明明顯具有下列優 點： 1. 習知為了保險起見，通常會實際少量生產幾批貨，然後 去做後半段測試》若其良率能符合規格，則表示備份光 罩沒有問題。然而為得此结果往往需耗時一，兩個月而 嚴重地影響生產線之產能及喪失產品之競爭力。反觀本 發明並不需要實際投人生產，即可在極短時間内得到正 確的结果，故可大大地提高生產線之產能t並進而達到 提高產品競爭力之功效。 2. 對於備份光罩線幅尺寸之微許差異，在習知技術是無法 藉由光學顯微鏡分辨出來，然而依據本發明之方法則可 輕易而準確地分辨出來。 因此，本發明較現有技.術更明顯具有增進之功效，極 具產業上利用價值，爰依法提出發明専利之申請。又本發 明之最佳實施例已於前面中揭露，凡熟悉本行業者據此所 做單純組合、等功效替換皆不脫離以下所述之申請專利範 圍之範曦。 (請先閱讀背面之注意事項再填窝本頁) '訂 線> 經濟部中央標準局貝工消費合作社印製 6 本紙張尺度通用中國國家揉準（CNS ) A4規格（210X297公釐）4468 P ^ A7 B7 printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economics 5. Description of the invention () Background note: The photolithography process in the integrated circuit manufacturing process has a great impact on the yield of the product, so it is very important. , And the photographic process actually includes exposure and developing. The exposure process uses a pattern on the mask to distinguish between light-transmitting and non-light-transmitting areas to selectively expose the photoresist on the crystallite. The purpose of the subsequent development is to expose the photoresist to the exposed part using a developer. It has a large solubility to dissolve it, and it becomes the same as the chestnut on the photomask. At the same time, in order to cope with the large-scale production on the production line, a single set of photomasks is usually not enough, so it is necessary to make a few more sets of the same light to increase production capacity. At the same time, for the slight abnormality of the new mask's line size, the injection cannot be distinguished by the optical microscope. Therefore, in order to confirm whether the pattern design of the new photomask is abnormal and reduce unnecessary losses, a few batches of goods are usually actually produced, and then the second half of the test is performed. If the yield rate meets the specifications, it means that the new photomask has no problems. Only then can other chips pass. However, in order to get the result of the abnormality of the new photomask, it is necessary to wait 1-2 months, which is quite time-consuming, so it seriously affects the production capacity on the production line and increases the manufacturing cost. Therefore, it is really necessary to propose a test method that can quickly and accurately measure whether the backup optical fiber is abnormal. Summary of the invention: The main purpose of the present invention is to provide a quick and accurate way to detect whether the backup mask is abnormal. To achieve the effects of increasing production line production capacity, reducing manufacturing costs and improving product competitiveness. —3 ^ — The paper size is in accordance with China National Standard (CNS) Α4 specification (210 × 297 mm) (Please read the precautions on the back before filling this page) ο. Order 4 48 0 2 0 A? __. ._ B7_ 5. Description of the invention () The second purpose of the present invention is to provide a graphical comparison machine such as the KL A factory spleen instrument to check whether the child's mask is abnormal, and then to increase the production line capacity and reduce manufacturing costs. And enhance the competitiveness of products and other effects. The present invention mainly uses two sets of photomasks to be compared (that is, the original photomask and the photomask) to stagger light on the same wafer. Then, by using a graphic comparison machine, such as the graphic comparison method of the KLA factory spleen instrument, to verify that the design of the two sets of masks is completely the same, which can greatly reduce the time required to check whether the backup mask is abnormal on the production line, and greatly Increase the production line's production capacity, and then achieve the effect of improving product competitiveness by reducing manufacturing costs. Brief Description of the Drawings: Fig. 1 is a schematic diagram of a path of a defect on a photomask by a graphic comparison machine. Fig. 2 is a schematic diagram of the alignment method of the Tutong comparison machine. Fig. 3 is a control piece pattern made by the pattern comparison machine for checking whether the backup photomask is abnormal according to the present invention. In order to make your reviewing committee more aware of the technical means of the present invention and its effects, here is a diagram and detailed description as follows: Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (Please read the precautions on the back before filling this page ) General graphics comparison systems, such as the KLA factory spleen instrument, are used to check the number of particles and their distribution on the production line. The inspection process is like a snake walking, as shown in Figure 1. The swath 1 to swath 3 are shown. This graphic comparison machine will check the image of die B on the right and the image of die A on the right as the paper size when checking the die B shown in Figure 1. The Chinese paper standard (CNS) A4 specification (210X297) 4): 6 :::, A7 B7 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention () 1 Into the image »At the same time, the two images are subtracted (differe Π C e) 1 The difference between the back sacrifice appears. Now an example is shown. Please refer to the xm surface 2. There is a defect D1, D2, D3 (such as dirt) on the No. 1 B grain. »Among them, the D2 color 'JnJ 泽 比 ^ [ Please) I D1 and U 3 are deep, then the graphics comparison machine, such as KLA brand instrument, will read the B grain first. 1 J image is compared with the image of grain A on the right > The result reads back 1 [It appears as an output, that is, there is an image only at the note 1 1 of the defect Di, D2 t D3 with differences> as shown on the right of Figure 2. The difference at the label D2 means that the degree 1 is greater than that of D1, and D3 is larger. Therefore, D2 and D1 in D2 and D3 on the right in Figure 2 should be filled in. 1 A is gray *, which indicates that the sum of the differences is 0 in the background. The degree of the difference in the color area on this page y 1 * * Of course, the degree of difference can also be expressed by the numerical value. 01 I The present invention uses the original mask (that is, the old mask) and the backup light (that is, the new light 1 1 I mask) to -Row-by-row staggered exposure on the same wafer, the exposure machine used is the current commonly used stepper (ste P pfe Γ), and then developed to obtain the order 1 as shown in Figure 3 .圄 3 The middle oblique line represents the exposure position of Fu Fen's mask. 1 I then use a graphic comparison machine such as the KLA factory spleen instrument »to inspect it in the way of [Si garden 1 travel 1] * So at the junction of the new and old masks Each die will do: 1 pattern (pa 11 er η) comparison work 〇 if the patterns of the two masks are different »If there is an exception (defbct) such as Mr line in the new mask (this exception) defect) Π I will appear repeatedly on the output of a graphics comparison machine such as the KLA factory spleen instrument. 〇I 1 〇If the jm pattern of the two masks is the same », this will not happen. So as long as the rgr circle 1 Check the control in Figure 3 with a comparison machine. Film »If there are no repetitive abnormalities» I 1 jVTi means that the backup mask is the same as the original mask. At the same time »If accidentally the wafer is dirty 1 l (P arti cl e) dyeing * then the Μ often (de fect) will be distributed out instead of I repeated 〇 {1 -5 1 1 1 1 This paper size applies Chinese National Standard (CNS) A4 specification (2I0X297 mm) 44S82 0 at Β7 V. Description of the invention (tfc) Compared with the present invention and the conventional technology, it can be found that the present invention has obvious The following advantages: 1. It is common practice to produce a few batches of goods for the sake of insurance, and then do the second half of the test. "If the yield rate meets the specifications, it means that there is no problem with the backup mask. However, for this result, it is often It takes one or two months, which seriously affects the production line's production capacity and loses the competitiveness of the product. In contrast, the present invention does not require actual investment in production, and can obtain correct results in a very short time, so it can greatly improve The capacity t of the production line can further improve the competitiveness of the product. 2. The slight difference in the size of the backup mask line width cannot be distinguished by the optical microscope in the conventional technology, but the method according to the present invention can easily It can be accurately distinguished. Therefore, compared with the prior art, the present invention has an obvious improvement effect, which is very useful in industry. Value, according to law, file an application for invention benefits. Also, the preferred embodiment of the present invention has been disclosed in the foregoing. Anyone who is familiar with the industry based on this simple combination and other functional replacements will not depart from the scope of patent application scope described below. (Please read the precautions on the back before filling in this page) 'Ordering &Printing;> Printed by Shellfish Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs 6 The paper size is in accordance with China National Standard (CNS) A4 (210X297mm)