經濟部智慧財產局員工消費合作社印製 A7 ------------ 五、發明說明（1 ) [產業上之利用領域] 本發明係關於一種使用GaP化合物半導體之綠色系 統之半導體發光元件之製法。更詳言之，係關於將半導想 阳片之周圍用濕式蝕刻法予以粗面處理之結果，具有提高 外部微分量子效率之同時，使電極不會受處理液之侵蝕， 且可充分保持與半導體層之有歐姆接觸及金屬線接合性之 電極之半導體發光元件之製法者。 [以往之技術] 以往之使用GaP化合物半導體之半導體發光元件係 如第2圖所示’例如在n形之Gap所成之半導韹基板21 上’分別成長有例如以GaP所成之η形層22及GaP所成 之P形層23之磊晶，並其間之pn接合而形成有發光層 形成部24。然後’在其表面侧之一部分設有由Au_Be合 金層26a，Ti層26b’及Au層26c所成之p側電極26， 另在在半導體基板21之背面側設有以Au-Be合金層形成 >之η侧電極27，從晶圓予以晶片化。局部性設有該表面 側之Ρ側電極26之理由是因電極部分會遮斷光，將電極 面積儘量縮小’而使電流能擴散到晶片内之全部領域，以 增加輸出於表面側之光。再且，形成3層構造之理由係第 一層之Au-Be合金層26a為使與GaP層之有歐姆接觸為 良好’而中間之Ti層26b為當第一層之Au_Be層及合金 化之GaP層之Ga因擴散而析出於電極之表面時金屬線 接合之黏接力會降低，因而要防止其擴散而作為阻撞層之 用者。並且’表面之第三層之八11層2 6c係為了要提言金 各紙张尺度適用令國國家標準（CNS)A4規格（21〇 X 297公·餐） 311156 -------------裝---------IT---------線 (請先閱讀背面之注意事項再填寫本 經濟部智慧財產局員工消費合作社印製 4444 1 7 A7 ------- B7 五、發明說明（2 ) 線等之金屬線接合時之與金屬線之密接性而設者。 已知在該晶片化後，例如實行鹽酸處理而使半導體層 之露出面成為凹凸之粗面之結果，可提高把光輸出於外邹 之效率之外部微分量子效果，尤其是在欲提高外部微分量 子效率時用鹽酸等之濕式蝕刻法實行粗面處理。 發明所欲解決之問題] 以往之在Gap基板上成長GaP層，在晶片化後把半 導體層之露出面予以粗面處理之半導體發光元件係如前 述’在半導趙積層部之表面及半導體基板之背面形成電極 之後用濕、式蝕刻法實行粗面處理。此乃因粗面處理是只在 各晶片之切割之後始能實行，而將電極在晶圓之狀態下形 成較有效率’以及如果在半導體晶圓之狀態下全面予以粗 面處理後形成電極時，在引線接合時不容易識別電極而會 使引線接合特性惡化，以及增加與接觸面之阻力等的緣 故。然而’在形成電極之後用濕式蝕刻法來粗面處理時， 電極也會浸潰於處理液。例如，具以鹽酸實行粗面處理時， 即有在前述之三層構造之p側電極26當中，中間之Ti層 26b被鹽酸侵蝕之性質。於是，露出於p側電極26之側 面之Ti層2 6b將被鹽酸侵蝕，為了避免Ti層26b被侵蝕， 必需要使Ti層26b非常地薄。結果，無法充分發揮做為 阻擋層之功能，有引線接合性降低的問題存在。 另一方面，將半導體之露出面作成粗面之理由是防止 發光層發光之光在發光元件晶體之内部重複全反射而在内 部被吸收，以使光容易輸出外部的緣故，以其凹凸之深度 I I * ί I I--^ 111111 I J r (靖先閱嬪背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 2 311156 經濟部智慧財產局員工消費合作社印製 」氏張尺家標牵（CXS)A{規格⑵〇, 297公 A7 B7 五、發明說明（3 ) 而使反射率有變化，致使外部微分量子效率大幅度地變 化。因此’將粗面處理用處理液調節成不侵蝕電極材料之 濃度而實行粗面處理時，半導體層之露出面之凹凸不能成 為最適當的粗度，有無法充分提高外部微分量子效果之問 題存在。 本發明係鑑於上情所成，其目的在於提供一種在發光 元件晶片之周圍形成凹凸之粗面處理之同時，以良好的歐 姆接觸’且防止Ga等向電極表面之擴散以提高引線接合 性之電極之半導體發光元件之製造方法。 [用以解決問題之手段] 本發明之半導體發光元件之製法包活下述之過程：在 以GaP基板所成之晶圓表面’使包含以所成之订形 層及Ρ形層形成發光層之半導體積層部成長磊晶，在前述 半導體積層部之表面之部分形成一方之電極並使其可設在 各明片之表面積之一部分之狀態，在前述半導體基板之背 面形成另一方之電極，將前述晶圓予以切割而晶片化，將 各曰曰片之半導體之露出面予以粗面處理之半導體發光元件 者；其特徵為以與GaP層作歐姆接觸的之接觸金屬層及 M〇層以及Au層之三層構造形成前述一方之電極，並以 鹽酸實行前述粗面處理。 在此所謂粗面處理者，係专畦发* > 货惠味每在半導體層之露出面 形成例如高低差為0.1至3；czm& &μ 左右之凹凸的處理。所謂 觸金屬層係意咮著可與Gap層復 增得到歐姆接觸之金屬層 而s ;可使用例如Au及Be，Zn IN!當中之至少—種之 311156 I - I— I— I— I Η— ί— l— 11— j_ 1 - n n 1j n 1 一一eJ* n I I (請先閱璜背面之注意事項再填寫本頁) ^444 ^444 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（4 ) 合金者》 使用該製法之結果’因為以接觸金屬層及M〇層以及 Au層之三層構造形成表面側之電極，用以粗面處理半導 體層表面之藥酸不會侵轴電極之任一身。因此，可將M〇 展例如100至3000埃左右之厚度，而作為阻擋層而可完 全防止Ga之擴散’可用純粹的Au層維持電極之表面。 因此’可充分地確保金線等之引線接合之結果之黏接力。 [實施發明之形態] 本發明之半導體發光元件之製法為如第1圖中以其一 實施形態所製造之半導體發光元件晶片（以下簡稱為LED 晶片）之剖面說明圈所示’在Gap基板1上依次成長由Gap 所成之η形層2及p形層3之發光層之半導體積層部4之 蟲晶。該蟲晶係把各層例如生長成1〇至1〇〇 左右之 厚度則可提高光之輸出效果，故用液相磊晶成長法來成長 時可容易成長厚而結晶性良好之GaP層而較佳。然後， 在其半導想積層部4之表面部分地形成一方之電極（p側 電極）6並使其可設在各晶片之表面積之一部，而在半導 體基板1之背面形成另一方之電極（n側電極）7 β繼而將晶 圓予以切割成晶片化’並以鹽酸粗面處理各晶片之半導趙 積層部4之露出面。本發明為以與GaP層3歐姆接觸之 接觸金屬層6a及Mo層6B以及及Au層6c之三層構造 形成該p側電極6’並以鹽酸實行前述粗面處理為其特徵 者。 要在GaP基板1上形成GaP層所成之發光層之半導 (請先閱讀背面之注意事項再填寫本頁) 裝il!!f訂·--------線 本紙張尺度適用令國國家標準（CNS)A4規格（21CU 297公釐） 4 311156 經濟部智慧財產局員工消費合作社印製 A7 __________B7____ 五、發明說明（5 ) 體部4液相成長磊晶時’例如將摻雜η形摻雜劑之Gap 予以熔融之η形之Ga融液之舟jbl之溫度設定為例如攝氏 9〇〇至1000度左右’而將GaP基板1之一面與該Ga融 液接觸之同時慢慢地降低Ga融液之溫度，則隨著溫度之 降低在GaP基板1上依次成長η形之GaP層之磊晶2。 例如’成長到60至80/zm左右之厚度（生長溫度變成攝 氏700至800度左右）時，以p形摻雜劑亦即Zn予以蒸氣 摻雜之同時繼續成長，同樣地慢慢降低溫度而成長20至 3〇以m左右之p形層3。又，為了要維持南度之發光效果， 該η形層2及p形層3係應分別形成為使其載流子濃度成 5Χ1017至l〇18cm·3左右為宜。 在本例中，形成發光層之半導體積層部4係η形GaP 層2與p形GaP層3之單純的接合構造，但為了要提高 發光特性起見，也可以n +形層，η-形層及p形層之積層 構造構成，或異質結合（heterotype bond)等其他之構造者。 之後，用化學機械式磨光方法（Chemical Mechanical Polish ’以後簡稱為CMP)磨光GaP基板1之背面側，使 LED晶片全體之厚度成為預定之厚度，例如2〇〇至300〆 m左右之厚度。如果LED晶片之厚度無限制，或不會過 度厚時不必磨光，但GaP基板1的結晶性不良而光會衰 減的關係’如果該GaP基板1變薄時’在表面側液相成 長之半導體積層部4之厚度相對地變厚，因而使光重複反 射而有效地輸出光於LED晶片之表面側而較佳。 之後’用真空沈積法形成p側電極6。該p形侧電極 本紙張尺度適用中國國家標準（CNS)A4規格（:210 X 297公釐） 311156 -------------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 4444 1 7 A7 B7 五、發明說明（ό ) 6係如前述由接觸金屬層6a，Mo層6b及Au層6c之三 層構造形成》接觸金屬層6a係以可得到與GaP層之歐姆 接觸之材料’例如Au-Be合金，Au-Be-Ni合金，Au-Zn 合金’ Au-Ni合金等，Au與Bu，Zn，及Ni當中之至少 一種合金’成為厚度500至3000埃左右之膜。Mo層6b 係作為防止GaP層之Ga擴散而柝出於表面側用之阻擋層 者；在本發明t，被選定為防止Ga之擴散之同時在後述 之用鹽酸粗面處理時不會受到鹽酸侵蝕之材料，而製成 1〇〇至3 000埃左右之厚度之臈。製成該程度之厚度之膜 之結果’可作為能夠充分地阻擋Ga擴散之阻擋層。Au 層6c係因為與引線之相容性良好而在電極表面用金線作 引線接合時能夠得到充分之黏接力，而且不受粗面處理用 之里酸侵蝕之材料而被選上，並製成2〇〇〇至12〇〇〇埃左 右厚度之膜》 該等之電極材料係因通常用以輸出從該半導逋積層部 4之表面側所發光之光的關係，使設在半導體積層部4之 表面之一部分成儘量小以避免遮斷該光但仍然要把電流擴 散到晶片全體以期求有效率之發光。關於該局部設置之方 法且使用在要形成電極之部分以外之表面上設光阻等遮膜 之後實行真空沈積之分離法，或用玻璃遮蔽等遮膜覆蓋不 形成電極之部分而只對必要部分被覆電極材料之遮蔽沈積 法等方法。這是因為在成膜之後要形成電路圖案時，必需 要#刻三種金屬而會使蝕刻過程複雜的緣故β 再者，GaP基板1之背面也全面設有電極用金 形 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 311156 (請先閱讀背面之注意事項再填寫本頁) 装----—丨訂·!------線 經濟部智慧財產局員工消費合作社印製 6 經濟部智慧財產局員工消費合作社印製Printed A7 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ------------ V. Description of the Invention (1) [Industrial Use Field] The present invention relates to a green system using GaP compound semiconductors. Manufacturing method of semiconductor light emitting element. More specifically, it is the result of rough surface treatment of the semiconducting wafer with wet etching method, which improves the efficiency of external components and prevents the electrode from being eroded by the treatment solution, and can be fully maintained. A method for manufacturing a semiconductor light-emitting element having an ohmic contact with a semiconductor layer and an electrode with metal wire bonding properties. [Conventional Technology] Conventional semiconductor light-emitting elements using GaP compound semiconductors, as shown in Fig. 2, "e.g., on a semiconducting rhenium substrate 21 formed of an n-shaped Gap" have n-shapes formed of, for example, GaP. The light-emitting layer forming portion 24 is formed by epitaxy of the P-shaped layer 23 formed by the layer 22 and GaP, and pn bonding therebetween. Then, a p-side electrode 26 made of an Au_Be alloy layer 26a, a Ti layer 26b ', and an Au layer 26c is provided on a part of the surface side, and an Au-Be alloy layer is formed on the back side of the semiconductor substrate 21 > The n-side electrode 27 is formed from a wafer. The reason why the P-side electrode 26 on the surface side is locally provided is that the electrode portion blocks light and minimizes the electrode area, so that the current can spread to all areas in the wafer to increase the light output on the surface side. Furthermore, the reason for forming the three-layer structure is that the Au-Be alloy layer 26a of the first layer is to make the ohmic contact with the GaP layer be good, and the intermediate Ti layer 26b is the Au_Be layer of the first layer and the alloyed layer. When Ga of the GaP layer is deposited on the surface of the electrode due to diffusion, the adhesion force of the metal wire bonding is reduced. Therefore, it is necessary to prevent the diffusion and use it as a barrier layer. And 'the third layer of the surface of the eighteenth layer of the 11th layer 2 6c is to mention the gold paper standards apply the national standard (CNS) A4 specifications (21〇X 297 public meals) 311156 --------- ---- Equipment --------- IT --------- line (Please read the precautions on the back before filling in the Intellectual Property Bureau of the Ministry of Economic Affairs employee consumer cooperative print 4444 1 7 A7 ------- B7 V. Description of the invention (2) It is designed for the tightness with metal wires when metal wires such as wires are bonded. It is known that after the wafer is formed, for example, hydrochloric acid treatment is performed to make the semiconductor layer As a result, the exposed surface becomes a rough surface with unevenness, which can improve the effect of external micro-components for outputting light to the outside, especially when the external micro-component is desired to improve the efficiency of rough surface treatment by using a wet etching method such as hydrochloric acid. The problem to be solved] In the past, a semiconductor light-emitting element that grew a GaP layer on a Gap substrate and roughened the exposed surface of the semiconductor layer after wafering was as described above on the surface of the semiconductor layer and the semiconductor substrate. After the electrodes are formed on the back surface, a rough surface treatment is performed by a wet etching method. This is because of the rough surface treatment. It can only be implemented after the dicing of each wafer, and it is more efficient to form the electrode in the state of the wafer 'and if the electrode is formed after the rough surface treatment is performed in the state of the semiconductor wafer, it is not easy to wire bond Identifying the electrode will deteriorate the wire bonding characteristics and increase the resistance to the contact surface. However, when the rough surface is processed by wet etching after the electrode is formed, the electrode will be immersed in the processing solution. When the rough surface is treated with hydrochloric acid, among the p-side electrodes 26 of the three-layer structure described above, the middle Ti layer 26b is eroded by hydrochloric acid. Therefore, the Ti layer 2 6b exposed on the side of the p-side electrode 26 will To be eroded by hydrochloric acid, in order to prevent the Ti layer 26b from being eroded, it is necessary to make the Ti layer 26b extremely thin. As a result, the function as a barrier layer cannot be fully exerted, and there is a problem that the wire bondability is reduced. The reason why the exposed surface is made rough is to prevent the light emitted by the light-emitting layer from repeating total reflection inside the light-emitting element crystal and being absorbed inside, so that light is easily output to the outside. With its depth of bumps II * ί I I-^ 111111 IJ r (Please read the precautions on the back of Jingjing before filling out this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 2 311156 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, “CXS” A {Specifications ⑵〇, 297 A7 B7 V. Description of the invention (3) The reflectance changes, causing external micro-components The efficiency changes greatly. Therefore, when the roughening treatment is performed by adjusting the treatment liquid for roughing treatment to a concentration that does not erode the electrode material, the unevenness of the exposed surface of the semiconductor layer cannot be the most appropriate roughness, which may not sufficiently improve the external The problem of the differential component effect exists. The present invention has been made in view of the above situation, and an object thereof is to provide a rough surface treatment for forming unevenness around a light-emitting element wafer, while providing good ohmic contact, and preventing diffusion of Ga or the like to the electrode surface to improve wire bonding properties. Method for manufacturing an electrode semiconductor light emitting element. [Means to Solve the Problem] The method for manufacturing a semiconductor light emitting device according to the present invention includes the following process: forming a light emitting layer including a formed layer and a P-shaped layer on a surface of a wafer formed of a GaP substrate The semiconductor laminated portion grows epitaxially. One electrode is formed on the surface portion of the semiconductor laminated portion and it can be set on a part of the surface area of each wafer. The other electrode is formed on the back surface of the semiconductor substrate. A semiconductor light-emitting element in which the aforementioned wafer is diced and wafered, and the exposed surface of each semiconductor is roughened; it is characterized by a contact metal layer and a Mo layer and an Au layer that make ohmic contact with the GaP layer. The three-layer structure of the layer forms the electrode of the aforementioned one, and the aforementioned rough surface treatment is performed with hydrochloric acid. Here, the so-called rough-faced processor is specially designed to process irregularities of about 0.1 to 3; czm & > around the exposed surface of the semiconductor layer. The so-called metal contact layer means a metal layer that can be multiplied with the Gap layer to obtain ohmic contact; s; for example, at least one of Au and Be and Zn IN! Can be used 311156 I-I-I-I-I Η — Ί— l— 11— j_ 1-nn 1j n 1 one by one eJ * n II (please read the notes on the back of the book before filling out this page) ^ 444 ^ 444 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (4) Alloyer "The result of using this method 'because the surface-side electrode is formed by a three-layer structure that contacts the metal layer, the Mo layer, and the Au layer, and the chemical acid used to roughen the surface of the semiconductor layer does not Will invade any one of the shaft electrodes. Therefore, Mo can be spread to a thickness of, for example, about 100 to 3000 angstroms, and the diffusion of Ga can be completely prevented as a barrier layer. The surface of the electrode can be maintained by a pure Au layer. Therefore, the adhesion force as a result of wire bonding of a gold wire or the like can be sufficiently ensured. [Forms of Implementing the Invention] The method for manufacturing a semiconductor light-emitting element of the present invention is as shown in the cross-section explanation circle of a semiconductor light-emitting element wafer (hereinafter referred to as an LED wafer) manufactured in one embodiment as shown in FIG. The worm crystals of the semiconductor laminated portion 4 of the light-emitting layer of the n-shaped layer 2 and the p-shaped layer 3 formed by Gap are sequentially grown on the top. The worm crystal system can increase the light output effect by growing each layer to a thickness of about 10 to 100, so when the liquid phase epitaxial growth method is used to grow, a thick and highly crystalline GaP layer can be easily grown. good. Then, one electrode (p-side electrode) 6 is partially formed on the surface of the semiconductor multilayer layer 4 so that it can be provided on one surface area of each wafer, and the other electrode is formed on the back surface of the semiconductor substrate 1 (N-side electrode) 7 β The wafer is then cut into wafers, and the exposed surface of the semiconducting layer 4 of each wafer is treated with a rough surface of hydrochloric acid. The present invention is characterized in that the p-side electrode 6 'is formed by a three-layer structure of a contact metal layer 6a, a Mo layer 6B, and an Au layer 6c in ohmic contact with the GaP layer 3, and the aforementioned rough surface treatment is performed with hydrochloric acid. To form a semi-conducting light-emitting layer made of a GaP layer on a GaP substrate 1 (please read the precautions on the back before filling this page). Ordering country national standard (CNS) A4 specification (21CU 297 mm) 4 311156 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 __________B7____ 5. Description of the invention (5) When the body 4 is epitaxially grown in liquid phase, for example, doping Gap of the η-type dopant The temperature of the boat of the molten η-shaped Ga melt jbl is set to, for example, about 900 to 1000 degrees Celsius', and one side of the GaP substrate 1 is brought into contact with the Ga melt while slowly If the temperature of the Ga melt is lowered, the epitaxial crystals 2 of the n-shaped GaP layer are sequentially grown on the GaP substrate 1 as the temperature decreases. For example, when it grows to a thickness of about 60 to 80 / zm (the growth temperature becomes about 700 to 800 degrees Celsius), the p-type dopant, ie, Zn, is vapor-doped while continuing to grow, and the temperature is slowly lowered. The p-shaped layer 3 is grown by 20 to 30 m. In order to maintain the luminous effect of the south, the η-shaped layer 2 and the p-shaped layer 3 should be formed so that their carrier concentration is about 5 × 1017 to 1018 cm · 3, respectively. In this example, the semiconductor laminated portion 4 forming the light-emitting layer is a simple bonding structure of the η-shaped GaP layer 2 and the p-shaped GaP layer 3. However, in order to improve the light-emitting characteristics, an n + -shaped layer and an η-shaped layer may be used. Layers and p-shaped layers, or other structures such as heterotype bonds. After that, the back side of the GaP substrate 1 is polished by a chemical mechanical polishing method (hereinafter referred to as CMP), so that the thickness of the entire LED chip becomes a predetermined thickness, for example, about 200 to 300 μm. . If the thickness of the LED chip is not limited, or if it is not too thick, it is not necessary to polish, but the relationship between the poor crystallinity of the GaP substrate 1 and the attenuation of light 'if the GaP substrate 1 becomes thin' Since the thickness of the build-up portion 4 is relatively thick, it is preferable to repeatedly reflect light and efficiently output light to the surface side of the LED chip. After that, the p-side electrode 6 is formed by a vacuum deposition method. The paper size of the p-shaped side electrode is applicable to the Chinese National Standard (CNS) A4 specification (: 210 X 297 mm) 311156 ------------- Installation -------- Order- -------- Line (Please read the precautions on the back before filling this page) 4444 1 7 A7 B7 V. Description of the invention (ό) 6 is as described above by contacting the metal layer 6a, Mo layer 6b and Au layer The formation of the three-layer structure of 6c "The contact metal layer 6a is a material that can obtain ohmic contact with the GaP layer, such as Au-Be alloy, Au-Be-Ni alloy, Au-Zn alloy, Au-Ni alloy, etc. At least one alloy of Bu, Zn, and Ni 'becomes a film having a thickness of about 500 to 3000 angstroms. The Mo layer 6b is a barrier layer for preventing Ga diffusion of the GaP layer from being used on the surface side. In the present invention t, it is selected to prevent Ga diffusion and is not subjected to hydrochloric acid when it is treated with a rough surface of hydrochloric acid as described later. Eroded material, and made into a thickness of about 100 to 3,000 angstroms. As a result, a film having such a thickness can be used as a barrier layer capable of sufficiently blocking Ga diffusion. The Au layer 6c is selected because of its good compatibility with the lead wire, which can obtain sufficient adhesion when gold wire is used for wire bonding on the electrode surface, and is not attacked by the acid that is used for rough surface treatment. Films having a thickness of about 2000 to 120,000 angstroms "These electrode materials are usually provided in the semiconductor laminated portion because of the relationship between light emitted from the surface side of the semiconducting laminated portion 4 A part of the surface of 4 is made as small as possible to avoid blocking the light but still spread the current to the entire chip in order to achieve efficient light emission. As for the partial installation method, a separation method in which vacuum deposition is performed after a mask such as a photoresist is provided on a surface other than the portion where the electrode is to be formed, or a portion such as glass shielding is used to cover the portion where the electrode is not formed and only the necessary portion A method of covering the electrode material by a shadow deposition method. This is because when the circuit pattern is to be formed after film formation, #etching of three metals is necessary to complicate the etching process. Β Furthermore, the back of GaP substrate 1 is also fully equipped with gold for electrodes. This paper is suitable for Chinese countries. Standard (CNS) A4 specification (210 X 297 public love) 311156 (Please read the precautions on the back before filling out this page) Installation ----—— 丨 Order ·! ------ Staff of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by Consumer Cooperatives 6 Printed by Consumers' Cooperatives, Bureau of Intellectual Property, Ministry of Economic Affairs
AT -------B7 五、發明說明（7 ) "" ' ~~ 成η側電極7 ’並經切割而予以晶片化。 其次，將切割之晶片浸潰於濃度1〇至35重量％之 溶液".5至5分左右’而在晶片之表面形成如第I圖所 示之…使半導體層之露出面成為粗糙面。該粗輪面之 程度係形成為以凹凸之高低差在01至3//111左右為宜， 而以1至2em左右時，對輸出光於表面側實有利而較佳 (可將向側面出射之光向表面反射而利用）。欲把Gap層之 露出面形成該粗糙度時，前述濃度之鹽睃最為合適。濃度 過濃’或不足時難以控制表面粗糙度。又，其他之氣酸或 硫酸實行粗面處理時因表面粗糙度不足而不宜。實行該鹽 酸之粗面處理時’因為半導體層以外之部分露出之電極金 屬係屬於前述之構成，因此該等電極材料均不會被鹽酸浸 餘。換s之’選擇用以形成粗糙面之處理液及電極材料時， 使露出於晶片外周之GaP半導體廣之表面成為粗糙面之 條件及使電極材料不會被侵蝕之條件能夠一致者。 根據本發明’在形成電極之後積層GaP之半導體積 層部之露出面’用鹽酸施行粗面處理的關係，電極表面無 凹凸不會降低引線接合時之辨認性之同時，可抑制LED 晶片之表面及側壁之全反射’可加大向外部取出光的比 率。結果’大幅地提高外部微分量子效果，可製造亮度高 的半導體發光元件。而且’用Mo構成電極材料之阻擔層 之同時’用鹽睃溶液實行粗面處理的關係，Mo完全不會 被鹽酸侵#’而露出在電極之側面也不會被侵姓。因此， 形成為可發揮阻擋層功能之100至3 000埃之足夠厚度， -------------裝--------訂---------線 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用肀囤國家禕準（CKS)A.l規格（210 X :297公.¾ ) 7 311156 4444 17 A7 B7 五、發明說明（8 ) 可完全防止Ga之擴散，能夠大大地提高引線接合特性。 又，接觸金屬層也含有Au合金，完全不會被鹽酸侵蝕， 與GaP層之歐姆特性也良好而電阻低，可製造動作電壓 低的半導體發光元件。 [發明之效果] 根據本發明，形成電極之後用鹽酸實行粗面處理時電 極材料不會被侵蝕，可得到可靠性非常高的電極之同時， 可提高引線接合特性。而且，在鹽酸處理後不必形成電極， 可用晶圓之狀態形成電極，可用如同以往之簡單製程來製 造。結果’能以非常低廉的價格製造發光特性優良而效率 高，且可靠性高的半導體發光元件。 [圖式之簡單說明】 第1圖係表示用本發明之製造半導體發光元件方法之 一實施形態所製成之LED晶片之剖面說明圖。 第2圖係用以說明以往之LED晶片之剖面構造之圖。 [圖號之說明] (請先閱讀背面之注咅？事項再填寫本頁) · 裝--------訂---------線 經濟部智慧財產局員工消费合作杜印製 1 GaP基板 2 η形GaP層 3 ρ形GaP層 4 半導趙積層部 6 P側電極 6a 接觸金屬層 6b Mo層 6c Au層 7 η側電極 本紙張尺度適用中國國家標準（CNS)A4规格（210 X 297公釐AT ------- B7 V. Explanation of the invention (7) " " '~~ Form n-side electrode 7' and cut into wafers. Next, the diced wafer is immersed in a solution having a concentration of 10 to 35% by weight "about 5 to 5 minutes" to form a surface of the wafer as shown in Fig. I. The exposed surface of the semiconductor layer becomes a rough surface. . The degree of the rough wheel surface is preferably formed in such a way that the height difference of the unevenness is about 01 to 3 // 111, and when it is about 1 to 2em, the output light is beneficial to the surface side and is better (the light can be emitted to the side surface) The light is reflected toward the surface and used). When it is desired to form the roughness of the exposed surface of the Gap layer, the salt concentration of the foregoing concentration is most suitable. When the concentration is too thick 'or insufficient, it is difficult to control the surface roughness. In addition, it is not suitable for rough surface treatment of other gas acids or sulfuric acid due to insufficient surface roughness. When the rough surface treatment of the hydrochloric acid is performed, the electrode materials exposed outside the semiconductor layer belong to the aforementioned structure, and therefore, these electrode materials are not immersed in hydrochloric acid. In other words, when the treatment liquid and electrode material used to form the rough surface are selected, the conditions under which the wide surface of the GaP semiconductor exposed on the outer periphery of the wafer becomes a rough surface and the conditions under which the electrode material will not be corroded can be consistent. According to the relationship that the exposed surface of the semiconductor laminated portion where GaP is laminated after the electrode is formed according to the present invention is subjected to a rough surface treatment with hydrochloric acid, no unevenness on the electrode surface does not reduce the visibility at the time of wire bonding, and the surface of the LED chip and the wafer can be suppressed. The total reflection of the side wall can increase the ratio of taking out light to the outside. As a result, the external micro-component effect is greatly improved, and a semiconductor light-emitting device having high brightness can be manufactured. In addition, the relationship of "while forming the barrier layer of the electrode material with Mo" is to perform a rough surface treatment with a salt solution, and Mo will not be attacked by hydrochloric acid at all, and will not be exposed to the side of the electrode. Therefore, it is formed to have a sufficient thickness of 100 to 3,000 angstroms to function as a barrier layer, ------------- install -------- order -------- -Line (Please read the precautions on the back before filling this page) This paper size is applicable to the national standard (CKS) Al specification (210 X: 297 male. ¾) 7 311156 4444 17 A7 B7 V. Description of the invention (8 ) Can completely prevent the diffusion of Ga, can greatly improve the wire bonding characteristics. In addition, the contact metal layer also contains an Au alloy, which is not corroded by hydrochloric acid at all, and has good ohmic characteristics with the GaP layer and low resistance, so that a semiconductor light emitting device having a low operating voltage can be manufactured. [Effects of the Invention] According to the present invention, the electrode material is not corroded when a rough surface treatment is performed with hydrochloric acid after the electrode is formed, and a highly reliable electrode can be obtained while improving the wire bonding characteristics. Moreover, it is not necessary to form an electrode after the hydrochloric acid treatment, and the electrode can be formed in a wafer state, and can be manufactured by a simple process as in the past. As a result, a semiconductor light-emitting element having excellent light-emitting characteristics, high efficiency, and high reliability can be manufactured at a very low price. [Brief description of the drawings] Fig. 1 is a cross-sectional explanatory view showing an LED wafer manufactured by one embodiment of the method for manufacturing a semiconductor light emitting device according to the present invention. FIG. 2 is a diagram for explaining a cross-sectional structure of a conventional LED chip. [Explanation of the drawing number] (Please read the note on the back? Matters before filling out this page) Du printed 1 GaP substrate 2 η-shaped GaP layer 3 ρ-shaped GaP layer 4 Semiconductor layer 6 P-side electrode 6a Contact metal layer 6b Mo layer 6c Au layer 7 η-side electrode This paper is applicable to Chinese National Standards (CNS) A4 size (210 X 297 mm
S 311156S 311156