4443 74 A7 B7 經"部中央標卒局兵工消费合作社卬來 五、發明説明（1 ) 本發明有關於積體電路之晶圓處理，且特別有關於晶 圊之沾錫金屬（UBM，Under Bali Metallurgy)佈局。 傳統晶圓皆設置接線塾（bond pad)，以與外部電路形 成電連接。為使接線塾之間具有足夠的距離使晶圓表面長 錫球的製程得到最大的製程良率，接線墊須進一步透過輸 入/輸出重新分佈（I/O rerouting)處理，以電連接至特定 困案之沾錫金屬，此沾錫金屬可使錫球融接於晶圓表面並 形成面矩陣排列的圖樣。 圖1顯示習知沾錫金屬佈局之示意剖面圖。晶圓⑽上 設置接線墊(11)，於整個晶圓⑽上塗佈例如聚醯亞胺 (polyimide)之介電層⑽，此介電層⑽上形成預定圖案之金 屬層⑽’此金屬層(13)可為鋁，且金屬層⑽與接線墊⑼電連 接。接著，塗佈例如聚醯亞胺之介電層(14)，於其上形成預 定囷案之金屬摩⑽’與金屬層(13)電連接，作為連接銲錫球 之沾錫金屬，此沾錫金屬可為鉻及銅合金。於形成金屬層 ⑽之過程中，係以光阻去除劑（ph〇t〇reSist_stripper)將 ΐ占錫金屬間之光阻層⑽全部掀除（lift off)。由於光阻層 ⑽覆蓋沾踢金屬以外之大部分區域，因此將光阻層㈣掀除 所需之時間很長，一般約需2至3小時，此使得產量不易 提高。 有鐘於此’本發明爰提供一種巧妙解決之道，可大量 減少掀除:C阻所需之時間。依據本發明之一較佳實施例之 沾錫金属佈局方法’係於晶圓之接線墊上形成第一預定圖 案之第一金屬層’與接線墊電連接；以及於第一金屬層上 本紙張尺度適用中國阃家標牟（CNS ) A4規格（210X29?公楚） I -- I-----^----一裝 — I (請先閱讀.背面之注意事項再填寫本頁) -β i" 五 、發明説明（ Α7 Β7 經漪部中央標準局負工消費合作社印？4 形成第二預定圖案之第二金屬層及第三預定圖案之第三金 屬層，第二金屬屑電連接至第一金屬層，用作為連接銲錫 球之沾錫金屬’第三金屬層佔據第二金屬層以外之大部分 區域，但至少與第二金屬層間隔一距離，以免接觸銲錫 球上述本發明方法可使得沾錫金屬間之光阻僅覆蓋少許 區域’換言之，只有很少區域需要掀除，而且光阻去除劑 可從較多方向摻入’因此可有效縮短光阻掀除時問β 另’上述第三金屬層可規劃為電連接至接地之接線 整· ’而具有屏蔽雜訊之功能。 為能更清楚瞭解本發明上述及其他特徵及優點，現配 合後附圖式進一步說明如下，其中： 圓1係習知沾錯金屬佈局之示意剖面圖。 囷2係依據本發明之一較佳實施例之沾錫金屬佈局之 示意剖面圖。 圓3Α及3Β係依據本發明之另一較佳實施例之沾錫金 屬佈局之示意剖面圖》 於圖2中，顯示依據本發明之一較佳實施例之沾錫金 屬佈局之示意剖面圖。晶圓⑽上設置接線墊(21)，於整個晶 圓⑽上塗佈例如聚醯亞胺之介電層⑽，此介電層⑽上形成 預定囷案之金屬層⑽，金屬層⑽可為鋁，且金屬層(23)電連 接至接線墊(21)。然後，塗佈例如聚醯亞胺之介電層(24)，於 其上形成不同預定圖案之金屬層⑽及金屬層⑶），金屬層⑽ 可為鉻及銅合金，且金屬層⑽與金屬層(23)電連接，用作為 連接銲錫球之沾錫金屬，金屬層(27)可為鉻及銅合金，金屬 -4- 本紙掁尺度適用中國國家梯準（CNS > Λ4规格（2】0X297公嫠） (請先閱讀背面之注項再填寫本萸) -WI裝 訂 4443 74 A7 B7___ 五、發明説明（3 ) 廣(27)佔據金屬層⑽之以外之大部分區域，但至少與金屬層 (26)間隔一距離D，一般可為150微米（μπ〇，以免接觸與 金屬層⑽沾錫金屬連接之銲錫球，且金屬層⑼未與金屬層 (2¾電連接而為浮接狀態》此使得欲移除之光阻㈣僅覆蓋小 部分區域’並且光阻去除劑可從多個方向捧入，故可非常 快速地掀除光阻©，實驗顯示僅需約20分鐘。 圖3A及3B顯示依據本發明另一較佳實施例之沾錫金 属佈局之示意剖面囷。此實施例大部分相同於圖2所顯示 者，唯一差異為圖3A相對於圖2金屬層(27)之金屬層(33)係 經由金屬層(32)而電連接至接線墊(31)。若接線墊(31)接地，則 金屬層(3¾可作為防止雜訊干擾之屏蔽層。另，囷3B顯示 圖3Α中之光阻〇4)已掀除，且銲錫球(35)已連接至沾錫金 屬。 雖已參照上述較佳實施例詳細描述本發明，然熟習此 技術人士在不偏離後附申請專利範圍之範疇下可據以為其 他變化、修飾及改變。 經满部中央標半局只工消f合作.=f.i印絮 本紙張尺度適用中國國家榇半（CNS > A4規格（210X297公釐}4443 74 A7 B7 The Ministry of Central Standardization Bureau Military Industrial Cooperatives Co., Ltd. V. Description of the invention (1) The present invention relates to wafer processing of integrated circuits, and particularly to crystal-coated tin metal (UBM, Under Bali Metallurgy) layout. Conventional wafers are provided with a bond pad to form an electrical connection with an external circuit. In order to have sufficient distance between the wiring pads to maximize the process yield of the long solder balls on the wafer surface, the wiring pads must be further processed through I / O rerouting to electrically connect to specific This is a tin-dipped metal, which can make the solder balls melt on the surface of the wafer and form a pattern of surface matrix arrangement. FIG. 1 shows a schematic cross-sectional view of a conventional tin-plated metal layout. A wiring pad (11) is provided on the wafer ⑽, and a dielectric layer 例如, such as polyimide, is coated on the entire wafer ⑽, and a metal layer of a predetermined pattern is formed on the dielectric layer ⑽. (13) It may be aluminum, and the metal layer ⑽ is electrically connected to the wiring pad ⑼. Next, a dielectric layer (14) such as polyimide is coated, and a predetermined metal bump is formed thereon to be electrically connected to the metal layer (13). Metals can be chromium and copper alloys. In the process of forming the metal layer ⑽, all the photoresist layers ΐ between the tin-to-tin metal are lifted off with a photoresist remover (phοtοreSist_stripper). Since the photoresist layer ⑽ covers most of the area other than the metal, it takes a long time to remove the photoresist layer 一般, which usually takes about 2 to 3 hours, which makes it difficult to increase the yield. Here is where the present invention provides an ingenious solution that can greatly reduce the time required to lift off: C resistance. According to a preferred embodiment of the present invention, a tin-impregnated metal layout method 'forms a first metal layer having a first predetermined pattern on a wiring pad of a wafer' and electrically connects the wiring pad; and the paper size on the first metal layer Applicable to China's Standard House (CNS) A4 specification (210X29? Gongchu) I-I ----- ^ ---- One Pack — I (Please read first. Please note on the back before filling this page)- β i " V. Description of the invention (Α7 Β7 Printed by the Central Bureau of Standards of the Ministry of Work and Consumer Cooperatives? 4 Form a second metal layer with a second predetermined pattern and a third metal layer with a third predetermined pattern, and the second metal chip is electrically connected To the first metal layer, the third metal layer is used as a soldered metal to connect the solder balls. The third metal layer occupies most of the area except the second metal layer, but at least a distance from the second metal layer, so as not to contact the solder balls. It can make the photoresist between tin-coated metals cover only a few areas. In other words, only a few areas need to be removed, and the photoresist remover can be incorporated from more directions. The third metal layer can be planned It has the function of shielding noise for the electrical connection to the ground connection. In order to understand the above and other features and advantages of the present invention more clearly, the following attached drawings are further described below, of which: Circle 1 Schematic cross-sectional view of a staggered metal layout. 囷 2 is a schematic cross-sectional view of a tin-plated metal layout according to a preferred embodiment of the present invention. Circles 3A and 3B are tin-plated metal layouts according to another preferred embodiment of the present invention. Schematic cross-sectional view "Fig. 2 shows a schematic cross-sectional view of a tin-impregnated metal layout according to a preferred embodiment of the present invention. A wiring pad (21) is provided on the wafer stack, and the entire wafer stack is coated with, for example, Polyimide dielectric layer ⑽. A predetermined metal layer 形成 is formed on the dielectric layer ⑽. The metal layer ⑽ may be aluminum, and the metal layer (23) is electrically connected to the wiring pad (21). A cloth such as a polyimide dielectric layer (24) on which a metal layer ⑽ and a metal layer ⑶ of different predetermined patterns are formed. The metal layer ⑽ may be a chromium and copper alloy, and the metal layer ⑽ and the metal layer (23 ) Electrical connection, used to connect solder balls to tinned metal, gold Layer (27) can be chrome and copper alloy, metal -4- paper size is applicable to China National Standard (CNS > Λ4 specification (2) 0X297 cm) (please read the note on the back before filling in this note)- WI binding 4443 74 A7 B7___ V. Description of the invention (3) Wide (27) occupies most of the area outside the metal layer ⑽, but at least a distance D from the metal layer (26), generally 150 microns (μπ0, So as not to contact the solder balls connected to the metal layer ⑽ and the tin metal, and the metal layer ⑼ is not electrically connected to the metal layer (2¾ is in a floating state). This makes the photoresist to be removed cover only a small area and the photoresist The remover can be pulled in from multiple directions, so the photoresist © can be lifted very quickly. Experiments show that it only takes about 20 minutes. Figures 3A and 3B show a schematic cross section 囷 of a tin dip metal layout according to another preferred embodiment of the present invention. This embodiment is mostly the same as that shown in FIG. 2 except that the metal layer (33) of FIG. 3A relative to the metal layer (27) of FIG. 2 is electrically connected to the wiring pad (31) through the metal layer (32). If the wiring pad (31) is grounded, the metal layer (3¾ can be used as a shielding layer to prevent noise interference. In addition, 囷 3B shows that the photoresistance in Figure 3A is removed), and the solder ball (35) is connected to Dipped in tin metal. Although the present invention has been described in detail with reference to the above-mentioned preferred embodiments, those skilled in the art can make other changes, modifications, and alterations without departing from the scope of the appended patent application. After the Ministry of Central Standards and Standards Bureau, only the f cooperation is eliminated. = F.iPrinting This paper size is applicable to the Chinese national standard (CNS > A4 size (210X297 mm)