4442 9 Ο Α7 經濟部中央標準局員工消費合作杜印製 Β7五、發明説明（1 ) 本發明是有關於一種晶圓（wafer)的清洗方法及裝置， 特別是有關於半導體裝置製程中，可將晶圓確實清洗乾淨 的晶圓清洗方法及裝置。 半導體裝置製造前，首先必須在晶圓邊緣刻以例如批 號等若干記號，所採用的方式為雷射光束刻印法（Laser beam mark)。由於雷射刻印後會產生大量的雜質粒子 (particle)，而為了清洗雜質粒子，所以採用清洗效率極高 的超高音波振盪（megasonic)方式，並將晶圓置於適當的溶 液中振盪掉雜質粒子。通常採用例如NH4OH:H202:H20等 於1:1:4的混合溶液將晶圓置於其中振盪數分鐘D經過超 高音波振堡清洗的晶圓，必須清洗乾淨，否則會產生後續 熱製程所形成的熱氧化層（thermal oxide layer)產生變色現 象。故習知技術將經超高音波振盪後的晶圓移至去離子水 清洗槽清洗多次，接著利用含有HPM的溶液加以清洗。其 中HPM具有中和NH4OH的作用。亦即，請參照第1圖所 示之習知晶圓雷射刻印後，形成熱氧化層前的清洗步驟之 流程圖。流程圖包括「晶圓雷射刻印」、「超高音速振盪 清洗」、「以25 °C水清洗5分鐘共三次j、以及「以含 HPM的溶液清洗」的步驟。然後，將晶圓送至熱氧化製程， 以形成熱氧化層。 第2圖為顯示習知晶圓清洗的裝置，符號20代表清洗 槽，清洗槽20内部包含有用以置放晶圓10的卡槽26，並 且具有一供清洗水進入的開口 24。去離子水由管路27通 過閥，再經由開口 24進入清洗槽20内。在清洗槽20内的 --------^-- - _ (請先聞讀背面之注意事項再填寫本頁) 訂 本紙張尺度適用中固國家標準（CNS) A4規格（210X297公釐） 經濟部中央標準局員工消費合作社印装 4442 9 0 五、發明说明（2 ) 清洗水8清洗晶圓經過5分鐘後，由圖未顯示的排出口排 出，再重新送入新的去離子水清洗重複三次。 然而，上述習知晶圓清洗裝置及方法，經過多次室溫 •去離子水清洗、再經過HPM的中和清洗後，移至熱氧化製 程，以形成熱氧化層，以上述習知清洗方法，對防止熱氧 化層變色雖有助益，然而，額外的HPM清洗會增加清洗機 台的負擔，並且需增加化學藥品的用量。有鑑於此，本發 明的目的為提供一種晶圓清洗方法及裝置，不需增加清洗 機台的負擔，即可確實清洗掉超高音波振盪後所殘留的化 學物質，使熱氧化層不產生變色現象β 根據上述目的，本發明提供一種晶圓清洗的裝置，適 用於雜質粒子之超高音波振盪清洗後的晶圓清洗，包括： 一清洗槽，其内部包含用以置放晶圓的卡槽，並且具有供 清洗水進入的開口；以及一加熱裝置，用以將清洗水加熱 升溫，而經由該開口將升溫後的清洗水送入該清洗槽，以 清洗晶圓。 根據上述目的，本發明提供另一種晶圓清洗的裝置， 適用於雜質粒子之超高音波振盪清洗後的晶圓清洗，包 括：（a)—清洗槽，其内部包含用以置放晶圓的卡槽，並且 具有供清洗水進入的開口；（b)—加熱裝置，用以將清洗水 加熱；（c)一溫度感測器，用以檢測出上述清洗槽中清洗水 的溫度’而送出一溫度訊號；（d)—加熱裝置控制器，其設 定預定的溫度，並且接收上述溫度訊號，然後與該預定的 溫度比較，當上述溫度訊號高於該預定的溫度時，送出一 本紙張尺度適用中國國家標準（CNS ) a4洗格（210ΧΜ7公楚） {請先閱讀背面之注意事項再填寫本頁) '1Τ 經濟部中央標率局員工消費合作社印裝 4442 9 Ο Α7 Β7五、發明説明（3 ) 停止加熱訊號至該加熱裝置，當上述溫度訊號低於該預定 的溫度時，送出開始加熱訊號至該加熱裝置；以及（e)—空 氣閥，可選擇經過該加熱裝置升溫之清洗水或是未經過該 加熱裝置升溫之清洗水，而經由該開口進入該清洗槽内。 根據上述目的，本發明提供一種晶圓清洗的方法，適 用於雜質粒子之超高音波振盪清洗後的晶圓清洗，包括下 列步%: (a#經過超高音波振盪清洗後的晶圓以升溫至預 定溫笑\ git水清洗；以及（b)利用室溫之清洗水複數次清 洗上述晶圓。 上述晶圓清洗的方法，其中該超高音波振盪清洗係採 用NH40H:H202:H20等於1十4的溶液，在約45°c下進行。 上述晶圓清洗的方法，其中步驟（a)以及（b)該清洗水係 去離子水。 上述晶圓清洗的方法，其中該預定溫度大約介於 45-55 〇C。 上述晶圓清洗的方法，其中步驟（a)的清洗時間約為3 分鐘。 上述晶圓清洗的方法，其中該步驟（b)係以清洗水清洗 5分鐘，共三次 為了讓本發明之上述目的、特徵、和優點能更明顯易 懂，下文特舉一較佳實施例，並配合所附圖式，作詳細說 明如下： 圖式之簡單說明： 第1圖為習知晶圓雷射刻印後，形成熱氧化層前的清 (請先閱讀背面之注意事項再填寫本頁) 裝 本紙張尺度適用中國國家標準（CNS ) A4規格（210Χ297公釐） 4442 9 Ο Α7 ____Β7 五、發明説明（4) 洗步驟之流程圖。 第2圖為習知晶圓清洗槽之正面剖面圖。 第3圖為本發明實施例晶圓雷射刻印後，形成熱氧化 層前的清洗步驟之流程圖。 第4圖為本發明實施例晶圓清洗槽之正面剖面圖。 實施例 以下利用第3圖，以及第4圖說明本發明較佳實施例。 第3圖為本發明實施例晶圓雷射刻印後，形成熱氧化層前 的清洗步驟之流程圖。第4圖為本發明實施例晶圓清洗槽 之正面剖面圖β 經濟部中央標準局負工消費合作社印製 第4圖為顯示本實施例晶圓清洗的裝置，符號2〇代表 清洗槽’清洗槽20内部包含有用以置放晶圓10的卡槽 26 ’並且具有一供清洗水進入的開口 24。在清洗槽20壁 面設有溫度感測器22,22 »用以檢測容納於清洗槽20内部 之清洗水50的溫度，並且送出溫度訊號s，s，至加熱裝置 控制器’而加熱裝置控制器設定於例如50 °C的預定溫度， 然後判定接收的溫度訊號S，S低於或高於50 °C，若溫度訊 號S，S顯示清洗槽20内溫度高於50 t：，則送出一停止加 熱訊號T1至加熱裝置，若低於50 則送出一開始開熱訊 號T2於加熱裝置。藉此，經由開口 24進入清洗槽20的清 洗水維持一定的溫度。而空氣閥可選擇經過加熱裝置升溫 的清洗水，或是未經過加熱裝置升溫的室溫清洗水，而經 由開口 24進入清洗槽20。閥控制器以電氣方式與空氣閥 連接，其目的在於控制空氣閥，而視高溫清洗步驟，或是 本紙張尺度適用中國國家標準（CNS ) Α4規格（2丨ΟΧ297公釐） 經濟部中央標準局員工消費合作社印製 -4442 9 0 A7 B7 五、發明说明（5 ) 室溫清洗步驟，使空氣閥選擇由管路36供給的升溫清洗水 通過，或是選擇由管路34供給的室溫清洗水通過。管路 30則是供室溫去離子清洗水進入的管路。 第3圖的流程圖包括「晶圓雷射刻印」、「超高音速 振盈清洗」、「以50 C水清洗3分鐘」、以及「以25 °C 水清洗5分鐘共三次」的步驟。 其中「晶圓雷射刻印」是在晶圓形成熱氧化層之前， 以雷射光束方式刻印批號等記號於晶圓邊緣的步驟，因雷 射刻印會殘留大量的雜質粒子，故接下來以清我率 極高的超高音波振盪方式在液 中，以約45 °C的溫度進行清洗。然後再將晶圓10移至上 述晶圓清洗裝置内部的卡槽26中，並且將經過加熱裝置加 熱至50 °C的去離子水，經由空氣閥以及開口 24進入清洗 槽20内’將晶圓清洗約3分鐘。其次，將上述50 °C清洗 水由圖未顯示的排出口排出清洗槽20外部，然後將室溫 (約25 °C )的去離子水由管路34經由空氣閥以及開口 24進 入清洗槽20 ’以清洗晶圓1〇約5分鐘，而去除殘留的物 質’並且重複清洗三次。此時晶圓完成清洗步驟。然後將 晶圓移至後續的熱氡化製程，以形成熱氡化層。 發明特徵及效果 本發明所提供的晶圓清洗的方法及裝置，藉由加熱裝 置將清洗水升溫至50eC以清洗晶圓10，然後在同一裝置 以室溫清洗水重複清洗晶圓1〇。可確實清洗掉前述超高音 波振盪法所形成殘留的NH4OH與H2〇2等化學物質。其可 本紙張尺度相中關家標準（CNS)从驗（2削297公着） {請先閱讀背面之注意事項再填寫本頁} 袈·4442 9 〇 Α7 Consumption cooperation by employees of the Central Bureau of Standards, Ministry of Economic Affairs, printed by B7. V. Description of the invention (1) The present invention relates to a method and device for cleaning wafers, and particularly to semiconductor device manufacturing processes. Wafer cleaning method and device for surely cleaning a wafer. Before manufacturing a semiconductor device, a number of marks, such as a lot number, must be engraved on the edge of the wafer first. The method used is laser beam marking. Since laser marking will generate a large number of impurity particles, and in order to clean the impurity particles, a megasonic method with extremely high cleaning efficiency is used, and the wafer is placed in an appropriate solution to shake off the impurities. particle. Usually, for example, a mixed solution of NH4OH: H202: H20 equal to 1: 1: 4 is used to place the wafer in it for several minutes. D Wafers that have been cleaned by ultra-high-frequency sonic cleaning must be cleaned, otherwise it will be formed by subsequent thermal processes The thermal oxide layer produces discoloration. Therefore, the conventional technique moves the wafer after ultra-high-frequency oscillation to a deionized water cleaning tank for cleaning multiple times, and then uses a solution containing HPM to clean it. Among them, HPM has the function of neutralizing NH4OH. That is, please refer to the flowchart of the cleaning steps before forming the thermal oxide layer after the conventional wafer laser marking shown in FIG. 1. The flow chart includes the steps of "wafer laser marking", "ultrasonic oscillating cleaning", "washing with 25 ° C water for 5 minutes three times," and "cleaning with HPM-containing solution" steps. Then, the wafer is sent to a thermal oxidation process to form a thermal oxidation layer. FIG. 2 shows a conventional wafer cleaning device. The symbol 20 represents a cleaning tank. The cleaning tank 20 contains a holding slot 26 for holding the wafer 10 and has an opening 24 for cleaning water to enter. The deionized water passes the valve through the pipeline 27, and then enters the cleaning tank 20 through the opening 24. -------- ^--_ in the cleaning tank 20 (Please read the precautions on the back before filling in this page) The size of the paper applies to the China National Standard (CNS) A4 specification (210X297) PCT) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 4442 9 0 V. Description of the Invention (2) Washing water 8 After the wafers have been cleaned for 5 minutes, they are discharged from a discharge port not shown in the figure and re-sent into new deionization Water washing was repeated three times. However, the above-mentioned conventional wafer cleaning apparatus and method are moved to the thermal oxidation process after being cleaned by room temperature and deionized water for several times, and then neutralized and cleaned by HPM to form a thermal oxidation layer. Although preventing the thermal oxidation layer from discoloring is helpful, however, additional HPM cleaning will increase the burden on the cleaning machine and increase the amount of chemicals. In view of this, the object of the present invention is to provide a wafer cleaning method and device, without increasing the burden on the cleaning machine, it can surely clean out the chemical substances remaining after ultra-high-frequency oscillation, so that the thermal oxidation layer does not change color. Phenomenon β According to the above object, the present invention provides a wafer cleaning device, which is suitable for wafer cleaning after ultra-high-frequency oscillating cleaning of impurity particles, including: a cleaning tank, which includes a card slot for placing a wafer therein; And has an opening through which the cleaning water enters; and a heating device for heating and heating the cleaning water, and sending the heated cleaning water to the cleaning tank through the opening to clean the wafer. According to the above purpose, the present invention provides another wafer cleaning device, which is suitable for wafer cleaning after ultra-high-frequency oscillating cleaning of impurity particles, including: (a) a cleaning tank, which contains The card slot has an opening for the washing water to enter; (b) a heating device for heating the washing water; (c) a temperature sensor for detecting the temperature of the washing water in the washing tank; A temperature signal; (d) a heating device controller that sets a predetermined temperature and receives the temperature signal and compares it with the predetermined temperature; when the temperature signal is higher than the predetermined temperature, a paper size is sent out Applicable to Chinese National Standard (CNS) a4 Washing (210 × 7). {Please read the notes on the back before filling out this page.) '1T Printed by the Central Consumer Bureau of the Ministry of Economic Affairs Consumer Cooperatives 4442 9 Α7 Β7 V. Description of the invention (3) stop heating signal to the heating device, and when the temperature signal is lower than the predetermined temperature, send a heating start signal to the heating device; and (e)-an air valve, which can The washing water heated by the heating device or the washing water not heated by the heating device is selected and entered into the washing tank through the opening. According to the above object, the present invention provides a wafer cleaning method, which is suitable for wafer cleaning after ultra-high-frequency oscillating cleaning of impurity particles, including the following steps: (a # Wafer after ultra-high-frequency oscillating cleaning is heated to Scheduled warm smile \ git water cleaning; and (b) cleaning the wafer a plurality of times with room temperature washing water. The wafer cleaning method described above, wherein the ultra-high-frequency oscillating cleaning system uses NH40H: H202: H20 equal to 1/10 The solution is carried out at about 45 ° C. In the above wafer cleaning method, wherein steps (a) and (b) the cleaning water is deionized water. In the above wafer cleaning method, the predetermined temperature is about 45 ° -55 ℃. The above wafer cleaning method, wherein the cleaning time of step (a) is about 3 minutes. The above wafer cleaning method, where the step (b) is cleaning with washing water for 5 minutes, three times in total. The above-mentioned objects, features, and advantages of the present invention can be more clearly understood. A preferred embodiment is described below in detail with the accompanying drawings as follows: A brief description of the drawings: FIG. 1 is a conventional wafer mine Shoot After the thermal oxide layer is formed (please read the precautions on the back before filling this page) The size of this paper is applicable to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) 4442 9 〇 Α7 ____ Β7 5. Description of the invention ( 4) Flow chart of cleaning steps. Figure 2 is a front cross-sectional view of a conventional wafer cleaning tank. Figure 3 is a flowchart of cleaning steps before forming a thermal oxide layer after wafer laser marking according to an embodiment of the present invention. The figure is a front cross-sectional view of a wafer cleaning tank according to an embodiment of the present invention. Embodiments The following uses FIG. 3 and FIG. 4 to describe a preferred embodiment of the present invention. FIG. Flow chart of the cleaning steps before forming the thermal oxidation layer. Figure 4 is a front cross-sectional view of the wafer cleaning tank according to the embodiment of the present invention. Β Printed by the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. The cleaning device, symbol 20 represents a cleaning tank. The cleaning tank 20 contains a clamping slot 26 for holding the wafer 10 therein and has an opening 24 for cleaning water to enter. A temperature sensor is provided on the wall surface of the cleaning tank 20 22,22 »It is used to detect the temperature of the washing water 50 contained inside the washing tank 20, and sends a temperature signal s, s to the heating device controller ', and the heating device controller is set to a predetermined temperature of, for example, 50 ° C, and then determines the received The temperature signal S, S is lower or higher than 50 ° C. If the temperature signal S, S indicates that the temperature in the cleaning tank 20 is higher than 50 t :, a stop heating signal T1 is sent to the heating device, and if it is lower than 50, a 1 Start to turn on the heating signal T2 in the heating device. By this, the washing water entering the washing tank 20 through the opening 24 maintains a certain temperature. The air valve can choose the washing water heated by the heating device or the room temperature without the heating device. The washing water enters the washing tank 20 through the opening 24. The valve controller is electrically connected to the air valve. The purpose is to control the air valve, and depending on the high temperature cleaning steps, or the paper size applies the Chinese National Standard (CNS) Α4 specification (2 丨 〇297mm). Printed by the employee consumer cooperative-4442 9 0 A7 B7 V. Description of the invention (5) The room temperature cleaning step allows the air valve to pass through the warming cleaning water supplied by the pipeline 36 or the room temperature cleaning provided by the pipeline 34 Water passes. The pipeline 30 is a pipeline through which room temperature deionized cleaning water enters. The flow chart in Figure 3 includes the steps of "wafer laser marking", "ultrasonic sonic vibration cleaning", "washing with 50 C water for 3 minutes", and "washing with 25 ° C water for 5 minutes three times". Among them, "wafer laser marking" is a step of marking batch marks and other marks on the edge of the wafer by a laser beam before the thermal oxide layer is formed on the wafer. Since laser marking will leave a large amount of impurity particles, I have a very high-frequency ultra-high-frequency oscillating method in the liquid, washing at a temperature of about 45 ° C. Then, the wafer 10 is moved to the slot 26 inside the wafer cleaning device, and the deionized water heated to 50 ° C by the heating device is entered into the cleaning tank 20 through the air valve and the opening 24. Rinse for about 3 minutes. Next, the above 50 ° C washing water is discharged from the outside of the washing tank 20 through a discharge port (not shown), and then the deionized water at room temperature (about 25 ° C) enters the washing tank 20 through the air valve and the opening 24 through the pipeline 34 'To clean the wafer for about 5 minutes while removing the remaining material' and repeat the cleaning three times. At this point, the wafer is cleaned. The wafer is then moved to a subsequent thermal curing process to form a thermally cured layer. Features and Effects of the Invention According to the method and device for wafer cleaning provided by the present invention, the heating device raises the cleaning water to 50eC to clean the wafer 10, and then repeatedly cleans the wafer 10 with room temperature cleaning water in the same device. Residual chemical substances such as NH4OH and H2O2 formed by the aforementioned ultra-high-frequency oscillating method can be surely washed away. It can be checked according to the Chinese Standards (CNS) of this paper standard (2 cuts 297) {Please read the precautions on the back before filling this page} 袈 ·
'1T 4442 9 0 Α7 ___________B7 五、發明説明（6 ) 使後續晶圓所產生的熱氧化層品質較佳，而不致有變色的 現象。本發明所提供的晶圓清洗裝置不需過於複雜的構造 與步驟，即可使後續步驟得到品質良好的熱氧化層。不致 如習知技術般增加清洗機台的負擔。 再者’本發明所提供的方法及裝置不需如習知技術 般，在去離子水重複清洗後，仍需使用HPM溶液加以清 洗’可節省化學藥品的用量。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此項技藝者，在不脫離本發明之精 神和範圍内，當可作更動與潤飾，因此本發明之保護範圍 當視後附之申請專利範圍所界定者為準。 ：--.1- k — (婧先閱讀背面之注$項再填寫本頁) 訂 經濟部中央標準局貝工消資合作社印裝 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29?公楚）'1T 4442 9 0 Α7 ___________B7 V. Description of the invention (6) The quality of the thermal oxide layer produced by subsequent wafers is better without discoloration. The wafer cleaning device provided by the present invention does not require excessively complicated structures and steps, and can obtain a thermal oxide layer of good quality in subsequent steps. It does not increase the burden on the cleaning machine like the conventional technology. Furthermore, 'the method and device provided by the present invention do not need to be conventional techniques, and after repeated cleaning with deionized water, they still need to be cleaned with HPM solution', which can save the amount of chemicals. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make changes and retouching without departing from the spirit and scope of the present invention. The scope of protection shall be determined by the scope of the attached patent application. ：-. 1-k — (Jing first read the note on the back and fill in this page) Order the paper size of the Central Standards Bureau of the Ministry of Economic Affairs, Beigong Consumer Cooperatives, and the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X29? Gongchu)