TW442364B - Composition and method for polishing rigid disks - Google Patents

Composition and method for polishing rigid disks Download PDF

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Publication number
TW442364B
TW442364B TW86117776A TW86117776A TW442364B TW 442364 B TW442364 B TW 442364B TW 86117776 A TW86117776 A TW 86117776A TW 86117776 A TW86117776 A TW 86117776A TW 442364 B TW442364 B TW 442364B
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item
patent application
scope
mechanical polishing
chemical mechanical
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TW86117776A
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Chinese (zh)
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Christopher C Streinz
Matthew Neville
Steven K Grumbine
Brian L Mueller
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Cabot Microelectronics Corp
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Priority claimed from US08/753,482 external-priority patent/US5958288A/en
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Publication of TW442364B publication Critical patent/TW442364B/en

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00Brightening metals by chemical means

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A method for polishing computer rigid disks comprising bringing at least one surface of the rigid disk into contact with a polishing pad and applying a dispersion to the rigid disk to give a polished rigid disk having an rms roughness less than about 1.4 nm. Also disclosed is a dispersion and polishing slurry for polishing rigid disks.

Description

15.根據申請專利範圍第14項之化學機械磨光漿液,其中氧 化劑為硝酸鐵,鐵氰化鉀,碘酸鉀,與其混合物。 16. 根據申請專利範圍第13項之化學機械磨光漿液,其中氧 化劑為有機過化合物,無機過化合物,非過化合物包括溴 酸鹽,氯酸鹽,鉻酸鹽,碘酸鹽,碘酸,鈽(IV)化合物, 與其混合物。 17. 根據申請專利範圍第16項之化學機械磨光漿液,其中氧 化劑為單過硫酸鹽,過硫酸鹽,過氧化物,過碘酸鹽,與 其混合物。 18. 根據申請專利範圍第17項之化學機械磨光漿液,其中氧 化劑包含至少一種具有下式之單過硫酸鹽: Ο X1-O-O-S-O-X2 0 其中X丨,X2各為Η,Si(R’)3,NH4與N(R”)4之碱土金屬 如Li,Na,K ;其中R’為具有1到10個或更多碳原子的 烷基,且其中R”為Η,烷基,芳基,或其混合物。 19. 根據申請專利範圍第18項之化學機械磨光槳液,其含有 約0.1到約5.0重量%的單過硫酸鹽。 20. 根據申請專利範圍第19項之化學機械磨光漿液,其含有 約 0.2 到約 10.0 重量%的 2KHS05 · KHS04 . K2S04。 21. 根據申請專利範圍第18項之化學機械磨光漿液,其含有 442364 煙霧狀氧化矽。 22. 根據申請專利範圍第13項之化學機械磨光漿液,其中氧 化劑為過氧化氫。 23. 根據申請專利範圍第22項之化學機械磨光漿液,其含有 約0.1到約50重量%的過氧化氫。 24. 根據申請專利範圍第23項之化學機械磨光漿液,其含有 約0.1到約10重量%的過氧化氳。 25. 根據申請專利範圍第24項之化學機械磨光漿液,其含有 φ 煙霧狀氧化鋁。 26. 根據申請專利範圍第13項之化學機械磨光漿液,其含有 至少一種金屬催.化劑。 27. 根據申請專利範圍第26項之化學機械磨光漿液,其中氧 化劑具有的電化電位大於使催化劑氧化所需之電化電位。 28. 根據申請專利範圍第27項之化學機械磨光漿液,其中金 屬催化劑為 Ag,Co,Cr,Cu,Fe,Mo,Mn,Nb,Ni, Os,Pd,Ru,Sn,Ti,V與其混合物之化合物,並具有多 種氧化狀態。 29. 根據申請專利範圍第28項之化學機械磨光槳液,其中金 屬催化劑為鐵,銅,銀,與任何其組合之化合物,並具有 多種氧化狀態。 30. 根據申請專利範圍第29項之化學機械磨光漿液,其中金 屬催化劑係由包含無機鐵化合物與有機鐵化合物並具多 種氧化狀態群組中選出的一種鐵催化劑。 4 442364、 31. 根據申請專利範圍第30項之化學機械磨光漿液,其中鐵 催化劑為硝酸鐵。 32. 根據申請專利範圍第13項之化學機械磨光漿液,該分散 液含有至少一種氧化劑,與約0.001到2.0重量%的催化劑。 33. 根據申請專利範圍第13項之化學機械磨光漿液,其中分 散液包含一種單過硫酸鹽,與約0.0005到約0.5重量%的 一種鐵催化劑。 34. 根據申請專利範圍第33項之化學機械磨光漿液,其中包 含約0.2到約10.0重量%的三重鹽,與約0.05到約1.0重 籲 量%的瑞酸鐵。 35. —種用於磨光硬磁碟之化學機械磨光漿液,其含有一種煙 霧狀氧化鋁研磨料,其表面積範圍由約5 m2/g到約430 m2/g,顆粒大小分佈低於約1.0微米,平均顆粒直徑小於 約0.4微米,一種鐵催化劑,與約0.1到10.0重量%,而 由包含過氧化氫與單過硫酸鹽群組選出的氧化劑,其中當 氧化劑為過氧化氫時,漿液含有約0.01到約0.05重量%的 φ 硝酸鐵,而當氧化劑為單過硫酸鹽時,則漿液含有約0.1 到約0.5重量%的硝酸鐵催化劑,且其中該化學機械磨光. 漿液具有約2.0到約5.0的pH值。 36. —種磨光硬磁碟之方法,其包括下列步驟: (a) 製備如申請專利範圍第1項所示之分散液; (b) 將分散液塗敷於硬磁碟之至少一個表面;且 (c) 以墊片接觸硬磁碟表面並相對於硬磁碟移動該墊 5 片,以自硬磁碟移除至少部份金屬層,得到具有rms粗糙 度低於1.4毫微米之磨光硬磁碟。 37. 根據申請專利範圍第36項之方法,其中該分散液係如申 請專利範圍第2項中所示。 38. 根據申請專利範圍第36項之方法,其中分散液包含約0.5 重量%到約55重量%的至少一種金屬氧化物研磨料,選自 包括氧化銘,氧化鈦,氧化錯,氧化錄,氧化梦,氧化筛, 包括其混合物,及其化學混合物。 39. 根據申請專利範圍第38項之方法,其中該金屬氧化物研 磨料係如申請專利範圍第5項中所示。 40. 根據申請專利範圍第39項之方法,其中該於分散液中使 用之金屬氧化物研磨料,係由如申請專利範圍第6項中所 示進行處理。 41. 根據申請專利範圍第40項之方法,其中該金屬氧化物研 磨料係如申請專利範圍第7項中所示。 42. 根據申請專利範圍第41項之分方法,其中該金屬氧化物 係如申請專利範圍第8項中所示。 43. 根據申請專利範圍第41項之方法,其中該金屬氧化物研 磨料係如申請專利範圍第9項中所示。 44. 根據申請專利範圍第41項之方法,其中該煙霧狀氧化鋁 及煙霧狀氧化矽係如申請專利範圍第10項中所示。 45. 根據申請專利範圍第41項之方法,其中該煙霧狀氧化鋁 係如申請專利範圍第11項中所示。 *t〇. 很據申請專利範圍第41項之方法,其中該 係如申請專利範圍第12項中所示。、 狀乳切 47. 根據申請專利範圍第36項 少一種氧化劑。 方去’其中該分散液包含至 48. ί==利範圍第47項之方法,其中該氧化劑係如申 β月專利fe圍第14項t所示。 甲 49. 根據申請專利範圍第 方去,其中該氧化_^ 0月專利fe圍第15項中所示。 甲 5〇.根據申請專利範圍第47 社直⑽ 决’其中該氧化劑係如申 5月專利fe圍第16項中所示。 甲 根據申請專利範圍第5〇項之方 ^ 、 ,其中該氧化劑係如申 '•月專利乾圍第17項中所示。 52.根據申請專利範圍第51項之 枝、 去,其中該氧化劑係如申 印專利範圍第18項_所示。 53·根據申請專利範圍第52 浆液係如巾料㈣„第19;^’=+概料械磨光 54. =!利範圍第52項之方法'其中該化學機械磨光 漿液係如申請專利範圍第20項中所示。 55. =!!利範圍第47項之方法,其。中該化學機械磨光 漿液係如申請專利範圍第21項中所示。 56. ==_47 一其中該氧化射係如中 明專利範圍第22項中所示。 57. 根據申請專利範圍第56項之方法,其中該化學機械磨光 442364 漿液係如申請專利範圍第23項中所示。 58. 根據申請專利範圍第57項之方法,其中該化學機械磨光 漿液係如申請專利範圍第24項中所示。 59. 根據申請專利範圍第58項之方法,其中該化學機械磨光 漿液係如申請專利範圍第25項中所示。 60. 根據申請專利範圍第47項之方法,其中該化學機械磨光 漿液係如申請專利範圍第26項中所示。 61. 根據申請專利範圍第60項之方法,其中該氧化劑係如申 # 請專利範圍第27項中所示。 62. 根據申請專利範圍第61項之方法,其中該氧化劑係如申 請專利範圍第28項中所示。 63. 根據申請專利範圍第62項之方法,其中該氧化劑係如申 請專利範圍第29項中所示。 64. 根據申請專利範圍第63項之方法,其中該氧化劑係如申 請專利範圍第30項中所示。 I 65.根據申請專利範圍第63項之方法,其中該氧化劑係如申 請專利範圍第31項中所示。 66. 根據申請專利範®第36項之方法,其中該分散液其含有 至少一種氧化劑,與約0.001到2.0重量%催化劑。 67. 根據申請專利範圍第47項之方法,其中分散液包含一種 單過硫酸鹽氧化劑,與約0.005到約1.0重量%的一種鐵催 化劑。 68. 根據申請專利範圍第36項之方法,其中硬磁碟具有第一 8 側與第二側,且其中係將包含水性分散液之第一墊片施用 於第一側,並將包含水性分散液之第二墊片施用於第二 側,使第一與第二墊片相對於硬磁碟關係移動。 一種磨光具有第一側與第二側之硬磁碟之方法,其包括以 下步驟: (a) 提供一種化學機械磨光漿液,其包含煙霧狀氧化鋁 研磨料具有由約5m2/g到約430 m2/g範圍表面積,顆粒尺 寸分佈低於約1.0微米,而平均顆粒直徑小於約0.4微米, 鐵催化劑,與約1.0到1〇.〇重量%的一種氧化劑,其由包 含過氧化氫與單過硫酸鹽群組中選出,其中當氧化劑為氧 化氫時,將漿液包含約0.01到約0.05重量%的硝酸鐵,而 當氧化劑為單過硫酸鹽時,漿液包含約0.1到約0.5重量% 的硝酸鐵催化劑,其中該化學機械磨光漿液具有pH值由 約2.0到約5.0 ; (b) 在硬磁碟之第一表面與第二表面上塗敷該化學機械 磨光漿液;與 (c) 使第一墊片接觸第一表面並使第二墊片接觸第二表 面,以相對於硬磁碟關係移動第一墊片與第二墊片,以去-除硬磁碟表面物料,其速率大於約1.5μ inch/min,以此由 硬磁碟除去至少部份金屬層,得到具有rms粗糙度小於1.4 毫微米之磨光硬磁碟表面。15. A chemical-mechanical polishing slurry according to item 14 of the application, wherein the oxidizing agent is iron nitrate, potassium ferricyanide, potassium iodate, and a mixture thereof. 16. The chemical-mechanical polishing slurry according to item 13 of the application, wherein the oxidant is an organic compound, an inorganic compound, and a non-peroxide compound includes bromate, chlorate, chromate, iodate, iodic acid, (IV) compounds, and mixtures thereof. 17. The chemical mechanical polishing slurry according to item 16 of the application, wherein the oxidizing agent is monopersulfate, persulfate, peroxide, periodate, and mixtures thereof. 18. The chemical mechanical polishing slurry according to item 17 of the scope of patent application, wherein the oxidant contains at least one monopersulfate salt having the formula: 0 X1-OOSO-X2 0 where X 丨 and X2 are each Η, and Si (R ' ) 3, NH4 and N (R ") 4 alkaline earth metals such as Li, Na, K; where R 'is an alkyl group having 1 to 10 or more carbon atoms, and where R" is fluorene, alkyl, aromatic Base, or a mixture thereof. 19. The chemical mechanical polishing paddle fluid according to item 18 of the scope of patent application, which contains about 0.1 to about 5.0% by weight of a monopersulfate. 20. The chemical mechanical polishing slurry according to item 19 of the scope of patent application, which contains about 0.2 to about 10.0% by weight of 2KHS05 · KHS04. K2S04. 21. The chemical mechanical polishing slurry according to item 18 of the patent application scope, which contains 442364 fumed silica. 22. The chemical mechanical polishing slurry according to item 13 of the application, wherein the oxidizing agent is hydrogen peroxide. 23. A chemical mechanical polishing slurry according to item 22 of the patent application, which contains from about 0.1 to about 50% by weight of hydrogen peroxide. 24. The chemical mechanical polishing slurry according to item 23 of the scope of patent application, which contains about 0.1 to about 10% by weight of scandium peroxide. 25. The chemical mechanical polishing slurry according to item 24 of the patent application scope, which contains φ aerosol-like alumina. 26. The chemical-mechanical polishing slurry according to item 13 of the application, which contains at least one metal catalyst. 27. The chemical mechanical polishing slurry according to item 26 of the application, wherein the oxidizing agent has an electrochemical potential greater than that required to oxidize the catalyst. 28. The chemical-mechanical polishing slurry according to item 27 of the application, wherein the metal catalyst is Ag, Co, Cr, Cu, Fe, Mo, Mn, Nb, Ni, Os, Pd, Ru, Sn, Ti, V and the like. A mixture of compounds that have multiple oxidation states. 29. The chemical mechanical polishing paddle fluid according to item 28 of the patent application, wherein the metal catalyst is iron, copper, silver, and any combination thereof, and has various oxidation states. 30. The chemical mechanical polishing slurry according to item 29 of the application, wherein the metal catalyst is an iron catalyst selected from the group consisting of inorganic iron compounds and organic iron compounds and having multiple oxidation states. 4 442364, 31. The chemical mechanical polishing slurry according to item 30 of the application, wherein the iron catalyst is iron nitrate. 32. The chemical mechanical polishing slurry according to item 13 of the application, the dispersion contains at least one oxidizing agent and about 0.001 to 2.0% by weight of a catalyst. 33. The chemical mechanical polishing slurry according to item 13 of the application, wherein the dispersion comprises a monopersulfate and about 0.0005 to about 0.5% by weight of an iron catalyst. 34. The chemical mechanical polishing slurry according to item 33 of the patent application, which comprises about 0.2 to about 10.0% by weight of a triple salt, and about 0.05 to about 1.0% by weight of ferric acid. 35. A chemical mechanical polishing slurry for polishing hard disks, which contains a fumes alumina abrasive with a surface area ranging from about 5 m2 / g to about 430 m2 / g and a particle size distribution below about 1.0 micron, average particle diameter is less than about 0.4 micron, an iron catalyst with about 0.1 to 10.0% by weight, and an oxidant selected from the group consisting of hydrogen peroxide and monopersulfate, wherein when the oxidant is hydrogen peroxide, the slurry Contains about 0.01 to about 0.05% by weight of φ ferric nitrate, and when the oxidant is a monopersulfate, the slurry contains about 0.1 to about 0.5% by weight of the ferric nitrate catalyst, and wherein the chemical mechanical polishing. The slurry has about 2.0 To a pH of about 5.0. 36. —A method for polishing a hard disk, comprising the following steps: (a) preparing a dispersion liquid as shown in item 1 of the scope of patent application; (b) applying the dispersion liquid to at least one surface of the hard disk ; And (c) contact the surface of the hard disk with a pad and move the pad 5 pieces relative to the hard disk to remove at least part of the metal layer from the hard disk, and obtain a mill with an rms roughness of less than 1.4 nm Optical hard disk. 37. The method according to item 36 of the patent application, wherein the dispersion is as shown in item 2 of the patent application. 38. The method according to item 36 of the patent application, wherein the dispersion comprises at least one metal oxide abrasive material of about 0.5% to about 55% by weight, selected from the group consisting of oxide oxide, titanium oxide, oxidation oxide, oxidation log, oxidation Dreams, oxidation sieves, including their mixtures, and their chemical mixtures. 39. The method according to item 38 of the patent application, wherein the metal oxide abrasive is as shown in item 5 of the patent application. 40. The method according to item 39 of the scope of patent application, wherein the metal oxide abrasive used in the dispersion is treated as shown in item 6 of the scope of patent application. 41. The method according to item 40 of the patent application, wherein the metal oxide abrasive is as shown in item 7 of the patent application. 42. The method according to item 41 of the scope of patent application, wherein the metal oxide is as shown in item 8 of the scope of patent application. 43. The method according to item 41 of the scope of patent application, wherein the metal oxide abrasive is as shown in item 9 of the scope of patent application. 44. The method according to item 41 of the application, wherein the fumed alumina and fumed silica are as shown in item 10 of the application. 45. The method according to item 41 of the patent application, wherein the fumed alumina is as shown in item 11 of the patent application. * t〇. The method according to item 41 of the scope of patent application is as shown in item 12 of the scope of patent application. 47. One less oxidant according to item 36 of the scope of patent application. Fang Qu 'wherein the dispersion solution contains the method to item 47 of the profit range, wherein the oxidant is as shown in item 14 t of the patent application. A 49. According to the scope of the patent application, the oxidation is shown in item 15 of the patent. A 50. According to the scope of the patent application No. 47, the agency decided that the oxidant is as shown in item 16 of the May patent application. A According to the application of the scope of the patent No. 50, ^, where the oxidant is as shown in the application of the "Month of the patent" in the 17th. 52. According to the branch of claim 51, the oxidant is shown in item 18 of the scope of patent application. 53. According to the scope of the patent application, the 52th slurry system is such as towels. 第 19; It is shown in the scope item 20. 55. = !! The method of the scope 47 item, in which the chemical mechanical polishing slurry is as shown in the scope of the patent application scope. 56. == _ 47 The oxidation shot system is shown in item 22 of the Zhongming patent scope. 57. The method according to item 56 of the patent application scope, wherein the chemical mechanical polishing 442364 slurry is shown in item 23 of the patent application scope. 58. According to The method of applying for the scope of patent No. 57, wherein the chemical mechanical polishing slurry is as shown in the scope of applying for the patent scope of item 24. 59. The method of the scope of applying for the patent, No. 58 wherein the chemical mechanical polishing slurry is as applied It is shown in item 25 of the patent scope. 60. The method according to item 47 of the patent application scope, wherein the chemical mechanical polishing slurry is as shown in item 26 of the patent application scope. 61. According to item 60 of the patent application scope Method, wherein the oxidant is as claimed It is shown in item 27. 62. The method according to item 61 of the scope of patent application, wherein the oxidant is as shown in item 28 in the scope of patent application. 63. The method according to item 62 of the scope of patent application, wherein the oxidant It is as shown in item 29 of the scope of patent application. 64. The method according to item 63 of the scope of patent application, wherein the oxidant is as shown in item 30 of the scope of patent application. I 65. According to item 63 of the scope of patent application Method, wherein the oxidant is as shown in item 31 of the scope of patent application. 66. The method according to item 36 of the patent application, wherein the dispersion contains at least one oxidant and about 0.001 to 2.0% by weight of catalyst. 67 The method according to item 47 of the patent application, wherein the dispersion comprises a monopersulfate oxidant, and about 0.005 to about 1.0% by weight of an iron catalyst. 68. The method according to item 36 of the patent application, wherein the magnetic field is hard The dish has a first 8 side and a second side, and a first gasket including an aqueous dispersion is applied to the first side, and a second gasket including the aqueous dispersion is applied to the second side. The first and second pads are moved relative to the hard disk relationship. A method of polishing a hard disk having a first side and a second side includes the following steps: (a) providing a chemical mechanical polishing slurry, It contains aerosol-like alumina abrasive having a surface area ranging from about 5 m2 / g to about 430 m2 / g, a particle size distribution below about 1.0 micron, and an average particle diameter of less than about 0.4 micron, an iron catalyst, and about 1.0 to 1.0 .0% by weight of an oxidant selected from the group consisting of hydrogen peroxide and monopersulfate, wherein when the oxidant is hydrogen oxide, the slurry contains about 0.01 to about 0.05% by weight iron nitrate, and when the oxidant is For single persulfate, the slurry contains about 0.1 to about 0.5% by weight of iron nitrate catalyst, wherein the chemical mechanical polishing slurry has a pH value from about 2.0 to about 5.0; (b) on the first surface of the hard disk and the first The two surfaces are coated with the chemical mechanical polishing slurry; and (c) the first pad is in contact with the first surface and the second pad is in contact with the second surface, and the first pad and the second pad are moved relative to the hard disk relationship. Shims to remove-except hard disk meter Material at a rate greater than about 1.5μ inch / min, thereby removing at least a portion of the metal layer is a hard disk, a hard disk obtain a polished surface of the rms roughness of less than 1.4 nm.

TW86117776A 1996-11-26 1997-11-26 Composition and method for polishing rigid disks TW442364B (en)

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US08/753,482 US5958288A (en) 1996-11-26 1996-11-26 Composition and slurry useful for metal CMP
US08/844,195 US6015506A (en) 1996-11-26 1997-04-18 Composition and method for polishing rigid disks

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CN1125862C (en) * 1999-09-20 2003-10-29 长兴化学工业股份有限公司 Composite ground in chemical machine for semiconductor processing
JP4238951B2 (en) * 1999-09-28 2009-03-18 株式会社フジミインコーポレーテッド Polishing composition and method for producing memory hard disk using the same
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US6299795B1 (en) 2000-01-18 2001-10-09 Praxair S.T. Technology, Inc. Polishing slurry
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WO2004111145A1 (en) * 2003-06-13 2004-12-23 Showa Denko K.K. Polishing composition and polishing method
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CN113001418B (en) * 2021-01-28 2024-01-26 广东朗旗新材料科技有限公司 Ceramic bond of superhard abrasive tool, superhard abrasive tool and preparation method of superhard abrasive tool

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