經濟部智慧財產局員工消費合作社印製 439070 A7 B7 _____ 五、發明説明（，） (1) 發明所靥之技術領域 本發明偽辟於以l〇〇G°C以下的低溫燒結的積牖陶瓷電 容器。尤其是鼷於儘管介電體層的每一層厚度低於 ，但具有高信賴性，及比高介電你數的高介電傜數積層 陶瓷電容器。 (2) 習用技術 在積層陶粢電容器廣泛使用以BaTi03，或PbTi〇3為 主體，具有鈣钛鑛構造的介電體材料。近年，雖然急速 進展積層陶瓷電容器的小型高容量化，但對於其裝置而 言，減薄介電體層，或提高介電體的比介電傺數較有效 。尤其是由於減薄介電體層對於積1陶瓷電容器的小型 化有貢獻因此特別有效。如欲滅薄介霄體層，即燒製後 的介電體陶瓷結晶顆粒精掛而且粒徑待別小。 一般而言，由於對於BaTi03基質介電體的燒结需要所 諝1300Ό〜14O0°C的高粗，相對地缓和型強介電體因以 1000°C以下燒結而可将富銀的的銀耙合金用於内部罨棰 ，因此成本上的價值非常高β而且，BaTiO 3盡質的介 電體層傜以淇足JIS規格的X 7R待性（-55°C〜125°C以 20*0為基準的容量變化率在士 15%以内）比介甯傑數約 2 0 0 0 - 3 0 0 0 ,谋足Y5V待性（-30°C〜85*C容量度化率在 + 22%〜-82% )而12000〜15000程度。相對地許多報吿 說缓和型強介電體谋足Y5V待性者比介電俗數在20Q00以 上p所以為積層陶瓷罨容器的高容量化從比介電偽數方 面者來可以説理想的是緩和型強介電體β 本紙張尺度適用中國國家標準（CNS ) A4規格（2!OX297公釐） ------^----β------ir------^ (請先閱讀背面之注意事項再填寫本頁) 43 90 7 ο Α7 __ _Β?__ 五、發明説明（> ) (請先閲讀背面之注意事項再填寫本頁) 但使用BaTi03基質的介電體材料畤，雖使開發介電 體層的厚度低於5#*者，但將包含Pb的複合鈣钛鑛化合 物（以下，簡稱缓和型強介電體）作為介電醱材料使用時， 介電體層的厚度在數十；UB的積層陶瓷電容器也有結晶 的平均粒徑3#·以上者。但報告說僅到介電體層的厚度 薄約 7/ub(例如 Preceeding of IEMT/IHC ’97 Syaposiu鼸 ΡΡ 378)β此外，此時结晶顆粒的粒徑仍然是約2/iB。 認定鍰和型強介電體不適合薄介電髅層的積歴陶瓷電容 器的原因，一般而言，縷和型強介電醴燒製陶瓷粉末精緻 化同時伴同顯著的粒成長提高比介電偽数，但一方面降 低機械的強度，結果造成不能播得信賴性所引起β作為 因應粒成長的弊病，例如為提高機械的高度，如待開平 8-19867 5號公報掲示調整以便将燒结後的陶瓷平均粒徑 以2〜5/iB形成最大粒徑和最小徑的比4〜6»而且，在 特開平5-190376號公報掲示為避免绝綠耐壓的劣化將缠 和型強介電饅的燒結體的平均粒徑設定為3#*以下。如欲 促進粒成長即将缓和型強介電體的A-B倒fcb率設定為1.0以 上較有效。但此時確保信賴性困_。 經濟部智慧財產局員工消費合作杜印製 一方面•如欲抑制粒成長雖將緩和型強介電饅的A/B« bb率設定未谋1較有效果，但此時比介電偽數多半成為 特性β對於其極端的值案而言，可列出將缓和型強介電體 應用於薄膜電容器的技術β如待開平7-183165號公報所 記載雖掲示適用於DRAM技術，但此畤，粒徑係從數十η· 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） 439070 A7 B7 經濟部智慧財產局員工消費合作社印® 五、發明説明（令 ) 1 1 到 數 百 η ί 1程 度 比介電俗數ft不過是20 0程度， 不能獲得 1 1 1 本 來 高 的 介 電 係 數 〇 因 此 將 緩 和 型 強 介 電 醴 用 於 介 電 體 1 畤 ， 不 能 實 現 使 結 晶 頼 粒 成 長 以 便 使 tfc 介 電 係 數 充 份 提 請 先 1 1 髙 而 且 介 電 醱 層 待 別 薄 的 積 層 陶 瓷 電 容 器 〇 閱 1 背 1 將 獲 得 高 比 介 電 你 數 而 且 可 逹 成 1 0 G 0 °C以下低溫燒結 面 之 1 的 緩 和 型 強 介 電 體 促 使 充 份 成 長 其 結 晶 顆 粒 適 用 於 積 注 意 1 事 1 層 陶 瓷 電 容 器 » 為 積 層 陶 瓷 電 容 器 的 小 型 容 量 化 及 低 成 項 再 1 填 1 本 化 有 效 * 但 如 果 使 緩 和 型 強 介 電 體 在 m 製 中 粒 成 長 即 寫 本 X 具 有 所 謂 是 否 不 適 合 從 信 賴 性 方 面 到 介 電 匾 薄 層 化 的 間 頁 S-· 1 I 題 0 1 | [ 發 明 之 百 的 1 1 於 是 本 發 明 的 百 的 在 於 提 供 使 用 缓 和 型 強 介 電 體 實 1 訂 施 介 電 體 層 的 薄 膜 化 謀 求 積 層 陶 瓷 電 容 器 的 小 型 高 容 量 1 I 化 * 而 且 儘 管 燒 製 中 使 介 電 體 陶 瓷 結 晶 顆 粒 成 長 仍 避 免 1 I 降 低 信 賴 性 的 積 層 陶 瓷 電 容 器 〇 1 | 為 滿 足 上 述 巨 的 本發明在以ΑΒ0， >表示的禊合鈣鈦 1 線 攝化合物的B 倒 含 有 V 離 子 * 而 旦 A 锂 離 子 和 B 鲴 離 子 ί 的 比 率 A/ Β 0 .9 7 5以上未谋 1 . 0的複合鈣鈦鑛化合物作 I 為 介 電 體 層 的 構 成 材 料 * 該 介 電 體 層 和 内 部 電 搔 具 有 互 1 1 相 積 層 的 構 造 » 而 且 在 該 介 電 體 層 的 厚 度 1 # 以 上 未 1 谋 9 / ί祖 的 積 層 陶 瓷 電 容 器 > 其 待 徴 為 構 成 介 電 amt 磨 層 的 結 1 1 晶 顆 粒 平 均 粒 徑 是 否 和 介 電 體 層 的 厚 度 相 同 S 或 超 過 1 1 3 ju η 者 〇 1 1 並行將在上述複合鈣鈦鑛化合物的A 含 有 Pb離子95% I 以 上 者 t 及 / 或 在 B 側含有Mg離子 5 - * Zn離子至少 種 者 1 I 1 1 本紙乐尺度適用中國國家標準（CNS ) A4規格（210X297公釐} 439070 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明 ( f ) 1 1 用 於 積 層 陶 瓷 電 容 器 為 其 待 m 〇 而 且 > 對 於 這 些 複 合 鈣 1 1 I 钛鑛 化 合 物 ΑΒ0 作為N n離子添加1 n c > 1 %以下的Ρ nC 或 1 其 他 m 化 合 物 者 作 為 介 電 體 層 的 構 成 材 料 為 其 特 徴 〇 而 ，、 請 1 1 且 f 在 這 些 積 層 陶 瓷 電 容 器 * 其 特 m 為 内 部 電 極 m 於 錶 ή 讀 1 f 1 m 合 金 9 並 且 其 待 m 為 在 銀 合 金 的 銀 bb 率 5 0 % 以 上 面 之 i 9C % 以 下 者 0 注 意 • ι* I 事 1 [ 圖 式 之 簡 DCI 卑 說 明 3 項 再 1 填 1 第 1 圖 係 從 積 層 陶 瓷 電 容 器 的 剖 面 照 Η 求 出 結 晶 顆 粒 寫 装 平 均 粒 徑 的 方 法 模 式 圖 〇 頁 1 1 第 2 圖 僳 表 示 從 實 施 例 1 的 積 層 陶 瓷 電 容 器 的 靜 電 容 1 I 量 以 計 算 求 出 bh 介 電 係 數 對 於 燒 製 溫 度 依 賴 性 的 曲 線 圖。 1 第 3 圖 你 表 示 在 實 施 例 1 的 積 層 陶 瓷 霄 容 器 的 絶 線 電 1 訂 1 I 阻 對 於 燒 製 溫 度 依 賴 性 的 曲 線 圖 〇 第 4 far 圖 傜 表 示 在 實 施 例 1 的 積 層 陶 瓷 電 容 器 破 imr m 電 壓 1 i (BDV)對於燒製溫度依賴性的曲線_<» 1 I 第 5 匾 偽 表 示 從 在 第 2 實 施 例 的 積 層 陶 瓷 電 容 器 的 辞 1 線 電 容 量 以 計 算 求 出 的 比 介 電 數 對 於 燒 製 溫 度 依 賴 性 的 曲 線 圖 〇 f 第 6 圔 係 表 示 在 實 施 例 2 的 積 層 陶 瓷 電 容 器 的 绝 緣 電 1 1 I 阻 對 於 燒 製 溫 度 依 賴 性 的 曲 線 t5t 圏 〇 I 第 7 像 表 示 在 實 施 例 2 的 積 層 陶 瓷 電 容 器 的 破 壤 電 壓 1 I (BDV)對於燒製溫度依賴性的曲線圖。 1 1 第 8 圖 偽 表 示 從 在 比 較 例 1 的 積 層 陶 瓷 電 容 器 的 靜 電 1 1 電 容 量 以 計 算 求 出 的 比 介 電 6 % 數 對 於 燒 製 溫 度 依 賴 性 的 1 1 1 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） A7 B7 439070 五、發明説明（Γ ) 曲線國。Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 439070 A7 B7 _____ V. Description of the Invention (,) (1) Technical Field of the Invention The present invention is based on the accumulated ceramics sintered at a low temperature below 100G ° C. Capacitor. In particular, although the thickness of each layer of the dielectric layer is lower than that, it has a high reliability and a high dielectric multilayer ceramic capacitor with a higher dielectric number than a high dielectric layer. (2) Conventional technology In multilayer ceramic capacitors, dielectric materials with BaTi03 or PbTi03 as the main body and having a perovskite structure are widely used. In recent years, although multilayer ceramic capacitors have been rapidly reduced in size and capacity, it is more effective for the devices to reduce the thickness of the dielectric layer or increase the dielectric constant of the dielectric. In particular, thinning the dielectric layer is particularly effective because it contributes to miniaturization of the ceramic capacitor. If the thin dielectric layer is to be eliminated, the ceramic crystal grains of the dielectric ceramic after firing should be fine and the particle diameter should be small. Generally speaking, the sintering of BaTi03 matrix dielectrics requires a high thickness of 1300 谞 ~ 14O0 ° C. Relatively mild ferroelectrics can be sintered at 1000 ° C or lower, so that silver-rich silver can be raked. The alloy is used for internal plutonium, so the cost value is very high β In addition, the dielectric layer made of BaTiO 3 is made of JIS standard X 7R. (-55 ° C ~ 125 ° C with 20 * 0 as Baseline capacity change rate is within 15%) than the number of Jie Ningjie is about 2 0 0-3 0 0 0, to meet Y5V standby (-30 ° C ~ 85 * C capacity conversion rate is + 22% ~ -82%) and about 12000 ~ 15000. On the other hand, many reports say that the moderate type ferroelectric material meets the Y5V requirement. The dielectric number is 20Q00 or more p. Therefore, the high capacity of the multilayer ceramic concrete container is ideal compared to the dielectric pseudo number. It is a moderate ferroelectric β. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (2! OX297 mm) ------ ^ ---- β ------ ir ---- -^ (Please read the precautions on the back before filling this page) 43 90 7 ο Α7 __ _Β? __ 5. Description of the invention (>) (Please read the precautions on the back before filling this page) But use BaTi03 matrix When the thickness of the dielectric material 畤 is less than 5 # *, when a composite perovskite compound containing Pb (hereinafter referred to as a mild ferroelectric) is used as the dielectric 酦 material The thickness of the dielectric layer is in the tens; the multilayer ceramic capacitors of UB also have an average crystal grain size of 3 # · or more. However, it is reported that the thickness of the dielectric layer is only about 7 / ub (for example, Preceeding of IEMT / IHC ′97 Syaposiu 鼸 PP 378) β. In addition, the crystal particle size is still about 2 / iB. The reason why the hafnium-type ferroelectrics are not suitable for thin ceramic capacitors with thin dielectric cross-sections is generally found. In general, the hawk-type ferroelectric sintered ceramic powders are refined and accompanied by significant grain growth. However, on the one hand, the strength of the machine is reduced. As a result, β, which is caused by the failure to broadcast the reliability, is caused by the growth of the granules. For example, in order to increase the height of the machine, for example, to be published in Kaikai 8-19867 5 The average particle diameter of ceramics is 2 to 5 / iB to form a ratio of the maximum particle diameter to the minimum diameter of 4 to 6 ». Furthermore, in Japanese Patent Application Laid-Open No. 5-190376, it is shown that a entangled ferroelectric is used to prevent deterioration of the extreme green voltage. The average particle diameter of the sintered compact of rhenium is set to 3 # * or less. To promote grain growth, it is effective to set the A-B inverted fcb ratio of the moderated ferroelectric to 1.0 or higher. But at this time, it is difficult to ensure reliability. On the one hand, the consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs on the one hand. • If you want to suppress the growth of the grain, although the A / B «bb rate setting of the moderating strong dielectric 馒 is more effective, but this time than the dielectric pseudo number Most of the characteristics are β. For its extreme value, a technology for applying a moderating ferroelectric to a thin film capacitor can be listed. As described in Tokaikai Hei 7-183165, although it is indicated that it is applicable to DRAM technology, but The particle size ranges from dozens of η. This paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) 439070 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ® 5. Description of the invention (order) 1 1 to several Hundred η 1 degree is only 200 degrees than the dielectric constant ft, which cannot obtain 1 1 1 originally high dielectric coefficient. Therefore, the use of a moderately strong dielectric 醴 for the dielectric 1 不能, can not achieve crystallization The grains are grown so that the dielectric constant of tfc is fully drawn. 1 1 髙 and the dielectric 酦 layer is to be a thin multilayer ceramic capacitor. 1 The back 1 will get a high specific dielectric number and can be reduced to a low-temperature sintered surface of 1 G 0 ° C or less. The tempered ferroelectric body promotes the full growth of its crystalline particles. It is suitable for attention. 1-layer ceramic capacitors. »For the miniaturization and low cost of multilayer ceramic capacitors, it is effective to fill in 1 and fill in 1 *. However, if the moderate type ferroelectric is allowed to grow in the grain size of m, the copybook X is not suitable for reliability and dielectric. The thin sheet of the plaque S- · 1 I title 0 1 | [Invention hundred 1 1 Therefore, the invention of the present invention is to provide a moderator layer using a moderately strong ferroelectric material. Small, high-capacity ceramic capacitors with 1 I * * Although the growth of dielectric ceramic crystal particles during firing can be avoided, I I will reduce reliability Multilayer ceramic capacitors 〇1 | In order to satisfy the above-mentioned invention, the ratio of the lithium perovskite 1 to the halogenated perovskite 1 radiographic compound represented by ΑB0, > contains V ions *, and the ratio A / Β 0 .9 7 5 or more composite perovskite compounds not found as 1.0 as the constituent material of the dielectric layer * The dielectric layer and the internal dielectric layer have a structure of a 1 1 phase build-up layer »and in the dielectric Thickness of the body layer 1 # Above and not 1 9 9 / ί Zu multilayer ceramic capacitors> It is to be regarded as the junction of the dielectric amt abrasive layer 1 1 Whether the average grain size of the crystal grains is the same as the thickness of the dielectric layer S or more than 1 1 3 ju η 〇1 1 At the same time, the above-mentioned perovskite compound A contains Pb ions 95% I or more t and / or B side contains Mg ions 5-* Zn ions at least one of 1 I 1 1 paper Music scale is applicable to China National Standard (CNS) A4 specification (210X297 male } 439070 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (f) 1 1 Used for laminated ceramic capacitors m 〇 And > For these composite calcium 1 1 I Titanium compounds ΑΒ0 as N n ions Those who add 1 nc > 1% or less of P nC or 1 other m compounds as the constituent material of the dielectric layer are special characteristics, please, 1 1 and f in these multilayer ceramic capacitors * The characteristic m is the internal electrode m and Table price Read 1 f 1 m alloy 9 and its treatment m is silver bb rate in silver alloy 50% below i 9C% above 0 Note • ι * I 事 1 [Simplified DCI description of 3 items Refill 1 Refill 1 The first picture is a schematic diagram of the method for obtaining the average size of crystalline particles written from the cross-section of a multilayer ceramic capacitor. Page 1 1 The second picture The static capacitance 1 I of the laminated ceramic capacitor of Example 1 was calculated to obtain a curve diagram of the dependence of the bh dielectric coefficient on the firing temperature. 1 FIG. 3 shows the insulation resistance of the multilayer ceramic container in Example 1. 1 Order 1 I resistance vs. firing temperature dependence graph. 4th far Figure 傜 shows the multilayer ceramic capacitor in Example 1 broken imr m Voltage 1 i (BDV) vs. firing temperature dependence curve < »1 I 5th plaque represents the line capacitance from the laminated ceramic capacitor of the second embodiment to calculate the calculated specific dielectric A graph showing the dependence of the number on the firing temperature 〇f The 6th series shows the curve of the insulation resistance 1 1 I resistance of the multilayer ceramic capacitor in Example 2 against the firing temperature t5t 圏 〇I The 7th image is shown in A graph of the dependence of the soil breaking voltage 1 I (BDV) of the multilayer ceramic capacitor of Example 2 on the firing temperature. 1 1 The 8th figure shows the static electricity of the multilayer ceramic capacitor in Comparative Example 1 1 1 The capacitance is calculated by calculating the specific dielectric 6%. The number is dependent on the firing temperature 1 1 1 1 1 This paper is for China National Standard (CNS) A4 specification (210X297 mm) A7 B7 439070 V. Description of invention (Γ) Curve country.
第9围係表示在比較例1的積雇陶瓷電容器的絶緣W 阻對於煅燒製粗度依賴性的曲線 第1G圖僳表示在比較例1的積雇陶瓷電容器的被壞電 壓（BDV)對於煅燒製溫度依賴性的曲$B° 〔實施例] 在本發明以緩和型強介電體亦卽ABG 3 胃 钛鑛化合物的A糊離子和8 _離乎的比率A/B差1促進 燒製以便可以低溫燒結，反面在燒结 第二相造成破壤信賴性的原因。一方面在A/B<1的粒 界不容易殘留第二相，但如果增大A側的不足率即被阻 礙燒結不能産生低溫燒结的特戲。可極力抑制其影響的 界限不足率像2.5%,亦即Α/Β=〇·97 5 β 蘭於介電體層的厚度，由於在使用鍰和型強介罨匾積 層陶瓷罨阻器具有所謂介電體層間的厚度7#η,結晶粒 徑約2#·的公知例，因此如果在介電體磨一層存在3餾 的結晶顆粒，邸可以説確保信頰性《因此如果將結晶粒 徑的下限設定為3# i只要有效介電體層的厚度9# Β以上， 儘管促使熱成長仍可從公知例推斷可確保信賴性。 有效介電體層的厚度低於9//·的積層陶瓷電容器，如 習用技術所示陶瓷的平均粒徑3// η以下時存在介電體1 一層平均存在三傾以上的結晶顆粒數 但如果平均粒徑 超過3;u«邸因場所而降低介電體層一層平均结晶顬粒的 粒界相，所謂是杏有存在第2層對於信賴性帶來重大影 本紙張尺度適用中囤國家標準（CNS ) A4規格（210 X 297公釐） {請先閲讀背面之注意事項再填寫本頁) -·· 1 經濟部智慧財產局員工消費合作社印製 43 90 7〇 A7 ____ B7_____ 五、發明説明（i?) (請先閲讀背面之注意事項再填寫本頁) 雄。亦即缓和型強介電體的A倒對於B細的存在比被限 定於本發明的比率^ 一方面如果介電醞層的厚度低於 3#»,即儘管只是存在一層平均結晶顆粒1傾平均粒徑 仍然變成a以下。此時如果想儘量加大介電鼸的比介 電傜數最好一層平均結晶頼粒一個，不過仍然必痛谋足 本發明的A/B側比率。此外，如果介電體層一層的厚度 達到1 MB以下。縱然一値結晶顆粒仍然變成1#*以下 的結晶粒徑降低比介電係數因此不能說是有益β 依以上所述的理由，在本發明的積層陶瓷電容器，其 構成要件為介電體層的厚度僳Ι/i·以上未谋9#·,構成 介電體層的结晶顆粒平均粒徑傜和介電體層的厚度相同 ，或超過3 # 1者β 經濟部智慧財產局員工消費合作社印製 在本發明以ΑΒ03表示的複合鈣鈦鑛化合物的Α側， 最好Pb為主，但儘管以一部份Ba, Sr或Ca離子置換也 可獲得相同的效果。但如果其置換比率越過5«；邸阻礙 燒製不能獲得低溫燒製的特微。因此，最好在複合鈣鈦 鑛化合物的A側含有Pb離子95%以上。而且，對於複合 鈣鈦纊化合物可能有多種组合，但如以1〇C以下使燒 製即必需對於B _的主成份但成含有W離子，Μ且最好 至少含有一種Hg離子，Ζη離子。而且和Ζη離子同時含有 Nb離子者同樣可使用。具體地來說，在本發明以ΑΒ0 3 表示的複合鈣鈦鑛化合物的適合例，傜PbUnl/2wl/2) P b ( « g 1 / 2 w 1 / 2 ) 0 3 , P b ( Ζ η 1 / 3 N b 2 / 3 ) 0 3 等。由於不含 有這些者的燒製溫度偽1B00-C至超過lDOlTC,因此雖發 -8 - 本紙張尺度適用中國國家標隼（CNS > A4規格（210X297公釐） 經濟部智慧財產局員工消費合作社印製 439070 A7 B7____ 五、發明説明（？） 現效果但不太理想<•而且，對於積層陶瓷電容器用的介 電體材料通常雖添加Hn,但Μ η的添加量作為Μ ϋ超過lB〇l% 即被阻礙燒製因此具有問題。所以在本發明，對於以 ΑΒ03表示的複合鈣鈦鑛化合物，最好將作為Μ η離子添 加lmol%以下的Ηη或其他錳化合物者作為介電體層的構 成材料。 而且，對於使用緩和型強介電醱的積雇陶瓷電容器雖 幾乎在内部電極使用銀耙合金，但如果在該合金的Ag比 率超過9 0 %溶解點即變成1 0 0 0"C以下因此不理想。一方 面如果使增加Pd的比率雖提高信賴性但也和提高成本有 闋聯，因此Pd的比率最好未谋50%。 雖使用實施例説明有闋本發明的詳細如下，但本發明 並不限定於這些實施例。 〔實施例1〕 将用於介電體材料的缕和型強介電黼主成份組成作為 30Pb (Mgl/2wl/2 ) 0 3 - 30Pb{Ni1/3Nb2/3 ) 0 3 -40PbTi03 , 作為副成份對於主成份1·〇1添加1.0*ol%的Pb(Hnl/3Nb2 /3>03 β並且對於主成分1·ο1選擇將PbO減少為I.OboI% 的组成β介電醱粉末依通常的氧化物法合成β亦即，秤 量各成份的氣化物（PbO, MgO, W03，Ni0,Nb2〇5 ,Ti〇2 ,MnC03 )以便形成額定比率以鋁心樹脂粒和樹脂筒將 水作為媒體混合72小時，經遇過濾，乾燥以75β〜800 eC 暫燒以後再度以前逑球磨機粉碎7 2小時，藉由使乾燥獲 得介電醴粉末《介電體粉末的粒徑為缘板的薄層化最好 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29?公釐） -------1---1------1T------0 (請先閲讀背面之注意事項再填寫本頁) 439070 A7 B7___ 五、發明説明（# ) 0.3// B以下》將所獲得的介電醱粉末和有機粘結劑一起 分散於有機熔媒中製作游渣，在載膜的上面以博士刀片 法製作8#·厚度的陶瓷綠板。在緦板上作為内部電棰以 绢版印刷法印刷銀把糊，乾燥後從載膜剝_緣板*切斷 ，稹層，熱壓附以後切斷為規定的Η形狀穫得積層陶瓷 電容器的生積層體。所使用的銀耙比傜銀75%， ，印刷内部電極的板積層數規定80Η»以4 50〜50(TC的 粘結劑分解生積層髅以後以90(TC〜1OO0-C燒製。藉由 在袈作的積層陶瓷電容器的兩端燒接銪糊形成端子電棰 製作積層陶瓷電容器。 從所製作積層陶瓷電容器的破斷面的掃描電子顯撤鏡 <SEK)以第1圖所示的方法從2次霍子像求出燒製體的結 晶頼粒的平均粒徑。亦即在照片上劃長度1*的直線以便 僅播越結晶頼粒，將其直線横越的结晶矚粒數假定為11 時將L/ η假定為平均粒徑D»分別在第2圖表示所製造 積層陶瓷電容器的平均粒徑和tb介電係數和燒製溫度的 閧係，在第3圈表示平均粒徑和絶緣電阻和燒製溫度的 關傜，在第4圖表示平均粒徑和絶緣破壞電壓（1βΡ的平 均值）和燒製溫度的關係，在表1表示在倍賴性評估試 驗的绝緣電阻累積不良數的數據。比介電俗數僳使用 LCR計附加iKHz-Vr»s的交流從拥定的靜電容量依計算求 出》計算公式如下： e=Cd/ «0^(η-1) 在此离Ε表示介電偽數，e ο表示在真空中的介電率， "10- 本紙張尺度適用中國固家標準（CNS )八4規格（21〇><297公着） I--------Ή------tT------^ (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 439070 A7 B7 五、發明説明（9 ) d表示介電體的有效層的厚度，S表示内部電捶有效重 *面積，η表示形成内部電楠的介電體層數。d、S係依 試樣的剖面觀察求出。 絶緣電阻僳從附加10VDC以後60秒後的汲棰電流值以 計算求出。绝緣破撖霉思傜以2QV/秒昇S附加霜壓， 將在電容器猗動1» A的電流時的電颳值作為絶線破银電 壓。信賴性評估試驗偽以125°C附加額定電壓X2的電S 時，及8 5 *C - 8 5〜9 5 % R Η %的高溫高濕下附加額定電壓 XI的電壓時藉由測定绝绨電阻的經時變化譌査。在本實 施例将額定電壓假定為101 表1 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局貞工消費合作社印製 Γ 1 1 ! 1 I |_I_L 100H 250H 500H 750H Ι000Η 2000H 3000H 1 1 1 1高温負荷試験丨880 t | 0/50 0/50 0/50 0/50 0/50 0/50 0/50 I 125 t：20 DCV 1 900 1c 1 0/50 0/50 0/50 0/50 0/50 0/50 0/50 1 1 920 t： 1 0/50 0/50 0/50 0/50 0/50 0/50 0/50 | | 940 t： | 0/50 0/50 0/50 0/50 0/50 0/50 0/50 1 1 960 ^ 1 0/50 0/50 0/50 0/50 0/50 0/50 0/50 I | 980 t | 0/50 0/50 0/50 0/50 0/50 0/50 0/50 耐湿負荷試験丨880 1 0/20 0/20 0/20 0/20 0/20 0/20 1/20 85¾ 10 DCV | 900 t | 0/20 0/20 0/20 0/20 0/20 0/20 0/20 85 〜95RH% | 920 | 0/20 0/20 0/20 0/20 0/20 0/20 0/20 | 940 t | 0/20 0/20 0/20 0/20 0/20 0/20 0/20 1 960 t | 0/20 0/20 0/20 0/20 0/20 0/20 0/20 I 980 | 0/20 0/20 0/20 0/20 0/20 0/20 0/20 本紙張尺度適用中國國家標準（CNS ) Α4規格夫i Γ0 X 297公釐） 439070 at B7 ---- -~----- 五、發明説明（、° ) 〔實施例2〕 將用於介電體材料的緩和型強介電體主成份組成作為 50Pb(Mgl/2wl/2)03 - 2 0 Pb (Znl/3fib2/3)0 a -30PbTi0 3 ,作為副成份對於主成份添加〇.5·ο1的Pb(Knl/3!)b2/3)〇3 ，並且對於主成份ΙβοΙ使用減少PbO 2.5nol的組成β介 電體粉末，積層陶瓷電容器傺桉照實施例所示的方法製 作。分別在第5圖表示積層陶瓷電容器的平均粒徑及比 介電偽數和燒製溫度的關偽，在第6圖表示平均粒徑和 絶緣電阻和燒製溫度的鬨傺，在第7圓表示绝编電阻的 破壊電壓和燒製溫度的關偽，表2表示信賴性評估轼驗 的绝緣電粗的累積不良數的數據，各恃性的測定方法锩 按照實施例所示的方法》 ------7---A------ΐτ------^ (請先聞讀背面之注意事項再填寫本頁} 經濟部智慧財產局員工消費合作杜印製 本紙張尺度適用中國國家標率（CNS ) A4規格（210X297公釐） 9〇 7 〇 A7 B7 五、發明説明（u ) 表 1 ί 1 1 100H 250H 500H 750H 1000H 2000H 3000 1 1 高溫負荷試験丨860 t | 0/50 0/50 0/50 0/50 1/50 1/50 2/50 125 ^20 DCV | 880 t | 0/50 0/50 0/50 0/50 0/50 0/50 0/50 1 900 t： 1 0/50 0/50 0/50 0/50 0/50 0/50 0/50 1 920 1 0/50 0/50 0/50 0/50 0/50 0/50 0/50 1 940 1 0/50 0/50 0/50 0/50 0/50 0/50 0/50 I 960 | 0/50 0/50 0/50 0/50 0/50 0/50 0/50 | 980 | _|_L_ 0/50 0/50 0/50 0/50 0/50 0/50 1/50 1 1 濕負荷試験1 860 t | 0/20 0/20 0/20 0/20 0/20 2/20 2/20 85¾ 10 DCV 丨 880 C ί 0/20 0/20 0/20 0/20 0/20 0/20 0/20 85 〜95RH% 1 900 1 0/20 0/20 0/20 0/20 0/20 0/20 0/20 1 920 1 0/20 0/20 0/20 0/20 0/20 0/20 0/20 1 940 1C 1 0/20 0/20 0/20 0/20 0/20 0/20 0/20 丨 960 1 0/20 0/20 0/20 0/20 0/20 0/20 0/20 1 980 ΐ) 1 0/20 0/20 0/20 0/20 0/20 0/20 0/20 (請先閱讀背面之注意事項再填寫本買) 經濟部智慧財產局§工消費合作社印製 〔比較例1〕 將用於介電體材料的緩和型強介電體主成份組成訂為 30Pb (Mgl/2wl/2)0 3 - 30Pb(Ni/3Nb2 /3 ) 0 3 - 40 PbTi0 3 ) 作為副成份對於主成份luol添加1.0 ·〇196的Pb(Knl/ 3Nb2/3)03。和實施例1不同，PbO對於B側B朗離子 的路數作為化學量缠董。介電體粉末，積層_瓷電容器 -13- 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 7〇 A7 B7 _ 五、發明説明（θ ) 偽按照實施例1所示的方法製作。分別在第8團表示積 層電容器的平均粒徑及比介電係數和燒製溫度的蘭傜， 在第9圈表示平均粒徑及绝緣電阻和燒製溫度的翮傜， 在第10画表示平均粒徑及絶絲破壊電匯和燒製溫度的關 偽，在表3表示在倍賴性評估試驗的绝綠電粗的累積不 良數的數據。各待性的測定方法係按照實施例1的方法〇 表3 I I I --1The ninth series shows the dependence of the insulation W resistance of the ceramic capacitor in Comparative Example 1 on the thickness of the sintered ceramics. Figure 1G shows the breakdown voltage (BDV) of the ceramic capacitor in Comparative Example 1 against the sintering. Temperature-dependent curve $ B ° [Example] In the present invention, the relaxation type ferroelectric substance is also treated as ABG 3 A paste ion of gastric titanite compound and 8 _ ratio of A / B difference 1 to promote firing In order to be able to sinter at low temperature, the reason for sintering the second phase caused sintering reliability. On the one hand, it is difficult for the second phase to remain at the grain boundary of A / B < 1, but if the deficiency rate on the A side is increased, sintering will be prevented and low temperature sintering cannot be produced. The marginal deficiency rate that can strongly suppress its influence is like 2.5%, that is, A / B = 〇 97 5 β the thickness of the dielectric layer. The thickness of the dielectric layer is 7 # η, and the crystal grain size is about 2 #. It is a well-known example. Therefore, if there are 3 distillate crystal particles in the dielectric grinding layer, it can be said that the chewing property is ensured. The lower limit is set to 3 # i. As long as the thickness of the effective dielectric layer is 9 # B or more, it can be inferred from known examples to ensure reliability even though thermal growth is promoted. For multilayer ceramic capacitors with an effective dielectric layer thickness of less than 9 // ·, as shown in the conventional technology, the average particle size of the ceramic is below 3 // η. Dielectrics are present. 1 There is an average number of crystal particles with more than three tilts. The average particle size is more than 3; u «Di reduces the grain boundary phase of the average crystalline grains in the dielectric layer due to the location. The so-called apricot exists. The second layer brings significant photographs for reliability. Paper standards apply to the national standard (CNS). ) A4 size (210 X 297 mm) {Please read the notes on the back before filling out this page)-·· 1 Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 43 90 7〇A7 ____ B7_____ V. Description of the invention (i ?) (Please read the notes on the back before filling out this page) Xiong. That is, the existence ratio of A to B of the moderate ferroelectric is limited to the ratio of the present invention. ^ On the one hand, if the thickness of the dielectric layer is less than 3 # », that is, although there is only one layer of average crystalline particles, 1 The average particle diameter remains below a. At this time, if you want to increase the ratio of the dielectric mass as much as possible, it is best to use one layer of average crystal grains, but it is still necessary to satisfy the A / B side ratio of the present invention. In addition, if the thickness of the dielectric layer is less than 1 MB. Even if the crystal grains still become less than 1 # *, the reduction of the specific dielectric coefficient cannot be said to be beneficial. For the reasons described above, in the multilayer ceramic capacitor of the present invention, the constituent element is the thickness of the dielectric layer.僳 Ι / i · The above does not seek 9 # ·, the average particle size of the crystal particles constituting the dielectric layer 傜 is the same as the thickness of the dielectric layer, or exceeds 3 # 1 β According to the invention, the A side of the composite perovskite compound represented by ΑB03 is preferably Pb, but the same effect can be obtained even though a part of Ba, Sr or Ca ions is substituted. However, if the replacement ratio exceeds 5 «, the characteristics of low-temperature firing cannot be obtained by hindering firing. Therefore, it is preferable to contain 95% or more of Pb ions on the A side of the composite perovskite compound. In addition, there may be various combinations for the composite perovskite compound, but if the firing is performed at 10 ° C or lower, it is necessary for the main component of B_ to contain W ions, M, and preferably at least one Hg ion, Zη ion. In addition, those containing Nb ions together with Zη ions can also be used. Specifically, in a suitable example of the composite perovskite compound represented by Αβ0 3 in the present invention, 傜 PbUnl / 2wl / 2) P b («g 1/2 w 1/2) 0 3, P b (Zn η 1/3 N b 2/3) 0 3 and so on. Because the firing temperature of these products does not contain 1B00-C to more than lDOlTC, it is issued -8-this paper size is applicable to the Chinese national standard (CNS > A4 specification (210X297 mm)) Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed 439070 A7 B7____ V. Description of the invention (?) The effect is not so good < • Moreover, the dielectric material for multilayer ceramic capacitors is usually added with Hn, but the amount of η added is more than 1B. l% is a hindrance to firing and therefore has a problem. Therefore, in the present invention, for a composite perovskite compound represented by Αβ03, it is preferable to add 1 mol% or less of Ηη or other manganese compounds as M η ions as the dielectric layer. The material of the structure. For the ceramic capacitors using moderately strong ferroelectric rhenium, although the silver rake alloy is almost used for the internal electrode, if the Ag ratio of the alloy exceeds 90%, the melting point will become 1000 0 " C. Therefore, the following is not ideal. On the one hand, if the ratio of increasing Pd is increased to improve reliability, it is also associated with cost increase. Therefore, the ratio of Pd is preferably not 50%. The details of the present invention are as follows, but the present invention is not limited to these examples. [Example 1] The composition of the main component of the strand and type ferroelectric 黼 used for the dielectric material is 30Pb (Mgl / 2wl / 2). 3-30Pb {Ni1 / 3Nb2 / 3) 0 3 -40PbTi03, add 1.0 * ol% of Pb (Hnl / 3Nb2 / 3 > 03 β as the main component to the main component 1 · 〇1 and select the main component 1 · ο1 The composition of PbO reduced to I. OboI% β Dielectric rhenium powder is synthesized by the usual oxide method β, that is, the gaseous components of each component (PbO, MgO, W03, Ni0, Nb205, Ti〇2, MnC03) In order to form a rated ratio, the aluminum core resin pellets and the resin cartridge were mixed with water as a medium for 72 hours, filtered and dried at 75β ~ 800 eC. After temporary heating, it was pulverized by a ball mill for 7 2 hours, and the dielectric was obtained by drying. Powder "The diameter of the dielectric powder is best for thinning of the edge plate. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X29? Mm) ------- 1 --- 1-- ---- 1T ------ 0 (Please read the precautions on the back before filling this page) 439070 A7 B7___ V. Description of the invention (#) 0.3 // B or less酦 The powder and organic binder are dispersed together in an organic solvent to make slag. On the top of the carrier film, a ceramic green board with a thickness of 8 # · is produced by the doctor blade method. The screed board is used as an internal electrode and the screen printing method is used. The silver paste is printed, peeled off from the carrier film and dried after cutting, and the layer is cut. After thermocompression, it is cut into a predetermined shape to obtain a multilayer ceramic capacitor. The silver rake used is 75% lower than 傜 silver, and the number of laminated layers for printing internal electrodes is specified to be 80Η ». The binder is decomposed by 4 50 ~ 50 (TC, and then the laminated layer is fired at 90 (TC ~ 1000-C. Borrow. A multilayer ceramic capacitor is fabricated by burning paste on both ends of a multilayer ceramic capacitor to form a terminal. A scanning electron display mirror < < SEK > from the broken surface of the multilayer ceramic capacitor produced is shown in Fig. 1 Method to obtain the average particle size of the crystal grains of the fired body from the second-time horoscope image. That is, draw a straight line of length 1 * on the photo so that only the crystal grains are broadcast, and the number of crystal grains crossed by the straight line When it is assumed to be 11 and L / η is assumed to be the average particle diameter D », the average particle diameter, the dielectric constant of tb and the firing temperature of the multilayer ceramic capacitor manufactured are shown in Fig. 2, respectively, and the average particle diameter is shown in the third circle. The relationship between the diameter and the insulation resistance and the firing temperature is shown in Fig. 4. The relationship between the average particle diameter and the insulation breakdown voltage (the average value of 1βP) and the firing temperature is shown in Table 1. The data of the accumulated resistance number of resistance. Compared with the dielectric value, iKHz-Vr is added using the LCR meter. The exchange of s is obtained from the determined electrostatic capacity according to the calculation. The calculation formula is as follows: e = Cd / «0 ^ (η-1) where ε indicates the dielectric pseudo-number and e ο indicates the dielectric constant in a vacuum. &Quot; 10- This paper size is applicable to China Solid Standard (CNS) 8-4 specification (21〇 > < 297) by I -------- Ή ------ tT --- --- ^ (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 439070 A7 B7 V. Description of the invention (9) d indicates the thickness of the effective layer of the dielectric, S indicates The effective weight of the internal electric field * area, η represents the number of dielectric layers forming the internal electric field. D and S are obtained by observing the cross-section of the sample. Calculated and calculated. Insulation breakers use 2QV / s liter S additional frost pressure, and the electric scraping value when the capacitor is pulsating a current of 1 »A is used as the absolute wire breaking silver voltage. The reliability evaluation test is assumed to be 125. ° C When the electric voltage S of the rated voltage X2 is added, and when the voltage of the rated voltage XI is added at a high temperature and humidity of 8 5 * C-8 5 ~ 9 5% R Η% In this example, the rated voltage is assumed to be 101. Table 1 (Please read the notes on the back before filling out this page) Printed by Zhenong Consumer Cooperative, Intellectual Property Bureau, Ministry of Economic Affairs Γ 1 1! 1 I | _I_L 100H 250H 500H 750H Ι000Η 2000H 3000H 1 1 1 1 High temperature load test 880 880 t | 0/50 0/50 0/50 0/50 0/50 0/50 0/50 I 125 t: 20 DCV 1 900 1c 1 0/50 0/50 0 / 50 0/50 0/50 0/50 0/50 1 1 920 t: 1 0/50 0/50 0/50 0/50 0/50 0/50 0/50 | | 940 t: | 0/50 0/50 0/50 0/50 0/50 0/50 0/50 1 1 960 ^ 1 0/50 0/50 0/50 0/50 0/50 0/50 0/50 I | 980 t | 0 / 50 0/50 0/50 0/50 0/50 0/50 0/50 Moisture resistance test 880 880 1 0/20 0/20 0/20 0/20 0/20 0/20 1/20 85¾ 10 DCV 900 t | 0/20 0/20 0/20 0/20 0/20 0/20 0/20 85 to 95RH% | 920 | 0/20 0/20 0/20 0/20 0/20 0/20 0/20 | 940 t | 0/20 0/20 0/20 0/20 0/20 0/20 0/20 1 960 t | 0/20 0/20 0/20 0/20 0/20 0/20 0/20 I 980 | 0/20 0/20 0/20 0/20 0/20 0/20 0/20 This paper size applies to the Chinese National Standard (CNS) Α4 size husband i Γ0 X 297 mm) 439070 at B7 -----~ ----- 5. Explanation of the invention (, °) [Real Example 2] The main composition of the moderate ferroelectric material used for the dielectric material is 50Pb (Mgl / 2wl / 2) 03-2 0 Pb (Znl / 3fib2 / 3) 0 a -30PbTi0 3 The component is added with Pb (Knl / 3!) B2 / 3) 〇3 for the main component, and β dielectric powder which reduces the composition of PbO 2.5nol for the main component ΙβοΙ. Prepared by the method shown in the example. Figure 5 shows the average particle size of the multilayer ceramic capacitor, the specific dielectric pseudo-number, and the firing temperature, and Figure 6 shows the mean diameter, the insulation resistance, and the firing temperature. In the seventh circle, Shows the breaking voltage and firing temperature of the absolute resistance. Table 2 shows the data of the cumulative failure number of the insulation thickness measured by the reliability evaluation test. The measurement method of each property is according to the method shown in the example. " ------ 7 --- A ------ ΐτ ------ ^ (Please read the notes on the back before filling out this page} Printed by the Intellectual Property Bureau of the Ministry of Economy This paper size applies to China National Standards (CNS) A4 specifications (210X297 mm) 9〇〇〇7 B7 V. Description of invention (u) Table 1 ί 1 1 100H 250H 500H 750H 1000H 2000H 3000 1 1 High temperature load test 験 860 t | 0/50 0/50 0/50 0/50 1/50 1/50 2/50 125 ^ 20 DCV | 880 t | 0/50 0/50 0/50 0/50 0/50 0/50 0 / 50 1 900 t: 1 0/50 0/50 0/50 0/50 0/50 0/50 0/50 1 920 1 0/50 0/50 0/50 0/50 0/50 0/50 0 / 50 1 940 1 0/50 0/50 0/50 0/50 0/50 0/50 0/50 I 960 | 0/50 0/50 0/50 0/50 0/50 0/50 0/50 | 980 | _ | _L_ 0/50 0/50 0/50 0/50 0/50 0/50 1/50 1 1 Wet load test 1 860 t | 0/20 0/20 0/20 0/20 0/20 2 / 20 2/20 85¾ 10 DCV 丨 880 C ί 0/20 0/20 0/20 0/20 0/20 0/20 0/20 85 to 95RH% 1 900 1 0/20 0/20 0/20 0 / 20 0/20 0/20 0/20 1 920 1 0/20 0/20 0/20 0/20 0/20 0/20 0/20 1 940 1C 1 0/20 0/20 0/20 0 / 20 0/20 0/20 0/20 丨 960 1 0/20 0/20 0/20 0/20 0/20 0/20 0/20 1 980 ΐ) 1 0/20 0/20 0/20 0 / 20 0/20 0/20 0/20 (Please read the precautions on the back before filling in this purchase) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs § Printed by the Industrial and Consumer Cooperatives [Comparative Example 1] It will be used for the relaxation of dielectric materials The composition of the main component of the dielectric is set to 30Pb (Mgl / 2wl / 2) 0 3-30Pb (Ni / 3Nb2 / 3) 0 3-40 PbTi0 3) As a subcomponent, the main component luol is added with 1.0 · 〇196 of Pb (Knl / 3Nb2 / 3) 03. Different from Example 1, the number of ways of PbO for B-side B-ion ions is used as the stoichiometry. Dielectric powder, laminated _ porcelain capacitor -13- This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) 7〇A7 B7 _ V. Description of the invention (θ) Pseudo-as shown in Example 1 Method of making. In the eighth group, the average particle diameter of the multilayer capacitor, the specific dielectric constant, and the firing temperature are shown. In the ninth circle, the mean particle diameter, the insulation resistance, and the firing temperature are shown. Table 3 shows the average particle diameter, the breakage of the wire, and the firing temperature, and Table 3 shows the data of the cumulative number of defects in the absolute green electricity in the reliability evaluation test. The determination method of each property is in accordance with the method of Example 1. Table 3 I I I --1
I I | 100H 250H 500H 750H 1000H 2000H 3000H ^i'n n n m -- ; I I (請先閱讀背面之注意事項再填寫本f)I I | 100H 250H 500H 750H 1000H 2000H 3000H ^ i'n n n m-; I I (Please read the notes on the back before filling in this f)
高温負荷轼驗 125 t：20 DCV 880 V 900 920 X： 940 t； 960 t 980 t 0/50 0/50 1/50 1/50 2/50 2/50 2/50 0/50 0/50 0/50 0/50 0/50 1/50 1/50 0/50 2/50 5/50 6/50 15/50 18/50 32/50 0/50 3/50 12/50 18/50 35/50 50/50 34/50 50/50 50/50 訂 經濟部智慧財產局員4消費合作社印製 附濕負荷試験 85¾ 10 DCV 85〜95RH% 880 900 V 920 V 940 *υ 960 1C 980 t： 0/20 0/20 0/20 1/20 1/20 2/20 2/20 0/20 0/20 0/20 0/20 1/20 1/20 1/20 0/20 1/20 1/20 1/20 2/20 4/20 6/20 2/20 2/20 3/20 4/20 5/20 5/20 7/20 5/20 8/20 13/20 15/20 20/20 12/20 20/20 -14- 本紙張尺度適用中國國家標準（CNS ) A4規格（210 297公釐） 經濟部智慧財產局員工消費合作社印製 43907ο A7 B7 五、發明説明（θ) 本發明對於電氣的待性（比介霉傜數，絶線電阻），破 壤锺壓，高溫負荷特性，射墉負荷特性帶來倍賴性評估 的效果，如果看實施例和比較例即可明白。亦即，在含 有W或W和Zn的組成条，儘管將減少Pbo的組成用於介 電麟仍以9Q0°C前後的燒製充份提高比介電係數。所謂 如柬增大平均粒徑即增大比介電依數以傾向雖然無論在 實旅例，比較例任何一種都可以看到但比介電#數如欲 高於15000畤可以說必需燒製體結晶的平均粒徑特別看 到绝緣電阻，破壞電壓的降低。而且在高溫負載試驗， 耐藤負荷試驗也幾乎未發現因故障的绝綠電阻降低。雖 然以88(TC至860"C燒製發生不良，但認為那是因為燒製 溫度低而燒製有一些不夠。 相對地在比較例，如果平均粒徑燒製至超過3；«·難然 提高比介電像數但降低绝緣電阻，破壊電壓，尤其是在 高溫負荷試驗，耐濕負荷試驗隨著提高燒製溫度而顯箸 増加因故障以绝綠霍阻不良的累稍數。 因此在實施例所示的组成以外雖略提高燒製溫度但可 獲得和實施例所示結果相同的傾向。而且，雖因組成& 而重大改變tb介電傜數，但如欲獲得介電醱本來的比介 罨偽數，最好仍然將结晶的平均粒徑設定為3# B以上。 -15- 本紙張尺度通用中國國家標準（CNS ) Λ4規格（2丨0X297公釐） ---------Λ------、1Τ------ »*- (請先閲讀背面之注意事項再填寫本頁)High temperature load test 125 t: 20 DCV 880 V 900 920 X: 940 t; 960 t 980 t 0/50 0/50 1/50 1/50 2/50 2/50 2/50 0/50 0/50 0 / 50 0/50 0/50 1/50 1/50 0/50 2/50 5/50 6/50 15/50 18/50 32/50 0/50 3/50 12/50 18/50 35/50 50/50 34/50 50/50 50/50 Ordered by the Intellectual Property Bureau of the Ministry of Economic Affairs 4 Printed with a wet load test by a consumer cooperative 85¾ 10 DCV 85 ~ 95RH% 880 900 V 920 V 940 * υ 960 1C 980 t: 0/20 0/20 0/20 1/20 1/20 2/20 2/20 0/20 0/20 0/20 0/20 1/20 1/20 1/20 0/20 1/20 1/20 1 / 20 2/20 4/20 6/20 2/20 2/20 3/20 4/20 5/20 5/20 7/20 5/20 8/20 13/20 15/20 20/20 12/20 20 / 20 -14- This paper size applies the Chinese National Standard (CNS) A4 specification (210 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 43907ο A7 B7 V. Description of the invention (θ) The electrical properties of the invention (The number of specific molds, absolute resistance), soil breaking pressure, high temperature load characteristics, and shot load characteristics bring the effect of multiplicity evaluation, which can be understood by looking at the examples and comparative examples. That is, in a composition bar containing W or W and Zn, the specific dielectric coefficient was sufficiently improved by firing around 9Q0 ° C despite the reduction of the composition of Pbo for the dielectric substrate. It is said that if the average particle diameter is increased, the specific dielectric factor is increased. Although it can be seen in any of the actual travel examples and comparative examples, it can be said that firing is necessary if the number of dielectric # is higher than 15000. In particular, the average particle size of the bulk crystal shows a reduction in insulation resistance and a breakdown voltage. In addition, in the high-temperature load test and the rattan load test, almost no decrease in the green resistance due to failure was found. Although the firing at 88 (TC to 860 " C) is defective, it is considered that firing is not enough because the firing temperature is low. In the comparative example, if the average particle diameter is fired to more than 3; Increasing the specific dielectric number but lowering the insulation resistance and breaking voltage, especially in the high temperature load test, the humidity load test is significantly increased with the increase of the firing temperature, and the number of failures due to the poor green resistance is accumulated. Although the firing temperature is slightly increased except for the composition shown in the examples, the same tendency as that of the results shown in the examples can be obtained. Furthermore, although the tb dielectric number is significantly changed due to the composition & It is better to set the average particle size of the crystal to be more than 3 # B. -15- The paper size is generally the Chinese National Standard (CNS) Λ4 specification (2 丨 0X297 mm) ---- ----- Λ ------, 1Τ ------ »*-(Please read the notes on the back before filling in this page)