TW436665B - Photomask with lines of auxiliary feature and original feature - Google Patents

Abstract

The present invention provides a photomask with lines of auxiliary feature and original feature, which comprises more than two neighboring lines of original feature which has a line width respectively and which are mutually parallel to each other with equal-distance substantially, and there is a spacing between two original feature lines. In addition, there is at least one inner auxiliary feature allocated between two original feature lines when the spacing/line width ratio is about 3 to 6.5. Also, there are two external auxiliary features allocated at the outer rim of the left most and right most original feature lines respectively, wherein there is a certain distance of spacing between each external auxiliary feature and the closest original feature line.

Description

436665

V. Description of the invention (1) 5 -1 Field of the invention ′ In particular, the present invention relates to a lithography system component and a photomask having an auxiliary pattern. 5-2 Background of the Invention The exposure technology used for pattern transfer between photomask and photoresist mainly includes three types: contact type, proximity type, and projection type. However, for the deep sub-micron semiconductor process technology, the precision of the optical technique is still greatly limited by the optical resolution. Due to the limitation of the optical resolution, the pattern transfer has errors and even fails. Taking the proximity exposure technology as an example, the transfer pattern obtained after exposure has changed from the original mask pattern. ^

If the original pattern lines of the photomask are very isolated from each other, ^ buckle 丨 to), * means that the spacing between the lines is much larger than the line width, so that the spacing / line width ratio is greater than about 6.5, then familiar with this The artist will add auxiliary patterns to the outer edge of each isolated original pattern line to get enough process window. Enough process space to ensure that the transferred pattern lines are substantially the same as the original pattern lines of the original mask. On the other hand, if the original pattern lines of the photomask are very close to each other, that is, the spacing between adjacent lines is reported to be small, as small as the spacing / line width ratio is below 3.0, then those who are familiar with this technique # The outer edge of the outer line with auxiliary patterns

Page 4 43666 5 V. Description of the invention (2) Without adding auxiliary patterns between the lines. Because in that case, adding an auxiliary pattern 'between the lines can easily cause sidelobe problems or increase mask-error factors. However, the “semi-dense area on the reticle”, that is, the area with a pitch / line width ratio f of about 3.0-6.5, will be a dilemma for those skilled in the art. That ’s ‘if you do n’t add auxiliary patterns between the original pattern lines, you may not get enough process space, but if you have to add auxiliary patterns like the periphery between the original patterns, it may cause edge problems.

Or increase the mask error factor. This is one of the problems to be solved by the present invention. Objects and Summary of the Invention One of the purposes of the present invention is to provide a semi-dense semi-dense original pattern line that contains auxiliary graphics. According to the foregoing and other objectives, the present invention proposes a photomask including ass feature and original pattern lines. The photomask has two or more adjacent photomasks, which are substantially parallel to each other and equidistant from each other. An original pattern line with a line width 'and a space between the two original pattern lines. In addition, there are two outer auxiliary patterns, which are respectively arranged on the outer edges of the leftmost and rightmost original pattern lines, where each outer auxiliary circle is drawn with a width of and between the closest original pattern line =. Furthermore, it has at least one internal auxiliary pattern, and the configuration 丄 =

436665 V. Description of the invention (3) Between the lines of the case, when the above-mentioned pitch / line width ratio is about 3 to 6.5. The inner auxiliary pattern has a preferred second width that is substantially narrower than the first width. When the pitch / line width ratio is about 3 to 4, β, among which, the better first · width is about the first width multiplied by 0. '7 0.8. In addition, it is best to multiply the first wide yield by 0.75. When the pitch / line width ratio is about 5.4 to 6.5, there may be two internal auxiliary patterns, and each of the internal auxiliary patterns is separated from the closest original pattern line by a distance.

The configuration of the inner auxiliary pattern which is substantially narrower than the outer auxiliary pattern between the line segments can provide sufficient process space, and it is not easy to cause si de lobes problems or increase mask-error errors 5 ~ 4 Brief description of the drawings: * f makes the above and other objects, features, and advantages of the present invention more obvious. Γ, _ The following exemplifies preferred embodiments, and makes detailed comments in conjunction with the attached drawings. As follows: The first scene ... shows a part of an example (mask) according to the present invention; rth Λ: shows a partial scene according to the present invention (a patterned optical lithography—a patterned optical lithography A patterned optical lithography third enclosure drawing according to an example of the present invention

436665

V. Description of the invention (4) Part of the mask (mask); The fourth figure shows a part of a patterned optical lithography mask (mask) according to Example 4 of the present invention; and fifth The figure shows a part of a patterned optical lithographic mask (mask) according to Example 5 of the present invention. The main part of the label description: 100, 200, 300, 400, 500 part of the optical lithography mask (mask) 102, 202, 302, 402, 502 line segment 104, 204, 304, 404, 504 outer edge auxiliary Patterns 206, 306, 406, 506 Inner auxiliary patterns SI, S2, S3, S4 'S5 Pitch L Line width, d4 width 5-4 Preferred embodiments Several specific embodiments

In the following, we will describe several photomasks that can be implemented according to the present invention. Example 1 The first figure shows a portion 100 of a patterned optical lithographic mask (reticle). Please refer to the first figure, the part 100 includes-the groups are parallel to each other, and

Page 7 436665 V. Description of the invention (5) Line segments 1 02, which are substantially equally spaced, each line segment 02 represents a portion of the original pattern line with a line width L. There is a substantially equal pitch Si between adjacent line segments 〇2, so that Si / L < 3. The spacing between the line segments 102 is substantially completely transparent. There are two auxiliary features (assist features s) 104 arranged on the outer edges of the leftmost and rightmost segments, respectively. Each auxiliary pattern 104 on the outer edge has a width D 'and is spaced apart from the nearest line segment by a certain distance. Example two

The second figure shows a part of another patterned optical lithographic mask (mask). This part 200 includes a set of line segments 202 that are parallel to each other and are substantially equally spaced. Each line segment 202 represents a portion of an original pattern line having a line width L. There are two auxiliary patterns 204 arranged on the outer edges of the leftmost and rightmost line segments, respectively. Each of the auxiliary patterns 204 on the outer edge has a width D 'and is separated from the nearest line segment by a certain distance. The line segment of this example is roughly similar to the first example, but the difference is that the distance S2 between adjacent line segments 202 »where S2 > Si, and S2 / L = 3-4 〇

In Example 2, in addition to the auxiliary pattern 204 on the outer edge, two other inner auxiliary patterns 206 are respectively arranged between the line segments. The preferred width d2 of each inner auxiliary pattern 206 is substantially narrower than the width D of each outer auxiliary pattern 204. Because in this case of S2 / L = 3-4, if an internal auxiliary pattern with a width of D is added between the line segments 202, it is likely to cause sidelobes problems, or add other mask error factors (mask- errorfactors) ° better

Page 8 436665 V. Description of the invention (6) Auxiliary pattern width (12 is about 0.7-0.81), especially 0.7751 is preferred. Example 3 Please refer to the third figure, which is shown as a part 300 of a patterned optical lithographic mask (reticle). In Example 3 (third picture), the situation of the line segment 302 is substantially the same as that of Example 2 (but the auxiliary pattern 304 is different) 'except that its Sa / L value is about 4- 5, 4. The width of each auxiliary pattern 3 0 4 arranged between the line segments 302 is substantially equal to the width of each outer edge auxiliary pattern as described in Example 2 and Example ^ Example 4 The fourth figure shows another patterned optical micro Part of the shadow mask (mask) 4 0 0. This part 400 includes a set of line segments 402 that are parallel to each other and are substantially equally spaced. Each line segment 402 represents a portion of an original pattern line having a line width l. Between adjacent line segments 402, there is a substantially equal distance S4 ', where & several = 5. 4-6. The spacing between the line segments 402 is substantially completely transparent. There are two auxiliary patterns 404 arranged on the outer edges of the leftmost and rightmost segments, respectively. Each auxiliary pattern 400 on the outer edge has a width D, and each is separated from the nearest line segment by a certain distance. In addition to the auxiliary pattern 404 on the outer edge, two other inner auxiliary patterns 406 are respectively disposed between the line segments 402. The preferred f degree of each inner auxiliary pattern 406 is substantially narrower than the width D of each outer edge auxiliary pattern 404. Because in this case of 1/1 ^ 5.4-6.5, if you add two between the line segments 402

^ 36665 V. Description of the invention (7)-An internal auxiliary pattern with a width of D is apt to cause side lobes problems or other error factors of the photomask. On the other hand, the process window obtained by adding an auxiliary pattern with a width D between the line segments 402 is not enough. Therefore, I arrange two auxiliary patterns 406 between the adjacent line segments 402, and the individual preferred widths of seven are about 0.7_0.8 D, among which 0.775D is better. Example five

Please refer to FIG. 5 'which shows a patterned optical lithography mask (light,) 5 0 0 In Example 5, the situation of line segment 502 is substantially the same as that of Example 4 (but auxiliary The pattern 504 is different), but its & / [> 6, 5 each auxiliary pattern 504 width d arranged between the line segments 502 is substantially equal to each of the examples 1 to 4 The width of the peripheral edge auxiliary pattern is described. The previously described examples of the present invention have many advantages. For example, when the pitch / line width ratio is approximately equal to 3-4 or 5 · 4_6 · 5, the inner auxiliary pattern that is substantially narrower than the outer auxiliary pattern can be provided between the line segments, which can provide sufficient process space, and It is not easy to cause problems with sags or increase mask error factors.

Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make equivalent changes or modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention is determined by the scope of the attached patent application.

Claims (1)

436665 VI. Application for patent scope 1. An original pattern line containing two or more auxiliary patterns adjacent to the original and substantially similar to the original pattern, and at the two distances, the photomask further includes two external auxiliary patterns of the following components, respectively. The outer edge of the line, where each 'and at least one inner auxiliary pattern of the closest original pattern line,' is a mask of pattern lines at the pitch / line width ratio of about 3, and the masks are equidistantly parallel, And each has a line-width original pattern line having a space between the leftmost and right-most original outer auxiliary patterns each having a first width spaced apart by a certain distance; and the two original pattern lines Until 6, 5 hours. 2. The light according to item 1 of the scope of the patent application has a second width that is substantially narrower than the first-when the ratio is about 3 to 4. The mask 'wherein the width of the inner auxiliary pattern is at the pitch / line width 3. The mask described in item 2 of the scope of the patent application multiplies the first width by 0.7-0.8. Where the second width is about 4. ^ The mask described in item 3 of the scope of patent application is multiplied by 0,75 for the first width. Where the second width is about 5. · As there are two items in the scope of the patent application, the inner auxiliary patterns are the closest to the photomask in the pitch / line width. Each original pattern line is separated by a distance. Page 436665 Six 'patent application range 6. The photomask as described in item 5 of the patent application scope, which has a third width substantially narrower than the first width. 7. The photomask according to item 6 of the scope of patent application, wherein the third width is approximately the first width multiplied by 0.7-0.8. 8. The photomask according to item 7 of the scope of patent application, wherein the third width is approximately the first width multiplied by 0.75. 9. A mask containing auxiliary patterns and original pattern lines, the mask having two or more adjacent original pattern lines that are substantially equidistant from each other and each have a line width, and There is a “spacing” between the lines, wherein the spacing / line width ratio is about 3 or more, and the mask further includes the following components: at least one inner auxiliary pattern disposed between the two original pattern lines; and, two outer The auxiliary patterns are respectively arranged on the outer edges of the leftmost and rightmost original pattern lines, wherein each outer auxiliary pattern has a first width and is separated from the closest original pattern lines by a certain distance. 10. The photomask according to item g of the patent application scope, wherein the inner auxiliary pattern has a second width that is substantially narrower than the first width when the pitch / line width ratio is about 3 to 4. 436665 6. Scope of patent application 11. The photomask according to item 10 of the scope of patent application, wherein the second width is approximately the first width multiplied by 0.7 to 0.8. 12. The reticle according to item 11 of the scope of patent application, wherein the second width is approximately the first width multiplied by 0,7 5. 1 3. The photomask according to item 9 of the scope of patent application, wherein the inner auxiliary pattern has two in total, when the pitch / line width ratio is about 5.4 to 6.5, and each of the inner auxiliary patterns Are separated from the closest original pattern lines. 14. The photomask according to item 13 of the scope of patent application, wherein the inner auxiliary patterns have a third width that is substantially narrower than the first width. 7-0. 8。 15. The reticle described in item 14 of the scope of patent application, wherein the third width is approximately the first width multiplied by 0.7 to 0.8. 16. The photomask according to item 15 of the scope of patent application, wherein the third width is approximately the first width multiplied by 0.75. Page 13