TW436665B - Photomask with lines of auxiliary feature and original feature - Google Patents
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436665436665
五、發明說明(1) 5 -1發明領域 ’特別是有關於一 本發明係有關於一種微影系統構件 種具有辅助圖案的光罩。 5-2發明背景 光罩與光阻間之圖案轉移所使用之曝光技術,目前主 要有:接觸式、近接式(Proximity)、與投影式等三種。 然而’對於深次微米的半導體製程技術而言了^光^術之 精密程度仍大大地受限於光學解析度,由於光學解析度的 限制而使得圖案的轉移產生誤差甚而失敗。以近接式之曝 光技術為例,在進行曝光後所得之轉移圖案已愈原始光罩 圖案產生差異。 ^V. Description of the invention (1) 5 -1 Field of the invention ′ In particular, the present invention relates to a lithography system component and a photomask having an auxiliary pattern. 5-2 Background of the Invention The exposure technology used for pattern transfer between photomask and photoresist mainly includes three types: contact type, proximity type, and projection type. However, for the deep sub-micron semiconductor process technology, the precision of the optical technique is still greatly limited by the optical resolution. Due to the limitation of the optical resolution, the pattern transfer has errors and even fails. Taking the proximity exposure technology as an example, the transfer pattern obtained after exposure has changed from the original mask pattern. ^
口如果光罩的原始圖案線條彼此很孤立^扣丨以以),* 就是說線條之間的間距比起線寬來說大得报多,使得間距 /線寬比大於約6.5,那麼熟悉此技藝者會在每個孤立的原 始圖案線條外緣加上輔助圖案,以得到足夠的製程空間( process window )。夠大的製程空間才能確保轉移後的圖 案線條可:和原來光罩的原始圖案線條實質上相同。從另 -方面來如果光罩原始圖案線條彼此很緊密,也就是 相鄰線條之間的間距报小,小到間距/線寬比在3· 〇以下, 那麼熟悉此技#者只會在最外圍的線條外緣加上辅助圖案If the original pattern lines of the photomask are very isolated from each other, ^ buckle 丨 to), * means that the spacing between the lines is much larger than the line width, so that the spacing / line width ratio is greater than about 6.5, then familiar with this The artist will add auxiliary patterns to the outer edge of each isolated original pattern line to get enough process window. Enough process space to ensure that the transferred pattern lines are substantially the same as the original pattern lines of the original mask. On the other hand, if the original pattern lines of the photomask are very close to each other, that is, the spacing between adjacent lines is reported to be small, as small as the spacing / line width ratio is below 3.0, then those who are familiar with this technique # The outer edge of the outer line with auxiliary patterns
第4頁 43666 5 五、發明說明(2) 而不會在線條之間加上輔助圖案。因為,在那樣的情況 下在線條間加上輔助圖案’容易造成有邊垂(sidelobe)問 題或者增加光罩錯誤因素(mask-error factors)。 然而’在光罩上的半密集區域’也就是間距/線寬比 f約3· 0-6. 5的區域,熟悉此技藝者會遇到一個兩難的問 題。那就是’如果不在原始圖案線條之間加入輔助圖案, 可能無法得到夠大的製程空間,但如果硬要在原始圖案之 間加入像外圍那樣的輔助圖案,則可能會引發邊垂問題,Page 4 43666 5 V. Description of the invention (2) Without adding auxiliary patterns between the lines. Because in that case, adding an auxiliary pattern 'between the lines can easily cause sidelobe problems or increase mask-error factors. However, the “semi-dense area on the reticle”, that is, the area with a pitch / line width ratio f of about 3.0-6.5, will be a dilemma for those skilled in the art. That ’s ‘if you do n’t add auxiliary patterns between the original pattern lines, you may not get enough process space, but if you have to add auxiliary patterns like the periphery between the original patterns, it may cause edge problems.
或者增加光罩錯誤因素。這正是本發明所要解決的問題點 之一0 5 - 3發明目的及概述 本發明的目的之一,在於提供一種在半密集( semi-dense)原始圖案線條之間含有輔助圖荦的先里 本發明根據上述及其他目的,提出一圖種案含的有 (ass i st feature)與原始圖案線條的光罩,此光罩具有兩 條以上相鄰、且實質上相互等距平行、並各具有一線寬之 原始圖案線條’且在兩條原始圖案線條之間具有一間距。 此外,尚有兩個外輔助圖案,分別配置在最左邊和最右邊 之原始圖案線條的外緣,其中每個外輔助圈牵 -寬度,且和最接近的原始圖案線條之間= 。甚者,更具有至少-個内輔助圖案,配置丄=Or increase the mask error factor. This is one of the problems to be solved by the present invention. Objects and Summary of the Invention One of the purposes of the present invention is to provide a semi-dense semi-dense original pattern line that contains auxiliary graphics. According to the foregoing and other objectives, the present invention proposes a photomask including ass feature and original pattern lines. The photomask has two or more adjacent photomasks, which are substantially parallel to each other and equidistant from each other. An original pattern line with a line width 'and a space between the two original pattern lines. In addition, there are two outer auxiliary patterns, which are respectively arranged on the outer edges of the leftmost and rightmost original pattern lines, where each outer auxiliary circle is drawn with a width of and between the closest original pattern line =. Furthermore, it has at least one internal auxiliary pattern, and the configuration 丄 =
436665 五、發明說明(3) 案線條之間,在上述間距/線寬比約為3至6. 5之時。 上述内輔助圖案具有一較佳之第二寬度實質上窄於第 一寬度,在間距/線寬比約為3至4之時β其中,更佳的第 一·寬度約為第一寬度乘上〇’7 0.8。此外,又以第^一寬产 乘上0. 75為最佳。 又 在間距/線寬比約為5. 4至6. 5時,上述内輔助圖案可 共有兩個,,且其中每個内輔助圖案都和最接近的原始圖 案線條隔有一段距離。436665 V. Description of the invention (3) Between the lines of the case, when the above-mentioned pitch / line width ratio is about 3 to 6.5. The inner auxiliary pattern has a preferred second width that is substantially narrower than the first width. When the pitch / line width ratio is about 3 to 4, β, among which, the better first · width is about the first width multiplied by 0. '7 0.8. In addition, it is best to multiply the first wide yield by 0.75. When the pitch / line width ratio is about 5.4 to 6.5, there may be two internal auxiliary patterns, and each of the internal auxiliary patterns is separated from the closest original pattern line by a distance.
在線段之間配置實質上窄於外緣輔助圖案的内輔助圖 案’可以提供足夠的製程空間,且不易引起邊垂( s i de lobes)問題或增加光罩錯誤因素(mask- error errors 5~4圖式簡單說明: * f 了讓本發明之上述和其他之目的、特徵、和優點能 更月顯易个γ 、 _ 下文特舉較佳實施例,並配合所附圖式,作 評細說明如下。 第 幕…圖繪示根據本發明例 (光罩)的一部份; r第Λ围:示根據本發明例 部份 幕( 一種圖案化的光學微影 —種圖案化的光學微影 —種圖案化的光學微影 第三围繪示根據本發 明例The configuration of the inner auxiliary pattern which is substantially narrower than the outer auxiliary pattern between the line segments can provide sufficient process space, and it is not easy to cause si de lobes problems or increase mask-error errors 5 ~ 4 Brief description of the drawings: * f makes the above and other objects, features, and advantages of the present invention more obvious. Γ, _ The following exemplifies preferred embodiments, and makes detailed comments in conjunction with the attached drawings. As follows: The first scene ... shows a part of an example (mask) according to the present invention; rth Λ: shows a partial scene according to the present invention (a patterned optical lithography—a patterned optical lithography A patterned optical lithography third enclosure drawing according to an example of the present invention
436665436665
五、發明說明(4) 罩幕(光罩)的一部份; 第四圖繪示根據本發明例四’一種圖案化的光學微影 罩幕(光罩)的一部份;以及 第五圖繪示根據本發明例五’一種圖案化的光學微影 罩幕(光罩)的一部份。 主要部分之標記說明: 100、200、300、400、500 光學微影罩幕(光罩)的 一部份 102、202、302、402、502 線段 104、204、304、404、504 外緣辅助圖案 206 、 306 、406 、 506 内輔助圖案 SI、S2、S3、S4 ' S5 間距 L 線寬 、d4 寬度 5-4較佳實施例 幾個特定的實施例V. Description of the invention (4) Part of the mask (mask); The fourth figure shows a part of a patterned optical lithography mask (mask) according to Example 4 of the present invention; and fifth The figure shows a part of a patterned optical lithographic mask (mask) according to Example 5 of the present invention. The main part of the label description: 100, 200, 300, 400, 500 part of the optical lithography mask (mask) 102, 202, 302, 402, 502 line segment 104, 204, 304, 404, 504 outer edge auxiliary Patterns 206, 306, 406, 506 Inner auxiliary patterns SI, S2, S3, S4 'S5 Pitch L Line width, d4 width 5-4 Preferred embodiments Several specific embodiments
在下文中中,吾人將根據本發明 描述幾個可據以實施的光罩。 例一 第一圖繪示一種圖案化的光學微影罩幕(光罩)的一部 份100。請參照第一圖,該部份100包括—組相互平行,且In the following, we will describe several photomasks that can be implemented according to the present invention. Example 1 The first figure shows a portion 100 of a patterned optical lithographic mask (reticle). Please refer to the first figure, the part 100 includes-the groups are parallel to each other, and
第7頁 436665 五、發明說明(5) 實質上等距間隔的線段1 〇2,每個線段丨〇2各代表一個具有 —線寬L之原始圖案線條的一部份。在相鄰線段丨〇2之間具 有實質上相等的間距Si,使得Si/L<3。在線段102之間的間 距實質上是完全透光的。 有兩個輔助圖案(assist feature s)104分別配置在最 左邊和最右邊的線段外緣。每個外緣的輔助圖案1 〇4均具 有一寬度D ’且各自和最接近的線段相隔有一定距離。 例二Page 7 436665 V. Description of the invention (5) Line segments 1 02, which are substantially equally spaced, each line segment 02 represents a portion of the original pattern line with a line width L. There is a substantially equal pitch Si between adjacent line segments 〇2, so that Si / L < 3. The spacing between the line segments 102 is substantially completely transparent. There are two auxiliary features (assist features s) 104 arranged on the outer edges of the leftmost and rightmost segments, respectively. Each auxiliary pattern 104 on the outer edge has a width D 'and is spaced apart from the nearest line segment by a certain distance. Example two
第二圖繪示另一種圖案化的光學微影罩幕(光罩)的一 部份2 0 0。這部份2 0 〇包括一組相互平行,且實質上等距間 隔的線段202,每個線段202各代表一個具有一線寬L之原 始圖案線條的一部份。有兩個辅助圖案204分別配置在最 左邊和最右邊的線段外緣。每個外緣的輔助圖案2〇4均具 有一寬度D ’且各自和最接近的線段相隔有一定距離。 這個例子的線段情況和例一大致類似,而其不同之處 在於相鄰線段202之間的間距S2 »其中S2>Si,且S2/L = 3-4 〇The second figure shows a part of another patterned optical lithographic mask (mask). This part 200 includes a set of line segments 202 that are parallel to each other and are substantially equally spaced. Each line segment 202 represents a portion of an original pattern line having a line width L. There are two auxiliary patterns 204 arranged on the outer edges of the leftmost and rightmost line segments, respectively. Each of the auxiliary patterns 204 on the outer edge has a width D 'and is separated from the nearest line segment by a certain distance. The line segment of this example is roughly similar to the first example, but the difference is that the distance S2 between adjacent line segments 202 »where S2 > Si, and S2 / L = 3-4 〇
在例二中,除了外緣的輔助圖案204之外,另有兩個 内輔助圖案206分別配置在線段之間。每個内辅助圖案206 的較佳寬度d2實質上窄於每個外緣輔助圖案2〇4的寬度D。 因為在這種S2/L = 3-4的情況時,若於線段202之間加入寬 度為D的内輔助圖案,易導致有邊垂(sidelobes)問題,或 增加其他光罩錯誤因素(mask-errorfactors) °較佳的内In Example 2, in addition to the auxiliary pattern 204 on the outer edge, two other inner auxiliary patterns 206 are respectively arranged between the line segments. The preferred width d2 of each inner auxiliary pattern 206 is substantially narrower than the width D of each outer auxiliary pattern 204. Because in this case of S2 / L = 3-4, if an internal auxiliary pattern with a width of D is added between the line segments 202, it is likely to cause sidelobes problems, or add other mask error factors (mask- errorfactors) ° better
第8頁 436665 五、發明說明(6) 輔助圖案寬度(12約為〇.7-〇.81),其中尤以〇.751)為佳。 例三 請參照第三圖,其所繪示為一圖案化之光學微影罩幕 (光罩)的一部份300。在例三(第三圖)中,線段3〇2的情況 實質上和例二的情況是一樣的(但輔助圖案3 〇 4就有所不同 )’只不過其Sa/L值約為4-5, 4。每個配置在線段302之間 的輔助圖案3 0 4寬度實質上等於每個如例二和例一所述之 外緣輔助圖案的寬度^ 例四 第四圖繪示另一種圖案化的光學微影罩幕(光罩)的一 部份4 0 0。這部份4 0 0包括一組相互平行,且實質上等距間 隔的線段402,每個線段4〇2各代表一個具有一線寬l之原 始圖案線條的一部份。在相鄰線段402之間存在有實質上 相等之間距S4 ’其中&几=5. 4-6. 5。線段402之間的間距實 質上是完全透光的。 有兩個辅助圖案404分別配置在最左邊和最右邊的線 段外緣。每個外緣的輔助圖案4〇4均具有一寬度D ,且各自 和最接近的線段相隔有一定距離。 除了外緣的輔助圖案404之外,另有兩個内輔助圖案 406分別配置在線段4〇2之間。每個内輔助圖案4〇6的較佳 f度屯實質上窄於每個外緣輔助圖案4〇4的寬度D。因為在 這種1/1^5.4-6.5的情況時,若於線段4〇2之間加入兩個Page 8 436665 V. Description of the invention (6) Auxiliary pattern width (12 is about 0.7-0.81), especially 0.7751 is preferred. Example 3 Please refer to the third figure, which is shown as a part 300 of a patterned optical lithographic mask (reticle). In Example 3 (third picture), the situation of the line segment 302 is substantially the same as that of Example 2 (but the auxiliary pattern 304 is different) 'except that its Sa / L value is about 4- 5, 4. The width of each auxiliary pattern 3 0 4 arranged between the line segments 302 is substantially equal to the width of each outer edge auxiliary pattern as described in Example 2 and Example ^ Example 4 The fourth figure shows another patterned optical micro Part of the shadow mask (mask) 4 0 0. This part 400 includes a set of line segments 402 that are parallel to each other and are substantially equally spaced. Each line segment 402 represents a portion of an original pattern line having a line width l. Between adjacent line segments 402, there is a substantially equal distance S4 ', where & several = 5. 4-6. The spacing between the line segments 402 is substantially completely transparent. There are two auxiliary patterns 404 arranged on the outer edges of the leftmost and rightmost segments, respectively. Each auxiliary pattern 400 on the outer edge has a width D, and each is separated from the nearest line segment by a certain distance. In addition to the auxiliary pattern 404 on the outer edge, two other inner auxiliary patterns 406 are respectively disposed between the line segments 402. The preferred f degree of each inner auxiliary pattern 406 is substantially narrower than the width D of each outer edge auxiliary pattern 404. Because in this case of 1/1 ^ 5.4-6.5, if you add two between the line segments 402
^36665 五、發明說明(7) 一 寬度為D的内辅助圖案’易導致有邊垂(side lobes )問題 ’或增加其他光罩錯誤因素。就另一方面而言,只在線段 402之間加入一個寬度為D的輔助圖案所得到的製程空間( process window)又嫌不足。因此,吾人在相鄰線段4〇2之 間配置兩個辅助圖案4〇6,其個別較佳寬度七約為〇. 7_〇. 8 D,其中又以0. 75D為佳。 例五^ 36665 V. Description of the invention (7)-An internal auxiliary pattern with a width of D is apt to cause side lobes problems or other error factors of the photomask. On the other hand, the process window obtained by adding an auxiliary pattern with a width D between the line segments 402 is not enough. Therefore, I arrange two auxiliary patterns 406 between the adjacent line segments 402, and the individual preferred widths of seven are about 0.7_0.8 D, among which 0.775D is better. Example five
請參照第5圖’其所繪示為一圖案化光學微影罩幕(光 ,)5 0 0在例五中,線段5 0 2的情況實質上和例四的情況 疋一樣的(但辅助圖案5〇4就有所不同),只不過其&/[〉6, 5每個配置在線段5〇2之間的輔助圖案5〇4寬度d實質上等 於每個如例一至例四所述之外緣輔助圖案的寬度。 本發明先前所述的例子具有許多優點。舉例來說,在 間距/線寬比約等於3-4或5· 4_6· 5的時候,在線段之間配 置實質上窄於外緣輔助圖案的内辅助圖案,可以提供足夠 的製程空間,且不易引起邊垂問題或增加光罩錯誤因素。Please refer to FIG. 5 'which shows a patterned optical lithography mask (light,) 5 0 0 In Example 5, the situation of line segment 502 is substantially the same as that of Example 4 (but auxiliary The pattern 504 is different), but its & / [> 6, 5 each auxiliary pattern 504 width d arranged between the line segments 502 is substantially equal to each of the examples 1 to 4 The width of the peripheral edge auxiliary pattern is described. The previously described examples of the present invention have many advantages. For example, when the pitch / line width ratio is approximately equal to 3-4 or 5 · 4_6 · 5, the inner auxiliary pattern that is substantially narrower than the outer auxiliary pattern can be provided between the line segments, which can provide sufficient process space, and It is not easy to cause problems with sags or increase mask error factors.
雖然本發明已以較佳實施例揭露如上,然其並非用以 限^本發明,任何熟習此技藝者,在未脫離本發明之精神 和範圍内’當可作等效改變或修飾。因此本發明之保護範 圍’當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make equivalent changes or modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention is determined by the scope of the attached patent application.
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TW88122187A TW436665B (en) | 1999-12-17 | 1999-12-17 | Photomask with lines of auxiliary feature and original feature |
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US8052791B2 (en) | 2003-04-22 | 2011-11-08 | Sharp Kabushiki Kaisha | Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus |
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US8052791B2 (en) | 2003-04-22 | 2011-11-08 | Sharp Kabushiki Kaisha | Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus |
US8435346B2 (en) | 2003-04-22 | 2013-05-07 | Dai Nippon Printing Co., Ltd. | Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus |
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