TW432403B - Chip-type high-precision low-resistance device and its fabricating method - Google Patents

Abstract

This invention is about chip-type high-precision low-resistance device and its fabricating method. After the roll of alloy metal wire material with extremely low temperature coefficient of resistance is rolled to form thin plate shape or the roll of alloy metal plate material with extremely low temperature coefficient of resistance is directly used, the pressing process is used to form the outlook of device. Then, the insulating coating is fabricated to cover the electrode so as to form the device.

Description

-3_ V. Description of the Invention (1) "Scope of Invention" The present invention relates to a wafer-type high-precision low-resistance element and a manufacturing method thereof, particularly to a wafer-type high-precision low-resistance element having an extremely low temperature coefficient of resistance and Its production method. "Background of the Invention" In order to respond to the rapid development of the central processing unit (CPU) used in personal computers and various requirements of the central processing unit, such as faster computing speed, lower operating voltage, higher operating current, and Higher power quality; the power provided to the CPU has been separated from an individual module in the integration mode of sharing a power supply with other power sources *, and the operating frequency of this module to control power conversion is also increasing The higher, so for the sake of stability considerations, the control mode of power conversion has gradually changed from voltage control mode to current control mode. The above-mentioned change is not only on personal computers, but in fact, the power control needs of the entire electronics industry, the current control mode has gradually become mainstream. Since it is a current control mode, a current sensing element is indispensable, and a low resistance element is one of the most widely used current sensing elements. In order to control the accuracy, the resistance error of the low-resistance current sensing element used must be as small as possible, that is, the higher the accuracy, and high heat will be generated when a large current flows through the low-resistance current sensing element. Therefore, the low-resistance component must consider the power dissipation problem, and the temperature coefficient of the low-resistance component must be as low as possible to reduce the resistance deviation caused by temperature rise and maintain the sensing accuracy. Based on the above objectives and requirements, the inventor has invented the wafer-type high-precision of the present invention by a mechanical stamping process and a related electrical adjustment process.

Page 4 _! P4 32 4 Ο 3 V. Explanation of the invention (2), low-resistance components and consistent manufacturing methods-Temperature coefficient of resistance, good heat dissipation function-^, in order to meet high-precision, low-power production. And seeking 'at the same time can be used at low cost < Explanation of the know-how > Muyue_ί has been widely used in various. There are several types of measuring elements: Electricity 'origin. . Low-resistance current sense 1. As shown in Figure 1A, Figure 1B, and the steel foil 1 0 1 on the lc for special wiring, you will get & 丨 You don't directly connect the machine board 1 00 is very low cost; but the resistance The value error is large \ lowest resistance. The characteristics of the element β is almost the resistance temperature of copper 俜 &, the serious thing is that its resistance temperature is 2. For example, the first chapter: up to several thousand ... The bonding method used is alloy metal, using a gold metal wire connection, the advantage is that the cost is moderate, and the resistance is inserted in the board to chat and fresh π Scan "ΐίΐ 俨 # 俨 ラ 拉 The pull factor can be reduced to 50ppM / ° C to L ΐ: It is not easy to control the condition.-Generally, the resistance value is adjusted by a variable resistor. Wieg's% 纟, the control circuit needs another 3. As shown in the third and third figures, the crystal moon type using a thin film process 7L low-resistance current sensing, which is connected to the machine board 300, and is sequentially covered with the conductor layer 300i, 3002, 3 0 3 '3 0 4 and has the advantage that its resistance error is caused by Laser trimming can be controlled to within 1%. The trimmed resistive film protective layer uses high thermal conductivity material, so the wafer size is small; The problem is that the temperature coefficient of resistance can only reach about 250ppM / ° C, and the price and cost are high. 4.As shown in Figure 4A, Figure 4B, and Figure 4C, wafer-type low-resistance current sensing using a thick film process Element 'which is also covered in turn on the board 4 0 0

τ »4 324 0 3 V. Description of the invention (3) Resistive material 401, protective layer 402, and conductive layer 403. The resistance value can be controlled by laser trimming below 1%: the temperature coefficient of resistance can be It is below 1 OOppM / ° C; however, the material of the protective layer has poor thermal conductivity, so the size of the wafer is large, and the use cost is extremely high. "Object of the Invention" In view of the above-mentioned shortcomings of the conventional low-resistance current sensing technology, the present invention aims to provide a wafer-type high-precision low-resistance component with high accuracy, low resistance temperature coefficient and good heat dissipation structure, and a manufacturing method thereof. It is a low-resistance current sensing element with low use cost. In this way, it can use low-cost mass production and use the element in facilities with higher performance requirements to improve the accuracy of the device. As for the detailed production process of the present invention, and other purposes and effects, you can get a complete understanding with reference to the following description made with reference to the drawings. Schematic diagram of low-resistance components for wiring. Figure 1'4 is a plan view, Figure 1B is a cross-sectional view, and Figure 1C is a longitudinal sectional view. Figure 2 is a schematic diagram of low-resistance components and their use methods of conventional alloy metal wires. Among them, FIG. 2A is a plan view, FIG. 2B is a cross-sectional view, and FIG. 2C is a longitudinal sectional view. FIG. 3 is a schematic diagram of a conventional thin film wafer type low-resistance element, in which FIG. 3A is a plan view and FIG. 3B is a plan view. A cross-sectional view, FIG. 3C is a vertical cross-sectional view; FIG. 4 is a schematic diagram of a conventional thick-film wafer type low-resistance device, where

r rd32 ^ 3-:-5. Description of the invention (4) Figure 4A is a plan view, Figure 4B is a cross-sectional view, Figure 4C is a longitudinal load view, and Figure 5 is a thin-film wafer type low-resistance element TCR Calculated size illustration Figure 6 is a wafer-type high-precision low-resistance element diagram of the present invention, where Figure 6A is a plan view, Figure 6B is a cross-sectional view, and Figure 6C is a longitudinal-cut view. Figures 7 A to 7J This is the process drawing of the production method of the present invention; "Comparison of component names and symbols in the illustration" Substrate 101 120 140 Copper foil protective layer resistance trimming area 2: resistance layer 2 0 1: alloy metal wire 3: conductor layer 301, 302, 303, 4: Protective layer 1 00: Machine board 1 1 1, 1 1 2: Insulation cover 131 '132: Electrode structure 1 50: Insulation coating 2 0 0: Machine board 3 0 0: Machine board 304: Conductor layer 400 : Machine board 401 Resistive material 402 Protective layer 403 Conductor layer 5: Protective layer 6: Interface layer 7: Low TCR alloy metal material 9 0: Heat sink [Detailed description of the preferred embodiment

’Rd32 厶 Ο 3_ V. Description of the invention (5) The conventional technologies of Figures 1 to 4 have been described in detail. The details of the new structure of the high precision low-resistance element of the wafer type of the present invention are described as follows: 1. Whether it is a thick film or a thin film resistive film, the temperature coefficient of the film (TCR) resistance is extremely low, even as low as 5 OppM / ° C or less; so the temperature coefficient of resistance of the chip-type low-resistance element is almost completely affected by the temperature coefficient of resistance of the structure conductor of the chip itself. Take the conventional thin-film wafer low-resistance element as an example (see Figure 5): The electrode width is 7. 5mm and 7500 # m, and the estimated length of the unilateral electrode conductor is 800 / zm. The resistivity of copper is 1.72 " Ω.cm. As a reference, the conductor thickness is T and the conductor resistance is m.

Rc = ρ β / Α = [(1 · 72 " Ω · 104 # m. 800 // m) / (7500 ^ m · Τμπι) 3χ2-0.003669Ω / T = 3.669 m Ω / T if T = 17 / zm , Then Rc (17) = 0.216mQ (17 / zm is equivalent to 0.5 oz copper foil) If T = 35 # m, then Rc (35) = 0.105inn (35ym is equivalent to 1.0 oz copper foil) If T = 70 # in, then Rc (70) = 0.052πιΩ (7〇em is equivalent to a 2.0 oz copper box) and then Rc (17) = 0.216πΩΩ TCR Rc = 3 0 0 0 ppM / ° C and Rc (1 7) = 4. 784πιΩ

TCR.RL = 50 ppM / ° C Calculate the overall TCR 4. 7 84m Ω X 50 ppM / t: x 100〇C = 0.02392ιηΩ

Μάδ η 3_____ 5. Description of the invention (6) ''

〇216mQ x 3000ppM / ° C x 100 ° C — 〇〇〇648mQ The resistance change due to TCR is 0.202392 + 0.0648 = 〇8872ιηΩ After synthesis, the overall TCR is 0.008872ιπΩ / (5ιηΩχΐ〇 ( Γ (:) = l77ppM / 〇C As shown in the second paragraph, the alloy metal wire in the conventional technique example 2 has extremely low resistance temperature coefficient characteristics. Therefore, the present invention adopts an alloy metal with extremely low TCR It is a method of chip component body, which reduces the resistance of the conductor to the lowest, and thus achieves the characteristics of low resistance temperature coefficient. 2. Based on the above principles, the present invention uses a mechanical stamping process to make the component body, and after proper combination of the manufacturing process With the resistance trimming process combined with appropriate measurement, a high-precision low-resistance component is produced. 3. Complete description: The process of the present invention will be described one by one with reference to FIGS. 6 and 7. 3.1 The wafer type of the present invention The low-resistance current sensing element body 7 uses an alloy metal with extremely low TCR, which itself has good heat dissipation ability and becomes the main component of the electrical resistance value of the element. 3.2 If a round wire is used (as shown in Figure 7 A1) , Then first roll In the pressing process, the material is formed into a square body (such as Fig. 7A2) required for the component. If a square plate (such as Fig. 7B) is used, it can be directly used as the component body. The required wide size, and the structural requirements required for subsequent processes (such as Figures 7 c 1 and 7C2). 3. 4 Insulation covering the electrode area 11 1; [丨 2, for example, The tape is used as the front and back sides of the component electrode area. (Figures 7D1 圊 and 7D2)

^ 4 324 0 3 V. Explanation of the invention (7)). 3.5 The four sides of the component body resistance forming area are covered with insulation to form a protective layer 120 for subsequent electrode plating processes. (As shown in Figures 7E1 and 7E2). 3.6 Remove the insulation from the electrode area. For example, if the tape is attached, peel off the tape. (As shown in Figure 7F 1 and Figure 7F 2). 3.7 Electroplating the electrodes to produce electrode structures 1 3 1, 1 2 2 to establish the soldering interface of the component during use, while reducing the overall resistance of the electrode area. (As shown in Figure 7G1 and Figure 7G2). 3.8 By testing and trimming the component resistance and resistance value, the component resistance value accuracy is adjusted to the required error value. At this time, the component surface has a resistance value modification area 140. (As shown in Figure 7H1 and Figure 7H2). 3.9 The resistance trimming area is coated with insulation, and the exposed area of the trimmed component body is covered with insulation again. (As shown in Figures 7 11 and 7 I 2). 3. 10 The component press forming process punches the strip-shaped connected components that complete the above process into a single wafer-shaped component. (As shown in Figures 7 J 1 and 7 J 2). 4. With the above components and manufacturing methods, the manufacturing process can be completely connected and consistent, unmanned production, high precision, low TCR, and good heat dissipation structure. "Implementation of the present invention" The wafer-type high-precision low-resistance element of the present invention and the manufacturing method thereof can make the following changes and applications: 1. Change the physical characteristics such as the volume resistivity of alloy metal raw materials,

Page 10 Ρζί / 1 η 3 _: _ 5. Description of the invention (8) The components with the same length and width can have different power specifications. 2. Varying the use of alloy metal materials and process parameters and fixtures can produce components with various appearance sizes and resistance values. "Effects of the Invention" The wafer-type low-resistance element manufactured according to the manufacturing method of the present invention has the following functions and effects: 1. Compared with the conventional products manufactured by the prior art, the production process can be performed without batch production. Fully coherent and unmanned production can effectively reduce production costs. 2. The alloy body with extremely low TCR is used as the component body. The component TCR is the alloy metal TCR, which is superior to existing wafer-type components. 3. The alloy metal has excellent heat dissipation ability. 4. The resistance value should have high accuracy. Due to the improved characteristics and efficacy of the present invention, it is a revolutionary improvement of high-precision low-resistance components. It does have practicality and novelty. It is an invention patent that complies with the patent law. . For those who need to know, the above is a preferred embodiment of the present invention. For those familiar with this technology, any changes made to the present invention should be in the present invention without departing from the spirit of the present invention. Within the scope of the patent application, I would like to present it first.

Claims (1)

P4 324 Q 3_ VI. Scope of Patent Application 1. — A method for manufacturing wafer-type high-precision low-resistance components, including the following steps: Using alloy metal with extremely low temperature coefficient of resistance (TCR) as the substrate; using stamping with precise dimensions A mold is used to punch a substrate of the required size for the component; the electrode area is covered with insulation; the four sides of the component resistance forming area of the component are covered with insulation; the electrode area is insulated and removed; the electrode is plated to make the electrode structure, and the component is used. The soldering interface at the same time, while reducing the overall resistance of the electrode area; by testing and trimming the component resistance and resistance value, the component resistance value accuracy is adjusted to the required error value; the resistance trimming area is insulated and coated to trim The exposed area of the component body is then covered with insulation again: The component press forming process punches the strip-shaped connected components that have completed the above process into a single wafer-shaped component 4 2. The wafer-type high-precision low-resistance component such as the first item in the scope of patent application In the manufacturing method, the base material is obtained by rolling a circular metal wire. 3. For the manufacturing method of the wafer-type high-precision low-resistance element according to the first patent application scope, wherein the base material is a square metal plate. 4. For the manufacturing method of the wafer-type high-precision low-resistance element according to the item 1 of the patent application scope, in which the insulating covering of the electrode area is made of tape on both sides of the element electrode area. 5. As for the chip type high precision and low resistance component in the scope of patent application No. 4 Page 12 Page 13