TW430996B - Structure and manufacturing method of a thin-film transistor with multiple gate structure - Google Patents
Structure and manufacturing method of a thin-film transistor with multiple gate structureInfo
- Publication number
- TW430996B TW430996B TW88117268A TW88117268A TW430996B TW 430996 B TW430996 B TW 430996B TW 88117268 A TW88117268 A TW 88117268A TW 88117268 A TW88117268 A TW 88117268A TW 430996 B TW430996 B TW 430996B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- gate electrode
- organic polymer
- metal gate
- polymer material
- Prior art date
Links
Abstract
The present invention reveals the manufacturing method of a thin-film transistor with larger thickness and multiple gate structure, wherein the metal gate electrode is planarized by using spin coating of organic polymer material layer, and the metal gate electrode is deposited with the thin film formed of the second metal material, in which the more appropriate material to cover the metal is Molybdenum (Mo). The present invention further reveals a planarization process for detecting the end point by applying dry etching and using the ultraviolet spectrum of Molybdenum, so that all of the organic polymer material can be removed from the plain surface of the metal gate(and the metal coverage layer), and terminate the dry etching process after that. Then deposit dielectrics such as Silicon Nitride on the surface of the metal gate and the remaining organic polymer material layer to finish the isolation process of gate electrode. The metal coverage layer is added to the surface of gate electrode in the method of the present invention, so the end point is easier to be recognized in the planarization process, wherein the organic polymer material layer can provide a substrate, and the dielectric material can be deposited on it to isolate the metal gate. The problems of the well-known technology such as step-coverage capability and hole generation in isolating the thick metal gate electrode can be resolved by the method revealed in the present invention.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW88117268A TW430996B (en) | 1999-10-05 | 1999-10-05 | Structure and manufacturing method of a thin-film transistor with multiple gate structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW88117268A TW430996B (en) | 1999-10-05 | 1999-10-05 | Structure and manufacturing method of a thin-film transistor with multiple gate structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW430996B true TW430996B (en) | 2001-04-21 |
Family
ID=21642525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW88117268A TW430996B (en) | 1999-10-05 | 1999-10-05 | Structure and manufacturing method of a thin-film transistor with multiple gate structure |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW430996B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110402387A (en) * | 2017-04-04 | 2019-11-01 | 株式会社半导体能源研究所 | The analysis method of organic semiconductor device |
| US11532717B2 (en) | 2017-11-22 | 2022-12-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Forming metal contacts on metal gates |
-
1999
- 1999-10-05 TW TW88117268A patent/TW430996B/en not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110402387A (en) * | 2017-04-04 | 2019-11-01 | 株式会社半导体能源研究所 | The analysis method of organic semiconductor device |
| CN110402387B (en) * | 2017-04-04 | 2022-07-15 | 株式会社半导体能源研究所 | Method for analyzing organic semiconductor element |
| US11532717B2 (en) | 2017-11-22 | 2022-12-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Forming metal contacts on metal gates |
| TWI816694B (en) * | 2017-11-22 | 2023-10-01 | 台灣積體電路製造股份有限公司 | Method for forming semiconductor structure |
| US11901426B2 (en) | 2017-11-22 | 2024-02-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Forming metal contacts on metal gates |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |