TW430994B - FET with source-substrate terminal and its production method - Google Patents
FET with source-substrate terminal and its production methodInfo
- Publication number
- TW430994B TW430994B TW087121524A TW87121524A TW430994B TW 430994 B TW430994 B TW 430994B TW 087121524 A TW087121524 A TW 087121524A TW 87121524 A TW87121524 A TW 87121524A TW 430994 B TW430994 B TW 430994B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- source
- fet
- layer
- substrate terminal
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/781—Inverted VDMOS transistors, i.e. Source-Down VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
Abstract
This invention relates to a FET with source-substrate terminal and trench-gate (8) (Source-Down-FET), in which a drain-area (5) of the 1st conductive type is provided on a surface of a semiconductor-layer (3) of the 1st conductive type, said semiconductor-layer (3) is arranged on a semiconductor-substrate (1) of the 1st conductive type. Said trench-gate (8) basically goes through said semiconductor-layer (3), where a source-area (11) of the 1st conductive type is provided on the end of a trench (8) on the other surface of said semiconductor-layer (3) and semiconductor-areas (6, 7) of the 2nd conductive type are located in the region near said trench (8) on the other surface of said semiconductor-layer (3), the surface of said semiconductor-areas (6, 7) together with the surfaces of said source-area (11) form the other surface of said semiconductor-layer (3).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19801313A DE19801313C2 (en) | 1998-01-15 | 1998-01-15 | FET with source-substrate connection |
Publications (1)
Publication Number | Publication Date |
---|---|
TW430994B true TW430994B (en) | 2001-04-21 |
Family
ID=7854702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087121524A TW430994B (en) | 1998-01-15 | 1998-12-23 | FET with source-substrate terminal and its production method |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0966764A1 (en) |
JP (1) | JP2001515663A (en) |
KR (1) | KR100443976B1 (en) |
DE (1) | DE19801313C2 (en) |
TW (1) | TW430994B (en) |
WO (1) | WO1999036964A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4774586B2 (en) * | 1999-10-21 | 2011-09-14 | 富士電機株式会社 | Manufacturing method of semiconductor device |
DE10004984A1 (en) | 2000-02-04 | 2001-08-16 | Infineon Technologies Ag | Vertical semiconductor device with source-down design and corresponding manufacturing process |
DE10042226B4 (en) * | 2000-08-28 | 2014-12-24 | Infineon Technologies Ag | Source-down power MOSFET and method of making the same |
US6455905B1 (en) * | 2001-04-05 | 2002-09-24 | Ericsson Inc. | Single chip push-pull power transistor device |
DE10239310B4 (en) * | 2002-08-27 | 2005-11-03 | Infineon Technologies Ag | Method for producing an electrically conductive connection between a first and a second buried semiconductor layer |
JP2005150686A (en) * | 2003-10-22 | 2005-06-09 | Sharp Corp | Semiconductor device and its manufacturing method |
US7947569B2 (en) | 2008-06-30 | 2011-05-24 | Infineon Technologies Austria Ag | Method for producing a semiconductor including a foreign material layer |
US7943449B2 (en) | 2008-09-30 | 2011-05-17 | Infineon Technologies Austria Ag | Semiconductor component structure with vertical dielectric layers |
US8519473B2 (en) * | 2010-07-14 | 2013-08-27 | Infineon Technologies Ag | Vertical transistor component |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62159468A (en) * | 1986-01-08 | 1987-07-15 | Tdk Corp | Semiconductor device |
US5023196A (en) * | 1990-01-29 | 1991-06-11 | Motorola Inc. | Method for forming a MOSFET with substrate source contact |
JP3291958B2 (en) * | 1995-02-21 | 2002-06-17 | 富士電機株式会社 | Back source MOSFET |
DE19638439C2 (en) * | 1996-09-19 | 2000-06-15 | Siemens Ag | Vertical semiconductor device controllable by field effect and manufacturing process |
-
1998
- 1998-01-15 DE DE19801313A patent/DE19801313C2/en not_active Expired - Fee Related
- 1998-12-15 JP JP53662499A patent/JP2001515663A/en not_active Ceased
- 1998-12-15 KR KR10-1999-7008381A patent/KR100443976B1/en not_active IP Right Cessation
- 1998-12-15 EP EP98966210A patent/EP0966764A1/en not_active Withdrawn
- 1998-12-15 WO PCT/DE1998/003683 patent/WO1999036964A1/en not_active Application Discontinuation
- 1998-12-23 TW TW087121524A patent/TW430994B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE19801313C2 (en) | 2001-01-18 |
WO1999036964A1 (en) | 1999-07-22 |
KR20000076284A (en) | 2000-12-26 |
KR100443976B1 (en) | 2004-08-09 |
JP2001515663A (en) | 2001-09-18 |
DE19801313A1 (en) | 1999-07-22 |
EP0966764A1 (en) | 1999-12-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |