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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW87111203ApriorityCriticalpatent/TW430945B/en
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Publication of TW430945BpublicationCriticalpatent/TW430945B/en
The present invention discloses a planarization method using chemical mechanical polishing technique. During the metal polishing process, the metal chemical mechanical polishing slurry is used to remove most of the metal, and then the dielectric chemical mechanical polishing slurry with approximate physical properties is applied for mixing with the chemical mechanical polishing slurry in order to increase and control the removing rate of the dielectric and remove the metal residuals on the surface of the dielectric for achieving the planarization of the dielectric.