TW429467B - Method for processing the etching selectivity for different etching stop layers - Google Patents

Method for processing the etching selectivity for different etching stop layers

Info

Publication number
TW429467B
TW429467B TW88110253A TW88110253A TW429467B TW 429467 B TW429467 B TW 429467B TW 88110253 A TW88110253 A TW 88110253A TW 88110253 A TW88110253 A TW 88110253A TW 429467 B TW429467 B TW 429467B
Authority
TW
Taiwan
Prior art keywords
etching
mixed gas
layer
applying
conductive layer
Prior art date
Application number
TW88110253A
Other languages
Chinese (zh)
Inventor
Huei Ouyang
You-Neng Jeng
Jr-Ping Yang
Huei-Ying Tsai
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to TW88110253A priority Critical patent/TW429467B/en
Application granted granted Critical
Publication of TW429467B publication Critical patent/TW429467B/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The present invention relates to a method for etching oxide layer to form a plurality of contact holes for being in touch with the polysilicon layer of a capacitor, the conductive layer of a gate electrode and the silicide layer of a source/drain region, respectively. The method comprises: first, placing the semiconductor substrate into an etching reaction chamber; next, applying a first mixed gas for generating plasma to etch unmasked oxide layer, when the etching process reaches the polysilicon layer; applying a second mixed gas for etching and stopping the process when the etching process reaches a position about 0.2-0.3 mu m above the conductive layer of the gate electrode; then, applying a mixed gas for sub-etching to clean the etching product generated by the second mixed gas with a lower etching reaction chamber pressure; and finally, applying a third mixed gas for etching through the silicon nitride covering layer and preventing the conductive layer from over etching.
TW88110253A 1999-06-17 1999-06-17 Method for processing the etching selectivity for different etching stop layers TW429467B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88110253A TW429467B (en) 1999-06-17 1999-06-17 Method for processing the etching selectivity for different etching stop layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88110253A TW429467B (en) 1999-06-17 1999-06-17 Method for processing the etching selectivity for different etching stop layers

Publications (1)

Publication Number Publication Date
TW429467B true TW429467B (en) 2001-04-11

Family

ID=21641179

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88110253A TW429467B (en) 1999-06-17 1999-06-17 Method for processing the etching selectivity for different etching stop layers

Country Status (1)

Country Link
TW (1) TW429467B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG129260A1 (en) * 2002-10-07 2007-02-26 Taiwan Semiconductor Mfg Method of forming contact plug on silicide structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG129260A1 (en) * 2002-10-07 2007-02-26 Taiwan Semiconductor Mfg Method of forming contact plug on silicide structure

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Legal Events

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees