TW429467B - Method for processing the etching selectivity for different etching stop layers - Google Patents
Method for processing the etching selectivity for different etching stop layersInfo
- Publication number
- TW429467B TW429467B TW88110253A TW88110253A TW429467B TW 429467 B TW429467 B TW 429467B TW 88110253 A TW88110253 A TW 88110253A TW 88110253 A TW88110253 A TW 88110253A TW 429467 B TW429467 B TW 429467B
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- mixed gas
- layer
- applying
- conductive layer
- Prior art date
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention relates to a method for etching oxide layer to form a plurality of contact holes for being in touch with the polysilicon layer of a capacitor, the conductive layer of a gate electrode and the silicide layer of a source/drain region, respectively. The method comprises: first, placing the semiconductor substrate into an etching reaction chamber; next, applying a first mixed gas for generating plasma to etch unmasked oxide layer, when the etching process reaches the polysilicon layer; applying a second mixed gas for etching and stopping the process when the etching process reaches a position about 0.2-0.3 mu m above the conductive layer of the gate electrode; then, applying a mixed gas for sub-etching to clean the etching product generated by the second mixed gas with a lower etching reaction chamber pressure; and finally, applying a third mixed gas for etching through the silicon nitride covering layer and preventing the conductive layer from over etching.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88110253A TW429467B (en) | 1999-06-17 | 1999-06-17 | Method for processing the etching selectivity for different etching stop layers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88110253A TW429467B (en) | 1999-06-17 | 1999-06-17 | Method for processing the etching selectivity for different etching stop layers |
Publications (1)
Publication Number | Publication Date |
---|---|
TW429467B true TW429467B (en) | 2001-04-11 |
Family
ID=21641179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW88110253A TW429467B (en) | 1999-06-17 | 1999-06-17 | Method for processing the etching selectivity for different etching stop layers |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW429467B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG129260A1 (en) * | 2002-10-07 | 2007-02-26 | Taiwan Semiconductor Mfg | Method of forming contact plug on silicide structure |
-
1999
- 1999-06-17 TW TW88110253A patent/TW429467B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG129260A1 (en) * | 2002-10-07 | 2007-02-26 | Taiwan Semiconductor Mfg | Method of forming contact plug on silicide structure |
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Legal Events
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GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |