TW426558B - Method of cleaning wafer after chemical mechanical polishing - Google Patents
Method of cleaning wafer after chemical mechanical polishing Download PDFInfo
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- TW426558B TW426558B TW88120653A TW88120653A TW426558B TW 426558 B TW426558 B TW 426558B TW 88120653 A TW88120653 A TW 88120653A TW 88120653 A TW88120653 A TW 88120653A TW 426558 B TW426558 B TW 426558B
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426558 五、發明說明(1) 5 -1發明領域 本發明係有關於一種半導體製程之化學機械研磨製程 ’特別有關於在化學機械研磨之後的晶片清洗程序。 5-2發明背景: 化學機械研磨法(chemical-mechanical polishing, CMP)是現在唯一能提供VLSI,甚至ULSI製程全面性平坦化, (global planar iz at ion)的技術。它就是利用類似11磨刀 "這種機械式研磨原理,再配合適當的化學助劑(reagent )’來把晶片表面高低起伏不一的輪廟,一併加以”磨平" 的平坦化技術。一旦各種製程的參數控制得宜,CMP可以 提供被研磨表面高達9 4%以上的平坦度。 在CMP的製程上,我們通常以"研漿(siurry )"來稱呼 所使用的化學助劑。其主要是由呈膠體狀(co 11 〇 i da 1 )的 矽土(silica),或呈分散狀(dispersed)的鋁土( alumina),和鹼性的K0H或ΝΗ40Η等溶液所混合而成的。這 些硬度及高的研磨顆粒,在研漿内的大小分佈(size distribution),約在0.1左右之間。基本上就是利用研聚 内的這些研磨性(a b r a s i v e )極高的微粒,來進行晶片的 表面研磨的。當然,不同材料的CMP所使用的研漿成分將426558 V. Description of the invention (1) 5 -1 Field of the invention The present invention relates to a chemical mechanical polishing process for a semiconductor process ′ and more particularly to a wafer cleaning process after chemical mechanical polishing. 5-2 Background of the Invention: Chemical-mechanical polishing (CMP) is the only technology that can provide VLSI and even ULSI process global planarization at present. It uses the principle of mechanical grinding similar to "11 sharpening knife", and cooperates with appropriate chemical agents (reagent) to smooth the wafer surface of the wafer. Technology. Once the parameters of various processes are properly controlled, CMP can provide a flatness of more than 94% of the surface being polished. In the CMP process, we usually refer to the "siurry" as the chemical aid used It is mainly composed of colloidal silica (co 11 〇i da 1) or dispersed alumina (aluminum) and alkaline KOH or ΝH40Η and other solutions. The size distribution of these abrasive and high abrasive particles in the slurry is about 0.1. Basically, these extremely abrasive particles in the abrasive polymer are used to The surface of the wafer is polished. Of course, the composition of the slurry used in the CMP of different materials will be
426558 五、發明說明(2) 有所不同。例如’在金屬鎢的CMP回蝕當中,研聚的組成 將包括一些氧化劑(oxidant)及有機溶劑(〇rganic agents )等,用以幫助CMP製程的進行。~般而言,在CMp所進行 的化學移除(chemical removal )過裎當中,將涉及到極 複雜的化學反應機構’及各種動力學(kinetics)上的問 題。 在機械性的移除過程中,晶片上的被研除材料,是藉 著研磨台上的研磨墊(polishing pad)與研漿裏的研磨微 粒所形成的結構’來加以研磨而去除的。以晶片上的S i 〇2 介電層的CMP為例,所使用的研磨墊材料,是一種填充有 聚氨酯的聚酯材料(polyurethana filled polyester), 本身具備一定的延展性(elasticity),以便對不同幾何426558 V. Description of Invention (2) is different. For example, in the CMP etchback of metallic tungsten, the composition of the research polymerization will include some oxidants and organic agents to help the CMP process. In general, the chemical removal process performed by CMP will involve extremely complicated chemical reaction mechanisms and various kinetic problems. During the mechanical removal process, the material to be removed on the wafer is removed by grinding through the structure formed by the polishing pad on the polishing table and the abrasive particles in the slurry. Taking the CMP of the Si 〇2 dielectric layer on the wafer as an example, the polishing pad material used is a polyurethane filled polyester material, which has a certain degree of elasticity in order to Different geometry
外觀(geometry)的晶片表面進行機械性的研磨。當CMP 的製程在進行時’抓著晶片的載體(c a r r 1 e r ),將對晶片 施加一定的壓力,以便使研磨墊與研漿所形成的結構,在 研磨台和載體所旋轉與移動的帶動下,對晶片上的薄膜進 行均勻性的研除動作,一般相信,當晶月的受麼壓力較低 ’且研磨台的旋轉速度較快時,CMP能提供較佳的平坦度 影響CMP平坦化技術的主要製程參數,除了以上所提 到的研聚成分、晶片施壓大小、及研磨的轉速以外,還有 研磨塾的材質、研漿内的研磨微粒的大小分佈(par t i c夏eThe surface of the wafer is mechanically polished. When the CMP process is in progress, the carrier (carr 1 er) holding the wafer will apply a certain pressure to the wafer, so that the structure formed by the polishing pad and the slurry is driven by the rotation and movement of the polishing table and the carrier. Next, the uniformity of the thin film on the wafer is removed. It is generally believed that when the pressure of the crystal moon is low and the rotation speed of the polishing table is fast, CMP can provide better flatness and affect CMP flattening. The main process parameters of the technology, in addition to the above-mentioned research composition, wafer pressure, and grinding speed, as well as the material of the grinding mill, the size distribution of the grinding particles in the grinding slurry (par tic Xia e
4 ^65 5 8 i but i on) 質的種類 響,但基 便有所不 以晶片的 但在鎢或 的結果產 依賴一層 ,來執行 進行晶片 除,如此 五、發明說明(3) size distr 及被研磨材 決定性的影 的操作參數 報告顯示, 影響較大; 學機械研磨 ’主要都是 ,如Si3N4等 CMP),須要 漿,徹底去 、研漿的供 等等。雖然 本上,不同 同。以S i 02 施壓,迴轉 石夕的CMP當 生顯著的差 稱為終止層 這項任務。 表面的清洗 才算完成完 料速度、溫度、pfj值控制 這些參數對CMP的製程有 的被研磨材料,其最主要 的CMP為例,據一些研究 速度、及研磨墊之種類的 中’ pH值的控制,將對化 異。通常CMP的製程終點 (stop layer)的沉積薄膜 至於CMP製程之後(post 工作,殘餘在晶片上的研 整的CMP製程。 傳統的化學機械研磨(CMP )製程中,將晶片研磨( polishing)完畢之後,可選擇兩種清洗流程。參見第一 A 圖’第一種為在化學機械研磨步驟11後,先刷洗(brush cleaning)l2,再進行超音波清洗(megasonic cleaning )1 3與去離子水水洗(d i —water r i nse )步驟1 4,以徹底 洗夺’然後再經旋乾(s p i n d r y i n g )程序1 5將此晶片完全 乾燥;第二種流程如第一 B圖所示,乃在化學學機械研磨 1 6後’先經超音波清洗1 7與去離子水水洗步驟1 8洗淨’再 經刷洗過程1 9後,然後進行旋乾程序21。 當選擇第一種流程時,其中之刷洗程序為整個洗淨過 程的後段步驟,但在高分子(如尼龍)製成的刷毛與晶片4 ^ 65 5 8 i but i on), but the basic type is not the same as the wafer, but the result of tungsten or depends on a layer to perform wafer division, so five, description of the invention (3) size distr The report of the operating parameters of the decisive effect of the material being polished shows that it has a greater impact; mechanical mechanical grinding is mainly used for CMP, such as Si3N4, etc., which requires slurry, thorough removal, supply of slurry, etc. Although the text is different. With Si 02 under pressure, the CMP of the revolving Shi Xi has a significant difference, which is called the termination layer. The cleaning of the surface is considered to be completed. Finishing speed, temperature, pfj value control these parameters. Some of the materials to be polished in the CMP process are the most important ones. For example, according to some research speeds and the types of polishing pads, the pH value The control will be different. Generally, the CMP process stop layer is deposited after the CMP process (post work, the remaining CMP process on the wafer. In the traditional chemical mechanical polishing (CMP) process, the wafer is polished) Two types of cleaning processes can be selected. See Figure A. 'The first is after the chemical mechanical polishing step 11, first brush cleaning l2, then megasonic cleaning 1 3 and deionized water. (Di —water ri nse) Steps 14 and 4 to completely wash away the wafer and then completely dry the wafer through a spindrying procedure 1 5; the second process is shown in the first B diagram, which is in chemical machinery After grinding for 16 years, 'first go through ultrasonic cleaning 17 and deionized water washing step 1 8 for washing' and then go through the brushing process 19 and then spin-drying process 21. When the first process is selected, the brushing process For the latter part of the entire cleaning process, but the bristles and wafers made of high polymer (such as nylon)
4 ? 6 5 5 8 五、發明說明(4) 的不斷磨擦之下,產生大量之靜電荷,這些電荷於是存留 在晶片之上,即使在隨後的旋乾步驟,亦無法將其移除’ 以至於當整個CMP製程完成時,此電荷仍留在晶片上且一 同進入後續製程’於是造成後製程的困擾,甚至破壞產品 的品質’所造成之影響不可不重視;就算實行上述之第二 種清洗流程’即刷洗程序置於前段步驟,而之後的去離子 水水洗步驟’所用之去離子水係為電中性(即不帶任何電 荷)’故也無法將晶片上的電荷帶走,則亦會得到與前述 之第一種流程相同的結果,造成半導體製程的障礙。 β,於上述之原因’隨著現今及未來半導體產品對品質 的提呵,必須發展新的CMp方法,以解決此產生靜電荷的 5 - 3發明目的及概述: 鑒於上述之發明背景令 統的清洗程序所產生的缺點 刷洗步驟所生成的靜電7 ’化學機械研磨後之晶片經傳 ’本發明的目的在消除其中之 根據以上所述之曰& 磨暨清洗的方法,t要係’本發明提供了一種化學機械研 離成的離子來將電荷從曰、:用二氧化碳溶於去離子水所解 攸日日片表面移除,所應用的清洗程序4? 6 5 5 8 V. The constant friction of the description of the invention (4) generates a large amount of electrostatic charges, which then remain on the wafer. Even in the subsequent spin-drying step, it cannot be removed. As for the completion of the entire CMP process, this charge still remains on the wafer and enters the subsequent process together, so it will cause troubles in the post-process and even damage the product quality. The impact caused by the quality cannot be ignored; even if the second cleaning described above is implemented The process' that is, the brushing procedure is placed in the previous step, and the subsequent deionized water washing step 'the deionized water used is electrically neutral (that is, it does not carry any charge)', so the charge on the wafer cannot be taken away. Will get the same results as the aforementioned first process, causing obstacles to the semiconductor process. β, for the reasons mentioned above. With the improvement of quality of current and future semiconductor products, it is necessary to develop a new CMP method to solve this 5-3 invention purpose and summary of generating electrostatic charges: In view of the above background of the invention, Disadvantages arising from the cleaning process The static electricity generated by the brushing step 7 'The wafer after chemical mechanical polishing is passed' The purpose of the present invention is to eliminate the above-mentioned & method of grinding and cleaning according to the present invention A chemical-mechanical dissociation ion is provided to remove the charge from the surface of the sun-dried tablets dissolved in carbon dioxide dissolved in deionized water, and the applied cleaning procedure
第8頁 426558 五、發明說明(5) 至少有兩種’分別於兩實施例中描述。在一實施例中,首 先將—晶片置於一研磨墊上,此晶片之研磨面與研磨墊接 觸’且於此接觸面加入研漿(s 1 ur ry );再將將晶片於研 磨塾上旋轉且移動,且藉研漿以研磨晶片之研磨面以平坦 化;用一旋轉刷輪刷洗晶片,以大致除去晶片上殘留的顆 粒;再以超音波清洗的方式處理晶片;加入一二氧化碳氣 體於一去離子水中,此二氧化碳氣體溶於去離子水中而成 3子:錢利用已加人該:氣化碳氣體的此去離子水, 晶片上殘留的顆粒_ ;最後將 »亥日曰片以一乾燥程序處理。在另一實施例中, 曰 片置於-研磨塾上,此晶片之研磨面與研磨塾接觸且: 此接觸面加入研毁(slurry) 觸,且於 2清;Π::::晶坦化;再" 加入-二氧化碳氣體於一去離子水中%::,:巧晶片; 於此去離子水中而成為離子;利用 J化,氣體溶 離子水,清洗晶片,以料麻 σ入一氧化碳的此去 ;最後,再將晶片以 烊二晶片上殘留的顆粒與電荷 9乃U ~乾輛程序處理0 5 - 4圖式間單說a月: 種清洗化學機械研磨後 第一 A圖係表示傳統所用的 之晶片的方法流程圖。Page 8 426558 V. Description of the invention (5) There are at least two types' described in the two embodiments. In one embodiment, the wafer is first placed on a polishing pad, the polishing surface of the wafer is in contact with the polishing pad, and a slurry (s 1 ur ry) is added to the contact surface; and then the wafer is rotated on the polishing pad. And move, and grind the polishing surface of the wafer by grinding to flatten the wafer; use a rotating brush wheel to scrub the wafer to roughly remove the remaining particles on the wafer; then treat the wafer by ultrasonic cleaning; add a carbon dioxide gas to a In deionized water, this carbon dioxide gas is dissolved in deionized water to form three sons: money utilization has been added to this: this deionized water that vaporizes carbon gas, residual particles on the wafer; Drying program processing. In another embodiment, the wafer is placed on the grinding pad, and the grinding surface of the wafer is in contact with the grinding pad and: This contact surface is added with a slurry contact, and is cleaned in 2; Π :::: 晶 坦Add " Add-carbon dioxide gas in a deionized water% ::,: clever chip; here deionized water becomes ions; use J chemical, gas to dissolve ionized water, clean the wafer, and feed the carbon monoxide into Finally, the wafer is treated with the remaining particles and charges 9 on the second wafer. The dry process is used to process the 5 to 4 drawings. The month is a month: the first A picture is shown after chemical mechanical polishing. Flow chart of traditionally used wafer method.
第9頁 426558 五、發明說明(6) 第一 B圖係表示傳統所用的另一種清洗化學機械研磨 後之晶片的方法流程圖。 第二A圖係表示本發明所提出的第—種清洗化學機械 研磨後之晶片的方法流程圖。 第二B圖係表示本發明所提出的第二種清洗化學機械 研磨後之晶片的方法流程圖。 主要部分之代表符號: 11-21 傳統清洗流程之各個步驟 2 2-33 本發明清洗流程之各個步驟 5 - 5發明詳細說明: 本發明適合應用在半導體平坦化製程之化學機械研磨 (chemical mechanical polishing, CMP)暨清洗步驟。 在一般的CMP研磨中’其所使用之裝置至少包括一晶片載 體(wafer carrier)、一研磨墊(p〇iishing pad)及研漿 (slurry)等。以晶片載體固定晶片,且將晶片之欲研磨面 朝向研磨墊且置於此研磨墊上(此欲研磨面接觸研磨墊), 且於此接觸面加入研漿(s 1 urry ),而後將晶片施與壓力 且於研磨墊上旋轉且移動’藉研漿研磨晶片之研磨面以平 坦化。此為一般CMP研磨的基本原理,當此研磨結束後, 晶片上必殘留許多研漿之研磨顆粒(p〇lishing particlesPage 9 426558 V. Description of the invention (6) The first diagram B is a flow chart showing another conventional method for cleaning wafers after chemical mechanical polishing. FIG. 2A is a flow chart showing a method for cleaning a wafer after chemical mechanical polishing according to the present invention. FIG. 2B is a flowchart showing a second method for cleaning a wafer after chemical mechanical polishing according to the present invention. Representative symbols of the main parts: 11-21 Each step of the traditional cleaning process 2 2-33 Each step of the cleaning process of the present invention 5-5 Detailed description of the invention: The present invention is suitable for chemical mechanical polishing of semiconductor planarization process , CMP) and cleaning steps. In general CMP polishing, the equipment used includes at least a wafer carrier, a polishing pad, a slurry, and the like. The wafer is fixed with a wafer carrier, and the polishing surface of the wafer faces the polishing pad and is placed on the polishing pad (the polishing surface contacts the polishing pad), and a slurry (s 1 urry) is added to the contact surface, and then the wafer is applied. Rotate and move the polishing surface of the wafer with the slurry and pressure on the polishing pad to planarize. This is the basic principle of general CMP polishing. After this polishing is completed, many polishing particles (polishing particles) will remain on the wafer.
第10頁 42655 8 五、發明說明(7) )及化學反應的生成物顆私势 切頌拉専。後續的流程則必須脾卟斿 留物予以去除,即為清泱Γ p彳.、 磺將此殘 月此(cleaning)。 A圖, 對晶片 殘留的 (nylon ,這些 音波的 ;接著 水洗步 一去離 離子水 電荷帶 它方法 將此'^ 旋乾法 在本發明之一實施例的清洗流程中,參見第二 當晶片經化學機械研磨步驟22後,首先以旋轉刷-進行刷洗(brush Cleaning)23,以大致除去晶片: 顆粒,此旋轉刷輪的材質通常為有機聚合物如尼 ),其與晶片不斷磨擦的結果必會產生許多靜電 電荷會留在晶片表面上;接著,再以超音波清洗( megasonic cleaning ) 24的方式處理晶片,利用起 震盪功能,使仍然附著於晶片上的顆粒脫離而除^ 利用水洗(rinse ) 25步驟處理(沖洗)此晶片,此 驟所用的水’係將二氧化碳(C〇2 )氣體以氣壓打入 子水(DI water )中且溶解、解離,使這原本之,,去 "尹帶有碳酸離子且pH值約為5至6左右,所以能將 離晶片’且徹底移除晶片上殘留的顆粒,亦可藉其 將二氧化碳溶於水中,並不限於打入氣體;最後,' 清各 的晶片以一乾無程序處理,此乾燥程序可用 (spi n dry i ng ) 26 完成。 參見第二B圖,在化學機械研磨27後,於本發8 實施例的清洗流程中,先以超音波清洗28作A ® 明另— '卜句弟~步驟· 其後可進行去離子水水洗(r i n s e ) 2 9,將晶片、、+ #、 ’ T洗*過,伯 此去離子水水洗步驟2 9亦可省略;再以旋轉刷於曰 一 于"9對晶片進Page 10 42655 8 V. Description of the invention (7)) and the chemical reaction of private particles Subsequent processes must be removed from the spleen and porcine retentate, that is, cleaning 泱 p 彳., Sulphur cleaning. Figure A, the residual of the wafer (nylon, these sonic waves; then the water washing step to remove the ionized water and charge it with this method) spin-drying method in the cleaning process of one embodiment of the present invention, see the second when the wafer After the chemical-mechanical polishing step 22, first, a rotary brush-brush cleaning 23 is performed to roughly remove the wafer: particles. The material of the rotary brush wheel is usually an organic polymer such as nylon, which results from constant friction with the wafer. Many electrostatic charges will be generated on the surface of the wafer; then, the wafer is processed by megasonic cleaning 24, and the vibration function is used to remove the particles still attached to the wafer and remove them using water washing ( rinse) 25 steps to process (rinse) this wafer. The water used in this step is carbon dioxide (CO 2) gas is blown into DI water under pressure and dissolved and dissociated. Yin has carbonate ions and the pH value is about 5 to 6, so it can be removed from the wafer and completely remove the remaining particles on the wafer. It can also be used to dissolve carbon dioxide in water. To enter the gas; Finally, 'clean each wafer to dry without processing program, this program is available dried (spi n dry i ng) 26 is completed. Referring to the second diagram B, after the chemical mechanical polishing 27, in the cleaning process of the embodiment of the present invention, the ultrasonic cleaning 28 is first used as A ® Ming another-'Bujudi ~ steps · deionized water can be performed thereafter Rinse (rinse) 2 9, wash the wafer, + +, 'T, then the deionized water washing step 2 9 can also be omitted; then use a rotating brush to add the wafer to the " 9.
第11頁 426558 五、發明說明(8) -- 行刷洗步驟30,如上一實施例中所述,此刷洗(訐口处 cleaning )步驟30會在晶月上留下靜電荷;接著,可 行超音波清洗31的步驟(亦可省略);接下來的清洗步 僅要可洗掉殘餘的顆粒,亦必須能夠將上述之電荷除$ 灯,固採用與上一實施例相同的作法,即在去離子水 入二氧化碳且溶解、解離,再用此水來進行對晶片的J 步驟32,最後的乾燥步驟亦可用旋乾法33來使晶片乾燥\ 上述兩實施例中,最主要的共同點,乃是利用二 =於去離子水後所解離成的帶電離子來移除晶片上之靜 .何且兩只轭例之主要步驟相同,只是作些步驟流裎的 改變,皆作為CMP研磨後的晶月洗淨之用,且皆可除去因 刷洗所在晶片表面上所生成的靜電荷,以讓此晶片維持 好的品質。 — 以上所述僅為本發明之較佳實施例而已,炎祚用以限 &本發明之申請專利範圍;凡其它未脫離本發明所揭示之 精神下所元成之專效改變或修飾,均應包含在下述之申請 專利範圍内。Page 11 426558 V. Description of the invention (8)-The brushing step 30 is performed. As described in the previous embodiment, this brushing (cleaning at the mouth) step 30 will leave an electrostatic charge on the crystal moon; The step of sonic cleaning 31 (also can be omitted); the next cleaning step only needs to wash away the remaining particles, and must also be able to remove the above charge from the lamp, using the same method as the previous embodiment, that is, in the Ionized water enters carbon dioxide, dissolves and dissociates, and then uses this water to perform the J step 32 on the wafer. The final drying step can also use the spin-drying method 33 to dry the wafer. \ In the above two embodiments, the most common point is It uses two = charged ions dissociated after deionized water to remove the static on the wafer. What's more, the main steps of the two yoke examples are the same, except that some steps are changed. Both are used as crystals after CMP polishing. It is used for monthly cleaning, and it can remove the electrostatic charge generated on the surface of the wafer where the brush is located, so that the wafer can maintain good quality. — The above description is only a preferred embodiment of the present invention, which is used to limit & the scope of patent application of the present invention; all other specific changes or modifications that do not depart from the spirit disclosed by the present invention, All should be included in the scope of patent application described below.
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