TW424003B - System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing - Google Patents

System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing Download PDF

Info

Publication number
TW424003B
TW424003B TW86104489A TW86104489A TW424003B TW 424003 B TW424003 B TW 424003B TW 86104489 A TW86104489 A TW 86104489A TW 86104489 A TW86104489 A TW 86104489A TW 424003 B TW424003 B TW 424003B
Authority
TW
Taiwan
Prior art keywords
patent application
ultra
sensor
item
scope
Prior art date
Application number
TW86104489A
Other languages
Chinese (zh)
Inventor
Joe G Hoffman
R Scot Clark
Allen H Jones Jr
Original Assignee
Startec Ventures Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Startec Ventures Inc filed Critical Startec Ventures Inc
Application granted granted Critical
Publication of TW424003B publication Critical patent/TW424003B/en

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)

Abstract

A system and method for mixing and/or diluting ultrapure fluids, such as liquid acids for semiconductor processing. The system includes first and second chemical dispensers, the first and second chemical dispensers adapted to contain first and second fluids to be mixed respectively; a process connection between the first and second chemical dispensers which allows the first and second fluids to flow therethrough and intermingle to form a mixed fluid the process connection further allowing the mixed fluid to flow to a location needed by the operator; and an ultrasonic wave emitting device, the device provided in a location sufficient to transmit an ultrasonic wave through the mixed fluid, the device including means to measure the velocity of the wave through the mixed fluid, and thus indirectly measure a ratio defined by a quantity of the first chemical to a quantity of the second chemical in the mixed fluid. Preferably mixing of a three-component formulation is performed by sequential two-component mixing steps.

Description

4 24 00 3 A7 B7 五、發明説明(/ ) 輕濟部中央梯率局真工消费合作社印«. 發明說明 發明背景和溉述 本發明概括地有醞半導體處理*且特別是有關大準確 度的超純疲體藥劑之混合。 琨場超纯化 本案發明人開發出一棰在位於半専體晶圓製程場所的 現場(omite)系统内製備超高純度液體藥劑(包括HF, HC1, NH4 OH, WfU F,和UN(h水溶掖)之方法。於氨水的 例子中*此方法係經由下述而實施的:從液氨儲器吸取氨 - — ~ ^- · - 蒸氣,及用髙PH纯水(較佳者已與氨氣流平衡過的超純去 ,_______ - 一------- 離子水)洗滌經過滤過的琴氣。此發現促成在不需要傳統 塔式蒸豳之下將工業鈒氨轉變成具有足夠高纯度可供高精 密製造所用之氨。從供給儲器吸取氨蒸氣g_.IL為一ϋ 階劈蒸餾,可消除不揮發份和.高沸雜質,例如鹼金鼷和鹼 土金S的氧化物,碳酸鹽和氫化物·過渡金屬鹵化物和氫 化物,及高沸烴和鹵碳化饬。而於工業级氨中發現的先前 認為需要用蒸皤來脫除掉的反應性揮發性雜質例如某些過 渡金羼鹵化物*第I族金靨氫化物和鹵化物*某些第I V 族氫化物和鹵化物,及鹵素等經發現能夠經由洗滌脫除掉 到足供高精密操作所用的超純化辱度。此為非常令人訝異 的發琨*因為滌氣技術在傳統上是被用來脫除大規棋而非 撤規横的雑質者。此種系統的细部載於共同申請中的美國 乙m0 0丄出申_請)一其併於 4 * 本紙張尺度適用中國國家棣率(CNS > A4规格(210X297公釐) 請 先 背 之· 注 意 寫、' 本 頁 訂 f 424 003 «濟部中央樣準局員工«费合作社印*. •4 •A A7 B7五、發明説明(i) 本文作為參考-及載於共同申請中的臨時申請案 08/499,425 ,08/499,414,和 08/499,413,全都是在 1995年 7 月7日提出申請者之中•且全都併於本文K為參考。 本案發明人也已開發出過氧化氫現場鈍化系統,且彼 等糸统的细部載於共同申請中的美國臨時申請案 08/439,427(1995年7月7日提出申請)*其併於本文作為參 考。 背景:濕式和乾式處理 半導體製程中歷時甚久的技術轉變之一即為乾式與濕 式處理之間的改變(及預期改變)。於乾式處理中*只有 氣態或電漿相反應物會接觸到晶圓。於濕式處理中,有多 種疲體藥劑供各種目的所用例如蝕刻二氧化矽或脫除固有 的氯化物層,脫除有機物質或微量有機雜質,脫除金屬或 撤置有機雜質,蝕刻氮化矽•蝕刻矽。 霜漿蝕刻具有許多吸引性能力*但$於清潔而言仍顯 不足。其中單純地就是沒有可用的化學來脫除某些最不好 雜質,例¢0金。因此對於現代半導體製程而言濕式清潔 方法係必要者*且於可見的未來可能保持其必要性。 電漿蝕刻是在光阻躭定位之下實施的,且不能直接縝 以高溫步髁。相反地該光阻層要剝除掉,因而需要清潔步 , •严- . 驟。 清潔步驟必須脫除掉的物質可能包括:光阻層殘渣( 有機聚合物):納;醮土金屬(如眄或鎂);及重金厪( -5- (請先閲讀背面之注意Ϋ項f>.^·寫本頁) -裝· 訂 本纸依尺度適用中國國家棣準(CNS ) A4规格(210X297公釐} 4240034 24 00 3 A7 B7 V. Description of the invention (/) Printed by the Industrial and Commercial Cooperatives of the Central Slope Bureau of the Ministry of Light Industry «. Description of the invention Background and description The present invention is broadly conceived for semiconductor processing * and is particularly concerned with large accuracy A blend of ultra-pure fatigue agents. Horiba Ultra Purification The inventor of this case has developed a high-purity liquid pharmaceutical preparation (including HF, HC1, NH4 OH, WfU F, and UN (water soluble) in an on-site (omite) system located at a semi-carcass wafer processing site.掖) Method. In the case of ammonia water * This method is implemented by sucking ammonia from the liquid ammonia reservoir-~ ^-·-steam, and using 髙 PH pure water (the better has been with ammonia The ultra-pure gas stream is balanced, _______-one ------- ionized water) to wash the filtered harp. This finding has led to the conversion of industrial ammonia to a sufficient level without the need for traditional tower steaming. High-purity ammonia for high-precision manufacturing. Ammonia vapor g_.IL is drawn from the supply reservoir as a one-stage split distillation, which can eliminate non-volatile content and high-boiling impurities, such as alkali gold tincture and alkaline earth gold S oxide. Carbonates and hydrides · transition metal halides and hydrides, and high-boiling hydrocarbons and hafnium halides. Reactive volatile impurities such as a Some transition Au halides * Group I Au hydrides and halides * Some Group IV hydrogens Substances, halides, and halogens have been found to be removed by washing to a degree of ultra-purity sufficient for high-precision operations. This is a very surprising hair bun * because scrubbing technology has traditionally been used Come to remove the big players instead of the unscrupulous players. The details of this system are listed in the joint application of the United States (m0 0) (completion application_please) together with 4 * This paper standard applies to the Chinese national rate (CNS > A4 specifications (210X297 mm) Please note first · Note, 'This page is f 424 003 «Staff of the Central Ministry of Economic Affairs of the Ministry of Economic Affairs« Fee Cooperative Cooperative Seal *. • 4 • A A7 B7 V. Description of the invention (I) This article is for reference-and provisional applications 08 / 499,425, 08 / 499,414, and 08 / 499,413 in joint applications, all of which were filed on July 7, 1995 and all are incorporated herein K is for reference. The inventor of this case has also developed a hydrogen peroxide in-situ passivation system, and the details of their systems are contained in the US provisional application 08 / 439,427 (filed on July 7, 1995) * It is incorporated herein by reference. Background: Wet and Dry Semiconductor Processes One of the long-lasting technological changes is the change (and expected change) between dry and wet processing. In dry processing * only gaseous or plasma-phase reactants will contact the wafer. In wet processing There are many fatigue agents for various purposes, such as etching silicon dioxide or removing the inherent chloride layer, removing organic substances or trace organic impurities, removing metals or removing organic impurities, etching silicon nitride and etching silicon. Cream etch has many attractive capabilities * but is still insufficient for cleaning. There is simply no chemistry available to remove some of the worst impurities, such as gold. Wet cleaning methods are therefore necessary for modern semiconductor processes * and may remain necessary for the foreseeable future. Plasma etching is performed under the position of photoresist, and cannot be directly performed at high temperature. Conversely, the photoresist layer needs to be peeled off, so a cleaning step is required. Materials that must be removed during the cleaning step may include: photoresist residues (organic polymers): nano; earth metal (such as osmium or magnesium); and heavy metals 厪 (Please read the note on the back f & gt first) ;. ^ · Write this page)-Binding · The bound paper is in accordance with China National Standard (CNS) A4 specification (210X297 mm) 424003

Mf A7 B7 五、發明説明(3 如金)。其中有許多不會整樓發佳J化物,致使電漿鼬 刻無法帶走彼等。所以需要使用濕式化學的清潔步驟。 這種情況的结果為在電漿蝕刻處的程序化學品所具純 度不再具關鐽性,因為在這些步驟之後及高溫步驟進行之 前都會施κ清潔步驟·且在高溫步驟於危險性雜質中驅動 之前,彼等潸潔步髁即可能從表面上脫除掉該等危險性雜 質。不過•疲體化學品的鈍度則變得遠較為翡鐽性•因為 其在半導體表面的影響率典型地比在霄漿蝕刻中者較高百 萬倍*且因為液體清潔步驟後而係直接績K高溫步驟之故 不過*湄式處理具有一項重大缺點,亦即皤子污染* ·_>一______________ 稹體_舅路構造中只用到少數添補筚(dopant)物種(硼,砷 - - · - ,磷•和有時候的銻)來形成所需的P-型和n-型添補區 (doped regions)。不過*許多其他物種皆為電活性添補劑 ,且為高度不良的雜質。這些雜質中有許多可能在遠低於 10 1 3 cm — 3濃度即具有損害性效應,例如増加接合 漏電。再者,某些較不佳的雜質會離析到矽中,亦即在矽 與水溶疲接觸時|矽中的雜質平衡濃度高於其在溶液中的 濃度。此外,某些較不佳的雜質具有非常高的掮散係數, 使得彼等添補劑在導到矽晶圓的任何部份内之後會使這些 雑質擴敗到各處,包括這些雜質會俾成漏®的接合J8。 因此*所有會用在半等體晶圓上的液體溶液較佳者都 K該具有極低水平的所有金靥離子。較佳者該所有金羼組 * 6 * 本紙張尺度逍用中國國家標準(0呢>八4規/格(210><297公釐> 请 先 閲 Ϊ3 之· 注 項 經濟部t央揉率局貝工消费合作社印装 經濟部中央標率局貝工消费合作社印¾ Λ 2 4 Ο 0 3 Α7 Β7 五、發明説明(f ) 合起來的必潘低於3』appt (份數每兆份)*且對任_^ 一種金屬要低於lOppt*且愈低愈好。再者*也必須控制被 一__·--- 陰睡子和陽離子兩者的污染。(某些陰離子可能具有不良 效應I例如被錯合的金屬離子可能堪原成在矽晶格中的移 動性金屬原子或離子)。 前端設施通常包括現塌純化系铳K製備高纯度水(稱 為"DI”水,亦即去離子水)。不過•更難K得到所需鈍度 的程序化學品。 背景:超鈍度混合 於半導體製程化學中•化學品的準確混合為高度優先 者。藥劑濃度的變異可能在蝕刻速率(及有時候遘擇性) 中導入不準確度 > 因而為程序變異的一種來源。程序變異 緦是不佳者•因為來自許多來滬的變異會傾向於累積起來 之故。 有許多超純化學品係需要一種以上的稀釋度者。(例 如,一般使用到幾種不用濃度的HF)。不過•運送超鈍化 學品的每軍位體積之成本係高者,因此若所有合意澹度的 化學品都必須運送到製造場所時,其費用可能高得令人不 能問津*特別者*此舉對於有時候會用到的非常稀之酸溶 疲而言係非常低效率者。 有一些半導體製造公司正利用g地接合Μ製備幾種稀 釋度的化學品*例如氫氟酸*供其程序所用。基於下述幾 棰理由,埴棰現場接合對於減低成本係有益者: 本纸張尺度適用中圉固家梯準(CNS ) A4規格(210X297公釐) 請先閲讀背面之注意事項寫本頁) -裝· 訂 經濟央標率s工洧费合作社印家 4 2 4 Ο Ο 3 .i at _Β7_ 五、發明説明(Γ ) 一只需運送濃酸•稀溶液所需的過1水即不招致運送成本 * 一只需要庫存和處置一種,或比一般實質減少數目的濃縮 物,而不需應付較大體積的幾種稀化學品;及 -可進行實時(real ti*e)澹度調整,因為實施濃度調整時 已不再需要花運送和處置時間之故。 不通,超捽液《«置的需要性對於在一般精密化學品 系统中為非常醅單的操作可能加上大幅限制。 背景:使用負載電池進行超鈍度混合 yd 琨行就地接合設備的一種形式中》已知有利用負載電 池來控制要摻合的化學品質量者。不過,負載電池儀器操 作會受限於: 一連接到稱重混合容器的管件所施加的不可預測力; -需要實驗室儀器來測定進入的化學品檢定值和程式調整 Κ彌補檢定的可變異性ί 一對於大的稀釋比例存在著標度解析不準確性;及 一典型地需要的昂貴電子設備會暴露到腐蝕性化學環境* 且電子姐件都容易被腐鈾*或若可取得且可行時*使用者 必須採用昂貴的非腐蝕性設備。 另一種已知的替代方法為使用體積法·例如在給美國 加州,Η ο Π i s t e r 的 A ρ ρ 1 i e d C h e n i c a 1 S ο 1 u t i ο n s 的美國專 利第 5. 148,945,5 ,330 ,072:5,370,269;和 5 ,417.34 6號中所 揭示者。不過•雖然逭些系统可對高稀釋比提供增加的解 本紙張尺度遢用中國8|家榣準(CNS > A4规格(210X297公釐) (请先聞讀背面之注意事項-r^i寫本頁) ‘裝- 訂 A7 B7 42^003 五、發明説明( 析度,彼等相對於比例變化却不具伸鑌彈性。 鎵上所述,半導體工業及使用化學混合物的其他工業 都有高度需要用到有效萆且不貴的設備來現場混合化學品 0 創新的用K混合超純度液體之系統和方法 本申請案述及一種新穎的在半辱S製造設施現場混合 超纯度液體的方法。為了提供準確的控制同時雄持非常緊 1一- —— · ·- . · '·- 密的對污染之管制*係使用連續添加來完成多成份的混合 較佳者該系絞包括密閉酒路自動控制系統•其中將代 表感測到的速度或計算出的密度之電信號導引到流速控制 器並反饋到位於第一和第二兩流體互锟點上游處的程序連 接中之流速控制閥(反饋控制系絞)。另外或與其配合者 ,可以採用一種前鎖控制程式;亦即,系統可探用工具( 例如超轚波工具)來感測來源化學品的組成;其可能為可 隨時間而變異者•並將彼等感測數據提供給控制下游流速 锖 先 閲 面 之 注 項 寫 本 頁 經濟部中失標率局負工消費合作杜印*. 予合棰 I 的 品 混三 nfig 學先第第 流 化品與到 度 棰學體推 鈍 多化流類 超 更兩合此。種 或二混依目多 種第種,數更 三和 一 體之或 將 一第滾鰭種 係第該合流兩 中將將混的合 其係後種合混 為中然二混為 統其,第要份 系,暖成為部 的即流形nl 佳亦合合中另 。 較,混混其的 構,融種品,明 结外交 一學鰻發 制另序第化滾本 控 依成鱧合 的 K 形流 1 本纸張尺度適用中國S家揉準(CNS ) A4规格(210X297公釐) 424003 λ Α7 _Β7__ 五、發明説明(1 ) 方法•其包括下列諸步驟: (a) 備好要混合的至少一第一流體和一第二流體; (b) 使該等流體流經可使該等流體互混的工具因而 形成一混合超純流體; (c) 將一超聲波導引經過該混合流體;及 (d) 測置透射過該混合流體的波速,藉此顯示出該 混合超纯流髖的密度且間接地測量出該混合流體中所含該 第一流體的最對該第二流體的量之比例。 較佳的系统和方法實施例包括一電腦,其具有工具經 由接收來自超轚波濃度監測器的倍號,將所接收到的信號 比對到一標的比例*及送出一信號到該轚波灃度監測器而 實時地監測和控制化學品的混合。 所得儍點包括: 每一化學品的檢定可在糸铳内測定且可在混合控制器 内程式規劃入對變異性的自動補償; 遊免掉負載電池問題,因而改良準確度;及 超轚波系统所提供的高解析度可提供1 /200或更佳的混合準 經濟部中央梂率為只工消费合作社印It 確度。 本發明的其他部份和儍點可在閱讀下列本發明詳细說 明後顯現出。 圖式之籣略說明 所掲示的本發明要參考後附画式予K說明*其中顯示 出本發明的重要實施例且其併於本發明說明軎作為參考· 本纸银尺度適用中國國家樣準(CNS ) A4規格(210X297公釐) 4 2 4 00 3 濟部中央梂準局月工消费合作社印製 A7 B7五、發明説明(公) 其中: 圖1 A為根摟本發明的系统,K0小比例示出的槪略流 程圖;且 圖2 A-2D為閭明根據本發明實施例1中所討論的特定流 體速度對混合濃度之圃形。 圃1為一製造超鈍氨的單元實施例之工程流程圔。 匾2為其中姐人B1所示氨純化軍元的半導體製造線之 方塊圔。 圈3A所示為在一產生軍元中的程序滾之總覽,其中係 將超純氨導到氬氟酸中Μ製成經媛街的HF»且圈3B1-3B3所 示為圖3Α的程序流一實施例之詳细P&ID圖。 圈4所示為根據所揭示的創作一具體實施例之現場H F鈍 化器。 圚5所示為在一體稹巳知漶度和速度的HF中依次加入 ΒΝ〇3和HAc時對所得HF,HH〇3和HAc混合物的g波速度之影 響。其中先加入HN03到一指定的鱧積比》然後加入HAc到 最後的指定鱧積比。所試驗的溶疲之最後體積比為6:1: 5和 3:l:2(HF:H(J〇3 :HAc)。經觀察混合物的轚波速度係随 著Hfi〇3的添加而堉高而餹著HAc的添加而減低。 圖6所示為在三個分別試驗中加入幾種H F漶度時對一濃 度Ht)〇3的轚波速度之影響。當ΗΝ03對HF的比例為最大時 聲波速度即為最大。 V Β 7所示為依次添加硝酸和乙酸時對一已知濃度的HF所 -11- 本紙張尺度適用中國困家標準(CNS > A4规格(210X297公釐) 請先W讀背面之注$項^1寫本寅) -裝- Ϊ --1 經濟部中央梂车局貝工消费合作社印装 424003 4 A7 B7 五、發明説明(?) 得轚波速度之影堪。所測得的®波速度偽随著硝酸的添加 而増高,但随著乙酸的後蹟添加而減低。 較佳實施例之詳细說明 本發明的許多創新性揭示要特別參照本發明較佳實施 例(作為範例而非給予限制者)予K說明,其中: 睡1 A為本發明較佳系統實施例的概略程序流程圓。該 系統的主要组件包括一接合槽2·成品產物辟存槽4*和一 化學品分配器6。第一種,第二種和第三種化學品C1,C2,和 C 3偽分別S由導管8, 10和12進人系統。去離子水可經由導 管14進入。導管8,10,12和14都在接合槽2终止,較佳者為 如所闞示者,不過別種管件配置也可能有利。 兩個泵16和18較佳者係配置在靠近接合槽2處。泵16和 18較佳者係利用導管20所供給的清潔空氣予Μ空氣驅動。 泵18係用為排液泵*而泵16係用為化學品混合物輸送泵將 化學品混合物輪送到成品產物貯存槽4之中。化學品混 合物輸送泵16係從導管抽取*且具有一排放導管26從 泵16的排放口導到槽4 。 接合槽2中係Μ已知方法和裝置保持在一水平*例如用 疲面水平感測,顯示性控制簞元22*其具有經程式處理的 設定點水平且使其相對於實際測得水平相比較。若水平太 低時控制單元22會發出信號給流動控制閥23Κ將更多的化 學品C1導到接合槽2內。諸於此技者都可察出其他變異方式 以完成水平控制。 -1 2- 本紙張尺度適用中國固家標牟(CNS ) Α4規格(210父297公;^ L-----------長-- (請先M.讀背面之注項寫本X)Mf A7 B7 5. Description of the invention (3 as gold). Many of them do not make good J compounds throughout the building, making them impossible to take away. Therefore, a wet chemical cleaning step is required. The result of this situation is that the purity of the process chemicals at the plasma etching site is no longer critical, because the κ cleaning step is applied after these steps and before the high temperature step is performed, and in the high temperature step in hazardous impurities Before driving, they may remove such dangerous impurities from the surface. However, the inertness of the fatigue chemicals becomes much more turbid. Because the impact rate on the semiconductor surface is typically millions of times higher than that in gel etching * and because it is directly after the liquid cleaning step. The reason why the high-temperature step is not true is that the Mekong type treatment has a major disadvantage, that is, the pollution of radon. --·-, Phosphorus • and sometimes antimony) to form the required P-type and n-type doped regions. However * many other species are electroactive supplements and are highly undesirable impurities. Many of these impurities can have detrimental effects at concentrations well below 10 1 3 cm — 3, such as increased junction leakage. Furthermore, some of the poorer impurities will segregate into the silicon, that is, the equilibrium concentration of impurities in the silicon will be higher than its concentration in solution when the silicon is in contact with water. In addition, some of the poorer impurities have very high dispersion coefficients, which makes their supplements spread to all places after being introduced into any part of the silicon wafer, including these impurities. Drain® Joint J8. So * all liquid solutions that will be used on semi-isomeric wafers should have extremely low levels of all gold ions. The better one is all gold 羼 group * 6 * This paper size is free to use the Chinese national standard (0 it > eight 4 gauges / division (210 > < 297 mm >) Please read the note 3 of the Ministry of Economic Affairs t Printed by the Central Government Bureau of Shellfish Consumer Cooperatives Printed by the Central Standards Bureau of Shellfish Consumer Cooperatives ¾ Λ 2 4 〇 0 3 Α7 Β7 V. Description of the Invention (f) The combined must be less than 3 "appt (number of copies) Per mega portion) *, and for any _ ^ a metal should be lower than lOppt * and as low as possible. Moreover * must also be controlled by a __ · --- pollution of both sleepy and cations. (Some Anions may have adverse effects. For example, mismatched metal ions may be converted into mobile metal atoms or ions in the silicon lattice. Front-end facilities usually include in-situ purification systems 铳 K to produce high-purity water (called " DI ”water, also known as deionized water). However, • It is more difficult to obtain the program chemicals with the required passivity. Background: Ultra-passivity is mixed in the semiconductor process chemistry. • Accurate mixing of chemicals is a high priority. Variations may introduce inaccuracies in etch rates (and sometimes optional) > It is a source of procedural variation. Procedural variation is not good. • Because many variations from Shanghai tend to accumulate. There are many ultra-pure chemicals that require more than one dilution. (For example, general Several types of HF are used at different concentrations). However, the cost per unit volume of transporting ultra-blunt chemicals is higher, so if all the chemicals of the desired degree must be shipped to the manufacturing site, the cost may be high It is inexplicable * especially * This is very inefficient for the very dilute acid solution that is sometimes used. Some semiconductor manufacturing companies are using g-field bonding to prepare several dilution chemicals * For example, hydrofluoric acid * is used for its procedures. For the following reasons, on-site bonding is beneficial for reducing costs: This paper size is applicable to the CNS A4 specification (210X297 mm) Please read the notes on the back first to write this page)-Assembling and ordering the economic standard rate s Labor cost cooperatives India 4 2 4 Ο Ο 3 .i at _Β7_ V. Description of the invention (Γ) One only need to transport concentrated acid • Dilute solution No more than 1 water is required to incur shipping costs * One requires inventory and disposal of one, or a substantially reduced number of concentrates, and does not need to deal with several large volumes of several rare chemicals; and-real-time (real ti * e) The adjustment of the degree, because the transportation and disposal time are no longer required when the concentration adjustment is implemented. Nowhere, the need for the ultra-liquid solution «« is a very simple operation in general precision chemical systems. Significant restrictions may be added. Background: One form of ultra-blunt hybrid yd using load cells for in-situ bonding devices is known. "Load cells are used to control the quality of chemicals to be blended. However, the operation of a load battery instrument is limited by:-the unpredictable force exerted by the tubing connected to the weighing mixing container;-laboratory instruments are required to determine incoming chemical verification values and program adjustments to compensate for the variability of the verification ί A scale inaccuracies for large dilution ratios; and expensive electronic equipment typically required will be exposed to a corrosive chemical environment * and electronic components are easily susceptible to uranium decay * or if available and feasible * The user must use expensive non-corrosive equipment. Another known alternative is to use the volume method. For example, in the United States Patent No. 5. 148,945,5,330,072 to California, U.S.A. ρ ρ 1 ied C henica 1 S ο 1 uti ο ns. : 5,370,269; and 5,417.34 as disclosed in No. 6. However, although some systems can provide increased resolution for high dilution ratios, paper sizes use China 8 | Home Standard (CNS > A4 size (210X297 mm) (Please read the precautions on the back first -r ^ i (Write this page) 'Binding-order A7 B7 42 ^ 003 5. Description of the invention (resolution, they are not flexible with respect to proportional changes. As mentioned above, the semiconductor industry and other industries using chemical mixtures are highly Effective and inexpensive equipment is needed to mix chemicals on-site. 0 Innovative system and method for mixing ultra-purity liquids with K. This application describes a novel method for mixing ultra-purity liquids on-site at a semi-fat S manufacturing facility. In order to provide accurate control and maintain a very tight attitude at the same time---·-. · '·-Close control of pollution * Use continuous addition to complete the mixing of multiple ingredients Automatic control system • where an electrical signal representing the sensed speed or calculated density is directed to the flow rate controller and fed back to the flow rate control valve in a program connection upstream of the first and second fluid mutual points ( Feed control system). In addition or in conjunction with it, a front lock control program can be used; that is, the system can detect the composition of the source chemical with a tool (such as an ultrasonic wave tool); it may be capable of over time And the mutants will provide their sensing data to control the downstream flow rate, read the note on the first page, write the page on the page of the Ministry of Economic Affairs, the Bureau of Loss and Consumption Cooperation, Du Yin *. Yuhei I's product mix three nfig The first-ranked fluidized product and the duotuo body pushed the blunt multiple-flowed fluid into a super combination. The species or the second mixed species and the first species, the number of the three and the one or the first rolled fin species line The confluence of the two will be the combination of the mixed species of the latter into the middle and the second mixed into the first, the main component system, the warmth becomes the part of the manifold nl is also good to combine the other. , Mixed seed products, clearing up the diplomatic system, e-learning system, another order, roll-up control, integrated K-shaped flow, 1 paper size, applicable to China S family standard (CNS) A4 (210X297 mm) 424003 λ Α7 _Β7__ 5. Description of the invention (1) Method • It includes the following steps: (a) Preparation At least a first fluid and a second fluid to be mixed; (b) passing the fluids through a tool that allows the fluids to mix with each other thereby forming a mixed ultrapure fluid; (c) directing an ultrasonic wave through the The mixed fluid; and (d) measuring the wave velocity transmitted through the mixed fluid, thereby displaying the density of the mixed ultrapure flow hip and indirectly measuring the most to the second fluid of the first fluid contained in the mixed fluid Proportion of the amount of fluid. A preferred embodiment of the system and method includes a computer with a tool that compares the received signal to a standard ratio * by receiving a multiple from a super-wave concentration monitor * and sends a A signal is sent to the wave level monitor to monitor and control the mixing of chemicals in real time. The obtained silly points include: the verification of each chemical can be measured in the radon and can be programmed into the hybrid controller to automatically compensate for variability; eliminating the problem of the load battery, thereby improving the accuracy; and the ultra-wave system The high resolution provided can provide 1/200 or better of the mixed quasi-economic ministry's central government rate for only consumer cooperatives. Other parts and silly points of the present invention will appear after reading the following detailed description of the present invention. The schematic description of the drawings shows the present invention with reference to the attached drawing to K description * which shows the important embodiments of the present invention and it is also included in the description of the present invention for reference. The silver scale of this paper applies to Chinese national standards. (CNS) A4 specification (210X297 mm) 4 2 4 00 3 Printed by the Ministry of Economic Affairs, Central Bureau of quasi- Bureau of the Moon Industry Consumer Cooperative A7 B7 V. Description of invention (public) where: Figure 1 A is based on the system of the present invention, K0 A small scale flowchart is shown in a small scale; and FIGS. 2A-2D are diagrams showing a specific fluid velocity versus mixed concentration according to the embodiment 1 of the present invention. The garden 1 is an engineering process of an embodiment of a unit for manufacturing ultra-blunt ammonia. The plaque 2 is a block 圔 of a semiconductor manufacturing line for the ammonia purification army shown by sister B1. Circle 3A shows an overview of the program roll in a generation army, where ultra-pure ammonia is introduced into argon fluoride acid to make HF of Jingyuan Street. Circle 3B1-3B3 shows the program of Figure 3A. A detailed P & ID diagram of an embodiment. Circle 4 shows an on-site H F blunt device in accordance with a specific embodiment of the disclosed creation. Figure 5 shows the effect on the g-wave velocity of the resulting mixture of HF, HH03, and HAc when BNO3 and HAc were added to HF with the known degree and velocity in one body. Among them, first add HN03 to a specified volume ratio, and then add HAc to the final volume ratio. The final volume ratios of the tested dissolution were 6: 1: 5 and 3: 1: 2 (HF: H (J03: HAc). It was observed that the wave velocity of the mixture was increased with the addition of Hfi03. It is high and decreases with the addition of HAc. Figure 6 shows the effect of the addition of several HF degrees in three separate experiments on the wave velocity of a concentration Ht). When the ratio of ΗΝ03 to HF is the maximum, the acoustic wave velocity is the maximum. V Β 7 shows the HF institute with a known concentration when nitric acid and acetic acid are added in sequence. 11- This paper size applies to Chinese standards (CNS > A4 size (210X297 mm). Please read the note on the back. Item ^ 1 written version Yin)-equipment-Ϊ --1 Printed by the Bayou Consumer Cooperative of the Central Bureau of Vehicles of the Ministry of Economic Affairs 424003 4 A7 B7 V. Explanation of the invention (?) The speed of the wave is quite impressive. The measured wave velocity pseudo increased with the addition of nitric acid, but decreased with the addition of acetic acid. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Many innovative disclosures of the present invention must be described with particular reference to the preferred embodiment of the present invention (as an example rather than a limiter), where: Sleep 1 A is a preferred system embodiment of the present invention The outline of the procedure flow. The main components of the system include a joining tank 2 · a finished product storage tank 4 * and a chemical dispenser 6. The first, second, and third chemicals, C1, C2, and C3, enter the system through conduits 8, 10, and 12 respectively. Deionized water can enter through the conduit 14. The conduits 8, 10, 12 and 14 all terminate at the engagement groove 2, preferably as shown, although other types of tube arrangements may be advantageous. The two pumps 16 and 18 are preferably arranged near the joint groove 2. The pumps 16 and 18 are preferably driven by the clean air supplied from the duct 20. The pump 18 is used as a drain pump * and the pump 16 is used to transport the chemical mixture into the finished product storage tank 4 as a chemical mixture transfer pump. The chemical mixture delivery pump 16 is drawn from a conduit * and has a discharge conduit 26 leading from the discharge port of the pump 16 to the tank 4. The known method and device in the joint groove 2 are maintained at a level * such as sensing with the level of the tired surface, and the display control unit 22 * has a programmed set point level and makes it relative to the actual measured level. Compare. If the level is too low, the control unit 22 will send a signal to the flow control valve 23K to guide more chemicals C1 into the engagement tank 2. Those skilled in the art can detect other variations to complete level control. -1 2- This paper size applies to China Gujiamu (CNS) Α4 specification (210 fathers and 297 males; ^ L ----------- long-- (please read M. Note on the back first) Copybook X)

、1T A7 424 003 B7 五、發明説明(,。) (褚先閲讀背面之注$項厂‘寫本頁) 本發明的一項重要部份在於裝設著一e波组合模姐 (S ο n i c C ο b ρ 〇 s r t i ο n e 〇 d u 1 e) 2 8,本文也稱之為"S C Μ ” 〇 S CM 2 8係測量透射過從排放導管26流經的化學品混合物之 轚波或脈波所具速度。透射過化學品潖合物的轚音脈波所 具速度(音速)係直接闕聯於C1在C2中的濃度•或更怡當 地說*鼷聪於C1和C 2化學品混合物中的C1對C2體積比。根 據設定點或標的比例,若速度太低或太高時* SCM 2 8會送 出一恰當的電子信號到幾個流動控制閥中的一個,例如分 別調節化學S C2和C3的流動之控制閥29和31 (該信號係一 次只送到一個控制閲使得化學品在混合物中的添加係依序 者)。這種反饋控制運輯可用前饋主控制迴路予Μ修改, 該埋路包括,例如,用感測在控制閥23,2 3和31等上游處 的化學品Cl* C2,等的纯度或澹度之組件。可以將實際的 鈍度或滬度與設定點的肫度或濃度比較,並將一恰當信號 ”前向地送到控制閥23· 23和31,Μ彌補純度變化。當然 ,必須小心地使用其本身不會促成要混合的化學品中有不 可接受的雜質之感测元件。 娌濟部中央標率局貝工消费合作社印装 一種市面上可取得的S CM,且為較適用於本發明糸統和 方法之中者*為可得自MESA LABORATORIES, IHC, N u s ο n i e s D i v i s i ο η , W h e a t R i g e , C ο 1 〇 r a d 〇 的商品名為 "MODEL 88"和”88 SCiT者。如在此單元的操作手冊中所述 者(該手冊併於本文作為參考> ,澹度輪出值係從慮及濃 度和溫度兩及視情況的壓力對流髏中的音速之影«的程序 -13- 本紙張尺度適用中0國家梯準(CNS ) A4规格(210X297公釐) 4 2 4 Ο Ο 3 Α7 Β7 五、發明説明(I丨 模型所導出的計算值。濃度可表成各種單位,包括重量百 分比,密度/比重*和特殊簞位如布里度Γ Brix)或波美 度(° Bauae)。 較適用的S CMs包括兩個主要的組合體,一發射器和一 轉換器。發射器典型地係安裝在轉換器的約2 5至約10 0呎 内。轉換器為SCM的濕元件。其偽安裝在程序専管之内•例 如安裝在圇1中所示等管2 6之内。彼等也可Μ安裝在採樣通 路之内。較適用的轉換器具有一速度轉換器和一溫度轉換 器更佳者都裝在相同的轉換器主體之内*該主體係焊接成 的*因而可避免使用彈性體密封Κ免其在極壓*極溫之下 或腐蝕性環境之中敗壊掉。另一種較適用的轉換器為一種 ”線軸Μ設計*其中安裝著一線軸,其具有與供化學品混 合物流經所用的導管幾乎相同的直徑。該線軸包括彼此正 對安裝且與管壁齊平的個別傅送和接收轉換器•另外堪安 裝著一溫度轉換器。兩類轉換器都在可從上引MESA LABORATORIES K 商品名 *M0DEL 88” 得到的 SCM 中。如 前文所敘述者*可在所用的SCM中組人一壓力轉換器•不 過由於壓力對音速的影響只有0.0 1米/秒/ psi (如 MESA LABS操作手冊中所提者)*因此很少需要懕力轉換器 者。 該發射器和轉換器係依上引MESA操作手冊中所述者予 K操作|該手冊由是併於本文作為參考。 本發明的另一重要部份包拮在成品產物貯存楢4上面裝 -14- 本紙張尺度適用中國國家標準(CNS > A4規格(210Χ297公羞) 請 先 閲 讀- 背 之 注 項 訂 經濟部中夬梯準局—工消费合作社印家 經濟部中央揉準局貝工消费合作社印* 4 2 4 Ο Ο 3 ^ at Β7 五、發明説明(A ) 設水平控制器32,34,36,和38。這些係用來在需要實施批式 混合和輸入進料時予Μ確保水平而沒有任何溢流或排盡之 危險。 要使用本發明糸铳和方法時•於本發明較佳實施例中 ,要先選擇要摻合的化學品疲體。然後Κ已知稀釋度在摻 合槽内製備第一化學品。第一化學品的體積不是特別重要 者•不遇當然必須癍免過度填充該摻合槽。然後選擇出要 與該第一化學品摻合的第二化學品並呈現到摻合槽内。該 摻合槽包括混合工具*例如搜拌器,擋板,旋渦破碎器 (vortex breaker)等•足Μ密切地混合諸化學品◊之後* 開始從摻合槽排出一疲流經過一導管到成品產物貯存槽。 在該導管内装設有一 S波濃度監測器(eS CM),其將轚音倌 號送經該流體混合物:測量該轚音信號的速度,與設定點 或標的混合物比較·並產生一信號Μ指示一或多個控制閥 來諝整諸化學品中之一或去離子水的流速*而產生所欲的 化學品1和2之比例。接著Κ相同的依次方式將第三種•第 四種,及多達第η種化學品添加到摻合楢内Κ產生第二。 第三和第η—1種混合物。 本發明要參考下面的實腌例予Κ更佳地了解,其中除 非另外指明,否則所有比例和百分比皆為Κ重量計者。 實胨例1 於此實施例中,使用一種琨場接合單元將氮氟酸(HF) •硝酸(ΗΝ〇3 ),和乙酸(Cfl3 C00H或HAc)K各種傾積比例予 -15# 本纸張尺度逍用中國國家梂準(CNS Μ4规格(2丨OX297公釐) 請先閱讀背面之注意事項r>i寫本頁) ‘裝. -訂 4 24 00 3 "ΐ» at Β7 五、發明説明(β ) 以混合。該混合係依下述依次進行的: 1) 於空摻合槽中添加4 9HSHF。 2) 依指定的體積比添加HN03 ◊ 3) 最後添加HAc到最後體積比。 測量和控制姐成的最良好措施為使用Mesa Labs Model 8 8S音濃度監測器(SCH)。因此,要實施預備査證Μ確定随 著每一種上述成份的依次添加含有可用的S音速度變異。 (當然*用來確定敏感度的附加測量和混合步膝都不是正 常生產用途的一部份)。 預備査證程序 此實施係根據Model 88 SCM操作手冊的4.3酣實施的 。對於此査證程序,係使用磁攪拌器來滅少溫度稀度(不 遇其一般不用在超鈍生產設施之中)。實驗步驟如下所述 1) 添加43XHF (已知的速度) 2) 添加HN03到(標的體積比-5X)並拥量速度 3) 添加HN〇3到搮的體植比並測量速度 4) 添加HN03到(標的體積比+5¾)並測量速度 5}添加HAc到(標的體積比- 5¾)並測量速度 6) 添加HAc到標的體積比並測量速度 7) 添加HAC到(標的饉積比+5X)並測董速度 使用標準的50.0奄升滴定管來測置成份髏植。對於此試驗 選用兩_代表性〇:1111〇3:〇(;溶液:6:1:5產物和3:1:2產物 -16- 本纸張尺度適用中國國家標率(CNS ) Α4規格(210Χ297公釐> 請先Μ·讀背面之注意事項0.¾寫本頁 訂 'I . Μ濟部中央梯率局貞工消费合作社印*. 424 003 ^ A7 _ _B7_ 五、發明説明(β) 。此試驗係用Μ確定在代表性终點的有用之速度/濃度斜 率。 第一項試驗係針對接近6:1:5的HF/HNO3 /HAc體積比而 第二試驗係針對接近3:1: 2的體積比。所用的三種酸之澹度 (重量X)為:HF 43X;硝酸70% ;而乙酸為99.53;。 於每一情況中,都觀察到音速會隨著硝酸的添加而增 加而翕随著乙酸的添加而減低。 用6:1: 5混合物的預備査證结果 用6: 1:5混合物所得结果如下: 請先閲讀背面之注意事項δ寫本頁) 裝· 經濟部中央標率局貝工消费合作社印装 起始 添 加 Cum. Δ Vacou 溫度Ό 110奄升HF 1327.76 22.20 + 10奄升 hno3 10 nit 1338.49 22.45 + 7.3奄升1^〇3 17.3 nit 1345.60 22.58 + 1毫升HN〇3 18.3 nit 1346.21 22.61 + 0.9毫升 HNO3 19.2 nit 1346.81 22.65 -17- 訂 本纸ft尺度遙用中國國家標率(CNS ) Α4说格(210X297公釐) 2.4 00 3 ,# A7 B7 五、發明説明(π 此结果顯示一經精確控制的混合半導馥级化學品之第 一階段。圃2Α為從此數據導出的標繪圖,顯示出音速與澹 度之間的關係。如此數據所示者•音速對於在此範圍内的 混合物提供良好的一次元澹度測量。 然後將如此產生的產物用於第二混合階段中,於其中 混合第三種成份: 請 先 閱· 之 注 h 銨濟部中央揉率局貝工消費合作社印*. 起始 添 加 Cum. △ Vacou 溫度t 100毫升 HF:HN〇3 1346.81 + 30毫升HAc 49.2 1316.53 21.30 + 10毫升HAc 59.2 1309.OS 21.28 + 28毫升HAc 87.1 1293.95 21.00 + 3.6牵升 HAc 90.7 1292.0Z 21.15 + 3.5奄升 HAc -18- 94.2 129G.22 21.2 本纸張尺度逍用中國國家標率(CNS ) A4規格(2丨0><297公釐) t 頁 訂 424 003 A7 B7 五、發明説明(ι &) 圖2B為從該數據導出的標繪圖,顯示出音速與澹度之間的 關係。如該數據所顯示者,音速對於此範圍内的混合物提 供良好的一次元濃度測量。依此*兩個連纊的混合步驟之 組合促成使用一次元感测器(音速感測)即可準確地測量 出三成份温合物的濃度。 请 先 閲 背 之 注 項 圈3:1: 2混合物所得預備査證结果 用3:1: 2混合物所得結果如下所列 頁 裝 經濟部中央標率局工消费合作社印裝 起始 添 加 Cum. Δ Vacou 溫度t: 120毫升HF 1329.69 22.5 + 30奄升 ΗΝ〇3 30 nit 1355.39 27.9 + 8毫升Μ〇3 38 1361.08 22.95 + 2奄升ΗΝ〇3 40 1362.46 22.93 + 2奄升ΗΝ〇3 42 1363.84 22.93 訂 本紙張尺度逋用中國圉家榇準(CNS ) Α4规格(210Χ297公釐) 424003 A7 B7 五、發明説明(|Γ1 ) ]_1 I__|_I__i 此结果顯示出精確控制的混合半導體级化學品之第一 階段。圖2C為從該數據導出的標繪圖,顯示出音速與濃度 之間的關係。如該數據所顯示者*音速對於在此範圍内的 混合物提供一種良好的一次元澹度測量。 如此產生的產物即用於第二混合階段中,於其中混合 第三種成份: 經濟部中央樣率局員工消费合作社印装 起始 添 加 Cun. Δ Vacou 溫度υ 100毫升3:1 HF+HN03 + 30毫升HAc 72 1320.09 21.1 + 18毫升HAc 89.6 1315.18 20.88 + 2.5毫升BAc 92 1313.31 20.95 + 2.5毫升 HAc 94.6 1311.6 21 -20- (請先軋讀背面之注$項r填寫本頁) 1 y裝'f七 項Γ:έ寫太 本紙張尺度逋用中國困家搮準(CNS ) A4規格(210X297公釐) 424 0034¾ at B7五、發明説明(『?) 画2D為從該數據導出的標繪圖·顬示出在音速與濃度 之間的關偽。如該數據所顯示者,音速對於在此範圃內的 混合物提供一種良好的一次元濃度測童。依此兩個依次的 混合步驟之組合可促成使用一個一次元感測器(音速感测 )即可準確地測量三成份混合物的滬度。 測霣敏感度 於下表中列出每一摞鑰圖在所考應的濃度範圃之斜率 。每一斜率明顯地大於Hodel 88的0.1米/秒重複性規格所 要求者。 斜率 硝酸對6:1:5產物……ml= 1 . 165 (米/秒每-1-份) 乙酸對6 : 1 : 5產物......0)2 = - 3 . 6 5 5 (米/秒每-卜份) 硝酸對3:1:2產物......m3= 2 76 (米/秒每-卜份) 乙酸對3:1:2產物……b4 = -3 . 58 (米/秒每-1-份) (請先閲讀背面之注$項10寫本頁) 裝· 訂 經濟部中央標準工消费合作社印«. 雖然沒有直接的反應熱數據測量可以取得,不過所觀 測到的最大溫度上升值為約0.4Ό。反應熱不預期為一項重 要因素。(註:Hass Labs對於Model 8 8所提出的典型酸性 系铳溫度係數為2至4米/秒/*0)。雖然反應熱為小者,不過 仍需要在所裝單元內有溫度調整能力。 货施例2 21- 本紙張尺度適用中國國家標準{ CNS } Α4規格(2丨0X297公釐) 2 4 五 鯉濟部中央揉準局貝工消费合作社印裂 π丨3 α Α7 Β7 發明説明(β) 在半専體處理中用到的第二棰三成份系統為各種稀釋 度的經媛衝氫氟酸。於此系统中,所用成份為HF水溶液* NIU F,和超純(DI)水。 於此類實腌例中,HF水溶掖和氟化铵水溶液兩者都較 佳者在半導體製造設施處琨場產生1使用如199 5年7月7日 提出申請的臨時専利申請序號08/4 39 ,562中所述的糸统和 方法•該專利申請案由是併於本文作為參考於此實施例 中先製備超純氣態HF,然後產生超鈍HF水溶掖(到音速感 測所測量的滬度•或對於幾種稀溶疲•到逹導電係數測量 所測得的溏度)。另外產生超純氣體氨*然後將該氣體氨 冒抱通到該超純〇水溶液内,其中係在一次元感測器输出 的控制之下進行*而產生所欲強度的媛衝HF。如此,再度 地*兩個連鑛的依次步软姐合提供對三成份混合物的精確 控制。於此程序中的個別步驟將在此予以較詳细地說明。 要特別提起者,於此實施例中,所有這些步驟都在半導體 製造設施處現場實施者。 NH3的純化 根據本發明,偽先從液氨供應儲器的蒸氣空間抽取氨 蒸氣。K這種方式抽取蒸氣可作為第一階段蒸餾|將某些 固態和高沸點雜質留在疲相中。該供應儲器可為任何習用 的供應檐或適合用來装氨的其他儲器*且該氨可為無水形 式或為水溶液形式。該齡器可保持在大氣壓下或必要時保 -22-本纸張又渡逍用中國國家揉準(CNS > A4洗格(210X297公釐) 經濟部中央楳率局男工消费合作社印¾ 4:24 003 ^ a7 B7 Γ, , 五、發明説明(>。) 持在高於大氣壓的壓力下以增強通過系統的氨流。該儲器 較佳者係經熱控制者*使得其溫度係在約1G°至約5〇υ, 較佳者約15°至約3510 *且最佳者約20°至約25C的範圍 之肉。 從蒸氣相抽取氨的结果,可脫除掉的雜質包括週期表 第1族和第I族的金靥,以及因接觸氨所致的埴些金臛之 胺化形式。此外•也排除掉的是這些金靥的氧化物和碳酸 鹽,Μ及氫化物例如氫化跛和氫化鎂;第Β族元素和其氧 化物,以及這些元素的氫化物和鹵化物之銨加成物;過渡 金靨氫化物;及重質烴和鹵碳化合物例如泵油(pump oil) Ο 從儲器抽取出的氨即通過一過濾軍元Μ去除被該蒸氣 夾帶的任何固體物質。微過濾和超濾單元和薄膜皆為市面 上可取得且都可以使用者。漶器的品鈒和類型係根據需要 而選定者。本較佳實施例係使用一粗逋器,接著在離子純 化器之前使用一 0.1微米濾器·且在該離子純化器之後不再 過漶。 然後將漶過的蒸氣通到一滌氣器*於其中用高ΡΗ純水 (較佳者去雜子水)來洗滌該蒸氣。該高PH水較佳者為氨 水溶疲,經由循澹經過該滌氣器將其澹度提升到飽和。該 滌氣器可像習用的滌氣塔一般以逆流方式方便地操作。雖 然操作溫度不是瞄鍵因素•不過該塔較佳者係在約10°至 約50*0,較佳者約15°至約35TC的溫度操作。同樣地,操 -23- 本纸張尺度適用中國困家捸牟(CNS > A4规格(2丨0X297公釐} 請先閲讀背面之注意事項-r>4->寫本頁) '裝· ϋ 經濟部中央揉率局貝工消費合作社印装 Α7 Β7 五、發明説明( >丨) 作壓力也不具關鐽性*不過較佳的操作偽在約大氣壓到高 於大氣壓約30 p si的壓力下操作。該塔典型地裝著習用的塔 填充料以提供高度的疲體與氣體間接觸*且較佳者也包含 一除濕段。 於本發明一較佳實賍例中,該塔具有約3呎(0.9泶)的 填充高度及約7吋(18公分)的内徑,而達到0.84立方炚(24 升)的填充體積,且其係在約0.3时水柱高(0.075KPa)的壓 力降及10 X溢流率之下操作*其標稱循環流速為約2. 5加侖 每分(〇· 16升/秒)或在2ϋΧ溢流率時為5加侖每分(0.32升/秒 )*其氣題入口係低於填充床,而其疲體人口係高於填充 床但低於除濕段。具有此種描述的塔所較適用的填充料為 具有小於塔直徑八分之一的標稱尺寸者。該塔的除濕段具 有類似或更密的填充*其他方面皆為習用構造者。必須了 解者在此段中的所有描述和尺寸皆只是範例而已。每一系 統參數皆可费異。 於典型操作中,其起姶步驟都是先用氨將去離子水飽 和形成用為起始滌氣介質用之介質。於滌氣器操作之中, 要定期地排出塔沈稹池中的少量液體以脫除蓄積雜質。 可被滌氣器脫除掉的雜質例子包括反應性揮發份例如 矽烷(SiH4 )和砷烷(AsH3 )磷,砷和銻的鹵化物和氫化物 ;一般的過渡金颺鹵化物;及第K族和第V I族金靨的鹵 化物和氫化物。 上文所描述的軍元可用批次*埋續或半連續方式搡作 -24- 本紙法尺度逋用中困S家搮準(CNS > Α4規格(2丨0><297公釐) (請先閲讀背面之注f項r4·窝本頁) _ .¾. ^'ΐν Π窝太 灯 A7 424 003 __B7_ 五、發明説明(θ) 。Μ連鑛或半連壤操作較適用。氨純化系統的體積處理速 率不具關鐽性且可有廣泛的變異。不過,於本發明可預期 使用到的大部份操作中,流經系統的氨流速係在約2 0 0立方 厘米/小時至數千升/小時的範圍内。 視需要,離開滌氣器的氨在使用之前可進一步纯化, 依純化氨所用特殊製造方法類型而定。當該氨預期要用於 ,例如,化學蒸氣沈稹時*在系統中加入一脫水單元和一 蒸餾單元係有利者◊該蒸餾塔也可以用批次,連鑛或半埋 鑕方式操作《於批次操作中•典型的操作壓力為300磅/平 方时絕對值(2,0680&>,批料大小為100磅(45.4公斤)。於 此例中的塔具有8时(2 0公分)直徑,72吋(183公分)高度* K 3G2溢流率操作,蒸氣速度為0 . 0 02 1呎/秒(0 . 0 0 0 6 7米/秒 )·理論相當板高為1.5吋,且其具有4 8相當板。於此例中 的鍋爐尺寸為約18时(45. 7公分)直徑和27时(68. 6公分)長 度,回流比為0.5,且其循環冷却水係在60Τ (15.61C)進入 而在90Τ(32.2υ)流出。同樣地,此僅作為範例;可以使 用構造和操作參數皆變異廣大之蒸餾塔。 經濟部中央揉率局貝工消费合作杜印It 依其甩途而定,經純化的氨•不論有或無蒸餾步驟* 都可能以纯化氣體或水溶液形式使用,於水溶液形式的情 況中係將經純化的氨溶解在純化水(較佳者去離子水)之 中。混合比例和混合工具皆為習用者。 圓1顯示出描逑根據本發明的氨鈍化單元一霣施例之 滾程Β。液氨係貯存在儲器11之中。從髄器中的蒸氣空間 -25- 本紙張尺度逍用中國S家梂準(CNS ) A4规格(210X2?7公釐) 4 24 00 3 A7 B7 經濟部中央揉率局貝工消费合作社印裝 五、發明説明 ) 抽 取 出 氨 蒸 氣 12後 t 通 過 一 瞄 閉 閥 13, 再通 過一' m 器 Η 〇 經 逋 過 的 氨 蒸 氣 1Ϊ » 其 流 速 係 受 壓 力 調 節器 16所 控 制 其 隨 後 卽 等 到 一 滌 氣 塔 Π 其 中 包 含 一 填 充段 18和 —1 除 濕 墊 1 £ 於 氨 蒸 氣 向 上 流 時 飽 和 氨 水 2 0係 向 下流 •該 液 體 係 rri 用 循 環 泵 21予 以 循 環 t 而 其 疲 體 水 平 係 受 水平 感測 器 22所 控 制 C 廢 液 23係 從 滌 氣 器 底 部 中 所 持 留 的 液體 中定 期 抽 取 出 〇 在 泵 25所 保 持 的 增 壓 下 將 去 離 子 水 24供 給到 辅 氣 器 17 0 經 滌 過 的 氨 26係 被 導 引 到 三 條 可 擇 途 徑中 之一 〇 這 二 條 途 徑 為 ⑴ 蒸 餾 塔 27 於 其 中 將 氨 進 一 步 洗 m 0 所得 蒸餾 氨 28即 導 到 使 用 點 0 ⑵ 溶 解 單 元 29 * 於 其 中 將 氨 與 去 離 子 水 30組 合形 成 水 溶 液 31 其 即 被 導 到 使 用 點 〇 對 於 有 多 個 使用 點的 I 廠 操 作 可 將 水 溶 液 收 集 到 持 留 槽 中 * 再 從 其中 將氨 油 取 到 個 別 管 線 内 供 相 同 工 廠 内 的 眾 多 使 用 黏 終點 所用 〇 ⑶ 輸 送 管 線 32 1 將 氣 體 形 式 的 氨 載 送 到 使用 點。 在 這 些 可 選 途 徑 中 的 第 二 和 第 三 途 徑都 不用 蒸 餾 塔 27 9 因 而 適 合 用 來 製 備 含 有 少 於 100份每兆份任何金屬雜質的 氨 0 不 過 » 對 於 某 些 情 況 而 加 入 蒸 豳塔 27係 較 適 當 者 〇 其 例 子 有 氨 的 爐 用 途 或 化 學 蒸 氣 沈 横 (C VD )用途C 若氨係 用 於 * 例 如 t CVD時 蒸餾塔可脫除掉可能干播CVD的 不 m 结 物 例 如 氧 和 氮 0 此 外 * 由 於 離 開 務 氣器 17的 氨 係 飽 和 著 水 因 此 視 需 要 依 蒸 餾 塔 的 特 性 和效 率而 定 1 可 在 26 - 請 先 閲 讀 背 之 注 寫 本 頁 本紙張尺度逋用中國圉家標準(〇呢)八4規格(210父297公釐) 經濟部中央梯準局負工消费合作社印«. 4 24 00 3 1 A7 _B7__ 五、發明説明(#) 糸統內於該滌氣器17與蒸餾塔27之間姐裝一脫水單元。 使用埴些可選擇途徑中的任一者時,所得物流1不論 其為氣態氨或為水溶液,都可分成兩道或更多道支流*分 別導到不同的使用站*如此該純化單元卽可將經純化氨同 時供給到許多使用站。 HF之鈍化 B 4所示為根據本說明書所掲示的創作之一實施例現場 H F純化器。 起始物質較佳者為基本上無砷的高纯度49XHF。披等低 砷物質可得自Allied Chenical。 該HF程序流包括一蒸發(及除砷)階段,一分餾塔Μ 脫除大部份其他雜質•一離子純化器塔Κ扣留不被分豳塔 脫除掉的雜質*及最後的HF供姶(HFS)。 視情況可將批次程序除砷步驟與蒸發器組合。於此遘 用措施中,係將砷轉化成+ 5態並在蒸皤中經由添加氧化劑 UMn〇4或(NH4 )z S2 〇8 )和一陽離子源例如KHFz Μ形成 盟K2 AsF7而持留在蒸發器内。此為一批次程序,係因為 此反應係鍰慢者,於進行蒸餾之前必須有充足的時間諶反 懕完全。此程序在捕稱溫度下箱要約一小時的接觸時間。 而為了在連續程序中達到完全反應,窬要高溫和高壓(對 安全性而言係不良者)或非常大的容器和管路。於此程序 中*偽將HF導到一批式程序蒸發器容器內*用氧化劑處理 間時攪拌一段適當的反應時間。 -27- 本纸張尺度逍用中國國家標率(CNS > A4規格(210X297公釐} (請先閲讀背面之注意事項r^'寫本頁) •裝· ----訂 經濟部中央揉準局負工消费合作杜印«. Α7 Β7 五、發明説明(A) 然後將HF導到一分餾塔内回流蒸豳Μ脫除大部分的金 靥雜質。在此步驟顯示出明顥減少的元素包括: 第1(1)族 Na 第 2(11)族 Ca, Sr, Ba 第 3-12 (IIIA-IIA)族 CΓ,W. Ho. Μ η,Fe, Cu, Ζη 第 13{III)族 Ca 第 14(IV)族 Sn. Pb.及 第 15(VII)族 Sb。 此分餾塔具有一糸列許多單鈍蒸餾的作用;其係用裝填著 高表面積材料的塔,以對流疲流方式進行因而確使下降的 疲體與上升的蒸氣之間有完全的平衡而達到者。在此塔内 只安裝一假部份冷凝器K提供画流且經鈍化的氣態HF於隨 後係導到HF雛子纯水器(HF IP)内。在此階段的HFM—般標 準而言係純者,不過可能夾帶砷處理化學品或脫除逭些化 學品所需的驟冷劑(quench)。 HF IP係在將HF氣饈専到供應系統内之前用為附加的純 度保證者。瑄些元素可能存在於處理溶疲中或導在IP内以 吸收HF氣流所夾帶的硫酸鹽。IP試驗證明下列元素在HF氣 體流雜質中有明顯的減少。 第2(I }族 Sr和Ba, 第 6-12 (VIA-IIA)族 Cr, W,和 Cu,, 1T A7 424 003 B7 V. Description of the invention (, ...) (Chu Xian read the note on the back of the $ item factory 'to write this page) An important part of the present invention is to install an e-wave combination mode sister (S ο nic C ο b ρ 〇srti ο ne 〇du 1 e) 2 8, which is also referred to herein as " SC Μ 」〇S CM 2 8 is a measurement of the wave or wave transmitted through the chemical mixture flowing through the discharge duct 26 The speed of the pulse. The speed (sound velocity) of the chirped pulse that is transmitted through the chemical compound is directly linked to the concentration of C1 in C2. Or more appropriately * Cong is better than C1 and C 2 chemistry The volume ratio of C1 to C2 in the product mixture. According to the setpoint or target ratio, if the speed is too low or too high * SCM 2 8 will send an appropriate electronic signal to one of several flow control valves, such as adjusting the chemistry separately S C2 and C3 flow control valves 29 and 31 (this signal is sent to only one control at a time so that the addition of chemicals to the mixture is sequential). This feedback control operation can be used to feed forward the main control loop to M modification, the buried road includes, for example, sensing upstream of control valves 23, 23, 31, etc. A component of purity or degree of chemical Cl * C2, etc. The actual inertia or degree can be compared with the degree or concentration of the set point, and an appropriate signal is forwarded to the control valve 23 · 23 and 31, M compensate for the change in purity. Of course, care must be taken to use sensing elements that do not themselves contribute to unacceptable impurities in the chemicals to be mixed. The Shell Standard Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs printed a commercially available S CM, which is more suitable for the system and method of the present invention * is available from MESA LABORATORIES, IHC, N us ο nies D ivisi ο η, W heat R ige, C ο 1 〇rad 〇 trade names " MODEL 88 " and "88 SCiT. As described in the operation manual of this unit (this manual is incorporated herein by reference > The degree rotation rate is based on the process of considering the speed of sound in the convection crosshead with the concentration and temperature as well as the situation «Procedure-13- This paper standard applies to the 0 national ladder standard (CNS) A4 specification (210X297 (Mm) 4 2 4 Ο Ο 3 Α7 Β7 V. Description of the invention (Calculated value derived from the model I 丨. Concentration can be expressed in various units, including weight percentage, density / specific gravity * and special niches such as Brix Γ Brix ) Or Baume (° Bauae). More suitable S CMs include two main assemblies, a transmitter and a converter. The transmitter is typically installed within about 25 to about 100 feet of the converter The converter is a wet component of SCM. Its pseudo installation is in the control of the program. Inside • For example, it is installed in the tube 2 6 shown in Figure 1. They can also be installed in the sampling path. More suitable converters have a speed converter and a temperature converter. Within the main body of the converter * the main system is welded * thus avoiding the use of elastomer seals to prevent it from being destroyed under extreme pressure * extreme temperatures or in corrosive environments. Another suitable converter is A "spool M design * in which a spool is installed, which has an almost the same diameter as the conduit used for the chemical mixture to flow through. The spool includes individual feed and receive converters installed facing each other and flush with the wall of the tube. • In addition, a temperature converter can be installed. Both types of converters are in the SCM that can be obtained from the above quoted MESA LABORATORIES K product name * M0DEL 88 ". As described above *, you can put pressure on the SCM used Converter • However, due to the effect of pressure on the speed of sound, it is only 0.0 1 m / s / psi (as mentioned in the MESA LABS operating manual) * so few power converters are needed. The transmitter and converter are based on the above quote MESA Operation Manual The manual is operated by K | This manual is hereby and incorporated herein by reference. Another important part of the present invention is the storage of the finished product. 4 Packing -14- This paper size applies to Chinese national standards (CNS > A4 Specifications (210 × 297 public shame) Please read first-The note of the back is set by the Ministry of Economic Affairs, China ’s Ladder Standard Bureau—Industrial and Consumer Cooperatives, India ’s Central Government Bureau, the Ministry of Economic Affairs, the Central Bureau of Standards, and the Bayer Consumer Cooperative ’s Seal * 4 2 4 Ο Ο 3 ^ at Β7 5 The invention description (A) is provided with level controllers 32, 34, 36, and 38. These are used to ensure that the level is maintained without any risk of overflow or exhaustion when batch mixing and input feeds are required. To use the method and method of the present invention In a preferred embodiment of the present invention, it is necessary to first select the chemical fatigue to be blended. The first chemical is then prepared in the blending tank at a known dilution. The volume of the first chemical is not particularly important • Of course, it is necessary to avoid overfilling the mixing tank. A second chemical to be blended with the first chemical is then selected and presented to the blending tank. The blending tank includes mixing tools * such as a searcher, baffle, vortex breaker, etc. • After the chemicals are closely mixed, the exhaust stream starts to flow from the blending tank through a conduit to the finished product. Product storage tank. An S-wave concentration monitor (eS CM) is installed in the catheter, which sends the 轚 sound 倌 number through the fluid mixture: measures the speed of the 轚 sound signal, compares with the set point or target mixture, and generates a signal M indicator One or more control valves to trim one of the chemicals or the flow rate of deionized water * to produce the desired ratio of chemicals 1 and 2. Then K is added in the same sequential manner as the third and fourth, and up to the nth chemical is added to the blended krypton to produce a second. Third and n-1 mixtures. The present invention should be better understood with reference to the following actual pickled examples, where all ratios and percentages are by weight of K unless otherwise specified. Practical Example 1 In this example, a field bonding unit is used to deposit various fluorinated acid (HF) • nitric acid (NONO3), and acetic acid (Cfl3 C00H or HAc) K to various -15 # paper Zhang Zhijiun uses the Chinese National Standard (CNS Μ4 specification (2 丨 OX297 mm) Please read the precautions on the back r > i write this page) 'Packing. -Order 4 24 00 3 " ΐ »at Β7 V. DESCRIPTION OF THE INVENTION (β) to be mixed. The mixing was performed in the following order: 1) 4 9HSHF was added to the empty blending tank. 2) Add HN03 according to the specified volume ratio. 3) Finally add HAc to the final volume ratio. The best way to measure and control your success is to use the Mesa Labs Model 8 8S Tone Concentration Monitor (SCH). Therefore, a preliminary check M should be performed to determine that the available S-sound velocity variation is added with each successive addition of the above components. (Of course * the additional measurements and hybrid steps used to determine sensitivity are not part of normal production use). Preliminary verification procedures This implementation was implemented in accordance with 4.3 of the Model 88 SCM Operating Manual. For this verification procedure, a magnetic stirrer is used to reduce the temperature leanness (in general, it is not used in ultra-blunt production facilities). The experimental steps are as follows: 1) Add 43XHF (known speed) 2) Add HN03 to (target volume ratio-5X) and hold the speed 3) Add HN〇3 to the body-to-vegetation ratio of the puppet and measure the speed 4) Add HN03 To (target volume ratio + 5¾) and measure speed 5} Add HAc to (target volume ratio-5¾) and measure speed 6) Add HAc to target volume ratio and measure speed 7) Add HAC to (target volume ratio + 5X) And measure the speed of Dong using a standard 50.0 liter burette to measure the composition of the plant. For this test, two representative 〇: 1111〇3: 〇 (; solution: 6: 1: 5 product and 3: 1: 2 product -16- This paper size applies to China National Standard (CNS) Α4 specifications ( 210 × 297 mm > Please read M. Note on the back side. 0. ¾ Write this page to order 'I. M. Printed by Zhengong Consumer Cooperative, Central Gradient Bureau of the Ministry of Economic Affairs *. 424 003 ^ A7 _ _B7_ V. Description of the invention (β ). This test uses M to determine a useful speed / concentration slope at a representative endpoint. The first test is for an HF / HNO3 / HAc volume ratio close to 6: 1: 5 and the second test is for close to 3: 1: 2 volume ratio. The three acids used (weight X) are: HF 43X; nitric acid 70%; and acetic acid is 99.53. In each case, it is observed that the speed of sound will increase with the addition of nitric acid. Increase and decrease with the addition of acetic acid. Preliminary verification results with 6: 1: 5 mixture The results obtained with 6: 1: 5 mixture are as follows: Please read the precautions on the back first and write this page) Central Standards Bureau, Shellfish Consumer Cooperative, printed Cum. Δ Vacou temperature Ό 110Όliter HF 1327.76 22.20 + 10 奄 hno3 10 nit 1338.49 2 2.45 + 7.3 liters 1 ^ 〇3 17.3 nit 1345.60 22.58 + 1 ml of HN〇3 18.3 nit 1346.21 22.61 + 0.9 ml of HNO3 19.2 nit 1346.81 22.65 -17- The size of the paper is distant from the Chinese National Standard (CNS) Α4. Grid (210X297 mm) 2.4 00 3 , # A7 B7 V. Description of the invention (π This result shows the first stage of a precisely controlled mixed semiconducting hafnium-grade chemical. The plot 2A is a plot derived from this data, showing The relationship between the speed of sound and the degree of sound. As shown by the data, the speed of sound provides a good one-dimensional measure of the degree of sound for mixtures in this range. The product thus produced is then used in the second mixing stage in which the first Three ingredients: Please read the first note of h. Printed by the Central Kneading Department of the Ministry of Ammonium and Rubber Industry Cooperatives *. Initially add Cum. △ Vacou temperature t 100 ml HF: HN〇3 1346.81 + 30 ml HAc 49.2 1316.53 21.30 + 10 ml HAc 59.2 1309.OS 21.28 + 28 ml HAc 87.1 1293.95 21.00 + 3.6 HAC 90.7 1292.0Z 21.15 + 3.5 liters HAc -18- 94.2 129G.22 21.2 This paper is based on China National Standards (CNS) ) A4 specification (2 丨 0 > < 297 mm) t Page order 424 003 A7 B7 V. Description of the invention (ι &) Figure 2B is a plot derived from this data, showing the difference between the speed of sound and the degree of sound. relationship. As the data shows, the speed of sound provides good one-dimensional concentration measurements for mixtures in this range. In this way, the combination of the two flail mixing steps facilitates the accurate measurement of the three-component temperature compound concentration using a one-dimensional sensor (sound velocity sensing). Please read the back of the note on the back of the 3: 1: 2 mixture to obtain the preliminary verification results. The results obtained with the 3: 1: 2 mixture are listed below. Cum. Δ Vacou Temperature t: 120 ml of HF 1329.69 22.5 + 30 ml of NONO3 30 nit 1355.39 27.9 + 8 ml of MONO 38 38 1361.08 22.95 + 2 ml of NONO 3 40 1362.46 22.93 + 2 ml of NONO3 42 1363.84 22.93 Paper size: China National Standard (CNS) A4 specification (210 × 297 mm) 424003 A7 B7 V. Description of the invention (| Γ1)] _ 1 I__ | _I__i This result shows the first of the precision controlled mixed semiconductor-grade chemicals stage. Figure 2C is a plot derived from this data, showing the relationship between speed of sound and concentration. As shown in this data, the speed of sound provides a good one-dimensional measurement of the mixture for mixtures in this range. The product thus produced is used in the second mixing stage, in which the third component is mixed: the central consumer sample bureau of the Ministry of Economic Affairs, the consumer co-operative printing, initially added Cun. Δ Vacou temperature υ 100 ml 3: 1 HF + HN03 + 30 ml HAc 72 1320.09 21.1 + 18 ml HAc 89.6 1315.18 20.88 + 2.5 ml BAc 92 1313.31 20.95 + 2.5 ml HAc 94.6 1311.6 21 -20- (please read the note on the back of the page to fill in this page) 1 y pack 'f Seven items Γ: Manually write the Taipa paper standard (CNS) A4 size (210X297 mm) 424 0034¾ at B7 V. Description of the invention ("?" Draw 2D is a standard drawing derived from this data.顬 shows the relationship between the speed of sound and the density. As the data shows, the speed of sound provides a good one-dimensional concentration test for mixtures in this range. The combination of these two sequential mixing steps can facilitate the accurate measurement of the three-component mixture using a one-dimensional sensor (Sonic Speed Sensing). Test sensitivity The slope of each key map at the concentration range considered is listed in the table below. Each slope is significantly larger than required by Hodel 88's 0.1 m / s repeatability specification. Slope nitric acid for 6: 1: 5 product ... ml = 1. 165 (meters / second per -1 serving) acetic acid for 6: 1: 5 product ... 0) 2 =-3. 6 5 5 (M / s per-parts) nitric acid for 3: 1: 2 products ... m3 = 2 76 (m / s per-parts for acrylic acid) for 3: 1: 2 products ... b4 = -3 58 (meters / second per -1- servings) (please read the note on the back of the page to write this page). Binding and printing by the Central Standard Industrial and Consumer Cooperatives of the Ministry of Economic Affairs. Although there is no direct measurement of reaction heat data, However, the observed maximum temperature rise was about 0.4 ° F. The reaction heat is not expected to be an important factor. (Note: The typical acidic temperature coefficient proposed by Hass Labs for Model 8 8 is 2 to 4 meters / second / * 0). Although the heat of reaction is small, the temperature adjustment capability is still required in the installed unit. Cargo Example 2 21- This paper size applies to the Chinese national standard {CNS} Α4 size (2 丨 0X297mm) 2 4 Wuli Jinji Central Bureau of Zhuanzhou Bureau Shellfish Consumer Cooperatives print π 丨 3 α Α7 Β7 Description of the invention ( β) The second tri-component system used in the treatment of semi-corpus callosum is Jingyuan hydrofluoric acid of various dilutions. In this system, the ingredients used are aqueous HF * NIU F, and ultra-pure (DI) water. In this case, both HF water soluble ammonium hydroxide and ammonium fluoride aqueous solution are preferred. They are produced at the semiconductor manufacturing facility. 1 Use the temporary profit application number filed on July 7, 1995. 08/4 Systems and methods described in 39,562 • This patent application is hereby incorporated by reference in this example. Ultrapure gaseous HF is first prepared, and then ultra-blunt HF water-soluble radon is produced (as measured by sound velocity sensing. Degrees or, for several types of dilute solvents, to degrees measured by the conductivity measurement. In addition, ultra-pure gas ammonia * is generated, and then the gas ammonia is blown into the ultra-pure aqueous solution, which is performed under the control of the output of the one-dimensional sensor * to produce yuan HF with a desired strength. In this way, the sequential step-by-step soft coupling of two consecutive mines again provides precise control of the three-component mixture. Individual steps in this process will be explained in more detail here. Specifically, in this embodiment, all of these steps are performed on-site at the semiconductor manufacturing facility. Purification of NH3 According to the present invention, ammonia vapor is pseudo-extracted from the vapor space of the liquid ammonia supply reservoir. K This method of extracting steam can be used as a first stage distillation | leaving some solid and high boiling impurities in the tired phase. The supply reservoir may be any conventional supply eaves or other reservoir suitable for containing ammonia *, and the ammonia may be in an anhydrous form or in the form of an aqueous solution. The aging device can be maintained at atmospheric pressure or if necessary. -22- This paper can be used by the Chinese National Standard (CNS > A4 Washing (210X297 mm)) Printed by the Male Workers Consumer Cooperatives of the Central Bureau of the Ministry of Economic Affairs ¾ 4: 24 003 ^ a7 B7 Γ,, V. Description of the invention (>) It is maintained at a pressure higher than atmospheric pressure to enhance the ammonia flow through the system. The reservoir is preferably controlled by a thermal controller * so that its temperature is at About 1G ° to about 50 °, preferably about 15 ° to about 3510 * and most preferably about 20 ° to about 25C. As a result of ammonia extraction from the vapor phase, the impurities that can be removed include the cycle Tables Group 1 and Group I gold ions and the amination forms of some metal ions caused by contact with ammonia. In addition, oxides and carbonates of these metal ions, M and hydrides such as Samarium hydride and magnesium hydride; Group B elements and their oxides, and ammonium adducts of hydrides and halides of these elements; transition metal rhenium hydrides; and heavy hydrocarbons and halogenated carbon compounds such as pump oil ) 〇 Ammonia extracted from the reservoir is passed through a filter element M to remove any solids entrained by the vapor .Microfiltration and ultrafiltration units and membranes are available on the market and can be used by users. The quality and type of the filter are selected according to needs. This preferred embodiment uses a coarse filter, followed by the ion A 0.1 micron filter was used before the purifier and it was not purged after the ion purifier. Then the purged steam was passed to a scrubber * where high-purity pure water (preferably de-ionized water) was used. To wash the steam. The high pH water is preferably ammonia water, and the degree of saturation is increased to saturation through the scrubber through the scrubber. The scrubber can be conveniently countercurrently used like a conventional scrubber tower Operation. Although the operating temperature is not a keying factor, but the tower is preferably operated at a temperature of about 10 ° to about 50 * 0, and more preferably about 15 ° to about 35TC. Similarly, the operation of 23- Standards are applicable to Chinese families (CNS > A4 specifications (2 丨 0X297mm) Please read the notes on the back-r > 4- > write this page) Printed by consumer cooperatives Α7 Β7 V. Description of invention (> 丨) Pressure is not relevant * The best practice is to operate at a pressure of about atmospheric pressure to about 30 p si above atmospheric pressure. The tower is typically loaded with conventional tower packing to provide a high level of fatigue-gas contact * and preferably also includes A dehumidification section. In a preferred embodiment of the present invention, the tower has a filling height of about 3 feet (0.9 泶) and an inner diameter of about 7 inches (18 cm), and reaches 0.84 cubic feet (24 liters). Fill volume, and it operates at a pressure drop of about 0.30 water column (0.075KPa) and an overflow rate of 10 X * its nominal circulating flow rate is about 2.5 gallons per minute (0 · 16 liters / second) Or 5 gallons per minute (0.32 liters / second) at a 2 ×× overflow rate. * Its gas inlet is lower than the packed bed, and its tired population is higher than the packed bed but lower than the dehumidification section. A more suitable packing for a tower with such a description is one having a nominal size smaller than one eighth of the diameter of the tower. The tower's dehumidification section has a similar or denser packing * other aspects are customary builders. All descriptions and dimensions in this paragraph must be understood only as examples. Every system parameter can be different. In a typical operation, the start-up step is to first use ammonia to saturate deionized water to form a medium for the initial scrubbing medium. During the scrubber operation, a small amount of liquid in the tower sink should be periodically discharged to remove accumulated impurities. Examples of impurities that can be removed by scrubbers include reactive volatiles such as silane (SiH4) and arsenic (AsH3) phosphorus, halides and hydrides of arsenic and antimony; general transition gold halides; and Kth Halides and hydrides of Group VII and Group VI gold dysprosium. The military army described above can be used in batches * in a buried or semi-continuous manner. -24- Standard for paper-based methods. Standards for use in the midst of difficulties (CNS > Α4 specifications (2 丨 0 > < 297 mm) (Please read the note f4 on the back page of the back page first) _ .¾. ^ 'Ϊ́ν Π Socket lamp A7 424 003 __B7_ V. Description of the invention (θ). M ores or semi-continuous operations are more suitable. Ammonia The volume processing rate of the purification system is not critical and can vary widely. However, in most operations that can be expected to be used in the present invention, the ammonia flow rate through the system is about 200 cubic centimeters per hour to In the range of thousands of liters / hour. As needed, ammonia leaving the scrubber can be further purified before use, depending on the type of special manufacturing method used to purify the ammonia. When the ammonia is intended to be used, for example, in chemical vapor deposition * It is advantageous to add a dehydration unit and a distillation unit to the system. The distillation column can also be operated in batch, continuous ore, or semi-buried mode. "In batch operation • Typical operating pressure is 300 psi / absolute Value (2,0680 & >, batch size is 100 lbs (45.4 kg). The tower in this example has a diameter of 8 hours (20 cm), a height of 72 inches (183 cm) * K 3G2 overflow rate operation, and a steam velocity of 0.02 1 foot / second (0.00 0 0 6 7 m / S) · The theoretical equivalent plate height is 1.5 inches, and it has 4 8 equivalent plates. The boiler size in this example is approximately 18 hours (45. 7 cm) in diameter and 27 hours (68. 6 cm) in length. The ratio is 0.5, and its circulating cooling water enters at 60T (15.61C) and flows out at 90T (32.2υ). Again, this is only an example; a distillation column with a wide range of structural and operating parameters can be used. Central Ministry of Economic Affairs Rubin Bureau ’s consumer cooperation with Du Yin It depends on its path. Purified ammonia can be used in the form of a purified gas or an aqueous solution with or without a distillation step. In the case of an aqueous solution, the purified Ammonia is dissolved in purified water (preferably deionized water). The mixing ratio and the mixing tool are customary. Circle 1 shows a rolling stroke B depicting an embodiment of the ammonia passivation unit according to the present invention. Liquid ammonia It is stored in the reservoir 11. The vapor space in the container -25- S furniture standard (CNS) A4 specification (210X2 ~ 7mm) 4 24 00 3 A7 B7 Printed by the Shell Cooperative Consumer Cooperative of the Central Rubbing Bureau of the Ministry of Economic Affairs 5. Description of the invention) After the ammonia vapor is extracted, t is closed by a sight. The valve 13 is then passed through a 'm' device. The ammonia vapour passed through it is controlled by a pressure regulator 16 which then waits for a scrubbing tower Π which contains a filling section 18 and a dehumidifying pad 1 £ When the ammonia vapor flows upwards, the saturated ammonia water 2 is flowing downwards. • The liquid system rri is circulated by the circulation pump 21 and its fatigue level is controlled by the level sensor 22. The waste liquid 23 is from the bottom of the scrubber. The liquid held in the pump is periodically extracted. Deionized water 24 is supplied to the aerator 17 under the pressure maintained by the pump 25. The scrubbed ammonia 26 is guided to one of three alternative ways. These two paths are: ⑴ distillation column 27 in which ammonia is further washed m 0 The resulting distilled ammonia 28 is directed to the point of use 0 ⑵ dissolution unit 29 * where ammonia is combined with deionized water 30 to form an aqueous solution 31 which is directed to the point of use 〇 For I plant operations with multiple points of use, the aqueous solution can be used Collected into the holding tank * Then, the ammonia oil is taken into individual pipelines for use by many end users in the same factory. ⑶ Conveying line 32 1 The ammonia in the form of gas is delivered to the point of use. Neither the second nor the third of these alternatives requires a distillation column 27 9 and is therefore suitable for the preparation of ammonia containing less than 100 parts per trillion of any metallic impurities. It is more suitable. Examples are ammonia furnace use or chemical vapor sinking (C VD) use. C If ammonia is used * For example, in the case of t CVD, distillation towers can remove non-condensable substances such as oxygen that can dry-cast CVD. And nitrogen 0 In addition * As the ammonia system leaving the aerator 17 is saturated with water, it depends on the characteristics and efficiency of the distillation column as needed 1 Available at 26-Please read the note on the back of this page Home Standard (〇 呢) 8 4 specifications (210 father 297 mm) Printed by the Consumers' Cooperatives of the Central Government Bureau of the Ministry of Economic Affairs «. 4 24 00 3 1 A7 _B7__ 5. Description of the invention (#) A dehydration unit is installed between the vessel 17 and the distillation column 27. When using any of these alternative routes, the resulting stream 1 can be divided into two or more tributaries regardless of whether it is gaseous ammonia or an aqueous solution. * Each channel is directed to a different use station * so that the purification unit can Purified ammonia is simultaneously supplied to many use stations. HF passivation B 4 shows an on-site H F purifier according to one embodiment of the creation shown in this specification. The starting material is preferably high purity 49XHF which is substantially free of arsenic. Lower arsenic species are available from Allied Chenical. The HF program flow includes an evaporation (and arsenic removal) stage, a fractionation column M removes most of the other impurities, an ion purifier column K withholds impurities that are not removed by the splitter column *, and the final HF supply. (HFS). Optionally, a batch program for arsenic removal can be combined with an evaporator. In this application, arsenic is converted to the +5 state and is kept in evaporation by adding oxidant UMn〇4 or (NH4) z S2 〇8) and a cation source such as KHFz Μ in the distillation process. Device. This is a batch procedure because the reaction is slow and sufficient time must be allowed to elapse before the distillation is complete. This procedure requires about one hour of contact time at the box at the nominal temperature. In order to achieve a complete response in a continuous process, high temperatures and pressures (which are not good for safety) or very large vessels and lines are required. In this procedure * pseudo-lead HF into a batch-type evaporator container * stir for a suitable reaction time while treating the chamber with an oxidant. -27- The standard of this paper is Chinese national standard (CNS > A4 size (210X297 mm) (please read the precautions on the back first) to write this page) Du Yin, the Bureau ’s work-consumer cooperation, Du Yin «. Α7 Β7 V. Description of the invention (A) Then HF is led to a fractionation column and refluxed to remove most of the gold impurities. In this step, it is shown that the amount of gold is reduced. Elements include: Group 1 (1) Na Group 2 (11) Ca, Sr, Ba Group 3-12 (IIIA-IIA) CΓ, W. Ho. Μ η, Fe, Cu, Zn η 13 {III ) Group Ca Group 14 (IV) Sn. Pb. And Group 15 (VII) Sb. This fractionation column has a series of single passivation distillation functions; it uses a column filled with high surface area materials to convect the exhaustion. The method is carried out so that there is a complete balance between the falling fatigue and the rising vapor. Only a fake part of the condenser K is installed in this tower to provide the drawing flow and the passivated gaseous HF is subsequently led to HF IP water purifier (HF IP). At this stage, the HFM is generally pure, but may contain arsenic treatment chemicals or quenching agents (qu ench). HF IP is used as an additional purity guarantor before the HF gas is deflated into the supply system. Some elements may be present in the processing solution or in the IP to absorb the sulfates entrained by the HF gas stream. IP tests have shown that the following elements have a significant reduction in HF gas stream impurities: Groups 2 (I) Sr and Ba, Groups 6-12 (VIA-IIA) Groups Cr, W, and Cu,

第13(1 )族 B 第 14UV)族 Pb, Sn,及 -28- 本紙浪尺度適用中圃固家標準(CNS ) A4規格(2丨0乂297公釐) -------^----.-------ύ--------ΙΤ------“-----:---:-- (锖先Μ.讀背面之注意事項r"'',i窝本頁) 424003 Α7 Β7 經濟部中央揉率局貝工消费合作杜印氧 五、發明説明(d) 第 15(v)族 Sb。 這些元素中有許多種可用來進行砷污染的抑止。因其在As 處理中的超量所致在蒸皤塔中的任何夾帶都可在此步驟中 予Μ矯正。 缓街HF的產生 圔3Α顯示出將超純氨導到氬氟酸中製成锾衡HF所用的 產生單元中之程序流縱覽*而圖3Β1-3Β3則顯示出圖3Α所示 程序流一實施例的詳细Ρ & ID圖。 其中的一項重要特徴為某些金臛雜質(如,Fe和 Ni) 比HF更慢從蒸氣流溶出。所Μ要使用兩階段程序,於其中 某些雜質係溶在第一滌氣器中*而第二滌氣器係Κ約105¾ 的飽和度操作,使得這些”輕”雜質從塔頂逸出。如此該 第二滌氣器即產生高純度的氫氟酸。 於本發明較佳實施例中,氨鈍化器的液體容積為10升 ,而最大氣體流速約為10標準升/分。滌氣疲體係K足K 在2 4小時内至少更換一次之流速沖人一連續地或逐増量地 產物濃度(於兩個產生步揉)係使用音速測置設備( 得自Mesa Labs)測量的不過也可Μ用導電係數,密度,析 射率*或IR光譜術取代而進行測量。 要開始進行該程序時必須決定要溶在水中的缌H F和HH 3之塘度。例如,1公斤4 0重量X的氟化銨溶液含有4Q0克的 本紙張尺度逋用中國國家標隼(CNS ) A4说格(210X297公釐) I----^---^----i-- (請先閲讀背面之注$^^4~寫本頁) ---訂 1/ A7 B7 五、發明説明(糾) 請 先 閲 背 之 注 NH4 F和6 00克的超純水。由於對纯》H4 F而言· HF對NH3 的莫耳比為1:1,因此4 0 0克的NH4 F即包括216克的無水HF 和 184克的無水 NH3 。(MW NH4 F= 37, MW HF = 20,MW 〇3 =17)〇 在H F形成循環完畢時,有21 6克的H F溶在600克水中或 為26. 5重霣ί。線上儀器會促使添加HF到其濃度。另外•也 可Κ將49UF稀釋到此澹度。 在26.5XHF溶液已形成後即加人189克HH3以形成4 0ΧΝΗ 4 F溶疲。 對於不同懕用所需的其他澹度和莫耳比例也可Κ經由 調整濃度儀器控制而設定。 晶圓清潔 經濟部中央揉準局工消費合作社印«. II 2繪出在傳統半導題製造媒中的某些清潔站。清潔媒 中的第一個單元為光阻曆剝除站(resist stripping 8上31^〇11)41,於其中將過氧化氫42和疏酸4 3組合並腌加到 半導骽表面以剝除光姐層。其後接Μ冲洗站44於該處用去 雜子水冲洗掉剝除溶液。緊接在冲洗站44的下游者為淸潔 站45·於該處施加氨水溶液和過氧化氫水溶疲,此溶疲係 Μ兩種方式之一供給。於第一種方式中,係將氨水溶液31 與過氧化氫水溶疲4 6姐合,並將所得混合物4 7導到清潔站 45 。於第二種方式中*係將鈍氣通氨32冒泡通入過氧化氳 水溶疲48中產生類似的混合物4S·其同樣地専到清潔站45 30 本紙張尺度適用中國S家標準(CNS >八4此格(210Χ297公釐) 424003 A7 B7 五、發明説明(J) 請 先 閲 背 之 注 意 | ί 本 1 處。在用氨/過氧化氫组合物清潔後*即將半導體通到第 二冲洗站50,於該處施加去雛子水Μ去除清潔溶液。下一 站為另一清潔站54 ,於該處將鹽酸水溶菝55和過氧化 氫56姐合並施用到半導體表面進一步清潔。其後接著一 最後冲洗站57 *於該處施加去離子水Κ脫除HC1和ΗΖ 0 2 。於去釉站59處,將稀媛衝HF施加到晶圃(以去 除固有的或其他的氧化物膜)。該稀鑀街氫氟酸係從產生 器70經由密封管件直接供給的。如上文所述者•儲器72 係裝著無水HF ,從該處將氣體吓^袷遏離子純化器7 1到 產生器7〇之内。較佳者也將氣體毒f浥通到產生器之 内以製備成媛衝溶液*且加入超純去離子水Μ達到所欲稀 釋度。其後接著在超鈍去離子水中冲洗(於站60處), 並在站58處乾燥。晶圓或晶圓批料61係固持在晶圓支持 架52上,且從一工作站Μ機械人63或某種其他習用的達 到依序處理之工具輸送到下一站。該輸送工具可為完全自 動者,部份自動者或根本不自動者。 經濟部中央標率局貝工消费合作社印装 圖2所示糸統恰為半導體製造用的清潔線之一例子,一 般而言,高精密製造用的清潔媒可能與圖2中所示者有廣大 的變異,可能消除掉一或多個所示單元或添加或減除沒有 示出的單元。不過,根據本發明*高純度氨水溶液現場製 備的概念可應用於所有彼等系統。 在如圖2所示清潔站4 5之工作站使用氨和遇氧化氫作為 半導鱧清潔介質係工菜界中熟知者。雖然其比例會變異, -3 1 本紙張X度逋用中國國家捸準(CNS > Α4规格(210 X 297公釐) 經濟部中央標率局負工消费合作社印装 五、發明説明(y) 不過一標稱系统包含去離子水,23J;氫氧化銨(重壘基準) 和30 3:過氧化氫(重量基準),以6:1:1的體積比例姐合而 成。此清潔劑係用來脫除有機殘渣*且*配合Μ約1MHz的 頻率之超S波搜動,可以脫除小到次微米尺寸範圍的粒子 Ο 於一類實胨例中,纯化(或純化及產生)糸铳係配置 在生產線中密切靠近超純化學品使用點之處•於肫化單元 和生產線之間只留下一短移行距離。另外,對於有多使用 黏之工廠•來自鈍化(或鈍化及產生)單元的超鈍化學品 可K通過一中間儲楢後再到達使用點。每一使用點即從該 中間儲槽K個別的輸出線給入。於任一情況中*超純化學 不學到系或兩該雜中氟 水 外化碰化张到中入用或 的 之當會纯 數送況 等應烯 用 器到般開為件情會份乙 所 儲觸一離常管此不部聚 内 内接時品通用於用大度 元 線會備學離使,由於密 軍 型不製化距統大經。高 , 小就和鈍的系為可到如 故 了此造超間式更送達例 之 除如製,之廠齬輸來物 近 且-處中點工距其線合 靠 輸質之例用央該。管聚 的 運基面施使中-者送或 媒 或體外實的一時大輸網 產 裝導施類上為之更淨锈 生 包半設此線統者或乾不 對 需加造於產糸站呎超用 元 不施製。生化用千之使 單 K 接體源在纯使兩成地 化 可直導染其當個為製功。純 而而半污與。多能料成物於 因存在在點者更可材K合由 皆貯係潛的矩或離的可聚 品需品的铳更個距質,化 本紙張尺度逍用中國國家樣率(CNS > Μ規格(2丨0><297公釐) 003 Α7 鳗濟部中央標準f工消费合作社印*. __Β7_五、發明説明㈠。) 可K根據半専髖製造準予Μ純化。這些標準半導體工業中 所普遍使用者且為諳於此技並對於工業操作和標準有遝驗 者所熟知者。根據疸些標準來純化水的方法包括離子交換 和逆滲透。離子交換方法典型地包括大部份或全部的下列 簞元:化學處理例如加氯處理Κ殺死生物體;砂濾Μ去除 粒子;活性碳過溏以去除氣和微量有機物質;矽額土過濾 ;陰睡子交換以脫除強游離酸:混合床磨光Uixed bed polishing),同時含有陽離子和陰離子兩種交換樹脂K脫 除其他的離子;滅菌*包括加氯處理或紫外光;及用0.45 微米或更小的濾器過逋。1撰透方法包括,取代離子交換 * 程序中的一或多個單元者,將水於壓力下通過一選擇性渎 透膜,該膜不會讓許多種溶解或懸浮的物質通過。從逭方 法所得水的典型纯度標準為在251C至少約15百萬歐姆一厘 米Uegohi-c·)的電阻偽數(典型者在25*0下18百萬歐姆 —厘米)*低於約25ppb的電解質,少於約150 /立方厘米的 粒子含量及小於0.2微米的粒子尺寸*少於約10/立方厘米 的撖生物含量,及少於1〇〇 PPb的缌有機碳。 於本發明方法和系統中,對於產物澹度因而流速的高 度控制係經由使用已知的設備和儀器予K精確的監測和計 童而達到的。逹到此的一種方便手段為音_感測。其他方 法係諸於此技者易於明白者。必要時可Μ對濃度控制垣路 進行各種修改(使用専電係數等取代音速)。 -33- 本紙張尺度逋用中國因家標準(CNS ) Α4規格(210Χ297公嫠) (請先閲讀背面之注意事項寫本頁 裝_ 訂 ο 經濟部中央揉率局貝工消费合作社印策 ^ 2 Λ Ο 0 3 Α7 Β7 五、發明説明(μ ) 修改和變異 如諸於此技者所公認者*本申請案中所述的創新槪念 可針對巨大的應用範圍予Μ修改和變異,因此*本發明的 專利主訴範圍不限於本文所給的任何特殊範例掲示。 例如,如諸於此技者所顯而知悉者*所揭示的概念可 经調遘而用於超純化學品的半連縝或埋續式就地琨合。 就另一例子而言·所撂示的創新技術不嚴格限制於積 賭電路的製造,而也可Κ用來製造個別的f導體g件*例 如光電裝置和動力裝置。 又就另一例子而言*所揭示的創新技術也可以適用於 巳採用積體電路製造方法的其他技術製造,例如薄膜磁頭 和活性基質液晶顯示;不過其基本應用係在積體霣路製造 ,而所堪示的技術對其他領域的應用係次要的。 此外也必須特別提及者,在半導體前端中導引超纯化 學品所用的管件可包括媒内儲器或加壓儲器。因此在申請 專利範圍中所稱的”直接”管件並不排除彼等儲器的使用 *不過確實排除對未經控制的大氣之暴露。 另外必須特別提及者,本發明不嚴格限制於只有—個 感測器之使用。例如*本發明較佳實施例所用的音速感測 具有缺點,亦即*對於非常稀HF溶液(在1¾附近者)•感 測器输出與湄度之間不具有一對一的關係。所K在本發明 較佳實施例中係使用導電係數測量來控制最後到最高稀釋 度的BF稀釋。 "3 4 _ 本纸張尺度逍用中國國家標丰(CNS ) A4規格(210X297公釐) (請先閲•讀背面之注意事項寫本頁) 訂.Group 13 (1) B Group 14UV) Groups Pb, Sn, and -28- This paper wave standard is applicable to the China National Standard for Household Standards (CNS) A4 (2 丨 0 乂 297 mm) ------- ^ ----.------- ύ -------- ΙΤ ------ "-----: ---:-(锖 先 Μ. Read the back of the note Matters r " '', i nest page) 424003 Α7 Β7 Shellfish Consumption Cooperation of the Central Ministry of Economic Affairs of the People ’s Republic of China Du Yinxian 5. Description of the Invention (d) Group 15 (v) Sb. Many of these elements can be used to Suppression of arsenic pollution. Any entrainment in the steaming tower due to its excess in As treatment can be corrected in this step. The production of slow street HF, 3A, shows that ultrapure ammonia is conducted to An overview of the program flow in the generation unit used to make HF in argonfluoric acid * and Figures 3B1-3B3 show detailed P & ID diagrams of an embodiment of the program flow shown in Figure 3A. One of these is important This is because some gold impurities (such as Fe and Ni) dissolve out of the vapor stream more slowly than HF. Therefore, a two-stage procedure is used, in which some impurities are dissolved in the first scrubber * and the second The saturation operation of the gas system is about 105¾, so that these "light" impurities escape from the top of the tower In this way, the second scrubber produces high-purity hydrofluoric acid. In the preferred embodiment of the present invention, the liquid volume of the ammonia passivator is 10 liters, and the maximum gas flow rate is about 10 standard liters / minute. Fatigue system K foot K The flow rate is changed at least once in 24 hours. The product concentration (continuously or in batches) (measured in two production steps) is measured using a sound velocity measuring device (obtained from Mesa Labs). Measurements can be performed by replacing conductivity, density, emissivity *, or IR spectroscopy. To begin the procedure, you must determine the degree of thallium HF and HH 3 to be dissolved in water. For example, 1 kg 40 weight The ammonium fluoride solution of X contains 4Q0 grams of this paper size, using the Chinese National Standard (CNS) A4 grid (210X297 mm) I ---- ^ --- ^ ---- i-- (please first Read the note on the back $ ^^ 4 ~ Write this page) --- Order 1 / A7 B7 V. Description of the invention (correction) Please read the note on the back of NH4 F and 600 g of ultrapure water. In terms of F, the molar ratio of HF to NH3 is 1: 1, so 400 grams of NH4 F includes 216 grams of anhydrous HF and 184 grams of anhydrous NH3. (MW NH4 F = 37, MW HF = 20 MW 〇3 = 17) 〇 At the end of the HF formation cycle, 21 16 grams of HF are dissolved in 600 grams of water or 26.5 weight. The online instrument will promote the addition of HF to its concentration. In addition, you can also 49UF was diluted to this level. After the 26.5XHF solution had been formed, 189 grams of HH3 was added to form 40XΝΗ4F. Other degrees and mole ratios required for different applications can also be set by adjusting the concentration instrument control. Wafer cleaning. The central government's stamp printed by the Ministry of Economic Affairs and Consumer Cooperatives «. II 2 shows some cleaning stations in traditional semi-lead manufacturing media. The first unit in the cleaning medium is a photoresist stripping station (31 ^ 〇11 on 41) 41, in which hydrogen peroxide 42 and sparse acid 4 3 are combined and marinated on the surface of the semiconductor to peel In addition to the light sister layer. Thereafter, the rinsing station 44 is connected there to rinse off the stripping solution with deionized water. Immediately downstream of the flushing station 44 is Jijie Station 45. An ammonia solution and a hydrogen peroxide solution are applied there to dissolve the dissolution. This dissolution is supplied in one of two ways. In the first method, the ammonia solution 31 is dissolved with hydrogen peroxide solution 46, and the resulting mixture 4 7 is led to a cleaning station 45. In the second method, * a blunt gas is passed through the ammonia 32 into the peroxide, the water is dissolved in the water 48, and a similar mixture 4S is produced. It is similarly swollen to the cleaning station 45 30. This paper size applies the Chinese S standard > 8 this grid (210 × 297 mm) 424003 A7 B7 V. Description of the invention (J) Please read the note of the back first | ί Section 1. After cleaning with ammonia / hydrogen peroxide composition The second washing station 50 is used to remove the cleaning solution at the place where the young child water M is applied. The next station is another cleaning station 54 where the water-soluble hydrochloric acid 55 and the hydrogen peroxide 56 are applied to the semiconductor surface for further cleaning. This is followed by a final rinse station 57 * where deionized water K is applied to remove HC1 and ΗZ 0 2. At deglaze station 59, thin Yuanchong HF is applied to the crystal garden (to remove inherent or other oxides) Membrane). The dilute hydrofluoric acid is directly supplied from the generator 70 through a sealed tube. As described above • The reservoir 72 is equipped with anhydrous HF, and the gas is scarred from there. Ion purifier 7 1 to the generator 70. The better one also passes the gas poison f to the generator Prepare the Chengyuan Chong solution * and add ultrapure deionized water M to the desired dilution. Then rinse in ultra-blunt deionized water (at station 60) and dry at station 58. Wafer or crystal The round batch 61 is held on a wafer support frame 52 and is transported from a workstation M robot 63 or some other conventionally used tool to achieve sequential processing to the next station. The transport tool can be fully automatic. Partially automated or not at all. Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, the system shown in Figure 2 is just one example of a cleaning line for semiconductor manufacturing. Generally speaking, high-precision manufacturing cleaning media There may be a wide variation from the one shown in Figure 2, it may be possible to eliminate one or more of the units shown or to add or remove units that are not shown. However, the concept of on-site preparation of a high-purity ammonia solution according to the present invention may be applied In all of their systems. As shown in Figure 2, the workstations of the cleaning station 4 5 using ammonia and hydrogen peroxide as semiconducting cleaning media are well-known in the industry. Although the proportion will vary, -3 1 paper X China National Standards CNS > Α4 size (210 X 297 mm) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Printed by the Consumers Cooperative, V. Description of the invention (y) However, a nominal system contains deionized water, 23J; ammonium hydroxide (weight barrier benchmark) ) And 30 3: Hydrogen peroxide (weight basis), which is a 6: 1: 1 volume ratio. This cleaner is used to remove organic residues * and * with a super S wave at a frequency of about 1MHz. Search and remove particles in the sub-micron size range. In one example, purification (or purification and production) is located in the production line close to the point of use of ultra-pure chemicals. Only a short travel distance is left between the unit and the production line. In addition, for factories that have many uses, ultra-blunt chemicals from passivation (or passivation and production) units can pass through an intermediate storage and then reach the point of use. Each use point is fed from an individual output line of the intermediate storage tank K. In either case, you ca n’t learn the Department of Ultrapurity or the external fluorinated water in the hybrid. If you use it in the middle, you can send it in pure numbers, and so on. The application should be opened as usual. The storage of Fen Yi's storehouse is often used to control the internal connection of this unit, and the product is generally used to use the high-end element line to prepare for dismissal. Due to the dense army type, the distance is large. The high, small, and blunt systems are the exceptions that can be made to the super-intermediate service example. The factory has imported materials that are close and the mid-point distance from its line depends on the quality of the transmission. That. The transportation base of the management will be used to send the medium or the medium or the external real-time large-scale transmission network production equipment to the guide to make it more clean and rusty. If you set up this line system or not, you need to add to the production. Standing feet are not controlled by yuan. Biochemical uses a single source of K-adapter to make 20% of the land purely, which can directly guide it as a system of work. Pure and semi-sully. Pluripotent materials can be made into materials that are more suitable because of the presence of points. They can be stored in a moment or separated by aggregating necessities, which can be used to change the quality of the paper. Use the Chinese national sample rate (CNS) > Μ specifications (2 丨 0 > < 297 mm) 003 Α7 A standard printed by the Ministry of Economic Affairs, Central Laboratories and Consumer Cooperatives *. __Β7_ V. Description of the invention. These standards are commonly used in the semiconductor industry and are well known to those skilled in the art and skilled in industrial operations and standards. Methods for purifying water according to some criteria include ion exchange and reverse osmosis. Ion exchange methods typically include most or all of the following: chemical treatments such as chlorination to kill organisms; sand filtration to remove particles; activated carbon to remove gas and trace organic matter; silica frontier filtration ; Sleepy son exchange to remove strong free acid: mixed bed polishing), which contains both cation and anion exchange resin K to remove other ions; sterilization * including chlorine treatment or ultraviolet light; and 0.45 Filters of micron or smaller size are too thin. 1 Permeation methods include replacing one or more of the units in the ion exchange * process by passing water under pressure through a selective membrane that does not allow many dissolved or suspended substances to pass through. The typical purity standard for water obtained from the tritium method is at least about 15 million ohms per centimeter Uegohi-c ·) at 251C. The pseudo number of resistance (typically 18 million ohm-cm at 25 * 0) * is less than about 25 ppb. Electrolyte, particle content of less than about 150 / cubic centimeter and particle size of less than 0.2 micron * tritium biological content of less than about 10 / cubic centimeter, and tritium organic carbon of less than 100 PPb. In the method and system of the present invention, the high degree of control over the degree of product and therefore the flow rate is achieved through the use of known equipment and instruments for accurate monitoring and child counting. A convenient means to this end is tone detection. Other methods are in the hands of those skilled in the art. If necessary, various modifications can be made to the concentration control path (using the coefficient of energy, etc. instead of the speed of sound). -33- This paper uses China Standards (CNS) Α4 size (210 × 297 cm) (Please read the precautions on the back to write this page. _ Order ο The Central Government of the Ministry of Economic Affairs Bureau of the Bayer Consumer Cooperatives printed policy ^ 2 Λ Ο 0 3 Α7 Β7 V. Description of the Invention (μ) Modifications and Variations As recognized by those skilled in the art * The innovative ideas described in this application can be modified and mutated for large applications, so * The scope of the patent complaint of the present invention is not limited to any special examples given herein. For example, as apparent to those skilled in the art * The concepts disclosed can be adapted for the semi-continuous use of ultra-pure chemicals In another example, the innovative technology shown is not strictly limited to the manufacture of jackpot circuits, but can also be used to manufacture individual f-conductor parts * such as photovoltaic devices And power device. As another example, the disclosed innovative technology can also be applied to other technologies using integrated circuit manufacturing methods, such as thin-film magnetic heads and active matrix liquid crystal displays; however, its basic application is in integrated circuits. Made in Kushiro, The technology shown is secondary to applications in other fields. In addition, it must also be mentioned in particular that the tubing used to guide ultra-pure chemicals in the semiconductor front end can include an internal reservoir or a pressurized reservoir. Therefore The "direct" fittings referred to in the scope of the patent application do not exclude the use of their reservoirs * but do exclude exposure to uncontrolled atmosphere. In addition, it must be specifically mentioned that the present invention is not strictly limited to only one The use of sensors. For example * the speed of sound sensor used in the preferred embodiment of the present invention has disadvantages, that is, * for very dilute HF solutions (near 1¾) • there is no pair between the sensor output and the degree In the preferred embodiment of the present invention, the conductivity measurement is used to control the BF dilution from the final to the highest dilution. &Quot; 3 4 _ This paper size uses China National Standards (CNS) A4 specifications (210X297mm) (Please read • Read the notes on the back and write this page) Order.

Claims (1)

424 003424 003 A8 B8 C8 D8 申請專利範圍 1·一種在半導體處理設施現場產生精確的超純液體 化學品調配物之方法,其包括下列步驟: (請先閱讀背面之注意事項再填寫本頁> (a) 從第一,第二和第三諸來源K可控制方式供給 第一,第二和第三種超纯藥劑成份; (b) 混合該第一和第二純藥劑成份,其係在與可提 供一次元測量的感测器之輸出有關的控制翻係下棍合而從 其中產生具有第一精確選擇的配方之第一種超純混合物; (c) 將該第三種超純藥劑成份與該第一種超純混^ 物混合•其係在與可提供一次元測量的感測器之輸出相關 的控制闞偽下從該混合產生具有第二精確選擇的配方之第 二種超純混合物;及 (d) 將該第二種超純琨合物提供到一管件連接而將 該水溶液導到該半導體裝置製造設施中的使用點。 2 .如申請專利範圍第1項之方法,其中該第一第二 種藥劑成份皆為酸。 3 ·如申請專利範圍第1項之方法,其中該兩混合操 作皆為K密閉迴路關係經自動控制的° 經濟部智慧財產局員工消费合作社印製 4 ·如申請專利範圍第1項之方法,其中該兩混合操 作皆為Μ包括前饋依賴性的關係經自動控制的° 5 *如申請專利範圍第1項之方法’其中該感測器為 音速感浦器。 6 . —種在半導體處理設梅琨場產生精確的超純液體 化學品調配物之方法,其包括下列步驟: -1- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 42 4 0 03 A8 B8 C8 D8 夂、申請專利範圍 (請先Μ讀背面之注意事項再填寫本頁> (a) 從第一,第二和第三諸來源以可控制方式供給 第一•第二和第三種超純藥劑成份; (b) 混合該第一和第二兩種超纯藥劑成份,其係在 依賴一第一感測器的輸出之控制關係下混合而從其中產生 具有第一精確選擇的配方之第一種超純混合物; (c) 溫合該第三超純槩劑成份與該第一種超純混合 物’其係在依賴不同於該第一感測器但也提供一次元測量 的該第二感測器的輸出之控制關係下混合而從其中產生具 有第二精確選擇配方的第二種超純混合物;及 (d) 將該第二種超純混合物提供到一管路連接而將 該水溶液導到該半導體装置製造設施中的使用點。 7 ·如申請專利範圍第6項之方法,其中該第一和第 二兩種藥劑成份皆為酸。 8 ·如申請專利範圍第6項之方法,其中該兩混合操 作皆為Μ密閉涯路翮係經自動控制的。 9 «如申請專利範圍第6項之方法,其中該兩混合操 作皆為Μ包括前饋依賴性的關係經自動控制的。 經濟部智慧財產局員工消費合作社印製 1 0 ·如申請專利範圍第6項之方法,其中該感測器 為音速感測器。 1 1 ·如申請專利範圍第6項之方法,其中一該感測 器為音速感測器,且另一該感測器為導電係數測量。 1 2 ♦—種混合兩種或更多種流體的方法*其包括下 列諸步驟: -2- 本紙張尺度適用_國國家標準(CNS>A4規格(210 X 297公釐) 424 003 ' B8 C8 ___ D8 六、申請專利範圍 (a) 備好要混合的至少一第一流體和一第二流體; (b) 使該等流體滾經可使該等流體互混的工具因而 形成一琨合流體; (c )將一超聲波導引經過該混合流體;及 (d)測量透射遇該混合流體的波速,藉此顯示出該 混合流體的密度且間接地测量出該琨合流體中所含該第一 流體的量對該第二流體的量之比例。 1 3 *如申請專利範圍第1 2項之方法,其中該第一 流體為酸。 1 4 ·如申請專利範圍第1 2項之方法,其中該第二 流體為酸。 15·如申請專利範圍第12項之方法,其中該第一 和第二兩流體為酸〇 1 6 * —種現場混合系統,其係在半導體裝置製造設 施中用來提供超高純度藥劑給半導體製造操作所用者,該 糸統包拮: 第一,第二和第三來源,其經連接Μ供給第一,第二 和第三種超純槩劑成份給半導體處理所用; 一榴合裝置,其係連接到該等來源Κ接收該等超純藥 劑成份,並產生彼等的混合物; 一感測器*其經連接以監測該混合裝置所產生的成份 混合物所具姐成的,及 控制理輯*其經連接和構造成用Κ調節該等藥劑成份 -3 - 本紙張尺度適用中國國家標準(CNS>A4規格(210 X 297公釐) (請先閲讀背面之注意事項再填寫本頁) 衣-------訂--------- 經濟部智慧財產局員工消费合作社印製 1x2 ά U 〇 Α8 Β8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 進人該混合裝置内之流速,其係依賴該感測器的輸出而用 下述關係調節的:其使該混合裝置先混合該第一和第二兩 成份成為一經精確選定的調配物,然後混合該第二和第三 兩種成份成為第二種經精確選定的調配物。 1 7 .如申請專利範圍第1 6項之系統’其中該第一 和第二兩種藥劑成份皆為酸。 1 8 ·如申請專利範圍第1 6項之系統,其中該控制 遵輯包括前饋依賴性。 1 9 *如申請專利範圍第1 6項之糸統’其中該感測 器為音速感測器。 2 0 . —種現場混合系統,其係在半導體裝置製造設 施中用來提供超高鈍度藥劑給半導體製造操作所用者,該 糸統包括: 第一*第二和第三來源,其係經連接Μ供給第一,第 二和第三種超鈍藥劑成份給半導艟處理所用; 一混合裝置,其係經連接到該等來源Κ接收該等超純 藥劑成份,並產生彼等的混合物; 一感測器,其係經連接W監測該混合装置所產生的成 份混合物所具組成的;及 控制埵輯,其經連接和構造成用Κ調節該等藥劑成份 進入該混合裝置内之流速,其係依賴該感測器的輸出而呈 一關係得該棍合装置先依賴一第——次元感測器的輸出混 合該第一和第二兩種成份成為一經精確選擇的調配物,然 -4 - 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) — —It— ^--------^7_|!---^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局負工消费合作社印製 424 003 韶 ^ C8 D8 六、申請專利範圍 後依賴一第二一次元感測器的輸出混合該第二和第三兩種 成份為一第二經精確選擇的調配物。 21 ·如申請專利範圍第20項之糸統,其中該第一 和第二兩種藥劑成份皆為酸。 22 *如申請專利範圍第2 0項之系統,其中該控制 運輯包括前饋依賴性。 23 *如申請專利範圍第20項之系铳,其中該感測 器為音速感測器。 24 ♦—棰混合超純流體的糸統•其包括: (a) 第一和第二化學品調配器》該第一和第二化學 品調配器係經調適成分別裝著要混合的該第一和第二流體 t (b) —程序連接,其係裝設在該第一與第二兩化學 品調配器之間,其可譲該第一和第二滾暖流過並互混形成 混合潦髑•該程序連接更可讓該混合流髏流到操作員所爾 的位置;及 (c> 一超轚波發射裝置,該裝置係裝設在足Μ將超 聲波透射纆過該混合流體之位置處,該裝置包括測量該波 透射過該混合流體的速度之工具,其因而間接把測量出由 該混合流體中所含該第一化學品的量對該第二化學品的1 所定義之比例。 25 ·如申謫專利範圍第24項之糸統,其中該第一 和第二兩藥劑成份皆為酸。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) H n H ·Γ· * n tt n n n I « n I (請先間讀背面之注意事項再填寫本頁) Δ2Λ 0〇3 Α8 BS C8 DS 六、申請專利範圍 統 糸 之 項 4 2 第 圍 範 利-專性 請賴 申依 如饋 . 前 6 括 2 包 輯 運 制 控 該 中 其 統 系 之 項 4 2 第 圍 範 利 專 請。 申器 如測 . 感 7 速 2 音 為 器 潮 感 該 中 其 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)A8 B8 C8 D8 Patent Application Scope 1. A method for generating accurate ultra-pure liquid chemical formulations at the site of semiconductor processing facilities, which includes the following steps: (Please read the precautions on the back before filling out this page > (a) The first, second, and third sources K are supplied in a controlled manner from the first, second, and third ultrapure pharmaceutical ingredients; (b) the first and second pure pharmaceutical ingredients are mixed, and The control related to the output of the one-dimensional sensor is turned over to produce a first ultrapure mixture with the first precisely selected formula; (c) combining the third ultrapure pharmaceutical ingredient with the The first ultra-pure mixture is a second ultra-pure mixture with a second precisely selected formula from the mixture under the control of the output of a sensor that can provide one-dimensional measurement; And (d) providing the second ultrapure admixture to a pipe connection and directing the aqueous solution to a point of use in the semiconductor device manufacturing facility. 2. The method according to item 1 of the scope of patent application, wherein the first A second pharmaceutical ingredient It is acid. 3 · As in the method of applying for the first item of patent scope, where the two mixed operations are automatically controlled by K closed loop relationship ° Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 · If the application of the first item of patent scope Method, where the two mixing operations are both M, including the feedforward dependency, and the relationship is automatically controlled by ° 5 * As in the method of the scope of patent application No. 1 'where the sensor is a sound velocity sensor. 6 species A method for producing an accurate ultrapure liquid chemical compound in a semiconductor processing facility, including the following steps: -1- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 42 4 0 03 A8 B8 C8 D8 夂 、 Scope of patent application (please read the notes on the back before filling out this page) (a) Supply the first, second and third sources in a controlled manner from the first, second and third sources A third ultra-pure pharmaceutical component; (b) mixing the first and second two ultra-pure pharmaceutical components, which are mixed under a control relationship dependent on the output of a first sensor to produce a first precision Selected recipes An ultra-pure mixture; (c) warming the third ultra-pure elixir component with the first ultra-pure mixture is dependent on the second sense which is different from the first sensor but also provides one-dimensional measurement Mixing under the control relationship of the output of the measuring device to produce a second ultrapure mixture having a second precise selection formula therefrom; and (d) providing the second ultrapure mixture to a pipeline connection to guide the aqueous solution To the point of use in the semiconductor device manufacturing facility. 7 · If the method of the scope of patent application item 6, the first and second pharmaceutical ingredients are both acids. 8 · If the method of the scope of patent application item 6, The two mixed operations are automatically controlled by the M closed circuit. 9 «The method according to item 6 of the patent application, wherein the two mixed operations are automatically controlled including the relationship of feedforward dependency. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 10 · If the method of the scope of patent application is No. 6, the sensor is a speed sensor. 1 1 · The method according to item 6 of the scope of patent application, wherein one of the sensors is a sound speed sensor and the other is a conductivity measurement. 1 2 ♦ —A method of mixing two or more fluids * which includes the following steps: -2- This paper size applies _ National Standard (CNS > A4 size (210 X 297 mm) 424 003 'B8 C8 ___ D8 VI. Scope of patent application (a) Prepare at least one first fluid and one second fluid to be mixed; (b) Roll the fluids through a tool that can mix the fluids to form a combined fluid (C) guiding an ultrasonic wave through the mixed fluid; and (d) measuring the wave velocity transmitted through the mixed fluid, thereby displaying the density of the mixed fluid and indirectly measuring the first contained in the coupled fluid. The ratio of the amount of a fluid to the amount of a second fluid. 1 3 * As in the method of item 12 of the patent application, wherein the first fluid is an acid. 1 4 · As in the method of item 12 of the patent application, The second fluid is an acid. 15. The method according to item 12 of the patent application, wherein the first and second fluids are an acid. 0 * * An on-site mixing system used in a semiconductor device manufacturing facility To provide ultra-high purity pharmaceuticals to semiconductor manufacturing operations. For users, the system includes: first, second, and third sources, which are connected to supply the first, second, and third ultrapure tincture components for semiconductor processing; a halide device, which is Connected to the sources K to receive the ultra-pure pharmaceutical ingredients and generate their mixtures; a sensor * which is connected to monitor the composition of the ingredient mixture produced by the mixing device, and control series * It is connected and configured to adjust these pharmaceutical ingredients with Κ-3-This paper size applies to Chinese national standards (CNS > A4 size (210 X 297 mm) (Please read the precautions on the back before filling out this page). Clothing- ------ Order --------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1x2 ά U 〇Α8 Β8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The flow rate in the mixing device is adjusted by the following relationship depending on the output of the sensor: it makes the mixing device first mix the first and second components into a precisely selected formulation, and then mix The second and third two Serving as the second, precisely selected formulation. 1 7. Such as the system of patent application No. 16 'wherein the first and second pharmaceutical ingredients are both acid. 1 8 · as patent application No. 1 The system of 6 items, wherein the control compliance includes feed-forward dependence. 1 9 * If the system of item 16 of the patent application 'in which the sensor is a speed sensor, 2 0. — a field hybrid system It is used in semiconductor device manufacturing facilities to provide ultra-high inertness reagents to users of semiconductor manufacturing operations. The system includes: first * second and third sources, which are connected to supply M, 1 and 2 And a third kind of ultra-blunt pharmaceutical ingredients for semiconducting treatment; a mixing device that receives the ultra-pure pharmaceutical ingredients via the source K and generates their mixture; a sensor that is The connection W monitors the composition of the component mixture produced by the mixing device; and a control series, which is connected and configured to adjust the flow rate of the pharmaceutical ingredients into the mixing device with K, which depends on the sensor Output The sticking device first relies on the output of a first-dimensional sensor to mix the first and second components into a precisely selected compound. -4-This paper size applies to China National Standard (CNS) A4 Specifications (210 X 297 mm) — —It— ^ -------- ^ 7_ |! --- ^ (Please read the notes on the back before filling out this page) Consumption for off-site work, Intellectual Property Bureau, Ministry of Economic Affairs Cooperative printed 424 003 Shao ^ C8 D8 6. The scope of the patent application relies on the output of a second elementary sensor to mix the second and third components into a second precisely selected formulation. 21 · As in the system under item 20 of the patent application, wherein the first and second pharmaceutical ingredients are both acids. 22 * If the system is in the scope of patent application No. 20, wherein the control operation includes feedforward dependency. 23 * If the system of item 20 of the scope of patent application is applied, the sensor is a speed sensor. 24 ♦ —System for mixing ultrapure fluids • It includes: (a) First and second chemical dispensers ”The first and second chemical dispensers are adapted to hold the first and second chemical dispensers, respectively. First and second fluid t (b)-a program connection, which is installed between the first and second two chemical dispensers, which can be heated and flowed through and mixed with each other to form a mixture.髑 • The program connection allows the mixed stream to flow to the position of the operator; and (c > an ultrasonic wave transmitting device, which is installed at a position where the ultrasonic wave is transmitted through the mixed fluid. Here, the device includes a tool for measuring the velocity of the wave transmitted through the mixed fluid, and thus indirectly measures the ratio defined by the amount of the first chemical contained in the mixed fluid to 1 of the second chemical. 25. If you apply for the system of item 24 of the patent scope, where the first and second pharmaceutical ingredients are both acid. This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) H n H · Γ · * n tt nnn I «n I (Please read the notes on the back first (Fill in this page) Δ2Λ 0〇3 Α8 BS C8 DS VI. Items of Patent Application Scope System 4 2 Range Fanli-Specificity, please ask Lai Shen for your feedback. The first 6 include 2 packages and control the system. Item 4 2 Fan Li special request. Application device is tested. Sense 7 speed 2 tone is the device tide sense (please read the precautions on the back before filling this page). Intellectual Property Bureau of the Ministry of Economic Affairs, consumer cooperation Du Paper's paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm)
TW86104489A 1996-03-08 1997-04-07 System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing TW424003B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1782896P 1996-03-08 1996-03-08

Publications (1)

Publication Number Publication Date
TW424003B true TW424003B (en) 2001-03-01

Family

ID=21784760

Family Applications (1)

Application Number Title Priority Date Filing Date
TW86104489A TW424003B (en) 1996-03-08 1997-04-07 System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing

Country Status (1)

Country Link
TW (1) TW424003B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6923568B2 (en) 2000-07-31 2005-08-02 Celerity, Inc. Method and apparatus for blending process materials
US7066191B2 (en) 2002-04-12 2006-06-27 Kinetics Germany Gmbh Installation for making available highly pure fine chemicals
US7344298B2 (en) 2002-07-19 2008-03-18 Celerity, Inc. Method and apparatus for blending process materials
US7905653B2 (en) 2001-07-31 2011-03-15 Mega Fluid Systems, Inc. Method and apparatus for blending process materials

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6923568B2 (en) 2000-07-31 2005-08-02 Celerity, Inc. Method and apparatus for blending process materials
US7905653B2 (en) 2001-07-31 2011-03-15 Mega Fluid Systems, Inc. Method and apparatus for blending process materials
US7066191B2 (en) 2002-04-12 2006-06-27 Kinetics Germany Gmbh Installation for making available highly pure fine chemicals
US7344298B2 (en) 2002-07-19 2008-03-18 Celerity, Inc. Method and apparatus for blending process materials

Similar Documents

Publication Publication Date Title
US6050283A (en) System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing
US5722442A (en) On-site generation of ultra-high-purity buffered-HF for semiconductor processing
EP0831978B1 (en) On-site ammonia purification for semiconductor manufacture
US5785820A (en) On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing
EP0739228A1 (en) Recycling of wafer cleaning substances
CN1082402C (en) On-site generation of ultra-high-purity buffered-HF for semiconductor processing
US20020079478A1 (en) On-site generation of ultra-high-purity buffered-HF and ammonium fluoride
US5846387A (en) On-site manufacture of ultra-high-purity hydrochloric acid for semiconductor processing
JP2001527664A (en) In-situ mixing system and method of ultrapure chemicals for semiconductor processing
TW405176B (en) Cleaning fluid for electronic materials
US6001223A (en) On-site ammonia purification for semiconductor manufacture
US5846386A (en) On-site ammonia purification for semiconductor manufacture
JP4294910B2 (en) Substance supply system in semiconductor device manufacturing plant
TW424003B (en) System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing
KR100379886B1 (en) On-site generation system of ultra-purity buffered HF for semiconductor process
EP0835168A1 (en) On-site manufacture of ultra-high-purity nitric acid for semiconductor processing
WO1996041687A1 (en) On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing
US5318706A (en) Method of supplying dilute hydrofluoric acid and apparatus for use in this method for supplying the acid
US20120091099A1 (en) Methods and apparatus for recovery and reuse of reagents
WO1996039264A1 (en) On-site manufacture of ultra-high-purity hydrochloric acid for semiconductor processing
TW382004B (en) An on-site device, in a semiconductor device fabrication facility, for providing ultra-high-purity buffered ammonium fluoride or hydrofluoric acid to a semiconductor manufacturing operation
TW394751B (en) On-Site ammonia purification for semiconductor manufacture
EP0836719A1 (en) System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing
KR19990022224A (en) On-site mixing systems and methods for ultra-pure chemicals for semiconductor processes
JP4097778B2 (en) Gas dissolved cleaning water supply piping

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees