TW417167B - Method for manufacturing two-layered attenuated phase shift mask - Google Patents

Abstract

In accordance with the present method for manufacturing a two-layered attenuated phase shift mask, there is formed a buffer space between the first pattern and second pattern. A mask layer (such as a photoresist layer) is etched via the second pattern, and the buffer space is removed when reaching the second pattern, thereby eliminating the distortion resulting from the coarse boundary of the pattern caused by the stitching.

Description

V. Description of the Invention u) The present invention relates to a manufacturing method of an Attenuated Phase Shift Mask (APSM) having a double-layer structure, and particularly to a method capable of eliminating a fie Id boundary or Manufacturing method of a double-layered attenuation phase shift mask with thick chain and distorted pattern edges caused by stiction; shot connect of sub-field boundary. In the semiconductor manufacturing process, in addition to the light source, the tools required for the exposure of the surface photoresist of the wafer include a photomask for providing a line pattern and performing a pattern transfer. As shown in Figure 1 (a), it is a cross-sectional view of a typical photomask. The main body of this photomask is composed of a flat and transparent glass substrate 10, and the pattern of each layer of the semiconductor element is The surface of the glass substrate 10 is covered with an opaque chromium layer 12 having a thickness of about several hundred Angstroms. Also as shown in FIG. 1 (b), a chromium dioxide layer 14 'having a thickness of about 200 angstroms is added to the surface of the chromium layer 12 to prevent reflection of the metallic chromium layer 12 during exposure. Taking the current line width of 1 to m and a component manufacturing process based on CMOS design as an example, the amount of photomask required for a product usually varies from 10 to 18 depending on its complexity. Therefore, in the fabrication of semiconductors, the alignment between the layers must be done before each exposure of the photoresist, otherwise improper pattern transfer will cause the entire wafer to be scrapped. Please also refer to Figure 1 (c), Figure 1 (c) is a view showing the exposure principle and capabilities of a conventional photomask. It can be seen from Fig. 1 (c) that the exposure ability of the conventional mask is not very satisfactory. The weak resolution caused by this suboptimal exposure capability will cause some degree of distress in subsequent processes. To address the requirements of resolution, a method called "Phase

V. Description of the invention (2)

"Shifting" photolithography has been developed in the same way as major tea manufacturers and research institutes (as shown in Figure 2). Basically, the so-called "phase shifter" is used to add a "phase shifter layer I6" to a typical mask (as shown in Fig. 1 (a)). By the positive and negative interference generated by this phase shift layer during exposure, the image pattern projected on the wafer by the exposure machine has better resolution. Please refer to Figure 2 (a) and (b). Figure 2 (a) shows the sub-resolution contact window barrier _ column (contact array) ' View through the light source; Figure 2 (b) is a view showing its mask exposure principle and resolution capability. Since the MoSiON material has a light transmittance of 8% ', it is suitable as the phase shift layer 16. It is reported to use this attenuation phase shift mask on the lithography process of the wafer. If there is no effective light blocking device at the edge of the pattern of the light ^, two adjacent ones on the wafer are exposed when stepper is used. The edge of the wafer will be exposed twice or four times. As shown in Fig. 2 (a), the "conventional phase-shifting phase-shifting mask is a contact array with a length L and a pitch of p at the edge of the pattern of the mask. Penetrating this area, but if the pitch P and length L cannot be accurately controlled in the process, light will leak. After the light passes through the tiny hole composed of the pitch P and length L, it will cause destructive interference due to diffraction. Causes light to penetrate through the edges of the reticle and expose them to adjacent wafer edges on the wafer to produce two or four exposures. It can be known from the above that the disadvantage of the phase-shifting light emerald made with such a light blocking device is the size of the photomask (the pitch p and the length as shown in Fig. 2 (a) are longer than

Page 5

Difficult to control. And E-beam-direct writing must be used for production. Electron beam direct writing is performed under vacuum. It uses a focused electron beam to perform precise lithography on the pattern on the wafer, and the resulting pattern error is small, and the pattern can be transferred without a photomask. However, the process of electron beam direct writing is very complicated. For this reason, an attenuation phase mask with a double-layer structure has been developed to improve the disadvantages of the phase shift mask described above. Please refer to Figs. 3 (a) and (b). Fig. 3 (a) shows the structure of the first example of a conventional agricultural subtractive phase shift mask with a double-layer structure. Fig. 3 (dagger) shows A plan view of the shape of such a conventional attenuated phase shift mask having a double-layer structure. Such a conventional attenuated phase shift photomask with a double-layer structure includes a quartz substrate 31 made of quartz with a transmittance of approximately 100%, and a fluorine substrate with a transmittance of approximately 3-8%. The material of chromium (CrF) 4M〇Si〇N 'here uses the MoSiON layer 32 as an example, and the chromium layer 3 made of chromium (Cr) with a light transmittance of approximately 0%. Chrome is on the edge of the pattern, so no light will penetrate this area. Next, referring to Figs. 3 (c) to (g), a method for manufacturing such a conventional attenuation-type phase shift mask having a double-layer structure will be described, and Figs. 3 (c) to (g) show A cross-sectional view illustrating a conventional method for manufacturing an attenuated phase shift light sheet having a double-layer structure. As shown in FIG. 3 (c), firstly, the first photoresist layer 34 is covered on the opaque chromium layer 33. The material can be acrylic polymer (ZEP) or other similar materials. . Then, the photoresist layer 34 is directly written for the first time with an electron beam to form the IH1I 111 ^ required for the MoSiON layer 32. Page 6 5. Description of the invention (4) Pattern. After the first direct writing by the electron beam, the area where the first photoresist layer 34 is directly written by the first electron beam must be developed with a developer. This step can be performed using a developer 'such as a mixed solution of dimethyl ether • ethylene glycol (d i e t h y 1 glycol dimethyl ether) and methyl ether (njethy ethy I' ketone). After development, the complex layer 3 3 is wet-etched through the first photoresist layer 3 4. The wet etching solution required for this wet money carving step zen can be a mixed solution of chloric acid (HCIO3) and nitric acid (Ce (NH4) 2 (N03) 6) or other suitable wet etching solution. The result of this wet etching is shown in FIG. 3 (d). Next, the MoSiON layer 32 is dry-etched via the first photoresist layer 34. In this dry etching, a mixed plasma gas of CF4 and oxygen can be used as an etching gas. (The required RF power is 100 W. The result of this dry etching step is shown in Figure 3 (e). Then ' To remove the first photoresist layer 34, this removal step can remove the photoresist layer 34 by using a mixed solution of sulfuric acid and hydrogen peroxide 'or other suitable solution. At this time, the second photoresist must be covered. Layers are used to transfer the pattern required for the chrome layer 33. The material of the second photoresist layer 35 may be acrylic polymer (ZEP) or other similar materials. Thereafter, a second electron beam is performed. Write directly 'to form the pattern of the chromium layer 33. The result obtained after the electron beam is written directly is shown in Figure 3 (f). After the second electron beam is written directly, the second photoresist layer M ( The second development. This step can be performed with a developer, such as a mixed solution of diethyl glycol dimethyl ether and methyl ethyl ketone. After development, the chromium layer 33 to perform partial wet etching. This wet etching must be wet etched Liquid may be 41,716

Five 'invention description (5) Chloric acid (HCl〇3) and ammonium nitrate (Ce (NH (NO beta) suitable wet etching solution. After that, the second: oral fluid or its removal step can be acid and peroxide Hydrogen bis: 3 into 2 to remove this solution to remove the second photoresist layer 35. The most suitable one is = attenuation phase with a double-layer structure (2),) # π, the above-mentioned habit has The attenuation phase shift m of the double-layer structure has the following disadvantages: ^ As far as its repeated exposure situation is concerned, if it is shown by the use of the heart: the layer attenuation phase shift mask is used in the lithography process, then As shown in the second :), the manufacturing process of an attenuated phase shift mask is shown as an example, then W (1 llne) is also 3650 :; b. 5 wavelength of the light source of line 3. Since the conventional attenuated phase shift mask is based on the sound body as the side, if it is not at the edge of the mask pattern; = the pitch P and length L value of the contact to the array, light will penetrate this area And the degree of repeated exposure on the wafer. If this mask is used for the exposure of the stepper to the wafer, and the arrangement of the wafers on the wafer is as shown in Figure 4 Display, two adjacent wafers on the wafer (as indicated by reference numeral 42) may have a repeated exposure of 6% (2 X8% = 16%). And the four corners where the wafers meet (such as reference numeral 41) (Shown), there may be a repeat exposure of approximately 32% (4 X 8% = 32%). This high repeat exposure may exceed the threshold for exposure of the photoresist. That is, The photoresist area may be slightly exposed due to the high repetitive exposure level, resulting in bad graphics, such as ghost images. Second, as far as its manufacturing process is concerned, the attenuation type with a double-layer structure is known.

Page 8 V. Invention ϋϋ------ =, the manufacturing technology of the shift mask requires two direct writing of the electron beam and two or two: photoresist layer covering, so direct writing of the electron beam is quite complicated, And to carry out two; the cost of human photoresist layer coverage is also higher. For this reason, an example of an attenuated phase shift mask with a double-layer structure (for example, China's No. 86104704 patent application) has been developed to improve the disadvantages of the above phase shift mask. ° Refer to Fig. 5 (a) and (b) 'Fig. 5 (a) is a cross-sectional view showing the structure of a second example of a conventional attenuated phase shift mask having a double-layer structure; Fig. 5 (jb) A plan view showing the shape of such a conventional double-layered attenuation phase shift mask. Such a conventional attenuated phase-shifting photomask having a double-layer structure includes a quartz substrate 51 made of quartz with a transmittance of 100%, and a light transmittance of 3— " The ribs are made of a MoSiON layer 52 made of ⑽ and a chromium layer made of substantially 0% & Cr. And in FIG. 5 (b), 510 represents a pattern formed by directly writing an electron beam with a high dose (IGkev; 8 ~ 11 yC / cm2) when manufacturing such a conventional attenuation phase shift mask; 520 Represents a pattern formed by direct writing with an electron beam at a low dose (10kev, 2 ~ 4 vc / cm2) when manufacturing such a conventional attenuation type phase shift mask; 530 indicates that the conventional attenuation type is manufactured The pattern formed by the phase-exposed mask without the exposure area (direct writing without electron beam). Please refer to Figs. 5 (c) to (j), and Figs. 5 (^) to (j) are cross-sections showing a process for explaining the second example of the conventional attenuation-type phase shift mask having a double-layer structure As shown in FIG. 5 (c), the photoresist layer 54 is first deposited on the chromium layer 53. The material can be acrylic polymer (acrylic

5. Description of the invention (7) polymer, ZEP) or other similar materials. Next, two patterns (high-dose exposure area pattern 510 and low-dose exposure area pattern 520) are to be made on the photoresist layer 54, and these two patterns are shown in FIG. 5 (d), which uses an electron beam The photoresist layer 54 is directly written. _ Among them, 'the dose of the high-dose exposure area pattern 51 0 is mainly the sum of the two exposure stomach doses', that is, the first time when the high-dose exposure area pattern 5 丨 is formed, the dose used is 4 ~ 7 // C / cm2, the second dose used was to form the low-volume exposure area pattern 520, and the dose used was the pattern 5 0. The sum of the two exposure doses was 1 M c / cm2. After the electron beam is directly written on the exposure area pattern 51 in the tincture in FIG. 5 (c) and the low-dose exposure area pattern 5 2 0, it is necessary to use a developer to directly write the photoresist layer by the electron beam. The area is developed. This step can be performed with a developer's side such as a diethyl glycol dimethyl ether and a methyi ethyl ketone 2 mixed solution. The result after development is as described in Section Figure 5 (e). After the photoresist layer 54 is developed, the chromium layer 53 is wet-etched through the photoresist layer 54. The wet etching solution required for this wet etching step may be a gas acid (HC 丨〇3) Mixed solution with cerium nitrate (Ce (NH4h (N〇3) 6) or other suitable wet etching solution. The result of this wet etching is shown in Figure 5 (f). Then 'via light The resist layer 54 dry-etches the MoSiON layer 52. The dry-etching step uses a mixed plasma gas of CF4 and oxygen as a dry etching gas, and the required RF power is 100W. The result of this dry etching step is shown in FIG. 5 (g). Fig. 5 (h) shows the result obtained after dry etching the photoresist layer 54.

Page 417167

V. Description of the invention (8) Fruit. The photoresist layer 54 is etched by using an electric paddle gas containing oxygen as a dry etching gas and using a radio frequency power of 40W. Next, a portion of the chromium layer 53 is wet-etched. The wet etching solution required for this wet etching may be a gaseous acid (HCl〇3) and ammonium nitrate (Ce (NH4) 2 (N03) s) /, a mixed solution or other suitable wet etching solution. The result of this wet etching is shown in Fig. 5 (i). ', D, and last', the photoresist layer 54 covering the chromium layer 53 is removed. The removing step is to remove the photoresist layer 54 with a mixed solution of sulfuric acid and hydrogen peroxide, or another suitable solution. Fig. 5 () ·) shows the structure of a second example of such a conventional and attenuated phase shift mask having a double-layer structure. ^ As can be seen from the above, the second case of learning can improve the shortcomings of the first case. The reason for the improvement is described in detail below. 1. As mentioned above, the process of the first example of a phase-shifting photomask with a double-layer structure requires the direct writing of the electron beam twice, so 1 requires the photoresist layer covering twice and the photomask Exposure alignment is time consuming and costly. The conventional second example only requires direct writing by the electron beam. Therefore, only one photoresist layer covering is required. … If the edge of the pattern of the single-layer attenuation phase shift photomask (as shown in Figure 2 (a)) of the first example of Erzhi knows, the values of the contact window array degree L and the pitch P cannot be accurately controlled, The penetration of the light source causes re-exposure on the wafer, and even bad pattern transfer occurs. However, the boundary of the conventional second example is composed of an opaque chromium layer ', so that repeated exposure does not occur, thereby preventing the occurrence of poor pattern transfer due to repeated exposure. …: In the conventional manufacturing method of an attenuated phase shift mask having a double-layered structure 5. In the manufacturing method of the first example of the description of the invention (9), 'because the electron beam is scanned and exposed, the area to be scanned is divided into a plurality of electrons. Beam scanning exposure range (exp0SUre field), sub-fieid, and sub-subfield, and each electron beam scanning exposure range-area is scanned and exposed one by one in order. Therefore, in the actual situation The following 'overlapping phenomenon will occur between sub-ranges, resulting in excessive exposure energy of overlapping areas', resulting in uneven energy at sub-field junctions or field junctions', resulting in connection errors. Distortion or graphic distortion. In view of this, the purpose of the present invention is to provide a method for manufacturing an attenuation phase shift photomask having a double-layer structure in order to solve the above problems, which is suitable for a photomask having a substrate, a first pattern layer and a second pattern layer in order. The manufacturing method includes the following steps: forming a masking layer on the second pattern layer; defining a first pattern and a second pattern on the masking layer, and the first pattern is deep to the second pattern layer, and the first The two patterns are shallower than the first pattern. At the same time, a buffer space is formed between the first pattern and the second pattern. The second pattern layer is first etched to the first pattern layer through the first pattern. A pattern is used to etch the first pattern layer to the substrate; a third name is etched to the second pattern layer through the second pattern to the second pattern layer while removing the buffer space; and the mask layer is used as The mask performs the (fourth engraving to the first graphics layer on the second graphics layer. Among them, the size of the buffer interval is preferably 500 Angstroms). To 1500 angstroms. Preferably, the step of removing the shielding layer is further included. The shielding layer is preferably a photoresist layer, and the photoresist layer is preferably an acrylic polymer.

5. Description of the invention on page 12 (10) The method of defining the first figure by the masking layer is best to use electron beam for direct and direct writing, and the dosage is 8 ~ 11 " c / cm2, and it is on the masking layer. The method of defining the above-mentioned second figure is preferably to write directly using an electron beam, and the dose used is 2 ~ 4 jt / C / cm2. Furthermore, it is preferable that the substrate, the first pattern layer, and the second pattern layer are high-quality quartz, MoSiON, and chromium, respectively. And the method of developing the first pattern and the second pattern of the photoresist layer is preferably performed by using a mixed solution of dimethyl ether · ethylene glycol and methyl ethyl ketone. The first etching is preferably a wet etching, and a mixed solution of gas acid and ammonium nitrate is used as a wet etching solution; the second etching is preferably a dry etching, and a mixed gas of CF4 and radon is The gas is etched and the RF power is 100W; the above-mentioned third etch is preferably dry etching, and oxygen is used as the etch gas and the RF power is 40W; and the above-mentioned fourth etch is preferably wet-etched and chloric acid is used. A mixed solution of ammonium nitrate and ammonium nitrate is a cargo etching solution. In addition, the above-mentioned shielding layer is preferably removed by using a sulfuric acid and a hydrogen peroxide = mixed solution. "In the manufacturing method of Kensei / ¾ eight-phase displacement mask, the buffer space is formed between the first pattern and the second pattern, and the shielding layer is etched to the second pattern layer through the second pattern. At the same time, the above buffer interval is removed, so = except that the edges of the graphics are rough and distorted due to stiction. "4 In order to make the above-mentioned features, features, and advantages of the present invention clearer, the following preferred embodiments are specifically cited, & Detailed description with the attached drawings [Simplified description of drawings]

V. Description of the invention ⑴) — Figures 1 (a) to (c) show the conventional knowledge and exposure ability; the structure of the hood and the exposure source; tsn, A, /? SS; You 盹 77, Exposure Analysis-Figure 2 (a) shows a sub-resolution contact window array created on the edge of the figure, and the secondary view is shown in the figure; Figure 2 (b) shows the conventional knowledge Phase-shifted photomask's view of fabrication, exposure, and exposure capabilities; 'times • Original Fig. 3 (a) to (g) shows the conventional a, displacement of a double-layered structure The structure and shape of the first example of the photomask, and the structure and shape of the umbrella, and its subtraction phase diagram; the + plane diagram and the cross-section of Fig. 4 show the attenuation phase shift mask shown in Fig. 3 Schematic illustration of repeated exposure of adjacent wafer edges during processing ^ Figure 5) U) to (j) show the structure of the second example of a conventional " attenuated displacement mask with a double-layer structure, Plane and plan view of the shape and its structure; and α Figures 6 (a) to (i) show the attenuation-type phase with a double-layer structure according to the present invention 0 ° flat plane view and a cross-sectional view showing the structure of the mask, the shape and the manufacturing process thereof. βΙ Symbol description 10 ~ glass substrate; 12 ~ chrome layer; 14 ~ chrome dioxide layer; 16 ~ phase layer; 31 ~ quartz substrate; 32 ~ Mo SiON layer; 33 ~ road layer; 34 ~ first photoresist layer 35 ~ second photoresist layer; 41 ~ repeated exposure four times area; 42 ~ repeated exposure secondary area; 5b quartz substrate; 52 ~ MoSiON layer; 53, chromium layer; 54 ~ photoresist layer; 510 ~ high-dose exposure area pattern, 520-low-dose exposure area pattern; 530 ~ no-exposure area pattern; 6 substrates; 62 ~ first pattern layer; first

Page 7 14 " ----------- V. Description of the invention (12) Graphic layer; 64 ~ shielding residence. Β >) η _ ^ w, A, den e, ant layer, 640a ~ South 640b ~ low-shape; 641 ~ first shape; 642 ~ second shape, · 643 ~ buffer interval (no exposure area shape). [Embodiment] ^ Figure 6 is a plan view and a cross-sectional view showing the structure, shape, and manufacturing process of a phase-shifting umbrella s with a double-layer structure, a shift mask, and a manufacturing process according to the present invention: The manufacturing method of the structured attenuated phase shift mask is suitable for a mask having a substrate 61 and a shape pattern layer 63 in sequence, for example, as shown in Figure 1 and Figure 1+, as shown in Figure b (a), The above-mentioned substrate 61, the first pattern = 62, and the second pattern layer 63 may be: the light transmittance is generally ^ ⑽

Quartz substrate 61 made of quartz, MoS1ON layer 62 made of MoSi ON with a light transmittance of approximately 8%, and a chromium layer 63 made of a material with a light transmittance of approximately 0%. In addition, the manufacturing method of the attenuation-type phase shift mask having the double-layered structure of the present invention includes the following steps. Step one, as shown in FIG. 6 (b), 'form a shielding layer 64 on the above-mentioned second pattern layer 63. For example,' a photoresist layer 64 is deposited on the chromium layer 63, and the material is acrylic polymer. (Acrylic poiymer, ZEP) or other similar materials. Step 2 As shown in FIGS. 6 (c) and (d), a first pattern 641 and a second pattern 642 are defined on the shielding layer 64, and the first pattern 641 is as deep as the second pattern layer 63 'and the above The second figure 642 is lighter than the first figure 641,

Page 15 V. Description of the invention (13) At the same time, a buffer interval 643 is formed between the first pattern 641 and the second pattern 642. For example, 'as shown in FIG. 6 (c), two patterns (south dose exposure region pattern 640a and low dose exposure region pattern 640b) are made on the photoresist layer 64, and at the same time, such patterns 64 0a and A buffer interval 643 is formed between 640b, as shown in the upper diagram of FIG. 6 (c). As for the method of forming the high-dose exposure area pattern 64〇a, the photoresist layer 64 is directly written by using an electron beam, and the used dose is lOkev'8 ~ U eC / cm2. The method for forming the low-dose exposure area pattern 640b is to directly write the photoresist layer 64 using an electron beam, and the dose used is 1 Okev '2 to 4 µC / cm2. That is, 640a represents the first pattern to be formed when manufacturing the decay (subtractive phase shift mask of the present invention, direct writing with an electron beam at a high dose (8 ~ n MC / cm2). 640b represents the manufacturing process In the invention of the attenuation phase shift mask, the second pattern to be formed by direct writing of the electron beam with a low dose (2 to 4 vC / cV) is used. 64 3 indicates when the attenuation phase shift mask of the present invention is manufactured. 5 The buffer interval formed by the non-exposed area (without direct writing of the electron beam) 'and the size of this buffer interval 643 is 500 angstroms to 1500 angstroms. Then,' the high-dose exposure region pattern in FIG. 6 (c) 64 〇a and low-dose exposure area pattern 64 〇b after the direct writing of the electron beam, the developer's direct writing of the photoresist layer 6 4 by the electron beam is required to develop the region. (This step can be developed Agent, such as dimethyl ether • ethylene glycol (diethyl glycol dimethyl ether) and methyl. Ethyl ketone (methyi ethyl ke tone) mixed solution. The results after development are shown in Figure 6 (d)

Tp.

Page 16 V. Description of the invention (14) Step 3 As shown in FIG. 6 (e), the second pattern layer 63 is first etched to the first pattern layer 62 via the first pattern 641. For example, the chromium layer 63 is wet-etched via the first pattern 64 1 of the photoresist layer 64. The wet etching solution required for this wet etching step can be a mixed solution of gas acid (HC103) and ammonium nitrate (Ce (NH4) 2 (N03) e) or other suitable wet etching solution. Step 4 is as shown in Figure 6 (f ), The first pattern layer 62 is etched to the substrate 61 via the first pattern 641. For example, as shown in FIG. 6 (f), the MoSiON layer 62 is dry-etched through the first pattern 641 of the photoresist layer 64. This dry etching step uses a mixed plasma gas of cp4 and oxygen as a dry etching gas. The RF power is 100W. Step 5 As shown in FIG. 6 (g), the masking layer 64 is etched to the second pattern layer 63 through the second pattern 642 for a third time, and the buffer interval 643 is removed at the same time. For example, as shown in FIG. 6 (g), the photoresist layer 64 is dry-etched mainly through the second pattern 6 4 2 and the buffer interval 643 is removed at the same time. The photoresist layer 64 is etched by using a plasma gas containing oxygen as a dry etching gas' and using a radio frequency power of 40W. Step 6 As shown in FIG. 6 (h), using the above-mentioned shielding layer 64 as a curtain,

'417167 V. Description of the invention (15) The second pattern layer 63 is subjected to fourth etching to the first pattern layer 62 described above. For example, as shown in FIG. 6 (h), the chromium layer 6 3 is wet-etched with the photoresist layer 64 as a mask. The wet etching solution required for this wet etching can be a mixed solution of gas acid (HC10) and cerium nitrate (Ce (NH4) 2 (N03) 6) or other suitable wet etching solutions. Finally, as shown in FIG. 6 (i), the photoresist layer 64 covered on the chromium layer 63 can be removed. This removal step is to remove the photoresist layer with a mixed solution of sulfuric acid and hydrogen peroxide, or other suitable solutions. As described above, according to the method for manufacturing an attenuated phase shift mask having a double-layered structure according to the present invention, since the buffer interval 6 4 3 is formed between the first pattern and the second pattern, The masking layer [When the etching is performed to the second pattern layer and the buffer space is removed at the same time, the edges of the pattern may be rough and distorted due to the misconnection (shQtCDnneet) of the electron beam exposure. Although the present invention has been disclosed in the preferred embodiment as above, it is not intended to: define the present invention. Any person skilled in the art can make changes and decorations without departing from the spirit and scope of the present invention. A ^ J Therefore, the protection scope of the present invention is defined by the scope of the patent application attached hereto.

Page 18

Claims (1)

6. Scope of Patent Application 1. A method with a double-layer structure 'applicable to sequentially having a substrate and an army', and the above-mentioned manufacturing method includes forming the first pattern deep to the above to define the first pattern deep on the second pattern layer and the shielding layer. The second pattern layer has a shallow pattern and the first pattern interval is the same; the first steps of the first pattern layer and the second pattern layer of the manufacturer of the agricultural subtraction phase shift mask: forming a shielding layer; a pattern and a second pattern, and The first and second patterns are buffered between the first and second patterns. The second pattern layer is first etched to the first pattern layer via the first pattern. The first pattern layer is secondly etched to the substrate; the third pattern is etched to the second pattern layer through the second pattern; and the buffer space is removed simultaneously; and the masking layer is used as the masking layer as The mask is used to axe the second graphics layer to the first graphics layer for a moment. . +. Where the speed 2 · The manufacturing method described in item 1 of the scope of patent application ′ 'The size of the buffer interval is 500 Angstroms to Moo Angstroms. , Wherein the manufacturer's table as described in item 1 or 2 of the scope of patent application includes the step of removing the above-mentioned shielding layer. In which, the above-mentioned manufacturing party / clothing as described in item 3 of the scope of patent application, the shielding layer is a photoresist layer. Wherein, the manufacturing method as described in item 4 of the scope of patent application above, the photoresist layer is an acrylic polymer. Page 19 VI. Scope of patent application 6. Scope of patent application 6 Ϊ: Please refer to the manufacturing method described in item 5 of the patent scope, in which the method of determining the first pattern described above is to use an electron beam. It is determined directly and the dose used is, and the wide pattern used in the above-mentioned masking layer boundary is to directly write using an electron beam, and 'day outside the above-mentioned first — Α θ is called and the dose is δ ~ 1. The dosage of the square of the two figures is 2 ~ 4 " C / cm2. The manufacturing method as described in item 6 of the scope of patent application by the U.S. factory, wherein the first pattern layer and the second pattern described above are made of high quality quartz, MoSiON, and 8 '. The manufacturing method as described in item 7 of the scope of patent application, wherein The development method of the above first pattern and the second pattern, which are seen in the above two steps, is carried out by using a mixed solution of methylol, ethylene glycol, thallium, and ethidium. 9 'The manufacturing method as described in item 8 of the scope of the patent application, wherein the above-mentioned coin is wet etching' and a mixed solution of gas acid and ammonium nitrate is used as a wet etching solution. … I U, the manufacturing method described in item 9 of the scope of the patent application, wherein the first remaining time is a dry money engraving, and a mixed gas of cf4 and oxygen is a money engraving gas ”and the radio frequency power is 10 ⑽. II. The manufacturing method as described in item 10 of the scope of patent application, wherein the second time lapse is a dry time lapse, and oxygen is a time lapse gas, and RF power is the weight. 1 2. The manufacturing method according to item 11 of the scope of patent application, wherein the fourth etching is wet etching, and a mixed solution of gas acid and ammonium nitrate is used as a wet etching solution. 13. The manufacturing method described in item 12 of the scope of patent application, wherein Page 20 Page 21