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經濟部智慧財產局自工消費合作社印製 五、發明説明（/ ) 發明領域 本發明是關於一種用來製造電子元件及電子元件半成 品的溼式處理方法，例如使用於積體電路中的半導體晶圓 。更進一步的說，本發明是關於使用流體以改善密閉式作 業線的基板處理製程，例如半導體晶圓及平面顯示器。 發明背景 溼式處理法是被廣泛的使用在積體電路製造過程中’ 其通常包括電子元件半成品’例如半導體晶圓、平面面板+ 及其它電子元件半成品。一般而言，電子元件半成品是放 置於一個液浴或容器中，然後再與一系列的反應性化學處 理流體及淸洗流體接觸。該處理流體可不被限定地用來蝕 刻、光阻的去除以及電子元件半成品預先擴散淸洗及其他 的淸洗步驟。在美國專利案號4,633,893—McCormdl等人 描述了一個電子元件半成品之處理系統的實例，在此將其 倂入本文爲參考，使其完全地揭露。 在典型的溼式處理技術中，電子元件半成品是在一裝 滿流體的容器(容器對四周環境是密閉）、單一的水槽、溼 式工作台或液浴中進行處理。在典型的溼式處理技術中， 電子元件半成品是曝露於反應性化學處理流體中以去除電 子元件半成品上的污染物（亦即，淸洗），或者是蝕刻表面 的某些部分。在此淸洗或蝕刻完成以後，化學物質會附著 於電子元件半成品的表面上。這些附著的化學物質在電子 元件半成品以下一步的反應性化學處理流體處理之前必須 被去除，使得化學殘留物不會污染下一步的反應性化學步 本紙伕尺度適用中國國家標準（CNS ) A4规格（210X2^公釐) ...· (請先閲讀背面之注^3^項再^"':本頁)Printed by the Self-Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (/) FIELD OF THE INVENTION The present invention relates to a wet processing method for manufacturing electronic components and semi-finished electronic components such as semiconductor crystals used in integrated circuits circle. Furthermore, the present invention relates to a substrate processing process using a fluid to improve a closed operation line, such as a semiconductor wafer and a flat panel display. BACKGROUND OF THE INVENTION The wet processing method is widely used in the manufacturing process of integrated circuits, which generally includes semi-finished electronic components such as semiconductor wafers, flat panels, and other semi-finished electronic components. Generally speaking, semi-finished electronic components are placed in a liquid bath or container and then contacted with a series of reactive chemical treatment fluids and washing fluids. The processing fluid can be used without limitation for etching, photoresist removal, pre-diffusion washing of semi-finished electronic components, and other washing steps. An example of a processing system for semi-finished electronic components is described in U.S. Patent No. 4,633,893—McCormdl et al., Which is hereby incorporated by reference herein for complete disclosure. In typical wet processing technology, semi-finished electronic components are processed in a container filled with fluid (the container is sealed from the surrounding environment), a single water tank, a wet bench, or a liquid bath. In a typical wet processing technique, a semi-finished electronic component is exposed to a reactive chemical processing fluid to remove contaminants from the semi-finished electronic component (i.e., degreasing), or to etch portions of a surface. After this rinsing or etching is completed, chemicals will adhere to the surface of the semi-finished electronic component. These attached chemical substances must be removed before the semi-finished electronic component is processed with the next reactive chemical treatment fluid, so that the chemical residues will not contaminate the next reactive chemical step. The paper size of the paper applies the Chinese National Standard (CNS) A4 specifications ( 210X2 ^ mm) ... · (Please read the note ^ 3 ^ on the back before ^ " ': this page)
413833 五、發明説明（>) 驟。傳統上，這些附著的化學物質是使用去離子(DI)水來 去除。 在電子元件或電子元件半成品的製造中，有一種趨勢 是朝向開發及使用小型的處理設備，以及更小型簡化處理 的應用。然而，促進小型處理設備係由朝向增加生產力於 使用較大（亦即300mni)半成品晶0方面的趨勢而緩和下來 。兩種一般已知朝向設備的小型化的方法是噴霧處理法及 單一液浴浸漬法。.因其擁有較小晶粒形狀及較大晶圓處理 的優點，從可製造化的立場而言，單一液浴處理法的使用 已成爲有益的。 對使甩數個液浴及淸洗槽的溼式處理浸漬工作台典型 具有較大的水槽容量，其在滿載時可以6.25mm間隔分開 以容納200mm晶圓。在300mm晶圓滿載的標準晶圓間隔 是10mm。使用單一處理容器之全流(full-flow)處理器具有 較小的容器尺寸，以致於晶圓間隔爲在浸漬水槽中處理之 晶圓間隔的一半.。這種在全流單一處理容器中降低間隔的 處理爲令人滿意的.，由於達成水及化學物質消耗的減少。 並且，因爲在單一容器中用於相等總流體體積之流速將因 經降低間隔處理而增加，因此改善晶圓的淸洗。因此’在 比標準間隔一半還小的晶圓單一容器處理中，例如在三分 之一或四分之一的間隔處理法，比已知的二分之一間隔處 理系統還要令人滿意。在溼式處理中，減少間隔至標準晶 圓盒間隔的三分之一或四分之一，將使得水及化學物質的 消耗量各別地減少至三分之一倍或四分之一倍。如前所討 紙張尺度適用十国國家標準丨匚〜^丨六“見格丨以^:^^”公釐） 413833 A7 B7 五、發明説明〇 論過的，在三分之一間隔的處理中流速會增至三倍，在四 分之一間隔處理中會增至四倍。 這種間隔小於標準間隔一半的晶圓單一容器處理法， 然而，在過去還未被證明可以接受，是由於關於單一容器 中減少間隔處理的問題存在51在三分之一或四分之一的淫 式處理期間，已經發現到一種流體流經晶圓周圍之不欲的 趨勢。流過晶圓周圍之處理流體的不均勻流動，會造成晶 圓蝕刻及淸洗的不均勻性。起因於減少間隔的溼式處理所 產生的處理流體的不均勻流動，已經使得再全流單一處理 容器中之300mm晶圓的處理未能達成所欲的生產力及成本 因此，在本技藝中需要一種處理方法，其容許再單一 處理容器中有效率的處理電子元件半成品，例如300mm的 晶圓，在該容器處晶圓間隔可以小於此類晶圓之標準間隔 的一半。本發明所強調和其它的需求是一樣的。 發明摘述 ： 本發明描述，，尤其，一種用來製造電子元件及電子元 件半成品的溼式處理方法，例如使用在積體電路中的半導 體晶圓。更進一步來說，本發明關於一種，例如，使用溼 式處理技術來淸洗電子元件半成品的方法1在此處具有少 於標準晶圓間隔一半的間隔係有效率地在單一處理容器中 處理。 發明詳述 · 用於處理電子元件半成品，例如半導體晶圓之全流單 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210Χ29Κ) 請 先 閲 讀 背 填. 寫 本 頁 .訂 經濟部智慧財產局員工消費合作社印装 413833 A7 B7 五'發明説明（ 經濟部智慧財產局員工消費合作社印製 一處理容器的裝置及操作係說明在前述McConnell的專利 中。然而’本發明並不想被限制在該專利所描述的處理容 器。在本技藝中習知裝置係用來將晶圓自標準盒傳送至例 如二分之一間隔、三分之一間隔及四分之一間隔的距離， 該標準盒係用於在經描述之處理容器中的晶圓攜帶器中處 理，晶圓間隔在該經描述之處理容器處自標準間隔降低》 如以上所述，關於在單一容器處理系統中的溼式處理 ，此處晶圓間隔是小於標準晶圓間隔的一半，流體流過疊 放在該容器的晶圓周邊不會有令人滿意的趨勢。已發現經 降低晶圓間隔以增加流體流經晶圓的阻力，產生晶圓的周 邊之處理流體的流動。已發現在晶圓中央的流動阻力是最 高。 根據本發明之經降低間隔處理法以提供處理流體在單 一容器系統中均勻流過晶圓，一流動阻力阻障物固定於晶 圓容器的外殻內之晶圓疊架的上流處。此晶圓疊架可能是 300mm晶圓以二分之一標準間隔排列的晶圓盒，並且此晶 、 圓疊架更佳爲300mm晶圓以二分之一或四分之一'間隔排列 的晶圓盒。該流動阻力阻障物是被設計成在流體流過晶圓 之前，會先朝上流經阻障物，使得流體被推向晶圓的中央 流動，在此處流動阻力是最大的。在最佳具體實施例中， 該流動阻力阻障物是一種任何適當的多孔性材料的篩網， 此篩網中央處篩網中的孔洞是大於（在室中此處壓力較高） 篩網旁邊的孔洞（此處壓力比較小）。因此，此篩網中的孔 洞在篩網中央可以被分隔的較爲接近，且在篩網旁邊的孔 請 閲 讀 背 之 注 意 再 本 頁 Μ 訂 本紙张尺度適用中國國家榡準（CNS ) Α4規格（2!0Χ 29专公釐） 413833 A7 B7 經濟部智结財產局8工消費合作社印製 五、發明説明（ξΓ ) 洞可以分隔較大的距離，以容許更多流體進入壓力比較‘大 的室中並較少流體流入壓力較小處。在本具體實施例中* 在篩網上的孔洞可以是相同的尺寸，或者是有變化的以提 供所欲的流動形式。較佳地，選擇孔洞的圖形及孔洞的尺 寸以提供在晶圓中央流體流動的最少阻力，以及在晶圓旁 邊流體流動的最大阻力。如上述美國專利案號4,633,893中 所描述的較佳設計流動阻力阻障物以分配流體流過晶圓的 塞狀流狀況。在篩網中孔洞的數目、形狀、尺寸及排列是 可以讓熟悉該技術領域的人，基於以加強流體流動朝向晶 ‘圓中央的流動參數來選擇。這些參數包括容器的尺寸與形 狀，使用之流體的化學組成，流動的速率，以及流體的壓 力。孔涧尺寸應足夠大以允許在液體中溶解的氣體通過篩 網。在阻障物質中的孔洞可以使用雷射或已知的穿孔裝置 來製作。 爲了減少在阻障物中流體流動的阻礙，作爲流動阻力 阻障物之較佳材、料包括織物材料，及一種纖維網狀材料， 其中纖維是以任意的纖維網狀組織散佈在流動阻力阻障物 中。因爲在流動阻力阻障物中製造的缺陷會在使用時間內 從阻障物去除，因此增加處理容器中的汙染物’並且也會 在其上面捕捉化學物質，因此一種織物材料之阻塞阻障物 般而r幾乎沒有製程的缺陷，是—種最佳的流動阻力 阻障物材料。在另—較佳具體實施例中，該流動阻力阻障 物是-種化學抵抗性聚合物篩網材料，以鐵_(Ten〇_ 最佳的尔口物材料。流動阻力阻障物在晶圓處理操作中對 先 閲 讀 意 事 項 再 费. 訂 本錄尺度適用中咖家#1 經濟部智慧財產局員工消費合作社印製 413833 A7 ___B7__ 五、發明説明（乙） 於各種不同化學物質具有化學抵抗性爲較佳的，如此可以 避免阻障物材料化學性的衰退。 在本發明中另一具體實施例，流體注射裝置例如經控 制的注射噴嘴被裝設於處理容器中，以提供增加晶圓中央 區域流體流動。該注射噴嘴的位置及輸出參數是基於上述 已知相對於流動阻力阻障物的流動參數所決定，並提供在 經減少間隔的處理中晶圓表面流體流動的均勻分佈。經控 制流體注射噴嘴可以用來與此處所描述的流動阻力阻障物. 相結合，以提供經過晶圓表面流體流動的均勻分佈，或者 可以單獨使用該經控制流體注射噴嘴，以提供在遍及整個 處理容器中所欲的流動分佈。也可以使用調節裝置或其它 流動控制裝置。通常流進單一液浴中之淸潔或淸洗流體的 .速度分布圖，必須是以一種克服液浴中某一區域高流動阻 力的方法來加以控制。在晶圓的範例中，最高的阻力是發 生在晶圓的中央部分（也就是最大的截面處）及疊架的中央 0 在本發明中的另一步驟是在晶圓的化學浸泡階段中使 用磁波振盪，使得當溼式處理流體流經以少於二分之一間 隔的晶圓疊架時，可以提供其均勻流動。在處理期間，聲 流的硏發是藉著磁波振盪的使用，該聲流可以幫助晶圓之 中化學物質的分佈。在此處理步驟期間，超音波約500千 赫至1百萬赫以一種已知的方法分佈於淸潔流體中，以去 除晶圓表面的雜質。其他頻率或混合技術也可以用來克服 當局流動阻力存在時晶Η中所發現的大邊界層。 本紙张尺度適用中國國家標準（CNS ) Λ4規格（210X 297公整） (#先聞讀背面之注意事項再^-¾.本頁) -裝- 訂 線 41S833 A7 B7 五、發明説明（1) 在本發明中的另一步驟是對該流體使用非常高的注射 速率，使得當流體流經以少於二分之一間隔的晶圓疊架時 ，可以提供溼式處理流體的均勻流動。藉著使用非常高的 化學物質注射流動速率，由於流動的動量，使得化學物質 在三分之一或四分之一間隔緊密排列的晶圓之間被施力。 在四分之一間隔排列的100-300mm晶圓的晶圓盒中，較佳 的化學物質注射流動速率是18至30gpm(也就是每片晶圓 18-30gpm)以提供在單一容器中有效率的減少間隔溼式處理 〇 在本發明中的另一步驟是在容器的處理區域中，以一 足夠的時段注入化學物質以達到平衡狀態，使得當流體流 經以少於二分之一間隔的晶圓疊架時，可以提供溼式處理 流體的均勻流動。在與標準的化學物質注射時間相比較， 藉著相當長的化學物質注射時間的運用，即使化學物質或 許最初會以不均勻的方式流過晶圓，在平衡達成之後，在 晶圓中央化學物質的濃度會大約等於在晶圓周邊化學物質 的濃度。在單一容器裏提供有效減少間隔濕式處理之較佳 的化學物質注射時間是從60秒的注入時間到120秒的注入 時間，其視流動速率及容器尺寸而定。 在不脫離本發明的精神和範圍內，本發明也可以以其 他特定形式實施，並且據此，其專利保護範圍當視後附的 申請專利範圍，而非上述的說明書內容。 本紙伕X度適用中囡囡家標準{ CNS ) Λ4規格（2)〇Χ；?97公1 > (請先閲讀背面之注意事項再4,·#本頁) 訂 線、. 經濟部智慧財產局員工消費合作社印製413833 V. Explanation of the invention. Traditionally, these attached chemicals have been removed using deionized (DI) water. In the manufacture of electronic components or semi-finished electronic components, there is a trend toward the development and use of small-scale processing equipment, as well as smaller and simplified applications. However, the promotion of small-scale processing equipment has been alleviated by the trend towards increased productivity in the use of larger (i.e., 300mni) semi-finished crystals. Two generally known methods for miniaturization of equipment are a spray treatment method and a single liquid bath immersion method. Because of its advantages in smaller die shapes and larger wafer processing, the use of a single liquid bath process has been beneficial from a manufacturable standpoint. The wet processing immersion table that makes several liquid baths and rinsing tanks typically has a large water tank capacity, which can be separated at 6.25mm intervals to accommodate 200mm wafers at full load. The standard wafer interval when a 300mm wafer is fully loaded is 10mm. A full-flow processor using a single processing container has a smaller container size such that the wafer interval is half of the wafer interval processed in the immersion tank. This reduced-spacing treatment in a full-flow single treatment vessel is satisfactory, as a reduction in water and chemical consumption is achieved. Also, since the flow rate for equal total fluid volume in a single container will increase due to the reduced interval processing, wafer cleaning is improved. So 'in single-wafer processing of wafers smaller than half the standard interval, such as in one-third or one-quarter interval processing, is more satisfactory than the known one-half interval processing system. In wet processing, reducing the interval to one-third or one-fourth of the standard wafer box interval will reduce the consumption of water and chemicals to one-third or one-fourth, respectively. . As discussed previously, the paper standards apply to the national standards of the ten countries 丨 匚 ～ ^ 丨 Six “seeing grid” with ^: ^^ ”mm) 413833 A7 B7 V. Description of the invention The medium flow rate will be tripled and quadrupled in a quarter interval treatment. This single-container processing method of wafers with intervals less than half of the standard interval, however, has not been proven acceptable in the past due to the problem of reducing the interval processing in a single container51 in one-third or one-quarter An undesired tendency for fluids to flow around the wafer has been discovered during the kinky process. The non-uniform flow of the processing fluid flowing around the wafer can cause non-uniformity in wafer etching and scouring. Due to the uneven flow of the processing fluid produced by the reduced wet processing, the processing of 300mm wafers in a full-flow single processing container has failed to achieve the desired productivity and cost. Therefore, a technique is needed in the art A processing method that allows efficient processing of semi-finished electronic components in a single processing container, such as a 300 mm wafer, at which the wafer spacing can be less than half of the standard spacing for such wafers. The emphasis of the present invention is the same as other needs. SUMMARY OF THE INVENTION: The present invention describes, in particular, a wet processing method for manufacturing electronic components and semi-finished electronic components, such as semiconductor wafers used in integrated circuits. Furthermore, the present invention relates to, for example, a method 1 for cleaning a semi-finished electronic component using a wet processing technique. Here, a method having an interval less than half of a standard wafer interval is efficiently processed in a single processing container. Detailed description of the invention · For the processing of semi-finished electronic components, such as semiconductor wafers, full-flow single-sheet paper standards are applicable to Chinese National Standards (CNS) Λ4 specifications (210 × 29K) Please read the backfill first. Write this page. Order Intellectual Property Bureau of the Ministry of Economic Affairs Employees' Cooperative Cooperative Printing 413833 A7 B7 Five 'Invention Description (The device and operation of printing a processing container by the Employees' Cooperative Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is described in the aforementioned McConnell patent. However, the present invention is not intended to be limited to this patent The processing container described. Conventional devices are used in the art to transfer wafers from standard boxes to distances such as one-half interval, one-third interval, and one-quarter interval. Processed in a wafer carrier in a described processing vessel, where the wafer spacing is reduced from the standard spacing at the described processing vessel. As described above, with regard to wet processing in a single container processing system, this The wafer interval is less than half of the standard wafer interval, and there will be no satisfactory tendency for the fluid to flow through the periphery of the wafer stacked in this container. The wafer interval is now reduced to increase the resistance of the fluid to flow through the wafer, resulting in the flow of the processing fluid around the wafer. It has been found that the flow resistance in the center of the wafer is the highest. The processing fluid flows uniformly through the wafer in a single container system, and a flow resistance obstacle is fixed on the upper part of the wafer stack in the shell of the wafer container. This wafer stack may be a 300mm wafer divided into two One of the standard spaced-apart wafer boxes, and this wafer, round stack frame is more preferably a 300mm wafer box arranged at a half or quarter 'space. The flow resistance barrier is designed Before the fluid flows through the wafer, it will first flow through the barrier, so that the fluid is pushed to the center of the wafer, where the flow resistance is the greatest. In the preferred embodiment, the flow resistance An obstacle is a screen of any suitable porous material. The hole in the screen at the center of the screen is larger (higher pressure in the chamber here) than the hole next to the screen (lower pressure here). Therefore , Holes in this screen The holes can be separated closer in the center of the screen, and the holes next to the screen should be read on the back. Note this page. The paper size is applicable to China National Standards (CNS) Α4 size (2! 0 × 29 franchise). (%) 413833 A7 B7 Printed by the Zhijie Property Bureau of the Ministry of Economic Affairs and printed by the 8th Industrial Cooperative Cooperative V. Description of invention (ξΓ) Holes can be separated by a large distance to allow more fluid to enter the chamber where the pressure is greater and less fluid to flow in Where the pressure is small. In this specific embodiment * the holes on the screen can be the same size or changed to provide the desired flow form. Preferably, the pattern of the holes and the size of the holes are selected to Provides minimal resistance to fluid flow in the center of the wafer and maximum resistance to fluid flow next to the wafer. A preferred design of a flow resistance barrier to distribute the plug flow condition of the fluid through the wafer is as described in the aforementioned U.S. Patent No. 4,633,893. The number, shape, size, and arrangement of holes in the screen can be selected by those skilled in the art based on the flow parameters that enhance the fluid flow toward the center of the crystal. These parameters include the size and shape of the container, the chemical composition of the fluid used, the rate of flow, and the pressure of the fluid. The orifice size should be large enough to allow gases dissolved in the liquid to pass through the screen. The holes in the barrier material can be made using lasers or known perforating devices. In order to reduce the hindrance of fluid flow in the barrier, the preferred materials, materials including fabric materials, and a fibrous mesh material for the flow resistance barrier are fibers that are dispersed in the flow resistance barrier by any fibrous network structure. Obstacles. Because defects made in the flow resistance barrier will be removed from the barrier within the time of use, it will increase the contaminants in the processing vessel and will also capture chemicals on it, so a fabric material blocks the barrier In general, r has almost no process defects and is an optimal flow resistance barrier material. In another preferred embodiment, the flow resistance barrier is a chemically resistant polymer screen material with iron _ (Ten〇_ the best entrance material. Flow resistance barrier in the crystal In the round processing operation, the first reading is required and the fee is charged. The scale of the book is applicable to the coffee shop # 1 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 413833 A7 ___B7__ 5. Description of the invention (B) Chemical resistance to various chemical substances The property is better, so that the chemical degradation of the barrier material can be avoided. In another embodiment of the present invention, a fluid injection device such as a controlled injection nozzle is installed in the processing container to provide an increased wafer. Fluid flow in the central area. The position and output parameters of the injection nozzle are determined based on the above-mentioned known flow parameters with respect to the flow resistance barrier, and provide a uniform distribution of fluid flow on the wafer surface in a reduced interval process. Controlled fluid injection nozzles can be used in combination with the flow resistance barriers described herein to provide a uniform distribution of fluid flow across the wafer surface Or, the controlled fluid injection nozzle can be used alone to provide the desired flow distribution throughout the entire processing vessel. Adjustment devices or other flow control devices can also be used. Cleaning or washing that usually flows into a single liquid bath The velocity profile of the fluid must be controlled in a way that overcomes the high flow resistance in a certain area of the liquid bath. In the wafer example, the highest resistance occurs in the central part of the wafer (that is, the largest At the cross section) and the center of the stack. Another step in the present invention is to use magnetic oscillations during the chemical immersion stage of the wafer so that when the wet processing fluid flows through the wafer stack at less than one-half intervals. It can provide a uniform flow when it is mounted. During processing, the burst of acoustic current is used by magnetic wave oscillation, which can help the distribution of chemicals in the wafer. During this processing step, the ultrasonic wave is about 500 KHz to 1Mhz is distributed in the cleaning fluid in a known way to remove impurities from the wafer surface. Other frequencies or mixing techniques can also be used to overcome the authorities The large boundary layer found in the crystal when the dynamic resistance is present. This paper size applies the Chinese National Standard (CNS) Λ4 specification (210X 297 round) (#First read the precautions on the back then ^ -¾. This page)- Binding-41S833 A7 B7 V. Description of the Invention (1) Another step in the present invention is to use a very high injection rate for the fluid, so that when the fluid flows through the wafer stack at less than half the interval It can provide a uniform flow of wet processing fluid when using a rack. By using a very high chemical injection flow rate, due to the momentum of the flow, the chemicals are closely spaced between the wafers at one-third or one-quarter intervals. In a wafer cassette of 100-300mm wafers arranged in a quarter interval, the preferred chemical injection flow rate is 18 to 30 gpm (that is, 18-30 gpm per wafer) to provide Efficiently reduced interval wet processing in a single container. Another step in the present invention is to inject chemicals into the processing area of the container for a sufficient period of time to reach equilibrium, so that when the fluid flows through less than two Quarter interval When wafer stack frame may be provided a uniform flow of fluid wet treatment. Compared with the standard chemical injection time, with the use of a relatively long chemical injection time, even if the chemical may initially flow through the wafer in an uneven manner, after the equilibrium is reached, the chemical is in the center of the wafer. The concentration will be approximately equal to the concentration of chemicals around the wafer. The preferred chemical injection time to provide effective reduction of the interval wet processing in a single container is from 60 seconds to 120 seconds, depending on the flow rate and container size. Without departing from the spirit and scope of the present invention, the present invention can also be implemented in other specific forms, and according to this, the scope of patent protection should be regarded as the scope of the appended patents, rather than the above description. The X degree of this paper is applicable to the standard of Chinese house {CNS) 4 specifications (2) 0 ×;? 97 male 1 > (Please read the precautions on the back before 4, ##) Printed by Bureau Consumers Cooperative