五 經濟部智慧財產局員工消費合作社印製 ^^41266|；_ 發明說明（/) 發明領域 本發明係有關一種光阻輪廓計算方法與一種光阻輪廓 計算系統。 相關技術說明 於微影印刷術對光學鄰近效應校正（opc)的模擬中必 需以高速計算出阻抗大小。所以*有一種方法係藉由因 分享晶圓上具有某些臨限値的光強度分布而建立的等高 線施行趨近計算。 於藉由氟化氪準分子雷射施行曝光的例子裡，使用的 是依化學方式放大而能達成高解析度特性的阻抗材料以 取代習知_ n obo lac -型式的光阻材料。依化學方式放大的 阻抗材料中，因爲酸在熱處理擴散製程（後烘烤）中的 擴散作用中所受到的影響是極顯著的。爲了將這種影響 列入考量，有一種方法係經由光強度分布I與高斯函數g 的回旋積分導出的輪廓函數P，並以藉由因分享具有某臨 限値輪廓函數P而建立的等値線爲基礎計算出阻抗大 小，如同由Hiroshi Fukuda，KeikoHattori等人發表於 SPIE, vo].3 3 34, p.1 56- 1 62，1 9 8 8 的「於快速阻抗輪廓模 擬的準-物理模型，以及大型積體電路（LSI)圖案設計中透 鏡像差以及酸擴散作用的重要性（Quasi-physical model for fast resist contour simulation, importance of lens aberrations and acid diffusion in LSI pattern design)」論 文中所揭示的。 至於用來計算晶圓上光強度的方法，則於由Y.C. Pati， 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------* ----— l· — 訂 i! — ·議 1線— (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4=^^^ at — _B7 _ 五、發明說明（> ) Υ·τ· ¥aug， J.W· Lian，和 T. Kailath等人發表於 SPIE, vol. 2 197, p.3〗 4 - 3 2 7的「相位平移用遮罩：自動設計 以及遮單的需求（Phase-shifting Mask: Automated D e s i g n a n d M a s k R e q u i r e e n t)」論文中掲示了 一掴逭 種方法。 吾人能夠透過下列方程式以遮罩的透射係數t以及代 表步陞光學系統特徵的零位函數和α計算出晶圓上的 光強度分布i(x，y)。 I(x,y) = Iak | (t* φ k)(x,y) [ 2 (1) 其中（t*pk)(x,y)表示的是t和<pk的迴旋積分》 考量在依化學方式放大之阻抗材料中酸的擴散作用下 得到的輪廓函數P，是經由下列方程式高斯函數g及光強 度分布I而導出的。 P(x.y)=(g*i)(x.y) (2) 以下將照第4圖的流程圖討論依習知方法計算輪廓函 數P的方法。 藉由計算出用來表達光學系統（步驟5)的零位函數</> 和a而建立一個圖表。 然後，經由前述方程式（1)而計算出光強度1(步驟6)。 重複步驟5和6直到完成對整個區域光強度的計算（步 驟7 )。 利用如是計算得跨越整個區域的光強度分布，則能經 由前述方程式（2)而計算出跨越整個區域的輪廓函數（步 驟8 )。 於習知方法中，吾人必需在計算了跨越整個區域的光 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------裝---------訂，‘--------線 (諝先閲讀背面之泫意^項再填寫本頁) A7_41.2662_B7五、發明說明（4 ) 積 旋 回 的 布 分 度 強 光 及 以 執區 低存 降儲 了的 為大 ，掻 時有 同需 Οίβί 題人 問吾 的 ! 間差 數時誤 函算定 斯計確 高長不 出冗的 算到時 計遇分 後而積 之因旋 度，酒 強分行 此 因 算 計 的 ίυ ? 筛 節 細 微 之 〇 布間 分時 度算 強計 光的 關長 有了 行成 執造 便步 以一 域進 逑 總 明 發 輪 阻 光 的 間 時 算 短 縮。 夠统 能糸 種算 一 計 供廓 提輪 是阻 的光 目與 的法 明方 發算 本計 廊 念 概 1 第 的 明 發 ： 本驟 據步 根下 以 括 包 法 方 算 計 駒 輪 阻 光 S— 種 方 的 零 入 填 内 域 區 展 擴及 所以 於 並數 倍函 三位 伸零 延的 度統 長条 散學 擴光 使展 依擴 式 旋 0 的 s ο 數算 函計 斯的 高廊 與輪 數阻 函光 位行 零執 的以 統數 糸函 學位 光零 行新 施的 從到 用得 利分 積 :驟 有步 驟的 步表 的圖 括鵪 包一 濁立 方建 算數 計函 廓位 輪零 阻的 光統 種糸 一 學 -光 是算 好計 最以 迴 的 數 函 ’ 斯驟 高步 與的 數表 函圖 位之 零成 的構 統數 条函 學位 光零 行新 實的 由到 锢得 一 所 生分 産積 旋 (請先閱讀背面之注意事項再填寫本頁) 裝.-------訂：！------線 經濟部智慧財產局員工消費合作社印製 光 出 算 計 表 圖 的 成 構 數 函 位 零 新及 及以 ; 數驟 你步 射的 透數 罩函 遮廓 從輪 胆 括 包 統 0 条 驟算 步計 的廓 數輪 函龃 廓光 輪種 阻一 光， 算念 計概 複二 Ms 域的 區明 锢發 整本 越據 跨根 展 舆 嫌及數 所以函 於；位 並數零 倍函的 三位統 伸零糸 延的學 度統光 長糸行 散學實 擴光從 使展用 依擴利 於式於 用方用 倦的係 ，零 * 置入置 裝埔裝 些内些 一 域 一 區 本紙張尺度適用中國國家標準（CNS)A4規格（2】0^ 297公复） 412662 A7 B7_______ 五、發明說明（4 ) 高斯函數的迴旋積分得到的新零位函數以執行光阻輪廓 的計算》 根據本發明的第三槪念，提供了 一種用來儲存程式的 媒體以便藉由電腦執行光阻輪廓的計算，其中的程式包 括： 使擴散長度延伸三倍並於所擴展區域內塡入零的方式 擴展光學系統的零位函數； 利用從實行光學系統的零位函數與高斯函數的迴旋積 分得到的新零位函數以執行光阻輪廓的計算。 圖式簡述 本發明可藉下列參照附圖所作的詳細說明而獲敌更完 全的了解，所附圖表僅供解釋和理解用而不能想成本發 明之限制。 第1圖係用以解釋一種用於校正零位函數邊界之方 法的圖示。 第2圖係用以解釋一種藉由本發明之方法計算輪廓函 數P的流程圖。 第3圖係用以顯示具有根據本發明計算系統形式之較 佳實施例結構的方塊圖。5. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^^ 41266 |; _ DESCRIPTION OF THE INVENTION (/) FIELD OF THE INVENTION The present invention relates to a photoresistance contour calculation method and a photoresistance contour calculation system. Description of related technology In the simulation of optical proximity effect correction (opc) by lithography, the impedance must be calculated at high speed. So * there is a way to approach the calculation by contours created by sharing light intensity distributions with certain thresholds on the wafer. In the example of exposure using a hafnium fluoride excimer laser, a resistive material that is chemically amplified to achieve high-resolution characteristics is used instead of the conventional _ no obo lac -type photoresist. In the chemically amplified resistive material, the effect of the acid on the diffusion effect in the heat treatment diffusion process (post-baking) is very significant. In order to take this effect into account, there is a method that uses the contour function P derived from the light intensity distribution I and the convolutional integral of the Gaussian function g, and is based on the equivalent of the contour function P established by sharing the threshold function P with a certain threshold. The impedance is calculated based on the line, as published by Hiroshi Fukuda, Keiko Hattori, et al. In SPIE, vo]. 3 3 34, p. 1 56- 1 62, 1 9 8 8 "Quasi-Physics for Fast Impedance Profile Simulation Model, and the importance of lens aberration and acid diffusion in LSI pattern design (Quasi-physical model for fast resist contour simulation, importance of lens aberrations and acid diffusion in LSI pattern design) Revealed. As for the method used to calculate the light intensity on the wafer, YC Pati, this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------ * ----— l · — Order i! — · Negotiation 1 — (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 = ^^^ at — _B7 _ 5 2. Description of the invention (>) Υ · τ · ¥ aug, JW · Lian, and T. Kailath et al., Published in SPIE, vol. 2 197, p. 3 〖Mask for phase shift: "Phase-shifting Mask: Automated Designand M ask R equireent" paper shows a variety of methods. We can use the following equation to calculate the light intensity distribution i (x, y) on the wafer using the masked transmission coefficient t and the zero function and α that represent the characteristics of the step-up optical system. I (x, y) = Iak | (t * φ k) (x, y) [2 (1) where (t * pk) (x, y) represents the round-robin integral of t and < pk The contour function P obtained by the diffusion of the acid in the impedance material chemically amplified is derived through the following equation Gaussian function g and light intensity distribution I. P (x.y) = (g * i) (x.y) (2) The method of calculating the contour function P according to the conventional method will be discussed in accordance with the flowchart in FIG. 4. A graph is created by calculating the null functions < / > and a to represent the optical system (step 5). Then, the light intensity 1 is calculated via the aforementioned equation (1) (step 6). Repeat steps 5 and 6 until the calculation of the light intensity for the entire area is completed (step 7). Using the light intensity distribution calculated across the entire area, the contour function across the entire area can be calculated by the aforementioned equation (2) (step 8). In the conventional method, we must calculate the size of the light paper across the entire area to apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------- install- -------- Order, '-------- Line (read the intention ^ item on the back before filling this page) A7_41.2662_B7 V. Description of the invention (4) Distribution of the product The degree of strong light and the low storage area of the holding area are the same, and there is a need at the same time. The person asks me! When the difference is miscalculated, the calculation is indeed high and the calculation is not redundant. And due to the rotation of the product, the Jiuqiang branch calculates the ίυ? The sieve section is small and the time between the cloths is counted. The chief of the meter has a successful implementation and will step into the total Ming round. The blocking time is shortened. Enough to be able to calculate a solution for the profile of the lifting wheel is the light and the law of the law and the method of the calculation of the concept of the first section of the law: This step is based on the method of calculation and calculation of the wheel resistance Light S—The expansion of the zero-filled in-field area of the seed square and the extension of the three-dimensional extension of the three-dimensional zero-span extension of the system, which makes the extension dependent on the s θ of the expansion function. The high corridor and the round resistance function of the light position are based on the statistical function of the degree of light. The new implementation of the new application from the profit to the product: a step-by-step diagram of the step chart includes the quail cube and the turbidity cube. A study of the optical system of the zero-resistance profile wheel with zero resistance-light is the most accurate mathematical function that can be counted ', and the structure of the numerical table function is calculated as a fraction of the number of chart functions. The new real-life from the first to the birth of a spin-off product (please read the precautions on the back before filling out this page) installed .------- Order :! ------ Constitutes and functions of the printout table chart printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs; Including 0 pedometers, pedometers, rounds, and light wheels, which block one light, and the calculations are duplicated in the second Ms domain. The three-dimensional system with zero multiples extends the length of the system, the length of the system, the length of the system, and the spread of learning. From the system that uses exhibitions to expand the use of the system to the user's fatigue, zero * Some of these papers are in one domain and one area. The paper scale is applicable to the Chinese National Standard (CNS) A4 specification (2) 0 ^ 297 public reply. 412662 A7 B7_______ V. Description of the invention (4) The new zero position function obtained by the convolution integration of the Gaussian function is Performing the calculation of the photoresistance profile "According to the third concept of the present invention, a medium for storing a program for calculating the photoresistance profile by a computer is provided. The program includes: extending the diffusion length by three times and Expansion in the extension area Zero optical system function; calculating resist profile with the new zero position obtained from the integral function to implement the swirling function is zero Gaussian function of the optical system to perform. Brief Description of the Drawings The present invention can be more fully understood by the following detailed description made with reference to the accompanying drawings. The attached drawings are for explanation and understanding only and cannot be considered as a limitation of the invention. Fig. 1 is a diagram for explaining a method for correcting a boundary of a null function. Fig. 2 is a flowchart for explaining a contour function P calculated by the method of the present invention. Fig. 3 is a block diagram showing the structure of a preferred embodiment in the form of a computing system according to the present invention.
第4圖係用以解釋一種藉由習知方法計算輪廓函數P 的流程圖。 較佳窗施例的說明 以下將參照附圖以較佳實施例詳盡地討論本發明。於 下述說明中，列舉了很多特殊的細節以提供對本發明的 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I---—— — — — — — J ------1 — 訂，-------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 412662 A7 B7____ 五、發明說明（r ) 歡底理解。不過’很明顯地熟悉習用技術的人應該能在 沒有這些特殊細節下施行本發明。於其他實例中，不再 詳盡地顯示吾人所熟知的結構以避免對本發明產生不必 要的含糊印象。 首先’吾人將要討論一種根據本發明施行光阻輪廓計 算之方法和系統的較佳實施例。 吾人可以利用定義如下的迴旋積分爲基礎上以積分符 號修正前述方程式（1): Ι(χ) = Σαλ S t(x-p)t*(x-p) ^^(χ) ^t*(x)dp (3) 其中，各參數都是表爲像X = (x，y)，p = (px,py)之類的向量形 式。另一方面，*代表的是共軛複數。 將方程式（3)代入前述方程式（2)內的I(x)，則輪廓函數 P (X )可以表爲： Ρ(χ) = Σα^ϊ J t(x-p)t*(x-p)^i(x)^jl*(x)g(x-q)dpdq (4) 其中，由於高斯函數是一個實變數函數，故能夠將之分 解成如下形式的共軛複數： g(x) = g(x) l/2{g(x) 1/2}* (5) 以方程式（5)取代前述方程式（4)中的g(X)， Ρ(χ) = Σα^ ί t(x-p)t*(x-p) ¢) ^(xigix-q) 1/2 { ί5 *(x)g(x-q) I/2} *dpdq (6) 接著’將參照第1圖討論一種用於切換前述方程式（6) 之積分順序以校正零位函數p邊界的方法。 首先，能夠將零位函數P的大小決定爲光學鄰近效應 的範圍d’而使落在d以外區域內的零位函數φ趨近於 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） — 111---------------L I 訂， (諳先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 412662 Α7 Β7 五、發明說明（6 ) 〇。接著，假定在依靜態方式將擴散長度取爲口下也能夠 使落在3σ以範圍外的高斯函數趨近於0° <請先間讀背面之注意事項再填寫本頁) 據此，藉由將如第1圖所示的零位函數邊界拓寬爲 3σ並於拓寬部分內塡入零’則能夠去除邊界在施行迴旋 積分時造成的影響。藉由以零位函數切換前述方程式（6) 之積分順序，而以下列方程式計算出輪廓函數ρ(χ)。 Ρ(χ) =Σαλ J S ΐ(χ-ρ)ΐ*(χ-ρ)Φ*(χ)Φ^ (x)*dp = Σπ* I (ί*Φ)(χ) I 2 (7) 其中，是將 φ(χ) = (卢*g1/2)(x) (8) 定義成一個新零位函數 接著，將要討論本發明較佳實施例的作業。 以計算代表光學系統特徵的零位函數P和α建立一個 圖表（步驟1 )。 產生一個由實行光學系統的零位函數與高斯函數的迴 旋積分所得到新零位函數構成的新圖表（步驟2)。 經由前述方程式（7)從遮罩透射係數t以及由新零位函 數構成的圖表計算出光阻輪廓函數P(x)(步驟3)。 經濟部智慧財產局員工消費合作社印製 跨越整個區域重複計算光阻輪廓函數（步驟4)。 第3圖係用以顯示實行如第2圖所示本發明較佳實施 例的簡略方塊圖。 於第3圖中，零位函數圖表產生部分11會執行第2圖 的步驟1而藉由計算代表光學系統特徵的零位函數p和 α以建立一個圖表。 本纸張尺度適用尹國國家標準（CNS)A4規格（210x297公釐） 經濟部智慧財產局員工消費合作社印製 A7 -~^--- 五、發明說明（7 ) 新零位函數圖表產生部份12會執行第2圖的步驟2而 利用新零位函數φ的圖表由零位函數和高斯函數g產生 一個新的圖表。 光阻輪廓函數計算部分會執行第2圖的步驟3而跨 越整個區域由遮罩的透射係數以及新零位函數重新執行 光阻輪廓函數P的計算。 CPU 14是用來執行各別部分〗】-13之作業控制中央處 理單位並根據原先儲存於記億體1 5內的作業控制程式執 行對個別部分11 -13的控制。吾人應該注意的是能夠以唯 讀儲存媒體當作記憶體1 5 » 於本發明中，利用光學鄰近效應的範圍以高斯函數的 本質，能夠使酸在化學應用光阻上產生的效應結合於代 表光學系統特徵的零位函數內以便利用這種零位函數執 行光阻輪廓的計算而對縮減計算時間作出貢獻。 同時於習知方法中，爲了降低執行迴旋積分時的不確 定誤差，吾人必需執行有關光強度分布之微細篩孔的計 算。相反地於本發明中，吾人能夠以任意的篩孔達成施 行輪廓函數直接計算的能力。所以，能夠使所需要的儲 存區域變得極小。這麼做也會達成縮減計算時間的目的。 如上所述根據本發明，由於原先是以高斯函數對零位 函數執行迴旋（convolution)計算，故變得不需要在計算光 強度分布之後執行迴旋積分而能夠直接從零位函數計算 出來，且因此縮減了計算時間。 雖然本發明完全是參照其中的解釋用實施例而加以顯 本紙張尺度適用令國國家標準（CNS)A4規格<210 X 297公釐） I----111 I I---------- — ----—-----I (請先閱讀背面之注*華項再填寫本頁) 412662 A7 B7_____ 五、發明說明（/ ) 示和描述，且熟悉習用技術的人應該能夠理解前述以及 各種變化亦即能在其上施行的放射以及疊加作用都不致 偏離本發明的精神及架構。所以’應該了解本發明並不 局限於上述的特定實施例，而是使所有可能實施例涵藏 於與本發明所附申請專利範圍的相關架構以及其等效範 圍內。 符號說明 1 1…零位函數圖表產生部分 12…新零位函數圖表產生部分 13…光阻輪廓函數計算部分 14…中央處理單位 15…記憶體 ----------I ί -------*1 訂---------線I ' (請先閱讀背面之注項再填窝本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐）FIG. 4 is a flowchart for explaining a contour function P calculated by a conventional method. Description of Preferred Window Embodiments The present invention will be discussed in detail below with reference to the accompanying drawings and preferred embodiments. In the following description, many special details are enumerated to provide the Chinese paper standard (CNS) A4 specification (210 X 297 mm) applicable to the paper size of the present invention. I ------------J- ---- 1 — Order, ------- line (please read the notes on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 412662 A7 B7____ V. Description of Invention (r) Huan Understand. However, it is obvious that one skilled in the art would be able to practice the invention without these specific details. In other instances, structures that are well known to me are no longer shown in detail to avoid creating an unnecessarily vague impression of the invention. First, we will discuss a preferred embodiment of a method and system for performing photoresistance contour calculation according to the present invention. We can use the convolution integral defined as follows to modify the aforementioned equation (1) with the integral sign: Ι (χ) = Σαλ S t (xp) t * (xp) ^^ (χ) ^ t * (x) dp ( 3) Among them, each parameter is represented by a vector form like X = (x, y), p = (px, py). On the other hand, * stands for complex conjugate number. Substituting equation (3) into I (x) in the aforementioned equation (2), the contour function P (X) can be expressed as: P (χ) = Σα ^ ϊ J t (xp) t * (xp) ^ i ( x) ^ jl * (x) g (xq) dpdq (4) Among them, since the Gaussian function is a real variable function, it can be decomposed into a conjugate complex number of the form: g (x) = g (x) l / 2 {g (x) 1/2} * (5) Replace g (X) in the aforementioned equation (4) with equation (5), Ρ (χ) = Σα ^ ί t (xp) t * (xp) ¢) ^ (xigix-q) 1/2 {ί5 * (x) g (xq) I / 2} * dpdq (6) Next, we will discuss an integration sequence for switching the aforementioned equation (6) with reference to FIG. 1 To correct the p-boundary of the zero function. First, the magnitude of the zero-position function P can be determined as the range d 'of the optical proximity effect, so that the zero-position function φ falling in a region other than d approaches the paper standard applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) — Ordered at 111 --------------- LI, (谙 Please read the notes on the back before filling out this page) Printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 412662 Α7 Β7 5. Description of the invention (6) 〇. Next, it is assumed that the Gaussian function falling outside the range of 3σ can be approached to 0 ° by taking the diffusion length as the mouth in a static manner < please read the precautions on the back before filling this page) By broadening the boundary of the zero-position function as shown in Figure 1 to 3σ and entering zero within the widened portion, the influence of the boundary when performing the round integral can be removed. By switching the integration order of the aforementioned equation (6) with a zero function, the contour function ρ (χ) is calculated with the following equation. Ρ (χ) = Σαλ JS ΐ (χ-ρ) ΐ * (χ-ρ) Φ * (χ) Φ ^ (x) * dp = Σπ * I (ί * Φ) (χ) I 2 (7) where Is to define φ (χ) = (Lu * g1 / 2) (x) (8) as a new zero function. Next, the operation of the preferred embodiment of the present invention will be discussed. Create a chart by calculating the null functions P and α representing the characteristics of the optical system (step 1). Generate a new chart consisting of the new null function obtained by performing the cyclotron integration of the null function and Gaussian function of the optical system (step 2). The photoresist profile function P (x) is calculated from the mask transmission coefficient t and a graph composed of the new zero function via the aforementioned equation (7) (step 3). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Repeat the calculation of the photoresistance contour function across the entire area (step 4). FIG. 3 is a simplified block diagram showing the implementation of the preferred embodiment of the present invention as shown in FIG. In Fig. 3, the zero function chart generating section 11 performs step 1 of Fig. 2 to calculate a zero function p and α representing the characteristics of the optical system to create a chart. This paper size applies Yin National Standard (CNS) A4 specification (210x297 mm). Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. A7-~ ^ --- V. Description of the invention (7) New zero function chart generation department Part 12 will perform step 2 of Figure 2 and use the graph of the new null function φ to generate a new graph from the null function and Gaussian function g. The photoresist contour function calculation part will perform step 3 in FIG. 2 and re-perform the calculation of the photoresist contour function P across the entire area by the transmission coefficient of the mask and the new zero function. The CPU 14 is used to execute the respective parts of the operation control central processing unit -13] and executes the control of the individual parts 11 to 13 in accordance with the operation control program originally stored in the memory unit 15. I should note that a read-only storage medium can be used as the memory 1 5 »In the present invention, the range of the optical proximity effect is based on the nature of the Gaussian function, and the effect of the acid on the photoresist of chemical applications can be combined with the representative The zero-position function of the characteristics of the optical system is used to perform calculation of the photoresist profile using this zero-position function, thereby contributing to reducing the calculation time. At the same time, in the conventional method, in order to reduce the uncertainty error when performing the convolution integration, we must perform the calculation of the fine mesh of the light intensity distribution. In contrast, in the present invention, we can achieve the ability to directly calculate the contour function with an arbitrary screen. Therefore, the required storage area can be made extremely small. This will also achieve the purpose of reducing the calculation time. According to the present invention as described above, since the convolution calculation was originally performed on the null function with a Gaussian function, it becomes unnecessary to perform convolution integration after calculating the light intensity distribution, and it can be directly calculated from the null function, and therefore Reduced calculation time. Although the present invention is fully explained with reference to the embodiments for explanation, the paper size is applicable to the national standard (CNS) A4 specification < 210 X 297 mm) I ---- 111 I I-- ---- — ----—----- I (Please read the note on the back * Hua Xiang before filling out this page) 412662 A7 B7_____ V. Description and description of the invention (/), and familiar with conventional technology One should be able to understand that the foregoing and various changes, that is, the radiation and superposition effect that can be performed on it, will not deviate from the spirit and structure of the present invention. Therefore, it should be understood that the present invention is not limited to the specific embodiments described above, but that all possible embodiments are contained within the relevant framework and equivalent scope of the scope of patents attached to the present invention. Explanation of symbols 1 1 ... Zero function chart generating section 12 ... New zero function chart generating section 13 ... Photoresistance contour function calculating section 14 ... Central processing unit 15 ... Memory ---------- I ί- ------ * 1 Order --------- Line I '(Please read the note on the back before filling in this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives Paper size applies to China National Standard (CNS) A4 Specification (210 X 297 Meals)