TW410291B - A data processing system integrating basic input/output system and system memories - Google Patents

A data processing system integrating basic input/output system and system memories Download PDF

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TW410291B
TW410291B TW88100546A TW88100546A TW410291B TW 410291 B TW410291 B TW 410291B TW 88100546 A TW88100546 A TW 88100546A TW 88100546 A TW88100546 A TW 88100546A TW 410291 B TW410291 B TW 410291B
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Taiwan
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address
volatile memory
sector
readable
memory
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TW88100546A
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Chinese (zh)
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Yung-Lang Huang
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Acer Inc
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Abstract

The present invention discloses a data processing system integrating basic input/output system (BIOS) and system memories. The system includes a read/write nonvolatile memory for storing the system data in the first bank, the third bank and the fourth bank as well as the BIOS in the second bank of the nonvolatile memory, in which the addresses of the first bank, the third bank and the fourth bank are defined to be continuous and the addresses of the third bank and the second bank are defined to be identical; an address bus used to transmit the accessing address issued by the system; and a decoding device electrically connecting with the read/write nonvolatile memory and the address bus. The decoding device maps the second bank of the read/write nonvolatile memory in response to the BIOS selection signal as the first logical index and its accessing address, the third bank of the nonvolatile memory in response to the accessing address as the second bank address and the BIOS selection signal as the second logical index, maps the first bank of the nonvolatile memory in response to the accessing address as the first bank address, and map the fourth bank of the nonvolatile memory in response to the accessing address as the fourth bank address. The above-mentioned mapping is used for the system to access the mapped bank.

Description

410291 五、發明說明(l) 發明領域: 本發明係與電子產品的基本輸出入系統_關之 系統’特別是指在電子產品中’將基本輸出入系統儲存於 系統記憶體之系統。 · 發明背景:410291 V. Description of the invention (l) Field of the invention: The present invention relates to the basic input / output system of electronic products. The system "especially refers to the system for storing basic input / output systems in system memory in electronic products." · Background of the invention:

Q 心著科技日新月異的進步,筆記型電腦及掌上型數位電子 產品受到極廣泛的運用。對於一般資料處理系綠,如個入 電腦或其他消費性電子產品而言,通常需要一基本輸出入 系統(Basic Inp.ut/Output System, BIOS),用.以在開機 的時候管理啟動時的一些程序,例如電腦啟動時的自我測 試程式(power-on self-test)、以及磁碟機、鍵盤、螢幕 等低階設定’ ϋ提供一些控制供各種與電腦連接設備的軟 體支板。此外’該系統尚需要各種形式之儲存裝置(如硬 碟等),用以儲存操作系統(〇s)及其他的應用軟體,作為 提佐該系統其比功能之用c …' · 對於消費性電子產品,諸 政雷1. j 古,由於其通當僅乱凑如肩路電視或術星電視接收器而 °由於其通吊僅執行特定之工力:能』,故、並不需要像一般的 只需小塞旦的印,κ壯更碟來儲存許夕龐大的應用程式,而 可。m i卜里習4 =二置用來儲存特定用途之軟體程式即 * α的消費性電子產品通常利用一些存取速度Q. With the rapid progress of technology, notebook computers and handheld digital electronic products are widely used. For general data processing systems, such as personal computers or other consumer electronics products, a basic input / output system (Basic Inp.ut / Output System, BIOS) is usually required to manage the boot time when booting. Some programs, such as power-on self-test when the computer starts up, and low-level settings such as drives, keyboards, screens, etc. ϋ Provide some software support boards for various devices connected to the computer. In addition, 'the system still needs various forms of storage devices (such as hard disks, etc.) to store the operating system (0s) and other application software, as a reference to the specific function of the system c ...' · For consumer Electronic products, Zhu Zhenglei 1. j ancient, because its communication only messes up like a shoulder TV or a satellite TV receiver ° because its communication only performs a specific work force: can ', so there is no need to Generally, it only needs the seal of Little Zedan, and the Kappa disk can store Xu Xi's huge applications. m i Brix 4 = two sets of software programs used to store specific purposes i.e. α consumer electronics usually use some access speed

410291 五、發明說明(2) 較快之非揮發性記憶體(Ν ο n v ο 1 a't i 1 e m e m 〇 r y〉,例如快閃 記憶體等來做為一記憶裝置。此外,由於消費性電子產品 的架構較一般通用(General purpose)的電腦系統簡化, 所以習知的ISAUndustry Standard Architecture)架構 便足堪使用’但是因為I S A位址匯流排(A d d r e s s b u s )為2 4 位元,故可支援到1 6MB的記憶體。 請參照萆一圖’該圖所顯示的為習知消費性電 '子產品所使 用的記憶體存取方塊圖,其係在1 6MB的記憶體中,利用 j DRAM作為位址0 0 0 0 0 p~7FFFFF之儲存場所,,而位址 ^ 8 0 0 0 0 0 ~ F F F F F F之儲存場所則利用四.個快閃記憶體之記憶 體晶片1 0 2、1 0 4、1 0 6、1 0 8來組成。在第二圖中的記憶體 晶片1 0 2、1 0 4、1 0 6、1 0 8係經由I S A資料排線與中央處理 器進行資料傳遞,而解碼裝置1 0 0則分別與記憶體晶片 1 0 2、1 0 4、1 0 6、1 0 8 ’以四條晶片選擇訊號 (R0MCS1#〜R0MCS4#)栢接。解碼裝置100包含一解碼器 110 ’其分別對應到四個解碼區(因為有四個記憶體晶 片),並分別喇用所耠出的晶片選捍訊-號5用以指定記憶― 體晶片1 0 2, 1 0 .4, 1 0 6與1 0 8中的被選取者。基本輸出人系^! 統έ己憶體1 2.0則經由I SA位址排線.輸入所指定之位址,.更經 * XD排線做輸出入之操作。應]注意的是,基本輸出入系統 記憶體1 2 0係受控於一基本輸出入晶片選擇訊號 1 (BI0SCS#) ’並於BI0SCS#爲0時'啟動,以進行基本輸出入 系統之擷取操作。.乂410291 V. Description of the invention (2) Faster non-volatile memory (N ο nv ο 1 a't i 1 emem 〇ry>), such as flash memory, etc. as a memory device. In addition, due to consumer The architecture of electronic products is simpler than general purpose computer systems, so the conventional ISAUndustry Standard Architecture architecture is sufficient. However, because the ISA address bus (Addressbus) is 24 bits, it can support To 1 6MB of memory. Please refer to the first diagram 'The diagram shows the memory access block diagram used by the conventional consumer electronics' sub-product, which is in 16 MB of memory, using j DRAM as the address 0 0 0 0 0 p ~ 7FFFFF storage place, and the address ^ 8 0 0 0 0 0 ~ FFFFFF storage place uses four. Flash memory memory chip 1 0 2, 1 0 4, 1 0 6, 1 0 8 to make up. In the second figure, the memory chip 10, 102, 104, 106, 108 is used for data transmission with the central processing unit via the ISA data cable, and the decoding device 100 is separately connected to the memory chip. 1 0 2, 1 0 4, 1 0 6, 1 0 8 'The four chip selection signals (R0MCS1 # ~ R0MCS4 #) are connected. The decoding device 100 includes a decoder 110 'which corresponds to four decoding areas (because there are four memory chips), and uses the selected chip selection signal-No. 5 to specify the memory-the body chip 1 Selected persons in 0 2, 1 0.4, 10 6 and 108. The basic output system is ^! The system has 12.0 memory, which is routed through the I SA address. Enter the designated address, and use the * XD cable to do the input and output operations. It should be noted that the basic I / O system memory 12 is controlled by a basic I / O chip selection signal 1 (BI0SCS #) 'and activated when BI0SCS # is 0' for the basic I / O system's capture. Take operation. . 乂

41G29141G291

第6頁 4-10.291 五、發明說明(4) 出之存取位址;一解碼裝置,電連接於該可讀寫非揮發性 記憶體及該位址匯流排,該解碼裝置因應於一基本輸出入 系統選擇訊號為第一邏輯位準及該存取位址,對該可讀寫 非揮發性記憶體第二區段進行對映,因應於該存取位址為 該第二區段位址及該基本輸出入系統選擇訊號為第二邏輯 位準時,對該可讀寫非揮發性記憶體第三區段進行對映, 因應於該存取位址為該第一區段位址時,對該可讀寫非揮 發性記憶體第一區段進行對映,.因應於該存取位址為該第 四區段位址時,對該可讀寫非揮發性記憶體第四區段造行 對映;其中上述之該對映係用.以使系統對該對映之區段進 — 行存取。 圖式簡單說明: 藉由以下詳細之描述結合所附圖示,將可輕易的了解 上述内容及此項發明之諸多優點,其中: 第一圖所顯示為習知消費性電子產品所使用的記憶體存取 - 方現[網。其γ該糸統記憶體與基冬輸ίϋ入乐命g兄億體係夺 自分開; » . / 第二圖所顯示為本發明之第一個較佳實施例的記憶體存取 方塊圖,其中系統記憶艟與基本輸出入系統記憶體係結合 在一起; , 第三圖所顯示在本發明之系統記憶體中,儲存基本輸出入 系統時之記憶體内部結構圖; 、Page 6 4-10.291 V. Explanation of the invention (4) Access address; a decoding device electrically connected to the readable and writable non-volatile memory and the address bus. The decoding device is based on a basic The input / output system selects the signal as the first logic level and the access address, and maps the second sector of the readable and writable non-volatile memory, so that the access address is the second sector address. And when the basic input / output system selects the signal as the second logic level, the third sector of the readable and writable non-volatile memory is mapped, so that when the access address is the first sector address, The first sector of the readable and writable non-volatile memory is mapped. When the access address is the fourth sector address, the fourth sector of the writable non-volatile memory is executed. Mapping; the above-mentioned mapping system is used to make the system access to the mapping section. Brief description of the drawings: The above-mentioned content and the many advantages of this invention can be easily understood through the following detailed description combined with the attached drawings, of which: The first picture shows the memory used in conventional consumer electronic products. Body Access-Fang Xian [Net. The memory of this system is separate from the system that Kedong loses and enters the life system; ». / / The second diagram shows the memory access block diagram of the first preferred embodiment of the present invention, The system memory 艟 is combined with the basic input / output system memory system;, The third figure shows the internal structure of the memory when the basic input / output system is stored in the system memory of the present invention;

410291 五、發明說明(5) _ 第四圖所顯不為本發明所揭露之第二個較佳實施例; 第五Λ圖所顯不為本發明之第—個較佳實施例所產生之對 應結果列表;及 第五β圖所顯示為本發明之第二個較佳實施例所產生之對 應結果列表; 圖示部份: 1 0 0 ' 21 0、41 0 :解碼裝置; 1 0 2、1 0 4、1 0 6、1 0 8 :記憶體晶片;410291 V. Description of the invention (5) _ The fourth picture does not show the second preferred embodiment disclosed by the invention; the fifth picture Λ does not show the result of the first preferred embodiment of the invention Corresponding result list; and the fifth β figure shows the corresponding result list generated by the second preferred embodiment of the present invention; the illustrated part: 1 0 0 '21 0, 41 0: decoding device; 1 0 2 , 104, 106, 108: memory chips;

110、225、425 :解碼器;' W 1 2 0 :基本輸出入系統記憶體_; 202、204、206、208:記憶體晶片; 215、415:組合邏輯裝置;及 230、430:位址轉換邏輯裝置。 發明詳細說明: 請參照第.二圖s .其描繪本發巧第—個較佳·=.實施例之記憶體 存取方塊圖。在第二圖之第一個較隹實施例中,亦在1 6 Μ B 3 的記憶體中’利用DRAM作為位址〇〇〇〇〇〇〜7FFFFF之儲存場 所’而位址800000〜FFFFFF之儲存場所則利用四個快閃記 憶體之記憶體晶片2 0 2、2 0 4、2 0 6、2 0 .8,以及容量為 128KB之BIOS為例來做說明,而BIOS亦同樣於BIOSCS#為0 時被啟動。事實上DRAM與快閃記憶體之總和為1 6MB,但兩110, 225, 425: decoder; 'W 1 2 0: basic input / output system memory_; 202, 204, 206, 208: memory chip; 215, 415: combinational logic device; and 230, 430: address Conversion logic device. Detailed description of the invention: Please refer to the second figure s. It depicts the memory access block diagram of the first preferred embodiment of the present invention. In the first comparative embodiment of the second figure, it also uses 'DRAM as a storage location of addresses 00000-00 ~ 7FFFFF' in the memory of 16 MB3 and addresses 800000 ~ FFFFFF. The storage location uses four flash memory chips 20, 20, 2, 4, 6, 0.8, and a 128KB BIOS as an example. The BIOS is also the same as BIOSCS #. It is started when it is 0. In fact, the sum of DRAM and flash memory is 16 MB, but two

410291 五 '發明說明¢6) 者之使用數量及晶片之數目可隨應用而有所調整。 在第二圖之本發明第一個較佳實施例中,記憶體晶片 202、20 4、206、2 08除了與解碼裝置21 〇相連之外,亦經 由I SA資料排線與中央處理器進行資料傳遞。以β I Os為 1 2 8KB為例(實際應用可因不同需要而增減),並將BI〇.s 儲存在記憶體..晶片20 2位址9E0 0 0 0 '9FFFFF中,因此記憶體 晶片202所剩下的儲存空間只剩2.M — 128ΚΈ。解碼裝、置210 則以四條晶片選擇訊號線(R0MCS1#〜R0MCS4#)分別與上述 四個記憶'體晶片·2 〇2、2 q,4;::,.',2 〇巧、2 相接,._甩叫驅角將進 行存取之記憶體晶片。.. 解碼裝置2 1 0 .包含了一解碼器2 2 5、組合邏輯裝置2 1 5、以 及一位址轉換邏輯裝置2 3 0。解碼器2 2 5包括五個解碼區 (Dl、D2、D3、D4、與DB),用以將ISA位址進行解碼,以 獲知該I S A位址與哪一個解碼區相對應。解碼器2 2 5之解碼 區DB、Dl、D2所產生的對應結果MB#、Ml#、M2#將送往组 合邏輯裝置2 1 5做進一步的比對,而解碼區D3 .與D4的對應 結果則直接透過晶片選擇訊號線R 0 M C S 3 #與R 〇 M C S 4 #,分別 饋入至記憶體.萬片2 0 6與2 0 8之中。再者,組合邏輯裝置 215除f輸入對應結果MB#、Ml#、M2#之外,亦受控於基本 給出入晶只’撰摆irmTOSCS#,用以產峰总Η壤煜訊输 R0MCS1#與R0MCS2#,並分別饋入至記憶體晶片2 0 2及204 中’用以決定記憶體晶片2 0 2與2 0 4是否被選取。410291 Five 'Invention Note ¢ 6) The number of use and the number of chips can be adjusted according to the application. In the first preferred embodiment of the present invention in the second figure, the memory chips 202, 20 4, 206, and 20 08 are connected to the decoding device 21 〇, and are also carried out through the I SA data cable and the central processing unit. Data transfer. Take β I Os as 1 2 8KB as an example (the actual application can be increased or decreased due to different needs), and store BI0.s in the memory .. chip 20 2 address 9E0 0 0 0 '9FFFFF, so the memory The remaining storage space of the wafer 202 is only 2.M-128KΈ. For the decoding device and device 210, four chip selection signal lines (R0MCS1 # ~ R0MCS4 #) are respectively connected with the above four memory chips '2, 2, 2, q, 4;: ,,', 2 0, and 2 phases. Then, the memory chip that will be accessed by ._squeeze drive. The decoding device 2 10 includes a decoder 2 25, a combination logic device 2 1 5 and a bit address conversion logic device 2 3 0. The decoder 2 2 5 includes five decoding areas (D1, D2, D3, D4, and DB) for decoding the ISA address to know which decoding area the I A A address corresponds to. The corresponding results MB #, Ml #, and M2 # generated by the decoding areas DB, D1, and D2 of the decoder 2 2 5 will be sent to the combinational logic device 2 1 5 for further comparison, and the decoding area D3. D4 corresponds to D4. As a result, the signal lines R 0 MCS 3 # and R 〇MCS 4 # are directly fed into the memory through the chip selection signal lines R 0 MCS 3 # and R 0 MCS 4 #, respectively. In addition, in addition to the corresponding input results MB #, Ml #, and M2 #, the combinational logic device 215 is also controlled by the basic given input crystals, “irmTOSCS #”, which is used to produce peak total soil and Yuxin lose R0MCS1 # and R0MCS2 #, and feed them into the memory chips 202 and 204, respectively, to determine whether the memory chips 202 and 204 are selected.

第9頁 410291 五、發明說明(7) 請參閱第五A圖,其描繪對應結果MB#、Ml#、M2#依據所輸 入的IS A位址與B I 0 S C S #而產生的輸出對應表;此外,在第 五:A圖之圖表中’亦列出R〇MCSl#、R0MCS2#因應於上述對 應結果所輪出之邏輯位準。當I SA位址係指向儲存於記憶 體晶片202中的80 0000〜9肿?卩卩之系統資料區、且]^1〇$(:^ 為1時’所對應到的將為'解碼區D1而使Μ1 #為0,同時μ b #與. M2#皆為1 ;此時的R0MCS1#與R0MCS2#將分別為0與1,以使 έ己憶體晶片2 0 2能被驅動只讀出系統資料。當I $ a位址落在 = AOOOOO-BDFFFF之範圍、且BI0SCS#為1時,因為此時·所存 年的為未與解碼區DB重疊的D2區’所以M2#將降為〇、而 MB#與Ml#則為1 ’ .同時使得R〇MCSl#為1、而R0MCS2#為〇, 用以啟動記憶體晶片2 0 4讀出系統資料。當ISA位址落在 9E 0 0 0 0〜9FFFFF之範圍、且BI0SCS#為1時,因為此時所存 取的為與解碼區D B重疊的D 2區,但由於同時對應到解碼區 DB與D2 ’所以〇#與M2#將同時降為〇、而Ml#則為1,同時 使得R0MCS1#為1、而R0MCS2#為〇,用以啟動記憶體晶片 2 〇 4續出系統資料。再者’當is a位—址係對應到解碼區时、 且Β I 0SCS#為0時’表示Β I 〇S資料將被存取,然而因此時送L 往解碼器225的ISA位址只有20條位址線(其他4條最高位址f 線皆為Bit 0),所以解碼器225事實上是解不出任何結果 的,所以MB#、Ml#、M2#皆為1。但是因為BI0SCS#為0,因 此R0MCS1#亦為〇 ’用以驅動記憶體晶片202讀出BIOS資 料。最後’當ISA位址所對應的為解碼區D3或D4,且Page 9 410291 V. Description of the invention (7) Please refer to the fifth chart A, which depicts the output correspondence table MB #, Ml #, M2 # according to the input IS A address and BI 0 SCS #; In addition, in the chart of the fifth: A chart, 'RoMCSl #, ROMCS2 #' is also listed in accordance with the logical level of the corresponding results. When the I SA address points to 80,000 ~ 9 swellings stored in the memory chip 202?系统 's system data area, and] ^ 1〇 $ (: When ^ is 1', the corresponding one will be 'Decoding area D1 and M1 # will be 0, and both μb # and .M2 # will be 1; this When R0MCS1 # and R0MCS2 # will be 0 and 1, respectively, so that the memory chip 2 0 2 can be driven to read out the system data only. When the I $ a address falls in the range of = AOOOOO-BDFFFF, and BI0SCS When # is 1, because at this time, the stored year is the D2 area that does not overlap with the decoding area DB, so M2 # will be reduced to 0, and MB # and Ml # will be 1 '. At the same time, RMCS1 # will be 1. And R0MCS2 # is 0, which is used to start the memory chip 2 0 4 to read the system data. When the ISA address falls within the range of 9E 0 0 0 0 ~ 9FFFFF, and BI0SCS # is 1, because the access at this time Is the D 2 area that overlaps with the decoding area DB, but because it corresponds to both the decoding area DB and D2 ′, 〇 # and M2 # will be reduced to 0 at the same time, and M1 # will be 1, while R0MCS1 # will be 1, and R0MCS2 # is 0, which is used to start the memory chip 2 04 to continue the system data. Furthermore, 'When is a bit-address is corresponding to the decoding area, and when B I 0SCS # is 0', it means B I 〇S data Will be accessed, but so send L to decode 225's ISA address has only 20 address lines (the other 4 highest address f lines are all Bit 0), so the decoder 225 can't actually solve any results, so MB #, Ml #, M2 # are all Is 1. However, because BI0SCS # is 0, ROMCS1 # is also 0 'to drive the memory chip 202 to read the BIOS data. Finally, when the ISA address corresponds to the decoding area D3 or D4, and

第10頁 410291 五、發明說明(8) BTOSCS# 為!時,則刪、M1#、M2#、_⑶#、議cs2# 皆 由於記憶體晶片202、204、206與2 08各包含2MB的位址, 所以僅需要21條位址線即可指到所有的位址。因此位址轉 換邏輯'裝置2,30在接收到ISA位址時僅需輸出21條位址線即 可。然而由於BIOS之位址僅有2〇條,從21_24位元皆為〇, 若依此BIOS位址傳送至記憶體晶月2〇2,將永遠只能送到 1 MB以下的位址’但本實施例中係將Bi〇s放在記憶體晶片 202中1 MB-2MB的位址,所以在第一個較佳實施例中,位址 轉換邏輯裝置230將在BI0SCS#為〇時,把所輸入之ISA位址 的第2 1位元之值從〇轉換為1 (但若將β丨〇s放在記憶體晶片 2 0 2中0MB -1 MB的位址則無須轉換),用以指向B丨〇s資料儲 存處。再者,當BI0SCS#為1時.,位址轉換邏輯裝置230將 依據IS A位址判斷是否需將存取位址加上2 〇 〇 〇 〇 h (丨2 8 KB), 用以指向系統.資料儲存處。 例如當I S A位址與解碼區D丨相對應時;位垃轉換邏輯裝置 2 3 0便將2 1位元的I s A位址(去掉最左方3個位元),送往記 憶體晶片202 ;當ISA位址係包含於解碼區D2、D3、D4時, 位址轉換邏輯裝置230便在21位元的ISA位址加上 · 2 0 0 0 0h(BIOS的容量128K) ’以產生存取位址後,送往記憶 癉晶片以存取系統資料。Page 10 410291 V. Description of the invention (8) BTOSCS # is! When deleting, M1 #, M2 #, _⑶ #, and cs2 # are all because the memory chips 202, 204, 206, and 2008 each contain 2MB addresses, so only 21 address lines can be used to point to all Address. Therefore, the address conversion logic 'devices 2,30 only need to output 21 address lines when receiving the ISA address. However, because there are only 20 BIOS addresses, from 21 to 24 bits, they are all 0. If the BIOS address is transferred to the memory crystal 002 according to this, it will always only be sent to addresses below 1 MB. In this embodiment, Bi0s is placed at an address of 1 MB to 2 MB in the memory chip 202. Therefore, in the first preferred embodiment, the address conversion logic device 230 will set the BIOSCS # to 0 when BI0SCS # is 0. The value of the 21st bit of the entered ISA address is converted from 0 to 1 (but if β 丨 〇s is placed in the 0MB -1 MB address in the memory chip 202, it is not necessary to convert) Point to B 丨 〇s data storage. Moreover, when BI0SCS # is 1, the address conversion logic device 230 will judge whether the access address needs to be added to 20000h (丨 2 8 KB) according to the IS A address to point to the system. . Data storage. For example, when the ISA address corresponds to the decoding area D 丨, the bit-rack conversion logic device 230 sends the 21-bit I s A address (remove the leftmost 3 bits) to the memory chip 202; When the ISA address is included in the decoding areas D2, D3, and D4, the address conversion logic device 230 adds a 2 0000 address to the 21-bit ISA address (200K of BIOS capacity) to generate After accessing the address, it is sent to the memory chip to access the system data.

^10291 五、發明說明(9) 事實上,:B 10 S在記憶體晶片由私Μ + 月中所儲存之位址,可視實際的 規劃而定。例如在第三圖中你沐彳 ' w γ位於1 MB以下之區域C,係用以 代表該1MB區間中之OEOOOO〜〇FFFFF位址;而位於2Μβ以下 之區域D ’則代表1MB〜2MB區域間21E〇〇〇〇〜1FFFFF實體位 址。在第二圖之第一個較佳實施例+,區域D為儲存m〇s 之區域,其用M28KB來儲存。由於在第二圖帽〇s所佔 用的為區域D ’因此區域D以外所儲存的便用來儲存資料系 統,然而系統資料在存取時不可產生資料不連續之情形 (例如存取軟體程式之程式碼)’所以必須利用位置轉換邏. 輯裝置230與組合邏輯裝置215來除去此一問題。再者,上^ 述之實施例雖以四個2MB的快閃記憶體做解說,妷而在實 用上卻可以其他容量的.快閃記憶體,例如運用兩個4Μβ的 快閃記憶體之記憶體晶片來實施本發明所揭露之内容,然 而位址轉換邏輯裝置230便需根據B I〇s所在的位址來轉換 ISA位址第22位元與第21位元(諸如0〇a〇MB—1Μβ、 ' 01alMB-2MB、10a2MB-3MB、lla3MB-4MB),來指向BI0S 所 本.¼本_邊明所揭露之技術內容 在的位址。明顯的,習知技術者可運用更多的高容量之快 閃記憶體,:晶片 — '、 謹再列舉一實例做進一步之解說。當欲存取由位址9E0 000 所指之系統資料時,因為9E0 0 0 0〜9FFFFF間所儲存的為 BIOS ’所以指向9E0 000的系統資料,事實上係儲存於記憶 體晶片303的第一個儲存格中。然而儲存於9E〇〇〇〇位址的 BIOS資料亦利用位址9EOOOO來指出,於是便發生位於^ 10291 V. Description of the invention (9) In fact, the address of B 10 S stored in the memory chip from the private M + month may depend on the actual planning. For example, in the third picture, you can see that the region C below 1 MB is used to represent the addresses OOOOOO ~ FFFFFF in the 1MB interval, and the region D 'below 2Mβ represents the 1MB to 2MB area. 21E〇〇〇〇〇 ~ 1FFFFF entity address. In the first preferred embodiment of the second figure +, the area D is an area for storing m0s, which is stored using M28KB. Because the area in the second figure is occupied by area D ', the data stored outside area D is used to store the data system. However, the system data cannot be discontinuous when it is accessed (for example, when accessing software programs). (Code) 'So it is necessary to use the position conversion logic 230 and the combination logic device 215 to eliminate this problem. Furthermore, although the above-mentioned embodiment is explained using four 2MB flash memories, it is practically available in other capacities. Flash memory, for example, uses two 4Mβ flash memories. To implement the content disclosed in the present invention by the chip, however, the address conversion logic device 230 needs to convert the 22nd and 21st bits of the ISA address (such as 0〇a〇MB— 1Mβ, '01alMB-2MB, 10a2MB-3MB, 11a3MB-4MB), to point to the location of the technical content disclosed by BIOS. Obviously, those skilled in the art can use more high-capacity flash memory: chip-', I would like to enumerate an example for further explanation. When you want to access the system data pointed to by the address 9E0 000, the system data pointed to 9E0 000 is actually stored in the first memory chip 303 because the BIOS is stored between 9E0 0 0 0-9FFFFF. Cells. However, the BIOS data stored at the 9E000 address is also pointed out using the 9E000OO address, so it occurs at

410291 五、發明說明(10) 9EOOOO〜9FFFFF間的ISA位址,將同時指向BIOS與系統資料 之情形。 在第二圖中’配合B10SCS#訊號之後便可除去上述之問 題。因為當ISA位址9EOOOO-9FFFFF與BI0SCS#為0搭配時, 係用以指出所存取的將為BIOS之資料,所以位址轉換邏輯 裝置230亦在此時被為〇的BI0SCS#所驅動,以便轉換biqs 位址第21位元,以產生1E0000-1 FFFFF之存取位址後,再 送往記憶體晶片202之區域D而讀出BIOS資料。因此不會讀 出與9E0 0.0 0-9FFFFF具有相同ISA位址之系統資料,亦即儲 存於記憶體晶片2 0 4之第一個儲存格所儲存的系統資料。 另一方面’當ISA位址9E00 00-9FFFFF與之搭配 用以讀出系統資料時’此時的位址轉換邏輯裝置2 3 〇合把 ISA 位址9EOOOO 加上20000h 之位移(BIOS 的大 i128KB)a,ρ 形成A00 00 0之位址,隨後再取21個位元’以形成⑽⑽= 存取位址用以指向記憶體晶月20 4之第—個儲存格處, 於是便讀出所儲存的系統資料了。 此外,第三圖所描繪之實例可視實際之颊金 况劃情形而變。以 如將BIOS儲存於區段C中,但整個記憶體左 例 似·廿取結爐^能带 做些.微的改變。請參照第四圖,其描繪本發b ^ 5已憶體晶片2 0 2、 佳實施例,與第一個實施例相同的是,第二:,第亡個钱 亦利用DRAM作為0 0 0 0 0 0〜7FFFFF之儲存場所―車父佳實施例 . 汀’而 800 000〜FFFFFF亦利用四個快閃記憶體之>k^410291 V. Description of the invention (10) The ISA address between 9EOOOO ~ 9FFFFF will point to the BIOS and system data at the same time. In the second picture, the above problem can be eliminated after the B10SCS # signal is used. Because when the ISA address 9EOOOO-9FFFFF and BI0SCS # are 0, it is used to indicate that the accessed data will be BIOS, so the address translation logic device 230 is also driven by BI0SCS # which is 0 at this time. In order to convert the 21st bit of the biqs address to generate an access address of 1E0000-1 FFFFF, it is sent to the area D of the memory chip 202 to read out the BIOS data. Therefore, system data with the same ISA address as 9E0 0.0 0-9FFFFF will not be read out, that is, system data stored in the first cell of the memory chip 204. On the other hand, when the ISA address 9E00 00-9FFFFF is used to read out the system data, the address conversion logic device 23 at this time adds the ISA address 9EOOOO plus 20000h shift (the large i128KB of the BIOS ) a, ρ form the address of A00 0 0 0, and then take 21 bits' to form ⑽⑽ = access address to point to the first cell of memory crystal 20 4, and then read out Stored system data too. In addition, the example depicted in Figure 3 may vary depending on the actual cheek condition. For example, if the BIOS is stored in section C, but the entire memory is left, you can take a few changes. Please refer to the fourth figure, which depicts the b ^ 5 memory chip 2 0 2 of the present invention, a preferred embodiment, which is the same as the first embodiment, and the second one: the first money also uses DRAM as 0 0 0 0 0 0 ~ 7FFFFF storage place —— Car Father's Best Example. Ting 'and 800 000 ~ FFFFFF also uses four flash memories > k ^

410291 五、聲明說明(11) --- 2 0 4、2 0 6、2 0 8來組成。由於基本輸出入系統係儲存於記 憶體晶片20 2之8EOOOO〜8FFFFF區段中(亦即儲存於第四^ 之區域C中)*於是解碼裝置425中由解碼區 D2(9EOOOO~BDFFFF)所產生之對應結果,便可直接經由 ROMCS2#馈入至記憶體晶片204,而不需經由組合邏輯裝置 415做進一步之判斷。因為在8EOOOO〜8FFFFF前後之實體位 址(分別為8肝卩?厂與9 0 0 0 0 0 )皆在記憶體晶月2.〇2中/與第 二圖所示之實施例不同’然而在解碼器2 2 5的五個解碼區 所示的數值依然是ISA位址。 ' 請參閱第五B圖’其描繪對應結果mb,#與ΜΓ #、以及 BI.OSCS# ’配合所輸入的ISA位址而產生的輪出對應表、當 I S A位址係指向解碼區D1之系統資料區時,而該系統資料 區未與解碼區DB重疊時,此時的BI0SCS#將為1,所以们,#· 將為0、而MB’ #則為1 ;但是R〇MCSl #將為0,用以啟動記憶 體晶片2 0 2以讀出所需之系統資料。當[§ A位址係指向 8E0 000〜8FFFFF之系統資料區時,由於所對應到的為與解 與區D B重疊的解碼區D1 ’但是因為Β ί 0 S C S #為1,所以μ 1,# 與MB ’#皆為〇 ’而且R〇μCS1 #亦為0,用以啟動記憶體晶片' 202以讀.出所需之系統資料。再者,當ISA位址係指向 8EOOOO〜eFFl^FF之BIOS資料區時,由於輸入到解碼器425的 位址僅有20位元(其餘之第21-24位元為〇),所以解碼器 425無法找到與其對應的解碼區,所以们’ #與mb’ #皆為j ; 但是因為BI0SCS#為〇,所以R〇MCSl #亦將為〇,用以啟動記410291 V. Statement (11) --- 2 0 4, 2 0 6, 2 0 8. Since the basic input / output system is stored in the 8EOOOO ~ 8FFFFF section of the memory chip 202 (that is, stored in the area C of the fourth ^) *, the decoding device 425 is generated by the decoding area D2 (9EOOOO ~ BDFFFF). The corresponding result can be fed directly to the memory chip 204 via ROMCS2 # without further judgment by the combinational logic device 415. Because the physical addresses before and after 8EOOOO ~ 8FFFFF (respectively 8 liver? Factory and 9 0 0 0 0 0) are all in the memory crystal 2.0. 2 / different from the embodiment shown in the second figure 'However The values shown in the five decoding areas of the decoder 2 2 5 are still ISA addresses. 'Please refer to the fifth diagram B', which depicts the corresponding results mb, # and ΜΓ #, and BI.OSCS # 'The round-robin correspondence table generated according to the input ISA address, when the ISA address points to the decoding area D1 When the system data area does not overlap with the decoding area DB, BI0SCS # will be 1 at this time, so, # · will be 0, and MB '# will be 1; but R〇MCSl # will be 0, used to start the memory chip 202 to read out the required system data. When [§ A address points to the system data area of 8E0 000 ~ 8FFFFF, because it corresponds to the decoding area D1 'which overlaps with the solution and area DB, but because Β ί 0 SCS # is 1, so μ 1, # And MB '# are both 0' and R〇μCS1 # is also 0, which is used to start the memory chip '202 to read and output the required system data. Furthermore, when the ISA address points to the BIOS data area of 8EOOOO ~ eFFl ^ FF, because the address input to the decoder 425 is only 20 bits (the remaining 21-24th bits are 0), the decoder 425 can not find the corresponding decoding area, so we '# and mb' # are both j; but because BI0SCS # is 0, so RMCSl # will also be 0, used to start recording

410291 五、發明說明(12) 憶體晶片2 0 2以讀出所需之B 10S資料。最後,當ISA位址所 對應的為解碼區D2、D3或D4時,因為BiosCS#、MB,#、與 ΜΓ #皆為1,所以romCSI#亦為1。 同樣的’上述之實施例亦可運用兩俩4MB來實施本發 明所揭露之内容,然而位址轉換邏輯裝置4 3 〇便需根據 BI 0S所在的位址來轉換I sa位址第2 2位元與第2 1位元(諸 如OOaOMB-IMB 、01alMB-2MB 、10a2MB-3MB 、 1 :i a 3 Μ B - 4 Μ B) ’來指向b I 〇 S所在的位址。事實上,習知政 術者亦可運用更多的高容量之快閃記憶體晶片,來依據本 發,所揭露之技術内容,而且可基於本發明所揭露之技.術 内合’ fe易的構築所有的邏輯電路結構。 、程d誌多的好處:⑴藉著將該基本輸出入系 記憶體中,可避免額外的記憶體來儲 份利用該可讀寫記憶體之多餘空間。萬之工間⑴可充 本發明雖以一較佳實例闡明如上,然非 丰發明精神與發明實舰,、、”並非用以限定 發明中’僅列舉使用該可讀.寫記恃體巧】。例如在本 :為該基本輸出入程式儲存位址 曰區來 悉此領域技藝者,當 何磁區中。因此,對熟 田了輕易了解本發明之方法與裝置當可 410291410291 V. Description of the invention (12) Membrane chip 2 0 2 to read out the required B 10S data. Finally, when the ISA address corresponds to the decoding area D2, D3, or D4, because BiosCS #, MB, #, and ΜΓ # are all 1, romCSI # is also 1. The same 'the above embodiment can also use two 4MB to implement the content disclosed in the present invention, but the address conversion logic device 4 3 0 needs to convert the 2nd bit of the Isa address according to the address where BI 0S is located. And the 21st bit (such as OOaOMB-IMB, 01alMB-2MB, 10a2MB-3MB, 1: ia 3MB-4MB) to point to the address where bIOS is located. In fact, politicians can also use more high-capacity flash memory chips based on the technical content disclosed in this publication, and can be based on the techniques disclosed in the present invention. All logic circuit structures. The advantages of Cheng and Zhiduo: By using this basic output into the system memory, you can avoid extra memory to store the extra space of the readable and writable memory. Although the present invention is explained in the above with a better example, it is not the spirit of the invention and the actual invention of the ship. "," "Is not intended to limit the invention." ] For example, in this article: For the basic input and output program storage address area to learn about the artisans in this field, what magnetic zone. Therefore, familiar with the method and device of the present invention can be easily 410291

Claims (1)

410291 申請專利範圍 1.—種結合其士 ^., 處理系统,v出入系統(β 1 os )與系統記憶體之資料 。系系統包含: 讀寫非17揮發寫&非j發性記憶體,用以儲存系統資料於該可 儲存該憶體之第;區段第三區段與第四區段, 區段,其中每入系統於1亥可讀寫非揮發性記憶體之第二 段位址之定^第一區段位址,該第三區段位址與該第四區 區段位址定為連續位址,且該第三區段位址與該第二 我為相同位址; = = 流排,用以傳送系統發出之存取位址; A. 馬凌置,電連接於該可讀寫非揮發性圮情辦Β 4 位址匯流铋,& ’干知丨王5隗體及該 號為第一i綠解碼裝置因應於—基本輸出入贏統選擇訊 "、辑位準及該存取位址,.對該可讀芎非& & —£饫進行對映,因應於該存取位址 己 ,址^該基本輪出入系統選擇訊號為第二邏輯位二區段 °衾可璜寫非揮發性記憶體第三區段進行對映,因庵蚪,對 取位址為該第—區段位址時,對該可讀寫非揮發峰’於该存 U第一區段進行對映,因應於該存取位址為該第4區1憶體 時’對該可讀寫非揮發性記憶體第四區段進行對也址 其中上述之該對映係用以使系統對該對映 -、1 2 3 4 ' 存取。. 心k段進行410291 Scope of patent application 1. A kind of information that combines ^., Processing system, v access system (β 1 os) and system memory. The system includes: read and write non-17 volatile write & non-j memory, which is used to store system data in the first part of the memory that can store the memory; the third section and the fourth section, the section, of which Each time the system enters the system, the second segment address of the non-volatile memory can be read and written. The first segment address, the third segment address and the fourth segment address are set as continuous addresses, and the first The three-segment address is the same address as the second self; = = stream, used to transmit the access address issued by the system; A. Ma Lingzhi, electrically connected to the readable and writable non-volatile information office B The 4 address converges bismuth, & 'Knowledge 丨 King 5 Carcass and this number is the first i green decoding device in response to-basic input and output win system selection news ", editing level and the access address. Map the readable non-amplifier & — £ 饫, corresponding to the access address and address. The basic round-in / out system selects the signal as the second logical bit and two sectors. The non-volatile can be written. The third segment of the memory is mapped. Because of this, when the address is the first segment, the read-write nonvolatile peak is The first segment of the memory is mapped, so when the access address is the 1st memory of the 4th region, the fourth segment of the readable and writable non-volatile memory is also mapped. The antipodal system is used to make the system access the antipodal, 1 2 3 4 '. Heart segment 第U頁 1 如申請專利範圍第1項之資料處理系統,其中該. 2 置更包含一位址轉換裝置’因應於該基本輪出入’炱 3 訊號為第一邏輯位準時,.轉換該位址匯流排之^統選擇 4 卄取位址至 410291 六、申請專利範圍 該第二區段位址 行對映。 對該可讀寫非揮發性記憶體第二區段進 3.如申請專、利範圍第1項之資料處理系統,其中該可讀寫 啐揮發性記憶體為一快閃記憶體。 t如申清專利範圍第1.項之資料處理系統,其中該位址匯 排係;為 ISA (. Industry Standard Architecture)位址 匯流排。 5 ·如申睛專利範圍第1項之資料處理系統,其中該可讀寫 非揮發性記憶體之該第一區段位址,第三區段位址,盥第 四區段位址係為一連續位址。 考:Γ結合基本輸出入系統(BI〇S )與系統記憶體之資料 處理_系統,該系統包含: 、 嘈窵賣寫非揮發性記憶體,用以儲存系統資料於該可 ·.’、、"揮發性記憶體之第一區存 於該可靖合L 1咱’r…丞+翰出入糸統 為該可窄二¥揮發性記憶體之第二區段,其中該第二區段 ’· ’ 一 。賣寫非揮發性記:隱體之最高區段; 二=址匯流排,用以傳送系統發出之存取位址; 位址匯置/έ電連接於該可讀寫非揮發性記憶體及該 號為第-邏短:Ϊ裝置因應於一基本輸出入系統選擇訊 、輯位準牯及該存取位址,對該可讀寫非揮發性Page U 1 The data processing system as described in the first item of the patent application scope, wherein the .2 unit further includes a bit conversion device 'responds to the basic round in' and '3' when the signal is at the first logical level. ^ System selection of the address bus 4 卄 Get the address to 410291 6. The address range of the second section of the patent application is mapped. Proceed to the second section of the readable and writable non-volatile memory. 3. If you apply for the data processing system of the first and benefit range, the readable and writable volatile memory is a flash memory. tIf the data processing system of item 1. of the patent scope is declared, the address bus is the ISA (. Industry Standard Architecture) address bus. 5 · The data processing system of the first item of the patent scope, wherein the readable and writable non-volatile memory of the first sector address, the third sector address, and the fourth sector address are a continuous bit site. Test: Γ combines the basic input / output system (BI0S) with the data processing system of the system memory. The system includes:, Noisy selling and writing non-volatile memory, used to store system data in the .. ', "The first area of the volatile memory is stored in the volatile memory L1'r ... 丞 + John access system is the second section of the volatile memory that can be narrowed ¥ 2, where the second area Paragraph '·' One. Write and write non-volatile memory: the highest segment of the hidden body; two = address bus, used to transmit the access address issued by the system; the address collection / electrical connection to the readable and writable non-volatile memory and The number is the first-logic short: the device responds to a basic input / output system selection signal, position level, and the access address, and is non-volatile to the read / write 第18頁 410291 六申請專利範圍 記憶體第二區與 _ ^ /Λ 杈進仃對映,因應於該存取位址為該楚 k位址時,料好 次第一區 映; f該可續寫非揮發性記憶體第一區段進行對 存取其。中上述之該對映係用以使系統對該對映之區段進行 7置2申請專利範圍第6項之資料處理系統,其中該解碼裝 訊嗶^含一位址轉換裝置’因應於該基本輸出入系統選擇 該&為,一邏輯位準時,轉換該位址匯流排之存取位址至 ^第二區段位址’對該可讀寫非揮發性記憶體第二區段進 行對映。 8·如申請專利範圍第6項之資料處理系統,其中該可讀寫 非揮發性記憶體為一快閃記憶體。 9·如申請專利範圍第6項之資料處理系統,其中該位址匯 机排係為一iSA(Industry standard Architecture)位址 匯流择-。 — 10. —後解碼裝置,因應一位址匯流排傳送系統發出之存 取位址,對可讀寫非揮發性記憶體十之系統資料與基本輸 系統(BIOS)進行對映,其中該可讀寫非揮發性記憶 2用以儲存糸統貧料於該可讀寫非揮發性記憶體之第一區 & ’第三區段與第四㈣,儲存該基本輸出入系統於該可P.18 410291 The second area of the memory of the six-patent application is mapped to _ ^ / Λ branch. Therefore, when the access address is the Chu k address, the first area mapping is expected; f Continue to write the first sector of the non-volatile memory to access it. The above-mentioned mapping is used to enable the system to perform 7-to-2 mapping on the patent application scope of the 6th data processing system, where the decoding equipment beep ^ contains a bit conversion device ' The basic input / output system selects the & for a logic level, converts the access address of the address bus to ^ second sector address' to the second sector of the writable non-volatile memory Reflection. 8. The data processing system according to item 6 of the patent application scope, wherein the readable and writable non-volatile memory is a flash memory. 9. If the data processing system of item 6 of the patent application scope, the address bus is an iSA (Industry standard Architecture) address bus option-. — 10. — The post-decoding device maps the system data of the non-volatile memory 10 that can be read and written to the basic input system (BIOS) according to the access address issued by the address bus transmission system. The read-write non-volatile memory 2 is used to store the system data in the first region & 'the third region and the fourth region of the writable non-volatile memory, storing the basic input / output system in the accessible 410291 六、申請專利範圍 讀寫非揮發性記憶體之第二區段,其中該第一區段位址, 該第二區段位址與該第四區段位址之定義係為連續位址, 且结第三區段位址與該第二區段位址定義為相同位址,該 解瑪裝置電連接於該可讀·寫非揮發性記憶體及該位址匯流 排’其特徵在於: 該解碼裝置因應於一基本輸出入系統選擇訊號為第一 邏輯位準及該存取位址,對該可讀寫非揮發性記憶體第二 區段進行對映’因應於該存取位址為該第二區段位址及該 基本輪出入系統選擇訊號為第二邏輯位準時,對該可讀禽 ^揮發性記憶體第三區段進行對映,因應於該存取位址為 =第一區段位址時,對該可讀寫非揮發性記憶體第一區段 ΐϊΐί禮:應於該存取位址為該第四區段位址時,對該 讀寫非撢發性記憶體第四區段進行對映; 其中上述之該對映係田 么 存取。 1 用u使系統對該對映之區段進行 Π.如申請專利範圍第 果包含…位Μ轉換裝置’ Λ 該解碼裂置 號為第一邏輯位準時,艘她應於該基本輸出入系統選擇訊 第二區段位址,料可^該位址匯流排之存取位址至該 對映。 讀寫非揮發性記憶體第二區段進行 1 2 ·如申請專利範圍第1 择称_ u 頁之解碼裝置,其中該可讀耷韭 谭發性記憶體為一快閃記憶體。 丹f及!靖冩非 410291 、中請專利範圍 2·你^申請專利範圍第10項之解碼裝置,其令該位址匯流 流=為一ISAUndustry Standard Architecture)位址匯 =·如申請專利範圍第Η).項之解.碼裝置,其中讀 ::性記憶體之該第一區段位址,第三區段位址;^非 &段位址係為一連續位址。 乐四 =私一種解碼裝置,因應一位址匯流排傳送系統發出之存〇 出=,對可讀寫非揮發性記憶體中之系統資料與基本輸 、統(ΒΙ〇§ )進行對映,其中該可讀寫非記 IS存系統資料於該可讀寫非揮發性記憶體之第-t 第二f I該基本輸出入系紙於該可讀寫非揮發性記憶體之 古二#又,其中該第二區段為該可讀寫非撢發性記憶體之 =區段,該解碼裝置電連接於該可讀寫非揮發性記憶體 1位址匯流排,其特徵在於: 邏輟1解s瑪裝置因應於一基本輸ώ入系統選擇訊號為第一 區鱼及該存取位址,對該可讀寫非揮發性記憶體第二 讲^ ^仃對映,因應於該存取位址為該第一區段位址時, .讀寫非揮發性記憶體第一區段進行對映; 存取◊。中上述之該對映係用以使系統對該對映之區段進行410291 VI. Patent application scope Read and write the second sector of non-volatile memory, where the definition of the first sector address, the second sector address and the fourth sector address are continuous addresses, and The third sector address is defined as the same address as the second sector address, and the solution device is electrically connected to the readable and writable non-volatile memory and the address bus. It is characterized in that the decoding device responds to In a basic I / O system, the signal is selected as the first logic level and the access address, and the second section of the readable and writable non-volatile memory is mapped. When the sector address and the basic round access system select the signal as the second logical level, the third sector of the readable bird ^ volatile memory is mapped, so the access address is equal to the first sector address To the first sector of the readable and writable non-volatile memory: when the access address is the fourth sector address, the fourth sector of the read-write non-volatile memory Antipodal; which of the above is Tian Tian access. 1 Use u to make the system perform the mapping of the mapped section. If the scope of the patent application includes ... Bit M conversion device 'Λ When the decoding split number is the first logical level, she should use the basic input and output system. Select the address of the second segment of the message. It is expected that the access address of the address bus to the mapping. Read and write the second section of non-volatile memory 1 2 • As the decoding device on page 1 of the patent application, the readable memory is a flash memory. Dan f and! Jing Jingfei 410291, Chinese patent application range 2. You ^ apply for a decoding device in the 10th patent scope, which makes the address confluence = an ISAUndustry Standard Architecture) address exchange = · if the scope of patent application Paragraph (ii). The solution of the item. The code device, wherein: the first sector address and the third sector address of the :: sex memory are read; the non- & segment address is a continuous address. Music four = a private decoding device that responds to the storage of a single address bus transmission system. It outputs a mapping of the system data in the non-volatile memory that can be read and written to the basic input and output system (BIO). Wherein the readable and writable non-volatile IS storage system data is -t second f I of the readable and writable non-volatile memory, and the basic input / output system is paper-based in the writable and non-volatile memory. The second section is the = section of the readable and writable non-volatile memory, and the decoding device is electrically connected to the address bus of the readable and writable non-volatile memory at 1 address, which is characterized by: The 1st sema device responds to the basic input system by selecting the signal as the first zone fish and the access address, and speaking to the readable and volatile non-volatile memory the second lecture ^ ^ 仃. When the address is the address of the first sector, the first sector of the non-volatile memory is read and written for mapping; access is performed. The above-mentioned map is used for the system to perform the mapping of the mapped section. 第21頁 六、申請專利範圍 __ 1更6.Λ申^^利絲範圍第26項之解碼裝置,其中該解碼裝置 字W .r提彳換裝置,因應於該基本輸出.入系統選擇 唬為第一邏軏位準時,媸 w otL 弟一 & #又位址,對該可福皆# k 對映。 Τ項寫非揮發性記憶體第二區段進行 1 7 .如申請專利範圍第1 $ jg夕姑&炉· $ ^ r, ^ _ 间币13孭之解碼裝置’其中該可讀寫非 揮啦性記憶體為一快閃記憶體。 . 18.如申請專利範圍第15項之解碼裝置,其中該位址匯流 匯 排係為一 IS A( Industry Standard Architecture)位址 流排。 1 9. 一 % 可讀寫 之存取 映之區 存系統 區段與 發性記 段位址 區段位 括: (a ) 重對於儲存基本輪出入系統(B〖〇s)與系統資料之 非揮發性記憶體,因應一位址匯流排傳送系統發出 位址進行對映之方法,該對映係用以使系統對該對 段進行存取’其中該可讀寫非揮發性記憶體用以儲 資料於該可讀寫非揮發往記憶體之第一區段,第三 第四區段’儲存該基本輸出入系統於該可讀寫非揮 憶體之第二區段,其中該第一區段位址,該第三區 與該第四區段位址之定義係為連續位址,且該第三 址與S玄第一區段位址定義為相同位址,該方法包 因應 於 基丰輸出入系統選擇訊號為第一邏輯位準Page 21 VI. Application for patent scope __ 1 more 6. Λ application ^ ^ Li Si range of the 26th decoding device, where the decoding device word W.r upgrades the device, according to the basic output. Input system selection Blind as the first logical position is on time, 媸 w otL 一一 &#; address, and this can be all #k opposite. Item T writes the second section of non-volatile memory for 1 7. For example, the scope of the patent application 1st $ jg Xigu & Furnace $ ^ r, ^ _ currency coin 13 'decoding device' where the read-write non- Volatile memory is a flash memory. 18. The decoding device according to item 15 of the patent application scope, wherein the address bus is an IS A (Industry Standard Architecture) address bus. 1 9. One% of the readable and writable access maps are stored in the system section and the address field. The address sections include: (a) Non-volatile storage of the basic round-trip system (B 〖〇s) and system data. The memory is mapped in response to an address issued by an address bus transmission system. The mapping is used to allow the system to access the pair of segments. The non-volatile memory is used for storing Data is stored in the first section of the readable and writable non-volatile memory, and the third and fourth sections are used to store the basic input / output system in the second section of the readable and writable non-volatile memory, wherein the first section The segment address, the definition of the third zone and the fourth zone address are consecutive addresses, and the third address is defined as the same address as the first zone address of Suan, this method package is based on the input and output of Jifeng The system selects the signal as the first logic level 第22頁 410291 ____ 六、申請專利範圍 - 及該存取位址,對該可讀寫非揮發性記憶體第二區段進行 對映; . ' (b)因應於該存取位址為該第二區段位址及該基本輸出 入系統選擇tfl號為第二邏輯位準時,對該可讀寫非揮發性 記憶體第三區段進行對映; (c )因應於該存取位址為該第一區段位.址時,對該可讀 寫非揮發性記憶體第一區段進行對映;以及 .(d)因應於該存取位址為該第四區段位址時,對該可讀 寫非揮發性記憶體第四區段進行對映。 2 0 .如申請專利範圍第1 9項之該方法,其中於步驟(a)之前 更包含一步驟: 因應於該基本輸出入系統選擇訊號為第一邏輯位準 時,轉換該位址匯流排之存取位址至該第二區段位址。 2 1 .如申請專利範圍第1 9項之方法,其中該可讀寫非揮發 性記憶體為一快閃記憶體。 2 2 .如申請專利範圍第1 9 .項之方法,其中該位址匯流排係 為一 ISA( Industry Standard Architecture)位址匯流· 排0 2 3 .如申請專利範圍第1 9項之方法,其中該可讀寫非揮發 性記憶體之該第一區段位址,第三區段位址,與第四區段Page 22 410291 ____ VI. Scope of patent application-and the access address, mapping of the second section of the readable and writable non-volatile memory;. (B) The address corresponding to the access address is the When the address of the second sector and the basic input / output system select tfl as the second logical level, the third sector of the readable and writable non-volatile memory is mapped; (c) corresponding to the access address is When the first sector is located at the address, the first sector of the readable and writable non-volatile memory is mapped; and (d) when the access address is the fourth sector address, The fourth segment of non-volatile memory can be read and written for mapping. 20. The method according to item 19 of the scope of patent application, which further includes a step before step (a): when the signal selected by the basic input / output system is the first logical level, the address bus is converted. Access the address to the second sector address. 2 1. The method according to item 19 of the scope of patent application, wherein the readable and writable non-volatile memory is a flash memory. 2 2. If the method of item 19 of the scope of patent application, the address bus is an ISA (Industry Standard Architecture) address bus · Row 0 2 3. If the method of item 19 of the scope of patent application, The first sector address, the third sector address, and the fourth sector of the read-write nonvolatile memory 第23頁 410291 六、申請專利範圍 位址係為一連續位址。 2 4 .—種對於儲存基本輸出入系統(B 10S )與系統資料之 可讀寫非揮發性記憶體,因應一位址匯流排傳送系統發出 之存取位址進行對映之方法,該對映係用以使系統對該對 映之區段進行存取,.其中該可讀寫非揮發性記憶體用以儲 存系統f料於該可讀寫非揮發性記憶體之第一區段,儲存 該基本輸出入系統於該可讀寫非揮發性記憶體之第二區 段,其中該第二區段為該可讀寫非揮發性記憶體之最高區 段,該方法.包括: -(a)因應於一基本輸出入系統選擇訊號為第一邏輯位準 時及該存取位址,對該可讀寫非揮發性記億體第二區段進 行對映; (b)因應於該存取位址為該第一區段位址時,對該可讀 寫非揮發性記憶體第一區_段進行對映。 2 5 .如申請專利範圍第2 4項之該方法,其中於步驟(a )之前 更包含一步驟: 因應於該基本輸出入系統選擇訊號為第一邏輯位準 時,.轉換該位址匯流排之存取位址至該第二區段位址。 26 .如申請專利範圍第24項之方法,其中該可讀寫非撢發 性記憶體為一快閃記憶體。Page 23 410291 VI. Scope of Patent Application The address is a continuous address. 2 4 .—A method for mapping the readable and writable non-volatile memory that stores the basic input / output system (B 10S) and system data according to the access address issued by a one-bit bus transmission system. Mapping is used for the system to access the mapped section. The readable and writable non-volatile memory is used to store the system data in the first section of the writable non-volatile memory. The basic input / output system is stored in a second section of the readable and writable non-volatile memory, wherein the second section is the highest section of the readable and writable non-volatile memory. The method includes:-( a) Map the second sector of the readable and writable non-volatile memory based on the first logical input timing and the access address selected by a basic input / output system; (b) Based on the memory When the address is the first sector address, the first region_segment of the writable non-volatile memory is mapped. 25. The method according to item 24 of the scope of patent application, which further includes a step before step (a): when the signal is selected as the first logical level by the basic input / output system, the address bus is converted. Access address to the second sector address. 26. The method of claim 24, wherein the readable and writable non-volatile memory is a flash memory. 第24頁Page 24 第25頁Page 25
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090240876A1 (en) * 2008-03-24 2009-09-24 Hitachi, Ltd. Information processing apparatus, information processing method and storage system
CN105761391A (en) * 2016-04-01 2016-07-13 无锡矽鼎科技有限公司 Pos machine

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090240876A1 (en) * 2008-03-24 2009-09-24 Hitachi, Ltd. Information processing apparatus, information processing method and storage system
CN105761391A (en) * 2016-04-01 2016-07-13 无锡矽鼎科技有限公司 Pos machine

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