TW407303B - Semiconductor thin film, and method and apparatus for producing thereof, and semiconductor device and method for producing thereof - Google Patents

Abstract

In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by making a grain size of a silicon thin film. First, an insulation layer with a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulated substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203 is patterned so that a plurality of stripes is formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe patterns on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is made into a polycrystalline silicon thin film 210.

Description

tt Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs ^ 07303 Λ7 __B7 V. Description of the Invention (1) Technical Fan Ming This invention relates to light sensors such as thin film transistors (TFTs) and line sensors used in liquid crystal displays, and Applicable to 70 pieces of photovoltaic cells such as solar cells, SRAM (Static Random Access Memory) and other memory LSIs (large integrated circuit Urge Sca) k

(Integrated) semiconductor film, its manufacturing method and manufacturing device. The semiconductor film described above is, for example, a crystalline semiconductor film formed on a glass substrate or the like and having a crystalline property formed by processing an amorphous material by laser tempering. Further, a semiconductor device using such a semiconductor thin film, and a method for manufacturing the same are provided. • Technical background In the past, methods and apparatuses for forming a high-quality silicon semiconductor film constituting a thin film transistor (TFT) on an amorphous insulating substrate, etc., have used a plasma CVD method using a light-emitting discharge and a plasma CVD device. After many years of research and development, the hydrogenated amorphous silicon (a_si) film obtained in these manufacturing methods and devices has reached the level of function as a high-quality semiconductor film, such as laptops and notebook personal computers. Electro-optical devices such as maintenance switching workstations, active matrix liquid crystal display pixels for switching pixels of active matrix liquid crystals, light sensors for facsimile image sensors, and solar cells for desktop computer batteries are used in various integrated circuits. Etc. have been put into practical use. The greatest advantage of the above-mentioned hydrogenated amorphous rhenium is that, at a processing temperature of up to about 300 ° C, a large-area substrate can be obtained with excellent reproducible and stable manufacturing results. On the other hand, in recent years, with the large paper size of the display or image sensor, China's National Standards (CNS) 2i × 297 is available. I ---------- install-^ --- r--order (please read the notes on the back and fill in this page again) 4 V. Description of the invention (2 407303 -A7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs, high-density (high-definition) pixels Progress requires Shishi semiconductor films that can keep up with higher-speed driving. In addition, in order to reduce weight and lower costs, it is also necessary to obtain high-speed driving elements for peripheral circuits of liquid crystal displays. However, for example, the mobility of the electric field effect of the above-mentioned hydrogenated amorphous stone is only at most H2 / V · Ca, and the electrical characteristics that fully meet the above requirements cannot be obtained. Therefore, a crystalline semiconductor film is formed to improve the electric field effect. The technical measures of mobility are studied, and the procedure is: (1) A manufacturing method for crystallizing the deposited thin film by mixing hydrogen and Si] p4 in a silane gas and using a plasma CVD method; and (2) ) A manufacturing method that attempts to crystallize amorphous silicon as a precursor has been developed. (1) Although it is necessary to crystallize at the same time as the formation of a semiconductor thin film, it is still necessary to heat the substrate to a relatively high temperature (60 ° ( rc). For this reason, those who use substrates must use high-value quartz substrates that are resistant to high temperatures, and it is difficult to use inexpensive glass substrates. Therefore, they have the disadvantage of high manufacturing costs. Specifically, for example, they are often used for active materials. Corning (3-2 > 〆) 7059 glass of the matrix type liquid crystal display device has a strain point of 593. When the heat treatment is performed at 600 ° C or higher, mechanical properties such as shrinkage and distortion of the glass substrate are caused. Deformation will become significant, so proper semiconductor circuit formation procedures and LCD panel production procedures will become difficult. Furthermore, if you want to accumulate multiple elements, there will be thermal damage to the circuit area that was formed first. Yu. "The above (2) is the formation of an amorphous silicon film on the substrate, and then please k: read the back 1 ¾ i matters again and bind this page. (CNS) (21Gx297 public health) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, 407303 A7 ___B7 V. Description of the invention (3) Those who heat to form polycrystalline silicon (polysilicon: P — Si), which is mainly used at about 600 C The solid-phase growth method that performs long-term heat treatment and the laser tempering method (especially the excimer laser tempering method). The former solid-phase growth method requires heating the substrate on which the amorphous film is formed. Keeping at a temperature above 600¾ for more than 20 hours, it will still lead to an increase in manufacturing, etc. On the other hand, the latter excimer laser tempering method, such as IEEE Electrón

Device Letters, 7 (1996) ρρ · 276-278 and IEEE Transactions on Electron Devices, 42 (1995) PP. 251.257, are disclosed by the use of high-energy UV light excimer lasers to illuminate amorphous silicon thin films. In order to make the * crystallize, instead of directly heating the glass brick substrate, it can be successfully learned that the polycrystalline silicon thin film β with high electric field effect mobility (> 100 cm2 / V · sec) and better electrical characteristics, that is, non- The crystalline silicon system has the transmittance characteristics as shown in the figure. For example, compared to laser light with a wavelength of 308 nm according to XeC 丨 excimer laser, its absorption coefficient is about 106 cm-i. Laser light is generally absorbed in an area of about 100 people from the surface of the amorphous silicon ', and the temperature of the substrate hardly rises (approximately 60 (below rc)), and only the amorphous stone becomes crystalline. (Polycrystalline or single crystal). Therefore, inexpensive glass substrates can be used. Furthermore, since the light beam can be locally irradiated to crystallize, it is possible to keep pixel areas that do not require such high-speed characteristics to be non-critical Crystal thin film, and clever. Will be like The crystallization of the periphery of the prime region will not cause thermal damage to the so-called multi-dimensional accumulation of the formation of the drive circuit that requires high speed and the already formed circuit, and will cause the specific regions in sequence on the same substrate. It is possible to form a good crystalline film. This paper size is applicable to the Chinese National Standard (CNS) A4 Zhuge (210X297 mm) III ^ | Order (Please read the precautions on the back before writing this page) Central standard of the Ministry of Economic Affairs Printed by Bureau Coconut Consumer Cooperative Co., Ltd. 407303 A7 B-7 V. Invention Description (4) Furthermore, if this technology is used, CPU (Central Processing Unit) can even be accumulated on the same substrate. Here, the general structure and manufacturing method of a TFT which is an example of a semiconductor device using ρ-Si as described above will be described. FIG. 2 is a schematic diagram of a TFT 110 having a coplanar structure, and FIG. (a) is a plan view of the TFT 110, and 2 (b) 圊 is a cross-sectional view taken from the arrow P-P 'in FIG. 2 (a). As shown in FIG. 2, the above tft 110 is located at Provided on the insulating substrate 111 Coatings 1 and 2 and p-Si film 113 and, first insulating film (gate insulating film) 114 and second insulating film 116 and 'gate electrode 115, source electrode 117s, and j: and electrode There are three types of 117d, electrodes. The P-Si film 113 is formed on the undercoat layer 112 and is formed into a predetermined shape. In addition, the p-Si film 113 is composed of a channel region ina and a source region 113b and The electrode region 113c is formed, and the source region 113b and the drain region 113c are located on both sides of the channel region 113a. The source region 113b and the non-electrode region 1136 are formed by doping impurity impurities such as cans or boron. The β first insulating film 114 is formed of, for example, silicon dioxide (Si02), and is formed on the above. Above the p-Si film 113 and the undercoat layer Π2. The gate electrode 115 is a metal thin film made of, for example, aluminum (A1). The gate electrode 5 is located above the first insulating film 114, and is provided at a position corresponding to the channel region 113a of the p-film 113. In the second insulation, the edge film 116 is made of, for example, SiO2, and is laminated on the gate 115 and the first insulating film 114. Contact holes ns are formed in the first insulating film 114 and the second insulating film 116 to the source region 113b or the non-electrode region 113c of the p-Si film 113. The paper size is applicable to China National Standard (CNS) A4 (210X297). (Slim, thin) Packing-^ (Please read the notes on the back before filling out this page) Order printed by the Shell Standard Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 407303 A7 ~~ — __B7 V. Description of the invention (5) • 118. The source electrode 117S and the drain electrode ii 7 £ 1 are in contact with the source region u3b or the drain region 113c between the contact holes 118 and 118. The above-mentioned gate electrode 115 and source electrode 117s and the drain electrode 117d are formed into a pattern of a predetermined shape in a portion other than the cross section shown in the figure to constitute a wiring pattern. The above-mentioned TFT 110 is manufactured in the following manner. First, an undercoat layer 112 made of, for example, SiO2m is formed on the insulating substrate 111. Thereby, in order to prevent impurities from diffusing into the p-Si film 113 formed later, secondly, an amorphous silicon a-Si film (not shown) is formed on the undercoat layer 112 by, for example, plasma CVD. A film is formed, and the a_si film is engraved into a predetermined shape. Alternatively, the etching pattern may be performed after crystallization. Next, the a_Si film is irradiated with a short-wavelength excimer laser or the like to cool it (laser tempering). Thereby, the modified one, that is, the above-mentioned a-Si film is numerous and crystallized to form the p-Si film 113. Here, since the a-Si film has a large absorption coefficient for light in a short wavelength region, if an excimer laser is used as the energy beam, only the a-Si film can be selectively heated. Therefore, because the temperature rise of the insulating substrate 111 is small, there is an advantage that a low-cost glass substrate can be used as the material of the insulating substrate U i. On the p-Si film 113 formed in the above description, a first insulating film is formed by a normal pressure CVD method (Chemical Vapor .. Composition), and then a gate electrode is formed on the first insulating film 114. Electrode 115. Secondly, the gate electrode 115 is made into a mask, and the impurity ions constituting the donor or acceptor are implanted on the p_Si film 113 by, for example, an ion doping method, and the Chinese paper standard (CNS) A4 specification (210X297mm) II ^ ^ / I (Please read the notes on the back of the page before filling out this page) Printed by the Consumers' Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs ____ 407303 B7 V. Invention Description (6) In other words, impurities such as phosphorus or boron. Thereby, a channel region 113a, a source region 113b, and a drain region 113c are formed on the p-si film 113. Then, a second insulating film 116 is formed on the gate 115, and then a contact hole 118 is formed. 118, for example, aluminum is evaporated to form a patterned source electrode 117s and a non-electrode 117d. As described above, during the formation of the p-Si film, a pulsed laser such as an excimer laser has a large output power, for example, by moving a linear beam of laser light on a substrate while scanning the Although the irradiation procedure can crystallize a large area of amorphous silicon at a time, which is beneficial to the mass production of semiconductor devices, it is difficult to improve the quality of crystals. That is to say, the irradiation time of such a laser is about 10 nS, which is very short. Because the temperature difference between the irradiation and non-irradiation becomes large, the molten silicon film is subjected to rapid cooling. Medium crystallization β makes it difficult to control the growth degree and crystal orientation of crystals. It is not easy to perform sufficient crystal growth. Not only does the crystal grain size become smaller, but the intercrystalline density of the crystal becomes larger, the deviation also becomes larger, and the crystal defects often change. many. In more detail, in the cooling process after laser irradiation, crystal nuclei are generated disorderly, and each of the TB nuclei generated disorderly grows in a disorderly direction. And the crystal grains mutually collide with each other to stop the growth of the crystal by the state of 口 σ. The crystal grains produced through this growth process are small particles and random shapes. Therefore, it becomes a polysilicon film that exists among most crystals; since the charge carriers in such polyfluorene cannot move smoothly, TFTs such as electric field effect mobility are deteriorated. The following will discuss the mechanism of crystal growth and good crystal growth on real paper scales toward 297 mm in diameter. I --------- ^ —; ---- ir (please read the back first) Please pay attention to this page and write this page) Printed by the Consumers' Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs _ 407303 B7__ V. Description of the Invention The molecular laser is generated by exciting a rare gas such as xenon (Xe), krypton (Kr), and a mixed gas of chlorine (c 丨), fluorine (F), and the like with an electron beam. It is difficult to use it properly. Therefore, an optical system called a beam homogenizer (Beam Homogenizer) is used to form a beam with a uniform light intensity of a rectangular or linear shape with an angle of about several cm, which is tied to the laser. Tempering method is used. In the crystallization of a non-single-crystal. Thin film (commonly called an amorphous film) formed on a substrate, it is a method of scanning the shaped beam and irradiating it. However, there are several issues that must be solved in this method, for example, crystal size Problems such as poor uniformity of crystallinity, unstable transistor characteristics, and low mobility of the electrical% effect. For this reason, the following have been proposed as solutions to these problems: (1) Covering the reflective film and absorbing A part of the film on the irradiation surface to control the light absorption of the film surface, to form an intensity distribution, and to induce the growth direction of the crystal, and (2) by performing laser irradiation while heating the substrate (400 ° C) to Techniques for smoothly performing crystallization (Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, Yokohama, 1991, pp. 623-625), etc. Furthermore, for example, jpn. J_ Appl. Phys · 3 1 ( 1992) p 45) 0-4554 is also known. As shown in FIG. 3, the glass substrate 121 formed by the precursor semiconductor film 122 is placed on the substrate holder 124, and the substrate holder 124 is heated to about 400 ° C by the substrate heater 125, and the standard Laser light of molecular laser 123 This paper is sized to the Chinese National Standard (CNS) A4 (2 丨 〇2? 7mm> /-;-; --- 1T ------ 岣 · 1 ( Please read the precautions on the back before filling this page) -10-Printed by the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 407303 II-〇7 V. Description of the invention (8) ~ 123a Irradiated by precursor semiconductor 122 In this way, by combining the method of heating the glass substrate during laser light irradiation, high crystal quality can be obtained, that is, relatively large and uniform crystal grains, and electrical characteristics are improved. Among them, the former (1) Single crystallization can also be achieved, and the latter (2) can be applied relatively simply; if this technique is used, the deviation of the electric field effect mobility can be controlled within ± 10 ° / ❶. However, there are some The following problems cannot adequately correspond to those seeking multiple elements. Jihe-the latest technical trend of layer undercoating. That is, the above-mentioned (1) technology requires steps such as the use of a reflective film, which causes the manufacturing process of this part to become both complicated and costly. In addition, since it is not easy to use a reflective film in a narrow area, it is difficult to complete the crystallization of a small specific area. On the other hand, in the method (2), a heating step is necessary to heat the substrate. This reduces the productivity of this part. That is, the solid-phase growth method does not heat to a high temperature, but the process of heating and cooling the substrate also takes a considerable amount of time (for example, about 30 minutes to 丨 hours), so it is productive. The problem of 迠 reduction exists. When the area of the substrate is larger, in order to alleviate the deformation of the substrate, the longer it takes to heat and cool, the problem becomes more significant. Moreover, although this technology can shift the effect of the electric field effect, The deviation of the electric field is reduced to a certain degree, but the electric field mobility itself cannot be sufficiently raised to 'so it is not necessary to form a circuit requiring high speed That is, in order not to deform the glass substrate, etc., the glass substrate cannot be heated to about 550 C or higher, so it is difficult to obtain higher crystalline quality. The paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) (Li) --------- install --_---_-- order (Please read the precautions on the back before filling in this page: >

II V. Description of the Invention (9) Even more, this technology is a method of heating the entire substrate, so it is not suitable for crystallization that requires only a limited area on the substrate. As described above, in any of the techniques (1) and (2), there is a problem that the manufacturing cost increases. Therefore, the above-mentioned techniques (1) and (2) (the same applies to the other prior arts) have a fundamental problem in that it is difficult to realize a multi-layer and multi-dimensional stacking. That is, the temperature distribution control means used in these technologies is not suitable for selectively forming the same circuit area (polycrystalline region) that requires high speed and the circuit area (amorphous region) that does not require high speed. Means on the substrate; therefore, the goal of high accumulation and low cost cannot be achieved by these technologies at the same time. Here, the usefulness of a technique for crystallizing only a limited arbitrary region will be described. The laser tempering method related to the prior art uses a beam with steep sides (edge portions) and a flat top (same energy intensity per unit area) as shown in Fig. 4 '. Even a polysilicon film using such a light beam has not required such a high-speed operation in the past, and it is sufficient to use it, for example, to form a switching circuit for a pixel electrode. However, when the gate drive circuit and the source drive circuit, especially CPUs and other components that require high-speed operation, are also integrated on the same substrate, the quality of the polycrystalline film is as high as that achieved by the above-mentioned prior art. It is not enough. Specifically, for example, in a pixel area of an LCD, a movement degree of about 0.5 to 10 cm2 / Vs is sufficient. However, in a peripheral driving circuit such as a gate circuit and a source circuit for controlling a pixel, it is necessary to Have a degree of movement of about 100 to 300 cm2 / Vs. Therefore, in the prior art using the above-mentioned beam characteristics, it is not possible to obtain both stable and high mobility a, that is, this paper size is applicable to China National Standard (CNS) A4 Zhuge (210X2 ~ 7mm) ---- ------ Coat ----- 1T ------ Λ (Please read the notes on the back before writing. 4 Write this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 12 V, 407303 -at B7 Description of the invention (10) 'Generally, in polycrystalline silicon thin kiln, although the particle size of the crystal is as large as possible to make the transistor characteristics such as mobility high, but the polycrystallization treatment as described above cannot Obtain sufficient transistor characteristics. The reason is that in the light beam with the above characteristics, the heterogeneity of the crystal grains and the degree of crystallinity becomes larger. 'Moreover, in order to obtain large crystal grains and increase the degree of crystallinity', at the same time, the intensity of irradiation and the number of irradiations are increased. , The size of the crystal grains will become more inconsistent and cause the deviation of the crystallinity. In the following, β will be reviewed in detail for this reason. Fig. 5 shows a pattern circle of the crystallinity distribution when the above-mentioned rectangular light beam is irradiated on the amorphous iris thin film formed on the substrate. In the 5th, 丨 7〇 丨 indicates the realm of irradiated light '1702, 1704 indicates the part with low crystallinity, and the oblique line 1703 indicates the part with high crystallinity β As shown in the figure, if the energy intensity is uniform The conventional method of excimer laser will form a degree of crystallinity that increases only at the slash portion 1703 that enters the inside slightly from the realm 1701 of the irradiated light, and crystallizes in other parts (near the realm 1702 and the central part 1704). The degree of crystallinity distribution pattern of the characteristic that the degree becomes low. This phenomenon can be confirmed by micro Raman (7 γ y) spectrometry. That is, the Raman intensity measurement results of the part along the A-A line in FIG. 5 are shown in FIG. 6; in FIG. 6, there is a steep wave peak from the point where the realm enters the inside slightly, and the part can be known The fact that the degree of crystallization is high. Secondly, while referring to Fig. 7, the mechanism of generating such non-uniformity of crystallinity is examined. Irradiate the amorphous silicon film with a light beam, heat the film temperature to above the melting temperature of silicon (above about 140,000), and then stop the light irradiation, and the temperature of the thin film will decrease due to the exotherm. In the process, the melting Order of Silicon Precipitation II MI I " (Please read the notes on the back before filling out this page) Printed by the Consumers 'Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^ 13 Printed by the Shellfish Consumers' Cooperative of the China Standards Bureau of the Ministry of Economic Affairs Α7 __ ___ Β7 'Explanation (11) and crystallization. Here, when irradiating a light beam with uniform light intensity distribution as shown in FIG. 7 (a), a temperature distribution pattern as shown in FIG. 7 (b) is formed on the film surface. That is, although a flat temperature region without a temperature gradient is formed in the central portion, a steep temperature gradient is formed in the peripheral portion due to heat escaping to the surrounding area. At this time, if the temperature of the central portion is at the melting temperature of silicon, Above, after the irradiation of the element, the temperature near the intersection (near the boundary) of the temperature distribution curve 1901 and the crystallization temperature line 192 will first reach the crystallization temperature. Therefore, a crystal nucleus (1903) is generated in the vicinity of it (that is, the "tick"). That is, when the amorphous silicon film exceeds the melting point, in a region exceeding the melting point, the amorphous silicon thin film is melted and then melted. When solidified, it will crystallize, and polycrystallization can be obtained. Then, if the temperature decreases further (Figure 7 (d)), although the crystallization system uses the aforementioned crystal nuclei 1903 as the starting point, The direction of reaching the central part of the crystallization temperature, in the case of using a light beam with uniform light energy intensity ^, as shown in Section 7 (b, d, f) '' The temperature is almost no temperature in the direction facing the central part Decline in the state of the gradient. Therefore, at the time when the temperature drops, a relatively wide range will reach the crystallization temperature at the same time (Figure 7 (f)), and any part in the range (1904) can be made equal. Probability of generating crystal nuclei. As shown in Figure 7 (g), minute crystal nuclei are generated at the same time in the entire area of 1904; as a result, a polysilicon film composed of many minute crystal grains is formed. The crystal density of such polysilicon crystals is high. Therefore, Since the degree of carrier trapping between crystals becomes larger, the mobility of the electric field effect becomes smaller. Moreover, the 1900 series in Fig. 7 (c) shows the cross section of the thin film. Moreover, the degree of crystallization that occurs as described above does not occur. Uniform mechanism, applying Chinese National Standard (CNS) A < 1 specification (210X297 mm) I;; Order (Please read the precautions on the back before filling this page) 14 Staff of the Central Bureau of Standards, Ministry of Economic Affairs Printed by Consumer Cooperatives. A7--_ 一-B7 V. Description of the Invention (丨 2) ~ ~~ The same is true when the linear laser beam shown by 8 circles is irradiated. Here, in Figure 8 / Figure ' ⑷ indicates the energy density distribution in the X and yt directions of the excimer laser used; (b) indicates that the amorphous stone film is irradiated with an excimer laser having such an energy density distribution. (C) is an oblique view of a polycrystalline silicon thin-film transistor irradiated with laser light as shown in (a) and (b) above. That is, because the energy distribution shown in FIG. 8 is used. Laser, the temperature distribution in the y direction of the illuminated area is roughly uniform, and as As shown in Fig. 8 (b) (i), a temperature distribution is high in the central part and low on both sides in the x direction. The result of this temperature distribution is that the crystallization proceeds from the peripheral part in the x direction to the center, with many cores As shown in Figure 8 (c), as the model shows the crystalline state of the silicon thin film for many days, the linear beam of the poem beam has a low beam density. The crystal grains are large, but the crystal grains in the high energy density part (central part) become smaller. Furthermore, in Fig. 8, 131 is a transparent insulating substrate, 134 is a polycrystalline silicon thin film, and 141 is a crystal grain. 139 is an insulating film, and generally a silicon dioxide (SiO2) film is used, and 14 is an amorphous silicon thin film. Furthermore, in the above example, although the implementation of the i-th energy beam is exemplified for the sake of simplifying the description. The irradiation is the same, but the same is true for multiple irradiations. It is also difficult to improve the uniformity of the film quality of the semiconductor film in the conventional laser tempering, in addition to the difficulty in improving the mobility of the electric field effect as described above, and in particular, it is difficult to achieve both. problem. Here, the structure of the conventional laser tempering device will be described based on FIG. 9. In Figure 9, '151 stands for laser oscillator, --------- 1 _---_-- ir (please read the precautions on the back and fill in this page)

-15-A7 B7 407303 V. Description of the invention (13) 152 stands for reflection, 153 stands for homogenization device, 154 stands for window, 155 stands for substrate made of amorphous silicon layer, 156 stands for substrate, and 157 stands for control Device β, and when the laser of the amorphous silicon layer is tempered, the laser light oscillated by the laser oscillator 151 is guided to the homogenization device 153 by the mirror 丨 52, and is formed into a predetermined uniform energy The shaped laser beam is irradiated to the substrate 155 fixed on the substrate holder 156 fixed in the processing chamber through the window 154. When the laser tempering device described above is used for tempering, it is difficult to irradiate the laser beam collectively. On the overall surface of the substrate, in fact, the laser irradiation areas are overlapped, and the substrates are sequentially staggered to illuminate the substrates under the same conditions (for example, I. Asai, N. Kato, M. Fuse and Τ). Hamano, sixteen > Xi Gongyu · γ Qiaoba Λ η, 々, X (Jpn. J. Appl. Phys.) 32 (1993) 474). However, in such a laser tempering method in which the irradiation areas of the laser beams are overlapped and the radiation is sequentially shifted, 'if the laser energy density is high', the mobility of one of the evaluation criteria of the characteristics of the semiconductor film becomes high, The film quality is improved as a whole, but unevenness of the film quality occurs at successive places in the irradiated area, which makes the uniformity of the entire semiconductor film low. On the other hand, if it is irradiated with a laser with a relatively low energy density, it will become easier to improve the uniformity of the film quality, but because the energy density is low, it will be difficult to improve the mobility of the electric field effect. . Therefore, for example, when a substrate formed of a TFT is used in a liquid crystal display, as shown in FIG. 10, it is difficult to form a uniform film quality that satisfies the need for a relatively large image display area 158, and it must have a periphery. . Approval of clothes ordering (please read the notes on the back before filling this page)

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* Public 7 9 Z 16 V. Description of the invention (M) Semiconductor film of 159 field-effect mobility of the Central Bureau of Standards, Ministry of Economic Affairs, and consumer cooperation. Furthermore, for such problems, such as those disclosed in USP No. 5,756,343, although it is proposed to apply laser beams of different intensities to the image display area 158 and the peripheral circuit portion 159, but this is only a matter of intensity. It is difficult to maintain sufficient electric field effect mobility in the peripheral circuit portion 159. As described above, in the conventional laser tempering method, it is difficult to control the crystal grain size and crystal orientation, and it is not only difficult to form a semiconductor thin film with uniform crystal grain size and few crystal defects. There are also difficulties in terms of cost, and there is a problem in that it is not possible to simultaneously improve the film characteristics (such as electric field effect mobility) of the semiconductor thin film and the uniformity of the film quality. An object of the present invention is to provide a semiconductor thin film that can reduce the production capacity and can form a high crystalline quality in view of the foregoing points, and moreover, a semiconductor that can improve the film characteristics and uniformity of the semiconductor thin film at the same time. Method and device for manufacturing thin film, thin chirped crystal with excellent TFT characteristics such as electric field effect mobility of the semiconductor thin film, and manufacturing method thereof. Furthermore, the crystallization referred to in this specification covers the dual meanings of single crystallization and polycrystallization, and the method for producing a crystalline semiconductor thin film of the present invention is particularly useful when producing polysilicon. DISCLOSURE OF THE INVENTION The purpose of the present invention is to provide semiconductor films that do not cause a reduction in production capacity and that can form a high crystalline quality in view of the above points. Furthermore, the paper size is applicable to China National Standard (CNS) A4 (210X2) (97 public waste) Please read the note of the back first. Bookmark this page for binding 17 V. Description of the invention (15) 'Semiconductor thin film manufacturing method that can simultaneously improve the film characteristics and uniformity of semiconductor film And device, and a thin film transistor having excellent tint characteristics such as electric field effect mobility using such a semiconductor film, and a method for manufacturing the same. In order to solve the above problems, the results obtained by the inventors and others through various reviews' are focused on the reason why the crystal grains of the polycrystalline stone film become smaller because of the temperature distribution of the stone film when it is irradiated with excimer laser light. A method of forming a polycrystalline thin film having a large particle diameter at least in a region where the transistor is formed is conceived. That is, when the present inventors completed the research on the polycrystallizing treatment by laser, the region where the transistor is formed is pinched, and the regions having high thermal conductivity are provided on both sides of the region. In the case where the temperature of the target region becomes higher and the temperature of the transistor formation region is relatively lower than the surroundings, it is possible to obtain a crystal film with a minimum crystal size and then increase the particle size. Printed by the Chinese Ministry of Economic Affairs, China Bureau of Standards and Technology, and printed by DuPont. Therefore, the invention of the patent application item No. 丨 is characterized by including a first insulating film on the substrate that has the first thermal conductivity, and A step of laminating a second insulating film having a different thermal conductivity and selectively forming a second insulating film on a partial region; and laminating a non-single-crystal semiconductor thin film on the aforementioned first insulating film and the second insulating film And a step of irradiating the non-single-crystal semiconductor film with an energy beam to grow a crystal. Specifically, for example, by making the thermal conductivity of the insulating film of the amorphous silicon thin film mutually different in the region where the transistor is formed and other regions, the scale standard is applied to the Chinese National Standard (CNS) A4 specification (210X297). Male foot) 18 $ 7303-V. Description of the invention (16% of amorphous silicon in the transistor region) The conductivity of the conductive film is higher than that of the amorphous silicon film in other regions. If this structure is used, because The temperature of the rhenium film in the region where the crystal is formed during polycrystallization is lower than in other regions, so crystallization starts from the region where the crystal is formed, so that the number of the region where the crystal is formed can be made larger. In addition, the invention according to claim 12 is characterized in that at least a part of the peripheral edge of the surface of the semiconductor film is provided with one or more protrusions extending in a direction slightly horizontal to the semiconductor film. The method completed by the present invention is briefly explained for the purpose of understanding the present invention. First, the present inventors repeatedly studied and reviewed the main reasons of the above problems of the prior art, although it is impossible to Clearly explained, only the following assumptions are the main reasons. That is, the occurrence of general crystal nuclei and crystal growth are generated by tempering the semiconductor film, and then cooled after being heated temporarily. Ministry of Economic Affairs 4-Printed by the Central Standards Bureau Zhengong Consumer Cooperatives —————— (Please read the notes on the back and fill in this page) However, in the prior art, The tempered semiconductor film is almost uniformly cooled regardless of its central portion and peripheral portion. As a result, since the crystal nuclei occur at random at approximately the same time, it is assumed that the crystal grain size It is difficult to control the orientation of the crystal. For this reason, the crystal nuclei may occur approximately simultaneously at relatively close positions. At this time, Jing Zhao interferes with each other in the process of crystal growth, and It becomes difficult to obtain a sufficient crystal particle size. As a result of intensive review of the above matters, the inventors have created "to make the crystal nucleus in the peripheral portion of the semiconductor film more than the crystal nucleus in the center portion at the paper scale applicable to China." country Standard (CNS) A4 now (210 X 297 mm) 19 407303 V. Description of the invention (π) I --------- ^ ------ ΐτ (Please read the precautions on the back before (Fill in this page) after the date and period occur, the nucleus or crystal growth occurs in the central part: the nucleus that occurs in the peripheral part toward the central part for crystal growth can not only control the size and crystal orientation of the crystal boat At the same time, the interference of the crystals during the growth of the crystals is prevented, and a sufficient crystal particle size ° is obtained. That is, according to the 12th scope of the patent application, the semiconducting after tempering In Zhao Membrane, the heat accumulated in the protrusions of Zhou Zhen is spread outward in multiple directions on the horizontal plane (for example, when the protrusions have a rectangular shape, three directions), and the heat accumulated in the central portion is in the horizontal plane. The inside can only escape to the uncooled peripheral edge; therefore, including the ridge, the peripheral edge is cooled considerably earlier than the central portion. As a result, the nucleus at the periphery also occurred earlier than the nucleus at the center, and before the nucleus occurred at the center or the crystal grew, the nucleus that occurred at the periphery had crystallized toward the center. Growth is therefore: control of body size and crystallization direction becomes possible. Thereby, it is possible to prevent the crystals in the body from growing and interfering with each other, and obtain a sufficient crystal grain diameter. According to Article 13 of the scope of patent application, only one nucleus'② crystal nucleus occurred in the protruding part, which constitutes the growth of crystals. In addition, according to the scope of patent application No. 14-15, the grain control of the crystal is relatively neat, and a nucleus surely occurs at each protrusion. According to No. 16 of the scope of patent application, the nucleus occurs and grows. The crystal grows further toward the center, at this time, it is relatively large compared to the immediately after.成长 Crystal growth toward the center and projection from the opposite side toward 210X2.97 mm) -20 ^ 07303

-A7 B7 5. Description of the Invention (is) The crystal growth toward the center is to predictably grow the crystal without interfering with each other as much as possible. According to item 18 of the scope of the patent application, the protruding portion is provided in a region corresponding to the gate electrode, and therefore, good conductive characteristics can be obtained. Furthermore, the method for manufacturing a semiconductor plutonium under the scope of application for patent No. 19 is characterized by including a step of forming an amorphous semiconductor film, and at least a part of the periphery of the amorphous semiconductor film in a slightly horizontal direction. A step of selectively forming one or more protrusions and a step of subjecting the amorphous semiconductor film having the protrusions to a tempering treatment to crystallize the amorphous semiconductor film. A semiconductor film manufactured in accordance with the scope of patent application 19 can produce the same effect as that in the scope of patent application 12. Furthermore, according to item 22 of the scope of the patent application, the crystal nucleus in the peripheral portion of the semiconductor film is generated earlier than the crystal nucleus in the central portion, and the crystal nucleus generated in the peripheral portion is caused to occur in the center. Before the nucleation of the part occurs or the crystal grows, the crystal grows toward the center, so the crystal size and orientation can be controlled. Thereby, it is possible to prevent interference between crystals during crystal growth and obtain a sufficient crystal grain size. In order to solve the above-mentioned problems, the invention described in claim 26 is characterized in that it has a channel region and a crystalline semiconductor layer disposed on both sides of the source region and the drain region of the drain region of the channel region. In the crystalline thin film transistor formed on the substrate, the aforementioned crystalline semiconductor layer is formed by crystallization of a non-single crystalline thin film, and it is used in the former paper scale (CNS) A4 Li (21〇 > < 297 Gongchu) (Please read the precautions for the noodles before filling out this page) Packing-Printed by the Central Standards Bureau of the Ministry of Economy βς Industrial Cooperative Cooperative -21 ___407303 37 I—— 一-~~ — V. Description of the invention (丨 9) The crystal growth direction control gap controlling the crystal growth direction is provided on at least the channel region of the crystalline semiconductor layer. According to the above configuration, the crystal growth direction control void formed in the channel region controls the crystal growth direction of the channel region during the crystallization of the non-single crystalline thin film. Therefore, a crystalline semiconductor layer formed with such a crystal growth direction controlling void can be used to limit the crystal shape and crystal intercrystalline density. Therefore, the crystalline thin film transistor having the above structure has excellent TFT characteristics such as mobility of electric field effect. Here, the above-mentioned crystal growth direction controlling voids are at the low depressions (concavities) formed on the surface of the crystalline semiconductor layer (non-single-crystalline thin film in the manufacturing stage), and the low depressions can reach the lower layer of the crystalline semiconductor layer. (Substrate surface or undercoat layer), or those below the lower layer. Therefore, the size and thickness of the surface of the crystalline semiconductor layer, the desired electric field effect mobility, and the like can be considered in order to appropriately set it. For example, the shape of the surface can be exemplified by circular or square pits or slender grooves, and the shape of the cross section of the pits or grooves can be exemplified by C-shapes, V-shapes, and 3-shapes. In addition, the crystal growth direction controls the role of voids. The function will be detailed later. Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives-^ ---; --- ΐτ (Please read the notes on the back and fill out this page) The characteristics of the invention described in the 27th scope of the patent application are: A crystalline semiconductor layer having a channel region and a source region disposed on both sides of the aforementioned channel region and a drain region is formed in a crystalline thin film transistor formed on a substrate. The aforementioned semiconductor layer will not be a single crystal. A thin film is formed by crystallization, and at least two channel-shaped gaps are provided in at least the channel region of the crystalline semiconductor layer in a direction connecting the source region and the non-polar region. This paper size applies to Chinese national standards (CNS> Λ4 specifications (210 > < 297 Gong ^ ~ ·---22-407303 A7 B7) Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs In the structure, since the two or more rows of groove-shaped voids are formed during the crystallization of the non-single-crystalline thin film, the growth direction of the crystal is directed toward the time when the source region and the secret region are connected, so the result is polysilicon. The film becomes a collection of long and large crystal grains in the direction connecting the source region and the drain region. This type of money is because the crystal density in the direction connecting the source region and the drain region is small. Therefore, the carrier movement speed in this direction is fast. That is, the crystalline f thin film transistor having the above structure has excellent characteristics of carrier mobility, etc. Here, it will be described in detail while referring to Figs. 11 and 20 The reason why crystal growth control voids are provided to obtain large crystal grains with controlled crystal growth direction is shown in Fig. 20. As shown in Fig. 20, non-single crystals of the precursor before rhenium is a crystalline semiconductor layer On the surface of the film, two or more rows of groove-shaped crystal growth directions are formed along the direction connecting the source region and the drain region to control the void (symbol 411), and then the film is irradiated with an absorbable energy beam according to a general method. When the temperature of the thin film surface is formed, the temperature of the crystal growth direction control gap and its vicinity and the peripheral edge of the semiconductor thin ridge are low, and the channel region body portion (the film portion where the crystal growth direction control gap is not formed) has a high temperature distribution. It ’s compared with other parts, the thickness of the thin film is thinner than other parts, or there is no thin film, so there is less energy beam absorbed. As a result, the temperature of the groove part is similar to that of other parts. The ratio becomes lower. Also, there is usually no thin film on the outer side of the semiconductor thin film, so the absorbed energy beam is small. At the same time, the thermal system diffuses to the outside at the peripheral edge. The paper scale applies the Chinese National Standard (CNS) A4 specification (210X297 mm). --------- Install I ^ ----- Order (please read the precautions on f. Before filling this page) 23 .A7 B7_ V. Invention Ming (21) ', so the temperature is lower compared to the central part of the thin Qi. Secondly, the process of crystal growth in a non-single-crystalline film with a crystal growth direction controlling void and a low-temperature distribution at the periphery will be explained. In addition, the case where the temperature of the peripheral portion of the non-single-crystalline film is low is the same as that of the prior art, so it will be explained with reference to FIG. 丨. Fig. 11 is a diagram for conceptually explaining the crystal growth method. First, A crystal nucleus is generated around the space where the crystal growth direction is also lower than that of the body part, and the crystal nucleus is generated. Then, the crystal nucleus moves to a higher temperature as the temperature of the entire film decreases. Grow away from you (vertical to the trench). Here, in the above configuration, since the crystal growth direction controlling voids are provided in two or more rows along the direction connecting the source region and the drain region, crystals generated near the voids are controlled in two opposite crystal growth directions. The nuclear system grows from the opposite direction toward the center of the body part of each channel area. Printed by the Central Laboratories of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives II ~ ^ Order (please-read the precautions on the back, and then -4 write this page) Therefore, the crystal grains meet each other near the center of the body part of the channel area. Said that the growth direction of the ship controls the temperature near the center far from the gap, and the temperature is higher than other parts, and the molecules are still in a state of free movement. Therefore, 'avoiding the direction of the junction, the material crystal grows in a direction (parallel to the trench) connecting the source region and the non-polar region (see FIG. 11a). As a result, long and large crystal grains are formed in a direction connecting the source region and the non-polar region (see FIG. 11b). · If the channel region is formed by an aggregate of crystal grains of this shape, since the crystal intercrystalline density in the direction connecting the source region and the non-polar region is small, a crystal having excellent TFT characteristics such as electric field effect shift and mobility can be formed. Thin film transistor. The size of this paper is toward Chaojia County (CNS) Α4 · _ (21Qx29 ^^ y 24 4073C3 V. Description of the invention (22) The feature of the invention described in item 28 of the scope of patent application is that it connects the source region with the drain The direction of the polar region is discontinuously provided with the aforementioned crystal growth direction controlling voids in the plurality of patent application scope items No. 26. The right is a structure in which a plurality of crystal growth direction controlling voids are arranged discontinuously, and the crystal growth is further reduced. Control, especially in the case where two or more rows of crystal growth direction control gaps are arranged, the size and shape of the crystal grains can be further increased in a relatively small scale to control. The reason is as follows. As explained in the item 27 of the range, crystal nuclei are generated near the crystal growth direction control voids that have fallen earlier / JR to the crystallization temperature. If the interval between the individual crystal nuclei is narrow, it will occur before full growth. It collides with other crystal grains to stop the crystal growth. Therefore, many tiny crystal grains form polycrystalline material, and the crystal structure is near the interface where the crystal grains collide with each other. It will become deformed; therefore, desired TFT characteristics cannot be obtained. From this situation, it can be seen that, in order to improve the TFT characteristics such as the electric field effect mobility, it is necessary to appropriately control the density of crystal nuclei while controlling the crystal growth direction. Here, if the voids are arranged discontinuously, although crystal nuclei may be generated near the voids, it is difficult to generate crystal nuclei in the middle of the voids and adjacent voids. Therefore, by adjusting the number of voids and the voids, The interval can control the occurrence density of crystal nuclei ^. Moreover, the situation where it is difficult to generate crystal nuclei in the middle part of the gap and adjacent gaps is because this part (the part where the thin film material exists) is irradiated by laser Please read first. Note 2 of the back 1¾ 2 Binding of Seals of the Central Laboratories of the Ministry of Economic Affairs, Shellfish Consumption Cooperatives. 25 Printing of A7 B7 Duties of Consumers' Cooperation, Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (23) ~ The invention with the scope of patent application No. 29 is based on a channel region formed on a substrate and source regions arranged on both sides of the aforementioned channel region. In the crystalline thin film transistor composed of the semiconductor layer in the drain region, the foregoing junction B refers to a semiconductor layer formed by crystallization of a non-single crystalline thin film; it is characterized in that a phase is provided at least in the channel region. Compared to the channel region body part, the early crystallization region with a higher crystallization start temperature. According to the above-mentioned structure, as a result of the function of controlling the crystal growth of the channel region body part, the early crystallization region can form a crystal with a small intercrystalline density. A good crystalline semiconductor layer. The reason is as follows. Because the early crystallization region and the channel region body are relatively high in the temperature at which the crystallization starts, the crystal nucleus is first generated in the initial early junction region during the cooling process. Therefore, crystal growth was then performed with the crystal nuclei as the center. Therefore, by setting the early crystallization region, it is possible to prevent many crystal nuclei from being generated at the same time. As a result, larger crystal grains can be assembled into a polycrystalline semiconductor layer. Here, the early crystallization region may be provided at least “solid” in the channel region, and a plurality of early crystallization regions may be provided at positions that do not prevent carriers from moving in a direction connecting the source region and the drain region. By dispersing a plurality of early crystallization regions at appropriate positions and intervals on the film surface, the formation density of the crystal nuclei can be appropriately controlled, so that better results can be obtained. Furthermore, the so-called "start of crystallization" in the above configuration "High temperature" means that it starts to crystallize at a higher temperature than the body part of the channel area. The invention characteristic of the 30th scope of the patent application is that the Chinese paper standard (CNS) A4im (210 × 2 ^ 5 ~) is applied to the paper size in the scope of the patent application. M. Ii 1 ^^ I. «^ 0 ^ ml -li n ^ i ·! · __ w -J = ° (Please read the precautions on the back before filling out this page) 26 407303 A7 ____ B7 V. Description of Invention (24) In the crystalline thin film transistor described in item 29, the aforementioned The early crystallization and crystallization field is an elongated object along the direction connecting the source region and the drain region. Because the early crystallization region is not a region that can move carriers, the range of the direction of the region relative to the source region and the drain region is narrow. I |

should. The reason is that if the early crystallization region is elongated in a direction that intersects the source region I with the direction of the drain region at right angles to each other, the early crystallization region becomes a factor that hinders carrier mobility. The 31st invention characteristic of the scope of patent application is, in the scope of patent application |

In the crystalline thin film transistor described in item 29, the aforementioned early crystallization region I domain is formed by containing the constituents of the channel region body portion and impurities, and if the impurities are contained in the semiconductor layer, it will be raised. By means of the crystallization start temperature, an early crystallization region can be formed relatively easily. Therefore, the crystalline thin film transistor having the above structure has excellent TFT characteristics such as electric field effect mobility, and is inexpensive. The feature of the invention in the 32nd patent application scope of the Central Standards Bureau of the Ministry of Economic Affairs for the printed application scope of the patent application is that, in the crystalline thin film transistor described in the 26th scope of the patent application scope, the aforementioned crystalline semiconductive layer is made of silicon. , Or silicon and germanium compounds as the main component. Silicon, or a compound of silicon and germanium, is not only easy to obtain but also easy to crystallize. Therefore, with the above configuration, a high-quality crystalline thin film transistor can be provided at a low cost. The inventions described in the following patent applications Nos. 33 to 39 are related to the method for manufacturing crystalline thin film transistors in the aforementioned patent applications Nos. 26 to 32. The application of inventions with the scope of patent applications Nos. 33 to 39 is roughly the same as the above-mentioned paper standard applicable to the Chinese National Standard (CNS) M Appearance (published by am97) 27 Printed by the Consumers' Cooperative of the China Standards Bureau of the Ministry of Economic Affairs 407303 The description (25) is the same as that described in the description of the 26th to 32nd patent application. Therefore, a detailed description of the effects will be omitted below. The invention claimed in item 33 of the patent claim relates to a method for manufacturing a crystalline thin film transistor, which is equipped with a crystal region having a channel region, a source region disposed on both sides of the channel region, and a crystalline region of an electrodeless region. Semiconductor layer. The manufacturing method of the crystalline 4-film electro-crystal Zhao includes at least a step of depositing a non-single-crystalline film on an insulating substrate; a step of forming a crystal growth direction control void on the aforementioned single-crystalline film; and a step of forming crystal growth A step of irradiating an energy beam on a non-single-crystalline semiconductor film with direction-controlled voids to crystallize the thin film. '纟 The above-mentioned patents are issued on the basis of item 33, which can form the aforementioned crystal growth direction control gap in the direction connecting the source region and the drain region as: 冓 & mx further in the source region A plurality of voids are formed discontinuously by controlling the growth direction of the aforementioned crystals in the direction of the electrodeless region. According to these structures, the crystalline thin film transistor of the above-mentioned application patent scope Nos. 26 to 28 can be produced. The invention in the 36th aspect of the patent application relates to a method for manufacturing a crystalline thin film transistor, which is formed by forming a crystalline semiconductor layer having a channel region and a source region and an electrodeless region arranged on both sides of the channel region. The method for manufacturing a crystalline thin film transistor includes at least a step of depositing a non-single crystalline film on a sexual substrate; implanting ions in a portion of the aforementioned non-single crystalline semiconductor film to increase the crystallization of the portion Impurities at the starting temperature to form an early crystallized region forming step including an early crystallized region containing the impurities; and the aforementioned early crystallized region forming step The paper size is applicable to China National Standard (CNS) A4 (210 X 297) Guang) (please read the precautions on the back before filling out this page) i--, 11 28 Printed by the consumer cooperation department of the Central Standards Bureau of the Ministry of Economic Affairs ^ 07303 λ? _____B7 5. After the invention description (26), irradiate the energy beam To perform the crystallization step of the thin film. In the issue date of item 36 of the aforementioned patent application scope, through the aforementioned early crystallization region forming step, a long band-shaped early crystallization region can be formed in a direction connecting the aforementioned source region and the aforementioned drain region; more The early crystallization region can be arranged discontinuously in a direction connecting the source region and the drain region. With these structures, the crystalline thin film transistor of the aforementioned patent application scope items 29 to 31 can be produced. In addition, in each of the above inventions related to the manufacturing method, as the aforementioned energy beam, an excimer laser can be used. The excimer laser not only has a large light energy, but also can be well absorbed by silicon because it is a light source. Therefore, if an excimer laser beam is used, crystallization of a non-single-crystalline semiconductor layer can be efficiently performed, particularly in the case where a non-single-crystalline semiconductor layer is composed of an ultraviolet-absorbing substance such as silicon. Ground only heats the semiconductor layer to melt it. Therefore, there is no adverse thermal effect on parts other than the irradiated area, and because the semiconductor layer is crystallized, the increase in the substrate temperature is small, so that inexpensive glass substrates can be used. Furthermore, 'if it is a combination of excimer laser and UV-absorbing osmium film material, since the temperature difference between the crystal growth direction controlling void and the semiconductor layer body portion becomes larger, the function of the crystal growth direction controlling void (control The function of the crystal growth direction) can be fully exerted. Further, based on the above-mentioned discussion on the mechanism of crystallization, the present inventors have earnestly studied a method for sufficiently growing a crystal. As a result, by deliberately making the light intensity distribution in the beam range non-uniform, the crystal capture standard is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) I --------- ^ -------, 1T (Please read the precautions on the back before filling out this page) 29 ΑΊ B7 Printing of White No.5, Invention Description (27) by the Central Standards Bureau of the Ministry of Economic Affairs As a result, it was found that a crystalline thin film of good f can be obtained. Based on the above-mentioned knowledge, the following constitutions have been completed. That is, the invention according to item 40 of the scope of patent application is characterized in that the aforementioned non-monocrystalline material is crystallized or recrystallized by irradiating a light beam on a thin film composed of non-monocrystalline material formed on a substrate. In the method for manufacturing a crystalline semiconductor thin film that forms a crystalline semiconductor thin film, as the above-mentioned light beam, a method of forming an uneven temperature gradient or temperature distribution on the surface of the aforementioned film on the illuminated surface is used to adjust A beam of light whose intensity distribution varies. With this structure, the temperature gradient or temperature distribution on the surface of the non-single-crystal film irradiated by the beam is uneven, so it is possible to prevent the simultaneous generation of minute crystal nuclei in a wide range as described in Section 7f above. , G The phenomenon illustrated in the figure. Therefore, a relatively large crystal grain can be obtained, and the homogeneity of the degree of crystallinity can be improved. As a result, the intercrystalline density of the crystal becomes smaller, and the mobility of the electric field effect increases. The invention of item 41 in the scope of patent application is characterized in that, in the method for manufacturing a crystalline film contained in item 40 in the scope of patent application, as the aforementioned beam, the use of light intensity within the beam range is —Patterns that monotonically increase towards each other ', or decrease monotonically towards others. According to this structure, a temperature gradient is formed on the surface of the non-single-crystalline film corresponding to the light energy intensity according to the level of the light energy, and the place where the crystallization temperature is low is induced in the direction of high temperature. Because &, because there is no ;: said: the generation of the nucleus and the growth of disordered crystals are prevented ', so it can be reliably prevented (cns). ^ Ϋ n--t- ml I-m ^ ii, nn 1 In {IffJ (Please read the notes on the back before filling out this page) 30 Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 407303 V. Description of the invention (28) The phenomenon described in Figures 7f and g above. Here, when a crystalline film is used in, for example, a semiconductor circuit composed of a source region, a channel region, and a drain region, light energy is formed in a direction parallel to the source-drain direction. The intensity gradient is. In this way, the direction of crystal growth is limited to a direction parallel to the moving direction of the carrier, and the intercrystalline density of the crystal in this direction becomes smaller. Therefore, "by adopting this method", for example, a degree of movement of 300 cm2 / Vs or more can be achieved. The invention characteristic of the 42nd patent application is that the crystalline film described in the 40th patent application In the manufacturing method, as the aforementioned light beam, a light beam having a circular distribution pattern in which the relative light intensity knife and the relatively weak light intensity portion are arranged alternately in a plane in the beam range is used. When irradiated with a light beam having a band-shaped pattern composed of a strong light portion and a weak portion, a band-shaped temperature distribution pattern composed of a high-temperature portion and a low portion can be formed on the irradiation surface. In such a band-shaped foxness distribution pattern, crystal growth is induced from a portion where the temperature is low (a band-shaped formation of tadpoles) is directed toward a portion where the temperature is high. The crystal grains collide near the central part of the high-temperature part (band), where a continuous line (such as a mountain-like continuous line) between the crystals is formed, and a slightly longer direction is formed in a direction parallel to the continuous line. Crystal grains. Therefore, according to this structure, the phenomenon described in the above-mentioned 7f and g diagrams can be prevented, and the same effect as that of the invention in the 41st patent scope can be obtained. That is, make the relative light intensity of the paper size suitable for the country ^ standard (cm) ^ —. 1 »i In II--i 1 n ^ — — ^ ϋ i (Please read the precautions on the back first (Fill in this page again.) 31 Consumption cooperation by employees of the Central Standards Bureau of the Ministry of Economic Affairs. A 7 ____B7 V. Description of the invention (29) The area and the area with weak light intensity are arranged parallel to the source-drain direction for crystallization " In this way, the collision line of the crystal grains becomes parallel to the source-drain direction, and the collision line (the boundary line between the crystal grains) that traverses the crystal grains becomes the cause of the drastic decrease of the carrier mobility. Therefore, a channel region having a high degree of movement can be formed. The invention of item 43 of the scope of patent application is characterized in that in the method for manufacturing a crystalline film described in the scope of application of the patent scope, as the aforementioned beam, at least two mutually coherent lights are irradiated simultaneously, and A pulsating interference pattern is formed by dynamically modulating the optical phase of at least one of the aforementioned lights. In the configuration using a dynamic light interference pattern, the energy intensity distribution of the light beam fluctuates, and correspondingly, the temperature of the irradiation surface moves in one direction and fluctuates. Therefore, with this configuration, the impurities contained in the amorphous thin film can be gradually pushed out of the effective region, and as a result, a crystalline thin film having high purity and excellent mobility can be formed. Furthermore, in the method for manufacturing a crystalline thin film described in the above-mentioned application patent scope Nos. 40 to 44, the aforementioned light beam may be irradiated while relatively moving the non-single crystalline thin film on the substrate. If the temperature gradient or uneven temperature distribution is generated on the irradiated surface (non-single-crystalline thin film surface), while the light beam whose adjusted distribution pattern of the light energy intensity is relatively moved to the thin film surface, q is added. The structure of the irradiation can induce the crystal growth direction on a very small scale. Therefore, it is possible to obtain a good crystalline film having a high degree of uniformity of crystallinity and a small intercrystalline density of crystals in a certain direction. This paper is suitable for SS home counties (CNS) (21GX297 male thin)! · III i -I--m--I -III ·-i 1 -I tj— —I --——. (Please read the back first Please pay attention to this page before filling in this page) 32 407303 • A7 B7 surface, please V. Description of invention (30 invention patent item No. 45 invention feature is that the beam is irradiated by non-single crystal material formed on the substrate In the manufacturing method of the formed thin film, it is then exothermed to crystallize or recrystallize the non-single crystalline semiconductor film. The method is to maintain the atmospheric pressure of the environment at a certain value or more so that A non-uniform temperature distribution is generated on the surface of the film irradiated by the light beam. With this configuration, the gas molecules constituting the atmospheric gas collide with the film w and move away from the tropical zone of the film to form a localized low-temperature portion. It occurs in this part, and this crystal nucleus promotes the growth of Jing Zhao, so it can prevent the phenomenon as described in the above 7f, g circle. The invention feature in the 46th patent application is characterized in the 45th patent application. Crystalline thin film In the formation method, when the atmospheric gas is hydrogen, the atmospheric pressure above a certain value is above 10-5_. If laser tempering is performed in a hydrogen pressure of 10-5 ton · or more, the specific heat is 1¾ The motion of the hydrogen molecule can definitely obtain the action and effect described in item 45 of the above-mentioned application range. "In order to solve the above-mentioned problem, the invention of item 47 in the patent application is a method for manufacturing a semiconductor film, which is characterized by The first energy beam having the energy of the precursor semiconductor film formed on the substrate is at least equal to the energy of the precursor semiconductor film that can crystallize the precursor semiconductor film and is greater than the first energy. Beam, the absorption of the precursor semiconductor film :! Also, the energy given to the precursor semiconductor film is smaller than the energy that can crystallize the precursor semiconductor film. The second energy beam makes the crystal of the precursor semiconductor film smaller. K paper size is applicable -I.--I-——- I-HI I—--n. I-^ 1 II--i {1 1 I-* 、 T (Please read the back of 4. (Notes for filling in this page) Printed by the Ministry of Economic Affairs of the Central Bureau of Standards of the People's Republic of China for Du Duan 33 Printed by the Consumers' Cooperative of the China Standards Bureau of the Ministry of Economic Affairs-A7 ------------ B7 _ V. Description of the Invention (31) —- The second energy beam can easily reach the lower part of the precursor semiconductor film and the substrate, and the precursor semiconductor film is heated at the same time as the substrate is heated, and the first amount of light beam is irradiated and after the irradiation is completed. The temperature difference is reduced. Therefore, the precursor semiconductor film is heated and melted by the irradiation of the j-th energy beam. After the irradiation is completed, the semiconductor film is slowly cooled and crystallized. Therefore, crystal growth is promoted, and crystal defects are reduced while relatively large crystal grains are formed, and the electrical characteristics of the semiconductor film are improved. The invention of claim 48 in the patent scope is a method for manufacturing a semiconductor film in the scope of patent application 47, and the above-mentioned precursor semiconductor film is a non-crystalline anthracene silicon thin film as its feature. This makes it possible to easily form a polycrystalline silicon thin film having good crystal quality and good electrical properties such as electric field effect mobility. The invention of the 49th scope of the patent application is a method for manufacturing a semiconductor film in the 47th scope of the patent application. The absorption coefficient of the precursor semiconductor film of the energy beam is approximately the reciprocal of the film thickness of the precursor semiconductor film, and the absorption coefficient of the precursor semiconductor film of the second energy beam is substantially the precursor semiconductor film. Characteristic is the inverse of the film thickness. Thereby, on the one hand, many first energy beams are absorbed near the surface of the precursor semiconductor film, and many second energy beams reach the lower part of the precursor semiconductor film and the substrate, so the precursor semiconductor film is efficiently At the same time of ground heating, the substrate is also heated, and after the first energy beam irradiation is completed, it is slowly cooled and promotes the growth of the crystal. Therefore, (CNS) A4 · (210X297 mm) ^ 衣 ^; Order ( Please also read the precautions for face-free, and then fill out this page) 34 ^ 07303 V. Description of the invention (32) Form a relatively large crystal and form a rich conductor film with good crystal quality. The invention with the scope of patent application No. 50 is the manufacturing method of the semiconductor film with scope of patent application No. 47. The absorption coefficient of the precursor semiconductor film of the energy beam is approximately 10 times or more the inverse of the film thickness of the precursor semiconductor film, and the absorption coefficient of the precursor semiconductor film of the second energy beam is approximately the precursor semiconductor film. The inverse of the film thickness is its characteristic. Thereby, the precursor semiconductor film is heated more efficiently, and a semiconductor film with better crystal quality is formed. Application. The invention of item 51 of the patent scope is the method of manufacturing the semiconductor film of item 47 of the scope of patent application. The feature of the above-mentioned 丨 energy light ′ and the second energy beam is light with different wavelengths. Thereby, it is possible to easily impart a difference in absorption rate as described above. The above-mentioned light having different wavelengths can be applied, for example, the first energy beam is a single-wavelength energy beam, and the second energy beam is light containing at least a wavelength component in the visible light region. Printed by Industry and Consumer Cooperatives t. ^ --- ΐτ (please read the precautions on the image surface before filling out this page) More specifically, the first energy beam and the second energy beam can be used by the user, for example, laser light and Infrared light, laser light and incandescent light, or laser light and excimer light. As described above, light systems having different wavelengths can be used. For example, the second energy beam is a xenon flash lamp or the like, and it contains at least light of a long-length component from the visible region to the ultraviolet region. The first energy beam and the second energy beam described above may be laser light. In other words, if laser light is used, it can be easily irradiated at the energy-tight paper scale. China National Standards (CNS) Α4 Zhuge (210X297 mm) 35 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economy ~ _________ B7 __ V. Description of the invention (33) A large energy beam, so that the precursor semiconductor film and substrate can be easily and efficiently heated. Specifically, for example, when the precursor semiconductor film is an amorphous silicon thin film, the first energy beam may be an argon-fluorine excimer laser, a krypton-fluorine excimer laser, a xenon excimer laser, or a xenon-fluorine laser. Any kind of laser light in an excimer laser; and the above-mentioned second energy beam may use laser light of an argon laser. When the substrate is a glass substrate and the precursor semiconductor film is an amorphous silicon thin film, the first energy beam may be an argon fluoride excimer laser, a krypton fluoride excimer laser, or a xenon excimer laser. Or any kind of laser light of xenon fluoride excimer laser; and the second energy beam can use the laser light of carbon dioxide gas (carbon dioxide) laser. On the one hand, the above-mentioned various excimer laser systems are easy to obtain large output power and are easily absorbed near the surface of the amorphous silicon thin film; and the laser light of the argon laser penetrates the amorphous silicon thin film to a certain extent, and is easy to It is absorbed across the thickness direction of the amorphous stone film; the laser light of the laser diode breaks through the amorphous hard film rather than ㈣, which is easily absorbed by the glass substrate and can be more efficiently. The Shi Xi film is heated; therefore, a polycrystalline Shi Xi film with good crystal quality can be easily formed, and at the same time, productivity can be easily improved. The invention according to the 61st patent application scope is a method for manufacturing a semiconductor film under the 47th patent scope, and the above-mentioned energy beam and the second energy beam are characterized by a band-shaped region irradiated on the precursor semiconductor film. . (CNS) A4 ^ (2l ^^ iT --- I —JI ^ Order (please read the notes on the bones and fill in this education) 36-Α7 Β7 V. Description of the invention (34 The shaped region can be easily heated with a uniform temperature distribution, and a semiconductor film of the same crystal quality can be easily formed. At the same time, the time required for the crystallization step can be easily shortened. "Scope of Patent Application No. 62 The invention of claim 1 is a method for manufacturing a semiconductor film according to item 47 of the patent application, and the irradiation area of the precursor semiconductor film with the illumination in the second energy beam is larger than that in the aforementioned energy beam. The irradiation area of the precursor semiconductor film is large, and it includes the irradiation area of the first energy beam, which is characteristic of the irradiation area. Thus, it can be easily heated with a uniform temperature distribution, and the same can be easily formed. Crystalline quality semiconductor film. An invention claimed in item 63 of the patent scope is a method for manufacturing a semiconductor film in item 47 of the patent scope, and the i-th energy beam and the second energy beam are used. It is characterized by irradiating the above-mentioned precursor semiconductor film in a substantially perpendicular incidence manner. This is printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, because each energy beam is incident on the above-mentioned precursor substantially perpendicularly. The semiconductor film 'reduces the phenomenon of uneven irradiation of the energy beams, so it can be easily formed. A semiconductor film with the same crystal quality as the one in the patent application No. 64 and the invention is the semiconductor in the patent application No. 47 The method of manufacturing a film is characterized in that the second energy beam is irradiated at least prior to the irradiation of the first energy beam. The irradiation of the second energy beam before the first energy beam is controlled by controlling each energy. In addition to the timing of beam irradiation, it can also be implemented by, for example, applying the Chinese paper standard (CNS) to the paper scale. A4 Zhuge (2 丨 Ο X 297 公 楚 37 A7 • B7 Staff of the Central Standards Bureau of the Ministry of Economic Affairs Consumption Cooperation Du Print 5. Description of the Invention (35) While the substrate on which the above-mentioned semiconductor film is formed is moving, the above-mentioned second month color beam is also In the above-mentioned precursor semiconductor film, the first energy beam "'" and the emission position are irradiated at positions on the front side of the moving direction, and so on. By performing such irradiation, the semiconductor film And the substrate is fully heated by the second energy beam, and then crystallization is performed by the second energy beam, so a high-efficiency crystallization step can be performed. The invention in the 66th scope of the patent application is the 47th in the patent scope. According to the method for manufacturing a semiconductor film, the first energy beam is intermittently fired three times, while the second energy beam is continuously irradiated as a feature. For example, Zhao can use ❹pulse❹ The laser light is used as the first energy beam ', and the second energy beam can use continuous laser light and lights. In this way, by continuously irradiating the second energy beam, the substrate and the precursor semiconductive rhyme can be easily heated to a predetermined stable temperature. At the same time, the first energy beam is intermittently irradiated to at least suppress the transmission of the energy to the substrate. On the one hand, heat conduction prevents melting and deformation of the substrate due to excessive heating. On the other hand, the crystallization of the precursor semiconductor can be easily and reliably performed. The invention according to claim 6 and claim 9 is a method for manufacturing a semiconductor film according to claim 47, which is characterized in that the i-th energy beam and the second energy beam are simultaneously and intermittently irradiated with each other. The specific irradiation timing is within the period in which the second energy beam is irradiated, and it is preferable that the period of the irradiation period of the second energy beam is less than 2/3 of the period of time ... This paper financial standard (CNS) A4 although ( 210X297 mm) '~~~ ---- -38-Preparing ^ \ Order ------,' ^ (Girls should read the precautions of f · face before filling in this page)

Printed by the Consumers 'Cooperatives of the Central Government Bureau of the Ministry of Economic Affairs I A7 _ B7 _ --- — ^ 1 II | " *' ~ || _ V. Description of the invention (36) Specific energy beam systems can use pulse oscillation The laser light is used as the first energy beam, and the second energy beam can use the pulsed laser light and the light meter generated by intermittently turning on the light. In this way, by intermittently irradiating the first energy beam and the second energy beam ', it is possible to easily irradiate a large amount of light per unit area, and since the substrate can be prevented from melting and deforming due to excessive heating, it is possible to Since heating is performed with a large amount of energy, the precursor semiconductor film can be easily and reliably crystallized. In particular, the pulsed laser light is not only easy to obtain large output power, but also can be easily heated to high temperature across a large area. Therefore, the time required for the crystallization step can be easily shortened and the productivity can be improved. The invention of 73 or 74 is a method for manufacturing a semiconductor film according to item 47 of the patent application, characterized in that the first energy beam and the second energy beam heat the precursor semiconductor film to 300. 〇 'above 1200 ° C; more preferably, it is heated to a temperature above 600 ° C and below 110 ° C. By heating the precursor semiconductor film to a temperature in this range, it is possible to prevent the semiconductor film from being partially heated. Crystal defects and non-uniform crystallization caused by fine crystals' cause the temperature to change slowly during crystallization to promote crystal growth, and large crystal grains can be easily formed. The 75th invention of the scope of patent application is an application The method of manufacturing a semiconductor film according to the 47th aspect of the patent includes a step of heating the substrate on which the precursor semiconductor film is formed by a heat source. Specifically, for example, the substrate on which the precursor semiconductor film is formed is heated to 3 〇〇Begging above ---------- Strike ^. Order (please λ-. Read t.® · Notes again. 4 Write this page) 39 I ----'— V. _ ^ 0 ~ 3C3 Invention Description (37) A7 B7 Printed by the Consumer Cooperatives of the Central Bureau of Standards, Ministry of Economic Affairs, the temperature below 600 ° C is suitable. In this way, by adding a second energy beam and heating the substrate with a heat source, it can be more Efficiently heating precursor semiconductor film At the same time, it is easy to slowly promote crystal growth. Compared with the case where the substrate is heated only by a conventional heater, it can be heated to a predetermined temperature in a short time, so the productivity can be easily improved. The invention of item 77 is a method for manufacturing a semiconductor film according to item 47 of the patent application, characterized in that, while the aforementioned energy beam is irradiated to a plurality of regions in the precursor semiconductor film, the second energy beam is irradiated only to A part of the above-mentioned plurality of regions. Since this method of partially irradiating the second energy beam can only improve the crystallinity of, for example, a region that particularly requires high electrical characteristics, it can easily be achieved in a short time. The crystallization step performs necessary and sufficient crystallization and improves the productivity. The invention in the 78th patent application is a method for manufacturing a semiconductor film in the 47th patent application, characterized in that the second energy beam is The absorptivity of the substrate is larger than that of the precursor semiconductor film. Further, The first energy beam is preferably one in which the absorption coefficient of the precursor semiconductor film is approximately 10 times or more the reciprocal of the film thickness of the precursor semiconductor film. Specifically, for example, when the overfill substrate is a glass substrate, and When the precursor semiconductor film is an amorphous silicon thin film, the first energy beam may be any of argon-fluorine excimer laser, krypton-fluorine excimer laser, xenon-chlorine excimer laser, or xenon-fluorine excimer laser. A kind of laser light; and the second energy beam is based on the Chinese standard (匚 ~ 5> 6 4 size (2! 0 / 2.9 * 7mm) -------- ^^ -^-1T (Read the notes on t. Before filling in this page) 40 A7 B7 4073C3 V. Description of the invention (38) The laser light of carbon dioxide laser can be used. By this, since many first energy beams are absorbed near the surface of the precursor semiconductor film, and many second energy beams are absorbed by the substrate, the semiconductor film is efficiently heated and the substrate is also heated. After the first energy beam is irradiated, it is slowly cooled to promote the growth of the μ body, so relatively large crystal grains are reliably formed, and a semiconductor film with good crystal quality is formed. The invention according to item 81 of the scope of patent application is a semiconductor film manufacturing device for crystallizing a precursor semiconductor film formed on a substrate, and is characterized in that it includes a first irradiation means for irradiating a first energy beam, and an irradiation ratio is i A second irradiation means of a second energy beam having a small absorptivity of the precursor semiconductor film of the energy beam. ^ With this, the second energy beam easily reaches the lower part of the precursor semiconductor film and the substrate, and the precursor semiconductor 臈 is heated across the thickness direction, and the substrate is also heated. The irradiation and completion of the first energy beam are completed The subsequent temperature difference is reduced. Therefore, the precursor semiconductor film is heated and melted by irradiating the energy beam, and after the irradiation is completed, it is crystallized while slowly cooling. Therefore, crystal growth is promoted to form relatively large crystal grains, and at the same time, crystal defects are reduced, so that a semiconductor film having improved electrical characteristics is manufactured. Item 82 of the scope of patent application is a device for manufacturing a semiconductor film according to item 81 of the scope of patent application, characterized in that the second irradiation means is a lamp that emits a second energy beam radially, and further includes the second energy beam. Condensing concave mirror. This paper size is applicable to China National Standards (CNS) (2) 〇297297 ---------- 1-^ --- ^-ΐτ (Please read #. 面 的 NOTE Please fill in this page again) Printed by the Consumers 'Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 41 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economics While heating and uniformizing the temperature distribution, a semiconductor film with the same crystal quality can be easily formed. Article 83 of the scope of patent application is a device for manufacturing a semiconductor film of scope of the patent application No. 81, further comprising: reflecting one of the first energy beam and the second energy beam, and causing the other It is constituted by a reflection plate that is penetrated by the light source and that any one of the first energy beam and the second energy beam is incident substantially perpendicularly on the precursor semiconductor film. In this way, by causing each energy beam to enter the precursor 'semiconductor film' substantially perpendicularly, the uneven irradiation phenomenon of each energy beam is reduced, so that after all, a semiconductor film of the same crystal quality can be easily formed. As a specific example of the first irradiation means and the second irradiation means described above, when the precursor semiconductor film is an amorphous sand film, the first irradiation means may use an argon fluoride excimer laser or a thallium fluoride excimer laser. Either of Xenon Excimer Laser 'or Gas Fluorine Excimer Laser'; the second irradiation means can use argon laser. When the substrate is a glass substrate and the precursor semiconductor film is an amorphous silicon film, the first energy beam may be an argon fluoride excimer laser, a krypton fluoride excimer laser, a xenon excimer laser, or xenon. Any kind of laser light in the fluoro excimer laser; the second energy beam can use the laser light of the carbon dioxide laser. In order to solve the above-mentioned problem, the invention in the 86th aspect of the patent application is for irradiating an energy beam to the g-scale including the screen display area and the drive unit. The g-scale applies the CNS A4 specification. -42-4G73C3-A7 ____-____ B7 V. Description of the Invention (40) A method for manufacturing a semiconductor thin film on a non-single-crystalline semiconductor thin film on a substrate in a road portion region for crystal growth, and its characteristics The first irradiation system irradiated onto the screen display area is performed using a large-volume beam whose cross-sectional shape is linear; on the other hand, the second irradiation system irradiated onto the drive circuit section area uses a cross-section using a light beam. The energy beam having a square shape is performed at a higher energy density than the first irradiation. In addition, the invention in the 87th aspect of the patent application is a semiconductor thin film having a step of irradiating an energy beam onto a non-single-crystal semiconductor thin film formed on a substrate including a screen display region and a driving circuit portion region to grow a crystal. The manufacturing method is characterized in that the first irradiation system irradiated onto the screen display area relatively scans the energy beam on the substrate, while scanning the irradiation beam while staggering the irradiation region of the energy beam by a predetermined overlap amount; On the one hand, the second irradiation to the region of the driving circuit portion is performed by relatively stationary irradiation with the energy beam fixed to the substrate, and is performed at a higher energy density than the first irradiation. The Ministry of Economic Affairs, China Bureau of Standards, Consumer Consumption Co-operation, printed 批 batch of clothes ----- 1T (please read the notes on f. Before filling out this page) Specific and t, such as the film constituting the liquid crystal display device The part of the transistor that requires the uniformity of the characteristics of the semiconductor film and the driving circuit part that has characteristics (especially the height of the mobility) are required to make the laser irradiation methods different from each other. The laser tempering of the amorphous silicon on the substrate to melt the amorphous silicon and then crystallize it to form polycrystalline silicon is to set the energy density of the laser light that is irradiated to the driving circuit portion area in the substrate. The laser light irradiated to the screen region has a high energy density to perform laser tempering, and forms polycrystalline silicon having different characteristics in the driving circuit region and the daytime facial region. This paper rule (CNS) 43 Printed by the Central Bureau of Standards of the Ministry of Economic Affairs and Consumer Cooperatives 4G73C3 -A7 ___ ___B7 V. Description of the invention (41) According to this structure, the mobility of the polycrystalline silicon in the area of the driving circuit becomes larger than the screen The mobility of the polycrystalline silicon in the region is high, on the one hand, the characteristics of the polycrystalline silicon in the screen region can be made uniform in the plane. Furthermore, by making the laser light linear when the first laser light is irradiated, and making the laser light square when the second laser light is irradiated, the laser can be performed without rotating the pedestal of the fixed substrate by 90 degrees. Tempering. Further, the first laser light irradiation is made by scanning irradiation with a plurality of irradiations while staggering the irradiation position of the laser beam, and the second laser light irradiation is made by fixing the irradiation position of the laser beam to Performing the static irradiation can increase the mobility of the polycrystalline silicon in the area of the driving circuit portion and achieve uniformity. In addition, by irradiating a plurality of regions in the driving circuit portion region with laser light having different energy densities to perform laser tempering, polycrystalline silicon having different characteristics can be formed in the driving circuit portion region. At this time, it is advisable to perform laser tempering in the latch (now 7 thousand) and the shape of the shift register. The area where the transfer gate is formed and other areas are illuminated with laser light having different energy densities. In a further laser tempering method, it is desirable to irradiate the laser light in such a manner that the laser beam end does not lie on the TFT pattern. In addition, the device for manufacturing a semiconductor thin film according to the present invention includes energy beam generating means, and means for uniformizing the energy beam emitted by the energy beam generating means into a predetermined beam cross-sectional shape with uniform energy; The system of irradiating the shaped energy beam onto a non-single-crystal semiconductor thin film formed on a substrate to grow a crystal n ^ iin n ^ ii nn nn n 1 ^ 1 * In * i 1 ni TJ body T ° (Please read the notes on the back before filling this page)

Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, A7 ------------- B7 _ _ V. Description of the invention (42) Manufacturing device; Furthermore, it is equipped with a penetrator including the above-mentioned energy beam A device composed of areas with mutually different transmittances; a device formed by penetrating the above-mentioned device and irradiating the energy beam with different energy densities on a plurality of areas in the non-single-crystal semiconductor thin film. With this configuration, 'a plurality of polycrystalline semiconductor films having different characteristics can be formed on the same substrate surface. "In the above-mentioned configuration, the laser tempering device whose transmittance of the photomask is changed due to an optical film or the like can be accurately formed. Moreover, by using a laser tempering device that integrates a window that can be irradiated to a mask and a substrate in a laser light processing chamber, the structure of the device can be simplified, and at the same time, the amount of light can be reduced. . It also has means for generating energy beams, and means for uniformizing the energy beam emitted by the energy beam generating hand & to form a predetermined beam cross-section shape with uniform energy; it irradiates the shaped energy beams to form A device for manufacturing a non-single-crystal semiconductor thin film on a substrate to grow a crystal, characterized in that the above-mentioned homogenizing means is constituted so that energy beams can be selectively converted into a plurality of beam cross-sectional shapes. . With this configuration, it becomes possible to irradiate laser light of the most appropriate shape at various positions on the substrate. Brief description of the pattern '. The first is a graph showing the transmittance characteristics of an amorphous silicon thin film. Figure _ is a plan view and a cross-sectional view of the general situation of a conventional thin film transistor (TFT). . ^ 1 · _!-»--1 ^^ 1 11-- ί I. I. Kt //--I 1 ^ 1 m > ^^ 1 I. I ^, T (Please read the notes on the back first (Fill in this page again) This paper size is applicable to China National Standard (Liyang) 8 4; 1 ^ grid (2 丨 〇 / 297 mm) 45 A7 B7

407303 V. Description of the invention (43) The illustration of the method for manufacturing the conventional polysilicon film not shown in Figure 3 Fig. 4 is a diagram showing the intensity pattern of a light beam having a light intensity distribution of the prior art. Schematic diagram β Fig. 5 is a schematic diagram showing the heterogeneity of the degree of crystallization in the crystallization region in the prior art. Figure 6 is the Raman intensity curve in the A-a line of Figure 5. It is an explanatory diagram for explaining a state of progress when a light beam having a flat light intensity distribution is used. The first, Xingji is shown in the conventional method of polycrystallized by laser light irradiation, said the town: dial / 〇 Figure 9 is a schematic diagram of the conventional laser tempering device. Fig. 10 is an explanatory diagram showing a laser tempering area of a liquid crystal display. The first is an explanatory diagram of a crystal length direction of an a-Si film provided with a crystal growth direction controlling void. The i-th poly / is an explanatory diagram of the principle of polycrystallization of Embodiment 1-1. (Yarn) The first curve shows the degree of crystallinity of the polycrystalline silicon thin film of Embodiment 1-1. ----------- Pulling clothes-(Please read the notes on t. Before filling out this page} Implementation Plan 1-2 TFT floor plan Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs The first 1: 5 平面 is a TFT plan view of the implementation mode 1-3. The 1H is the TFT plan view of the implementation mode 2-1. (^^). The TFT plan view of the implementation mode 2-1 is a sectional view. The sectional view illustrates the manufacturing steps of the first embodiment 2-1. The first is an explanatory diagram of the manufacturing steps of the implementation aspect 2-2. c4 &rie; riei Block 2 Newly shown as the implementation of the 3-1 structure of the TFT floor plan Wooden paper scale Applicable to China National Standard (CNS) A4 Zhuge (2 丨 0X297 mm) 46 4G73C3 A7 B7 Central Standard of the Ministry of Economic Affairs Printed by the Bureau's Consumer Cooperatives V. Invention Description (44) Sectional drawing. (Figure 20 (a) is a plan view, Figure 20 (b) is A-A, Sectional view of Figure 20 (a), Figure 21 is Figure 20 (a) of Implementation Aspect 3-1 B-B 'cross-sectional view> FIG. 2 ^ > An explanatory view of the manufacturing steps of a TFT in Embodiment 3-1. # 2 is a plan view of the structure of the TFT of Embodiment 3-2, and a section circle of ίούύ ((Figure 23 (a) is a plan view, Figure 23 (b), Figure 23 (a), CC, Section (Figure) Figure 24 is a sectional view taken along line D-D of Figure 23 (a) of Embodiment 3-2. ‘No. 2 # is an explanatory diagram of the manufacturing steps of the TFT in Embodiment 3-2. (< vWe) FIG. 26 is a plan view showing a configuration of a TFT according to an embodiment 3-3. Fig. 27 (a) shows a modified example of Embodiments 3-1 to 3, and is a configuration plane TFT of a TFT having a crystal growth direction control gap. Fig. 28 is a cross-sectional view showing a structure of a TFT having crystal formation and a long-direction controlled void, as shown in Figs. /; '·;? § 2_ ^ 奥' The task is to explain the crystallization when using a light beam with a light intensity gradient. The pure figure is a schematic diagram of a state in which a light beam having a light intensity gradient is moved while being irradiated. Figure 31 is for the light transmission characteristics of a filter with a light intensity gradient beam. The third part of the "map" shows the use of the relative light intensity and the relative light intensity 4 # When the beams intersect and align in a flat plane in the department | The paper size of the paper is applicable to the Chinese National Standard (CNS) Eight Shirts (210X297 mm) 锖 First · Notes on the back of the book f f Binding 47, A7 Β7 Ministry of Economy Printed by the Consumers' Cooperative of the China National Standards Bureau. V. Invention Description (45) Schematic diagram of the progress of crystallization. Fig. 33 is a schematic diagram showing a state in which a light beam having a distribution pattern shown in Fig. 32a is irradiated while being moved. Figure 34 shows the light transmission characteristics of the filter used to produce the light beam shown in Figure 32. Figure 35 shows the plane where the relative light intensity is strong and the relative light intensity is flat. Schematic diagrams of light intensity distribution patterns in other aspects of ground beams arranged in parallel. Fig. 36 is a diagram of the f-type P principle of the principle of light intensity distribution shown in Fig. 35 (a) by light interference. First, it is a diagram for explaining the crystallization speed in the case where the light beam of Fig. 35 is used. Item 31¾ is a schematic diagram illustrating a method of making a light beam from a dynamic interference pattern caused by fluctuations in the bright line portion and the dark line portion. Fig. 39 is a schematic view showing a state where an interference pattern of light is formed in a thickness direction of a thin film. Fig. 40 is a schematic diagram showing a state in which heat flows from the thin film heated by light irradiation to the surroundings. Fig. 41 is a diagram showing the relationship between the atmospheric pressure and the number of irradiations and the degree of crystallization (Raman intensity) during light irradiation. Fig. 42 is a schematic model view showing the state of crystallization using an excimer laser. Fig. 43 is a schematic diagram of an experimental device for studying the relationship between the atmospheric pressure and the degree of crystallinity during laser tempering. This paper size applies to China National Standard (CNS) grid (210 x 297 mm) order III (please read the notes on the back before filling this page) 48 4073C3 A7 ΒΊ Printed by the Central Standards Bureau of the Ministry of Economic Affairs 2. Description of the invention (4 exemptions) / '乂 第 所' / Zhu is a method for manufacturing a polysilicon thin film of the implementation aspect 5-1 Wib) / Explanatory diagram. / 'Ύ 1 No. 4¾ is a graph showing the results of Raman scattering measurement of the polysilicon films of Embodiments 5-1 and 2. Fig. 46 is an explanatory view showing a method for manufacturing a polysilicon film of Embodiment 5-2. Figure 47 shows the curve 圊 of the transmittance characteristics of glass. Fig. 48 is not a squint view of the constitution of a glass substrate with a microcrystalline film formed in Embodiment 5-3. Figures 4 and 9 are explanatory diagrams of a method for manufacturing a polysilicon sheet according to Embodiment 5-3. Fig. 50 is a graph showing TFT characteristics of each of Embodiments 5-3 to 9; Fig. 51 is a diagram illustrating another method of manufacturing the polysilicon film of Embodiments 5-3; Fig. 52 is an explanatory view showing a method for manufacturing a polysilicon film of Embodiment 5-4. Fig. 53 is a diagram illustrating a method for manufacturing a polysilicon film according to embodiments 5-5. Fig. 54 (i) is an explanatory diagram of a method for manufacturing a polysilicon film according to aspects 5 to 6 and 7. .. Figure 5-5 is a graph showing the relationship between the heating temperature and the crystal grain size of the embodiments 5-7. Figures 5 and 6 show the heating temperature and electric field effect shifts of implementation patterns 5 to 7.

I-page bound paper size is applicable to China National Standards (CNS) A4 greetings (2 丨 0'〆297 mm) 49 Printed by the Consumers' Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 ___ 407303 ___ £ 7 V. Description of Invention (47) A graph of the relationship of momentum. Fig. 57 is an explanatory diagram showing a method for manufacturing a polysilicon film according to an embodiment 5-8. Fig. 58 is an explanation of the irradiation timing of the embodiment 5-8. FIG. 59 is not an explanatory diagram of a method for manufacturing a polysilicon film of Embodiments 5-9. Figure 60 is an explanatory diagram of the laser light irradiation area of the liquid crystal display in Embodiment 6-1. Fig. 61 shows a description of a method of irradiating laser light in Embodiment 6-1. Fig. 62 is a schematic view showing a laser tempering device in Embodiment 6-2. Fig. 63 is an explanatory diagram of the irradiation area of the laser light in Embodiments 6-2 and 3. v Fig. 64 is a graph showing the dependence of the mobility on the number of laser irradiations in Embodiments 6-3. Fig. 65 is a schematic diagram of the laser tempering device in Embodiments 6-5. Fig. 66 is a plan view showing the constitution of a mask device according to an embodiment 6-5. Fig. 67 is an explanatory diagram of the laser tempering method of Embodiment 6-6. Fig. 68 is an explanatory circle of the other laser tempering method of Embodiment 6-6. Best practice sample paper scale for implementing the invention eNS} A4_ (2T0 X 2.97 male p binding (please read the precautions for face-free and then fill out this page) 50 Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 407303 at ________B7 V. Invention Explanation (48) The content of the present invention will be specifically explained according to the embodiment. (Embodiment 1-11) According to FIG. 12, it will be explained that regions with different thermal conductivity are provided on the substrate to control the temperature distribution in the semiconductor thin film. Example of Crystal Growth: As shown in Section 12 (c) (ii), a lower-layer insulating film 2 is formed across a comprehensive insulating substrate 201 on a transparent insulating substrate 201 such as a glass substrate ^ on the lower-layer insulating film 202, locally A stripe-shaped upper insulating film 203 made of a material having a lower thermal conductivity than the lower insulating film 200 is formed. Further, an amorphous silicon thin film is formed on the lower insulating film 202 and the upper insulating film 203. 204 »The amorphous silicon thin film 204 is irradiated with a linear laser light having an energy density distribution in the X 'y direction as shown in Fig. 12 (a) to form a polycrystalline silicon thin film 210» At this time, since the thermal conductivity of the upper insulating film 203 is lower than that of the lower insulating film 202 as described above, the upper insulating film 203 is formed in the amorphous silicon thin film 204 as shown in FIG. 12 (b). The portion of the upper region becomes higher than the region between the upper insulating films 203. Here, the crystallization of the amorphous silicon thin film 204 starts from the region between the upper insulating films 203, and the crystals face the upper insulating film. The region on 203 grows. Therefore, in the region between the upper insulating films 203, the collision of crystal grains easily occurs, and a large crystal grain region 210b with relatively large crystal grains is formed; on the other hand, in the upper insulating film 203 In the upper region, small crystal grain regions 210a are formed because the crystal grains growing from both sides of the upper insulating film 203 collide with each other. I— I— III— nn I nn I— n! 1 T, T (Please Please read the "Notes on the side before filling in this page." This paper size applies to Chinese national standards (CNS > Λ4 now (21〇 × 29 · 7 mm> 51 4〇73〇3 A7 B7 V. Description of the invention (49 ) Central Standards Bureau of the Ministry of Economic Affairs-Industrial and Consumer Cooperatives The degree of crystallization of the polycrystalline silicon film 21 〇 formed as described above and the polycrystalline silicon film obtained by polycrystallization according to a conventional method is compared with the peak intensity of Raman spectroscopy. The results are shown in Fig. 13 Here, in the polycrystalline silicon thin film 21 of this embodiment, the lower insulating film 202 is a silicon nitride film (thermal conductivity: 019 W / cm ° C) with a thickness of 2000 nm, and the upper insulating film 2 For 〇3, a silicon oxide film (thermal conductivity: 014 w / cm c) with a thickness of 30 nm and a width of about 5 μm ′ and an interval of 20 # m is used. On the other hand, in the conventional method, a silicon oxide film with an i-layer thickness of 2000 nm is used as the insulating film. In addition, both the amorphous silicon thin films have a film thickness of 85 nm. It should be noted that the measurement positions of the Raman peak intensities of both are at the center of the irradiation area in the X direction in FIG. 12. It can be seen from FIG. 13 that, compared with the overall crystallinity in the conventional method, in the case of the present invention, although the crystallinity of the portion on the upper insulating film 203 indicated by A, B, and c is low, The Raman peak intensity of a portion sandwiched between the upper insulating film 203 and the lower insulating film 202 became larger, and it was confirmed that the degree of crystallization was greatly improved. In addition, the interval of the stripe-shaped pattern of the upper insulating film 203 changes the optimum value according to the thermal conductivity and the energy density of irradiation of the lower insulating film 202 and the upper insulating film 203. In the above example, 5 to 5 〇 # m, preferably 10 to 30/2 m, is expected to be a range in which large crystals can be obtained stably. In addition, in the above description, the y direction in FIG. 12 shows an example of maintaining the temperature distribution on the surface of the Shixi film, but the laser beam is still and ... It is also possible to maintain the temperature distribution in the χ direction. I 1 —-I- I -1 IID. 210X297 Gongchu) 52 V, 407303

[Explanation of the Invention] (50 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, and the laser beam is swept into the x direction to capture 3, and it is appropriate to consider the effect on the temperature distribution due to the sequential movement of the irradiation area. It is also good to use the difference in thermal conductivity as described above to simultaneously adjust the temperature distribution of the laser beam by making the energy density of the laser beam different in each region to adjust the temperature distribution. Also, in the above example, The thermal conductivity of the upper insulating film 203 is lower than that of the lower insulating film 202, so that the crystal grain size of the area where the upper insulating film 203 does not exist is large. On the contrary, the thermal conductivity of the upper insulating film is larger than that of the lower insulating film. It is also possible to make the crystal grain size larger in the region where the upper insulating layer is formed. However, the former is generally easy to use because the area of the region where the thermal conductivity is high (the surface temperature of the Shixi film is low) is large, so it is easy. The temperature gradient in the temperature distribution on the surface of Shi Xi is made larger. Moreover, the up-and-down relationship between the magnitude of the thermal conductivity and the laminate is not limited to the above case, but it may be the opposite, and it is better to form a predetermined temperature distribution. When the insulating film has a two-layer structure as described above, if the etching selection ratio (ratio of the etching rate) of the upper insulating film and the lower insulating film is set to be large, the upper insulating film can be easily formed into a desired shape ( Thickness,) so that an insulating film can be formed with a uniform thickness across the entire large area. As a result, a polycrystalline silicon thin film having a uniform particle diameter can be easily obtained across the entire surface of the substrate. In areas with different thermal conductivity, for example, the thickness of the silicon film can be changed by etching. In this case, although the precision of the remaining processing must be set higher, it is not necessary to form it as described above. 2 Layer of insulating film, so that the manufacturing steps can be simplified. In addition, the thermal conductivity will be changed as described above, and this paper size applies the Chinese National Standard (CNS) A4 specification (2 丨 0 > < 2.97 mm) Please read the note first

I Order 53 Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ^ 07303 A7 ____ B7____ V. Description of the Invention (5l) Instead, the temperature distribution can be generated by forming regions with different heat capacities, which can also improve crystallinity. (Embodiment Aspects 1-2) An example of a polycrystalline silicon thin film transistor formed using the semiconductor thin film formed as described above will be described. Fig. 14 (a) is a plan view of a polycrystalline silicon thin film transistor, and Fig. 14 (A) is a cross section 圊 of Fig. 14 (a). In Figure 14, 201 is a transparent insulating substrate, 202 is a lower insulating film, 203 is an upper insulating film, 205 is a gate insulating film, 206 is a source electrode film, and 207 is a drain electrode film. ., 208 is the gate electrode film, and 20 lb is the large crystal grain area of the polycrystalline silicon film 201. That is, the polycrystalline silicon thin film transistor system, as explained in the foregoing embodiment, i-i, only the large crystal grains in the region sandwiched by the upper insulating film 203 in the polycrystalline silicon thin film 2i0 The region 21 (0) is selectively retained and used by etching, and is formed in such a manner that the source-drain direction is parallel to the stripe pattern direction of the upper insulating film 203. Furthermore, the method of forming the closed-electrode insulating film 205, the source electrode film 206, the drain electrode film 207, and the gate electrode film 208 can be applied to a pattern formation method based on the same thin-film deposition as the conventional thin-film transistor. . The thus obtained polycrystalline silicon thin film transistor has an electric field effect mobility of about 18 ° C ~ 2 ° C. Compared to a transistor made by a method known by the method, the electric field effect mobility is 70cmVV.sec, which can make TFT characteristics large. Increase significantly. In addition, the paper size of the direction of the upper insulating film 203 and the source-non-polar direction is applicable to the Chinese National Standard (CNS) ~~ il ^ i · nn —Bn a ^ l ^ i BI ^ HI «^^^ 1 Bl ^^ i mV m I 'W--i (Please read the precautions on the back before filling out this page) 54 Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperation, Du Yin Preparation 303 .at B7 V. Description of the Invention (52) The relationship is not limited to those that are consistent as described above, and the length of the crystal grains formed corresponding to the interval of the upper insulating film 203 may be the source-drain direction. (Embodiment Modes 1 to 3) An example of forming a polycrystalline silicon thin film electrocrystal having a larger size than the above Embodiments 1 to 2 will be described. As shown in Fig. 15, the polycrystalline silicon thin film transistor is different from the above embodiment in that it uses two large crystal grain regions 21b formed between three upper insulating films 203. In addition, the lower insulating film 200 is a silicon oxynitride film having a thickness of about 200 nm formed by plasma CVD, and the upper * insulating film 203 is a silicon oxide film having a thickness of about 40 nm. In addition, the large crystal grain region 210b is formed by forming an amorphous silicon thin film 204 with a thickness of 85 nm on the upper-layer insulating film 203, and performing the same excimer as in Embodiment 1-1. The formation of polycrystalline silicon thin film by laser light. That is, if the interval of the upper insulating film 203 is made wide in order to make the size of the transistor large, it is difficult to make the formation of the transistor and the transistor on the surface of the silicon film during the polycrystallization process. The temperature gradient between the surrounding areas becomes sufficiently large, and as a result, there is a possibility that the crystal grain size of the stone in the transistor formation area cannot be made sufficiently large. Here, the upper-layer insulating film 203 is not set to have a wide winter interval as described above, and the temperature gradient is actively made large to form a plurality of large crystal grain regions 210b with a good crystalline state. By combining these, a thin-film transistor having a large size and good characteristics can be formed. Specifically, it can be obtained, for example, electric field efficiency 1 paper bearing standards applicable to Chinese national standards (cns M4 Lin (2! Ox297 mm) '-------------- 1 », --- --- Order * * (Please read the precautions on the back before filling out this page) 55 407303 A7 57 Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (53) Should be about 200 cm2 / V · Sec thin thin crystal with very good characteristics. As mentioned above, according to the method for manufacturing a polycrystalline silicon thin film transistor of the present invention, only the area where the transistor is made can be made into large crystal grains and formed in a transparent state. The insulating film on the insulating substrate is not limited to silicon nitride, oxynitride, and oxidized oxide, and it is not limited to a special material if it uses different combinations of thermal conductivity and can be selectively etched. Sample 2— 1) Explain a thin film transistor using a semiconductor element with a large crystal grain as the implementation aspect 2 — 丨 Figure 16 is a schematic diagram of a thin film transistor; Figure 16 (a) shows Plan view, Figure 16 (b) is the AA 'section in Figure 16 (a). Among them, 301 is an insulating substrate, and there is an undercoat layer 302 on the insulating substrate, and further, a semiconductor layer 303 formed by crystallizing an amorphous semiconductor film composed of magic is provided above. As shown in FIG. 16 (a), on this semiconductor layer 303, a plurality of protrusions 303a extending to the outside in the same plane as the semiconductor layer 303 on the opposite side of the pair of semiconductor layers 303 are empty. A predetermined interval is formed and formed. Furthermore, the protrusion 303a is formed into a substantially rectangular shape, and the length (length protruding from the semiconductor 303) and width (length perpendicular to the protruding length) are set to 1 to m. Further In order to cover the semiconductor layer 303 above, a first insulating layer 304 is provided above the semiconductor layer 303; here, the pre-position on the insulating layer 304 is set as the gate of the first electrode Electrode 3 〇5. A second insulating layer 306 is provided to cover the gate electrode 305, and the second insulating layer 306 is applied to the second insulating layer 306. This paper standard applies the Chinese National Standard (CNS) to the specifications (2 丨 0 > < 2? 7). Mm) (Please read the notes on the back before filling (This page) Assembly · -Order 56 407303 _ A7 --- -----: _87___ V. The predetermined position on the description of the invention (54) is set as the source electrode 307s and the drain electrode 307 (1 of A pair of second electrodes electrically contacting the semiconductor layer 303. The consumer cooperation agreement of the Central Bureau of Standards of the Ministry of Economic Affairs is printed here. Although the width of the protrusions 303a is not limited to i #m, but in order to further integrate the crystal particle size, Each of the protrusions 303a generates a crystal nucleus, which is desirably in the range of the thickness of the semiconductor layer 303 (for example, 0.05em) to 3 to m. The technical reason for adopting the above numerical range is that 'when the width of the protruding portion 303a is smaller than the film thickness, the crystal nuclei generated in the protruding portion 303a will be affected by surface tension and will be pulled into the semiconductor layer 303. This causes a problem that the crystal nuclei cannot survive; on the other hand, when the width of the protruding portion 303a is greater than 3 / zm, there may be a risk of generating more than three knots in the protruding portion 303a. The shape of the 'protrusions 303 & is not limited to a rectangular shape, and other shapes such as a semicircular shape and a triangular shape may be used. The protruding portion 303a is not limited to be formed over the entire length across the opposite side of the semiconductor layer 303. For example, it may be formed only at a portion corresponding to the gate electrode 305. If necessary, it is formed by giving characteristics to the element The affected channel part is also available. Alternatively, it may be formed at a position near the middle between the source and the drain. In addition, although the interval between the adjacent protrusions 303a can be appropriately selected depending on conditions such as a desired particle diameter, in this embodiment, the interval between the protrusions 303a is set so that the protrusions are provided. The length (w) of the side of 303a and the side crossing at right angles to each other are approximately equal. Moreover, although this setting is desirable because it is easy to form large crystal grains with approximately equal lengths of crystal grains in all directions; however, when it is not set in this way, it is also possible to obtain regular formation of crystals from the peripheral part to grow into The effect of large crystal grains. With the formation of the protruding portion 303a as described above, the Chinese paper standard (CNS) μ specification (21〇X_297 mm) is applied to the semiconductor layer 3 of this paper. 57 ^ 07303 .A7 " ——_ B7 V. Description of the invention (55) After the laser beam is irradiated to heat it, since the portion of the projection portion 303a is cooled early, it is easy to cover the crystal nucleus. At the same time, the crystal starts from the crystal nucleus to the central portion of the semiconductor layer 303. growing up. At this time, because the protrusions adjacent to her and the protrusions 303 grown on the opposite side do not interfere with each other, they can easily grow to the central portion of the semiconductor layer 303. Nearby, relatively large crystal grains are formed. Therefore, the electric field effect mobility is improved, and the TFT characteristics can be easily improved. Next, a method for manufacturing the thin film transistor as described above will be described with reference to FIG. Fig. 18 is a process drawing of a method for manufacturing a thin film transistor. First, as shown in FIG. 18 (a), an undercoat layer 302 is formed on an insulating substrate 301, and silicon is adhered to the undercoat layer to form an amorphous (non-single-crystal) semiconductor layer 303. . Next, a photoresist (not shown) is selected to form a predetermined shape on the semiconductor layer 303. This photoresist system is used as a photomask. As shown in the aforementioned 16 (a) (ii), After the lengths of the opposite sides of the amorphous semiconductor layer 303 extend over the shape of the protrusions 303 extending in the same plane, the photoresist is removed. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs m I -----!-. 1 -I n--IK \ li ^-III 1 III -I--T-°-· «(Please read first Read the notes on the back side and fill in this page again.) Then, as shown in Figure 18 (b), the above-mentioned amorphous semiconductor layer 303 is irradiated with excimer laser light as an energy beam to crystallize it. It is a modified layer of polysilicon. Here, after the laser light is radiated, the heat accumulated in the protruding portion 303.a accumulated around the periphery diffuses toward the outer side 3 in a plane parallel to the semiconductor layer 303, and accumulates in The heat in the central part can escape to the uncooled peripheral side, so the peripheral part including the protruding part 303a has a cooling degree that is relatively earlier than the central part. The Chinese National Standard (CNS) A4 is used. (210X297 mm) ----- 58 407303 .A7 B7 V. Description of the invention (56) Consumption cooperation printing by employees of the Central Standards Bureau of the Ministry of Economic Affairs. Therefore, the crystal nucleus in the protrusion 303a occurs earlier than the crystal nucleus in the central portion, and because the crystal nucleus in the central portion occurs or the crystal grows, the crystal nucleus occurring in this periphery has already proceeded toward the central portion. The crystal grows, so the crystal grain size and crystal direction become controllable. In this way, it is possible to easily prevent crystals from interfering with each other during crystal growth, and to obtain a sufficient crystal grain size. Continuing, as shown in FIG. 18 (C), a first insulating layer 304 is formed on the semiconductor layer 303 and the undercoat layer 302, and then a selective gate is formed on the first insulating layer 304 as a gate for the first electrode. Electrode electrode 305 »After that, as shown in section 18 (d) (ii), the gate electrode 305 is used as a photomask. Because the semiconductor layer 303 is ion-implanted or ion-doped without mass separation, the semiconductor layer 303 is used. Method, adding impurities that constitute the donor or acceptor to form the source region 303s and the drain region 303d. Finally, as shown in FIG. 18 (e), after forming the second insulating layer 306, the contact hole is opened, and the source electrode 307s and the drain electrode 303d are selected to form a thin film transistor. In the above example, although Si is used as the semiconductor layer 303, other materials made of a compound of Si and Ge may be used. Also, other combinations of Group IV of SiC, such as the combination of Group Gua and Group V of GaAs, and the combination of Group π and Group VI of CdSe may be used. In addition, although a polycrystalline silicon thin film transistor is described as an example ', it is not limited to this, and it can be applied to various other semiconductor devices. Further, when polycrystalline of the amorphous semiconductor layer 303, although an excimer laser is used as the energy beam, other energy light can also be used. Please read the note. Page-bound paper size Standard for Financial Services (CNS) (Public Education 97) 59 407303 t A7 B7 Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (57) Bundles such as Ar Laser, YAG Laser light such as laser, ion beam, electron beam, etc. (Embodiment 2-2) The semiconductor device of Embodiment 2-2 is described with an example of a thin-film transistor of the inversely staggered type. 》 Figure 17 is a schematic view of a thin-film transistor; Figure 17 (sentence diagram is a plan view; Figure 17 (b) is A-A, a sectional view of Figure 17 (a). This thin-film transistor and In comparison with the foregoing implementation aspects 2 to 丨, there are mainly differences in the inverse staggered structure, and the protrusions 303a are formed on the entire circumference of the semiconductor layer 303 across the entire circumference. In FIG. 17, 301 is insulation. An insulating substrate, an undercoat layer 302 is provided above the insulating substrate 3101, and a gate electrode serving as a first electrode is disposed on the undercoat layer 302. Electrode 305. Further, a first insulating layer 304 covering the gate electrode 305 is provided, and a semiconductor layer 303 is provided on the first insulating layer 304. Here, the semiconductor layer is as shown in FIG. 17 (a) A plurality of protrusions 303 extending outward in the same plane as the semiconductor layer 303 are formed on the entire circumference of the semiconductor 303 at predetermined intervals. The shape of the protrusions 303a and the like are implemented. Aspect 2-1 is the same. Here, in the same drawing, although the interval between the protrusions 303a is drawn narrow for convenience, it is set the same as the width of the semiconductor layer 303 of Embodiment 2_1. The degree is appropriate. However, as shown in the same figure, one side is formed tightly, and the other side is formed to form a long '.' It is also possible to form crystal grains that are larger than those that regularly make the crystal grower from the surrounding part. On the semiconductor layer 303, one of the pair of source electrodes electrically contacting the semiconductor layer 303 is formed as the second electrode. The paper size is suitable for the country ’s national standard (CNS) M standard (2-wide). Loading — .. ^ Order (Please read the note on the back first Please fill in this page again.) 60 .A7 B7 V. Description of the invention (58) 3007s and drain electrode 307d. Next, the method of manufacturing the thin film transistor as described above will be described with reference to FIG. 19. 19 圊 shows an engineering drawing of a method for manufacturing a thin film transistor. First, as shown in 19 (a) 圊, an undercoat layer 302 is formed on an insulating substrate 301, and an undercoat layer 302 is selectively formed as a first coat layer. 1 electrode of the gate electrode 305. Next, as shown in FIG. 19 (b), a first insulating layer 304 'is formed on the gate electrode 305 and the undercoat layer 302. 1 on the insulating layer 304 to form an amorphous (non-single-crystal) semiconductor layer. Secondly, • Selecting a photoresist (not shown) into a predetermined shape on the semiconductor layer 303; using the photoresist system as a photomask ', as shown in the aforementioned n (a) diagram, After traversing the entire length of the opposite sides of the crystalline semiconductor layer 303 and extending the shape of the protrusions 303 extending in the same plane, the photoresist is removed. The user of the Central Standards Bureau ’s Consumer Cooperative ’s print installer, as shown in Figure 19 (c), irradiates the above-mentioned amorphous semiconductor layer 303 with excimer laser light as an energy beam to crystallize it. As a modified layer of polysilicon. Here, by forming the protrusions 303a as described above, it is possible to easily obtain a sufficient crystal grain size as described in the foregoing embodiment. Thereafter, as shown in FIG. 19 (d), a photoresist 308, which is a doped photomask, is selected on the semiconductor layer 303 to form a predetermined shape. The photoresist 308 is used as light. Cover, and the semiconductor layer 3 0 3 by ion implantation or ion doping method that does not allow mass separation will constitute the donor or acceptor of this paper standard ITS 81S home code (CNS) (210X ^ 97 mm ) 61 407303 A7 B7 Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (59) Impurities are added to form the source region 303s and the drain region 303d ', and then the photoresist 308 is removed. Furthermore, in this embodiment 2-2, it is the same as that described in the above embodiment 2-1, and it can be applied to various changes. In addition, 'is not limited to the inversely staggered thin-film transistor as described above, and the same effect can be obtained if the same staggered-type thin-film transistor is formed as in the aforementioned embodiment 2-1. In addition, as described above, in the case where the protruding portion 303a is formed on the entire circumference across the semiconductor layer 303, it may be replaced with the same as in the embodiment 2-1, and only formed on the opposite side. situation. (Exemplary aspect 3-1) • Explain based on Figure 20 to Figure 22. At the beginning, the structure of a thin film transistor (TFT: Thin Film Transis-tor) related to this embodiment will be described. Fig. 20 is a schematic diagram of the tFT4i0 of the staggered type, Fig. 20 (a) is a plan view of the TFT410, and Fig. 20 (b) is. Fig. 21 is a cross-sectional view taken along the arrow B-B 'in Fig. 20 (a). As shown in FIG. 20, the TFT 410 is provided with an undercoat layer 402, a p-Si film 403, a first insulating film 404, a second insulating film 406, and a gate electrode 405 and a source electrode 407s on an insulating substrate 401. And three electrodes including a drain electrode 407d. The above-mentioned insulating substrate 401 is, for example, a glass substrate having a strain point of 593 ° C and a thickness of 1.1 mm, and the undercoat layer 40.? Is, for example, a thin film composed of Si02A. In addition, the above-mentioned p-Si film 403 is a polycrystalline semiconductor layer body portion β formed on the undercoat layer 402 to be suitable for the method of the present invention. _ Si film 403 is based on channel region 403a, source region 403b, and drain region ---------------- order (please read the precautions on the back before writing this page) This paper size applies the Chinese National Standard (CfJS) A4 Zhuge (210X297 mm) 62 407303 '-A7 _ ______B7___ V. Description of the invention (of) the domain 403c; the source region 403b and the drain region 403c are located Both sides of the passage area 403a. The source region 403b and the drain region 403c are formed by doping impurities such as phosphorus or boron. The p-Si flag 403 is made of, for example, silicon (Si), or a compound of silicon and germanium (Ge) as a material *, and the thickness of the p_Si film 403 is preferably 200A-1500 A, and more preferably 300A ~ If the 1000A Fanyuan β is made of wood and 200 Α, there will be problems in the uniformity of film thickness; if it exceeds .1500 A, there will be a current flowing between the source and the drain due to light irradiation. The so-called light transmission problem • For this reason, if the thickness is within the range of 300 A to 1000 A, both the uniformity of the film thickness and the light transmission can be taken into account at the same time. In addition, the 20th (a The width in the X direction of the channel region 403a of the figure is, for example, about 12 m, and the width in the Y direction of the arrow of the p-Si film 403 is, for example, 14 m. Here, in the above-mentioned channel region 403a, As shown in FIGS. 20 (a) and 21, a plurality of groove-shaped crystal growth direction control voids 411 are formed in a direction parallel to the source region 403b and the drain region 403c. This crystal hip growth direction control empty team 411 is semi-circular at both ends in the long direction and rectangular in the central portion; the groove width in the central portion (the groove width in the direction where the longitudinal directions intersect at right angles) is approximately but, There are no special restrictions on the shape of the crystal growth 411. Other restrictions • For example, a rectangular shape can be formed from the pole region 403b to the drain region 403c. The crystal grains along the channel region 403a The direction of the source region 403b or the drain region 403c forms a slenderly expanded shape; and a large number of this paper ft scales use the Chinese National Standard (CNS) A4 specification (2 丨 0X297 mm) 63

Printed by the Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, L. A7 • · ____B7___ V. Description of the invention (61) The seed crystal grains constitute a polycrystalline semiconductive vessel related to the channel area 403a. The channel region of such a polycrystalline structure has a small intergranular density in the direction connecting the source region 403b and the drain region 403c, so that charge carriers can move at high speed. The first insulating film 404 is An insulating film made of, for example, 8102 is formed over the p-Si flag 403 and the undercoat layer 402. The gate electrode 405 is made of, for example, aluminum (A1) or the like, and is provided above the first insulating film 404 and at a position corresponding to the channel region 403 a of the p-Si junction 403. The second insulating film 406 is made of, for example, SiO2, and is laminated on the first insulating film 404 and the gate electrode 405. In the first insulating film 404 and the second insulating film 406, contact holes 408 and 408 are formed, respectively, to the p-Si film 403 and the drain region 403b or the drain region 403c. The swimming electrode 407s and the drain electrode 407d are: For example, a drill is formed between the contact holes 408 and 408, and is formed to be in contact with the above-mentioned electrode region 403b or the drain region 403c. The wiring pattern is formed by enclosing a portion other than the cross section shown in the figure into a predetermined shape. Next, the method of manufacturing the TFT410 related to this embodiment mode will be described. Fig. 22 shows a breakdown of the manufacturing process of the TFT410. Chess figure. f First, as shown in FIG. 22 (a), an undercoat layer 402 is formed on an insulating substrate by a normal pressure CVD method. The thickness of the undercoat layer 402 is made, for example, 3000 Α β is formed on the undercoat layer 402, and a Si layer is formed by, for example, plasma CVD. A photoresist (not shown) is selectively formed on the Si layer. The shape ° Please note first

I-page bound paper is again applicable to China's National Standards (CNS) Α4 Zhuge (210X29.7 mm) 64 407303 .A7 B7 V. Description of Invention (62) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs' After the photoresist is used as a photomask, the photoresist is patterned into a predetermined shape by etching, and then the photoresist is removed. In this way, a-to-film 413 can be formed as a non-single-crystal semiconductor layer having the aforementioned crystal growth direction control gap 411 .... Here, the film thickness of the a-Si film 413 is, for example, 650A. When the crystal growth direction control gap 411 is finely formed, exposure using a high-precision photoresist and interference fringes that can interfere with light may be performed. After the formation of the a-Si film 413, as shown in FIG. 22 (b), the entire a-Si film .413 was exposed to light once for the entire excimer laser exposure, and the a-Si film 4H After heating and melting, let it cool. Thus, an a-Si film 4Π is formed as a crystalline semiconductor film. Here, if the crystallization method using an excimer laser is used, the temperature of the body portion of the a_phantom film 4 can be sufficiently increased because the absorption coefficient of the 3_y film 413 is large in the ultraviolet region; another On the other hand, the temperature is kept low because a part excluding a—the crystal growth direction controlling void 411 ···· does not absorb laser light. Therefore, in the cooling process, first, the temperature in the vicinity of the gap 411 (and the peripheral portion of the a- ^ film 413) of the crystal growth direction control temperature reaches the crystallization start temperature, and the first crystal nuclei are formed there. Then, although crystal growth was performed with the crystal nucleus as the center, as already stated, the crystal "long direction is limited by the crystal growth direction control gap 4U ... which is arranged in parallel, and is induced to connect the source region 403b and the source region 403b and In the direction of the drain region 403c. This result is a crystal with a small intercrystalline density formed in the direction connecting the source region 4 03b and the drain region 4 03 c. A_ with the film "〗 〇 This paper is suitable for financial @ g) A4im (210X297 / U -) ~ Please. First. Read back .. Note

I Luxury binding 65 407303 .A7 ——_____ B7__ 5. Description of the invention (63) The irradiation conditions of the aforementioned energy beams are, for example, XeCl (wavelength 308 nm), when the excimer laser is used, the cross-sectional shape of the beam is, for example, using A square 50 ils laser light pulse on one side of a few thousandths of a square inch. The energy density of the laser light (irradiation energy per unit area: mj / crn2) is appropriately set so that it can be heated to an appropriate temperature to make a_ "film 413 is suitable for crystallizing. Or," except for the above excimer laser to remove XeCl In addition, excimer lasers such as ArF and XeF can also be used. Regarding the growth distance of the multiple crystals to control the distance between the gaps 411, the film thickness and irradiation conditions of the a_si film can be considered, plus the desired charge carriers. "Movement speed" is appropriately set; in this embodiment, it is about 2 kernels m. In addition, the width of the control gap 411 regarding the crystal growth direction may also correspond to the thickness of the a_ ^ film and the type of energy beam irradiated and The intensity and the like are appropriately set; in this embodiment, it is about 1 / zm. Printed by the central standard of the Ministry of Economic Affairs, the Shellfish Consumer Cooperative, m ^ iu ^ m nn · t tm— Ϊ— i wear ·, -a • * (Please read the precautions for t · face before writing this page) After the above crystallization, as shown in Fig. 22 (c), the i-th insulation is formed on the p-si film 403 by atmospheric pressure CVD method. The film 4 was formed into a film having a thickness of 1000 A. Further to the 1 ' On the margin medium 404, for example, a Tibetan key is implemented to make the film thickness 20000A 'and then use the inscription etch solution to apply a wet demineralization for about 1 minute' to round it into a predetermined shape to form a closed The electrode 4 〇5 and the wiring pattern. Next, as shown in Figure 22 (d), the gate electrode is used as a photomask 'on the P-Si film 403 by ion implantation or mass separation is not possible. The ion doping method implants the impurity ions constituting the donor or acceptor, specifically the scale or the impurity ions of the # 'implant. Thus, the above-mentioned national standards (CNS in p- ^ film 403) ) A4C; (^ 7 210X297 millimeter factory ~--66-407303, A7 --------------- B7 V. Description of the invention (64) '^ — Form a pass region 4G3a, source region 彳 ㈣ And the drain region 403c. Further, as shown in FIG. 22 (e), on the gate electrode 405, a second insulating film made of, for example, SA is damaged, and is formed by the constant red vd method. The film has a film thickness of 5000 A, and then 'here! Insulating film 4 04 and the second insulating film can be identified by accessing p—the contact hole 4 in the source region of the film or the non-polar region 403c. 8, 4〇8. Next, the Ming film was extinct into 3GGGA and 3GGGA film thicknesses, and patterned into a predetermined shape by, for example, a doping method using a BC13 / C12 series gas. By this, the source The electrode electrode $, the drain electrode 407d ', and other wiring patterns are formed. According to the embodiment 3 described above, the source region 403b and the non-electrode region 4 can be connected. Form long lyaine crystal grains in the direction of 3c, and thereby obtain a staggered TF D with excellent electric field effect mobility. In this embodiment, since neither the insulating substrate 401 nor the 卩-^ film 403 uses high-priced materials, it is possible to provide a TFI with excellent electric field effect mobility at a low price (Embodiment 3 —2) Printed by DuPont Consumer Cooperation, Central Standards Bureau, Ministry of Economic Affairs I --------- ^ ---: --- ~ ir (Please read the notes on the back before filling this page) About this Embodiments 3 to 2 of the invention will be described with reference to FIGS. 23 to 25. Furthermore, among the constituent elements of the thin film transistor of the implementation form 3_2, the constituent elements having the same functions as those of the aforementioned implementation form 3— are given the same names and symbols, and detailed descriptions thereof are omitted. Fig. 23 is a schematic diagram showing the inversely staggered TFT420 of this embodiment. Fig. 23 is a plan view of the above-mentioned TFT420, and Fig. 23 (b) is a view of Fig. 23 (a). Section A—A 'arrow direction sectional view. Fig. 24 is a sectional view in the direction of arrows B-B 'in Fig. 23 (a). As shown in Figure 23, the paper size is applicable to the Chinese family standard (CNS) A4 Zhuge (210X29.7 mm) 67 printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 _ B7_ V. Description of the invention (65) The TFT 420 is provided with an undercoat layer 402, a p-Si film 403, a first insulating film 404, a gate electrode 405, a source electrode 407s, and a drain electrode 407d on the insulating substrate 401. Constructor. The gate electrode 405 is formed on the undercoat layer 402 on the insulating substrate 401. The first insulating film 404 is formed on the undercoat layer 402 and the gate electrode 405. Further, p-Si 臈 403 is formed on the first insulating film 404. Here, the channel region 403a in the p-Si film 403 is the same as that of the aforementioned embodiment 3-1. A plurality of groove-shaped crystal growth direction control voids 411 are formed in the polar region 403b in the direction of the drain region 403c (see FIG. 23 (a) and FIG. 24). The source electrode 407s and the non-electrode 407d are formed in contact with the source region 403b or the drain region 403c on the p-Si film 403. In addition, the above-mentioned gate electrode 405, source electrode 407s, and non-electrode 407d are patterned into a predetermined shape in a portion other than the cross section shown in the figure to form a wiring pattern. A manufacturing method of the TFT 420 related to this embodiment will be described with reference to FIG. 25. Fig. 25 is a sectional view 圊 of the manufacturing process of the TFT420. First, an undercoat layer 402 is formed on the insulating substrate 401 in the same manner as in the aforementioned embodiment 3-1. Further, the undercoat layer 402 is patterned so as to have a predetermined shape to form a gate electrode 405 and a wiring pattern (see FIG. 5 (a)). Next, as shown in Fig. 25 (b), a first insulating film 404 is formed on the gate electrode 405 and the undercoat layer 402. Further, the same operation as in the aforementioned embodiment 3-1 is performed on the first insulating film 404. For example, the electropolymer CVD method 1 ^ 1 ^ 1 n ^ ii ^ i ^ — ^ — ^^ 1 ί I mV m ^ i mV —But .¾ ·-" 0 (Please read the precautions on the back before filling in this page) This paper size applies to China National Standard (CNS) A4 specification (210X29? public variable) 68 407303 at B7 V. Description of the invention (66) forming a Si layer. After the photoresist is selectively formed into a predetermined shape on the Si layer, the photoresist is used as a photomask and exposed, and then patterned into a predetermined shape by engraving. After that, the photoresist was removed. As a result, an a-Si film 413 having a crystal growth direction control gap 411 is formed as shown in the 25th (c) circle, and an excimer laser is irradiated on the entire surface of the a-Si film 413 so that a The -Si film 413 is crystallized to form a p-si film 403. Here, since the channel growth region 403a in the channel region 403 in the p-Si film 403 is provided with a crystal growth direction control void 411 ..., as in the above-mentioned embodiment 3_1, the formed body particles follow The direction of the source region 403b or the non-electrode region 403c is a shape that expands thinly and long. As a result, the crystal intergranularity in the linear direction connecting the junction source region 403b and the drain region 403c is substantially reduced, so that the mobility of the electric field effect can be improved. After that, as shown in FIG. 25 (d), a photoresist is coated on the p_si 臈 403, and then patterned into a predetermined shape by exposure and development to form a photoresist formed as an ion shielding film. Cover 414. The photoresist mask 414 is not particularly limited as long as it shields impurities of impurities, and various known products can be used. Specifically, it can be exemplified by Baoji Photoresistor (seeking '7 b eve ，, trade name: OFPR-5000, made by Tokyo Yinghua Co., Ltd.) and the like. Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs In addition, it is not limited to products with photoresist-like photosensitivity. It can also be obtained by patterning with lithography technology. The photoresist mask 414 is used as a photomask, and impurities such as phosphorus or boron are implanted into the p_si film 403 by ion doping, for example. Thereby, a channel region 403a and a source region 403b and a drain region 403c on both sides of the channel region 403a are formed on the p-Si film 403. Thereafter, the above-mentioned photoresistance light paper size was applied to the Chinese National Fresh (CNS) A4 specification (69 printed by the Central Consumers Bureau of the Ministry of Economic Affairs, Consumer Cooperative) 407303 at — B7 V. Description of the invention (67) The cover 414 was peeled, further as As shown in FIG. 25 (e), the source electrode 407s and the drain electrode 407d are selectively formed to obtain the inversely staggered TFT 420 related to the present embodiment 3_2. In the inversely staggered TFT, the same effect as in the above-mentioned implementation mode 3-1 is obtained, and the effect of improving the mobility of the electric field effect is obtained. (Implementation mode 3-1) This implementation mode 3-1 is characterized in that Actually implement the crystal growth direction in the 3 to 1 and 3 to 2 to control the void instead, and set an early crystallization region where the crystallization system starts at a temperature that is two degrees higher than other regions. The implementation will be described below according to FIG. 26. The crystalline thin film semiconductor electric crystal related to aspect 3 to 3. Furthermore, it is the same as the foregoing embodiment 3 except that an early crystallization region is set in place of the crystal growth direction to control the two gaps; [same, so in In the following description, The descriptions other than the period of crystallization are omitted. In addition, the constituent elements having the same functions as those of the thin film transistor of the aforementioned embodiment 3— 丨 or embodiment 3 2 are assigned the same symbol β as shown in FIG. 26. It is shown that in the p_Si film 403, a band-shaped early crystallization region formed by implanting impurity ions other than phosphorus or boron is formed in the channel region from the source region to the drain region. The TFT 430 can be manufactured in the following manner. First, in the same manner as in the foregoing Embodiment 3, the undercoat layer 402 is formed on the insulating substrate 401 by a normal pressure CVD method. Next, the undercoat layer 402 is formed. For example, a Si layer is formed by a plasma CVD method, and a photoresist is selectively formed into a predetermined shape on the Si layer. After the photoresist is used as a photomask and exposed, it is patterned into a predetermined shape by etching to form a — Si This paper size is applicable to Chinese National Standard (CNS) A4 (210X297 mm) (please read the precautions on the back before filling out this page). &Quot;, π 70 Printed by the Consumers Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Knot 40 / 303 A7 ____B7 Five 'Description of the Invention (68) Film 413. Next, in the channel region 403a of the a-Si film 413, from the source region 403b to the drain region 403c, a band other than phosphorous or boron is implanted. Substances can be impure ions that can be crystallized and started at an initial temperature to form an early crystallized region 421. Furthermore, a full irradiation of a Si film 413 is formed as an energy beam in the early crystallized region 42 The excimer laser is about 50 Å, and then it is allowed to cool to crystallize the a_Si film 413. Here, when the entire surface of the a_Si film 413 is irradiated with an energy beam, the temperature of the a_Si film 413 increases. Although the temperature of the & — & film 413 gradually decreases by the subsequent cooling, the temperature decreases. In the process, it still leads the other regions and regions and produces the initial crystal nucleus in the early crystal flower region 421. The reason is that the early crystallization region 421 becomes crystallization at a higher temperature than other regions due to the implantation of impurities. Thereafter, crystal growth is performed with the crystal nucleus generated in the early crystallization region 421 as a center. According to this, a polysilicon film composed of large crystal grains can be formed. In addition, the steps after crystallization are the same as in the aforementioned embodiment 3. There are no particular restrictions on the method of implanting the impurities described above that can raise the crystallization start temperature into the a-Si film, and various previously known methods can be used. X 'This embodiment shows an example of a staggered type, but the same effect can be obtained with an inverse staggered type. In addition, the early crystallization region is not limited to the implantation of impurity ions as described above, and a part of the crystallization region (pre-crystallization) is formed in advance, and the melting point (~ crystallization temperature) corresponding to the degree of crystallization is used. Differences are also possible. In addition, in order to make this pre-crystallized fine topographic wood paper standard applicable to China National Standard (CNS) M specification (21〇χ297 公 康 1 ^ 1.1. 1-I 1-- I-In--^ ϋ I--II- -I-(Please read the precautions on the reverse side before filling out this page) 71 Printed by Shelley Consumer Cooperative, Central Standards Bureau, Ministry of Economic Affairs, A7 ________B7 V. Description of the invention (69) Into, for example, the use of interference bands that can interfere with light, etc. (Other matters concerning implementation aspect 3-1 to 3-3) In the foregoing implementation aspect 3-1 and implementation aspect 2-3, although it is in the a_si film 413. Along the source region and drain_ A long groove-shaped growth direction control gap 411 is provided in the direction of the polar region. The present invention is not limited to this aspect. For example, as shown in FIG. 27, the source region and the drain region are connected. It is also possible to set a discontinuous crystal growth direction control void 43 1 in the direction of the direction. In this aspect, the interval of the void 43 1 is selected by the crystal growth direction in the direction connecting the source and drain regions. Or along with this interval, the direction of growth of the right next to Jing Zhao that intersects at right angles in that direction will be controlled. In the gap 431, the interval is adjusted properly, that is, the particle size of the crystal grains in this direction can be controlled. Also in the present invention, as shown in FIG. 28, the depth of the channel area set in &-^ 臈 is not penetrated a —The gap of the Si film may also be formed. Further, the gap of this shape may be formed into a discontinuous island shape. In addition, in the case of the above-noted gaps, after the p-si film formation step is completed, The protruding portion where the void is formed may be removed by etching or the like to make the surface of the p-Si film flat. Further, a specific area with a specific heat different from that of the main body is placed in the channel region of the a-Si film 413. It is also possible to control the growth direction of the BB body with different specific heat in the channel area. The manufacturing area is also good. For example, when placing a component with a specific heat greater than a-Si film, and using a light beam for short-term irradiation, The temperature rise of the a-Si film portion in contact with the above parts is small, so that crystal nuclei are generated early compared with other regions. On the other hand, the paper size applies the Chinese National Standard (CNS) A4 specification (21〇χ297). ^)--~~~ ---- -72-.I ^^^ 1--I.-. — ^ 1 ^ 1—, one In I. I „-(Please read the precautions on the back first (Fill in this page) 407303 A7 —_________ B7 V. Description of the invention (70) For example, placing a plurality of columns with a specific heat smaller than a—Si film in the direction connecting the source region and the drain region, and irradiating with energy light to the east for a short time At time, since the temperature of this part becomes higher than that of the a-Si film, the temperature of the middle part of the part placed in a plurality of rows becomes relatively low. Therefore, the first crystal nuclei are generated in this part, and the effect of preventing the occurrence of disordered crystal nuclei can be obtained. In the above-mentioned embodiment, although the case where Si or Ge is used as the material of the p-Si film 403 is exemplified, in the present invention, in addition to the above, a material such as silicon carbide (SiC) may be used. Compounds composed of Groups iv, such as gallium arsenide (GaAs), compounds composed of Groups Η and v, and Groups Π and V, such as cadmium selenide (CdSe) Combined compounds etc. "In the present invention, although A1 is used as an example of the gate electrode 405, the source electrode 407s, and the drain electrode 407d, in addition, chromium (Cr) is used. Metals such as, molybdenum (Mo) 'button (Ta), titanium (Ti), or alloys thereof may also be used. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. Although an example is shown in the present invention where the a-Si film 413 is crystallized, an excimer laser is used as the amount of light beam, but in addition, argon Laser light such as laser, YGA laser, and ion beam and electron beam are also available. Since high-density energy can be easily locally and irradiated in a short time by using such energy beams, the substrate temperature can be kept at a relatively low temperature and crystallized. (Implementation aspect 4-1) Here In aspect 4-1, the light energy intensity within the beam amplitude is used (73 --II-I-I-1-n IJ—-—1 (Please read the precautions on the back before filling this page) This paper Standards apply Chinese National Standard (CNS) A4 Zhuge (210X297 mm) «07303 V. Description of Invention (71)

The first month b of the solution's mother area (hereinafter referred to as light intensity) is monotonically increased, or crystallized from a beam in the other direction. And knife map (please read the precautions on the back before filling this page) The direction of the beam is monotonically increasing or the direction of the beam is decreasing. The beam of the distribution pattern is typical. As shown in Figure W, although the beam has a linear light intensity gradient, the light intensity is an exponential function in a certain square. It can be increased or decreased. It can be used as the light source (before shaping) of the above-mentioned beams, such as gas (He) ~ gas (Ne) laser, argon laser, carbon dioxide laser, ruby laser, excimer laser All kinds of lasers can be used as the light source (the former is the shaping) of the above-mentioned beams. However, in order to obtain high output power of the wheel and good recovery of Shi Xi, reading molecular laser is appropriate. The following are available The laser tempering method of the present invention using an excimer laser will be described. Printed by the Central Bureau of Standards, Ministry of Economic Affairs and the Consumer Cooperative, Figure 42 shows a model of the crystallization operation using the laser tempering method. Schematic sketch; in Figure 42, 1400 represents a beam irradiation device, and 41〇 represents an irradiated body illuminated by the beam; further, 1401 is, for example, a laser light generator using xeC1 excimer laser, 1402 is a mirror, and 1403 It is a light homogenizer. In this light east irradiation device 1400, the light generated by the laser light generator 1401 is guided to the beam homogenizer 1403 via the mirror 1402, and a pre-stretched pre-intensity pattern is formed there. It becomes an output state. An optical system for shaping the beam is formed in the beam homogenizer 1403. In this embodiment, the most downstream side of the optical path is provided with a light transmission gradient as shown in FIG. 31. Filter (not shown). Therefore, by adapting the paper size of the laser light generator to the Chinese National Standard (CNS) A4 (21〇_X297 mm) 74 407303 A7 A 7 ____B7 V. Description of the invention (72) The light generated by 1401 penetrates this filter, and the light is shaped into a light beam with a scheme as shown in Figure 29a. The above-mentioned beam irradiation device 1400 can output, for example, shaped into an average energy density (per unit area). (Radiation energy) is 300 mj / cm2, the low-energy-density region L is 250 mJ / cm2, and the high-energy-density region η is 350 mJ / Cm2, and the beam cross-sectional shape is 7 mm > <7111111; This light beam is irradiated on a crystallized surface of an amorphous silicon thin film or the like to crystallize a crystallized substance. The crystallizing step will be described in more detail below. First, as shown in the irradiated body 1410 in FIG. On the glass substrate 1411, a non-single-crystalline silicon film 1412 having a thickness of 85 nm is formed by, for example, a reduced pressure (: ¥ £) method. More specifically, for example, a monosilane (SiH4) gas or a disilane (Si2H6) is used. ) Gas is used as a reaction gas, the pressure is set to a number τ〇ΓΓ, and an amorphous silicon film is formed while heating the glass substrate 1411 to 35 ° C to 530 ° C. Printed by the Consumers' Cooperative of the Central Government Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). Here, a bottom layer 1413 made of, for example, Si0 2 is formed on a glass substrate 1411 to make non-monocrystalline silicon. The film 1412 may be formed on the bottom layer. The method for forming the non-single-crystal silicon film 1412 is not limited to the reduced-pressure cvd method, and for example, a plasma CVD method may be used. The film thickness of the non-single-crystal silicon film 1412 is not limited to 85 nm, as long as it is appropriately set. A specific region 1404 of the non-single-crystal silicon film 1412 formed in this way is exposed to light 10 times with a shaped excimer laser light from a beam irradiation device 1400 to melt the portion, and then exotherm Let it crystallize. In this embodiment, when the light beam is irradiated, the irradiated body 1410 is placed in an air-tight container with a window formed by a quartz plate, so that the interior becomes a real paper. The dimensions are applicable to the Chinese National Standard (CNS) A4. (210X297 public directors) 75 Printed by the Central Bureau of Standards of the Ministry of Economic Affairs and Consumer Cooperatives 407303 A7 ____— B7_ V. Description of the invention (73) ~~~: " ~~~~ Empty (about HTW) 'at room temperature ( The method of irradiating a light beam to a specific area 1440 through the above-mentioned window under the conditions of Jonah); the air-tight container is omitted in the drawing in FIG. 42. In addition, each of the above conditions is a thorough illustration. Except for using a beam of a distribution pattern whose light intensity monotonically increases from one direction to the other or decreases monotonically from the other direction, the other conditions are not special. The limit. For example, in order to crystallize the non-single-crystal silicon film 1412, it is preferable that the light energy density has a sufficient intensity and a light intensity gradient. The degree of the light intensity gradient is not particularly limited, and it is preferable to set a gradient that can be appropriately induced and controlled by considering the material and thickness of the non-single-crystalline film. Furthermore, the beam width and the number of irradiation times (the number of exposure times) of the irradiated light beam are not limited to those described above. For example, a laser beam with a stronger intensity may be irradiated only once. Also, there is no particular limitation on the shape of the cross section of the light beam, such as a triangular shape or a circular shape. Next, referring to Figs. 29a to g, a description will be given of a crystal growth action when a light beam having a light intensity gradient is used. A non-single-crystal silicon thin film is irradiated with a light beam having a light intensity pattern shown in FIG. 29a, and the temperature of the irradiation surface, as shown in 701 (temperature distribution curve) in FIG. Gradient, while the peripheral part has a sharp temperature gradient. The reason why a sharp temperature gradient is formed in the peripheral portion is that the heat released to the surrounding area is large. When the light irradiation is subsequently stopped, first, the temperature distribution curve 701 and the crystallization temperature line 702 at the intersection (near the boundary) will first drop below the melting temperature. Therefore, (please read the notes on the back before filling this page) 袈 .-Order

A •: · -11-This paper size applies to China National Standards (CNS) A4 specifications (210X297 mm) 76 Printed by Shellfish Consumer Cooperative, Central Standards Bureau, Ministry of Economic Affairs 407303 V. Description of Invention (74) Generated near this The fine crystal 704 (703 is shown as a thin film cross section, and the crystal 704 is used as a core to grow the crystal in the right direction as shown above the crystallization temperature. Here, the same as the first The situation in Figure 7 is different. In Figure 29b, the temperature gradient is formed at the center / knife, and the thermal system flows from the high-temperature region side (H side) to the low-temperature region side. The heat not only eases the sharp temperature drop. At the same time, it has the effect of inducing crystal growth to the high temperature side (right side of the figure). Therefore, the generation of crystal nuclei and their growth proceed smoothly, and as a result, not only the uniformity of the grain size and the degree of crystallinity of the crystal grains is improved, but also the long crystal grains are brought from the [side center side direction ( Crystal growth direction). That is, if a light beam gp having a light intensity gradient is used, a crystalline thin film having a high degree of movement in the direction of crystal growth can be produced. However, although the method of irradiating the light beam can be performed while the irradiation side and the substrate side are in a fixed state (immobile state), any one of the light beam or the substrate side can be moved, which further makes the movement a reciprocating motion. "Best of the Best" In the method of irradiating while moving or reciprocating, as shown in Fig. 30, it is preferable to move the light intensity gradient direction (L-H direction or H-L direction). If this is the direction, the crystal growth direction can be induced very finely, and the uniformity of the grain kneading and crystallinity of the crystal grains can be improved; further, it is suitable for the degree of light intensity gradient and the degree of light irradiation to adjust the moving speed, Then, the crystal growth direction can be induced more finely. In addition, the arrows in Fig. 30 indicate the moving direction, 71, 7 and 2 are the irradiation surfaces before and after the movement, and 713 (the oblique line) is the repeated irradiation area. And this paper scale Gu t U Choi (297_ ^ 7-I. ...... I- -I--ί I-—… 1 I.-. II-y I — ^ 1 (Please Read the precautions on the back before filling in this page} 77 407303 A7 Β · 7 V. Description of the Invention (75) Although the beam movement is shown in Figure 30, it is also possible to move the substrate side; In the case where the beam is exposed several times, for example, while the irradiation position is shifted by several to several tens% of the irradiation area at a time, and the polysilicon film produced in the above manner is irradiated, the central part is generally used as the channel area. And impure impurities such as boron or boron are implanted at the two ends to form a source region and a non-polar region to form a TFT »Furthermore, the light beam of the energy intensity pattern described in this embodiment (section 29a 圊) For the formation of a relatively narrow area of peripheral circuits such as AM-LCD (Active Matrix Liquid Crystal Display), the crystallization is effective. (Embodiment 4-2) This embodiment (about The same applies to the following aspects 4-3). Turned into a valid example. Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ----------- install— (please read the precautions on the back before filling this page) In this implementation form Used: The light intensity distribution pattern of Guangdong is shown in Figure 32a. As shown in this figure, the beams related to state 4 to 2 have a high intensity Η region 721 and a small L region 722 on a plane. There is a pattern arranged alternately in rows. Here, there is no particular restriction on the ratio of the light intensity of the Η region to the L region, so it only needs to be set appropriately. However, it is generally required that the total amount of light energy should be irradiated. The entire surface of the irradiation surface (L region and erbium region) was blended within the number of times. Furthermore, here, the erbium region was 300 mJ / cm2, the L region was 200 mJ / cm2, and the thickness of the amorphous silicon film was 50 nm. The other conditions are the same as those in the implementation mode 4 to 1. The following description will be made with reference to Figures 32a to g while explaining that the paper size in this implementation mode applies the Chinese National Standard (CNS) A4 Zhuge (2 丨 '〇 > < 297 mm) 78 407303 A7 B7 Printed by the Consumer Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs

Install ,,: ~ Order ------ '" (Please read the precautions on the reverse side before filling out this page) V. Description of the invention (77) === The situation where a boundary line crosses is here In the embodiment, as shown in Embodiment 4-1, 33 ° is performed, and it is also possible to irradiate the time (one movement (including reciprocating motion, etc.) from the nth). With this embodiment, It is possible to further improve the degree of crystallinity. In addition, 731 and 732 in FIG. 33 show the positions of the irradiation surface before and after the movement, and 733 (the oblique line) is the repeated illumination arrow as the moving direction. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. However, as shown in Figure 32a above, the light beams with strong light intensity Η and the weak part L are arranged in a stripe arrangement and the beam is not Special technology is required, and it can be easily realized by well-known technology. There are no restrictions on the means to achieve it. For example, a filter that absorbs light to a considerable extent is arranged at predetermined intervals, so that it can be produced as described in Section 34. Plum-shaped transmission The filter can be realized by setting the filter in the optical path of the beam irradiation device (for example, in a beam homogenizer). It can also be achieved by, for example, arranging a metal fiber system in parallel or side by side in parallel It can be realized by means of setting the filter in the optical path. It can also be realized by means of making a striped light intensity pattern by setting a gap in the optical path to cause diffraction interference. (Implementation Aspect 4-3) '.. Aspect 4-3 of this embodiment is a method of using light interference to impart non-uniformity to the light intensity distribution. This method is in accordance with the implementation state because it can control the light intensity distribution pattern relatively freely. Samples 4-2 are equally applicable to a wide range of paper sizes. Applicable to Chinese National Standards (CNS) Α4 Zhuge (210X297 mm) 80 Printed by Shellfish Consumer Cooperative of China Standards Bureau of the Ministry of Economic Affairs 407303 ζ 5. Description of the invention ( 78) " Crystallization. The light intensity distribution pattern of the light beam used in this embodiment is shown in Fig. 35. Such a light intensity distribution pattern is shown in Fig. 36, which can be related to each other by The two light beams 801 and 802 are irradiated simultaneously to cause light interference and are easily formed. Specifically, for example, a semi-transmissive mirror is used to divide the laser light generated from the same light into two optical paths. Mirrors cause relative angles in the mutual optical path 'to cause interference. However,' If the two related lights interfere with each other, the light intensity part (bright line part Η) and The weak part of the light intensity (the dark line part L), and the period of the interferogram can be freely changed according to the intersection angle of the two beams, and its modulation degree (for the energy intensity ratio of light between the bright line part and the dark line part) (Influence) can be easily changed by changing the energy intensity of the two beams, so the interval and intensity ratio between the bright line portion Η and the dark line portion L can be set relatively freely. Therefore, the consideration is to properly set the above-mentioned interval and intensity ratio to the thickness of the amorphous film of the irradiated surface, etc. The following description will be made with reference to Figs. 37a to 7g when irradiating a light beam formed by such an interference pattern. Crystal growth action. Furthermore, the operating conditions in this embodiment are the same as those in the previous embodiment 4 to 1. When a non-single crystal thin film is irradiated with the characteristic light beam shown in Fig. 37a, a high temperature is formed on the thin film on the bright line portion, and a low temperature distribution pattern is formed on the dark line portion B (curve 901) (Figure 37b). In the process of decreasing temperature, as shown in Fig. 37c, the crystal nucleus is 903. This paper size is suitable for Guanjia County (CNS) A4_ 秘 297Gx297y ^ thin) ~~~~--81- (Please read the precautions on the back before filling this page)-Order the employee's cooperative of the Central Standards Bureau of the Ministry of Economic Affairs to print A7 ___B7 V. Description of the invention (79) At the intersection of curve 901 and the crystallization temperature line 902 at the beginning (The lowest temperature in the low-temperature region L) occurs. If the temperature further decreases (Figure 37d), the crystal growth is induced to the L-Η direction by the heat transferred from the high-temperature region H to the low-temperature region 1, and new nuclei are generated and induced to grow in the same way ( (Figure 37e) "The occurrence and growth of such crystals have been maintained until the temperature in the high-temperature region η corresponding to the bright line portion 下降 drops below the melting temperature (37f, g 圊). Based on the crystallization mechanism described above, according to this embodiment 4__3, a crystalline semiconductor thin film having a uniform degree of crystallization and a large degree of electric field effect shift can be produced in a relatively wide range. In this embodiment, it is the same as the previous embodiment 4-2. Because the boundary line of the crystal grain boundary (the collision line of the crystal grains) is formed in the central part of the high-temperature region, it is the same as the previous embodiment. As mentioned in Example 4-2, if the direction k that intersects the alignment direction of H-L-H-L at right angles is the carrier moving direction, a high electric field effect mobility can be obtained. (Implementation Modes 4 to 4) Implementation Modes 4 to 4 are basically the same as those in Implementation Modes 4 to 3. However, in this embodiment, by dynamically adjusting the period of the interference pattern and the modulation degree, the bright line portion Η and the dark line portion L become a fluctuation change mode. The contents of the implementation modes 4 to 4 will be described below. 》 As shown in Figure 38, at least one of the two related beams is dynamically phase-modulated to form a light beam whose position of the bright line portion and the dark line portion of the interference fringe fluctuates variably. Phase modulation system, for example, to change the phase of one beam relative to the other beam in order. 〇, π / 2 I.- III -II, policy --IH---4 ^ (Please read the precautions on the back before filling in this Page) This paper standard is in accordance with the Chinese National Standard (CNS) A4 specification (21 × 297297 Magic 82 A7 B7 V. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 407303 Invention Description (80), 7Γ. This can make interference fringes The positions of the bright line portion and the dark line portion are staggered in time series, and the stripe pattern composed of the bright line portion and the dark line portion can form a fluctuating beam of light (p. 38). ○ Phase modulation can be exemplified The means are, for example, a method of dynamically changing the optical path length of one of the two beams using a reflector to change the phase, and a method of dynamically changing the refractive index of a transparent body arranged in the optical path. This optical system is grouped into the aforementioned beam homogenizer (1403 in Fig. 42). According to this embodiment, the temperature distribution pattern is replaced on the surface of the film that is the irradiation surface. The high temperature region H and the low temperature region L are formed dynamically, so the effect of inducing crystal growth to a certain direction is great. Also, because this method also has the effect of forcing impurities to be outside the effective region, it can achieve high purity of the thin film at the same time. 'A high-quality crystalline film is formed on one side. The effect of forcing impurities outside the effective region is based on the following principle. That is, because the melting point and specific gravity of the film components and impurities are different, fluctuations should be added. When the temperature changes, there is a difference in progress between the two. Therefore, 'If multiple irradiations are performed, a small amount of impurities and the film components are separated. Here, the period and modulation of the interference scheme are adjusted. It may be performed in one irradiation, or in each type and irradiation of multiple irradiations. Further, it is also possible to control the modulation degree according to each stage of crystal growth; according to this method, it is possible to induce more appropriately Crystal growth. Also, in any of the above-mentioned implementation patterns 4_3, 4—4, the Chinese national standard (€?) And the 4 paper standards are applicable. (210 '乂 297 mm) -----; ----- Installation ------- .. Order ------. ^ (Please read the notes on the back before filling in this page ) The foregoing facts 83-A7 B7 V. Printed by Shellfish Consumer Cooperative of Central Bureau of Standards, Ministry of Economic Affairs 407303 Description of invention (81 Same as 4-1 or 4-2, you can make either laser light or substrate side The person moves (including reciprocating motion) while irradiating it; by this method, the crystal growth can be appropriately controlled. However, when this movement is directed toward the parallel direction of the stripe direction formed by the bright line portion Η and the dark line portion l In progress', the effect of forcing impurities out can also be obtained in the above-mentioned embodiments 4-3. However, although the above is mainly explained by setting the temperature distribution in the direction of the surface of the irradiated area. Domain, as shown in FIG. 39, the light intensity distribution can also be made according to the light interference in the thickness direction of the irradiated film. form. The 39th circle shows the irradiated body composed of a thin film of an amorphous silicon layer Π01, a bottom layer (Si02) 1102, and a glass substrate 1103 sequentially from the irradiation direction (above the same figure). Pattern illustration. When a light beam with a light intensity distribution is incident on the up and down direction (thickness direction) of the irradiated body, the temperature distribution corresponding to this waveform is formed in the thickness direction, and because the thickness of the Shi Xi film used in Ding FT is usually thin The distance to tens of nanometers is shorter than the period of the interference fringes, so it is difficult to form a periodic temperature distribution in the thickness direction. However, the upper surface of the thin film 1101 is cooled due to heat radiation to the surrounding environment, while the lower surface (substrate side) is radiated due to heat conduction to the bottom layer 1102 and the glass substrate 1103, so there is a temperature distribution in the thickness direction, and this temperature distribution It is possible to zoom in. Further, as the means for expanding the temperature distribution in the thickness direction by using light and irradiation, the above-mentioned interference pattern can be used. Specifically, for example, if the lower-mirror reflector on the glass substrate 1103 interferes or magnifies the difference in refractive index between the film mi and the bottom layer or the glass substrate 1103, the paper is made of CNS M (21Qx29,7 < ^ equipment.: -Order ------ ', ^ (Please read the notes on the back before filling this page) 84 Λ7 --- 4G73n.q Position __ V. Description of the invention (82 ) Interference can be caused by the light incident from the film 1101 side and the light reflected at the interface of each layer. In addition, by adjusting the period of the interference fringes, a temperature distribution can be formed in the thickness direction (up and down direction), and thereby It is possible to control the crystal growth in the thickness direction. When controlling the temperature distribution in the thickness direction, consider the thickness of the non-single crystalline thin slab, the thermal conductivity of the bottom layer and the substrate, and it is appropriate to determine the appropriate setting conditions individually. The light emitted from the light sources can be divided into two, one of which is irradiated from the side of the film (above), and the other is irradiated from the side of the substrate (below) to cause interference in the film. However, in this case, the substrate as well The layer is made of the transmission material of the light beam. (Implementation mode 4-5) This embodiment mode has a temperature gradient formed on the crystallized surface by appropriately setting the pressure of the ambient gas during the crystallization process. In contrast, in the above-mentioned embodiments 4.—1 to 4—4, the light intensity pattern of the control beam is adjusted to complete the improvement and uniformity of crystallinity. Therefore, this The implementation mode is different from the implementation mode 4—i ~ 4_4. The content of this implementation mode will be described below. Printed by the consumer cooperation department of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back first) (Fill in this page) Figure 40 is a cross-sectional view of the same irradiated body (layered body) as Figure 39. 1200 is the irradiation surface of the beam, 12m is a thin film, 122 is the bottom layer, and 1203 is the substrate. The arrow represents the direction of heat transfer (exothermic direction) of the film. As shown in Figure 40, part of the heat is diffused into the surrounding atmosphere (upward direction) and outside the film's illuminated area (left-right direction in the figure). , But most The heat is transmitted to the large contact area, and the paper size of the paper is in accordance with the Chinese National Standard (CNS) A4 specification (21 × 29.7 mm) 85 4G7303 -A7 B7 V. Description of the invention (83 substrate side with large conductivity) (Below,), r universal). Among them, the conventional laser tempering method is performed in a high vacuum pressure, and r is performed by irradiating a light beam with a uniform light intensity distribution. Therefore, as described above, As explained in Sample 4- !, since a temperature gradient is hardly formed in the central portion of the irradiation surface, it is difficult for nuclei to occur in the central portion in the initial stage of the exotherm. On the other hand, in the stage where the exotherm is too light, Many nuclear phenomena often occur frequently. In this embodiment, the method is different from the conventional method described above, and is characterized by not drawing a high vacuum from the pressure of the surrounding environment, and using a gas that constitutes the pressure of the surrounding environment. The motion of the molecules causes a non-uniform site on the light-irradiated surface.> First, the principle in this embodiment 4-5 will be explained. Generally, the time of one exposure (one pulse) of pulsed light such as excimer laser is 20 ~ 50 nsec, which is quite short. In addition, since silicon and the like must be heated to a temperature above the melting point within such a short irradiation time, silicon and the like are generally made into extremely thin films with a number of + nm. With such an extremely thin film, the influence of surrounding gas molecules during the exothermic process becomes considerable. Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, that is, the gas molecules existing in the atmospheric pressure of the surrounding environment and the gas molecules in the film have a certain probability to perform collision and detachment motion on the surface of the film. The thermal energy level is smaller than that of a film heated by light irradiation, so when it collides with the film surface and detaches, it will take away the heat of the film. If the effects of such gas molecules are considered, the temperature distribution that will inevitably produce disturbances on the film surface. Therefore, if the ambient atmospheric pressure and the types of gas molecules constituting the ambient atmosphere are appropriately set, even the Chinese paper is applicable to a uniform paper scale. Standard (CNS) ΑΊ present grid (210 X 29,7 mm) 86 407303 at ____B7 V. Description of the invention (84) (Please read the precautions on the back before filling this page) When the moon beam is illuminated, also It is possible to form a part with a non-uniform temperature (a part with a low temperature) in the light-irradiated area ^ If such a part can be formed, then the generation of nuclei and the rounding of crystal growth can be achieved. To understand the basis of this consideration, the following experiments were performed. Furthermore, the crystal nucleus in the crystallization process can be conceived to play a role similar to a water vapor nucleus when moisture in the atmosphere condenses. (Experiment 1) Experimental conditions. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs, first formed on a substrate (thickness l.lmm) made of # 7059 glass manufactured by Corning Corporation (η— 二 Ξ). A Si02 layer (bottom layer) with a thickness of 200nπ1 is further prepared as an irradiated body with an amorphous silicon layer with a film thickness of 5011111 formed thereon. Next, in an air-tight container 1500 provided with a window 1501 made of quartz glass as shown in Section 43 (a), the irradiated body formed by the above-mentioned amorphous silicon layer 1503 was placed, and the air-tight container was placed within 15,000 After the air is removed, hydrogen is introduced from the hydrogen high-pressure gas container 1502 to form a predetermined hydrogen pressure in the gas fork valley device. Next, the excimer laser generated by the laser irradiation device is irradiated to the amorphous silicon layer 1503 'of the object to be irradiated through the window 1501, and thereafter, it is radiated to be crystallized. The predetermined hydrogen pressure (atmospheric pressure) mentioned above is 5x10-6torr, 1x10-5torr, lxi0-2t〇IT, 1x1〇_4〇π_, ltorr, 10 (6) and so on. Also, The laser irradiation conditions were a conventional light beam with one pulse (〗 exposures) of 30 n · sec, a beam width of 7 mm × 7 mm, and a light intensity distribution with a uniform light intensity of 350 mJ / cm 2. Next, the beam was irradiated with 100 After a few pulses, it is allowed to exotherm at room temperature to polycrystallize the amorphous silicon layer. No. λ shape degree of wealth_ 家 转 (CNS) M specification (2iG> < 297 cm) (Writing) 87 · Α7 —_____ Β7 V. Description of the invention (85) One by one ~~ 'Moreover' In Figure 43, 1511 shows an excimer laser light generator, 1512 is a mirror, and 1513 is a beam homogenizer. The relationship between the atmospheric pressure and the degree of crystallization is related to the visual observation of the six crystalline silicon thin films (polly Si) produced under the above conditions with oblique light. Χ, the Raman intensity was measured by Myraman spectrometry. S The Raman intensity when the pressure is 5x10 ~ 6torr is set to 1 to evaluate the respective crystallinity. The results are shown in Table i ^ (Table 1) Atmospheric pressure 氺 ΗΓ6 10-5 Ί 10'2 1CT1 1 10 Squint visual observation cyan mm tends to green brain significantly pure white scattering strong tends to white ship strong tends to white helper tends to white Raman intensity (relative value) 1 4 7 6 6 6 氺 ： torr Consumer cooperation of the Central Standards Bureau of the Ministry of Economic Affairs, printing and packaging. Γ Ί (Please read the notes on the back before filling in this ear} As shown in Table 1, 'In visual observation, you can find mines. The state of the Shixi film after the injection tempering process changes according to the atmospheric pressure. That is, when the hydrogen pressure (atmospheric pressure) is about 10-6torr, although the scattered light with cyan is only slightly seen, At about -5torr, the scattered light is shifted to the green side, and the whole becomes brighter. If the argon gas pressure is further increased to 10-ι, the scattering becomes significant, and a state of white turbidity is observed. After rising to 10torr, the same state was still seen. ^ On the other hand, if the crystallinity by the Raman spectroscopic method was evaluated, the sample crystallized under the condition that the hydrogen pressure was 5X10_6torr. When Raman intensity is used as the benchmark, it shows 4 times the intensity under the condition of atmospheric pressure of 1 × l0-5torr, and further between ixio-5torr and i〇t〇rr, this paper standard applies Chinese National Standard (CMS) M Grid (21.0 × 297 mm) 88 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 407303 A7 B7 -----_ --------------- -------- 5 2. Explanation of the invention (may) Show 6 to 7 times the Raman intensity. From these results, the following phenomena were made clear. Except for special cases in which molecules in the atmosphere react with thin film substances in the practice, although light irradiation is generally performed in a state where the atmospheric pressure is reduced as much as possible (high vacuum state), as shown in Table 1, when When performed in a high vacuum state, a good degree of crystallinity is not obtained. On the other hand, the degree of crystallization increases with the increase of the hydrogen pressure. From the experimental results, it is appropriate to set the atmospheric pressure of the environment to a certain value or higher in the crystallization by laser tempering. An atmospheric pressure of 1X10-2 torr is preferred. ‘Further’, if a high degree of vacuum fails to obtain a good degree of crystallinity, it is considered that the temperature heterogeneity caused by the movement of gas molecules cannot be formed. On the other hand, in the presence of argon gas pressure, the degree of crystallinity can be increased. It is thought that the hydrogen molecules take away the heat of the thin film when the surface of the thin film collides and disengages. That is, the results of Table 1 confirm the above-mentioned study. (Experiment 2) Atmospheric pressure was both hydrogen pressure 5X10-6torr and ltorr. In addition to the individual hydrogen pressure conditions, the number of irradiation times of the light beam was changed to i, 10, 1 Torr, and 500. experiment! The same was done to make a crystalline sand film (poly-Si). The Raman intensity was measured in the same manner as described above, and the influence of the 'hydrogen pressure on the relationship between the number of irradiations and the degree of crystallization was examined. The results are shown in Figure 41. As shown in Figure 41, in the case of a hydrogen pressure of 1 torr, the paper size is suitable for HUjia County (CNS) A4 (21GX297 mm) '~ ----- i. N ^ i / ^ 1 In. Mn ^ i am tn tn U3,-*-* c Please read the notes on the back before filling out this page) 89 Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs-A7 B7 V. Invention Description (87 ) — — Mann intensity increases with the number of irradiations, and it is recognized that the degree of crystallinity is improved. On the other hand, when the hydrogen pressure is 5X10-6torr, after the number of irradiations exceeds 10 times, the Raman intensity will not increase even if the number of irradiations is increased, and the degree of crystallization will not increase. From this result, it is known that, in the method of completing the crystallization by irradiating the light beam a plurality of times, it is preferable that the atmospheric pressure is not evacuated to a high vacuum. In this result, at least, it can be recognized that if the hydrogen pressure is adjusted to ltorr, the degree of crystallization will increase at the same time as the number of irradiations increases. Even though the results under the conditions exceeding 10 torr are not shown in Experiment 1, it is considered that a good crystalline thin film can be formed even if the condition exceeds 10 torr. The reason is as follows. When the argon gas pressure increases, the number of hydrogen molecules that are collided and detached on the surface of the film increases, so it can be imagined that the effect of generating uneven temperature distribution becomes weak. However, there are additional effects as follows. That is, if the temperature of the film is heated above the melting point by light irradiation, the vapor pressure inside the film increases; although this vapor pressure hinders the growth of the crystals and causes the scattering of the material constituting the film, if the pressure of the environment is high , The scattering of the thin film material will be suppressed due to the pressure, and as a result, the progress of crystallization will be smooth. However, in Experiments 1 and 2, although the gas constituting the ambient atmosphere was hydrogen (H2), which has a large specific heat and a high cooling effect, the gas constituting the ambient atmosphere is not limited to argon. For example, an inert gas such as N2, He, and Ar may be used, or a mixed gas obtained by mixing two or more of these gas molecules. However, due to the type of gas, the contrast heat and the effects (including adverse effects) caused by thin film materials are different, so according to the type of gas molecules 袈 -------- r order (Please read the precautions on the back before (Fill in this page) This paper size is applicable to China County (CMS) A4 · (21GX297 mm) 90 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 407303 A7 — —-—----丨 __Β · 7 V. Invention Note (88 y '~~ " -— It is advisable to set the gas pressure appropriately. Although the above uses an excimer laser as the light beam, the beam used in the present invention is not limited to excimer laser. For example Not just take

The Ne laser If material continuously oscillates the laser, and light such as an ultraviolet lamp can also be used. In addition, although the present invention is particularly useful for the polycrystallization method, it is a matter of course that it can be used as a method for producing a single crystal. Furthermore, although the content of the present invention has been described above focusing on the method for forming a crystalline semiconductor thin film, the technology related to the present invention can be widely applied to the use of light energy for material modification, such as melting of polymers. Forming ', thermal tempering operation for alloys, etc. (Embodiment 5-1) The embodiment 5-1 of the present invention will be described with reference to Figs. 44 and 45. First, as shown in FIG. 44, an amorphous silicon film 522 is formed on the glass substrate 52 as a front-end semiconductor film by a plasma eVD method. Although the film thickness of this amorphous silicon thin film 522 is not particularly limited, it usually varies according to its application. For example, it is about 300 ~ 1000A when used in a TFT, and it is used in a photo sensor and a photovoltaic element (solar cell, etc.) When it is formed, the thickness is more than 1 left and right. Secondly, "the glass substrate on which the above-mentioned amorphous silicon thin film 522 is formed is placed on a substrate base 535", and the laser beam 531a of the first energy beam XeCl excimer laser 531 for crystallization is placed in a stationary state, and preparation The laser beam 532a of the second energy beam Ar laser 532 for heating is irradiated on the amorphous silicon paper. The size of the paper conforms to the Chinese National Standard (CNS) M specification (210X297 mm). Order. ¾. (Please read first Note on the back, please fill in this page again) 91 407303 A7 Β · 7 V. Description of the invention (89) Put on the film 522 for 5 seconds. More specifically, the above-mentioned xea excimer laser 531 has an oscillation frequency of 50 Hz, a wavelength of 308 nm, and an irradiation energy of 300 mJ / cm2; and the Ar laser 532 has a continuous oscillation with a wavelength of 488 nm and an output power of 20 W / cm2. The laser beam 531a is reflected by the half mirror 533 and is irradiated. In the irradiated area of each of the laser beams 531a, 532a in the amorphous silicon thin film 522, the field 531b '532b is in a band shape. Moreover, the laser beam 532a is irradiated to the irradiation area including the laser beam 53la. 1b on a wider irradiation area 532b. In addition, when the half-mirror 533 or the like as described above is used and the laser beams 53a and 532a are irradiated vertically on the amorphous silicon thin film 522, it is easy to reduce the deviation of the crystal grain size and the electric field effect mobility. However, it is not always necessary to accurately illuminate the lens vertically. For example, a two-sided mirror may be arranged slightly staggered to illuminate it so that it is substantially vertical. It is also preferable to use various lasers such as ArF, KrF, and XeF excimer lasers with a wavelength below 400 nm instead of XeCl excimer laser 531. On the other hand, use various wavelengths from 450 to 5 50 nm Lasers can be used instead of Ar lasers. Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs -------------- (Please read the note on the back before filling out this page) Here, the amorphous silicon thin film 522 is, for example, a film thickness of 1〇 In the case of 〇〇A, it has a transmittance characteristic as shown in Fig. 1. That is, for example, for light having a wavelength of about 500 nm, its absorption coefficient is 105 cm-1, which is the reciprocal of the film thickness, and for light having a wavelength shorter than 400 nm, its absorption system is 106 cm- i 'is almost impenetrable. Therefore, most of the laser beam 531a of the XeCl excimer laser 531 with a length of 30 8nm is absorbed near the surface of the amorphous sand film 552, and the temperature rise caused by it and the heat conduction, The main amorphous silicon thin film 522 is heated to about 12001. "Other-this paper size is applicable to the Chinese National Standard (CNS) A4 Zhuge (210X297 mm) 92. Printed by the Bayer Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs-A7. ------ & 7 _ V. Description of the invention (90), the laser beam 532a of the Ar laser 532 with a wavelength of 488 nm is absorbed in almost the entire area of the thickness direction of the amorphous silicon thin film 522 through thermal conduction The glass substrate 521 is heated to about 400 ° C. Therefore, after the laser beams 531a and 532a are irradiated, the amorphous stone thin film 522 is slowly cooled to promote crystal growth and form a polysilicon thin film 523 with large crystal grains. In order to evaluate the crystallization state of the polysilicon thin film 523 formed as described above and the polysilicon thin film crystallized only by the XeCl excimer laser 531 as in the conventional case, the measurement of Raman scattering was performed. The respective measurement results are shown in Figure 45 with the symbol P or R. As shown in this figure, compared with the case (R) of the laser beam 531 a that only irradiates the XeCl excimer laser 531, it can be confirmed that the Raman intensity of the laser beam 532 a that is irradiated with the Ar laser 532 is large. Moreover, the crystallinity is excellent. Then, the glass substrate 521 on which the amorphous silicon thin film 522 is formed is irradiated with a laser beam 53 1 a, _ 532a over the entire area of the amorphous thin film a while moving at a speed of, for example, 3 mm / sec. A plurality of regions of the formed polysilicon film 523 were subjected to scattering measurement one by one to study the distribution of its crystallization, and it was confirmed that it has very high uniformity. Furthermore, in order to improve the uniformity of crystallization, as described above, the irradiation area 532b of the laser beam 532a includes the irradiation area 531b of the laser beam 53la, and the range is preferably wider. (Embodiment 5-2) As shown in FIG. 46, “the heart laser 532 of the above embodiment 5_1 is replaced by, for example, an infrared lamp 534 with a wavelength of 4 # m, ie, a glass substrate system”, for example Figure 47 has the transmittance characteristics as shown in the figure, and the red paper size applies the Chinese National Standard (CNS) A4 specification (210x297 cm). Good (谙 Please read the notes on the back before filling this page) 93 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, A7 ____._ B7 V. Description of the invention (91) The infrared light 534a emitted by the outside light 534 penetrates the non- The crystalline silicon film 522 is mostly absorbed by the glass substrate 521. However, if the laser beam 531a irradiated with the XeC1 excimer laser 531 is irradiated, the amorphous silicon thin film 522 is mainly heated by the laser beam 531a as in Embodiment 5_ 丨; on the other hand, By the infrared light 534a of the infrared light 534, the glass substrate 521 is mainly heated. Therefore, after the irradiation of the laser beam 531a and the infrared 53A is completed, the amorphous silicon film 522 slowly cools the rain to promote crystal growth, and forms a polysilicon film 523 with large crystal grains. Except the use of the infrared lamp 534 as described above, the measurement results of the Ra * man scattering measurement of the polysilicon film 523 formed under the same conditions as in Embodiment 5-1 are shown in FIG. 45 with the symbol Q. . As shown in the figure, it can be confirmed that the Raman scattering intensity and crystallinity are higher than those in the case (R) of the laser beam 531a that irradiates the XeC ^ excimer laser 531 only. Also, "confirm that the uniformity of the crystal grains is the same as that of the embodiment 5-1. Furthermore," except for the above-mentioned infrared 534a, the same as the embodiment 5-1 "further uses an Ar laser 532 laser beam. 532a irradiation is also very good. It is also preferable that the infrared rays 534a use a half mirror similarly to Embodiment 5-1 so that the amorphous silicon film 522 is irradiated vertically. (Embodiment 5-3) '.. Embodiment 5-3 of the present invention will be described with reference to Figs. 48 to 50. First, as shown in Figure 48, on the glass substrate 521, the Chinese National Standards (CNS) A4 Zhuge (210X297 mm) is applicable to the paper size of the inductive-coupling paper. (I first read the precautions on the back before reading (Fill in this page) 94 The Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs printed 407303 at_____R7__ V. Plasma CVD device of the invention description (92) to form a microcrystalline silicon film 524 as a precursor semiconductor film. In detail, for example, a mixed gas in which a monosilane gas (SiH4) and hydrogen are mixed at a ratio of 2 ·· 3 is used as a reaction gas, and the substrate's degree of reaction (reaction > degree of melon) is 350C ~ 5 3 0 . 〇 Under a reaction condition of a pressure of several mTorr, a microcrystalline silicon thin film 524 having a film thickness of 85 nm is formed. It is to be noted that instead of the microcrystalline silicon film 524, an amorphous silicon film 522 may be formed in the same manner as in Embodiment 5-1. It is also possible to use an lp (low power) CVD device and a sputtering device instead of a plasma CVD device. Next, the glass substrate 521 on which the above-mentioned microcrystalline silicon thin film 524 is formed is heat-treated at 400 ° C to 500 ° C for 30 minutes. The above is performed to dehydrogenate the argon in the microcrystalline silicon 'thin film 524. That is, during the laser tempering process described later, the hydrogen mixed into the microcrystalline silicon film 524 is abruptly released to prevent damage to the microcrystalline silicon film 524. Then, the laser tempering is performed. That is, as shown in FIG. 49, the above-mentioned glass substrate 521 'is irradiated with a laser beam 531a irradiated with XeCl excimer laser 531, and incandescent light of incandescent lamp 542 in a container 541 formed with a quartz plate to form an irradiation window 54a. 542a, crystallizes the microcrystalline silicon thin film 524 to form a polysilicon thin film 523 ^ More specifically, the above-mentioned laser beam 531 & has a pulse amplitude of several 10 ns, a wavelength of 308 nm, and an irradiation energy of 350 mJ / cm2 'The number of irradiations is 10 times. The laser beam 53 1 a is irradiated through a laser light attenuator 543, a homogenizer (laser light homogenizing device) 544, and a reflector 545. On the other hand, white heat light 542 & The microcrystalline silicon thin film 524 is heated to about 400 ° C. Furthermore, by placing the above polysilicon film 523 in the atmosphere of a hydrogen plasma i. — ^ Ϋ — ^ ϋ n ^ — ιml — ^ n TJ is · r, a § (Please read the precautions on the back before filling (This page) This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 mm) 95 *-V. 407303 A7 R7 Invention Description (93 Consumption cooperation between employees of the Central Bureau of Standards of the Ministry of Economic Affairs, printing and heating to above 35G ° C ' Oxidation treatment is performed on the cut portion of the polylithium thin film 523 with wind as its terminal. When measured by SEM and TEM, the crystal size of the polylithium thin film formed as described above is 0.7 μm. In the known polysilicon film, the crystal grain size is determined to increase by 0. In addition, the mobility of the electric field effect is increased from 50 cm2 / V · sec to 80 cm2 / v · ca; further, The total defect density at the interface of the polysilicon thin film 以及 and the film was reduced from 丨 3χ 〇ncm_ 2eV_ i to 1.0x10% · ^-!. That is, by heating with a white light lamp during the irradiation of the laser beam 53ι & Both increase the crystal size of the polysilicon film 523 and increase the film quality. When the irradiation conditions of the beam 531a were changed for various experiments, crystallization occurred at an irradiation energy of 200 mJ / cm2 or more, and microcrystalline silicon disappeared at 500 mj / cm2 or more. At 300 mj / cm2 or more, In the range below 450 mJ / cm2, the crystal growth is sufficiently performed to increase the crystal grain size. When the number of irradiations is 5 or more, the occurrence of crystal defects is suppressed and the crystallinity is improved. Next, by A thin film transistor (TFT) is formed by performing a predetermined film formation process of an insulating film and a conductive film, forming a pattern by etching, and implanting ions, etc. »In addition, a pattern of a polysilicon film 523 is implemented before laser tempering When measuring the gate voltage (Vg)-electrode current (Id) of the TFT formed as described above, as shown in Fig. 50, compared with the conventional TFT, the drain current of the idle voltage becomes Suddenly, the improvement of the subcritical current characteristics was confirmed, and the threshold voltage was also decreased. The nn ^^^^ 1 mf I ^-^-ii--ul — ~ 1 —I- I, One by one (Please read the notes on the back before this page) Printed in China National Standard (CNS) A4 (2 丨 〇 X 297 mm) 96 A1 B-7 Printed by the Consumers 'Cooperative of the Central Bureau of the Ministry of Economic Affairs. 5. Description of the invention (94) Furthermore,' Illuminate the above-mentioned thunder The light beam 53a is emitted, but the white heat light 542a is not irradiated at the same time; for example, as shown in FIG. 51, a glass substrate 521 is placed on a substrate base 535 that can be moved in the horizontal direction, and along the direction shown in FIG. While moving it in direction, irradiate the white heat light 542 & on the front side of the moving direction than the irradiation area of the laser beam 53 Ia on the microcrystalline silicon film 524; or before heating with the laser beam 53 1 & The same effect can also be obtained by first applying white heat light 542a. (Embodiment 5-4) The TFT of Embodiment 5-4 of the present invention will be described with reference to FIGS. 52 and 50. * First, as shown in 52 ', an amorphous silicon thin film 522 is formed on a glass substrate 521 using a plasma CVD method. Specifically, for example, a monosilane gas (a mixture of SiR0 and hydrogen gas is used as a reaction gas, and the film thickness is 82 under the reaction conditions of a substrate temperature of 180 ° C to 300 ° C and a pressure of 0.8 Torr. nm amorphous silicon thin film 522. Next, as in Embodiments 5 to 3, a dehydrogenation treatment was performed on the glass substrate 521 on which the above-mentioned amorphous silicon thin film 522 was formed. Next, the glass substrate 521 was drawn along FIG. 52. In the direction indicated by the arrow a, the laser beam 531a 'of the XeCl excimer laser 531 and the excimer light 551a of the excimer lamp 551 are irradiated to crystallize the amorphous silicon film 522 and form a polysilicon. Chess 523. In more detail, the irradiation energy of the laser beam 531a is 350 mJ / cm2, and the irradiation area 53 lb of the amorphous stone film 522 is 500; wmX 70mm band. Also, with The movement of the glass substrate 521 makes the pulse of the laser beam 531 a -------- ^ ----- i-- (Please read the precautions on the back before filling in this page)

.1T This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 male thin) 97 V. Description of the invention (95 -A 7 B7) The printed area 531b printed by the staff consumer cooperative of the Central Government Bureau of the Ministry of Economic Affairs overlaps 90 each time % Method, irradiate the laser beam 531a 10 times in the entire area of the amorphous silicon thin film 522 respectively. On the other hand, the quasi-knife light is from the visible light to the ultraviolet light, directly, and through a concave mirror 552 is irradiated on the 5 mm x 70 mm irradiation area 551b including the above-mentioned irradiation area 53 lb of the laser beam 53 u, so that the amorphous silicon film 552 is heated to about 500 ° C. Further, the same as Embodiment 5-3 The hydrogenation treatment was carried out. The crystal particle diameter of the polysilicon film 523 formed in the above manner was measured using SEM and TEM, and the result was 1 μm; the crystal was confirmed by m ′ with respect to 0.3 of the conventional polysilicon film. The particle size increases. The electric field effect mobility has increased from the conventional 50 cm2 / V · sec to 120 cmVv · sec; moreover, the total defect density at the interface of the polysilicon film 523 and in the film is from 3 χ 1 〇12cm_2 eV-1 reduced to ΐ · ΐ X i〇i2crn-2 ev-1. That is, by irradiating the laser beam 531a with heating by the excimer lamp 551, the crystal particle size of the polylithium film 523 can be increased, and the film quality can be improved. Samples 5 to 3 Similarly, a predetermined insulating film and a conductive film are formed, a pattern is formed by etching, and ions are implanted to form a TFT. ○ The gate of the TFT formed as described above is measured. Voltage (Vg) —Drain current (Id), as shown in Fig. 50. Indeed, compared with the conventional tft, the 'drain current to the gate voltage suddenly starts, and the subcritical current characteristic k rises'. It is confirmed that the threshold voltage is reduced from 5.0V to 4.2V. (Implementation 5-5). ^ Ϊ́τ -------. ¾. (Please read the precautions on the back before filling this page ) Good paper once again applies to the Zhongguanjia ladder standard (c is called Congbi (21QX297). The employee's consumer cooperation of the Central Standards Bureau of the Ministry of Economic Affairs DU303407 -at ______B7 _ V. Description of the invention (%) About the implementation status of the present invention Patterns 5 to 5 are explained with reference to Figures 53 and 50. First, and implementation 5 4 Similarly, an amorphous silicon thin film 522 is formed on a glass substrate 521 and subjected to a dehydrogenation treatment. Next, as shown in FIG. 53 (a), while moving the glass substrate 521 in the direction indicated by arrow A, XeCl excimer is irradiated. The laser light 531a of the laser 531 and the excimer light 551a of the excimer lamp 551 are heated by a heater 561 from the bottom surface side to form a polysilicon film 523. In other words, although the above-mentioned laser beam 531a and the irradiation conditions of the excimer light 55a are the same as those in Embodiment 5-4, the heater 561 'is used to further heat the entire glass substrate 52 丨 to 450 ° C. Part of it is different from the implementation mode 5 to 4. Further, 'argon removal treatment was performed similarly to Embodiment 5-3. The SEM and TEM were used to measure the crystal particle size of the polysilicon film 523 formed in the above manner, and the result was 1 to 5 μm. Compared with the conventional polysilicon film of 0.3 / zm, it was confirmed that the crystal particle size was increased. Big. In addition, the mobility of the electric field effect increased from the conventional 50 cm2 / V · sec to 150 cm2 / V. Sec; and the total defect density at the interface of the polysilicon film 523 and in the film was changed from .3 x 1012cm-2eV. -1 is reduced to SJXlOHcm-kV-1 »That is, by irradiating the laser beam 53la with heating by the excimer lamp 551 and the heater 56j, the crystal grain size of polysilicon 523 is further increased. Large, and the film quality is improved. Again, TFTs are formed in the same manner as in the embodiment 5-3. When the gate voltage (Vg) -drain current (Id) is measured, as shown in FIG. 50, the paper size is more common in China than in the embodiment 5. Standard (CNS) A4 specification (2 丨 0x297 mm) Packing · Order A (Please read the notes on the back before filling out this page) 99 Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 407303 at B7 V. Description of Invention (97 ) ~ 4 'The drain current to the gate voltage starts suddenly, and the improvement of the subcritical current characteristics is also confirmed. In addition, "when the temperature of the glass substrate 521 is variously set and tested," the effect of improving the crystal quality can be obtained if the temperature of the glass substrate 521 is heated to 300 ° C or higher, but it can reach 600. (When it is 3 or more, the glass substrate 521 is deformed, and it becomes difficult to produce a TFT or the like. (Embodiment 5-6) The embodiment 5-6 of the present invention will be described in accordance with 54th and 50th. First, as in Embodiments 5 to 4, an amorphous silicon thin film 522 was formed on a glass substrate 521 and subjected to an argon removal treatment. Next, as shown in FIG. 54, the glass substrate 521 was moved along the arrow A Move in the indicated direction, while irradiating the laser light 571a of the KrF excimer laser 571 and the excimer light 551a of the excimer lamp 551, and heating the glass substrate 521 from the bottom side with a heater 561 to form a polysilicon film 523 Here, if compared with Embodiment 5-5, the main difference is that the above-mentioned excimer light 551 a is a portion that is irradiated from directly above the glass substrate 521 and penetrates the wavelength selective reflection plate 572, and KrF is used. The excimer laser 571 replaces the XeCl excimer laser 531, and the laser beam 571a is irradiated by the wavelength selective reflection plate 572. In addition, the excimer light 55 1 a is irradiated to a scale including the laser beam 571a. Shooting area 571b in 5mmX 100 mm irradiated area 5511? "Other heating conditions are the same as the implementation of 5-5. The wavelength-selective reflective plate 572 used above-the reflection wavelength of this paper applies Chinese national standards ( 〇?) Eight 4% grid (210/297 Gongchu) ---------- install-(Please read the precautions on the back before filling in this f)

11T 100 A7 B7 Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. 5. Description of the invention (98) Light shorter than 280 nm. On the other hand, light with a wavelength longer than 280 nm is transmitted through. Therefore, the laser beam 571a (wavelength 248 nm) using the KrF excimer laser 571 of KrF in the discharge is reflected by the wavelength selective reflection plate 572 and is irradiated to the amorphous silicon thin film 522 almost vertically. The excimer light 551a in the ultraviolet region passes through the wavelength selective reflection plate 572 and is irradiated to the amorphous silicon film 522 almost vertically. Further, in the same manner as Embodiment 5-3, a dehydrogenation treatment was performed. As described above, the laser particle 57a and the excimer light 551a are vertically irradiated onto the polysilicon thin film 523 formed by the amorphous silicon thin film 522, and the crystal particle size, electric field effect mobility, and defect density are respectively different from the implementation state. 5 to 5 are the same, 1 · 5 / Z m, 150cm2 / V · sec, and 8.7 X 10ucm—2eV_ 1, but the deviation of the crystal grain size and electric field effect mobility in the areas of Jushi Xibo 523 It is even less, and the substantially uniform characteristics are obtained in the whole of the polysilicon film 523. Further, a TFT was formed in the same manner as in Embodiment 5-3. When the gate voltage (Vg) -drain current (Id) was measured, 'as shown in FIG. 50, the same characteristics as in Embodiment 5-5 were obtained. . In addition, by using the above-mentioned KrF excimer laser 571, selective reflection penetration of a wavelength corresponding to a laser beam or the like by a wavelength selective reflection plate 572 can be easily performed. , ArF, ArCl and other short-wavelength lasers are also available. (Embodiment 5-7) Embodiments 5 to 7 of the present invention will be described with reference to Figs. 54 to 56 "/ ^ * XTC \ 卞 k I 丁 Ｍ 公

In. 1-—II — ^ 1 1-I-I-^^ 1 1 ^ — 1—-— T4, τ (谙 Please read the notes on the back before filling in this page) 101 Staff Consumer Cooperatives, Central Bureau of Standards, Ministry of Economic Affairs Print A 7 _____B7 V. Description of the Invention (99) In this embodiment 5-7, compared with embodiment 5-6, the difference is that the irradiation area 551b of the excimer light 551a is 5 mm X The area of 7 mm and the heating temperature of the amorphous silicon thin film 522 by the excimer lamp 551 are variously set; other heating conditions are the same as in the embodiment 5_6. That is, 'adjust the irradiation intensity of the excimer light 55a in FIG. 54 and set the heating temperature of the amorphous silicon film 522 in various ranges from room temperature to 1200 ° C to form a polysilicon film 523, The crystal grain size of polysilicon film 523 and the mobility of electric field effect were measured. As shown in Fig. 55, if the amorphous silicon thin film 522 is heated to about 300t or more ', the crystal grain size of the polysilicon film 523 becomes larger in accordance with the heating temperature, and it is 1,000. It becomes the maximum 5 / z m or more. If it exceeds 1000. 〇, a part of the surface of the glass substrate 521 is melted, which hinders crystal growth and formation, so the crystal grain size becomes small. Also, as shown in Fig. 56, the electric field effect mobility of the polysilicon film is indeed heating the amorphous silicon film 522 to about 300. Above 0 ° C, it will increase in response to the increase in temperature, and it becomes 450 cm2 / V.sec at 1000 ° C. At the same time, it will decrease again if it exceeds 1000 ° C. That is, the amorphous silicon thin film 522 is heated to 600 by irradiating the laser beam 571a with the heater 561 to heat the glass substrate 521 and irradiating with the excimer light 551a. (: ~ 1000 ° C, in particular, the effect of increasing the crystal particle size of the polysilicon film 523 and the improvement of the film quality can be obtained. Also, the above-mentioned polysilicon film 523 is formed in the same manner as in Embodiment 5-3. When the TFT measures the gate voltage (Vg) and the drain current (Id), for example, the standard size is 11¾ turns (—) Ege (2iQx 297 Gong Chu--102-II Policy I ~~ Order I — N (Please read the precautions on the back before filling out this page) Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 407303 A7 _____B7 V. Description of the invention (100) If the heating temperature of non-sa Shixi film 522 is 600 As shown in Section 50, it is possible to obtain better TFT characteristics compared to the implementation aspects 5-5, 5 ~. (Embodiment Aspects 5-8) About Implementation Aspects 5 ~ 8 of the present invention It will be described with reference to Figs. 57, 58 and 50. In this embodiment 5-8, the main difference compared with the foregoing embodiment 5-7 is that the Xe flash lamp with pulse light is used. 581 replaces the excimer lamp 55. In more detail, as shown in FIG. 57, the same 'KrF quasi-scores as in the embodiment 5_7 The laser beam 571a of the laser 571 is irradiated on the amorphous silicon thin film 522 in an irradiated region 571b in a stripe pattern of 500 × mx200.mm. On the other hand, the visible light emitted by the Xe flash 581 is Xe in the ultraviolet region. The flash light 58a is irradiated on the 5 mm × 200 mm irradiation area 581b including the irradiation area 571b of the laser beam 571a described above, so that the amorphous silicon film 522 is heated to about 1000 ° C. Again, this is again. As shown in FIG. 58, the flash light 58la is adjusted to be synchronized with the irradiation pulse of the laser beam 571a, and is irradiated as a pulse spanning the width before and after the irradiation pulse. The irradiation pulse of the laser beam 571a is The irradiation period is a pulse width of 2/3 or less. The heating conditions other than the above are the same as in aspects 5 to 7. The crystal particle size and electric field effect of the polysilicon film 523 formed in the above manner. The degree of movement is approximately the same as when the amorphous silicon film 5 2 2 is heated to 1000 ° C in the implementation aspect 5_7; however, in the implementation aspect 5_7, the Chinese paper standard (CNS) A4 applies to this paper size Rule ^ ΤΓ〇 χ297 mm) ~ -103-1.--I-1 n 1 ^ 1 _ I — ^ 1 J ·-----J -I, one 5 mouths,!--I ----- II 1: 1 (Please read the precautions on the back before filling this page) Printed by the K-Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ΑΊ ____ Β7 V. Description of the Invention (101) 'The glass substrate 521 has some deformation, and vice versa, In this aspect 5-8, deformation does not occur, but it becomes more easy to form a suitable semiconductor circuit. Moreover, because the Xe flash 581 has a high heating efficiency, it can heat a large area, so it can easily improve its performance. TFTs are formed in the same manner as in the embodiment 5-3. When the gate voltage (Vg) -drain current (id) is measured, as shown in No. 50, it can be obtained more than the embodiment 5-7. For good TFT characteristics. (Embodiments 5-9) Embodiments 5-9 of the present invention will be described with reference to Figs. 59 and 50. * In this embodiment 5-9, as shown in FIG. 59, the laser beam 57la emitted by the KrF excimer laser 571, which is the same as embodiment 5-8, is reflected by the wavelength selective reflection plate 572, While being irradiated to the strip-shaped irradiation area 571b of about 500 / zmX200 mm in the amorphous silicon thin film 522, it was issued from the use of KTP crystals to convert the laser beam emitted by the YAG laser into YAG with a wavelength of 1/2 The laser beam 591a of the laser device 591 is reflected by the reflection plate 592, and is irradiated to a 5 mm x 200 mm irradiation area 59lb in the amorphous silicon film 522. As described above, with the wavelength selective reflection plate 572 and the reflection plate 592, the laser beam 57a and the laser beam 591a are incident on the amorphous silicon film perpendicularly. In addition, the irradiation timing of the laser beam 571a and the laser beam 591a, the turning amplitude, the irradiation energy of the laser beam 571a, and the heating temperature of the glass substrate 521 by the heater 561, etc., are the same as in the embodiment 5-8. the same. By the laser beam 59la of the YAG laser device 591 described above, the amorphous 1 ^ 1. II —1 — ^ ϋ II-I. — ^ N In In n ^ i If, a ffJ (Please read the note on the back first Please fill in this page again for this matter) This paper size applies Chinese national standards (CNS > A4 Zhuge (210 乂: 297mm) 104 Printed by the Consumers ’Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs _A7 _____B7 V. Invention Description (l〇 2) The heating temperature of the silicon thin film 552 is in the range from room temperature to 12000t. Various settings are made to form the polysilicon thin film 523. When measuring the crystal grain size and electric field effect mobility, the heating temperature of the amorphous silicon thin film In the case of rc, it becomes the largest 5_5 # m and 60〇cm2 / V. Sec, respectively. That is, by using the YAG laser device 591 in the preliminary heating, the amorphous silicon film 522 is heated to Comparing the two temperatures, the glass substrate 521 will not be deformed and melted, and the impurity is mixed into the polysilicon film 523 compared to the case where the amorphous stone film 522 is heated by the quasi-cricket lamp 55 1 in the embodiment 5-7. , Can obtain a better crystalline polysilicon film 5 2 3. However, when amorphous silicon is heated When the film 5 2 2 to 1200. 0, either the crystal particle size or the electric field effect mobility will decrease. This is because, with the YAG laser device .591, microcrystalline silicon has been formed during preliminary heating, However, this situation will have an adverse effect on the crystal growth of KrF excimer laser 571. In addition, a TFT is formed in the same manner as in Embodiments 5 to 3; when the gate voltage (vg)-the drain current (Id) is measured As shown in Section 50 (b), the TFT characteristics obtained are better than those of Embodiment 5-8. Moreover, the laser device for preheating is not limited to the above iYAC} laser device 59i; for example, using XeC1 standard Pulse lasers such as molecular lasers can also have wavelengths different from those of KrF excimer laser 571. Moreover, by using the mixing ratio of the gas, etc., the pulse width is longer than that of KrF excimer laser 571. When For example, the same effect can be obtained when irradiation is performed at the timing shown in Fig. 58. Furthermore, a continuous oscillation laser device such as an Ar laser can also be used. Furthermore, in each of the above-mentioned embodiments, examples are given. Use silicon (si) as tn mu n 1 ^ 1 n ^ itn ^ in ^ — tn ^ (Please read first Please fill in this page again if you need to pay attention to this page.) This paper size is suitable for financial affairs and family transfer (⑽) A4 ^ (2lQx297 Public Magic 105 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs _A7 ____B7 V. Description of Invention (103) Semiconductors For example, but not limited to this; for example, use of germanium (Ge) and gallium arsenide (GaAs) and other n-v semiconductors, zinc selenide (ZnSe), etc. The conditions are not necessarily the same, but it is also confirmed that the same effect can be obtained. In addition, silicon carbide (SiC), silicon germanium compound (SiGe), etc. can also be used. The laser beam 53 1A irradiated to the amorphous silicon film 522 may travel from the glass substrate 521 side, or may travel from both the amorphous silicon film 522 side and the glass substrate 521 side. In addition, instead of the glass substrate 521, an organic material substrate such as quartz or plastic may be used, and an object having an insulating film formed on the surface of the conductive substrate may be used. In addition, the laser beam 532a for pre-heating does not irradiate the entire area of the amorphous silicon thin film 522, but irradiates only the area requiring high TFT characteristics, and the other areas are the same as .. It is possible to irradiate only the laser beam 53 1 a etc. for crystallization (Embodiment 6-1) The following will describe examples of thin film transistors for semiconductor devices that are suitable for use in liquid crystal display devices. In an active matrix type liquid crystal display device, a thin-film transistor provided in an image display area must improve the uniformity of its transistor characteristics in order to reduce the unevenness of the displayed image; on the other hand, the The thin film transistor used in the driving circuit of the peripheral part must be highly responsive. However, regardless of the various crystal growth methods reviewed, it is not easy to obtain both uniformity of characteristics and high response. Therefore --.- I-* 1 ^ ml Λ-I 1 nn -a aJ (Please read the precautions on the back before filling this page) This paper is suitable for Guancai County (CNS) (2 丨 with 297 public directors) ) 106 Printed by the Shellfish Consumer Cooperative of the Central Government Bureau of the Ministry of Economic Affairs 407303 A7 A 7 __ __ B7 __— __ V. Description of the Invention (104) In this embodiment, the irradiation is performed on the substrate formed on the substrate. The method of irradiating each region of the semiconductor film (amorphous silicon layer) is different from each other to obtain the characteristics required by the respective domains. That is, after the first laser light is irradiated on the entire surface of the substrate or only the image display area, the second laser light is irradiated to the area of the driving circuit portion with a higher energy density than the first laser light. . Hereinafter, the laser tempering device and the laser tempering method will be specifically described with reference to the drawings. The laser tempering device used in this embodiment can basically use a component having the same device as the conventional device shown in FIG. 9 described above. In Fig. 9, 151 indicates a laser oscillator, 152 indicates a mirror, 153 indicates a homogenization device, 154 indicates a window, 155 indicates a substrate having an amorphous silicon layer, 156 indicates a pedestal, and 157 indicates a control device. However, when the laser of the amorphous stone layer is tempered, the laser light oscillated from the laser oscillator is guided to the homogenizing device 153 by a mirror, and is formed into a laser light having a predetermined shape with uniform energy. The substrate 155 fixed to the pedestal 156 is irradiated into the processing chamber through the window 154. However, the control device 157 may limit the irradiation of laser light 'to each predetermined area of the substrate 155, and may also control the irradiation conditions in each area to be different. Using the above-mentioned laser tempering device, first, the laser beam whose beam cross-sectional shape is adjusted by the homogenizing device 153 to be linear (for example, a width of 300 # m and a length of 10 cm) has a mass density of 28 mJ. / crn2, and while moving the substrate 155, the irradiation areas are partially overlapped to perform the first laser light irradiation (scanning irradiation using linear laser light) irradiating the entire surface of the substrate 155. Moreover, this laser light irradiation is only displayed on the image shown in 60th (please read the precautions on the back before filling in this page) The size of the paper is applicable to China National Standard (CNS) A4% grid (210X297 mm) 107 407303 _A7 ^ -____ B7___ V. Description of Invention (105) Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs m · HI fm l · 1 ^ 1 mm ^ f —id ^ — \ *, T (please first Read the precautions on the back and fill in this page.) You can also do it in the area 155a. Secondly, the area where the laser light is irradiated to the drive circuit part with an energy density of 400mj / cm2 higher than the above. 5 5 b. Second laser light irradiation of 155c (scanning irradiation using linear laser light) The above-mentioned substrate 155 is used, for example, an amorphous silicon layer is formed on a glass substrate by a plasma CVD method with a film thickness of 500 A After that, β obtained by dehydrogenation treatment at 45 ° C for 1 hour is used for laser light. For example, the pulse amplitude is 25 ns, and it is oscillated at an interval of 30 Ηζ. 155 moves at a predetermined speed while performing laser scanning relatively. As shown in Fig. 61, in the second laser light irradiation, the irradiation area is scanned by overlapping 30 in m each time. At this time, the area where the laser and laser light overlap and irradiate continuously is not consecutive. Although the unevenness of characteristics such as mobility occurs in the area, as shown in the figure, when the TFT is formed in a manner not related to the continuous area, if the continuous area is used for a wiring pattern, etc., the TFT characteristics and the like are changed. The work of reducing the deviation becomes easy. Also, in the irradiation of the second laser light, the direction of the linear beam is set to be parallel to each side of the substrate 155 (in the driving circuit portion region 155b in FIG. 60, The direction indicated by the solid line in 155c), if scanning in a direction perpendicular to each side, the total time required for irradiation can be shortened. Therefore, the base with the substrate 155 fixed on it is rotated by 90 degrees to perform Laser irradiation is appropriate (It is also possible to rotate the linear beam direction of the laser light by 90 °, but this method is generally difficult.) With the first laser light irradiation described above, the crystallization is performed in the image display area 155a. Necessary uniformity of semiconductor film characteristics On the other hand, by the second laser light irradiation, the Chinese national standard (CNS) A4 specification (2 丨 0X297 mm) can be applied to the paper size of the driving circuit. 108 Λ7 B7 Central Ministry of Economic Affairs Printed by Shelley Consumer Cooperative of the Bureau of Standards 5. The invention has obtained high electric field effect mobility in the area 155b, 155c of the invention description (106). That is, the inventors learned that when the laser light is irradiated under various irradiation conditions, When scanning irradiation is performed with an energy density of 300 mJ / cm2 or more, the continuous portion of each scanning irradiation area becomes prone to non-uniform electric field effect mobility. Therefore, as described above, in the image display area 115 & in which the in-plane uniformity is required in the characteristics of polycrystalline silicon, when the laser light is irradiated at an energy density of less than 300 mj / cm2, the area of the pixel area is larger than that of the pixel portion area. It is small and must have high electric field effect mobility and other characteristics in the driving circuit area 15 讣, 155c, by irradiating laser light with an energy density higher than 300 mJ / cm2, even if the uniformity of film characteristics cannot be obtained at the same time, As well as the improvement of characteristics, in the image display region 155a and the driving circuit portion regions 155b, 15 氕, it is still possible to meet the respective needs to form polycrystalline stone layers with different characteristics. (Embodiment 6-2) Other examples 0 of the thin film transistor applicable to a liquid crystal display device will be described below. In this example, the cross-sectional shape of the light beam when compared with the first laser light irradiation is the same as the foregoing embodiment. U is the same linearly, but when the second laser light is irradiated, the cross-sectional shape of the beam is different. The laser tempering device used in this embodiment is compared with the device of FIG. 9 'as shown in the figure, it is provided with a uniform uniform device that shapes the cross-sectional shape of the laser beam into a linear shape. A621 is different from the homogenizing device B622 shaped into a square (for example, 1 cm angle) to replace the homogenizing device 153. (The same components as those in FIG. 9 are denoted by the same reference numerals and descriptions thereof are omitted). Please read the notes on the back of this paper before filling in this page ') 袈. ----- Order ------ 109 _A7 B7 V. Description of the invention (107) Use the above laser tempering device First, as shown in Section 62 (a) (i), the uniformity device A621 is used to complete the entire surface of the substrate 155, or only the image display area 155a is borrowed in the form of an energy density of 280 mj / cm2 that can maintain uniformity. Laser tempering (scanning irradiation with linear laser light). Thereafter, as shown in FIG. 62 (b), 'the homogenization device B622 is used, and as shown in FIG. 63, each of the irradiation areas 63 1, 632 of the driving circuit portion areas 155b, 155c is irradiated with an energy density of 4〇〇mj / cm2 square laser light (scanning irradiation with square laser light). As described above, when the laser light is set to a square shape when the second laser light is irradiated, it is not necessary to perform the same as in the first embodiment. By turning the substrate 155 by 90 degrees, laser tempering of the drive circuit portion regions 155b and 155c can be performed. Therefore, not only can the polycrystalline silicon having different characteristics in the pixel portion region and the driving circuit portion region be produced in the same manner as in Embodiment 6-1, but also the simplification of the device and the manufacturing process can be easily completed. (Implementation Mode 6-3) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs The second laser light in the aforementioned Implementation Mode 6-2 may be irradiated multiple times. That is, similar to 6-2, when the second laser light is irradiated, the substrate 155 ′ is not moved, and as shown in FIG. 63, a square laser in the drive circuit portion regions 155 b and 155 c corresponds to the laser. For each of the irradiation areas 631 and 632 in the shape of the beam, it is also possible to perform stationary irradiation by fixing the irradiation position of the laser light. Each irradiation area 631 and 632 corresponds to, for example, a square with a laser light of 1. When the overlap is performed at about 30 / zm, the electric field effect mobility in the area where the laser light overlaps but is not irradiated can be greatly improved. At the same time, the paper size in the area can be reduced. Printed by the Shell Standard Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 407303 -A7 _____B7 5. The uniformity of the description of the invention (108) has been improved. Here, as described above, when the laser light has a high energy density, in regions where the laser light overlaps and is irradiated, and in regions other than this state, unevenness may occur in characteristics such as mobility, but In the driving circuit portion regions 15 5 b and 15 5 c, it is not necessary to have the same uniformity across the entire region as in the image display region 5 5 a. That is, the driving circuit portion is formed so that the semiconductor film scheme (TFT pattern) does not overlap at the continuous portion (laser beam end) of the laser exposure. It is also possible to use the continuous portion in a wiring pattern or the like. In other words, it is preferable to use only polycrystalline silicon with uniform characteristics for forming TFTs. In addition, even when the overlapping and irradiated areas are not used, the use efficiency of the driving circuit section areas 155b and 155c does not decrease much because the area is small. In addition, the laser light can be irradiated multiple times (for example, 30 times, etc.) to each of the irradiated areas 631 and 632 to further improve its characteristics. Here, the relationship between the number of stationary irradiations and the obtained polycrystalline silicon mobility is shown in Figure 64. It can be seen from the same figure that there is an appropriate range in the number of laser irradiations. More or less will cause reduced mobility. When the energy density of stationary irradiation is set to 4,000 mJ / cm2, a polycrystal having a high electric field effect mobility can be prepared by using irradiation times of 50 times or more, preferably 80 times to 400 times. Shi Xi. In addition, the improvement effect of the mobility of the electric field effect caused by the static irradiation of the laser light in the driving circuit area as described above, even when the linear laser light is used, the effect is higher than when the square laser light is used. Less, still can improve the effect "· (Implementation mode 6 ~ 4) This paper is suitable for financial standards (CNS) (21QX29.7 mm) ----------- ^- ------ 1 I (Please read the precautions on the back before filling this page) 111 ΛΊ B7 407303 V. Description of the invention (l09) The irradiation conditions of the laser light are not just the same as the above-mentioned implementation 6 The image display area 155a and the driving circuit portion areas 15 讣 and 155c of —1 to 6—3 are set to be different from each other, and further divided into a plurality of areas and set to be different from each other so as to be formed in the driving circuit portion area. Polycrystalline silicon with different characteristics is also preferred. That is, for example, when the second laser light in Embodiment 6-3 is irradiated, in the driving circuit portion regions 15 5b and 155c, an area having a flash lock (currently 7,000) and a transfer gate must be formed. It has a high degree of movement, so it is irradiated with a high energy density (for example, 400 mJ / cm2); the other part is to enlarge the irradiation area by expanding the uniformity and the beam obtained by reducing the interference and reducing the adjustment deviation. Productivity improvement is a priority, and irradiation can be performed under conditions of about 330 mJ / cm2. In addition, the same effect can be obtained even if the irradiation conditions are different depending on the irradiation conditions. (Implementation aspect 6-5) Further examples of the laser tempering device will be described. This laser device is compared with the installation and arrangement of FIG. 9, and as shown in FIG. 65, the laser device is attached to a point between the window 154 and the pedestal 156 provided with a mask member 641 having partially different transmittance of laser light. A little different. As shown in FIG. 66, the cover member 64H is formed by forming an attenuation region 64a corresponding to the image display region 155a of the substrate 155 and a transmission region 641b corresponding to the driving circuit portion regions 155b and 155c. Specifically, for example, the optical transmittance of the laser light is partially set to a predetermined size by partially covering the ND filter and the optical film such as the multilayer dielectric film on the quartz plate. The laser light irradiation energy density decreases. By using the laser tempering device as described above, for example, in order to be trimmed ~~ ————- --- This paper rule & ^^ Chinese national standard ((: 1 '«> 8 4 specifications (210/297 mm) " '-in I ί nn II nn nf I-! — I I-In 1! I—, one sOJ11 In ——I— I---I (Please read the note on the back first Please fill in this page for further details.) Printed by the Ministry of Economic Affairs, Central Bureau of Standards, Bureau of Consumption and Cooperation, DuPont 112 Α7 Β.7 V. Description of the Invention (110) Linear laser light is irradiated on the entire surface of the substrate. If the laser beam is mobilized or The mask member 64b and the base 156, and at the same time irradiate the entire substrate with an energy density of _, can perform laser tempering on the image display area 155a with an energy density of 28G ml / em2 in the same manner as in the aforementioned embodiment 6_i. Φ means that a semiconductor film having different characteristics can be simultaneously formed in the pixel portion and the driving circuit portion. In addition, the mask member 641 is not limited to be disposed by vacating between the window 154 and the substrate 155 as shown in FIG. 65. To make it adhere to the substrate 155 and-while improving the flatness of the laser light irradiation surface, and 641 and window 154 may be integrated; also, it is installed in the homogenization device 丨 53. In the case where the laser light intensity is not attenuated τ, the refractive light system is used to change the laser light intensity. The device can also be used. (Embodiment 6-6) The following is an example of a laser tempering device that can further improve the uniformity in the image display area. This laser device is shown in Figure 67 on the substrate A uniform optical element 651 is provided above 155 to scatter the incident laser beam. As a result, the phenomenon of non-uniformity in the amount of light caused by the diffraction of the laser beam shape is reduced, and because of the reflection from the substrate 155 The light returns to the laser oscillator to prevent the laser pulse from becoming unstable. Also, as shown in FIG. 68, the use of a composite type with a scattering region 652a and a mirror-processed transmission region 652b and the like is uniform. The optical element 652 can be obtained in order to obtain a region with high uniformity and a region with high crystallinity formed in the semiconductor layer at the same time. This paper mark scale is applicable to China National Standard (CNS) χ297 the public) (Please read the back of the precautions to fill out this page), Ministry of Economic Affairs Bureau of Standards 11 employees consumer cooperatives printed

113 A7 ______ ____ Β · 7 V. Description of the Invention (m) * " ~~~~-Furthermore, although the above-mentioned implementation modes can obtain the above-mentioned effects respectively, except that the limitation of the material makes it work. The constitutions of the various implementation aspects are combined to obtain the effects produced by their respective effects and the effects of multiplication. INDUSTRIAL APPLICABILITY The present invention can be implemented according to the aspects described above and produces the effects described below. That is, according to the present invention, it can be made larger in the field of making transistors. The polycrystalline silicon thin film with a large particle size can greatly improve the transistor characteristics such as electric field effect mobility. For example, in a liquid crystal display device, the effect is that a large-scale driving power can be built in. In addition, the use of oxidized oxycarbide thin film formed by adding oxygen to gasified stone can reduce the nitrogen content in the film and reduce its stress, making it possible to produce a more stable transistor. In addition, not only the crystal particle size and crystal orientation can be controlled, but also the interference between crystals during the crystal growth process can be prevented, and a sufficient crystal particle size can be made. In addition, according to the present invention, the timing of generating crystal nucleus in the peripheral portion becomes earlier than that of a known person, and as a result, crystal growth can be performed earlier than the conventional technique. Printed by the Ministry of Economic Affairs_Central Bureau of Standards Consumer Cooperatives (please read the notes on the back before filling this page). Furthermore, according to at least the channel area of the non-single-crystal semiconductor layer, the crystal growth direction is set to the source area and In the present invention, the crystal growth direction of the crystal region in the direction of the drain region controls the growth direction of the crystal and the like. Since the long and large-sized crystal grains are formed in the direction connecting the source region and the drain region, it is possible to Obtain a crystalline thin film transistor with a small intercrystalline density in this direction, and this crystalline thin film transistor has a superior paper size and good financial @ 81 家 标准 (CNS> A4_7210X297 male 4) 114 A7 & 7 __407303 V. Description of the invention (112) TFT characteristics such as good electric field effect dynamics. Also, by appropriately adjusting the intensity pattern of the light beam, the crystal sentence [the improvement of the degree of growth and crystallization can be achieved, so according to the present invention, 2 other circuits can be prevented from bringing about adverse effects, and can be used only on the substrate. A crystallized region β having a higher electric-field-effect mobility is formed on a limited specific portion. Therefore, for example, a pixel transistor and a drive that requires even two hundred times more mobility than the driving circuit can be integrally formed. Same-on-substrate β In addition, since the CPU and the like can be integratedly formed on the same substrate, according to the present invention, it is possible to obtain so-called AM which can provide two performances and a low degree of accumulation at a low cost of Jagger- Excellent effect of LCD. Furthermore, by irradiating at least two kinds of energy beams with different absorptivity of the precursor semiconductor film, the precursor semiconductor film is heated while passing through its thickness direction, so the precursor semiconductor film is slowly cooled. 'One side crystallized. Therefore, crystal growth is promoted to form relatively large crystal grains, and at the same time, crystal defects are reduced, thereby achieving the effect of improving the electrical characteristics of the semiconductor film. Furthermore, a plurality of regions having different characteristics and regions having high characteristics of the semiconductor film and regions having high uniformity of characteristics can be formed within the substrate surface; and, for example, a liquid crystal in which a peripheral driving circuit is incorporated can be formed. In the thin film transistor array for a board, the high characteristics necessary for the circuit portion and the horse uniformity necessary for the pixel portion can be achieved. This paper size applies to China National Standard (CNS) A4 (210 X 29.7 mm)-. I! III--I II · I--I-I--I-I-1 --- Γ I ---^^ 1 I --- (Please read the notes on the back before filling out this page} Printed by the Staff Consumer Cooperative of the Central Bureau of Standards, Ministry of Economic Affairs 115

Claims (1)

. A semi-conductor «film manufacturing method, which includes u -1-D—-I—.-I-, __. (Please read the precautions on the back before writing this page} An i-th insulating film having a first thermal conductivity and a second insulating film having a second thermal conductivity different from the above-mentioned first thermal conductivity and selectively formed on a partial area, and a step of laminating; 1 a step of laminating a non-single-crystal semiconductor thin film on an insulating film and a second insulating film; and a step of irradiating an energy beam onto the non-single-crystal semiconductor thin film to grow crystals. The method for manufacturing a thin film is characterized in that the second insulating film is laminated on the substrate, and then the second insulating film is laminated, and the second thermal conductivity is set to be lower than the first thermal conductivity. The second half of the scope of the patent. A method for manufacturing a conductive film, characterized in that the first insulating film is composed of any one of a nitride compound and a oxynitride, and the Central Bureau of Standards of the Ministry of Economic Affairs The consumer ’s consumer cooperation du printed the above-mentioned second insulating film, which is composed of a silicon oxide compound. 4. A method for manufacturing a semiconductor device, which is characterized by including a first insulating film having a first thermal conductivity on a substrate, The step of having a second thermal conductivity different from the first thermal conductivity described above and selectively being laminated by a second insulating film formed on a part of the area; and this paper scale applies the China National Standards (CNS) Regulation 8 " Grid (210X297 mm) 116 A8 B8 C8 D8 · The process of printing and applying for a patent covering the above-mentioned first and second insulating films by the Central Standards Bureau of the Ministry of Economic Affairs, and the step of laminating non-single-crystal semiconductors; and A step of irradiating an energy beam on the non-single-crystal semiconductor film to grow a crystal; and used in the semiconductor film grown by the crystal described above, corresponding to heat conduction between the first insulating film and the second insulating film The step of forming the semiconductor element in the region of one of the leading parties. 5. If the method of manufacturing a semiconductor element according to item 4 of the patent application scope is characterized by In the above-mentioned crystal-grown semiconductor film, the region corresponding to the low thermal conductivity of the first insulating film and the second insulating film is removed, and the remaining region is used to form a semiconductor element. The method of manufacturing a semiconductor device according to item 4, characterized in that, after the first insulating film is laminated on the substrate, the second insulating film is further laminated, and the second thermal conductivity is set to be lower than the first thermal conductivity. 7. The method for manufacturing a semiconductor device according to item 6 of the scope of the patent application, characterized in that 'the first insulating film is composed of any one of a silicon nitride compound and a silicon oxynitride compound, and the second insulation is The film is composed of a silicon oxide compound. This paper size applies to the Chinese National Standard (CNS), 8 and 4 cases (210X297 cm)-IH — ^^ 1 J— 1 ^ 1 I— I 1:-i IT------ —-I ^ (Please (Read the precautions on the back before you write this page.) 117 B8 C8 8. The method for manufacturing a semiconductor device according to item 4 of the patent application, which is printed by the Central Standard Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. The second insulating film is selectively formed on a patterned area. … 9. The method for manufacturing a semiconductor device according to item 8 of the scope of the patent application, characterized in that the above-mentioned energy beam is irradiated while scanning in the stripe pattern of the second insulating film in the longitudinal direction, and at the same time, The scanning direction is substantially the same as the direction of the current path to form the semiconductor element. 10. A semiconductor device comprising a substrate, a second insulating film having a first thermal conductivity laminated on the substrate, and a second thermal conductivity different from the first thermal conductivity. A second insulating film formed on a part of the ground, and a semiconductor film formed by crystal growth by irradiating a non-single-crystal semiconductor film laminated on the first insulating film and the second insulating film with energy beams In the semiconductor thin film grown by the crystal, a region corresponding to a high thermal conductivity of the first insulating film and the second insulating film is provided in the current path. 11. For example, the semiconductor element under the scope of application for patent No. 10 is characterized by having the above-mentioned areas in the above-mentioned semiconductor film formed by crystal growth; this paper size is applicable to China National Standard (CNS) A4 (210X297) Li) I .------- ^ ------ Order ------- it (Please read the notes on the back before writing this page) 118 407303 The policy of ABCD, Central Bureau of Standards, Ministry of Economic Affairs, Shellfish Consumer Cooperatives, etc. The above-mentioned regions are set in parallel in the current paths through which current flows. 12. A semiconductor secret is a non-single-crystal semiconducting holmium film grown by irradiating an energy beam, and is characterized in that a peripheral portion of the semiconductor thin film is formed in the same plane as the semiconductor thin film. Protrusions extending along the outer side 13. For example, the semiconducting Zhao thin film in the scope of patent application No. 12 is characterized in that the protrusions are formed into a crystal nucleus when the crystals are grown by irradiation of the energy beam. The resulting size. 14. The semiconductor thin film according to item 13 of the application, characterized in that the protrusions are formed so that the protruding length in the protruding direction is equal to or greater than the film thickness of the semiconductor thin film, and is also below. 15. The semiconductor thin film of claim 13 is characterized in that the protrusions are formed so that the width in the width direction perpendicular to the protruding direction is longer than the film thickness of the semiconductor thin film and less than 3 μm. 16. For example, the semiconductor thin film of claim 12 is characterized in that the semiconductor thin film is formed to have a shape of a pair of opposite sides; a plurality of the above-mentioned protrusions are respectively formed on the opposite sides and are simultaneously formed The interval between the protrusions adjacent to each other is set to be substantially equal to the interval between the opposite sides. This paper size applies to Chinese National Standard (CNS) A4 specifications (210 ×: 297 males; f)! 1 k pack -------- order ------ line (please read the note on the back before filling this page) ) 119 A8 B8 C8 D8 6. Scope of patent application. -Semiconductor Zhao element, which is characterized by a semiconductor thin film formed by irradiating a non-single-crystal + conductor film with an energy beam to perform crystal growth. Please read first. A peripheral portion of the film is formed with a protruding portion extending along the outside in the same plane as the above-mentioned semiconductor film. 18. The semiconductor device according to item 17 of the patent application scope is characterized in that a film having a semiconductor film as described above is formed. The formed thin film transistors of the source region, the gate region, and the drain region are formed with the protrusions at least on a peripheral edge portion of the intermediate electrode region. 19. A method for manufacturing a semiconductor thin film, comprising a non-single-crystal semiconductor having a non-single-crystal semiconductor thin film formed on a substrate and having protrusions extending outwardly in the same plane as the non-single-crystal semiconductor thin film. A step of forming a thin film, and a step of growing the non-single-crystal semiconductor thin film by irradiating it with an energy beam; Line 20. The method for manufacturing a semiconductor thin film according to item 19 of the application, wherein the energy beam includes at least any one of laser light, electron beam, and ion beam. 21. The method for manufacturing a semiconductor thin film according to claim 20, wherein the energy beam includes excimer laser light. 22. A method for manufacturing a semiconductor thin film by tempering to crystallize a non-single-crystal semiconductor thin film, characterized in that the crystalline core of the peripheral portion of the non-single-crystal semiconductor thin film is more than the Chinese national standard (CNS) ) A4 size (21 ×: 297 mm) ABCD Central Ministry of Economic Affairs, Central Bureau of Work, Consumer Affairs Cooperatives, Printed Central = The fraction of crystal nucleus was generated in an earlier period, and then the aforementioned crystal nucleus produced in the aforementioned peripheral part was generated at the conclusion of the aforementioned central part. Alternatively, before crystal growth, crystal growth is performed toward the central portion. Ba 23. The method for manufacturing a semiconductor thin film according to item 22 of the scope of patent application, characterized in that in the tempered semiconductor thin film, the peripheral portion is cooled earlier than the central portion, so that The crystal nucleus of the peripheral part is produced at an earlier period than the crystal nucleus of the central part. 24. For example, the method for manufacturing a semiconductor thin film in the scope of patent application No. 23 is characterized in that the "peripheral part includes a peripheral edge having a slightly protruding shape; The heat generated and accumulated in part by the tempering treatment has a plurality of directions of dissipation in the direction parallel to the surface of the semiconductive ship film, so that the peripheral portion is cooled earlier than the central portion. 25. A semiconductor element, characterized in that it is a semiconductor element having a semiconducting thin film formed by crystallizing a non-single B semiconductor film by tempering, and having a peripheral portion of the non-single-crystal semiconductor film. The crystal nucleus is generated earlier than the crystal shuttle in the central part. After that, before the crystal nucleus in the central part is generated or the crystal is grown, the Shao + central part is used for crystal growth. Into a semiconductor film. 26. A semiconductor device, characterized in that the paper size of the source region and the drain region arranged on both sides of the aforementioned channel region with a channel region is applicable to the Chinese National Standard (CNS) A4 standard (2Ϊ " 〇χ297mm) 1 „Install ------ Order ------ line (please read the precautions on the back first and then write this page) 121 The front seal of the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A8 B8 C8 D Patent application scope A crystalline semiconductor layer is formed in a semiconductor element formed on a substrate. The crystalline semiconductor layer is formed by crystallizing a non-single crystalline thin film. At least the channel region is provided with a crystal growth direction control void that controls the crystal growth direction. 27. The semiconductor device according to item 26 of the patent application scope, wherein the aforementioned crystal growth direction control void is connected to the source region and In the direction of the drain region, more than two rows of groove-shaped voids are provided. 28. For a semiconductor device with a scope of patent application No. 26, it is characterized in that A plurality of crystal-growth-direction-controlling voids are provided in succession in a direction connecting the source region and the drain region. 29. A semiconductor device characterized by having a channel region and being disposed in the channel region. In the semiconductor device in which the source region on the side and the crystalline semiconductor layer in the drain region are formed on a substrate, the crystalline semiconductor layer is formed by crystallizing a non-single-crystalline film; at least in the channel region. In the semiconductor device, an early crystallization area having a higher crystallization start temperature than the channel area body portion is provided. 30. The semiconductor device according to item 29 of the patent application scope is characterized in that the early crystallization areas are connected along The source region and the drain region are elongated. 31. For the semiconductor device with the scope of patent application No. 29, it is characterized in that the good paper button applies the Chinese National Standard (CNS) to threaten (2 丨 〇 &gt); < 297 Public Fantasy 1 _ ^ --- Γ ----- ^ ------ ΐτ ------. ^-(Please read the notes on the back before writing this page) 122 Economy Ministry of the Central Government Provincial Government Procurement Bureau Printed A8 B8 C8 ___ D8 · ~, Application patent scope 1 ~~-The structure of the early crystallization area in the channel area body contains eight impurities. 77 32. If you apply for a special body element , Characterized in that the aforementioned crystalline semiconducting Zhao layer is based on Shi Xi, or Shi Xi and Cu as the main component. 33. A method for manufacturing a semiconductor device is arranged in a region having a channel and disposed in the channel region. In the method for manufacturing a semiconductor element in which a source region on the side and a crystalline semiconductor layer in a drain region are formed on a substrate, the method includes at least a step of depositing a non-single-crystalline film on an insulating substrate; A step of forming a crystal growth direction controlling void on a crystalline thin film; and a step of irradiating energy and a light beam on a non-single-crystalline semiconductor film having a crystal growth direction controlling void to crystallize the thin film. 34. The method for manufacturing a semiconductor device, as described in item 33 of the scope of patent application, is characterized in that 'the aforementioned crystal growth direction is controlled to form a groove in a direction connecting the source region and the pole region to form a groove shape. The method for manufacturing a semiconductor device according to item 33, wherein a plurality of the crystal growth direction control gaps are discontinuously formed in a direction connecting the source region and the drain region. 36. A method for manufacturing a semiconductor device, the method for manufacturing a semiconductor device comprising a channel region and a crystalline semiconductor layer having a source region and a drain region arranged on both sides of the channel region, is formed at least: This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) | _Ί ------- installation ------ ΐτ ------, ii (Please read the note on the back first Please fill in this page again for details) 123 407303 A8 68 C8 m Printed patent application steps for depositing non-single-crystalline films on insulating substrates; A part of the implanted ions is an impurity for increasing the crystallization start temperature of the part to form an early crystallization region forming step including an early crystallization region including the impurity; and after the foregoing early crystallization region forming step, irradiating an energy beam to perform The crystallization step of the thin film. 37. The method of manufacturing a semiconductor device according to claim 36, characterized in that, in the step of forming the early crystallization region, an early stage of forming a long band shape in a direction connecting the source region and the drain region is formed. "Crystalline region" 3 8. The method for manufacturing a semiconductor device according to claim 36, wherein the early crystallization region is discontinuously arranged in a direction connecting the source region and the drain region. 39. The method for manufacturing a semiconductor device according to claim 33, wherein the energy beam is an excimer laser beam. 40. A method of manufacturing a semiconductor thin film, characterized in that the non-single-crystal material is crystallized or recrystallized by irradiating a light beam on the thin-film made of the non-single-crystal material formed on a substrate, In the manufacturing method of a semiconductor thin film that forms a crystalline semiconductor hafnium film, the above-mentioned light beam is used to form a non-uniform temperature gradient or temperature distribution on the surface of the thin film on the irradiated surface to adjust its light energy intensity. The light beams are distributed in a pattern, and the light beams are irradiated in a stationary state. Please read the note of ι6 first and then bind it. 124 Printing by the Central Ministry of Economic Affairs, Central Bureau of Work, Consumer Cooperatives, A8, B8, G8 __ D8. VI. Scope of Patent Application 41. For the manufacturing method of semiconductor thin film, No. 40 of the scope of patent application, It is characterized in that the aforementioned distribution pattern of the light energy intensity is a distribution pattern in which the light intensity in the range of light intensity is monotonically increased from one side to the other, or monotonically decreased from the other side to the other side. The method for manufacturing a semiconductor thin film is characterized in that the aforementioned distribution pattern of light energy intensity is within the range of the light beam, and its relatively strong light intensity part and relatively weak light intensity part are arranged alternately in a plane. Distribution pattern. 43. The method for manufacturing a semiconductor thin film according to item 42 of the application, characterized in that the aforementioned distribution pattern of light energy intensity is formed by irradiating at least two mutually coherent lights at the same time so as to cause light interference. 44. The method for manufacturing a semiconductor thin film according to item 42 of the application, wherein the distribution pattern of the aforementioned light energy intensity is irradiated with at least two mutually coherent lights at the same time, and the light of at least one of the aforementioned lights is irradiated simultaneously. The phase is dynamically modulated to form a fluctuating interference pattern. 45. A method for manufacturing a semiconductor thin film, characterized in that a light beam is irradiated onto a thin film made of a non-single-crystal material formed on a substrate, and then the heat is radiated to crystallize the aforementioned non-single-crystal material or In the method for manufacturing a recrystallized crystalline semiconductor film, the other manufacturing method is to maintain a non-uniform temperature distribution on the film surface irradiated by a light beam by maintaining the atmospheric pressure of the environment at a threshold value or more. 46. For the method of manufacturing thin semiconductor wafers under the scope of application for patent No. 45, when the atmospheric gas is hydrogen, the atmospheric pressure above the above-mentioned value is 10. This paper standard is applicable to Chinese National Standard (CNS) A4 ^ JL # ( 210X297i ^ f)-^ -------- ^-installation ------ order ------ record (please read the precautions on the back before writing this page) 125 A8 B8 C% D8 · 407303 6. The scope of patent application is above 5 torr. 47_ A semiconductor-like manufacturing method that hides at least one of the precursor semiconductor films formed on a substrate and irradiates the precursor semiconductor films with at least the first energy that can crystallize the precursor semiconductor films. The energy beam is smaller than the absorption rate of the front medium semiconductor film of the first energy beam, and the energy given to the precursor semiconductor film is also the second smaller than the energy that can crystallize the precursor semiconductor film. The step of crystallization of the precursor semiconductor film by the energy beam. 48_ The method for manufacturing a semiconductor film according to item 47 of the patent application, wherein the precursor semiconductor film is an amorphous silicon thin film. 49. The method for manufacturing a semiconductor film according to item 47 of the scope of patent application, wherein the absorption coefficient of the precursor semiconductor film of the first energy beam is substantially more than the inverse of the film thickness of the precursor semiconductor film; The absorption coefficient of the precursor semiconductor film of the second energy beam is substantially equal to or less than the reciprocal of the thickness of the precursor semiconductor film. 50. The method for manufacturing a semiconductor film according to item 47 of the patent application scope is characterized in that: 1 above the energy beam .. The absorption coefficient of the precursor semiconductor film is approximately 10 times or more the reciprocal of the film thickness of the precursor semiconductor film; the absorption of the precursor semiconductor film of the second energy beam is the size of the paper Applicable to the National Standard of China (CNS) 8-4 (210X297 mm) (Please read the note on the back before filling out this page)-Binding Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, 126 A8 B8 C8 D8 * 407303 6. The number of patent applications is approximately the reciprocal of the film thickness of the aforementioned precursor semiconductor film. 51. The method for manufacturing a semiconductor film according to claim 47, wherein the first energy beam and the second energy beam are light with different wavelengths. 52. If the method for manufacturing a semiconductor film according to item 5 of the patent application is based on the above-mentioned first energy beam. The beam is a single-wavelength energy beam. At the same time, the second energy beam includes at least a wavelength component in the visible light region. . 53. If the method for manufacturing a semiconductor film according to item 52 of the patent application is based on the above-mentioned first energy beam as a laser light, and the second energy beam as an infrared lamp as a feature. 54. If the method for manufacturing a semiconductor film according to item 52 of the patent application is characterized by the above-mentioned first energy beam as laser light, and the above-mentioned second energy beam as white heat light. 55. If the method for manufacturing a semiconductor film according to item 52 of the patent application is characterized by using the first energy beam as the laser light and the second energy beam as the excimer laser light as its feature "56. The method for manufacturing a semiconductor film according to item 51, wherein the second energy beam includes at least a wavelength component from a visible light region to an ultraviolet light region. 57. The method for manufacturing a semiconductor film according to item 56 of the patent application, wherein the first energy beam is a laser beam, and the second energy beam is a xenon flash lamp. 58. If the method for manufacturing a semiconductor film according to item 51 of the patent application scope is based on the above-mentioned first energy beam and second energy beam being laser light, it is special --.-------- ^ --- --- ίτ ------ ^ (Please read the notes on the back first and then write this page) 127 A8 B8 C8 D8- The scope of patent application is levied. 59. The method for manufacturing a semiconductor film according to item 58 of the scope of patent application, wherein the precursor semiconductor film is an amorphous silicon thin film; the first energy beam is an argon fluoride excimer laser and a fluorinated excimer laser. Xenon excimer laser, or any kind of laser light of xenon fluoride excimer laser; the above-mentioned second energy beam is laser light of argon laser. 60. The method for manufacturing a semiconductor film according to item 58 of the scope of patent application, characterized in that the substrate is a glass substrate; the precursor semiconductor film is an amorphous silicon thin film; and the lab-type light beam is an argon-fluorine excimer laser. , Gas de excimer laser, xenon excimer laser, or any kind of laser light of xenon-fluorine excimer laser; the above-mentioned second energy beam is the laser light of carbon dioxide gas laser, please read Note Λ first. Binding Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 61. If the method of manufacturing a semiconductor film under the scope of patent application No. 47 is the first energy beam and the second energy beam is a band irradiated on the semiconductor film Shaped area is its characteristic. 62. If the method for manufacturing a semiconductor film according to item 47 of the patent application is based on the projected area of the second semiconductor light beam toward the precursor semiconductor film, it is greater than the direction of the old light beam. The above-mentioned precursor semiconducting Zhao film has a large irradiation area, and contains the above-mentioned collimated beam in G-scale scales, suitable for Guanjia County (CNS) (21 ^ 297) 128 A8 B8 C8 D8 · Central Bureau of Standards, Ministry of Economy The consumer product cooperative prints the irradiation area of the patent application scope, which is characterized by β 63. For the semiconductor film manufacturing method of the 47th scope of the patent application, the first energy beam and the second energy beam are roughly the same. The above-mentioned precursor semiconductor film is irradiated in a perpendicular incidence manner as a feature. 64. For a method for manufacturing a semiconductor film under the scope of application for item 47, the above-mentioned second energy beam is at least smaller than the 65. The method of manufacturing a semiconductor film according to item 64 of the patent application scope is characterized in that the base is formed with the above-mentioned precursor semiconductor film. While the board is moving, the second energy beam is irradiated on the side of the front side of the moving direction more than the irradiation position of the first energy beam on the precursor semiconductor film. 66. If applied The method for manufacturing a semiconductor film according to item 47 of the patent is that the first energy beam is intermittently irradiated; on the other hand, the second energy beam is characterized by continuous irradiation. The method for manufacturing a semiconductor film according to item 66 of the application, wherein the first energy beam is laser light with pulse oscillation; on the other hand, the second energy beam is laser light with continuous oscillation. The method for manufacturing a semiconductor film according to item 66, characterized in that the first energy beam is a laser light with pulse oscillation; (Note 4 Write this page again) 129- Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs The above-mentioned second energy beam is a light. 69. The method for manufacturing a semiconductor film according to claim 47, wherein the first energy beam and the second energy beam are intermittently irradiated with each other at the same time. 70. The method for manufacturing a semiconductor film according to item 69 of the application, characterized in that the period during which the first energy beam is irradiated is within the period during which the second energy beam is irradiated, and the second energy beam is irradiated Period of less than two thirds of the irradiation period. 71. For example, the method for manufacturing a semiconductor film according to item 69 of the patent application is characterized by the laser light pulsed by the first energy beam and the second energy beam described above. 72. For example, the method for manufacturing a semiconductor film according to item 69 of the application, characterized in that the first energy beam is a laser light with pulsed pulses; in addition, the second energy beam is an intermittent point. Light of the lamp. 73. The method for manufacturing a semiconductor film according to item 47 of the patent application, characterized in that the first energy beam and the second energy beam are such that the precursor semiconductor film can be heated to a temperature of 300 to 1,200 ° C. Irradiated by the following temperature method: 74. For example, the method for manufacturing a semiconductor film according to item 47 of the patent application, wherein the first energy beam and the second energy beam are for heating the precursor semiconductor film. To a temperature above 600 ° C and below 1100 ° C I This paper is from Shicai Guanjiaguan (CNS) A4 · (210X297 mm) Please read Note 1 ¾ Gutter 130 Central Bureau of Standards, Ministry of Economic Affairs Printed by the cooperative 407303 I D8. VI. Applicants who are exposed in the manner of patent scope. 75. The method for manufacturing a semiconductor film according to claim 47, further comprising the step of heating the substrate on which the above-mentioned precursor semiconductor film is formed by a heat source. 76_ The method for manufacturing a semiconductor film according to claim 75, wherein the substrate on which the precursor semiconductor film is formed is heated to a temperature of 300 ° C or higher and 600. 〇The following temperature. 77. The method for manufacturing a semiconductor film according to item 47 of the application, wherein the first energy beam is irradiated to a plurality of regions in the precursor semiconductor film, and the second energy beam is irradiated only This is just a part of the above areas. 78_ The method for manufacturing a semiconductor film according to item 47 of the patent application, wherein the absorption rate of the second energy beam on the substrate is greater than that of the precursor semiconductor film. 79. The method for manufacturing a semiconductor film according to item 78 of the scope of patent application, wherein the absorption coefficient of the precursor semiconductor film of the first energy beam is approximately 10, which is the inverse of the film thickness of the precursor semiconductor film. Times more. 80. The method for manufacturing a semiconductor film according to item 78 of the patent application, characterized in that the substrate is a glass substrate; the precursor semiconductor film is an amorphous silicon thin film; and the scale standard is applicable to China National Standards (CNS) A4 specifications (2 丨 〇 > < 297 feet) m "-I--H —1 Is IIII — ^^ 1 I (Please read the precautions on the back before writing the page 4) * 1T 131 8 0〇00〇 " ΑΒαί: 6. Scope of patent application 'The above first energy beam is argon fluoride excimer laser, krypton fluoride excimer laser, krypton excimer laser, or thorium fluoride excimer laser. Any of the laser light; the above-mentioned second energy beam is the laser light of a carbon dioxide gas laser. 81. A semiconductor film manufacturing apparatus characterized by including a first irradiation means for irradiating the first energy beam; and an irradiation ratio The second irradiation means of the second energy beam having a small absorption rate of the precursor semiconductor film of the first energy beam. 82. The device for manufacturing a semiconductor film according to item 81 of the patent application, wherein the second irradiation means is a lamp that emits a second energy beam radially; and further includes a device for condensing the second energy beam. Concave mirror 〇83. The device for manufacturing a semiconductor film according to item 81 of the patent application, further comprising: reflecting one of the first energy beam and the second energy beam on one side and causing the other A reflective plate which is penetrated by the person; and is configured by making one of the first energy beam group and the second energy beam substantially perpendicularly incident on the precursor semiconductor film. 84. If the device for manufacturing a semiconductor film according to item 81 of the patent application is' characterized in that this paper size adopts China National Standard (CNS) ΑΊ specifications (210 × 297 mm) ---- ^ ------ -Install-(Please read the precautions on the back before 4-writing this page) Order Printed by the Central Procurement Bureau of the Ministry of Economic Affairs and Consumer Cooperatives Du AB 132 ABCD Printed by the Central Procurement Bureau of the Ministry of Economic Affairs and Consumer Cooperatives The precursor semiconductor film is an amorphous silicon thin film; the first irradiation means is argon-fluorine excimer laser, krypton-fluorine excimer laser, xenon excimer laser, or any one of xenon-fluorine excimer lasers. At the same time, the second irradiation means is laser light of argon laser. 85. The device for manufacturing a semiconductor film according to item 81 of the application, characterized in that the substrate is a glass substrate; the precursor semiconductor film is an amorphous stone: a thin film; and the first energy beam is an argon-fluorine excimer laser. Xenon excimer laser, xenon excimer laser, or any one of xenon fluoride excimer lasers; at the same time, the above-mentioned second energy beam is a laser light of a carbon dioxide gas laser. 86. a semiconductor The thin film manufacturing method is characterized in that it is a semiconductor thin film having a step of irradiating a moon beam onto a non-single-crystal semiconductor thin film formed on a substrate including a screen display region and a driving circuit portion region to grow a crystal. Manufacturing method, and the first irradiation system that irradiates the daytime display area uses a beam of energy whose cross-sectional shape is linear; on the other hand, the second irradiation system that irradiates the drive circuit portion region uses a light beam The cross-sectional shape of is a square energy beam, and is performed at an energy density that is higher than that of the first irradiation. 87. A method for manufacturing a semiconductor thin film, characterized in that it has an I package -------- order ------ line (please read the precautions on the back before writing this page) 133 Economy Printed by the Central Bureau of Standards, Shellfish Consumer Cooperative, A8 407303 | VI. Patent Application Range Irradiates energy beams onto non-single-crystal semiconductor films formed on a substrate that includes a screen display area and a drive circuit area to grow crystals In the method for manufacturing a semiconducting holmium thin film, the first irradiation system that irradiates the screen display area relatively scans the energy beam on the substrate, while staggering the irradiation areas of the energy beam by a predetermined overlap, and irradiating Scanning irradiation; On the other hand, the second irradiation to the driving circuit portion area is a stationary irradiation with the energy beam fixed to the substrate, and a higher energy density than the first irradiation. Proceeder. 88. The method for manufacturing a semiconductor thin film according to claim 87, wherein the second irradiation is performed a plurality of times while the energy of the substrate is relatively fixed. 89 · —A method for manufacturing a semiconductor thin film, which is a semiconductor thin film having a step of irradiating an energy beam onto a non-single-crystal semiconductor thin film formed on a substrate including a screen display region and a driving circuit portion region to grow a crystal. The manufacturing method is characterized in that the screen display area and a predetermined plurality of areas in the drive circuit portion area are respectively different in energy density, and the circuit is moved compared to the daytime display area. One side of the area is doubled at a higher energy density; ^ raise: the beam of light. 90. The method for manufacturing a semiconducting device according to claim 89, wherein at least one of the latch circuit and the shift register is irradiated to each of the above-mentioned areas of the driving circuit portion area. The formation of j ¾ ------ order ------. ^ (Please read the precautions on the back before painting this page) A8 R8 C8 D8 · 407303 VI. Scope of patent application The irradiation of the energy beam in the area with the transfer gate is performed at a higher energy density than that in other areas. 9L-Semiconductor thin film manufacturing method, characterized in that it is a step of irradiating an energy beam onto a non-single-crystal semiconductor thin film formed on a substrate including a screen display area and a drive circuit portion area to grow a crystal Method for manufacturing a semiconductor thin film, the corresponding area of the screen display area is higher than the corresponding area of the upper road area, and simultaneously passes through the energy beam having a low transmittance 遽 n to simultaneously display the area and the screen. Irradiation of an energy beam in the area of the box circuit. 92. A method of manufacturing a semiconductor thin film, characterized in that it is a method of manufacturing a semiconductor thin film having a step of irradiating a beam of light on a non-single-crystal semiconductor film formed on a substrate to grow a crystal, and The energy beam is irradiated through a uniformizing element having energy beam scattering properties. 93. The method for manufacturing a semiconductor thin film according to item 92 of the application, wherein the homogenizing element has a partially energy-permeable region so that an energy beam incident on the above-mentioned region has the same Through 'and irradiates the above non-single-crystal semiconductor thin film β 94. A semiconductor thin film manufacturing device, characterized by having an energy beam generating means, which conforms to the Chinese National Standard (CNS) Α4 standard (210 × 297 mm) for this paper size : Install-order ------ line (please read the precautions on the back before writing this page) Printed by the Central Consumers Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperative 135 Printed by the Consumer Standards of the Central Standards Bureau of the Ministry of Economic Affairs A8 B8 C3 D8- The scope of the patent application is to uniformize the energy beam generated by the above-mentioned energy beam generating means into a predetermined beam cross-sectional shape with uniform energy; the non-formed energy beam is irradiated onto the substrate. Manufacturing device for semiconductor thin film of single crystal semiconducting thin film to grow crystal ridge; further provided with the above-mentioned differences Filter amount beam transmittance of a region, 'on the plurality of regions of non-single crystal semiconductor film, an energy density of the above-mentioned mutually different energy beam is irradiated via the above-described embodiment the filter is configured. 95. The device for manufacturing a semiconductor thin film according to item 94 of the patent application, characterized in that the above-mentioned filter is configured by an optical film to have regions having different transmittances of the energy beams. 96. For example, the semiconductor thin film manufacturing device of claim 94, further comprising a processing chamber in which the substrate is placed, and configured to be irradiated with the energy beam through a window formed in the processing chamber; Moreover, the filter system is installed on the window. 97. A device for manufacturing a semiconductor film, comprising a means for generating energy beams and a means for uniformizing a predetermined cross-sectional shape of a beam having uniform energy with the energy beams generated by the energy i-beam generating means; The above-mentioned shaped energy beam is irradiated to the non-single aa semiconductor thin film formed on the substrate to make the crystal grow semiconductor film. The paper size is based on China National Standard (CNS) A4 (210X297 mm) --- ------- ^ ------ 1T ------ ii (Please read the notes on the back of the product before writing 4 · This page) 136 A8 B8 C-8 -4㈣ Ο 3- -6. Applicable patent range device; the above-mentioned homogenization means is constituted in such a manner that energy beams can be selectively converted and shaped into a plurality of beam cross-sectional shapes. (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Central Standardization Bureau of the Ministry of Economic Affairs This paper size applies to China National Standard (CNS) ΑΊ specifications (210 × 297 mm) 137