TW404876B - Process for chemical-mechanical planarization and equipment for performing said process - Google Patents

Process for chemical-mechanical planarization and equipment for performing said process Download PDF

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Publication number
TW404876B
TW404876B TW87115836A TW87115836A TW404876B TW 404876 B TW404876 B TW 404876B TW 87115836 A TW87115836 A TW 87115836A TW 87115836 A TW87115836 A TW 87115836A TW 404876 B TW404876 B TW 404876B
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Taiwan
Prior art keywords
abrasive
frequency
sound waves
frequency sound
mega
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TW87115836A
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Chinese (zh)
Inventor
Germar Schneider
Catharina Pusch
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Siemens Ag
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Publication of TW404876B publication Critical patent/TW404876B/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B24B1/04Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes subjecting the grinding or polishing tools, the abrading or polishing medium or work to vibration, e.g. grinding with ultrasonic frequency

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)

Abstract

This invention relates to a process of chemical-mechanical polishing, the polishing medium is fed between a to-be-planarized substrate and a grinding disk moving relatively against said substrate, the polishing medium comprises a solution and the polishing grains suspended in said solution. According to this process, it is characterized by conducting high frequency sonic-, ultrasonic- or megasonic waves into the polishing medium. This invention relates also to an equipment for performing the process, with a holder for the to-be-planarized and an other holder for the grinding disk, as well as a feed for polishing medium. This equipment is characterized in that it has one or more feed-equipments for high frequency sonic-, ultrasonic- or megasonic waves.

Description

A7 401876 Μ泌部中次桴卑^U.T.消於Α»竹社印鉍 五、發明説明( t ) 1 1 本 發 明 關 偽 一 種 化 學 — 機 械 式 的 研 磨 ί 其 間 在 -一 待 整 1 1 平 的 基 質 的 — 相 對 於 基 質 而 運 動 之 磨 碟 之 間 加 入 磨 料 > 1 1 其 % 由 —- 溶 液 和 懸 浮 於 溶 液 中 之 磨 粒 所 組 成 〇 請 先 本 發 明 另 關 傷 於 —* 種 裝 置 用 於 進 / — 該 方 法 J 具 有 ~* 閱 讀 背 ί6 1 用 於 待 整 平 的 基 質 的 夾 具 > 和 一 用 於 磨 碟 的 夾 具 , 以 及 1 之 1 用 於 磨 料 的 進 料 Π 〇 意 1 I 化 學 — 機 械 式 研 磨 是 一 種 整 平 方 法 多 方 面 應 用 於 整 事 項 再 I ! 値 半 導 am m 工 業 〇 其 進 行 方 式 通 常 在 待 整 平 之 基 質 上 方 設 填 本 裝 置 __. 旋 轉 的 磨 碟 > 作 同 方 向 或 反 向 旋 轉 〇 待 加 工 之 基 頁 V_-· 1 I 質 被 m 抵 於 磨 碟 上 〇 在 研 磨 程 序 之 中 或 之 前 以 有 磨 粒 懸 1 1 浮 於 其 内 之 磨 料 施 加 於 磨 碟 上 〇 磨 料 滿 足 兩 項 不 同 的 功 1 1 能 其 一 是 將 磨 料 中 所 含 活 性 化 學 添 加 物 加 於 待 整 平 之 1 訂 基 質 而 作 化 學 侵 蝕 另 一 功 能 則 藉 由 比 待 整 平 基 質 被 硬 1 之 磨 粒 在 表 面 對 基 質 産 生 機 械 性 磨 蝕 〇 ! ^1 為 使 磨 J/JU 在 溶 液 中 均 勻 混 合 5 在 磨 料 被 加 入 之 前 予 以 1 I m 底 m 伴 〇 1 為 了 避 免 在 整 平 程 序 當 中 磨 粒 有 沉 降 行 為 5 已 知 在 整 ..*· | 平 程 序 中 循 環 泵 打 磨 料 〇 其 間 若 有 沉 降 現 象 發 生 之 磨 料 1 | 則 以 新 鮮 磨 料 替 入 〇 1 1 此 兩 方 法 均 涉 及 一 項 缺 點 ) 須 大 量 加 入 磨 料 而 在 加 工 I 中 被 消 耗 〇 此 項 消 耗 顯 示 逐 漸 隨 磨 料 較 長 久 的 加 添 而 降 1 低 磨 除 〇 1 1 本 發 明 針 對 存 在 之 問 題 設 法 避 免 該 項 技 術 上 之 缺 點 〇 1 I 尤 其 在 方 法 的 進 行 中 盡 1 達 到 提 高 待 整 平 基 質 的 磨 除 1 -3 1 1 1 1 本紙ίΑ尺度( CNS ) Λ4規木*, ( 2丨(>,;!卩公犮) A7 —^4Mm-^-- 五、發明説明(> ) 率。另外應對較厚之層在整平之時能夠使磨除率適當維 持。 I - - - --1 ^^1 —^1 - 1 m 1 I I ("先閱讀背而之注意事項再填寫本頁) 根據本發明對此問題之解決,是採取一種方法,引入 高頻的音波、超音波或兆頻音波(Mega ferquency wave)於 磨料之中。 本發明因此提供一種能量的輸入,以避免磨粒的結塊 ,集聚或沉降,並予柢消,此外,磨料也比較均勻。藉 由磨料的較高均勻性,使能均勻施加於待整平之基質上。 能最之輸入,以利用音磬方式而奏效。所有的磬音激 勵,基本上均可適合供作能量輸入。在此所指者為音波 ,是使其頻率為遠在可聽範園之外。因此可以理解並未 限定於「高頻的音波、超音波或兆頻音波」的概念。此 項概念之運用寧勿表示在高頻的可聽聲音以至於兆赫範 圍之頓率,所有的激勵均可被納入本發明之方法。 高頻音波,超音波或兆頻音波可以於任何時點輸入。 為求磨料均勻並且避免磨粒結塊、集聚或沉降,當基 質相對於磨碟蓮動之時,應以高頻音波或超音波或兆頻 音波導入於磨料之中。 本發明的此項施行方式具有若干優點,可以應用於比 較持久的整平程序,例如應用於整平數百微毫米厚之層 Η,不須更換磨料。此外對於待整平基質使相同的磨蝕 稈序得到磨料的均勻性。 本發明另提供一榫適當種類之装置以施行此方法.備 有一或多個高頻音波、超音波或兆頻音波之輸入設備。 -4 - 木紙ίΑ尺度滴川中阈闷象標肀((’NS ) Λ4現格(2丨OX 297公f )A7 401876 MED in the Ministry of Pharmacology ^ UT disappeared in Α »Zhushe printed bismuth 5. Description of the invention (t) 1 1 This invention relates to a kind of chemical-mechanical grinding. In the meantime-a to be adjusted 1 1 flat Matrix-Add abrasive between the discs that move relative to the matrix > 1 1 Its% is composed of-solution and abrasive particles suspended in the solution. Please invent this invention first. In addition to the injury-* devices for进 / — The method J has ~ * reading back 6 1 fixture for substrate to be leveled > and a fixture for grinding discs, and 1 to 1 for abrasive feed Π 〇1 1 chemistry — Mechanical grinding is a leveling method that can be applied to various aspects of the leveling process again! 値 Semiconductor amm industry 〇 The way it is usually performed is to fill the device above the substrate to be leveled. Direction or Rotate to the base sheet V_- · 1 I to be processed. The mass of material I abuts the grinding disc. 0. The abrasive with the abrasive particles suspended 1 1 is applied to the grinding disc during or before the grinding process. Two different functions 1 1 One of them is to add the active chemical additives contained in the abrasive to the substrate to be leveled for chemical attack and the other function is to use the abrasive particles which are harder than the substrate to be leveled. The surface produces mechanical abrasion to the substrate. 0! ^ 1 In order to uniformly mix the abrasive J / JU in the solution 5 Before the abrasive is added, 1 I m bottom m Companion 0 1 In order to avoid the sedimentation behavior of the abrasive particles during the leveling process 5 It is known that in the process of flattening .. * · | Circulating pump to grind abrasives. 0 If there is abrasive 1 during sedimentation, use fresh abrasive instead. 01 Both methods involve a disadvantage. The material is consumed in processing I. This consumption shows that it gradually decreases with the longer addition of the abrasive. 1 Low abrasive removal. The present invention seeks to avoid the technical shortcomings of this problem in view of the existing problems. I I especially in the method In the process of doing 1 to achieve abrasion to improve the substrate to be leveled 1 -3 1 1 1 1 This paper ίΑ standard (CNS) Λ4 gauge wood *, (2 丨 (>,;! 卩 公 犮) A7 — ^ 4Mm- ^-5. Description of the invention (>) rate. In addition, the thicker layer should be able to properly maintain the removal rate when leveling. I-----1 ^^ 1 — ^ 1-1 m 1 II (" Read the back notice first and then fill out this page) The solution to this problem according to the present invention is to adopt a method to introduce high frequency Sound waves, ultrasonic waves or Mega ferquency waves in the abrasive. The invention therefore provides an energy input to avoid agglomeration, agglomeration or sedimentation of the abrasive particles, and to eliminate them, and in addition, the abrasive is relatively uniform. The higher uniformity of the abrasive enables uniform application to the substrate to be leveled. The most effective input is to use the sound mode. Basically, all chirp excitations are suitable for energy input. The reference here is the sound wave, which is to make its frequency far beyond the audible range. Therefore, it can be understood that the concept is not limited to "high-frequency sound waves, ultrasonic waves, or mega-frequency sound waves". The use of this concept rather than expressing audible sound at high frequencies and even the megahertz range, all stimuli can be incorporated into the method of the present invention. High frequency sound waves, supersonic waves or megafrequency sound waves can be input at any time. In order to make the abrasive uniform and avoid agglomeration, accumulation or sedimentation of the abrasive particles, when the substrate moves relative to the lotus, it should be introduced into the abrasive with high-frequency or ultrasonic or mega-frequency sound. This method of implementation of the present invention has several advantages, and can be applied to relatively long-lasting leveling procedures, for example, to level a layer with a thickness of several hundred micrometers without the need to change the abrasive. In addition, for the substrate to be leveled, the same abrasive stalk sequence is used to obtain the uniformity of the abrasive. The invention also provides a suitable type of tenon to perform this method. One or more input devices of high frequency sound waves, ultrasonic waves or mega frequency sound waves are provided. -4-Wooden paper ίΑ scale Dichuan mid-threshold stuffiness icon ((’NS) Λ4 is present (2 丨 OX 297 Male f)

A 五 /-V f明^説 £>明 一 設 在間 質其 基 , 平上 整面 待平 和锢 碟一 磨於 使落 有面 備觸 置接 裝且 項而 此 , ,合 ¾觸 用上 適而 HM. BSP 0^ 觸 待接 個 與 。質 備基 設於 入入 輸加 之被 用料 波磨 音在 頻 -兆式 或形 波I行 音施 超一之 或利 波有 音 一 頻另 高明 供發 有本 置 於 波 音 頻 兆 或 波 音 超 、 波 音 頻 高 入 供 中 當 或 。 前中 之之 碟料 磨磨 可 料 0 於 入 導 的 波 音 頻 兆 或 波 音 。 超 一了 /#4« 、施 波時 音入 頻加 高料 此磨 因在 以 。降或 施沉鐘 實或分 法聚數 方集前 種,之 多塊序 有結程 可致平 ,而整 波緊行 音壓進 入被在 導有以 接少可 直較也 前粒入 之磨導 入其的 加,波 料中 , 磨料勢 在磨趨 在之 波 , 音 宜 頻為 高入 入輸 導中 於當 應其 ,於 入或 輸M 量之 能料 的磨 少入 較進 。以波 行持音 施保頻 前量.# g 時謀苛 小為超' 數 、 基 平 整 待 置 安 方 上 碟 磨 在 其 點 優 他 其 。有 拌具 攪法 被方 料此二 磨這 使 適 之 用 波 音 供 置 設 須 只 置 裝 之 用 習 所 變 改 需 不 〇 ,P 時入 質當 展置 平設 水置 面裝 平入 觸加 接的 的波 間立曰 碟頻 磨兆 和或 質波 基胄 平超 整 、 待波 是音 點頻 優高 的且 別而 特 , 開 波 音 頻 高 將 是 式 形 施 實 佳 較 1 另 之 置 0裝 中明 之發 而本 平據 此根 於 之 Q 入 加 的 料 磨 於 設 置 裝 入 輸 用 所 。 波異 音 優 頻示 兆顯 或而 波上 音其 超或 、 中 木紙张尺度诚川屮K H3家榡;V. ( ΓN's ) Λ4規格(2丨0 X Μ7公# ) - - ^^^^1 - l·-- I n a Iff n^^i ^^1 ("先閱讀背而之注意事項再填寫本頁)A five / -V f ^ said that the first is located in the base of the interstitial, flat on the whole surface to be flat and the plate is polished so that the surface is ready for contact, and then Use suitable and HM. BSP 0 ^ to touch the next one. The quality base is set at the input and output plus the used material wave grinding sound in the frequency-mega type or shape wave I line sound Shi Chaoyi or Lee Bo sound tone frequency and another brilliant for distribution Ultra, audio frequency is high or low. Grinding of the former disc can be used to feed the Boeing frequency megabytes or Boeing into the guide. Super one / # 4 «, the audio frequency is increased when the wave is applied. Drop or apply Shen Zhongshi or Fractional Polynomial Set before the seed, the multi-block sequence can be flattened, and the full-wave tight sound pressure enters to be guided in order to reduce the number can be directly compared to the former. In the addition of grinding, in the wave material, the abrasive potential is in the wave of the wave, the sound frequency should be high in the input channel should be appropriate, it should be more in the input or input of the amount of energy of the material. The wave front sustains the amount of protection before the frequency. # G is a small number when it is too high, the basic level is set on the side of the disc. The disc is better at other points. There is a stirrer method that is used to grind the squares. This makes it necessary to change the use of the Boeing supply and installation facilities. It is not necessary to change the installation. The added wave interval stands for disc frequency rubbing and / or mass wave basis. The flat wave is super smooth. The wave to be waved is of high pitch frequency and unique. The open wave audio height will be better than 1 Set 0 to install in the middle of the hair, and Ben Ping is based on the Q into the material added to the set into the input station. Bo Yisheng's superior frequency shows mega display, while Bo Shangyin's super or, Zhongmu paper scale Chengchuan 屮 K H3 Jia 榡; V. (ΓN's) 4 specifications (2 丨 0 X Μ7 公 #)--^^ ^^ 1-l ·-I na Iff n ^^ i ^^ 1 (" Read the precautions before filling in this page)

、1T A7 --d048^€-----— 五、發明説明(W ) 所以例如設置供磨料用之加料通道或加料管,並在加 料通道或加料管之中或之上設置產生高頻音波、超音波 或兆頻音波等之裝置。 在磨料中高頻音波、超音波或兆頻音波之加入口也可 以水平或垂直設置。特別有利者爲高頻音波、超音波或 兆頻音波導入於溶劑之所在。 本發明較佳之其他結樽和特殊之處見於如后之較佳具 體例· 如后各實施例爲用於根據本發明之方法,以及用於施 行本發明方法所用之適合裝置; 圖示之簡單說明 第 1 圓 顯 示 具有 轉 換 器 與 磨 碟 之 晶 園 整平裝 匿 之 示 意 圓 〇 第 2 圃 顯 示 與第 1 圓 類 似 之 裝 置 其 轉 換 器 固 定 於 槽 之 邊 緣或 磨碟 中 央 之 示 意 圃 0 第 3 圖 願 示 與第 1 圖 類 似 之 裝 置 • 其 具 額 外 之 中 間 磨 漿 容 器之 示 意 圖 〇 第 4 園 顧 示 與第 1 圖 類 似 之 裝 置 1 其 轉 換 器 置 於 磨 漿 桶 內 之示 意 圜 0 實 施例1 :( 參 考第 1 園 ) 經濟部智慧財產局員工消費合作社印製 在一旋轉之磨碟上方,一個半導體基質被固定於可轉 動之碟架上,使其待整平之表面與磨碟平行而安置於其 上。 本紙張尺度適用中國國家標準(CNS > Α4規格(210X297公釐) 經濟部智慧財產局員工消費合作社印製 A7 --40 獅---- 五、發明説明(5 ) 磨碟備有大於碟架之直徑· 在廋1 上方,於未被碟架所遮蓋之範園內,設置供磨 料用之加料管·直接於磨碟表面處設一微小化之超苷波 產生器。 藉助於此裝置,在方法中使磨料經過其所用之加料管 加於磨碟上•逋當之磨料用量爲50毫升至500毫升,以 200毫升爲較隹•在磨料加入之後,磨碟與碟架旋轉而移 動,其間碟架在動力作用下使半導體基質屋抵於轉動之 磨碟。 同時藉由超音波產生器將頻率在40至50仟赫之微位 (rai-krolokal)超音波導入於在磨碟所出現之磨料上。所 輸出之適當功率爲2至10瓦,以4瓦爲特佳•在整個硏 磨程序中施行超音波硏磨至3分鎳*在較長的硏磨程序 中經歷至15分鏟,使有3分鎳加入超音波以避免結塊 、聚集或沉降等之發生* 爲求獲得完美之整平結果,原則上超音波之硏磨時間 和加入期間至少以30秒爲適宜。 若爲更長之硏磨程序,即如原則上硏磨程序長過三分 鏟者,由於整平程序使磨料之消耗增加,須通過加料管 再加入磨料,此期間被導至存在碟架上磨料之超音波不 須被中断· 其作業之流程爲: -將磨漿注入磨漿供給系統。 本紙張尺度適用中國國家揉準(CNS ) A4規格(210X297公釐) I I— I I 訂 I I I I —.^:, (請先閲讀背面之注意事項再填寫本頁) A7 ——404876--- 五、發明説明() -磨漿供給管配備有(超音波、兆頻音波)轉換器· -轉換器將苷波導入在供給管中的磨漿(例如2秒鎳)之 中》 -當磨碟與具有一晶圓的載體開始緩悵旋轉,並且轉換 器將音波導入在供給管中的磨漿中(例如5秒鏡)時, 此磨漿被供給至襯墊上(例如200奄升/分鎵)。 -當磨碟與具有晶騸之載艟對於一所選定的硏磨製程以 固定的速度與屋力旋轉並且轉換器將音波導入在供給 管中的磨漿之中(例如數秒鏡至數分鍊)時,磨漿被供 給至襯墊上· -磨漿停止流動,轉換器關掉,載體與磨碟慢下來,壓 力降低,淸洗劑被供給至襯墊上· -晶園被轉送至第二硏磨站或至淸潔站》 實施例2 :(參考第2圖) 如同實施例1,在旋轉的磨碟上方,在可轉動的碟架 上固定一半導體基質,使其待整平表面與磨碟平行而安 翯》與實施例1不同之處是磨碟存在於一裝注磨料的容 器內》 磨碟依然備有比碟架較大的直徑· 磨碟上方在未被碟架遮蓋之區域設有磨料用之加料管 ,直接於磨碌表面上設匿一微小化之超音波產生器。、 1T A7 --d048 ^ € ------- 5. Description of the invention (W) So, for example, a feeding channel or a feeding tube for abrasives is provided, and a high frequency is generated in or on the feeding channel or the feeding tube. Sound wave, ultrasonic wave or mega frequency sound wave device. The high frequency sound wave, ultrasonic wave or mega frequency sound wave inlet in the abrasive can also be set horizontally or vertically. Particularly advantageous is the introduction of high-frequency sound waves, ultrasonic waves or mega-frequency sound waves into the solvent. Other preferred knots and special features of the present invention can be found in the following specific examples. The following embodiments are used for the method according to the present invention and suitable devices for carrying out the method of the present invention; the illustration is simple Explanation The first circle shows the schematic circle of the crystal garden with converter and grinding disc. The second circle shows the device similar to the first circle. The converter is fixed to the edge of the groove or the center of the grinding disc. Figure shows a device similar to Figure 1. Schematic diagram with an additional intermediate refining container. 4th Circumstance Shows a device similar to Figure 1. Schematic of the converter placed in a refining bucket. Example 1: (Refer to the first park) The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed on a rotating grinding disc. A semiconductor substrate was fixed on a rotatable dish rack so that the surface to be leveled was parallel to the grinding disc. And placed on it. This paper size applies the Chinese national standard (CNS > A4 size (210X297mm). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. A7-40 Lion. Ⅴ. Description of the invention (5) Grinding discs are larger than Diameter of the rack · Above 廋 1, in the fan garden that is not covered by the dish rack, a feeding tube for abrasives is set. · A miniaturized superglycoside wave generator is set directly on the surface of the dish. With this device In the method, the abrasive is added to the grinding plate through the feeding tube used. • The amount of abrasive used is 50ml to 500ml, which is 200ml. • After the abrasive is added, the grinding plate and the plate rack rotate and move. In the meantime, the disc holder under the action of the power makes the semiconductor substrate house against the rotating grinding disc. At the same time, the rai-krolokal ultrasonic wave with a frequency of 40 to 50 GHz is introduced into the grinding disc by an ultrasonic generator. Appears on the abrasive. The appropriate output power is 2 to 10 watts, especially 4 watts. • Ultrasonic honing to 3 min nickel throughout the honing process * to 15 in the longer honing process Shovel so that 3 points of nickel are added to the ultrasound to avoid clumping, Occurrence of settling or sedimentation * In order to obtain perfect leveling results, in principle, the ultrasonic honing time and joining period should be at least 30 seconds. If it is a longer honing process, it is the same as the honing process in principle Those who are longer than a three-point shovel, because the leveling process increases the consumption of abrasives, the abrasives must be added through the feeding tube. During this period, the ultrasonic waves that are guided to the abrasives on the disc rack do not need to be interrupted. The operation process is:- The refining is injected into the refining supply system. This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) II—II Order IIII —. ^ :, (Please read the precautions on the back before filling this page) A7 --404876 --- V. invention is described in () - refining feed pipe is equipped with (ultrasonic, megasonic sound waves) converter · - waveguide converter glycosides in the feed tube into the refiner (e.g., 2 seconds Nickel 》 中》-When the grinding disc and the carrier with a wafer start to slowly rotate, and the converter introduces the sound wave into the refining slurry in the supply tube (such as a 5 second mirror), the refining slurry is supplied to the pad (For example 200 g / min gallium)-When grinding discs and tools There is a load of crystals. When a selected honing process rotates at a fixed speed and roof force and the converter introduces sound waves into the refining in the supply tube (for example, a few seconds mirror to a few chains), the refining It is supplied to the pad.-The refining slurry stops, the converter is turned off, the carrier and the disc are slowed down, the pressure is reduced, and the cleaning agent is supplied to the pad.-The crystal garden is transferred to the second honing station or To the cleaning station "Example 2: (refer to Figure 2) As in Example 1, a semiconductor substrate is fixed on a rotatable dish holder above the rotating grinding disc, so that the surface to be leveled is parallel to the grinding disc. "An" differs from Example 1 in that the grinding discs exist in a container filled with abrasives. "The grinding discs are still provided with a larger diameter than the disc holder. Above the discs, abrasives are provided in the area not covered by the disc holder. The feeding tube is used to directly conceal a miniaturized ultrasonic generator on the ground surface.

J 藉助於此項裝置,此方法得以施行,使容器充滿磨料 。適當之磨料用量爲0.5公升至10公升,以3至5公升 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之隹意事項再填寫本頁) 訂_ -纩 經濟部智慧財產局員工消費合作社印製· 404876 A7 B7 _ 五、發明説明(,) (請先閱讀背面之注^h項再填寫本頁) 爲較佳。在磨料加入之後,磨碟與碟架旋轉移動,其間 碟架在動力作用下使半導體基質屋抵於轉動的磨碟* 同時藉由超音波產生器將頻率在40至50仟赫之微位超 音波導入於在磨碟所出現之磨料上•所輸出之適當功率 爲2至10瓦,以4瓦爲特佳。在整個硏磨程序中施行超 苷波硏磨至3分鏡。在較長的硏磨程序中經歷至15分鎳 ,使有3分導入超音波以避免沉降作用· 爲求獲得完善之整平結果,原則上超音波之硏磨時間 和加入期間至少以30秒爲宜· 若爲更長之硏磨程序,即如原則上硏磨程序長過三分 鏡者,由於整平程序使磨料之消耗增加,須通過加料管 再添加磨料,此期間被導至存在碟架上磨料之超音波不 須被中斷。 其作業之流程爲: -磨碟配備一框以在襯墊上恆地保持一大體積作磨漿, 在磨碟的中央或在框的內容邊緣裝匿一(超音波、兆頻 音波)轉換器》 -將磨碟注以數公升的磨漿(例如2.5公升)。 經濟部智慧財產局員工消費合作社印製 -當硏磨晶圜時將轉換器之電源開啓較佳經歷3分鎳, 並且當晶圓離開襯墊時,將轉換器之電源關閉· -在襯墊上的磨漿每25片晶圓或依須要而更換。 實施例3:(參考第3圖) 一種用於化學一機械式整平程序之磨料,在容量爲數 本紙張尺度適用中國國家標準(CNS ) Α4規格(2丨0x297公釐) 404876 五、發明说明(e ) 公升之容器中以檐械攪拌器攪動》 通常容器之可容惫爲10公升至250公升。 (請先閲讀背面之注意事項再填寫本頁) 當容器內磨料被攬拌之後,所有這些磨料被裝於一個 容納較佳爲100毫升至1公升磨料之另一處理容器中· 在此容器內以頻率爲750仟赫至1000仟赫之兆頻音波導 入,其間以導入980仟赫的兆頻苷波爲特佳。導入聲音 功率在50與200瓦之間,其中以在150與250瓦間之値 經証明特佳。 其作業之流程爲: -容稹爲例如是0.1或1公升之中間磨漿容器,其配備有 (超音波、兆頻音波)轉換器。 -從供給系統來之磨漿例如每30分鎳縯入中間容器* -在磨漿已被饋入中間容器後,轉換器之電源開啓例如3 至5分鎮· -依據所選定硏磨過程之須要,將磨漿從中間容器饋至 襯墊上。 實施例4 :(參考第4圖) 經濟部智慧財產局員工消費合作社印製 在化學-機械式整平程序中,磨料之裝備可在一較大 容器中爲之,否則需要如前述之磨料撹拌器· 此容器原則上爲10公升至250公升範圍之滿容量。同樣 用750至1000仟赫頻率之兆頻音波攪拌,其間仍以980仟 赫頻率之兆頻音波爲特佳》 若導入聲音功率至少計爲1000瓦者,則特別可以避免 •10· 本紙張尺度適用中國國家標準(CNS ) A4規格(210'〆297公釐) 經濟部智慧財產局員工消費合作社印製- A7 404876_B7__ 五、發明説明(5 ) 磨粒之沉降作用》在導入功率爲1 500瓦至2500瓦者,可 達成特別良好之結果而不需太高之需求功率•較佳之输 入功率在2000瓦之範圔》 根據實施例3或4所製備之磨料,可以用於化學-檐 械式整平法的習用程序中。 然而同樣可以用一種預先處理之磨料用於化學一檐械 式之整平程序中,在其中同樣導入高頻音波、超苷波或 兆頻音波*以此方式,根據實施例1或2之施行形式與 根據實施例3或4之施行形式合倂。 其作業說明: ⑴旋轉截體握持住一晶圖 ⑵旋轉磨碟可能以一襯墊覆蓋 ⑶磨漿供給管 ⑷磨漿供給系統(例如磨漿桶) ⑸任何裝置(例如混合器,幫浦)其永久地激動在磨槳供 給系統中之磨漿· 轉換器被適當地固定於中間磨漿容器。 元件符號之說明 1 旋轉載體 2 旋轉磨碟 3 磨漿供給管 4 磨漿供給系統 5 中間磨漿容器 -11- 本紙張尺度適用中國國家標準(CNS ) A4規格(210Χ297公釐) —.1 I I .1 I I I I —I ~~訂^~ I I m (請先閲讀背面之注^*項再填寫本頁)J With the help of this device, this method can be implemented to fill the container with abrasive. Appropriate amount of abrasive is 0.5 liter to 10 liters. The paper size is 3 to 5 liters. Applicable to China National Standard (CNS) A4 specification (210X297 mm) (Please read the intention on the back before filling this page). Order _-印 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs · 404876 A7 B7 _ V. Description of the invention (,) (Please read the note ^ h on the back before filling this page) is better. After the abrasive is added, the grinding disc and the disc rack rotate and move, during which the disc rack is powered to make the semiconductor substrate house against the rotating grinding disc * At the same time, the ultrasonic generator generates a frequency in the micro-position of 40 to 50 GHz. The sound wave is introduced on the abrasive that appears on the disc. The appropriate output power is 2 to 10 watts, and 4 watts is particularly preferred. Ultrasine wave honing was performed to the 3-point mirror throughout the honing process. In the long honing process, up to 15 minutes of nickel, so that 3 points of ultrasonic waves are introduced to avoid sedimentation. To obtain a perfect leveling result, in principle, the ultrasonic honing time and joining period should be at least 30 seconds. It is suitable · If it is a longer honing process, that is, if the honing process is longer than a three-pointer in principle, the consumption of the abrasive will increase due to the leveling process, and the abrasive must be added through the feeding tube. This period is led to the existence of The ultrasonic waves of the abrasive on the disc rack need not be interrupted. The operation process is as follows:-The grinding plate is equipped with a frame to keep a large volume on the pad for refining. The center of the grinding plate or the edge of the frame is hidden (ultrasonic, megasonic) conversion. Device-Fill the disc with several liters of refining (eg 2.5 liters). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-When turning on the crystal, it is better to turn on the converter's power for 3 minutes of nickel, and when the wafer leaves the pad, turn off the converter's power ·-On the pad The refining on the wafer is changed every 25 wafers or on demand. Example 3: (Refer to Figure 3) An abrasive for chemical-mechanical leveling procedures. Applicable to China National Standard (CNS) A4 specification (2 丨 0x297 mm) for several paper sizes. 404876 V. Invention Note (e) Stirring with eaves stirrer in a liter container. Generally, the capacity of the container is 10 liters to 250 liters. (Please read the precautions on the back before filling this page.) After the abrasives in the container are stirred, all these abrasives are placed in another processing container containing preferably 100 ml to 1 liter of abrasive. · In this container Mega-frequency sound waves with a frequency of 750 仟 to 1000 仟 are introduced, and mega-frequency glycosides with a frequency of 980 仟 are particularly preferred. Introduced sound power between 50 and 200 watts, with a range between 150 and 250 watts proven to be particularly good. The process of its operation is:-The capacity of the container is, for example, an intermediate refining container of 0.1 or 1 liter, which is equipped with a (ultrasonic, megasonic) converter. -Refining from the supply system, such as nickel into the intermediate container every 30 minutes *-After the refining has been fed into the intermediate container, the converter's power is turned on, for example, 3 to 5 minutes ·-According to the selected honing process It is necessary to feed the refining slurry from the intermediate container to the pad. Example 4: (Refer to Figure 4) Printed in the chemical-mechanical leveling procedure by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the abrasive equipment can be used in a larger container, otherwise the abrasive mixing as described above is required • This container is in principle a full capacity in the range of 10 liters to 250 liters. Also use mega-frequency sound waves with a frequency of 750 to 1000 GHz, while mega-frequency sound waves with a frequency of 980 MHz are particularly preferred. If the sound power is at least 1,000 watts, it can be avoided in particular. Applicable to China National Standard (CNS) A4 specification (210'〆297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-A7 404876_B7__ V. Description of the invention (5) Settling effect of abrasive grains "The imported power is 1 500 watts To 2500 watts, you can achieve particularly good results without requiring too much power. • The preferred input power is in the range of 2000 watts. "The abrasive prepared according to Example 3 or 4 can be used in chemical-eaves. Leveling routines. However, it is also possible to use a pre-treated abrasive for chemical-eave-type leveling procedures, in which high-frequency sound waves, superglycoside waves, or mega-frequency sound waves are also introduced *. The form is combined with the execution form according to Embodiment 3 or 4. Description of its operation: ⑴ Rotating section holding a crystal picture ⑵ Rotary grinding disc may be covered with a pad ⑶ Refining supply pipe ⑷ Refining supply system (such as refining barrel) ⑸ Any device (such as mixer, pump ) The refining converter permanently excited in the paddle supply system is properly fixed to the intermediate refining container. Explanation of component symbols 1 Rotary carrier 2 Rotary grinding disc 3 Refining supply tube 4 Refining supply system 5 Intermediate refining container -11- This paper size applies to China National Standard (CNS) A4 (210 × 297 mm) —.1 II .1 IIII —I ~~ Order ^ ~ II m (Please read the note on the back ^ * before filling this page)

Claims (1)

修正5^8 Β8 C8 D8 經濟部智慧財產局員工消費合作社印製 104876申請專利範圍 第87 115836號「化學-機械式整平所用之方法及進行此方 法所用之裝匿」專利案 (89年1月 修正) A申請専利範圍: 1. 一種化學一機械式硏磨所用之方法,其間在待磨基質 與相對於基質而運動之磨碟之間加入一種磨料,該磨 料由溶液和懸浮於溶液中之磨粒組成, 其特徵在於, 以高頻音波、超音波或兆頻Mega frequency)音波 (wave)導入於磨料之中。 2. 如申諝専利範圔第1項之方法,其中 在基質相對於磨碟運動時,導入高頻音波、超音波 或兆頻音波於磨料之中。 3. 如申請專利範圍第1或2項之方法,其中 在磨料被加入至基質與磨碟當中之時或之前,導入 高頻音波、超音波或兆頻音波於磨料中。 4. 如申請専利範圍第1或2項之方法,其中在高頻音波 、超音波或兆頻音波被導入於磨粒之前或其當中,磨, 粒被攬拌。 5. 如申請専利範園第1或2項之方法,其中頻率在40至 50仟赫範圍之超音波被導入於磨料之中。 6 .如申請專利範圍第3項之方法,其中頻率在40至50 仟赫範圍之超音波被導入於磨料之中。 (請先聞讀背面之注項再填寫本頁) 遂· '11 本紙張尺度遠用中國國家揉率(CNS ) A4规格(210XM7公釐) 修正5^8 Β8 C8 D8 經濟部智慧財產局員工消費合作社印製 104876申請專利範圍 第87 115836號「化學-機械式整平所用之方法及進行此方 法所用之裝匿」專利案 (89年1月 修正) A申請専利範圍: 1. 一種化學一機械式硏磨所用之方法,其間在待磨基質 與相對於基質而運動之磨碟之間加入一種磨料,該磨 料由溶液和懸浮於溶液中之磨粒組成, 其特徵在於, 以高頻音波、超音波或兆頻Mega frequency)音波 (wave)導入於磨料之中。 2. 如申諝専利範圔第1項之方法,其中 在基質相對於磨碟運動時,導入高頻音波、超音波 或兆頻音波於磨料之中。 3. 如申請專利範圍第1或2項之方法,其中 在磨料被加入至基質與磨碟當中之時或之前,導入 高頻音波、超音波或兆頻音波於磨料中。 4. 如申請専利範圍第1或2項之方法,其中在高頻音波 、超音波或兆頻音波被導入於磨粒之前或其當中,磨, 粒被攬拌。 5. 如申請専利範園第1或2項之方法,其中頻率在40至 50仟赫範圍之超音波被導入於磨料之中。 6 .如申請專利範圍第3項之方法,其中頻率在40至50 仟赫範圍之超音波被導入於磨料之中。 (請先聞讀背面之注項再填寫本頁) 遂· '11 本紙張尺度遠用中國國家揉率(CNS ) A4规格(210XM7公釐) A8 B8 C8 — ΑαΑ876 ,__ 六、申請專利範圍 7·如申請專利範圍第4項之方法,其中頻率在40至50 仟赫範圍之超音波被導入於磨料之中。 8. 如申請專利範圍第1或2項之方法,其中頻率在7 50 至1000仟赫範圍之兆頻音波被導入於磨料之中。 9. 如申請專利範圍第3項之方法,其中頻率在7 50至 1000仟赫範園之兆頻音波被導入於磨料之中。 10. 如申請專利範圔第4項之方法,其中頻率在750至 1〇〇〇仟赫範圍之兆頻音波被導入於磨料之中。 11. 如申請專利範圍第8項之方法,其中 頻率在980仟赫範圍之兆頻音波被導入於磨料之中 〇 12. —種進行申請專利範圍第1至π項中任一項方法所用 之裝置,具有用於整平基質之夾具,和用於一磨碟之 另一夾具,以及用於磨料之加入口, 其特徽在於,有一或多個導入裝置供高頻苷波、超 音波或兆頻音波所用。 13. 如申請專利範圍第12項之裝置,其中 磨碟與待整平之基質可以觸接於一接觸面中,而 且接觴面落於一平面之內,在其中設置一導入裝置供 高頻音波、超音波或兆頻音波所用。 14. 如申請専利範園第12或13項之裝置,其中 供高頻音波、超音波或兆頻音波所用之導入裝置設 於供磨料用輸入口之中或之上。 -2- 本紙張尺度適用中國國家揲準(CNS ) Α4规格(210X297公釐) (請先Μ讀背面之注意Ϋ項再4寫本頁) 訂 經濟部智慧財產局員工消費合作社印製Amended 5 ^ 8 Β8 C8 D8 Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 104876 Patent Application No. 87 115836 "Method for Chemical-Mechanical Leveling and Concealment for Performing the Method" (1 in '89) (Monthly revision) A. Application scope: 1. A method used in chemical-mechanical honing, in which an abrasive is added between the substrate to be ground and the grinding disc moving relative to the substrate. The abrasive consists of a solution and a suspension in the solution. The abrasive grain composition is characterized by being introduced into the abrasive material by a high-frequency sound wave, an ultrasonic wave, or a mega-frequency wave. 2. The method described in item 1 of Shen Lili Fan, where high-frequency sound waves, ultrasonic waves, or mega-frequency sound waves are introduced into the abrasive when the substrate moves relative to the abrasive disc. 3. The method according to item 1 or 2 of the patent application scope, wherein high-frequency sound waves, ultrasonic waves, or mega-frequency sound waves are introduced into the abrasive material when or before the abrasive material is added to the substrate and the disc. 4. If you apply for the method of item 1 or 2 of the profit scope, in which high-frequency sound waves, ultrasonic waves, or mega-frequency sound waves are introduced before or in the abrasive grains, the abrasive grains are stirred. 5. If you apply for the method of item 1 or 2 of the Fanli Garden, the ultrasonic waves with a frequency in the range of 40 to 50 GHz are introduced into the abrasive. 6. The method according to item 3 of the patent application range, wherein an ultrasonic wave having a frequency in the range of 40 to 50 GHz is introduced into the abrasive. (Please read the note on the back before filling out this page.) Then '11 The paper size is far from China's national kneading rate (CNS) A4 specification (210XM7 mm) Amendment 5 ^ 8 Β8 C8 D8 Employees of Intellectual Property Bureau, Ministry of Economic Affairs Printed by Consumer Cooperatives 104876 Patent Application No. 87 115836 “Method for Chemical-Mechanical Leveling and Concealment Used to Perform This Method” (Amended in January 89) A. Application scope: 1. A chemical one A method for mechanical honing, in which an abrasive is added between a substrate to be ground and a disc moving relative to the substrate, the abrasive is composed of a solution and abrasive particles suspended in the solution, and is characterized by high-frequency sound waves Ultrasonic or Mega frequency waves are introduced into the abrasive. 2. The method described in item 1 of Shen Lili Fan, where high-frequency sound waves, ultrasonic waves, or mega-frequency sound waves are introduced into the abrasive when the substrate moves relative to the abrasive disc. 3. The method according to item 1 or 2 of the patent application scope, wherein high-frequency sound waves, ultrasonic waves, or mega-frequency sound waves are introduced into the abrasive material when or before the abrasive material is added to the substrate and the disc. 4. If you apply for the method of item 1 or 2 of the profit scope, in which high-frequency sound waves, ultrasonic waves, or mega-frequency sound waves are introduced before or in the abrasive grains, the abrasive grains are stirred. 5. If you apply for the method of item 1 or 2 of the Fanli Garden, the ultrasonic waves with a frequency in the range of 40 to 50 GHz are introduced into the abrasive. 6. The method according to item 3 of the patent application range, wherein an ultrasonic wave having a frequency in the range of 40 to 50 GHz is introduced into the abrasive. (Please read the note on the back before filling out this page.) Then '11 The paper size is far from the Chinese national kneading rate (CNS) A4 specification (210XM7 mm) A8 B8 C8 — ΑαΑ876, __ VI. Application scope 7 The method according to item 4 of the patent application, in which an ultrasonic wave having a frequency in the range of 40 to 50 GHz is introduced into the abrasive. 8. The method of claim 1 or 2, in which the megafrequency sound waves with a frequency in the range of 7 50 to 1000 GHz are introduced into the abrasive. 9. The method according to item 3 of the patent application, in which mega-frequency sound waves with a frequency of 7 50 to 1000 MHz are introduced into the abrasive. 10. The method according to item 4 of the patent application, in which a megafrequency sound wave having a frequency in the range of 750 to 1000 Hz is introduced into the abrasive. 11. If the method of the scope of patent application No. 8 is used, the mega-frequency sound wave with a frequency in the range of 980 MHz is introduced into the abrasive. 12. A method for performing any of the methods of scope of patent application No. 1 to π The device has a jig for leveling a substrate, another jig for one grinding disc, and a feeding port for abrasives. The special feature is that one or more introduction devices are used for high-frequency aglycones, ultrasound or Used by mega-frequency sound waves. 13. For the device of the scope of application for patent No. 12, in which the grinding disc and the substrate to be leveled can be contacted in a contact surface, and the contact surface falls within a plane, an introduction device is provided therein for high frequency Used by sonic, ultrasonic, or megasonic waves. 14. If you apply for the device of Yuanli Fanyuan, the introduction device for high-frequency sound waves, ultrasonic waves or mega-frequency sound waves is set in or on the input port for abrasives. -2- This paper size applies to China National Standards (CNS) Α4 size (210X297 mm) (please read the note on the back first and then write this page) Order Printed by the Intellectual Property Bureau Staff Consumer Cooperatives
TW87115836A 1997-09-26 1998-09-23 Process for chemical-mechanical planarization and equipment for performing said process TW404876B (en)

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TWI716207B (en) * 2019-11-27 2021-01-11 國家中山科學研究院 Multi-vibration source grinding cavity

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US6124207A (en) * 1998-08-31 2000-09-26 Micron Technology, Inc. Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries

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JPS63185556A (en) * 1987-01-28 1988-08-01 Toshiba Corp Polishing device
US5245796A (en) * 1992-04-02 1993-09-21 At&T Bell Laboratories Slurry polisher using ultrasonic agitation
JP3353510B2 (en) * 1994-04-21 2002-12-03 ソニー株式会社 Chemical mechanical polishing method, chemical mechanical polishing apparatus, and semiconductor device manufacturing method using the same
US5688364A (en) * 1994-12-22 1997-11-18 Sony Corporation Chemical-mechanical polishing method and apparatus using ultrasound applied to the carrier and platen

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