A7 3372tw!：doc/008 B7 經满部中央標率局員工消費合作社印製 五、發明説明（丨） 本發明是有關於一種積體電路的製造方法，且特別是 有關於一種淺溝渠隔離（Shallow Trench Isolation，STI) 區之製造方法。 元件隔離區係用以防止載子（Carrier)通過基底而在 相鄰的元件間移動之用。典型的元件隔離區係形成於稠密 的半導體電路’比如是動態隨機存取記憶體（DRAM)中 相鄰的場效電晶體（Field Effect Transistor，FET)之間， 藉以減少由場效電晶體產生的漏電流（Leakage)現象。典 型形成兀件隔離區的方法係採用局部區域氧化技術 (LOCOS)。由於局部區域氧化技術的日趨成熟，因此可 藉此技術，以較低的成本獲得信賴度高且有效之元件隔離 結構。然而，採用局部區域氧化的方式具有應力產生的問 題與場隔離結構周圍鳥嘴區（Bird’s Beak )的形成等缺點。 其中’特別是鳥嘴區的形成，使得在小型的元件上，以 LOCOS方式所形成之場隔離結構並不能做有效地隔離，所 以在高密度（High Density)元件中，必須以較易於調整大 小的淺溝渠隔離（Shallow Trench Isolation，STI)方式所 形成之元仵隔離結構來取代。 淺溝渠隔離法是一種利用非等向性触刻方法在半導 體基底中形成溝渠’然後在溝渠中塡入氧化物’以形成元 件之隔離區的技術。由於淺溝渠隔離法所形成之場隔離區 具有可調整大小（Sca〖eable)的優點，並且可避免傳統區 域氧化法隔離技術中鳥嘴侵蝕，（Bird's Beak Encroachment)的缺點’因此，對於次微米（Sub-Micron) 的互補式金氧半導體（CMOS)製程而言，是一種較爲理 ik 閱 !而 汰 章 f 訂 本紙張尺度適用中國國家標纷-( CNS ) Λ4規将（21〇χ 297公处） 經漓部中央標卑局員工消費合作社印製 Λ7 3372t\vr.doc/OOK 幻 五、發明説明（〕） 想與的隔離技術。 第1A圖至第1E圖是習知一種淺溝渠隔離區製造流程 之剖面圖。請參照第1A圖，首先，以熱氧化（Thermal Oxidation)法在砂基底100上形成一層墊氧化層（Pad Oxide) 102，此墊氧化層102係用以在製程中保護該矽基 底100的表面。接著，在墊氧化層102上，以低壓化學氣 相沉積法（Low Pressure Chemically Vapor Deposition， LPCVD)开多成一層氮化石夕罩幕層104〇 然後，請參照第1B圖，以習知的方法在氮化矽罩幕層 104表面上形成一層光阻層，並依序蝕刻氮化矽罩幕層 104、墊氧化層102與矽基底100，以在矽基底100中形成 溝渠106與108，其後，再將光阻層去除。 接著，請參照第1C圖，以高溫熱氧化法，在溝渠106 與108所暴露出的矽基底100表面，形成襯氧化層（Liner Layer ) 1 10。此襯氧化層1 10會延伸至與墊氧化層102a接 觸。然後，在構渠106與108中塡入絕緣層112，例如是 利用常壓化學氣相沉積法（APCVD)形成氧化矽，接著， 再於高溫下，執行密實化（Densification)，以形成氧化矽材 質之絕緣層1 1 2 3 ' 其後，請參照第1D圖，以氮化矽罩幕層104a作爲硏 磨終止層，利用化學機械硏磨法去除多餘的絕緣層112。 然後，請參照第1E圖，以熱磷酸溶液去除氮化矽罩幕 層1 〇4a，露出墊氧化層1 02a。其後，利用氫氟酸（HF ) 溶液浸蝕，以去除墊氧化層l〇2a，在基底100中形成隔離 區 124a 與 124b。 4 (請先閱讀贤兩之泣意事項再填寫本頁) 衣·A7 3372tw !: doc / 008 B7 Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the People's Republic of China. 5. Description of the Invention (丨) The present invention relates to a method for manufacturing integrated circuits, and in particular, to a shallow trench isolation ( Shallow Trench Isolation (STI) manufacturing method. The element isolation region is used to prevent carriers from moving between adjacent elements through the substrate. A typical element isolation region is formed in a dense semiconductor circuit, such as between adjacent field effect transistors (FETs) in a dynamic random access memory (DRAM), thereby reducing the generation of field effect transistors. Leakage phenomenon. A typical method of forming the isolation zone of the element is the local area oxidation technique (LOCOS). As the local area oxidation technology becomes more mature, this technology can be used to obtain a reliable and effective component isolation structure at a lower cost. However, the method of using localized area oxidation has the problems of stress generation and the formation of Bird's Beak around the field isolation structure. Among them, especially the formation of the bird's beak area makes the field isolation structure formed by the LOCOS method on small components not effective for isolation. Therefore, in high density (High Density) components, it must be easier to adjust the size The elementary trench isolation structure formed by the Shallow Trench Isolation (STI) method is used instead. Shallow trench isolation is a technique that uses a non-isotropic etching method to form trenches in a semiconductor substrate and then injects oxides into the trenches to form an isolation region of the device. The field isolation area formed by the shallow trench isolation method has the advantages of adjustable size (Sca 〖eable), and can avoid the disadvantages of Bird's Beak Encroachment in the traditional regional oxidation isolation technology. Therefore, for submicron (Sub-Micron) 's complementary metal-oxide-semiconductor (CMOS) manufacturing process is a more rational approach. The paper size of the stamp f is applicable to China's national standards-(CNS) Λ4 Regulations (21〇χ Office 297) Printed by the Consumer Standards Cooperative of the Central Bureau of Standards and Labor of the Ministry of Liberation Λ7 3372t \ vr.doc / OOK Fifth, the description of the invention ()) Isolation technology. Figures 1A to 1E are cross-sectional views of a conventional manufacturing process for a shallow trench isolation area. Please refer to FIG. 1A. First, a pad oxidation layer 102 is formed on the sand substrate 100 by a thermal oxidation method. The pad oxidation layer 102 is used to protect the surface of the silicon substrate 100 during the manufacturing process. . Next, on the pad oxide layer 102, a low pressure chemically vapor deposition method (Low Pressure Chemically Vapor Deposition, LPCVD) is used to form an additional nitrided oxide mask layer 104. Then, please refer to FIG. 1B for a conventional method. A photoresist layer is formed on the surface of the silicon nitride mask layer 104, and the silicon nitride mask layer 104, the pad oxide layer 102, and the silicon substrate 100 are sequentially etched to form trenches 106 and 108 in the silicon substrate 100. After that, the photoresist layer is removed. Next, referring to FIG. 1C, a liner layer 1 10 is formed on the surface of the silicon substrate 100 exposed by the trenches 106 and 108 by a high-temperature thermal oxidation method. This liner oxide layer 10 will extend to contact the pad oxide layer 102a. Then, an insulating layer 112 is inserted into the trenches 106 and 108, for example, silicon oxide is formed by using atmospheric pressure chemical vapor deposition (APCVD), and then densification is performed at a high temperature to form silicon oxide. Insulating layer 1 1 2 3 ′ After that, referring to FIG. 1D, the silicon nitride mask layer 104 a is used as a honing stop layer, and the excess insulating layer 112 is removed by chemical mechanical honing. Then, referring to FIG. 1E, the silicon nitride mask layer 10a is removed with a hot phosphoric acid solution, and the pad oxide layer 102a is exposed. Thereafter, etching with a hydrofluoric acid (HF) solution is performed to remove the pad oxide layer 102a, and isolation regions 124a and 124b are formed in the substrate 100. 4 (Please read the Weeping Things of Kenji before filling out this page)
、1T 本紙張尺度適用中國國家標準（CNS ) Ad规格（210Χ 297公处） A7 B7 3372twr.doc/008 五、發明説明（巧） 在上述方法中，由於溝渠106與108的密度與面積大 小的不同，會影響化學機械硏磨法的均勻性（Uniformity )， 而在硏磨絕緣層Π2時，常又需要過度硏磨，以確保氮化 矽罩幕層l〇4a上不會殘留絕緣層112，因此，常造成溝渠 面積較大者108，所形成之隔離區124b產生凹陷130的現 象，即碟狀效應（Dishing Effect)。另一方面，以化學機 械法硏磨絕緣層112的過程中，硏漿中的顆粒（Particle) 會使得硏磨後的絕緣層112表面形成許多的刮痕140，請 參照第1D圖。而這些刮痕140在後續以氫氟酸浸蝕以去 除墊氧化層i〇2a的過程中，將因爲氫氟酸的浸蝕，而使其 形成更深且範圍更大的刮痕（Microscratch) 140a，造成後 續製程上的問題與困擾。例如形成於較小溝渠106中的絕 緣層Π2，若在硏磨的過程中形成刮痕140，而此刮痕在氫 氟浸鈾後，其範圍擴大爲140a，易使得隔離區124a二側 的主動區上所形成的複晶矽閘極層，產生橋接的現象。 因此本發明的目的就是在提供一種淺溝渠隔離區之製 造方法，可以使化學機械硏磨製程的控制更爲容易，改善 化學機械硏磨的均勻性，避免碟狀效應的發生，並且防止 刮痕的形成。 依照本發明之上述目的與其他目的，提出一種淺溝渠 隔離區之製造方法，此方法係依照典型的方法在基底上依 序形成具有開口圖案的墊氧化層與罩幕層之後，以罩幕層 爲蝕刻罩幕，在基底中蝕刻出溝渠。接著，在基底上形成 一層絕緣層，其厚度足以覆蓋形成於基底之中的溝渠，且 此絕緣層表面之最低端的高度，介於罩幕層之上緣與下緣 (請先閱讀，背面之注意事項再填寫本頁) 、-° 經漓部中央標準局貝工消费合作社印製 本纸張尺度適用中國國家標準（CNS ) /\4规掊（210 X 297公#)、 1T This paper size is applicable to Chinese National Standard (CNS) Ad specifications (210 × 297). A7 B7 3372twr.doc / 008 V. Description of the invention (clever) In the above method, due to the density and area of the trenches 106 and 108, Different, it will affect the uniformity of the chemical mechanical honing method (Uniformity), and when honing the insulating layer Π2, it is often necessary to over honing to ensure that the insulating layer 112 does not remain on the silicon nitride mask layer 104a. Therefore, the larger the trench area 108 is often caused, the formed isolation region 124b generates a depression 130 phenomenon, that is, a dishing effect. On the other hand, during the process of honing the insulating layer 112 by a chemical mechanical method, particles (particles) in the paste will cause a lot of scratches 140 on the surface of the honing insulating layer 112. Please refer to FIG. 1D. In the subsequent process of etching with hydrofluoric acid to remove the pad oxide layer i02a, these scratches 140 will form a deeper and wider range of microscratch 140a due to the etching of hydrofluoric acid, resulting in Problems and dilemmas in subsequent processes. For example, if the insulating layer Π2 formed in the smaller trench 106 is formed with a scratch 140 during honing, and this scratch is expanded to 140a after leaching with hydrofluoride, it is easy to make the two sides of the isolation region 124a The polycrystalline silicon gate layer formed on the active area produces a bridging phenomenon. Therefore, the purpose of the present invention is to provide a method for manufacturing a shallow trench isolation zone, which can make the control of the chemical mechanical honing process easier, improve the uniformity of the chemical mechanical honing, avoid the dish-like effect, and prevent scratches. Formation. According to the above and other objectives of the present invention, a method for manufacturing a shallow trench isolation area is proposed. This method is to form a mask oxide layer and a mask layer with an opening pattern on a substrate in order according to a typical method. To etch the mask, trenches are etched into the substrate. Next, an insulating layer is formed on the substrate, which is thick enough to cover the trenches formed in the substrate, and the height of the lowest end of the surface of the insulating layer is between the upper and lower edges of the mask layer (please read first, the back of the Please fill in this page again for the matters needing attention),-° This paper is printed by the Central Bureau of Standards of the Ministry of Standards and Technology of the People's Republic of China, and the paper size is applicable to Chinese National Standards (CNS) / \ 4 掊 (210 X 297 公 #)
.i372l\vr.doc/00tS A7 H7 五、發明説明（0) 之間。然後，在絕緣層上覆蓋一層氮化矽保護層，並以罩 幕層爲硏磨終止層，利用化學機械硏磨法，硏磨元件的表 面，以去除多餘的氮化矽保護層與絕緣層。其後，去除罩 幕層、氮化矽保護層與墊氧化層，以使留下之絕緣層在基 底中形成隔離區。由於以化學機械硏磨時，會先硏磨去除 罩幕層上方的氮化矽保護層與絕緣層，而位於溝渠上方之 絕緣層，則有硬度較高且厚度較厚的氮化矽保護層的保 護，因而可以防止塡充於溝渠之絕緣層產生凹陷的現象， 以獲得較佳之均勻度，並且避免硏磨過程中硏漿之顆粒在 溝渠之絕緣層中形成刮痕。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： ， 圖式之簡單說明： ， 第1A圖至第1E圖是習知一種淺溝渠隔離區製造流程 的剖面圖；以及 第2A圖至第2E圖是依照本發明一較佳實施例之淺溝 渠隔離區製造流程的剖面圖。 標記之簡單說明： 100，200 :基底 102，102a，202，202a :墊氧化層 104，104a，204，204a :罩幕層 106，108，206，208 :溝渠 1 10，2 1 0 :襯氧化層 112，112a，1 12b，212，212a，212b :絕緣層 6 (請先閱讀."VS?-XJ意事項#填寫本頁) 0..i372l \ vr.doc / 00tS A7 H7 V. Description of invention (0). Then, a silicon nitride protective layer is covered on the insulating layer, and the mask layer is used as a honing stop layer. The surface of the element is honed by chemical mechanical honing to remove the excess silicon nitride protective layer and the insulating layer. . Thereafter, the mask layer, the silicon nitride protective layer, and the pad oxide layer are removed, so that the remaining insulating layer forms an isolation region in the substrate. When chemical mechanical honing is performed, the silicon nitride protective layer and the insulating layer above the cover layer are removed by honing, and the insulating layer above the trench has a higher hardness and a thicker silicon nitride protective layer. Therefore, it is possible to prevent the phenomenon that the insulating layer filled in the trench is depressed, to obtain better uniformity, and to avoid the formation of scratches on the insulating layer of the trench during the honing process. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings to describe in detail as follows: 1A to 1E are cross-sectional views of a conventional manufacturing process for a shallow trench isolation area; and FIGS. 2A to 2E are cross-sectional views of a manufacturing process for a shallow trench isolation area according to a preferred embodiment of the present invention. Brief description of marking: 100, 200: substrates 102, 102a, 202, 202a: pad oxide layers 104, 104a, 204, 204a: masking layers 106, 108, 206, 208: trench 1 10, 2 1 0: liner oxidation Layers 112, 112a, 112b, 212, 212a, 212b: Insulation layer 6 (Please read first. &Quot; VS? -XJ 意 事 #Fill in this page) 0.
、1T 經滴部中央標準局員工消费合作社印取 本紙張尺度適用中國國家標準（CNS ) Λ4规梢（210X 297公# ) A7 H7 3372lwl*c!oc/008 五、發明説明（（） 124a，124b，224a，224b :隔離區 130 :凹陷區 140 : 丨 140a :刮痕 214 ： :保護層表面之最低端 218 ： 上緣 220 : 下緣 222， '222a :保護層 250， 260 ： 區域 280 : 虛線區域 實施例 第2A圖至第2E圖，其繪示依照本發明一較佳實施例 之淺溝渠隔離區製造流程之剖面圖。 首先，請參照第2A圖，在所提供的基底200上形成一 層墊氧化層202,以在製程中保護基底200的表面。接著， 於墊氧化層202上，再形成一層罩幕層204。其中，基底 200之材質例如p型矽；墊氧化層202的形成方法例如爲 熱氧化法；而罩幕層2〇4之材質包括氮化矽，p成的方法 例如爲低壓化學氣相沉積法。 然後，請參照第2B圖，定義罩幕層204與墊氧化層 202，並在基底200中形成溝渠206與208。典型的方法係 在罩幕層204表面上形成一層圖案化的光阻層，然後以乾 式蝕刻法，依序蝕刻罩幕層2〇4、墊氧化層202以及基底 200，其後，再將光阻層去除的方式，以在基底200中形成 溝渠206與208。 之後，請參照第2C圖，在溝渠206與208所暴露出之 7 (請先閱讀背面之，注意事項再填寫本頁) --'5° 經滴部中央標準局員工消费合作社印製 本紙張尺度適用中國國家標準（CNS )八4规枱（210X 297公邾） A7 13 7 3372twf.doc/〇08 五、發明説明（d ) 基底200的表面，形成襯氧化層210。此襯氧化層210會 延伸至與塾氧化層2 0 2 a相接觸。接者’再於基底2 0 0上形 成一層絕緣層212’其厚度足以覆蓋形成於基底之中的溝 渠2 0 6與2 0 8，旦此絕緣層2 1 2表面之最低端2 14係位於 面積較大之溝渠208的上方’其高度介於罩幕層204a之上 緣218與下緣22〇之間。其後’再於絕緣層210上形成一 層保護層2 2 2。其中’典型形成襯氧化層2 1 0的方法係以 高溫熱氧化的方式；而絕緣層2 12之材質包括氧化砂’形 成的方法例如是以四乙氧基矽烷（TEOS)爲反應氣體’利 用常壓化學氣相沉積法（APCVD)先形成氧化砂’然後’ 再於高溫下，比如在約爲l〇〇〇°C的溫度下’加熱約1〇〜3〇 分鐘，以使氧化砍密實化（Densificati〇n) ’而形成TE〇S 氧化矽材質之絕緣層212 ;保護層222之材質的硏磨去除 速率較低於絕緣餍210,且其硬度較高於後續化學機械硏 磨製程中所採用之硏漿顆粒。當絕緣層210之材質爲氧化 矽時，保護層222之材質包括氮化砂’其厚度約爲 100A〜1000A 之間 ° 接著，請參照第2D圖，以罩幕層2〇4a爲終止層，去 除部份的保護層222與絕緣層2 I2。例如’以罩幕層2〇4a 作爲硏磨終止層，利用化學機械硏磨法’去除罩幕層2〇4a 上多餘的保護層222與絕緣層212 ’以裸露出罩幕層2〇4a 的表面，留下溝渠206與溝渠2〇1之中的絕緣層2l2a與 212b與保護層222a。 由於以化學機械硏磨時’會先硏磨去除元件表面的突 起處，即形成於罩幕層204上方的保護層222與絕緣層 (請先閱讀背而之-意事項弄填寫本頁) 、1' 經满部中央標準局员工消费合作社印製 本紙張尺度適用中國國家標隼（CNS〉八4规梠（2丨0X 297公# ) 1 A7、 1T Printed by the Consumers Cooperative of the Central Standards Bureau of Didi Ministry. The paper size is applicable to Chinese National Standards (CNS) Λ4 gauge (210X 297 public #) A7 H7 3372lwl * c! Oc / 008 5. Description of the invention (() 124a, 124b, 224a, 224b: Isolation area 130: Depression area 140: 丨 140a: Scratch 214 :: The lowest end of the protective layer surface 218: Upper edge 220: Lower edge 222, '222a: Protective layer 250, 260: Area 280: Figures 2A to 2E of the embodiment of the dotted area show cross-sectional views of the manufacturing process of the shallow trench isolation area according to a preferred embodiment of the present invention. First, please refer to Figure 2A, and form on the substrate 200 provided. A pad oxide layer 202 to protect the surface of the substrate 200 during the process. Next, a mask layer 204 is formed on the pad oxide layer 202. The material of the substrate 200 is, for example, p-type silicon; the formation of the pad oxide layer 202 The method is, for example, a thermal oxidation method; the material of the mask layer 204 includes silicon nitride, and the method of forming the film is, for example, a low-pressure chemical vapor deposition method. Then, referring to FIG. 2B, define the mask layer 204 and the pad oxidation. Layer 202 and is shaped in the substrate 200 The trenches 206 and 208. A typical method is to form a patterned photoresist layer on the surface of the mask layer 204, and then dry-etch the mask layer 204, the pad oxide layer 202, and the substrate 200 in order. Then, the photoresist layer is removed to form the trenches 206 and 208 in the substrate 200. After that, please refer to FIG. 2C, and 7 of the trenches 206 and 208 are exposed. (Fill in this page)-'5 ° Printed by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Standards Paper size applicable to China National Standards (CNS) Regulation 8 (210X 297 gigabytes) A7 13 7 3372twf.doc / 〇08 5 (D) Description of the invention (d) The surface of the substrate 200 forms a lining oxide layer 210. This lining oxide layer 210 will extend to contact with the hafnium oxide layer 2 0a. Then, an insulating layer is formed on the substrate 2 0 212 'is thick enough to cover the trenches 2 06 and 2 0 8 formed in the substrate. Once the insulating layer 2 1 2 is the lowest end of the surface 2 14 is located above the larger trench 208', its height is between the cover The curtain layer 204a is between the upper edge 218 and the lower edge 22o. Then it is on the insulating layer 210 Form a protective layer 2 2 2. The method of 'typically forming the lining oxide layer 2 1 0 is a method of thermal oxidation at high temperature; and the material of the insulating layer 2 12 includes oxidized sand'. The method of forming the layer is, for example, tetraethoxy Silane (TEOS) is a reaction gas 'formed by oxidized sand using atmospheric pressure chemical vapor deposition (APCVD)' and then 'heated at a high temperature, for example, at a temperature of about 1000 ° C' for about 10 ~ In 30 minutes, in order to densify the oxide (Densificati), the insulation layer 212 made of TE0S silicon oxide is formed; the removal rate of the material of the protective layer 222 is lower than that of the insulation 餍 210, and its hardness is relatively It is higher than the slurry particles used in the subsequent chemical mechanical honing process. When the material of the insulating layer 210 is silicon oxide, the material of the protective layer 222 includes nitrided sand. Its thickness is between about 100A and 1000A. Next, please refer to FIG. 2D, and use the cover layer 204 as the termination layer. The protective layer 222 and the insulating layer 2 I2 are partially removed. For example, 'the mask layer 204a is used as a honing end layer, and the chemical mechanical honing method is used' to remove the excess protective layer 222 and the insulating layer 212 on the mask layer 204a to expose the mask layer 204a. On the surface, the insulating layers 2112a and 212b and the protective layer 222a among the trenches 206 and the trenches 201 are left. When using chemical mechanical honing, the protrusions on the surface of the element will be removed by honing, that is, the protective layer 222 and the insulating layer formed above the cover layer 204 (please read the inverse first-please fill out this page), 1 'Printed by the Consumer Standards Cooperative of the Central Bureau of Standards of the People ’s Republic of China Standards for this paper (CNS> 8-4 Regulations (2 丨 0X 297 公 #) 1 A7
A7 3372i\vf.doc/0〇S _ 五、發明説明（〇 ) 212，而位於元件表面的低窪處，即溝渠208上方之絕緣層 212,在硏磨的過程中則有硏磨速率較低於絕緣層之保護層 222的保護，故而可以防止硏磨過程中硏漿之顆粒在溝渠 之絕緣層上形成刮痕，並且避免塡充於面積較廣之溝渠208 中之絕緣層2 1 2b產生凹陷的現象。 另一方面，由於絕緣層212表面之最低端214係位於 面積較大之溝渠2〇8之上方，且其高度介於罩幕層2〇4a之 上緣218與下緣220之間，因此後續覆蓋於絕緣層212上 方之保護層222 ’亦會有一部份，即第1C圖中虛線280所 指之保護層222，介於罩幕層2〇4a之上緣218與下緣220 之間。而此部份之保護層220可在硏磨的過程中具有類似 於罩幕層204a之功效，扮演硏磨終止層之角色，使面積較 大之溝渠208其上方所形成之絕緣層212，至少被區隔爲 兩部份，即250與260，而減緩面積較大之溝渠208與面 積較小之溝渠206其二者之化學機械硏磨的差異性’進而 提昇化學機械硏磨的均勻度。 然後，請參照第2E圖，依序去除罩幕層20如、保護層 222a與墊氧化層202a，以使留在基底200之溝渠206與 208之中的絕緣層212a與襯氧化層210形成隔離區224a 與224b。典型的方法係以濕式蝕刻法，例如以熱磷酸溶液 去除氮化矽材質之罩幕層204a與保護層222a，裸露出墊 氧化層202a。其後，再利用等向性蝕刻法，例如氫氟酸溶 液浸蝕之濕式蝕刻法，或非等向性蝕刻法，例如電漿乾式 蝕刻法，以去除墊氧化層202a，而在基底200中形成隔離 區 224a 與 224b。 9 t S ® ( CNS ) A4^ ( 210X 297) (請先閱讀背而之注意事項再填寫本頁) -='6 經漪部中央標準局貝工消费合作社印製 A7 3372twi；doc/008 旧 五、發明説明（飞） 因此，本發明具有以下之特徵： 1. 可以有效地控制化學機械硏磨製程的均勻性。 2. 防止碟狀效應的發生。 3. 避免刮痕的形成。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 (誚先閱讀背雨之-意事項再填寫本頁) *·1Τ 經濟部中央標準局貝工消费合作社印製 本纸張尺度適用中國國家標準（CNS ) Λ4現梠（2丨0X 297公筇）A7 3372i \ vf.doc / 0〇S _ 5. Description of the invention (〇) 212, and the low-lying part on the surface of the component, that is, the insulating layer 212 above the trench 208, has a lower honing rate during the honing process The protection of the protective layer 222 on the insulating layer can prevent the particles of the slurry from forming scratches on the insulating layer of the trench during the honing process, and avoid the generation of the insulating layer 2 1 2b filled in the wide trench 208. Depression phenomenon. On the other hand, since the lowest end 214 of the surface of the insulating layer 212 is located above the trench 208 having a large area, and its height is between the upper edge 218 and the lower edge 220 of the cover layer 204a, The protective layer 222 ′ overlying the insulating layer 212 will also have a part, that is, the protective layer 222 indicated by the dashed line 280 in FIG. 1C is between the upper edge 218 and the lower edge 220 of the mask layer 204a. The protective layer 220 in this part can have the effect similar to the mask layer 204a during the honing process, and it can play the role of a honing termination layer, so that the larger-area trench 208 has an insulating layer 212 formed thereon, at least It is divided into two parts, namely 250 and 260, and the difference between the chemical mechanical honing of the trench 208 with a larger area and the trench 206 with a smaller area is slowed down, thereby improving the uniformity of the chemical mechanical honing. Then, referring to FIG. 2E, the cover layer 20 such as the protective layer 222a and the pad oxide layer 202a are sequentially removed, so that the insulating layer 212a remaining in the trenches 206 and 208 of the substrate 200 is isolated from the liner oxide layer 210. Zones 224a and 224b. A typical method is to use a wet etching method, such as removing the silicon nitride mask layer 204a and the protective layer 222a with a hot phosphoric acid solution, and exposing the pad oxide layer 202a. Thereafter, an isotropic etching method, such as a wet etching method using a hydrofluoric acid solution, or an anisotropic etching method, such as a plasma dry etching method, is used to remove the pad oxide layer 202a. Isolation regions 224a and 224b are formed. 9 t S ® (CNS) A4 ^ (210X 297) (Please read the precautions before filling out this page)-= '6 Printed by A7 3372twi, Shellfish Consumer Cooperative of Central Standard Bureau of Ministry of Economic Affairs; doc / 008 old V. Description of the invention (flying) Therefore, the present invention has the following characteristics: 1. The uniformity of the chemical mechanical honing process can be effectively controlled. 2. Prevent the dish effect. 3. Avoid the formation of scratches. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. (诮 Read the rain-intentions first and then fill out this page) * · 1Τ Printed on the paper by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, this paper is compliant with Chinese National Standards (CNS) Λ4 Now (2 丨 0X 297 public) )