TW396709B - Method for increasing the dynamic detecting range for image of charged couple device - Google Patents

Method for increasing the dynamic detecting range for image of charged couple device Download PDF

Info

Publication number
TW396709B
TW396709B TW87120234A TW87120234A TW396709B TW 396709 B TW396709 B TW 396709B TW 87120234 A TW87120234 A TW 87120234A TW 87120234 A TW87120234 A TW 87120234A TW 396709 B TW396709 B TW 396709B
Authority
TW
Taiwan
Prior art keywords
signal
light sensor
signal charge
ccd
vccd
Prior art date
Application number
TW87120234A
Other languages
Chinese (zh)
Inventor
Jen-Bang Gung
Tz-Ping Lin
Jr-Shr You
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW87120234A priority Critical patent/TW396709B/en
Application granted granted Critical
Publication of TW396709B publication Critical patent/TW396709B/en

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)

Abstract

The present invention discloses a technique for increasing the dynamic detecting range by using a novel solid image driving element. The solid image driving element has several photo sensors arranged in both horizontal and vertical directions to form a matrix. Several lines of vertical CCD are used for storing signal charges from photo sensor elements. The horizontal CCDs are connected with one of terminal points and vertically aligned to transmit those signal charges received from vertical CCDs to output devices. Therefore, in addition to using the exposure time Cs to modify the readout clock so as to provide extra exposure time Cx when the BLK signal is low, and illuminate the darker portion of the image, the method of the present invention also discloses a new concept of increasing both width and depth of vertical CCDs' channels and applying extra voltages on vertical CCDs to prevent those overflowing signal charges.

Description

__________ Η 7 i '發明説#( ··) 發明領域: 本發明係有關於一種驅動固態影像元件之方法,特 别是有關於一種可以增加電荷耦合裝置影像動態偵 園之方法。 八 發明背景: 近年來’電荷耦合装置影像偵測已成了電子影像攝 取等多項應用元件中最爲重要的一種。例如,攝取靜態 影像的數位相機及可以動用攝取影像的數位攝綠影機 不但可供家庭用也可用於敎育,公司行號及廣播媒體等 各種用途。這些電子影像商品由於處處充斥著商機而倍 梵注目。,也因此,如何提升影像的品質,以及感攝的 逯度的相關技術已成商家欲取得領先地位必爭之地,而 這些又和光感測器的結構’驅動電路的設計及驅動.電路 的時脈安排有著密切關係。 .經濟部中央標準局員工消費合作社印製 圖一示一傳統固態影像裝置,包括了複數個光偵測 器100伴随複數個垂直影電荷輕合裝置2〇〇(在此之後通 稱爲V C C D)以一行一行的方式形成陣列的排列方式。此 外’另有一列水平CCD 300 (在此之後通稱爲HCCD)被 安排以連接每一行VCCD的一端用以接收來自VCCD所 傳送過來的信號電荷並傳送至輸出元件400。 爲詳細説明光偵測器1 0 0和V C C D 2 0 0的連接關 係,在此以一行的光感測器100及其附接的VCCD 200 06:06 PM 2 本&:尺度適财關緖準(CNS >鐵格(21GX297公 Λ7 Η7 經濟部中央樣準扃負工消费合作社印^ 説明之。仍請參考圖一,請也一併參考圖二A,以水平 方向兩言,光感測器111的一端和VCCD 2 1 1相鄰接, 並且光感測器112的一端和VCCD212相鄰接。每一個 光感測器的另一端則與絶綠區5 0相鄰。此外,在垂直 方向,VCCD,211 則與 VCCD 212、VCCD 213、及 VCCD 214順序相鄰。並且,VCCD,2U、VCCD 212、VCCD 213、 及乂(:€0 214分别有電極乂卜¥2、¥3及¥4。且乂(:€0, 215、VCCD 216、VCCD 217、及 VCCD 218 也分别有電 極VI、V2、V3及V4。換言之,信號電荷的傳送是以 四個相位來傳送的。値得注意的是第一光感測器1 11與 第二光感測器112及第三光感測器1 1 3都是經由色彩互 捕的濾片所處理而成一個集合,因此其接收的信號電荷 性質不同。舉例言之,若第一光感測器1 1 1接收的是洋 紅色(magenta),第二光感測器 112接收的是寶藍色 (c y a η),則第三光感測器1 1 3接收的就是綠色(g r e e η ).。 其餘之光感測器則依此類推。 在攝取每一影像的影像點之前如圖二Β所示光感 測器1 00之内容首先必須做清除動作。因此,首先必須 加一高的反向偏壓大約.30V稱爲.Vh於基板(substrate) 電極VSUB以形成空乏區(depletion region)並使空乏區 擴大以觸及N-區40。此時所有之電荷將會釋放至N —基 板30。另一方面如欲開始攝取影像則VSUB的電壓就應 加得較低大约1 5 V附近稱爲v μ。如此空乏區可以形成, 用以儲存光感測器所接收的電荷,如圖二C所示。 欲讀取光感測器所接收之信號電荷時,電極須施以 06:06 ΡΜ 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公錄) (Λ讀先間讀背面之注意事項再填寫本頁) • 士^r ..... Ill-· m · T I n _ · 'V-__________ Η 7 i '发明 说 # (··) Field of the Invention: The present invention relates to a method for driving solid-state image elements, and in particular, to a method that can increase the image dynamic detection park of a charge coupled device. 8. Background of the Invention: In recent years, the image detection of a charge-coupled device has become the most important of many application components such as electronic image capture. For example, digital cameras that capture still images and digital green cameras that can capture images can be used not only for home use but also for education, company line, and broadcast media. These electronic imaging products have attracted attention because of the business opportunities everywhere. And, therefore, how to improve the quality of the image, and the related technology of sensing have become the battleground for businesses to achieve a leading position, and these are related to the structure of the light sensor and the design and driving of the driving circuit. The timing is closely related. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, a traditional solid-state imaging device, including a plurality of light detectors 100 and a plurality of vertical shadow charge light closing devices 200 (hereinafter referred to as VCCD) to The arrangement of the array is formed line by line. In addition, another column of horizontal CCDs 300 (hereinafter referred to as HCCDs) is arranged to connect one end of each row of VCCDs to receive the signal charges transmitted from the VCCDs and transfer them to the output element 400. In order to explain in detail the connection relationship between the photodetector 100 and the VCCD 2000, a row of the photo sensor 100 and its attached VCCD 200 06:06 PM 2 book &: Standard (CNS > Tiege (21GX297) Λ7 Η7 Printed by the Central Ministry of Economic Affairs and the Consumers' Cooperative Cooperative Association ^ Explained. Still refer to Figure 1, please also refer to Figure 2A, horizontally two words, light feeling One end of the detector 111 is adjacent to VCCD 2 1 1 and one end of the light sensor 112 is adjacent to VCCD 212. The other end of each light sensor is adjacent to the green area 50. In addition, in In the vertical direction, VCCD, 211 is adjacent to VCCD 212, VCCD 213, and VCCD 214 in sequence. Also, VCCD, 2U, VCCD 212, VCCD 213, and 乂 (: € 0 214 have electrodes ¥ 2, ¥ 3, respectively. And ¥ 4. And 乂 (: € 0, 215, VCCD 216, VCCD 217, and VCCD 218 also have electrodes VI, V2, V3, and V4 respectively. In other words, the transfer of signal charges is transmitted in four phases. 値It should be noted that the first light sensor 111, the second light sensor 112, and the third light sensor 1 1 3 are all processed through a color capture filter. Into a set, so the received signal charges have different properties. For example, if the first light sensor 1 1 1 receives magenta, the second light sensor 112 receives royal blue (cya η), then the third light sensor 1 1 3 receives green (gree η). The rest of the light sensors and so on. Before capturing the image points of each image, the light is shown in Figure 2B. The content of the sensor 100 must be cleared first. Therefore, a high reverse bias voltage of about .30V is called .Vh on the substrate electrode VSUB to form a depletion region and make it empty. The region is enlarged to touch the N-region 40. At this time, all the charges will be released to the N-substrate 30. On the other hand, if you want to start capturing images, the voltage of VSUB should be lowered to about 15 V, which is called v μ. This empty area can be formed to store the charge received by the photo sensor, as shown in Figure 2C. To read the signal charge received by the photo sensor, the electrode must be applied with 06:06 PM paper Standards apply to Chinese National Standard (CNS) Α4 specifications (210X297 public records) (Λ Notes between the first reading and then fill in the back of this page) • Disabled ^ r ..... Ill- · m · T I n _ · 'V-

踩--- Λ Λ 經濟部中央標準局負工消费合作社印掣 :的電壓以形成位能丼。圖2£)示對應各種時序 小和但能井深度之間的關係。纟T1的時間下,v =以一大小爲” m”之電壓,雖然在V1電極下形成—位能 井,不過,並不會有信號電荷自光感測器置放至VCCD 内,原因是有一位能牆阻擋了信號電荷的溢出。在 的時間下,Vi之電壓降至,,〇”的位準,因此在幻電極 :形成之位能井消失且位能牆更高。欲讀取信號電荷W 電極板需施以更高的電壓位準爲” h”,此時光感測器之 位能牆消失且在VI電極板下之位能井更深,因此所有 之h號電荷都被儲存在該位能井之内。 參考圖三A之波形與時序圖,用以説明使用時脈和 驅動固態影像元件如圖一和圖二之間的關係。首先 在,’A1的時間VSUB被施以一高的電壓Vh用以重置光 感測器100,然後,再施以一較小的偏壓VM用以開始 接收信號電荷。每一光感測器1 〇 〇可以提供—上限 爲’’Q”之電荷容量。因此,假如光感測器200在”A2即 飽和,爲避免信號電荷之溢出。在信號電荷飽和之前, VBLK(voltage of blanking)就必須先降至,’〇,,狀態。此時 停止光感測器之曝光。通常,在VCCD内之信號電荷並 不會被立刻讀出而是直到達,,®’,的時間對應脈衝XS(H 和XSG2才開始讀取資料》値得注意的是xSGi係事先 以反相器(未圖示)先處理過再連接至電極VI,同樣 XSG2則係事先以反相器(未圖示)先處理過再連接至電 極V 3以讀取光感測器1 1 2的信號電荷。 圖四示一以四個相位傳輸VCCD信號電荷的一示 06:06 PM 4 本紙張尺度適用中國國家標準(CNS > A4规格(21〇Χ_297公後) I 1--I ----T'li^衣-- - (資先間讀背面之注意事Js<再填将本頁) 、τ 豐 A7 B7 經濟部中夾標準局員工消費合作社印製 五、發明説明( 範例子。値得注意的是XV1也是經由反相器接至V 1例 如圖二所示之V1,用以形成位能井。當然,位能井的 深度隨電壓値大小而變化。電壓脈衝XV2、XV3和XV4 和XV1 —樣經由反相器處理信號再分别接至V2 、V3 和V4電極。在T1時間下,XVI和XV2都被施以較低 的電壓,亦即V1和V2端均接以高電壓。因此,將產 生位能井201在電極VI及V2之下,並假設其信號電 何f爲Q。在時間T2時XV2的電壓所加的電壓不變., 並且XVI升至原電壓的一半且將χν3降低—半,如此 則會有兩個較淺的位能井2 0 2和2 0 3和一較深的位能井 204存在以儲存上述之信號電荷q。換言之部分之信號 電荷已由在V 1以下位能井的區域傳送至V3電極板之 下的位能井。同.理在T3的時.間,χν 1上升至.高位準 % ” 1 ” ’因此,在其下的位能井完全消失。信號電荷則 傳送至V2及V3下的電極之下。最後在T4時間下所有 之信號電荷都已置於V3和V4電極之下的位能井區。 傳統之SON Y ICX5 8 AK晶片係以交錯的模式傳疏 信號電荷的’換言之,在第一次出現BLK於”1”狀態時 曝光而在光感測器内的信號電荷會在BLK由,,1,,狀態降 至”0”狀態的一段時間後先以奇數攔位的方式傳輸,而 在在第二次出現BLK於,’ 1,,狀態時曝光而在光感測器内 的信號電荷會在BLK由”1”狀態_至,,〇,’狀態的一段時 間後再以偶數攔位的方式傳輸,當奇數攔位和偶數攔位 兩種方式傳完後即可合併形成一個框的影像(a franie 〇f image)若所接收的係連讀之影像,則再下一次BLK變化Step on --- Λ Λ The Central Standards Bureau of the Ministry of Economic Affairs, the Consumer Cooperatives, printed the voltage: to form potential energy. (Figure 2 £) shows the relationship between the corresponding time series and small but capable well depths. Under the time of T1, v = a voltage of “m” size, although a potential energy well is formed under the V1 electrode, however, no signal charge is placed in the VCCD from the photo sensor, because An energy wall prevents the signal charge from overflowing. In the time, the voltage of Vi drops to the level of 0, so the phantom electrode: the formed potential energy well disappears and the potential energy wall is higher. To read the signal charge, the W electrode plate needs to be higher. The voltage level is "h". At this time, the potential energy wall of the light sensor disappears and the potential energy well below the VI electrode plate is deeper, so all h-number charges are stored in the potential energy well. Refer to Figure 3 The waveform and timing diagram of A are used to illustrate the relationship between the use of the clock and the driving of the solid-state image element as shown in Figures 1 and 2. First, at time 'A1, VSUB is applied with a high voltage Vh to reset the light. The sensor 100 is then applied with a smaller bias VM to start receiving signal charges. Each photo sensor 100 can provide a charge capacity with an upper limit of "Q". Therefore, if the light sensor 200 is saturated at "A2", in order to avoid the overflow of signal charge. Before the signal charge is saturated, VBLK (voltage of blanking) must first drop to the state of '0,'. At this time, the light sensor is stopped. The exposure of the measuring device. Usually, the signal charge in the VCCD is not read out immediately, but it does not start until the time corresponding to the “,” ′, corresponding to the pulse XS (H and XSG2 start to read the data. ”Note that xSGi It is processed by an inverter (not shown) before being connected to electrode VI. Similarly, XSG2 is processed by an inverter (not shown) before being connected to electrode V 3 to read the light sensor. The signal charge of 1 1 2. Figure 4 shows the transmission of VCCD signal charge in four phases 06:06 PM 4 This paper size applies to Chinese national standards (CNS > A4 specifications (21〇 × _297)) I 1- -I ---- T'li ^ 衣--(Notes on the back of Zi Xianjian Js < fill in this page again), τ 丰 A7 B7 Printed by the Consumer Standards Cooperative of the Bureau of Standards and Standards of the Ministry of Economic Affairs Explanation (Example. It should be noted that XV1 is also connected to V1 via the inverter, such as V1 shown in Figure 2. In order to form a potential energy well. Of course, the depth of the potential energy well varies with the magnitude of the voltage. The voltage pulses XV2, XV3 and XV4 and XV1 are processed through the inverter and connected to the electrodes V2, V3 and V4 respectively. At T1 Under time, both XVI and XV2 are applied with a lower voltage, that is, both V1 and V2 terminals are connected with a high voltage. Therefore, a potential energy well 201 will be generated below the electrodes VI and V2, and it is assumed that the signal power is f Is Q. The voltage applied to the voltage of XV2 is unchanged at time T2, and XVI rises to half of the original voltage and reduces χν3 to -half, so there will be two shallow potential energy wells 2 0 2 and 2 0 3 and a deep potential energy well 204 exist to store the above-mentioned signal charge q. In other words, part of the signal charge has been transferred from the area of the potential energy well below V 1 to the potential energy well below the V3 electrode plate. The same. At the time of T3, χν 1 rises to a high level% "1" "Therefore, the potential energy well below it completely disappears. The signal charge is transferred to the electrodes under V2 and V3. Finally at time T4 All the signal charges have been placed in the potential well area under the V3 and V4 electrodes. The traditional SON Y ICX5 8 AK chip system The staggered pattern spreads the signal charge 'in other words, when the first occurrence of BLK in the "1" state is exposed, the signal charge in the photo sensor will be in the BLK from, 1, 1, and the state drops to the "0" state After a period of time, it is transmitted as an odd block, and in the second occurrence of BLK in the state of '1,', the signal charge in the light sensor will be exposed from the "1" state in BLK_ to ,, 〇, 'state will be transmitted in an even number of blocks after a period of time. When the two methods of odd number and even number are transmitted, they can be combined to form a frame image (a franie 〇f image). If the received serial read image, the next BLK change

07:28 PM ----------衣— Λ請先M讀背面之注意事項一i填寫本頁) 訂-07:28 PM ---------- Clothing — ΛPlease read the notes on the back first-fill in this page) Order-

本紙張尺度適用中國國家標準(CNS ) ( 210X 297公釐) 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明() 時再輪替爲奇數攔位的傳輸的方法。以下將先説明奇數 攔位的傳輸法。 請同時參考圖三A及圖一,首先,如前所述VSUB 先加以高逆向偏壓以清除光感測器1 〇〇的内容。然後曝 光開始,假如光感測器至多可以曝光c s的時間,則B L K 信號此時就必須降至〇以免彳s號電荷的溢出。假設第 一光感測器1 11已接收的信號爲Q1 1,第二光感測器1 1 2 已接收Q12的信號,第三光感測器1 1 3则接收Q 1 3的 信號電荷,光感測器1 14接收Q14 ,等等。値得 注意的是,如前所述Q13、Q12和Qii收的信號性質不 同,這是因爲這些•光感測器係以不同顏色的濾片過遽而 得到不同性質的信號電荷的,即三個光感測器形成一 組。一般而言,僅管BLK已下降至”〇”,但上述之信號 電荷並不被立即讀出至與上述光感測器相連接的 VCCD,而是在Β1和Β2時間才分别讀出。 圖三Β示局部放大(即圖三Α中的區域500)讀出信 號電荷及以奇數攔位傳送之脈衝時脈。在此仍以一行之 光感測器和其所相連接的VCCD來説明其信號電荷的 接收和傳送。在”B 1 ”時間,讀取訊號脈衝XSG1用以讀 取信號電荷Q11,並存入 VCCD 211的位能井内,(在 此以及往後,,[…],’表示一位能井),Q12和Q13則分别存 入VCCD [213]和VCCD [215]内。値得注意的是VccD 211和VCCD 2 15都是和XV 1的電極端相接eyCCD 212 和216則分别接至XV2。 對於奇數攔位的傳送,則由’’B3”時間開始,此時 07:28 PM 6 本紙張尺度適用中國國家標準(CNS ) A4規格(2丨〇父297公釐) ---------^-裝— (嘴先,聞讀背面之注意事項苒填寫本頁) -訂This paper size applies to the Chinese National Standard (CNS) (210X 297 mm). Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. A7 B7 V. Description of the invention (). The transmission method of the odd block will be explained first. Please refer to FIG. 3A and FIG. 1 at the same time. First, as described above, VSUB is first applied with a high reverse bias to clear the content of the photo sensor 100. Then the exposure starts. If the light sensor can be exposed for at most c s, the B L K signal must be reduced to 0 at this time to avoid the overflow of the 彳 s charge. Assume that the signal received by the first light sensor 1 11 is Q1 1, the second light sensor 1 1 2 has received the signal of Q12, and the third light sensor 1 1 3 receives the signal charge of Q 1 3, Light sensor 1 14 receives Q14, and so on. It should be noted that the signal properties received by Q13, Q12, and Qii are different, as described above. This is because these light sensors use different color filters to obtain signal charges of different properties. The light sensors form a group. Generally speaking, as long as the BLK has fallen to "0", the above-mentioned signal charges are not immediately read out to the VCCD connected to the above-mentioned light sensor, but are read out separately at time B1 and B2. Fig. 3B shows a partial magnification (i.e., area 500 in Fig. 3A) of the signal charge read out and the pulse clock transmitted with an odd number of stops. Here, a line of light sensors and its connected VCCD are used to illustrate the reception and transmission of its signal charge. At “B 1” time, the read signal pulse XSG1 is used to read the signal charge Q11 and is stored in the potential energy well of VCCD 211 (here and after, […], 'represents one energy well), Q12 and Q13 are stored in VCCD [213] and VCCD [215], respectively. It should be noted that both VccD 211 and VCCD 2 15 are connected to the electrode terminals of XV 1 and eyCCD 212 and 216 are connected to XV2 respectively. For the transmission of odd-numbered stops, it will start from "B3" time, at this time 07:28 PM 6 This paper size applies the Chinese National Standard (CNS) A4 specification (2 丨 〇 parent 297 mm) ------ --- ^-装 — (Mouth first, notes on the back of reading 苒 Fill in this page) -Order

經濟部中央標準局負土消费合作社印製 A 7 B7 五、發明説明4 ..) XVI、XV2和XV3都是在狀態”〇”但XV4則在狀態”1”, 因此,Q 11加入到Q 1 2然後存到VC CD [2 1 1、2 1 2和2 1 3 内]。在’’B4”的起間,XVI和XV4在”1”狀態,而XV2 和XV3在狀態,因此Q1 1+Q12已轉移至VCCD [212 和2 13]。在在”B5”的起間僅XVI是在”1”狀態,XV2、 XV3和XV4俱在”0”狀態,因此,Q1 1+Q12已轉移至 VC CD [212、213和214]内。接著,在在”B 6”的時間, Q1 1+Q12已轉移至VCCD [213、214]内。在”B7”的時間 間下再傳送至VCCD [213、214和215]内,同理可推, 在”B8”的時間,當Ql 1和Q12進到VCCD[214和215] 的同時Q13 + Q14則已轉移至VCCD [218和219]内,同 時,最鄰近水平電荷耦合裝置HCCD 300的兩列將先被 置入HCCD 300内,再以兩個相位H1和H2傳送。信號 電荷的傳送和先前所述之VCCD相同。最後,一 0.5水 平線攔位1對應最後兩列的光感測器,而攔位3則對應 倒數第3和第四攔位之光感測器内的信號電荷資料。 偶數攔位的輸出請參考圖三C。當下一個BLK由”0” 升至”1”時,同樣的由VSUB脈衝由高變低(即15V)時, 曝光,信號電荷 Ql 1、Q12、Q13,...,分别位於 VCCD[21 1],[213],[215],...,内準備被傳送。在”Cl” 時間,XVI、XV3、XV4皆在”0”狀態,而XV2在”1”狀 態。因此,Ql 1存在VCCD [21 1]而Q12、Q13,則混合 而加入 VCCD [213、214、和 21 5]内。在 C2 時間,XVI、 XV4在,,0,,狀態,XV2、XV3在”1”狀態。因此Ql 1仍然 留在 VCCD [211]内,而 Q12、Q13 則前進至 VCCD [214 06:06 PM 7 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ---------oil — (讀七閱讀背面之注意事項再填5ΪΤ本頁) 訂. 經濟部中央標隼局貝工消费合作社印製 Λ7 Β7 五、發明説明 和215]内。在”C3”時間,由於XV3在狀態”1”,而XVI,、 XV2和XV4在狀態,’〇,,。因此,Ql 1被傳到VCCD [21 1 和212]内,而Q12則和Q13共存於VCCD [214、215 和216]内。在另一時間”C4”,XVI、XV2在狀態,,〇,,但 XV3、XV4則在狀態”1”因此,Ql 1仍在VCCD [21 1和 212]内,而Q12則和Q13共存於VCCD [21 5和216]内。 依此類推’最接近複數個HCCD的光感測器内的信號電 荷將第一個被置於HCCD内並輸出0.5條水平線,攔位 2其對應最靠近HCCD的一列光感測器的輸出。而攔位 4則對應次二和第三靠近HCCD的光感測器的輸出,如 果共有偶數列的光感測器的話。 根據以上之傳送信號電荷的方法,可以發興傳統方 法在B i皇鱼時,光感測器接受曝光.l待—B丄K降―至 低電;g後便停m,並—於—經—歷 段時間後—鲁—出一倍齋_,一 再輸出攔1、2、3、4…,等攔位的信號,如此將有部分 影像信息遭受.因光感測器之飽和問題而損失,則影像有 失眞的問題。分匕如—接—政A物光有特别暗的影像 存在於一般平均的亮度之中,爲防止較亮處信號電荷會 溢出則上述之特别暗的影像將會曝光不足,反之,則較 亮處主產生因信號電荷溢出而糊掉的問題。上述問題極 待一發明以解決。 發明目的及概怵: 本發明4 一目的係用以解決傳統驅動,固態影像元件 有曝光不足而使得影像中較暗區域亮^題'-- 06:06 ΡΜ Λ _________ 8 本紙張尺度適用中國國家標準(CNS ) Λ4規格(210x297公發) (請1間讀背而之注意事項再填弈本頁)Printed by the Central Standards Bureau of the Ministry of Economic Affairs of the Consumers' Cooperative Association A 7 B7 V. Invention Description 4 ..) XVI, XV2 and XV3 are all in the state “〇” but XV4 is in the state “1”, so Q 11 is added to Q 1 2 Then save to VC CD [2 1 1, 2 1 2 and 2 1 3]. In the beginning of "B4", XVI and XV4 are in the "1" state, while XV2 and XV3 are in the state, so Q1 1 + Q12 has been transferred to VCCD [212 and 2 13]. Only in the beginning of "B5" XVI is in the "1" state, and XV2, XV3, and XV4 are in the "0" state. Therefore, Q1 1 + Q12 has been transferred to the VC CD [212, 213, and 214]. Then, at the time of "B 6" , Q1 1 + Q12 has been transferred to VCCD [213, 214]. It will be transferred to VCCD [213, 214, and 215] within the time of "B7", and similarly, at "B8", when While Ql 1 and Q12 enter VCCD [214 and 215], Q13 + Q14 have been transferred to VCCD [218 and 219]. At the same time, the two columns closest to the horizontal charge coupled device HCCD 300 will be placed in HCCD 300 first. , And then transmit in two phases H1 and H2. The transfer of signal charge is the same as the VCCD described previously. Finally, a 0.5 horizontal line stop 1 corresponds to the last two columns of light sensors, and stop 3 corresponds to the penultimate third And the signal charge data in the light sensor of the fourth stop. For the output of the even stop, please refer to Figure 3C. When the next BLK rises from "0" to "1", the VSUB pulse changes from high to high. (Ie 15V), when exposed, the signal charges Ql1, Q12, Q13, ... are located in VCCD [21 1], [213], [215], ..., respectively, and are ready to be transmitted. In "Cl" Time, XVI, XV3, XV4 are all in the "0" state, and XV2 is in the "1" state. Therefore, Ql 1 exists in the VCCD [21 1], and Q12 and Q13 are mixed and added to the VCCD [213, 214, and 21 5 ]. At time C2, XVI, XV4 are in, 0 ,, state, XV2, XV3 are in "1" state. Therefore Ql 1 remains in VCCD [211], while Q12, Q13 advance to VCCD [214 06 : 06 PM 7 This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) --------- oil — (Read the notes on the back of the reading and fill in the 5ΪΤ page) Order. Ministry of Economic Affairs Printed by the Central Bureau of Standardization, Shellfish Consumer Cooperative Λ7 B7 V. Invention Description and 215]. At the time of "C3", because XV3 is in the state "1", and XVI ,, XV2 and XV4 are in the state, '0,'. Therefore, Ql 1 is transmitted to VCCD [21 1 and 212], while Q12 and Q13 coexist in VCCD [214, 215, and 216]. At another time, "C4", XVI and XV2 are in the state ,, 0, , But XV3, XV4 State "1" Thus, Ql, a still VCCD [21 1 and 212] inside, and Q12 and Q13 to coexist in the VCCD [21 5 and 216] inside. By analogy, the signal charge in the light sensors closest to the plurality of HCCDs will be first placed in the HCCD and output 0.5 horizontal lines. Block 2 corresponds to the output of the array of light sensors closest to the HCCD. Block 4 corresponds to the output of the second and third light sensors close to the HCCD, if there is an even number of light sensors. According to the above method of transmitting the signal charge, the traditional method can be developed when the B i kingfish, the light sensor accepts the exposure. L wait-B 丄 K drops-to low power; after m, stop m, and- After-a period of time-Lu-a double fast, and repeatedly output signals such as block 1, 2, 3, 4, ..., so that some image information will suffer. Due to the saturation problem of the light sensor, Loss, the image is lost. Divide-to-connect-policy A. There is a particularly dark image of object light in the general average brightness. To prevent signal charges from overflowing in the brighter areas, the above-mentioned extremely dark images will be underexposed, otherwise, they will be brighter. The owner has a problem that the signal charge overflows and blunts. The above-mentioned problems await an invention to be solved. The purpose and summary of the invention: The first purpose of the present invention is to solve the traditional drive. The solid-state imaging elements have underexposure and make the darker areas in the image brighter. ^ '' '06:06 PM Λ _________ 8 This paper standard is applicable to the country of China Standard (CNS) Λ4 specification (210x297) (please read one note and fill in this page)

Λ _ Β7 '--- ------ ---- I , _ 五、發明説明-(Ο 本發明之另一目的係用以解決傳統驅動固態影像元 件之受限於光感測器元件之信號電荷承載容量而不易提 供影像解析度的問題。 本發明揭露一種新的驅動固態影像元件以增加動態 範固之技術。固遽影像元件包含有複數個光感測器元件以 水平和垂直方向排列成矩陣 '除此之外,複數行的垂直 CCD伴隨光感測器陣列排列用以儲存接收來自光感測器 元件的信號電荷,並且一列之水平CCD則接至每一行垂 直CCD的一終端用以將接收自垂直CCD的信 迭 至輸出裝置。本發明之方法是利用除—般傳統^法之曝光 時間CS修改讀出之時脈使得BLK信號低電位的時間可以 額外曝光CX的時間以使得影像中較暗的部份也可以得到 增強亮度的方法,同時本發明也揭露以加大垂直之 通道寬度及深度及以加強在垂直CCD之電壓以提高位能 井深度用以防止信號電荷溢出的觀念。 门 圖示簡單説明: 經濟部中央標隼局員工消費合作社印製 I— il-^— 111·! --1 I ....... - I— i.,/1 士I------ !;?. 〈聞讀背雨之注意15項鼻娘寫本剪) 本發明的較佳實施例將於往後之文字中輔以説明圖形 做更詳細的闡述: 圖一示依據SOfY—JimMAK一^器及 VCCD之簡要佈局圖; ―一 展三晶片之=先感測器及 一 vcci_nf鄰接關係圖; &quot; ' 圖二B示依據SONY IC058AK晶.1之,备感測器之 06:06 PM 9Λ _ Β7 '--- ------ ---- I, _ V. Description of the invention-(0 Another object of the present invention is to solve the limitation of the conventional solid-state image element driven by the light sensor The signal charge carrying capacity of the device is not easy to provide the image resolution. The present invention discloses a new technology for driving solid-state image devices to increase dynamic range. The solid-state image device includes a plurality of light sensor elements for horizontal and vertical Directions are arranged in a matrix. In addition, a plurality of rows of vertical CCDs are arranged with the light sensor array to store the received signal charges from the light sensor elements, and one column of horizontal CCDs is connected to one of each row of vertical CCDs. The terminal is used to superimpose the signals received from the vertical CCD to the output device. The method of the present invention uses the conventional exposure time CS to modify the readout clock so that the time of the BLK signal low potential can additionally expose the time of CX In order to make the darker part of the image also obtain the method of enhancing the brightness, the present invention also discloses to increase the vertical channel width and depth and to increase the voltage in the vertical CCD to increase the potential well depth It is used to prevent the concept of signal charge overflow. The door icon simply explains: Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economy I— il-^ — 111 ·! --1 I .......-I— i ., / 1 士 I ------!;?. <Five notes of reading the rain, 15 items of nose girl cutting scissors) The preferred embodiment of the present invention will be supplemented by explanatory graphics in the following text. Detailed explanation: Figure 1 shows a simplified layout diagram based on SOfY-JimMAK device and VCCD; ―One exhibition and three chips = first sensor and a vcci_nf adjacency relationship diagram; &quot; 'Figure 2B shows a crystal based on SONY IC058AK .1, Ready Sensor 06:06 PM 9

本紙張尺度適用中國國家標準(CNS ) A4規格(210X 29*M&gt;¥T 經濟部中央標準局員工消費合作社印製. Λ7 B7 五、發明説晛(…) 空乏區和y„s u b的關係圖; ....... ........... ........-............... 圖二C示依據SONY IC058A—光:感測器之 ------------------- -------------. 空乏區和V s 的關係圖; ( 圖二D示,依據SONY IC058AK晶片之二器及 ++/ ; ·-·—^ ..... 一 vl·CD之位能井深和所加之電壓大小之關係圖。 _· -— —1 . ' 圖兵—,么」吏驅韌SONY ICO5 8AK —晶4--時一脈一和―备—宣—極板 所脈衝的闕_..優.圖; 圖三B示圖三4一之局部放〜大用—I説-明一奇-數攔一位J專」[复虞:, 一丨一——广一一 電荷色時脈圖; 圖三—~G-示胤三Λ之局部放大用以説明-偶…數〜攔-位像信、號 電荷的晚應I ; __ —凰」1„辟顯示4個相位之-¥€-&amp;0傳遗信號電荷的時膦 圖; 圖五 Α示依據本發明之Jt脈用以讀出及傳遞信踩電 荷的時脈圖.; 圖五B示依據本發明之時脈讀出信號電荷再以奇數 . ....-........... ........ &quot;&quot;......—.— 栅位聲遞-的—時脈圖; 圖五C示务據本#明之時脈讀出4言號電荷再以偶數 襴 1:¾ ί信號-電荷的時脈圖; /圖六Α示依據傳統方法之曝光曲線;及 圖六 B示依據本發明之方法之曝光曲線,影像中 較灰也幕獲得滿〜意之亮度。 .....— 〜.一〆 — _ 發明詳細説明: 06:06 PM 10 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) —^ϋ mu mu SI- 1 -----ne\ y f m. (請^-閲讀背面之注意事項再填寫本頁) -β # 五、發明説明() 一如於發明背景所述,當影像包含強對比區和弱對 比區時,欲獲得較佳之解析度就必須使得整體影像之強 度變弱,否則,當影像中之灰暗處也呈現適當亮度時, 部分之影像信息就必須犧牲’這是因光感測器的容量是 —個限定値的緣故,以外部電路放大信號,也會使雜訊 同步放大,本發明將提出一解決上述問題的方法。 以一較佳的實施例而言,本發明使用和發明背景所 述之影像晶片,亦即同爲S0NY IC05 8AK,因此,光感 測器和VC CD的佈局和圖一是相同的,光感測器和 V C C D的結構與相對位置也同於圖二。 經濟部中央標準局員工消費合作社印製 不過,如圖五A所示,本發明的時脈則有别於傳统 方法。首先,在第一次BLK在”1’’狀態時,以約30伏的 電壓先清除所有之光感測器1 00内的信號電荷。然後再 開始曝光。在BLK由高電位降至低電位時假設已曝光 c S時_間。此時,光感測器1 1 1、1 1 2、1 1 3和1 1 4已分别 累積了 Qll、Q12、Q13和Q14的信號電荷。和傳统方 法不同的是,在BLK由高電位降至低電位時,即需先 使XVI和XV3處於”〇”,以便形成位能井。之後,隨 即以加在VCCD 21 1和21 3,…,等奇數VCCD之xSG1 和XSG2脈衝依序讀取光感測器(即XI和XV3處於,,〇,, 位準)以讀取光感測器内的信號電荷,這些讀出之信號 電荷Q1卜Q12、Q13和Q14,….,將分别存入VCCD 211、 2 1 3、2 1 5和2 1 7,...,的位能井内,以便使上述之光感 測器可以繼續再接收信號電荷。此後,在第一小段時間 11内,上述之光感測器所再累積的電.,爲q 1 11、q 1 2丨、 11This paper size applies to China National Standard (CNS) A4 (210X 29 * M &gt; ¥ T Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. Λ7 B7 V. Inventory 晛 (…) The relationship between the empty area and y „sub ; ................................................................................................................. 2C shows according to SONY IC058A —Light: of the sensor ------------------- -------------. The relationship between the empty area and V s; ( Figure 2D shows the relationship between the depth of the well depth and the applied voltage according to the second device of SONY IC058AK chip and ++ /; ·-· — ^ ..... . "图 兵 ——, 么" Official drive tough SONY ICO5 8AK — crystal 4--time one pulse one and “preparation — Xuan — plate” pulse pulse __ .. excellent. Figure; Figure 3B shows Figure 3 4I Partially placed ~ great use-I said-Ming Yi Qi-Shuai one J Zhuan "" [Fu Yu :, Yi 丨 Yi-Guang Yi Yi charge color clock diagram; Figure III-~ G-shown three Λ The partial enlargement is used to explain the-even ... number ~ block-bit image signal, the late response of the number of charges I; __ —Phoenix "1„ Display 4 phases of-¥ €-&amp; 0 time signal phosphine Figure 5A shows the Jt pulse used in accordance with the invention Clock diagram of outgoing and transmitting signal step charges; Figure 5B shows the clock read signal charges according to the present invention and then odd numbers. ....-.............. .... &quot; &quot; ......—.— Gated Acoustic Transmitting-Clock Diagram; Figure 5C shows the data according to the book # 明 之 钟 Read 4 electric charges and then use an even number 襕 1 : ¾ signal-charge clock diagram; / Figure 6A shows the exposure curve according to the traditional method; and Figure 6B shows the exposure curve according to the method of the present invention. The grayer part of the image also obtains satisfactory brightness. .....— ~. 一 〆— _ Detailed description of the invention: 06:06 PM 10 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) — ^ ϋ mu mu SI- 1 ---- -ne \ yf m. (please ^-read the notes on the back and fill out this page) -β # 5. Description of the invention () As stated in the background of the invention, when the image contains strong contrast areas and weak contrast areas, To obtain a better resolution, the intensity of the overall image must be weakened. Otherwise, when the dark places in the image also show appropriate brightness, some of the image information must be sacrificed. This is because the capacity of the light sensor is a limit For the sake of stability, amplifying a signal with an external circuit will also synchronously amplify noise. The present invention will propose a method to solve the above problems. In a preferred embodiment, the present invention uses the image chip described in the background of the invention. That is, the same is SONY IC05 8AK. Therefore, the layout of the light sensor and VC CD is the same as that in Figure 1. The structure and relative position of the light sensor and VCCD are also the same as in Figure 2. Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economics However, as shown in Figure 5A, the timing of the present invention is different from the traditional method. First, when the BLK is in the "1" state for the first time, the signal charges in all the light sensors 100 are first cleared with a voltage of about 30 volts. Then, the exposure is started. The BLK is reduced from a high potential to a low potential It is assumed that c S has been exposed at this time. At this time, the light sensors 1 1 1, 1 1 2, 1 1 3, and 1 1 4 have accumulated the signal charges of Qll, Q12, Q13, and Q14, respectively. And the conventional method The difference is that when BLK is reduced from high potential to low potential, XVI and XV3 need to be at "0" first to form a potential energy well. Then, it is added to VCCD 21 1 and 21 3, ..., and other odd numbers. The xSG1 and XSG2 pulses of the VCCD sequentially read the light sensors (ie, XI and XV3 are at the,, 0 ,, level) to read the signal charges in the light sensors. These read signal charges Q1 and Q12, Q13 and Q14, ..., will be stored in the bit energy wells of VCCD 211, 2 1 3, 2 1 5 and 2 1 7, ..., respectively, so that the above-mentioned light sensor can continue to receive signal charges. After that, in the first short period of time 11, the electricity accumulated by the above-mentioned light sensor is q 1 11, q 1 2 丨, 11

07:22 PM 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ______ _B7 五、發明説明() qlh、和q14i,’…,並爲XSG1和XSG2脈衝依序讀 出。並儲存於VCCD 211、213、215和217,…,的位 flb井内。在第二小段時間t2内,上述之光感測器再累 積的電%爲 qll2、ql22、ql32、和 ql42,並存入 vcCD 2 1 1、2 1 3、2 1 5和2 1 7的位能井内。同理,在最後一小 段時間t9,假設係第九小段時間内,上述之光感測器所 累積的電荷爲ql 19、ql29、ql39、和ql49。一般而言, 每一小段時間約爲10-100 μ3,典型値爲63.5μ3,因此, 由於上述之各小時段讀出至各個VCCD後並未將信號 電荷往下傳,也因此電荷皆累積於各個VCcD通道上以 保持各個像素之信號的完整性。換言之,可以加強較弱 之對比處之亮度。假設,在VCCD 21 1之總電荷爲Q1 1τ, Q11t =Qll+ qll!+ qii 2 + ..+ qli9。同理,vcCD 213 之07:22 PM This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) ______ _B7 V. Description of the invention () qlh, and q14i, '..., and read out for XSG1 and XSG2 pulses in sequence. And stored in the VCCD 211, 213, 215, and 217, ..., bit flb wells. In the second short period of time t2, the electricity percentages accumulated by the aforementioned light sensors are qll2, ql22, ql32, and ql42, and are stored in the bits of vcCD 2 1 1, 2 1 3, 2 1 5 and 2 1 7 Noi. Similarly, in the last short period of time t9, it is assumed that it is the ninth short period of time, and the charges accumulated by the above-mentioned photo sensors are ql 19, ql29, ql39, and ql49. Generally speaking, each short period of time is about 10-100 μ3, and the typical value is 63.5 μ3. Therefore, since the signal charge is not transmitted to the VCCD after the above-mentioned hours, it is also accumulated in the charge. On each VCcD channel to maintain the signal integrity of each pixel. In other words, the brightness at weaker contrasts can be enhanced. Assume that the total charge at VCCD 21 1 is Q1 1τ, and Q11t = Qll + qll! + Qii 2 + .. + qli9. Similarly, vcCD 213

總電% 爲 Q12T,Q12T =Q12+ ql2i+ ql22 +…+ q.l29〇VCCD 經濟部中央標準局員工消費合作社印製 215之總電荷爲q13t,vCCD 217之總電荷爲q14t。値 得注意的是,前述之額外曝光時間c X必須滿足關係式 (Cs + Cx)/Cs&lt; n,其中以上述之實施例,cx =上述第一小 段至第九小段之時間和,n = VC CD之電荷容量和光感 測器之電荷容量比。換言之,Cx要小於(η-1) X Cs以避 免信號電荷的溢出》這一部分可利用一乘法器來完成計 算額外曝光的時間計算。其次,要注_意的是,需確保在 BLK由低至高時,所有在VCCD内的信號電荷可以傳輸 完畢。 在最後一小段讀取信號電荷後即,,a9”時間,後VCCD 便可以下傳,奇數攔位的傳遞方法,和圖三之前所述之 Q7:22 PM _ 12 本紙張尺度適用中國國家標準(CNS ) M規格(2丨0X29?公釐) 經濟部t,央標準局員工消费合作社印製 _ A7 ______ H7The total electricity% is Q12T, Q12T = Q12 + ql2i + ql22 +… + q. 1290VCCD The total charge printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 215 is q13t, and the total charge of vCCD 217 is q14t. It should be noted that the aforementioned additional exposure time c X must satisfy the relationship (Cs + Cx) / Cs &lt; n, where in the embodiment described above, cx = the time sum of the first to ninth segments, n = The charge capacity ratio of VC CD to the charge capacity of the light sensor. In other words, Cx should be less than (η-1) X Cs to avoid the overflow of signal charge. This part can use a multiplier to complete the calculation of the time to calculate the additional exposure. Secondly, it should be noted that it is necessary to ensure that when BLK goes from low to high, all signal charges in the VCCD can be transferred. After reading the signal charge in the last segment, that is, a9 ”time, the VCCD can be transmitted afterwards, the transmission method of the odd number of stops, and Q7: 22 PM _ 12 described in Figure 3. This paper standard applies to Chinese national standards (CNS) M specification (2 丨 0X29? Mm) Printed by the Ministry of Economic Affairs, Central Consumers ’Cooperatives_ A7 ______ H7

五、發明説明..(.J 方法相似,請參考圖五B(爲圖五A區域1 〇〇〇之局部放 大圖),Q11t+Q12t 各别存入 VCCD [211] 、VCC [213] 後依以下的順序移動而變化:VCCD —VCCD [211、212 和 213]— VCCD [212 和 213] — VCCD [ 212、213 和 214]-&gt;VCCD [213、214]-&gt;[213、214、215]。Q13T+ Q14T. 各别存入VCCD [215]和VCC [2 17]後依以下的順序移 動而變化:VCCD —VCCD [215、216 和 217]— VCCD [216 和 217] — VCCD[216、217 和 218]4 VCCD [217 和 218]。其餘類推。當 Q1 It + Q12T 存入 VCCD[ 213、214、 和215]之位能井内的同時Q13T+Q14T則存入VCCD [2 1 7、2 1 8和2 1 9]。同理,最後兩光感測器内的信號電 荷被讀出並往下傳至HCCD,以兩個時脈H1和H2交替 而前進至輸出裝置而輸出0.5水平線之奇數攔位1。在 本實施例中最先被送出之信號電荷係位於最後兩列光 感測器的1 1 7及11 8内容。然後,再輸出另兩列11 5和 11 6光感測器的内容以做爲攔位3。 圖五C顯示偶敫攔位的傳輸和前述之圖五B所描述 的相類似,Q 1 1 τ 、Q 12T和 Q1 3τ分别存入 V[2 1 1 ]、 VCCD[213]和VCCD[215]後依以下的順序移動Q12T而 變化:Q12T + Q13T 由 VCCD [213、214、215]4 VCCD [214 和 215]aVCCD [214、215 和 216]-»VCCD[215 和 216] » 且當 Q12T + Q13T 對在 VCCD[215 和 216]時 Q11T 移動至VCCD[21 1和212],依此原則,信號電荷利用 VCCD電位的變化將移動而進入HCCD並同樣以兩個時 脈H1和H2交替而前進至輸出裝置而輸出0.5水平線之 _06:06 PM__13 ^紙張尺度適用中爾國家標準(CNS ) Λ4規格(210X 297公釐) ---„-----0¾.-- (讀I聞讀背面之注意事1再填31本頁) ,ιτ .Φ. 嫜濟部中央搞準扃貝工消费合作社印製 2數攔位2、4、6,---。在本實施例中最先輸出的爲包 3光感測器1 1 8之最後一列光感測器,攔位2,然後是 0含光感測器1 1 6和1 1 7的兩列光感測器内的電荷,攔 位4。 値得注意的是爲改變時序以使得動態範園增加且不 致於產生仏號電奇溢..出的問題有兩個附帶的措施最好 也—併使用: (1) 增加每一個VC CD暫存器200之通道長度和深 度用以增加信號電荷的承載量。 (2) 增加vcCD暫存器之位能井深度,這可以以增 加驅動VCCD之電壓値來獲得,以一較佳的實施 例而言,可以施加的電壓約爲15_3〇 v。 本發明優於習知技術之處可以由圖6A和6B的比較 而更清楚了解到,圖六A係依據習知技術之曝光曲線, 虚線線1 0係光感測器之飽和値,實線1 2係最亮處之曝 光量和時間的關’曝光Cs時間即會飽和,實線1 3則係 較暗處之曝光曲線。實線i 4係相對更暗之處之曝光曲 線’很明顯的,在光感測器飽和時若停止曝光,較灰暗 處之亮度會有不足的問題。圖六B則顯示依據本發明之 方法貫線15’ 16及17依序爲愈來愈暗區的曝光曲線, 可以明顯的看出由於可以增加Cx的曝光時間而不需擔 心較亮處的信號電荷溢出的問題,因此可以輕易的拉高 影像中灰暗處之亮度。 本發明僅以較佳實施例説明如上,並非用以限定本發 明之申請範園;凡熟習該項技藝人士,在未脱離本發明之 06:06 PM “ _— ________ 14 本紙張尺度適用中國國家橾準(CNS ) A4規格(2丨〇χ297^釐) ---:-----1MM 裝-- (請先閱讀背面之注意事項再填莴本頁) 訂 •Φ A7 B7 五、發明説日月() 精神下,當可作些許改變或修飾,其專利保護範園均應包 含在下述之申請專利範圍内。例如本發明係以 SONY ICX0 5 8 AK爲例,但並非限定本發明只適用該晶片而已, 且雖然在本發明是用四個相位變換來傳輸信號電荷,事實 上也可應用於只有三個相位變換的晶片,即與傳輸的方式 無闕。概本發明主要精神係在BLK由高電位降至低電位 時即予以讀取信號電荷,此時並沒有電荷被傳遞。 —i I- H -I - - ml =_ι·-! SI— I....... - —- -I - ---1- -Hi - - - I—--ejHI 1! ·-,]? - -- -- In r 一 i ‘ 丨气 線' 、請先_閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 06:06 PM_15_ 本紙張尺度適用中國國家標準(CNS ) A4規格(2i〇X297公釐了V. Description of the invention .. (.J method is similar, please refer to Figure 5B (a partial enlarged view of area 1000 in Figure 5A)), Q11t + Q12t are stored in VCCD [211] and VCC [213] respectively. It changes in the following order: VCCD — VCCD [211, 212, and 213] — VCCD [212 and 213] — VCCD [212, 213, and 214]-&gt; VCCD [213, 214]-&gt; [213, 214] , 215]. Q13T + Q14T. After they are stored in VCCD [215] and VCC [2 17], they move in the following order and change: VCCD — VCCD [215, 216 and 217] — VCCD [216 and 217] — VCCD [ 216, 217, and 218] 4 VCCD [217 and 218]. The rest can be deduced by analogy. When Q1 It + Q12T is stored in the VCCD [213, 214, and 215], Q13T + Q14T is stored in the VCCD [2 1 7 , 2 1 8 and 2 1 9]. Similarly, the signal charges in the last two photosensors are read out and passed down to the HCCD, alternately advance to the output device with two clocks H1 and H2 and output 0.5 The odd number of horizontal lines is 1. The first signal charge sent in this embodiment is the content of 1 1 7 and 11 8 in the last two columns of light sensors. Then, the other two columns 11 5 and 116 light are output. The content of the sensor starts with It is Block 3. Figure 5C shows that the transmission of the even block is similar to that described in Figure 5B above. Q 1 1 τ, Q 12T, and Q1 3τ are stored in V [2 1 1] and VCCD [213, respectively. ] And VCCD [215] and then change Q12T in the following order: Q12T + Q13T are changed by VCCD [213, 214, 215] 4 VCCD [214 and 215] aVCCD [214, 215 and 216]-»VCCD [215 and 216 ] »And when the Q12T + Q13T pair is at VCCD [215 and 216], Q11T moves to VCCD [21 1 and 212]. According to this principle, the signal charge will move into the HCCD using the change in VCCD potential and also enter the HCCD with two clocks. H1 and H2 alternately advance to the output device and output 0.5 horizontal line _06: 06 PM__13 ^ The paper size applies the China National Standard (CNS) Λ4 specification (210X 297 mm) ------------ 0¾.- -(Read I, read the notes on the back 1 and fill in this page 31), ιτ.Φ. The Ministry of Economic Affairs has asked the central government of the Ministry of Economic Affairs to print 2 number blocks 2, 4, 6, ---. In this embodiment, the first output is the last row of light sensors of package 3 light sensor 1 1 8, stop 2, and then the two rows of light containing light sensor 1 1 6 and 1 1 7 Charge in the sensor, stop 4. It is important to note that in order to change the timing so that the dynamic range is increased and does not cause the electric noise overflow. There are two incidental measures that are also best-and use: (1) Add each VC CD temporarily The channel length and depth of the register 200 are used to increase the carrying capacity of the signal charge. (2) Increasing the bit energy well depth of the vcCD register, which can be obtained by increasing the voltage 驱动 for driving the VCCD. In a preferred embodiment, the voltage that can be applied is about 15-30 volts. The advantages of the present invention over the conventional technology can be more clearly understood by comparing FIGS. 6A and 6B. FIG. 6A is an exposure curve according to the conventional technology, and the dashed line 10 is the saturation of the light sensor. Line 1 2 is the exposure between the brightest part and time. The exposure Cs time is saturated, and solid line 1 3 is the exposure curve for the darker part. The solid line i 4 is an exposure curve relatively darker. It is obvious that if the exposure is stopped when the light sensor is saturated, the brightness in the darker area will be insufficient. FIG. 6B shows the exposure curves of 15 '16 and 17 sequentially in the darker areas according to the method of the present invention. It can be clearly seen that because the exposure time of Cx can be increased, there is no need to worry about the brighter signal. The problem of charge overflow, so you can easily increase the brightness of the dark places in the image. The present invention is only described in the preferred embodiments above, and is not intended to limit the application park of the present invention. Those skilled in the art will not depart from the present invention at 06:06 PM "__ ________ 14 This paper standard applies to China National Standard (CNS) A4 Specification (2 丨 〇χ297 ^ cent) ---: ----- 1MM Pack-(Please read the precautions on the back before filling this page) Order • Φ A7 B7 V. In the spirit of the sun and the moon (), when some changes or modifications can be made, their patent protection scope should be included in the scope of patent application below. For example, the present invention is based on SONY ICX0 5 8 AK, but it is not limited to this. The invention is only applicable to this chip, and although the present invention uses four phase shifts to transmit signal charges, in fact, it can also be applied to a chip with only three phase shifts, that is, it has nothing to do with the transmission method. The main spirit of the present invention The signal charge is read when BLK goes from high to low, and no charge is transferred at this time. —I I- H -I--ml = _ι ·-! SI— I ...... .-—- -I---- 1- -Hi---I ---- ejHI 1! ·-,]?---In r a i '丨'_ Please read the Notes on the back to fill out this page) Ministry of Economic Affairs Bureau of Standards employees consumer cooperatives printed 06:06 PM_15_ this paper scale applicable Chinese National Standard (CNS) A4 size (mm up 2i〇X297

Claims (1)

六、申請專利範圍 A8 B8 C8 D8Scope of patent application A8 B8 C8 D8 經濟部中央搮準局員工消費合作社印策 1. 一種驅動固態影像元件以增加動態範圍之方法,該固態 影像元件包含有複數個光感測器元件以水平和垂直方 向排列成矩陣,且複數行的垂直C C D伴隨該光感測器 陣列排列用以儲存接收來自該光感測器元件的信號電 荷,並且一列之水平CCD則接至每一行之該垂直CCD ,的一終端用以將接收自該垂直CCD的該信號電荷並傳 送至輸出裝置,該方法並至少包含: 步驟一,以該複數個光感測器元件接收來自一物件 $信號並轉換爲信號電荷: 步驟二,在BLK週期由高準位變成低準位時讀取 光感測器之信號電荷並分別存入與該光感測器元件相.、 鄰接之該垂直CCD內; 步驟三,以該複數個光感測器元件繼續接收來自該 物件之信號並轉換爲信號電荷; 步驟四,讀取光感測器之信號電荷並分別存入與該 光感測器元件相鄰接之該垂直CCD內;及 .步驟五,重覆步驟三和步驟四若千次; 步驟六,停止讀取信號電荷並由各該垂直CCD向、 r 前傳送至該水平CCD列; 多驟七由該水平CCD傳送該信號電荷至輸出設 備。 2 _如申請專利範圍1之方法,其中上述之步驟二至步驟 七係於B L K信號在低電位時完成的。 3 .妲申請專利範圍1之方法,其中上述之步驟三和步驟 ---—------餐-----丨11~----.--^ .(請先E讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國苯橾準(〇奶)戍4洗格(210父297公慶) 六、申請專利範圍 A8 B8 C8 D8Printed by the Consumers' Cooperative of the Central Economic and Technical Bureau of the Ministry of Economic Affairs 1. A method for driving a solid-state image element to increase dynamic range, the solid-state image element includes a plurality of light sensor elements arranged in a matrix in a horizontal and vertical direction, and a plurality of rows A vertical CCD is arranged along with the light sensor array to store the received signal charges from the light sensor element, and a horizontal CCD in one column is connected to the vertical CCD in each row, and a terminal is used to receive the signal from the The signal charge of the vertical CCD is transmitted to the output device, and the method includes at least: Step one: The plurality of light sensor elements receive a signal from an object $ and convert it into a signal charge: Step two, in the BLK cycle, the When the level becomes low, the signal charge of the light sensor is read and stored in the vertical CCD adjacent to the light sensor element. Step three, continue with the plurality of light sensor elements. Receiving a signal from the object and converting it into a signal charge; step four, reading the signal charge of the photo sensor and storing the signal charges adjacent to the photo sensor element Step 5: Repeat Step 3 and Step 4 for thousands of times; Step 6: Stop reading the signal charge and transfer it from the vertical CCD to the horizontal CCD column; Step 7: Step 7 The CCD transmits this signal charge to the output device. 2 _ As for the method of applying patent scope 1, wherein the above steps 2 to 7 are completed when the BLK signal is at a low potential. 3. The method of applying for patent scope 1, in which the above three steps and steps ----------- meal ----- 丨 11 ~ ----.-- ^ (please read E first Note on the back, please fill in this page again.) This paper size is applicable to China's national benzene standard (〇 奶) 戍 4 wash grid (210 fathers and 297 public holidays) 6. Scope of patent application A8 B8 C8 D8 經濟部中央搮準局員工消費合作社印策 1. 一種驅動固態影像元件以增加動態範圍之方法,該固態 影像元件包含有複數個光感測器元件以水平和垂直方 向排列成矩陣,且複數行的垂直C C D伴隨該光感測器 陣列排列用以儲存接收來自該光感測器元件的信號電 荷,並且一列之水平CCD則接至每一行之該垂直CCD ,的一終端用以將接收自該垂直CCD的該信號電荷並傳 送至輸出裝置,該方法並至少包含: 步驟一,以該複數個光感測器元件接收來自一物件 $信號並轉換爲信號電荷: 步驟二,在BLK週期由高準位變成低準位時讀取 光感測器之信號電荷並分別存入與該光感測器元件相.、 鄰接之該垂直CCD內; 步驟三,以該複數個光感測器元件繼續接收來自該 物件之信號並轉換爲信號電荷; 步驟四,讀取光感測器之信號電荷並分別存入與該 光感測器元件相鄰接之該垂直CCD內;及 .步驟五,重覆步驟三和步驟四若千次; 步驟六,停止讀取信號電荷並由各該垂直CCD向、 r 前傳送至該水平CCD列; 多驟七由該水平CCD傳送該信號電荷至輸出設 備。 2 _如申請專利範圍1之方法,其中上述之步驟二至步驟 七係於B L K信號在低電位時完成的。 3 .妲申請專利範圍1之方法,其中上述之步驟三和步驟 ---—------餐-----丨11~----.--^ .(請先E讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國苯橾準(〇奶)戍4洗格(210父297公慶) A8 B8 C8 D8 :?τ、申請專利範圍 围-的量音可I加^c d _之4言.,號_電 風|51諸_互容I與^感Jlill皇量1—値所_決_定」—嚴it値 減一並和堂^^之孩4勿件的接收信_1诗mi篆積爲 -最高最高可增加之曝光時間。 4·如申請專利範凰1之方法,其中上述之—步驟三,每次 1以該複數個龙感測器接收來自.....該物件的時間約ιοί 00 ps ° ^-如申-請-·專-利-範凰之方祛,更包含隊 寬度挤夫增-¾-承遁茗 6. 如申請專利範圍1之方法」_更.包含I垂直--CC.D之通 ... —...... w S深度加太..以以.增—加-承:接-自-光^^1器_之盖-最1熏荷 容量。 7. 如申請專利範圍1之方法,更包含濃驅動-垂畜CCD ' 之電壓_.增_加至.1 5-3 〇V _._,以增加承接自光..感.測器之該 信號電荷容量-f _'.v ^~—, 8. 如申霞_專_利_範圍4之方法,更包含二法器-甩、以計 '算霞肩~瓦潘~加之曝光時間_ .。 · -----„------裝— -(請先閎讀背面之注意事項再填寫本頁) 訂 線 經濟部中央標準局員工消費合作社印製 本紙張尺度逋用中國國家標準(CNS ) A4規格(210 X 297公釐)Printed by the Consumers' Cooperative of the Central Economic and Technical Bureau of the Ministry of Economic Affairs 1. A method for driving a solid-state image element to increase dynamic range, the solid-state image element includes a plurality of light sensor elements arranged in a matrix in a horizontal and vertical direction, and a plurality of rows A vertical CCD is arranged along with the light sensor array to store the received signal charges from the light sensor element, and a horizontal CCD in one column is connected to the vertical CCD in each row, and a terminal is used to receive the signal from the The signal charge of the vertical CCD is transmitted to the output device, and the method includes at least: Step one: The plurality of light sensor elements receive a signal from an object $ and convert it into a signal charge: Step two, in the BLK cycle, the When the level becomes low, the signal charge of the light sensor is read and stored in the vertical CCD adjacent to the light sensor element. Step three, continue with the plurality of light sensor elements. Receiving a signal from the object and converting it into a signal charge; step four, reading the signal charge of the photo sensor and storing the signal charges adjacent to the photo sensor element Step 5: Repeat Step 3 and Step 4 for thousands of times; Step 6: Stop reading the signal charge and transfer it from the vertical CCD to the horizontal CCD column; Step 7: Step 7 The CCD transmits this signal charge to the output device. 2 _ As for the method of applying patent scope 1, wherein the above steps 2 to 7 are completed when the BLK signal is at a low potential. 3. The method of applying for patent scope 1, in which the above three steps and steps ----------- meal ----- 丨 11 ~ ----.-- ^ (please read E first Note on the back, please fill out this page again) This paper size is applicable to China National Benzene Standard (〇 奶) 洗 4 wash grid (210 father 297 public holiday) A8 B8 C8 D8:? Τ, the volume of the patent application range- I plus ^ cd _ of 4 words., Number _ Dianfeng | 51 Zhu _ mutual capacity I and ^ Sense Jlill King 1-値 所 _ 定 _ 定 "-Yan it 値 minus Yihe Tong ^^ 的 童 4 Receive the letter _1 poem mi 篆 product is-the maximum can increase the exposure time. 4. The method of applying for patent Fan Huang 1, wherein the above-mentioned step three, each time 1 receives the object with the dragon sensors from ..... The time is about ιοί 00 ps ° ^-如 申- Please- · Special-Profit-Fan Huangzhi Fang Qu, including the team width squeezed out-¾-bearing 6. If the method of applying for patent scope 1 "_ more. Including I vertical-CC.D pass. .. —... w S Depth plus too .. To increase.-Plus-bearing: connect-from-light ^^ 1 device_ the cover-up to 1 smoke charge capacity. 7. If the method of applying for patent scope 1 further includes the voltage of the thick drive-vertical animal CCD '. _. Increase _. To .1 5-3 〇V _._ to increase the number of undertakings from the light .. sensor. The charge capacity of this signal is -f _ '. V ^ ~ —, 8. As in the method of Shen Xia_Special_Profit_Range 4, it also includes the second method-shake, to calculate' Xia Xia shoulder ~ Wapan ~ plus the exposure time _... · ----- „------ Packing--(Please read the precautions on the back before filling this page) Threading printed by the Central Consumers Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, using paper standards in China, using Chinese national standards (CNS) A4 size (210 X 297 mm)
TW87120234A 1998-12-03 1998-12-03 Method for increasing the dynamic detecting range for image of charged couple device TW396709B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW87120234A TW396709B (en) 1998-12-03 1998-12-03 Method for increasing the dynamic detecting range for image of charged couple device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW87120234A TW396709B (en) 1998-12-03 1998-12-03 Method for increasing the dynamic detecting range for image of charged couple device

Publications (1)

Publication Number Publication Date
TW396709B true TW396709B (en) 2000-07-01

Family

ID=21632205

Family Applications (1)

Application Number Title Priority Date Filing Date
TW87120234A TW396709B (en) 1998-12-03 1998-12-03 Method for increasing the dynamic detecting range for image of charged couple device

Country Status (1)

Country Link
TW (1) TW396709B (en)

Similar Documents

Publication Publication Date Title
EP0286123B1 (en) Solid-state imaging device having high-speed shutter function and method of realizing high-speed function in solid-state imaging device
US6198507B1 (en) Solid-state imaging device, method of driving solid-state imaging device, camera device, and camera system
US5264939A (en) Apparatus and method for generating an interlaced viewing signal from the output signal of a non-interlaced camera system
US4839734A (en) Solid-state imaging device having high-speed shutter function
GB2186151A (en) Solid state image pick-up arrangement
TW200836553A (en) Solid state photographing device including image sensors of CMOS type
JP2007295230A (en) Solid state imaging apparatus, driving method thereof, and camera
KR0143041B1 (en) Solid-state image pick-up device and method for driving the same
US7336308B2 (en) Digital camera with sensitivity compensation
TW200536390A (en) Imaging device and control device for an imaging device
TW396709B (en) Method for increasing the dynamic detecting range for image of charged couple device
TW563360B (en) A solid photo element and the driving method of the solid photo element
JPS63177664A (en) Electronic still camera
JPS63226177A (en) Csd type solid-state image pickup element
KR100195129B1 (en) Vertical line twice velocity convert method and circuit for home hdtv camera
JP2008177984A (en) Solid-state image pickup element
JPS59122085A (en) Solid-state image pickup element
JPS61172488A (en) Solid-state image pickup device
US7375747B2 (en) Method of driving solid-state image pickup device
JP5218342B2 (en) Driving method of solid-state imaging device
JP2513177B2 (en) Solid-state imaging device
JP3340482B2 (en) Method and apparatus for sweeping out unnecessary charge of image sensor
JP4055051B2 (en) Solid-state imaging device and driving method of solid-state imaging device
JP2734795B2 (en) Solid-state imaging device
JP5211072B2 (en) Driving method of solid-state imaging device

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees