TW396584B - The producing method of the electrostatic discharge protective circuit in IC - Google Patents

The producing method of the electrostatic discharge protective circuit in IC Download PDF

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Publication number
TW396584B
TW396584B TW86111713A TW86111713A TW396584B TW 396584 B TW396584 B TW 396584B TW 86111713 A TW86111713 A TW 86111713A TW 86111713 A TW86111713 A TW 86111713A TW 396584 B TW396584 B TW 396584B
Authority
TW
Taiwan
Prior art keywords
drain
electrostatic discharge
contacts
plate
substrate board
Prior art date
Application number
TW86111713A
Inventor
Ruei-Yun Shiue
Jin-Shan Hou
Yi-Shiun Wu
Lin-Jiun Wu
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to TW86111713A priority Critical patent/TW396584B/en
Application granted granted Critical
Publication of TW396584B publication Critical patent/TW396584B/en

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Abstract

This is a production method of the electrostatic discharge protective circuit in IC. The field effect transistor's gate oxide layer, gate plate, source plate, and butted drain are formed on the P semiconductor's substrate board. A layer of dielectric layer covers the whole semiconductor substrate board's surface. Than, a contact is opened on the top of N+ drain plate to implant the P+ dopant into the contacts opening drain plate of semiconductor substrate board contacts. It completes a N+/P+/N+ serious connection diode butted drain. It finally becomes a metal connecting line. This invention only implants the P+ dopant onto the smaller dimension contacts opening, mean. It not only decreases the protection circuit's collapse voltage to 2 volt, but also reduces this electrostatic discharge protection circuit's electric currency leakage while it is in static status and the capacitance contacts.
TW86111713A 1997-08-14 1997-08-14 The producing method of the electrostatic discharge protective circuit in IC TW396584B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW86111713A TW396584B (en) 1997-08-14 1997-08-14 The producing method of the electrostatic discharge protective circuit in IC

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW86111713A TW396584B (en) 1997-08-14 1997-08-14 The producing method of the electrostatic discharge protective circuit in IC

Publications (1)

Publication Number Publication Date
TW396584B true TW396584B (en) 2000-07-01

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ID=21626899

Family Applications (1)

Application Number Title Priority Date Filing Date
TW86111713A TW396584B (en) 1997-08-14 1997-08-14 The producing method of the electrostatic discharge protective circuit in IC

Country Status (1)

Country Link
TW (1) TW396584B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7892965B2 (en) 2000-10-18 2011-02-22 Megica Corporation Post passivation interconnection schemes on top of IC chip

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7892965B2 (en) 2000-10-18 2011-02-22 Megica Corporation Post passivation interconnection schemes on top of IC chip
US7915161B2 (en) 2000-10-18 2011-03-29 Megica Corporation Post passivation interconnection schemes on top of IC chip
US7919865B2 (en) 2000-10-18 2011-04-05 Megica Corporation Post passivation interconnection schemes on top of IC chip
US7923366B2 (en) 2000-10-18 2011-04-12 Megica Corporation Post passivation interconnection schemes on top of IC chip
US8004088B2 (en) 2000-10-18 2011-08-23 Megica Corporation Post passivation interconnection schemes on top of IC chip
US8188603B2 (en) 2000-10-18 2012-05-29 Megica Corporation Post passivation interconnection schemes on top of IC chip
US8435883B2 (en) 2000-10-18 2013-05-07 Megica Corporation Post passivation interconnection schemes on top of IC chips
US8461686B2 (en) 2000-10-18 2013-06-11 Megica Corporation Post passivation interconnection schemes on top of IC chip
US8482127B2 (en) 2000-10-18 2013-07-09 Megica Corporation Post passivation interconnection schemes on top of IC chip
US8492900B2 (en) 2000-10-18 2013-07-23 Megica Corporation Post passivation interconnection schemes on top of IC chip

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