經濟部中央標準局負工消費合作社印製 A7 B7 五、發明説明（1 ) 本發明係關於電漿處理裝置’例如半導體裝置或液晶 顯示裝置等之製造之電漿蝕刻’電漿CVD等使用電漿處 理基板之電漿處理裝置。 〔習知技術〕 半導體之大型積體電路（L S I )或液晶顯示裝置（ L C D )之量產工程使用之製造裝置，要求每單位時間處 理多數片基板，及均一處理大面積基板，及設置面積小等 事情。 爲滿足此要求，蝕刻或C VD等基板處理裝置使用之 電漿源，由高效率之點要求高密度電漿之生成，大面積基 板之均一處理要求大面積均一電漿之生成，小設置面積要 求小型化。此處之高密度指電子密度1 X 1 Ο11。！!！ — 3以 上。大面積基板，LS I之場合，直徑大槪爲8吋以上， L C D之場合爲6 3 〇 X 5 5 0 mm2以上之尺寸之基板。 習知電發源，例如文獻「Karl-Heinz Kretschmer, Karl Matl, Gehard Lorenz, lngo Kesler, and Bernd Dumbacher 著作 ，' An Electron Cyclotron Resonace (ECR) Plasma Source 〃 ,SOLID STATE TECHNOLOGY, February, 1990,^ 5 3 M -55頁」記載般，其示於圖17» 圖1 7之習知技術，係將來自微波發信器之微波介由 微波導入端子，角型金屬容器，石英容器，由基板之上部 垂直方向一處與基板呈對向將微波導入，且以包圍容器周 圍般配置之永久磁鐵形成電子回旋共振領域以生成高能量 本紙張尺度適用中國國家標準（CNS )八4規格（21(Τχ297,ή·ϋ"1 _4 - —ρ ^ -I- ^^ 批衣 —訂— I __ I I (讀先閱讀背面之注意事項再f寫本頁) 經濟部中央標隼局負工消费合作社印製 A7 ___B7 五、發明説明（2 ) 電子之同時，形成封閉電漿之磁場。Printed by the Central Bureau of Standards of the Ministry of Economic Affairs and Consumer Cooperatives A7 B7 V. Description of the invention (1) The present invention relates to plasma processing equipment, such as plasma etching of semiconductor devices or liquid crystal display devices, etc. Plasma processing device for plasma processing substrate. [Knowledge technology] Manufacturing equipment used in mass production of large-scale integrated circuit (LSI) or liquid crystal display (LCD) devices for semiconductors requires processing of a large number of substrates per unit time, uniform processing of large-area substrates, and small installation area And so on. To meet this requirement, the plasma source used in substrate processing equipment such as etching or CVD requires the generation of high-density plasma from the point of high efficiency, and the uniform treatment of large-area substrates requires the generation of a large-area uniform plasma with a small setting area. Requires miniaturization. The high density here refers to an electron density of 1 X 1 Ο11. !! !!!! — 3 or more. In the case of large-area substrates, the diameter is larger than 8 inches in the case of LS I, and in the case of L C D is a substrate with a size of 6 300 × 550 mm2 or more. Know the source of electricity, for example, the literature "Karl-Heinz Kretschmer, Karl Matl, Gehard Lorenz, lngo Kesler, and Bernd Dumbacher," An Electron Cyclotron Resonace (ECR) Plasma Source SOL, SOLID STATE TECHNOLOGY, February, 1990, ^ 5 3 Page M-55 ", as shown in Figure 17». The conventional technique shown in Figure 17 is the introduction of the microwave from the microwave transmitter through the microwave introduction terminal, angle metal container, quartz container, vertical from the upper part of the substrate One direction is opposite to the substrate to introduce the microwave, and the permanent magnets arranged around the container form an electron cyclotron resonance field to generate high energy. This paper is applicable to China National Standard (CNS) 8-4 (21 (Τχ297, Price) · Ϋ " 1 _4-—ρ ^ -I- ^^ Approval—Order — I __ II (Read the precautions on the back before writing this page) Printed by A7 ___B7 5. Description of the invention (2) At the same time as the electrons, a magnetic field of a closed plasma is formed.
又，另一習知技術，例如「Hiroshi Nishizato，其他3 名作者，"DEPOSITION OF SiOF FILE IN A HIGH DENSITY PLASMA REACTOR ” ，PROCEEDINGS: THE FOURTH INTERNATIONAL SYMPOSIUM ON SPUTTERING & PLASMA PROCESSES, -ISSPf97~, Kanazawa, Japan, 1995,第 6 1 頁― 第66頁」記載般，其示於圖18。 本習知例，除基板處理用之處理室外另設電漿生成室 ，使用主線圈俾於上述電漿生成室中生成電子回旋共振磁 場，相對於基板從上部垂直方向1處與基板呈對向地將微 波導入，於基板下側設補助線圈俾將上述主線圈生成之磁 場強度於上述基板上設定爲特定値以下。 〔發明所欲解決之課題〕 圖17所示習知技術中，特別是處理大面積基板時， 射入之微波之大部分，首先射入基板。微波由基板反射後 ，射入永久磁鐵所作成之電子回旋共振磁場，因此基板之 加熱顯著。又，主要以散亂於腔室內之微波生成電漿，因 而電漿之生成效率不佳，即高密度電漿之生成困難。亦即 ，無法生成臨界點以上密度之電漿，於真空容器內產生微 波之駐波分布，微波受上述駐波分布之影響，同樣地大面 積高密度微波之生成困難，此爲問題。 圖1 8之習知技術中，微波直接射入主要以線圈生成 之微波磁場，微波之生成效率高，此爲優點。但是，因大 本纸張尺度適用中國國家標準（CNS ) 格（210X 297公餘)7ξΖ ~ ^---Γ------^------ΐτ------.^ ' - - / (請先閱讀背面之注意事項再rtT本頁) : 經濟部中央標準局貝工消费合作社印製 A7 ___ B7 五、發明説明（3 ) 面積之電子回旋共振磁場領域之生成係使用線圏，處理大 面積基板時，線圈成爲大型化，以爲問題。而且，即使使 用補助線圈，基板上之磁場強度分布難以達到一樣。電漿 之密度分布依存於磁場強度分布，因而大面積電漿之生成 困難，即大面積基板之均一處理困難，此爲問題點。又， 因基板上不均一磁場之存在，會產生元件損害之問題。 本發明係有鑑於上述問題點，目的在於提供容易生成 大面積，且均一之高密度電漿，且可實現裝置小型化之電 漿處理裝置。 〔解決問題之方法〕 爲達成上述目的，本發明之電漿處理裝置，係具備： 被處理物保持於內部的處理室；於該處理室內形成磁場的 磁場形成裝置；及將微波導入上述處理室內的波導管；藉 由來自上述波導管之微波及磁場形成裝置之磁場於上述處 理室內產生電漿以處理上述被處理物；其特徵爲： 用以產生上述微波之產生器爲1個，用於將來自該產 生器之微波導入之上述波導管有多數條連接於處理室內。 又，本發明之電漿處理裝置，係具備：被處理物保持 於內部之同時，產生電漿的處理室；連接於該處理室內， 導入微波以產生電漿的波導管；設於該波導管外周，且於 該波導管及上述處理室內之至少一部分具有電子回旋共振 磁場強度之同時，形成沿波導管內之微波之傳送方向，磁 場之方向反轉之橫切磁場的第1永久磁鐵；及在上述處理 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公漦) 7〇Ζ ' (請先閱讀背而之注意事項再欢寫本頁) .裝. 訂 據 A7 ________Β7 五、發明説明（4 ) 室之周圍交互變換極性，配置有多數個的第2永久磁鐵； 其特徵爲： 用以產生上述微波之產生器爲1個，用於將來自該產 生器之微波導入之上述波導管於處理室內連接有多數條， 例如4條。 又，4條波導管連接於處理室內時，具有：將來自1 個產生器之微波分歧爲2之第1T分岐波導管；及將在該 第1 τ分歧波導管分歧爲2之各微波再分歧爲2總計爲4 分歧的第2 T分歧波導管；用於將該4分歧之微波分別導 入之4條波導管連接於上述處理室內。 又，將用於導入來自1個產生器之微波的上述波導管 N條連接於處理室內之同時，於N — 1條波導管設匹配元 件用以控制該波導管內部之微波駐波之分布。 經濟部中央標準局負工消f合作社印繁 例如，處理室內連接4條波導管時，當由1個振盪器 射出之微波，2次經由T分歧波導管，再藉由相對基板搬 送方向配置成略對稱狀之波導管射射入上述處理室時’在 上述處理室內部之微波射入部附近所設置之電子回旋共振 磁場領域，藉由該微波產生高能量電子。在橫切磁場中’ 由上述處理室內之壁附近起向處理室中心部，磁場強度急 速減少。因此，壁附近局部產生之高能量電子容易向上述 處理室中心部擴散，同時於處理室全體產生電漿。因採用 永久磁鐵形成之橫切磁場，在電黎封閉領域中之磁場強度 極小。因此，均一之電漿形成爲可能。特別是4條以上波 導管連接於上述處理室時’大面積基板之均一處理必要之 本紙張尺度適用中國國家標準（CNS ) Λ4規格（2丨Ο X 29?公釐）-7- 經濟部中央標準局負工消费合作社印^ A7 _B7 五、發明説明（5 ) 同樣之電漿之產生爲可能。又，基板上之磁場強度可以小 至1 0 G a u s s以下，不會產生元件損害。 〔發明之實施形態〕 以下，以圖1，圖2，圖3說明本發明之電漿處理裝 置之一實施例。 如谓示，構成處理室1 0 0之天板1及側壁2介由絕 緣物3連接，側壁2介由絕緣物4接於底板5 (底板5電 接於基準電位）。於底板5介由閘閥6連接搬送室7可搬 送基板1 4，同時，介由另一閘代8連接將處理室1 0 0 真空排氣之真空排氣裝置9。於底板5介由絕緣物1 0連 接保持基板14之基板保持器11。藉搬送室7內所設搬 送機器人將基板14搬送基板保持器11。於側壁2設氣 體導入用噴喔12a，12b (氣體導入用噴嘴12a ’ 1 2 b設於天板1亦可，氣體導入用噴嘴1 2 a，1 2 b 中之一方省略亦可）。 又，圖3中雖未示出，於側壁2設有微波導入部 15a，15b，15c，15d，分別連接波導管 21a ，21b，21c，21d。圖1方包含微波導入 部15a ， 15c之處理室1〇〇之斷面。如圖示，於波 導管21a，21b，21c，21d分別接截線調諧器 301a，301b，301c，301d 及檢波器 302a，302b，302c，302d。於微波導入 部15a ， 15c內部設介電體16a ， 16c ，雖未圖 表紙張尺度適用中國國家標準（CNS ) A4^格（210X297公狯)~~7〇1 ~' (諳先閱讀背面之注意事項再价薄本頁) .裝.Also, another well-known technology, such as "Hiroshi Nishizato, 3 other authors, " DEPOSITION OF SiOF FILE IN A HIGH DENSITY PLASMA REACTOR", PROCEEDINGS: THE FOURTH INTERNATIONAL SYMPOSIUM ON SPUTTERING & PLASMA PROCESSES, -ISSPf97 ~, Kanazawa , Japan, 1995, page 61 "page 66", as shown in Fig. 18. In this example, a plasma generating chamber is set up in addition to the processing room for substrate processing. The main coil is used to generate an electron cyclotron resonance magnetic field in the above plasma generating chamber, and it is opposed to the substrate at a vertical direction from the upper part with respect to the substrate The microwave is introduced, and an auxiliary coil is provided on the lower side of the substrate, and the magnetic field intensity generated by the main coil is set to a specific value or less on the substrate. [Problems to be Solved by the Invention] In the conventional technology shown in FIG. 17, particularly when a large-area substrate is processed, most of the microwaves that are incident are first incident on the substrate. After the microwave is reflected by the substrate, it enters the electron cyclotron resonance magnetic field created by the permanent magnet, so the substrate is significantly heated. In addition, the plasma is mainly generated by the microwave scattered in the chamber, so the plasma generation efficiency is not good, that is, the generation of high-density plasma is difficult. That is, it is impossible to generate a plasma with a density above the critical point, and a standing wave distribution of microwaves is generated in the vacuum container. The microwave is affected by the above standing wave distribution. Similarly, it is difficult to generate high-density microwaves with large areas. This is a problem. In the conventional technique shown in FIG. 18, microwaves are directly radiated into a microwave magnetic field mainly generated by a coil, and the microwave generation efficiency is high, which is an advantage. However, due to the large paper size, the Chinese National Standard (CNS) grid (210X 297 public) 7ξZ ~ ^ --- Γ ------ ^ ------ ΐτ ------. ^ '--/ (Please read the precautions on the back before rtT this page): Printed by the Central Standards Bureau of the Ministry of Economic Affairs and printed by the Shellfish Consumer Cooperative A7 ___ B7 V. Description of the invention (3) The generation system of the area of the electron cyclotron resonance magnetic field When using a wire coil, when processing a large-area substrate, the size of the coil becomes a problem. Moreover, even when the auxiliary coil is used, the magnetic field intensity distribution on the substrate is difficult to achieve the same. The density distribution of the plasma depends on the magnetic field intensity distribution, so it is difficult to generate a large-area plasma, that is, it is difficult to uniformly handle a large-area substrate, which is a problem. In addition, the existence of a non-uniform magnetic field on the substrate causes a problem of damage to the device. The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a plasma processing apparatus that can easily generate a large-area, uniform high-density plasma, and can realize miniaturization of the apparatus. [Method for solving the problem] In order to achieve the above-mentioned object, the plasma processing apparatus of the present invention includes: a processing chamber in which the object to be processed is held; a magnetic field forming apparatus for forming a magnetic field in the processing chamber; and introducing microwaves into the processing chamber. A microwave tube from the above-mentioned waveguide and the magnetic field of the magnetic field forming device to generate a plasma in the processing chamber to process the object to be processed; characterized in that: one generator for generating the microwave is used for Many of the above-mentioned waveguides that introduce microwaves from the generator are connected to the processing chamber. In addition, the plasma processing apparatus of the present invention includes a processing chamber that generates a plasma while the object to be processed is held inside; a waveguide connected to the processing chamber and introducing microwaves to generate a plasma; and a waveguide provided in the waveguide. The first permanent magnet that crosses the magnetic field along the transmission direction of the microwave in the waveguide and the direction of the magnetic field is reversed while at least a portion of the waveguide and the processing chamber has an electron cyclotron resonance magnetic field strength; and In the above process, the paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 cm) 7〇Z '(Please read the precautions on the back before writing this page). Installation. Order A7 ________ Β7 V. Invention Explanation (4) The polarity of the surroundings of the chamber is alternately changed, and a plurality of second permanent magnets are arranged; it is characterized in that: one generator for generating the microwave is used for introducing the microwave from the generator into the above-mentioned wave There are a plurality of conduits connected in the processing chamber, such as four. In addition, when four waveguides are connected in the processing chamber, the first T-divided waveguide that divides microwaves from one generator into two and the two microwaves that branch from the first τ branched waveguide to two are branched. The 2 T branched waveguides with a total of 2 branches and 4 branches; the 4 waveguides for introducing the 4 branched microwaves are respectively connected to the processing chamber. In addition, while the N waveguides used for introducing microwaves from one generator are connected to the processing chamber, matching elements are provided in the N-1 waveguides to control the distribution of the microwave standing waves inside the waveguide. For example, when 4 waveguides are connected in the processing room, microwaves emitted by one oscillator pass through the T branch waveguide twice, and then are arranged in the opposite substrate transfer direction. When a slightly symmetrical waveguide is radiated into the processing chamber, the high-energy electrons are generated in the electron cyclotron resonance magnetic field set near the microwave injection portion inside the processing chamber. In the transverse magnetic field ', the magnetic field intensity decreases rapidly from the vicinity of the wall in the processing chamber to the center of the processing chamber. Therefore, high-energy electrons locally generated near the wall are likely to diffuse to the center of the processing chamber, and at the same time, plasma is generated in the entire processing chamber. Due to the transverse magnetic field formed by the permanent magnets, the magnetic field intensity in the electric closed area is extremely small. Therefore, uniform plasma formation is possible. In particular, when more than 4 waveguides are connected to the above processing chamber, the paper size necessary for uniform processing of large-area substrates is subject to the Chinese National Standard (CNS) Λ4 specification (2 丨 〇 X 29? Mm) -7- Central Ministry of Economic Affairs Printed by the Bureau of Standards, Consumer Cooperatives ^ A7 _B7 V. Description of Invention (5) The same plasma is possible. In addition, the magnetic field strength on the substrate can be as small as 10 G a u s s or less, and no element damage is caused. [Embodiment of the Invention] An embodiment of the plasma processing apparatus of the present invention will be described below with reference to Figs. 1, 2, and 3. As shown, the top plate 1 and the side wall 2 constituting the processing chamber 100 are connected via an insulator 3, and the side wall 2 is connected to the bottom plate 5 through an insulator 4 (the bottom plate 5 is electrically connected to the reference potential). The base plate 5 is connected to the transfer chamber 7 through the gate valve 6 to transfer the substrate 14 and at the same time, the vacuum exhaust device 9 for evacuating the processing chamber 100 is evacuated through another gate 8. A substrate holder 11 holding a substrate 14 is connected to the bottom plate 5 via an insulator 10. The substrate 14 is transferred to the substrate holder 11 by a transfer robot provided in the transfer chamber 7. Gas injection nozzles 12a, 12b are provided on the side wall 2 (the gas introduction nozzles 12a '1 2b may be provided on the top plate 1, and either of the gas introduction nozzles 12a, 1 2b may be omitted). Although not shown in Fig. 3, microwave introduction portions 15a, 15b, 15c, and 15d are provided on the side wall 2 and are connected to the waveguides 21a, 21b, 21c, and 21d, respectively. Fig. 1 is a cross section of a processing chamber 100 including microwave introduction sections 15a and 15c. As shown in the figure, the waveguides 21a, 21b, 21c, and 21d are connected to the stub tuners 301a, 301b, 301c, 301d, and the detectors 302a, 302b, 302c, and 302d, respectively. Dielectrics 16a and 16c are installed inside the microwave introduction sections 15a and 15c. Although the chart paper size is not applicable to the Chinese National Standard (CNS) A4 ^ (210X297 cm) ~~ 7〇1 ~ '(谙 Please read the note on the back first) (Notes on this page).
、1T A7 β7 五、發明説明（6 ) 讀 先 閲 ifi 背 面 之 注 意 事 項 再 !。裝 頁 示，於微波導入部15b，15d內部亦設有介電體。於 微波導入部15a，15b，15c，15d與波導管 21a ，21b，21c，21d之連接部。設有真空封 裝用介電體 201a，201b，201c，201d。 當然，介電體16a，16b，16c，16d與 201a，201b，201c，201d —體亦可。· 另一方面，在側壁2及天板1之周圍分別設永久磁鐵 1 7 a，1 7 b以形電漿密閉用橫切磁場。於永久磁鐵 1 7 a外周設強磁性體（軛）1 8 a。特別是，設於微波 導入部15a，15c上下之永久磁鐵17a’ ，17a 訂 ”具同一極性，俾於介電體16a ， 16c之真空側形成 電子回旋共振磁場強度以上之磁場領域。介電體16a ， 1 6 c係重疊配置於伴隨產生之上述波導管2 1 a， 蔴 經濟部中央標準局負工消費合作社印裝 2 1 c內之電子回旋共振磁場強度領域。電子回旋共振磁 場強度依射入微波頻率而定，2 . 45GHz時爲875 Ga u s s。又，天板1，側壁2，基板保持器1 1分別 連接高頻電源19a，19b，19c之同時，設監視、 控制各個相位之相位調整器2 0。 圖4爲從微波波導管2 1 d斷面看之處理室1 0 〇， 於圖4省略搬送室7，閘閥6之記載。 圖5爲微波電路之構成。圖中，微波振盪器2 4連接 微波電源4 0 0，微波振盪器2 4射出之微波經由絕緣體 25，檢波器26，再由T分歧波導管27a分歧爲2。 分歧出之各微波再經由T分歧波導管27b，27c分歧 本紙張尺度適用中國國家標準（CNS ) A4規格（2i〇X297公i ) -9-、 1T A7 β7 V. Description of the invention (6) Read the notes on the back of ifi first! The installation page shows that a dielectric body is also provided inside the microwave introduction portions 15b and 15d. The connection portions of the microwave introduction portions 15a, 15b, 15c, and 15d and the waveguides 21a, 21b, 21c, and 21d. Dielectrics 201a, 201b, 201c, and 201d for vacuum encapsulation are provided. Of course, the dielectric bodies 16a, 16b, 16c, 16d and 201a, 201b, 201c, 201d may be used as one body. · On the other hand, permanent magnets 1 7 a and 1 7 b are arranged around the side wall 2 and the top plate 1 to form a plasma-tight cross-cut magnetic field. A ferromagnetic body (yoke) 1 8 a is provided on the outer periphery of the permanent magnet 17 a. In particular, the permanent magnets 17a 'and 17a provided above and below the microwave introduction portions 15a and 15c have the same polarity and are formed on the vacuum side of the dielectrics 16a and 16c to form a magnetic field region having an electron cyclotron resonance magnetic field strength or higher. Dielectrics 16a, 16c are superimposed on the accompanying waveguide 2 1a, and printed in the field of electron cyclotron resonance magnetic field within 2 1 c by the Central Bureau of Standardization of the Ministry of Economic Affairs and Consumer Cooperatives. The electron cyclotron resonance magnetic field intensity depends on the radiation Depending on the microwave frequency, it is 875 Ga uss at 2.45GHz. In addition, the top plate 1, side wall 2, and substrate holder 11 are connected to high-frequency power sources 19a, 19b, and 19c, respectively, and the phases of each phase are monitored and controlled. Adjuster 20. Fig. 4 shows the processing chamber 100 viewed from the cross section of the microwave waveguide 21d, and the description of the transfer chamber 7 and the gate valve 6 is omitted in Fig. 4. Fig. 5 shows the structure of the microwave circuit. In the figure, the microwave The oscillator 24 is connected to the microwave power source 400, and the microwave emitted by the microwave oscillator 24 is passed through the insulator 25 and the detector 26, and then divided by the T branch waveguide 27a to 2. The branched microwaves are then transmitted through the T branch waveguide 27b. 27c divergent paper Scale applicable Chinese National Standard (CNS) A4 size (2i〇X297 male i) -9-
I A 7 ____._B7 五、發明説明（7 ) 爲2，分歧出之4條波導管21a，21b，21c， 21d，分別接處理室100之微波導入部15a， 15b，15c，15d〇 圖6爲處理室1 0 0之斜視圖。圖6中，爲求簡單而 省略搬送室7及閘閥6之記載。又，截線調諧器3 0 1 a ，301b ’ 301c，301d係使用手動3截線調諧 器。於該圖中，連接微波導入部15a，15b，15c ，15d 之波導管 21a，21b，21c，21d，係 在處理室1 0 0起算管內波長之4倍以內之距離折曲成垂 直方向之同時，在由處理室1 0 0起算管內波長之1 0倍 以內之距離分別連接有例如電動控制可能之截線調諧器 301a，301b，301c，301d 及檢波器 30 2 a，302b，302c，302d 作爲匹配元件 。又，另設有截線調諧器控制器4 2 6俾檢測由檢波器 23a，23b，23c，23d輸出之進行波源、反射 波源、反射係數、相位、並控制上述截線調諧器3 0 1 a ，301b，301c，301d° 經濟部中央標_局負工消费合作社印製 振盪器射出之微波經絕緣體後，經由T分歧波導管二 次，再導入4分歧波導管。於4分歧波導管各具有截線調 諧器及檢波器，可檢測。控制波導管中之駐波狀態。4分 歧之波導管接於各處理室，微波於處理室內從圓周方向4 處被導入。當微波射入處理室時，在微波導入部附近之電 子回旋共振領域產生高能量電子之同時，藉由所產生高能 量電子與分子、原子間之衝突而產生電漿。 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐）-1〇 · A7 ____B7 五、發明説明（β ) 藉由在處理室外周依序變化極性而配置之永久磁鐵， 於處理室內部形成橫切磁場。永久磁鐵係由殘留磁通密度 大（約11000G)之釤、鈷等形成如此形成之橫切磁 場，於處理室內壁附近具數伯高斯（G a u s s )之強度 ，隨著遠離內壁而急速減少，在處理室中心部成爲零。即 ，在數拾高斯以下之極弱之磁場領域可密閉電漿，故可產 生均一分布之電漿。又，在電子回旋共振領域，微波之吸 收爲極高效率（8 0%以上），而且，在側壁附近之電子 回旋共振領域產生之高能量電子，及電漿容易朝容器中心 方向擴散，故高密度、均一、大面積之電漿產生爲可能。 以下，以實驗數據具體說明之。首先，於本電漿處理 裝置中導入壓力0.2Pa之氬氣體，從4分歧波導管導 入微波，產生電漿。所產生電漿之電子密度之測定結果示 於圖7。由圖7可知，在微波導入部之高度位置，可產生 電子密度1 X 1 0 11個以上高密度之微波。另外，’在基板 上2 2mm之高度，從處理室中心起算± 1 0 0mm之範 圍可產生且± 5%以下之均一電漿。 經濟部中央標準局員工消费合作社印製 以下，爲證明本發明之有效性，將本發明電漿處理裝 置適用於二氧化矽之成膜。將直徑8吋之矽基板從搬送室 搬至基板保持器11上。其次，從噴嘴2a ，12b將氬 氣體、氧氣體、甲矽烷氣體等導入處理室中，將微波從4 分歧波導管導入。在電子回旋共振領域產生之高能量電子 ，與氣體分子衝突將其電離而形成高密度均一之電漿之同 時，一部分之氣體分子因電漿中之衝突現象而成爲自由基 本紙張尺度適用中國國家標隼（CNS ) Λ4規格（210X297公f ) -11 - 經濟部中央標準局Μ工消费合作社印製 A7 ______ B7 五、發明説明（9 ) 。甲矽烷之自由基與氧結合，於基板上形成二氧化矽膜。 形成之二氧化矽膜之分布示於圖8。 圖8中之Ml ，M2，M3，M4爲微波之射入方向 。又，3 1 0W，3 0 0W等分別表示從波導管吸入電漿 中之微波功率。由圖8可知，適用於4分歧波導管系，在 直徑8吋之矽基板上，以成膜速率5 0 0 nm/分之高成 膜速度，可形成±1.6%(1σ)之均一性極佳之二氧 化矽膜。本實施例中，基板之直徑爲8吋，但隨處理室之 更大型化，更大型基板之處理亦可對應。 參考起見，將2分歧波導管系適用上述二氧化矽膜之 形成製程之場合示於圖9 (a)，圖10(a)，適用無 分歧波導管系之場合示於圖9(b)，圖10(b)。圖 9 (a)爲適用之2分歧波導管之構成，圖10 (a)爲 膜厚分布。波導管爲對向配置。由圖10 (a)可知，連 接對向配置之波導管之直線上之成膜速度快，與其垂直之 方向之成膜速度慢。因此，膜厚均一性降低1σ(±6% )。又，圖9 (b)之無分歧之1處射入系之膜厚分布’ 如圖1 0 ( b )所示，係對應微波之射入位置’僅基板上 1處變厚。因此，均一性降低±2 0%。 圖8〜圖1 0中，天板及基板保持器未施加高頻電壓 ，但基板蝕刻必要時，可於基板保持器施加高頻電壓。此 場合下同樣地，四分歧波導管較之無分歧波導管’二分歧 波導管更能獲得均一性佳之膜厚分布。 如以上所述，適用4分歧波導管系’可得均一性極佳 ----------J裝------訂------腺 (讀先閲讀背面之注意Ϋ項再填?r··本頁) ，ί, 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210Χ297公t ) - 12- 經濟部中央標準局員工消费合作社印裝 A7 B7五、發明説明（1〇 ) 之良好膜厚分布。 以下，說明4分歧波導管之控制性。於圖1 1 ，各波 導管內之進行波以5 1 1 ί〜5 1 7 f，反射波以 51 1 r〜5 17 r表示。由圖1 1可知，在4分歧波導 管系，當由任一波導管射入處理室之微波之一部分反射時 ，該反射波即經由T分歧波導管而以來自另一波導管之進 行波射入電漿。因此，僅將分歧波導管連接於處理室，係 難以控制由各波導管吸入電漿之微波功率。 解決此問題之方法，本實施例中，係在4分歧波導管 分別設置檢波器302a，302b，302c， 3 0 2 d以檢測波導管內之微波進行波功率，反射波功率 ，反射係數及其相位，乃至波導管內之駐波分布，同時， 於4分歧波導管之至少之條設匹配元件。匹配元件可使用 例如截線調諧器。此種構成，依據來自檢波器之信號，藉 由改變截線調諧器之短線之插入波導管中之距離，即可調 整由各波導管吸收入電漿之微波能量。例如，振盪器之射 出功率爲1·5kW時，可將由各波導管吸入電漿之微波 功率設定爲300W〜3 1 0W»即，可設定在效率8 0 %以上，且由各波導管吸入電漿之功率可保持略均等。來 自振盪器之射出功率之8 0%以上可吸入電漿時，在實用 上即足夠。又，依本構成，當振盪器之射出功率爲1 . 5 kW時，可將某一波導管之進行波功率與反射波功率之差 設爲4 5 0W，而另一波導管爲2 5 0W〜2 6 0W，即 由各波導管吸入電漿之微波功率可控制》 請 閱 讀 背 .面 之 注 意 Ϊ 頁 訂 線 本紙張尺度適用中國國家標準（CNS > Λ4規格（210Χ297公釐）.|3 經濟部中央標隼局員工消t合作社印裝 A7 ___B7 五、發明説明（11 ) 因此，本4分歧波導管之控制性充分具實用，適用於 半導體等之量產裝置。又，上述檢波器未必爲分歧波導管 之最後分歧部分（4分歧波導管時爲連接處理室之4條波 導管部分）亦可。例如，如圖12所示，於4分歧波導管 中之3處設檢波器，而且，在未設檢波器之波導管之上流 側之分歧前之波導管部設波導管3 0 2 e亦可。又，圖1 中，由處理室起至角形波導管之間設截線調諧器及檢波器 亦可。又，此處，波導管相對於基板呈略平行，但不一定 要平行。應保持良好之均一性，需將連接處理室之4分歧 波導管之各個之間之角度設定爲9 0度± 3 0度以內。波 導管相對基板搬送方向爲略對稱系，而且，從振盪器射出 之微波到達處理室止之距離。於各分歧波導管爲略一致， 但不如此亦可。但是，將由振盪器經分歧波導管，到達上 述處理室止之距離之於各分歧波導管間之差設定爲微波之 管內波長以下時，可得微波之良好控制性。 又，本成膜結果，不使用4分歧波導管系，而使用在 4個所之波導管之各個連接有匹配元件、檢波器、絕緣體 、及振盪器之無分歧波導管系亦可。特別是，使用無分歧 之4條波導管系時，伴隨分歧產生於波導管間之相互作用 不存在，可使來自振盪器之微波功率更容易爲電漿吸收， 可構成更高效率之處理裝置》 以上，係以4條波導管爲例作說明，當然，波導管之 數目爲4條以上亦可得均一之成膜。此情況下，連接於處 理室之波導管之數目設爲N時，爲確保微波之控制性，至 本紙張尺度適用中國國家標準（CNS〉Λ4規格（210>< 297公餘1 - 14 - —Γ - I訂 鍊 (讀先閱讀背面之注意事項再^寫本頁) ί A7 五、發明説明（12 ) 少在N-1條波導管設匹配元件較好。 基板處理後，於處理室內壁面上附著膜或異物，故需 潔淨工程將其除去。上述習知例中，係將NF3、C 2 F 6 、C C 1 4等氣體導入處理室，於基板保持器施加高頻電壓 。相對於此，本發明，除基板保持器之外，天板及側壁亦 施加高頻電壓，而且可變化其相位，因此，於處理室內壁 全面範圍之有效蝕刻爲可能，因此，更高速之潔淨爲可能 〇 圖1 3爲適用本發明之第2實施例。本實施例係和第 1實施例例大略相同。不同處爲將永久磁鐵4 1 0設於波 導管21a，21b，21c，21d之外周。此種磁鐵 之構成亦可得同樣性能。 經濟部中央標準局員工消費合作社印製 —Γ---------裝-- . - > / (請先閱讀背面之注意事項再填k本頁) 線 圖1 4爲本發明適用之第3實施例。本實施例大略和 第1實施例相同。不同之處爲，在微波導入部1 5 a， 15c之周圍設捲線210a ，210c ，藉捲線用電源 2 2 0 a，2 2 0 c使其流通電流以形成電子回旋共振磁 場領域，且於捲線2 1 0 a，2 1 0 c之外周配置強磁性 體 2 1 1 a，2 1 1 c。 藉此種構成亦可實現同樣性能之電漿處理裝置。特別 是，微波導入部形成爲矩形，矩邊長設爲5mm〜2 0 m m，則不必擔心微波電場引起之絕緣破壞，可縮小形成 電子回旋共振磁場之必要線圏電流値，構成小型線圈。又 ，微波導入部1 5 a，1 5 c內設鐵磁性等具微波透過性 之磁性體亦可。又，藉線圈用電源220a ，220c控 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X 297公t ) . <|5- 1 經濟部中央標準局貝工消費合作社印裝 A7 B7 五、發明説明（13 ) 制線圈電流値，即可控制由各波導管吸入電榮之微波功率 。設置線圈電流控制器2 3 0俾連動控制該線圈電流値及 上述匹配元件，則可構成控制性更佳之電黎處理裝置。又 ，圖1 4未示出，另外接有2條微波導入部1 5 c， 1 5 d »圖1 5爲從微波導入部1 5 d看之處理室側面圖 〇 圖1 6爲本發明適用之第4實施例。此實施例，係在 金屬製容器6 0 1內設置由調溫之介電體形成’可保持真 空之處理室6 0 4之同時，於處理室6 0 4之外周配置依 序變化極性之永久磁鐵6 0 2，於處理室6 0 4內部形成 橫切磁場之同時，藉波導管603a ，603c將微波導 入上述處理室6 0 4內。圖1 6未示出，其他另接有2條 波導管603b，603d。又，省略調溫相關裝置之記 載。與波導管鄰接之永久磁鐵之極性爲同一，於處理室內 形成電子回旋共振領域。 蝕刻裝置或CVD裝置中，爲減式附著於壁p之異物 ’有時將壁溫上昇至攝氏數百度。即使此場合大，藉上述 構成’亦可得和第1實施例同樣性能之電漿處理裝置。 於第4實施例，和圖1 3同樣地在波導管6 0 3 a ， 6〇3b，603c ’ 603d周圍配置同一極性之永久 磁鐵亦可’和第3實施例同樣地，在處理室6 0 4與波導管 603a ，603b，603c，6 0 3d 之周圍捲繞 線圈使流經電流之同時，在上述線圏周圍配置強磁性體亦 可〇 本紙張尺度適用中關家縣（CNS > M規格（210X297公缝)_ 16 _ ' _” I ^ ^裝 — I n 線 (請先閲讀背面之注意事項再费涔本頁) 經濟部中央標準局員工消费合作社印製 ΑΊ B1 五、發明説明（14 ) 以上，係以全圓形之基板處理爲例作說明。但使用正 方體狀處理室，完全同樣地配置波導管，如此即可進行液 晶顯示裝置製造使用之矩形狀之大型基板之均一處理。特 別是，由4個角隅導入微波，則均一處理之效果更顯著。 〔發明之效果〕 依上述本發明之電漿處理裝置，係具備：被處理物保 持於內部的處理室；於該處理室內形成磁場的磁場形成裝 置；及將微波導入上述處理室內的波導管；藉由來自上述 波導管之微波反磁場形成裝置之磁場於上述處理室內產生 電漿以處理上述被處理物的電漿處理裝置；其特徵爲： 用以產生上述微波之產生器爲1個，用於將來自該產 生器之微波導入之上述波導管有多數條連接於處理室內。 又，依本發明之電漿處理裝置，係具備：被處理物保 持於內部之同時，產生電漿的處理室：連接於該慮理室內 ，導入微波以產生電漿的波導管；設於該波導管外周，且 於該波導管及上述處理室內之至少一部分具有電子回旋共 振磁場強度之同時，形成沿波導管內之微波之傳璋方向， 磁場之方向反轉之切磁場的第1永久磁鐵；及在上述處理 室之周圍交互變換極性，配置有多數個的第2永久磁鐵； 其特徵爲： 用以產生上述微波之產生器爲1個，用於將來自該產 生器之微波導入之上述波導管於處理室內連接有多數條， 例如4條，因此，壁附近局部產生之高能量電子容易向處 J--,----丄--,1^-----11T------^ .. " N) (請先閱讀背面之注意事項再埤ftT本頁) _ \ 本紙張尺度適用中國國家標準（CNS ) A4規格（2IOX 297公t ) - 17- A7 B7 經濟部中央標率局負工消費合作社印聚 五 、發明説明（15 ) 1 | 理 室中 心 部 擴散，同時於處理室全體 可 產 生 電 u^e ，又 採 I 用 永久 磁 鐵 形成之橫切磁場，故電漿 密 閉 領 域 中 之磁 場 強 I 度 極小 > 均 一之電漿之形成爲可能。 1 特 別 是 ，4條以上之波導管連接 於 處 理 室 時 ，大 面 積 先 閱 1 基 板之 均 —— 處理時必要之同樣之電漿 之 產 生 爲 可 能， 容 易 Vi 背 δ ―丨 I 之 產 生大 面 積 ，均一，高密度之電漿， 而 且 可 實 現 裝置 之 小 注 意 I 型 化。 應 用 於電漿CVD或蝕刻時， 可 提 供 小 型 ，具 高 處 事 項 矣一· 1 1 理 能力 之 電 漿處理裝置。 % I 裝 个 頁 ____· 1 I C 圖面 之 簡 單說明〕 1 | 圖 1 ; 本發明之電漿處理裝置-之 第 1 實 施 例 之斷 面 圖 1 I 0 1 訂 I 圖 2 • 圖1之電漿處理裝置之平面圖。 1 圖 3 ： 本發明之電漿處理裝置之、 第 '1 實 施 例 ，變 化 圖 1 1 .1 之角 度而成之斷面圖。 | 獨 4 : 圖1之電漿處理裝置之正面圖。 /’線 I 圖 5 * 本發明之電漿處理裝置之 第 1 實 施 例 中之 微 波 1 1 電 路之 構 成 圖。 1 1 圖 6 ： 圖1之電敗處理裝置之第] L實施例之斜視匱 ° 1 ISI _ 7 本發明之一實施例之氣氣 電 漿 中 之 電 子密 度 分 I 布特性 回 圖 0 1 .圖 8 利用本發明之一實施例形 成 二 氧 化 矽 膜時 之 膜 厚 分布 0 1 1 圖 9 ( a ):二氧化矽膜形成製 程 使 用 2 分 歧波 導 管 [ 1 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公费）-18- A7 A7 經濟部中央標準局負工消费合作社印製 五、發明説明（16 ) 系之場合。 圖9 ( b ):使用無分歧波導管系、之_場_合之構成圖。 * · ........—............, 圖1 0 ( a ):二氧化矽膜形成製程使用2分歧波導 管系時之膜厚分布。 圖10 (b):使用無分歧波導管系時之膜厚分布圖 〇 圖1 1 :本發明中之分歧波導管內之微波之進行波與 反射波之模式圖。 圖1 2 :本發明之一實施例中之、檢波器之設置位置之 圖。 圖1 3 :本發明之電漿處理裝置之第2實施例之正面 圖。 圖14:本發明之電漿處理裝置之第3實施例之正面 圖。 圖1 5 :圖1 4之側面圖。 圖16 :本發明之電漿處理裝置之第4實施例之斷面 圖。 圖17:電漿處理裝置之第1習知例。 圖18:電漿處理裝置之第2習知例。 〔符號說明〕 1 天板，2 側壁’3、 4、 1〇 絕緣物， 5 底板，6、 8 閘閥，7 搬送室， 9 真空排氣裝置，11 基板保持器， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐）_~~T\Q~. J1-----；----^裝-- (請先閱讀背面之注意事項再成、寫本頁) 訂 > 經濟部中央標準局負工消費合作社印聚 Λ7 B7 五、發明説明（17 ) 12a，12b，605 噴嘴，14 基板， 15a，15b，15c，15d 微波導入部， 16a，16b，16c，16d，201a，201b ，201c，201d 介電體， 17a，17b，17a’ > 17a" ，117，118 ，：L19，120，121，410，602 永久磁鐵 ，1 8 a，1 8 b 軛， 19a，19b，19c.高頻電源， 20 相位調整器， 21a ，21b ，21c ，2-ld，603a > 603b ，603c，603d 波導管， 24 微波振盪器，25 絕緣體， 26，28a，28b，28c，28d，28e， 302a，302b，302c，302d 檢波器’ 27a，27b，27c T分歧波導管， 2 9a，29b，29c，29d，301a，301b ，301c，301d 短線調諧器， 100 * 604 ' 606 處理器， 210a，210b，210c，21〇d 線圏’ 220a ，220b，220c ，220d 線圏用電源 >2 3 0 線圈電流控制器， 2 1 1 a，2 1 1 b，2 1 1 c，2 1 1 d 強磁性體’ 400 微波電源，426 短線調諧器控制器’ 511f，512f，513f，514f，515f， 本纸張尺度適用中國國家標準（CNS ) Λ4規格（210 X 297公趁）' -20- (請先閲讀背面之注意事項再瑱寫本頁) :裝·IA 7 ____._ B7 V. Description of the invention (7) is 2. The four waveguides 21a, 21b, 21c, and 21d that are divergent are respectively connected to the microwave introduction sections 15a, 15b, 15c, and 15d of the processing chamber 100. Figure 6 is An oblique view of the processing chamber 100. In Fig. 6, the description of the transfer chamber 7 and the gate valve 6 is omitted for simplicity. The stub tuners 3 0 1 a, 301b ′ 301c, and 301d use manual three stub tuners. In the figure, the waveguides 21a, 21b, 21c, and 21d connected to the microwave introduction portions 15a, 15b, 15c, and 15d are bent in the vertical direction by a distance within 4 times of the wavelength in the tube from the processing room 100. At the same time, at a distance of less than 10 times the wavelength in the tube from the processing chamber 100, for example, electrically-enabled tunable tuners 301a, 301b, 301c, and 301d and detectors 30 2 a, 302b, and 302c are connected, respectively. 302d as a matching component. In addition, a stub tuner controller 4 2 6 俾 is provided to detect the wave source, reflected wave source, reflection coefficient, phase output from the detectors 23a, 23b, 23c, and 23d, and control the stub tuner 3 0 1 a. , 301b, 301c, 301d ° The microwave emitted from the oscillator printed by the Central Standard of the Ministry of Economic Affairs and the Bureau of Work and Consumer Cooperatives passes through the insulator, passes through the T branch waveguide twice, and then introduces the 4 branch waveguide. Each of the 4 branch waveguides has a cut-line tuner and a detector for detection. Controls the standing wave state in the waveguide. 4 points The divergent waveguide is connected to each processing chamber, and the microwave is introduced from the circumferential direction at 4 places in the processing chamber. When microwaves are irradiated into the processing chamber, high-energy electrons are generated in the electron cyclotron resonance area near the microwave introduction part, and plasma is generated by the collision between the generated high-energy electrons and molecules and atoms. This paper size applies Chinese National Standard (CNS) A4 specification (210 × 297 mm) -1〇 · A7 ____B7 V. Description of the invention (β) Permanent magnets configured by sequentially changing the polarity on the outside of the processing chamber form a horizontal pattern inside the processing chamber. Cut magnetic field. Permanent magnets are formed by osmium, cobalt, etc. with high residual magnetic flux density (about 11000G). The cross-section magnetic field is formed in this way. It has a strength of several Gauss near the inner wall of the processing chamber. Becomes zero in the center of the processing chamber. That is, the plasma can be sealed in the extremely weak magnetic field of several Gauss, so it can produce a uniformly distributed plasma. In the field of electron cyclotron resonance, microwave absorption is extremely efficient (more than 80%). In addition, high-energy electrons generated in the field of electron cyclotron resonance near the side wall, and the plasma easily diffuses toward the center of the container. Density, uniformity, and large-area plasma generation are possible. Hereinafter, experimental data will be specifically described. First, an argon gas having a pressure of 0.2 Pa was introduced into the plasma processing apparatus, and a microwave was introduced from a 4-branch waveguide to generate a plasma. The measurement results of the electron density of the generated plasma are shown in Fig. 7. It can be seen from Fig. 7 that at a height position of the microwave introduction part, microwaves having a high density of 1 X 1 0 11 or more can be generated. In addition, a uniform plasma having a height of 22 mm on the substrate and a range of ± 100 mm from the center of the processing chamber can be generated and less than ± 5%. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. In order to prove the effectiveness of the present invention, the plasma processing apparatus of the present invention is suitable for the film formation of silicon dioxide. A silicon substrate having a diameter of 8 inches was transferred from the transfer chamber to the substrate holder 11. Next, an argon gas, an oxygen gas, a silane gas, etc. are introduced into the processing chamber from the nozzles 2a, 12b, and a microwave is introduced from a 4-branch waveguide. In the field of electron cyclotron resonance, high-energy electrons collide with gas molecules and ionize them to form a high-density uniform plasma. At the same time, some gas molecules become free due to conflicts in the plasma. Basic paper dimensions are applicable to Chinese national standards隼 (CNS) Λ4 specification (210X297 male f) -11-Printed by the M Industrial Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 ______ B7 V. Description of Invention (9). Silane free radicals combine with oxygen to form a silicon dioxide film on the substrate. The distribution of the formed silicon dioxide film is shown in FIG. 8. M1, M2, M3, and M4 in FIG. 8 are the directions of incidence of microwaves. In addition, 3 1 0W, 3 0 0W, etc. represent the microwave power sucked into the plasma from the waveguide, respectively. It can be seen from FIG. 8 that it is suitable for a 4-branch waveguide system. On a silicon substrate with a diameter of 8 inches, at a film formation rate of 500 nm / min, a film formation rate of ± 1.6% (1σ) can be formed. A good silicon dioxide film. In this embodiment, the diameter of the substrate is 8 inches, but as the processing chamber becomes larger, the processing of larger substrates can also be handled. For reference, Fig. 9 (a) and Fig. 10 (a) are shown in the case where the two-branch waveguide system is applied to the above-mentioned silicon dioxide film formation process, and Fig. 9 (b) is used in the case where the non-branched waveguide system is applicable. , Figure 10 (b). Fig. 9 (a) shows the structure of the applicable two-branch waveguide, and Fig. 10 (a) shows the film thickness distribution. The waveguides are arranged in opposite directions. From Fig. 10 (a), it can be seen that the film formation speed on the straight line connected to the waveguides arranged oppositely is fast, and the film formation speed in the direction perpendicular to it is slow. Therefore, the film thickness uniformity is reduced by 1σ (± 6%). In addition, as shown in FIG. 10 (b), the film thickness distribution of the incident system at one point without divergence in FIG. 9 (b) corresponds to the incident position of the microwave. Therefore, uniformity is reduced by ± 20%. In FIGS. 8 to 10, the top plate and the substrate holder are not applied with a high-frequency voltage, but when the substrate is etched, a high-frequency voltage may be applied to the substrate holder. In this case as well, the four-branch waveguide can obtain a more uniform film thickness distribution than the non-branch waveguide 'two-branch waveguide. As described above, the application of the 4 branch waveguide system 'can obtain excellent uniformity ---------- J equipment -------- order ---- gland (read first read the back Note the re-filled items (r ·· this page), ί, this paper size applies the Chinese National Standard (CNS) Λ4 specification (210 × 297 g t)-12- Printed A7 B7 by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs The good film thickness distribution of (10) is explained. The controllability of the 4-branch waveguide will be described below. In Fig. 1 1, the progressing wave in each waveguide is represented by 5 1 1 ί ~ 5 1 7 f, and the reflected wave is represented by 51 1 r ~ 5 17 r. It can be seen from Fig. 11 that in a 4-branch waveguide system, when any one of the microwaves incident on the processing chamber is reflected by the waveguide, the reflected wave passes through the T-branch waveguide and is transmitted by the other waveguide. Into the plasma. Therefore, it is difficult to control the microwave power drawn into the plasma by each waveguide by only connecting the branch waveguide to the processing chamber. To solve this problem, in this embodiment, the detectors 302a, 302b, 302c, and 3 0 2 d are respectively provided in the 4 branch waveguide to detect the microwave power, reflected power, reflection coefficient and reflection coefficient of the microwave in the waveguide. Phase, even the distribution of standing waves in the waveguide. At the same time, matching elements are provided in at least one of the four branch waveguides. The matching element may use, for example, a stub tuner. With this configuration, the microwave energy absorbed by each waveguide into the plasma can be adjusted by changing the distance of the short line of the stub tuner inserted into the waveguide based on the signal from the detector. For example, when the output power of the oscillator is 1.5kW, the microwave power drawn into the plasma by each waveguide can be set to 300W ~ 3 1 0W », that is, it can be set to an efficiency of 80% or more, and the electricity is drawn by each waveguide. The power of the pulp can be kept slightly equal. When more than 80% of the output power from the oscillator is respirable, it is practically sufficient. In addition, according to this configuration, when the output power of the oscillator is 1.5 kW, the difference between the power of a certain waveguide and the power of the reflected wave can be set to 4 5 0W, and the other waveguide is 2 5 0W ～ 2 6 0W, that is, the microwave power sucked into the plasma by each waveguide can be controlled. Please read the back. Note on the front page. The size of this paper applies the Chinese national standard (CNS > Λ4 specification (210 × 297 mm). | 3 The staff of the Central Bureau of Standards of the Ministry of Economic Affairs and the cooperative printed A7 ___B7 V. Description of the invention (11) Therefore, the controllability of this 4 branch waveguide is sufficiently practical and suitable for mass production devices such as semiconductors. The above-mentioned detector It may not necessarily be the last branched part of the branched waveguide (in the case of a 4 branched waveguide, it is the 4 waveguide part connected to the processing chamber). For example, as shown in FIG. 12, three detectors are provided in the 4 branched waveguide. In addition, a waveguide 3 0 2 e may be provided in the waveguide portion before the divergence on the upstream side of the waveguide without the detector. In FIG. 1, a tuning line is provided from the processing chamber to the angular waveguide. And detectors are also possible. Here, the waveguide phase The substrate is slightly parallel, but not necessarily parallel. Good uniformity should be maintained, and the angle between each of the 4 branch waveguides connected to the processing chamber needs to be set within 90 degrees ± 30 degrees. The waveguide is opposite the substrate The transfer direction is slightly symmetrical, and the distance between the microwave emitted from the oscillator and the processing chamber. It is slightly consistent with each branch waveguide, but this is not necessary. However, the oscillator will reach the above processing through the branch waveguide. When the difference between the distance between the chambers and the branched waveguides is set to be less than the wavelength in the tube of the microwave, good controllability of the microwave can be obtained. In addition, as a result of this film formation, the 4 branched waveguide system is not used, but the Each of the waveguides of the Institute is connected with a matching element, a detector, an insulator, and an oscillator-free branching waveguide system. In particular, when using four waveguide systems without branching, the branching occurs between the waveguides. The absence of interaction makes it easier for the microwave power from the oscillator to be absorbed by the plasma, which can constitute a more efficient processing device. The above is explained using four waveguides as an example. Of course, even if the number of waveguides is 4 or more, a uniform film can be obtained. In this case, when the number of waveguides connected to the processing chamber is set to N, in order to ensure the controllability of the microwave, the Chinese standard is applicable to this paper scale. Standards (CNS> Λ4 specifications (210 > < 297 public 1-14--Γ-I order chain (read the precautions on the back before reading this page)) A7 V. Description of the invention (12) Less than N -1 waveguides are better equipped with matching elements. After the substrate is processed, a film or foreign matter is attached to the wall of the processing chamber, so it needs to be cleaned to remove it. In the above-mentioned conventional examples, NF3, C 2 F 6, CC 1 A fourth-level gas is introduced into the processing chamber, and a high-frequency voltage is applied to the substrate holder. In contrast, in the present invention, in addition to the substrate holder, the top plate and the side wall also apply high-frequency voltage, and the phase can be changed. Therefore, it is possible to effectively etch the entire range of the interior wall of the processing chamber, and therefore, higher-speed cleaning It is possible. FIG. 13 shows a second embodiment to which the present invention is applied. This embodiment is almost the same as the first embodiment. The difference is that the permanent magnets 4 10 are provided outside the waveguides 21a, 21b, 21c, and 21d. Such a magnet structure can also achieve the same performance. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs—Γ --------- installation-.-≫ / (Please read the precautions on the back before filling this page) Line diagram 1 4 is the invention The third embodiment is applicable. This embodiment is roughly the same as the first embodiment. The difference is that coil wires 210a, 210c are provided around the microwave introduction parts 15a, 15c, and a power source 220a, 22c is used to make a current flow through the coil to form an electron cyclotron resonance magnetic field. Ferromagnetic bodies 2 1 1 a, 2 1 1 c are arranged on the outer periphery of 2 1 0 a, 2 1 0 c. With this configuration, a plasma processing device with the same performance can be realized. In particular, the microwave introduction portion is formed in a rectangular shape with a rectangular side length of 5 mm to 20 mm, so that there is no need to worry about insulation damage caused by a microwave electric field, and it is possible to reduce a line 圏 current 必要 necessary to form an electron cyclotron resonance magnetic field to form a small coil. Further, the microwave introduction portions 15a, 15c may be provided with a magnetically permeable magnetic body such as ferromagnetic material. In addition, the size of the paper controlled by the coil power supply 220a, 220c is applicable to the Chinese National Standard (CNS) Λ4 specification (210X 297 g t). ≪ | 5- 1 Printed by the Peugeot Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 5. Description of the invention (13) The coil current 値 can be controlled to control the microwave power sucked into the electric power by each waveguide. A coil current controller 230 is provided to control the coil current 値 and the above-mentioned matching elements in conjunction with each other, so as to form an electric processing device with better controllability. In addition, FIG. 14 is not shown, and two microwave introduction sections 1 5 c and 1 5 d are connected in addition. FIG. 15 is a side view of the processing chamber viewed from the microwave introduction section 15 d. FIG. 16 is applicable to the present invention. The fourth embodiment. In this embodiment, a permanent processing chamber 6 0 4 formed of a temperature-adjustable dielectric body formed of a temperature-adjustable dielectric body is provided in a metal container 6 0 1, and a permanent magnet that sequentially changes polarity is disposed on the outer periphery of the processing chamber 6 0 4. The magnet 602 is used to introduce microwaves into the processing chamber 604 through the waveguides 603a and 603c while forming a transverse magnetic field inside the processing chamber 604. Not shown in Fig. 16, two other waveguides 603b, 603d are connected. Note that description of the temperature-related equipment is omitted. The polarity of the permanent magnet adjacent to the waveguide is the same, and an electron cyclotron resonance area is formed in the processing chamber. In an etching apparatus or a CVD apparatus, a foreign substance adhering to the wall p may be reduced to increase the wall temperature to several hundred degrees Celsius. Even in this case, a plasma processing apparatus having the same performance as that of the first embodiment can be obtained by the above configuration. In the fourth embodiment, permanent magnets of the same polarity may be arranged around the waveguides 603a, 603b, and 603c '603d in the same manner as in Fig. 13. In the same manner as in the third embodiment, in the processing chamber 60, 4 and the waveguides 603a, 603b, 603c, 6 0 3d around the coil to make a current flow, while placing ferromagnetic body around the above line 〇 This paper is applicable to Zhongguanjia County (CNS > M Specifications (210X297) _ 16 _ '_ ”I ^ ^ installed — I n line (please read the precautions on the back before charging this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economy ΑΊ B1 V. Description of invention (14) The above description is based on the treatment of a fully circular substrate. However, using a cube-shaped processing chamber, the waveguides are exactly the same, so that uniform processing of rectangular large substrates used in the manufacture of liquid crystal display devices can be performed. In particular, when microwaves are introduced from the four corners, the effect of uniform treatment is more significant. [Effects of the Invention] According to the above-mentioned plasma processing apparatus of the present invention, the processing object is held in the processing chamber held inside; Formation in the processing chamber A magnetic field forming device for a field; and a waveguide for introducing microwaves into the processing chamber; a plasma processing device for generating a plasma in the processing chamber by the magnetic field from the microwave antimagnetic field forming device of the waveguide to process the object to be processed; It is characterized in that there is one generator for generating the above-mentioned microwaves, and a plurality of the above-mentioned waveguides for introducing the microwaves from the generators are connected to the processing chamber. Furthermore, the plasma processing apparatus according to the present invention is Equipped with: a plasma-generating processing chamber while the object to be processed is kept inside: a waveguide connected to the chamber to introduce microwaves to generate plasma; provided on the outer periphery of the waveguide, and on the waveguide and the above processing At least a part of the room has the strength of an electron cyclotron resonance magnetic field, and forms a first permanent magnet that cuts a magnetic field in the direction of the propagation of the microwave in the waveguide and the direction of the magnetic field is reversed; and alternately changes the polarity around the processing chamber, It is equipped with a plurality of second permanent magnets, and is characterized in that: one generator for generating the above microwaves is used for The above-mentioned waveguides introduced by the microwave of the device are connected in the processing chamber with a plurality of pieces, for example, four. Therefore, the high-energy electrons generated locally near the wall are easy to go to J-, ---- 丄-, 1 ^ --- --11T ------ ^ .. " N) (Please read the precautions on the back before 埤 ftT page) _ \ This paper size is applicable to China National Standard (CNS) A4 size (2IOX 297mm t) -17- A7 B7 Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Consumers Cooperative, Cooperative V. Invention Description (15) 1 | The central part of the processing room is diffused, and at the same time, electricity u ^ e can be generated in the entire processing room, and permanent magnets are used. The formed transverse magnetic field, therefore, the magnetic field strength I in the sealed plasma field is extremely small > the formation of a uniform plasma is possible. 1 In particular, when more than 4 waveguides are connected to the processing chamber, read the large area first. 1. The average of the substrates-it is possible to generate the same plasma necessary for processing, and it is easy for Vi to generate δ 丨 I large area. , Uniform, high-density plasma, and can realize the small attention type I of the device. When applied to plasma CVD or etching, it can provide a small, high-performance plasma processing device. % I Install a page ____ · 1 Brief description of the IC drawing] 1 | Figure 1; Sectional view of the first embodiment of the plasma processing apparatus of the present invention 1 I 0 1 Order I Figure 2 • Figure 1 of Plan view of the plasma processing device. 1 FIG. 3: A sectional view of the plasma processing apparatus of the present invention, the first embodiment of the first embodiment, in which the angle of FIG. 1.1 is changed. Du 4: Front view of the plasma processing device in Figure 1. / 'Line I Fig. 5 * The structure diagram of the microwave 11 circuit in the first embodiment of the plasma processing apparatus of the present invention. 1 1 Figure 6: Figure 1 of the electrical failure processing device] L Example of strabismus ° 1 ISI _ 7 The distribution characteristics of the electron density in the gas-gas plasma of an embodiment of the present invention returns to Figure 0 1. Fig. 8 Film thickness distribution when a silicon dioxide film is formed by using an embodiment of the present invention 0 1 1 Fig. 9 (a): The silicon dioxide film formation process uses 2 branch waveguides [1 This paper size applies Chinese national standards (CNS ) Λ4 specification (210X297 public expense) -18- A7 A7 Printed by the Central Laboratories of the Ministry of Economic Affairs, Consumer Cooperatives, V. Invention Description (16). Fig. 9 (b): The structure diagram of the _field_combination using a non-branching waveguide system. * · ........—............, Fig. 10 (a): Film thickness distribution when the silicon dioxide film formation process uses a two-branch waveguide tube system. Figure 10 (b): Film thickness distribution when using a non-branched waveguide system. Figure 11: A schematic diagram of the progressive and reflected waves of the microwave in the branched waveguide in the present invention. Fig. 12: A diagram showing the installation position of a detector in an embodiment of the present invention. Fig. 13 is a front view of a second embodiment of the plasma processing apparatus of the present invention. Fig. 14 is a front view of a third embodiment of the plasma processing apparatus of the present invention. FIG. 15: A side view of FIG. 14. Fig. 16 is a sectional view of a fourth embodiment of the plasma processing apparatus of the present invention. Fig. 17: First known example of a plasma processing apparatus. Fig. 18: Second conventional example of a plasma processing apparatus. 〔Explanation of symbols〕 1 top plate, 2 side walls' 3, 4, 10 insulation, 5 bottom plate, 6, 8 gate valve, 7 transfer room, 9 vacuum exhaust device, 11 substrate holder, this paper size applies to Chinese national standards (CNS) A4 specification (210X 297 mm) _ ~~ T \ Q ~. J1 -----; ---- ^ equipment-(Please read the precautions on the back before writing, write this page) Order > Yin Ju Λ7 B7, Consumer Cooperatives, Central Standards Bureau, Ministry of Economic Affairs 5. Description of the invention (17) 12a, 12b, 605 nozzles, 14 substrates, 15a, 15b, 15c, 15d Microwave introduction section, 16a, 16b, 16c, 16d , 201a, 201b, 201c, 201d dielectrics, 17a, 17b, 17a '> 17a ", 117,118: L19, 120, 121, 410, 602 permanent magnets, 1 8 a, 1 8 b yoke, 19a , 19b, 19c. High-frequency power supply, 20 phase adjuster, 21a, 21b, 21c, 2-ld, 603a > 603b, 603c, 603d waveguide, 24 microwave oscillator, 25 insulators, 26, 28a, 28b, 28c , 28d, 28e, 302a, 302b, 302c, 302d geophone '27a, 27b, 27c T branch waveguide, 2 9a, 29b, 29c, 29d, 301a, 301b, 301c, 301d short Tuner, 100 * 604 '606 processor, 210a, 210b, 210c, 2〇d line' 220a, 220b, 220c, 220d line power supply> 2 3 0 coil current controller, 2 1 1 a, 2 1 1 b, 2 1 1 c, 2 1 1 d ferromagnetic body '400 microwave power supply, 426 short-line tuner controller' 511f, 512f, 513f, 514f, 515f, this paper size applies to Chinese National Standard (CNS) Λ4 Specifications (210 X 297 males) '-20- (Please read the precautions on the back before writing this page):
-II A 7 B7 五、發明説明（18 ) 5 1 6 f，5 1 7 f 進行波， 511r，512r，513r，514r，515r 5 1 6 r > 5 1 7 r 反射波，601 金屬製容器。 . I > 私衣 I '1T (諳先閱讀背面之注意事項再填涔本頁) > 經濟部中央標隼局負工消f合作社印裝 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X 297公t ) -21 --II A 7 B7 V. Description of the invention (18) 5 1 6 f, 5 1 7 f progressive wave, 511r, 512r, 513r, 514r, 515r 5 1 6 r > 5 1 7 r reflected wave, 601 metal container . I > Private clothing I '1T (谙 Please read the notes on the back before filling in this page) > Printed by the Central Bureau of Standards of the Ministry of Economic Affairs, Cooperative Society, and printed on paper This paper applies the Chinese National Standard (CNS) Λ4 specification (210X 297 male t) -21-