、發明説明（ 經濟部中央梯率局貝工消费合作社印*. 《發明之範圍》 ' 本發明係有關均勻地旋轉被覆一光致抗餘材料於半導 體晶元之方法與裝置，尤特指械後進㈣統刻處理之 前，能均勻地被覆一層光致抗蝕材料於晶元上之方法與裝 置。 《發明之背景》 半導體元件之製造均須經過一系列的處理過程。其中 之一過程乃將光致抗蝕材料沈積於半導體晶元表面上，'以 準備隨後的蝕刻處理過程。在晶元上施加光致抗蝕材料有 很多方法可以採用，但均有其缺點。 可採用的方法中包含浸入法、喷霧法、滚壓法等，大 抵配合液狀光致抗蝕材料而採用者。由於在進行浸入與喷 霧方法時，晶元的後侧可能被塗佈到光致抗蝕材料。上揭 兩種方法乃不適用於半導體器件。滚壓方法通常採用於印 刷電路板，但由於使用此法時甚難控制光致抗蝕材料層的 厚度，因此亦不適用於半導體器件。所以為了克服上揭種 種缺點，乃須採用一種旋轉被覆的方法。 上旋轉被覆方法在嚴謹的控制光致抗祛材料層厚度上而 言，是較佳方法中之一。例如説，假定光致抗蝕層的厚度 為0.5以m，使用旋轉被覆方法時厚度的變動可控制小於 。一g旋轉器件，通常以轂蓋之名而被人知悉者可 在旋轉被覆方法中被採用，傳統式的旋轉被覆裝置如第工 圖所示。 . 本纸張纽適用中圏國家椟丰（CNS)八4胁（2_297公着） n-1— I I I n n n I n n T (請先閲讀背面之注$項再填寫本頁) 發明説明（） 參照第1圖，晶元1 〇以真空吸引力被固定於真空卡 盤7上，且被轂蓋5旋轉。一碗8設罝於真空卡盤7之上空 藉以防止當晶元10旋轉時其所配到的光致抗蝕材料之飛 散。在碗8侧邊的既定位置上形成一排出口 9。一擋杯" 裝設在本裝置的底部，用來收集從碗8漏出之光致抗蝕 料。 旋轉被覆裝置的運作情形如下丨首先，操控一异降機 I2來提异裝有晶元1G的卡盒2達於i空卡盤7之高度。在 卡盒2内的晶元1〇於是連績的被移入真空卡盤7。經過濾 ^^通過一管路供應於晶元1〇表面以吹去晶元10上的 其次’經管路將底漆3施加於晶元1〇，以加強光 餘材料4對晶元1G之枯著力。底漆3可以旋轉法或蒸著法 = 亦可採用底漆蒸著處理或底漆真空 蒸著處理等。 當底漆處理過程完成時，將光致抗储料4經一管路 分配於晶元IGh分配過程可採用雙果系統。在第 系統中錄聽糾的歧抗靖料錄於管路末端 ^從推出，係利用乾燥的氮氣來增加容器内的壓力。、 Explanation of the invention (printed by the Shell Cooperative Consumer Cooperative of the Central Ramp Bureau of the Ministry of Economic Affairs *. "Scope of Invention" '' The present invention relates to a method and a device for uniformly rotating and coating a photoresistive material on a semiconductor wafer, especially a mechanical device Methods and devices for uniformly coating a layer of photoresist material on a wafer before post-etching processing. "Background of the Invention" Semiconductor device manufacturing must go through a series of processes. One of these processes is to A photoresist material is deposited on the surface of the semiconductor wafer to prepare for the subsequent etching process. There are many ways to apply the photoresist material on the wafer, but all have their disadvantages. The methods that can be used include The immersion method, spray method, rolling method, etc. are mostly used in combination with liquid photoresist materials. Because the immersion and spray methods are used, the backside of the wafer may be coated on the photoresist material The two methods disclosed above are not suitable for semiconductor devices. The rolling method is usually used for printed circuit boards, but because it is difficult to control the thickness of the photoresist material layer when using this method, It is not suitable for semiconductor devices. In order to overcome the disadvantages of the above disclosure, a rotating coating method must be adopted. The upper rotating coating method is one of the better methods for strictly controlling the thickness of the photoresistive material layer. For example, assuming that the thickness of the photoresist layer is 0.5 to m, the thickness variation can be controlled less than when using the rotating coating method. One g rotating device, usually known by the name of the hub cap, can be used in the rotating coating method. It is adopted, and the traditional rotating coating device is shown in the drawing.. This paper is suitable for the Central China National Bank (CNS) Ya 4 Waki (2_297) n-1— III nnn I nn T (Please first Read the note on the back side and fill in this page) Description of the invention () With reference to Figure 1, the wafer 10 is fixed on the vacuum chuck 7 with a vacuum attraction force, and is rotated by the hub cover 5. A bowl 8 is set on The vacuum chuck 7 is empty to prevent the photoresist material from scattering when the wafer 10 rotates. A row of outlets 9 is formed at a predetermined position on the side of the bowl 8. A stopper is installed in The bottom of the device is used to collect light leaking from the bowl 8. The operation of the rotating coating device is as follows. First, the alienator I2 is operated to raise the cassette 2 containing the wafer 1G to the height of the empty chuck 7. The wafer 1 in the cassette 2 〇 Therefore, the succession was moved to the vacuum chuck 7. After filtering, it was supplied to the surface of the wafer 10 through a pipe to blow off the wafer 10, and the primer 3 was applied to the wafer 10 through the pipe. In order to strengthen the coercive force of the light residual material 4 on the wafer 1G. The primer 3 can be rotated or evaporated = the primer can be evaporated or the primer can be vacuum evaporated. When the primer treatment process is completed, The dual-resistance system can be used to distribute the photoresistive storage material 4 to the wafer IGh through a pipeline. The ambiguity resistant material recorded in the first system is recorded at the end of the pipeline. To increase the pressure inside the container.
Si 系統，其中使用—仲縮囊經管路的尖 刼壓迫且推出光致抗蝕神料。被覆於晶元1〇上1 層的特定厚度在處理過程的參數中並不具有太大的 影響力。但是，假如施加不足量的光致抗 _表面無法完全為光致触材料層所被覆:。、另一= A7 B7 能 五、發明説明（ ，面，假如施加過量縣致紐材料時，就的背側 被光致抗歸料顺覆，如此則會影響晶元 : 非所欲者。 干實乃 旋轉被覆光致抗餘材料過程係以動力分配遇期 在動力分配週期，光致抗餘材料施加於晶元1G時: 卿j大約以500 RPM的低轉速旋轉。施加光致抗餘= 後，晶元10則以較雨轉速旋轉，而使光致抗蝕材鉍 均勻地分佈於晶元10上。 约 在光致抗蝕材料完成沈積積後，晶元10被從真空卡 盤7上卸下而儲藏於卡盒2以便輪送到爐中繼績其後=處 理過程，亦即軟焙過程。 旋轉被覆過程使用轂蓋5，儘管如此仍有其缺蘇。尤 其是在晶元10上甚難獲得一層光致抗餘材料的均勻厚 度。轂蓋5旋轉而產生的離心力使光致抗蝕材料徙轉轴離 去。由於離心力大小與離轉轴的距離有關，光致抗蝕材料 的移程依其在晶元上所在位置而變動。這使光致抗蝕劑被 覆層在晶元10上的分佈不均勻。 為克服上揭缺點，曾有幾種嘗試與裝置之揭示。其中 之一種裝置為公開於韓國專利公報以(_1〇497號者，其包 含一内碗，設置於轂蓋與包覆轂蓋的外碗之間。當晶元停 止旋轉時，内碗藉一昇降機構同時上异。當内碗上异而包 覆晶片時，晶元中心的空氣的移動係與晶元周圍者相同。 在韓國專利公報93-8859號中揭示一種加強晶元上光 致抗蝕劑厚度均勻性的旋轉被覆方法。其方法中包含三個 表纸張尺度適用中國國家揉準（CNS ) A4规格（210χ297公釐） ---裝-------訂------線 (請先閲讀背面之注f項再填寫本頁) 經濟部中央揉準局貞工消费合作社印装 五 、發明説明（） -追加的-步驟，俟將光致抗蝕劑在晶元表·面上分配完成後才 進行。首先，晶元以第一轉速旋轉一設定的時間。然後 元以較快的第一轉速旋轉另一指定的時間。在以第二轉 旋轉時，晶元以比第二轉速較快的第三轉速間歇旋轉 2秒。在第二旋轉步驟中第三旋轉步驟最好重複二次^ 上。結果在晶元上伴隨不同轉速的旋轉形成風面。人 雖然如，b，上難置與方法未__光致抗蚀材 旱度之所以不均勾乃因沿徑方向變動的離心力所致者 離心力造成光致抗蹄料延徑方向厚度的賴^換含之所 ί配的光致抗⑽料在當轂蓋旋轉而光致餘材料i佈於 整個晶兀表面上時其分配情形會受變動的離心力的影響。' 對光致抗餘材料的分佈有影響的離心力大小丄 轉^上所處崎徑的平方。因此離心力的水 ^抗===離心力最大。這樣不同的離心 厚度不同於晶元其致錄材料層 大半徑 不同於在㈤-晶元其他部位的厚度― ° 目前通狀&^敎差乃大於 “ 4 ’在晶元令心離心力等於零的部位的厚度 本祕纽適用中固國家樣 7公羞） 現象無法澈底的消Si system, in which the saccule is pressed by the tip of the tubing and pushes out the photoresist material. The specific thickness of the 1 layer coated on the wafer 10 does not have much influence on the parameters of the process. However, if an insufficient amount of photoresistance is applied, the surface cannot be completely covered by the photocontact material layer:. , Another = A7, B7, energy 5. Description of the invention (, surface, if an excessive amount of county button material is applied, the back side will be overlaid by photoresistance, which will affect the wafer: undesired. Dry In fact, the process of rotating the photoresistive material is based on the power distribution period. In the power distribution period, when the photoreactive material is applied to the wafer 1G: Qing j rotates at a low speed of about 500 RPM. Applying photoreactive material = Then, the wafer 10 is rotated at a relatively rainy speed, so that the photoresist material bismuth is evenly distributed on the wafer 10. After the deposition of the photoresist material is completed, the wafer 10 is removed from the vacuum chuck 7 It is unloaded and stored in the cassette 2 so as to be transferred to the furnace afterwards = processing process, that is, soft baking process. The rotary coating process uses the hub cap 5, but there are still defects. Especially in the wafer It is difficult to obtain a uniform layer of photoresistive material on 10. The centrifugal force generated by the rotation of the hub cover 5 causes the photoresist material to migrate away from the rotation axis. Since the magnitude of the centrifugal force is related to the distance from the rotation axis, the photoresist The range of the material varies depending on its position on the wafer. This makes the photoresist The coating layer is unevenly distributed on the wafer 10. In order to overcome the shortcomings of the above disclosure, there have been several attempts and devices disclosed. One of the devices is disclosed in Korean Patent Gazette No. (# 0497), which contains a The bowl is arranged between the hub cover and the outer bowl covering the hub cover. When the wafer stops rotating, the inner bowl is lifted by a lifting mechanism at the same time. When the inner bowl is covered by the wafer, the air in the center of the wafer is covered. The moving system is the same as those around the wafer. A rotating coating method for enhancing the uniformity of the thickness of the photoresist on the wafer is disclosed in Korean Patent Gazette No. 93-8859. The method includes three table paper scales applicable to China National Standard (CNS) A4 (210 x 297 mm) ------------------- Order --- line (please read the note f on the back before filling this page) Central Ministry of Economic Affairs Printed by the Zhunzhen Zhengong Consumer Cooperative Co., Ltd. 5. Description of the invention ()-Additional-Steps: The photoresist is distributed on the wafer surface and surface only after it is finished. First, the wafer is rotated at a first speed of one Set time. Then Yuan rotates at a faster first speed for another specified time. When rotating at the second rotation, the wafer is intermittently rotated for 2 seconds at a third rotation speed which is faster than the second rotation speed. In the second rotation step, the third rotation step is preferably repeated twice. The result is accompanied by a difference in the wafer. The rotation of the rotational speed forms the wind surface. Although people such as b, the difficulty in setting and the method are not __ the reason why the dryness of the photoresist material is uneven is that the centrifugal force caused by the centrifugal force that changes in the radial direction causes the photoresistance to resist the hoof. The distribution of the thickness of the material in the direction of the length of the material is changed. The distribution of the photoresistance material will be affected by the changing centrifugal force when the hub cover is rotated and the photoresistive material i is spread on the entire crystal surface. '' The centrifugal force that has an effect on the distribution of photoresistance material is the square of the sloping diameter where it is located. Therefore, the centrifugal force water resistance === the centrifugal force is the largest. In this way, the different centrifugal thickness is different from the wafer and its material The layer's large radius is different from the thickness at other parts of the ㈤-wafer ― ° At present, the difference between the shape & ^ 敎 is greater than "4 '. The thickness of the part where the centrifugal force of the wafer makes the centrifugal force equal to zero. Ashamed)
裝— --訂— • I — H - · ί請先閑讀背面之注§項再填寫本.頁〕 五 、發明説明（ A7 B7 經濟部中央標準局負工消費合作社印製 《發明之蟪論》' . … 曰本發明提供一種均勾地旋轉被覆一光致抗蝕材料層於 晶元整個表面的方法與裝置，乃藉使晶元中心的離心力大 於零而得者。 、ϋ常如安排晶元在以其本身中心軸回轉同時晶元中心 亦繞其他不同轴旋轉時可增加晶元中心的離心力，晶元的 中…轴的定義係緊靠晶元幾何中心的雜且垂錢義元平 面者。 ： 更明確地説，晶元上均勾分佈的光致抗餘材料層可藉 同方式的組合而完成——其中之—是速同晶元在其 〜軸的回轉’其二是連同晶元環繞其他不同轴的旋 轉，而其轴乃平行於晶元本▲中心軸者。 ^了達成這些與其他伽，本發㈣提供 :被覆光致抗蝕材料層於晶元上之裝置包含第一轉動： 構，用以轉動一轉動連接器環繞第一轴轉動，及一 動機構，其係連接频轉動連接器的外部，當轉動: 環繞第-轴轉動時，第二轉動料可使 轉。第-及第二軸實質上互成平行且相隔trf—轴旋 ，發明在其他方面而言，轉動機構包括g，：：： 接器則包括-轉盤，-轉樑，—環狀轉動鲭二 樑。第-及第二轉動器件可以相同或喊方鳇轉動十子 有連接於轉動連接器外部的多數第二轉動機&轉動。亦可 —.1 ^—1 !| 訂— — I I 1.1、線 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家梂準（CNS ) A4规格（210X297公釐） 五 、發明説明（ ^ _第二轴間的指定 更，例如-隻螺絲，連接 猎满整構件來變 轉動機構相料。_動輕器，域械上與第二 經濟部中央揉準局貝工消费合作杜印*. 餘材料；^元上之2 ’雜提供❸均自鱗被覆光致抗 動連接器Γ第含的㈣有··使轉 動，及用尸私，、 第既疋轉速環繞第一軸轉 繞第二轴旋轉：動=部的第二轉動機構將晶元環 轉動連接器上:動:=第二既 施行方法與裝置’、晶元環繞兩轴回轉係同時 題產生上有離心力接近零的位置這樣的基本問 璉產生。因此本發明乃提供在半導 致抗飯被覆法的方.千㈣晶兀上械均勾的光 《圖示之簡單説明》 下有瞭解本發明之雜及技1 軸容，請參閲以 下有關本發明之詳細説明與附圖。唯所_示乃僅供參 與説明之用，而並非絲對本發賴任何限制者「附圖 第1圖為傳統式旋轉被覆裝置的構造示意圖； 第2圖為本發明旋轉被覆裝置在—實2例中的侧面 第3Α及3S圖為本發明中經修正之轉敗連接器之谓视 為 圖 圖 本纸浪尺度適用中國國家標準（CNS > Μ规格（210X297公m -----------rt—----τιιτ------織 (請先閲讀背面之注意事項再填寫本頁} 經濟部中央橾卑局貝工消费合作社印製 A7 B7 五、發明説明（） 第4A至4C圖為本發明之光致抗蝕被覆層連同各轉軸 的剖面輪廓圖； 第5圖為本發明之旋轉被覆裝置在另一實施例中之侧 視圖；及 第6圖為本發明之旋轉被覆裝置在又一實施例中之侧 視圖。 《圖示中元件名稱與符f虎對照》 第1圖：? 10 :晶元 7:真空卡盤 5 :轂蓋 8 :碗 9 :排出口 11 :槽杯 2 :卡盒 6 :過濾氮氣 4:光致抗蝕材料 3':底漆 第2··圖： 22 :轉轴 20 :第一轂蓋 24 :轉動連接器 30 :第二轂蓋 32 :轉軸 34 :真空卡盤 40 :晶兀 第3A與3B圖： 24 :轉動連接器 A :轴 B :轴 第 4A，4B，4C 圖： B :晶元40本身的中心轴 B :晶元環繞的旋轉軸Install — — order — • I — H-· ί Please read the note § on the back side and fill in this page.] V. Description of the invention (A7 B7 The Ministry of Economic Affairs, Central Standards Bureau, Off-line Consumer Cooperative, printed the "Invention of Invention" "" "... The invention provides a method and device for uniformly rotating and covering a photoresist material layer on the entire surface of a wafer, which is obtained by making the centrifugal force of the wafer center greater than zero. Arranging the wafer to rotate on its own central axis while the wafer center is also rotating around other different axes can increase the centrifugal force of the wafer center. The definition of the central ... axis of the wafer is a miscellaneous and vertical coin close to the geometric center of the wafer. The Yoshimoto plane .: More specifically, the photoresistive material layer uniformly distributed on the wafer can be completed by combining in the same way-one of which is the rotation of the speed of the wafer on its ~ axis. It is together with the rotation of the wafer around other different axes, and its axis is parallel to the wafer's original center axis. ^ To achieve these and other gamma, this hairpin provides: coating a layer of photoresist material on the wafer The device includes a first rotation: mechanism for rotating a rotation The connector rotates around the first axis, and a moving mechanism is connected to the outside of the frequency rotation connector. When rotating: When rotating around the first axis, the second rotating material can rotate. The first and second axes are substantially mutually formed. Parallel and separated by trf-axis rotation. In other aspects of the invention, the rotating mechanism includes g ::: The connector includes-turntable,-rotating beam,-ring-shaped rotating mackerel beam. The first and second rotating devices can Identical or shouting squares. Rotating ten sons has most second turning machines connected to the outside of the turning connector & turning. Also —.1 ^ — 1! | Order — — II 1.1, line (please read the precautions on the back first) (Fill in this page again.) This paper size is applicable to China National Standard (CNS) A4 (210X297 mm). 5. Description of the invention (^ _ The designation between the second axis is changed. The rotating mechanism is as good as it should be. _ Moving light equipment, Yu Machinery and the Central Ministry of Economic Affairs of the Central Ministry of Economic Affairs, Shellfish, consumer cooperation, Du Yin *. Yu materials; The connector Γ contains the following functions: • rotation, and use of corpse private, first speed Rotate around the first axis and rotate around the second axis: The second rotation mechanism of the movement = part rotates the wafer ring on the connector: the movement: = the second existing method and device. There is a basic problem such as a position where the centrifugal force is close to zero. Therefore, the present invention provides a method for semi-resistance to the rice-covering method. Miscellaneous Inventions and Techniques 1 For shaft capacity, please refer to the following detailed description and drawings of the present invention. However, the illustrations are for illustration purposes only, and are not intended to limit any restrictions on the present invention. "Figure 1 of the drawings It is a schematic diagram of the structure of a traditional rotary coating device; FIG. 2 is a side view of the rotary coating device of the present invention in the second example. 3A and 3S are the modified connector of the present invention, which is regarded as a diagram. Paper wave scale is applicable to Chinese national standard (CNS > M specification (210X297m m ----------- rt ------ τιιτ ------ weaving (please read the precautions on the back first) Refill this page} A7 B7 Printed by the Shellfish Consumer Cooperative of the Central Ministry of Economic Affairs, Ministry of Economic Affairs ) Figures 4A to 4C are cross-sectional outline views of the photoresist coating layer of the present invention with each rotating shaft; Figure 5 is a side view of another embodiment of the rotary coating device of the present invention; and Figure 6 is a side view A side view of the invention's rotary coating device in yet another embodiment. "Comparison of component names and symbols in the illustration" Figure 1:? 10: Epistar 7: Vacuum chuck 5: Hub cap 8: Bowl 9: Discharge port 11: Tank cup 2: Card box 6: Filtered nitrogen 4 : Photoresist 3 ': Primer Figure 2 · 22: Rotary shaft 20: First hub cover 24: Rotary connector 30: Second hub cover 32: Rotary shaft 34: Vacuum chuck 40: Crystal Figures 3A and 3B: 24: Rotating connector A: Shaft B: Shaft 4A, 4B, 4C Figure: B: Central axis of wafer 40 itself B: Rotating axis around wafer
T:表示光致抗蝕層厚度的座標 L R:表示光致抗蝕層半徑的座標 * 第5圖： 50 第二轂蓋 C :轴 ~~裝 III訂— I 線 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS > A4規格（210X297公釐） A7 B7 五、發明説明（） ―第6圖： 45 :螺絲臂 46 :突出部 經濟部中央秦準局負工消费合作社印*. 《較佳具體實施例之詳細描述》 第2圖為本發明旋轉被覆裝置在一實施例中之示意 圖，在此實施例中，第一轂蓋20的轉軸22係速接於轉動 連接器24。在轉動連接器24之邊緣裝有第二轂蓋3〇，其 轉轴32係承裝一真空卡盤34之用。真空卡盤32係以真空 吸引力保持晶元40。轉動連接器24將第一轂蓋2〇的轉動 力傳給第二轂蓋30。轉動連接器形狀可以為圓形，如第 3A圖所示之盤狀。當然轉動連接器在本發明之範圍内可 有很多的形狀，例如在第3B圖中之轉動樑24，或十字 架。第一及第二轂蓋20與3〇可用一般的步進馬達。 旋轉被覆裝置的運轉參照第2與第3调説明如下。 當第一轂蓋20環繞第一轴A以既定的轉速回轉時，裝 置有第二轂蓋30的轉動連接器24, 24’也同時環繞A軸轉 動。因此連接器24, 24·的轉動造成第二轂蓋3〇環 轉。同時第二轂蓋30亦回轉於通過晶元中心的a轴。= 意A轴與B轴乃平行但相隔一段距離。轂蓋2〇與⑽同乂 回轉，或互相反向回轉。 、 〇问 假如只考慮第二轂蓋30的回轉，在B轴處靠近晶 中心的離心力幾乎為零，而晶元4G則真空卡盤Μ 一轂蓋2〇的回轉使整個晶元4〇環繞轉勘連 24的a軸旋轉。其结果晶元4❻中心的離心力乃大 C請先閲讀背面之注項#填寫本頁) 裝· 、1Τ A. 本紙張纽逋用中關家榡率（CNS)从胁（训χ297々^ 龌 «中 央 一橾 牟 局 貝 费 合 作 杜 印 裝 五、發明説明（) 使用傳統式的旋轉被覆以求均勾的光致抗蚀層有其 限制，此乃因晶元以其本身的中心為轉轴而回轉時 f中央部份幾乎沒有或甚少離心力。本發明則提供一種 =40環繞另-a轴旋轉的方法，該八轴係平行於晶元二 ^的中心轴，即B轴，但有移位，同時晶元40亦對本身 B轴回轉。 习 第4八至4C圖為本發明在晶元上之光致抗餘被覆 圖，座標T、R分別代表光致抗餘層的厚度與半徑 了説明的方便相對於半徑的厚度尺寸乃被放大。 首先，當第二轂蓋3〇使晶元40對其产身的中心轴細 轉田(以垂直虚線表示），可獲得在第^中的光致抗餘層 的厚度輪廓。該輪廓主要表示針對對稱轴的兩個對稱的& 分，該對稱轴即相當於圖中的虚線，為8轴。光致抗蝕^ 料層的厚度隨距離虚線愈遠而愈減小，亦即從晶元4〇中 心轴B向晶元40的邊緣距離愈大愈減少。在邊緣區域，厚 度再增加。在使用8吋晶元時，光致抗蝕材料層的參考厚 度，即以水平虚線Η表示者，大約為1以m。從參考厚度 變動的程度大約為15A，如第4A圖所示。特別在晶元 中心部份與邊緣的光致抗蝕材料層厚度可能大到參考厚度 ，但在中心與邊緣之間的光致抗蝕材料層厚度 •於參考厚度到Aa。 拿48圖表示光致抗蝕材料層的輪廓，其乃轉動連接 器24, 24’時理論上可能得到的，但須假定光致抗蝕材料係 直接施加於被第一轂蓋20環繞A轴轉動.的轉動連接器24 為 I ----- ..... —H - - I H ' - -I - _ _ 1^1 I I (請先閲讀背面之注意事項再填寫本頁) 11 本紙張纽適用中家棣準（CNS )从胁（21()><297公董） A7 B7 輕濟部中央揉準局負工消費合作社印製 五、發明説明（ -24’時才有可能。在第4B：圖中，A轴係以虚線表示於輪廓 的右侧。因此第4B圖的輪廓剛好代表兩個對稱部份的一 個’其可形成於A轴周圍者。第48圖中的輪廓形狀乃相同 於第4A圖中左侧對稱部分的形狀。 由於晶元的邊緣一般不被使用，所以在半導體製造過 程中在晶元邊緣區域的厚度變化並無重大影響。 是以本發明的焦點放晶元4〇鄰近中心轴B的中心區域 厚度的控制。依照本發明，第一轂g2〇以既定之轉速環 繞A轴-旋轉，同時第二轂蓋30以B轴為中心回轉。第二轂 蓋30裝置於靠近轉動連接器24,24，邊緣區域的位置，而亦 被第一轂蓋20的回轉所轉動。藉第一與第二轂蓋20, 30的 同時回轉，裝裁於第二轂蓋3〇上的晶元4〇以第二轂蓋3〇 的轉軸32(B轴)為中心回轉，同時環繞第一轂蓋2〇的轉轴 22(A轴)旋轉。因此晶元4〇乃承受來自其以中心轴B回轉 並環繞A轴旋轉的離心力影響。 如在第4C圖^描繪者，综合離心力造成的光致抗蝕 材料層的輪廓乃相同於第4A與4B圖相組合者。所應注意 者光致抗储料層在整個晶元表賴成均句，只有在邊g 區域嚴重㈣厚，但此部分並不驗用。加之射於此方 面技，人士應知道第4C圖所示的光致抗蝕材料層的厚产 =不等於第4A與4B圖中所示厚度相加者，雖財描 提到其為兩輪廓的組合。此乃因第48圖所示者係基於 设性的光致抗兹材料沈積於轉動連接器24, 上者。 12 各紙張尺度適用中國國家標準（CNS ) A4规格（2丨〇χ297公釐） (請先閲讀背面之注意事項再填寫本頁) •裝. 、ττ· A7 A7 ½¾中央標率局員工消费合作杜印«. 發明説明（ •'第5圖説明本發明旋轉被覆裝置在另—實施例中的應 用，其中包含複數的第二轂蓋3〇與5〇各對其中心轴B#c 回轉，藉此可以同時對數個晶元施加被覆層。 第6圖説明本發明旋轉被覆裝置在又一個實施例中的 應用。此實施例中，有複數的螺絲臂45沿徑方向與轉動 連接器24, 24相結合，其範圍涵蓋自中心至週邊。螺絲臂 45的一端可轉動式的固定於轉動連接器24, 24,的突部 46。因此第二轂蓋30可與螺絲臂45的螺紋移動一同移 動，結果轉動連接器24, 24*的中心轴(a轴)與第二轂蓋3〇 的中心轴(B轴）間之距離可以調整。亦即第二轂蓋如的旋 轉半徑可藉螺絲臂45予以調整。其特定距離的調整係基 於第紙4B，扣圖中所描述之综合厚度輪賴得被覆廣的 均勻性予以評估後才做決定。 _ 因此如依本發明的裝置可消除晶元上施加光致抗蝕材 料時在晶元上出的幾乎無離心力的區域，其法為將晶元對 其中心轴回轉，同時環繞平行於其中心轴的另一轴旋轉。 以上以數個實施例詳述了本發明的内容，熟習於此方 面技藝的人士可能對本發明的形式與細節做各種變更，但 不脱離本發明申請專利範圍的精神範疇。例如説包覆第二 轂蓋，碗可以沿轉動連接器的周邊裝置，如此則其他晶& 可免受光致抗蝕材料的飛濺。轉動連接器亦可改變其型式 為環狀，這樣飛散的光致抗蝕材料可經環狀轉動連接器的 中央開口區更為容易的排放。 ^^1 ^^1 t^i - - 1 ϋ -- - - - - --I---- (請先閲讀背面之注意事項再填寫本頁)T: Coordinates representing the thickness of the photoresist layer LR: Coordinates representing the radius of the photoresist layer * Figure 5: 50 Second hubcap C: Shaft ~~ Binding III-I line (Please read the note on the back first Please fill in this page again for this matter) This paper size applies Chinese national standard (CNS > A4 size (210X297mm) A7 B7 V. Description of the invention () ― Figure 6: 45: Screw arm 46: Central part of the Ministry of Economic Affairs Qin Zhun Printed by the Office of the Consumer Cooperative Cooperative Association *. "Detailed description of the preferred embodiment" Figure 2 is a schematic diagram of an embodiment of the rotary coating device of the present invention. In this embodiment, the rotating shaft 22 of the first hubcap 20 is Quickly connected to the rotary connector 24. A second hub cap 30 is mounted on the edge of the rotary connector 24, and a rotary shaft 32 thereof is used for holding a vacuum chuck 34. The vacuum chuck 32 is used to hold the crystal with a vacuum attraction force. Yuan 40. Rotating connector 24 transmits the rotating force of the first hub cover 20 to the second hub cover 30. The shape of the rotating connector can be circular, as shown in Figure 3A. Of course, the rotating connector Many shapes are possible within the scope of the invention, such as the rotating beam 24 in Figure 3B, or the cross The first and second hubcaps 20 and 30 can use ordinary stepping motors. The operation of the rotary coating device is described below with reference to the second and third adjustments. When the first hubcap 20 rotates around the first shaft A at a predetermined speed At this time, the rotating connectors 24, 24 'of the device having the second hub cover 30 also rotate around the A axis at the same time. Therefore, the rotation of the connectors 24, 24 · causes the second hub cover 30 to rotate. At the same time, the second hub cover 30 also Rotate around the a-axis passing through the center of the wafer. = It means that the A-axis and B-axis are parallel but separated by a distance. The hubcap 20 rotates with the same or opposite to each other., 〇 Ask if only the second hubcap is considered The rotation of 30, the centrifugal force near the center of the crystal at the B axis is almost zero, and the rotation of the wafer 4G, the vacuum chuck M, and the rotation of the hub cover 20 rotates the entire wafer 40 around the a axis of the rotation survey 24. Its Results The centrifugal force at the center of the wafer 4❻ is large. Please read the note on the back #Fill this page first.) · 1T A. This paper uses the Zhongguan Jiaxuan rate (CNS) from the threat (training x297々 ^ 龌 « The Central Bureau of Economic Affairs, the Bureau of Fees and Cooperation, Du Yinzhuang 5. Description of the Invention () The traditional rotating cover is used to achieve uniformity. The resist layer has its limitations. This is because the central part of f has little or no centrifugal force when the wafer rotates with its own center as the axis of rotation. The present invention provides a method of rotating around the other -a axis. The eight-axis system is parallel to the central axis of the wafer, that is, the B-axis, but there is a shift, and the wafer 40 also rotates to the B-axis of itself. Figures 48 to 4C show the invention on the wafer. Photoresistance coating, the coordinates T and R respectively represent the thickness and radius of the photoresistance layer. For convenience of explanation, the size relative to the thickness of the radius is enlarged. First, when the second hub cap 30 makes the wafer 40 pairs The center axis of the birth body is thinly turned (indicated by a vertical dashed line) to obtain the thickness profile of the photoresistive residual layer in the second section. The outline mainly represents two symmetrical & points for the axis of symmetry, which is equivalent to the dotted line in the figure and is the 8 axis. The thickness of the photoresist material layer decreases as the distance from the dotted line increases, that is, the distance from the central axis 40 of the wafer 40 to the edge of the wafer 40 decreases. In the edge area, the thickness increases again. When using 8-inch wafers, the reference thickness of the photoresist material layer, which is represented by the horizontal dotted line Η, is approximately 1 to m. The degree of variation from the reference thickness is approximately 15A, as shown in Figure 4A. In particular, the thickness of the photoresist material layer at the center and edges of the wafer may be as large as the reference thickness, but the thickness of the photoresist material layer between the center and the edges is from the reference thickness to Aa. Take the 48 figure to show the outline of the photoresist material layer, which is theoretically possible when the connectors 24, 24 'are rotated, but it must be assumed that the photoresist material is directly applied to the A axis surrounded by the first hub cover 20. Turn. The turning connector 24 is I ----- ..... —H--IH '--I-_ _ 1 ^ 1 II (Please read the precautions on the back before filling this page) 11 copies Paper New Zealand is applicable to China National Standards (CNS) Congxiu (21 () > < 297 public directors) A7 B7 Printed by the Central Consumers Bureau of the Ministry of Light Industry Printed by the Consumers ’Cooperatives of the V. Only available when the invention description (-24 ') May. In Figure 4B: the A-axis system is shown on the right side of the outline with a dashed line. Therefore, the profile in Figure 4B just represents one of the two symmetrical parts, which can be formed around the A-axis. Figure 48 The outline shape in is the same as the shape of the left symmetrical part in Figure 4A. Since the edge of the wafer is generally not used, the thickness change in the edge region of the wafer during the semiconductor manufacturing process has no significant impact. The invention focuses on controlling the thickness of the central region of the wafer 40 near the central axis B. According to the present invention, the first hub g20 is The rotation speed rotates around the A-axis, and the second hubcap 30 rotates around the B-axis. The second hubcap 30 is installed near the rotary connectors 24, 24, the edge area, and also by the first hubcap 20. Rotated by the rotation. By simultaneously rotating the first and second hubcaps 20 and 30, the wafer 40 mounted on the second hubcap 30 is centered on the rotation axis 32 (B-axis) of the second hubcap 30. At the same time, it rotates around the rotation axis 22 (A axis) of the first hubcap 20. Therefore, the wafer 40 is subjected to the centrifugal force from the rotation around the central axis B and the rotation around the A axis. As depicted in Figure 4C ^ The profile of the photoresist material layer caused by the integrated centrifugal force is the same as that of the combination of Figures 4A and 4B. It should be noted that the photoresistive material layer is a uniform sentence throughout the entire wafer, only serious in the area of edge g. The thickness is thick, but this part is not tested. In addition to this technique, people should know the thickness of the photoresist material layer shown in Figure 4C = not equal to the thickness shown in Figure 4A and 4B However, although it is mentioned in the description that it is a combination of two contours, this is because the photoresistive material is deposited on the basis of Dynamic connector 24, the above. 12 Each paper size applies the Chinese National Standard (CNS) A4 specification (2 丨 〇χ297 mm) (Please read the precautions on the back before filling in this page) • Install. Ττ · A7 A7 ½¾The consumer cooperation cooperation of the Central Standards Bureau Du Yin «. Description of the invention ('Figure 5 illustrates the application of the rotating coating device of the present invention in another embodiment, which includes a plurality of pairs of second hub caps 30 and 50 Its central axis B # c is rotated, whereby coating layers can be applied to several wafers at the same time. Figure 6 illustrates the application of the rotating coating device of the present invention in yet another embodiment. In this embodiment, a plurality of screw arms 45 are combined with the rotary connectors 24, 24 in the radial direction, and the range covers the center to the periphery. One end of the screw arm 45 is rotatably fixed to the protrusion 46 of the rotary connector 24, 24 ,. Therefore, the second hub cap 30 can be moved together with the screw movement of the screw arm 45. As a result, the distance between the central axis (a axis) of the rotating connectors 24, 24 * and the central axis (B axis) of the second hub cap 30 can be adjusted. Adjustment. That is, the turning radius of the second hub cap can be adjusted by the screw arm 45. The adjustment of the specific distance is based on paper 4B. The comprehensive thickness wheel described in the button picture is evaluated after the uniformity of the wide coverage is determined. _ Therefore, the device according to the invention can eliminate the almost centrifugal-free area on the wafer when the photoresist material is applied on the wafer. The method is to rotate the wafer to its central axis while surrounding the wafer parallel to its center. The other axis of the shaft rotates. The content of the present invention has been described in detail in the above several embodiments. Those skilled in the art may make various changes to the form and details of the present invention without departing from the spirit of the scope of patent application of the present invention. For example, by covering the second hub cap, the bowl can be rotated along the peripheral device of the connector, so that other crystals & are protected from the splash of photoresist material. Rotating the connector can also change its type to circular, so that scattered photoresist material can be more easily discharged through the central opening area of the circular rotating connector. ^^ 1 ^^ 1 t ^ i--1 ϋ-------I ---- (Please read the precautions on the back before filling this page)