TW394709B - Method of wet processing electronic components using process liquids with controlled levels of gases - Google Patents

Abstract

The present invention is related to wet processing methods for electronic components using process liquids having controlled levels (I.e. amounts) of gases. The present invention provides methods of wet processing where at least two process liquids used during a wet processing procedure contain different levels of gases. Sonic energy may optionally be used in one or more wet process steps of a wet processing procedure to enhance results. The methods of the present invention can result in, for example, improved cleaning or reduced particle contaminating during a wet processing procedure.

Description

A7 ______B7_____ 5. Description of the Invention (/) Background of the Invention The present invention relates to a wet processing method for manufacturing electronic components, including precursors of electronic components such as semiconductor wafers used in integrated circuits. More specifically, the present invention relates to a method of wet processing electronic components using one or more processing liquids whose gas levels (ie, quantities) are controlled. BACKGROUND OF THE INVENTION Wet processing methods are used intensively during the fabrication of integrated circuits, and typically include electronic components such as semiconductor wafers, flat plates, and other component precursors. Wet processing methods can be used to prepare electronic component precursors for processing steps such as oxidation, diffusion, ion implantation, crystal axis growth, chemical vapor deposition, and semi-circular silicon grain growth or combinations thereof. Generally, electronic components are placed in a tank or container and are exposed to a continuous stream of reactive chemical process liquids and water washing liquids. This process liquid can be used without limitation, for etching, photoresistance removal and pre-diffusion cleaning and other electronic component cleaning steps. See U.S. Patent Nos. 4,577,650; 4,740,249; 4,738,272; 4,633,893; 4,778,532; 4,917,123; and EPOO 233 184, assigned to the same assignees and semiconductor wafer cleaning technology manual Pg. 111-151 "Wet Chemical Processes-Aqueous Cleaning Processes" (edited by Werner Kern, Noyes Publication Parkridge, NJ 1993), the disclosure of which is incorporated by reference. In a typical wet process, a ladle element is considered to be a single container (for example, open or closable for the environment), or a wet bath (a system with several baths open). Electronic components are exposed to reaction chemistry. ___ 3 _ ^^ _ ---------- install-ί-t (Please read the precautions on the back page first) Order

丨 丨 V Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives. The paper size is applicable to China National Standards (CNS) A4 (210X297 mm) A7, __ ^ ___ B7 __ ^ ____ V. Description of the invention (Y) Process liquid such as To remove (eg, rinse) contamination from electronic components or etch parts of the surface. After the chemical treatment step is performed, chemicals are attached to the surface of the electronic component. The attached chemical is optionally removed from the surface of the electronic component before the electronic component is treated with the liquid in a secondary reaction so that the chemical residue does not contaminate the next chemical processing step. Traditionally, attachment chemicals have been removed using a washing liquid such as deionized (DI) water. 'After the chemical treatment step is completed, the electronic components are usually dried. Drying electronic components can be achieved in different ways, with the goal of ensuring that no contaminants remain or are generated during the drying process. Drying methods include centrifugal force from evaporative, rotary washer dryers, direct-displace ™ drying, steam or chemical drying of wafers, including methods and apparatus, which are disclosed in U.S. Patent Nos. 4,778,532 or 4,911,761. An important consideration for an effective wet treatment method is that the electronic components manufactured by this process are particularly clean (ie, with minimal particulate contamination and minimal chemical residues) '. Therefore, much attention should be focused on the development of wet processing methods that lead to reduced particulate contaminants and chemical residues in electronic components. The use of sonic energy at different frequencies has been used to facilitate the removal of particles from electronic components. For example, semiconductor wafer cleaning technology has been supplemented by ultrasonic energy or ultra-high-frequency energy. Supersonic energy is usually defined as vocalizations above human audible frequencies. These frequencies are approximately 18 kHz or higher. Electronic component cleaning using ultrasonic energy is typically performed at frequencies in the range of about 20 kHz to 200 kHz and more preferably in the range of about 40 kHz to 104 kHz. Other preferred sonic energy ranges have been used for washing electronic components in the range of approximately 600kHz to 2MHz. This "high one. _4 _'_ This paper is of the right size. It uses the Chinese national standard (CNS> A4 specification (210 father 297 mm)) (Please read the precautions on the back first and then this page) • Packing. Order the intellectual property of the Ministry of Economic Affairs Bureau ’s consumer cooperation printed A7 _________ B7___ V. Description of invention (,) The frequency “supersonic range” is usually referred to as “supersonic”. As used by the users here, “supersonic energy” will be called acoustic energy, which Ultrasonic ranges below about 600kHz to 2kHz, and even the term "ultrasonic energy" is typically referred to as sounding at any frequency higher than humans can hear. Typically, ultrasonic energy, including ultrahigh-frequency energy, passes through Transduced by a sensor made of piezoelectric material, it becomes polarized when mechanically squeezed and mechanically deformed when polarized. Another positive and negative polarity causes the interactive thickness material to be at the same frequency and ultrasonic waves are generated at In this air chamber, it is believed that the scouring ability of the sonic energy is due to different combinations of cavitation and noise flow. This derived liquid flow can improve the surface from the electronic component Remove particles. Cavity phenomenon is the formation and destruction of gas or vapor bubbles in a liquid subject to pressure changes. During the cavity phenomenon, high-intensity sound waves generate pressure fluctuations in the liquid, which cause bubble formation. Pressure fluctuations can also cause this phenomenon. Formation of bubble damage. When bubbles break, bubbles can release energy to displace and disperse particles. Regardless of the advantages of cavitation, cavitation can also cause damage to the surface of electronic components under specific conditions. Energy release can also cause surface pits to be formed in electronic components or cause pattern enhancement, which is formed in electronic components. Damage to the surface of electronic components is typically undesirable. Ultrasonic waves have become commonplace to reduce surface damage, It can be caused by sonic energy. This is because bubbles are usually caused by surface damage by ultra-high sonic waves and large cavities. It does not often take time to form. US patent, __ 5 ^^ dimensions are applicable to Chinese national standards (Cl ^ y A4 Secret （210X297 公 " ---------- 装 —. _ ..., \] (Please read the precautions on the back before Li: Page) Order-line | β Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _________ B7____ V. Description of the Invention (10) No. 5,672,212; No. 5,383,484; No. 5,286,657; No. 5,090,432 reveals the use of supersonic sound During the processing of semiconductor wafers, 6 studies have been performed to determine the effect of particle size, sonic energy, and 'sounding time for particle removal, during the cleaning of semiconductor components by ultra-high sound waves. For example, particle removal was found at Gale Articles It increases with increasing sonic energy, increasing vocalization time, and increasing particle size. The experimental procedure in Gale Articles however does not take into account the gas leveling effect of the treatment liquid used for particle removal. Although it is desirable that the gas used in the processing liquid during wet processing exists in a specific environment, the presence of the gas in the processing liquid has the opposite effect in a specific environment. For example, it was found that the gas present in the treatment liquid increased the efficiency of the cavitation phenomenon during vocalization. In spite of this advantage, the gas in the liquid otherwise promotes the precipitation of particles during wet processing. This is because particulates tend to be attracted to the gas-liquid interface, such as these surrounding bubbles and when these bubbles contact the surface of the electronic component, particulate contamination can occur. This contaminant is particularly problematic for water-phobic surfaces, such as air bubbles having a tendency to adhere to water-phobic surfaces. Post-wet processing methods do not address these needs during wet processing. Usually, the degassing device is either in (degassing level) or left during the entire wet process. This method does not recognize the effect of the presence of gas in the treatment liquid at each chemical treatment step or scrubbing step or it may even be desirable to add gas to the treatment liquid, which follows this wet treatment step. It has been found that the gas level of the control (such as adjustment) of the treated liquid is ____6____ on the scale applicable to the Chinese National Standard (CNS) M specification 1 21〇 × 297 mm > I (Please read the precautions on the back before this page)-Installation -Ordering · Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _________B7____ V. Invention Description (f)-One or more chemical treatment steps or washing steps can increase the treatment results in the wet treatment step, such as reducing particulate pollutants and / Or improve washing. The present invention provides a method for controlling the gas level of a processing liquid to enhance the results obtained in a wet processing step. The present invention also provides a method for controlling the level of a gas when one or more chemical treatment or rinsing steps include the use of sonic energy. SUMMARY OF THE INVENTION The present invention provides a wet processing method for manufacturing electronic components, including precursors of electronic components such as semiconductor wafers used in integrated circuits. More specifically, the present invention relates to a method of washing electronic components using a wet processing technique by treating liquids including different gas levels. It has been found that by selectively controlling the gas level of the processing liquid used during wet processing, the results of the wet processing steps such as particle removal, surface roughening, or the entire process can be improved. The present invention provides a method for selecting an appropriate gas level for a liquid to be treated, the liquid system being adapted to the steps of the wet treatment process to be performed to enhance the result of the wet treatment. In the embodiment of the present invention, the present invention includes placing an electronic component having a surface in a reaction chamber; controlling the gas levels of at least two processing liquids, at least two processing liquids having different levels of gas; and contacting the electronic components with each Each treatment liquid lasts for a fixed time. The electronic component may also optionally be exposed to sonic energy for at least a portion of a fixed time or may be dried by a drying liquid. The treatment liquids effective in the present invention include active chemical liquids and washing liquids. According to a preferred embodiment of the present invention, the gas level of the processing liquid is controlled based on the surface composition of the electronic component. At the completion of the wet processing step, or subsequent wet place ______ ^ _ 7 _._ ^ ___ This paper size is applicable to Chinese national standards (CNS } A4 size (210X297mm) (Please read the precautions on the back and then C page) • Assembled. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed A7 _________B7_______ 5. The description of the invention (G) is implemented. Or combinations, etc. In a more preferred embodiment, the method of the present invention includes the use of a processing liquid that includes a high level gas in a wet processing step and the use of another processing liquid that includes a low level gas in the same wet processing process. Another wet processing step. By using the method of the present invention, many problems of the post-wet processing method can be minimized. For example, the method of the present invention provides a method for contacting the electronic component with a low-level gas including a process liquid to prevent bubble formation Or release, the surface of the electronic component is sensitive to the particle precipitation of air bubbles (that is, the surface of water such as oxygen-free silicon). The present invention also provides A method of contacting the electronic component with a low gas including a process liquid to determine a low oxygen level (preferably weight < 20 ppb, and more preferably less than 5 ppb based on total weight of process weight) in a process liquid such as deionization Water when treating electronic components with surfaces that are susceptible to oxygen (such as surfaces having substantially oxygen-free silicon). The present invention provides a method for contacting electronic components with high gases including process liquids, and when the gas of the process liquid is deionized Water or cleaning solutions are useful (such as ultrasonic or ultrasonic cleaning and cleaning processes). Therefore, a cleaning liquid such as deionized water may have a parity gas in a wet processing step, according to, for example, the previous or The subsequent chemical processing steps. The diagram briefly illustrates the diagram of the particle removal efficiency, which is shown as the percentage of particles removed versus the vacuum level of inches of Hg. The pressure of the meter is the second gas of the gas adjustment element. -The pressure contactor filling has a SCI solution using sonic energy during wet processing. _ '__' _8_____ This paper is also applicable to Chinese national standards (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before ^^ this page) • Packing. Order-line · Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (1) Detailed description of the invention The term "electronic component" as used herein includes precursors of electronic components such as semiconductor wafers, first flat plates, and other components (ie integrated circuits) used in the manufacture of electronic components. The term electronic components also includes, for example, CD ROM, Hard disk drive memory disk or polycrystalline module. The term "active processing liquid", "active chemical processing liquid," "chemical liquid", "active chemical" or "active processing liquid," refers to a liquid, which implements some Act on the surface of electronic components. For example, the liquid may be active in removing contaminants such as particles, metals, or organic materials from the surface of the electronic component, or the liquid may be active in etching the surface of the electronic component or growing an oxide layer on the surface of the electronic component. These names are used interchangeably. The name 5 washing liquid is called deionized water or some other liquid, which is used to clean electronic components compared with the processing of electronic components with active chemicals or active chemical treatment liquids. The rinsing liquid may be, for example, deionized water or a very dilute aqueous solution of active or active chemicals (e.g., hydrochloric acid) to prevent the metal from settling on the surface of the electronic component. Ozone is another additive during decanting. The chemical concentration in such a washing liquid is subtle; typically, the concentration is not greater than about 1,000 ppm by weight based on the total weight of the washing liquid. The original purpose of the cleaning liquid was to improve the chemical, penetrant or reaction products from the surface of the electronic components and the reaction chamber, and to prevent the particles from re-precipitating. The name "process liquid," or "processing liquid," means that any liquid comes into contact with electronic components during a wet processing step, such as a wash liquid or an active chemically suitable process liquid. The name "gas" is used in the article "In, in process liquids," meaning '9. This paper size applies to China National Standard (CNS) A4 (210X297 mm) --------- -Installation— (Please read the precautions on the back before this page) Order ------ line · y Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ________B7 V. Description of Invention (浐) ~: Dissolve and capture gas It cannot be ionized in the process liquid. Examples of non-ionizable gases include oxygen, gas, carbon dioxide; hydrogen; inert gases such as helium or argon; or mixed gases. The name liquid includes liquid, gas, and gas phase. The name of the liquid or mixed liquid chemical treatment step "is called exposure to electronic components to active chemical process liquids. The name "wet process step" is referred to as exposing electronic components to a process liquid, such as a wash liquid or an active chemical process liquid. The name "wet process" or "wet process" is referred to as exposing the electronic component to a series of process liquids for special purposes, such as cleaning and etching the electronic component. Wet processing processes may include, for example, contacting electronic components with other process liquids such as vapors or gases, and / or drying electronic components. The name "reaction chamber" is called a single container (which can be enclosed or opened to the environment), baths and other containers suitable for wet processing of electronic components. As used herein, the name "single container" is referred to as a wet processing system, and the entire wet processing process is performed on one container. The container can be opened or closed in the environment. The "closeable direct replacement container" is called any wet processing system. Its electronic components are processed in a container, it can be closed to the environment and the process liquid can be directed through the container so that one liquid replaces the other. Manufacturing includes wet processing techniques, which are commonly described in semiconducting and integrated circuit manufacturing techniques (Reset Publishing Co. Reston, Va.). The description is incorporated into the reference. ， 10 paper size applies to the national standard of one country (CNS) A4 (2 〖0X297 male thin） ^ '---------- installed! -. (Please read the notes on the back before this page} Order -line. Θ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy

Q A7 B7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, the invention method is generally applicable to any wet processing equipment, which has a reaction chamber to surround one or more electronic components, which include a single container system such as a closeable Directly replace container systems, wet platforms, and spray cleaning systems, see, for example, Chapter 1: Overview and Evolution of Semiconductor Wafer Contamination and Cleaning Technology by Werner Kern and Chapter 3: Aqueous Cleaning Processes by Don C. Burkman, Donald Deal, Donald C. Grant, and Charlie A. Peterson in the Handbook of Semiconductor Wafer Cleaning Technology and Wet Etch Cleaning by Hiroyuki Horiki and Takao Nakazawa in Ultraclean Technology Handbook, Volume 1, the disclosure of which is incorporated by reference. In the preferred embodiment of the invention, the electronic components are enclosed in a single container system. Preferably, a single container is disclosed, for example, in U.S. Patent Nos. 4,778,532, 4,917,123, 4,911,761, 4,795,497, 4,899,767, 4,984,597, 4,633,893, 4,917,123, 4,738,272, 4,738,272 Nos. 4,577,650, 5,577,650, 5,571,337, and 5,569,330 are disclosed in the references. The best form of a single container is a closable direct replacement container such as disclosed in U.S. Patent Nos. 4,778,532, 4,917,123, 4,911,761, 4,795,497, 4,899,767, 4,984,597, 4,633,893, 4,917,123, 4,917,123, Nos. 4,738,272 and 4,577,650 'are preferably commercially available as single container systems that are Full-Flow ™ containers, such as those manufactured by CFM Technology, Poiseidon by Steag, and Dainippon Screen. National Standard (CNS) A4 Specification (210X2.97mm) Please read the precautions of A and bind

Line I A7 _______B7 _ _ _ V. Description of Invention (/ D) 820 series. This type of single container system is preferred because the system results in more uniform processing of electronic components. In addition, the chemicals commonly used in the chemical treatment of electronic components are quite dangerous, among which the chemicals are strong acids, alkali metals or volatile solvents. A single container, particularly when closable, reduces the risks associated with such 'process liquids by avoiding environmental contaminants and personnel exposure to chemicals' and by making chemical use safer. Although containers are preferred as described in the aforementioned U.S. patents, any such container known to those skilled in the art can be used without departing from the spirit of the invention. The active chemical process liquids suitable for carrying out the present invention include aqueous hydrochloric acid solution, ammonium hydroxide and a buffer solution including the same components, a mixture of hydrogen peroxide, sulfuric acid, sulfuric acid and ozone, hydrofluoric acid and a buffer solution including the same components, Chromic acid, phosphoric acid, acetic acid and buffers including the same ingredients', nitric acid, ammonium fluoride buffered hydrofluoric acid and compositions. The special process liquid used, the equipment used, the exposure time (ie contact time) and the experimental conditions (ie temperature, concentration, ie the flow of the process liquid) will vary according to the special purpose of the special wet process. Any liquid used in the 淸 washing liquid system of the present invention, which is effective for removing the reaction chemical process liquid from the dam; the sub-element. In selecting the cleaning liquid, such as the nature of the surface of the electronic component being washed, the nature of the pollutants dissolved in the reaction chemical process liquid and the nature of the reaction chemical process liquid should be considered. Moreover, the preset washing liquid should be compatible (i.e. non-reactive) with the structure in contact with the washing liquid. Useful washing liquids include, for example, deionized water, organic solvents, mixtures of organic solvents, ozone water, or compositions. ___ 12 _ ^ __ This ^^ applies to Chinese National Standard (〇 ^) 8 4 specifications (210 father 297 mm) ^ ---------- 1¾ clothing --I _ -.1. (Read first (Notes on the back of this article are read on this page)

Line 1T-'^ Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ________ ^ B7__ — 5. Description of the Invention (") Preferred organic solvents include these organic ingredients for drying liquids, such as ο to ClO alcohol is better Terrestrial Cl to C6 alcohol. Preferably, the washing liquid is deionized water. The washing liquid may optionally include a low-level chemically reactive substance to enhance washing. Examples of such chemicals include hydrochloric acid, hydrofluoric acid, ozone, and surfactants. The concentration of such chemicals in the rinse liquid is typically about 100 ppm or less by weight, based on the total weight of the rinse liquid. The method of the invention can be used in any wet processing process such as etching the surface of a semiconductor wafer to remove the oxide layer from the silicon surface, cleaning the surface of the semiconductor wafer to remove organic, metal or particulate matter or removing the photoresist from the semiconductor wafer. Agent. The invention can be used for controlled oxide etching or for growing oxide layers on semiconductor wafers. Typical etchants for silicon dioxide include hydrofluoric acid or ammonium fluoride buffered hydrofluoric acid. A typical processing area for electronic components will have storage tanks for chemicals such as ammonium hydroxide (NH4OH) or hydrofluoric acid (HF). These reagents are typically stored in concentrated form. They are hydrogen peroxide (H2O2) (31%), NH4OH (28%), hydrochloric acid (37%), HF (49%), and sulfuric acid (H2S (4) (98%) (percent means weight percentage in aqueous solution). This percentage area will also include a storage tank for any vapor and / or carrier gas that can be used to implement the method of the invention (i.e. isopropanol or nitrogen). The reaction chamber in which the electronic components are processed is liquid-connected to the storage tank. The control valve and pump can be used as processing equipment between the storage tank and the reaction chamber. The processing area also preferably includes one or more units for adjusting the gas level in the process liquid ("gas adjustment unit"), which is connected to the reaction chamber. 13 The size of this paper is suitable. Use Chinese National Standard (CNS) A4 specification (210X297 mm) " -----.---- ： — 装 — _ \ —-. (Please read the precautions on the back first (This page)

, TT-line I printed by B7 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention ((V) In a preferred embodiment, the processing area includes a gas adjustment unit to adjust the gas level of deionized water. Before entering the chamber (that is, the liquid is connected to the reaction chamber), and before the chemical reagent is mixed, the reagent will be used in the chemical processing step. It is also considered that the process liquid including the chemical reagent can be passed through a gas adjustment unit. Processing A control system such as a personal computer can be used as a device to detect process conditions (ie flow rate, mixing rate, exposure time, and temperature) and the proper gas level of the process liquid. The reaction chamber suitable for implementing the present invention is preferably a Assembled to generate sonic energy, such as ultrasonic energy and / or ultra-high sonic energy. Suitable sonic energy for implementing the present invention includes energy having a frequency between 20 kHz and 2.0 MHz, more preferably about 40 kHz to 1.2 MHz, And more preferably about 400kHz to 1.2MHz. The optimal sonic energy range is in the ultra-high sonic energy range, and more preferably about 600kHz to 800kHz. Printed by the Property Cooperative Consumer Cooperative. In implementing the preferred embodiment of the present invention, the electronic components are placed in a single container that is used for ultrasonic or ultra-high-frequency energy and the process fluid including the process liquid will be introduced into the container via a valve or injection. Deionized water and chemical reagents, such as ammonium hydroxide (NH4〇H), hydrogen peroxide (Ή202), hydrochloric acid (HC1) and sulfuric acid (H2S〇4) (98%) are preferably stored A tank outside the reaction chamber. The reactor where the electronic components are processed is fluidly connected to the chemical storage tank via a fluid line. The control valves and pumps are preferably used to transport reagents and deionized water from the storage area through the fluid. Pipeline to the reaction chamber. A process control system, such as a personal computer, is preferably used as a device to detect process conditions (ie, flow rate, mixing rate, exposure time, and temperature). For example, a process control system can be used to plan the flow rate And injection level. _ 14 This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) A7 B7 V. Description of invention (^) Consumption by employees of Intellectual Property Bureau, Ministry of Economic Affairs Printed by the agency so that the concentration of the chemical will appear in the reaction chemical process liquid (or washing liquid). The process control system will be used to plan the appropriate level gas in the deionized water or process liquid, the expected level gas It will be implemented according to factors such as special chemical processing steps. The choice of level gas is described in detail below in the process liquid system. Typically 'more chemical reagents are present in the reaction chemical process liquid during a single chemical processing step. For example, a standard rinsing 1 solution (sci) is used in the first step of the rinsing process. A typical concentration volume range for the sci process is from about 5: 1: 1 to about 200: 1: 1 water: hydrogen peroxide: hydrogen Ammonium oxide. Each element of SCI (ie water, hydrogen peroxide and ammonium hydroxide) is maintained in a separate storage container, and each quantity is injected into a channel fluidly connected to the reaction chamber via a process control system. So that the appropriate ratio of each component is achieved. When the ionized water is mixed with hydrogen peroxide and ammonium hydroxide to achieve the appropriate chemical treatment step dilution, the gas amount of the deionized water is preferably adjusted by passing the deionized water through the gas adjustment unit. Intended use of the SCI solution or regardless of the liquid system in the chemical processing step can be performed by a gas adjustment unit, mixing each individual chemical with deionized water. A gas adjustment unit is any form of equipment that controls (ie removes, adds, replaces, or maintains) the level of gas in a liquid. For example, the gas adjustment unit preferably removes oxygen from the liquid in a controlled amount. The gas adjustment unit may also preferably add gas or replace to remove the gas with other gas such as nitrogen or argon to control the quantity. Additionally, all wet processing systems may include one or more gas conditioning units for different process liquids. Preferably, the gas adjustment unit can reduce the level of dissolved and trapped oxygen in the process liquid to about 15 This paper size is applicable to the Chinese national standard (CMS> A4 specification (210X297 mm). Reading and binding line A7 ________B7__ V. Invention Explanation (leaf) 200 ppb or lower and more preferably to about 5 ppb or less. The kind of gas adjustment unit is preferably used for carrying out the method of the present invention such as having one or more gas-liquid contactor elements for separate gas in liquid Preferably, the gas-liquid contactor element is a thin film made of a polymeric material, such as polypropylene, so that gas molecules or vapor molecules pass through the film, when the volume process liquid such as deionized water does not pass. For example, A preferred gas conditioning unit for carrying out the method of the present invention is Hoechst Cdanese

Liqui-Cel® gas-liquid contactor manufactured by Corporation's Separation Products Group. Preferably, the gas adjustment unit has a dragging ability and a vacuum in a control manner, and has controllable process liquids with different flow rates. A preferred method of operating a gas adjustment unit for use in the present invention includes guiding a process liquid, preferably Ground deionized water enters the "liquid side" of the gas-liquid contactor element. The vacuum is preferably evacuated and nitrogen is added to the "gas side" of the gas-liquid contactor element. The gas of the process liquid, such as oxygen and nitrogen, will be controlled by the degree of vacuum and the amount of nitrogen on the side of the gas added to the film. For slightly dissolved gas, the gas adjustment unit operates in accordance with Henry's Law (the mass of a slightly dissolved gas dissolved in a liquid at a certain temperature is proportional to the partial pressure of the gas). Therefore, by controlling nitrogen, oxygen, or other slightly dissolved gases on the gas side of the gas-liquid contactor element, and the total pressure of the gas contacting the liquid, the gas of the process liquid can be controlled. For example, it is expected that, for example, a scrubbing solution for ultra-high sonic energy may be used to increase the full level of the gas by adding a gas such as nitrogen. Moreover, for example, it is expected to reduce the oxygen level, but to increase an amount of nitrogen — ___16______ This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) ---------- installed! --ry (Please read the precautions on the back before this page) Ordering line | _ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention (if) Gas, less than, equal to or more than removed The amount of oxygen. In a more preferred embodiment, the gas conditioning unit includes a two-stage gas-liquid contactor element. Two stages can be run to remove oxygen from the process liquid and replaced with nitrogen in the first stage. In the second stage, the overall nitrogen level can be adjusted to the desired level. In a process embodiment using a Liqui-Cel® gas-liquid contactor, the following conditions can be used: the flow rate of the process liquid (preferably deionized water) is about 13 gpm, the vacuum is about 28 inches Hg Gauge, and The nitrogen purge rate is about 0.5 scfm. After using this treatment, the oxygen level of deionized water is about lppb and the nitrogen level is about 770ppb. An embodiment of the process using a Liqui-Cel® gas-liquid contactor. When high gas levels are expected, the following conditions can be used. The flow rate is approximately 13 gpm; the vacuum is approximately 6 inches of mercury and the nitrogen purge rate is approximately 0.5 scfm. After using this treatment, the oxygen level is approximately 4 ppb and the nitrogen level is approximately 13,000 ppb. High gas levels, particularly nitrogen, are suitable for the scrubbing process, as it has been found that gas can improve the removal efficiency of ultra-high-frequency sonic particles as described below. As recognized by those skilled in the art, the above process conditions are used to obtain high and low level gases of the process liquid are provided and can be changed. For example, those skilled in the art will recognize that the process liquid flow rate, degree of vacuum, and nitrogen scrubbing can be changed to achieve the desired level of gas for the process liquid. It is desirable to use other gases instead of nitrogen scrubbing. ~ It has been found that the gas (non-ionized) level of the process liquid is preferably adjusted in accordance with the special process liquid used to process the electronic components. (Please read the precautions on the back first ^ this buy) ir

Line I The Consumers ’Cooperative System of the Intellectual Property Bureau of the Ministry of Economic Affairs applies the Chinese National Standard (CNS) A4 specification (21〇 × 297 mm) A7 __; _ ^ ___ B7 _ '_ V. Description of the invention (ί“ Surface of the sub-component Composition and / or subsequent wet process steps. In particular, it has been found that the gas level of the process liquid is preferably controlled based on the electronic component's surface composition. After the wet process step is completed, or the subsequent wet process step or Combination situation. For example, when the surface of the electronic component has a protective layer, such as an oxide layer, at the completion of the wet process step, the process liquid gas level is preferably adjusted to be high ("high gas contains gas process liquid"). The protective layer is already available. Provided on the surface of the electronic component, or formed from the reaction of the high gas containing process liquid and the surface of the electronic component. In the preferred embodiment, the sonic energy is used when the electronic component is exposed to the high gas containing process liquid. When the surface of the electronic component is There is essentially no protective layer, such as an oxide layer. When the wet process step is completed, preferably a process liquid has a low gas level (" The gas contains process liquid ") is used. The surface of the electronic component is substantially free of protective layers or the protective layer can be substantially removed from the low gas containing process liquid and the surface of the electronic component. The low gas containing process liquid is preferably used, When no subsequent processing steps are planned, it will change the electronic components to the surface composition has formed a protective layer. For example, when the hydrofluoric acid etching step is implemented in the wet processing step, it is preferred that the hydrofluoric acid process release has a low gas level. Position. When using low gas to contain the process liquid, some energy may or may not be desirable according to the wet processing step. Preferably, sonic energy is not used when the electronic components are in contact with the low gas to contain the liquid. Although theoretically there is absolutely no limitation " It is believed that when the gas contains the process liquid and the use of sonic energy, the increase of the process liquid increases the gas level and the removal of particles, which improves the transmission of ultra-high sonic energy to the process liquid. Furthermore, when a __18____. This paper size applies China National Standard (CNS) Α4 Specification · (mm) I ---------- Yiyi!--Ρ (Please read the back first Precautions on this page) Threading-through the consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs Du printed A7 _B7_______ V. Description of the invention "]) A protective layer such as an oxide appears on the electronic component, or a protective layer is formed on the surface of the electronic component During contact with a process liquid, the protective layer reduces the risk of damage to electronic components when sonic energy is used. In contrast, when electronic components include substantially no protective layer or the protective layer is substantially removed, the process liquid The gas level is preferably low to reduce damage to electronic components. If sonication is used and the surface of the electronic components is reduced in the process liquid, the surface reacts with the gas (such as oxidation). By "low gas contains the process "Liquid" means that the total level of dissolution or capture of non-ionized gas in the process liquid (before or after adding chemical reagents) is preferably maintained under conditions (such as temperature and pressure) below the saturation of the gas in the process liquid 90% of the level in the reaction chamber during the wet process step. The formation of air bubbles in the process liquid in the reaction chamber is preferably avoided. Additionally, the oxygen level is preferably about 0.1% or less, and more preferably 0.01% or less of the saturated oxygen level in the process liquid (determined under reaction chamber conditions during the wet process step). By "high gas contains process liquid", it means that the total level of dissolution or capture of non-ionized gas in the process liquid (either before or after adding chemical reagents) is preferably lower (for example, to maintain approximately the gas in the process liquid 90% or more of the saturation level, which is equal to or higher than the saturation gas level of the process liquid, occurs in the reaction chamber during the wet process step. Therefore, with the high gas containing the process liquid, bubbles may or may not appear According to the gas level of the process liquid. As mentioned earlier, the gas level of the process liquid is preferably controlled based on the presence of a protective layer on the surface of the electronic component, when the wet process step is completed, or ^ _19_; _ this paper Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before ^ i: this page) Binding and Threading Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs A7 _______ B7_ 5 Explanation of the invention (/ f) The protective layer is formed in the subsequent wet process step. By "protective layer," it means that the layer has a surface concentration of at least a single layer of atoms. For oxygen The protective layer preferably has a density of about 15 oxygen atoms per square centimeter. The protective layer can already appear on the surface of the electronic component before being exposed to the process liquid, or formed during the exposure to the process liquid, or during the combination. For example Process liquids used for cleaning ("washing solution") or process liquids for removing photoresist ("photoresist removal solution") tend to oxidize the surface of electronic components to form an oxidizing protective layer such as oxidation Silicon. With this type of process liquid, when used with some energy, the gas level of the process liquid is preferably high. Also, when the electronic component already has a protective layer, such as by exposure to the atmosphere or through a previous chemical treatment Steps such as rinsing, the process liquid does not significantly remove the protective layer (ie, the process liquid manufactures substantially unprotected surfaces) preferably has a high gas level. For example, electronic components that already have a protective layer in the presence of some energy will Exposure to high gas contains washing liquid. It is also possible that the electronic component is exposed to high gas containing etching solution and sonic energy Some protective layers still provide protection during sonication (for example, when lightly etched). In comparison, when the process liquid is used to substantially remove all protective layers such as oxide layers, or electronic components are essentially free of protective layers, low gas A process fluid system is preferred. By "substantially no protective layer" or "substantially removing all protective layers", it is meant that the protective layer on the surface of an electronic component is typically less than a single layer of atoms. For example, using The liquid used in the etching process ("etching solution") is appropriately _____ _20_____ This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) '/, (Please read the precautions on the back before r ^ This page ). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

LiiJ A7 ___; _B7 _ 5. Description of the invention (1) Under wet processing conditions, substantially all protective layers can be removed. In this case, the gas level of the process liquid should be low. And when it is desired to maintain the unprotected surface of the electronic component (i.e., to avoid oxidation), any process liquid to which the electronic component is exposed preferably has a low gas level. By implementing the method of the present invention, the electronic component can be treated with any number of process liquids' when at least two process liquids have different gas levels in a wet process. For example, in a preferred embodiment, the electronic component may be exposed to two process liquids, one of which has a high gas level and the other of which has a low gas level in a wet process. The electronic component can be exposed to the process liquid for any contact time, which achieves the desired wet process step result. For example, the 'electronic components are treated with a cleaning solution, a photoresist removal solution, an etching solution, a cleaning liquid, or any combination solution for any contact time. Moreover, for example, electronic components between chemical processing procedures can be expected to be deionized or dried to remove residual chemicals from the pre-treatment step, or a reactive chemical process liquid can replace the previous chemical process liquid without any intermediate cleaning . Examples of rinse solutions used in the present invention typically include one or more humectants such as acids or bases. Suitable acids for rinsing include sulfuric acid, argon acid, nitric acid or aqua regia. Suitable bases include ammonium hydroxide. The desired concentration of etchant in the cleaning solution will be based on the desired amount of special etchant selected, namely the cleaning. These etchants can also be used with oxidants such as ozone or hydrogen peroxide. A better cleaning solution is "SCI" solution including ice, ammonia and hydrogen peroxide (described previously) and "SC2" solution includes water, hydrogen peroxide and hydrochloric acid. The typical concentration range of SCI solution is from about 5: 1: 1 to 200: 1: 1 by ΗίΟ: Η2〇2: ΝΗ4〇Η. ___ 21 _._ ^ paper; d applies Chinese National Standard (CNS) A4 specification (210X297) (%) (Please read the note on the back page first). Assembling. Ordering line 'Printed by A7 ---: _____ B7_ of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (^) 1 ~ Volume ratio. The typical concentration range of SC2 solution is from about 5.1 to 1000: 1: 1 by the volume ratio of H2O: H2O2: HC1. Suitable etching solutions for use in the present invention include reagents which can remove oxides. The same etchant used in the present invention is hydrofluoric acid, buffered chloric acid, ammonium fluoride or other substances' which generate hydrofluoric acid. The hydrofluoric acid including the etching solution may include, for example, from 4: 1 to about 10,000: 1 by volume ratio of H2O: HF. The photoresist removal solution used in the present invention includes sulfuric acid and oxidizing substances such as peroxide Hydrogen oxide, ozone or a combination of ingredients. Those skilled in the art will understand that different process liquids can be used during wet processing. Additionally, other forms of process liquid may be used during wet processing, such as dry vapor. Other examples of process liquids and fluids that can be used during wet processing are described in "Chemical Etching" by Werner Kern. Published by Thin Press Processes by Academic Press, which is incorporated by reference. Using the method of the present invention, electronic components can be processed in any order by any number of processes. Those skilled in the art will understand that the form and sequence of wet processing will be processed in accordance with that desire. It is also understood that the method of the present invention may include the use of process liquids, where sonic energy is not used and / or gas levels are not controlled in the process liquid, when the electronic components are exposed to at least two process liquids with gas levels in the wet processing program . For example, electronic components can be processed by three process liquids, the first process liquid system water, hydrogen peroxide and ammonium hydroxide SCI solution (80: 3: 1); the second process liquid system water, hydrogen peroxide and SC2 solution of hydrochloric acid (80: 1: 1); etching solution of hydrofluoric acid in the third process liquid system (approximately 10: 1 _ _22 __'___ This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm) ) (Please read the precautions on the back before 'ν-Λ this page)

, TT line Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

.F A7 B7 V. Description of the invention (yp (please read the precautions on the back • this, page) to about 1000: 1 (Ι120): ΗΡ). The order can also be reversed. The method is specifically used for rinsing and etching (ie removing oxides from the wafer surface). SCI and SC2 are preferably high gas levels. The etching solution preferably has a low gas level 'if the etching solution is used to substantially remove oxides from the surface of the electronic component. ¾ In other embodiments of the invention, the electronic components are treated with a concentrated sulfuric acid solution injected with ozone 'and by a hydrofluoric acid solution. This method is particularly effective for removing organic materials such as photoresist (ashing or non-ashing). And particulate materials, and for leaving a lipophilic surface. The sulfuric acid solution preferably has a concentration of about 98% by weight and the ozone is preferably injected at a rate of about i.7 g / min. The hydrofluoric acid concentration range is preferably about 4: 1 to about 1000: 1 (H2O: HF). In this case, a scouring liquid (such as deionized water) is after the sulfuric acid solution and the hydrofluoric acid solution preferably has a high gas level. The hydrofluoric acid solution preferably has a low gas level. Preferably, the program uses sonic energy during the exposure of the electronic components to a sulfuric acid / ozone and below washing solution. In other embodiments of the present invention, printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the electronic components are processed with a further series of process liquids, such as sulfuric acid solution saturated with ozone; followed by hydrogen peroxide and ammonium hydroxide; , Hydrochloric acid and water soluble, liquid. The method is in particular used to remove organics and general rinsing (i.e. removing particles with minimal metal precipitation) leaving a hydrophilic surface. In this case, the process liquid preferably has a high gas level. In another embodiment of the present invention during rinsing, the gas level of the rinsing liquid will follow this special chemical treatment step, which is performed before rinsing. For example, 23 paper sizes are applicable to China National Standard (CNS) A4 specifications (2) 0 > < 297 mm) Member of the Intellectual Property Bureau of the Ministry of Economic Affairs-X Consumer Cooperative printed A7 B7 V. Description of invention (7 ^) '' ' '' 'If the SCI solution was used in the previous chemical processing step, the gas level of the washing liquid is preferably high. If the cleaning oxide is substantially removed after the etching step, the cleaning liquid preferably has a low gas level. If the sonication is desired during the wet process, the sonication period (the sonication time) is the number of times required to implement the desired effect. Preferably, the sonication system is implemented for at least a portion of the contact time, and the electronic component is exposed to the process liquid. More preferably, the sonication is carried out, and the entire contact time is continued, except that the electronic component initially has an unprotected surface, and during the step until a protective layer is formed. In this case, it is possible to pre-delay_ delay the start of the sonic energy until sufficient time has passed through a protective layer to form the female platform. After the electronic component has been treated with a final reaction chemical process liquid, the process fluid can be replaced from the surface of the electronic component using a dry fluid or a washing liquid. On the other hand, the fluid can be discharged from the chamber and the electronic components are washed by one or more washing liquids. The electronic components are then preferably dried by a person skilled in the art. The preferred method of drying uses a beam of dried fluid to directly replace the solution 'in the last place and its electronic components are contacted before drying (hereinafter referred to as "direct replacement drying"). Suitable methods and systems for directly replacing drying are disclosed in U.S. Patent Nos. 4,778,532, 4,795,497, 4,911,761, 4,984,597, and 5,569,330. Other direct dryers that can be used include Marangoni style dryers made by manufacturers of Steag, Dainippon and YieldUp. More preferably, the system and method of U.S. Patent No. 4,791,761 is used to dry the semiconductor substrate. The electronic components are installed in 24 ---------- i ',,' (Please read the notes on the back page first.) Order. Line | ❿ This paper is of suitable size. Use Chinese National Standard (CNS ) A4 size (2! 0X297 mm) A 7 _B7_ __ 5. Description of the invention (y ^) After drying, the components can be removed from the reaction chamber. In the preferred embodiment of the present invention, the electronic components are maintained in a single reaction chamber and close to the environment during all wet processing procedures (i.e. cleaning, washing and drying). In this aspect of the invention, the electronic component is placed in the reaction chamber and the surface of the electronic component is in contact with one or more process liquids, which has a control gas level for a contact time without removing the electronic component from the reaction chamber. The process fluid (including the process liquid) can be continuously introduced into the reactor. For example, a process fluid directly replaces a previous process from the surface of an electronic component, or by exposing a chamber of a process fluid before exposing the electronic component to another process fluid. The final wet process step is preferably a drying step using a drying fluid. Cases The following cases show the effect of the present invention to improve the wet processing of electronic components, such as the use of controlled gas levels to remove particles and use process liquids. In the following cases, particles were detected using electronic components from KLA Teneor's Teneor SP1 particle detection device. Case 1 Printed by the staff of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the co-operative society (please read the Precautions on the back page). The gas level of the SCI solution was changed to investigate the effect of gas on particle removal efficiency. When using sonic energy Sanjie Semiconductor Wafer. The CFM Full-Flow ™ system model 6100 provided by CFM Technologies is used in the following cases. The CFM wet processing equipment includes a container for holding 100 6 "semiconductor wafers, a deionized water replenishment system 'a storage tank for storing hydrogen peroxide solution and aqueous solution of hydrogen hydroxide, a LiQui-Cel® unit and fluid connection. Ionized water system 'and the sound used to generate sonic energy __________ 25 _ ^ _ This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm) A7 B7!: ------- V. Description of the invention G / p) Wave unit. The Liqui-Cd® unit includes two gas-liquid contactor elements in series. The container is completely filled with 6 ”diameter wafers, many of which have known levels of particulate contamination, such as by Determined by KLA particle detection device. The wafer was first contacted with 50 ° C deionized water and exchanged at a rate of 3 gpm and 8 gpm for 60 seconds. The deionized water leaving the container had a resistivity of 15 Mohm. After the goal was achieved, the 'washing was continued with a varying flow cycle for another 4 minutes. Before contacting the wafer, deionized rinse water was passed through the Liqui-Cel® unit group under the following conditions: Table 1: Contactor setting contactor vacuum (Hg) Nitrogen flushing 1 -18 9 2 -18 12.5 After the wafer was formed, the SCI solution was formed by injecting an appropriate volume of an aqueous solution of hydrogen peroxide (31% by weight of hydrogen peroxide) and an aqueous solution of ammonium hydroxide (28% by weight of ammonium hydroxide) were fixed in a storage tank to flow at a rate of 3 gpm The deionized water beam was used to form a SCI solution having a temperature of 50 ° C and a concentration ratio of 40: 3: 1 water: hydrogen peroxide: ammonium hydroxide. The gas of deionized water was adjusted to use this Liqui-Cel® unit, which was operated with the same parameters as in Table 1. The & C1 solution with a controlled gas level was directed to a container at a flow rate of 3 gpm to fill the solution for a fill time of 60 seconds. After filling the container, when the wafer is infiltrated with SCI solution for 5 minutes, the paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) _26 ____ A7 __.__ B7_____ V. Description of the invention (V <) One minute after the start of wetting, the SCI solution was exposed to sonic energy for 4 minutes and sonicated in the ultra-high sonic energy range. After infiltration, the SCI solution was replaced by deionized water, which was 5 gpm and 10 gpm. The cross-flow rate and the cross-temperatures of 50 ° C and 40 ° C were led to the container until the deionized water leaving the container had a resistivity of 2 hm. After the goal was achieved, the washing was continued in an interactive flow cycle. Another 3 minutes (each flow rate cycle is approximately 60 seconds). During decanting, the deionized water was passed through the Liqui-Cel® unit under the conditions shown in Table 1, and sonication was used for all 淸During the wash cycle in the ultra-high sonic energy range. After rinsing, the wafer was dried by the dry vapor of isopropanol, which was guided to the container at a pressure of 1.5 psig for 8 minutes. After drying The wafer was removed from the container. Many batches of wafers were processed in the manner described above, except that the vacuum level of the second contactor was adjusted to 0, -7, -12, -4, and -15 and a total of 5 turns. Change the gas level of deionized water, which is used to moisturize, rinse, and form an SCI solution. Two wafers from each batch are subsequently analyzed for particulate contaminants ranging in size from to 1.0em, using KLA particles Detection equipment. Particle removal efficiency (%) is calculated by dividing the number of particles removed from the initial particle number and multiplying by 100. The results are shown in Figure 1, which is the particle removal efficiency ( (Percentage) and the degree of vacuum depleted in the second contactor, which is based on mercury pressure. The results show that the particle removal efficiency for the SCI solution is significantly improved, when the vacuum pressure increases from -18 mercury pressure to Approx. 0 Hg pressure This paper size is applicable to Chinese National Standard (CNS) A4 specification (21〇 × 297 mm) ----------- install L — ί, (Please read the precautions on the back first (Page)-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs __27___ 394709

V. Description of the invention (* yW force. The SCI scrubbing protocol can be used in wet processing procedures' whose wet process steps use a low gas containing process liquid (eg, in an etching chemical treatment step). Although the present invention has been described with regard to particularly preferred implementation For example, it is obvious to those skilled in the art that many improvements and changes can be realized in these designs. + The description provided is for the purpose of illustration and is not intended to limit the invention. 28 This paper standard applies to the Chinese National Standard (CNS) ) M size (210 × 2.97 mm)

Claims (1)

A8 B8 C8 D8 8810282i Patent Application Scope 1. A method for wet processing of electronic components, including: a) placing electronic components with a surface in a reaction chamber; (please read the precautions on the back before this page) b ) Control the gas level in at least two process gases, of which at least two process liquids have different gas levels; and c) contact the electronic components with each process liquid for a contact time. 2. The method as described in item 1 of the patent application scope, wherein the electronic component is exposed to a high gas containing a process liquid in a wet process step and contacting a low gas contains a process liquid in another wet process step. / 3. The method according to item 1 of the scope of patent application, wherein the gas level of the process liquid is controlled based on the surface composition of the electronic component, the wet process step when the wet process step is completed or subsequently implemented, or a combined process . 4. The method according to item 1 of the scope of patent application, wherein the electronic component is in contact with a high gas containing a process liquid at the wet process step and the surface of the electronic component has a protective layer at the completion of the wet process step. 5. The method as described in item 4 of the scope of the patent application, wherein the high gas-containing process liquid includes gas in the reaction chamber to a value slightly below saturation, which is equal to saturation or greater than saturation. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 6. The method described in item 4 of the scope of patent application, in which the high gas contains a process liquid system cleaning solution. 7. The method according to item 6 of the scope of patent application, wherein the washing solution is an SCI solution or an SC2 solution. 8. The method as described in claim 4 of the scope of the patent application, wherein the high gas comprises a process liquid system scrubbing liquid. 9. The method as described in item 8 of the scope of patent application, wherein the size of the paper is applied to the Chinese National Standard (CNS) A4 (210 X 297 mm) 394709 A8 B8 C8 D8 Central Bureau of Standards, Ministry of Economic Affairs The employee's consumer cooperative prints and applies for patents. The range is deionized water. 10. The method as described in claim 4 of the scope of the patent application, wherein the high gas comprises a process solution system photoresist removal solution. 11. The method as described in claim 10, wherein the photoresist removal solution includes sulfuric acid. 12. The method according to item 4 of the scope of patent application, wherein the step of exposing the electronic component to the sonic energy for at least a part of the contact time, the electronic component is in contact with a high gas containing a process liquid. 13. The method as described in item 1 of the scope of patent application, wherein the electronic component is in contact with a low gas containing a process liquid in a wet process step, and the surface of the electronic component is substantially free of a protective layer when the wet process step is completed. 14. The method according to item 13 of the scope of patent application, wherein the low-gas process liquid of the reaction chamber includes gas saturated at a gas level below the process liquid and includes oxygen at a level less than 0.1% of the saturated oxygen level. Process liquid. 15. The method of claim 13 in the scope of the patent application, wherein the low gas comprises a process liquid system etching solution. 16. The method according to item 15 of the scope of patent application, wherein the etching solution includes hydrofluoric acid or buffered hydrochloric acid. 17. The method according to item 13 of the scope of patent application, wherein the low gas comprises a process liquid system washing liquid, which is directly next to an etching chemical treatment step. 18. The method as described in claim 17 of the scope of the patent application, wherein the rinsing solution system is deionized water. Read Jt Read Back I Binding _ The size of the paper is applicable to the Chinese National Standard (CNS) A4 (210X 297 mm) 304709? 88 D8 6. Application for patent scope 19. The method described in item 1 of the patent scope, where The electronic component is exposed to a high gas containing process liquid in a wet process step and the high gas containing process liquid includes hydrofluoric acid, ammonium hydroxide or an aqueous solution including the same buffer solution, a mixture of hydrogen peroxide, sulfuric acid, sulfuric acid and ozone, chromium Acid, phosphoric acid, selenic acid or the same buffer, nitric acid or combination solution. 20. The method according to item 17 of the scope of patent application, wherein the step of exposing the electronic component to the sonic energy for at least a part of the contact time, the electronic component is in contact with at least one of the process liquids. --------- Installation-r · s ^ ly. (Please read the precautions on the back before ^! ?? This page) Thread-Print this paper size by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Applicable to China National Standard (CNS) A4 specification (210X297 mm)