JPH11138113A - Method of removing fine particles - Google Patents
Method of removing fine particlesInfo
- Publication number
- JPH11138113A JPH11138113A JP30461697A JP30461697A JPH11138113A JP H11138113 A JPH11138113 A JP H11138113A JP 30461697 A JP30461697 A JP 30461697A JP 30461697 A JP30461697 A JP 30461697A JP H11138113 A JPH11138113 A JP H11138113A
- Authority
- JP
- Japan
- Prior art keywords
- water
- fine particles
- cleaning
- washed
- reducing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Treatment Of Water By Oxidation Or Reduction (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、微粒子の除去方法
に関する。さらに詳しくは、本発明は、半導体や液晶な
どの電子材料を扱う産業などにおいて、被洗浄物の表面
に付着した汚染微粒子を効果的に除去することができる
微粒子の除去方法に関する。[0001] The present invention relates to a method for removing fine particles. More specifically, the present invention relates to a method for removing fine particles capable of effectively removing contaminating fine particles adhered to the surface of an object to be cleaned in industries handling electronic materials such as semiconductors and liquid crystals.
【０００２】[0002]
【従来の技術】従来より、半導体用シリコン基板、液晶
用ガラス基板などの電子材料は、ＲＣＡ洗浄と呼ばれ
る、硫酸と過酸化水素水の混合液、塩酸と過酸化水素水
と水の混合液、アンモニア水と過酸化水素水と水の混合
液など、過酸化水素をベースとする濃厚薬液を用いた高
温洗浄により清浄化されていた。この洗浄法を採用した
場合の多大な薬液コスト、リンス用の超純水コスト、廃
液処理コスト、薬品蒸気を排気し新たに清浄空気を作る
空調コストを低減し、さらに水の大量使用、薬物の大量
廃棄、排ガスの放出といった環境への負荷低減のため
に、近年ウェット洗浄工程の見直しが進められている。
本発明者らは、先に、薬液や水によるウェット洗浄工程
で除去すべき不純物のうち、特に電子製品性能への影響
が大きく、問題視されている微粒子の除去に関し、低濃
度の薬品又は薬品無添加で、しかも室温で高い洗浄効果
を得ることができる水素添加超純水を洗浄水とする洗浄
方法を開発した。この洗浄水は、使用する薬剤の量が少
なく、容易に製造することができ、微粒子で汚染された
電子材料などの表面を高い洗浄効率で洗浄して微粒子を
除去することができるが、装置上の問題などにより、高
純度の水素ガスを超純水に溶解して使用できない場合が
あることから、水素添加超純水による洗浄と同様の洗浄
効果が簡単に得られる微粒子の除去方法が求められるよ
うになった。また、高価な電子材料表面の精密洗浄に限
らず、もっと簡易な部材洗浄の分野においても、低コス
トで特別な設備を必要とせず、しかも効果の大きい微粒
子の除去方法が求められている。2. Description of the Related Art Conventionally, electronic materials such as a silicon substrate for a semiconductor and a glass substrate for a liquid crystal have been known as RCA cleaning, a mixture of sulfuric acid and hydrogen peroxide, a mixture of hydrochloric acid, hydrogen peroxide and water, It has been cleaned by high-temperature cleaning using a concentrated chemical based on hydrogen peroxide, such as a mixture of ammonia water, hydrogen peroxide water and water. If this cleaning method is adopted, the cost of chemicals, the cost of ultrapure water for rinsing, the cost of waste liquid treatment, and the cost of air conditioning that exhausts chemical vapors and creates clean air will be reduced. In order to reduce the burden on the environment such as mass disposal and emission of exhaust gas, the wet cleaning process has recently been reviewed.
The present inventors have found that among impurities to be removed in the wet cleaning step using a chemical solution or water, particularly, the removal of fine particles, which have a great effect on the performance of electronic products and are regarded as problematic, has a low concentration of chemicals or chemicals. We have developed a cleaning method using hydrogenated ultrapure water as a cleaning water, which can provide a high cleaning effect at room temperature without addition. This washing water uses a small amount of chemicals, can be easily manufactured, and can remove fine particles by cleaning the surface of electronic materials and the like contaminated with fine particles with high cleaning efficiency. In some cases, high purity hydrogen gas cannot be dissolved and used in ultrapure water due to the problems described above, so there is a need for a method for removing fine particles that can easily obtain the same cleaning effect as cleaning with hydrogenated ultrapure water. It became so. Further, not only in the precision cleaning of expensive electronic material surfaces but also in the field of simpler member cleaning, there is a demand for a method for removing fine particles which does not require special equipment at low cost and is highly effective.
【０００３】[0003]
【発明が解決しようとする課題】本発明は、半導体や液
晶などの電子材料を扱う産業などにおいて、被洗浄物の
表面に付着した汚染微粒子を効果的に除去することがで
きる微粒子の除去方法を提供することを目的としてなさ
れたものである。SUMMARY OF THE INVENTION The present invention relates to a method for removing fine particles which can effectively remove contaminating fine particles adhering to the surface of an object to be cleaned in industries dealing with electronic materials such as semiconductors and liquid crystals. It was made for the purpose of providing.
【０００４】[0004]
【課題を解決するための手段】本発明者らは、上記の課
題を解決すべく、先に開発した水素添加超純水による電
子材料表面の洗浄効果を手がかりに鋭意研究を重ねた結
果、水素を添加することの効果は、溶媒すなわち超純水
の酸化還元電位を低下させ、負で絶対値の大きい性状の
ものにする点にあることを見いだし、さらに、還元性の
気体である水素ガスの代わりに、従来から広く使われて
いる還元性の薬剤を溶解して酸化還元電位を低下させた
洗浄水を用いることによっても、水素添加超純水と同様
の高い微粒子除去が実現できることを見いだして、この
知見に基づいて本発明を完成するに至った。すなわち、
本発明は、（１）水に還元性薬剤を添加してなる還元性
水を、被洗浄物と接触させて、被洗浄物表面から微粒子
を除去することを特徴とする微粒子の除去方法、を提供
するものである。さらに、本発明の好ましい態様とし
て、（２）還元性水の酸化還元電位が、標準水素電極に
対して−１００ｍＶ以下である第(１)項記載の微粒子の
除去方法、（３）還元性水が、還元性薬剤を超純水に添
加してなるものである第(１)項記載の微粒子の除去方
法、（４）被洗浄物が、電子材料である第(１)項記載の
微粒子の除去方法、（５）電子材料が、半導体用シリコ
ン基板又は液晶用ガラス基板である第(４)項記載の微粒
子の除去方法、（６）還元性薬剤が、次亜硫酸塩、亜硫
酸塩、亜硫酸水素塩、亜硝酸塩、ヒドラジン、硫化水素
又はアルデヒドである第(１)項記載の微粒子の除去方
法、（７）還元性薬剤が、ナトリウム塩である第(６)項
記載の微粒子の除去方法、（８）還元性水が、アルカリ
性薬品及び／又は界面活性剤を含有する第(１)項記載の
微粒子の除去方法、（９）還元性水と被洗浄物の接触の
際に、還元性水に超音波を伝達する第(１)項記載の微粒
子の除去方法、（１０）超音波の周波数が、４００kHz
以上である第(９)項記載の微粒子の除去方法、を挙げる
ことができる。Means for Solving the Problems In order to solve the above-mentioned problems, the present inventors have conducted intensive studies based on the effect of cleaning the surface of electronic materials with hydrogenated ultrapure water developed earlier, and as a result, have found that hydrogen The effect of the addition of is to reduce the oxidation-reduction potential of the solvent, that is, ultrapure water, to make it negative and have a large absolute value. Instead, it has been found that the same high removal of fine particles as hydrogenated ultrapure water can be achieved by using washing water with a redox potential lowered by dissolving a widely used reducing agent. The present invention has been completed based on this finding. That is,
The present invention provides (1) a method for removing fine particles, which comprises contacting reducing water obtained by adding a reducing agent to water with an object to be cleaned to remove fine particles from the surface of the object to be cleaned. To provide. Further, as a preferred embodiment of the present invention, (2) the method for removing fine particles according to (1), wherein the oxidation-reduction potential of the reducing water is −100 mV or less with respect to a standard hydrogen electrode, (3) the reducing water Wherein the reducing agent is added to ultrapure water. (4) The method for removing fine particles according to (1), wherein the object to be cleaned is an electronic material. (5) The method for removing fine particles according to (4), wherein the electronic material is a silicon substrate for semiconductor or a glass substrate for liquid crystal, and (6) the reducing agent is hyposulfite, sulfite, hydrogen sulfite. (7) The method for removing fine particles according to (1), which is a salt, nitrite, hydrazine, hydrogen sulfide or aldehyde, (7) the method for removing fine particles according to (6), wherein the reducing agent is a sodium salt, 8) The first (1) in which the reducing water contains an alkaline chemical and / or a surfactant. (9) The method for removing fine particles according to (1), wherein ultrasonic waves are transmitted to the reducing water when the reducing water and the object to be cleaned come into contact with each other, (10) the method for removing ultrasonic particles. Frequency is 400kHz
The method for removing fine particles according to the above item (9) can be exemplified.
【０００５】[0005]
【発明の実施の形態】本発明の微粒子の除去方法におい
ては、水に還元性薬剤を添加してなる還元性水を被洗浄
物と接触させて、被洗浄物表面から微粒子を除去する。
本発明において、還元性薬剤を添加する水の純度には特
に制限はなく、被洗浄物に要求される表面清浄度に応じ
て選択することができる。すなわち、被洗浄物の表面清
浄度の要求レベルに比して、実質的に汚染されていない
純度を有する水に、還元性薬剤を添加して還元性水を調
製し、この還元性水を被洗浄物と接触させて、被洗浄物
表面から微粒子を除去することができる。したがって、
被洗浄物が特に厳密な清浄度を必要としない簡易な部材
などである場合には、工業用の還元性薬剤を水道水など
に添加溶解した洗浄水を用いることができる。しかし、
半導体用シリコン基板、液晶用ガラス基板、精密電子部
品などの電子材料の表面を洗浄する場合には、十分な高
純度を有する超純水に高純度の還元性薬剤を添加して洗
浄水を調製することが好ましい。さらに、必要に応じ
て、洗浄水中の極微細な異物をフィルターにより除去す
ることもできる。BEST MODE FOR CARRYING OUT THE INVENTION In the method for removing fine particles of the present invention, reducing water obtained by adding a reducing agent to water is brought into contact with an object to be cleaned to remove fine particles from the surface of the object to be cleaned.
In the present invention, the purity of the water to which the reducing agent is added is not particularly limited, and can be selected according to the surface cleanliness required for the object to be cleaned. That is, reducing water is prepared by adding a reducing agent to water having a purity substantially free of contamination compared to the required level of surface cleanliness of the object to be cleaned, and this reducing water is coated. The fine particles can be removed from the surface of the object to be cleaned by contact with the object to be cleaned. Therefore,
When the object to be cleaned is a simple member that does not particularly require strict cleanliness, cleaning water obtained by adding and dissolving an industrial reducing agent to tap water or the like can be used. But,
When cleaning the surface of electronic materials, such as silicon substrates for semiconductors, glass substrates for liquid crystals, and precision electronic components, clean water is prepared by adding a high-purity reducing agent to ultra-pure water of sufficiently high purity. Is preferred. Further, if necessary, extremely fine foreign substances in the washing water can be removed by a filter.
【０００６】本発明に使用する還元性薬剤には特に制限
はなく、例えば、次亜硫酸ナトリウム（Ｎａ2Ｓ
2Ｏ4）、次亜硫酸アンモニウムなどの次亜硫酸塩、亜硫
酸ナトリウム（Ｎａ2ＳＯ3）、亜硫酸アンモニウムなど
の亜硫酸塩、亜硫酸水素ナトリウム（ＮａＨＳＯ3）、
亜硫酸水素アンモニウムなどの亜硫酸水素塩、亜硝酸ナ
トリウム（ＮａＮＯ2）、亜硝酸アンモニウムなどの亜
硝酸塩、ヒドラジン、硫化水素、アルデヒドなどを挙げ
ることができる。添加する還元性薬剤は高濃度であるほ
ど洗浄水の還元性が強くなり、被洗浄物表面からの微粒
子除去効果を高めることができるが、薬剤に要するコス
トや洗浄工程後の超純水などによるリンス工程への負荷
低減、ひいてはリンス用水量低減や工程時間の短縮のた
めには、必要最小限の還元性薬剤を用いることが好まし
い。本発明においては、洗浄に用いる還元性水の酸化還
元電位が、標準水素電極に対して−１００ｍＶ以下であ
ることが好ましく、−３００ｍＶ以下であることがより
好ましく、−４００ｍＶ以下であることがさらに好まし
い。還元性水の酸化還元電位が−１００ｍＶを超える
と、微粒子の除去効果が不足するおそれがある。本発明
においては、水に還元性薬剤を添加してなる還元性水
に、さらに他の薬剤を添加することができる。他の薬剤
としては、例えば、pHを高め、同時に酸化還元電位を低
下させる効果を有するアンモニアなどのアルカリ性試薬
や、界面活性剤などを挙げることができる。また、水に
還元性薬剤を添加してなる還元性水に、さらに水素ガス
を併せて溶解することもできる。The reducing agent used in the present invention is not particularly limited. For example, sodium hyposulfite (Na 2 S)
2 O 4 ), hyposulfites such as ammonium hyposulfite, sodium sulfite (Na 2 SO 3 ), sulfites such as ammonium sulfite, sodium bisulfite (NaHSO 3 ),
Examples thereof include bisulfites such as ammonium bisulfite, sodium nitrite (NaNO 2 ), nitrites such as ammonium nitrite, hydrazine, hydrogen sulfide, and aldehyde. The higher the concentration of the reducing agent to be added, the higher the reducibility of the washing water and the higher the effect of removing fine particles from the surface of the object to be washed, but the cost required for the agent and the ultrapure water after the washing step, etc. In order to reduce the load on the rinsing step, and further reduce the amount of rinsing water and the time required for the step, it is preferable to use the minimum necessary reducing agent. In the present invention, the oxidation-reduction potential of the reducing water used for washing is preferably -100 mV or less, more preferably -300 mV or less, and more preferably -400 mV or less with respect to the standard hydrogen electrode. preferable. If the redox potential of the reducing water exceeds -100 mV, the effect of removing fine particles may be insufficient. In the present invention, another agent can be further added to reducing water obtained by adding a reducing agent to water. Other agents include, for example, alkaline reagents such as ammonia, which have the effect of increasing the pH and simultaneously lowering the oxidation-reduction potential, and surfactants. In addition, hydrogen gas can be further dissolved in reducing water obtained by adding a reducing agent to water.
【０００７】本発明方法においては、還元性水と被洗浄
物の接触に際して、超音波などの物理的な作用を併用す
ることができる。被洗浄物と接触する還元性水に超音波
を伝達することにより、被洗浄物表面からの微粒子の脱
離効果を高めることができる。電子材料などの極めて微
細な加工を施し、かつ清浄な表面が求められる分野にお
いて、超音波を伝達する場合には、その周波数は４００
kHz以上であることが好ましく、1MHz以上であることが
より好ましい。超音波の周波数が、従来用いられている
数十kHz程度であると、超音波がもたらすキャビテーシ
ョン効果により、被洗浄物に損傷を与えるおそれがあ
る。本発明方法において、還元性水と被洗浄物を接触さ
せる方法には特に制限はなく、例えば、還元性水を満た
した洗浄用水槽に被洗浄物を浸漬し、還元性水と被洗浄
物を所定時間接触させ、必要に応じて超音波を伝達する
バッチ式洗浄を行うことができ、あるいは、被洗浄物を
スピンナーや移動架台上に載せ、必要に応じて還元性水
に超音波を伝達し、還元性水を被洗浄物の表面に注いで
処理する枚葉式洗浄を行うこともできる。In the method of the present invention, a physical action such as ultrasonic waves can be used at the time of contact between the reducing water and the object to be cleaned. By transmitting the ultrasonic waves to the reducing water that comes into contact with the object to be cleaned, the effect of desorbing the fine particles from the surface of the object to be cleaned can be enhanced. In a field where very fine processing such as an electronic material is performed and a clean surface is required, when transmitting ultrasonic waves, the frequency is 400
It is preferably at least kHz, more preferably at least 1 MHz. If the frequency of the ultrasonic wave is about several tens of kHz conventionally used, there is a possibility that the object to be cleaned may be damaged due to the cavitation effect caused by the ultrasonic wave. In the method of the present invention, there is no particular limitation on the method of bringing the reducing water into contact with the object to be cleaned.For example, the object to be cleaned is immersed in a cleaning water tank filled with reducing water, and the reducing water and the object to be cleaned are washed. Batch-type cleaning can be performed by contacting for a predetermined time and transmitting ultrasonic waves as necessary, or the object to be cleaned can be placed on a spinner or a movable gantry, and ultrasonic waves can be transmitted to reducing water as necessary. Alternatively, single-wafer cleaning in which reducing water is poured onto the surface of the object to be cleaned for treatment may be performed.
【０００８】本発明方法によれば、微粒子で汚染された
被洗浄物の洗浄に使用する薬品の量を減少し、かつ高い
洗浄効果を得ることができ、さらに、洗浄後の廃液処理
が容易になる。すなわち、従来のＲＣＡ洗浄法などの洗
浄廃液は、アンモニアや過酸化水素を大量に含んだ高濃
度の状態で排出されるため、中和処理や分解処理が必要
であり、廃液処理においても洗浄液の調製に使用したの
と同程度の量の薬品が必要であったのに対し、本発明方
法においては、少量の還元性薬剤を使用するのみである
ので、薬剤コストを大幅に節減することができる。本発
明方法によれば、水に還元性薬剤を添加して調製した還
元性水を被洗浄物と接触させることにより、本発明者ら
が先に開発した水素添加超純水を用いる洗浄と同様の洗
浄効果が得られ、被洗浄物表面に付着した微粒子を容易
に除去することができる。このため、超純水に水素を溶
解するための溶解膜装置などの特殊な設備を設置するこ
となく、簡便に被洗浄物表面の微粒子を除去することが
できる。According to the method of the present invention, the amount of chemicals used for cleaning an object to be cleaned contaminated with fine particles can be reduced, a high cleaning effect can be obtained, and waste liquid treatment after cleaning can be easily performed. Become. That is, since the cleaning waste liquid such as the conventional RCA cleaning method is discharged in a high-concentration state containing a large amount of ammonia and hydrogen peroxide, a neutralization treatment or a decomposition treatment is required. While the same amount of drug as that used in the preparation was required, in the method of the present invention, only a small amount of reducing drug was used, so that drug cost can be greatly reduced. . According to the method of the present invention, by contacting the reduced water prepared by adding a reducing agent to water with the object to be cleaned, the same as the cleaning using hydrogenated ultrapure water developed earlier by the present inventors. And the fine particles attached to the surface of the object to be cleaned can be easily removed. Therefore, fine particles on the surface of the object to be cleaned can be easily removed without installing special equipment such as a dissolving film device for dissolving hydrogen in ultrapure water.
【０００９】[0009]
【実施例】以下に、実施例を挙げて本発明をさらに詳細
に説明するが、本発明はこれらの実施例によりなんら限
定されるものではない。実施例及び比較例において、微
粒子の除去効果は下記の方法により評価した。 （１）被洗浄物 酸化処理後の６インチシリコン基板を、粒径１μｍ以下
のアルミナ微粒子で汚染し、被洗浄物として用いた。洗
浄前の付着微粒子数は、基板１枚当たり約２０,０００
個である。 （２）洗浄操作 １.６MHzの超音波発振器を内蔵したノズルから、超音波
の伝達を受けた洗浄水を基板上に噴出する、枚葉式スピ
ン洗浄装置を用いた。基板の回転速度は５００rpmであ
り、洗浄時間は１分間である。洗浄後１０秒間超純水で
リンスし、回転速度を１,５００rpmに上げて２０秒間保
持し、乾燥した。 （３）評価 レーザー散乱方式による基板上異物検査装置で微粒子を
計測し、洗浄前後の微粒子数から微粒子除去率を求め
た。 実施例１ 次亜硫酸ナトリウムを０.２５重量％溶解した還元性水
を洗浄水として用い、洗浄試験を行った。微粒子除去率
は、９４％であった。なお、使用した洗浄水の標準酸化
還元電位は、−４３０ｍＶであった。 比較例１ 薬剤を添加しない超純水を洗浄水として用い、洗浄試験
を行った。微粒子除去率は、５５％であった。なお、使
用した洗浄水の標準酸化還元電位は、４００ｍＶであっ
た。 比較例２ 水素を０.５ppm溶解した超純水を洗浄水として用い、洗
浄試験を行った。微粒子除去率は、７２％であった。な
お、使用した洗浄水の標準酸化還元電位は、−４００ｍ
Ｖであった。 比較例３ 水素を１.２ppm溶解した超純水を洗浄水として用い、洗
浄試験を行った。微粒子除去率は、９５％であった。な
お、使用した洗浄水の標準酸化還元電位は、−４５０ｍ
Ｖであった。実施例１及び比較例１〜３の結果を、第１
表に示す。EXAMPLES The present invention will be described in more detail with reference to the following Examples, which should not be construed as limiting the present invention. In Examples and Comparative Examples, the effect of removing fine particles was evaluated by the following method. (1) Cleaning Object The 6-inch silicon substrate after the oxidation treatment was contaminated with alumina fine particles having a particle diameter of 1 μm or less and used as a cleaning object. The number of attached fine particles before cleaning is about 20,000 per substrate
Individual. (2) Cleaning Operation A single-wafer spin cleaning apparatus was used, in which cleaning water to which ultrasonic waves had been transmitted was jetted onto a substrate from a nozzle having a built-in 1.6 MHz ultrasonic oscillator. The rotation speed of the substrate is 500 rpm, and the cleaning time is 1 minute. After the washing, the substrate was rinsed with ultrapure water for 10 seconds, the rotation speed was increased to 1,500 rpm, the temperature was held for 20 seconds, and the substrate was dried. (3) Evaluation Fine particles were measured by a foreign substance inspection device on a substrate by a laser scattering method, and the fine particle removal rate was determined from the number of fine particles before and after cleaning. Example 1 A washing test was performed using reducing water in which 0.25% by weight of sodium hyposulfite was dissolved as washing water. The fine particle removal rate was 94%. The standard oxidation-reduction potential of the used washing water was -430 mV. Comparative Example 1 A cleaning test was performed using ultrapure water to which no chemical was added as cleaning water. The fine particle removal rate was 55%. The standard oxidation-reduction potential of the used washing water was 400 mV. Comparative Example 2 A cleaning test was performed using ultrapure water in which 0.5 ppm of hydrogen was dissolved as cleaning water. The fine particle removal rate was 72%. The standard oxidation-reduction potential of the used washing water was -400 m
V. Comparative Example 3 A cleaning test was performed using ultrapure water in which 1.2 ppm of hydrogen was dissolved as cleaning water. The fine particle removal rate was 95%. The standard oxidation-reduction potential of the washing water used was -450 m
V. The results of Example 1 and Comparative Examples 1 to 3
It is shown in the table.
【００１０】[0010]
【表１】 [Table 1]
【００１１】第１表の結果から、次亜硫酸ナトリウム
０.２５重量％を溶解した還元性水を洗浄水として用い
た実施例１の洗浄により、ほぼ同じ酸化還元電位を有す
る水素１.２ppmを溶解した超純水を洗浄水として用いた
比較例３の洗浄とほぼ同等の、極めて高い微粒子除去効
果が得られることが確認された。From the results shown in Table 1, it was found that the cleaning in Example 1 using reducing water in which 0.25% by weight of sodium hyposulfite was dissolved as the washing water dissolved 1.2 ppm of hydrogen having substantially the same oxidation-reduction potential. It was confirmed that an extremely high effect of removing fine particles was obtained, which was almost the same as the cleaning of Comparative Example 3 using the purified ultrapure water as the cleaning water.
【００１２】[0012]
【発明の効果】本発明方法によれば、水に還元性薬剤を
添加溶解した還元性水を洗浄水として用いて、本発明者
らが先に開発した水素添加超純水を用いる洗浄と同様
に、被洗浄物表面から汚染微粒子を極めて効果的に除去
することができる。還元性薬剤を水に溶解するだけで洗
浄水を調製することができるので、水素ガスとそれを扱
う機材、溶解ユニットなどを用いることなしに、簡便か
つ効果的に汚染微粒子の除去を行うことができる。According to the method of the present invention, reducing water obtained by adding and dissolving a reducing agent to water is used as cleaning water, and the cleaning is performed in the same manner as the cleaning using hydrogenated ultrapure water developed earlier by the present inventors. In addition, contaminant fine particles can be very effectively removed from the surface of the object to be cleaned. Cleaning water can be prepared simply by dissolving the reducing agent in water, so contaminant fine particles can be easily and effectively removed without using hydrogen gas and equipment and dissolving units that handle it. it can.
Claims (1)
を、被洗浄物と接触させて、被洗浄物表面から微粒子を
除去することを特徴とする微粒子の除去方法。1. A method for removing fine particles, comprising contacting reducing water obtained by adding a reducing agent to water with an object to be cleaned to remove fine particles from the surface of the object to be cleaned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30461697A JPH11138113A (en) | 1997-11-06 | 1997-11-06 | Method of removing fine particles |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30461697A JPH11138113A (en) | 1997-11-06 | 1997-11-06 | Method of removing fine particles |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11138113A true JPH11138113A (en) | 1999-05-25 |
Family
ID=17935170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30461697A Pending JPH11138113A (en) | 1997-11-06 | 1997-11-06 | Method of removing fine particles |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11138113A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001097268A1 (en) * | 2000-06-16 | 2001-12-20 | Kao Corporation | Detergent composition |
| JP2002069495A (en) * | 2000-06-16 | 2002-03-08 | Kao Corp | Detergent composition |
| JP2012174794A (en) * | 2011-02-18 | 2012-09-10 | Fujitsu Ltd | Cooler and usage method of cooler |
| JP2013197478A (en) * | 2012-03-22 | 2013-09-30 | Hoya Corp | Method for manufacturing glass substrate, method for manufacturing mask blank, method for manufacturing transfer mask, method for manufacturing substrate with multilayer reflection film, method for manufacturing reflective mask blank, and method for manufacturing reflective mask |
-
1997
- 1997-11-06 JP JP30461697A patent/JPH11138113A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001097268A1 (en) * | 2000-06-16 | 2001-12-20 | Kao Corporation | Detergent composition |
| JP2002069495A (en) * | 2000-06-16 | 2002-03-08 | Kao Corp | Detergent composition |
| US7396806B2 (en) | 2000-06-16 | 2008-07-08 | Kao Corporation | Semiconductor cleaner comprising a reducing agent, dispersant, and phosphonic acid-based chelant |
| KR100867287B1 (en) * | 2000-06-16 | 2008-11-06 | 카오카부시키가이샤 | Detergent composition |
| JP2012174794A (en) * | 2011-02-18 | 2012-09-10 | Fujitsu Ltd | Cooler and usage method of cooler |
| JP2013197478A (en) * | 2012-03-22 | 2013-09-30 | Hoya Corp | Method for manufacturing glass substrate, method for manufacturing mask blank, method for manufacturing transfer mask, method for manufacturing substrate with multilayer reflection film, method for manufacturing reflective mask blank, and method for manufacturing reflective mask |
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