TW393684B - Construction of a film on a semiconductor wafer - Google Patents

Abstract

The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a RF signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The RF signal means is coupled to the showerhead and the wafer support for providing a first RF signal to the showerhead and a second RF signal to the wafer support.

Description

A7 B7 Printed by the Central Bureau of Standards, Ministry of Economic Affairs and Consumer Cooperatives. V. Description of the Invention (1) Contrast of related applications. This application is part of the following US patent applications. Continued applications: US Patent Application No. 08 / 339,521, the invention name is "improved titanium nitride film deposited by chemical vapor deposition method and method for manufacturing the same" and the application is November 14, 1994; US Patent Application No. 08 / No. 498,990, the invention name is "Bias Plasma Plasma of Film" and the application is July 6, 1995; U.S. Patent Application No. 08 / 567,461, the invention name is "Plasma Plasma of Film" and application The date is December 5, 1995; US Patent Application No. 08 / 677,185, the invention name is "Operation Room for Constructing Oxide Films on Semiconductor Wafers" and the application is July 9, 1996; US Patent Application No. 08 / 677,218, the invention name is "In-Situ Construction of Oxide Films on Semiconductor Wafers" and the filing date is July 9, 1996; and U.S. Patent Application No. 08 / 680,913, the invention name is "Bombing of Thin Film And the application date is 1996 7 12 said "each of the above patents are incorporated herein by reference. Inventions of the Invention A. Inventive Jaw Field The present invention relates to the field of manufacturing integrated circuits. J3_ • Description of related techniques When manufacturing integrated circuits, the method used to deposit thin films of insulating and conductive materials on wafers is the deposition method. The deposition can be printed by many people (please read the precautions on the back before writing this page), ^ 1

A 7 ---—__ ___B7___ V. Description of the invention (2) Performed by the same known methods, such as chemical vapor deposition ("CVD") and physical vapor deposition ("PVD" or "money recorded in CVD") In the method, the wafer is loaded into a chemical vapor deposition chamber. The traditional CVD method is to supply a reaction gas to the surface of the wafer and perform a thermally-induced chemical reaction there to form a thin film layer on the wafer surface to be processed. A special application of CVD is to deposit a titanium-containing compound, such as ^ titanium, on a wafer from a reactive 'fluoride containing a metal organic compound. One such compound is tetrakis (dialkyl) having the following structural formula Amine) Titanium (Ti (NR2) 4): RR \ / RNR (Please read the notes on the back before filling in this page) N — Ti — N: / i \ RNR / \ RR where R appears independently each time it appears It is, for example, an alkyl group of 5 carbon atoms. For example, tetra (dimethylamino) titanium (TDMAT) is generally used, and its chemical formula is Ti (N (CH3) 2) 4. Carrier gas, such as helium, argon , Nitrogen, or hydrogen, which carry the compound to the reaction chamber 'so energy diffusion can be used. In the example of thermal CVD, It can be generated by a heating source, or in the case of plasma-assisted cVD, energy can be generated by a radio frequency ("rf") signal source. The energetic chemical vapor reacts with the wafer surface to form a thin film of material on the wafer. When tdmat chemical vapor is used, the system is to deposit a titanium nitride film on the wafer. In the cheap method, the wafer system is placed in a physical vapor deposition ("PVD") processing chamber and the processing chamber is filled with a gas, such as Argon. By adopting the Chinese national standard (CNS> A4 size (210X297 mm) on this paper scale) Du Yin 袈 A7 --- ~~~ ____ B7_ 3 ^ '--- An electric field is generated during the reaction, and the gas containing positively charged ions is generated by the gas. 1 The positively charged ions accelerate and collide with the target material installed in the processing chamber. Atoms are deposited on the wafer to form a target material layer on the wafer surface. In the conventional sputtering method, the bombardment of the target material by positively charged ions can be enhanced by providing a negative electrical bias to the target material, which Can be countered The electrode of the target material provides radio frequency to achieve separation. The rf signal can be inductively coupled to the reaction to generate positively charged ions in the high-density plasma PVD processing chamber. The high-density plasma PVD chamber can contain another coupling to the crystal. The "signal of the circular support to improve the attractiveness of the target material to the wafer. Deposition processing chambers, such as CVD processing chambers or PVD processing chambers, can be used to deposit diffusion barriers in integrated circuits. Diffusion barriers suppress contact windows The metal diffuses into the active area of the semiconducting layer device built on the silicon substrate, which prevents the interactive diffusion of contact window metals, such as aluminum and copper, into the substrate. Unlike the insulating layer of the material, the diffusion barrier layer forms a conductive path through which current can flow. For example, a diffusion barrier layer can be applied to cover a silicon substrate located in a contact hole. When the integrated circuit is heated to more than 450 ° C, intense internal diffusion between the contact window metal and the silicon substrate can begin. If internal diffusion is allowed, the contact metal penetrates into the silicon substrate. This can cause open contact points in the integrated circuit and make the integrated circuit defective. In the manufacture of integrated circuits, the metallization process operation using aluminum and copper at high temperatures exceeding 45 ° C has been increased. Therefore, it is necessary to have a diffusion layer ^ paper size using China National Standard (CNS) A4 specifications ( 210X 297 mm) --------- (install-(please read the note on the back before writing this page 4) order--6-A7 B7 Shellfish consumer cooperation of the Central Standards Bureau of the Ministry of Economic Affairs 衽Printing 5. Description of the invention (4) 'The diffusion layer has a large ability to suppress the diffusion of the contact window metal, such as aluminum and copper. Traditionally,' the diffusion layer has been thickened to meet the aforementioned requirements. However, Smaller geometries have been used in the fabrication of integrated circuits. Smaller geometries reduce the size of the contact holes', thereby making the diffusion layer ideally thinner and more conformal. Figure 1 illustrates the silicon substrate. A diffusion barrier layer 1000 contact hole 103 is formed between the conductive region 105 of the 101 and the contact window plug 102. In an insulating layer of a material 104 such as silicon dioxide, the insulating layer covers the base Material 101. The diffusion barrier layer 100 is desirably formed so that the barrier layer is thin and substantially conforms to the interface. The contour of the surface of the hole 103. If the diffusion barrier layer 100 is thin and highly conformal, the contact window metal 102 can sufficiently form a conductive resistive contact with the conductive region 105 of the silicon substrate. As shown in FIG. The diffusion layer 100 is too thick or inferiorly formed, which prevents the contact window metal 102 from forming a sufficiently conductive and resistive contact with the substrate region 105. In the second figure, the inferiorly formed diffusion barrier layer 1 is formed. 〇The opening of the contact hole 103 is severely reduced. The narrow opening leads to the formation of the contact window metal 102, so that the contact window metal cannot reach the bottom of the contact hole 103. As a result, a hole 106 is formed. In order to ensure the contact window metal 102 and The good resistive contact between the substrate regions 105 'ideally minimizes the resistance of the diffusion barrier layer 100.' Generally 'acceptable resistivity values are 1,000 or less. Successfully The material used as the diffusion barrier layer is titanium nitride (TiN). --------- 1 Packing-(Please read the precautions on the back before writing this page). Chinese National Standard (CNS) M Specification (21〇297297-7 DESCRIPTION OF THE INVENTION (5) A7 B7 (in the M deposition ㈣), for example, using tdmat to provide a unstable barrier layer with high resistivity. In the example of _Ατ, the unstable barrier layer is due in part to significant The proportion of the barrier layer is composed of barriers (smoke, carbides, etc.). Furthermore, titanium, a chemically active metal, may not fully react in the film. Ideally, this is treated by post-deposition treatment. This kind of barrier material layer can reduce and stabilize the resistivity of this layer. The printed materials produced by the Shellfish Consumer Cooperative of the Central Office of the Ministry of Economic Affairs are ideally tied in the same processing room ("in-situ" ) Carry out successive steps of the manufacturing method, such as deposition and sedimentation post-treatment. In-situ operation reduces the amount of contaminants exposed to a wafer by reducing the number of times the wafer needs to be transferred between different parts of the manufacturing equipment. In-situ operation has also led to a reduction in the number of components of integrated circuit manufacturers that must be installed and maintained. Therefore, there is a need to construct a high-conformity thin diffusion film 'having an improved ability to suppress a contact window, such as a contact metal such as titanium or copper. Furthermore, the diffusion film is ideally used as a diffusion barrier layer having a resistance for forming a good current path through the material diffusion transfer layer. It is also necessary to be able to construct such a diffusion barrier in situ. SUMMARY OF THE INVENTION According to the present invention, there is provided a device having an in-situ L of two conformal diffusion barrier layers with improved resistivity. By implementing aspects of the present invention, the ability of the diffusion layer to impede the diffusion of the contact window metal can be enhanced, The contact window metal is, for example, a chain or copper. The enhancement effect of such a diffusion barrier layer will not significantly increase its thickness or resistivity beyond the acceptable limit. I. Installation-(Please read the precautions on the back before writing ^-this page)

， 1T II HI I- ti · This paper standard is suitable for financial and family standards (CNS) 8 4 · (21 () > < 297 Gong | the 8- printed by the Ministry of Economic Affairs and the Central Bureau of Quasi Bureau Shellfish Consumer Cooperative B7____ 5. Description of the invention (6) A semiconductor processing device that can be used to implement the embodiment of the present invention may include a processing chamber, a spray head, a wafer support, and an RF signal device. In one embodiment of the present invention, the semiconductor crystal The round processing device can perform chemical vapor deposition. The spray head is provided in the processing chamber to supply gas. The wafer support is provided in the processing chamber to support the wafer. The RF signal device can be used with the spray head and the wafer support. The two are light to provide the first rf signal to the spray head and the second rf signal to the wafer carrier. In addition, the rf signal device can only be coupled to provide the rf1fL number to the wafer support. The wafer support is supported by a support arm. Supported in the processing chamber. The support arm couples the rf signal to the wafer support. The support arm also couples the thermocouple hidden in the crystal support to the temperature measuring device for measuring the temperature of the wafer support. The thermocouple can be electrically It is isolated from RF signal device. Film can be constructed on the wafer. First, a material layer is deposited on the wafer. The material can be a binary metal nitride MxNy or a binary metal silicon nitride MxSiyNz (where μ can be titanium Ti, zirconium Zr , 铪 Hf, tantalum Ta, molybdenum Mo, tungsten, and other metals). The deposition of materials can be performed by various methods, such as chemical vapor deposition and physical vapor deposition. After depositing the material, it can be made The material is toughened by plasma so as to reduce the resistivity of the material layer. Plasma hardening may include exposing the material to an environment containing ions and electrically deviating the material layer to cause the ions to strike the material. Furthermore, the hardening effect can be multiplied by The composition of the initial step is continuously performed using different gases. For example, the first-step step can be applied by gas mixing. The paper can be applied from the Chinese National Standard (CNS) (21GX297 mm) (Please read the precautions on the back before reading) (Fill in this page) · -9- Printed by the Central Laboratories of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives, Invention Description (7) Initialization step _ One compound. The next step is to remove the hydrogen molecules from the material to reduce the resistivity The end, Oxidizable material layer. Oxidation enhances the ability of the material layer r to diffuse from the metal, such as the metal of the contact window. Re-enchantment can be exposed to our gas towel to enhance the material's ability to inhibit the diffusion of window metal. Contact window metals such as copper ... According to the present invention, deposition, initiation, and oxygenation or exposure to Shixi burn can be performed in a single-processing chamber. No wafer removal is required until all three operations are completed Therefore, the deposition, initiation, and oxidation of the material or exposure to the stone sintering can be performed in situ. Brief description of the description: Further details of the present invention are explained by means of the following drawings, of which FIG. 1 illustrates A contact window plug in an integrated circuit that includes a diffusion barrier layer. Figure 2 illustrates the contact holes in the integrated circuit, which are blocked by a diffusion barrier layer. Figure 3 (a) illustrates a chemical vapor deposition chamber "Figure 3 (b) illustrates a wafer support and a support arm of the processing chamber shown in Figure 3 (a). FIG. 4 illustrates a processing apparatus of a multi-processing chamber. FIG. 5 illustrates an embodiment of a wafer processing chamber according to the present invention. Fig. 6 illustrates a longitudinal sectional view of the wafer holder and the support arm shown in Fig. 5; This paper uses China National Standard (CNS) A4 size (210x297 Gongkang) -10- (Please read the precautions on the back before you write this page) Binding _

Ki A7 V. Description of the invention (8 Fig. 7 illustrates the enlarged sectional view of the support arm shown in Fig. 6 at the position where the support arm supports the wafer support. Fig. 8 illustrates the 7 in Fig. 7 along line 6-.6. Partial surface view. Figure 9 (a) illustrates a top view of the support arm shown in Figure 6. Figure 9 (b) illustrates a longitudinal cross-sectional view taken along line 7-7 of Figure 9 (a). Figure 10 ( a) A plan view of the thermocouple isolator in the support arm shown in Fig. 6. Fig. 10 (b) shows a longitudinal section view taken along line 8-8 of Fig. 10 (a). Fig. 11 ( a) Figure illustrates the plan view of the rf feeder isolator shown in Figure 6. Figure 11 (b) is too clear. Isolation not shown in Figure 11 (a). (Fill in this page) • Printed view of the Shell and Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. Figure 12 illustrates the plan view of the lower gusset plate of the branch arm shown in Figure 6. Figure 13 is a cross-sectional view illustrating the sixth The parts on the fixed end of the support arm shown in the figure. Figure 14 illustrates the connector parts of the RF cable located on the support arm shown in Figure 6. Figures 15 (a) -15 (c) illustrate Figure 5 Example of Matching Network shown in Figure 16 Fig. 17 shows another embodiment of the semiconductor wafer processing room according to the present invention. Fig. 17 illustrates another embodiment of the semiconductor wafer processing room according to the present invention. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). 〉, Ιτ

The Central Bureau of Standards, Ministry of Economic Affairs, Beiya Consumer Cooperation, Du Yin, IL Α7, B7 V. Description of Invention (9) Figure 18 illustrates the sheet resistance versus time diagram of a titanium nitride film deposited by a conventional deposition method. Figure 19 illustrates the Rutherford backscattering spectrum of a titanium nitride film deposited on a silicon wafer using a conventional deposition method. Figure 20 illustrates Table I. Figure 21 illustrates Table Π. Figure 22 illustrates the table] Π. Figure 23 illustrates the Rutherford backscattering spectrum of a titanium nitride film deposited by the chemical deposition method of NF3 gas flow. Fig. 24 illustrates an Auger sputtering analysis diagram of a titanium nitride film according to the present invention. Figure 25 illustrates Table IV. Figure 26 illustrates the Auger surface spectrum of elements of another titanium nitride film according to the present invention. Fig. 27 is a graph showing atomic concentrations of various elements in the titanium nitride thin film shown in Fig. 26; Fig. 28 illustrates the Auger surface spectra of elements of a control group of titanium nitride films. Fig. 29 illustrates atomic concentration maps of various elements in the control group of the titanium nitride film of Fig. 28. Fig. 30 illustrates an Auger surface spectrum of an element of another titanium nitride thin film according to the present invention. Fig. 31 is a graph showing the element concentration of various elements in the control titanium nitride film of Fig. 30; This paper size is applicable to the Chinese girl's standard (CNS) A4 specification (2ΐ〇χ297 公 和) J --------- f Packing ------ Order ------- (J. (Please read the precautions on the back before writing this page) -12- 、 Instruction of the invention (10) Fig. 32 shows the explanation table v. Fig. 33 shows the oxygen absorption of the film manufactured according to the present invention. Section 34 (a) Figure -34 (c) illustrates the reduction in organic carbon content of a film made according to the present invention. Figures 35 (a) -35 (b) illustrate the improved path resistance and contact resistance of a film formed according to the present invention. Figure 36 illustrates The resistivity of thin films made by deposition and plasma treatment using different number of cycles. Figure 37 illustrates the film resistivity and voltage as a function of the plasma processing pressure. Figure 38 (a) illustrates the curing time and frequency versus film resistance The effect of the rate please read the notice of Λ before binding. Another example of the effect of the initializing time on the resistivity of the film is shown in Figure 38 (b) of the Central Bureau of Standards of the Ministry of Economic Affairs. -39 (b) illustrates the Auger electron spectrum depth variation of a nitrided thin film formed by continuous deposition and hafnium titanium nitride layer. Figure 40 The X-ray diffraction angle scan of a 1000 angstrom titanium nitride layer deposited on a silicon wafer by a conventional chemical deposition method is shown in Fig. 41. Fig. 41 shows a silicon wafer deposited on a silicon wafer according to the present invention. Scanning of X-ray diffraction irradiation angle of 〇Å titanium nitride layer. Fig. 42 illustrates Table VI. Figs. 43 (a) -43 (b) illustrate non-oxidation and The chemical composition of the oxidation diffusion barrier layer. Figure 44 illustrates the resistance characteristics of the diffusion barrier layer formed according to the present invention. This paper is based on China National Standard (CNS) A4 (210X297 mm). -13- Ministry of Economic Affairs Printed by the Consumer Bureau of Standards Bureau A7 B7 V. Description of the invention (11) 〇 Figure 45 illustrates the Auger depth change of a film formed by stuffing silicon according to the present invention. Figure 46 illustrates the formation by depositing a silicon-containing material according to the present invention. The Auger depth change of the thin film. Figure 47 illustrates the resistivity and composition comparison of the films shown in Figures 45 and 46. Figures 4 and 8 illustrate the process for controlling the construction of a film on a substrate according to the present invention. The control unit of the room. Fig. 49 illustrates an embodiment of the present invention. In one embodiment, the operation sequence performed by the control unit shown in FIG. 48. FIG. 50 illustrates the operation sequence performed by the control unit shown in FIG. 48 in another embodiment of the present invention. Detailed description of the preferred embodiment A. Processing chamber for processing wafers 1. General Figures 3 (a) and 3 (b) jointly describe the conventional CVD processing chamber 10. The CVD reaction chamber 10 includes a processing chamber 12, in which wafers It is supported by a wafer support 16 such as a wafer base. The wafer support 16 is supported by a disc 18, which is generally made of a material such as alumina ceramics. The disk 18 is seated on the free end 20 of the support arm 22. The support arm 22 defines a cantilever by a fixed end 24 mounted on the rod 26. The lever 26 is vertically displaceable by the action of the displacement mechanism 28. The displacement mechanism 28 is operative to move the support arm 20 vertically in the processing chamber 12. During the processing of the wafer 14, the gas is injected into the processing chamber through the spray head 36 (please read the precautions on the back before filling this page).

、 1T This paper size is in accordance with China National Standards (CNS) A4 specification (210X297mm) -14- A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. The description of the invention (12) 12. The spray head 36 is generally installed directly above the wafer 14. In operation, the inside of the processing chamber 12 is heated by a group of infrared lamps 30 installed below the CVf processing chamber 10. The lamp 30 illuminates the inside of the processing chamber 12 through a quartz window 32 which is located between the lamp 30 and the inside of the processing chamber 12. The lamp 30 simultaneously supplies heat to the inside of the process 12 and the wafer support 16. Therefore, the wafer 14 on the wafer support 16 can also be heated. In order to increase the heating of the crystal holder support 16, the ceramic support plate 18 shown in Fig. 3b includes a plurality of holes 34 passing through the plate. The holes 34 are typically made transparent as shown in Figure 3b, so the disc 18 is often referred to as a "button type" plate. Thermal CVD wafer processing is very sensitive to wafer temperature. To ensure that the wafer is maintained at an appropriate temperature, the temperature of the wafer support 16 is measured by a thermocouple 38. The thermocouple 38 is supported on the free end 20 of the support 22 and is mounted in the body of the wafer support 16. The electrical conducting cable 42 couples the thermocouple to the temperature measuring device 40, which is disposed outside the processing chamber 12. The cable 42 generally extends along a hole formed in the inner center of the support arm 22. Figure 4 depicts a multi-reactor vacuum system suitable for manufacturing wafers containing integrated circuits. The processing chamber A is for pre-cleaning the substrate, and the integrated circuit will be formed on the substrate. After pre-cleaning, the substrate is transferred to the CVF processing chamber B so that the thin film can be deposited on the substrate, and then the substrate is transferred to the post-processing processing chamber C to improve the quality of the deposited film. If it is necessary to use a substance to "plug" the film to enhance the function of the film as a diffusion barrier layer, the substrate can be transferred to the processing chamber D, and "padding" can be performed in the reaction. For example, the thin film may be a fan of a titanium nitride material, and the material layer may be filled with oxygen to reduce the thin film diffusion rate of aluminum. Nitrogen is used to fill the nitrogen. Please read the note on the back of the book. The three-page bound paper size applies to the Chinese National Standard (CNS) A4 size (210X297 mm). ------------- B7 V. Description of the invention (13) ~-:-= The barrier layer is disclosed in US Patent No. 5,378 issued to Ngan et al. Barriers and contacts. " Any of the above-mentioned systems can be applied to the implementation aspects of the present invention. However, the 'none' system has the ability to deposit material on a wafer in a single-processing chamber and perform post-deposition processing on the material to form a thin film. Such post-deposition treatments may include tritiation, oxidation, exposure to silicon, or a combination thereof. 2 .. In-situ operation chamber Figure 5 illustrates a semiconductor processing chamber according to the present invention. The wafer processing chamber HOA can be used to perform in-situ deposition and deposition post-processing steps of the __ series on the semiconductor wafer 114. According to the present invention, the processing chamber described in FIG. 5 may be, for example, a chemical deposition chamber processing chamber described in detail in U.S. Patent Application Nos. 08 / 567,46 i and 08/677, i 85. The wafer processing chamber according to the present invention eliminates the need to use multiple processing chambers to deposit and process materials. For example, the wafer processing chamber IOOA can be applied to form a thin film on a wafer by depositing the material on the wafer and to initialize the deposited material to stabilize and reduce resistance. Therefore, the wafer does not need to be harmed by impurities on the outside of the processing chamber U0A during the film formation. As shown in FIG. 5, the semiconductor wafer processing chamber u0a includes a processing chamber 112 coupled to the ground. The semiconducting wafer U4 may be supported on a wafer support 116 of the processing chamber 112, which may be the same as the support 16 shown in Figs. 3 (a) and 3 (b). The wafer support 116 may be a wafer base, a pedestal, a resistance heater, or other devices suitable for supporting the wafer 114. In FIG. 5, the 'wafer support 116' is a wafer support, which is a form of wafer support commonly used when a lamp is irradiated to the wafer support 116. The crystal base is anodized and used in accordance with the Chinese National Standard (CNS) M standard (210X2.97 mm) (Please read the precautions on the back before writing this page)

-16- V. Description of the invention (M) A7 B7 The Consumer Cooperative of the Central Prototype Bureau of the Ministry of Economy is made of printed aluminum and is supported by the conventional alumina ceramic support plate 118, which is similar to the support plate 18 in Figure 3b. . The combination of the support plate 118, the wafer support 116 and the wafer 114 is supported on the free end 120 of the cantilever alumina support arm 122. The fixed end 124 of the support arm 122 is mounted on a generally vertically movable rod 126 which is electrically separated from the processing chamber by a partition 160. The vertically movable lever 126 is vertically displaceable by the displacement mechanism 128. The processing chamber 112 and its contents can be heated by a conventional lamp 130, which illuminates the wafer holder 116 through a conventional quartz window 132. The semiconductor wafer processing chamber 110A further includes a temperature measuring device 140. The temperature measurement device 14 is coupled to the wafer support 116 to sense the temperature of the wafer support 116. Vacuum pump, pressure gauge and pressure regulating valve are all included in the pressure control unit. The pressure control unit 157 adjusts the pressure in the processing chamber 112 and extracts carrier gas and reaction by-products from the processing chamber η :. The spray head 136 is located on the wafer support 116 of the processing chamber 122 and is electrically separated from the processing chamber 112 by a partition 119. The spray head 136 is supplied with a process gas from a gas screen 52. The gas screen 52 is controlled by a gas screen controller 50 in the form of a computer. In order to carry out post-deposition processing, the semiconductor wafer processing chamber u0A includes the following: the heart rate is applied to the ejection head; the ejection head functions as the first electrode, and the wafer support 116, which functions Is the second electrode. The rf source 142 can provide a signal with a low frequency of μ MHz, and preferably provides a signal with a frequency of 350 KHz. Provide rf signal to two-electrode 136 and to overcome other conventional semi-conductor Zhao wafer processing room did not provide your signal to two-electrode paper again applicable to China National Standard (CNS) A4 specification (21〇297297 (please read the back first) Please pay attention to this page and fill in this page again) Assemble · -Order 0 I-· -17- V. Challenge of the description (15) 'The conventional processing room such as the pvD processing room. In the example of this month, you can Preventing excessive application of negative bias to the ejection head 136 and excessive negative bias on the ejection head 136 can increase the ion bombardment of the ejection head 136, which is expected to be "good." IS knows that there must be a large number of targets in the PVD processing chamber. The ion of the electrode is the target material to be deposited in the target PVPV processing chamber. The target electrode has a significant negative bias voltage, so the ions can easily collide with the target material for the deposition of the target material. Moreover, in the conventional sputtering method, the negative bias of wafer support and the control of wafer muscle are generally not important β, which is not the case in the embodiment of the present invention. Controlled at wafer support 116 Negative bias on the ideal to establish the right amount of Ion flow of wafer 114. Accurately setting the temperature of wafer 114 is ideal for deposition and post-deposition processing of deposited materials. Therefore, the 'wafer support provides a coupling with rf source 142 and a thermocouple sensing mechanism ( Not shown) Magic dual function 31: The source 142 can be used to control the negative bias of the wafer support 116, and the thermocouple can be used to monitor the temperature of the wafer 114. Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy (please (Please read the notes on the back before filling this page) The wafer support 116 and support arm 122 are designed to separate the rf source signal and the thermocouple signal 'so that temperature readings can be taken. This separation allows "source and thermocouple signals to be It can be continuously transferred into the processing chamber 110A, so that the wafer 114 can be appropriately biased and heated. The wafer support arm 122 is described in detail below with reference to FIGS. 6-14. 3 Refer to Figure 6-9 (b) for the arm. The wafer 114 is supported on the wafer support 116. The support itself is supported by the conventional "button-type" alumina ceramic support plate 118. This paper has become applicable to the country of China. Standard (CNS) A4 (210X297mm) -18- V. Invention Ming (Ιό) A7 B7 The thin quartz plate 119 printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs is located between the support plate 18 and the wafer support 16. The quartz removal support 116 and the wafer processing chamber ιι〇Α Arcs occur between other components inside. The quartz plate 119 is transparent for radiating the energy provided by the lamp 130. It allows the lamp 130 to quickly heat the wafer support 116. The wafer support 116 is surrounded by a quartz shield 15o. The quartz shield 15 is located on the alumina support plate 118 (partially shown in FIG. 7) and extends on the wafer support 116 and defines a wafer receiving slot in which the wafer support 116 and the crystal can be placed. Circle 114 »Quartz Shield 150 has an upper edge that is chamfered outwardly, which allows wafer 114 to be more easily accommodated when the wafer is transferred back and forth to the wafer support. The quartz shield 150 is mainly used to shield the edges of the wafer support 16 to avoid attracting arcs. During the process, the temperature of the wafer support 116 is measured by a thermocouple 152 mounted on the wafer support 116. The thermocouple 152 is housed in an aluminum nitride sheath 154, which is tightly fitted into the body of the wafer holder U6. Sheath hopper provides electrical insulation between the thermocouple 152 and the wafer support. Although the sheath 154 is highly resistive, it remains a good thermal conductor. The sheath 154 has a low thermal mass and therefore a low thermal inertia and is suitable as a thermocouple 152. The sheath 154 is chemically stable in the processing environment of the processing chamber 113. The thermocouple 152 is connected to the temperature measuring device 14 through a conductive cable 156. As described below, the electric gauge 156 passes along the central portion of the support 122 and is electrically insulated from the radio frequency energy in any processing chamber 122. The thermocouple 152 is fixed in position by a small nickel ball 158, which is curled on a conductive thin electrode 156. The ball 158 stays in the groove _, which is formed in the key-shaped ㈣ fastener ... The key-shaped fastener 162 is keyed in the groove 164, and the groove is formed in the position I—I--I · (装 — ( Please read the precautions on the back before writing this page. 4) Λ. -19- Printed by the Consumer Cooperatives of the Central Elevator Bureau of the Ministry of Economic Affairs Α7 Β7 V. Description of the invention (17) Protrudes in the center below the wafer support 116 Stub 166. This configuration ensures that the thermocouple 152 can be moved relatively easily when the wafer support 116 is separated from the support arm 122. The above configuration ensures that the thermocouple 152 can be firmly positioned and held on the wafer support. In 116, while maintaining the electrical isolation between the crystal support i6 and the thermocouple 丨 52, the wafer support 116 is locked to the support arm 22 by a pair of bolts 168, which are screwed into the center short rod. Figure 8 shows that the support arm 120 is mainly composed of an inverted U-shaped ceramic section no. Bolts 168 pass through individual holes 1 72, the hole passes through the horizontal portion of the U-shaped section 170. For the excessive load of the bolt 168 on the horizontal portion of the u-shaped section 17p, each head is separated from the horizontal portion by the * Beivedere spring washer 174. Avoid the u-shaped section The excessive loading of the bolts 168 on the horizontal part of 170 is very important because the ceramics, especially the thin sections, will crack. The excessive bearing capacity can break the shaped section 170. The rf conductive strip 180 runs along the support arm 122 Passed. The conductive strip 180 is electrically connected to the stub 166 below the wafer support Ί 16. The rf conductive strip 180 is coated with a special high-temperature elastic dielectric material, such as polyimide, for example, available from DuPont Electronics. Company, trade name is Pyralin. Polyurethane coating provides electrical insulation of rf conductive strip 180. Furthermore, rf conductive strip 180 is electrically insulated from conductive cables through ceramic insulators 82. Parts of ceramic insulator 182 will be referenced Figures 10 (a) & 10 (b) are discussed below. Furthermore, the rf conductive strip 180 is separated from the interior of the processing chamber 112 by the "legs" of the inverted-shaped section 170 and the insulating member 184. Parts of insulator 184 will be discussed with reference to Figures 11 (a) and 11 (b) During the assembly, the thermocouple 152 and the attached sheath 154 are inserted into the wafer. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 × 29? Mm) I--I Read the precautions on the back before you write this page) Order 20. Seal A7 B7, Shellfish Consumer Cooperative, Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (18) in Block 116. Then the thermocouple is bolted by 68 The lead cable 56 is fed into the u-shaped section 170. The insulation member 182 is located on the conductive cable 156 for separating the conductive cable 156 from the conductive strip 180. Next, the rf conductive bar 180 is placed on the insulating member 182 and the insulating member 182 is placed on the rf conductive bar 180. Thus, 'the flat ceramic fastener 186 is slotted into a slot 188 formed immediately following the free end of the "leg" of the u-shaped section 170. The fasteners 186 are fasteners that are different parts located in the body of the U-shaped region 170. The parts buckled as 186 are shown in Figure 12. As illustrated in Figs. 9 (a) and 9 (b), the support arm 122 is formed of a relatively elongated central portion having enlarged portions at the free end 120 and the fixed end 124, respectively. The free end 120 of the support arm 122 has two bolt holes 172 formed on either side of the groove 190, which grooves are formed in the upper surface of the free end 120. The slot 190 receives a keyed structure 192 that extends downwardly from a stub 166 at the bottom of the wafer support 166. This key structure 192 is mated with the groove 190 and further stabilizes the wafer holder H6 when positioned on the support arm 122. Key structure zero of 192! ^ As shown in Figs. 8 and 14, the fixed end 124 of the support arm 122 is locked on the vertically movable rod 194 'and its parts will be described with reference to Fig. Π. It can be seen from Figs. 10 (a) and 10 (b) that the insulating member 182 is in the form of a U-shaped channel, and a conductive cable 156 is provided therein. The U-shaped channel has an enlarged portion 96 at one end. The enlarged portion 196 covers the rf conductive strip 180 located at the fixed end of the support arm 122. As shown in Figs. 11 (a) and 11 (b), the insulating member 184 has an enlarged portion 198 'whose dimensions are closely and tightly attached to the support. The free end 120 of the arm 122 uses the Chinese standard (CNS > A4 size (210X297 mm) for this paper size (please read the precautions on the back before filling this page) DING-21 Printed by the consumer cooperative A7 ______B7_ V. Description of the invention (19) '~ "-. Inside the enlarged part 198 has a channel 2〇 (^ When the device is assembled, ^ conductive strip 180 is located on the upper surface of the insulating member 184 2. 2. The rf conductive strip 18 is also bent to follow the contour of the interior of the channel 200. This configuration is illustrated in Figure 7 and separates the κ conductive strip 180 from the connecting screw. Bolt 168. It can also be seen from Figure 7 that it also provides appropriate The partition element 204 cooperates with the channel 200 and separates the rf conductive strip 180 and the bolt 168. The parts of the fastener 186 are illustrated in Fig. 12. The fastener 186 is generally spoon-shaped and has dimensions sized to be received on the support. Enlarged portion 206 at the free end 120 of the arm 122 During assembly, 1% of the fastener is inserted into the slot 188 by the free end 120 of the brace arm 122. As illustrated in Figure 13, the fixed end 124 of the brace arm 122 is connected to the rod 194. The rod 194 is a hollow tube, It is enlarged at the upper end to define the flange 21, and the fixed end 124 of the supporting arm 122 is bolted to the flange by the screw inspection 212. In order to avoid excessive load between the bolt 212 and the ceramic fixed end 124, Between the screw inspection 212 and the fixed end 124 of the support arm 122. A washer 214 such as Belleville bombs is provided »A stainless steel bellows 216 is provided between the flange 210 and the bottom of the processing chamber 112. The bellows 216 allows the support arm 122 to go up and down vertically Move, move, as it passes through the wall 218 of the processing chamber 122, while providing a seal around the rod 194. As mentioned above, the rod 194 is in the form of a hollow tube. Electrically non-conductive tube 22 is located in the position forming the rod Inside the tube. The non-conductive tube 220 is generally made of polyurethane material and provides electrical insulation between the processing chamber 112 and the hollow rf conductive tube 222. The rf conductive tube 222 is connected to the rf source 142 and the rf conductive strip 180 。Connected to this paper standard applicable to China National Standard (CNS) A4 (210X297 mm) ----------- (equipment - (Please read the note on the back of the item and then write inflammation of this page) book

UX -22- Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7 B7 V. Description of the invention (20) The conductive cable 156 of the thermocouple 152 and the temperature measuring device 140 passes downward through the center hole formed in the rf conductive tube 222. FIG. 14 illustrates how the rf conductive strip 180 and the rf conductive tube 222 are connected when studied together with FIG. 13. As shown in FIG. 13, the rf conductive pipe is meandered at the upper end to define a circular flange 224. The rf conductive strip 180, as shown in FIG. 14, terminates in a circular conductive ferrule 226. When the support arm 122 is assembled, the hoop 226 is placed on the circular flange 224 of the rf conductive tube 222. It provides an rf conductive connection to the rf conductive strip 180, which is coupled to the wafer support 116. This connection allows the support arm 122 to be easily assembled and disassembled. When the fixed end 124 of the support arm 122 is positioned on the flange 210 of the rod 194, this connection member also allows a certain amount of rotational freedom (on the longitudinal entrance of the rod 194). 4. Matching network According to the present invention, the rf source 142 is coupled to the wafer support 116 and the spray head 136 via a matching network 145. The matching network 145 is a resistor / inductor / capacitor network. The matching network matches the load impedance to the power source impedance, so that the power transmitted by the energy source at a certain frequency can be maximized. The matching network 145 also splits the rf power between the wafer support 116 and the spray head 136 and sets the phase shift of the rf signal provided to the spray head 136 and the wafer support 116. The matching network 145 used in one embodiment of the present invention includes a load matching transformer 70, two inductors 80 and 82, and two capacitors 72 and 74, as shown in Fig. 15 (a). One end of the load matching transformer 70 is coupled to the rf source 142 and ground, and the other end is coupled to the inductors 80 and 82. Inductors 80 and 82 are coupled to spray head 136 and wafer support 116 via capacitors 72 and 74, respectively. (Please read the notes on the back before filling this page)

Vi This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -23- A7 B7 V. Description of the invention (21) The range of the first pair of second turns ratio of load matching transformer 70 is 1: 1 to 1: 4, typically 1: 1.22. The first coil of the load matching transformer 70 according to the present invention may have 18 turns, and the second coil of the load matching transformer 70 may have 47 turns. Inductors 80 and 82 each have a 50 Ω inductance, and capacitors 72 and 74 each have a 0.01 μF capacitance. The power split and phase shift of the rf signal between the spray head 136 and the wafer support 116 can be adjusted by the load transformer. E · number ratio of 70 to change. In addition, as shown in Section 15 (b), the load matching transformer 71 may have a selectable grounding tap 78. »The optional grounding tap 78 allows selection of different grounding tap positions to change the spray head 136 and the wafer support. Power splitting and phase shifting of rf signals between 116 "Another embodiment of the matching network 145 is shown in Figure 15 (c). The capacitor 72 and the ejection head 136 are connected to the ground via a conductive choke coil 83. The capacitor 74 and the wafer support 116 are both coupled to the ground via a conductive choke 84. The conductive choke 83 and the conductive choke 84 may each have a '500 core'. »When this embodiment is applied, the spray head 136 and The wafer support 116 does not become a biased dc. When the processing chamber 110 is used for plasma amalgamation and / or oxidation, it is advantageous that both the spray head 136 and the wafer support 116 are coupled to the treatment source 142 via a matching network 145. The phase shift of the rf signal between the head 136 and the wafer support Π6 can be set to improve the uniformity of the plasma generated during post-deposition processing. The heterogeneous signal relationship between the spray head 136 and the wafer support 116 causes the ions in the plasma to be more easily attracted to the wafer support 116 than to the processing chamber 112 which is grounded. The out-of-phase relationship also increases the voltage potential between the spray head 136 and the wafer support, thereby increasing the uniformity of the ion current toward the wafer 114. The size of the private paper is in accordance with China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling in this page). -A7 B7 Printed by Huanggong Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs 5. Description of the invention (22) Adjust the power split of the signals of the jet head 136 and wafer support 116 to control the ion bombardment of the wafer 114 and jet head 136 strength. During plasma generation, the negative bias of wafer support 116 generally causes ions to accelerate toward wafer U4. The excessive negative bias of wafer support Π6 causes ions to bombard wafer 114 with energy that damages the wafer. Excessive negative bias of the spray head 136 during plasma generation generally causes ions to bombard the spray head 136 and produce contaminated particles. In one embodiment of the present invention, the power split of the 'rf source 145 signal can be selected by the operator of the processing chamber 110A. Power splitting can be set so that the negative bias of the showerhead 136 and wafer support ι16 can minimize the aforementioned tendency to contaminate and harm ion bombardment of the wafer. According to the present invention, the matching network 145 may be configured so that the rf signals supplied to the wafer support 116 and the spray head 136 have the same power and frequency, but are 180 degrees out of phase. This can effectively couple rf power to the spray head 136 and the wafer support 116 for converting the gas in the processing chamber 112 into a plasma. An example of the configuration of rf split power can be found in U.S. Patent No. 5,314,603 issued to Sugiyama et al., with the invention name "Plasma processing device capable of measuring and adjusting accurate RF power at the electrodes of the processing chamber", and awarded to Ogle U.S. Patent No. 4,871,421, et al., Entitled "Split Phase Driver of Plasma Surname System". 5. The processing officer works during the deposition period. The 'gas screen controller 50' causes the gas screen 52 to supply a CVD processing gas to the ejection head 136, such as TDMA1. The process gas is introduced into the processing chamber 112 via the ejection head 136 and transferred to The heated wafer 114. As a result, a thin film of material is deposited on the upper surface of the wafer 114. Dangying --------- 1 Pack— (Please read the precautions on the back before 4-writing this page) The size of the paper is applicable to China National Standards (CMS> A4 specification (210X297 mm) -25 -Printed by the Central Government Bureau of Shellfish Consumer Cooperative Co., Ltd. V. Description of Invention (23) A7 B7 When using TDMAT, the material film formed is titanium nitride .... When post-deposition treatment should be performed in the semiconductor wafer processing room, It can be initialized, oxidized, or exposed to Shi Xi as described below. During the plasma initialization, electropolymerized gas, such as nitrogen, hydrogen, argon, or a combination thereof can be borrowed under the control of the gas controller 50. The gas screen 52 is supplied to the ejection head 136. During the period of heavy accumulation, oxygen-based gas, such as% or N2 / 02, can be supplied to the ejection head 136 through the gas screen 52 under the control of the gas screen controller 50. In the process of 'the dream-based gas, such as tritium (SiH4), can be supplied to the ejection head 136 through the gas screen 52 under the control of the gas screen control radon. During the plasma desulfurization and oxidation process, The gas system supplied by the ejection head 136 is converted into containing positively charged ions that interact with the wafer 114 Plasma. During the exposure of Shi Xi, the gas is injected into the energy by heating the wafer 114 and the wafer support 116. Any carrier used in the deposition or post-deposition process. The gas and generated by the deposition or post-deposition process Any of the by-products can be discharged from the processing chamber 112 by the pressure control unit 157. Another processing palace sp. 筈 FIG. 16 illustrates a semiconductor wafer processing chamber 110B incorporated in another embodiment of the present invention for performing the process according to the present invention. The method of the invention. The semiconductor wafer processing unit 110B shown in FIG. 16 is the same as the processing chamber 1108 described in FIG. 5, but the constant head 136 is not coupled with the RF source. The RF source 62 is connected to the RF network 63 via a matching network 63. The wafer support 116 is coupled, and the spray head 136 is grounded. The matching network 63 uses a conventional device to match the load impedance of the wafer support 116 and the impedance of the rf source 62, so that the power delivered by # 源 62 is between _ Please read the notes above and then f. Binding this page. Paper size: Chinese National Standard (CNS) (210X297 mm-26)-Central Bureau of Standards, Ministry of Economic Affairs, Shellfish Consumer Cooperation Du printed A7 _._ B7 V. Invention description (24) fixed frequency According to the present invention, the matching network 63 and the rf source 62 can be configured to supply rf signals to the crystal support 116, so that sufficient rf energy can be provided without causing the wafer 114 to become excessively negatively biased. The slurry is initialized or oxidized. Fig. 17 illustrates a semiconductor wafer processing chamber 110C incorporated in another embodiment of the present invention and the method according to the present invention can be performed. The semi-conducting wafer processing chamber 110C shown in Fig. 17 and The processing chamber shown in FIG. 5 is the same, but Ming Quilt _136 and Jingyuan Support 116 are respectively coupled to different RF sources. The rf source 143 is coupled to the spray head 136 via a matching network 146, and the rf source 144 is coupled to the wafer support 116 via a matching network 147. The matching networks 146 and 147 each use a conventional device to match the load impedance to the energy impedance of the head 136 and the wafer support 116, respectively. Matching maximizes the power delivered by each energy source at a certain frequency. Preferably, the sources 143 and 144 may be coupled together (not shown) for controlling the phase and power split between the RF signals provided to the spray head 136 and the wafer support 116. According to the present invention, the matching networks 146 and 147 and the rf sources 143 and 144 may be configured so that the rf signals supplied to the wafer support 116 and the ejection head 136 have the same power and frequency, but present in another aspect of the present invention. In the embodiment, the wafer support 116 shown in any one of the figures 5, 16 or 17 may be a resistance heater. The resistance heater supports the wafer 114 and incorporates a resistance coil for heating the wafer 114. The semiconductor crystal processing chambers shown in Figures 5, 16, and 17 are used for many processes in lamps. In another aspect of the present invention, a method for forming a diffusion barrier layer is provided. It can be recognized that the method of the present invention can be advantageously applied to the aforementioned paper size of the Chinese paper standard (CNS) Congxie (21Qx297)--27- (Please read the precautions on the back before writing this page)

Printed by the Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives M '' 1 1 _—— ____ Β7_ V. Description of the Invention (25) ^ ------ It should be carried out in the center. The method can be performed in any suitable processing chamber. Two Construction Films 丄 · General Embodiments of the present invention provide a construction of a thin film having an improved resistivity value on an integrated circuit. A thin film may be a diffusion barrier layer. However, other thin films that want to suppress the diffusion of contact window metals such as Shao and copper can also be constructed using embodiments of the present invention. According to the present invention, a material layer is deposited on a substrate such as a semiconductor wafer. The material is then electrically initialized to reduce the resistivity of the deposited material. Therefore, a new layer of material can be deposited on previously deposited material. Initialize the material again to reduce the resistivity of the material. The deposition and initialization of the material can be repeated several times to form a thin film on the upper surface of the wafer. Another aspect of the present invention provides for the packing of molecules in a halogenated material on a wafer. Packing enhances the material's ability to inhibit diffusion of contact window metals such as aluminum and copper. In order to enhance the function of the film as a barrier layer, the filling can be achieved by oxidizing the material that has been initialized. In order to enhance the function of the thin film as a copper barrier layer, the filling can be achieved by exposing the initialized material to Shi Xiyao's sentence. In addition, reduced copper diffusion can be obtained from materials that deposit ternary metal silicon nitride. Another aspect of the present invention provides deposition, tritium, and packing of materials formed in situ on a wafer. h Initialization to reduce the film-thinning rate. According to the present invention, a thin film can be deposited by depositing a material layer and plasma-coated. Equipment-(Please read the precautions on the back before writing this page), Tr -28-A7 Printed B7 by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (26) On the wafer, the resistivity of the film can be reduced. A material layer is deposited on the wafer in a processing chamber, which can perform conventional chemical vapor deposition methods, such as shown in Figure 3 (a). The processing chamber 10 shown in FIG. 5, the processing chamber 11A shown in FIG. 5, the processing chamber nog shown in FIG. 16, or the processing chamber 110 (::. Titanium nitride material deposition shown in FIG. 17) This can be achieved by using a metal-organic titanium compound, preferably a tetrakis (dialkylamino) titanium (Ti (NR2) 4) o carrier gas, such as helium, argon, nitrogen or hydrogen, carrying the titanium compound into the processing chamber. In the processing chamber, in order for the titanium titanate to react with indirectly generated reactive substances, the reactive substances such as halogen, ammonia or hydrogen In order to promote the deposition of titanium titanate, the wafer temperature is set at about 200-60 rc, and the processing chamber pressure is set at about 0.1-100 Torr. The deposited titanium nitride contains a significant amount of carbon, thereby causing The obtained titanium nitride film has chemical reactivity. Therefore, when the film is exposed to air or other oxygen-containing gas, the film absorbs oxygen. Because the absorption of oxygen cannot be controlled, the stability of the film is impaired and the film is negatively increased. Resistivity. It can cause poor durability of the device that forms the wafer. After exposure to air, the film resistivity of the deposited nitride film can increase to about 10,000 # Ω -cm / sq up to about 10, 〇〇〇 is Q _cm / sq value. When the deposited titanium nitride system is used as a conductive contact point or barrier layer, the resistivity value is highly unsatisfactory. For the barrier layer, the ideal resistivity The rating is 1,000 V Ω -cm / sq or lower. According to the present invention, the deposited titanium nitride film is a plasma containing a high-energy ionizing inert plasma. This ion can be obtained by crystallizing the crystal. Yuanshi applies this paper to Chinese national standards ( CNS) A4 specification (210X297 mm) (Please read the precautions on the back before writing this page 4) Installation--Order h -29- V. Description of the invention (27) A7 B7. DC bias plasma can be used A low-power source coupled to the wafer support and providing sufficient power to form a plasma from the precursor gas is applied to the wafer. A voltage of approximately 100 to 1,000 volts is sufficient for the wafer. For example, having only 100 400 volts of Watt rf power can be used to form an electric mass. It is sufficient to form high energy ions and to passivate or brighten a titanium nitride film, so that the film can remain stable for an extended time. When the film is exposed to air, oxygen, or water vapor, if the wafer is not biased, the film will not absorb oxygen or absorb very little. "Titanium nitride films deposited and tritiated according to the present invention and conventional metals -Compared with titanium nitride film produced by thermal CVD of organic titanium compounds, it is more crystalline, contains more nitrogen, and has low oxygen and carbon content in ticks. Has low and stable resistivity. Real mechanism is unknown. However, it is believed that the high energy ion bombardment of the film that has been deposited on the biased substrate strengthens the film. Nitrogen Plasma a-(Please read the precautions on the back before writing this page)

A In the embodiment of the present invention, the shellfish consumer cooperation of the Central Standards Bureau of the Ministry of Economic Affairs is used to form a gas used for forming a thin film that has been deposited. The gas can be any gas, but it is preferably free of oxygen and carbon. Gases such as chaos, ammonia or hydrogen. Nitrogen is the most effective gas for purifying titanium nitride materials. In addition, the deposited materials can be attacked by ions generated from non-gaseous materials, such as ion sources. Plasma treatment of the deposited titanium nitride will not negatively affect the performance of the particles, the scope of the steps' deposition rate of the deposited material or the surface of the barrier layer. Titanium nitride has been printed in the conventional vacuum chemical vapor deposition outdoor samples under the following conditions. -30- A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (28) Deposited on a silicon wafer. on. The pressure in the processing chamber 12 is 0.45 Torr, and the temperature of the wafer holder 16 is set to 420 t. A 400scm helium flow was used through a bubbler containing Ti (NR2) 4, and the flow rate of the nitrogen diluent was set at 100 sccm. After the deposition of thallium nitride, an argon flushing gas was passed through the processing chamber at 200 scccn. A conventional CVD method for depositing titanium nitride is disclosed in US Patent No. 5,246,881 issued to Sandhu et al. As a result, titanium nitride is deposited at a deposition rate of about 42.5 bar per minute. The obtained titanium nitride film is very uniform in thickness, and the variation in thickness of four wafers is only 3.03%. However, the thin film resistivity (average of 4 wafers) is as high as u, 360 β Ω -cm / sq. The resistivity is also unstable. Figure 18 is a graph of the film resistivity (expressed in Q / sq) versus time (expressed in hours) of the deposited titanium nitride. The measurement indicated by □ is taken from the film taken out of the sedimentation chamber after the desired film thickness is obtained. The measurement indicated by 0 was taken from a film cooled to 150 ° C before being removed from the deposition chamber. Although the thin film electrical composition of the thin film is lower than that of the thin film, its thin film resistivity increases with time. These properties are not ideal for a diffusion barrier layer. Rutherford backscattering measurements were performed on the deposited titanium nitride films. The resulting spectrum is shown in Figure 19. Like the silicon interface, the peaks of carbon c, nitrogen n, and oxygen 0 appear prominently on the spectrum. The contents of different materials in the nitrated beverage are as follows: carbon content is about 30%, nitrogen content is about 24%, oxygen content is about 25%, and titanium content is about 23%. It is shown that the deposited titanium nitride material contains relatively high amounts of carbon and oxygen impurities. Efforts have been made to reduce the film resistivity of titanium nitride and to change the deposition method of titanium nitride by adding various gases during the deposition process. The results are shown in the table (please read the precautions on the back before filling this page).

&amp; Paper size applies to China National Standard (CNS) A4 (· 2ιχχ297 mm) -31-Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (29) I The titanium layer of the control group shown in Table 1 of Fig. 20 is deposited by the method just mentioned. During deposition, the most successful embodiment of reducing the film resistivity of titanium nitride includes a NF3 (7 seem) flow, which can reduce the film resistivity to 2,200 Ω-cm. However, Rutherford reverse-scattering spectra of NF3-treated materials (see Figure 23) show that impurities doped in the film are avoided. Blending of fluorine is not desirable. Furthermore, a gas flow and plasma treatment before deposition and after deposition are used to determine whether such treatment will affect the film resistivity of the deposited titanium nitride. In two examples, plasma was induced before and after chemical vapor deposition of titanium nitride. Utilizing a low power of 100 watts to generate a plasma and unbiased a substrate silicon wafer containing titanium nitride deposits. The results are summarized in Table π and shown in Figure 21. Sedimentation and post-settling treatments have no significant effect on the resistivity of the deposited nitride nitride film. Therefore, it is highly unexpected that applying a bias voltage to the wafer in the plasma will reduce the resistivity of the film and keep the film stable for an extended period of time. The other methods of the present invention are further illustrated by the following examples, but the invention is not limited to the details in these examples. A series of tests were performed in which a bias voltage of 400 volts was applied to a silicon wafer substrate having a titanium nitride layer. In the processing chamber 110B of FIG. 16, titanium nitride is deposited on a wafer and plasma-etched at an applied rf power of about 100 watts. Continuously cycle deposition and bias. Repeat these two steps more than 5 times. A summary of the deposition thickness, number of cycles, and resistivity over extended time periods is shown in Table 羾 and is shown in Figure 22. (<Please read the precautions on the back before writing this page. 4) Installation-The assembly is deposited in 5 uninterrupted steps, but it is not triturated in the plasma during the deposition.

-32-, Description of the invention (30) The “Resistance of Nitrided Drink Resistivity can be significantly reduced and printed dramatically by the deposition of titanium nitride after the deposition of titanium nitride, as shown in Table III printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. Improved stability. In each embodiment of the watch, the resistivity and resistivity change over an extended period of time were better than those of the control group. The initial resistivity of the initialized titanium nitride is low, and the resistivity increase over time is small. Fig. 24 is an Auger analysis chart of the titanium nitride film of Example i. The figure shows the relationship between the original B agronomy of the elements in the film and the minus bond edge depth (in Angstroms) of the film. Titanium nitride is biased twice within 30 seconds (see Table Gourd). As shown in Fig. 24 ', the titanium oxide is dimensionally determined, but the figure clearly shows that the film surface has a high nitrogen concentration and a low carbon and oxygen concentration. The reduction in carbon and oxygen mass can be sustained to a depth of about 100 Angstroms. At the Chee's depth, when the #film first uses high-energy nitrogen atomic hemp, the nitrogen concentration increases, while the carbon and oxygen content decreases. Figure 24 also shows the change in the elemental composition of the film after the initialisation according to the invention. Elemental analysis as a function of depth is shown in Table jy and is shown in Figure 25. Since a titanium nitride film with a thickness of 100 angstroms is suitable as the barrier layer, the post-deposition halide of the present invention can ideally improve the stability of the titanium nitride barrier layer and reduce the resistivity. The Auger spectrum showing 70 elements present on the surface of the post-deposited tritiated titanium nitride of Example 7 is shown in FIG. The spectrum shows that most of the deposited material is titanium nitride containing some titanium. Carbon and oxygen exist on the surface and are impurities. However, the Auger sputtering analysis of Example 7, as shown in FIG. 27, shows that the oxygen concentration is reduced to a low level in most films. In addition to oxygen, carbon is the only major impurity. "The carbonization method does not affect carbon residue." At a depth of 200 angstroms, the various elements in the film please k. Read the precautions on the back and re-bound. System V. Description of the invention (31) The concentration in atomic percentage is 1, 2 8%; carbon, 20 9%: titanium '38.8%; and nitrogen, 37.54%. Does not contain silicon. For comparison, Figure 28 shows the surface Auger analysis of the control film, and Figure 29 shows the sputtering Auger analysis of the control film. The oxygen content of the control film was significantly higher. At a depth of 200 angstroms, the elemental concentration of the control film was expressed in atomic percentages as: oxygen, 108%; carbon, 207% ', 41.0%; and nitrogen, 27.5%. The surface Auger analysis of the titanium nitride film without Shi Xi in Example 8 is shown in FIG. 30, and the relationship between the sputtering Auger analysis and the depth (in Angstroms) is shown in FIG. 31. The oxygen content of this film was measured at 43 angstroms, and the elemental concentration was expressed in atomic percentage as: oxygen, 3.1% · 'carbon, 13.7%; titanium, 40.0%; and nitrogen' 43.2%. Does not include hair. The density of the titanium nitride deposited films of the control group and the examples was measured using Rutherford back-scattering, and expressed in atoms / cm3. The data is summarized in Table V and shown in Figure 32. As shown in the data in Table V, plasma toughening involves bombarding the deposited titanium nitride with high-energy ions, which increases the density of the titanium nitride film compared to the control group. The invention is not limited to a nitride barrier layer. The invention can also improve the properties and chemical composition of other chemical materials, such as aluminum, copper, titanium, titanium, pentoxide, silicide, and other nitrides. For example, the implementation of various aspects of the present invention can improve the monometallic gaseous MxNy and ternary metal nitrides.

The properties and chemical composition of MxSiyNz (where M is Ti, Zr, Hf 'Ta, Mo, W and other metals). Substrates other than silicon wafers can be used, such as steel, metal, oxide, glass, and dream compounds. This paper size is applicable to China National Standard (CNS) A4 (210X297mm) L --------- ^ ^ ------ tr ---- 1-^ j {Please read first Note on the back (4. Write this page) -34- Employee Consumer Cooperatives, Central Bureau of Standards, Ministry of Economic Affairs, 5-¾ A7 B7 V. Inventory (32) Deposition and plasma plasma conversion can be equipped with precursors The gas and plasma may output power in a single CVD processing chamber, such as the processing chambers uOA, noB, and iioo. When the processing chambers 110A, 110B, or 110 (:) are used, a thin film of titanium nitride can be deposited and then Directly in the same processing chamber. Furthermore, when the present invention is implemented using the device shown in Figure 3 (a), more than one processing chamber can be applied. When more than one processing chamber is used, when When transferring from the CVD processing chamber 10 to the halogenated processing chamber, it is best to maintain a vacuum. When the plasma hardening of the deposited titanium nitride is performed in the processing chamber 110B, the following steps can be performed. Wafer 114 It is placed on the wafer support 116. and is spaced apart from the jet head B6 by about 0.3 to 0.8, preferably from 0 to 6 忖. 500 watts and the rf energy of the 350 kHz rf signal source are applied to the substrate to obtain energetic ions. The surface area of the wafer 114 per square centimeter (em2) transfers approximately 0.3 to L6 watts of power. The wafer support 116 and the spray head 136 and the processing chamber wall 'can induce a DC self-bias voltage between 50 and 1,000 volts. Preferably' a DC self-bias voltage between the wafer 114 and the ground It is between 200 and 800 volts. This is enough to attract ions to bombard the n4 surface of the wafer at high energy. As a result, the deposited titanium nitride can be inerted or strengthened, so that the titanium nitride can be stable for an extended period of time. Figure 33 is a graph of oxygen atomic concentration versus air exposure time for two different titanium nitride layers formed according to the present invention. The titanium dinitride films are all processed to the inner deposition and plasma initializing. This process chamber It is similar to the above-mentioned processing chamber 110B. For each film, the thickness is formed by cyclic deposition and chemical conversion. This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) U --- ------ Γ Install ------ Order ---- ^ --- (Please read the note on the back first (Please fill in this page again) -35- Printing of A7 by the Consumer Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs ~ --------- _B7_ V. Description of the Invention (33) The gasification film of Egypt. "To achieve this purpose, A layer with a thickness of 1 GG was deposited and then tritiated, and then a second layer with a thickness of 100 angstroms was deposited and tritiated. The tritium was achieved using a N2 plasma. The oxygen atomic concentrations of the two films were repeatedly measured within 24 hours. The percentages are also reflected on graph 312. As can be seen from graph 312, the oxygen concentration was initially about 2%. The content was less than 2.5% after 24 hours, indicating that the deposited film was very stable. For comparison, FIG. 314 illustrates the oxygen concentration measurement of a titanium nitride thin film deposited by the conventional CVD but not tritiated method. Not only do these films have a higher (15%) initial oxygen concentration, they also absorb oxygen at a faster rate. The film formed by the conventional method is also unstable for a prolonged period of time, and the resistivity increases significantly. For comparison, point 316 in FIG. 34 illustrates a typical oxygen concentration (about 1%) of a titanium nitride film deposited by a physical vapor deposition method. Figures 34 (a)-(c) are graphical representations of xPSf spectra of different films. Figure 34 (a) shows the spectrum of a 200 angstrom unfluorinated film and is shown at 316. The amount of organically bound discs is very high. For comparison, the 200 angstrom film measurements used to plot Figures 34 (b) and (c) show reduced organic bound carbon at 317 and 318, respectively. It should be noted that the thin film of FIG. 34 (b) is formed by depositing a 100 angstrom nitride layer and plasma initiation according to the present invention, and then performing deposition and hafnium of a second titanium nitride layer of angstrom. . The thin film of Fig. 34 (c) is formed by successively depositing and triturating four titanium nitride layers with a thickness of 50 angstroms. Items 35 (a) and (b) (i) further describe improvements of the present invention. Figure 35 &amp; shows the via resistance of a CVD titanium nitride film, which was deposited and initialized with a N2 plasma. The via is first connected to a cvd nitrogen nitride adhesion layer and then filled with a CVD tungsten plug. Figure 35 (a) provides the path resistance. The paper size is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) ----------- {Installation-- (Please read the precautions on the back first) (I write this page again), 1T J .. * 1 Hi

1 I -36- A7 B7 V. Explanation of the invention (34) Thickness map of thin film deposition. The map is drawn for the 05 // m path, and the aspect ratio is about 2.5. As shown in the figure, the via resistance of the plasma-thinned film (Figure 32) is substantially lower than that of a conventionally-deposited thin film (Figure 322). For comparison, the arrow 324 illustrates the path resistance of the pVD-deposited titanium nitride film. A similar improvement is illustrated by Figure 35 (b), which is a graphical representation of the contact resistance of silicide vs. It thickness. The map is drawn for a contact point of 0 5 a m with an aspect ratio of about 2.5. FIG. 33 shows the resistance of a contact point prepared by N2 plasma treatment according to the present invention. The resistance illustrated in Figure 33 is substantially lower than the resistance illustrated in Figure 322. The resistance illustrated in Figure 322 is derived from the conventional technique CVD deposition. For comparison, the contact resistance of the pvD titanium nitride control group is indicated by arrow 324. Fig. 36 illustrates the scenario of the deposition and tempering cycles used to produce a single thin film of the desired thickness. The titanium nitride thin film with a total thickness of fan angstroms is deposited by a chemical vapor deposition method and by chemical conversion. In the first example illustrated by FIG. 340, the process cycle is four times, and each of the four layers deposited has a thickness of 500 angstroms and is plasma-cured before being deposited. In the second example illustrated by FIG. 342, 'deposit two layers each having a thickness of 100 angstroms and individually melt them. "The example shown in Fig. 340 shows a resistivity (500 to 600 ren Q _cm) than the resistivity shown in curve 342. (700 to 800 // Ω.) Is low. However, the resistivity of the thin films shown in FIGS. 340 and 342 are both lower than the upper limit of 1000 Ω-cm. Moreover, the increase in resistivity within 8 days of each case is nearly equal, and both cases are at least less than 5%. f Binding ------ fw- (Please read the notes on the back first and then write this page) Printed by the Shell Worker Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs-37 Print

V. Description of the invention (35) Other tests were performed to determine the effect of plasma treatment pressure on film resistivity and DC bias. The results of these tests are illustrated in Figure 37. Figure 37 is a continuation of the 200 Angstrom Nitrogen deposition, which was processed in a plasma order for 60 seconds, using about 20 watts of power. As shown in Fig. 350, a thin film exhibiting improved resistivity produced by the present invention is generally not affected by the processing pressure. However, it has been shown that when the processing pressure is lower than about 200 mTorr, a low resistivity cannot be reached. As shown in Figure 352, the induced DC bias exceeding the reduced plasma is substantially equal to the processing pressure, and the induced DC bias is about 2000 to 10,000 millitorr. Therefore, 'the bias voltage is maintained fairly constant at about 150 volts. Figure 38 (a) illustrates the effect of processing time and frequency on film resistivity. Compare 4 different films, each with a total thickness of 200 Angstroms. The first type of thin film, as shown in Figure 360, is formed by initially depositing and curing a film of 50 angstroms in thickness and then depositing and curing 6 layers of 25 angstroms in thickness. Was previously converted. The second type of thin film, as shown in Figure 362, is formed by depositing and aerating 4 layers of 50 angstroms respectively. The third type of thin film, shown in Fig. 364, is formed by depositing and aerating two layers each having a thickness of 100 angstroms. The final thin film, represented by Figure 366, is formed by depositing a single layer with a thickness of 200 angstroms and then aerating in accordance with the present invention. From the graph in Figure 38 (a), many observations can be made. The figure shows that when the final film layer is composed of a higher number of individual layers, a lower resistivity can be achieved. Furthermore, the thinner the individual film layers, the lower the effect of plasma treatment time on resistivity. Fig. 38 &gt;) illustrates another example of the influence of the plasma treatment time on the resistivity of the thin film. This paper is printed from the applicable Zhongguanjiazheng Standard (CNS) (2ωχ297mm) -38- A7 B7 Printed by Shellfish Consumer Cooperative of Central Bureau of Standards, Ministry of Economy In addition to other properties, the method of the present invention can be used to achieve other purposes. Analysis of the thin film hardened with N2 plasma showed an increase in the amount of nitrogen near the surface of the thin film. It shows that some nitrogen ions have been embedded in and reacted with the film. Therefore, this process can be used to enrich the film with ions / molecules from the plasma. Furthermore, this process can be used to release or replace unwanted molecules / ions from the film. Figures 34 (b)-(c) show that carbon atoms are emitted when the film is bombarded. / 氤 雷 链 In another embodiment of the present invention, when a thin film deposited on a wafer m is plasma-magnetized, a mixture of nitrogen and hydrogen may be used to generate a plasma. The first step '...- · 1 / hybrid is to deposit a titanium nitride film on the wafer 114 by the conventional thermal CVD method. A plasma generated from a gas containing a mixture of nitrogen and hydrogen is then used to tritify the deposited material. If these steps are performed using any one of the processing chambers ΠOA, 110B, or 110C, the CVD 'processing and chemical conversion can be performed in the same processing chamber. In addition, titanium nitride may be deposited on the wafer H4 in one processing chamber, and the wafer 114 may be transferred to another processing chamber for post-deposition and tritiation. When the processing chamber 110A is applied, the wafer 114 may be placed on the wafer support 116 and spaced from the spray head 136 by about 0.3 to 0.8 inches, preferably 0.6 to 0.7 pairs. As described above, a layer of titanium nitride may be deposited on the wafer 114. The thickness of the initially deposited titanium nitride layer may be 50 to 200 Angstroms. After the deposition is completed, the plasma hardening of the deposited material begins. A gas containing a 3: 1 mixture of nitrogen and hydrogen is introduced to 112 through a spray head 136. Introduce the mixing of gas and hydrogen at a nitrogen flow rate of about 300 sccm. Please read the note of iBj first.

I binding-I} * y -39-, invention description (37). The rf source 142 then supplies 350 watts of power at 350 KHz via the matching network 145 to generate rf signals to the wafer support H6 and the spray head 136. Preferably, the rf signals of the spray head 136 and the wafer support 116 are 180 degrees out of phase. Although the above-mentioned nitrogen-to-nitrogen ratio is 3: 1, 1: 2 can also be used. In general, the higher proportion of hydrogen in the mixture results in films with higher long-term stability. However, too much hydrogen in the plasma may cause a bond between hydrogen and carbon in the film to form a polymer, increase the resistivity of the film, and under the influence of the rf power supplied to the spray head 136 and the wafer support 116, a band containing Plasma of positively charged nitrogen and hydrogen ions. Plasma is usually maintained for 10-30 seconds. As described above, the processing chamber 112 is grounded. The ejection head 136 requires a negative bias voltage of -100 to -400 volts, which is generally -200 volts. The self-bias voltage of wafer 114 requires a negative bias voltage between 100 and 400 volts, which is generally 300 volts. The negative bias volts remain approximately constant during the bombardment. During the bombardment, positively charged ions are accelerated from the plasma toward the surface of the crystal circle 114 by a voltage gradient. This caused the ions to bombard the wafer surface and penetrate to a depth of 50 to 100 Angstroms. Neutral atomic particles with energy from the plasma can also bombard wafer 114. As a result of the ion bombardment, compression of the deposited material is produced and the thickness is reduced by 20 to 50 Angstroms. This reduction in thickness is determined by wafer temperature and plasma processing time and energy. Other titanium nitride layers can be successively deposited and halogenated as needed. Preferably, each of the other layers has a thickness ranging from 50 to 100 angstroms. After the halogenation is completed, the resulting titanium nitride film exhibits many improved properties. The oxygen content is reduced by about 20 to 25%, resulting in less than 1% oxygen content in deposited and tritiated materials. The density of the film increased from less than 3 g / cm3 A7 B7 V. Description of the invention (38) (g / cm3) to about 3.9 (g / cm3). The amount of carbon incorporated into the film is reduced by 25% or more, so that the carbon content of the deposited film is 3%. The structure of the thin film was changed, and the resistivity of the thin film was reduced from about 10.0% # Q_cmi before the treatment to as low as 150 a Q-cm. When the originalized film is exposed to oxygen, air, or water vapor, the amount of oxygen absorbed is lower than that of the non-cured deposited film. Plasma deliquescence causes nitrogen from the plasma to replace carbon and nitrogen in the so-called deposited film. Please read the note

I Printed by Shelley Consumer Cooperative, Central Bureau of the Ministry of Economic Affairs, has found that adding lice to the plasma-forming gas can significantly reduce the amount of carbon coated inside the processing chamber 112 when carbon is released from the film by ion bombardment . The reduction of the carbon coating of the processing chamber 112 is advantageous because the carbon coating changes the impedance of the processing chamber and makes precise control of the plasma difficult. The reduction of the carbon coating causes the processing chamber 112 to be used more often before it needs to be cleaned. Fig. 39 (a) shows the change in depth of the Auger electron spectrum of a titanium nitride layer formed by successively depositing and initializing a titanium nitride layer having a thickness of 100 angstroms on a dioxane layer. It can be seen from the 39th paragraph that the 'whole' film has most of uniform carbon and oxygen contents, in which carbon is 9 atomic percent and oxygen is 2 atomic percent. The resistivity of the tritiated titanium nitride film is about 25 ° from Ω. Figure 39 (b) shows the improvement obtained by depositing a thickened nitrided layer. Figure 39 (b) Figure 39 (i) shows the Auger electron spectrum depth change of a titanium nitride layer formed by successively depositing and initializing a titanium nitride layer with a thickness of 0 angstroms on the top of the dioxane. Once again, you can see that most of the films have an oxygen-like content of __, and the medium carbon is 3 atomic percent and the oxygen is! Atomic percentage. The process involving nitrogen is described in the process of thick 1GG. The resistivity of the film is only ⑽ &quot; ◦.

$ Binding V ^ · -41-Printed A7 B7 by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. V. Description of the invention (39) '~-0 ~ ^ ~ 2_nitrogen / hydrogen / rare i In another embodiment, the initial plasma formed by using a gas and a gas mixture of gas may also include other gases, such as nitrogen, nitrogen, and ammonia. Containing other noble gases can also improve ion wire processing. Because gas atoms are heavier than nitrogen atoms, argon atoms can provide superior bombardment output. Furthermore, it is conceivable that the composition of a thin film composed of a material other than titanium nitride can also be changed in a manner similar to that used in the present invention. Other gases can be added to the plasma to change the chemical composition of the film, either by blending with the film or reacting with impurities present in the film. For example, NH3 and CH4 can be used. It is preferred to use an oxygen-based plasma treatment of the oxide film, such as Ta205. Although the present invention has been described by plasma bombarded CVD deposited films, the present invention has applicability to PVD-deposited films. Furthermore, the present invention finds special applications on binary metal nitrides MxNy and ternary metal silicon nitrides * MxSiyNz (where M can be Ti, Zr, Hf, Ta, Mo, W, and other metals). The invention can also be used to improve the morphology of films in an advantageous manner. The thin barrier layer material can be applied to the high-density ion bombardment of the present invention to improve the uniformity of the crystal grain orientation of the thin film. Because the orientation of the underlying crystal grains affects the structure of the subsequent deposited layer, the present invention has the ability to adjust and improve the morphology of the subsequent deposited layer by improving the crystal structure and / or crystal growth orientation of the underlying layer. The morphology of multiple layers can be controlled by depositing a thin nucleation interface layer with a thickness of less than 50 Angstroms, adjusting the morphology by high-density ion bombardment, and then depositing most or the rest of the film by standard techniques. The structure of the cover layer is based on the paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ~~~ '(Please read the precautions on the back before writing the page 4)

、 1T -42- A7 B7 40 V. Description of the invention (The structure of the bottom layer adjusted before. This can be explained with reference to Figure 40. As far as the titanium nitride film is concerned, its better crystal and orientation can be determined as &lt; 2〇〇 &gt;. It is speculated that adding hydrogen to the plasma can improve the film by making the film more crystalline. Figure 40 is an X-ray scattering grazing angle scan of a conventional titanium nitride layer. The titanium nitride layer is 1000 angstroms thick and is deposited on a silicon wafer. The points on the curve indicate that they are in the &lt; 200 &gt; orientation.

It can be seen from the figure that the number of the upper grains is 300, and there is no obvious peak of TiN &lt; 200 &gt;. This indicates the weak crystallinity TiN &lt; 200 &gt; of a thin film formed by a conventional CVD method. Fig. 41 is an X-ray scattering grazing angle scan of a CVD titanium nitride layer deposited on a silicon wafer and tritiated according to the present invention. The titanium nitride layer is 1,000 angstroms thick. This diffraction pattern shows that the film is microcrystalline and has a significantly increased preferred orientation &lt; 200 &gt;, as shown by reference numeral 350. There are more grains located in the direction of &lt; 200 &gt;, bounded between 40 and 45 degrees. In addition, the peak 31o is significantly lower in Figure 40 than in Figure 41. ——3. Lian Jinghua In order to further reduce the resistivity of the deposited film, the plasma hardening process can be changed according to the present invention to make it Contains two continuous plasma dehydration steps. The first annealing step is performed using a gas mixture containing nitrogen and hydrogen as described above to form a plasma. The second initializing step is performed to remove hydrogen from the initialized material because the affinity of hydrogen for oxygen causes an increase in resistivity. Ions formed by the second plasma bombard the deposited and tritiated material, thereby causing hydrogen on the surface of the material to be released from the film as a waste by-product. The reduction of hydrogen reduces the material's affinity for oxygen, which makes the film have a lower electrical paper size. Applicable to the Chinese National Standard (CNS) MC grid (210X297 male thin pack-(Please read the precautions on the back before reading 4) -Write this page)

. • Printed by Zhengong Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs -43- V. Description of Invention (41) A7 B7

The Central Standards Bureau of the Ministry of Economic Affairs, Zhengong Consumer Cooperative, printed the resistance rate and showed improved stability. In the second continuous desulfurization step, the gas used to form the plasma may include nitrogen or a mixture of nitrogen and helium, argon, or neon. Helium is preferred because it can increase the ionization of nitrogen molecules and reduce the combined probability of N +, N2 +, N3 +, and N4 + ions. The mixture of nitrogen and helium is better than using nitrogen alone, because the ions of helium-based plasma can increase the ionization efficiency, thereby promoting the ion reactivity and achieving a larger penetration depth. A larger penetration depth can replace a larger amount of hydrogen &apos; so that the resistivity of the material can be reduced to a maximum. Furthermore, the small mass of helium makes it possible to fill vacancies left in the material due to the release of hydrogen atoms, which are too small for gas atoms to fill. According to the present invention, the wafer 114 is placed in a processing chamber, such as a processing chamber, and a material layer is deposited on the wafer as described above. The deposited material may be titanium nitride for use as a diffusion barrier. Once the material layer is deposited, the first decantation process can be performed by ion bombardment. When the wafer is placed on the wafer support 116, the distance between the wafer 114 and the spray head 136 may be 0.3 to 0.8 inches. Preferably, the distance between the wafer 114 and the ejection head 136 is between 0.6 and 0.7 inches. The ion strike is achieved by first delivering gas to the processing chamber U2 via the ejection head 136. In the embodiment of the present invention, the gas vessel is a mixture of nitrogen and gas', wherein the ratio of nitrogen to hydrogen is 2: 3 and is introduced into the processing chamber 112 at a nitrogen flow rate of approximately weaving coffee. The pressure μ in the processing chamber 112 is about iq Torr, and the wafer temperature is set to be between 35 ° C. and 45 ° C. In another embodiment of the present invention, the gas may include a nitrogen to hydrogen ratio of 3 : A mixture between m.

(Please read the precautions on the back before #writing this page) Binding and ordering m 1 ^ 1 i ^ i— m -44- Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (42) Next, During the first halogenation process, the rf source 142 supplies the rf signal to the spray head 136 and the wafer support 116. This causes the gas to form a plasma containing positively charged ions. The rf source 142 can supply 350 watts of rf power at 350 kHz. The rf signal can be generated to the spray head 136 and the wafer support 116 through the matching network 145. The spray head 136 and the support 116 are 180 degrees out of phase. Generally, the plasma is maintained for 20 seconds. The rf source 142 may alternately supply rf power of 350 watts at frequencies below 1 MHz. The repeated cycling of voltage from the rf source causes an excess of electrons near the wafer, which creates a negative bias at the wafer 114. Wafer carrier 116 may require a negative bias voltage of -100 to -400 volts, typically -300 volts, and head 136 may require a negative bias voltage of -100 to -400 volts, typically -200 volts . The processing chamber 112 is grounded, and the negative bias of the wafer 114 is in the range of -100 to -400 volts, generally -300 volts, which is maintained constant during the ion bombardment. During ion bombardment, positively charged ions from the plasma are accelerated into the surface of the wafer '114 by a voltage gradient and penetrate through the surface of the wafer to a depth between 100 and 110 angstroms. Neutral atomic particles with energy from the plasma can also bomb the wafer 114. Once the first curing is completed in 20 seconds, the processing chamber 112 is cleaned. Then, the p-th curing is started. In one embodiment of the present invention, the gas generated by the plasma is only nitrogen. The gas is introduced into the processing chamber 112 at a nitrogen flow rate of approximately 500-1000 seem. The pressure in the processing chamber 112 is set at about 1.0 Torr, and the wafer temperature is set between 350-450 ° C. In another embodiment of the present invention, the gas may be a mixture of nitrogen and helium, and the ratio of nitrogen to helium is between 0.2 and 1.0. Can also be used containing nitrogen and argon (please read the precautions on the back before filling this page). The bound and bound paper is also applicable to China National Standard (CNS) A4 specification (210X297 mm) -45- Α7 Β7 Central Standard of the Ministry of Economic Affairs Du Yince, co-worker, consumer cooperation, V. Invention Description (43), Xun 'Helium or other combination of gases. During the second halogenation process, the rf source supplies rf signals to the spray head 136 and the wafer support 116. This causes the gas to form a positively charged plasma erf source 142 that can supply 300-1,500 watts of rf power at 300-400 kHz. The rf signal is generated through the matching network 145 to the spray head 136 and the wafer support 116. The spray head And the support is 180 degrees out of phase. Generally speaking, the plasma sustains for 5 seconds. The rf source 142 can alternately supply 300-1,500 watts of rf power at different frequencies below 13% MHz. Β energy power can be based on wafers of different sizes. Processing needs to be measured. For example, in the example of the first initialization, the repeated voltage from the rf source causes an excess of electrons near the wafer, which generates a negative bias voltage at the wafer 114. Wafer support 116 may require a negative bias voltage of _100 to -400 volts', typically 300 volts, and ejection head 136 may require a negative bias voltage of -loo to _400 volts, generally It is _200 volts. The processing chamber 112 is grounded, and the negative bias boundary of the wafer 114 is between 100 and 400 volts, typically _300 volts, which is maintained constant during the ion bombardment. In the second example of ion bombardment, positively charged ions from the plasma were accelerated into the surface of wafer 114 by a voltage gradient and penetrated the surface of the wafer to a depth of 100 to 110 angstroms. Neutral atomic particles with energy from the plasma can also bombard wafer 114. Once the first incubation for 15 seconds is completed, the processing chamber 112 is cleaned. When nitrogen is applied, the ion penetration depth is between 70 and 80 angstroms. When a mixture of nitrogen and helium is used, the ion penetration depth is between 100 and 125 Angstroms. Therefore, the use of a mixture of nitrogen and helium can be used for initial preparation than using only nitrogen (please read the precautions on the back before writing this page).

• 46 · V. Description of the invention (44) A7 B7 Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Zhenggong Consumer Capital Cooperative, 11 more hydrogen molecules. In order to form a diffusion barrier layer with a desired thickness, such as 150 to 300 angstroms, CVD deposition and subsequent processes can be repeated. Continuously and sequentially a plurality of barrier layers ranging from 50 to 100 angstroms are achieved until the desired film thickness is reached. When the subsequent curing process is performed in the processing chamber 110A, the processing chamber 110B,..., Or the processing chamber iioc, the deposition, the first curing, and the second curing may be performed in the same processing chamber. Therefore, deposition and subsequent toughening can be performed in situ. However, the processing steps for deposition and subsequent desulfurization need not be performed in situ and other processing chambers can be used. Table VI, shown in Figure 42, reflects the experimental results obtained by comparing the initial succession process with a single incubation process. In order to collect the data of the watch, a group of wafers were each processed according to different embodiments of the present invention. A Titanium nitride layer film having a thickness of 200 angstroms was formed on each wafer according to the present invention. The first wafer is processed according to the aforementioned single-fluorination process, and a nitrogen-hydrogen gas is used to generate a halogenated plasma. The second wafer is processed using a continuous halogenation process, and the electrorhenium gas used only contains nitrogen. The third wafer is processed using a continuous initialization process. The plasma gas used includes nitrogen and helium. The fourth wafer was processed by three consecutive halogenation processes, which sequentially used 15-second nitrogen-argon electro-fluoridation, 15-second nitrogen plasma-thinning, and 5-second nitrogen-hydrogen plasma-thinning. The second wafer, which was continuously halogenated with nitrogen, showed significantly lower power than the first wafer processed in a single halogenation step. The resistivity of the first wafer is between 450-50 (^ Q_cm, and the resistivity of the first wafer is between 570-630 / z Q-cm. Then, flute ^ ^ J Dan Kao, No. Two wafer phase slurry resistance (please read the precautions on the back first * '4 · Write this page) Binding and ordering paper size is applicable to China National Standards (CNS &gt; A4 Specification (210X297 Public Works-47- A7 B7 Printed invention note printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (45) Resistivity increased by only 7.8% after 50 hours, while the first wafer increased by u-12% 〇 The third wafer A better result can be seen, which uses a mixture of nitrogen and helium in the second plasma desulfurization step. The resistivity of the third wafer is between 440_480 and Ω-cm, which only increases by 3_7 in 50 hours. %. The third wafer also has a lower oxygen concentration. Compared to the second wafer, the third wafer has a lower oxygen concentration due to the excellent ability of the nitrogen-helium mixture to self-nitride Titanium film removes argon. The fourth wafer, which undergoes a third halogenation step using a mixture of nitrogen and hydrogen, has resistivity and resistivity aging measurements close to the first wafer. It does not appear that after the second halogenation step, the hydrogen is reintroduced into the titanium nitride layer to generate excess hydrogen. The excess hydrogen invalidates the advantages achieved by the second halogenation step. For films on wafers with improved resistivity, the following steps make the film more likely to prevent the contact window metal from diffusing below the film. In particular, the treated film is more likely to prevent the diffusion of aluminum. First, in the crystal A metal layer is formed in situ on the upper surface of the circle 114 (ie, the wafer is not removed from the processing chamber at any time during the film layer formation 2). In one embodiment of the present invention, the material deposition and subsequent Plasma annealing is performed in the processing chamber 110A to form a thin film. A material layer can be deposited on the upper surface of the wafer 114 by a thermal CVD method so that the material can conform to the upper surface of the wafer j 14. During deposition, the pressure The control unit 157 can be set to handle the house force between 0.6 to 1.2 Torr and the lamp 130 can be set. The temperature of the wafer Π4 is between 360 to 38 (TC.) (Please read the note on the back first Xiang Zai 4 · Write this page) Binding · Order-48- Ministry of Economic Affairs Printed by the Central Bureau of Standardization, Shellfish Consumer Cooperative, V. Description of Invention (46), Example t of the invention—In the embodiment, the deposited material may be another π metal nitride of the barrier layer material, such as nitrided fluorene) In the embodiments of the present invention, the ternary metal stone nitride can be used as a barrier layer material instead of the binary metal nitrogen. The thickness of the deposited material is between 50 and 200 Å. Between 50 and 100 angstroms. A Once the barrier material layer is deposited, it can be initialized by ionization. When the wafer is placed on the wafer support 116, the distance between the crystal circle 114 and the spray head 136 About 0.3 to 0.8 pairs. Preferably, the distance between the wafer 114 and the spray head is between about 0-6 and 0.7 pairs. In one embodiment of the present invention, the gas is a mixture of gas and nitrogen, wherein the ratio of nitrogen to hydrogen is 2: 3 and Introduced into the processing chamber 112 at a nitrogen flow rate of about 400 sccm _ ^ _. The pressure in the processing chamber 112 is set at about 10 Torr, and the wafer temperature is set between 300_40 (rc, preferably "较佳 七" 0 ... In another embodiment of the present invention, the gas may include a gas having a ratio of nitrogen to hydrogen between 3: 1 and 1: 2. Nitrogen, hydrogen, and argon, helium, or Other combined gases of ammonia. Then during the sulfidation process, the source 142 supplies the rf signal to the spray head 136 and the wafer support 116, causing the gas 206 to form a plasma 207 that contains positively charged ions. The rf source 142 can supply 350 watts of power through the matching network 145 at 350 kHz to generate rf signals to the spray head 136 and the wafer support 116, which are 180 degrees out of phase. Generally speaking, electricity The pulp is maintained for 10 to 30 seconds. The plasma is maintained for 20 seconds. The rf source 142 can be alternately lower than 1MHz. (CNS) A4 gauge (210 &gt; &lt; 297) C Please read the notes on the back before writing this page} Pack. • ST. -49- Printed by the Consumers' Cooperative of the Central Bureau of Standards, Liji Ministry System A7 ________B7_ V. Description of Invention (47) Supply rf power of 350 watts. Generate negative bias on wafer 114. Wafer support 116 may require a negative bias between -100 and -400 volts. Generally it is _300 volts, and the ejection head 136 may require a negative bias voltage of -100 to -400 volts, which is generally _2 volts. Ground the processing chamber 112 'and negatively bias the wafer 114. The boundary is between · ⑶❶ and · 400 volts, generally _300 volts, which is maintained constant during ion bombardment. During ion bombardment, positively charged ions from the plasma are accelerated by voltage. It penetrates the wafer surface to a depth of 50 to 200 angstroms. Energy-neutral atomic particles from plasma 207 can also bombard wafer 114. Ion bombardment reduces the thickness of the deposited layer of the barrier material by 20 to 50. %, Depending on the temperature of the substrate and the plasma processing time and energy. A barrier material layer having a degree between 50 and 100 angstroms can be repeatedly CVD deposited and annealed to form a material layer with a desired thickness. In addition, the deposition and conversion of materials on wafer 114 can be performed by many different methods. U.S. Patent Application No. 08 / 339,521, the invention name is "Improved Titanium Nitride Layer Deposited by Chemical Vapor Deposition Method and Method of Manufacture_i 'U.S. Patent Application No. 08 / 498,990, Invention Name is "Bias Plasma Biasing of Thin Films" 'U.S. Patent Application No. 08 / 567,461, the invention name is "Electrolyzing of Thin Films; Initialization", and U.S. Patent Application No. 08 / 680,913, the invention name is "Plasma bombardment of thin films", each case reveals a method of forming a barrier material layer on the upper surface of the wafer by CVD method and plasma scouring. These applications are incorporated herein by reference. The methods disclosed in these applications can be applied to the leaflets of the present invention. (Applicable to Zhongguanjiazhuan (CNS) 2 丨 Gx297 male sauce) --- (Please read the precautions on the back before you write this page) · ΤΓ -50- A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the Invention (Sin) Example _ for forming a material layer on a wafer. In the embodiment of the present invention, the wafer is placed on a device capable of performing physical vapor deposition, but a material layer is formed by a conventional sputtering method. In another embodiment of the present invention, the wafer is placed in a place where a chemical vapor deposition method can be performed, and a material layer is formed by a CVD method without additional plasma initialization. In the manufacture of integrated circuits, aluminum is usually used as the contact window metal. Because the fish liiL has affinity, it can reduce the Zhao 1 rate of aluminum in rich materials. Therefore, the material layer formed on the wafer 114 can be processed by implanting ^ into the material for an enhanced diffusion barrier layer. In order to inject oxygen into the material, the material on the wafer 114 may be oxidized in situ (i.e., the film is not removed from the processing chamber 112 after the film is formed until the oxidation is completed). Therefore, the entire processing of the material layer and oxidation of the layer can be performed in situ in a single processing chamber. Oxidation is performed so that the grain boundaries of the material are oxidized, while the grains of the material are hardly oxidized. Oxidation of the grain boundaries of the material can be achieved in situ by 110A using the semiconductor wafer processing shown in Figure 5. Once the material layer (deposition and toughening) is formed on the crystal 丨 4, the wafer Π 4 remains in the processing chamber 114. The pressure control unit 157 can set the pressure in the processing chamber 112 to be between 0.05 and 10 Torr. The temperature of the wafer 114 is set between 300 and 400, and preferably 36 cores. The material layer is exposed to an oxygen-bearing gas, such as a N2 / O2 mixture or O2. The gas is delivered to the processing chamber 112 via the spray head 136 at a flow rate between 100 and 100 sccm2. The gas 208 may contain nitrogen and oxygen and the mixing ratio of nitrogen to oxygen is 4: 1. In addition, rf source 142 supplies information paper through the matching network 145 and transfers it from applicable to Chinese standard (CNS) from the threat (Gall (install --- (Please read the precautions on the back before writing the page 4)) --51-The Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs printed A7 B7 V. Invention Note (49) to wafer support 116 and spray head 136 to convert the gas into a plasma containing positively charged oxygen ions. Rf The source 142 supplies 350 watts of rf power through a matching network 145 at 350 kHz for about 20 seconds, generating an rf signal to the spray head 136 and the wafer support 116, which are 180 degrees out of phase. As described above During the curing process, the jetting head 136, the wafer support 116, and the wafer 114 each require a negative bias. As a result, the positively charged oxygen ions accelerate toward the wafer 114 and penetrate the surface of the material layer and contact the crystals of the material. Intergranular boundary. In one embodiment of the present invention, once the oxidation is completed, the oxide layer of the material is oxidized titanium nitride. The oxidized titanium nitride can be used as an enhanced diffusion barrier layer for the contact window metal. For example, aluminum. Furthermore, when the material layer is another binary metal nitride MxNy or three When the metal silicon nitride MxSiyNz (where M can be Ti, Zr, Hf, Ta, Mo, W and other metals), an enhanced diffusion barrier layer can also be formed according to the present invention. In another embodiment of the present invention The same semiconductor wafer processing chamber 110A is used to thermally oxidize materials. The oxygen-bearing gas, such as oxygen, ozone, air, or water, is sent to the process through the spray head 136 at a flow rate between 100 and 1000 seem To 112. The lamp 130 then heats the wafer 114 to a temperature between 300 and 400 ° C, and the pressure in the processing chamber is set between 0.5 and 1000 torr and preferably 1.0 torr. As a result, the oxygen-bearing gas Oxygen in the material penetrates the surface of the barrier layer material and contacts the grain boundaries of the barrier layer material. The method of oxidizing the intergranular grains of the barrier layer material is disclosed in US Patent No. 5,378,660, issued to Ngan et al. Named "Barrier layer and aluminum contact point", this document is incorporated into this article (please read the precautions on the back before filling this page) This paper size applies to Chinese national standards (CNS &gt; A4 size (210X297 mm>- 52- A7B7 Central Standard of the Ministry of Economic Affairs Employee Consumer Cooperative Co., Ltd. printed V. Invention Description (50) for reference. Once the material layer was formed and oxidized, the wafer 114 was removed from the processing chamber 12. Although the material layer on the wafer 114 was formed and Oxidation has been explicitly described in the semiconductor wafer processing chamber shown in FIG. 5. This method is not limited to being performed in the processing chamber 110A. The method can also be performed in any semiconductor wafer processing chamber, and the processing chamber is available Performing the in-situ formation and oxidation treatment according to the present invention, for example, are described in the processing chambers of Figures 16 and 17B and 110C, respectively. Traditionally, diffusion barriers have been made thicker to provide greater protection for the diffusion of the contact window. As a result of the embodiment of the present invention, the Qi scattered barrier layer need not be made thicker to suppress the diffusion of the contact window metal. In an embodiment of the present invention, the oxidation of the material of the barrier layer reduces the diffusion rate of a contact window metal having an affinity for oxygen, such as aluminum. When such a contact window metal starts to diffuse to the oxide layer of the barrier layer material such as titanium nitride, the contact window metal is combined with oxygen ions, and the oxygen ions contact the grain boundaries of the barrier layer material. As a result, the contact window metal cannot reach the area under the diffusion barrier layer. The table in Fig. 43 (a) shows the chemical composition at different depths of the wafer without oxidation after a barrier material layer has been deposited and plasma-formed according to the present invention. Figure 43 (b) includes a chart showing the chemical composition at different depths of the wafer after the barrier material layer is deposited, slurryed, and oxidized according to the present invention. The data shown in each graph are taken from the crystals of the Shixi substrate with a titanium nitride barrier layer. The crystals are detected by Ogge electronic money. Each graph shows the wafers at different depths in the wafer. Different chemical atom concentrations. Electricity meter comparison (Please read the precautions on the back before writing this page 4). &Gt; • 11 This paper is from Shicai Guanjia County (CNS) 7 210 ^ \ • 53- In the two graphs, the oxygen concentration on the top of the wafer composed of the barrier material in the oxidation barrier material (43_) is significantly higher than that in the non-oxidized material. The barrier layer material contains oxygen, and, for example, the contact window metal and the oxygen in the barrier layer combine to significantly reduce the diffusivity. Therefore, the material of the oxidation barrier layer (43 (_) is superior to the material of the oxygen-free barrier layer, and can provide a better diffusion barrier layer between the contact window metal such as aluminum and the underlying silicon substrate. Further, by Film of a diffusion barrier layer formed by an embodiment of the present invention: resistance does not unacceptably compromise with oxidation. Figure 44 shows a table illustrating this fact. As shown in the table, deposition and plasma halide according to the invention However, a 200 Angstrom titanium nitride barrier layer without oxide thickness can have a thin film resistance of 400Q / sq and the standard deviation of the uniformity of the thin film resistance is 2.2%. The resistivity obtained by such a barrier layer material It is 820 in Ω-cm. According to the present invention, a 200 Å thick titanium nitride barrier layer material has a thin film resistance of only 630 Ω / sq. And a thin film resistance of 20 seconds after deposition, plasma annealing, and oxidation. The standard deviation of uniformity is 3 7%. The obtained resistivity is 1260 // Ω-cm. The table in Fig. 44 also shows the sheet resistance of the titanium nitride barrier layer with a thickness of 300 angstroms. After the invention is deposited and the resistance is initialized, a 300 Angstrom titanium nitride film can have a film resistance of 235 Ω / sq · The standard deviation of the properties is 2.0%. After depositing, plasma quenching and nitriding according to the present invention for 20 seconds, a titanium nitride film with a thickness of 300 angstroms can have a film resistance of 25Q / sq and a standard of film resistance uniformity. The difference is 2_7%. Therefore, the resistivity of a barrier layer material with a thickness of 300 angstroms without oxidation is 70.5 / z Ω_cm, and the resistivity of a barrier layer material with a thickness of 300 angstroms is only 75 volts Q_cm . Printed by A7, Shellfish Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs ---------__ B7 V. Description of the invention (: 7 —- — The relative effectiveness of the oxide layer of titanium nitride is shown in the table in Figure 44, Assessed in the manner described above: A 1000 Å thick layer was deposited on a wafer containing an oxide-free or oxidized titanium nitride barrier layer on the upper surface. After being deposited on the sun, it was placed in a furnace at 55 ° C. Initialized for 1 hour. Wafers with non-oxidized titanium nitride barrier material of 200 angstroms to 300 angstroms showed serious defects, which were caused by aluminum diffusion into the wafer substrate. Wafers having a barrier material of a thickness of between 200 angstroms and 300 angstroms after the deposition, plasma initiation, and oxygen oxidation oxidation according to the present invention, There are only minor or no defects derived from the diffusion of aluminum. The data in Figures 43 (a), 43 (b), and 44 are only a set of results that can be achieved by the winter embodiment of the present invention. The results described in these figures The limiting embodiment that achieves the same or substantially the same result in the invention cannot be explained in any way. Rich in silicon to reduce false f, In another embodiment of the present invention, the silicon filling step is used instead of the oxidation step. The silicon packing step reduces the diffusivity of a contact window metal such as copper in a material layer t such as titanium nitride, which is located on a substrate. The bonding ability of silicon and nitrogen filled in the grain boundaries of the deposited titanium nitride film is promoted Mechanism of barrier properties of titanium nitride. According to the present invention, deposition and annealing of a material such as titanium nitride on a wafer is performed in the same manner as the method including oxidation described above. Preferably, a titanium nitride layer is deposited to a thickness of 100 angstroms. The thickness of the titanium nitride layer was about 50 angstroms after the material was halogenated with a plasma containing a mixture of nitrogen and hydrogen. The deposition and amination of the titanium nitride material can be performed in any one of the processing chambers IOOA, 丨 丨, or 110C. Can alternately use another processing room or this paper size is applicable to China National Standard (CNS) A4 (210X297mm) (Please read the precautions on the back before writing this page)

-55- Printing by the Central Bureau of Standards, Ministry of Economic Affairs, Consumer Cooperatives A7 B7 V. Description of Invention (53) Another group of processing chambers performs the deposition and chemical conversion steps. If the processing chamber 110A, 110B, or 110C is used, the silicon packing can be performed in the same processing chamber as that used for deposition and tritiation. As a result, the entire silicon packing process can be performed in situ. After deposition and tritiation, cutting and filling are performed by exposing the tritiated titanium nitride to silane (SiH4). Make Shi Xiyao flow into the place at a rate of 30 seem —---------........ The treatment room 110A lasts about 30 seconds. During the silane exposure, the pressure in the processing chamber was set to 1.2 Torr; the wafer support 116 was heated to 420 ° C, and the nitrogen flowed into 110A at a rate of 140. Purge with argon at 200 seem. After exposure to the silane, the remaining purge is purged out of the processing chamber 110 and the conveyor line by thorough cleaning. During the exposure, the silicon and titanium nitride surfaces combine to fill the grain boundaries of the deposited material. Packed silicon will hinder the diffusion of contact window metals, such as copper, that are deposited later. The steps of depositing, halogenating, and silicon-filling the titanium nitride material can be repeated in sequence until the film is constructed to a desired thickness. When constructing a 200 angstrom thin film, the titanium nitride deposition, tritium, and exposure are preferably performed a total of three times, each time depositing a 100 angstrom titanium nitride layer. As a result, the thickness of the silicon nitride-filled titanium nitride film was 150 angstroms. In order to achieve an ideal thickness of 200 Angstroms, a final titanium nitride capping layer with a thickness of 100 Angstroms was deposited and hardened to a thickness of 50 Angstroms. The capping layer of titanium nitride can be halogenated using a plasma containing nitrogen and hydrogen as described above. The final deposited and tritiated cap material was not exposed to the silane. The last part of the deposited and tritiated material was not exposed to silane because silane has an affinity for oxygen. If silicon is introduced into the final surface capping layer of the titanium nitride film through exposure to silane, the resistivity of the film will become too high (please read the precautions on the back before writing this page). Ιτ This paper Standards are applicable to China National Standard (CNS) A4 specifications (210X297 cm) -56- V. Description of Invention (54) Accepted. After the film was covered with an initialized titanium tetraoxide layer, the resistivity of the film was about 520 A Q-cm. If the titanium nitride cap layer is exposed to silane, the resistivity of the film may be very high. The Rutherford reverse-scattering spectrum shows that the silicon-packed film according to the present invention has the following changes: the Si content is 5 atomic percent, the Ti content is 35 2 atomic percent, the N content is 52.8 atomic percent, and the H content is 7 atomic percent. The Auger depth map of the film formed according to the present invention is shown in Fig. M. The Auger depth change chart shows that the uniform nitrogen and thorium content and the oscillating rock content are in line with the silicon-containing material covered by titanium nitride with a thickness of 150 Angstroms. It should be noted that how the above measurements and steps are taken Non-limiting example of silicon stuffing in accordance with the present invention. In another embodiment of the present invention, the steps of halogenating the material layer deposited on the substrate and exposing the material to silane are interchangeable. As a result, the deposited material, such as Nitride, was first exposed to me for the purpose of dream packing, and then the plasma resistivity was reduced using plasma purity. Furthermore, other non-chemical vapor deposition methods, such as sputtering, can also be applied. Printed by the Central Government Bureau of the Ministry of Economic Affairs and Consumer Cooperatives, ternary metal silicon nitride materials, such as antimony silicon carbonitride (TiSiCN), which can be used as a substitute for silicon stuffing, can be deposited instead of titanium nitride materials. The deposited silicon-rich material is then tritiated to reduce its resistivity. As described above, the deposition and chemical conversion can be repeated to form a thin film having a desired thickness. According to this embodiment of the invention, the wafer is placed in a processing chamber where a deposition process can be performed. The processing chamber may be a processing chamber 11A, uB, or 11c, which can be used to construct a silicon-rich film in situ. This paper can be applied alternately to another processing room. This paper can be printed from China County (CNS) Congxiu (2 敝 297 Central Government Bureau of Ministry of Public Affairs, Consumer Work Cooperatives, printed A7, B7, 5. Description of invention (55) or another set of processing The step of forming a silicon-rich film described above is performed in a chamber. Once the wafer is placed in the processing chamber, an antimony silicon carbonitride (TiSiCN) material is deposited on the wafer. The deposition can be performed using the conventional thermal CVD method using TDMAT. In order to introduce silicon, a certain volume of silane is allowed to flow into the processing chamber. An equal volume of nitrogen diluent is temporarily retained for comparison with the volume used when depositing titanium nitride using TDMAT CVD. During the deposition, the processing chamber pressure is set at 1.2 Torr; Wafer holder temperature was set at 420 ° C, and silane, He / TDMAT, and nitrogen diluent were flowed into the processing chamber at flow rates of 10 seem, 70 seem, and 90 seem, respectively. Argon was performed at a rate of 200 seem Cleaning. Deposition can be carried out for 32 seconds to form a material layer with a thickness of 100 angstroms. In the chemical vapor deposition of titanium nitride, Shi Xiyao is not used and the nitrogen flow rate is 100 seem. After the deposition, the electricity using nitrogen and hydrogen is used. Ti SiCN tritium. Tritium includes an initial 20-second ion bombardment when the initial thickness of the deposited material is 100, and the thickness of the desired material layer is 50 angstroms. The deposition and tritium can be continuously repeated for construction. The thickness of the thin film. In one embodiment of the present invention, the desired thickness is 200 angstroms. A 100 angstrom TiSiCN layer is deposited and then hardened into a 50 angstrom material layer. A total of 4 angstroms of 100 angstrom material layers In order to obtain the desired thickness of 200 angstroms, in one example, Rutherford reverse-scattering spectroscopy shows that the 200 angstroms thick film contains 15 atomic percent silicon, 25.3 percent molecular Ti. 49.7 atomic percentage of N, and 10 atomic percent of plutonium. The Auger depth change diagram of the film is shown in Figure 46. The Auger depth change diagram shows about (Please read the precautions on the back before writing 4-page) 袈The paper size of the edition is applicable to China National Standard for Ladder (CNS) A4 (210X297 mm) -58- Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 ^ --- ^ B7 V. Description of the invention (56 ^ '- -~ — As low as 5 atomic percent The amount of oxygen and the amount of low oxygen of about 70% of the percentage are equal. The resistivity of the film is 2,40 () / ζ Ω. Figure 47 shows the thickness of the 200 Angstrom film and Comparison of the resistivity and composition of a 200 Å-thick thin plutonium layer formed by depositing antimonite and soil nitride. The loss of high resistivity can be exchanged to obtain a film containing a large amount of silicon as a diffusion barrier. As for the barrier layer, the resistivity is more acceptable. It can reduce the amount of Shi Xixuan used in the deposition step to reduce the resistivity of the thin film. As mentioned above, by filling the silicon into the material layer after deposition and initialization, the maximum can be achieved. Good resistivity. However, the strength of the diffusion barrier layer filled with Shixi is not sufficient as a thin film constructed by depositing Shixi-containing dead material to hinder the diffusion of copper. For example, silicon-packed binary metal nitrides, such as titanium nitride, and monometallic silicon nitrides, such as TiSiCN, cannot avoid copper diffusion. Manufacturers of integrated circuits can choose the method of strengthening the slab, which can meet the manufacturer's needs when constructing thin films. It should also be noted that the deposition method used in each of the above silicon strengthening methods can be changed by applying other deposition methods, such as sputtering, instead of chemical vapor deposition. In the embodiment of the present invention, a ternary metal silicon nitride other than TiSiCN can also be used. Furthermore, the above-mentioned initializing step is not limited to the use of an electric mass consisting only of nitrogen and hydrogen. Other plasma compositions that reduce the resistivity of the deposited material can also be used. An example of such a plasma is the above-mentioned plasma containing nitrogen, hydrogen, and argon. Continuous toughening steps can also be applied. In the method including packing silicon by exposure to silicon, the exposure step is not limited to thermal activation. Common Chinese National Standards (CNS) A4 specifications Γ ^ · 297 mm as far as possible paper size (Please read the precautions on the back before writing this page) Binding. Order -59- Printed by the Central Consumers Bureau of the Ministry of Economic Affairs and Consumer Cooperatives A7 B7 V. Description of the invention (57) In another embodiment of the present invention, a silicon-rich gas can be generated by an rf signal to generate a plasma containing silicon ions. Wafers containing silicon-filled material can also be biased to increase the bombardment of the material by silicon. When plasma is used for silicon packing, silicon packing can also be performed before or after the halogenation step to reduce its resistivity. C. Processor-controlled thin film construction The above-mentioned steps that can be performed in the processing chamber to deposit, tritiate, oxidize, and stuff silicon can be controlled by a processor-based control unit. Fig. 48 shows a control unit 600 having this capability for application. The control unit includes a processor unit 605, a memory 610, a mass storage device 620, an input control unit 670, and a display unit 650, all of which are connected to a control unit bus 625. The processor unit 605 may be a microprocessor or other precision structure with the ability to execute instructions stored in memory. The memory 610 may be a hard disk drive, a random access memory ("RAM"), a read-only memory ("ROM"), a combination of RAM and ROM, or other memories. The memory 610 contains instructions for execution by the processor unit 605 to facilitate the implementation of the above method steps. The instructions in the memory 610 may be in the form of code. The code can conform to any of many different programming languages. For example, the code can be written in C +, C ++, BASIC, Pascal, or many other languages. The mass storage device 620 stores data and instructions and retrieves the data and instructions from a storage medium readable by the processor, such as a magnetic disk or magnetic tape. For example, the mass storage device 620 may be a hard disk drive, a floppy disk drive, a tape drive, or an optical disk drive. The mass storage device 620 stores and retrieves instructions corresponding to the commands received from the processor unit 605. Storage by mass storage device 620 (Please read the precautions on the back before writing this page) 袈.

.1T This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) -60- A7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs B7 V. Invention Description (58) and inspection data and instructions are processed by the processor The unit 605 is used to perform the above method steps. Data and instructions are first retrieved from the media by the mass storage device 620 and then transferred to the memory 610 for use by the processor unit 605. The display unit 650, under the control of the processor unit 605, provides information to the operator of the processing room in a graphic display and alphanumeric manner. The input control unit 670 is connected to a data input device, such as a keyboard, a mouse, or a light pen, to the control unit 600 for receiving input information from an operator of the processing room. The control unit bus 625 is a transmitter of data and control signals between all devices connected to the control unit bus 625. Although the control unit bus is shown as a single bus, it can be directly connected to the devices in the control unit 600, and the control unit bus 625 may be a collection of buses. For example, the display unit 650, the input control unit 670, and the mass storage device 620 can be connected to the input-output peripheral bus, while the processor unit 605 and the memory 610 are connected to the positioning processor bus. The positioning processor line bus and the input-output peripheral bus can be connected together to form a control unit bus 625. The control unit 600 is connected to a processing chamber element applied to form a thin film on a substrate. Each component can be connected to the control unit bus 625 to enhance the transmission between the control unit 600 and the components. These elements include a gas shield 52 of the processing chamber, heating elements such as a lamp 130, a pressure control unit 157, an rf source or energy source 62, 142, 143, 144, and a temperature measuring device 140. In one embodiment of the present invention, the control unit 600 is referred to as a gas screen controller 50 in the processing chambers 110A, 110B, and 110C. The control unit 600 supplies a signal to the component, so that the component performs the above-mentioned process steps of deposition, chemical conversion, oxidation, and silicon filling material on the substrate. Please read the precautions on the back before filling. Applicable to China National Standard (CNS) A4 specification (210X297mm) -61 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (59). The control unit 600 also receives signals from these components to decide how to control the execution of the aforementioned process steps. For example, the control unit 600 receives a signal from the temperature measuring device 140 to determine the capacity of the lamp 130 to be supplied to the processing chamber. Figure 49 illustrates a series of process steps that can be performed by the processor unit 605 in response to the code instructions retrieved from the memory 610. When a thin film is initially formed on the substrate, a deposition step 700 is performed. In the sinking step 700, the processor unit 605 executes an instruction to retrieve from the memory 610. Execution of these instructions causes the components of the processing chamber to be manipulated in order to deposit a layer of material on a substrate. For example, the processor unit 605, in response to the retrieved instruction, causes the gas screen in the processing chamber to supply precursor gas in the processing chamber, causes the lamp 130 to heat the processing chamber, and causes the pressure control unit 157 to set the pressure in the processing chamber. Once the deposition step 700 is completed, the instruction retrieved from the memory 610 instructs the processor unit 605 to cause the components of the processing chamber to perform the step 701, such as one of the aforementioned steps. Tritiation may include plasma tritiation using a mixture of nitrogen, nitrogen, and hydrogen or a mixture of nitrogen, hydrogen, and other gases such as argon. In addition, the dithering step 701 can perform continuous dithering as described above. After completion of the halogenation step 701, an oxidation decision step 702 is performed, in which the control unit 600 determines whether to perform an oxidation process step. If the oxidation is not performed, the instruction retrieved from the memory 610 instructs step 703 to enable the processor unit 605 to decide whether to perform silicon stuffing. If silicon packing is not performed, the control unit 600 decides not to perform another deposition in step 706. The deposition step is performed unless the thickness of the deposited material is approximately equal to the desired film thickness. If the required film thickness has been reached, the process of constructing a film on a substrate is completed. U --------- ^ 袈 ------ Order ------ f (Please read the notes on the back first and then write this page) This paper uses the Chinese national standard ( CNS) M specifications (2 〖0X297mm） -62- A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (60) Otherwise, a new deposition step 700 is performed. If it is decided to perform oxidation in the oxidation decision step 702, the processor unit 605 then executes the oxidation step 704. In the oxidation step 704, the retrieved instruction causes the processor unit 605 to instruct the components of the processing chamber to perform the operations necessary for the above-mentioned oxidative deposition of the material. Oxidation can be plasma-based or thermal-based. After completing the oxidation step 704, the processor unit 605 decides whether to proceed in step 706-a new deposition step 700. If it is decided in step 703 to implement silicon stuffing, the processor unit 605 then executes a silicon stuffing step 705. The processor unit 605 retrieves and executes the silicon stuffing instructions in the memory altar. In response to these instructions, the processor unit 605 causes the components in the processing chamber to operate in a manner that performs the silicon packing steps described above. Silica packing can be achieved by exposing the deposition material to a silane gas, which is thermally injected with energy. In addition, silicon packing can be achieved by exposing the deposition material to an environment containing silicon ions, which are generated using an rf signal to generate a plasma. After the silicon filling step 705 is completed, the deposition step 700 is repeated. Figure 50 illustrates another sequence of process steps that can be performed by the processor unit 605, which responds to code instructions retrieved from the memory 610. The process step sequence includes the same steps as in FIG. 49. However, the order of the steps is changed for the silicon stuffing step 705 in the halogenation step 701. After the deposition step 700 is performed, the processor unit 605 immediately executes the instruction of step 703 to decide whether to perform silicon stuffing. To perform silicon stuffing, a silicon stuffing step 705 is performed followed by a halogenation step 701. Otherwise, a step 701 is performed. After the halogenation step 701, the processor unit 605 decides in step 702 whether to perform the oxidation step. If you want to carry out oxidation, please read the precautions of ir before binding. The paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) -63- A7 B7 V. Description of invention (61) Oxidation Step 704. Otherwise, in step and ⑽ decide whether to perform a new deposition. -Once the oxidation step 706 is completed, a decision is also made in the step writing. If new deposition is required, perform deposition step 7). Otherwise, complete the thin mold construction process. "Although the present invention has been described by specific exemplary embodiments, it should be understood that the present invention can be familiarized with within The technicians make different improvements and changes. (Please read the notes on the back before filling out this page.) 袈. Order printed on the paper of the Central Consumers ’Bureau of the Ministry of Economic Affairs. A4 specifications (210X297 mm) -64- A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (62) Component symbol comparison A ... processing room 62 ... rf source B ... processing room 63 ... matching network C ... deposition processing chamber 70 ... transformer D ... processing chamber 72 ... capacitor 10 ... CVD processing chamber 74 ... capacitor 12 ... processing chamber 78 ... tap 14 ... wafer 80 ... inductor 16 ... support 82 ... inductance | § 18_ &quot; disk 83 ... choke 20 ... free end 8 4 ... Flow coil 22 ... support arm 100 ... diffusive barrier layer 24 ... fixed end 101 ... silicon substrate 26 ... rod 102 ... contact window plug or metal 28, · .Displacement mechanism 103 ... Contact hole 30 ... Infrared lamp 104. ·· Material 32 ... Quartz window 105 ... Conductive area 34 .. · Hole 106 ... Hole 38 ... Thermocouple 110 A ... Wafer processing chamber 40 ... Temperature measurement device 110B ... Wafer processing chamber 42 ... Conductor 110C ... Wafer processing chamber 50 ... Gas screen controller 112 ... Processing chamber 52. .Gas screen 114 ... wafer binding This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 × 297 mm) Please read the precautions on the back Λ before writing this page-65- V. Description of Invention (63) A7 B7 Printed by the Consumers' Cooperative of the Central Economic and Technical Bureau of the Ministry of Economic Affairs 116 ... support 159 ... divider 118 ... support plate 160 ... divider, groove 119 ... quartz plate 162 ... fastener 120 ... free end 164 ... groove 122 ... support arm 166 ... short bar 124 ... fixed end 16 8 ... bolt 126 ... rod 170: ... section 128 ... displacement Mechanism 172 ... hole 130 ... light 174 ... spring washer 132 ... quartz window 180 ... conductive bar 136 ... jet head 182 ... insulator 140 ... temperature measuring device 184 ... insulator 142 &quot; .rf source 18 6 ... fastener 143 ... rf source 188 .. .Slot 144 ._. Rf Source 192 ... Structure 145 ... Matching network 194 ... Matching 146 ... Matching network 196 ... Expanding section 147 ... Matching network 198 ... Expanding section 150 ... quartz shield 200 ... channel 152 ... thermocouple 202 ... upper surface 154 ... sheath 204 ... dividing element 156 ... cable 206 ... expanded 157 ... pressure control unit 207 ... electrical Slurry 158 ... small nickel ball 208 ... gas l · --------- ί ^ ------ IT ------- Γ.) (Please read the precautions on the back first (4, write this page again) The paper size is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) -66- Duty Printing and Co-operation A7 B7 by the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the Invention (64) 210 ... Flange 620 ..... Mass storage device 212 ... Bolt 625 ... Control unit bus 214 ... Spring washer 650 ... Display unit 216 ... Corrugated tube 670 ... Input control unit 220 ... non-conductive tube 700 ... deposition step 222 ... rf conductive tube 701 ... decidation step 224 ... flange. 702: .. oxidation decision step 226 ... conductive hoop 703 ... step 600 ... control Unit 704 ... Oxidation step 605 ... Processor unit 705 ... Silicon stuffing step 610 ... Memory 706 ... Step l · -------- 「---------- ΐτ ---- 1--f (Please read the precautions on the back before writing this page) This paper Applicable to China National Standard (CNS) A4 specification (210X297 mm)

Claims (1)

A8 Λ λ printed by the Shelley Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs: S then "___ D8 VI. Patent application scope 'This code can control a processing chamber when constructing a thin film on a semiconductor wafer, where the processing chamber contains gas艎 screen, heating element, pressure control unit and rf signal source, the code includes: a first code, the first code instructs the processor to provide a signal to the gas ballast screen, the heating device and the pressure control unit so that The material layer is concentrated on the wafer in the processing chamber, where the gas mask is instructed to provide a precursor gas for depositing a ternary metal nitride; and a second code, the second code indicates a signal to the processor ^ for the signal To the gas shield, the heating device, the pressure control unit, and the rfm source to plasmatify the material layer β 55. For example, the storage medium of the scope of application for patent No. 54, wherein the ternary metal stone gaseous substance contains at least A material selected from titanium, group, crane and knot. This paper M is suitable for China National Kneading Car (CNS) Ya 4 Wuji (21 () &gt; &lt; 297) and (please read the precautions on the back before filling this page) A8 Bg C8 D8 The scope of the patent application is the work-consumption cooperation of the Central Bureau of Quasi-Ministry of the Ministry of Interest, Social Printing 11. A method for constructing a thin film on a semiconductor wafer, the method includes the following steps: (a) depositing a material layer on the wafer; (b) after step (a), the material layer is plasma-moltened so as to reduce the resistivity of the material layer, wherein the step (b) includes the following steps: performing the first plasma-moltenization of the material layer; After the first plasma toughening, the second plasma hardening of the material layer is performed. 2. The method of claim 1, wherein the step of performing the first electropolymerization comprises the steps of: exposing the material layer to a first environment containing ions; and electrically biasing the material layer to cause Ions strike the material layer from the -environment. 3. As in the method of applying for the second item of the patent scope, the steps of "A" and "A" to perform the second plasma plasmaization include the following steps: 'expose the material layer to a second environment containing ions; and The material layer ^ biases the material layer to cause ions from the second environment to the material. 4. The method of claim 3 in the scope of the patent application, wherein the step of the material including the ion-environment step includes the following steps:-providing the A gas, and the supply of energy to the-gas to generate the first, .... The material layer is exposed to a second environment including the following steps and steps including the following steps ... Paper steps t Applicable national standards (CNS) (Please read the notes on the back before filling this page) -Λ &quot; &quot; · 68-A8 B8 CS D8 The scope of the patent application provides a second gas, and supplies energy to the second gas to generate a second plasma. 5. The method of claim 4 in the scope of patent application, wherein: Step: The step of supplying energy to the first gas includes the following secondary steps of providing a first rf signal to the first located on the first side of the wafer An electrode, and a second electrode for providing a second rf signal to the second side of the wafer, and the step of providing energy to the second gas includes the following secondary steps: ^ For the second rfgfl signal to be located at The first electrode on the first side of the wafer and a fourth RF signal provided to the second electrode on the second side of the wafer are printed by the Central Standards Bureau of the Ministry of Economic Affairs, Zhengong Consumer Cooperatives. The method of 5 items, wherein the first "signal" is approximately 180 degrees out of phase with the second rf signal and the third rf signal is approximately 180 degrees out of phase with the fourth rf signal. Wherein the first gas includes at least one gas selected from the group consisting of nitrogen, hydrogen, argon, helium, and ammonia. 8. If the method of claim 4 is applied, the second gas includes at least one gas selected from the group consisting of nitrogen, Gases of helium, neon and argon. The method of item 丨, wherein step (a) is performed using chemical oxygen phase deposition method for β sheet paper size in use ® National Standard (CNS) Α4 size (210x297 mm) (Please read the precautions on the back first (Fill in this page again) -69- Beijin Consumer Products Co., Ltd., Central Bureau of Standards and Technology of the Ministry of Economic Affairs and Economics »· Cooperative Seal Bag A8 B8 CS D8 Patent Application Scope 10. If the scope of patent application is the first! The method of claim, wherein the material layer is a binary metal nitride. 11. For the method of applying for the scope of patent application, the further steps include the following steps: (0 Repeat this step (a) and step (b). U. For the method of applying for scope of patent application Among them, the step (a) and the step ⑻ can be performed in the same processing chamber 'without the need to move the wafer out of the processing chamber between the initial step ⑻ and the completion step (b). 13- Constructing a thin film on a semiconductor wafer The method comprises the following steps: (a) depositing a material layer on the wafer; and (b) initializing the material layer by plasma after step (a) so as to reduce the resistivity of the material layer; And (&lt; 0 exposing the material layer to a silicon-containing gas; and (d) heating the material layer so that silicon reacts with the material layer. For example, the method of claim 13 of the patent scope, wherein the steps (c) and Step (d) is performed after step (b). 15. The method according to the scope of patent application (i), wherein step (d) and step (d) are performed after step (a) and before step (b). The method of applying for item No. 13 in the scope of patent of * 3, wherein the gas containing Shixi is Shixiyan. 17. If applying for a patent The method around item 13 includes the following steps: ⑷ Repeat this step (a), this step is called (b), this step, and the CNS 8.4 shape (210X297 mm) L-(Please read the notes on the back before filling out this page) Order: -70- A8 B8 CS D8 Ministry of Economic Affairs t Central Operations Bureau Shellfish Consumer Cooperative Printing + Printing Patent Scope Step (d). I8 · The method of claim 13 further comprises the following steps: (e) depositing a capping layer of the material on the material layer after steps (a), (b) '⑷ and (d); and (f) Make the cover of the material trivial. I9. The method of item 13 of the patent application, wherein the steps (a), (b), (c) and (d) are all processed in the same way. It does not need to remove the wafer from the processing chamber between the beginning step (a) and the completion step (d). 20. The method according to item U of the patent application scope, wherein the material layer is deposited by chemical vapor deposition 1. The method as claimed in item 20 of the patent scope, wherein the material layer is a binary metal nitride. 22. The method as claimed in item 21 of the patent scope Method, wherein the binary metal nitride comprises at least one material selected from the group consisting of titanium, button, tungsten, and tungsten. 23_As in the method of claim 20 of the patent application 'wherein the step (&amp;), step (b), Step (c) and step (d) are performed in the same processing chamber, and there is no need to move the wafer out of the processing chamber between the beginning step (a) and the completion step (d). 24. A method of constructing a thin film on a semiconductor wafer The method comprises the following steps: (a) depositing a material layer on the wafer; and (b) initializing the material layer by plasma after step (a) so as to reduce the resistivity of the material layer; And (c) exposing the material layer to an environment containing fragmented ions. ) A4ft ^ (210X297 ^) ~-* — --------- Α clothing-(Please read the precautions on the back before filling out this page), * τ. -71-25 · If the scope of patent application Step 24: A method, which further includes the following steps: 2 = a partial material layer and a sub-environment, 26: a method of constructing a thin film on a semiconducting touch, the method including the following steps) depositing a material layer on the On the wafer; and after the step (i), the material layer is initialized so that the resistivity of the layer can be reduced, and the material is a ternary metal sulfide. == The method of item 26, wherein the ternary metal coinpeptide contains at least-materials selected from the group consisting of Qin, He, and He. 28. A method of constructing a thin film on a semiconductor wafer, the method comprising the following steps: (a) placing the wafer in a processing chamber; (b) depositing a material layer on the wafer in the if chamber And (0) when the wafer is in the processing chamber, the material layer is plasma-initialized after step (b), wherein the step ⑷ includes the following steps: exposing the material layer to In the environment. Electrically bias the material layer to cause ions to bombard the material layer from the first environment; 9 to stop exposing the material layer to the first ion-containing environment-to stop exposing the material layer to the ion-containing material First environment After applying for a patent application, the material layer is exposed to a second environment containing ions; and 1 The printed material is electrically biased by the Central Government Bureau of the Ministry of Economic Affairs, Shellfisher Consumer Cooperative, to cause ions from the second environment to the Material layer bombarded. 29. The method of claim 28, wherein the step of exposing the material layer to a first environment containing ions includes the steps of: providing a first gas, and supplying energy to the first gas to generate a first electricity The plasma, and the step in which the material layer is exposed to a second environment containing ions, includes the steps of: providing a second gas, and supplying energy to the second gas to generate a second plasma. 30. The method of claim 29, wherein the second gas comprises at least one gas selected from the group consisting of nitrogen, helium, neon, and argon. 31. The method according to item 28 of the patent application, wherein this step is said to be performed by chemical vapor deposition. 32. A method of constructing a thin film on a semiconductor wafer, the method comprising the following steps: (a) placing the wafer in a processing chamber; (b) depositing a material layer on the wafer in the processing chamber ; (C) when the wafer is located in the processing chamber, the material layer is plasma-pulverized after step (b); (d) when the wafer is located in the processing chamber, generated after step (c) «Fk— · tn —im ϋ —ί ^^^ 1 n (Please read the precautions on the reverse side before filling out this page) 73-73- ABCD Order of the Ministry of Interest and Economic Affairs of the Central Government Procurement Bureau,“ Machinery Consumer Cooperatives ’Printing” Application The patent scope includes an oxygen ion plasma; and (e) when the wafer is in the processing chamber, the material layer is electrically biased to cause oxygen ions to bombard the material layer. 33. The method of claim 32, wherein the step ⑷ includes the following steps: providing a -rf signal to the first electrode on the first side of the wafer. For example, the method of claim 33 is claimed, wherein the first electrode is a wafer support. A The method according to item 34 of the patent application scope, wherein the step ⑷ includes the following steps: providing a second rf signal to a second electrode located on the second side of the wafer. 36. The method of claim 35, wherein the second electrode jetting head support. A If you apply for 36 materials, the "round support" is a crystal seat. 38. A method of constructing a thin film on a semiconductor wafer, the steps are described as follows: (a) the wafer is placed in a processing chamber; (b) ordering a material layer to be deposited on the wafer in the processing chamber; when the wafer is located in the processing chamber, the material layer is chemically converted after step (i) when the wafer is located in the processing chamber A , This material layer paper is applicable to China National Slope (CNS) (210X297 mm) This method includes the following (please read the precautions on the back before filling this page) -74- The scope of the patent application is in a silicon-containing gas; and (e) when the wafer is pulled in the processing chamber, 4, to mid, the material layer is heated to react the silicon with the material layer. 39. The method of claim 38 in the scope of patent application, wherein the gas containing stone ash is broken up. 40. The method of claim 38 in the scope of patent application, which further includes the following steps (repeat this step), step ⑷, Step ⑷ and Step ⑷ 41. If the method of the scope of application for the patent No. 38, step: It further includes the following steps printed by the Ministry of Economic Affairs, China Bureau of Associate Bureau of Male Workers Consumer Cooperatives * ⑴ After step (e) A capping layer of the material is deposited on the material layer; and (g) the capping layer of the material is tritiated. 42 · —A method for constructing a thin film on a semiconductor wafer, the method comprising the following steps: (a) placing a wafer in a processing chamber; 沉积 depositing a material layer on the wafer in the processing chamber; ( c) when the circular position is in the processing chamber, the plasma layer is initialized after step (b); and (d) when the wafer is positioned in the processing chamber, the material layer is exposed to In the environment of silicon ions. . If the method of applying for patent No. 42 is ’, its further steps include the following steps: (Please read the notes on the back before filling this page) -75- A8 B8 C8 D8 6. Scope of patent application Printed by the Central Government Bureau of the Ministry of Economic Affairs, Shelley Consumer Cooperative (e) When the wafer is buried in the processing ground, the material layer is electrically biased so that silicon ions bombard the material layer. From the method as claimed in item 43 of the patent application, its further steps include the following steps: () After step (e), deposit a cover layer of the material on the material layer; and (g) make the cover of the material Layer toughened. 45_- A method of constructing a semiconductor on 0 yen, the method includes the following steps: (a) placing a wafer in a processing chamber; 将 a ternary metal stone gaseous material layer in the processing chamber Deposited on the wafer; (i) when the wafer is in the processing chamber, the material layer is electrically assembled after the step; and () when the wafer is in the processing chamber, the material layer Exposure to an environment containing silicon ions. 46. The method of claim 45, wherein the ternary metal stone nitride comprises at least one material selected from the group consisting of titanium, buttons, tungsten, and files. 47.-species A processor-readable storage medium, the medium is filled with a program code, which can control a process to build a film on a semiconductor wafer, wherein the process chamber includes a gas screen, a heating element, a pressure control unit, and rf signal source, the code contains: the first code, the first code instructs the processor to provide signals to the gas screen, the heating device and the pressure control unit to make the material (please read the precautions on the back before reading (Fill in the wooden pages) -76- A8 B8 C8 printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ^^ ------ D8 A. The patent application layer is deposited on the wafer in the processing chamber; The second code 'The second The code instructs the processor to provide a signal to the gas screen, the heating device, the pressure control unit, and the "signal source, so as to plasma-harden the material layer in the first time; the second code 'the second code Instruct the processor to provide a signal to the gas screen, the heating device, the pressure control unit and the rfm source in order to plasma-harden the material layer in the second time. The read storage medium, wherein the second code indicates the processor so that the gas screen provides at least one gas selected from nitrogen, hydrogen, argon, helium, and ammonia, and wherein the third code indicates the processor So that the gas screen provides at least one gas selected from the group consisting of nitrogen, helium, neon and argon "49. A processor-readable storage medium, the medium is filled with a code 'the code is on a semiconductor wafer Controllable when constructing film Processing room, wherein the processing room includes a gas screen, a heating element, a pressure control unit, and an RF signal source, and the code includes: a first code 'the first code instructs the processor to provide a signal to the gas screen, the heating device And the pressure control unit so that the material layer is deposited on the crystal garden in the processing chamber; a second code, the second code instructs the processor to provide a signal to the gas screen, the heating device, the pressure control unit and the rf signal Source so as to plasma-enhance the material layer; the third code 'the third code instructs the processor to provide signals to the gas screen, the heating device, the pressure control unit, and the RF signal paper size (using the Chinese country) Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page) E-booking 77- A8 B8 C8 D8 Patent application scope number source in order to oxidize the material layer. The storage medium readable by the processor of item 49, wherein the second code instructs the processor so that the RF signal source provides a first signal to the first side of the wafer The first electrode and the second electrode providing the first signal on the second side of the wafer. 51. If the storage medium can be read by the processor applying for item 50 of the patent application scope, the first signal is roughly It is 180 degrees out of phase with the second signal. 52. — A storage medium readable by a processor, the medium is filled with a code, which can control a processing chamber when a thin film is constructed on a semiconductor wafer, The processing chamber includes a gas screen, a heating element, a pressure control unit, and an RF signal source. The code includes: a first code that instructs the processor to provide signals to the gas screen, the heating device, and the A pressure control unit for depositing a material layer on a wafer in a processing chamber; a second code 'the second code instructs the processor to provide a signal to the gas screen, the heating device, the pressure control unit and the signal source in order to Plasma toughens the material layer; printed by the Mekong Consumer Cooperative of the Central Bureau of the Ministry of Economic Affairs (please read the note on the back before filling out this page) d, the third code 'the third code instructs the processor provide Signal to the gas screen, the heating device and the pressure control unit so that silicon fills the material layer. 53 'If the processor-readable storage medium of item 52 of the patent application scope, wherein the third code instructs the processor to make the gas screen provide a silane. 54_—a storage medium readable by the processor, the medium Infused code -78- Printed A8 by Shelley Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs: S then ”___ D8 VI. Patent Application Scope This code can control a processing room when constructing a thin film on a semiconductor wafer, where the processing The chamber contains a gas screen, a heating element, a pressure control unit and an RF signal source. The code includes: a first code that instructs the processor to provide a signal to the gas ballast screen, the heating device, and the pressure control. A unit for immersing a material layer on a wafer in a processing chamber, wherein the air shield is instructed to provide a precursor gas for depositing a ternary metal nitride; and a second code, the second programma instructs a processing machine ^ For the signal to the gas screen, the heating device, the pressure control unit and the rfm source in order to plasmatize the material layer β 55. For example, the storage medium in the scope of application for patent No. 54 where the ternary metal stone gas The compound includes at least one material selected from the group consisting of titanium, group, crane, and junction. This paper M is suitable for China National Kneading Car (CNS) Ya 4 Wuji (21 () &gt; &lt; 297) and (please read the precautions on the back before filling this page)