五、發明説明（） A7 B7 經濟部智慧財產局貞工消費合作社印製 發明領域.： 本發明與一種化學機械研磨法（cheinjcai iy mechaniCal polishmg )之半導體製程有關，特別是一種在化學機械研磨 製程中偵測膜層厚度以決定終點（endp〇int)之方法。 發明皆熹： 隨著半導體工業持續的進展，在超大型積體電路 (ULSI)的開發與設計中，為了符合高密度積體電路之設計趨 勢’各式元件之尺寸皆降至次微米以下。而且由於元件不斷 的縮小’導致在進行相關半導體製程時，往往遭遇了前所未 有之難題’且製程之複雜程度亦不斷提高。其中，隨著元件 尺寸縮小’高低起伏的沉積膜層經常造成孔洞（v〇id)現象等 缺陷的發生。此外’由於所沉積膜層之不平坦，亦容易造成 後續所進行的微影製程（photolithography)，產生’曝光聚焦 (focus)上的問題’進而降低了傳遞微影影像的準確度與解 析度。因此’為了克服晶圓表面膜層劇烈的高低落差，且提 局後續疋義膜層圖案之精確度’平坦化製程（P丨anarizarj〇n pro cess)受到了廣泛的重視與發展。 其中’化學機械研磨法（chemical-mechanical polishing; CMP)為當前唯一能在超大型積體電路（ULSI)中，提供全面 性平坦化（Global Planarization)之重要技術。藉著使用握柄 (holder)抓取欲進行研磨製程之晶圓，且將晶圓的正面壓置 (請先閱讀背面之注意事項再填寫本頁)V. Description of the invention () A7 B7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs of the Jungong Consumer Cooperative. The invention relates to a semiconductor mechanical process of cheinjcai iy mechaniCal polishmg, especially a chemical mechanical polishing process. The method of detecting the thickness of the film layer to determine the end point. All inventions are: With the continuous progress of the semiconductor industry, in the development and design of ultra-large integrated circuits (ULSI), in order to meet the design trend of high-density integrated circuits, the size of various components has been reduced to sub-micron. Moreover, due to the continuous shrinking of the components ', the related semiconductor process often encounters unprecedented problems' and the complexity of the process is also increasing. Among them, as the size of the device shrinks, the undulating deposited layer often causes defects such as a void phenomenon. In addition, due to the unevenness of the deposited film layer, it is also easy to cause the subsequent photolithography process, which will cause a problem of 'exposure focus', which further reduces the accuracy and resolution of the transmitted lithography image. Therefore, in order to overcome the sharp difference in the height of the film layer on the wafer surface, and to improve the accuracy of the subsequent sense film pattern, the planarization process (Panarizarjon process) has received extensive attention and development. Among them, chemical-mechanical polishing (CMP) is the only important technology that can provide global planarization in ultra large integrated circuits (ULSI). Grab the wafer to be polished by using a holder, and press the front side of the wafer (please read the precautions on the back before filling this page)
、1T 本紙張尺度適用中國國家橾準（CNS ) Α4規格（210X 297公釐） 五、發明説明（) A7 B7 經濟部智慧財產局員工消費合作社印製 於具有一層研磨墊（polishing pad)的研磨台 工，並添加研號 (slurry)於該研磨墊上以作為研磨晶圊的化輋 罕助劑，便可開 始進行研磨程序。當研磨程序進行時，研磨a也t σ興握柄將順著 一定的方向旋轉。並且，添加的研漿，可延装 心考~條輪送管， 噴灑於研磨墊上表面。如此一來，晶圓表面凸出的沉積膜 層，便可在研磨程序中被加以移除，而達成所需的平=化程 度。 一般而言，藉著調整進行化學機械研磨裎序時所使用 的研漿成份、晶圊上施加壓力的大小、進行研磨的轉速、研 磨塾的材質…等等，可有效的控制所進行化學械研磨製程的 結果。然而，在實際半導體製程的運用尹，此項技術依舊遭 遇許多製程整合上之問題。例如，在對晶圓進行化學機械研 磨程序時’無法有效的偵測化學研磨程序之終點。在傳統製 程中’在往藉考形成作為停止層（St〇P layer)使用之氮化石夕層 或多晶矽層’來協助判斷研磨程序進行的狀況。然而，對於 在形成較厚氧化層後’所進行移除部份氧化層的研磨程序 中’則無法藉由停止層來作為研磨程序的終點。對此’在目 前的化學機械研磨技術中，則往往需藉由光學效應、電流效 應、溫度、噪音、或蝕刻速率等等條件，來加以判斷研磨的 程序與效果。 請參照第一圖，該圖為研磨機台之截面圖，用以顯示 在目刚的化學機械研磨製程中，對進行研磨中的晶圓進行同 本紙》Jdii用中ϋ國家標準（CNS M4規格（21GX297公羞） {請先閲讀背面之注意事項再填寫本頁) 訂 A7 B7 五、發明説明（） 步量測（In-Situ Remote Monitor; ISRM)厚度之方式。其中， 如同上述，可使用握柄（未顯示於圖中）將晶圓10壓置於具 有研磨墊 1 5之研磨平台（plat en)30。並且在進行研磨程序 時，一研漿25被注射至該研磨墊15之上表面，以作為化學 助劑。在研磨平台3 0中，則具有一雷射模組3 5，用以對被 研磨的膜層，進行同步量測的工作。透過對該雷射模組3 5 的控制，可照射一雷射入射光45至鏡片50,且經過鏡片50 的反射後，依序穿透研磨平台30上方之透光片40，以及位 於研磨墊15中之研磨墊窗20，而照射於進行研磨程序的晶 圓1 0表面上。該入射光4 5在照射於晶圓1 0後，可產生反 射光，且依序穿透研磨墊窗20與透光片40，而為同樣位於 雷射模組3 5中之一偵側器5 5所接收。其中，值得注意的是 由於所使用之研磨平台30，通常為IS合金材料，是以需加 裝由壓克力或其它透光材質所製造的透光片40。同樣的， 由於研磨墊15亦為不透光材質所製造，是以亦裝設了類似 PU材質之研磨墊窗20。並且使該研磨墊窗20位於該透光 片40之上方，以方便入射光45通過。 接著，請參照第二圖，該圖所顯示為進行化學機械研 磨製程中，其研磨平台之俯視圖。如同上述，該研磨平台可 進行研磨製程中的晶圓進行同步測量（ISRM)，以決定被研 磨膜層之厚度，並用以判斷是否已抵達終點（endpoint)。'-其 中，該晶圓10被壓置於上述研磨墊15之表面，且沿著逆時 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） (請先聞讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 A7 _B7_ 五、發明説明（） 針方向旋轉，以進行研磨程序。同時，表面具有研磨墊15 之研磨平台亦會沿著逆時針方向旋轉，以加強研磨效果。值 得注意的是，如同上述，一可透光之研磨墊窗20位於該研 磨墊20上，當該晶圓10通過研磨墊窗20上方時，可使用 第一圖中之入射光45,對晶圓10表面進行研磨的膜層進行 照射，且使用偵測器5 5加以接收其反射光。 請參照第三圖，該圖所顯示為使用入射光4 5照射於 晶圓10之示意圖。其中，當該入射光4 5照射於晶圓1 0表 面上被研磨的膜層12時，該入射光45可在膜層12的第一 表面（亦即遠離晶圓之表面）發生反射，而產生反射光46, 且為偵測器5 5所接收。同時，部份入射光4 5並可穿透厚度 為d之膜層12，而在該膜層12與晶圓10接合之第二表面 發生反射，而產生反射光47，並為偵測器5 5所接收。是以， 對偵測器5 5而言，其所偵測之訊號包括了反射光4 6與反射 光47，且為上述兩種反射光之疊加。亦即，為上述反射光 46與反射光47之干涉訊號。 值得注意的是，上述所偵測包括反射光46、47之疊 加訊號，往往具有正弦波函數的型式，且所形成之正弦波函 數是以研磨膜層厚度為因子。是以如第四圖所示，所偵測之 疊加訊號，可以正弦波函數圖形來加以表示。其中，X轴代 表被研磨膜層之厚度，而Y軸則代表所偵測之訊號強度。 並且，可根據正弦波訊號其正負值，與其一階微分後之正負 本紙張尺度適用中國國家橾準（CNS ) Α4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁)、 1T This paper size is applicable to China National Standards (CNS) A4 specifications (210X 297 mm) V. Description of the invention () A7 B7 Printed on a polishing pad with a polishing pad by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A worker can add a slurry to the polishing pad as a chemical additive to grind crystals, and the polishing process can be started. When the grinding process is performed, the grinding a will also rotate in a certain direction. In addition, the added mortar can be extended to the heart test ~ tube feeding tube and sprayed on the upper surface of the polishing pad. In this way, the protruding deposited layer on the wafer surface can be removed during the polishing process to achieve the required level of planarization. In general, by adjusting the composition of the slurry used in the chemical mechanical polishing process, the amount of pressure applied to the crystal, the speed of grinding, the material of the grinding, etc., the chemical machinery can be effectively controlled. Results of the grinding process. However, in the application of actual semiconductor processes, this technology still suffers from many process integration issues. For example, when performing a chemical mechanical grinding process on a wafer ', the endpoint of the chemical grinding process cannot be detected effectively. In the traditional process, 'Nitride layer or polycrystalline silicon layer used as a stop layer (StOP layer) is borrowed to assist in judging the progress of the polishing process. However, in the polishing process of removing a part of the oxide layer after the formation of a thicker oxide layer, the stop layer cannot be used as the end point of the polishing process. In this regard, in the current chemical mechanical polishing technology, it is often necessary to judge the polishing process and effect by using conditions such as optical effects, current effects, temperature, noise, or etching rate. Please refer to the first figure, which is a cross-sectional view of the grinding machine, which is used to show that the wafer being polished is the same as the paper in the chemical-mechanical polishing process of Mekong's "JDII National Standard (CNS M4 Specification) (21GX297 public shame) {Please read the notes on the back before filling out this page) Order A7 B7 V. Invention Description () In-Situ Remote Monitor (ISRM) thickness method. Wherein, as described above, the wafer 10 can be pressed onto a polishing platform (plat en) 30 having a polishing pad 15 using a grip (not shown). During the polishing process, a slurry 25 is injected onto the upper surface of the polishing pad 15 as a chemical additive. In the polishing platform 30, there is a laser module 35 for performing synchronous measurement on the film layer to be polished. Through the control of the laser module 35, a laser incident light 45 can be irradiated to the lens 50, and after the reflection of the lens 50, it can sequentially penetrate the light transmitting sheet 40 above the polishing platform 30, and the polishing pad The polishing pad window 20 in 15 is irradiated on the surface of the wafer 10 on which the polishing process is performed. After the incident light 45 is irradiated on the wafer 10, it can generate reflected light, and sequentially penetrate the polishing pad window 20 and the light-transmitting sheet 40, and is one of the detectors also located in the laser module 35. 5 5 received. Among them, it is worth noting that since the grinding table 30 used is usually an IS alloy material, a light-transmitting sheet 40 made of acrylic or other light-transmitting materials needs to be installed. Similarly, since the polishing pad 15 is also made of opaque material, a polishing pad window 20 similar to PU material is also installed. The polishing pad window 20 is positioned above the light-transmitting sheet 40 so as to facilitate the passage of incident light 45. Next, please refer to the second figure, which shows the top view of the grinding platform during the chemical mechanical grinding process. As mentioned above, the polishing platform can perform synchronous measurement (ISRM) of wafers in the polishing process to determine the thickness of the film to be polished and use it to determine whether the endpoint has been reached. '-Among them, the wafer 10 is pressed onto the surface of the above-mentioned polishing pad 15 and the Chinese paper rubbing (CNS) A4 specification (210X297 mm) is applied along the counterclockwise paper size (please read the note on the back first) Please fill in this page for the items) Order A7 _B7_ printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of the invention () Rotate the needle direction to carry out the grinding process. At the same time, the polishing platform with the polishing pad 15 on the surface will also rotate counterclockwise to enhance the polishing effect. It is worth noting that, as mentioned above, a light-transmissive polishing pad window 20 is located on the polishing pad 20. When the wafer 10 passes above the polishing pad window 20, the incident light 45 in the first figure can be used to align the wafer. The polished film layer on the surface of the circle 10 is irradiated, and the reflected light is received by the detector 55. Please refer to the third figure, which shows a schematic diagram of irradiating the wafer 10 with the incident light 45. Wherein, when the incident light 45 is irradiated on the polished film layer 12 on the surface of the wafer 10, the incident light 45 can be reflected on the first surface of the film layer 12 (that is, the surface far from the wafer), and Reflected light 46 is generated and received by the detector 55. At the same time, a part of the incident light 45 can penetrate the film layer 12 with a thickness of d, and the second surface of the film layer 12 that is bonded to the wafer 10 is reflected to generate the reflected light 47, which is the detector 5 5 received. Therefore, for the detector 55, the detected signals include the reflected light 46 and the reflected light 47, which are the superposition of the above two kinds of reflected light. That is, it is the interference signal of the reflected light 46 and the reflected light 47 described above. It is worth noting that the detected signals including the superposed signals of reflected light 46 and 47 often have a sine wave function type, and the sine wave function formed is based on the thickness of the polishing film layer as a factor. Therefore, as shown in the fourth figure, the detected superimposed signal can be represented by a sine wave function graph. The X-axis represents the thickness of the film being polished, and the Y-axis represents the detected signal strength. In addition, the positive and negative values of the sine wave signal and the positive and negative values after the first order differentiation can be used. The paper size is applicable to the Chinese National Standard (CNS) Α4 specification (210X297 mm) (Please read the precautions on the back before filling this page)
，1T 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 值，將一個週期之正弦波函數，區分為四個區段。亦即，可 將一個週期的正弦波函數所對應的膜層厚度劃分為四個區 段。例如第四圖中所劃分之d〇今di，di + d2，d2 + d3，d3 + d4。 如此一來，在進行化學機械研磨製程中，可根據所偵測之訊 號，位於那一個區段中，而研判出該膜層可能之厚度。 然而在實際的運用上述同步量測方法時，所遭遇的問 題往往更加複雜。請參照第五圖，在圖所顯示為進行研磨製 程中之晶圓10其示意圖。其中，如同前述，經由對雷射模 組的控制，可產生入射光 145，以進行同步量測程序 (ISRM)。但是，由於晶圓1 0上往往包含法數量極多之各式 膜層，例如第五圖中之氧化層12、金屬層11與氧化層9。 是以在照射入射光145於膜層12，以產生反射光時，經常 會產生由不透光的金屬層11所造成之反射光146;或是產生 由氧化層 9所造成之反射光147。顯然，上述兩種反射光 146、147並無法有效的反應出被研磨膜層（氧化層12)之厚 度，且在為偵測器接收後，可造成所得疊加訊號之雜訊，而 產生如第六圖中所示，軌跡差異極大之疊加訊號102。其中 對照於單純由研磨膜層反射光所構成正弦波函數（虛線 101)，可發現包含了大量雜訊之疊加訊號102，將導.致在進 行判讀程序以決定研磨膜層厚度時，產生極大的困難與麻 煩。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） i HI I- - 1«-I. j I nn Ur - ml HI n^i n - - i 1 * ^-53 (請先閱讀背面之注意事項再填寫本頁) A7 B7 五、發明説明（） 發明目的及概述： (請先閲讀背面之注意事項再填寫本頁) 本發明之目的為一種在進行化學機械研磨程序中對 被研磨膜層進行同步量測（IsRM)以判定膜層厚度之方法。 本發明之再一目的為一種使用至少兩組入射光照射 於晶圓膜層上，以產生至少兩組反射光訊號，並用以判定膜 層厚度之方法。 經濟部智慧財產局員工消費合作社印製 本發明提供了 一種在化學機械研磨（CMP)製程中，偵 測晶圓上表面膜層厚度之方法。其中，首先提供一具有膜層 之晶圓，其中膜層位於晶圓之上表面，且具有與晶圓接合之 第一表面，與遠離晶圓之第二表面。接著，將晶圓壓置於研 磨墊上，以便對位於晶圓上之膜層進行研磨程序，其中此研 磨程序用以對膜層之第二表面進行研磨，以移除部份膜層。 然後，再照射第一入射光於晶圓上表面之膜層上，且產生第 一複合反射光，其中第一複合反射光包含第一入射光照射於 膜層之第一表面與第二表面，所分別產生之反射光。且照射 第二入射光於晶圓上表面之膜層上，以產生第二複合反射 光，其中第二複合反射光包含第二入射光照射於膜層之第一 表面與第二表面，所分別產生之反射光。接著，偵測第一複 合反射光與第二複合反射光，而分別獲得第一組正弦波訊號 與第二組正弦波訊號，其中第一組正弦波訊號與第二组正弦 波訊號皆為膜層厚度之正弦波函數。並且比較上述第一組正 弦波訊號與第二組正弦波訊號，可將對應於第一組正弦波訊 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 經濟部智慧財產局員工消旁合作社印製 A7 ___B7__ 五、發明説明（） 號一個週期之膜層厚度’區分為十二個區段，並根據第—級 正弦波訊號與第二組正弦波訊號所處之區段，判斷膜層厚 度。 圖式簡單說明： 藉由以下詳細之描述結合所附圖示，將可輕易的了解 上述内容及此項發明之諸多優點，其中： 第一圖為可進行同步量測（IRSM)之化學機械研磨機 台載面示意圖’顯示根據傳統技術對在進行研磨程序之晶圓 照射入射光以對被研磨膜層厚度進行量測之步驟； 第二圖為可進行同步量測（IRSM)之化學機械研磨機 台俯視圖’顯示根據傳統技術將晶圓壓置於研磨墊上以進行 研磨程序’且同時進行膜層厚度量測之步驟； 第二圖為半導體晶片之截面圖’顯示根據傳統技術對 晶圓上被研磨膜層進行量測之步驟； 第四圖為被研磨膜層其反射光訊號圖，顯示根據傳统 技術將所得之反射光訊號圖區分為四個厚度區段，以方便進 行膜層厚度研判； 第五圖為半導體晶片之載面圖，顯示根據傳統技術辦 晶圓上被研磨膜層進行量測所遭遇之困難與問題； 第六圖為被研磨膜層其反射光訊號圖，顯示根據傳统 技術所獲得之反射光訊號在進行膜層厚度研判時所遭遇之 本紙張尺度適用中國圏家標準（CNS )八4規格（210·〆297公釐）, 1T Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. The value of the invention, divides the sine wave function of a cycle into four sections. That is, the film thickness corresponding to a period of the sine wave function can be divided into four sections. For example, d0 and di, di + d2, d2 + d3, and d3 + d4 are divided in the fourth figure. In this way, in the chemical mechanical polishing process, based on the detected signal, which zone is located, the possible thickness of the film layer can be determined. However, in the practical application of the above-mentioned synchronous measurement methods, the problems encountered are often more complicated. Please refer to the fifth figure, which shows a schematic diagram of the wafer 10 during the polishing process. Among them, as mentioned above, by controlling the laser module, the incident light 145 can be generated for the synchronous measurement procedure (ISRM). However, since the wafer 10 often includes many kinds of film layers, such as the oxide layer 12, the metal layer 11, and the oxide layer 9 in the fifth figure. That is, when the incident light 145 is irradiated on the film layer 12 to generate reflected light, the reflected light 146 caused by the opaque metal layer 11 is often generated; or the reflected light 147 caused by the oxide layer 9 is often generated. Obviously, the above two kinds of reflected light 146 and 147 cannot effectively reflect the thickness of the polished film layer (oxide layer 12), and after being received by the detector, it can cause noise of the resulting superimposed signal, resulting in As shown in the six figures, the superimposed signal 102 is extremely different in trajectory. Among them, compared with the sine wave function (dotted line 101) composed solely of the reflected light of the polishing film layer, it can be found that the superimposed signal 102 containing a large amount of noise will lead to a great result when the interpretation process is performed to determine the thickness of the polishing film layer Difficulties and troubles. This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm) i HI I--1 «-I. J I nn Ur-ml HI n ^ in--i 1 * ^ -53 (Please read the back first Please note this page before filling in this page) A7 B7 V. Description of the invention () Purpose and summary of the invention: (Please read the notes on the back before filling this page) The purpose of this invention is to perform grinding on the chemical mechanical polishing process. The method of performing film thickness measurement (IsRM) to determine film thickness. Still another object of the present invention is a method for irradiating at least two sets of incident light on a wafer film layer to generate at least two sets of reflected light signals and for determining the thickness of the film layer. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics The present invention provides a method for detecting the thickness of a surface film layer on a wafer in a chemical mechanical polishing (CMP) process. First, a wafer having a film layer is provided, wherein the film layer is located on the upper surface of the wafer, and has a first surface bonded to the wafer and a second surface remote from the wafer. Then, the wafer is pressed on the polishing pad to perform a polishing process on the film layer on the wafer, wherein the polishing process is used to polish the second surface of the film layer to remove a part of the film layer. Then, the first incident light is irradiated on the film layer on the upper surface of the wafer, and a first composite reflected light is generated. The first composite reflected light includes the first incident light irradiated on the first surface and the second surface of the film layer. The resulting reflected light. And irradiating the second incident light on the film layer on the upper surface of the wafer to generate a second composite reflected light, wherein the second composite reflected light includes the second incident light shining on the first surface and the second surface of the film, respectively Generated reflected light. Then, the first composite reflected light and the second composite reflected light are detected, and the first group of sine wave signals and the second group of sine wave signals are obtained, wherein the first group of sine wave signals and the second group of sine wave signals are films. Sine wave function of layer thickness. And comparing the first group of sine wave signals with the second group of sine wave signals, the paper size corresponding to the first group of sine wave signals can be applied to the Chinese National Standard (CNS) A4 specification (210X 297 mm). Intellectual Property Bureau of the Ministry of Economic Affairs A7 printed by the employee's cooperative. ___B7__ 5. Description of the invention () The film thickness of one cycle is divided into twelve sections, and according to the first-level sine wave signal and the second group of sine wave signals. To determine the film thickness. Brief description of the drawings: The above description and the many advantages of this invention can be easily understood through the following detailed description combined with the attached drawings, of which: The first picture is a chemical mechanical polishing capable of synchronous measurement (IRSM) Schematic diagram of the machine's surface showing the steps of measuring the thickness of the film to be polished by irradiating incident light on the wafer during the polishing process according to the conventional technology; the second figure is a chemical mechanical polishing capable of performing synchronous measurement (IRSM) The top view of the machine 'shows the steps of pressing the wafer on a polishing pad to perform a polishing process according to the conventional technology' and performing the film thickness measurement at the same time; the second figure is a cross-sectional view of a semiconductor wafer 'showing the wafer on the conventional technology The measurement steps of the polished film layer; The fourth figure is the reflected light signal diagram of the polished film layer, which shows that the obtained reflected light signal diagram is divided into four thickness sections according to the traditional technology to facilitate the film thickness investigation and judgment. ; The fifth figure is a surface view of a semiconductor wafer, showing the difficulties and problems encountered in the measurement of the polished film layer on the wafer according to the traditional technology; The figure shows the reflected light signal of the film being polished. It shows that the reflected light signal obtained according to the traditional technology is subjected to the Chinese paper standard (CNS) 8 4 specification (210 · 〆) when the film thickness is evaluated. 297 mm)
(請先閲讀背面之注意事項再填寫本頁J <161 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（） 困難與問題； 第七圖為可進行同步量測（IRSM)之化學機械研磨機 台截面示意圖，顯示根據本發明對在進行研磨程序之晶®照 射至少兩道入射光以對被研磨膜層厚度進行量測之步驟； 第八圖為被研磨膜層其反射光訊號圖’顯示根據本發 明所獲得之至少二組反射光訊號在進行膜層厚度研判時，可 將其區分為十二個厚度區段’以方便進行骐層厚度研判；及 第九圈為被研磨膜層其反射光訊號圖’顯示根據本發 明使用至少二組反射光訊號進行膜層厚度研判。 圈號射照說明： 210 晶圓 215 研磨墊 220 研磨墊窗 230 研磨平台 235 雷射模組 240 透光片 245 第一組入射光 246 第二組入射光 250 鏡片組 255 偵測器 80 1 第一複合反射光訊號 802 第二複合反射光訊號 發明娣細説明= 本紙張尺度適用中國國家標準（CNS)A4規格〈210 X 297公釐） ------------I - I I-----訂·------ 線 ,(請先閱讀背面之注意事項再填寫本頁) A7(Please read the precautions on the back before filling in this page. J < 161 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () Difficulties and problems; Figure 7 shows the possible simultaneous measurement (IRSM) A schematic cross-sectional view of a chemical mechanical polishing machine table, showing the step of irradiating at least two incident lights on the crystals® undergoing the grinding process to measure the thickness of the film being polished according to the present invention; the eighth figure is the reflection of the film being polished The light signal diagram 'shows that at least two sets of reflected light signals obtained according to the present invention can be divided into twelve thickness sections when the film thickness is evaluated' to facilitate the evaluation of the layer thickness; and the ninth circle is The reflected light signal diagram of the polished film layer 'shows that the film thickness is determined by using at least two sets of reflected light signals according to the present invention. Ring number photo description: 210 wafer 215 polishing pad 220 polishing pad window 230 polishing platform 235 laser mode Group 240 Transparent sheet 245 First group of incident light 246 Second group of incident light 250 Lens group 255 Detector 80 1 First composite reflected light signal 802 Second composite reflected light signal Detailed explanation = This paper size applies to China National Standard (CNS) A4 specifications <210 X 297 mm) ------------ I-I I ----- Order · --- --- line, (Please read the precautions on the back before filling this page) A7
五、發明說明（） 經濟部智慧財產局員工消費合作社印製 本發明所揭示為-種在進行化學機械研磨程序中，進 行同步量測（IRSM)，以即時（real time)判定被研磨膜層厚度 之方法。其中，藉著照射至少兩組入射光於晶圓膜層上，$ 產生至少兩組反射光訊號。再藉由比較所獲得之至少兩組反 射光訊號，將可更精確的判定膜層之厚度。有關本發明之詳 細說明如下所述。 請參照第七圖’根據本發明所提供之方法，可使用新 的雷射模組235來進行同步量測（isRM)程序。在一應用實 例中’可使用台灣應用材料股份有限公司所製造的MIRRA 型化學機械研磨機台’並將本發明_所提供之方法，應用於 該型機台内。其中’如同前述，可將晶圓210壓置於MIRRA 機台上的研磨墊215表面’以進行化學機械研磨製程，且添 加研漿225於研磨墊215表面上，以作為移除反應申之化學 助劑。該研磨塾215並具有一研磨塾窗（pad window)220， 以提供進行同步量測之入射光通過。至於該研磨墊2 1 5則位 於一研磨平台230表面上，並且可隨著該研磨平台230作逆 時針方向之旋轉，而加強研磨晶圓210其膜層之效果。至於 在研磨墊窗22 0下方的研磨平台230内，則具有一透光片 (diffuser)240，用以使入射光可通過由鋁合金所製造的研磨 平台230，且入射至研磨墊窗220。透光片240之材質，一 般可選擇壓克力板或相類似的透光材質，來加以製造；而該 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） _ί請先閱讀背面之注意事項再填寫本頁) -線_ A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（ 研磨墊窗220則可選擇PU材質的材料來加以製造 至於位於晶圓2丨0表面上’欲進行化學機械研磨程序 與同步量測（[SRM)之膜層，在較佳實施例中，則以氧化層、 氮化層等等具有透光性的材質來構成。如此，在照 於該膜層，可較容易穿透該獏層，且分別在該膜層不同的表 面上，產生反射光。 值得注意的是’在研磨平台230中，並採用根據本發 明所提供之雷射模組235。其中，該雷射模組23 5可同時提 供至少兩組入射光，以對晶圓2 1 0上之膜層進行同步量測程 序，且所使用之至少兩組入射光分別具有不同之波長。其中 在一較佳實施例中，可煶供如第七圖中所示之第一組入射光 245與第二組入射光246’已對晶圓210進行照射》如同前 述’所使用之第一組入射光245與第二組入射光246，可分 別照射於鏡片組2 5 0 ’且經由鏡片組2 5 0的反射，而分別透 射研磨平台230 _之透光片240，且再透射研磨塾窗220， 而照射於晶圓2 1 0上之膜層’而分別產生第一組反射光與第 二組反射光；然後，所產生的第一組反射光與第二組反射光 可再依序透過研磨墊窗220與透光片24〇，而入射於偵測器 (detector)255*特別要說明的是，在實際運用中，可於雷射 模組235中，裝設至少兩組雷射（Laser),以產生所需之入 射光，並且也可根據每一組雷射所需，而裝設其相關之鏡片 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---------------11--—訂------I —線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 _B7_ 五、發明說明（） 組2 5 0與偵測器2 5 5。此外，也可根據實際操作所需，而提 供一組以上的雷射模組2 3 5，以便提供所需之雷射光源。 其中，由於所使用之第一組入射光24 5與第二組入射 光246分別具有不同之波長，是以在分別照射於晶圓2 1 0 上之膜層後，所個別產生的反射光，在經由偵測器2 5 5進行 偵測後，依舊可輕易的區分與辨別。值得注意的是該膜層如 同前述，具有接合於晶圓210之第一表面，與相對於第一表 面之第二表面，亦即該膜層之第二表面即被壓置於研磨墊 2 1 5以進行研磨。此外，照射於晶圓2 1 0上表面之第一組入 射光，可分別於進行研磨膜層的第一表面與第二表面上產生 反射光，且經過干涉（interference)後而形成第一複合反射 光。同理，照射第二組入射光於晶圓 2 1 0上表面之膜層上 時，所產生的第二複合反射光，往往亦包含第二入射光246 照射於膜層之第一表面與第二表面，所分別產生反射光其疊 加干涉結果。 值得注意的是，上述使用偵測器2 5 5所偵測之第一複 合反射光與第二複合反射光訊號，往往具有以研磨膜層厚度 為因子之正弦波函數型式。亦即，如第八圖所示，使用波長 為1 3000埃之第一組入射光245與波長為6700埃之第二組 入射光246，所得到之第一複合反射光訊號80 1與第二複合 反射光訊號802，可分別表示成以膜層厚度為因子之正弦波 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ，(請先閱讀背面之注意事項再填寫本頁) 訂： --線. A7V. Description of the invention () Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the present invention is disclosed as a method for performing synchronous measurement (IRSM) in the process of chemical mechanical polishing to determine the real-time polished film layer. Method of thickness. Among them, by irradiating at least two sets of incident light on the wafer film layer, at least two sets of reflected light signals are generated. By comparing at least two sets of reflected light signals obtained, the thickness of the film layer can be determined more accurately. A detailed description of the present invention is as follows. Please refer to FIG. 7 'according to the method provided by the present invention, a new laser module 235 can be used to perform a synchronous measurement (isRM) procedure. In an application example, 'the MIRRA type chemical mechanical polishing machine manufactured by Taiwan Applied Materials Co., Ltd.' can be used and the method provided by the present invention is applied to this type of machine. Among them, as mentioned above, the wafer 210 can be pressed on the surface of the polishing pad 215 on the MIRRA machine to perform a chemical mechanical polishing process, and a slurry 225 is added on the surface of the polishing pad 215 as a chemical for removing the reaction. Auxiliaries. The polishing pad 215 also has a pad window 220 to provide the passage of incident light for simultaneous measurement. As for the polishing pad 2 1 5, it is located on the surface of a polishing table 230, and the polishing pad 230 can be rotated counterclockwise to enhance the effect of polishing the film layer of the wafer 210. As for the polishing platform 230 below the polishing pad window 220, there is a diffuser 240 for allowing incident light to pass through the polishing platform 230 made of aluminum alloy and enter the polishing pad window 220. The material of the light-transmitting sheet 240 is generally made of acrylic plate or similar light-transmitting material, and the paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) _ίPlease Read the notes on the back before filling this page) -line_ A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (The polishing pad window 220 can be made of PU material to be manufactured. It is located on the wafer 2丨 0 On the surface, the film layer to be subjected to chemical mechanical polishing process and synchronous measurement ([SRM), in a preferred embodiment, is made of a transparent material such as an oxide layer, a nitride layer, and the like. It is easier to penetrate the plutonium layer when irradiated on the film layer, and to generate reflected light on different surfaces of the film layer. It is worth noting that 'in the grinding platform 230, and adopting the method provided by the present invention Laser module 235. Among them, the laser module 235 can simultaneously provide at least two sets of incident light to perform a synchronous measurement procedure on the film layer on the wafer 210, and at least two sets of incident light are used. Light has different wavelengths respectively. In a preferred embodiment, the first group of incident light 245 and the second group of incident light 246 'as shown in the seventh figure may be used to irradiate the wafer 210' as in the first group used above. The incident light 245 and the second group of incident light 246 can be respectively irradiated on the lens group 250 ′ and reflected by the lens group 250 ′, respectively, and transmitted through the light-transmitting sheet 240 of the polishing platform 230_, and then transmitted through the polishing window. 220, and the first layer of reflected light and the second group of reflected light are generated by irradiating the film layer on the wafer 210, respectively, and then the generated first group of reflected light and the second group of reflected light can be sequentially Through the polishing pad window 220 and the light-transmitting sheet 24o, and incident on the detector 255 * In particular, in practice, at least two sets of lasers can be installed in the laser module 235 (Laser) to generate the required incident light, and can also be equipped with related lenses according to the needs of each group of lasers. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) --------------- 11 --- Order ------ I --- line (Please read the notes on the back before filling this page) Ministry of Economic Affairs Printed by A7 of the Intellectual Property Bureau's Consumer Cooperatives _B7_ V. Description of the Invention () Group 2 5 0 and Detector 2 5 5. In addition, more than one laser module can be provided according to actual operation requirements 2 3 5, in order to provide the required laser light source. Among them, because the first set of incident light 24 5 and the second set of incident light 246 have different wavelengths, they are irradiated on the wafer 2 1 0 respectively. After the film layer, the individual reflected light can be easily distinguished and discriminated after being detected by the detector 2 5 5. It is worth noting that the film layer is as described above and has A surface and a second surface opposite to the first surface, that is, the second surface of the film layer, are pressed onto the polishing pad 2 1 5 for polishing. In addition, the first group of incident light irradiated on the upper surface of the wafer 210 can generate reflected light on the first surface and the second surface of the polishing film layer respectively, and form a first composite after interference. reflected light. Similarly, when the second group of incident light is irradiated on the film layer on the upper surface of the wafer 210, the second composite reflected light often includes the second incident light 246 on the first surface of the film layer and the first The superimposed interference results of the reflected light generated on the two surfaces. It is worth noting that the first composite reflected light and the second composite reflected light signal detected by the detector 2 5 5 mentioned above often have a sine wave function type with the thickness of the abrasive film layer as a factor. That is, as shown in the eighth figure, using the first set of incident light 245 with a wavelength of 1 3000 angstroms and the second set of incident light 246 with a wavelength of 6700 angstroms, the first composite reflected light signals 80 1 and second The composite reflected light signal 802 can be expressed as a sine wave with the film thickness as a factor. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). (Please read the precautions on the back before filling in this. Page) Order: --line. A7
B 五、發明說明（ 圖形。其中，X軸代表被研磨膜層之厚度， 所偵測之反射光訊號 而Y軸則代表 經濟部智慧財產局員工消費合作社印製 如同在第四圖中所描述，在僅有〜λ Α 入射光的條件下， 根據所偵測反射光其正弦波訊號之正負估办认 只值’與其一階微分後 之正負值，可將一個遇期之正弦波函數所 所對應之膜層厚度， 區分為四個區段。亦即，可將一個週期的正 J此弦波函數所對應 的膜層厚度’劃分為如第四圖中示之d0^dl，d[+d2，d2+d3, d3_>d4等四個區段。如此一來’在進行化學機械研磨製程 中’可根據所4貞測之訊號，位於那一個區段中，而研判出該 膜層可能之厚度。 然而，根據本案所提供之實施例，則分別使用了波長 不同之第一組入射光 245與第二組入射光246，來對晶圓 210進行同步量測，並且同時產生了兩組不同的正弦波訊號 (即上述之第一複合反射光訊號801與第二複合反射光訊號 802)。其中，在根據所偵測反射光訊號（8〇1、802)其正弦波 訊號之正負值，與其一階微分後之正負值’將可把一個週期 的第一複合反射光訊號所對應之膜層厚度’區分為十二個區 段（包括了 + + + + dii + dl2)。亦即，在考量第一複合反射光訊號80丨之正負值 與其一階微分之正負值；且同時考量第二複合反射光訊號 802之正負值與其一階微分之正負值時’可將如第四圖中’ 13 本紙張尺度適用t國國家標準（CNS)A4規烙（2】〇χ297公釐） I I - I---111 --------I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 B7_ 五、發明說明（) 劃分四個區段之膜層厚度，增加為十二個區段之劃分。 如此一來，在對晶圓210上膜層進行研磨程序時，可 根據所量測第一複合反射光訊號801與第二複合反射光訊 號802所處之區段，來判斷該透光膜層厚度。例如，當所偵 測之第一複合反射光訊號具有正值，且其一階微分為負值； 同時，所偵測之第二複合反射光訊號具有負值，且其一階微 分為正值，則可判定出被研磨之膜層所具有的厚度應該在 d4今d5區段間。同理，當所偵測之第一複合反射光訊號具有 負值，且其一階微分為負值；同時，所偵測之第二複合反射 光訊號具有正值，且其一階微分為負值，則可判定出被研磨 之膜層所具有的厚度應該在d7 + d8區段間。如此，將可更 有效的判定出在進行研磨程序中之膜層相關厚度與研磨效 果》 再請參照第九圖，該圖所顯示為將上述第一複合反射 光訊號801與第二複合反射光訊號8 02沿著被研磨膜層厚 度變化之正弦波圖形。其中，如同前述，隨著膜層厚度在持 續的研磨程序中不斷的減少，第一複合反射光訊號801與第 二複合反射光訊號802，會以重覆性的弦波圖形出現。值得 注意的是，對於傳統製程中，僅以一組入射光進行同步量測 程序之情形，在第九圖的訊號圖中點A、點B、點C所具有 之反射光訊號皆為正值，且其一階微分亦皆為負值。換言 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） — — — — —--I I I I I - — — — III— « — I — — — — — — (請先閱讀背面之注意事項再填寫本頁) A7 B7_ 五、發明說明（) 之，根據傳統的判定標準而言，當所量測之反射光訊號具有 上述正值，且其一階微分為負值的條件時，所代表的膜層厚 度可能為 dA、dB 或 dc。然而，當使用本發明所提供之方 法，來進行同步量測時，在同時比較第一反射光訊號 8 01 與第二反射光訊號802後，可發現當所得之第一反射光訊號 80 1具有正值，且其一階微分為負值；同時，第二反射光訊 號802具有正值，且其一階微分為正值，則可判定此時的膜 層厚度應該為dA。同理，當所得之第一反射光訊號801具 有正值，且其一階微分為負值；同時，第二反射光訊號802 具有負值，且其一階微分為負值，則可判定此時的膜層厚度 應該為dB。並且，當所得之第一反射光訊號801具有正值， 且其一階微分為負值；同時，第二反射光訊號 802具有正 值，且其一階微分為負值，則可判定此時的膜層厚度應該為 dc。如此，除了可有效的決定出被研磨的膜層，其即時（Real time)的厚度外，在判定進行化學械研磨程序時的終點 (endpoint)時，亦可更加準確。 經濟部智慧財產局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 線· 本發明相較於先前技術具有極多的優點。其中，藉著 使用至少兩組波長不同的入射光，來照射晶圓上被研磨之 膜層，且分別產生至少兩組反射光。再透過使用偵測器來 對所產生之至少兩組反射光，進行偵測程序，而獲得具有 以膜層厚度為因子之正弦波函數圖形。如此，藉著將膜層 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 B7 負判’ 正在法 之為方 分作之 微以供 階用提 1 並所 其’明 與段發 值區本 負同用 正不使 其的在 號多以 訊更是 光到。 射得據 反獲依 測可之 读’時 所分度 依區厚 ， 以 層 度加膜 厚值定 前被射 同非反 如層之 ,膜.;!. 外它量 。上成 度圓造 厚晶會 之於往 層射往 膜照’ 出光光 定射射 決入反 的由的 確，生 精中產 更術所 且技)' 效統層 有傳膜 更在之 可，磨 將述研 難來 困 ， 之號。 度訊I 層射準 膜、殳其 一疋吣高 "組日疋 致兩的 導少效 而至有 ’中可 化明將 變發， 生本時 產用定 形使判 圖在行 波而進 弦然度 其。厚 號增層 訊的膜 光性對 五、發明說明（ 本發明雖以一較佳實例闡明如上，然其並非用以限定 本發明精神與發明實體，僅止於此一實施例爾。例如在本發 明中僅舉使用兩組入射光來對晶圊膜層進行照射，以產生兩 組反射光訊號，以作為膜層厚度判定依據。然而對熟悉此領 域技藝者，當可了解在加入第三組入射光、第四組入射 光…，必可使所劃分之區段更為細密且精確，如此將可更有 效的判定進行化學機研磨程序之結果，且用以決定研磨程序 之終點位置。是以，在不脫離本發明之精神與範圍内所作之 修改，均應包含在下述之申請專利範圍内。 --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）B. Description of the invention (Graphics. Among them, the X-axis represents the thickness of the film being polished, the detected reflected light signal and the Y-axis represents the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. It is printed as described in the fourth figure. Under the condition of only ~ λ Α incident light, according to the positive and negative estimates of the sine wave signal of the detected reflected light, only the value 'and its positive and negative values after the first order differentiation can be used to calculate a sine wave function of the period. The corresponding film thickness is divided into four sections. That is, the film thickness corresponding to the sinusoidal wave function of one period can be divided into d0 ^ dl, d [ + d2, d2 + d3, d3_ &d; d4 and so on. In this way, 'in the chemical mechanical polishing process', it can be located in that section based on the signal measured by the test, and the film layer can be determined. Possible thickness. However, according to the embodiment provided in this case, the first group of incident light 245 and the second group of incident light 246 with different wavelengths are respectively used to perform synchronous measurement on the wafer 210, and two Different sine wave signals (i.e. the first The composite reflected light signal 801 and the second composite reflected light signal 802). Among them, the positive and negative values of the sine wave signal according to the detected reflected light signal (801, 802), and the positive and negative values after the first order differentiation will be The thickness of the film layer corresponding to the first composite reflected light signal in one period can be divided into twelve sections (including + + + + dii + dl2). That is, in considering the first composite reflected light signal 80 丨The positive and negative values of the first order differential and the positive and negative values of the first order differential; and when the positive and negative values of the second composite reflected light signal 802 and the positive and negative values of the first order differential are taken into account at the same time, it can be as shown in the fourth figure. (CNS) A4 Regulation (2) 0 × 297 mm) II-I --- 111 -------- I (Please read the precautions on the back before filling out this page) Staff Consumption of Intellectual Property Bureau, Ministry of Economic Affairs Cooperative prints A7 B7_ 5. Description of the invention () The thickness of the film layer divided into four sections is increased to twelve sections. In this way, when performing the polishing process on the film layer on the wafer 210, Measured first composite reflected light signal 801 and second composite reflected light signal 802 To determine the thickness of the transparent film layer. For example, when the detected first composite reflection light signal has a positive value and its first order differential is negative; at the same time, the detected second composite reflection signal is negative. The optical signal has a negative value and its first order differential value is positive, it can be determined that the thickness of the film being polished should be between d4 and d5. Similarly, when the first composite reflected light is detected, The signal has a negative value, and its first order differential is negative; at the same time, the detected second composite reflected light signal has a positive value, and its first order differential is negative, it can be determined that the film being polished has The thickness should be between d7 + d8. In this way, the relative thickness and polishing effect of the film layer during the grinding process can be determined more effectively. Please refer to the ninth figure, which shows the above first The sine wave pattern of the composite reflected light signal 801 and the second composite reflected light signal 802 along the thickness of the film to be polished. Among them, as mentioned above, as the thickness of the film layer is continuously reduced during the continuous polishing process, the first composite reflected light signal 801 and the second composite reflected light signal 802 will appear in a repeating sine wave pattern. It is worth noting that, in the traditional process, only a set of incident light is used for the synchronous measurement procedure. In the signal diagram of the ninth figure, the reflected light signals at points A, B, and C are all positive values. , And its first-order differential is also negative. In other words, this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) — — — — — --IIIII-— — — III — «— I — — — — — — (Please read the note on the back first Please fill in this page again) A7 B7_ V. Description of the invention () According to the traditional judgment standard, when the measured reflected light signal has the above-mentioned positive value and its first order differential is negative, the The representative film thickness may be dA, dB or dc. However, when the method provided by the present invention is used for synchronous measurement, after comparing the first reflected light signal 8 01 and the second reflected light signal 802 at the same time, it can be found that when the obtained first reflected light signal 80 1 has If the positive value is positive and the first order differential is negative; meanwhile, the second reflected light signal 802 has a positive value and the first order differential is positive, it can be determined that the film thickness at this time should be dA. Similarly, when the obtained first reflected light signal 801 has a positive value and its first order differential is negative; meanwhile, the second reflected light signal 802 has a negative value and its first order differential is negative, it can be determined that The film thickness at this time should be dB. In addition, when the obtained first reflected light signal 801 has a positive value and its first order differential is negative; meanwhile, the second reflected light signal 802 has a positive value and its first order differential is negative, it can be determined at this time The film thickness should be dc. In this way, in addition to being able to effectively determine the thickness of the film being polished, its real time thickness, it is also more accurate in determining the endpoint when performing a chemical mechanical polishing procedure. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). Line · This invention has many advantages over the previous technology. Among them, at least two sets of incident light having different wavelengths are used to irradiate the polished film layer on the wafer, and at least two sets of reflected light are generated respectively. Then, by using a detector to detect at least two sets of reflected light, a detection process is performed to obtain a sine wave function pattern having a film thickness as a factor. In this way, by adapting the paper size of the paper layer to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 B7 negative judgments are being made in accordance with the law for the sake of order for the use of 1 and the other. The use of the negative and positive values of the Ming and Duanfa value zones does not make their numbers more than news. The shot data is obtained according to the measurement and can be read when it ’s read. It ’s divided by the thickness of the area, and the layer is added to the film thickness value before being shot. It ’s true that the thick crystals made by the upper circle will shoot to the layer and shoot to the film. The reason why the light is emitted and the light is fixed and the shot is reversed is true. Grinding difficulties will be described as difficult. Duxun I-layer shot quasi-membrane, one of which is very high, "the sun's rays will cause the two to be less effective, and in the meantime, Zhong Kehua Ming will change, and the shape will be used to make the judgment progress in the traveling wave. String Ran degree. Thickness of the film of the thick layer of the film to the fifth, the description of the invention (Although the present invention is explained above with a preferred example, but it is not intended to limit the spirit and the invention of the invention, but only to this embodiment. For example, in In the present invention, only two sets of incident light are used to irradiate the crystalline film layer to generate two sets of reflected light signals as a basis for determining the thickness of the film layer. However, for those skilled in the art, it can be understood that the The group of incident light, the fourth group of incident light, etc., must make the divided sections more fine and accurate, so that the results of the chemical mechanical grinding process can be judged more effectively, and used to determine the end position of the grinding process. Therefore, all modifications made without departing from the spirit and scope of the present invention should be included in the scope of patent application described below. -------- Line (Please read the precautions on the back before filling out this page) Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297 mm) )