2967twf.doc/006 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（ί ) 本發明是有關於一種淸洗晶圓的方法，且特別是有關 於一種對晶圓進行淸洗與乾燥，能夠縮短淸洗過程進行的 時間，以增加產能的方法。 習知在8吋晶圓的淸洗過程中，大量採用IPA公司的 蒸發/乾燥機台（Vapor/Dry，V/D)，但因爲程序所需的時 '1 間太長，而造成整個機台的產能下降。 第1圖繪示爲進行晶圓淸洗的步驟流程圖。請參照第 1圖，首先，將晶圓10放進裝有化學淸洗劑的第一淸洗槽 12中，時間約爲5分鐘；接著將晶圓10取出，再放進裝 有去離子水的第二淸洗槽Η中，浸泡時間約爲5分鐘。 然後，將晶圓10自第二淸洗槽14中取出，再放入第三淸 洗槽16中，時間約爲5分鐘。之後，將晶圓10移至蒸發 與乾燥機台18，進行蒸發與乾燥之步驟，在蒸發與乾燥機 台18中，進行蒸發的時間約爲6分鐘，乾燥的時間約爲6 分鐘；最後將晶圓10移至裝卸裝置20，至此即完成晶圓 10的淸洗步驟。 由於以習知的方法，晶圓10在第一淸洗槽12、第二 淸洗槽14、與第三淸洗槽16的停留時間都只要約5分鐘， 而在蒸發與乾燥機台18停留的時間需要約12分鐘。再進 行淸洗步驟時，當第一批晶圓自第一淸洗槽12，移至第二 淸洗槽14時，第二批晶圓即可進入第一淸洗槽12，開始 進行淸洗的步驟，整個過程可同時進行多批晶圓的淸洗。 但是’因爲在蒸發與乾燥機台18晶圓所停留的時間，遠 較於在其他淸洗槽所花費的時間爲長，當第三淸洗槽16 3 (請先閱讀背面之注意事項再填寫本頁) mi -裝. 訂 .線_ 本纸張尺度適用中國國家標準（CNS ) Α4規格（2丨0父297公漦） 2967twf.doc/006 A7 經濟部中央標準局員工消費合作社印製 五、發明説明（1) 的第二批晶圓已經完成該淸洗步驟時，第一批晶圓尙在蒸 發與乾燥機台18 ;如此會使的後續的淸洗的晶圓，必須等 待蒸發與乾燥機台中的晶圓移出，無法順利的進行蒸發與 乾燥的過程，所以在蒸發與乾燥機台18所停留的時間是 整個淸洗過程的瓶頸，因而影響到整個產能，整個產能的 最大値約爲230pcs/小時。 因此，本發明的主要目的就是在，提供一種淸洗晶圓 的方法，降低在蒸發與乾燥機台停留的時間，以紆解晶圓 在淸洗過程中停滯的現象，以在相同的過程時間內，獲得 車父闻的產能。 根據本發明的上述及其他目的，提出一種淸洗晶圓的 方法，將在蒸發與乾燥機台中乾燥的部分分爲兩階段，第 一階段仍在蒸發與乾燥機台中進行，第二階段移至裝卸裝 置中進行乾燥，使晶圓在蒸發與乾燥機台中停留的總時間 縮短，而降低晶圓在淸洗過程中停滯的情形，可以將產能 提昇至約300pcs/小時，較習知之產能高出約20〜30%。 爲讓本發明之上述目的、特徵、和優點能更明顯易懂’ 下文特舉一較佳實施例，並配合所附圖式，作詳細說明如 下： 圖式之簡單說明： 第1圖繪示爲進行晶圓淸洗的步驟流程圖。 圖示標記說明： 1 〇 晶圓 12第一淸洗槽 4 本紙張尺度適用中關家梯芈（CNS)A4i^ (21Gx297公幻 (請先閲讀背面之注意事項再填寫本頁) •裝. 訂 線 S9S351 967twf.doc/006 經濟部中央標準局負工消费合作社印裝 五、發明说明（j ) 14 第二淸洗槽 16 第三淸洗槽 18 蒸發與乾燥機台 20 裝卸裝置gMM- 請參照第1圖，晶圓ίο的淸洗乾燥流程，仍與圖中所 示相同’首先將晶圓10放進第一淸洗槽12中，槽中承裝 有反應性的化學藥品，以進行化學性的淸洗，時間約爲5 分鐘。 接著，將晶圓10自第一淸洗槽12中取出，再放進第 二淸洗槽14中，槽中承裝有去離子水，用以移除殘留於 晶圓10上的化學藥品，浸泡時間約爲5分鐘。 之後，將晶圓10自第二淸洗槽14中取出，再放入第 三淸洗槽16中，進一步的淸洗晶圓1〇，時間約爲5分鐘。 接著，將晶圓10自第三猜洗槽16移至蒸發與乾燥機 台18 ’進行蒸發與乾燥之步驟，在蒸發與乾燥機台18中， 進行蒸發的時間約爲6分鐘，第一階段的乾燥的時間約爲 3分鐘。 然後，將晶圓10移至裝卸裝置20，進行第二階段的 乾燥步驟，時間約爲3〜5分鐘，至此即完成晶圓10的淸 洗步驟，將晶圓10移除裝卸裝置20。 本發明將原本完全在蒸發與乾燥機台中，進行的乾燥 步驟分爲兩個階段，第一階段的乾燥步驟仍在蒸發與乾燥 機台中進行，第二階段則移至裝卸裝置中進行，整個乾燥 5 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨OX297公釐） (請先閱讀背面之注意事項再填寫本頁) .裝. -訂 _線. 39SS51 2967twf . doc/006 ΒΊ 五、發明説明（f) 過程所花費的時間與習知相同，或需要更長的時間，但晶 圓停留在蒸發與乾燥機台的時間縮短，使得在第三淸洗槽 淸洗完畢之晶圓，欲進入蒸發與乾燥機台的等待時間縮 短，可以大幅提昇整個淸洗過程之產能，最大之產能約爲 300pcs /小時，較採用習知方法得到的產能高出約 20%~30% 。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 (諳先閱讀背面之注意事項再填寫本頁) •裝. 丁 _ 、\s° 線 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐）2967twf.doc / 006 A7 B7 Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs V. Description of the Invention (ί) The present invention relates to a method for cleaning wafers, and more particularly to a method for cleaning and cleaning wafers. Drying can shorten the time of the rinsing process and increase the productivity. It is known that during the cleaning process of 8-inch wafers, a large number of IPA's evaporation / drying machines (Vapor / Dry, V / D) are used, but because the time required for the procedure is too long, the entire machine is Taiwan's production capacity declined. FIG. 1 shows a flowchart of steps for wafer cleaning. Please refer to FIG. 1. First, the wafer 10 is placed in the first rinsing bath 12 containing a chemical cleaning agent, and the time is about 5 minutes. Then, the wafer 10 is taken out and then placed in deionized water. In the second washing bath, the soaking time is about 5 minutes. Then, the wafer 10 is taken out of the second rinsing bath 14 and then placed in the third rinsing bath 16 for about 5 minutes. After that, the wafer 10 is moved to the evaporation and drying machine 18 to perform the evaporation and drying steps. In the evaporation and drying machine 18, the evaporation time is about 6 minutes and the drying time is about 6 minutes. The wafer 10 is moved to the loading and unloading device 20, and thus the cleaning step of the wafer 10 is completed. Due to the conventional method, the residence time of the wafer 10 in the first, second, and third rinsing baths 12, 14 and 16 is only about 5 minutes, while it stays in the evaporation and drying machine 18. It takes about 12 minutes. When the cleaning process is performed again, when the first batch of wafers is moved from the first cleaning tank 12 to the second cleaning tank 14, the second batch of wafers can enter the first cleaning tank 12 and start cleaning. Step, the entire process can be carried out in multiple batches of wafer cleaning. But 'because the time spent on the 18 wafers in the evaporation and drying machine is much longer than the time spent in other cleaning tanks. When the third cleaning tank 16 3 (Please read the precautions on the back before filling (This page) mi-binding. Staple. Thread_ This paper size applies to the Chinese National Standard (CNS) Α4 specification (2 丨 0 parent 297 male 漦) 2967twf.doc / 006 A7 Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 2. Description of the invention (1) When the second batch of wafers has completed the cleaning step, the first batch of wafers will be evaporated and dried on the machine 18; in this way, the subsequent wafers to be cleaned must wait for evaporation and drying. The wafer in the drying machine is removed, and the evaporation and drying process cannot be smoothly performed. Therefore, the time spent in the evaporation and drying machine 18 is the bottleneck of the entire cleaning process, which affects the entire production capacity and the maximum capacity of the entire production capacity is reduced. It is 230pcs / hour. Therefore, the main purpose of the present invention is to provide a method for cleaning wafers, reducing the time spent on evaporation and drying machines, in order to dissolve the stagnation of the wafers during the cleaning process, so that the same process time Within, get the production capacity of Che Fuwen. According to the above and other objects of the present invention, a method for degreasing wafers is proposed. The drying part in the evaporation and drying machine is divided into two stages. The first stage is still performed in the evaporation and drying machine, and the second stage moves to Drying in the loading and unloading device shortens the total time that the wafer stays in the evaporation and drying machine, and reduces the stagnation of the wafer during the cleaning process, which can increase the production capacity to about 300pcs / hour, which is higher than the conventional production capacity. About 20 ~ 30%. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible ', a preferred embodiment is given below, and in conjunction with the accompanying drawings, the detailed description is as follows: Brief description of the drawings: FIG. 1 shows Flow chart of steps for wafer cleaning. Description of the pictograms: 1 〇 Wafer 12 1st washing tank 4 This paper size is suitable for Zhongguanjia ladder (CNS) A4i ^ (21Gx297 public magic (please read the precautions on the back before filling this page) • Loading. Order line S9S351 967twf.doc / 006 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (j) 14 Second cleaning tank 16 Third cleaning tank 18 Evaporation and drying machine 20 Loading and unloading device gMM- Please Referring to FIG. 1, the wafer washing and drying process is still the same as shown in the figure. 'First, the wafer 10 is placed in the first washing tank 12, and the tank contains reactive chemicals to carry out the process. The chemical decontamination time is about 5 minutes. Next, the wafer 10 is taken out from the first decontamination tank 12 and then placed in the second decontamination tank 14. The chemicals remaining on the wafer 10 are removed, and the soaking time is about 5 minutes. After that, the wafer 10 is taken out of the second decontamination tank 14 and then placed in the third decontamination tank 16 for further decontamination. The wafer 10 is about 5 minutes. Next, the wafer 10 is moved from the third guessing and washing tank 16 to the evaporation and drying machine 18 ′. The evaporation and drying steps are performed. In the evaporation and drying machine 18, the evaporation time is about 6 minutes, and the drying time in the first stage is about 3 minutes. Then, the wafer 10 is moved to the loading and unloading device 20 for The drying step in the second stage takes about 3 to 5 minutes. At this point, the cleaning step of the wafer 10 is completed, and the wafer 10 is removed from the loading and unloading device 20. In the present invention, the evaporation The drying step is divided into two stages. The drying step in the first stage is still carried out in the evaporation and drying machine, and the second stage is moved to the loading and unloading device. The entire drying process is based on the Chinese National Standard (CNS) A4 specifications ( 2 丨 OX297mm) (Please read the precautions on the back before filling this page). Installation.-Order_line. 39SS51 2967twf. Doc / 006 ΒΊ 5. Description of the invention (f) The process takes the same time as it is known It may take longer, but the time for the wafers to stay in the evaporation and drying machine is shortened, so that the wafers that have been washed in the third cleaning tank, the waiting time for entering the evaporation and drying machine is shortened, which can greatly reduce Increase the capacity of the entire cleaning process, the maximum capacity is about 300pcs / hour, which is about 20% ~ 30% higher than the capacity obtained by the conventional method. Although the present invention has been disclosed as above with a preferred embodiment, it is not It is used to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be defined as the scope of the attached patent (谙 Please read the precautions on the back before filling this page) • Packing. Ding _ 、 \ s ° Printed by the Central Consumers Bureau of the Ministry of Economic Affairs, Consumer Cooperatives This paper is printed in accordance with China National Standard (CNS) A4 (210X 297) Mm)