TW390032B - Photoelectric conversion apparatus and X-ray image pickup apparatus - Google Patents

Abstract

A photoelectric conversion apparatus comprises a plurality of substrates. Each of the substrates has a plurality of photoelectric conversion elements on a rear surface thereof on a base. A light-absorbing member is privoded on at least one of a front surface and end faces of the substrate.

Description

85U1748 Patent Application Chinese Specification Correction Page A7 B7 June 87, Republic of China 1. Description of Invention () 13 Must have the property of guiding electrons to transparent m 棰 2 6 and the feature of preventing hole injection i i2 4 • Lack Either characteristic causes a reduction in photocurrent. • It is generated or increased in the flux (dark current) without incident light. This results in a decrease in the S / N ratio. • The dark current itself is considered as noise and includes Oscillation of impact noise, that is, quantum noise • Even if this dark current is removed by the value measuring unit 12, the sub-noise accompanying the dark current cannot be reduced. Generally speaking, in order to improve the above characteristics The formation conditions for i calendar 24 and η layer 2 5 and the annealing conditions after forming these layers must be better. • Although the relationship between electrons and holes is opposite to the above relationship, another injection The P layer 2 3 of the prevention book needs to have the same characteristics as above, and the relevant conditions for the P layer 23 must also be optimized. • Generally, the optimal conditions for η 靥 and the optimal conditions for ρ layer are different. , And it is quite difficult to satisfy both Optimal conditions • That is, * the injection prevention layer pledged on two parts of a single optical sensor to form an optical sensor with a high S / N ratio. This also applies to SCHOTT in Figure 5B. Basic type sensor · Printed by the Central Laboratories Bureau of the Ministry of Economic Affairs, Shelley Consumer Cooperative (please read the precautions on the back before filling out this page) Figure 5 The Schottky type sensor in Β uses a Schottky shield as an injection Preventive layer · The use of this device in the work function is between the difference between power down 2 2 and i layer 2 4 • Therefore, the material used for power down 2 22 and the local level of the interface will significantly affect Xiao Characteristics of the special base shield layer • It is so difficult to meet the conditions for the layer • Some studies have pointed out that a thin silicon or metal oxide with a thickness of about 100 A is formed between the ^ electrode 2 2 and the i layer 2 4 Materials or nitride films to improve the characteristics of the Schottky shielding pan. This structure uses a tunneling effect to guide the hole to the lower electrode 2 2 and improve the effect of preventing electron injection i 2 24. This structure is also used in work. Differences in function This paper standard is not used in China National Standard (CNS) A4 specification (210X297mm)! A7 B7 Printed by the Shell Specimen Consumer Cooperative of the Central Sample Bureau of the Ministry of Economic Affairs V. Description of the Invention (!) BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a light, conversion device and an X-ray image pickup device, and more In particular, it relates to a photoelectric conversion device in which most substrates having most photoelectric conversion elements are arranged to perform reading operations in a large area, and an X-ray image pickup device using the photoelectric conversion device. q In the conventional art, a reading system using a lowering optical system and a c-CD type sensor has been used to read an image such as information in an X-ray imaging / image pickup device. With regard to the recent development of photoelectric conversion semiconductor materials using amorphous semiconductors and typified by hydrogenated amorphous silicon (hereinafter referred to as a-S i), there have been significant advances in so-called contact sensors. Progress, which is obtained by forming a photoelectric conversion unit with a large number of photoelectric conversion elements on a large substrate, and can read a substrate source at a magnification of 1X. a_S i can be used not only as a photoelectric conversion semiconductor material for a photoelectric conversion unit, but also as a semiconductor material for a thin film field effect transistor (hereinafter referred to as a TFT). Therefore, many studies have been devoted to forming a signal processing unit on a large area substrate together with a photoelectric conversion element. In addition, since the photoelectric conversion semiconductor layer used for the photoelectric conversion element can be commonly used as the semiconductor layer for the TFT These layers can be formed at the same v time. (Please read the note on the back: write this page first.). Loading., / L · This paper size is in accordance with Chinese National Standards (CNS) A4 specifications (210X297 mm) A7 Bu '-, B7_ I supplement also ▲ V. Description of the invention () 14, and therefore, the material used for the lower electrode 22 is also limited. Furthermore, since this structure uses the opposite property, that is, the injection of electrons and the movement of holes are prevented by the channel removal effect, the oxide or nitride film is limited to a very thin film having a thickness of about 100 A Film • Furthermore, it is difficult to control the thickness and the quality of the film, and the productivity will be reduced. The need to inject a protective layer on both parts will result in low productivity and high cost. The reasons are as follows. The injection prevention layer is very important. Therefore, if a defect is caused by dust or the like in one or two frames, the good characteristics of the optical sensor cannot be obtained. (Note f on the back is to be completed on this page.) The second reason will be explained below with reference to FIG. 6. FIG. 6 is a layer structure of a field effect transistor (TFT) made of a thin semiconductor semiconductor. TFTs are sometimes used as part of a control unit forming a photoelectric conversion device. In 圚 6, the same parts as in circles 5 A and 5 B are denoted by the same reference numerals. * TFT includes a gate insulating film 27 and an upper electrode 6 0. The following sequence describes the method of forming a TFT. Lower electrode. 22 as a gate electrode (G), a gate insulating film 27, a gate 24, a η calendar 25, and an upper electrode 60 as a source and a drain (S and D), which are sequentially formed on an insulating substrate 21 The upper electrode 60 is etched to form a source and a drain electrode. Then, the η layer 25 is etched to form a channel portion. The characteristics of the TFT can be determined by the interface between the gate insulating film 27 and the i layer 24. The state sounded easily. In general * In order to avoid contamination of the interface, these successive results are deposited in the same vacuum. This layer structure will cause some problems in the formation of Xi and optical sensors on the same substrate as the TFT, which will lead to an increase in cost and the paper size applicable to the Chinese National Standard Car (CNS) A4 specification (210X297 mm > -17-A7 ___B7___ V. Description of the Invention (2) When forming a capacitive element such as a capacitor on the same substrate, if the opposite electrodes are insulated from each other *, a semiconductor layer can be formed therebetween. This can constitute a photoelectric conversion element and / or a TFT The deposition order of the film is the same as the deposition order of the film constituting the capacitor element. As a result, the relevant types of films used to form the element can be formed simultaneously in the same process. Therefore, a photoelectric conversion device having a high S / N ratio and lower cost, and has large area, large efficiency and good characteristics. Some researches are also dedicated to the application of photoelectric conversion devices with photoelectric conversion elements arranged in a matrix pattern on a large area substrate to X-ray images The light absorption device of the pick-up device. The Central Printing Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, printed oxygen because the photoelectric conversion device has a large Product and large light absorption surface, it becomes quite difficult to completely remove tiny dust in the manufacturing process (on the substrate, in the process of sinking the amorphous silicon layer, it is peeled off by the wall of the film sinking device Dust: Dust floating in the air during the processing step; and when a metal layer etc. sinks, foreign matter attached to a substrate, etc.) Therefore, an increase in area may lead to the possibility of wiring failure, such as a substrate The short circuit and an open circuit inside the wiring, and errors in related components such as photoelectric conversion elements. Therefore, as the area increases, productivity decreases. As a result, the cost of the photoelectric conversion device increases β In order to solve such problems, A large-area photoelectric conversion device can be manufactured by arranging a large number of photoelectric conversion units. If a large number of photoelectric conversion units are arranged in this way, the area of each substrate will decrease, and as a result, productivity will increase, and the cost of each substrate may also be reduced. ^ Paper size is applicable to China National Ladder Standard (Liyang) 8-4 specification (210 > < 297mm) ~ " -5-A7 B7 Magical minus 10 amendment correction, Fa Ming (18) Phosphors are formed on each cable. • When X-rays are incident on the nuclei * X-rays are converted from phosphors (cs I) into light (represented by dotted arrows), and the light Incident on the photoelectric conversion element • In this way, the phosphor acts as a light converter to receive light having a given wavelength and emit light having a different wavelength. The operation of the photoelectric conversion device is described below with reference to FIGS. 8 to 10, FIG. 1 0 is the time circle of the operation of the device in Figure 8. Yin Jia, an employee consumer cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (read the precautions on the back before filling this page)

First, the high-level signals are applied by the shift registers SR1 and SR2 to control the lines gl to g3 and sgl to sg3. As a result, the switching TFTs T 1 to T 33 and the switches M1 to M3 are activated, and all the photoelectric conversion elements S 1 1 The D electrode to S 3 3 is set to the GND potential (because the input terminal of the integrated detector Amp is set to the GND potential). At the same time, the control circuit RF output updates a level signal to activate the switch SWg. As a result, the G «poles of the photoelectric conversion elements SI 1 to S33 are set to a positive potential by the refresh power supply source V g · Then, all the photoelectric conversion elements S 1 1 to S 3 3 are set in the refresh mode for Update · When the update control circuit RF outputs a low level signal to activate the switch SW s, the G electrodes of all the photoelectric conversion elements S 1 1 to S 3 3 are set to a negative potential by the read power supply V s. As a result, all the photoelectric The conversion elements S 1 1 to S 3 3 are all set in the photoelectric conversion mode. At the same time, the electric carriages C 1 1 to C33 are initialized. In this state, the shift registers SR1 and SR2 apply the low level signals to the control lines g 1 to g 3 and sg 1 to sg3 * result, the switches M1 to M3 for switching T. FT Til to T33 are closed, and All photoelectric conversion elements viewed by DC separation S This paper size is applicable to China National Standard Half (CNS) A4 specifications (210X297 gong) -21-A7 B7 Printed by the Central Consumers' Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. V. Description of the invention < 3) With this arrangement 9 even if most of the substrates—become defective t, only the defective substrates need to be replaced. 0 This can achieve a further reduction in costs. 0 In some cases, it can also achieve protection costs. In the majority of the above-mentioned two-dimensionally arranged photoelectric conversion devices, 9 light to be received (for example, 9 in the example of an X-ray image pickup device, when X-rays from a white X-ray source are incident, a phosphorous Light emitted) is incident on the substrate of the photoelectric conversion element > In order to enter the light absorbing part of the photoelectric conversion element, it will cause damage to the optical characteristics. 9 For example, the resolution of the photoelectric conversion device will be reduced. Summary of the invention The great thing of the present invention is to improve the optical characteristics. For example, The resolution of the large-faced photoelectric conversion device is formed by combining the substrates of most photoelectric conversion elements to solve the problem of receiving light emitted by, for example, a white phosphorous layer. The lower surface and the end portion of the combined substrate are reflected and absorbed. In order to achieve the above-mentioned huge »according to the present invention 9 is provided here-a photoelectric conversion device having a plurality of substrates > each substrate has a majority of photoelectric conversion elements A base on the surface 9 The photoelectric conversion device covers at least the lower surface or the end surface of the substrate A light absorbing member 0 In addition, according to the present invention there is provided an X-ray image pickup device including a photoelectric conversion mechanism including a plurality of substrates 9 each substrate having a plurality of photoelectric conversion elements on a base surface > and a light Absorb J / Ut on at least the lower surface or end surface of the substrate. The X-ray irradiation mechanism is based on the size of the paper and uses the national kneading rate (CNS) A4 specification (210X297 mm) A7 _ _B7_ V. Invention Explanation (,) 4 X-rays, and a light converter to receive X-rays and generate light with different wavelengths. Furthermore, in the above-mentioned device, the substrate has a photoelectric conversion element, and by laminating a first electrode layer * an insulating calendar * -a photoelectric conversion semiconductor layer, it is used to prohibit the injection of carriers of the first conductivity type. A semiconductor layer and a second electrode layer;

The photoelectric conversion mechanism is used to apply an electric field to the photoelectric conversion element in a direction in which the first conductive type carrier generated by the signal light and incident on the photoelectric conversion semiconductor can be held, and the first conductive type Different carriers of the second conductivity type are guided toward the second electrode; and an update mechanism is used to apply an electric field to the photoelectric conversion element in one direction, wherein the carriers of the first conductivity type are formed by the photoelectric conversion semiconductor layer Guided towards the second electrode layer; and

Of a signal detection unit for detecting a carrier of a first conductivity type stored in a photoelectric conversion semiconductor layer or a second conductivity type guided to a second layer when a photoelectric conversion operation is performed by the photoelectric conversion mechanism Carrier. Brief description of the printed drawings of the central government's Zhunyang Beigong Consumer Cooperative. Figure 1 is a plan view of a photoelectric conversion device according to a preferred embodiment of the present invention. Figure 2 is a view taken along line 2-2 of Figure 1 Sectional view; Figure 3 is a schematic view of a device S used to form a light-receiving member used in the present invention. Figures 2A to 4C are used to form a light-absorbing structure paper sheet used in the present invention. Using China's National Standard (CNS) A4 specification (210X297 mm) 7 A7 __B7___ V. Description of the invention 丨 5) Schematic circle of the method; Figures 5 A to 5 C are schematic diagrams used to explain optical conversion elements [Figure 6 is a cross-section of another photoelectric conversion element. FIG. 7 is a graph of productivity and dependence of T 丨 T on a W-insulated HP. FIG. Β is a circuit diagram of the photoelectric conversion device of the present invention. FIG. * 9 Α and 9 Β FIG. 10 is a schematic diagram of a structure of a photoelectric conversion element used in the present invention; FIG. 10 is a driving time of the photoelectric conversion device of the present invention; FIG. 11 is a plan view of a photoelectric conversion device according to an embodiment of the present invention; Photoelectricity according to another embodiment of the present invention The plane 圚 of the changing device; Circle 13 is a schematic circle of the X-ray imaging and image pickup device of the present invention; Figures 14A and 14B are diagrams of a photoelectric conversion device according to another embodiment of the present invention; Figures 15A and 1 5B is a diagram of a photoelectric conversion device according to another embodiment of the present invention; circle 16 is a country of photoelectric conversion devices according to another embodiment of the present invention, and FIG. 17 is a photoelectric conversion device of circle 16 Sectional view of the installation. Figure 18 is a photonics device according to another embodiment of the present invention & flat circle; This paper is commonly used in China National Standard (CNS) A4 size (210X297 mm). smell

Si Note ‘

Order of the Central Government Bureau of the Ministry of Economic Affairs of the Central Government Bureau of Work and Consumer Cooperatives 8 A7 B7, Invention Description (6) Figure 19 is a cross-sectional view of the photoelectric conversion device of circle 18; Figure 20 is the photoelectric conversion device of the present invention Steps of the manufacturing method ® i Luyuan 2 1 is another photoelectric device according to the present invention—Fei'de " example? : Plan view; t Figure 2 2 is the circle of the light-snow conversion device of the present invention; plaque 23 is the flow chart of the method of the post-processing method used in the present invention; Figure 2 4 is the signal used in the present invention-signal The flow of the rational method; Figure 2 5 is the 0 of the data arrangement on the base 1 of the photoelectric conversion device.. Renyuan 26 is a cross-sectional view of the X-ray detection light-electricity conversion equipment of the present invention. : And »2 7 is a light emitting, retransmission_change device according to another implementation of the present invention. ^ A detailed illustration of a preferred embodiment of a plan view. Figure 1 is a photoelectric conversion device according to a preferred embodiment of the present invention. The schematic plan view. Figure 2 is a cross-sectional view taken along line 2_2 of Figure 1-the photoelectric conversion element array 1 has a plurality of substrates 1-1, 1-2, 1-3, and 1-4. Each substrate has a group of photoelectric conversion elements on its surface. 1 foundation 2 supporting substrates 1-1, 1-2, 1-3 and 1-4 4 four substrates 1-1 to 1-4 fixed and bonded to the basic paper scale with adhesive 3 Applicable to China National Standards (CNS) A4 specifications (210 X 297 mm) n (Please read the f fact sheet on the back) Printed on the A7 __B7__ by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the Invention (7) Basics 2. In the present invention, the adhesive 3 serves as a light-shielding member or an anti-reflection member 2. For example, incident light from the substrate (1-1 to 1-4) is absorbed by the adhesive \ 3 on the front substrate surface side. This prevents light from being reflected from the front substrate surface and incident on the photoelectric conversion element group on the rear substrate surface side (not shown). This function is an anti-reflection function. In addition, the adhesive 3 is used to absorb incident light, so that the incident light from the side surface (end surface) of the device can avoid passing through the adhesive 3 and reach the photoelectric conversion element on the rear substrate surface side. Group • Similarly, the adhesive 3 absorbs the incident light from the front surface of the foundation 2 to prevent the light on the surface side after the foundation 2 from reaching the photoelectric conversion element group on the rear substrate surface via the adhesive 3. This function is a shading function. In order to achieve the above-mentioned anti-reflection and light-shielding functions, the adhesive 3 is composed of a light-absorbing material, which can absorb light received by the photoelectric conversion element. This luminous absorbing material does not need to absorb light of all wavelengths, but only absorbs light components that are received by the ULAJi transducer and become optical components when optically converted. "Printed by the Central Procurement Bureau of the Ministry of Economic Affairs. In the photoelectric conversion device of the radiographic image pickup device, it is sufficient if the light absorbing material can absorb the light emitted by the phosphor which is used as a photo-binding device. The description is as follows. Therefore, the light absorbing material used in the present invention may be a black material or a material whose color is complementary to the color of the light received by the photoelectric conversion element. In the above example, the adhesive is used as the light absorbing material. However, the function of the adhesive and the function of the light absorbing material can be separated from each other. As for the paper size used in the present invention, it is applicable to Chinese B homes (CNS > A4 size (210X297mm) -10-A7 B7 V. Description of the invention (8) For the material of the light absorbing member, such as metal Inorganic materials, materials of oxides, or organic materials such as resins. A method for forming a light-absorbing member made of an organic material includes a method of using a dye to directly color a resin, and an appropriate mixture of a resin and a light-absorbing pigment. Method: As for the method which is usually easiest to implement, it is best to use a method of appropriately mixing a resin and a pigment to obtain a desired hue.

For the type of pigments used, the following organic pigments can be used: nitro colorants, azo pigments, indanthrene, thioindigo perynone, brahman, diazepam, sleeping DY steep, sedge flower Green, different air, quinophth.l one-based pigments, etc. The following inorganic pigments can also be used: black, chrome yellow, cadmium yellow, cl over mill-ion (orange), red iron oxide, vermilion oxide, red lead, chrome red, mineral purple, etc. Cobalt Blue, Cobalt Green, Chromium Oxide (Green), Viridian (Green), etc. 4 According to the oscillation wavelength of phosphorus, by appropriately selecting the above pigments, a light absorbing member with a desired hue or Black light absorbing member. Printed by the Consumer Cooperative of the Central Government Bureau of the Ministry of Economic Affairs For the resin used in the light absorbing member in the present invention, an epoxy resin, an acrylic resin, and a silicone resin can be used. For an epoxy resin, BAE can be used Epoxy resins act as a condensate of bisphenol A and chloromethoxypropane, which is actually the most commonly used. In addition, for resins containing this resin as the main component, the following resins can be used: bisphenol F, its homologues, halogenated resins, by introducing an epoxy group into a polyol, a dimer acid, and a trimer Acid, or resin obtained from novolac resin containing chloromethoxetane, by introducing epoxy group into polymer paper with peroxides. Applicable to standard papers _ due to the family standard rate (CNS) A4 specification (210X297 Mm) A7 _. B7_ V. Description of the invention 丨 9) Resin derived from olefin, and epoxy resin called cycloaliphatic epoxy resin. The use of B A E epoxy resin has been accompanied by sufficient research on the physical properties of the hardening material of each hardener. Qin here has sufficient information on B A E epoxy resin. And therefore this material can be used safely. Regarding the hardener, one of the following hardeners can be used to obtain an epoxy resin having characteristics suitable for a coating step: diethylenetriamine, n-aminoethylpiperazine, benzylmethylamine, toluene Diamine, diaminodiphenylmethane, diaminodiphenylethane, polyamidoamine resin, diaminofluorene, boron trifluoride • monoethylamine, methylimidazole, phthalic anhydride, hexahydrophthalic anhydride , Methyle (hyenadic) anhydride, pyromellitic anhydride, chloren-dic (anhydride), etc. • * As far as acrylic resins are concerned, there are three types of resins with different polymerization types: entrapped polymers obtained by polymerizing monomers or slugs, granular resins obtained by suspension polymerization, and the use of an extractor. A granular resin obtained from a powder formed by suspension polymerization. One of these resins can be selected and used which is most suitable for a coating step. In the Ministry of Economic Affairs, the Ministry of Economic Affairs and the Ministry of Economic Affairs of the People's Republic of China are responsible for the work. «For silicone resins, methyl silicone resins using trichlorosilane and dichlorosilane, phenolic silicone resins, and silicone alcohol resins can be used. An appropriate resin can be selected and used in accordance with the coating method selected. For the method for arranging the light absorbing member in a predetermined position in the present invention, a sputtering method, a vacuum deposition method, a CVD method, etc. can be used. Medium—Inorganic light absorbing layer on a substrate. For the method of forming an organic light absorbing layer, a spin coating of this paper can be used, using China National Standard (CNS) A4 specification (210X297 mm) -12- A7 B7 Printed by the Shell Standard Consumer Cooperative of the Ministry of Economic Affairs of the People's Republic of China. 5. Description of the invention (10) Method 9 Screen coating method »Screen printing method> Or conversion method 9 such as offset printing or using one of the spreaders Coating methods, etc. • The plating method is described in detail below. Figure 3 shows the formation of a metal oxide containing substrate on the substrate 1 2 by sputtering. A diagram of the mold forming device on the surface. As shown in FIG. 3, the 9-chamber contains-a heater 2 0 1 to heat the substrate 1 0 2 9 a holder 2 0 2 to hold the substrate 1 0 2 9 and a target (T a 2 〇3) 1 0 5 as the light absorbing layer 3 0 1 is placed before the substrate 1 2 and the side surface 0 is set to the holder 2 0 2 so that the opposite surface of the photoelectric conversion element surface 1 0 1 faces the target 1 0 5 9 chamber Pump the chamber to a vacuum of about 1 X 1 0 -β Τ 0 rr. Under this vacuum, fill A Γ gas into the chamber to 5 m T 0 RR 0 and then the heater 2 0 1 is charged to heat The substrate 1 0 2 is supplied by a power source rrfag if the thinker PW akg applies a high-frequency voltage to cause a glow discharge between the target 105 and the substrate 10 2 to cause the target 102 and the side (end face of the substrate 102). ) A light absorbing layer is formed on the surface 3 0 1 0 The coating of the light absorbing chirp used in the present invention is described below with reference to FIGS. 4A and 4C. Method and printing method 〇 In this example ♦ A light absorbing layer is formed before and on the side surface of the glass substrate. Fig. 4A shows how to use the sprayer 2 0 3 in the coating method to apply-. Black resin 1 0 6 m Used before the glass substrate 1 0 2 and the side surface 圚 4 B is how to use a brush 2 0 4 to apply the black resin 1 0 6 to the glass substrate 1 0 2 before and the side surface • Please read the note of the back Λ first. The bound pages of the paper again use the Chinese National Standard (CNS) A4 specification (210X297 mm) -13-V. Description of the invention (11 A7 B7 Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Consumer Work Cooperative, Figure 4C A screen printing plate 2 0 5 was used to apply the black resin 10 6 to the front surface of the substrate 1 2. The method of combining most glass substrates to a common basis includes, by the methods described above, namely, a plating method, a printing method, such as a coating method, combining a majority of substrates before and after forming a light absorbing layer on the glass substrate and side surfaces. To the foundation containing the adhesive. If the light-absorbing fluorene is also used as an adhesive ', the following method can be used. In this method, after the light-absorbing adhesive is applied to the surface of the foundation, most of the substrate is mounted on the foundation, and the adhesive is hardened. Β The structure of the photoelectric conversion element of the present invention will be described below. G 5A to 5C are given Structure of Optical Sensors ^ Xie Wei 5 A to 5 C are the structures of conventional optical sensors. Fig. 5 < to 5 layer structure of the South optical sensor. Figure 5C shows these typical driving methods in common. The sensors in Figures 5 A and 5 B are photodiode-type optical sensors. The sensor in FIG. 5A is a P I N type. The sensor in Figure 5B is a Schottky type. The inductor in FIG. 5A includes an insulating substrate 21, a lower electrode 22, a p-type semiconductor layer (P layer) 23, an intrinsic semiconductor layer (i layer) 24, and an n-type semiconductor layer (ri layer) 25), And a transparent pole 2 6 · Except for the P layer 2 3, the sensor in Fig. 5B has the same components as the sensor in Fig. 5A. In the Schottky type sensor of FIG. 5B, an appropriate material is selected for the lower electrode 2 2 to form a Schottky shield, so * no electrons are injected into the i-layer 2 4 from the lower electrode 22. The structure in FIG. 5C includes an optical sensor 10 as a symbol representing the above-mentioned optical sensor, a power supply 11, and, for example, current reading, please read the note of back A—h binding This paper size is applicable to China Ladder standard (CNS) A4 specification (210X297 mm) -14-_B7_ V. Description of the invention 丨 12) Detection unit of the printed device of the Central Bureau of the Ministry of Economic Affairs of the Bayer Consumer Cooperative 1 2 · In the optical sensor 1 0 The direction indicated by * C # in the middle corresponds to the transparent electrode 26 side in Figs. 5A and 5B, and the direction indicated by the direction corresponds to the side of the lower electrode 22. The power supply 11 is set to apply a positive voltage to the relevant side, the C # side. The operation of this structure is briefly explained below. When light is incident from the directions shown by the arrows in Figs. 5A and 5B and reaches the i-layer 24, the light is absorbed to generate electrons and holes. Since the electric field is applied from the power supply 11 to the i-layer 24, the electrons pass through the * C 'side, that is, the n-layer 25, and move to the transparent electrode 26, and the hole moves to the' A # side, that is, the lower electrode 22 . That is, the photoelectric flows into the optical sensor 10. When no light is incident, no electrons or holes are generated in the i-layer 24. In addition, the η layer 25 serves as a hole injection prevention layer, and the P layer 23 in the PI and N type sensors in FIG. 5A and the Schottky layer in the Schottky type sensors in FIG. 5B. Electron injection prevention layer. Therefore, the holes in the transparent electrode 26 and the electrons in the lower electrode 22 cannot move, and therefore no current flows. Therefore, a change in current occurs depending on the presence or absence of incident light. If the change is detected by the detection unit 12 in Fig. 5C, the construction operation is regarded as an optical sensor. However, when the conventional optical sensor is used, it is quite difficult to manufacture a photoelectric conversion device having a 髙 S / N ratio at low cost. The rationale for this argument is as follows. The first reason is that the PIN-type sensor in FIG. 5A and the Schottky-type sensor in FIG. 5B require injection prevention layers in both parts. In the P IN type sensor of Figure 5A, the η layer as the injection prevention layer 2 5 is required to be the standard of the paper. The standard is China National Standards (CNS) A4 (210X297 mm). -15-85U1748 Patent Application Chinese Correction page of the manual A7 B7 June 87, Republic of China 5. Description of the invention (13) It must have the property of guiding electrons to transparent m 棰 2 6 and the feature of preventing hole injection into i 厝 2 4 • The absence of any feature will cause photocurrent Decrease or increase or decrease in the incident current (dark current), which causes the S / N ratio to decrease. This dark current itself is considered as noise and includes oscillations that constitute shock noise. That is, quantum noise • Even if this dark current is removed by the value measurement unit 12, the sub-noise accompanying the dark current cannot be reduced. Generally speaking, in order to improve the above characteristics, it is used for i calendar 24 and The formation conditions of the η layer 2 5 and the annealing conditions after the formation of these layers must be better. • Although the relationship between the electrons and the holes is opposite to the above relationship, another P layer 2 of the injection prevention book 2 3 Need to have the same characteristics as above for The relevant conditions for layer 23 must also be optimized. • In general, the optimal conditions for η 靥 and the optimal conditions for ρ layer are different, and it is quite difficult to satisfy the optimal conditions for both layers at the same time. Although the injection prevention layer on the two parts of the optical sensor is used to form an optical sensor with a high S / N ratio, this also applies to the Schottky type sensor in Figure 5B. Central Ministry of Economic Affairs 经济Printed by the Quasi-Beige Consumer Cooperative (please read the precautions on the back before filling out this page) Figure 5 The Schottky type sensor in Β uses a Schottky shield, which acts as an injection prevention layer The difference between power down 捶 2 2 and i layer 2 4 • Therefore, the material used for power down 捶 2 2 and the local level of the interface will significantly affect the characteristics of the Schottky shielding layer. • So equivalent Difficult to meet the conditions for the layer • Some studies have pointed out that a thin silicon or metal oxide or nitride film with a thickness of about 100 A is formed between the " ^ electrode 2 2 and the i layer 2 4 to improve the Schott Characteristics of the base shield Pan • This construction uses a tunnel effect to guide the cavity to the lower electrode 2 2, and the effect of improving the prevention of electron injection i 靥 2 4 • This structure is also used in the difference in work function The paper size is in accordance with China National Standards (CNS) A4 specifications (210X297 mm)! A7 Bu '― ,, Positive B7_ I complement also ▲ V. Description of the invention () 14, and therefore, the material used for the lower electrode 2 2 is also limited. Furthermore, since this structure uses the opposite property, that is, the injection of electrons and the movement of holes are prevented by the channel removal effect, the oxide or nitride film is limited to a very thin film having a thickness of about 100 A Film • Furthermore, it is difficult to control the thickness and the quality of the film, and the productivity will be reduced. The need to inject a protective layer on both parts will result in low productivity and high cost. The reasons are as follows. The injection prevention layer is very important. Therefore, if a defect is caused by dust or the like in one or two frames, the good characteristics of the optical sensor cannot be obtained. (Note f on the back is to be completed on this page.) The second reason will be explained below with reference to FIG. 6. FIG. 6 is a layer structure of a field effect transistor (TFT) made of a thin semiconductor semiconductor. TFTs are sometimes used as part of a control unit forming a photoelectric conversion device. In 圚 6, the same parts as in circles 5 A and 5 B are denoted by the same reference numerals. * TFT includes a gate insulating film 27 and an upper electrode 6 0. The following sequence describes the method of forming a TFT. Lower electrode. 22 as a gate electrode (G), a gate insulating film 27, a gate 24, a η calendar 25, and an upper electrode 60 as a source and a drain (S and D), which are sequentially formed on an insulating substrate 21 The upper electrode 60 is etched to form a source and a drain electrode. Then, the η layer 25 is etched to form a channel portion. The characteristics of the TFT can be determined by the interface between the gate insulating film 27 and the i layer 24. The state sounded easily. In general * In order to avoid contamination of the interface, these successive results are deposited in the same vacuum. This layer structure will cause some problems in the formation of Xi and optical sensors on the same substrate as the TFT, which will lead to an increase in cost and the paper size applicable to the Chinese National Standard Car (CNS) A4 specification (210X297 mm > -17-A7 B7 printed by Real Consumer Cooperatives of the Central Bureau of the Ministry of Economic Affairs V. Description of the invention (15) The characteristics are broken * This is because of the layer structure and TFT of the conventional sensors in circles 5 A and 5 B The layer structure is different. More specifically, the PIN type sensor in FIG. 5A has an electrical f / p layer / i layer / η 靥 / electrode structure, and the Schottky type sensor in FIG. 5B has electrodes. / i layer / η 靥 / electrode structure. In contrast, a TFT has an electrode / insulating layer / i layer / η layer / electrode structure. That is, these structures cannot be formed in the same process. Complicated processes can cause Decrease in productivity and increase in cost. In order to share the i 靥 / η layer, an etching process is required for the gate insulating film 27 or the ρ layer 23. Therefore, the ρ layer 23 (which is one of the above-mentioned optical sensors) is implanted to prevent 厝Important layer) and i layer 2 4 cannot be formed in the same vacuum, or The interface between the gate insulating film 27 (which is very important for the TFT) and the i-layer 24 is contaminated when the gate insulating film is etched, which leads to a deterioration in characteristics and a reduction in the S / N ratio. The order of the layers formed, this structure, which has oxidation

Or a nitride film is formed between the lower electrode 22 and the i-layer 24 to improve the characteristics of the Schottky-type inductor in 圔 5B, which is the same structure as that in FIG. However, as described above, the oxide or nitride film needs to have a thickness of about 100 A, and therefore it is difficult to use it as a gate insulating film. Fig. 7 is a result obtained by experiments on the productivity of T F T related to the gate insulating film. When the thickness of the gate insulating film is below 100 Å, the productivity drops sharply. With a thickness of 8 0 0A, the productivity is about 30%. When the thickness is 5 0 0A, the productivity is 0%. When the thickness is 2 0 0A, even the operation of the TFT cannot be detected. This kind of data clearly shows that it is very difficult to use the optical sensor's oxidation or nitride film to remove the channel. Used as TFT's gate insulation film (the size of the paper method is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ~ _ ~ -18-(Please read the precautions on the back and then 3 pages)

Order A7 B7 Printed by the Central Sample Rate Office of the Ministry of Economic Affairs of the Consumers Cooperative Cooperative V. Invention Description (16) Need to isolate electrons and holes) 9 In addition 9 Although f is not shown with good characteristics and small 1: Capacitor element with leakage current (below (Referred to as a capacitor) »It is a component that needs to obtain the value of the charge or current, like the structure of a conventional optical sensor > It is difficult to form it with the same structure. Since the capacitor wants to store electricity between two electrodes Therefore, m should be used as a layer to prevent the movement of electrons and holes as an interposer between the electrodes. However, the conventional optical sensor uses only a semiconductor interposed between the electrodes. Therefore, it is quite difficult to obtain Characteristics of the interposer, which is thermally stable and has a small leakage current. If a TFT and a capacitor (which is an important element of a photoelectric conversion device) are being processed When showing poor matching with characteristics, many complicated steps are required to form an optical system with many one-dimensional or two-dimensional optical sensing Act% devices and designed to sequentially detect optical signals. Therefore, the productivity is very low, which leads to low cost. A very serious problem when forming a high-efficiency and multifunctional device. The following photoelectric conversion device can solve the above problems and is suitable for use in the present invention. Figure 1 1 is the entire photoelectric conversion device used in the present invention. Circuit diagram of the structure. Figure 9A is a plan view of the components of the photoelectric conversion device—pixels. The plaque 9B is a cross-sectional view taken along the line 9B-9B of FIG. 9A. Referring to FIG. 8, this device Including photoelectric conversion elements S 1 1 to S3 3 0 The lower and upper electrode sides of each element are indicated as% G and% D " 0 Means also includes storage capacitor 11 C A4 size conversion to C 3 3 T F T 1 1 under this sheet with scales Bu Chinese National Standard (CNS) (210X297 mm)

-19-V. Description of Invention (17 A7 B7

To T 3 3, one reads the power supply V and one updates the power supply.

Vg · These power supplies are connected to the G electrodes of all the photoelectric conversion elements S 1 1 to S 3 1 via switches SWs and SWg, respectively. The switch SWs is connected to an update control circuit RF via an inverter, and the switch SWg is directly connected to the update control circuit RF. The switch SWg is controlled to remain ON during the update interval. The element is a photoelectric conversion element, a capacitor Composition with a TFT. The signal output from each pixel is connected to a detection circuit IC through a signal line SIG. In the photoelectric conversion device previously proposed by the present inventor, all nine pixels are divided into three blocks, and the output of the three pixels from each block is simultaneously transmitted through each signal line SIG, and the output is detected by the hip circuit The IC sequentially converts to an output (Vout). The three pixels in each block are arranged horizontally, and the three blocks are sequentially arranged in the vertical direction, so that the pixels are arranged in two dimensions. The part enclosed in the dotted line in Fig. 8 is formed on a single insulating substrate with a large area. The circle 9 A is a plan view of the part of the first element related to the above part. Fig. 9B is a cross-sectional view taken along line 9B-9B of Fig. 9A. This structure includes a photoelectric conversion element S 1 1, a TFT, T11, a capacitor C11, and a signal line SIG. In the optical-to-electrical conversion device previously proposed by the applicant, the capacitor C 1 1 and the photoelectric conversion element S 1 1 are not isolated from each other, and the capacitor C 1 1 is formed by increasing the area of the electrode of the photoelectric conversion element S 1 1 . Since each photoelectric conversion and each capacitor in this embodiment has the same layer structure, this formation can be used. This is the characteristic of the photoelectric conversion device previously proposed by the applicant. In addition, passive silicon nitride film (S i N) and, for example, iodized (C s I) (please read the ii- * r matters on the back first-installation-and then f). National Standard (CNS) A4 (210X297 mm) -20-A7 B7 Phantom Negative 10 Correction Supplement, V. Fat (18) Phosphors are formed on each cable • When X-ray_incidence on When it is on a surface * X-rays are converted into light by the phosphor (cs I) (represented by the dotted arrow), and the light is incident on the photoelectric conversion element. In this way, the phosphor acts as a light converter to receive Wavelength of light and emission of light with different wavelengths · The operation of the photoelectric conversion device will be described below with reference to FIGS. 8 to 10, and FIG. 10 is a time circle of the operation of the device in FIG. (Read the precautions on the back before filling this page)

First, the high-level signals are applied by the shift registers SR1 and SR2 to control the lines gl to g3 and sgl to sg3. As a result, the switching TFTs T 1 to T 33 and the switches M1 to M3 are activated, and all the photoelectric conversion elements S 1 1 The D electrode to S 3 3 is set to the GND potential (because the input terminal of the integrated detector Amp is set to the GND potential). At the same time, the control circuit RF output updates a level signal to activate the switch SWg. As a result, the G «poles of the photoelectric conversion elements SI 1 to S33 are set to a positive potential by the refresh power supply source V g · Then, all the photoelectric conversion elements S 1 1 to S 3 3 are set in the refresh mode for Update · When the update control circuit RF outputs a low level signal to activate the switch SW s, the G electrodes of all the photoelectric conversion elements S 1 1 to S 3 3 are set to a negative potential by the read power supply V s. As a result, all the photoelectric The conversion elements S 1 1 to S 3 3 are all set in the photoelectric conversion mode. At the same time, the electric carriages C 1 1 to C33 are initialized. In this state, the shift registers SR1 and SR2 apply the low level signals to the control lines g 1 to g 3 and sg 1 to sg3 * result, the switches M1 to M3 for switching T. FT Til to T33 are closed, and All photoelectric conversion elements viewed by DC separation S This paper size is applicable to China National Standard Half (CNS) A4 specifications (210X297 cm) -21-Central Samples Bureau of the Ministry of Economic Affairs Λ Industrial Consumption Cooperation Du Yin oxygen A7 _B7_ Description of the invention (19) The D electrodes of 1 1 to S 3 3 are set to the open state. However, the potential of the D electrode is maintained by the capacitors Cl 1 to C33. However, at this time, no X. ray is incident, and light is not incident. On any of the photoelectric conversion elements S 1 1 to S 3 3. Therefore, no photocurrent flows. • When X-rays are emitted in a pulse-balanced manner and traverse a human body to be incident on the phosphor C s I, the X-rays are converted into light. This light is incident on each of the photoelectric conversion elements S 1 1 to S 3 3. This light contains information about the internal structure of the human body and the like. The photocurrent generated by the light is stored in the capacitors C 1 1 to C 3 3 as electric charges after the X-rays are incident, and is held. Then, the shift register SR1 applies a high-level control pulse to the control line gl, and the shift register SR2 applies the control pulse to the control lines s1 to s3. As a result, the data v1 to v3 are sequentially output through the switches M1 to M3 of the switching TFTs T11 to T33. Similarly, under the control of the shift registers SR1 and SR2, other optical signals are output sequentially. In this way, Two-dimensional data v 1 to v 9 of the internal structure of the human body can be obtained. Through the above operations, a still image can be obtained. However, when a moving image is obtained, the above operations can be repeated. In the photoelectric conversion device, the G electrodes of the photoelectric conversion element are commonly connected, and the control line is controlled to be set to update the power supply via the switches SWg and SWs. The potential of V g and the potential of reading power supply V s • Therefore, all photoelectric conversion elements can be switched to update mode or photoelectric conversion mode at one time • Therefore, one TF T per pixel can be obtained without complicated control Optical output · In this device, nine pixels are arranged two-dimensionally into a 3 X 3 matrix, and please read the note of ib-

I

The size of the paper is applicable to China's national rubbing rate (CNS) A4 specification (210X297 mm) -22-A7 B7 Printed by the Consumers 'Cooperatives of the Central Government Bureau of the Ministry of Economic Affairs-V. Description of the invention <' 20) Three drawings The element data is converted and output three times at the same time * But the invention is not limited to this. If 2 0 0 0 X 2 0 0 0, the two-dimensional arrangement of the elements is such that there are 5 X 5 pixels per 1 mm 2 arrangement. You get a 4 3 cm X 4 0 C m X-ray detector. If this detector and X-ray generator are combined with '9 instead of X-ray film to form an X-ray device »This device can be used for X-ray chest examinations and chest cancer examinations« The output from the device can be Real-time display on a CRT. In addition, this output can also be converted into digital treasures and according to the invention 9 a computer can be used to perform the image processing of the data »to convert it to-output. O this data can also be Stored in a magneto-optical disc and can also retrieve the sensitivity of previous image detectors in real time 1 degree higher than the m sensitivity of the film, so 9 can obtain clear images of weak X-rays that have almost no effect on the human body. Figures 11 and 12 are plan views of the structure of a detector with 20000x2000 pixels. When forming a detector with 20000 2 0 0 0, the number of components included in the part enclosed by the dotted line in FIG. 8 can be increased in the vertical and horizontal directions. However, in this example, the 2 0 0 0 control line is needed, that is, lines g 1 to S 2 0 0 0 and 2 0 0 0. The signal line SIG is also the line si S 1 to S ig 2 0 0 0 0. In addition, the shift The register SR 1 and the detection integrated circuit IC need to perform 2 0 0 0 signal control / processing, and, therefore, the size of the device will increase. If this process is performed using a wafer element 9 — · the size of the wafer will become very large • this results in disadvantages in productivity and cost, etc. 0 due to the foregoing description »2 0 0 0 shift register SR 1 Dividable into 20 wafers (SR 1 — HSR 1 — 2 0) * Each includes 100 pieces of paper size Applicable to China National Standard (CNS) A4 specification (210X297 mm)

-23-A7 B7 Seal of the Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives. 5. Description of the invention [21] Shift register 0 Similar 9 2 0 0 0 Detect m The body circuit can also be divided into 20 The chips (IC 1 to IC 2 0) 9 each include 100 processing circuits. Refer to Figure 1 1 9 2 0 chips (SR 1 — 1 to SR 1 — 2 0) are mounted on the lower side (D) 9 and 1 0 0 control lines or 1 0 0 signal lines are connected to each chip by wiring bonding 0 Reference Figure 1 1 Among them (omitting the description 9 connected to the external unit and omitting the switches SW g 9 SWS and SWX, the source is for the description of the trig responder VS 1 t VS 2 and RF 0. Although it is composed of the IC 1 to IC 2 0 20 outputs (V 0 U t) can be obtained. These outputs can also be combined into an output through a switch, etc., or 20 outputs can also be directly output for parallel processing. The photoelectric conversion element is formed on four substrates. 1 1-2 1 on 3 and 1-4 0 These four substrates are then combined on — common base 2 on 9 FIG. 12 shows another configuration 0 Refer to FIG. 1 2 1 0 wafer (SR 1-1 to SR 1 — 1 0) Can be mounted on the left (L) 1 0 chip (SR 1-1 1 to SR 1 — 2 0) can be mounted on the right (R) > 1 0 chip (IC 1 to IC 1 0) are mounted on the upper side (L) »and 10 chips (IC 1 1 to IC 2 0) are mounted on the lower side (D) • In this configuration, since the related wires are distributed in 1 0 0 0 units Up 9 down, left 9 right (U 9 DL and R) 9 The density of the wires on each side is reduced and the bonding density of the wires on each side is also reduced »This results in an increase in productivity 9 These lines are distributed to make the line g 1 »G 3 $ S 5…« ♦ ♦ g 1 9 9 9 is distributed on the left (L) > and line 8 2 > g 4 • g 6… «· · g 2 0 0 0 is distributed on the right (R) , That is, 9 even-numbered control lines distributed in this paper rhyme are used by the Chinese state to prevent obstacles (then Xiao >> A7 B7 22 V. Description of the invention (on the left (L), and odd-numbered control lines on the right (R).) Distribution, because the related wires are wired and arranged at equal intervals, density irregularities do not occur. As a result, productivity can be further increased. It is also sufficient if the remaining lines are distributed on the upper side (L) and the lower side (D) in the same manner as described above. According to another embodiment, although not shown, the lines g 1 to glOO, g201 to gOO .. ....... gl801 to

gl900 is distributed on the left (L), and lines glOl to gr200, g301 to g400 ......... gl901 to g2000 are distributed on the right (R). That is, the control lines of successive performances are distributed to each chip, and such line groups are alternately distributed on the right and left (R and L). With this distribution, continuous performance can be controlled in one chip, and the driving time can be easily set. Therefore, a simple and inexpensive circuit can be used. The distribution of the lines on the upper side (L) and the lower side (D) is also The execution is performed in the same manner as described above, so that successive processing can be performed, and an inexpensive circuit can be used. In this device, the photoelectric conversion elements are formed on four substrates 1-1 * 1-2 * 1-3 and 1-4, and these four substrates can be combined on a common substrate 2. When the industrial and consumer cooperatives are printed on the circuit enclosed by the dotted line and formed on each substrate, by mounting a chip on four substrates or mounting four circuit boards 1 to 1 to 1-4 and a chip on a base 2 The structure shown in Figs. 11 and 12 can be obtained. Alternatively, the chip may be mounted on a flexible board, and the board may be bonded to a circuit board enclosed in a dotted line. As described above, a photoelectric conversion device including a large number of elements and having a large area cannot be manufactured in a complicated step using a conventional sensor. However, the national paper standard (CNS > A4 size (210X297 mm)) applies to the manufacturing of this paper. -25-A7 B7 Printed by the Central Ministry of Economic Affairs and the Consumer Rental Cooperative, Co., Ltd. 5. Description of the invention, 23) Figures 8 and 1 The related elements in the steps of the photoelectric conversion device shown by 0 are formed by a common film at the same time. Therefore, the number of steps is very small and only simple steps are required. Therefore, high productivity can be achieved, and large surfaces can be manufactured.稹 1 High-efficiency photoelectric conversion device • In addition »Because capacitors and photoelectric conversion elements can be formed in the same element * The number of elements can be reduced substantially --- half 0 This can achieve a further increase in productivity. According to the above-mentioned photoelectricity Conversion device »Each photoelectric conversion element can only detect the amount of incident light with the .injection prevention layer. Therefore» Here, a low-cost photoelectric conversion device can be provided, which can help the manufacturer The optimization of the method allows an increase in productivity > reducing manufacturing costs and having an S / N ratio of 髙 In addition > Since no tunneling effect or η-teg shield is used for the first electrode layer / insulating layer / photoelectric conversion semiconductor餍 The electrode material can be arbitrarily selected and therefore the degree of whiteness in controlling the thickness of the insulating layer is quite high. Furthermore, for example, the switching element and / or the capacitor element of the thin film field effect transistor (TFFT) exhibit good matching properties. And have the same film structure. Therefore, these films can be simultaneously formed as a common film. In addition, the photoelectric conversion film and the TFT should be formed in the same vacuum to realize a photoelectric conversion device with a high S / N ratio at low cost. 〇 Furthermore, since each capacitor has an insulating layer as an interposer, it can provide a high-performance photoelectric conversion device whose output can be The score of the optical information sheet obtained from the photoelectric conversion element with a simple structure. Therefore, it can provide low cost. »Large area> High performance facsimile device and X-ray device have good characteristics. Figure 1 3 is used to explain Including the above-mentioned photoelectric conversion device of the present invention, the paper size is in accordance with China National Standards (CNS) A4 (210X297 mm) -26-A7 B7 24 V. Description of the invention (Phosphors and X-ray image pickup of X-ray sources A schematic diagram of an embodiment of the device, and the use of a photoelectric conversion device to convert X-rays transmitted through the human body into an image signal. The device includes an X-ray source 31, a target 3 2, a grid 3 3 for removing scattered light from the target 32, a phosphor 3 4, a base 3 5, and the photoelectric conversion device 3 6 of the present invention. .

X-rays emitted from the X-ray source 31 are irradiated on the target 32, and transmitted X-rays are received by a sensor unit. The scattered light from target 32 is removed in a grid. The transmitted X-rays received by the sensor unit are absorbed by the phosphor and converted into visible light. This visible light is received by the photoelectric conversion device as an image signal and processed by an external signal processing unit (not shown). In this example, with the photoelectric conversion device of the present invention, the light incident on the substrate g of the photoelectric conversion device is absorbed by a light absorbing layer in front of the substrate and / or on the end face, thereby preventing resolution and the like. In the "Long Zheng", compared with the example of using the conventional photoelectric conversion, the ratio A can be obtained with a high resolution X-ray imaging. Printed by the WC Industry Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs «. [First Embodiment] Figure 14A is An illustration of a photoelectric conversion device according to a first embodiment of the present invention.

The glass substrate 1 on which the photoelectric conversion element 4 is mounted is bonded to a base 2 as described below. As shown by circle 1 4 B, the black adhesive 3 is applied to the substrate 2 at the position (four positions) where the glass substrate 1 is bonded. As shown in Figure 1 4A, the size of the paper is in accordance with the Chinese national standard (CNS > A4 size (210X297 mm) -27-A7 ___B7 _ V. The description of the invention (25), as opposed to the surface on which the photoelectric conversion element 4 is installed The opposite surface of each glass substrate is provided on the adhesive 3. In this embodiment, the black adhesive 3 as a light absorbing layer is formed only on the lower surface of each substrate 1. When incident from the end surface of the substrate 1 This structure is particularly effective when external light is negligible. [Second Embodiment] FIG. 15A is an illustration of a device according to a second embodiment of the present invention. A glass substrate 1 on which a photoelectric conversion element 4 is mounted is combined. To a substrate 2 is described below. As shown in Figure 1 5B, a spreader is used to apply an adhesive 3 to the position of the base 2 to which the glass substrate 1 is to be bonded. As shown in Figure 1 5 A, relative to the formation The opposite surface of each glass substrate on the surface of the photoelectric conversion element 4 is provided on the adhesive 3. A light absorbing layer 5 is formed before and on the side surfaces of each glass substrate 1 before being bonded to the base 2. Because the light absorbing layer 5 is formed on the end face of the substrate 1, The device can prevent external light from incident on the end face of the substrate 1. [Third Embodiment] Fig. 16 is a plan view of the overall structure of a photoelectric conversion device according to a third embodiment of the present invention. Cross-section view 〇Refer to 616 and ， 17, four base papers on which photoelectric conversion elements are installed. Dimensions and standards (CNS > A4 specifications (2 丨 0 > < 297 mm)

Please read the S item on the back first

Ordered by the Central Standards Bureau of the Ministry of Economic Affairs of the Shellfish Consumer Cooperatives Co., Ltd. -28 _ A7 B7 Printed by the Central Laboratories of the Ministry of Economic Affairs of the Gasoline Consumer Cooperatives. 5. Description of the invention 丨: 26) 1 1 »1 — 2 9 1 1 3 and 1 -4 is to be combined to separate from each other.-Foundation 2 9 to obtain a large photoelectric conversion device. 0 By forming a photoelectric conversion element and a thin film field effect transistor, a photoelectric conversion device can be obtained. 1 9 The photoelectric conversion element and the The thin film field-effect transistor is formed on a substrate having a large surface area using a photoelectric conversion semiconductor material a-S i. The photoelectric conversion device 1 serves as a so-called contact type sensor through a pair of optical systems. Read a source of information • On this substrate, most of the elements are two-dimensionally arranged at equal intervals ΓΠ, and a photoelectric conversion semiconductor layer and a TFT semiconductor layer are also formed in the same way. As shown in Figures 16 and 17 , Photoelectric conversion elements are formed on four substrates 9 and four Adhesion to the substrate binding agent 3 on the basis of the mutual phase separation 2. - phosphor layer 4 is formed after the surface of the substrate in this way * the photoelectric conversion, can obtain a large area photoelectric conversion device. — Anti-reflection (light absorbing layer) 5 is used to absorb light components and has a wavelength approximately equal to the wavelength of the light emitted from the phosphorescent layer 4 so that the reflected light is not separated, that is, light with a predetermined wavelength is absorbed for control The wavelength of the light to be reflected is formed on the front and end surfaces of the substrate, and in the space between the substrates bonded to the foundation. With this structure, the optical characteristics such as the resolution of the photoelectric conversion device can be improved. If the peak wavelength of the light emitted by the phosphorescent layer is 5 40 nm, the anti-reflection film is only used to absorb light having a wavelength of approximately 5 4 0 η m. Light component 9 so that it is not reflected. The formation of the anti-reflection film can improve the optical characteristics of the photoelectric conversion device, such as resolution. «This anti-reflection film can be converted by a conversion method or a printing method, or a paper can be ordered with a brush. China National Standards (CNS) A4 Specifications (210X297 mm)

-29-A7 B7 Printing by the Central Bureau of Standards, Ministry of Economic Affairs, Shellfish Consumer Cooperative, V. Description of the Invention (27) Formed by applying polymer materials such as epoxy or acrylic based materials. 9 As described above, according to this embodiment 9 in In a photoelectric conversion device having a large-area layer, the majority of the light-m conversion device substrates (the majority of the elements are arranged two-dimensionally at equal intervals) and-the photoelectric conversion semiconductor layer and-. TFT semiconductor layer are formed simultaneously »are combined to The basis to be separated from each other is used to absorb a wavelength approximately equal to the wavelength of the light emitted by the phosphorescent layer so that a reflection preventing film for absorbing the light component that does not reflect the component of the light is formed to avoid the exception of being used for the photoelectric conversion unit 9 The light from the white phosphorescent layer is reflected irregularly on the front and end portions of the photoelectric conversion substrate 9 to prevent irregular reflection and improve the photoelectric conversion device. Optical characteristics such as resolution, etc. Fourth Embodiment FIG. 18 is a schematic plan view of a preferred embodiment of the photoelectric conversion device of the present invention 9 FIG. 19 is a schematic cross-sectional view of the cross-sectional structure of rgt FIG. 18 Reference Figures 1 8 and 19, the device includes a photoelectric conversion unit 1 substrates of the photoelectric conversion unit 1 — 1 1 — 2 > 1 — 3 and 1 — 4 arranged in a matrix pattern on the substrate (not shown) > Basic 2 »— Adhesive 3 Used to bond the photoelectric conversion unit to the basic 2 Phosphorescent layer 4 1 and-Light absorbing layer 5 9 A photoelectric conversion element using a typical amorphous semiconductor material of amorphous silicon is used as the photoelectric conversion semiconductor layer. 1-1} formed on the substrate 1 of the photoelectric conversion unit 1} 1-2 > 1 -3 and 1-4 are used to output a read signal from the photoelectric conversion unit 1 to a thin film field effect transistor of an external unit The body is best formed on the base 1-1 »1-2 9 1-3 and 1-4 〇 The better is that the paper size of the paper applies the Chinese national standard (CNS > A4 format (210X297 mm)

-30-A7 B7 Printed by the Central Ministry of Economic Affairs, Zhuhai Mining Consumer Cooperative, V. Invention Description < 28) 9 Most of the photoelectric conversion elements are arranged at equal intervals and two-dimensionally to combine with thin film field effect transistors. The f shown in 8 is in the light-zero conversion device. 9 The four photoelectric conversion units 1 are arranged in a 2 X 2 matrix in the vertical and horizontal directions and fixed to the base 2 with an adhesive 3 〇 The photoelectric conversion unit 1 always needs an adhesive 3 It is fixed to Kisungni 2 〇 However, the use of the adhesive 3 makes the photoelectric conversion units 1 less susceptible to movement after they are fixed 9 It is best to use the adhesive 3 〇 It is worth noting that the adhesive 3 Inr. Tear rrh: Application To all positions between the base 2 and the photoelectric conversion unit 1 0 adhesive 3 can be used in any way rrte as long as the photoelectric conversion unit is permanently fixed to the base 2 0 phosphorescent layer 4 It is formed near the photoelectric conversion element on the photoelectric conversion unit. By forming this layer, it is close to or in contact with the photoelectric conversion element. As a source of information, it is used to emit the white phosphorescent layer of light to be received by the photoelectric conversion element. Light can be read with 1 X magnification. 0 A light absorbing layer 5 for absorbing light emitted by the phosphorescent layer 4 is formed on the end surface and / or front surface P of the substrate 1-1 to 1-4 on the substrate 1-1 to The formation of the light absorbing layer 5 on the end surface of 1-4 can prevent the light incident on the substrate or reflected by the ▲ 凌 ·· surface or the light directly incident on the end surface from being reflected by the end surface and incident on the photoelectric conversion element again. Or reduce the position of the incident light. That is, the light absorption layer can suppress the entrance of light outside the end faces of the substrate 1-1 to 1-4 near the photoelectric conversion unit on the photoelectric conversion element. In order to increase the S / N ratio, the shape of the light-absorbing layer 5 on the surface before the substrate 1-1 to 1-4 is revised. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 mm).

-31-A7 B7 _ * __ V. Description of the invention (29) ‘to prevent the light entering the substrate from being reflected by the front surface’ or reduce the amount of reflected light. The incidence of external light on the photoelectric conversion element can be suppressed by the above function, and therefore, an increase in S / N and an increase in substantial resolution can be achieved. The absorption wavelength characteristic of the light absorbing layer in the present invention is set in accordance with the oscillation wavelength of the phosphorescent layer 4. More specifically, the light absorption layer is set to absorb light distribution having the same wavelength as the main peak wavelength of the oscillation wavelength of the phosphorescent layer 4, or to absorb light distribution having a wavelength close to the desired peak oscillation wavelength. In general, the light absorbing layer is designed to have a color complementary to the color of the light emitted from the phosphorescent layer 4. In addition, the color of the light-absorbing light is preferably set as follows. First, the main peak wavelength of the oscillating wavelength of the scale layer 4 is located on the color crystal map. A straight line passes through the white point W on the crystal chart. The light absorbing member that transmits the light component of the complementary wavelength is preferably based on the oscillation wavelength of the phosphorescent layer 4 "

Du Yin 负 L, the Consumer Samples Cooperative Work of the Central Sample Rate Bureau of the Ministry of Economic Affairs, if the main peak wavelength of the oscillation wavelength of the light emitted by the phosphorescent osmium 4 is 5 4 Omm, it is best to use to absorb light with a wavelength equal to approximately 5 4 0 The component includes a light absorbing member having a light component having a wavelength equal to 540 mm. More particularly, it is preferable to use a light absorbing member for absorbing red, blue, and magenta. As a coloring material for coloring a light absorbing member, it is preferable to use a material that is not easily decomposed under X-ray irradiation and can exhibit long-term stability. It is best to use a spin coating method and a curtain coating calendar method. A screen printed paper is also applicable to China National Standards (CNS) A4 specifications (210X297 mm) A7 B7 V. Description of the invention () 30 (Please read the at method on the back, such as the conversion method of offset printing Or use a sprayer coating method to apply a light absorbing member to the end face or front surface of the substrate. Alternatively, a light absorbing member can be applied in the following way. As a light absorbing member — the resin is spin-coated , The screen coating method, the screen printing method, the conversion method, or the method using a sprayer are applied to the base plate. Then, the photoelectric conversion unit is arranged on the base plate. As a result, the light absorbing member is applied to the front surface or end of the substrate of the photoelectric conversion unit. In part, if the resin layer applied to the base plate has a sufficient thickness, when the photoelectric conversion unit is pressed against the base plate, the resin will flow between the substrates. Result The light absorbing member can be applied to the end portion of the substrate. When the photoelectric conversion unit is removed from the base plate, the light absorbing member can be applied to the front surface and the end surface of the substrate. In this example, if the base plate is used as a foundation, And when a mixture of an adhesive and the above-mentioned coloring material is used as a resin, the resin layer can be used together as a light absorbing layer and an adhesive. When the light absorbing member is applied only to the end surface of the substrate, the photoelectric conversion unit is fixed at After a foundation, a sprayer can be used to inject the resin used as the light absorbing member into the space between the substrates. Printed by Zhongji Department of the Central Bureau of the Zhuanzhou Bureau of Work and Consumer Cooperative [Fifth Embodiment] 圔 21 is in accordance with this A plan view of the entire structure of the photoelectric conversion device of the fifth embodiment of the invention. The photoelectric conversion device in FIG. 2 is characterized in that the photoelectric conversion devices 100, 200, 300, and 400 formed on four substrates are equivalent to one photoelectric conversion The components are spaced and spaced together to form — this paper size applies to China National Standard (CNS) A4 (210X297 mm) -33-A7 ____B7__ 5. Description of the invention (31) Large photoelectric conversion device. On the photoelectric conversion device 100, 1 0 0x1 000 photoelectric conversion elements are arranged and connected to the control lines g 1 to g 1 0 0 0 and the signal lines si gl to si glOOO. That is, all 2000 lines. Each 100 shift register SR1 is integrated into one chip. All 10 shift register chips SR1 — 1 to SR1 — 1 0 are arranged on a base 100 It is connected to the control lines g 1 to gl 1000. Each 100 detection circuit is also integrated into a chip. All 10 integrated circuit chips IC 1 to IC 100 are arranged on the substrate 100. And connected to the signal lines si gl to si 1 000, the photoelectric conversion devices 200, 300, and 400 have the same structure as the substrate 100. That is, a 100x100 photoelectric conversion element is arranged on each substrate and is connected to a 1000 control line and a 1000 signal line. In addition, 10 shift register chips and 10 detection integrated circuit chips are arranged on each substrate. The shift register chip and the detection integrated circuit chip on the base can be the same or different. Furthermore, four photoelectric conversion devices can be scanned simultaneously. In this example, the scan time can be shortened to about 1/4. As shown in Fig. 21, the photoelectric conversion element is formed on four substrates, and the four photoelectric conversion device substrates are combined to be slightly isolated from each other, thereby forming a large area of photoelectric conversion. Device. In this way, the yield of each substrate is increased, and at the same time, the monetary loss of each substrate due to defects can be reduced. More specifically, if the face of the photoelectric conversion element in the large-area photoelectric conversion device shown in FIG. 21 is equal to the photoelectric conversion element in the photoelectric conversion device formed on the large-area substrate, in circle 21, The relevant paper size of this paper applies Chinese National Standard (CNS) A4 (210X297 mm) -34-A7 B7

Printed by the Central Sample Rate Bureau of the Ministry of Economic Affairs, Consumer Cooperatives II. The total length of all control and signal lines in (32) is about the total length of all the control and signal lines in the photoelectric conversion device formed on a large area substrate. In this type of photoelectric conversion device, when the control and signal lines experience short circuits or open circuits, all output signals from the photoelectric conversion elements connected to these lines become incorrect. Therefore, photoelectric conversion cannot be used. Device. The above errors occur almost in proportion to the entire length of all control and signal lines, so the yield is reduced. In Fig. 21, the yield rate of the wiring error based on the base of each device is four times higher than the yield rate of the photoelectric conversion device formed on a large surface of many photovoltaic conversion elements. In addition, when a device cannot be used because of a defective substrate in 豳 2 1, the amount of money lost is almost proportional to the surface of the substrate. In the example of the device shown in FIG. 2, the amount of money lost About one-fourth of an example of a photoelectric conversion device in which all photoelectric conversion elements are formed on a large surface. If the space between the substrates is set to be equivalent to 1.5 pixels of the photoelectric conversion element shown in FIG. 2 1 When the value is smaller or smaller, the average value of the output signals from the neighboring photoelectric conversion elements can be used as the data from the part between the elements where the photoelectric conversion elements are not formed. Therefore, a simple data correction method can be used, and at this time, fairly correct data can be obtained. Figure 22 shows the magnification of the central part of Figure 21. Figure 22 shows the central part combined with the four bases. The following instructions can correctly correct the information from one of the components that must be presented in the central part and the method of using the obtained data. Please read the items on the back first. The paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm)- 35-A7 B7 V. Description of the invention (33) The data from the central component in Figure 2 2 cannot be interpolated by using the data from adjacent (right and left) components. Similarly, data from the upper and lower components cannot be used. In circle 22, the data at the position P X 4 and the data at the position P X 5 can be obtained by using the average value of the data from related neighboring components. The data at position P X 1 can be interpolated using the average of the data at positions P X 4 and P X 5. Similarly, the data at positions P X 2 and p X 3 can be interpolated by averaging the data from the relevant upper and lower components. -In general, in addition to the method of averaging the data from the left and right components or from the top and bottom components, the data can also be interpolated using various methods. For example, the following method is known: use from all eight Components, that is, a method of averaging the data of the top / bottom, left, right, top right, top left, bottom right, and bottom left components; a method of using some of the above eight data; and using the above data Method of geometric averaging. The Central Government of the Ministry of Economic Affairs of the Central Bureau of Work, Consumer Cooperatives, Printing Oxygen The following describes a sequence of such data interpolation with reference to the flowchart in Figure 23. This sequence of operations can be represented by the following flowchart: two-dimensional image input step S TP 1-memory storage step STP 2-image processing (interpolation) step STP3-memory storage step STP4-two-dimensional image output step STP5. The following describes the embodiment of this method in detail with reference to 圚 2 4 (which shows a flowchart for image processing (interpolation) and FIG. 25 (which outlines the arrangement of data displayed on the substrate of the photoelectric conversion device). Hypothesis 3 (vertical) X3 (horizontal) photoelectric conversion elements are formed on each of the substrates 110, 210, 310, and 410, and the relevant basic paper sizes are applicable to China's National Slope (CNS) A4 wash case (210X297 mm)-36 _ A7 B7 34 V. Description of the invention (The base is spaced from each other by a space equivalent to a photoelectric conversion element. In this example, the number of required data is (3 + 1 + 3) X (3 + 1 + 3) = 49. As shown in Figure 25, the relevant data are regarded as DAT (1, 1), DAT (2, 1), ... · DAT (DAT (7, 7)

7), D A T

In step STP 2 in the flow circle of Fig. 23, the data from the photoelectric conversion element is input into the memory. In this example, no data is generated on DAT (m, 4) and DAT (4, η). Therefore, the empty state (P) is set. The image processing (interpolation) in Fig. 24 will be described below. Order printing by the Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives First, decide whether to interpolate data between related substrates. If there is no need to interpolate this data, this data will remain empty (V). If interpolation is required, check if the existing data is the data to be interpolated. In this example, if m husband 4 or n husband 4, this data is not the data to be interpolated. In this example • Use the data obtained from the photoelectric conversion element and input to the memory, assuming this data is the data to be interpolated. In this example, if m == 4, then the average value of the data above and below the relevant data to be interpolated is input as the data to be interpolated to the memory. If n = 4, then input the average value of the data in the left and right positions related to the data to be interpolated, and use it as the data to be interpolated to the memory (step STP 4 of 323). In this example, if m = 4 and n = 4, that is, the existing data is DAT (4,4) in the center of the four bases, because there is no data in memory above, below, left, and right, in The average of the four data at the upper right, upper left, lower right, and lower left positions is rotated into memory. The paper wave scale uses the Chinese National Standard (CNS) A4 specification (210XW7 mm) -37-Central Bureau of Standards, Ministry of Economic Affairs Printed by Pui Gong Consumer Cooperative — A7 B7 5. Invention Description (35) In this way, interpolation can be easily performed by using the average of the data on the left, right, up, and down positions related to the required data. Fig. 26 is a sectional view taken along line 2 6-2 6 in Fig. 22. Referring to FIG. 26, four substrates are bonded to a large glass substrate 80 or a copper sheet 80. The space between the four substrates is filled with black resin 90 as a light absorbing member to prevent crosstalk caused by the scattering of light from the phosphorescent layer. As shown in FIGS. 9A and 9B, the photoelectric conversion devices of the first to fifth embodiments include: — a photoelectric conversion element, which is formed by laminating a first electrode layer 2, an insulating layer 7, and a photoelectric conversion semiconductor;靥 4, which is formed by a semiconductor layer 5, which prohibits the implantation of carriers of the first conductivity type, and a second electrode 靥; a photoelectric conversion mechanism, which is used to apply an electric field to the photoelectric conversion element in a direction, where The first conductive type carrier generated by the signal light and incident on the photoelectric conversion semiconductor layer can be held, and the second conductive type carrier different from the first conductive type can be guided toward the second electrode layer; An electric field is applied to the photoelectric conversion element, in a direction, in which the carriers of the first conductivity type are guided by the photoelectric conversion semiconductor layer toward the second electrode layer; and a signal detection unit is used for the photoelectric conversion mechanism. When a photoelectric conversion operation is performed, a carrier of the first conductivity type stored in the photoelectric conversion semiconductor layer or a carrier of the second conductivity type guided to the second layer is detected. [Sixth Embodiment] This paper size is not applicable China National Rate (CNS) A4 now (210X297 mm) (Please read the item on the back before ¥ this page)

--38-V. Description of the invention (36 A7 B7 Printed by the Central Ministry of Economic Affairs, Zhuhai Cooperative Consumers Cooperative) 2 7 is a plane of the entire structure of the photoelectric conversion device according to the sixth embodiment of the present invention. The photoelectric conversion device shown in 7 is characterized in that each of the four photoelectric conversion devices has the same structure as the photoelectric conversion device 100; each of the four photoelectric conversion devices rotates 90 ° on the same plane; and the four The device is combined with a space equivalent to one pixel of the photoelectric conversion element to form a large photoelectric conversion device. On the optical conversion device 100, 1000x1000 photoelectric conversion elements are arranged and connected to the control lines g 1 to g. 1 0 0 0 and signal lines S i gl to si glOOO, that is, all 2,000 lines. Every 100 shift registers SR 1 are integrated into one chip. All 10 shift register chips SR1 — 1 to SR1 — 10 are arranged on a substrate 100 and connected to the control lines g 1 to g 1 000. Every 100 detection carcass circuits are also integrated into a chip. All 10 integrated circuits The chips IC 1 to IC 1 0 0 are arranged on the substrate 1 0 0 And connected to the signal line si gl to si 1 000. The shift register chip and the detection circuit chip on the relevant substrate can be the same as each other. In addition, four photoelectric conversion devices can be scanned simultaneously. In this example, the scanning time can be shortened to about 1/4. As shown in Figure 27, the photoelectric conversion elements and lines with the same pattern are formed on four substrates, the same shift register and the same detection The integrated circuit is mounted on four substrates, each of which is rotated 90 °, and the substrates are slightly separated from each other to form a large-area photoelectric conversion device. With this structure, the number of parts can be significantly reduced. .Please read the back-

The paper size of the I ft book is applicable to the Chinese national standard (CNS > A4 size (210X297 mm) -39-A7 __ B7_. _ V. Description of the invention (37) In addition, the inspection can be performed by using a type of device As a result, the inspection step can be effectively performed, and thus an increase in throughput can be achieved. Although not shown, the other large-scale photoelectric conversion device can also be based on the same concept as the photoelectric conversion device shown in FIG. Two groups of photoelectric conversion elements and lines with the same pattern are formed on each of the four substrates. The two substrates are rotated by 180 ° and the substrates are separated from each other to form a large-area photoelectric conversion device. The structure can reduce the number of parts, and the inspection step can be performed by using two types of devices. This inspection step can be effectively performed, and therefore, an increase of 1: can be achieved. In addition, the large area can be reduced. The cost of the photoelectric conversion device. If the shift register and the detection integrated circuit mounted on the four substrates are designed to drive in two directions, all four photoelectric conversion devices It can be scanned in the same direction. As a result, it is used to process information read by all photoelectric conversion elements. Therefore, a large-area photoelectric conversion device can be manufactured at low cost. In the photoelectric conversion devices of the fifth and sixth embodiments, the light absorbing member is the most It can be applied to at least the front surface or the end surface of each substrate. In addition, as shown by circle 26, a phosphorescent layer can be formed on the photoelectric conversion element to form an X-ray image pickup device. As described above, according to the present invention, In manufacturing a large-area photoelectric conversion device, the yield of each substrate can be increased, and the amount of money lost per substrate due to defects can be reduced, thereby effectively reducing the cost of the large-area photoelectric conversion device. In addition, according to this embodiment , By setting the size of the empty paper between the base and the fast-moving Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the back · intentions first to install-π write this page), ίτ Printed by the Central Government of the Ministry of Economic Affairs of the Shellfish Consumer Cooperative Co., Ltd. It -40-A7 B7 V. Description of the invention (38) When the value of 1.5 pixels is equivalent to the photoelectric conversion element, the photoelectricity is not formed. The data on each part of the switching element is the smallest, which can facilitate the data interpolation on the part where the photoelectric conversion element is not formed, and obtain fairly accurate data. Furthermore, according to this embodiment, the large area is manufactured.稹 The photoelectric conversion device can effectively improve the inspection steps, and therefore, it can achieve an increase in production volume and a reduction in the number of left parts. As a result, the cost of a large-sized photoelectric conversion device can be further reduced. Furthermore, according to In this embodiment, all photoelectric conversion elements are scanned in the same direction in a large-faced photoelectric conversion device, so a simple device can be used to perform signal processing at high speed. As a result, the cost reduction and performance of the photoelectric conversion device can be achieved (Please read the back " note t item on this page first) -ϋ m. Item again ^: this-book printed by the Central Bureau of Standards of the Ministry of Economy CNS) A4 size (210X297 mm) -41-

Claims (1)

B8 C8 D8 b: j £ l supplemented Λ 谙 Committee 8¾¾. Indicate whether the original substance of the case will be changed in the future. The policy of the Central Government Bureau of the Ministry of Economy of the People's Republic of China, Shellfish Consumer Cooperative Co., Ltd. 6. The scope of patent application No. 851 1 1748 Chinese patent application Application for Patent Amendment Amendment June 1987 Amendment 1. A photoelectric conversion device comprising: (a) a majority of transparent substrates, each of which has a majority of photoelectric conversion elements on the front surface; (b) — a base member for Support the transparent substrate on the front surface: and (c) the light absorbing member is provided between the surface of the chopsticks of the transparent substrate and the front surface of the base member, and on the end surface of the transparent substrate. The device of item 1, wherein the light absorbing plum is made of an absorbable material that can reduce the photoelectric conversion member when incident. 3. The device of item 1 of the patent application, wherein the light absorbing member is Black material or material mainly complementary to the color of the light to be received by the photoelectric conversion element. 4. The decoration according to item 1 of the patent application, wherein the light absorbing member is resin · '»· 5 · If the device of the patent application park No. 1 is applied. · The light absorbing member is an inorganic material ·-6. If the device of the patent scope is applied, the light absorbing member is a gold oxide. 7. ^ Apparatus No. 1 of Patent Application 圔, where the light absorbing member is a resin colored with a dye or pigment · This paper size is applicable to China National Standard (CNS) A4 specification (2 丨 0X297 mm) (Please read the notes on the back before filling this page) ------ ^ ------------------ B8 C8 D8 b: j £ l Committee 8¾¾. Indicate whether the original substance of the case will be changed in the future. The policy of the Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives, India, Policy 6, Patent Application No. 851 1 1748, Chinese Patent Application, Patent Garden Amendment, June 87, Republic of China Amendment 1. A photoelectric conversion device comprising: (a) a plurality of transparent substrates, each transparent substrate having a plurality of photoelectric conversion elements on a front surface; (b)-a base member for supporting the transparent substrate on the front surface: and ( c) The light absorbing member is arranged on the surface of a chopstick with a transparent base and the foundation Between the front surface of the component and on the end surface of a transparent substrate. 2. The device according to item 1 of the patent application park, wherein the light absorbing plum is made of a light absorbing material that can reduce the photoelectric conversion component when incident. Composition 3. The device according to item 1 of the patent application, wherein the light absorbing member is a black material or a material mainly complementary to the color of the light to be received by the photoelectric conversion element. 4. If a patent is applied The decoration of the first item of the fan, where the light absorbing member is a resin · "» · 5 · Such as the device of the patent application of the first item of the fan garden · where the light absorbing member is an inorganic material ·-6. The device of item 1, wherein the light absorbing member is a gold oxide. 7. The device of item 1 of the patent application 1, wherein the light absorbing member is a resin colored with a dye or a pigment. China National Standard (CNS) A4 specification (2 丨 0X297 mm) (Please read the precautions on the back before filling this page) ------ ^ ------------- ----- Printed by the Shell Standard Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 6. Apply for patent Fangu 8 _ As in the patent application_ item 1, the light absorbing member is a resin selected from the group consisting of an epoxy resin, an acrylic resin, and a silicone resin. 9. The device according to item 1 of the patent application, wherein the light absorbing member has an adhesive function. 1 0. The device according to item 1 of the patent application, wherein the light absorbing member is disposed between the substrates. In the space · 1 1. The device according to item 1 of the patent application park, wherein the space between the substrates is smaller than the value of 1.5 maps related to the photoelectric conversion element · 1 2. The device further includes a photoelectric converter. The device according to item 12 of the patent application, wherein the optical converter is phosphorous. 1 4 · The device according to item 12 of the patent application, in which the optical converter is common to all of the substrates. 1 5 · The device in item 12 of the patent application, in which the optical converter is provided. On a substrate · 16. The device according to item 1 of the patent application park, where the substrate is a transparent substrate · 1 7. The device according to item 1 of the patent application, where the base is a transparent base · 1 8. The device according to item 1 of the patent application, wherein the base has a face larger than that of most substrates. 1 9. An X-ray image pickup device, including: This paper is in accordance with Chinese national standards (CNS) A4 specification (2 丨 〇 X 297 mm) II -t ---- Q! (Please read the note f on the back before filling out this page) Order- 卞: The Central Ministry of Economic Affairs Printed by the Industrial and Consumer Cooperatives A8 B8 C8 D8__ VI. Patent Application Fangu (a) Photoelectric conversion mechanism, including (i) most transparent substrates • Each transparent substrate has most photoelectric conversion elements on the front surface: (ii) a basic component To support a transparent substrate on the front surface; and (iii) light absorption The components are arranged between the rear surface of a transparent substrate and the front surface of a base member, and on the end surface of each transparent substrate. (B) The X-ray irradiation mechanism is used to irradiate X-rays: and ((c) for an optical converter In order to receive the rays and generate light with different wavelengths, such as the device of item 19 of the patent application, the light absorbing member is made of an absorbable material that can reduce the light m conversion member when light is incident. Composition · 2 1. The device according to item 19 of the patent application park, wherein the light absorbing member is a black material or a material mainly complementary to the color of the light to be received by the light-m conversion element. 2 2. The device of the patent application No. 19, wherein the light absorbing member is a resin · 2 3. The device of the patent application No. 19, where the light absorption member is an inorganic material · 2 4 · If the patent is applied for Fan Guo's device of item 19, in which the light absorption structure is a metal oxide. ^ 25. For the device of patent application Fan Yuan item 19, in which the light absorption member is a coloring device with a dye or pigment. Resin · 2 6. Such as patent application The device according to item 19, wherein the light absorbing member is selected from the group consisting of an epoxy resin, an acrylic resin, and a sandone tree. The paper size is applicable to China National Standards (CNS) 8 4 wash grid (2 丨 〇 X 297 mm) (Please read the note on the back of the page before filling in this page) (! · Ordered by the Central Government's Bureau of the Ministry of Economic Affairs and the Consumer Cooperatives of the Labor Union *. A8 B8 C8 D8 VI. Patent Application Group One of the resins. 27. The device according to item 19 of the patent application, wherein the light absorbing member has an adhesive function. 2 8. The device, item 19 of the patent application, wherein the light absorbing member is Set in the space between the substrates · 29. For the device of the patent application No. 19, wherein the space between the substrates is less than the value of 1.5 corresponding to the photoelectric conversion element. For example, the device of patent application No. 19, wherein the light converter is phosphorous · 3 1. For device of patent application No. 19, where the light converter is a common layer for all substrates · 3 2. The device according to item 19 of the patent application, wherein the optical converter provides For each substrate · 3 3. Such as the device of the patent application Fanyuan item 19 · Wherein the substrate is a transparent substrate · 3 4. If the application of the patent application No. 19 item S · where the base is A transparent foundation · 35. If the device of the patent application scope item 19 * Among them, the 具有 foundation has a larger surface than the majority of the base surface 稹 · 3 6 · If the device of the patent application category item 1, its · The light absorption film is a metal oxide formed by a culvert plating method. 3. The device of item 1 in the patent application park, wherein the light absorption film is one of a printing method and a coating method. Black resin · This paper uses China National Standard (CNS) A4 size (2 丨 0X297 mm) (please read the note on the back and write this page first) 0. Order SS _ _ 6. Apply for a patent Fan Gu 3 8 · If the device of the patent application Fan Yuan No. 1 further includes an interpolation eaves to use the output signals from the left and right photoelectric conversion files without forming a part of the space of the photoelectric conversion element Up-interpolation data · 3 9. If the device of the patent application for the first item, which has and All four substrates with the same structure are arranged in a 2x2 matrix in the vertical and horizontal directions in two dimensions and combined, and one substrate can be rotated 90 ·· 40. If the device of the patent application for the first item is used, its- There are four substrates, and the photoelectric conversion elements are installed two-dimensionally on each substrate, which are two-dimensionally combined into a 2 X 2 matrix in the vertical and horizontal directions, and the four combined substrates with the same structure and not adjacent to each other. The two substrates are rotated 180 ° on a plane in relation to each other, and the four substrates are scanned in the same direction. 4 1. The device according to item 1 of the patent application group, wherein the substrate includes:-a photoelectric conversion element, A first electrode 餍 an insulating layer, a photoelectric conversion semiconductor «layer * to prevent the implantation of a carrier of the first conductivity type, and a second" polar layer "are formed; Ministry of Economic Affairs Printed by the Central Standards Bureau Shellfish Consumer Cooperative (please read the note ^ • item on the back and then write 4) Photoelectric conversion mechanism for applying an electric field to the photoelectric conversion element in one direction, which is generated by signal light Incident photoelectric conversion The first conductive m-type carrier on the f conductor layer can be held, and the second conductive type carrier that is different from the first conductive weight is guided to the second electrode layer; _- · update mechanism for application An electric field to the 赅 photoelectric conversion element * in one direction, in which the carriers of the first conductivity type are guided by the light m conversion semiconductor layer toward the second electrode 靥: and the signal detection unit is used to identify the Implementation of the Chinese paper kneading rate (CNS > A4 size (210X297 mm) of the paper size standard) Printed by the Shell Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs *. _____ ^ _ VI. Measure the first conductive type carrier stored in the photoelectric transconductor semiconducting hip layer or the second conductive m-type carrier guided to the second transconductor. 4 2. Such as the device of the patent application No. 19, where The light absorbing layer is a metal vapor formed by a sputtering method. The device according to item 19 of the patent application, wherein the light absorbing layer is black using a printing method and a coating method. Resin · 4 4. Device such as patent application No. 19 • One step includes an interpolation mechanism for interpolating data on a part of the space that does not form a photoelectric conversion element using the output signals from the left and right photoelectric conversion elements. · 45 · Such as the device of the patent application park No. 19 * Among them, all four substrates having the same structure as the substrate are arranged in a 2 X 2 matrix in a vertical and horizontal direction in a two-dimensional manner, and are combined. • Each substrate can be rotated 9 Ο β · 4 6. Item of the device, in which all four substrates * two-dimensionally mounted photoelectric conversion elements on each substrate * are two-dimensionally combined into a 2 X 2 matrix in the vertical and horizontal directions, and the four have the same structure and are not adjacent to each other The two substrates combined with the substrate are rotated 180β on a plane in relation to each other. The four substrates are scanned in the same direction. 4 7 The device according to item 19 of the patent application park, wherein the substrate includes: a photoelectric conversion element, It is formed by stacking a first mold layer * ^ insulating layer, a photoelectric conversion semiconductor layer, a semiconductor layer for prohibiting the carrier of the first conductivity type, and a second m-pole layer. j light m Change mechanism • Used to apply an electric field to the photoelectric conversion element in one direction, in which the light generated by the signal light is incident on the photoelectric conversion semiconducting hip calendar. The paper dimensions are applicable to the Chinese National Standard (CNS) A4 Regulation "Grid (210X297) (%) {Please read Note f on the back of the page before filling in this page) α · Order A8 B8 C8 D8 ____ VI. The first conductivity type carrier in the scope of patent application can be maintained, which is different from the first conductivity type The carrier of the second conductivity type is guided toward the second electrode 餍: a renewing mechanism for applying an electric field to the optical m conversion element in one direction, wherein the carrier of the first conductivity type is guided toward the photoelectric conversion semiconductor layer toward Second electrode layer: and—a signal detection unit, configured to detect a carrier of the first conductivity type stored in the photoelectric conversion semiconductor layer or guide it to the second electrode when a photoelectric conversion operation is performed by the photoelectric conversion mechanism. The second conductive type carrier (Please read the note ^^ on the back before filling in this card) The paper size of the printed paper is applicable to the Chinese National Standard (CNS) A4 specification (2)丨 0X 297 mm)