經濟部中央標準局員工消費合作社印取 A7 _____ ___Μ 7 五、發明説明（） ~~ 本發明是有關於一種半導體晶圓的製造方法， 且特別疋有關於一種在晶圓表面形成字元以利後段製 程辨識的方法。 ,在半導體晶片的前段製程中，半導體材料的圓 柱形鑄塊必須事先形成。這種材料可以是矽或任何半 導體材料。然後，將鑄塊切割成晶圓，並在晶圓上表 面處理以得到晶片陣列。 這種镑塊切割而成的晶圓非常薄，且除晶圓邊 緣用做定位參考的基準符號外大致為圓形。舉例來 說，基準符號（fiducial mark)是經圓周上兩點切割晶 圓邊緣以得到、其留下一幾何上稱為弦的平直邊緣。 且，這個符號是在缚塊切割成晶圓前形成。 矽鑄塊（約圓柱狀）形成後，首先以邊緣研磨法 (Edge grinding)將矽鑄塊車床研磨至圓柱狀。待邊緣 研磨後，沿鑄塊表面（平行於鑄塊之軸）形成一符號。 是以，鑄塊切割成晶圓時，每片晶圓均具有相同的符 號（沿鑄塊表面形成）。 待鱗塊切割成晶圓後，在晶圓表面放置一字元 區塊以利於後段製程之辨識。字元區塊稱為晶圓辨識 (wafer I.D.) ’其中，每個字元是由彼此間隔的孔所組 成，而每個孔則是在晶圓表面照射雷射（燒）以得到。 這個步驟亦稱為雷射辨識步驟。而這些字 準符號的弦形成。 " 著基 在雷射辨識步驟中，孔的邊緣會殘留有矽沈積， 本紙張尺度適用中國國家標準（cnsThe Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs printed A7 _____ ___ Μ 7 V. Description of the Invention () ~~ The present invention relates to a method for manufacturing a semiconductor wafer, and particularly to a method of forming characters on the surface of a wafer to facilitate Method for identification of back-end process. In the front-end process of semiconductor wafers, cylindrical ingots of semiconductor materials must be formed in advance. This material can be silicon or any semiconductor material. The ingot is then cut into wafers and surface processed on the wafer to obtain a wafer array. Wafers cut from this pound block are very thin and roughly round except for the reference symbol on the edge of the wafer which is used as a positioning reference. For example, the fiducial mark is obtained by cutting the edge of the wafer at two points on the circumference, leaving a straight edge that is geometrically called a chord. And, this symbol is formed before the binding block is cut into a wafer. After the silicon ingot (about cylindrical shape) is formed, the silicon ingot lathe is first ground to a cylindrical shape by an edge grinding method. After the edges are ground, a symbol is formed along the surface of the ingot (parallel to the axis of the ingot). Therefore, when the ingot is cut into wafers, each wafer has the same symbol (formed along the surface of the ingot). After the scales are cut into wafers, a character block is placed on the surface of the wafer to facilitate identification of subsequent processes. The character block is called wafer identification (wafer I.D.), where each character is composed of holes spaced from each other, and each hole is obtained by irradiating a laser (burn) on the wafer surface. This step is also called the laser identification step. The strings of these standard symbols form. " 基基 During the laser identification step, silicon deposits will remain at the edges of the holes. The paper size applies to Chinese national standards (cns
五、發明説明（2) ' 並在後段製程中斷裂形成小微粒，在晶圓表面造成括 痕（微括痕）。 因此，本發明乃在形成晶圓辨識的過程中加入 兩去除梦微粒的步驟。首先，以磨石將沈積與晶圓表 面分開^後，再以液體清洗以去除已分開的石夕微粒。 、這兩個步驟只針對晶圓表面欲形成辨識字元的 區域進行。而後，正常的晶圓處理可以繼續進行。典 型的後段製程是化學機械研磨法，其無法將沈積自晶 圓表面移去，事實上，若沒有本發明之磨光及清洗步 驟，則這個步驟很可能會產生破裂及刮痕。 為讓本發明之上述和其他目的、特徵、和優點 能更明顯易懂，下文特舉一較佳實施例，並配合所附 圖式，作詳細說明如下： 圖式說明 第Ϊ圖係表示晶圓辨識的晶圓俯視圖； 第2圖係表示晶圓表面在形成晶圓辨識孔後所 殘留的半導體材料的半導體晶圓剖面圖；以及 經濟部中央櫟準局ΐ消費合作社印裂 第3圖係表示第2圖晶圓表面在去除殘留半導 體材料後的半導體晶圓剖面圖。 實施例 在第1圖中，晶圓12除前段製程中形成的弦13 外係圓形，如前文所述。字元區塊14形成於晶圓表 面16的區域15，且通常是沿著弦13。在第1圖_， 代表字元17是拉丁字母"a”，而區塊14則可為人類 本纸張以顧巾關 A7 S89952 五、發明説明（3 ) 所判讀。 區域15报小，其等級約略同於區塊14，而接下 來的步驟便限制於晶圓的這個區域。 這些字元是以雷射形成一系列彼此間隔的圓孔 以構成。孔的直徑及深度最好是90um及3um，此亦 為本實施例所採用。當然，本發明在此範圍内亦可適 用不同結構及大小的孔。而利用雷射形成孔的方法則 為此領域人士所習知。 同樣地，字元17亦可由溝槽組成，且機器可讀 碼可由一區塊溝槽組成。後文雖以”溝槽”及”圓孔，，辨 別孔19的形狀，但這種敘述亦可用於同等級尺寸的 各種形狀。溝槽的寬度及深度類似於圓孔的直徑及深 度’而第2圖中之圓孔及溝槽便具有相同尺寸。 第2圖係第1圖的俯視圖，用以表示組成字元I? 的孔19。以雷射形成孔的步驟包括：充分加熱石夕， 使其蒸發並擴散離開孔；然後，使矽蒸氣在孔邊緣附 近凝結形成沈積20。第1圖之線21係表示晶圓在沈 積形成區域的原始表面。 經濟部中央標隼局員工消費合作社印製 在第2圖中，沈積20的不規則形狀係簡化為長 方形側面。對圓孔而言，此形狀對應於孔19的周圍 材料。矽沈積的體積當然等於小於自孔移去的妙體 積。且，沈積形成有窄峰及不平側邊，如第2圖所示。 待晶圓辨識步驟後，對晶圓進行化學機械研磨 步驟。在這個步驟中，沈積可輕易地由晶圓分開。線 本紙張尺(CNS ) Λ4規格 (210X297^^·) A7 B7 經濟部中央標準局員工消費合作社印聚 389952 " - 五、發明説明（ 21(沈積接觸晶圓表面的區域）係弱點，且破裂常由此 點沿線21發生。破壞的矽片既硬且尖，同時會在晶 圓表面形成刮痕（微刮痕）。 刮痕可能會以各種方式破壞晶圓上的電路元 件。舉例來說，括痕可能切斷導體及其他元件的結構， 並干擾上方欲形成之元件層。 因此，在進行下一個步驟前必須先將沈積移除。 移除沈積的較佳實施例中’首先將沈積與晶圓 分開。這可利用人力以磨石完成。磨石並不適於半導 體製造，但卻相似於習知以磨石磨刀。 並且’磨光步驟最好以自動化機器完成。適當 的磨光機器在不同的製造領域中非常普遍且為該領域 人士所習知。 自晶圓表面去除沈積20的步驟會在晶圓丨2表 面留下矽片。為去除矽片，字元區域14的區域可以 適當液體清除，最好是解離水（dei〇nized water)e解 離水可用油漆刷以手完成，且通常用於半導體的清洗 中，此方法亦為習知。 接著’便可進行如化學機械研磨之後段製程， 如前文所述。 雖然本發明已以較佳實施例揭露如上，然其並 非用以限定本發明，任何熟習此項技藝者，在不脫離 本發明之精神和範圍内，當可作些許之更動與潤飾， 因此本發明之保護範圍當視後附之申請專利範圍所界 定者為準。V. Description of the invention (2) 'And break in the later process to form small particles, which cause bracket marks (micro bracket marks) on the wafer surface. Therefore, the present invention adds two steps to remove dream particles in the process of forming wafer identification. First, the sediment is separated from the wafer surface with a grindstone, and then washed with a liquid to remove the separated stone particles. These two steps are only performed on the area of the wafer surface where identification characters are to be formed. Then, normal wafer processing can continue. A typical back-end process is a chemical mechanical polishing method, which cannot remove the deposit from the wafer surface. In fact, without the polishing and cleaning steps of the present invention, this step is likely to produce cracks and scratches. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is exemplified below in conjunction with the accompanying drawings, which are described in detail as follows. Top view of a wafer with a circle identification; Figure 2 is a cross-sectional view of a semiconductor wafer showing the semiconductor material remaining on the wafer surface after the wafer identification hole is formed; FIG. 2 is a cross-sectional view of a semiconductor wafer after the remaining semiconductor material is removed from the wafer surface. Example In the first figure, the wafer 12 is circular except for the chords 13 formed in the previous process, as described above. The character block 14 is formed in an area 15 of the wafer surface 16 and is usually along the chord 13. In Figure 1_, the representative character 17 is the Latin letter "quota", and the block 14 can be read by humans using the paper Gu Guguan A7 S89952 V. Invention Description (3). The area 15 is small, Its grade is approximately the same as block 14, and the next steps are limited to this area of the wafer. These characters are formed by lasers forming a series of spaced circular holes. The diameter and depth of the holes are preferably 90um And 3um, this is also used in this embodiment. Of course, the present invention can also be applied to holes of different structures and sizes within this range. The method of forming holes by laser is known to those skilled in the art. Similarly, The character 17 can also be composed of grooves, and the machine-readable code can be composed of a block groove. Although the following uses "grooves" and "round holes" to identify the shape of the holes 19, this description can also be used for the same Various sizes of grade sizes. The width and depth of the grooves are similar to the diameter and depth of the circular holes', and the circular holes and grooves in the second figure have the same dimensions. Fig. 2 is a top view of Fig. 1 and is used to represent the holes 19 constituting the character I ?. The step of forming a hole with a laser includes: sufficiently heating the stone to allow it to evaporate and diffuse away from the hole; then, the silicon vapor is condensed near the edge of the hole to form a deposit 20. Line 21 in FIG. 1 shows the original surface of the wafer in the deposition-forming area. Printed by the Employees' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs In Figure 2, the irregular shape of the deposit 20 is simplified to a rectangular side. For a circular hole, this shape corresponds to the surrounding material of the hole 19. The volume of silicon deposition is of course smaller than the wonderful volume removed from the hole. In addition, narrow peaks and uneven sides are formed as shown in FIG. 2. After the wafer identification step, the wafer is subjected to a chemical mechanical polishing step. In this step, the deposition can be easily separated by the wafer. Line paper ruler (CNS) Λ4 specification (210X297 ^^ ·) A7 B7 Employees 'Cooperatives of the Central Bureau of Standards, Ministry of Economic Affairs, Consumers' Union, Printing 389952 " Cracking often occurs at this point along line 21. The damaged silicon wafer is hard and sharp, and at the same time, scratches (micro scratches) can be formed on the wafer surface. Scratches can damage circuit components on the wafer in various ways. For example In other words, the bracket marks may cut the structure of the conductor and other components, and interfere with the component layer to be formed above. Therefore, the deposition must be removed before proceeding to the next step. In the preferred embodiment of removing the deposition, 'the first The deposition is separated from the wafer. This can be done manually with a grindstone. The grindstone is not suitable for semiconductor manufacturing, but is similar to the conventional grindstone sharpening knife. And 'the polishing step is best done by an automated machine. Proper grinding Optical machines are very common in different manufacturing fields and are familiar to those in the field. The step of removing the deposit 20 from the wafer surface will leave a silicon wafer on the surface of the wafer 2. In order to remove the silicon wafer, the character area 14 The domain can be removed by appropriate liquid, preferably deionized water. The dissociated water can be completed by hand with a paintbrush, and is usually used in semiconductor cleaning. This method is also known. Then, 'such as chemical The subsequent process of mechanical grinding is as described above. Although the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the present invention. Any person skilled in the art will not depart from the spirit and scope of the present invention. As some changes and retouching can be made, the scope of protection of the present invention shall be determined by the scope of the attached patent application.
I紙張β適用中ίϋϋ ( CNS ) Λ4^^〇χ观GI Paper β Applicable Chinese (CNS) Λ4 ^^ 〇χ 观 G