2 922TWf. DOC/005 A7 B7__ 五、發明説明（丨） 本發明是有關於一種關鍵尺寸監測條圖案，且特別是 有關於一種使用兩種方向來進行關鍵尺寸監測條圖案。 微影（Photolithograph)爲整個半導體製程中，最舉足 輕重的步驟之一。以現今最常使用的金氧半導體（Metal Oxide Semiconductor; M0S)而言，凡是與元件結構相關 的，例如：各層薄膜的圖案及摻質（Dopants)分佈的區域， 都是由微影這個步驟來決定的。因此我們通常以一個製程 所需要經過微影次數，或是所需要光罩（Mask)數量，來表 示製程的複雜程度。 而微影製程中，最重要的部分乃在於曝光（Exposure) 過程中，如何將光罩之圖案完整轉移（Transfer)至晶片表 面之感光之光阻（Photoresist)層，使得光阻層之圖案與 光罩之圖案相同。若光罩圖案轉移到晶片上與實際位置誤 差過大，將會對後續製程產生極大影響。 經濟部中央標準局員工消費合作社印裝 1—，------if (請先閲讀背面之注意事項再填寫本頁) 線 一般對監測上述所產生誤差大小，係以關鍵尺寸偏差 當作監測的依據。所謂關鍵尺寸偏差就是以蝕刻後檢視 (After Etching Inspection)的關鍵尺寸減掉顯影後檢視 (After Develop Inspection)的關鍵尺寸値來表示。其中 上述値越接近零，表示偏差越小。但是由於在同一晶片上， 所製作圖案線寬不一，造成測量關鍵尺寸偏差之複雜性。 因此’往往選1擇在晶片之非主動區域（Nonactive Region) 製作相同線寬的關鍵尺寸監測條（Cr i t! cal Dimens ion Bar) °以測量關鍵尺寸監測條的關鍵尺寸偏差，來代表實 際圖案中的關鍵尺寸偏差。 3 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐> —~~ 2922TWf.DOC/005 A7 2922TWf.DOC/005 A7 經濟部中央標準局員工消費合作社印製 五、發明説明（> ) 接著，請參考第1圖，繪示習知之關鍵尺寸監測條監 測方式圖形。在圖中複數個關鍵尺寸監測條10 ’習慣上我 們會設計成五個相互平行且寬度相同之長條狀，但長度不 相同，包括有第一長條狀11、第二長條狀12、第三長條 狀13、第四長條狀14以及第五長條狀15，以便進行監測 關鍵尺寸。但是因爲只有一個方向，對於有垂直於圖中所 示方向的圖案，則無法得知是否有間題存在。 此外，對於光束投過光罩的圖案投影在晶片上，一方 面在光束會產生散射現象使得光束被擴大（Broaden)。另 一方面，光束會透過晶片表面光阻層，再由半導體基底反 射回來，產生干涉現象。因此會重覆曝光，改變實際的曝 光量。造成圖案轉移時，關鍵尺寸的偏差。例如線端短縮 (End of line pull back)，即在端點部分會因光程差不 同，產生較短且非線形圖形。 如第2圖所繪示線端短縮現象所造成圖形變化，其中 虛線部分20爲原先設計之圖案，而斜線部分21爲實際所 得之圖案。如上所述光程差不同使得在端點無法形成完整 的圖形，產生比原圖案較短的線形圖案以及垂直的轉角會 形成平滑的圓弧形（Rounded)轉角。對第1圖之關鍵尺寸 監測條’沒有其他圖案輔助，將無法監測線端短縮之情形。 因此，本發明的目的就是在提供一種關鍵尺寸監測條 圖案，設計另一組關鍵尺寸監測條在原先的關鍵尺寸監測 條附近’不但對另一個方向進行監測，也可以利用彼此的 組合去量測線端短縮之狀況。 4 本紙張 1纽用中關轉準 < ⑽丨A4規格（210X297^ ) 一 '----- (請先閲讀背面之注意事項再填寫本頁)2 922TWf. DOC / 005 A7 B7__ V. Description of the Invention (丨) The present invention relates to a key size monitoring bar pattern, and more particularly to a pattern using two directions for key size monitoring bar. Photolithograph is one of the most important steps in the entire semiconductor process. In terms of the most commonly used Metal Oxide Semiconductor (MOS) today, all elements related to the structure of the device, such as the pattern of each layer of thin film and the area of dopants distribution, are performed by the lithography step. decided. Therefore, we usually express the complexity of the process by the number of lithographic passes or the number of masks required for a process. In the lithography process, the most important part is how to completely transfer the pattern of the photomask to the photoresist layer on the wafer surface during the Exposure process, so that the pattern of the photoresist layer and the The pattern of the mask is the same. If the mask pattern transferred to the wafer is too different from the actual position, it will have a great impact on subsequent processes. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs of the People's Republic of China 1—, ------ if (Please read the precautions on the back before filling this page). Generally, the size of the error generated by the above monitoring is based on the critical size deviation. Basis for monitoring. The so-called critical dimension deviation is expressed by subtracting the critical dimension of After Development Inspection from the critical dimension of After Etching Inspection. The closer the above-mentioned 値 is to zero, the smaller the deviation. However, because the pattern widths of the patterns are different on the same wafer, the complexity of measuring critical dimension deviations is complicated. Therefore, '1 is often chosen to make a critical dimension monitoring bar (Cr it! Cal Dimens ion Bar) of the same line width in the non-active region of the wafer to measure the critical dimension deviation of the critical dimension monitoring bar to represent the actual pattern. Key dimension deviation in. 3 This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm > — ~~ 2922TWf.DOC / 005 A7 2922TWf.DOC / 005 A7 Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. ;) Next, please refer to Figure 1 for the conventional key size monitoring strip monitoring pattern. In the figure, a plurality of key size monitoring strips 10 'Conventionally we will design five strips parallel to each other and the same width , But the lengths are not the same, including the first strip 11, the second strip 12, the third strip 13, the fourth strip 14, and the fifth strip 15 for monitoring critical dimensions. But Because there is only one direction, if there is a pattern perpendicular to the direction shown in the figure, it is impossible to know whether there is a problem. In addition, the pattern of the light beam passing through the mask is projected on the wafer, on the one hand, the light beam will cause a scattering phenomenon. The light beam is enlarged (Broaden). On the other hand, the light beam will pass through the photoresist layer on the wafer surface, and then be reflected back by the semiconductor substrate, resulting in interference. Therefore, the exposure will be repeated and the actual exposure will be changed. When the pattern is transferred, the deviation of the key dimensions. For example, End of line pull back, that is, at the end portion, a short and non-linear figure will be generated due to the difference in optical path difference. As shown in Figure 2 The pattern change caused by the terminal shortening phenomenon, in which the dotted line portion 20 is the original design pattern, and the oblique line portion 21 is the actual obtained pattern. As mentioned above, the difference in optical path length makes it impossible to form a complete pattern at the endpoints, which results in a lower pattern Short linear patterns and vertical corners will form smooth rounded corners. The key size monitoring strip in Figure 1 will not be able to monitor the shortening of the line ends without the aid of other patterns. Therefore, the object of the present invention Is to provide a key size monitoring bar pattern, design another set of key size monitoring bars near the original key size monitoring bar 'not only to monitor the other direction, you can also use the combination of each other to measure the short-term condition of the line end. 4 This sheet of paper is used in the middle of the pass and the standard is <⑽ 丨 A4 size (210X297 ^) a '----- (Please read the precautions on the back before filling in this )
經濟部中央標準局員工消費合作社印製 2922TWf.D〇C/〇〇5 A7 B7 ___ 五、發明説明（今） 根據本發明的目的，提出一種關鍵尺寸監測條圖案’ 使用一光束照射，包括:複數個第一關鍵尺寸監測條，彼此 相互平行且寬度相同，以及複數個之第二關鍵尺寸監測 條，彼此相互平行且寬度相同，並與複數個第一關鍵尺寸 監測條之方向垂直，兩者最小距離設計爲一適當量測距 離。其中適當量測距離與所用光束波長相關，用以精準量 測出線端短縮，並加上複數個第二關鍵尺寸監測條，解決 另一個方向無法監測問題。 爲讓本發明之上述目的、特徵、和優點能更明顯易懂， 下文特舉一較佳實施例，並配合所附圖式，作詳細說明如 下： 圖式之簡單說明： .第1圖繪示繪示習知之關鍵尺寸監測條之監測方式圖 形； 第2圖繪示線端短縮現象所造成圖形變化；以及 第3圖依照本發明一較佳實施例的一種關鍵尺寸監測 條圖案。 標號之簡單說明： 10:複數個關鍵尺寸監測條 1U1:第一長條狀 12,32:第二長條狀 Π，33:第三長條狀 14,34:第四長條狀 15,35:第五長條狀 5 本紙張尺ϋ用Τ國國家標準（ CNS ) Α4規S· ( 210X29^5y 一 (請先閱讀背面之注意事項再填寫本頁) ---— ；-------------訂------線· 922TWf·DOC/〇〇5 A7 B7 經濟部中央標準局貝工消費合作社印裝 五、發明说明（t) 20:虛線部分 21:斜線部分 30:複數個第—關鍵尺寸監測條 36:第六長條狀 37:第七長條狀 — 38:第八長條狀 39:最短距離 40:複數個第二關鍵尺寸監測條 %μά. 請參照第3圖，其繪示依照本發明一較佳實施例的一 種關鍵尺寸監測條圖案。 本發明之關鍵尺寸監測條圖案圖案，係增加與原先圖 案(即30部分）垂直方向之一組關鍵尺寸監測條(即40部 分）。 所以’在關鍵尺寸監測條圖案中，包括有複數個第一 關鍵尺寸監測條30與複數個第二關鍵尺寸監測條40。其 中，複數個第一關鍵尺寸監測條30，習慣上例如由第一長 條狀31、第二長條狀32、第三長條狀33、第四長條狀34 和第五長條狀35所組成。且五個長條狀31,32,33,34,35寬 度相同並且相互平行，但彼此間相距與長度不一定相同。 其中，中間的第三長條狀33(即用以監測線端短縮現象）長 度最長，最接近複數個第二關鍵尺寸監測條40。 複數個第二關鍵尺寸監測條40,垂直於複數個第一關 鍵尺寸監測條30的方向，由第六長條狀36、第七長條狀 6 (請先閲讀背面之注意事項再填寫本頁) ΙΨ. 線 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） 2922TWf.DOC/005 A7 B7 ___ 五、發明説明（Γ ) 37和弟八長條狀38所組成，且三個長條狀36,37,38寬度 相同並相互平行，但三個長條狀36,37,38彼此間相距與長 度也不一定相同。其中，中間的第七長條狀37最長，但 最接近第一關鍵尺寸監測條30爲第六長條狀36。且設計 上，將最接近第二關鍵尺寸監測條40之第三長條狀33寬 度位於第六長條狀36長度範圍內。在增加複數個第二關 鍵尺寸監測條40下，對光罩廠製造時，檢測範圍不會只 有限於單一方向上，而解決習知圖案所不能檢測到另一個 方向問題。 一般對複數個第一關鍵尺寸藍測條30與複數個第二關 鍵尺寸監測條40之最短距離39，都會設計爲所使用光束 波長之1.5倍至3倍範圍內，如此在量測上較爲準確。對 所使用的光束，例如由波長爲3650A的i線或波長爲248 (A 之深紫外線。此最短距離39可輕易的檢查線端短縮現象， 避免因過度短縮，影響到電性問題。 因此’本發明的特徵在提供一關鍵尺寸監測條圖案， 使得原本只有單一方向的一組關鍵尺寸監測條，增加了一 組與原方向垂直.的關鍵尺寸監測條，如此不但可以檢測兩 個方向上的關鍵尺寸是否有問題，並且利用兩者組合去量 測出線端短縮的情況。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 7 本紙張尺度適用中關家標隼（CNS) A4規格（21()><297公楚> '' II——il»r— (請先閱讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 2922TWf.D0C / 〇〇5 A7 B7 ___ V. Description of the Invention (Today) In accordance with the purpose of the present invention, a key size monitoring strip pattern is proposed to use a beam of light, including: The plurality of first critical size monitoring strips are parallel to each other and have the same width, and the plurality of second critical size monitoring strips are parallel to each other and have the same width and are perpendicular to the direction of the plurality of first critical size monitoring strips. Both The minimum distance is designed as an appropriate measurement distance. The appropriate measurement distance is related to the wavelength of the beam used to accurately measure the shortening of the wire end, and a plurality of second key size monitoring strips are added to solve the problem that the other direction cannot be monitored. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description as follows: Brief description of the drawings: FIG. 2 shows a conventional monitoring pattern of a key size monitoring bar; FIG. 2 shows a graphic change caused by a shortening phenomenon of a line end; and FIG. 3 shows a key size monitoring bar pattern according to a preferred embodiment of the present invention. Brief description of the labels: 10: a plurality of key size monitoring bars 1U1: the first long bar 12,32: the second long bar Π, 33: the third long bar 14,34: the fourth long bar 15,35 : Fifth long strip 5 This paper uses the national standard (CNS) Α4 size S · (210X29 ^ 5y) (Please read the precautions on the back before filling this page) -----; ---- --------- Order ------ line · 922TWf · DOC / 〇〇5 A7 B7 Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (t) 20: dotted line 21 : Oblique line 30: plural first-key size monitoring bars 36: sixth long bar 37: seventh long bar-38: eighth long bar 39: shortest distance 40: plural second key-size bars μά. Please refer to FIG. 3, which shows a key size monitoring bar pattern according to a preferred embodiment of the present invention. The key size monitoring bar pattern pattern of the present invention is added in a direction perpendicular to the original pattern (ie, 30 portions). A set of key size monitoring bars (ie, part 40). So 'the key size monitoring bar pattern includes a plurality of first key size monitoring bars 30 and a plurality of second key sizes. Inch monitoring strip 40. Among them, a plurality of first key size monitoring strips 30 are conventionally composed of, for example, a first strip 31, a second strip 32, a third strip 33, a fourth strip 34, and a first strip. Five long strips 35. And the five long strips 31, 32, 33, 34, 35 are the same width and parallel to each other, but they are not necessarily the same distance and length from each other. Among them, the third long strip 33 ( That is, it is used to monitor the shortening phenomenon at the end of the line) The longest length is closest to the plurality of second key size monitoring bars 40. The plurality of second key size monitoring bars 40 are perpendicular to the direction of the plurality of first key size monitoring bars 30. Six long strips 36, seventh long strips 6 (Please read the notes on the back before filling in this page) ΙΨ. The size of the paper is applicable to the Chinese National Standard (CNS) Α4 specification (210 × 297 mm) 2922TWf.DOC / 005 A7 B7 ___ V. Description of the invention (Γ) 37 and Di Ba long strip 38, and the three long strips 36, 37, 38 are the same width and parallel to each other, but the three long strips 36, 37, 38 are each other The distance and length are not necessarily the same. Among them, the seventh long strip 37 in the middle is the longest, but the closest A key size monitoring strip 30 is a sixth strip 36. In design, the width of the third strip 33 closest to the second key size monitoring strip 40 is within the length of the sixth strip 36. In the increase of a plurality When the number of second key size monitoring strips is 40, the detection range will not be limited to a single direction when it is manufactured by a photomask factory, and it will solve the problem that the conventional pattern cannot detect the other direction. Generally, a plurality of first key size blue The shortest distance 39 between the measurement strip 30 and the plurality of second key size monitoring strips 40 is designed to be within 1.5 to 3 times the wavelength of the used beam, which is more accurate in measurement. For the used beam, for example, the i-line with a wavelength of 3650A or the deep ultraviolet with a wavelength of 248 (A. This shortest distance 39 can easily check the shortening of the line end to avoid affecting the electrical problems due to excessive shortening. Therefore ' A feature of the present invention is to provide a key size monitoring bar pattern, so that a set of key size monitoring bars that originally had only a single direction is added to a set of key size monitoring bars that are perpendicular to the original direction. This not only can detect the two directions Is there a problem with the key dimensions, and use the combination of the two to measure the shortening of the wire end. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Anyone skilled in this art, in Various changes and modifications can be made without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope of the appended patent application. 7 This paper applies the Zhongguanjia standard (CNS) A4 Specification (21 () > < 297 Gongchu > '' II——il »r— (Please read the precautions on the back before filling this page)
,1T -線 經濟部中央標準扃員工消費合作社印裝, 1T -line Central standard of the Ministry of Economy