TW386248B - Multi-beam array electron optics - Google Patents

Abstract

A multi-beam array optics system useful as a pattern generator for electron beam lithography includes a source of electrons having an array of individual field emission elements each of which can generate an individual electron beam; a beam assemblage optics being set as assemblage for receiving the individual electron beams to accelerate and control the individual electron beams; and a target location being set on a place to that the beam assemblage optics directs the assemblage of the individual electron beams.

Description

Ｍ B7 V. Description of the invention (1) The present invention relates to a multi-beam array charging particle optics (lens) and related systems, and in particular to a pattern generator using a multi-beam array. It is well known in the field of electron beam pattern generation that the production of a pattern generation system can be increased. The main application of these pattern generation systems is to use photolithography to make photomasks used in semiconductor manufacturing processes and to write patterns directly on wafers to form semiconductor elements. Therefore, it is necessary to individually scan an electron beam or ion beam pattern onto a substrate, that is, a photomask or a wafer, which is a relatively slow process. Some people have tried to improve this output, for example, in the described electron beam pattern generator, from the factory 0.] ^ 11〇61〇 £ 8 and others in Microcircuit Engineering 83 3, 1 9 8 3 on page 99 and thereafter "A Concept for a 10 GHz Pixel Rate (Multiple) EB. Earn Machine) +" An array of 3 2 X 3 2 focused electron beams (U matrixof 32 * 32 focused electron'beamlets) that can be individually and individually blinked is used to print bags for the consumer cooperative of employees of the Central Bureau of Standards of the Ministry of Economic Affairs. bea ml ets) can be individually focused by the so-called fly eye prism, which is a composite of a few small lenses, and any small lens is related to a light beam. The lack of this method is that at least any one of the individual beams is susceptible to 2 paper standards applicable to Chinese National Standards (CNS) A4 specifications (210X297 mm) A7 B7 V. Description of the invention (2) Because it occurs in the electron beam column Pollution in The effects of various asymmetries, such as those caused by small dust particles falling into the mirror of the beam column. This pollution has different effects on different beams, causing the beams to be affected relative to each other. Substituting each other reduces the accuracy of the pattern being written. In addition, there is also a microbeam column method, in which individual microbeam columns each have a diameter of, for example, one arranged in a rectangular array. In order to provide multiple electron beams, each one has its own deflector, accelerator, and focusing electron beam lens. Therefore, it is necessary to separately make these microbeam columns, which is also complicated and expensive. Then there is the array cathode method, which can obtain a high-density integration of one or two-dimensional electron beam sources. Due to the collapse of dielectric properties, such elements are the energy source for electrons that can be input to these existing traces. The limitation also limits the usability of the electron beam pattern generator. In addition, it is also known in the art to use a laser beam as a source of multiple electrons. Group light negative electron (negative

I electron affinity). This electron beam system, Schneider et al., J. Vac. Sci. T e c h n ο 1. B 1 4 (6), 3782-3766, Nov / Dec 1996. Negative electron family materials, such as GaAs compounds, are well-known (very sensitive to pollutants, which will reduce or eliminate the emission of electrons. In the generally visible empty environment of an electron beam pattern generator, you can therefore The limited life of this multi-beam cathode is expected. 3 This paper size is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling out this page Bureau Consumers' Cooperative Printing Stand A7-___ B7 V. Description of Invention (3)-Known work in this field has not solved the problems that occur when increasing the output of the charged particle beam system when it is commercially feasible The main obstacle to such commercialization directly written on semiconductor wafers is the low yield of traditional charged particle beams on the one hand, and an extremely limited beam energy of these parallel array beam sources on the other hand, which is about Hundreds of volts. (See, for example, iyiac_Doiiald. Et al. Proceedings SPIE 2522 (1995) 220-229.) This limited beam energy forces the emitter to the eye. The optical path length of the object must be very short (about 1mm) so that there is no improper twist of the internal beam (inter-beamlet). In addition, due to the low energy, these particles cannot penetrate the traditional object of the target Thick photoresist material (4 0 0 A). It also makes this photoresist unable to be exposed. In addition, the marking for alignment is also under this photoresist, so it is not seen by this light beam. Electron beam lithography has been limited to the production of photomasks. Even for the production of photomasks, it is also hoped that it can use traditional energy beams to increase production, especially as integrated circuits become more complex and demand becomes more complex. According to the present invention, a pattern generator and a method for generating a pattern using a source of charged particles, the source is an array of elements from other sources, specifically Is formed on a single substrate, and any source element in this source emits an otherwise charged particle beam. These charged particle beams then pass through (Light) beam assemblage optics, and this (light) beam assemblage combination lens is connected to the 4 paper sizes applicable to the Chinese National Standard (CNS) A4 specification (21〇 乂 297 feet) ~~~- ----- B7 V. Description of the invention (4) The individual charged particle beam is received and controlled as if it were a single beam. That is, in this beam-gathering combination lens "There is no individual deflector or accelerator for any beam." In other words, these individually charged particle beams are treated as a single overall beam 'and are therefore accelerated and guided to a target, For example, a semiconductor wafer fixed on a suitable support or a substrate under a mask material (retic 1 e) is like a conventional charged particle beam lithography. Generally speaking, this beam-focusing combination lens includes at least one deflector, which is essentially used to deflect the entire focused beam uniformly, a focusing element (focuse 1 ement) is a traditional "prism", and-an accelerator The device accelerates the entire collected beam as a single beam, that is, it does not accelerate individual beams independently but accelerates all beams uniformly. In addition, the pattern generator can operate in a vector scan or raster scan mode. Any individual element in this source can be individually addressed by light or darkness. In some embodiments, these individual light or dark source elements are replaced by the light or dark of a whole group of elements (e.g., a rectangular sub-array of source elements). These light or dark are generally completed by a source to an individual source potential of any source element, or by an individual extraction potential provided to any source element. The (light) beam (eam) is here regarded as an identifiable ― 5 paper sizes are applicable to the Chinese National Standard (CNS) A4 specifications (210X297 mm) A7 B7 V. Description of the invention (5) Beam charged particles . According to general usage, this disclosure uses the term 'bundle', which has nothing to do with whether the beam is dark (closed) or (open). In this way, a static beam axis is defined, and this beam axis is It is a central path followed by the particles in this beam. The beam (Weamlet) is here particularly regarded as another (light) beam of the aggregated combined beam in a multi-beam system. Multiple beams (m u 11 i-be e a m) are considered here. Multiple charged particle beams in a single group beam. (The use of "multibeam" here does not mean that it is to be considered here as a multi-beam electron beam system known in the art. In this system, each of the individual electron beam systems is in its own individual. Light. Beam column and each one has its own optical layout.). The term "array" is used here (but not limited to this), such as an array of columns and rows, regardless of what shape it is intended to be, that is, set in one or two dimensions, square, rectangular , Round, or linear. Other array geometries may be appropriate. This array does not need to be placed on a plane, but can be some other regular table. ≫ Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). For example, a spherical or cylindrical surface. This array of individual particle source elements is provided with a selector for extracting particles from the source elements, thereby starting the formation of the diversity of individual electron beams. The action of this selection can be treated as a single selector with this array source as a separate selector array, or as a collective aggregation for all particle sources. A structure was integrated. The array of this source element _ is provided with dark (blank; 6 paper sizes are applicable to China National Standard (CNS) A4 specifications (210X297 mm) Λ7 _____._ B7 V. Description of the invention (6) blanking) and bright (non- 'Blank (unblanking) (closed or on) structure' One of the specific embodiments has no operation on any other source element on any source element. In addition, this independence is not an individual source element in some specific embodiments. For example, it can be described by a rectangular array. It can be used to turn on or off the entire selected column or row of the source element without referring to other columns or rows, or to close the small rectangle of the source element. Area. The empty white can be provided by the independent control of the potential (voltage) of the individual source elements, or through the individual selection potential where the individual selector is provided, or a combination of these. . Economy. Printed by Qiu Central Standard Bureau employee consumer cooperative

(Please read the back two. Please note the is before filling in *? J line on this page, in another specific embodiment 'this source array includes not only an independent dark (blanking) structure but also independent edges A mirror (one of any source element) is used to focus the particle beam. (稜鏡 and (lens) optics or (lensic) optics are here agreed not to be lenses or light used as light Reflective 稜鏡 is used as an electromagnetic or electrostatic structure for focusing the charged particle beam.) These 稜鏡 are made by additional steps in the production of this source structure. These 稜鏡 are used in In the application of specific particle beam systems. For example, this source lens is matched with this light beam lens for effective beam transmission. In a specific embodiment, an independent deflector is provided to an independent beam. Again, these and so on An independent deflector is produced by additional steps in the production process of this source structure and is integrated in this structure .. A selected light-song deflector; when activated, causes the relevant source 7 Paper ruler Degree applies to the Chinese National Standard (〇1 \ $) of the six 4 specifications (210 father 297 public 漦). Λ7 B7 V. Description of the invention -Generally, the direction of the axis of the particle beam system is changed to a slightly different direction. The deflection is only a few degrees of the entire beam axis, but it will be compared in other specific embodiments. 1 The particles emitted by this source array within the scope of the invention are expected to be electrons or ions. In a specific embodiment using electrons as charged particles, the source of the particles is called A cathode or cathode array is used to emphasize the multiplicity of these independent cathodes. This source array is generally made into an integrated structure. There are many writings about this integrated cathode array, and in these techniques also There are several well-known appropriate radiation technologies and structures, including field emission, negative electron affinity, and thermionic cathodes arranged in an array of emitters. The process for making sub-micron electron emitter arrays was issued on April 6, 1993 to MacDonald et al., U.S. Pat. No. 5, 199, 197 (US Pat. No. 5, 199, 197) And as described in US Pat. No. 5, 1 2 6, 287 (US Pat. No. 5, 1 2 6, 287) issued to Jones on June 30, 1992, and these two Cases are incorporated herein as a reference for the present invention. US Patent No. 5, 3 63, 021 issued to MacDonald on September 8, 1984 (US Pat. No. 5, 363, 021) The advantages of the integrated two-dimensional array radiation structure described in the above are also incorporated into this case as a reference. For example, a U.S. patent issued to Jones and others on February 20, 1990

I 4 Page 1 Alignment This paper size applies to Chinese National Standard (CNS) Λ4 specification (210X2W public narrative) Λ7 Five 'invention description (8) Consumption cooperation between employees of the Central Standards Bureau of the Ministry of Economic Affairs Du printed profit number 4,902,8 The procedure described in 98 (US Pat. No. 4, 902, 898) for making ion emitter arrays has also been incorporated as a reference in this case. Therefore, according to the present invention, a multi-beam optical system includes a multi-beam generator for generating a focused combination of electron beams, and a (light) beam-focusing electron optics (lens) for dualizing it as a single and integral beam Accelerate and guide the beam to focus and combine on a target, such as a semiconductor wafer or a reticle substrate '. The multi-beam generator includes a radiation array (an array of field emitter cathodes) and a radiation control array to control the amount of this radiation current, both of which are formed on a single (eg, silicon) substrate . In a specific embodiment, the control array is an integrated selector / blanker electrode array following the field emitter (that is, radiated along the space in this space). A sequence of light beams). In a specific embodiment, the multi-beam generator includes an electrostatic deflector array, and the individual beams are deflected by an appropriate number, and in some embodiments, a following edge The mirror array is also integrally formed on this same substrate. The focusing (lens) optics of this (light) beam will consider the necessity of transmitting a relatively high level of all beam currents in a short complete beam path length, thereby accelerating this beam macro combination to a desired Energy of the last beam. This final beam energy was then selected to reduce the internal interaction of the internal beam, thereby allowing the radiation array and the paper size to apply the Chinese National Standard (CNS) Λ4 specification (210X297 mm). Please fill in the back Ί % Order line Λ7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (9) The extension of the space between the targets. By increasing the length, it is possible to use traditional electron optics (lenses) for focusing and deflection. This beam energy is also selected so that it can penetrate the traditional thickness of the photoresist material to expose the photoresist and develop the backscattered signal, which is used to determine the position of the alignment mark that may be located under the photoresist. . Also considered in the structure of the beam-gathering combination lens element is that the multi-beam source (cathode array · array) is dense in its cross section as opposed to the traditional qugsi-point source 1 In terms of size, and other characteristics of this beam-gathering combination, such as this fluctuating beam current on the target. A reliable electron lens projection system such as a transversal dense source used in the present invention has appeared in electron beam projection lithography, see M. B. Her it age 'in J _ V ac · S c i T e chn ο 1 ·, 1 2 6 (Nov / Dec 1 9 7 5) pp. 1135-1140 and B. Lischke et al. 'In Op tik 5 4 (1 9 7 9) (4) pp. 3 2 5-3 4 1 Published documents, these two documents are also cited as reference documents for this case. In addition, in the conventional art, according to the present invention, there are other design of the 稜鏡 and deflection lens are suitable to make k's, in addition to moving objective lens (Moving Objective Lens) as in J. Vac. Sci. T e chn ο 1. 15 (3) (M ay / J une 1 9 7 8) 8 4 9-5 2; Variable Axis Lens, as in J. Vac. Sci. Techno 1. 19 (4) (Nov./Dec. 1981). 105 8-6 3; Variab.le Axis Immersion Lens, as in Microcircuit 10 paper Dimensions are applicable to Chinese National Standards (CNS) Λ4 specifications (210X 297g t) (Read the back and read the precautions before filling this page) # 1

、 1T line_ Λ7 B7 V. Description of the invention (10)

Engineering 83 (1 9 8 3) 106-16, J. Vac. Sci. T e chn ο 1. B 6 (6) (Nov./Dec. 1988) 1995-8; J. Vac. Sci. T ech η ο 1. B 8 8 (6) (Nov./Dec. 1 9 9 0); 1 ό 8 2-5 etc. The above and other objects, features, and advantages of the present invention will be more apparent through the following detailed description of the present invention and the combination of related drawings. The first diagram is a diagram of a multi-beam optical (lens) system according to the present invention; the second diagram is a cross-sectional view of a portion of a multi-beam field radiation source according to the present invention; _. _ _ Third diagram A shows a finger-shaped cathode and the third figure B shows a strip cathode; these are taken as the source in the second figure; and the fourth figure A is a (Light) beam focusing combination optics (lens) diagram; and _ The fourth figure B series beam focusing combination optics (lens) a more detailed detail • ·. Schematic. This multi-beam pattern generator includes an array of sources which are a source of charged particles. An integrated extractor / blank er electrode control array after these charged particle sources (" after " means a sequence of charged particle beams or Is the axis of the downstream 11), a specific embodiment with an electronic deflector is provided to provide an individual 11 that traverses this beam path. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297mm t ) (Read the notes on the back before filling in page P

, TT line Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs ΑΊ, ^, __— B7 V. Description of the invention (11) ~~ — A deflected beam ′ is followed by a specific embodiment with an array of arrays behind. This source array structure is further integrated with electrical connections to provide appropriate control electronics. These electrical connections provide control signals and control the acceleration voltage, or these electrical connections can also be integrated with this radiator array itself From-on. This chirped array is only required for some specific embodiments, for example, if the radiation pattern from this source element is not compatible with its downstream beam-gathering combination optics (lens) in space or speed. This source array without this deflector array can be used as an II-point matrix " pattern generator, as a lithography application, as shown in U.S. Patent No. 4,153,843, which is the reference material for this invention (Us Patent 4 153, 8 4 3). Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economics. Therefore, the multi-beam generator in a specific embodiment includes a source with a micro-blanker and a micro deflector. -deflector) array of electron field emitters (or a Schottky-assisted cathode emitter array), and a conventionally designed electron optics to form an array The image is on a target substrate. The use of a field emitter as a cathode element basically allows a cathode image (without other elements). Conventional multi-beam optical lenses require optical elements downstream of this cathode, but this can result in undesired beam drift and other effects. The multi-beam generator only forms and processes this individual (light) beam at the (light) beam source, so it is built. '12 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) Λ7 B7 V. SUMMARY OF THE INVENTION (12) The composition minimizes (light) beam drift and other effects. Therefore, the downstream beam-concentrating combination lenses act as if they are singular, that is, they are treated as a whole beam to affect these beams, so there is no source of any deviation effect in this multi-beam source itself. on. The first picture is a diagram of a multi-beam pattern generator system 1 contained in a conventional hollow box (not shown.) And also includes a multi-beam electron source 2 (hereafter referred to as the multi-beam (Beam source) It produces a gathering combination of electron (light) beams, and a beam gathering combination optics (lens) 4 to guide the gathering combination of this (light) beam 6 to a target, which is a work (work piece) or a wafer fixed on a traditional movable χ_γ flat table (precision sports table) 5. A conventional backscattered electron detector 7 is provided to detect the electrons scattered by the target 3. Only a small part of the detailed cross section of the multi-beam source 2 is as described in the second figure, and includes a microcathode configured, for example, in a rectangular array (in the case of a planar beam diagram). The electron field emission array 202 and the cathode array 203 are drawn. The two microcathode arrays 202 and the lead-out cathode arrays 203 are formed on a sand substrate (or other suitable material) 203. The cathode 202 is brought to a reference voltage Vr by an applied voltage. The extraction cathode 203 is brought to a positive extraction potential VE with respect to this reference voltage VR by a second applied voltage. Lead out any one of the cathodes 203. A hole is defined by a channel of the electrons emitted by the cathode 201. In a specific embodiment, the multi-beam source 2 includes an anode array 204, and this anode 13 paper size is applicable to the Chinese National Standard (CNS) Λ4 specification (210X 297 mm) (Please read the precautions on the back first Fill this page again

Line 1T Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs Λ7

Printed by the Employees' Cooperative of the Central Standards Bureau of the Ministry of Economics. Description of the invention (13) The polar array is an accelerator and is brought to a positive potential VA which leads to the voltage V E and defines a hole for the channel of these electron beams. In a specific embodiment, the deflector array includes a ._X-deflector array. 2 0 5 and a y-deflector array 2 0 6 with integrated control electronics 2 3 0 and From this anode array '.' .... 2 0 4 and integrated with respect to the propagation direction of this individual radiation beam and are positioned _ downstream (that is, 0.1 to 10 / zm). According to the design factors of the system, these individual beams are deflected by an appropriate proportion to make them cross the beam path. The lead-out electrode 2 0 3, the anode 2 0 4 and the X, y deflector electrode 2 05, 2 0 6 are formed on the substrate 2 1 by a conventional 1C manufacturing technology to form a continuous insulating and conductive layer. As shown in the second picture. These insulating layers 207, 208, 209 are, for example, silicon dioxide or other dielectric materials known in 1C manufacturing techniques. These conductive layers 2 0 3, 2 0 4, 2 0 5 and 2 0 6 are traditionally deposited and shaped aluminum or alloys thereof, and other conductive materials such as polycrystalline silicon, titanium-palladium-gold (Ti-Pd -Au), titanium-platinum-gold ', (Ti-Pt-Au) and titanium-tungsten (Ti-W) can be used. Since appropriate sources are well known in the art, the structure and production of this source are not described in more detail here. See, for example, US Patent No. 5,0 7 0, 2 8 2 (Epstein et a 1. US Patent No. 5,070, 282) by Epstein et al., And Newman et al. Published in J. Vac. Sci. Technology, 131 (4) Oct.-Dec. 1983, pp. 993 of 14 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 g) (谙 Please read the precautions on the back before filling this page) § 丨 line; I. Λ7 ___ Β7 V. Description of the invention (14) " Dot Matrix _Ele.ctro.ii beam Lithography ". &Quot; etc., and MacDonald et al. SRC Workshop; Dallas, Texas, 1991, p. 241 " Addressable Array Cathodes for Projection ........... .. ···

Electron Beam L i t h o g r a p li y · ’) " etc. are all incorporated here as' relevant references to illustrate the structure of this source and the details of its production. The structure shown in the second figure is to provide radiation stability of the output current and the amount of current variation between various radiators. There is also a need to extend the life cycle of this emitter to prevent it from being burned. Therefore, it is within the scope of the present invention to provide a redundant radiator. In a specific embodiment, the radiators are combined in a group manner. Each group includes at least one redundant radiator element, and any actual beam is emitted by all the radiation in the group. The radiation emitted by the device is combined. Therefore, if one radiator is burned and a level of output I · is maintained, a redundant radiator can be used instead. Because any individual electron source (radiator or cathode element) is individually controlled by blank non-blank and deflection, and any one defines a different beam and can then be used to create a delicate texture pattern. Therefore, in a specific embodiment, for example, by pulse tuning. (Pu 1 sem 〇d 111 ati 0 n) 'The current level of the individual defeater is controlled to provide a gray scale ( The intensity can be changed. 15 This paper size is applicable to the Chinese National Standard (CNS) Λ4 specification (210X 297g t) (please read the precautions for δ before reading the δ. Please complete the page, the? Τ line, and the central standard of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Bureau of the People's Republic of China Printed by the Consumer Standards of the Central Standards Bureau of the Ministry of Economic Affairs Λ7 B7 V. Description of the invention (15) Yes. Since this individual radiator can be controlled, the pattern generator according to the present invention allows very high-speed output A high-speed parallel structure imaged by a pattern. The microcathode 202 is 'for example, a terminal cathode or a strip-shaped cathode, and so on. It is a conventional technique', as shown in Figure 3 and Figure 3, respectively. B is exemplified. There are other types of cathodes, for example, the shape of the reading can also be used. This strip-shaped cathode is in Spa 11 as. And MacDonald in IEDM. Technical Digest, 1991 This article is also listed as a reference for The third figure A depicts a finger-shaped cathode, and a tungsten titanate (TiW) lead-out cathode 303 surrounds a silicon cathode finger end 301. The second figure B describes a strip-shaped cathode., A sand base 3 10 defines a lower silicon ribbon 3 1 2 and is surrounded by a parallel tungsten titanate cathode 3 2 4. Finger-shaped cathodes are described in this art as microcathodes. The most common type, band-shaped and ring-shaped wedges have a larger radiation area and generate a larger full current than the finger-shaped ones. The microcathode 2 0 2 uses a well-known lateral high temperature thermal oxidation process and Molding. The microcathode formed in this way is inherently uniform in height, shape and radius of curvature, and the lead-out cathode system is self-aligned. It has very sharp finger tips and very small finger tips to the lead-out electrode The distance of the cathode, when producing a very large and stable average current density, allows operation with very low operating voltages. The process sequence for making this microcathode is based on the process of developing a silicon-on-insulator (SOI) island 16 This paper size applies to Chinese national standards ( CNS) A4 specification (2 丨 〇 / 297 g t) (Please read the notes on the back before filling this page) Scripture ^ "Printed by the Ministry of Standards Bureau Consumer Cooperatives Λ7 B7 V. Description of the invention (16) Sequence "Sparlas and MacDonald's" Fabrication and Operation of S i 1 ie on Field E missi "published in IEDM Technical Digest, Washington, DC 1991, ρ ·· 2 09 The details of this process are disclosed in o.ii. .C a til ode A rray _s. ") _ ", and this article is hereby incorporated by reference. -The controlled electrode array (not shown) can be placed between the extraction cathode array 203 and the anode array 204, and brought to a negative control potential Vc relative to this extraction electrode in order to reduce this radiation Current to part of uncontrolled radiation current. For some pattern generator applications, as described above, a beam array (not shown) is integrated along the direction of these beams into a multi-beam source downstream of the deflector array 2 05, 2 06 2 on. See U.S. Patent 5,126,827 (US Patent 5,126,827) and NC MacDonald et al. Published in Proceeding SPIE 2 5 2 2 (July 1 9 9 5) pp. 2 2 0 -2 2 9 Articles on such integration are also hereby cited as references in this case. This source structure 2 is for further control of the conventional control electronics 220 (not shown, which is located outside of this plan). The control electron 2 2 provides a control signal and a control acceleration voltage to the multi-beam source 2. In a specific embodiment, it is constituted by a circuit, for example, formed by a traditional integrated circuit manufacturing technology, and the circuit is at least Partially integrated on this substrate 201. .. (light) beam clustering combination 6, generated by multi-beam source 2, then '17 This paper size applies Chinese National Standard (CNS) A4 specification (21〇X 297 photo) (Please read the note on the back first Please fill in this page again), 1T. Line. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ______ ^ B7 V. Description of the invention (") 'Then the optical (lens) is combined by light focusing 4. The fourth figure A shows the general Beam and the cross section of the combined optical lens 4. The focusing of the combined light (lens) 4 is in a unit (that is, as if it is a single beam), with a better and shorter beam path. Source 2 transmits a beam-gathering combination 6 to this target 3, thereby minimizing the interaction of the beam. In a specific embodiment, the beam-gathering combination optics (lens) 6 includes a conventional charged particle beam accelerator 401 to accelerate Beam focusing combination 6 to a desired final (light) beam energy, a conventional focusing system (稜鏡) 4 0 2 is used to focus (or defocus) (light) beam focusing combination 6, and a conventional χ-γ Bias 4〇4 is used to deflect the beam focusing combination 6 to a specific position of this target 403. The beam focusing combination optics (lens) 4 is used in the electron beam pattern generator. For design factors, such as this Electron source 2 is opposite to the conventional quasi-point electron source and is dense in its cross-sectional size. A short, complete (light) beam path length is also desirable, and Other (light) beam-gathering combinations, viewpoints, such as changing beam currents, etc. Because of this beam-gathering combination, optical (lens) 4 systems treat these (light) as if they were a single (light) beam ) Beam, so there is no reason for any difference effect to exist downstream of this source 2. The fourth figure B shows additional details to better explain the structure in the fourth figure A. .. particle source 2 Generate an electron beam_, a positive potential relative to the cathode array in this source 2 ', which passes through the accelerator electrode' This paper size applies Chinese national standards. (CNS) A4 size (210X297 cm) (Please Read the note on the back first Please fill in this page for further information),-° line A7 B7 V. An opening on the 401 (18) 401. A limiting aperture 4 12 is set. It is biased towards the line, and then by a shot lens 4 Accompanied by 0 2. (Please note here that this biased and focused 稜鏡 structure is in a different order from that in Figure 4A.) The target is not shown in Figure 4

I B. In another embodiment, the multi-beam generator includes an ion emitter array with a micro-blanker and a micro-deflector manufactured in this source. (Conventional design) Accelerates the optical depletion of ions to form an array image on a target substrate. A suitable particle source is well known in this art. See, for example, U.S. Patent No. 4,902, 898 to Jones et al. It is hereby incorporated by reference. (Please refer in particular to Figures VIII, IX, and XX). Appropriate accelerated ion optics (lens) structures are conventional techniques in this art. See, for example, US Patent No. 4,985,634 (U.S. Patent

No. 4,985,634), also referred to herein as a reference. The invention is suitable for various applications including lithography, inspection and microscopy. The charged particle beam needs to have high resolution, high average current and (light) beam control. Printed by a member of the Central Standards Bureau of the Ministry of Economic Affairs and a Consumer Cooperative (Please read the notes on the back. Then leave this page) Line-Although the present invention has been described and exemplified by specific embodiments, it is clear that this is only By way of illustration, the present invention is not limited to this bamboo shoot illustration. The spirit and scope of the present invention are shown in the scope of the attached patent application. 19 This paper size applies to Chinese National Standard (CNS) Λ4 specification (210X 297 male green)

Claims (1)

S Π 〇5 7 4 9 Α8 Β8 C8 D8 Employees of the Central Bureau of Standards and Quarantine Bureau of the Ministry of Economic Affairs # Cooperation and printing of the patent application scope 1. A pattern generator, including: an electronic source, the source includes a radioactive element from another field Array, any one of the elements generates another electron beam; a beam-combining combination optics (lens) is set up and used as a beam-combining combination ..... 1 receives the individual electron beams to accelerate and control the False electron beams; and * A target position is located at the beam-combining-combining lens, which guides the focused combination of these beams. 2. The pattern generator according to item 1 of the scope of patent application, wherein the array of the individual radioactive elements is a two-dimensional array. 3. Any of the pattern generators described in item 1 of the patent scope of claim g ', the radioactive element blinks independently (blank and non-blank). 4. The pattern generator according to item 1 of the scope of the patent application, wherein the electron source flashes the radioactive elements of the group brightly and darkly. 5. The pattern generator according to item 1 of the scope of patent application, wherein any one of the radioactive elements is supplied with a source potential, and the source potential of any of the radioactive elements is independently controlled. 6. The pattern generator according to item 1 of the scope of the patent application, wherein any one of the radioactive elements is supplied with an extraction potential), and the extraction electric potential system of any of the radiation elements is independently controlled. > 7 · The pattern generator described in item 1 of the scope of patent application, which relates to any one of the radioactive elements further includes an independent biasing element for biasing the electrons emitted by the radioactive element. 20 (Please read the notes on the back before filling in this page) ^ & General Chinese ~ National standard (0 milk) 6 4 specifications (210 father 297 mm) Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A8 BS, G8 DS 々, patent scope 8 · If applied The pattern generator described in the first item of the patent scope further includes an array of deflectors integrated with the electric source to deflect individual electric beams. 9. The pattern generator according to item 8 of the scope of the patent application, wherein the deflector array includes first and second deflectors associated with any of the individual radioactive elements to use the The electron beam is deflected into two orthogonal directions (. Orthogonal). 10. The pattern generator according to item 1 of the scope of the patent application, further comprising an accelerator array integrated with the electron source for individually accelerating the electron beams. ] 1. The pattern generator as described in item 1 of the application, wherein the beam-concentrating combination optics (lens) includes a deflector for deflecting the entire combination of these individual electron beams. 12. The pattern generator of claim 7, wherein the deflector essentially deflects any one of the electron beams equally. 1 3. The pattern generator as described in item 1 of the scope of the patent application, wherein the beam-concentrating combination optics (lens) includes a focusing element for focusing the focusing combination of the individual electron beams. 1 4 The pattern generator according to item 1 of the scope of patent application, wherein the beam-concentrating combination optics (lens) accelerates the individual electron beams by an accelerator element. 1 5. The pattern generator according to item 1 of the patent application, wherein the pattern generator forms a pattern on the work by a vector scan. . This paper size applies to China National Standard (CNS) A4 specification (21 〇X 297 mm) (please read the note 2 on the back before filling out this page), speech line A8 B8 386248 .___ S ___ ^ ________— VI. Patent application park 16. The pattern generator according to item 1 of the patent application scope, wherein the pattern generator forms a pattern on a work by a raster scan. '17. The pattern generator according to item 1 of the scope of patent application ', wherein the target position is a support of a substrate. '. 18. A method for providing a multi-beam clustering combination' includes the following steps: _ providing an electron field radiation source configured to generate a multi-beam in an array. In: manipulation generated from the array The individual electron beams in it are in close proximity to the radiation source; and thereafter, the multiple beams are guided as a single electron beam and accelerated to the target. 19. The method of claim 18, wherein the manipulating step includes eliciting the individual electron beams. 20. The method of claim 18, wherein the manipulating step includes independently accelerating the individual electron beams. 2 1. The method as described in item 18 of the scope of patent application, wherein the manipulation step includes independently deflecting the individual electron beams transversely in a propagation direction of the individual electron beams. 22. The method of claim 18, wherein the step of accelerating comprises accelerating the plurality of beams to a predetermined final energy. Printed by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 2 3. The method as described in item 18 of the scope of patent application, wherein the guiding step includes focusing the multi-bundle onto the target. 24. The method as described in claim 18, wherein the guiding step includes deflecting the plurality of beams to a specific position of the target. 22 This paper size is applicable to China K-house standard (CNS) A4 specification (210X297 mm)