TW385620B - An organic light emitting device containing a protection layer - Google Patents
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A7 B7 五、發明说明.(1 ) 經濟部中央標準局員工消费合作社印製 登明範面 本發明係關於在電洞輸送層與ITO陽極.層之間包含保護 層之有機光發射裝置。 i明背景 有機光發射裝置(OLEDs)係包含數個層之光發射裝置, 其中一個層包括可經由在裝置兩端施加電壓而電激發光之 有機材料’ c. W. Tang等人,應用物理函件(Appi. Phys. Lett) 51, 913 (1987)。已證實某些〇LEDs具有使用作爲 以LCD爲基礎之·全色平面颟示之資際替代技術的足夠亮度 、顏色範面及操作壽命(S.R. Forrest,P.E. Burrows and Μ.E. Thompson),電射焦點世界(Laser Focus World), 1995年2月)。此外,由於使用於此等裝置中之許多有機薄 貘在可見光譜區域爲透明,因而其可獲得全新類型的顯示 像元,其中紅(R)、綠(G)、及藍色(B)發射層係安置於垂 直堆疊的形體,以提供簡單的製造方法、小的R-G-B像元 尺寸、及大的填充因子。 代表朝向實現高解析度、可獨立编址的堆臺像元 之重要步驟的透明OLED(TOLED)已發表於躅際專利申請 案第PCT/US95/15790及PCT/US97/02681。據發表此等 TOLEDs當關閉時可具有大於71%之透明度,及當裝置打 開時,其可高故率地(接近1%量子效率)自頂部及底部裝置 表面兩者發光。此TOLED使手透明的銦錫氧化物(ITO)作 爲電洞注入電極,及使用Mg-Ag-ITO層供電(子注入用。其 發表一種使用Mg-Ag-ITO電極作爲供堆疊於TOLED上方 -4- 本紙张尺度適用中國D家標率(CNS ) A规^ ( 21〇χ297公缝) (請先閱讀背面之注意事項再填寫本頁) Γ 裝- 訂 五、發明説明(2 ) A7 B7 經濟部中央標準局員工消費合作社印裝 之第二個不同顏色發射OLED用之電洞注入觸點的裝置。 在包括多個垂直堆疊層之堆4〇LED(S〇i^ED)中之各裝置 可獨立编址,及經由透明有機層、透明觸點及玻璃基材發 出其各自的特性顏色,而使裝置可發出可經由改變紅色及 藍色發射層之相對輸出所產生之任何顏色。 因此,PCT/US95/15790之公告提供可利用在可調整顏 色之顯示裝置中所供應之外部功率而獨立改變及控制強度 和顏色之整體OLED的揭示内容。如此,PCT/US95/15790 説明獲致由緊密像元尺寸而成爲可行之提供高影像解析度 之整體、全色像元之原理》此外,可利用輿先前技藝方法 比較,相當低成本的製造技術於製造此種裝置。 其結構以使用有機光電子材料之層爲基礎之裝置一般係 依賴造成發光的常見機構、此機構典型卜係以央入電荷之 輻射再結合爲基礎。明確言之,有機光發射裝置包括至少 兩個分離裝置之陽極和陰極之薄的有機層。此等層之其中 —者之材料係特別根據材料輸送電洞之能加而選擇(”電洞 輸送層"或"HTL”),及其他層之其中一者之材料係特別根 據其輸送電子之能力而選定(《電子輸送層”或METL”)。藉 由此一構造,當施加於陽極之位能較施加於陰極之位能高 時,可將裝置視爲具有順向偏麽之二極體。在此等偏蜃條 件下,陽桎將電洞(正電荷載鳢)注入至電洞輸送層中,同 時陰桎將電子注入至電子輸样層中》因此輿陽極相鄰之部 分的發光介質形成電洞注入及輸送區,而與'陰極相鄰之部 分的發光介質形成電洞注入及輸送區。注入的電洞及電子 — ·-—---裝—— * t (請先閲讀背面之注袁事項再填寫本頁) 訂 本紙银尺度適用中國國家樣隼(CNS ) A4規格(21〇><297公釐〉 A7 B7 ------- 五、發明说明(3 ) 各初向帶相反電荷的電極移動。當電子舆電_ 分子上時’形成夫任克激發予(Frenkel e?ccit^|| ^ ^ 短命狀態之再結合設想成電子自其傳導位 ,益發生弛緩,在某些情沉下,優先經由光電_$ $ 在此典型薄層有機裝置之操作機構之觀點下,電教發。 包括自各電極接受流動電荷載體(電子及電洞)之發光區^ 產生電激發光發射之材料經常係作爲電子輪送層 輸送層之相同材料。將此種裝置稱爲具有單—不均質$ 。或者電激發光材科可存在於在電洞輸送層輿電子铸 間之個別的發射層中,此稱爲雙貧不均質結構。 送肩 除了使發射材料存在成爲在電予输送層或電祠輪堤 之主要材料外,發射材料亦可存在爲包含在主材科内之^ 雖费I 〇存在作爲主对科及摻雜劑之材料係經選擇 ,以致在 經濟部中央標车局貝工消费合作社印装 主材科輿掺雜劑材科之間有足夠的能量傳送。希望OLEDs 係使用在以接近選定之光譜區域爲中心之相當窄的能帶2 提供電激發光發射之材料製成,此光譜區诚相當於爲 要顏色ϋ及跋-之其中之—,以致其π: OLED或S〇LED中之有色層。尤其希望此等化合物=礎代 可經由選择性地改變取代基或經由修改產生發射尤等射 合物之結構而改變發射之化合物種類。除此之外,=射 料必須能產生OLED所可接受的電性質。此外,此等而容 料及摻雄劑材料以可併入使用可利用方便的製造技f 易地併入於電洞輸送層或電子輸送層中1起妨讨 OLED中較佳。 6 本紙張尺度適财關 A7 B7五、發明説明(4 ) 經濟部中央標隼局負工消费合作社印装 來自眞空沉積分子有機光發射裝置之有效電激發光的展 示已激起其作爲發射平面顯示之潛在應用的興趣。爲有效 用於低成本的主動陣列類"'示,需展示可輿像元電子學整合 的裝置結構。習知的OLED係成長於透明暘極諸如ITO上 ,及發出的光係透過基材觀看,而使輿電子组件諸如矽基 顯示驅動器之整合複雜化。因此希望發展出一種經由頂部 的透明觸點發光之OLED。成長於矽上具有透明ΊΤΟ及半 透明Au或A1頂端陽極之表面發射聚合物基OLED已經展示 ,D.R. Baigent等人,應用物理函件,65,2636 (1994) ;H.H. Kim等人,光波技術期刊(J. Lightwave Technol·) ,12 , 2107 (1994)° 分子OLED舆夺之類似整合係使用透纳Si02 介面達成,Kim等人。然而,透納介面將增加裝置操作電 I,且可在諸如最近發表的透明TOLEDs之結構中避免, V· Bulovic等人,自然(Nature)380,29(1996) ; G. Gu 等人,應用物理函件,68,2606(1996),其主要可成長 於矽基材上。然而,TOLED陽極形成輿基材直接接觸的電 極觸點,"底部觸點”,然而對使用n-波道場效電晶髏 (NFETs),諸如非晶形矽NFETs之顯示驅動器,將希望 OLED之底部觸點爲陰極。此將需要製造反轉 OLEDs(IOLEDs),即將各層順序置於基材上之次序逆轉 的装置。例如,對單一不均質結構的OLED,將電子注入 陰極層沉積於基材上,電予輸送層沉積於陰(極上,電洞輸 送層沉積於電子輸送層上,及電洞注入陽極層沉積於電洞 » — , J C. (請先閱讀背面之注意事項再填寫本頁) 訂 -1 />.-rv 本紙張尺度適用中國國家標率(CNS > A4規格(2丨0X297公楚) A7 B7五、發明説明(5 ) 經濟部中央標準局員工消费合作社印繁 輪送層上。 因此製造此種IOLEDs將需要將IT〇陽極層直接或間接喷 鍍沉積於相當易碎的有碱薄膜上。由於ΙΤ〇層典型上係使 用習知的噴鍍或法沉積,以產生具有自約500埃系 高達4000埃之厚,因此希望此等層在可能的最高沉 積速率下沉積,製備此等層所需之時間。例如,已 發現傘然當1於裸露基材上時,ιτο層可以達聲 分錢50-100埃以上之速率沉積β但如IT〇係直接沉積於宥 機層或典型上沉積於數個有機層上之Mg:Ag表面上時,沉 積速率可能僅有約2-5埃/分鐘。由於有機層當受到在較高 ITO沉積速率下所使用之高能量粒子束時,其高度易受損 壞,因而較高的沉積速率會訝下方有機層造成實質的損壞 ,因此而使OLED之整體性能造成令人無法接受的大惡化 。當將OLED之ITO層沉積於此種易碎的有機表面上時, 如ITO層可以較迄今爲止所可行者實質上更高的沉積速率 沉積將較佳》 此外,如可改良電洞注入層之電洞注入特性將較佳。分 別已證實献花青銅(CuPc)可在習知的〇LEDs中作爲有效的 電洞注入層,S.A. VanSlyke等人,應用物理函件,69, 216〇(1996)及美國專利第4,720,432號,及先前已經確立 3,4,9,10-苣四羧二酸酐(?1^〇八)爲有故電洞輸送層, P.E. Burrows等人,應用物厘函件,64,2285(1994), V. Bulovic等人,化學物理(Chem· Phys.)il0,1(1996) •,及V. Bulovic等人,化學物理,210,13(1996)。此外 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 1#先聞讀背魟之泣表事項戽填寫本頁)A7 B7 V. Description of the invention. (1) Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. The present invention relates to an organic light emitting device including a protective layer between the hole transport layer and the ITO anode layer. Bright background organic light emitting devices (OLEDs) are light emitting devices that include several layers, one of which includes an organic material that can electrically excite light by applying a voltage across the device 'c. W. Tang et al., Applied Physics Letter (Appi. Phys. Lett) 51, 913 (1987). It has been confirmed that certain LEDs have sufficient brightness, color range, and operating life (SR Forrest, PE Burrows and M.E. Thompson), which are used as an alternative to LCD-based full-color plane display technology. Laser Focus World, February 1995). In addition, since many organic thin films used in these devices are transparent in the visible spectral region, they can obtain entirely new types of display pixels, among which red (R), green (G), and blue (B) emissions The layers are arranged in a vertically stacked shape to provide a simple manufacturing method, a small RGB pixel size, and a large fill factor. Transparent OLEDs (TOLEDs), which represent important steps towards achieving high-resolution, independently addressable stacking pixels, have been published in International Patent Applications PCT / US95 / 15790 and PCT / US97 / 02681. It is reported that these TOLEDs can have a transparency of greater than 71% when turned off, and can emit light with high probability (close to 1% quantum efficiency) from both the top and bottom device surfaces when the device is turned on. This TOLED uses hand-transparent indium tin oxide (ITO) as a hole injection electrode, and uses Mg-Ag-ITO layer for power supply (for sub-injection. It published a method using Mg-Ag-ITO electrode for stacking on top of TOLED- 4- This paper scale is applicable to China D house standard rate (CNS) A rule ^ (21〇χ297 seam) (Please read the precautions on the back before filling this page) Γ Binding-Order V. Description of the invention (2) A7 B7 Device of the second different-color emitting OLED hole injection contact printed on the staff consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. Each of a stack of 40 LEDs (S0 ^ ED) including a plurality of vertically stacked layers The device can be addressed independently and emit its own characteristic color through the transparent organic layer, transparent contacts, and glass substrate, so that the device can emit any color that can be produced by changing the relative output of the red and blue emitting layers. The PCT / US95 / 15790 announcement provides the disclosure of an overall OLED that can use external power supplied in a color-adjustable display device to independently change and control the intensity and color. In this way, the PCT / US95 / 15790 description was obtained by close Pixel size Principles of Feasibility of Providing Overall, Full-Color Pixels with High Image Resolution "In addition, this device can be manufactured using relatively low-cost manufacturing techniques compared to previous techniques. Its structure is based on the use of layers of organic optoelectronic materials The device generally relies on a common mechanism that causes light emission. The typical mechanism of this mechanism is based on the recombination of centrally charged radiation. Specifically, the organic light emitting device includes a thin organic layer of at least two anodes and cathodes of the separation device. The material of one of these layers is selected specifically based on the energy addition of the material transport hole ("hole transport layer" or "HTL"), and the material of one of the other layers is specifically based on its The ability to transport electrons is selected ("electron transport layer" or METL "). With this structure, when the potential energy applied to the anode is higher than the potential energy applied to the cathode, can the device be regarded as having a forward bias? Diode. Under these bias conditions, impotence injects holes (positive charge) into the hole transport layer, and at the same time injects electrons into the electron sample layer. " Therefore, the light-emitting medium adjacent to the anode forms a hole injection and transportation area, and the light-emitting medium adjacent to the cathode forms a hole injection and transportation area. The injected holes and electrons-·----- Packing-* t (Please read the note on the back before filling in this page) The silver scale of the paper is applicable to the Chinese National Sample (CNS) A4 specification (21〇 > < 297 mm) A7 B7 ---- --- V. Description of the invention (3) Each initial move to an electrode with opposite charge. When the electron public electricity _ is on the molecule, 'Frenkel e? Ccit ^ || ^ ^ short-lived state recombination It is conceived that the electrons will relax from their conduction potential. In some cases, it will be preferentially passed through photoelectricity. From the viewpoint of the operating mechanism of this typical thin-layer organic device, electricity is taught. Including the light-emitting area that receives the flow of charge carriers (electrons and holes) from each electrode ^ The materials that generate the electrically excited light emission are often the same materials used as the electron carousel transport layer. Such a device is referred to as having a single-heterogeneous $. Alternatively, the electro-optically excited material family may exist in a separate emitting layer in the hole transport layer and the electron casting room, which is called a double-poor heterogeneous structure. In addition to making the emission material the main material in the electric transport layer or the electric temple embankment, the emission material can also be included in the main material section. ^ Although fee I 〇 exists as the main pair and dopant The materials are selected so that there is sufficient energy transmission between the main materials department and the dopant materials department of the Central Bureau of Standard Vehicles of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives. It is hoped that OLEDs are made of materials that provide electrically excited light emission in a relatively narrow energy band 2 centered near the selected spectral region. This spectral region is equivalent to the need to color and postscript-one of them-so that π: Colored layer in OLED or SOLED. It is particularly desirable that these compounds = basic generations. The types of compounds emitted can be changed by selectively changing substituents or by modifying the structure of the emitting emissive compounds. In addition, the emitter must be able to produce acceptable electrical properties for the OLED. In addition, these materials and androgen-doped materials may be easily incorporated into the hole transport layer or the electron transport layer by using a convenient manufacturing technique. It may be preferable to use them in an OLED. 6 This paper is suitable for financial standards A7 B7 V. Description of the invention (4) The display of the effective electro-excitation light from the airborne molecular organic light emitting device printed by the Office of the Central Bureau of Standards, Ministry of Economic Affairs, and the Consumer Cooperatives has inspired it as an emission plane Potential applications shown. In order to be effectively used for low-cost active arrays, it is necessary to show a device structure capable of integrating pixel electronics. Conventional OLEDs are grown on transparent electrodes such as ITO, and the emitted light is viewed through the substrate, which complicates the integration of electronic components such as silicon-based display drivers. It is therefore desirable to develop an OLED that emits light via transparent contacts on the top. Surface-emitting polymer-based OLEDs grown on silicon with transparent ΊΤ 半 and translucent Au or A1 top anodes have been shown, DR Baigent et al., Applied Physics Letters, 65, 2636 (1994); HH Kim et al., Journal of Lightwave Technology ( J. Lightwave Technol.), 12, 2107 (1994) Similar integration of molecular OLED capture was achieved using the Turner Si02 interface, Kim et al. However, the Turner interface will increase the operating power of the device and can be avoided in structures such as the recently published transparent TOLEDs, V. Bulovic et al., Nature 380, 29 (1996); G. Gu et al., Applications Physical Letter, 68, 2606 (1996), which can be grown mainly on silicon substrates. However, TOLED anodes form electrode contacts that directly contact the substrate, "bottom contacts". However, for display drivers using n-channel field effect transistors (NFETs), such as amorphous silicon NFETs, OLEDs The bottom contact is the cathode. This will require the fabrication of inverting OLEDs (IOLEDs), which reverse the order of the layers on the substrate. For example, for OLEDs with a single heterogeneous structure, electrons are injected into the cathode layer and deposited on the substrate Above, the electric pre-transport layer is deposited on the cathode (electrode transport layer is deposited on the electron transport layer, and the hole injection anode layer is deposited on the hole »—, J C. (Please read the precautions on the back before filling in this Page) Order-1 />.-rv This paper size applies to China's national standard (CNS > A4 specification (2 丨 0X297)) A7 B7 V. Description of the invention (5) Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Therefore, the fabrication of such IOLEDs will require direct or indirect sputtering deposition of the IT0 anode layer on a rather fragile alkali-based film. Since the ITO layer is typically deposited by conventional sputtering or method To produce with about 5 The thickness of 00 Angstroms is as high as 4000 Angstroms, so it is desirable that these layers be deposited at the highest possible deposition rate and the time required to prepare these layers. For example, it has been found that when 1 is on an exposed substrate, the ιτο layer can The deposition rate of β is more than 50-100 angstroms. However, if IT0 is directly deposited on the machine layer or the Mg: Ag surface that is typically deposited on several organic layers, the deposition rate may only be about 2- 5 Angstroms / minute. Because the organic layer is highly vulnerable to damage when subjected to high energy particle beams used at higher ITO deposition rates, higher deposition rates can surprise the underlying organic layer and cause substantial damage. The OLED's overall performance caused an unacceptably large deterioration. When the ITO layer of the OLED is deposited on such a fragile organic surface, the ITO layer can be deposited at a substantially higher deposition rate than what has been feasible so far. "It will be better" In addition, if the hole injection characteristics of the hole injection layer can be improved, it will be proved that CuPc can be used as an effective hole injection layer in conventional OLEDs, SA VanSlyke et al. , Applied Physics No. 69, 216〇 (1996) and U.S. Patent No. 4,720,432, and 3,4,9,10-chitratetracarboxylic dianhydride (? 1 ^ 08) has been previously established as a hole transporting layer, PE Burrows Correspondence of Applied Materials, 64, 2285 (1994), V. Bulovic et al., Chemical Physics (Chem. Phys.) Il0, 1 (1996) •, and V. Bulovic et al., Chemical Physics, 210, 13 (1996). In addition, this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm).
訂 1 * A7 __B7五、發明説明(6 ) 經濟部中央標隼局貝工消费合作社印繁 ,先前已證·實在具有ITO電極沉積於薄膜表面上之光檢波 器結構中使用PTCDA,F.F. So等人,IEEE. Trans. Electron. Devices 36,%6(1989),此材料可承受 ITO之 噴鍍沉積,而對其傳導性質有最小的降解。 習知的顯示,包括LCD(液晶)及習知的〇LED(有機光發 射裝置)顯示,具有不甚適合於明亮的環境光線下觀看的额 外缺點。如圏21所説明,自明亮光源L,諸如太陽,發出 之光R,自習知顯示D之一或多個層(主要爲金屬層)反射開 來。反射光R干援觀看者V觀看帶著由顯示D所產生之光I 之訊息的能力,因而降低由顯示D所產生之影像的感知對 比。因此,需要可在明亮的環境光線條件下觀看之具有改 良對比的OLED頰示。 發明之概述 本發明係關於包括用於產生電激發光之不均質結構之 OLEDs,及此種〇LEDs之製造方法,其中不均質結構在 索洞輸送層輿ITO陽拯層之間包括保護下方之有機層使免 受ITO喷鍍沉積程序中之損壞的層。 本發明之其中一個特性爲保護層在OLEDs中不僅可用於 保護下方的有截層,並且保護層亦可提供作爲電洞注入増 進層。如發表於1997年5月29曰提出申請之美國编號第 08/865,491號中之保護層亦可作爲電洞注入增進層之本發 明之較佳具髏實例的例子包括PTCDA或相闞伸芳基基化合 物。 ' 本發明更關於製餚OLED之ITO層之改良方法,其中在 -9- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背®'之注兔事項再填寫本頁) .裝 訂 五、發明説明(7 ) A7 B7 經濟部中央標隼局貝工消费合作社印褽 製備ITO層之過程中,, 度後,自相务饭的逮率於沉積1τ〇層建到足夠厚 速率,以致可防止寿下关“一吸阿的/儿稚 .s 万層的損壞β更明確&之,本發明 (另-態樣係關於在埃到約50埃至約200埃之層厚度後, 將起始f積速率增加纟”至1。倍之倍率的眞妓積法。再 更明確言(,本發明之轉樣係Μ於起始沉積速率約爲2-5 埃/分鐘’及最终沉積速率至少約5〇 6〇埃/分鐘之方法。 本發明又更關於高對比、透明的有機光發射裝置 (TOLED)顯不’其中頰示之對比係經由將自顯示反射之光 量減至最少而改良。此係利用具有T〇LEE^構之類示及在 TOLED顯示後方之低反射比吸收器之配置而完成。 TOLED具有實質上透明的傳導層,固此不會如習知 OLEDs之金屬傳導層般的反射光。設置kT〇led顯示後 方之低反射比的吸收器可吸收通過T〇lEE)顯示之光。入射 於TOLEDil示上之大部分的光被低反射比的吸收器吸收, 只有極少的入射光線反射回觀看者。此種形態提供由顯示 所顆示影像之改良的寿比。本發明之顯示亦展現不同顏色 影像之改良訝比。 本發明更關於包括主化合物及摻雜劑化合物之OLED, 巧·使用其知·合於在以造近其中一個主要顏色之飽和波長爲 中心之相當狹窄的能帶中產生發射。 熟悉技藝人士由揭示發明之詳細説明當可明瞭本發明之 進一步目的及優點〇 ' -10- 本紙張尺度制中關家_ ( 210X297^· (請先閱讀背ig之注*-事項再填寫本頁) 裝 訂 Α7 Β7 五、發明説明(8 ) 附ϋ之簡單説明 圈1顯示單一不均質結構裝置之代表性的IOLED » 肩2類示具有作爲電洞洼入增進層之PTCD Α及Cu Pc保護 加蓋層(PCLs:Protective cap Uyer)之0.05 毫米IOLED與 沒有PCL之裝置之順向偏壓電流-電壓(I-V)特性。 蹰3顯示® 2中之IOLEDs之發光強度對電流(L-I)之關係。 圈4顯示具有電洞注入增進層之IOLEDs相較於不具有電 洞注入增進層之習知Alq^OLED^EL發射光譜之形狀的 I-V特性。 ’ - 圈5顯示在ITO陽極層輿NPDf洞輸送層之間有及沒有 60埃PTCDA層之OLED之電流對電壓。 圈6顯示包含分兩隋段製備得之ITO層之OLED的橫剖面 ,第一階段係使用低ITO沉積速率製備得,及第二睹段保 使用實質上較高的ITO沉積速率製備得。 圈7颟示以200("標準”立方公分/分鐘)之Ar流量及在5毫 私、爾之蜃力及+ 5瓦RF功率下沉積於玻璃上之1〇〇〇埃ΠΌ 層之電阻率成02通量之函數的變化情形。 Β 8顯示在45瓦RF功率下沉積之1〇〇〇埃厚ΙΤ〇層之吸收 成波長之函數瓦通量之函數的變化情形(對2〇〇 scctn之 經濟部中央標準局員工消费合作社印製Order 1 * A7 __B7 V. Description of the invention (6) Printed by Fangong Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs, it has been previously verified that PTCDA, FF So, etc. are used in the structure of the photodetector with ITO electrodes deposited on the film surface Human, IEEE. Trans. Electron. Devices 36,% 6 (1989). This material can withstand the spray deposition of ITO with minimal degradation of its conductive properties. Conventional displays, including LCD (liquid crystal) and conventional OLED (organic light emitting device) displays, have additional disadvantages that are not well suited for viewing under bright ambient light. As explained in 圏 21, from a bright light source L, such as the sun, the light R is emitted from one or more layers (mainly metal layers) of the display D. The reflected light R interferes with the viewer's ability to view the message with light I produced by display D, thereby reducing the perceptual comparison of the image produced by display D. Therefore, there is a need for OLED cheek displays with improved contrast that can be viewed in bright ambient light conditions. SUMMARY OF THE INVENTION The present invention relates to OLEDs including a heterogeneous structure for generating electrical excitation light, and a method for manufacturing such OLEDs, in which the heterogeneous structure is included between the cable transport layer and the ITO anode layer to protect the underlying layer. The organic layer is a layer that is protected from damage during the ITO sputtering deposition process. One of the characteristics of the present invention is that the protective layer in the OLEDs can not only be used to protect the undercut layer, but also the protective layer can be provided as a hole injection implantation layer. For example, the protective layer in U.S. Serial No. 08 / 865,491, filed on May 29, 1997, can also be used as a hole injection enhancement layer. Examples of preferred embodiments of the present invention include PTCDA or Nobuyuki Ayaka Based compounds. '' The present invention is more about the improved method of ITO layer for OLED, in which the national paper (CNS) A4 specification (210X297 mm) is applied at -9- this paper size (please read the note on the back of the ® before filling in This page). Binding V. Description of the invention (7) A7 B7 In the process of preparing the ITO layer by the seal of the Shell Industry Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs, the capture rate of self-service meals was deposited at 1τ0 layer after the degree To a sufficiently thick rate so that Shou Shimonoseki can prevent the damage of a single suction / infant. S layer. Β is more specific & the present invention (another aspect is about 50 to about 200 angstroms to about 200 angstroms) After the thickness of the layer, the initial f product rate is increased by 纟 "to 1. The doubling rate of the prostitute product method. To be more specific (the transfer sample of the present invention is about 2-5 at the initial deposition rate). Angstroms / minute 'and a final deposition rate of at least about 5060 Angstroms / minute. The present invention is more about a high-contrast, transparent organic light-emitting device (TOLED) display, wherein the contrast shown on the cheek is determined by Improved by minimizing the amount of reflected light. This is based on the TOLEDE structure and after the TOLED display The configuration of the low reflectance absorber is completed. TOLED has a substantially transparent conductive layer, so it will not reflect light like the conventional metal conductive layer of OLEDs. Set a low reflectance absorber behind kT〇led display It can absorb light displayed by TOLEE). Most of the light incident on the TOLEDil display is absorbed by a low reflectance absorber, and only a small amount of incident light is reflected back to the viewer. This form provides the image shown by the display The improved life ratio. The display of the present invention also shows the improved surprise ratio of different color images. The present invention is more about an OLED including a main compound and a dopant compound. The saturation wavelength of the color generates emission in a rather narrow energy band centered on the person. Those skilled in the art will know the further objects and advantages of the present invention by revealing the detailed description of the invention. 0 '-10- Guan Jia in the paper scale system _ (210X297 ^ · (Please read the note of back ig *-matter before filling out this page) Binding Α7 Β7 V. Description of the invention (8) Attached brief description Circle 1 shows the generation of a single heterogeneous structure device Exemplary IOLED »Shoulder 2 shows the forward bias current of 0.05mm IOLED with PTCD Α and Cu Pc protective capping layer (PCLs: Protective cap Uyer) as a hole penetration enhancement layer and devices without PCL- Voltage (IV) characteristics. 蹰 3 shows the relationship between the luminous intensity and current (LI) of IOLEDs in ® 2. Circle 4 shows that IOLEDs with a hole injection enhancement layer are compared to the conventional Alq without a hole injection enhancement layer. ^ OLED ^ EL characteristics of the shape of the emission spectrum. ’-Circle 5 shows the current versus voltage of the OLED with and without the 60 angstrom PTDCA layer between the ITO anode layer and the NPDf hole transport layer. Circle 6 shows a cross section of an OLED comprising an ITO layer prepared in two stages. The first stage is prepared using a low ITO deposition rate, and the second stage is prepared using a substantially higher ITO deposition rate. Circle 7 shows the resistance of a layer of 200 (" standard "cubic centimeters per minute) of Ar and a 1000 Angstrom layer deposited on glass at 5 milliseconds, a force of 5 millivolts, and +5 watts of RF power. The rate is a function of the flux as a function of flux. B 8 shows the change in the function of watt flux absorbed as a function of wavelength for a 1000 Å thick ITO layer deposited at 45 watts of RF power (for 200). Printed by scctn Consumer Cooperatives, Central Bureau of Standards, Ministry of Economic Affairs
Ar流量、5毫托爾之壓力、.0.8埃/秒之速率及於玻璃基材 上)。 ,圈9類示使用較高ITO沉積速率製造之to LED之I-V特性 (如小的空心圆團所示)與ITO層完全係在鉉低IT〇沉積速 率下製備得之TOLED之I-V特性(虚線)的比較。 二 11- 本紙張尺度適用中國國家標準(CNS ) Α4規格( 五、發明説明(9 ) A7 B7 經濟部中央標準局兵工消费合作社印輦 圈10顯示單一不均質結構裝置之代表性OLED » 躅11顯示參(5_羥基-喹'«啉)鋁、參(5-羥基-喹啉)鋁及笑 (5-羥基-喳喏啉)鎵之光子‘激發光(PL)先譜。 / 團12顯示包含參(5-羥基-喹喏啉)鋁之發射層,有及沒有 祀學式III之雙苯基方形酸錄(squariliutn)化合物之内秀, 爲摻雜劑之OLED的電激發光光譜_。 ’ 圈13顯示有及沒有化學式VI之雙苯基方形酸婊化合物之、 内Μ作爲接雄劑之參(5-巍基-峻隹淋)艇的ι_ν特性。 巧14顯示主化合物Alq3及Alx3之光子激發光光譜相較於 摻雜劑冬吸收光譜,其中摻雜劑:雙苯基方形酸鐳染料之 内鹽("BIS-OH”)、靛萆染料化合物及烯(fullerene)化合物 ,C60。 圈15蒴示摻雜劑化合物於溶液中之光子激發光光譜,雙 苯基方形酸銪染料之内鹽("BIS-OH”)(於CH2CI2)、靛藍 染料化合物(於DMSO)及C60(於甲笨)。 躏16 _示TPD-Alq3/C6()裝置之電激發光光譜成增加 Alq3主材料中之C60濃度之函數。 圈17顯击TPD-Alq3/(化學式XI之雙酚方形酸鑽“料)裝 蓽乏電漱發光光譜成Alq3主材料中之雙酚方形蜂媒摻雜劑 濃度之函數。 ’ 圈I.8#示TPD-A丨x3/(佟學式XI之雙酚方形酸鏘染料)裝 置之電激杳光光譜成ΑΓχ3主材料中之雙酴方形酸鐳摻雜射 濃度之函數。 < 圖19顯示具有1.7%靛藍染料化、合物濃度之TPD-Alx.3/靛 -12 本纸張尺度適用中國國家標準(CNS ) A4規格(2丨0X297公麥) (請先閱讀背£|'之注秦事項再填寫本頁) Γ 裝. 訂 A7 ____B7 五、發明説明(10 ) 經濟部中央標準局員工消资合作社印製 藍"染料化合物裝翟之電激發光光譜。 圈20頫示根據化學式XIII之代表性化合辑。 -圈21顯示在明亮環境光’線條件下之習知的顯示裝置。 S 22顯示在明亮環境光線條件下之根掾本發明的高對比 TOLED顯示。 圈23係根據本發明之高對比TOLED顯示之第一個具體 實例之橫剖面圈。 圈/24係根據本發明之高對比TOLED顯示之第二個具體 實例之橫剖面B。 . 圈25係根據本發明之第一個具雔實例之堆疊光發射裝置 之橫剖面圈。 " 圈26係根據本發明之第二個具體實例之堆要光發射裝置 之橫剖面圈。 圈27係根據本發明之第主個具體實例之堆要光發射裝置 之橫剖面圈。 圈28係根據本發明之一具體實例之反轉堆疊光發射裝置 疼橫剖面®» 圈29頰示具有分侔布拉格(Bragg)反射器結構之〇LED。 校佳具體實例之詳細説明 本發明現將對發明之特定較隹具體實例作詳細説明,應 瞭解此等具體實例係僅作爲説明實施例,而本發明並不受 其所限制。 本發明之OLEDs包括用於產生電爱多#不均質結構, 其可製造成單一不均質結構i雙重不均質結構。用於製備 -13- 本紙張尺度適用中賴家CNS ) A4規格(2丨GX297公釐了 . - (請先閲讀背釘之注*-事項再填寫本頁) '裝 訂 A7 B7 五、發明説明(11 ) 玉一或雙重不均質結構之有機薄膜之材料、方法及裝置, 例如,發表於美阃專利第5,554,220號,將其全體内容併 入本文爲參考资料。此處所使用之術語,,用於產生電激發光 之不均質結構保指對單一不均質結構依序包括電洞注入陽 今層、電洞輸遊層、電子輸送層、及陰極層之不均質結構 。在一或多個此等層之連續對之間可存在额外的一或多個 層。例如,對雙重不均質結構,在電洞輪送層與電子輸送 層之間包括個別的發射層。 陽極層或除極層之任一者可輿基材接觸,及各電極連結 皇可將電整輸送穿過装置,而使其自電子令送層、電洞輸 送層或個別發射層產生電激發光之電觸點。如陰極層係沉 積於基材上,則可將裝置稱爲具有反轉〇LED(I〇LED)結 耩。反轉結構亦可稱爲"OILED”結構》如用於產生電激發 光之不均質結構係包括成爲堆疊OLED(SOLED)之部分, 則個別不均質結構之電極之一或兩者可輿相郝不均質結構 之電轾接觸》或者,根據用於驅動SOLED之電器迴路,可 在堆疊中之OLEDs之相鄺電極間提供絕緣層》 經濟部中央標年局員工消费合作社印装 ;-1 裝-- - -C (請先閱.讀背面之注意事項再填寫本頁) 此處所提及之單一或雙重不均質結構係僅作爲展示具體 實現本發明之OLED可如何製造,其完全不表示本發明係 受製造所展示之層之特定材料或順序所限制《例如,單一 不均質結構典型上包括可爲不透明或透明、硬質或軟質、 及/或塑膠、金屬或玻璃之基材;第一個電極,其典型上爲 高工作函數的電洞注入陽極層,例如銦錫咸化物(ITO)陽 極層;電洞輸送層;電子輸送層;及第二個電極層,例如 •14- 本紙張尺度適用中國國家標準(CNS ) A4規格(21 Οχ 297公釐) A7 B7 五、發明説明(η )Ar flow rate, 5 mTorr pressure, .0.8 Angstrom / second rate on glass substrate). , Circle 9 shows the IV characteristics of to LEDs manufactured using higher ITO deposition rates (as shown by small hollow circles) and the ITO layer ’s IV characteristics (virtual Line). II 11- This paper size applies to Chinese National Standard (CNS) A4 specifications (V. Description of invention (9) A7 B7 Seal circle of the Military Industry Cooperative Cooperative of the Central Standards Bureau of the Ministry of Economy 10 Representative OLED showing a single heterogeneous structure device »躅11 shows the first spectrum of the photon's excitation light (PL) of ginseng (5-hydroxy-quinoline) aluminum, ginseng (5-hydroxy-quinoline) aluminum, and (5-hydroxy-quinoline) gallium. Fig. 12 shows the emission layer containing para- (5-hydroxy-quinoxaline) aluminum, with and without the biphenyl square acid squiliutn compound of formula III, which is the electro-excitation light of the dopant OLED Spectral_. 'Circle 13 shows the ι_ν characteristics of the ginseng (5-Wilky-Junlin) with and without bis-phenyl square acid hydrazone compound of formula VI with and without chemical formula. 14 shows the main compound The photon excitation light spectra of Alq3 and Alx3 are compared with the winter absorption spectrum of dopants. Among them, the dopant: the internal salt of bisphenyl square acid radium dye (" BIS-OH "), indigo dye compound and fullerene ) Compound, C60. Circle 15 蒴 shows the photon excitation spectrum of the dopant compound in solution, bisphenyl &Quot; BIS-OH "(in CH2CI2), indigo dye compound (in DMSO), and C60 (in methylbenzyl) of square acid dysprosium dye. 躏 16 _shows electrical excitation of TPD-Alq3 / C6 () device The light spectrum is a function of increasing the C60 concentration in the main material of Alq3. Circle 17 shows the TPD-Alq3 / (bisphenol square acid drill "material of chemical formula XI") equipped with a lack of electroluminescence. The light emission spectrum becomes the bisphenol square in the Alq3 main material A function of the dopant concentration of the honeycomb medium. 'Circle I.8 # shows the electric excitation spectrum of the TPD-A 丨 x3 / (Bisphenol square acid dysprosium dye of the chemical formula XI) device into the bismuth in the ΑΓχ3 main material Function of square acid laser doping concentration. ≪ Figure 19 shows TPD-Alx.3 / Ind-12 with 1.7% indigo dye and compound concentration. The paper size is applicable to Chinese National Standard (CNS) A4 specification (2丨 0X297 rye) (Please read back the note of Qin before || fill this page) Γ Pack. Order A7 ____B7 V. Description of invention (10) Printed blue &dye; The compound is charged with the electrical excitation light spectrum. Circle 20 shows a representative compilation based on chemical formula XIII.-Circle 21 shows the line of bright ambient light The conventional display device under the conditions of the display. S 22 shows the root of the high-contrast TOLED display of the present invention under bright ambient light conditions. Circle 23 is a cross-sectional circle of the first specific example of the high-contrast TOLED display according to the present invention. The circle / 24 is the cross section B of the second specific example of the high-contrast TOLED display according to the present invention. The circle 25 is a cross-sectional circle of the first stacked example light emitting device according to the present invention. " The circle 26 is a cross-section circle of a stack light emitting device according to a second embodiment of the present invention. The circle 27 is a cross-section circle of a stack of light emitting devices according to the first main embodiment of the present invention. Circle 28 is an inverted stacked light emitting device according to a specific example of the present invention. Cross Section ® »Circle 29 shows an LED with a split Bragg reflector structure. Detailed description of specific examples of school calibration The present invention will now describe in detail specific specific examples of the invention. It should be understood that these specific examples are merely illustrative examples, and the present invention is not limited thereto. The OLEDs of the present invention include a heterogeneous structure for generating electricity, which can be manufactured into a single heterogeneous structure and a double heterogeneous structure. For preparing -13- This paper size is applicable to Laijia CNS) A4 specification (2 丨 GX297 mm.-(Please read the note of the back nail *-Matters before filling this page) 'Binding A7 B7 V. Description of the invention (11) The materials, methods and devices of Yuyi or double heterogeneous organic thin film, for example, published in US Patent No. 5,554,220, the entire contents of which are incorporated herein by reference. The terms used herein are The heterogeneous structure guaranteeing the generation of electro-excitation light refers to the heterogeneous structure of a single heterogeneous structure including a hole injection layer, a hole transport layer, an electron transport layer, and a cathode layer in order. One or more of these There may be one or more additional layers between successive pairs of equal layers. For example, for a double heterogeneous structure, a separate emission layer is included between the hole rotation layer and the electron transport layer. The anode or depolarization layer Either can be contacted with the substrate, and each electrode can be transported through the device, so that it can generate electrical contacts that generate electrical excitation light from the electron order transport layer, hole transport layer or individual emission layer. The cathode layer is deposited on the substrate. The device is said to have an inverted 0LED (ILED) structure. The inverted structure can also be called " OILED " structure " such as the heterogeneous structure used to generate electrical excitation light includes part of a stacked OLED (SOLED) Then, one or both of the electrodes of the individual heterogeneous structure can be contacted with each other. Or, according to the electrical circuit used to drive the SOLED, an insulating layer can be provided between the electrodes of the OLEDs in the stack. 》 Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs; -1 Pack --- -C (Please read. Read the notes on the back before filling this page) The single or double heterogeneous structure mentioned here is only As an illustration of how an OLED that can specifically implement the present invention can be manufactured, it does not mean that the present invention is limited by the specific materials or order in which the layers shown are manufactured. Soft, and / or plastic, metal or glass substrate; the first electrode, which is typically a high work function hole injection anode layer, such as an indium tin salt (ITO) anode layer; hole transport layer; electronics Transport layer ; And the second electrode layer, such as • 14- This paper size is applicable to Chinese National Standard (CNS) A4 (21 〇χ 297 mm) A7 B7 V. Description of the invention (η)
- -I ’緩-銀合金(Mg:Ag)或鋰-銘合金(Li:Al)之低工作函數的 電子注入金屬陰極層。在本發明之較佳具體實例中,此等 層之次序可逆轉或反轉,'以致陰極層舆基材直接接觸。 可在本發明之代表性具體實例中使用作爲基材之較佳材 科尤其包括玻璃、透明聚合物諸如聚酯、蓝寶石或石英、 或可使用作爲OLED之基材之實質上的任何其他材料。 可在本發明之代表性具體實例中使用作爲電洞注入陽極 層之較佳材料尤其包括ITO、Zn-In-Sn〇2或Sb〇2、或可使 用作爲OLED之電洞注入陽極層之實質上的任何其他材料。 可在本發明之代表性具體實例中使用於電洞輸送層之較 佳材科尤其包括Ν,Ν,-二苯基-N,N,·雙(3-曱基苯基)1-1”鞲 苯,4,4’二胺(TPD)、4,4,-雙[N-(l-茶基)-N-苯基-胺基]聯 笨(or-NPD)或4,4’·雙[N-(2-蕃基)-N-苯基-胺基]聯苯(点· NPD)。 可使用作爲電子輸送層之較佳材料尤其包括參·(8•羥基 令啉)鋁(Alq3)及咔崚。 若存在個別發射層的話,可使用作個別發射層之較佳材 料尤其包括摻雜染科的Alq3、或可使用作爲OLED之個別 發射層之實質上的任何其他材料。 若存在絕緣層的話,其可包括絕緣材料諸如si〇2、SiNx 或ai2o3、或可使用作爲OLED之絕緣材料之實質上的任何 其他材料,其可由各種方法沉積,諸如電漿增進化學蒸氣 咢積(PECVD)、電子束等等。 ' 本發明之OLEDs亦可包括諸如發表於S.A. •15- 本紙張尺度適用中國國家標準(CNS ) Α4^ΤΤ^:κ297公釐 ---L----__^r裝丨一 - -C (請先閲讀背*'之注*-事項再填寫本頁) 訂 LI. 經濟部中央標準局負工消费合作社印繁 五、發明説明(13 ) Α7 Β7 經濟部中央榡準局貝工消費合作社印製 人’應用物理函件’70,UMd"7)及Tang等人,應用 物理期刊(J· Appl. Phys.)64,3610(1989)中之摻雜層, 將其併入本文爲參考資料·、 本發明之OLEDs具有其可完全自眞空沉積分子有機材料 ’不同於’例如,其中某些層包括聚合材料之 OLED。聚合材料典型上需要溶劑基的方法,諸如旋轉塗 布。眞空沉積法,而非聚合材科之溶劑基沉積,特別適用 於製造本發明之OLED,由於此種方法可使所有眞空沉積 步驟整合成製造OLED之單一的整-雄步驟順序❶因此,此 種方法不需使用溶劑或需自眞空室移除空氣敏感層,以致 各層將暴露至環境條件。眞空沉積材料爲可於具有低於 1大氣壓’以約10·5至約10·11托爾較佳之背景壓力之眞空 中沉積之材料。 雖然並不限於此處所引之厚度範面,但如基材係存在爲 軟質塑膠或金屬箔基材,諸如鋁箔,其可薄至1〇微米 (# m),或如基材係存在爲硬質、透明或不透明基材或如 基材包括矽基顯示驅動器,則其可實質上較厚;ITO陽極 層可自約500埃(1埃=10·8公分)至大於約4000埃厚;電洞 輸送層自約50埃至大於約1000埃厚;雙重不均質結構之個 別的發射層,若存在的話,.自約50埃至約200埃厚;電子 輸送層自約50埃至約1000埃厚;及金屬陰極層自約50埃 至大於約1〇〇埃厚,或如陰極層包括保護性銀層且爲不透 明,則其實質上較厚。 ^ 因此,根據裝蕈是否包括單一不均質結構或雙重不均質 -16- 本紙張尺度適用中國囷家樣準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注t事項再填寫本頁) .裝 訂 .II - m 1- » 五、發明説明(Η) A7 B7 結構,裝置是否爲SOLED或單一 OLED,裝置是否爲 TOLED或IOLED,〇L£D是否打算於較佳光譜區域產生 發射,或是否使用再其他的設計變形,而在存在層的類型 、數目、厚度及次序上有實質的變化。 然而,本發明尤其係關於在電祠輸送層與陽極層之間存 在保護層之實質上任何類型的OLED結構。更明確言之, 本發明係關於包括作爲保護性加蓋層(PCL),以降低在 OLEDs之製造過程中對下方有機層造成之ITO喷鍍損壞之 保護層的OLED。本發明更關於具-有對包含此一保護層之 OLED所觀察到之增進電洞注入效率性質的OLED。增進 電洞注入效率之特徵爲在一定的順向偏壓下具有較高的注 入電流,及/或在裝置失效之前有較高的最大電流。因此, ”電洞注入増進層”係其特徵爲其較缺乏此一附加層之類似 裝置笙生至少高約10%,典型上高約50-100%或者再更高 之電流之層。據信此種層以造成增進電洞注入之方式提供 相鄒層之能陏的改良配合。 亦可作爲電洞注入增進層之保護層,例如,可經由沉積 以下化合物而形成*·酞花青化合物或3,4,9,10-苣四羧二酸 酐(PTCDA): ------·—一:Γ 裝—— - -C (#先閲讀背¾之注t事項再填寫本頁)--I 'Metal-cathode layer with low work function electron injection of slow-silver alloy (Mg: Ag) or lithium-ming alloy (Li: Al). In a preferred embodiment of the present invention, the order of these layers can be reversed or reversed, so that the cathode layer directly contacts the substrate. Preferred materials that can be used as substrates in representative embodiments of the invention include, inter alia, glass, transparent polymers such as polyester, sapphire, or quartz, or virtually any other material that can be used as a substrate for OLEDs. Preferred materials that can be used as a hole injection anode layer in a representative specific example of the present invention include, in particular, ITO, Zn-In-Sn02 or Sb02, or the essence of a hole injection anode layer that can be used as an OLED Any other materials on it. Preferred materials families that can be used in the hole transport layer in the representative specific examples of the present invention include, in particular, N, N, -diphenyl-N, N, · bis (3-fluorenylphenyl) 1-1 " Toluene, 4,4'diamine (TPD), 4,4, -bis [N- (l-theyl) -N-phenyl-amino] bibenzyl (or-NPD) or 4,4 '· Bis [N- (2-fanyl) -N-phenyl-amino] biphenyl (dot · NPD). Preferred materials that can be used as the electron transporting layer include, in particular, ginseng (8 • hydroxylingoline) aluminum ( Alq3) and carbene. If there is an individual emission layer, the preferred materials that can be used as the individual emission layer include, in particular, Alq3 doped with dyes, or virtually any other material that can be used as the individual emission layer of the OLED. Where an insulating layer is present, it may include an insulating material such as SiO2, SiNx or ai2o3, or virtually any other material that may be used as an insulating material for OLEDs, which may be deposited by various methods, such as plasma to promote chemical vapor deposition ( PECVD), electron beam, etc. 'The OLEDs of the present invention may also include, for example, published in SA • 15- This paper size applies the Chinese National Standard (CNS) Α4 ^ ΤΤ ^: κ297 mm --- L ----__ ^ r equipment I- -C (Please read the * 'Note *-Matters before filling out this page) Order LI. The Central Standards Bureau of the Ministry of Economic Affairs and the Consumer Cooperatives printed and printed 5. The Invention Description (13) Α7 Β7 The Central Bureau of Standards of the Ministry of Economic Affairs Producer of Applied Labor Cooperatives, 'Applied Physics Letters' 70, UMd " 7) and Tang et al., Doped layers in Journal of Applied Physics (J. Appl. Phys.) 64, 3610 (1989) and incorporated them This article is for reference. The OLEDs of the present invention have 'different' organic materials that can completely self-deposit molecular molecules, for example, OLEDs in which some layers include polymeric materials. Polymeric materials typically require solvent-based methods, such as spin coating. The hollow deposition method, rather than the solvent-based deposition of polymeric materials, is particularly suitable for manufacturing the OLED of the present invention. Since this method can integrate all the hollow deposition steps into a single monolithic step sequence for manufacturing OLEDs, therefore, this type of The method does not require the use of solvents or the removal of air-sensitive layers from the hollow chamber, so that each layer will be exposed to environmental conditions. The hollow deposition material is preferably at about 10.5 to about 10 · 11 Tor below 1 atm. Back Material deposited in the air by pressure. Although not limited to the thickness range cited here, if the substrate is a soft plastic or metal foil substrate, such as aluminum foil, it can be as thin as 10 microns (# m), Or if the substrate is a rigid, transparent or opaque substrate or if the substrate includes a silicon-based display driver, it may be substantially thicker; the ITO anode layer may be from about 500 angstroms (1 angstrom = 10.8 cm) to Greater than about 4000 Angstroms thick; hole transport layer from about 50 Angstroms to greater than about 1000 Angstroms thick; individual emission layers of a double heterogeneous structure, if present, from about 50 Angstroms to about 200 Angstroms thick; electron transport layer from About 50 angstroms to about 1000 angstroms thick; and the metal cathode layer is from about 50 angstroms to more than about 100 angstroms thick, or if the cathode layer includes a protective silver layer and is opaque, it is substantially thicker. ^ Therefore, according to whether the package contains a single heterogeneous structure or a double heterogeneity -16- This paper size is applicable to the Chinese family standard (CNS) A4 specification (210X297 mm) (please read the note on the back before filling in this (Page). Binding. II-m 1- »5. Description of the invention (Η) A7 B7 structure, whether the device is SOLED or single OLED, whether the device is TOLED or IOLED, whether 0L £ D intends to generate emission in a better spectral region , Or whether to use other design variations, but there are substantial changes in the type, number, thickness, and order of the layers present. However, the present invention is particularly related to virtually any type of OLED structure having a protective layer between the electrical transport layer and the anode layer. More specifically, the present invention relates to an OLED including a protective layer as a protective capping layer (PCL) to reduce ITO spray damage to the underlying organic layer during the manufacturing process of the OLEDs. The invention further relates to OLEDs with enhanced hole injection efficiency properties observed for OLEDs containing such a protective layer. Improving hole injection efficiency is characterized by a higher injection current under a certain forward bias, and / or a higher maximum current before the device fails. Therefore, the "hole injection layer" is characterized by a layer with a current of at least about 10% higher than that of a similar device lacking this additional layer, typically about 50-100% or higher. Such layers are believed to provide improved coordination of the capabilities of the associated layers in a manner that results in enhanced hole injection. It can also be used as a protective layer for hole injection enhancement layer. For example, it can be formed by depositing the following compounds: * phthalocyanine compound or 3,4,9,10-Cyclotetracarboxylic dianhydride (PTCDA): ----- -· — 一: Γ 装 ——--C (#Read the notes on the back first, and then fill out this page)
•II 經濟部中央標隼局另工消費合作社印裝• II Printed by the Central Bureau of Standards of the Ministry of Economy
乂 雙(1,2,5-嘍二嗖)·對醗雙(ι,3-二硫崚)(BTQBT),或其他 速當的硬質有機材料,諸如由以下化合物所示: -17- 本纸張尺度適用中國國家榡準(CNS ) A4規格(210X297公釐) A7 B7 五、發明説明(15 )乂 Double (1,2,5- 喽 Di 嗖) · Double 醗 (ι, 3-Dithiopyrene) (BTQBT), or other fast organic materials, such as the following compounds: -17- 本Paper size applies to China National Standards (CNS) A4 specifications (210X297 mm) A7 B7 5. Invention description (15)
1,4,5,8-荅四羧二酸酐(1^1^0八):1,4,5,8-fluorene tetracarboxylic dianhydride (1 ^ 1 ^ 0 eight):
其中R=H、炕基或芳基; (請先閱讀背面之注意事項再填寫本頁)Where R = H, fluorenyl or aryl; (Please read the precautions on the back before filling this page)
C 裝C Pack
訂 其中11=11、(1,4,5,8-蓁四羰二亞胺);Order 11 = 111 (1,4,5,8-fluorenetetracarbonyldiimide);
其中尺=0113、(]^,:^-二甲基-1,4,5,8-荅四幾二亞胺); <J. 經濟部中央標準局貝工消费合作社印製Where ruler = 0113, (] ^ ,: ^ -dimethyl-1,4,5,8-tetrakischimine); < J. Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs
其中R=H、烷基或芳基; ^N-R > > -18 - 本紙張尺度適用中國國家標準(CNS ) Λ4規格(210X297公釐) A7 B7 五、發明説明(l6 ) 其中R=H、(3,4,9,10-苣四羧二酿亞胺);Where R = H, alkyl or aryl; ^ NR > > -18-This paper size applies Chinese National Standard (CNS) Λ4 specification (210X297 mm) A7 B7 V. Description of the invention (l6) where R = H , (3,4,9,10-Cyclotamidine)
其中R=CH3、(N,N,-二甲基-3,4,9,10-苣四羧二醯亞胺); PWhere R = CH3, (N, N, -dimethyl-3,4,9,10-endotetracarboximidine)
具有CA索引名稱,雙苯井咪唑[2,l-a:l’,2’-b·]蒽[2,1,9-clef.6,5, ΙΟ-dVr]二異喹啉-10,21-二酮;With the CA index name, bisbenzimidazole [2, la: l ', 2'-b ·] anthracene [2,1,9-clef.6,5, ΙΟ-dVr] bisisoquinoline-10,21- Diketone
請 先 閱 讀 t. ίι %- 事 項 再 填 % 本 頁Please read t. Ί%-Things before filling in this page
經濟部中央標準局員工消费合作社印繁Consumers' Cooperatives, Central Standards Bureau, Ministry of Economic Affairs, India
具有CA索引名稱,雙寨[2·,3·:4,5]咪唑[2,l-a:2’,l'-a’]蒽 [2,1,9-和&6,5,10-4’61,]二異喹啉-10,21-二酮; Ο 0 ^ N- 具有CA索引名稱,雙苯井咪唑[2,l-a:l',2',l-i]苯幷 [lmn][3,8]啡啉-8,1-二酮; .N Λ~Λ .〇 -Ν >=< Ν- 〇 Ν 19 本紙張尺度適用中國國家標準(CNS ) Μ規格(210X297公釐) A7 __________^__B7 五、發明説明(l7 ) 經濟部中央標準局貝工消費合作社印製 具有CA索引名稱,笨幷[lmn】雙荅[2,,3,:4,5]咪唑[2,1- 亦可使用此等苣、篇:、異峻,林、社花音、或*#淋基化合 物、或化合物族之任何—者的取代衍生物,同時仍保持於 本發明之範圍及精神内。 在其中一個較佳具想實例中,陰極係在反轉OLED所沉 積之基材上沉積爲底層。此一反轉OLED具有其可完全自 眞空沉積分子有機材料製成之優點,不同於,例如,其不 某些層包括無法容易地利用眞空沉積技術沉積之聚合材料 之OLED。雖然在含聚合物的反轉〇led中典型上不需要 保護層,由於聚合物材科之玻璃轉變溫度(Tg)典型上甚高 於分子(非聚合)有機材料之Tg,因此更可抵抗由IT〇噴鍍 所引起之損壞,但此種含聚合物的反轉OLED無法利用可 容易用於製備OLED之眞空沉積技街容易地製造。保護性 加蓋層典型上包括保護下方的電洞傳導材料,使免受在 ΙΤΟ陽極之喷鍍沉積過程中所遭受之損壞的結晶性有機層。 因此’本發明係關於具有可完全自眞空沉積材料製得之 有機層的OLED。此外,本〇leD包括含有結晶性有機層 之眞空沉積分子有璣材科,此結晶性有機層不僅可用於保 護下方的電洞輸送材料,使免受在ΙΤ〇陽極之喷鍍沉積過 程中所遣受之損壞,並且此一有機層亦可作爲電洞注入 進層。 示於圈2之具有PTCDA及CuPc PCLs之& 〇5平方毫米 IOLEDs之順向偏壓電流·電壓(I-V)特性顯示此等特性類似 -20- 本紙張尺度適用中國國家標率(CNS ) Α4規格(2丨0Χ 297公楚) (諳先閱讀背*'之注卷事項再填寫本頁) ΐτ 五、發明説明(18 ) A7 B7 經濟部中央標準局貝工消费合作社印装 於觀察到陷阱有限傳導之先前發表的習知IOLEDs,Z. Shen等人,曰本應用物理期刊(Jpn· J. Appl· Phys.)3 5 ’ M01 (1996),P.E. Burrows,應用物理期刊,79,7991 (1996),(Iar V(m+1>)。對於IOLEDs,m=8,而輿特定装 置結構或PCL厚度之細節無關。對於所有裝置,在10毫安 培/平方公分之電流密度下的EL亮度係在40及100燭光/平 方米之間,而與HTL、PCL或陽極結構之細節無關。特性 呈現於圈2之IOLED係具有不同厚度之PTCDA或CuPc之 装置的代表性樣品。使用CuPc作-爲PCL之IOLED的搮作 電壓在40埃及170埃之間與CuPc之厚度無關。相對地,受 PTCDA保護之IOLEDs的操作電壓當PTCDA之厚度自40 埃増加至60埃時,其突然降低1.5伏特。PCL兩端之電磬 降落相較於在其餘裝置兩端之壓降典型上爲小,由於 PTCDA及CuPc更薄且更具傳導性。因此,I-V特性之突然 變化反映來自ITO觸點之電洞注入效率的變化。 雖然並不打算受含PCL之OLEDs之電洞注入效率如何增 進的精確理論限制,但據信此增進部分係由於眞空沉積電 洞輸送層在ITO層之沉積過程中的降低損壞,及部份係由 於自ITO至電洞注入增進層之電洞注入的降低障壁所致。 IX Q」東競择積典型上會對最頂部的有機層造成薄膜損壞。 相較於具有PTCDA或CuPc PCL之裝置的100%產量,此 禎壞造成由15個不具有PCL之裝置僅有30%的產量。具有 <40埃厚度之PTCDA層之IOLEDs之操作電(壓的突然增加 係當受損區域之厚度輿PCL厚度相當時發生。在此情沉, -21- (錆先閱讀背面之注意事項鼻填寫本寅) Γ 裝. 訂 本紙張尺度通财DU家樣準(CNS ) M規格(2!()><297公 A7 ______B7五、發明説明(l9 ) 經濟部中央標隼局貝工消费合作社印繁 進一步沉積ITO將使變成直接暴露至噴趁電漿之TPD降解。 PCL之存在亦會影響裝置溃決前的最大聲動電流da), 其中不具有PCL之IOLED的Imax僅爲具有PTCDA或CuPc PCL之IOLED所得的10。/〇。Imax之差異可於圖2及3明顢看 出,其中所有的IOLED係在連磧轅高電流下驅動直至發生 裝置溃決爲止。 因此,PCL在此展示保護下方的有機材料,降低I〇LED 操作電壓,及增加製備得之含PCL之IOLED的Imax。操作 電展的類似降低先前對具有CuPc塗布ITO陽接之習知的 OLED觀察得’ S.A· VanSlyke等人,應用物理函件,69 ’ 2160(1996)。據信此係由於電洞自ιτο注入至CuPc之 能障相對於在ITO輿HTL間之能障的降低所致。對具有 >100埃厚之PTCDA PCLs之IOLEDs獲致最低的過渡電壓 (即歐姆傳導輿陷阱有限傳導相等的電壓)。此等結果顯示 相較於不包括PCL之IOLED裝置之增進的電洞注入效率。 S3蘋示圖2中之IOLEDs之光強度對電流(L-I)反應。受 保護之IOLEDs的外部EL量子效率爲7; =(0.15 士 0.01)%相 對於未受保護裝置之7 =(0.30 土0.02)。/。。此差異掾信部分 係由於PCL之吸收所致,由於CuPc及PTCDA兩者在530 毫微米之Alq3尖峰發射波長皆展現強烈吸收。例如,當 CuPc PCL厚度自40埃增加至170埃時,7;降低25%。同 樣地,對受PTCDA保護之IOLED,随PTCDA之膜厚自10 埃增加至120埃,77降低25°/。’與PTCDA之、吸收一致。並 不瞭解在有及沒有PCL之IOLED間之7之其餘差異的原因 „ :-1 裝-- 一 - » (請先閱讀背•面之注—事項再填寫本頁) 訂 -22- 本紙張尺度適用中國國家標準(〇奶)六4規格(2丨0\297公釐) B7 五、發明説明(2〇 ) ,雖然據信在PTCDA/ITO介面之瑕我會將一部分的發射 光線散射固到PTCDA,在此其可受到進一步的吸收。因此 預期對Alq3發射爲逢明的不同PCL材料,其某些説明於上 ,可稍微增加IOLED效率。具有PCLs之IOLED之EL發射 光譜的形狀類似於習知的Alq3基OLED(圖4)。具有60埃厚 之PTCDA PCL之IOLED光譜由於PCL吸收而稍微加寬。 ®5所示之結果顯示具有陰極爲底部觸點,及使用包括有 機電洞注入PCL及透明喷鍍沉積ITO薄膜之新穎陽極的表 面發射,或反轉有機LED(IOLED)相較於缺乏此一PCL之 IOLED可產生增進的電洞注入效率》IOLED可成長於陰極 所將附著之任何平滑基材,包括諸如Si及金屬箔之不透明 基材的頂部。IOLED I-V特性及EL光譜類似於習知的 OLED,雖然操作電壓較高及效率稍微降低,其表示需要 使裝置觸點進一步最適化。 經濟部中央梂準局負工消費合作社印製 本發明之另一態樣係關於另一種降低或防止ITO喷鎪揭 壞之方法。此方法可用於替代或在使用保護層之外採用。 在此方法中’ ITO層一開始係在相當低的IT0沉積速率下 沉積,以避免對下方的有機層造成損壞,然後17〇層在相 當高的速率下沉積,以降低製造OLED所需之時間。尤其 ’在可能發生對OLED表面之實質損壞之ITO沉積程序的 起始暗段中,ITO沉積速率以僅有約2-5埃/分鐘較佳。然 而,當成長中的ITO層達到足以保護下方之一或數個層的 某個臨限厚度後,可將沉積速率增加數倍/以增加至較起 始沉積速率高至少5至1〇倍的沉積速率較佳。雖然改良的 -23- 本紙張尺度適用中國國家CNS ) A4^^x 297公 A7 _B7 五、發明説明(21 ) ITO沉積方法以輿保護屠結合使用較佳,但在某麻情沉下 可不使用保護層而採用改良的ITO沉積方法。 〜 對用於根據主題方法製備ITO層之爲前進能源 (Advanced Energy)ATX-600RF電源(美國科羅拉多州柯 林斯堡(Fort Collins))之RF電源,功率設定値可自低lT〇 沉積速率之约1瓦-7瓦及較高ITO沉積速率之自約2〇瓦_4〇 瓦間變化。因此,當自低ιτο沉積速率走向較高IT〇沉積 速率時,RF電源之功率設定値可自約3倍之增加增加至約 40倍之增加》此增加以可造成ΙΤΘ沉積速率之增加至少自 約5倍增加至約10倍增加較佳。 無論何時當製造IOLED時,下方的一或多個層例如可爲 薄且相當易碎的Mg:Ag陰極層,在Mg:Ag陰極層下方之有 機層,及/或ITO層直接沉積於其上之有機層,諸如電洞輸 送層。如此處所説明者,低ITO沉積速率係對易碎層無法 偵測得實際上可識別之損壞的速率,及高ITO沉積速率可 偵測得對易碎層之可識別損壞的速率。 經濟部中央橾隼局員工消费合作社印繁 在此稱爲••保護性ΙΤΟ層”之足以保護下方的一或多個層 使免受ΙΤΟ沉積過程中之損壞之臨限厚度的ΙΤ〇爲在利用 較高ΙΤΟ沉積速率製備得之OLED的I-V特性中,相較於其 中之ΙΤΟ層係僅利用低的,非損壞性ιτο沉積速率製備得 之OLED,未觀察到實際上可識別之差異者。在特性中 沒有實質上可識別之差異爲在施加於特定〇LED結構兩端 之電壓範因内,得到特定電流所需之電壓係、在對無論何時 ΙΤΟ僅在低的、非損壞性ΙΤΟ沉積速率下沉積之特定 • 24 · 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公楚> A7 _____B7五、發明説明(22 ) 經濟部中央揉準局貝工消费合作社印装 OLED結構所可觀察到之値的为20〇/〇内。 雖然保護下方層所需之成長中之IT〇層的臨限厚度可祝 在下方曾之實際材料而異,但在實質上提高沉積速率之前 ,此臨限厚度以约50至2〇〇埃較佳,及約5〇至1〇〇埃更倖 。雖然可採用而不會造成損壞之最大速率亦可在實質範圃 内變化,其亦視實際塗布材料而定,沉積速率可自約2 5埃 /分鐘増加至至少約50至約60埃每分鐘。將沉積程序程式 化成在整個過程中逐漸及連續增加ΙΤ〇沉積速率,或者僅 在達到某個臨限ΙΤΟ厚度後連續增加ΙΤ〇沉積速率亦係完 全落在本發明之範園及精神内。在此情況,當ΙΤ〇沉積速 率逐漸及逹續增加時,應瞭解足以作爲保護性ΙΤ〇層之臨 限厚度可較ΙΤΟ沉積速率突然增加至實質上較高的ΙΤ〇沉 積速率之情況所需的厚度稍薄。 利用本發明製備得之〇LEDs的性能可藉由比較利用加速 ITO沉積速率製得之〇LED相較於在整個IT〇沉積過程採 用單一ΙΤΟ沉積速率製備得之〇1^1)的1-¥特性而加以評估 。經發現利用本加速沉積速率法製備得之〇LED可製成其 I-V特性舆在整個ITO沉積過程中將沉積速率保持於低沉積 速率之OLED的I-V特性沒有實際上可識別的差異。 在本發明之較佳具體實例,ΙΤ〇層係在經選擇對一定的 ΙΤΟ層厚度可提供透明度及電阻率値之期望組合之氧通量 的存在下利用RF電源喷鍍於標的上》所選擇之實際的氧通 量拫據所使用之特定製造系統的特性而可有、很太的變化, 且可就ΙΤΟ層的可見輻射吸收而評估。尤其,在可見光譜 -25- 本纸伕尺度適财關家5準(CNS ) Μ規格(2丨0><297公餐) ------ -裴· ,1Τ 五、發明説明(23 ) 區域随波長之函數變化之可見輻射的吸收,寿,用加速沉 積速率製得之ιτο層以可產生舆在較低ITO沉積速率下製 備得之ΙΤΟ塗層相當的總透光較佳。 對較高的ΙΤΟ沉積速率,氧通量可在自約〇 35蓋约 〇.5〇sccm("標準立方公分/分鏡")之範固内變化;及對甚低 的ιτο沉積速率,氧通量可自全無至约〇 2sccnj,以約 O-lsccm較佳。使用此等標準於評估利用本主題方法製搆 得之ιτο層的性能,已發現可使用至少10倍之IT〇沉積速 率的增加於製造具有輿僅使用最低|;丁〇沉積速率製備得之 塗層幾乎相同之I-V特性的ΙΤΟ塗層。此一增加典型上係由 使用RF功率設定値之1〇倍增加所產生。 在本發明之另一態樣中,根據本發明製得之〇LED之電 子輸送層可包括有機自由基,其可以遑合於製造〇LEE)之 電子輸送層的方式鲅備得、在本發明之代表性具髗實例中 ,電子輸送材料係以化學式(I)之化學結構CpAr.表示:With the CA index name, Shuangzhai [2 ·, 3 ·: 4,5] imidazole [2, la: 2 ', l'-a'] anthracene [2,1,9- and & 6,5,10- 4'61,] diisoquinoline-10,21-dione; 〇 0 ^ N- has the CA index name, bisbenzimidazole [2, la: l ', 2', li] phenylhydrazone [lmn] [ 3,8] morpholine-8,1-dione; .N Λ ~ Λ .〇-Ν > = < Ν-〇Ν 19 This paper size applies Chinese National Standards (CNS) M specifications (210X297 mm) A7 __________ ^ __ B7 V. Description of the invention (l7) Printed by the Central Laboratories of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, with the CA index name, stupid [lmn] stilbene [2,, 3,: 4,5] imidazole [2,1 -You can also use these chicory, articles :, Yijun, Lin, Shehuayin, or * # lymphoid compounds, or substituted derivatives of any of the compound family, while still remaining within the scope and spirit of the present invention . In one of the preferred conceivable examples, the cathode is deposited as a bottom layer on the substrate deposited by the inverted OLED. This inversion OLED has the advantage that it can be made entirely from hollow-deposited molecular organic materials, unlike, for example, OLEDs in which some layers include polymeric materials that cannot be easily deposited using hollow-deposition techniques. Although a protective layer is typically not required in polymer-containing inversion OLEDs, since the glass transition temperature (Tg) of polymer materials is typically much higher than the Tg of molecular (non-polymeric) organic materials, it is more resistant to Damage caused by IT0 spraying, but such polymer-containing inverted OLEDs cannot be easily manufactured using a hollow deposition technique that can be easily used to prepare OLEDs. Protective capping layers typically include a crystalline organic layer that protects the underlying hole-conducting material from damage suffered during the spray deposition of the ITO anode. Therefore, the present invention relates to an OLED having an organic layer which can be completely made from a hollow deposition material. In addition, this OLED includes a hollow deposition molecule containing a crystalline organic layer. The crystalline organic layer can not only be used to protect the underlying hole transport material from the ITO anode spray deposition process. This organic layer can also be injected into the layer as a hole. The forward bias current and voltage (IV) characteristics of PTCDA and CuPc PCLs shown in circle 2 are shown in the figure below. These characteristics are similar to -20- This paper applies China National Standards (CNS) Α4 Specifications (2 丨 0 × 297g) (谙 Read the notes on the back * 'before filling out this page) 五 τ V. Description of the invention (18) A7 B7 The Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs printed on the observation trap Previously published conventional IOLEDs with limited conduction, Z. Shen et al., Jpn. J. Appl. Phys. 3 5 'M01 (1996), PE Burrows, Journal of Applied Physics, 79, 7991 ( 1996), (Iar V (m + 1 >). For IOLEDs, m = 8, regardless of the details of the specific device structure or PCL thickness. For all devices, EL brightness at a current density of 10 mA / cm² It is between 40 and 100 candelas per square meter, and has nothing to do with the details of the HTL, PCL or anode structure. The characteristics of the IOLED shown in circle 2 are representative samples of devices with different thicknesses of PTCDA or CuPc. Use CuPc as- The operating voltage for the IOLED of PCL is between 40 Egypt and 170 Angstroms and that of CuPc. It has nothing to do with it. In contrast, when the operating voltage of POLEDA-protected IOLEDs increases from 40 Angstroms to 60 Angstroms, it suddenly decreases by 1.5 volts. The voltage drop across the PCL is compared to the voltage across the remaining devices. The drop is typically small because PTCDA and CuPc are thinner and more conductive. Therefore, sudden changes in IV characteristics reflect changes in hole injection efficiency from ITO contacts. Although not intended to be affected by holes in OLEDs with PCL The precise theoretical limit on how the implantation efficiency can be improved, but it is believed that this enhancement is partly due to the reduced damage of the hollow-deposited hole transporting layer during the deposition of the ITO layer, and partly due to the hole from the ITO to the hole injection enhancement layer The lowered barrier caused by the injection. IX Q "Dongji select product typically causes thin film damage to the topmost organic layer. Compared to 100% production of devices with PTCDA or CuPc PCL, this damage caused by 15 The device with PCL has only 30% of the output. The operating voltage of IOLEDs with a PTCDA layer of <40 Angstroms (a sudden increase in pressure occurs when the thickness of the damaged area is equal to the thickness of the PCL. In this case,- 21- (锖 先Read the notes on the back of the book and fill in this book) Γ Pack. The paper size of the book is standard DU home sample (CNS) M specification (2! () ≫ < 297 male A7 ______B7 V. Description of the invention (l9) Ministry of Economy Further deposits of ITO by the Central Bureau of Standards, Shellfish Consumer Cooperatives, India will degrade TPD that is directly exposed to plasma spray. The presence of PCL also affects the maximum sonic current da) before the device collapses, where the Imax of IOLED without PCL is only 10 obtained from IOLED with PTCDA or CuPc PCL. / 〇. The difference in Imax can be clearly seen in Figures 2 and 3, in which all IOLEDs are driven at the high current level until a device breakdown occurs. Therefore, PCL is here to protect the organic materials underneath, reduce the IOLED operating voltage, and increase the Imax of the IOLED containing PCL. A similar reduction in the operation of the electric exhibition was previously observed on OLEDs with a CuPc-coated ITO anode, as previously observed, 'S.A. VanSlyke et al., Applied Physics Letters, 69' 2160 (1996). It is believed that this is due to a decrease in the energy barrier of the hole injected from Cuτ to CuPc compared to the energy barrier between ITO and HTL. The lowest transition voltage (that is, the voltage equal to the ohmic conduction trap and the finite conduction) is obtained for IOLEDs with> 100 Angstroms of PTCDA PCLs. These results show improved hole injection efficiency compared to IOLED devices that do not include PCL. S3 shows the light intensity of the IOLEDs in Figure 2 as a function of current (L-I). The external EL quantum efficiency of protected IOLEDs is 7; = (0.15 ± 0.01)% compared to 7 of unprotected devices = (0.30 ± 0.02). /. . This difference is believed to be due to the absorption of PCL, as both CuPc and PTCDA exhibit strong absorption at the Alq3 peak emission wavelength of 530 nm. For example, when CuPc PCL thickness increases from 40 to 170 angstroms, 7; 25% reduction. Similarly, for POLEDA-protected IOLEDs, as the PTCDA film thickness increases from 10 angstroms to 120 angstroms, 77 decreases by 25 ° /. 'Is consistent with the absorption of PTCDA. I do n’t know the reason for the remaining 7 differences between IOLED with and without PCL „: -1 Pack-1-» (please read the note on the back and front—the matter before filling out this page) Order-22- This paper The scale applies to the Chinese national standard (0 milk) 6 (2 丨 0 \ 297 mm) B7 V. Description of the invention (20), although it is believed that the flaws in the PTCDA / ITO interface will scatter part of the emitted light. To PTCDA, it can be further absorbed here. Therefore, it is expected that the different PCL materials for Alq3 emission are bright, some of which are explained above, which can slightly increase the IOLED efficiency. The shape of the EL emission spectrum of IOLED with PCLs is similar to Conventional Alq3-based OLED (Figure 4). The IOLED spectrum of PTCDA PCL with a thickness of 60 Angstroms is slightly broadened due to PCL absorption. The results shown in ®5 show that the cathode is the bottom contact, and the use of organic hole injection is included. The surface emission of a novel anode of PCL and transparent spray-deposited ITO film, or inverted organic LED (IOLED) can produce improved hole injection efficiency compared to an IOLED lacking this PCL. "IOLED can grow on the cathode Any smooth substrate including materials such as Si and The top of the opaque substrate of metal foil. IOLED IV characteristics and EL spectrum are similar to conventional OLEDs. Although the operating voltage is higher and the efficiency is slightly reduced, it indicates that the device contacts need to be further optimized. Another aspect of the invention printed by the Industrial and Commercial Cooperative is related to another method for reducing or preventing ITO spraying and exposing. This method can be used instead of or in addition to using a protective layer. In this method, the ITO layer begins It is deposited at a relatively low IT0 deposition rate to avoid damage to the underlying organic layer, and then the 170 layer is deposited at a relatively high rate to reduce the time required to fabricate the OLED. In particular, 'on the OLED surface may occur In the initial dark segment of the substantially damaged ITO deposition process, the ITO deposition rate is preferably only about 2-5 Angstroms / minute. However, when the growing ITO layer reaches a certain level that is sufficient to protect one or more layers below it, After each threshold thickness, the deposition rate can be increased several times / to increase the deposition rate to at least 5 to 10 times higher than the initial deposition rate. Although the improved -23- this paper size is applicable National CNS) A4 ^^ x 297 male A7 _B7 V. Description of the invention (21) The ITO deposition method is better used in combination with public protection but it can be improved without the use of a protective layer in a certain sinking state. For the RF power used to prepare the ITO layer according to the subject method is an Advanced Energy ATX-600RF power supply (Fort Collins, Colorado, USA), the power setting can be set from about 1 watt at a low lT0 deposition rate. -7 watts and higher ITO deposition rates vary from about 20 watts to 40 watts. Therefore, when the deposition rate from a low ιτο towards a higher IT0 deposition rate, the power setting of the RF power source can be increased from an increase of about 3 times to an increase of about 40 times. It is better to increase from about 5 times to about 10 times. Whenever an IOLED is manufactured, the one or more layers below may be, for example, a thin and quite fragile Mg: Ag cathode layer, an organic layer below the Mg: Ag cathode layer, and / or an ITO layer is deposited directly thereon Organic layers, such as hole transport layers. As explained herein, a low ITO deposition rate is a rate at which fragile layers cannot be detected with virtually identifiable damage, and a high ITO deposition rate can be detected at a rate that can detect identifiable damage to the fragile layers. The Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs of India is called “• Protective ITO layer”, which is sufficient to protect one or more layers below from the threshold thickness of ΙΤΟ in the process of ITO deposition. Among the IV characteristics of OLEDs prepared using higher ITO deposition rates, compared to the ITO prepared with only a low, non-destructive ιτο deposition rate, no identifiable differences were observed. There is no substantially identifiable difference in the characteristics of the voltage system required to obtain a specific current within the voltage range applied across the specific OLED structure. At any time, ITO is deposited only at low, non-destructive ΙΤΟ. Specificity of deposition under the rate • 24 · This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 Gongchu > A7 _____B7 V. Description of the invention (22) The Central Ministry of Economic Affairs, Central Bureau of the Ministry of Economic Affairs, Printed OLED Structure Institute The observed thickness is within 20/0. Although the threshold thickness of the growing IT0 layer required to protect the underlying layer may vary depending on the actual materials used below, it is substantially improved. Prior to high deposition rates, this threshold thickness is preferably about 50 to 200 Angstroms, and about 50 to 100 Angstroms. Fortunately, although the maximum rate that can be used without causing damage can also be within the physical range. Depending on the actual coating material, the deposition rate can be increased from about 25 Angstroms / minute to at least about 50 to about 60 Angstroms per minute. The deposition procedure is programmed to gradually and continuously increase the ITO deposition rate throughout the process. Or, the continuous increase of the ITO deposition rate only after reaching a certain threshold ITO thickness is also completely within the scope and spirit of the present invention. In this case, when the ITO deposition rate increases gradually and continuously, it should be understood The threshold thickness sufficient as a protective ITO layer can be slightly thinner than that required when the ITO deposition rate suddenly increases to a substantially higher ITO deposition rate. The performance of the LEDs prepared by the present invention can be determined by Compared with the 1- ¥ characteristics of OLEDs made with accelerated ITO deposition rate compared to 〇1 ^ 1) prepared with a single ITO deposition rate during the entire ITO deposition process, it was found that this accelerated deposition was used The LED prepared by the rate method can be made into an IV characteristic, and the IV characteristic of an OLED that maintains the deposition rate at a low deposition rate throughout the ITO deposition process has no practically identifiable difference. In a preferred specific example of the present invention, The ITO layer is the actual oxygen flux selected by RF power spraying on the target in the presence of an oxygen flux selected to provide a desired combination of transparency and resistivity for a certain ITO layer thickness. The characteristics of the specific manufacturing system used can vary, too, and can be evaluated for the visible radiation absorption of the ITO layer. In particular, in the visible spectrum -25- this paper is suitable for financial institutions 5 standards (CNS) M Specifications (2 丨 0 > < 297 public meals) ------ -Pei ·, 1T V. Description of the invention (23) The absorption and visible absorption of visible radiation in the area as a function of wavelength is obtained by accelerating the deposition rate The ιτο layer is equivalent to the total light transmittance of the ITO coating prepared at a lower ITO deposition rate. For higher ITO deposition rates, the oxygen flux can vary within a range from about 0.35 sccm (" standard cubic centimeter / splitter "); and for very low ιτο deposition rates The oxygen flux can be from nothing to about 02sccnj, preferably about 0-1sccm. Using these criteria to evaluate the performance of the ιτο layer made using the subject method, it has been found that it is possible to use at least a 10-fold increase in ITo deposition rate to produce coatings prepared with only the lowest use; buto deposition rate ITO coating with almost the same IV characteristics. This increase is typically caused by a 10-fold increase using the RF power setting. In another aspect of the present invention, the electron-transporting layer of the LED prepared according to the present invention may include an organic radical, which may be prepared in a manner compatible with the method of manufacturing the electron-transporting layer of the LED. In a representative specific example, the electron transport material is represented by the chemical structure CpAr. Of the chemical formula (I):
^------訂 (I) 經濟部中央樣隼局貝工消费合作社印災 其在此稱爲被多芳基取代的環戊二烯基自由基,其中各Ar-基困,Aq、Ar2、Ar3、Ay4及Ar5,爲氫、燒基或未被取 代或被取代的芳香基團。雎然術語"Ar-基圏”可能典型上係 僅用於指芳基,但在此使用此術語於包括氫或烷基,值管 以至多只有其中一個Ar-基困爲烷基或氩,而其餘的爲芳香 基固較佳,及所有的Ar-基團爲芳香基圏最佳。芳香基團可 26- 本紙張尺度適用中國國家榡準(CNS ) Α4规格(210X297公楚) A7 B7五、發明説明(25 ) 作爲電子輸送層之電子輸送及電子發射性質之整體组合的 穗定有機自由基。 再更明確言之,在較佳具體實例中,有機自由基爲化學 式(II)之五苯基環戌二烯基基根,Cp®·:^ ------ Order (I) The Central Samples Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative Co., Ltd. This is called a cyclopentadienyl radical substituted by a polyaryl group. , Ar2, Ar3, Ay4, and Ar5 are hydrogen, an alkyl group, or an unsubstituted or substituted aromatic group. Although the term "Ar-based" may typically be used only to refer to aryl groups, this term is used here to include hydrogen or alkyl groups. At most only one of the Ar-groups is alkyl or argon. , While the rest are better aromatic groups, and all Ar- groups are the best aromatic groups. Aromatic groups can be 26- This paper size applies to China National Standards (CNS) A4 specifications (210X297) Chu A7 B7 V. Description of the invention (25) The organic free radical, which is a combination of the electron transport and electron emission properties of the electron transport layer, is more specific. In a more specific example, the organic radical is of formula (II) Pentaphenylcyclofluorene dienyl radical, Cp® ·:
其中化學式(I)之各芳基在化學式(π)中係定義成可爲未被 取代,或分別被取代基R!、R2、R3、R4及R5取代之單一 苯基,其中各R-基困獨立於其他R-基團而代表電子供體基 困、電子受體基團或烷基之一或多者。 關於本發明之一特定説明具體實例,有機自由基可爲化 學式(III)所表示之未被取代的Cp4 : (m) „ .-- 1 裝-- (諳先閲讀背-面之注意事項再填寫本頁) 訂 經濟部中央標隼局員工消費合作社印裝Wherein, each aryl group of the chemical formula (I) is defined in the chemical formula (π) as a single phenyl group which may be unsubstituted or substituted by the substituents R !, R2, R3, R4 and R5, respectively, wherein each R- group Independent of other R-groups, it represents one or more of an electron donor group, an electron acceptor group, or an alkyl group. Regarding a specific example of the present invention, the organic radical may be an unsubstituted Cp4 represented by the chemical formula (III): (m) „.-1 Pack-(谙 Read the precautions on the back-side first, then (Fill in this page) Ordered by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs
關於本發明之又另一特定説明具體實例,有機自由基可 爲化學式(IV)之四笨基環戍二烯基自由基,、 -28- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) 五、發明説明(26 ) A7 B7Regarding yet another specific specific example of the present invention, the organic radical may be a tetrabenzylcyclofluoradienyl radical of the chemical formula (IV), -28- This paper size is applicable to the Chinese National Standard (CNS) A4 specification ( 210X 297 mm) 5. Description of the invention (26) A7 B7
經濟部中央標準局貝工消费合作社印製 及其進一步被取代的變形,例如,在化學式(IV)中所示之 氳可被烷基所取代。 雖然並不打算受對如此處所發表之特定有機自由基之代 表性具雄實例之發明理論的限制,-供據信在OLED之ETL 中作爲電子輸送材料之CpAr.自由基的疾用可以性質之组合 爲基礎β其包括存在立體保護的中心環戊二烯基環,其由 於環戊二缔基環之實質上完全的立禮保護而可形成通常爲 穩定的有機自由基;環戊二烯基自由基容易形成陰離子之 能力,此陰離子輿自由基一起作用而作爲電子載體;及環 戍二烯基陰離子之強烈芳香特性,其造成陰離子之7Τ-轨域 輿笨基取代基之龙-軌域的強烈重疊,因此而增進促進材料 作爲電子載體之效用的電子移動率。本發明具有可選擇包 含於有機自由基由之取代基,以根據可產生特別適合使用 作爲電子輸送層之電子輸送及電子發射性質之整雄组合的 方式,改變自由基之發射光譜及還原位能之進一步特色。 本發明曼斗係關於適合使用於OLED之電子輸送層中之 電子輸送材料,其中電子輸送材料包括在穩定的有機自由 多與由自由基形成之陰離子間具有可容易得、到之還原位能 、 __ · 、. .------. 夸#自由基,例如,化學式(ΠΙ)之五苯基環戊二烯 -29- 本紙張尺度適巾gil家轉(CNS ) Α4規格(21()>< 297公瘦) --- (請先閲請背面之注秦事項再填寫本頁) Γ裝. 訂 A7 B7 五、發明説明(24 ) 經濟部中央標準局貝工消费合作社印製 分別選成彼此相同或不同,可由化學式I所涵蓋之化合物的 總數迄今爲止僅限於其可適用於製備電予輸送層,及迄今 爲止在化學上可實際製備得此等化合物者。如電子輸送層 之載體移動率具有至少1〇·6平方公分/伏特秒之値,則在此 將有機自由基化合物定義成適合使用作爲電子輸送材料。 未被取代或被取代的芳香基團可爲,例如,苯基;具有 稠苯環之基图,諸如莕基;或芳香雜環基圈諸如吡咬基或 硫苯基。 各芳香基團可獨立於其他的芳香基團而爲未被取代或被 一或多妇取代基取代》取代基可爲電子供體基團、電子受 體基團或坡基。 對於不僅作爲電子輸送材科,並且作爲發射材料之彼等 化合物,未被取代或被取代的芳香基困係經選擇,以藉由 能產生期望顏色之方式調整光譜發射特性,例如,利用 CIE比色系統之χ_γ色度座標所定出特性。例如,已知含 笨基化合物之發射光譜的實質變化可根據苯基是否爲未被 取代或相反地係在鄰位或對位被電子供體基團或電子受醴 基團所取代而產生β除了經選擇以調整發射特性外,供鳢 及受髏基團亦可經選择,以影響分子間相互作用之程度, 及因此而影響載體移動率。此外,亦可選擇此等取代基以 調整有機自由基之運原位能,即運原自由基所需之能量, 因此而將自由基轉變成自由基之陰離子。藉由迷當地選擇 取代基以產生可容易得到的還原位能,可有、利地改變載髖 移動率及/或載嫌_深度,以致可產生具有特別適合使用 -27 _尺度適用中 (請先閲讀背_面之注泰事項再填寫本頁) Γ 裝 訂 B7 五、發明説明(27 ) 基自由基,Cp*及化學式(V)之椹苯基環戊 二缔基陰離子:Printed by the Central Bureau of Standards, Ministry of Economic Affairs, Shellfish Consumer Cooperative and its further substituted variants, for example, 氲 shown in Chemical Formula (IV) may be replaced by an alkyl group. Although not intended to be limited by the inventive theory of a representative example of a specific organic radical as published herein, the properties of CpAr. Radicals believed to be used as electron transport materials in the ETL of OLEDs The combination is based on β, which includes a central cyclopentadienyl ring with steric protection, which can form a generally stable organic radical due to the substantially complete rilip protection of the cyclopentadienyl ring; cyclopentadienyl The ability of free radicals to easily form anions. This anion acts as an electron carrier together with the free radicals; and the strong aromatic characteristics of the cycloadienyl anion, which results in the 7T-orbital domain of the anion, the dragon-orbital domain The strong overlap of electrons thus promotes the electron mobility that promotes the utility of the material as an electron carrier. The present invention has a substituent which can be selected to be included in an organic radical to change the emission spectrum and reduction potential of a radical in a manner that can produce a perfect combination of electron transport and electron emission properties that are particularly suitable for use as an electron transport layer. Further features. The present invention relates to an electron-transporting material suitable for use in an electron-transporting layer of an OLED. The electron-transporting material includes a stable organic free radical and an anion formed by a free radical. __ ·,. .------. Quark radicals, for example, pentaphenylcyclopentadiene of chemical formula (ΠΙ) -29- This paper is suitable for gil home transfer (CNS) Α4 specifications (21 ( ) > < 297 male thin) --- (Please read the Qin matters on the back before filling this page) Γ. Order A7 B7 V. Description of Invention (24) Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs The total number of compounds selected by the formulae to be the same or different from each other, which have been covered by Chemical Formula I, has so far been limited to those that can be applied to the preparation of the electron transport layer, and that these compounds have actually been chemically prepared to date. If the carrier mobility of the electron-transporting layer has a value of at least 10.6 cm 2 / volt-second, the organic radical compound is defined herein as being suitable for use as an electron-transporting material. An unsubstituted or substituted aromatic group may be, for example, a phenyl group; a radical diagram having a fused benzene ring, such as a fluorenyl group; or an aromatic heterocyclic ring such as a pyridyl group or a thiophenyl group. Each aromatic group may be unsubstituted or substituted by one or more substituents independently of the other aromatic groups. The substituent may be an electron donor group, an electron acceptor group, or a polyl group. For their compounds not only as electron transport materials, but also as emissive materials, unsubstituted or substituted aromatic groups are selected to adjust the spectral emission characteristics in such a way as to produce the desired color, for example, using the CIE ratio The characteristics determined by the χ_γ chromaticity coordinates of the color system. For example, it is known that a substantial change in the emission spectrum of a benzyl-containing compound can be generated depending on whether the phenyl group is unsubstituted or instead is ortho or para-substituted by an electron donor group or an electron acceptor group. In addition to being selected to adjust the emission characteristics, the donor and acceptor groups can also be selected to affect the extent of intermolecular interactions and therefore the carrier mobility. In addition, these substituents can also be selected to adjust the in situ energy of the organic radical, that is, the energy required to transport the original radical, and thus convert the radical to the anion of the radical. By choosing substituents to produce easily available reduction potentials, it is possible to favorably change the hip-bearing mobility and / or load depth, so that it can be produced with a particularly suitable -27 _ First read the note on the back of the page and fill in this page) Γ Binding B7 V. Description of the invention (27) radicals, Cp * and fluorene phenylcyclopentadienyl anion of chemical formula (V):
1 一 (V) 可容易得到的還原位能造成通過電子輸送層之遴當的電 子傳導,其中迷當的電子傳導在此係定義成意指以具有至少 約10-6平方公分/伏特秒之電子移動·率爲基礎之電子傳導。 包括Cp。·自由基之電子輸送層提供在某些情況電子輪送 材料亦可作爲OLED中之發射材料的進一步優點^當電子 輸送材料亦提供作爲發射材料時,〇LED可利用單一不均 質結構製造。如電子輸送材料不亦提供作爲發射材料,則 OLED可自單一不均質結構製造,其中電洞輸送層爲發射 層,或自雙重不均質結構製造。 經濟部中央標準局貝工消费合作社印製 本發明更關於以整雄形式將Cp*自由基製備成具有高電 子移動率及高子載體密度之電子輸送材料之薄層的新穎方 法,其中電子輸送層係包括於多層結構中,尤其係於用於 產生電激發光之不均質結構中。據信沒有先前技藝的電子 輸送材料發表過包含有機自由基。因此,雖然本發明係關 於使用被多芳基取代的環戊二烯基自曱某, ,係被多苯基取代的環戊二晞基自由基基或 ,係五苯基環戍二缔基自由基,作爲代表之 物種’但應瞭解本發明大致係鬨於可包含於電子输送層中 -30- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公 A7 B7五、發明説明(28 ) 作爲電子輸送材科具有至少1〇_<5平方公分/伏特秒之電子移 動率之任何有機自由基。 Cp#•自由基除了爲自由基外,其不同於五苯基環戊二烯 本身,Cp*H :1 The (V) easily available reduction site can cause the proper electron conduction through the electron transport layer, wherein the confused electron conduction is defined herein as meaning to have a voltage of at least about 10-6 cm 2 / volt second. Electron mobility is the basis for electron conduction. Including Cp. · The free radical electron transport layer provides further advantages in some cases where the electronic carousel material can also be used as the emitting material in OLEDs ^ When the electron transport material is also provided as the emitting material, 〇LED can be manufactured with a single heterogeneous structure. If the electron transport material is not also provided as an emission material, the OLED can be manufactured from a single heterogeneous structure, where the hole transport layer is an emission layer, or from a double heterogeneous structure. This invention is more about a novel method for preparing Cp * radicals into a thin layer of an electron transporting material with high electron mobility and high carrier density in the form of orthomorphism, which is printed by the Shelley Consumer Cooperative of the Ministry of Economic Affairs The layer system is included in a multilayer structure, and particularly in a heterogeneous structure for generating electrical excitation light. It is believed that no prior art electron transport materials have been published that contain organic free radicals. Therefore, although the present invention relates to the use of a cyclopentadienyl group substituted with a polyaryl group, it is a cyclopentadienyl radical group substituted with a polyphenyl group, or a pentaphenylcyclofluorenyl diphenyl group. Free radicals, as a representative species', but it should be understood that the present invention is generally coaxed to be included in the electron transport layer. -30- This paper size applies to China National Standard (CNS) A4 specifications (210X 297 male A7 B7. 28) Any organic radical that has an electron mobility of at least 10_ <5 square centimeters per volt as the electron transport material family. Cp # • radicals are different from pentaphenylcyclopentane except that they are free radicals Ene itself, Cp * H:
-- - -C- (請先閱讀背面之注ife-事項再填寫本頁) 經濟部中央標隼局貝工消费合作社印裝 之處在於發表當使用於OLEDs中時,其爲藍色發 射材料,C. Adachi等人,應用物理函件,第56卷,799-801 (1990),而五苯基環戊二烯基自由基之薄膜經觀察及 發表具有紫色,M.J. Heeg等人,有機金屬化學期刊(J. Organometallic Chem.),第346卷,321-332(1988) 〇 此外,<:ρΦ•自由基不同於0:ι>ΦΗ||_在於後者不易遘原。 Cp#H之運原將必須接著Η+之損失,以得到穩定的陰離子 形式,其在能量上並不可行。尤其,雖然根據此等差異, 完全沒有理由預期〇ρΦΗ將具有良好的載髏輸送性質,但 Cp*.自由基尤其可適合於此用竣。 本發明之另一特色係基衿雖然典型上很難經由習知 法製備及貯存Cp*.,但本發明之Cp*.自由基材料<於具1 中自空氣穩定的前身錯合物容易地製備得之事實。f 環戊二烯之金屬雙環戊二晞錯合物,諸如(〇ρΦ)2Μ ’ f方 M=Fe、Ru、Sn、Ge或Pb ’可如發表於Heeg等人中 -31- 本紙張尺度適用中國國家樣準(CNS ) A4規格(210X297公釐) 訂 A7 ________B7五、發明説明(29 ) 式製備得。此等材料可如由以下方程式: MX2+2 Cp*Li->(Cp*)2M+2LiX » (1) 所説明之自金屬盪及Cp*陰離子,[CpY,---C- (Please read the note on the back of the ife-item before filling out this page) The Central Printing Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives, printed it when published in OLEDs, it is a blue emitting material , C. Adachi et al., Applied Physics Letters, Volume 56, 799-801 (1990), and films of pentaphenylcyclopentadienyl radicals have been observed and published with a purple color, MJ Heeg et al., Organometallic Chemistry Journal (J. Organometallic Chem.), Vol. 346, 321-332 (1988) ○ In addition, <: ρΦ • radicals are different from 0: ι > ΦΗ || The origin of Cp # H will have to be followed by the loss of Η + to obtain a stable anion form, which is not feasible in energy. In particular, although based on these differences, there is absolutely no reason to expect that 0ρΦΗ will have good cross-body transport properties, Cp *. Radicals are particularly suitable for this use. Another characteristic of the present invention is that although it is typically difficult to prepare and store Cp *. Through conventional methods, the Cp *. Radical material of the present invention is easy to mix with precursors that are stable in air. Ground truth. f Cyclopentadiene metal dicyclopentadiene complex, such as (〇ρΦ) 2M 'f square M = Fe, Ru, Sn, Ge or Pb' can be published in Heeg et al. -31- Applicable to China National Standard (CNS) A4 specification (210X297 mm) Order A7 ________ B7 V. Invention description (29) These materials can be represented by the following equation: MX2 + 2 Cp * Li- > (Cp *) 2M + 2LiX »(1) Self-Metal and Cp * Anions, [CpY,
(請先閲讀—面之注意事項再填寫本頁) 装. 經濟部中央橾隼扃貝工消費合作社印策 製備得,其中M=Fe、Ru、Sn、G*e或Pb ;及X=鹵化物或 磨酸根。各此等錯合物爲空氣穩定的錯合物。然而,Ge及 Pb錯合物非爲熱德定。據報告Ge及Pb錯合物在250°C及約 1〇_4托爾下之嘗試昇華將造成形成金屬鏡及氣態〇ρΦ•自由 基物種之昇華,如以下方程式所示: (Cp*)2M — Μ·(固體)+2 Cp* (氣相)(2) 250°C,10_4托爾 根據Heeg等人,自氣相有機自由自由基Cp*·沉積之紫色 薄膜僅包括Cp*·自由基材料》 本發明係闞於使用此種前身材料及此種方法於製備可用 於包括電子輸送層之實質上任何類型之多層結構中之電子 輸送層。尤其,含自由基之電子輸送層,例如可包括於光 發射裝置之多層結構中,即在用於產生電激發光之不均質 結構中。因此,本發明係關於將關於本主题的電子輸送層 併入於多層結構中,其中電子輸送層係輿電洞輸送層有電 接觸。 ,ιτ d -32- 本紙尺度適财011家轉(CNS) A4規格(21Qx 297公楚) A7 __B7五、發明説明(3〇) 經濟部中央標準局貝工消費合作社印製 當將此種含自由基之材料併入於多層結中作爲電子輸送 層時,含穩定有機自由基之材料係意圈提·供特別適合使用 作爲電子輸送材料之利益及優點。雖然在本發明之更佳具 雄實例中,電子輸送層係意圏主要包括有機自由基’或甚 至在某些情沉下係關於實質上由有機自由基所组成之電子 輪送層,但亦考慮含已經歷二聚作用,甚至是實質上之二 聚作用之自由基材料之層,亦可提供作爲有效的電子輸送 材料,因此,其亦視爲薄在本發明之範固内。 實質上,雖然電子輸送層若非务全包括有機自由基材料 的話,其主要係包含有機自由基材料,但本發明可涵蓋包 含可經證實有機自由基之存在有助於電予輸送層之電子輸 送特性之有機自由基材料的任何電子輸送層。例如,此層 可包括埋藏於非自由基,但仍爲電子輸送材料之母體中的 有機自由基材料。在此將主要包含有機自由基之電子輸送 層定義爲有機自由基爲電子輸送層之主要成份的層》 在本發明之較佳具體實例中,使用五苯基環戊二烯基之 Ge(十笨基雙環戊二烯鍺)或?1)(十苯基雙環戌二烯鉛)錯合 物作爲在眞空沉積系統中製備C〆.之薄層的來源。 本發明更關於可將摻雜劑化合物包含於發射層中之 OLEDs °將可移動僅包含主化合物之發射層之發射波長的 捧雜劑’以可有故移動發射波長之量加至主化合物中,以 致LED裝置以發出可被人眼察覺爲接近其中—個主要顏色 的光線較佳》雖然一般認爲描述顏色感知之特性係—項主 觀的行爲’但國除照明考察團(International Commission (請先閲讀背-面之注*-事項再填寫本頁) .裝------訂----! -33- 本紙張纽·巾關^ A 7 B7 __— --- 五、發明説明(3!) of mum—)已發展出定量的色度尺度,或者稱爲⑽ 揉準。根據此標舉,飽和顏色可以具有根據色度尺度之定 義軸之比定量座揲的單點表示。熟悉技藝人士當明睹在 CIE尺度上之此一單點將係化表在實際上很難,但幸而無 需達到的標準或目樣^ 在本發明之較隹具體實例中,〇LED產生主要顏色,摻 雜劑係加入主化合物中’以致OLED發出被人眼察覺爲接 近抱和主要顏色之光。經由實行本發明’意圖將0LED構 造成可以接近於如將由CIE尺度听定義之絕對(或飽和)色 度値的發射描述特性°此外’亦指望利用本發明之材料的 LED可有能超過頻光/平方米之顧示亮度’球然在某些 情沉中,稍低的値,或許低至10濁光/平方米亦可接受° 經濟部中央橾隼局貝工消费合作社印製 此處所定義之化合物爲可摻雜摻莽劑’以發出具有期望 光譜特性之光之化合物。術語M主”係用於指作爲接受電洞/ 電子再結合能量,然後經由發射/吸收能量轉移程序,將此 激發能轉移至摻雜劑化合物之在發射層中的化合物,其典 型上係存在甚低的濃度。摻雜劑接著可鬆弛至具有稍低能 It之漱態,其將其所有能量在期望譜區域中侵先發射成發 光發射。將發射出100%摻雜劑之激態激發能的摻雜刺描 述成具有100%的量子效率.。對於要使用在可調整顏色之 SOLED中的主化合物/摻雜劑濃度,若非所有主化合物之 漱發能皆轉移至摻雄剤的話,其以有大部分轉移至摻雜劑 較佳,其依次或許自較低能階放射,但具有、高量子效率, 而產生具有期望色度之可見輻射。 -34- 本紙張尺度適财ss家料(CNS) A4規格(21GX297公楚) Μ _____Β7五、發明説明(32) 經濟部中央標準局貝工消费合作社印繁 關於此處所使用之術語主化合物,當明瞭此等化合物可 於單一不均質結構OLED裝置之電子輸送/發射層,或雙重 不均質結構装置之個別發射層中尋得。如熟悉技藝人士所 當知曉,使用諸如此處所發表之摻雜劑物種,使其不僅可 擴大由OLED所發射之顏色的範圏,並且可擴大主及/或捧 雜渐化合物之可能選擇物種的範固。因此,對於有效的主 化合物/摻雜劑系統,雖然主化合物可在摻雜劑物種強烈吸 收光之光譜區域中具有強的發射,但主物以在摻雜劑亦強 烈發射之區域中不具有發射帶较佳。在主化合物亦作爲電 啊載嫌之結構中’則額外的標準,諸如物種的氧化運原位 能亦成爲一項考量因素。然而,一般而言,主及摻雜劑物 種之光譜特性爲最重要的標準。 摻雜劑之存在量係足以將主材科之發射波長移動成儘可 能接近於如將由根據CIE尺度所定義之飽和主顏色的量。 典型上,以發射層計,有效量係自約0.01至1〇.〇莫耳百分 比。較佳的量係自約0.1至1.0莫耳百分比。決定適當摻雜 程度之主要標準係可有效獲致具有適當光譜特性之發射的 程度。舉例來説,而並無限制,如摻雜劑物種之量値太低 ,則來自裝置之發射將亦包括來自主化合物本身之光成份 ,其將係在較來自摻雜劑物種之期望發射短的波長下。相 反地,如摻雜劑之量値太高,則發射效率可能受自淬滅-一 種淨的非發射機構-的不利影響。或者,太高量值的摻雜劑 物種亦會不利地影響主材料之電洞或電子輸缒性質。 本發明之另一個具體實例尤其係關於包含(5-羥基)喹喏 -35- 本紙張尺度適用中國國家標準(CNS ) Α4規格(210^<297*^^~y (請先閲讀背面之注意事項再填寫本頁) •裝·(Please read the above-mentioned precautions before filling out this page.) Packing. Prepared by the printing policy of the Central Coopers Consumer Cooperative of the Ministry of Economic Affairs, where M = Fe, Ru, Sn, G * e, or Pb; and X = halogenated Or ground acid. Each of these complexes is an air-stable complex. However, Ge and Pb complexes are not Redetin. It is reported that the attempted sublimation of Ge and Pb complexes at 250 ° C and about 10_4 Torr will cause the formation of metal mirrors and gaseous sublimation of 0ρΦ • radical species, as shown in the following equation: (Cp *) 2M — Μ · (solid) +2 Cp * (gas phase) (2) 250 ° C, 10_4 Torr According to Heeg et al., Organic free radicals Cp * from the gas phase deposited purple films only include Cp * · free Base Materials "The present invention is directed to the use of such precursor materials and such methods in the preparation of electron transport layers that can be used in virtually any type of multilayer structure including electron transport layers. In particular, the electron-transporting layer containing a radical may be included, for example, in a multilayer structure of a light-emitting device, that is, in a heterogeneous structure for generating electrical excitation light. Accordingly, the present invention relates to incorporating an electron transport layer on the subject into a multilayer structure, wherein the electron transport layer is an electrical hole transport layer having electrical contact. , ιτ d -32- This paper is suitable for 011 transfers (CNS) A4 specifications (21Qx 297 Gongchu) A7 __B7 V. Description of the invention (30) Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs When free radical materials are incorporated in multilayer junctions as electron transporting layers, materials containing stable organic free radicals are intended to provide benefits and advantages that are particularly suitable for use as electron transporting materials. Although in the more preferred embodiment of the present invention, the electron transport layer is intended to include mainly organic radicals, or even in some cases, an electron rotation layer consisting essentially of organic radicals, but also Considering that a layer containing a radical material that has undergone dimerization, or even substantial dimerization, can also be provided as an effective electron transport material, it is therefore considered to be thin within the scope of the present invention. In essence, although the electron transport layer, if it does not include organic radical materials, it mainly contains organic radical materials, but the present invention can cover the electron transport of the electron transport layer by including the existence of proven organic radicals. Characteristics of any electron transport layer of organic radical materials. For example, this layer may include an organic radical material that is buried in a non-radical but still the parent of the electron transport material. Here, an electron transporting layer mainly containing organic radicals is defined as a layer in which an organic radical is a main component of the electron transporting layer. "In a preferred embodiment of the present invention, a pentaphenylcyclopentadienyl-based Ge (ten Benzylic dicyclopentadiene germanium) or? 1) The (decylphenylbicyclofluorenediene lead) complex is used as a source for preparing a thin layer of C〆 in a hollow deposition system. The present invention is more about OLEDs that can include a dopant compound in the emission layer. A dopant that can move the emission wavelength of the emission layer containing only the main compound is added to the main compound in an amount that can shift the emission wavelength for any reason. , So that the LED device emits light that can be perceived by the human eye as being close to one of them-one of the main colors is better. "Although it is generally considered that the characteristics describing color perception are subjective behaviors," the National Commission for Lighting Inspection (International Commission (Please Read the back-to-side note * -item before filling out this page). Loading ------ Order ----! -33- The paper button and towel ^ A 7 B7 __-- --- V. Invention It shows that (3!) Of mum—) has developed a quantitative chromaticity scale, also known as 准 rubbing criterion. According to this notation, a saturated color may have a single point representation with a quantitative basis based on the ratio of the definition axis of the chromaticity scale. Those skilled in the art should clearly see that this single point on the CIE scale will be difficult in practice, but fortunately, it does not need to meet the standards or specifications ^ In the more specific embodiment of the present invention, 〇LED produces the main color, The dopant is added to the host compound so that the OLED emits light that is perceived by the human eye as close to the main color. Through the implementation of the present invention, 'the intention is to construct the 0LED so that it can approximate the emission description characteristics of absolute (or saturated) chromaticity, as defined by the CIE standard. In addition, it is also expected that LEDs using the material of the present invention may exceed the frequency light. Gu Shi Luminance per square meter's ball is slightly lower in some moods, maybe as low as 10 turbidity per square meter is acceptable ° Printed here by the Central Government Bureau of the Ministry of Economic Affairs The compound is a compound that can be doped with a dopant to emit light with desired spectral characteristics. The term "M host" is used to refer to a compound in an emission layer that accepts hole / electron recombination energy and then transfers this excitation energy to a dopant compound via an emission / absorption energy transfer process, which typically exists Very low concentration. The dopant can then relax to a slightly lower energy It state, which emits all of its energy into a luminescence emission in the desired spectral region. 100% dopant excited state excitation will be emitted Energy-doped spines are described as having 100% quantum efficiency. For the host compound / dopant concentration to be used in SOLEDs with adjustable colors, if not all of the host compounds' hair rinses are transferred to androgen-doped, Most of them are better transferred to the dopant, which in turn may emit from lower energy levels, but have high quantum efficiency and produce visible radiation with the desired chromaticity. -34- Material (CNS) A4 specification (21GX297 Gongchu) Μ _____B7 V. Description of the invention (32) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, on the terms used here. An electron transport / emission layer of a heterogeneous structure OLED device, or an individual emission layer of a dual heterogeneous structure device. As known to those skilled in the art, the use of dopant species such as those published herein makes it not only possible Expand the range of colors emitted by OLEDs, and expand the range of possible choices of host and / or heterogeneous compounds. Therefore, for an effective host compound / dopant system, although the host compound can be doped Agent species have strong emission in the spectral region where light is strongly absorbed by the species, but it is better for the host to have no emission band in the region where the dopant also emits strongly. In the structure where the host compound is also used as electricity, it is extra Standards such as oxidative transport in situ energy of a species have also become a consideration. However, in general, the spectral characteristics of the host and dopant species are the most important criteria. The amount of dopant present is sufficient to make the main material The emission wavelength of the branch is shifted as close as possible to the amount that will saturate the main color as defined by the CIE scale. Typically, the effective amount is from about 0.01 to 10.0 in terms of the emission layer. Ear percentage. The preferred amount is from about 0.1 to 1.0 mole percentage. The main criterion for determining the proper doping level is the extent to which emission with appropriate spectral characteristics can be effectively obtained. For example, without limitation, such as doping The amount of the dopant species is too low, so the emission from the device will also include the light component from the host compound itself, which will be at a shorter wavelength than the expected emission from the dopant species. Conversely, the If the amount is too high, the emission efficiency may be adversely affected by self-quenching-a net non-emissive mechanism. Or, too high amounts of dopant species may adversely affect the hole or electron transport of the host material. Properties. Another specific example of the present invention relates to the paper containing (5-hydroxy) quinol-35-. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 ^ < 297 * ^^ ~ y (Please read first Note on the back, please fill out this page)
、1T Α7 Β7 五、, 1T Α7 Β7 five,
發明説明(33) 琳)之金屬錯合物之主材料的發射屠, (V) η 其中Μ爲A1、Ga、In、Ζη或Mg,如Μ爲A1、Ga或In,則 η〜3,如μ爲Zn或Mg,則π=2 〇 本發明之又另一具體實例係關於包括具有化學式VI之化 學結構之内鹽的摻雜劑材料: - ---L---.— _,'1痒 —I 一 " I / (請先閱讀#-*面之注t事項再填寫本頁)Description of the invention (33) Lin) The launch of the main material of the metal complex, (V) η where M is A1, Ga, In, Zη or Mg, if M is A1, Ga or In, then η ~ 3 If μ is Zn or Mg, then π = 2. Yet another specific example of the present invention relates to a dopant material including an internal salt having a chemical structure of Chemical Formula VI:---- L ---.- _, '1itch—I 一 " I / (Please read #-* 面 之 Notet before filling out this page)
,/1 CVI) R2, / 1 CVI) R2
、1T 其中Ri、R2、1及114彼此分別爲未被取代或被取代的烷基 、芳基或雜環(例如吡咯),及115和116彼此分別爲未被取代 或被取代的烷基' 芳基、OH或NH2。此種化合物在此稱爲 雙苯基方形酸銪化合物。 再更明確言之,本發明之其中一個具體實例係關於包括 具有化學式VII之化學結構之化合物之内豫的摻雜劑材料: (VE) 其中R=烷基。此種化合物在此稱爲方形酸鐫染料。 本發明之又另一具體實例係關於包括具有化學式VIII之 化學結構之靛藍染料化合物的摻雜劑材料: 36 汝尺朗用巾關家料(CNS ) Α侧M 210X 297公釐, 1T where Ri, R2, 1 and 114 are unsubstituted or substituted alkyl, aryl or heterocyclic ring (such as pyrrole), and 115 and 116 are unsubstituted or substituted alkyl group, respectively. Aryl, OH or NH2. Such compounds are referred to herein as bisphenyl square acid sulfonium compounds. To be more specific, one of the specific examples of the present invention relates to a dopant material including a compound having a chemical structure of Chemical Formula VII: (VE) where R = alkyl. Such compounds are referred to herein as square acid fluorene dyes. Yet another specific example of the present invention relates to a dopant material including an indigo dye compound having a chemical structure of Chemical Formula VIII: 36 Ruchilang towel household material (CNS) A side M 210X 297 mm
U 經濟部中央橾準局員工消费合作社印掣U Printed by the Consumer Cooperatives of the Central Government Bureau of the Ministry of Economic Affairs
五、發明説明(34 A7 B7V. Description of the invention (34 A7 B7
(Vffl) 其中X=NH、NR9、S、Se、Te或Ο,其中爲娱·基或苯 基,及117和118彼此分別爲未被取代或被取代的燒基或芳基 、或?r-電子供電基團諸如-OR、-Br、-NR2等等或π-電子 受體基團諸如-CN、-Ν〇2等等。 再更明確言之,本發明之另一具體實例係關於包括具有 化學式IX之化學結構之靛藍染料 < 合物的摻骓劑材科: (IX) 閏 讀 背. 面 5- S- 亊 ^ 寫 本., 頁 裝(Vffl) where X = NH, NR9, S, Se, Te, or O, where is an aryl group or a phenyl group, and 117 and 118 are each an unsubstituted or substituted alkyl or aryl group, or? An r-electron-donating group such as -OR, -Br, -NR2, etc. or a π-electron acceptor group such as -CN, -NO2, etc. To be more specific, another specific example of the present invention relates to an erbium-doped material family including an indigo dye < compound having a chemical structure of Chemical Formula IX: (IX) 闰 Read Back. 面 5- S- 亊 ^ Copybook., Page
其中Χ=ΝΗ 〇 本發明之另一具體實例係闞於包含烯化合物,例如〇“缔 化合物之摻雜劑材料。 6〇 關於本發明之説明性例子’主化合物以包括化學式V之 化合物較佳,其中Μ = Α1及η=3 ,參(5·羥基-♦喏啡 (,'Α1χ3"): ) ^ (X: -s-r· 經濟部中央標华局員工消费合作社印¾Where X = NΗ. Another specific example of the present invention is a dopant material containing an olefin compound, for example, an "associated compound. 6 Illustrative examples of the present invention. The main compound preferably includes a compound of formula V , Where M = Α1 and η = 3, see (5 · Hydroxy- ♦ 喏 喏 (, 'Α1χ3 "):) ^ (X: -sr · Printed by the Consumer Standards Cooperative of the Central Standardization Bureau of the Ministry of Economic Affairs ¾
及摻雜劑化合物以包括化學sXI之方形酸^染科化合物較 佳,二氫氧化1,3-雙[4-(二甲基胺基)-2-羥苯基卜2,4,二又 獲 37 本纸張尺度顧中關家鮮(CNS)⑽拔(21GX297 A7 B7 五、發明説明(35) 基環丁辛基k,雙(内盪)[63842-83-ipAs the dopant compound, a square acid chromophore compound including chemical sXI is preferred, 1,3-bis [4- (dimethylamino) -2-hydroxyphenylbenzene 2,4, 2 and 2 dihydroxide Acquired 37 paper standards Gu Zhongguan Jiaxian (CNS) ⑽ (21GX297 A7 B7 V. Description of the invention (35) Cyclopentinyl k, double (internal swing) [63842-83-ip
經濟部中央橾隼局負工消費合作社印製 可將眞空沉積、單一不均質結構的OLED製造成具有包 括化學式X之主化合物及化學式XI之摻雜劑化合物的電子 輸送層,其中OLED具有特別遑合於〇LED之電流-電壓(I-V)特性、紫外可見光、光子激發光及電激發光性質。據信 此特殊主化合物/摻雜劑组合之效#係以獲致自主化合物至 摻雜劑之高度的能量轉移爲基礎β對逋當配對的主化合物 及摻雜劑,此一高量値的能量轉移相較於單獨使用主化合 物,可獲致更有故的電激發光。 雖然不打算受本發明對此處所發表之代表性具«實例之 理論的限制,但關於説明主化合物及摻雜劑化合物之此等 组合可如何選擇及配對以提供有故電激發光(EL)之方式, 可將具有及不具有摻雜劑染料化合物之Alx3主化合物之光 予激發光(PL)與亦製備成具有及不具有摻雜劑化合物之 Al比較:Printed by the Central Government Bureau of the Ministry of Economic Affairs and Consumer Cooperatives, it is possible to manufacture hollow-deposited OLEDs with a single heterogeneous structure into an electron transport layer with a main compound of formula X and a dopant compound of formula XI, where OLEDs have a Combined with the current-voltage (IV) characteristics, UV-visible light, photon excitation light, and electrical excitation light properties of OLED. It is believed that the effect of this special host compound / dopant combination is based on the high energy transfer from the autonomous compound to the dopant. Β is the paired host compound and dopant, a high amount of plutonium energy. Compared with the use of the main compound alone, the transfer can obtain more exciting electrical excitation light. Although not intending to be limited by the present invention's theory of representative examples published herein, it is to explain how such combinations of host compounds and dopant compounds can be selected and paired to provide the old electrical excitation light (EL) In this way, the light pre-excitation light (PL) of the Alx3 main compound with and without the dopant dye compound can be compared with Al also prepared with and without the dopant compound:
此等化合物之PL可利用標準技術測量,例‘,將化合物浸 入溶劑中,將其暴露至光子激發源,並利用諸如購自美國 -38 - 本紙張尺度i用中 A7 ___B7五、發明説明(36 ) 經濟部中央梂準局貝工消费合作社印製 新澤西州薩摩維爾市(Somerville)光子技術國際(Photon Technology International)之設備測量光予激發光搏成波 長之函數》 Alq3、Alx3及Gax3之PL光譜示於圈11 » Alx3產生最大 値在約620毫微米之橙色光子教發光,其相對於具有PL最 大值在約515毫微米之Alq3類著地向紅位移。據信此大的 紅色位移對於達成自Alx3主化合物至紅色螢光染料摻骓劑 之高度能量轉移有顯著助益。製備成具有未摻雜及摻雜 Alx3層之OLED的EL光譜示於《12 »雖然未摻雜的主材料 相較於主材料之PL光譜具有稍向紅移的EL光譜,但例如 ,如以擦準的CIE比色系統描述特性,最大値係發生在仍 具有橙色外觀之波長區域(x=〇-565,y=0.426)。然而,當 將此主材料摻雜化學式XI之内蠆染料時,EL光譜具有在顯 著向紅色移動之波長區域中的最大链(x=0.561,y=0.403)。 本發明之其他具體實例係關於具有包括含化學式VIII之 靛蓝染料化合物或烯化合物之摻雜劑之發射層的OLED。 此等種類之化合物物種係以化學式IX之靛蓝染料化合物及 烯化合物C60爲代表,對此等種類之化合物的範固完全沒有 限制。如圈14所示之此等化合物以及化學式XI之雙酚方形 酸鑌化合物及吸收光譜顯示此等化合物具有經逋當配合以 接受來自主化合物Alx3&Alq3之光子激發光的吸收膂寬。 如圈15所示之此特摻雜劑的光子激發光光譜顯示各此等 化合物在可見光譜之紅色區域或朝向紅色區<域產生發光。 此外,如將烯或方形酸銪染料摻雜劑加入使用Alx3或Alq3 ----„-----i^-- - Γ , (請先W讀背面之注意事項再填寫本萸)The PL of these compounds can be measured using standard techniques, for example, 'immersing the compound in a solvent, exposing it to a photon excitation source, and using such materials as purchased from the United States -38-A7 ___B7 in this paper scale 5. Description of the invention ( 36) Printed by Photon Technology International, Somerville, NJ, Equipment for Testing of Light as a Function of Wavelength as a Function of Wavelength by Alcohol Consumer Cooperative of Central Bureau of Standards and Quarantine of the Ministry of Economic Affairs Alq3, Alx3, and PL of Gax3 The spectrum is shown in circle 11 »Alx3 produces an orange photonic light emission with a maximum chirp at about 620 nm, which is shifted toward red with respect to an Alq3 class having a PL maximum at about 515 nm. It is believed that this large red shift is significant for achieving a high energy transfer from the Alx3 host compound to the red fluorescent dye erbium dopant. The EL spectrum of an OLED prepared with undoped and doped Alx3 layers is shown in "12» Although the undoped host material has a slightly red-shifted EL spectrum compared to the PL spectrum of the host material, for example, The accurate CIE colorimetric system describes the characteristics, and the largest occurrence occurs in the wavelength region that still has an orange appearance (x = 0-565, y = 0.426). However, when this host material is doped with a dysprosium dye of chemical formula XI, the EL spectrum has the largest chain in a wavelength region significantly shifted toward red (x = 0.561, y = 0.403). Other specific examples of the present invention relate to an OLED having an emission layer including a dopant including an indigo dye compound or an olefin compound of Chemical Formula VIII. These kinds of compound species are represented by the indigo dye compound of the chemical formula IX and the olefinic compound C60, and there is no limit to the range of these kinds of compounds. These compounds as shown in circle 14 and the bisphenol square acid sulfonium compound of Chemical Formula XI and the absorption spectrum show that these compounds have an absorption width that is properly coordinated to accept photon-excitation light from the main compounds Alx3 & Alq3. The photon excitation light spectrum of this particular dopant as shown in circle 15 shows that each of these compounds emit light in the red region of the visible spectrum or toward the red region < domain. In addition, if dopene or square acid dysprosium dopant is added to use Alx3 or Alq3 ---- „----- i ^--Γ, (Please read the precautions on the back before filling in this 萸)
1T1T
U -39- 本紙張尺度適用中國國家標準(cSJS ) A4規格(210X297公釐〉 經濟部中央榡隼局貝工消费合作社印褽 A7 B7 五、發明説明(37 ) 作爲主材料之單一不均質結構裝置中之0LED的電激發光 光譜所説明,各此等化合物經證實在足.狗的摻雜劑滚度下 可具有完全轉移自主化合物之激發能,見國16、17、18。 部分的能量接著由掺捧刻放射成電激發光。摻雜劑取代具 有該摻雜劑之主化合物之實質上全部發射的容量’例如’ 在可調整箱色的SOLED中特別有利。在具有多於一個顏色 放射層之此等裝置中,希望各層具有其各自定義明確的色 度及不會輿任何其他層之光譜發射重疊的光譜發射。 含有代表性靛藍染料化合物之OLED的電激發光發射經 證實具有接近650毫微米(具有CIE値,x=0.693及 y=0.305)之最大値的發射帶,其產生飽和的紅色外觀。 (5-羥基)喹喏啉之Zn及Mg衍生物亦經製備及發現產生與 對Alx3#觀察到者埤乎相同的PL光譜。鑑於八化3作爲紅色 發射摻雜劑之主材料的故用,其中亦有良好的能量配合, 此PL光譜顯示Zn及Mg衍生物亦可有效作爲適當選擇之紅 色發射摻雜劑的主材料》 (5-羥基)峻喏琳之Ga衍生物亦經製備及發現具有如B11 所示之PL發射光譜》此等結果類示Ga類似物不僅可有效作 爲接雜發射材料,並且可作爲技摻雜材料。 其他主化合物或收容化合物之例子包括展示及說明於 1996年8月6日提出申請之申請人之共同申請中之美固專利 申請案编號第08/693,359號中之類型的發射化合物及/或 主化合物。本發明之進一步的代表性例子包、括根棣化 XII之發射化合物: + & 40 (#先閱讀背面之注t事項再填寫本頁)U -39- This paper size is in accordance with Chinese National Standard (cSJS) A4 (210X297 mm) A7 B7 printed by the Central Government Bureau of Shellfish Consumer Cooperatives V. Description of the invention (37) A single heterogeneous structure as the main material The electrical excitation light spectrum of the 0LED in the device shows that each of these compounds has been proven to have full transfer of the excitation energy of the autonomous compound under the dopant roll of the dog, see countries 16, 17, and 18. Partial energy The dopant is then radiated into electrically excited light. The dopant replaces substantially all of the emission capacity of the main compound with the dopant. For example, it is particularly advantageous in SOLEDs with adjustable box colors. In having more than one color In these devices of the emissive layer, each layer is expected to have its own custom-defined chromaticity and spectral emission that does not overlap with the spectral emission of any other layer. The electrically excited light emission of an OLED containing a representative indigo dye compound has been confirmed to be close to 650 nm (with CIE 値, x = 0.693 and y = 0.305) maximum erbium emission band, which produces a saturated red appearance. (5-hydroxy) quinoline Zn and Mg derivatives are also The preparation and discovery produced almost the same PL spectrum as observed for Alx3 #. In view of the use of Bahua 3 as the main material of the red emitting dopant, which also has good energy coordination, this PL spectrum shows Zn and Mg Derivatives can also be effectively used as the main material of appropriately selected red emitting dopants "(5-Hydroxy) Jun Zhilin's Ga derivative has also been prepared and found to have a PL emission spectrum as shown in B11" These results are shown Ga analogs are not only effective as dopant emitting materials, but also as technical doping materials. Examples of other main compounds or containment compounds include the demonstration and explanation of Meigu in the joint application of applicants who filed applications on August 6, 1996 Emission compound and / or host compound of the type described in Patent Application No. 08 / 693,359. Further representative examples of the present invention include emissive compounds including radicalized XII: + & 40 (# 先 读 背(Note the matter t fill in this page)
V Γ ____一 五、發明説明(38 ) A7 B7 (χπ>3 其中Μ爲諸如A1或Ga之金屬的三價金屬離子;及R爲烷基 、苯基、被取代的烷基、被取代的苯基、三甲基矽規基、 或被取代的三甲基矽烷基;以及其中X、Y、及2各分別及 獨立地爲C或N,以致X、Y及Z之至少兩者爲N ;及化學式 XIII ··(观)• J 3 根據化學式I之化合物的特定例子提供於®20,其皆係可 於市面麻得的物種(艾矩化學品公同(Aldrich Chemical Co” Inc.))。 如於許多受讓給柯達公司(Kodak)之美國專利(參見,例 *如,Tang等人之美國專利第5,5 52,678號)中所發表,利用 於彼等綠色發射OLED中之經常使用的發射化合物爲通式 如下之峻啦ft藉合物:V Γ ____15. Description of the invention (38) A7 B7 (χπ > 3 where M is a trivalent metal ion such as A1 or Ga; and R is an alkyl group, a phenyl group, a substituted alkyl group, a substituted Phenyl, trimethylsilyl, or substituted trimethylsilyl; and wherein X, Y, and 2 are each independently C or N, so that at least two of X, Y, and Z are N; and chemical formula XIII · (view) • J 3 are provided in ® 20 according to specific examples of compounds of formula I, which are all species available on the market (Aldrich Chemical Co "Inc. )). As published in many U.S. patents assigned to Kodak (see, e.g., U.S. Patent No. 5,5 52,678 to Tang et al.), Used in their green-emitting OLEDs The commonly used emissive compound is a borne compound with the general formula
(請先閲讀背面之注意事項再填寫本頁) -裝 訂 經濟部中央標準局貝工消费合作社印装(Please read the precautions on the back before filling out this page)-Binding
J 3 其中Μ爲諸如鋁及鎵之金屬的三價離子。根據此通式之範 例的綠色發射化合物將係亦稱爲Alq3之麥(S-羥基嗤啉)鋁 。以化學式XII及XIII表示之本發明的化合物,由於改變 的配位子結構而具有紅色位移發射。化學式XII之化合物 -41- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公着) 五、發明説明(39 ) A7 B7 的選择係以將兩個氮原子加入喹啉鹽配位子之吡啶側造成 100毫微米相對於來自八丨幻之發射之發射波長位移的觀察 結果爲基礎。 採用此種使OLED之發射紅色位移的方法,化學式XII之 化合物經設計及合成成具有將來自/Uq3類型之收容化合物 材料之發射朝向較短波長移動的特定用途。化學式XII之 配位子爲提供喹啉鹽基配位子之許多相同結構特性,但具 有對Alq3有頰著位移之發射之稠環、多雜原子結構的一例 予。 - 以化學式XIII表示之化合物雎終不爲金屬錯合物,但其 可製備成供OLED中之HTL層用的電洞傳導材料。除了作 爲電洞輸送材料外,化學式XIII之化合物同時亦展現令人 漢意的發射特性。此化合物以及化學式XII之化合物的發 t請先閲讀背面之注意事項再填寫本頁) 裝. 訂 表1 •化合物 吸收Λ 發射A Alq3 380nm 540nm XII 280nm 390nm XIII 35 5nm 402nm ο _I本 經濟部中央標準局貝工消费合作社印裝 根本發明之另一具體實例,闽22頰示在明亮環境光線條 件,諸如於哧光下之高對比的TOLED顯示。本發明之高對 比TOLED顯示包括TOLED顯示TD及低反射比的吸收器, 諸如設置於顯示TD後方之黑色吸收器BA丨TOLED顯示 TD可製造成如美國專利申請案編號第〇8/354 674及 42 执張尺度適用中us家縣(CNS) A视格(21()><297公4 A7 _________B7 五、發明説明(40 ) 08/613,207號所發表,將其全體内容併入本文爲參考资料。 如圈22所説明’自明亮光源L,諸如太陽,發射之光線r ,通過TOLED頰示TD之各個層,並被黑色吸收器ba所吸 收。結果,由顛示TD所發射並被觀看者V觀看到之光線【 未如同習知類示之情況般地被顯苹所反射之環境光線所洗 除。 根據本發明之高對比顯示之一具體實例的橫剖面圖示於 圈23。TOLED 1係設置於透明基材2上,透明基材2再設 置於低反射比的吸收器3上。ήΤΟΙΕϋ 1發出之光線I朝向 觀看者前進。爲簡單起見,將包括數個不同材料層之 TOLED 1示爲一層。透明基材2可包括破瑱或塑摩,其可 爲軟質或硬質。 低反射比的吸收||3例如可包括至少在面對基材2之面上 漆成或印刷成黑色的一層紙或厚纸板。亦可.將低反射比的 吸收器3直接沉積於基材2之底面上,諸如經由將基材之底 剖漆上黑色漆,以消光漆較佳。低反射比的吸收器3亦可經 由將碳黑旋轉塗布於聚合物母材或經由蒸發沉積而達成。 經濟部中央標準局貝工消费合作社印繁 根據本發明之高對颟示之第二個具體實例的橫剖面阈示 於圈24 »在此具體實例中,低反射比的吸收器3係設置於 TOLED 1與基材2之間。在圈24之具雒實例中,低反射比的 吸收器3係沉積於基材2上。基材2不需爲透明。亦可將低 反射比的吸收器3及基材2作成一層。 由於希望使低反射比的吸收器3面對觀看薯之表面儘可能 地具吸收性,此表面可相當杻糙,因此可能不希望在其上 -43- 本紙張尺度適用中國國家^準(CNS ) Α4規格(2]〇χ297公楚) 經濟部中央標準局员工消费合作社印繁 A7 _— _ __ _ B7 五、發明説明(41 ) 製造TOLED 1 β如此,若須要,可在反射比吸收器3上沉 積平面化層4,以提供在其上沉積T〇LEp i的平滑表面。 平面化層4可包括,例如,聚合物或塑膠,且可經由旋轉 塗布而施給。 雖然如前所述,低反射比的吸咚器可以"黑色吸收器,,實 現,但本發明亦可涵蓋使用具有不同於由丁〇1^£)所發出顏 色之顏色的低反射比吸收器。例如,在本發明之範蔺内亦 可使用在紅色發射TOLED後方之暗綠色吸收器,或再其他 的選定顏色组合,以提供高色彩對比的顯示。因此,低反 射比的表面可在光譜的整個可見區域内具有高的光吸收, 以產生灰至黑的表面,或其可僅在相當於由光發射裝置所 產生之波長區域之部分的光譜區域中具有高的吸收。對於 黑色吸收器,光吸收以至少約50%較佳,及約80-90%或再 更高更隹。 爲在垂直於OLED之方向上引出再更多的el光,可在透 明的ITO陽極上沉積抗反射(AR)塗層。對於習知的〇led ,此需要在沉積ITO層及其餘的OLED層之前,在透明基 材的上方沉積AR塗層。在此一型態中,必須小心注意透明 基材中之反射。對於IOLED,EL光不會通過基材,而使 AR塗層之設計簡化。並且.,藉由IOLED,AR塗層可直接 沉積於陽桎上,因此其可同時作爲鈍化層,以保護^)!^:!) 使免受舆大氣有關的降解。 本發明之IOLED結構亦可製造成具有一或;多個遽光器結 構以控制發出光的光譜寬度。圏29潁示製造於分佈布拉格 44 - ^紙張尺度適用中國國家標率1"CNS> A4規格(210X297公釐) '-—-- (請先閲讀背面之注意事項再填寫本頁) 裝· 訂 五、發明説明(42 ) A7 B7 經濟部中央橾準局员工消费合作社印製 反射器(DBR)結構6〇上方之i〇led 5〇,此結構60再製造 於基材70上》DBR結構亦可稱爲多層堆^(MLS),諸如由 H· A. MacLeo.d ,屋里濾光器(Thin Film Optical Filters) 94-110(1969)所敎授。DBR結構60係作成介電材料之高 度反射層的1/4-波長堆疊62。可將堆疊62作成具有二氧化 鈦Ti〇2及二氧化矽Si02<2至10個交替層。在堆疊62上沉 積一層ITO 61。在ITO層61上沉積OLED 50之陰極55, 其係形成爲Mg:Ag合金之薄的半透明層。然後依序沉積 ETL/EL層 54、HTL 53、保護層 52及ITO陽極51 » ITO陽極51及底部DBR結構60冬组合可提供良好的空腔 及微空腔作用。尤其,如ETL/EL層54之厚度實質上等於 λ /2n,其中;I爲發射光之波長,及η爲ITO陽極層51之反 射率(其相對於空氣大約爲2.0),則光譜窄化在OLED之有 效故率顳著增加下達成。 爲更進一步窄化由圖29之OLED所出之光的光譜,可將 另一DBR結構置於OLED 50之上方。然而,此將需要自結 合結構之倒面設立至OLED之陽極51的電通路《另一種方 式爲此一頂部-側面DBR可被由,例如,有機染料薄膜所 组成的濾色層所取代。 本發明更提供利用磷光殖層以使自有機光發射材料發出 之光顏色低向變頻至少不同顏色的單色及多色光發射裝置 。在本發明之一具髏實例中,使用低向變頻層在堆疊配置 的OLED中將自有機光發射層發出之藍光缽變成紅光。在 本發明之另一具饉實例中,使用低向變頻層將自有機光發 -45- 本紙張尺度適用中國國家橾率(CNS ) A4規格(2丨0X297公釐) U3. ----· C-. (請先閲讀背面之注意事項再填寫本頁)J 3 where M is a trivalent ion of a metal such as aluminum and gallium. An example of a green emitting compound according to this general formula would be wheat (S-hydroxyxanthroline) aluminum, also known as Alq3. The compounds of the present invention represented by the chemical formulae XII and XIII have red shifted emissions due to the changed ligand structure. Compound of Chemical Formula XII-41- This paper size applies to Chinese National Standard (CNS) A4 specification (210X297). 5. Description of the invention (39) The choice of A7 B7 is to add two nitrogen atoms to the quinoline salt ligand. The observation that the pyridine side caused a shift of 100 nanometers with respect to the emission wavelength from the emission of octamon is based. With this method of shifting the emission red color of OLEDs, the compound of formula XII is designed and synthesized to have a specific purpose of shifting the emission from the / Uq3 containing compound material towards shorter wavelengths. The ligand of chemical formula XII is an example of a fused ring, multi-heteroatom structure that provides many of the same structural characteristics of quinoline-based ligands but has buccal shift emission to Alq3. -The compound 雎 represented by the chemical formula XIII is not a metal complex, but it can be prepared as a hole-conducting material for the HTL layer in an OLED. In addition to being a hole-transporting material, compounds of formula XIII also exhibit desirable emission characteristics. Please read the precautions on the back of this compound and the compound of formula XII before filling this page). Order Table 1 • Compound absorption Λ Emission A Alq3 380nm 540nm XII 280nm 390nm XIII 35 5nm 402nm ο I Central Standard of the Ministry of Economy Another specific example of the fundamental invention of the printed packaging of the local co-operative consumer cooperative, the Min 22 cheek is shown in bright ambient light conditions, such as a high-contrast TOLED display under low light. The high-contrast TOLED display of the present invention includes a TOLED display TD and a low reflectance absorber, such as a black absorber BA disposed behind the display TD. The TOLED display TD can be manufactured as U.S. Patent Application No. 08/354 674 and 42 The scale of the application is applicable to the US county (CNS) A sight (21 () > < 297 Gong 4 A7 _________B7 V. Invention Description (40) published in 08 / 613,207, the entire content of which is incorporated herein as References. As explained in circle 22, 'from the bright light source L, such as the sun, the light r emitted by the TOLED cheek shows the layers of the TD and is absorbed by the black absorber ba. As a result, it is emitted by the inverted TD and is The light seen by the viewer V is not washed away by the ambient light reflected by the display as in the conventional case. A cross-sectional view of a specific example of the high contrast display according to the present invention is shown in circle 23. The TOLED 1 is arranged on a transparent substrate 2, and the transparent substrate 2 is arranged on the absorber 3 with a low reflection ratio. The light I emitted by the price 1 goes toward the viewer. For simplicity, it will include several layers of different materials TOLED 1 is shown as a layer. Transparent The substrate 2 may include a crack or a plastic mold, which may be soft or hard. The absorption with a low reflectance || 3 may include, for example, a layer of paper or a thick layer of paint or printed on at least the side facing the substrate 2 Cardboard. It is also possible to deposit the absorber 3 with low reflectance directly on the bottom surface of the substrate 2, such as by matting the base of the substrate with black paint to extinction paint. The absorber 3 with low reflectance is also This can be achieved by spin-coating carbon black on the polymer base material or by evaporative deposition. The cross-section threshold of the second specific example of the high-contrast indication of the present invention by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs is shown in Circle 24 »In this specific example, the low reflectance absorber 3 is disposed between TOLED 1 and the substrate 2. In the specific example of circle 24, the low reflectance absorber 3 is deposited on the substrate 2 The base material 2 does not need to be transparent. The absorber 3 and the base material 2 with low reflectance can also be made into one layer. Since it is desirable to make the absorber 3 with low reflectance facing the surface of the potato as absorbent as possible, This surface can be quite rough, so you may not want to use it on this paper. Use China National Standard (CNS) A4 specification (2) 0297 mm) Central Consumers Bureau of Ministry of Economic Affairs, Consumer Cooperatives, India and India A7 __ _ __ _ B7 V. Description of Invention (41) Manufacturing TOLED 1 β So, if necessary A planarization layer 4 may be deposited on the reflectance absorber 3 to provide a smooth surface on which TOLEpi is deposited. The planarization layer 4 may include, for example, a polymer or plastic, and may be applied via spin coating. Although, as previously mentioned, a low-reflectance absorber can be realized as a "black absorber," the present invention also covers the use of low-reflection having a color different from the color emitted by Ding. Than the absorber. For example, within the scope of the present invention, a dark green absorber behind a red emitting TOLED, or another selected color combination may be used to provide a high color contrast display. Therefore, a surface with a low reflectance may have a high light absorption over the entire visible region of the spectrum to produce a gray to black surface, or it may be only in the spectral region corresponding to a portion of the wavelength region generated by the light emitting device Medium has high absorption. For a black absorber, the light absorption is preferably at least about 50%, and about 80-90% or more higher. To extract even more el light in a direction perpendicular to the OLED, an anti-reflection (AR) coating can be deposited on the transparent ITO anode. For the conventional Oled, this requires the AR coating to be deposited over the transparent substrate before the ITO layer and the remaining OLED layers are deposited. In this type, care must be taken to reflect in transparent substrates. For IOLED, EL light does not pass through the substrate, which simplifies the design of the AR coating. And, with IOLED, the AR coating can be directly deposited on the impotence, so it can also be used as a passivation layer to protect ^)! ^ :!) from atmospheric degradation. The IOLED structure of the present invention can also be manufactured to have one or more calender structures to control the spectral width of the emitted light.圏 29 颍 Made in 44 Prague. ^ Paper size is applicable to China National Standard 1 " CNS > A4 size (210X297mm) '---- (Please read the precautions on the back before filling this page) V. Description of the invention (42) A7 B7 Printed reflector (DBR) structure 60 on the consumer cooperative of the Ministry of Economic Affairs, Central Government Bureau, printed on top 50, this structure 60 is remanufactured on the substrate 70. The DBR structure is also It can be called a multilayer stack (MLS), such as taught by H.A. MacLeo.d, Thin Film Optical Filters 94-110 (1969). The DBR structure 60 is a 1 / 4-wavelength stack 62 of a highly reflective layer of a dielectric material. The stack 62 can be made to have 2 to 10 alternating layers of titanium dioxide Ti02 and silicon dioxide Si02. A layer of ITO 61 is deposited on the stack 62. A cathode 55 of the OLED 50 is deposited on the ITO layer 61, which is formed as a thin translucent layer of a Mg: Ag alloy. ETL / EL layer 54, HTL 53, protective layer 52 and ITO anode 51 »ITO anode 51 and 60 DBR structure at the bottom can be sequentially deposited to provide good cavities and microcavities. In particular, if the thickness of the ETL / EL layer 54 is substantially equal to λ / 2n, where I is the wavelength of the emitted light and η is the reflectance of the ITO anode layer 51 (which is about 2.0 with respect to air), the spectrum is narrowed Achieved with the temporal increase of the effective rate of OLED. To further narrow the spectrum of light emitted by the OLED of FIG. 29, another DBR structure may be placed above the OLED 50. However, this will require an electrical path from the reverse side of the combined structure to the anode 51 of the OLED. "Another way is that the top-side DBR can be replaced by a color filter layer composed of, for example, an organic dye film. The present invention further provides a monochromatic and multi-color light emitting device using a phosphorescent colonization layer to make the color of light emitted from the organic light emitting material low-frequency and at least different colors. In one example of the present invention, a blue light bowl emitted from an organic light emitting layer is turned into red light in a stacked OLED using a low-frequency conversion layer. In another example of the present invention, using a low-frequency conversion layer to emit organic light -45- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0X297 mm) U3. ---- · C-. (Please read the notes on the back before filling this page)
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I A7 _________B7五、發明説明(43 ) 經濟部中央標準局負工消费合作社印衮 吐層發出之蓝光轉變成綠及/或紅光。本發明之光發射裝置 史使用於各種單色及多色應用中,以提供具有高亮度及效 鲜之蘋示。 本發明亦可提供利用低向變頻磷光鳢層以提供高效率及 度之顯示的有機光發射裝置。根據本發明之光發射裝置 包括堆疊配置的多個有機光放射層,及設置於多個有機光 放射層之任兩者間的低向變頻碎光體層。 在關於低向變頻磷光體之本發明的第一個具體實例中, 將光發射裝置100設成如圈25所示·。在此有機光發射層之 堆疊配置中,第一個藍光發射層1丨2係設於基材111之上, 緣光發射層113係設於第一個藍光發射層112之上,紅色低 向變頻碎光體層114係設於綠光發射層113之上,及第二個 蓝光發射層115係設於低向變頻磷光髏層114之上。設置於 光發射層之間者爲透明的傳導層120、121、122及123 » 將金屬接觸層130設於第二個藍光發射層115之上。 設置於綠光發射層113及紅色低向變頻磷光醴層114之間 者爲鏡面結構125,其以介電材料的多層堆疊較佳。示於 圈25之鏡面結構125的特徵爲紅色通梦及藍色和緣色阻隔 帶(blocking bands),以分別防止紅色低向變頻赛光醴層 114被綠及益光發射層113及112之漱升(pumping)。藉由 反射綠及藍光,鏡面結構125亦可使裝置效率增加至少兩 倍之倍率。此外,鏡面結構125造成紅色低向變頻磷光饉 層114被第二個藍光發射層11 5造成紅色低d變頻磷光髏層 114被第二個蓝光發射層115之有故漱升,以致層Π4之厚 -46- 本紙張尺度適用中國國家橾準(CNS ) A4規格(210X297公釐) _—I (請先聞讀背面之注意事項再填寫本頁) 訂I A7 _________B7 V. Description of the invention (43) The blue light emitted from the vomiting layer of the Central Consumers' Bureau of the Ministry of Economic Affairs of the Consumer Cooperatives is converted into green and / or red light. The light emitting device history of the present invention is used in a variety of monochrome and multicolor applications to provide high-brightness and high-efficiency displays. The present invention can also provide an organic light emitting device using a low-direction frequency conversion phosphorescent phosphor layer to provide high-efficiency and high-level display. A light emitting device according to the present invention includes a plurality of organic light emitting layers arranged in a stack, and a low-frequency variable frequency shattering body layer disposed between any of the plurality of organic light emitting layers. In the first specific example of the present invention with respect to the low-frequency conversion phosphor, the light emitting device 100 is set as shown by a circle 25. In this stacked arrangement of organic light emitting layers, the first blue light emitting layer 1 丨 2 is disposed on the substrate 111, the edge light emitting layer 113 is disposed on the first blue light emitting layer 112, and the red color is low. The variable frequency light-breaking body layer 114 is disposed on the green light emitting layer 113, and the second blue light emitting layer 115 is disposed on the low-direction variable frequency phosphorescent cross layer 114. The transparent conductive layers 120, 121, 122, and 123 are disposed between the light emitting layers. The metal contact layer 130 is disposed on the second blue light emitting layer 115. Disposed between the green light emitting layer 113 and the red low-frequency conversion phosphorescent chirped layer 114 is a mirror structure 125, which is preferably a multilayer stack of a dielectric material. The mirror structure 125 shown in circle 25 is characterized by red dreams and blue and marginal color blocking bands to prevent the red low-directional frequency conversion race light layer 114 from being affected by the green and beneficial light emission layers 113 and 112, respectively. Pumping. By reflecting green and blue light, the mirror structure 125 can also increase the efficiency of the device by at least a factor of two. In addition, the mirror structure 125 caused the red low-direction variable-frequency phosphorescent phosphor layer 114 to be secondly lifted by the second blue light-emitting layer 115, and the red low-d variable-frequency phosphorescent cross-layer layer 114 was hoisted by the second blue-light emitting layer 115 for some reason, so that the layer Π4 Thick-46- This paper size is applicable to China National Standard (CNS) A4 specification (210X297mm) _—I (Please read the precautions on the back before filling this page) Order
-U A7 -------B7五、發明説明(44 ) 經濟部中央樣準局貝工消费合作社印製 度甚低於單通裝置(smgle_pass device)所需之厚度。例如 ’紅色低向變餐赛光fil層114薄至1〇〇〇_。 鏡面結構125係如技藝中已知之可使紅光通過但阻止綠 及藍光通過《任何適當材肖。例如,鏡面結構125包括設 置成多層堆4之具有不同介觉常_的至少兩種介電材料。 堆疊中之|的厚度界定可通過結構之波長範g。用於形成 鏡面結構125的典型無機介笔材料包括si〇2/Ti〇2及 Si〇2/SiNx。雖然此種無機材料係在本發明之範固内,但 使用有機介電材料諸如3,5,7,8-茶四叛二酸奸("NTCDA") 及聚四氟乙烯(TEFLON)較佳。使用有機介電材料使在用 於鏡面結構125之介電材科的沉積過程中損壞有機光發射 材料的危險減至最低》 如技藝中已知’光發射屠112、113及115係由當被電流 激發時發光的有機材科製成《因此,當在傳導層12〇及121 之兩端施加電饜時,圈25所示之光發射裝置將發出藪光, 及當在傳導層121及122之間施加雹壓時,其將發出綠光。 爲發出紅光,在傳導層I23及金屬接觸層13〇之間施加電壓 ’以致第二個蓝光發射層U5發出藍光,其接著再由紅色 低向變頻磷光體層114轉變成紅光。自第二個藍光發射層 發出蔹光並不可通過鏡面結構125,因此在層125及 130之間共振,因而造成紅色低向變頻磷光雄層114之有故 漱升。所得的紅光發射通過光發射層113及U2而進入基材 。明25所示之形態使紅光可較利用紅(色有機光發射 層所可行者更有故的發射。 •47- 本紙張尺度適用中國國家標準(CN’S丨A4規格(2IOX297公釐) {請先閱讀^-面之注私事項再填寫本頁) -裝· 訂 J. 克、發明説明(45 ) Α7 Β7 經濟部中央標準局負工消费合作社印製 在圈25所之具雄實例中,基材1U係實質上的透明基 财’諸如破壤、石英、石或塑膠。爲簡單起見,在圈 中將光發射;|112、113及115示爲單層《>然而,如技藝中 所熟知,當其不爲單廣聚合物裝置時,此等層實際上係包 括多個次廣(例如HTL、EL及ETL)e次層之配置頻而易見 係視裝置是否爲DH(雙重不均質結構)或SH(單一不均質結 搆)形態而定。 當透明的傳導層同時作爲一個先發射層之陰極及另一者 之陽桎,諸如層121時,其以包括姻_錄_氧化物(„IT〇··)較 #。當透明的傳導層不同時作爲蹌極及陽極,諸如廣122 祷’其提供作爲綠光發射層113之陰極,但由鏡面結構125 爽第二個蓋光發射層115分隔開,其以包括化合物電極較 隹’諸如半透明的低工作函數金屬及17〇。然而,雖然如 此,不同時作爲陰極及陽桎之陽極層以17^〇較佳β金屬接 觸層130包括任何遑當材料,諸如镁、叙、鋁、銀、金及 其合金。 在本發明之另一具體實例中,將綠色低向變頻磷光鳢層 126插於紅色低向變頻磷光髏層114輿第二個藍光發射層 115之間,如圈26所示。層126經由蔹光至綠光之中閼轉 變,而造成簸光至紅光的更省故轉變》 在本發明之另一具髏實例中,使用藍光發射層以使紅色 及綠色低向變頻磷光鳢層兩者激升,如圈27所示》在裝置 200中,第一個藍光發射層112係設於基材1<11之上,綠色 低向變頻礴光體層126係設於第一個蓝光發射層U2之上, -48- 本紙張尺度適用中國國家標準(CNS ) Α4規格(210 X 297公釐) ----^-----Γί^.— (請先閲讀背面之注*-事項再填寫本頁) 訂-U A7 ------- B7 V. Description of the invention (44) The printability of the Shellfish Consumer Cooperative of the Central Sample Bureau of the Ministry of Economic Affairs is much lower than the thickness required for the single pass device (smgle_pass device). For example, the 'red low-direction changing light fil layer 114 is as thin as 1000_. Mirror structure 125 is known in the art to allow red light to pass but prevent green and blue light from passing through any suitable material. For example, the mirror structure 125 includes at least two dielectric materials having different dielectric constants arranged in the multilayer stack 4. The thickness of | in the stack is defined by the wavelength range g of the structure. Typical inorganic stylus materials used to form the mirror structure 125 include SiO2 / Ti〇2 and SiO2 / SiNx. Although such inorganic materials are within the scope of the present invention, the use of organic dielectric materials such as 3,5,7,8-tea tetradine acid (" NTCDA ") and polytetrafluoroethylene (TEFLON) good. The use of organic dielectric materials minimizes the risk of damaging the organic light-emitting materials during the deposition of the dielectric materials used for the mirror structure 125. As is known in the art, 'Light Emissions 112, 113, and 115 are used by Dangdang The organic material that emits light when excited by current is made "Therefore, when an electric chirp is applied to both ends of the conductive layers 120 and 121, the light emitting device shown in circle 25 will emit chirped light, and when conductive layers 121 and 122 are applied, When hail pressure is applied between them, it will glow green. In order to emit red light, a voltage is applied between the conductive layer I23 and the metal contact layer 130, so that the second blue light emitting layer U5 emits blue light, which then changes from red low to the variable frequency phosphor layer 114 to red light. The chirped light emitted from the second blue light emitting layer cannot pass through the mirror structure 125, and therefore resonates between the layers 125 and 130, which causes the red low-direction frequency conversion phosphorescent male layer 114 to be hoisted for some reason. The resulting red light emission enters the substrate through the light emitting layers 113 and U2. The form shown in Ming 25 enables red light to emit more light than is possible with red (color organic light emitting layers). • 47- This paper size applies to the Chinese national standard (CN'S 丨 A4 specification (2IOX297 mm) {Please Read the ^ -Notes on Private Matters before filling out this page)-Binding and ordering J. Gram, Description of Inventions (45) Α7 Β7 The Central Consumer Bureau of the Ministry of Economic Affairs, Consumer Cooperatives printed in the heroic example of circle 25 Substrate 1U is a substantially transparent base such as soil, quartz, stone, or plastic. For simplicity, light is emitted in circles; | 112, 113, and 115 are shown as a single layer "> As is well known in the art, when it is not a single-wide polymer device, these layers actually include multiple sub-wide (such as HTL, EL, and ETL) sub-layer configurations and it is easy to see whether the device is DH ( Double heterogeneous structure) or SH (single heterogeneous structure) morphology. When the transparent conductive layer simultaneously serves as the cathode of one first emitting layer and the impotence of the other, such as layer 121, it includes marriage _ 录 _ Oxide („IT〇 ··) is better than #. When the transparent conductive layer is different, it acts as a cathode and anode, such as 122 pray 'It is provided as the cathode of the green light emitting layer 113, but separated by a mirror structure 125 and a second cover light emitting layer 115, which includes a compound electrode, such as a translucent low work function metal and 17 〇. However, it is not the same as the anode layer of the cathode and the anode. The 17 β β metal contact layer 130 includes any material such as magnesium, Syria, aluminum, silver, gold, and alloys thereof. In another specific example of the invention, the green low-direction variable-frequency phosphorescent chirped layer 126 is inserted between the red low-directional variable-frequency phosphorescent cross-section layer 114 and the second blue light-emitting layer 115, as shown by circle 26. The layer 126 reaches to In the green light, the thorium is transformed, resulting in a more obscure transition from dust to red light. In another example of the present invention, a blue light emitting layer is used to make both red and green low-frequency variable-frequency phosphorescent chirped layers surge. "As shown in circle 27" In the device 200, the first blue light emitting layer 112 is provided on the substrate 1 < 11, and the green low-frequency conversion phosphor body layer 126 is provided on the first blue light emitting layer U2. , -48- This paper size applies Chinese National Standard (CNS) Α 4 Specifications (210 X 297 mm) ---- ^ ----- Γί ^ .— (Please read the note on the back *-Matters before filling this page) Order
U A7 __ B7 五、發明説明(46 ) 經濟部中央標準局員工消f合作社印裝 第二個蓝光發射層115係設於綠色低向變頻層126之上,紅 色低向變頻磷光體層114係設於第二個蓝光發射層11 5之上 ,及第二個藍光發射層127係設於紅色低向變頻磷光體層 114之上。設置於光發射層之間者爲透明的傳導層12〇、 121、122、1:23及125。將金屬接觸層130設於第三個蓝 光發射膺127之上》此外,第一及第二個鏡面結構128及 125分別係設置在第一個藍光發射層112輿綠色低向變頻層 126之間,及在第二個藍光發射層115輿紅色低向變類磷光 髏層114之間。第一個鏡面結構128使紅光及綠光可通過, 而阻止蓋光之通過。第二個鏡面结構125使紅光可通過, 而阻止綠光及蔹光之通過。 關於其中之OLED更包括低向變頻磷光體層之本發明的 代表性具體實例,此一OLED可包括:透明基材;在該基 材上之第一個藍色有機光發射層;在該第—個蓝色有機光 發射層上之綠色有機光發射層;在該綠色有機光發射層上 \ 之鏡面結構,該鏡面結構包括至少一個介耄材料之多層堆 疊,該鏡面_構使紅光可通過,及阻止藍光及綠光之通過 ;在該鏡面結構上之紅色低向變頻磷光體層;及在該紅色 低向變頻磷光體層上之第二個薇色有機光發射層β , 或者,此一含低向夔類磷光體層之OLED可包括:方明 基材;在該基材上之第一個薮色有裁光發射層;在該第一 個蓝色有機光發射層上之第一個鏡面結構,該鏡面結構包 括至少一個介電材料之多層堆疊,該鏡面結1構使紅光及綠 光可通過,及阻止藍光之通過;在該第一個鏡面結構上之 -49- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意ί項再填寫本頁) 裝 訂 IIJ /Β__ν^U A7 __ B7 V. Description of the invention (46) The second blue light emission layer 115 printed by the staff of the Central Standards Bureau of the Ministry of Economic Affairs and the cooperative is printed on the green low-frequency conversion layer 126, and the red low-frequency conversion phosphor layer 114 is set Above the second blue light emitting layer 115, and the second blue light emitting layer 127 is disposed on the red low-frequency conversion phosphor layer 114. Disposed between the light emitting layers are transparent conductive layers 120, 121, 122, 1:23, and 125. The metal contact layer 130 is disposed on the third blue light emission layer 127. In addition, the first and second mirror structures 128 and 125 are respectively disposed between the first blue light emission layer 112 and the green low-frequency conversion layer 126. And between the second blue light-emitting layer 115 and the red low-directional metamorphic phosphorescent cross-layer 114. The first mirror structure 128 allows red and green light to pass, and prevents cover light from passing. The second mirror structure 125 allows red light to pass through, but prevents green light and white light from passing through. Regarding the representative specific example of the present invention in which the OLED further includes a low-direction variable-frequency phosphor layer, the OLED may include: a transparent substrate; a first blue organic light-emitting layer on the substrate; A green organic light emitting layer on each of the blue organic light emitting layers; and a mirror structure on the green organic light emitting layer, the mirror structure including at least one multilayer stack of dielectric materials, the mirror structure allows red light to pass through And prevent the passage of blue and green light; a red low-direction variable-frequency phosphor layer on the mirror structure; and a second magenta organic light-emitting layer β on the red low-direction variable-frequency phosphor layer, or, this one contains The OLED of the low-direction pseudo-phosphor layer may include: a fangming substrate; a first ocher-colored light-emitting layer on the substrate; and a first specular structure on the first blue organic light-emitting layer The mirror structure includes a multilayer stack of at least one dielectric material, and the mirror structure 1 allows red and green light to pass, and prevents blue light from passing; -49- on the first mirror structure, this paper size applies Chinese country Associate (CNS) A4 size (210X297 mm) (Please read the back of the note term ί then fill out this page) stapling IIJ / Β__ν ^
五、發明説明(47) 經濟部中央標隼局員工消费合作社印裝 緣色低向變顧赛光It層;在該綠色低向變頻碎光嫌層上之 第二個藍色有機光發射層;在該第二個蓝色有機光發射層 之鐘面結構,該破面結構包括至少一個介電村科之多層堆 #,該鏡面結構使紅光可通過,及阻止藍光和綠光之通過 *♦在該鏡面結構上之紅色低向變頻磷光體層;及在該紅色 低向變頻磷光雄層上之第三個蔹色有機光發射層。 本發明之光發射裝置視需要可在透明傳導層12〇與基材 111之間包括低損耗、高反射率之介電材料,諸如二氧化 鈥(Ti〇2)之層14〇。當透明傳導層n0係由爲高捐耗材料的 ITO製成時,層140爲特佳。1402及1丁0之反射率分別大 約爲2.6及2.2。層140因此實質上地消除在ITO中之導波 及吸收,自光發射層112、113及115發出之光現容易地傳 輸通過層140及基材iu。 本發明現將顯示其某些特定代表性具體實例之製造方式 作詳細説明,經理解爲實施例的材料、装置及方法步▼係 僅作説明用。尤其,本發明並不打算受限於此處所明確引 用的方法、材料、條件、程序參數、装置等等。 實施例 在沉積本發明之代表性OLED之有機薄膜之前,(100)Si 基材可經由在清潔劑溶液及去離予水中速續超音波滌洗而 清潔’然後於1,1,1·三氣乙烷中煮沸,於芮酮中滌洗’最 後再於2-丙醉中煮沸。在各清潔步樣之間,基材可於高纯 度的氮中乾燥。在沉積前之背景壓力一般爲今>< 10·7托爾以 下’及在沉積過程中之要力約爲5X10'7至1.1X10托爾。 -50· II .1 -- — I·1 I.........1 - ! 1 I I--- --C , (請先閱讀背面之注意Ϋ項再填寫本頁) 訂 本紙張尺度適用中國园家榡準(CNS > A4規格(210x297公釐〉 五、發明説明(48) A7 B7 經濟部中央標準局員工消费合作社印製 I. I有保護層之IOLED .丨丨 以在眞空中熱蒸發1000埃厚之由25:1 Mg-Ag合金所組 成的除極開始成長IOLED結構(圈1),接著再沉積500埃厚 的麥(8-羥基喹啉)鋁(Alq3)電子輸送及電激發光(EL)層, 及250埃厚之N,N,-二苯基-Ν,Ν·-雙(3-甲基苯基)-卜Γ-麟 苯-4,4’-二胺(TPD)之電洞輸送層(HTL)。或者,亦製造使 用4,4’-雙[N-(l-蓁基)-Ν-苯基-胺基]聯苯(《τ -NPD)作爲 HTL之IOLED,其結果類似於使用TPD所得的IOLED » 、 爲保護易碎的HTL使免受頂端ΙΤΟ陽極觸點之噴鎪沉積, 而使3,4,9,10-笸四羧二酸酐(PTCDA)或酞花青铜(CuPc) 薄膜β 典型的有機沉積速率範固係自1埃/秒至5埃/秒,基材保 持於室溫。最後,车2000:1 Ar:02環境,及5毫托爾之壓 力下,經由RF磁控管喷鍍蜃製ITO擦的而沉積頂端的ITO 層》RF功率爲5瓦,其造成200埃/小時之沉積速率。 具有PTCDA及CuPc PCLs之0.05平方毫米IOLEDs,以 及不具有PCL之裝置的順向偏壓電流-電壓(I-V)特性示於 圈2。圈3顛示圈2中之IOLEDs之光強度對電流(L-I)反應》 亦製備包括具有以下順序之層之結構的OLED:ITO層/60 埃 PTCDA/500 埃 NPD/500 埃 Alq3/1000 埃1^八呂/500 埃 Ag,以及類似但不具有PTCDA層之OLED。此裝置之電 流對電壓示於圈5。 Π.利用改良的ιτο沉積法製造OLEDs ' 在採用改良ITO沉積法之本發明的代表性實施例中,使 -51- 本紙張尺度通用中國國家標率(CNS ) Α4規格(210X297公釐) (許先閏讀背面之注意事項再填寫本頁) '<裝 訂 ό A7 ___B7 五、發明説明(49 ) 用購自美國加州帕羅歐圖市(Palo Alto)南牆科技公司 (Southwall Technologies, Inc.)之孩塗布ITO的市售玻璃 基材。將包括約300埃TPD之電洞輸送層沉積於ITO陽杆 層上,包括約500埃參(8-羥基喹啉)鋁(Alq3)之電子輸送層 沉積於TPD電洞輸送層上,及約120埃Mg-Ag之陰極層沉 積於Alq3電子輸送層上。 然後經由在約200sccm Ar及0.1 seem 02之存在下,僅 使用5瓦的RF功率將約150埃之ITO沉積於Mg-Ag陰極層 上,而製備根據本發明之ITO層,·然後在約200 seem Ar 及0.42 seem 02之存在下使用45瓦RF功率沉積額外的400 埃ITO。 圈7顯示此不均質結構之電流-電壓(i-v)特性。在此装置 之I-V特性輿具有在較低沉積速率下沉積全部ΙΤ〇層之 OLED之間没有實際上可辨識的差異。 雎然已説明圈6之特殊OLED結構,但應瞭解具有使用低 起始沉積速率沉積,然後再使用實質上較高沉積速率沉積 之ΙΤΟ層的任何OLED結構將係根據本發明。V. Description of the invention (47) The low-level change of the edge color of Gu Siguang It layer printed by the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs; the second blue organic light-emitting layer on the green low-frequency variable-frequency light-breaking layer; The clock face structure of the second blue organic light emitting layer, the broken face structure includes at least one dielectric stack of a multilayer stack #, the mirror structure allows red light to pass, and prevents blue and green light from passing through A red low frequency conversion phosphor layer on the mirror structure; and a third ocher organic light emitting layer on the red low frequency conversion phosphor male layer. The light emitting device of the present invention may include a low-loss, high-reflectivity dielectric material between the transparent conductive layer 120 and the substrate 111 as needed, such as a layer 14 of dioxide (Ti02). When the transparent conductive layer n0 is made of ITO, which is a high-consumption material, the layer 140 is particularly preferable. The reflectances of 1402 and 1.0 are about 2.6 and 2.2, respectively. The layer 140 thus substantially eliminates guided waves and absorption in the ITO, and light emitted from the light emitting layers 112, 113, and 115 is now easily transmitted through the layer 140 and the substrate iu. The present invention will now be described in detail by showing some specific representative specific examples of manufacturing methods, and the materials, devices, and method steps which are understood as examples are for illustration purposes only. In particular, the invention is not intended to be limited to the methods, materials, conditions, program parameters, devices, etc., explicitly cited herein. EXAMPLES Before depositing an organic thin film of a representative OLED of the present invention, a (100) Si substrate can be cleaned by rapid ultrasonic cleaning in a detergent solution and deionized water, and then cleaned at 1, 1, 1, 3 Boil in gaseous ethane, wash in ketone, and finally boil in 2-propanol. Between cleaning steps, the substrate can be dried in high purity nitrogen. The background pressure before deposition is generally > < 10 · 7 Torr or less < ' > and the force during the deposition process is about 5X10'7 to 1.1X10 Torr. -50 · II .1-— I · 1 I ......... 1-! 1 I I --- --C, (Please read the note on the back before filling this page) Order This paper size is applicable to China Garden Standard (CNS > A4 size (210x297 mm) V. Description of invention (48) A7 B7 Printed by I. I Protected IOLED in the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 丨 丨An IOLED structure (Loop 1) was grown by depolarizing a 25: 1 Mg-Ag alloy by thermally evaporating 1,000 Angstroms thick in the air, and then 500 Angstroms of wheat (8-hydroxyquinoline) aluminum (Alq3) was deposited. ) Electron transport and electro-excitation light (EL) layer, and 250 Angstroms of N, N, -diphenyl-N, N · -bis (3-methylphenyl) -BuΓ-linbenzene-4,4 Hole transport layer (HTL) of '-diamine (TPD). Alternatively, 4,4'-bis [N- (l-fluorenyl) -N-phenyl-amino] biphenyl ("τ -NPD) as the IOLED of HTL, the result is similar to the IOLED obtained by using TPD », in order to protect the fragile HTL from the deposition of the top ITO anode contact, and make 3,4,9,10- Carboxic dianhydride (PTCDA) or phthalocyanine bronze (CuPc) films β Typical organic deposition rates range from 1 angstrom / second to 5 Angstroms / second, the substrate is kept at room temperature. Finally, under the environment of 2000: 1 Ar: 02, and 5 mTorr, the top ITO layer is deposited by spraying ITO wiper with RF magnetron. The RF power is 5 watts, which results in a deposition rate of 200 Angstroms / hour. 0.05 mm2 IOLEDs with PTCDA and CuPc PCLs, and forward bias current-voltage (IV) characteristics for devices without PCL are shown in circle 2. Circle 3 shows the light intensity of IOLEDs in Circle 2 as a function of current (LI). An OLED including a layer structure with the following sequence is also prepared: ITO layer / 60 Angstrom PTDCA / 500 Angstrom NPD / 500 Angstrom Alq3 / 1000 Angstrom 1 ^ Balu / 500 Ang Ag, and similar OLEDs without a PTCDA layer. The current versus voltage of this device is shown in circle 5. Π. OLEDs were fabricated using the improved ιτο deposition method. In the representative embodiment, the paper standard is -51-. This paper standard is in accordance with China National Standards (CNS) A4 specification (210X297 mm). (Xu Xun 闰 read the precautions on the back before filling in this page) '&Binding; A7 ___B7 V. Invention Note (49) Used from South Wall Technology Company, Palo Alto, California, USA (Southwall Technologies, Inc.), a commercially available glass substrate coated with ITO. A hole transporting layer including about 300 Angstrom TPD was deposited on the ITO anode layer, and an electron transporting layer including about 500 Angstrom (8-hydroxyquinoline) aluminum (Alq3) was deposited on the TPD hole transporting layer, and about A cathode layer of 120 angstrom Mg-Ag was deposited on the Alq3 electron transport layer. An ITO layer according to the present invention is then prepared by depositing about 150 Angstroms of ITO on the Mg-Ag cathode layer using only 5 watts of RF power in the presence of about 200 sccm Ar and 0.1 seem 02, and then at about 200 In the presence of seem Ar and 0.42 seem 02, an additional 400 Angstroms of ITO was deposited using 45 watts of RF power. Circle 7 shows the current-voltage (i-v) characteristics of this heterogeneous structure. The I-V characteristics of this device have no practically discernable difference between OLEDs that deposit all of the ITO layers at a lower deposition rate. While the special OLED structure of circle 6 has been described, it should be understood that any OLED structure having an ITO layer deposited using a low initial deposition rate and then deposited using a substantially higher deposition rate would be in accordance with the present invention.
Ijl.具有含有機自由基之電予输送層之〇LEE> 1.含有機自由基之單一不均質結構 經濟部中央標隼局貝工消費合作社印製 將透明基材預塗布具有約.15歐姆/平方之薄片電阻的銦錫 巩化物(ITO)層。基材可於清潔劑中經超音波洗淨,接著 再於去離子水、1,13-三氣乙烷、丙酮及甲蜉中撤底滌洗 ,且在各步驟之間在純氮氣中乾燥。然後將、清潔的乾燥基 材轉移至眞空沉積系統。接著可在高眞空(<2xl〇'6托爾) -52- 本纸張尺度適用中國國家標f ( CNS ( 210X297公釐) A7 --------B7 五、發明説明(% ) 經濟部中央標準局員工消费合作社印策 下進行所有有機及金屬沉積。沉積係在2-4埃/秒之標稱沉 積速率下經由自設有擋板的Ta坩堝熱蒸發而進行》首先, 可将大約350埃之N,N,-二苯基-N,N'-雙(3-甲基苯基)1-1· 聨笨-4,4’-二胺(TPD)之層蒸氣沉積於清潔過的ITO基材上 。接著可將M(C5Ph5)2(其中Μ可爲Ge或Pb)之樣品加熱至 约250eC,釋出Cp*.,其可在TPd薄膜之上方沉積成層。 联之最终厚度可爲約400埃》接著可經由自個別的 Ta舟m(b〇at)共同蒸發,而沉積大約10:1 Mg:Ag原子比 之國形250毫_痛徑1,000埃電極的陣列。可沉積50〇埃厚 之Ag層,以_#極之大氣氧化。 基之雙重不均質結構 j -V»· ; ;. 雙重不均可經由包括個別的發射層而製造,此個 別發射層可作成爲_雜或未摻雜的參-(8-羥基喹琳)鋁Alq3 。雙重不均質結構可以實質上如同對單一不均質結構所説 明之方式製備得,除了在沉積TPD層之後及在沉積有機自 由基層之前沉積Alq3之個別發射層。 择主材料及/或摻雜谢材料之OLEDs 在製本發明之選择主及/或摻雜劑材料並將其加入OLEE) 中之此等特殊具饉實例中,電洞輸送層包括N,N,-二笨基-N,N'-雙(3-甲基苯基),聨苯_44,_二胺(TpD),及電子 輸送層包括摻雜或未摻雜的參·(5-羥基喹喏啉)铝(Alx3)或 接雜或未接推的Alq3。 電洞輸送材料TPD及電子輸送材料八43和^1〜係根據文 獻步驟合成,且在使用前昇華。 -53- 未紙張尺度適用中國國家標準(CNS ) Α4規格(21〇X 297公缝) (請先閲讀背面之注意事項再填寫本頁)Ijl. EELE with an organic free radical containing electric transport layer 1. A single heterogeneous structure containing organic free radicals Printed by the Ministry of Economic Affairs Central Standards Bureau Shellfisher Consumer Cooperative Co., Ltd. The transparent substrate is pre-coated with about 15 ohms / Square sheet resistance indium tin sulphide (ITO) layer. The substrate can be ultrasonically washed in a detergent, then washed in deionized water, 1,13-trifluoroethane, acetone, and formazan, and dried in pure nitrogen between steps. . The clean, dry substrate is then transferred to the aerial deposition system. Then it can be used at high altitude (<2xl0'6 Thor) -52- This paper size applies Chinese national standard f (CNS (210X297 mm) A7 -------- B7 V. Description of invention (% ) All organic and metal depositions are performed under the policy of the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. The deposition is performed at a nominal deposition rate of 2-4 Angstroms per second via thermal evaporation from a Ta crucible equipped with a baffle. Layer vapor deposition of approximately 350 angstroms of N, N, -diphenyl-N, N'-bis (3-methylphenyl) 1-1 · amidine-4,4'-diamine (TPD) On a clean ITO substrate. A sample of M (C5Ph5) 2 (where M can be Ge or Pb) can then be heated to about 250eC to release Cp *. It can be deposited in layers above the TPd film. The final thickness can be about 400 Angstroms. ”Then, it can be co-evaporated from individual Ta boat m (b0at) to deposit a national array of about 250: 1 Mg: Ag atomic ratio. .Ag layer can be deposited with a thickness of 50 angstroms and oxidized by the atmosphere of _ # pole. The double heterogeneous structure of the base j -V »·;; The double inhomogeneity can be made by including an individual emitting layer, this individual emitting layer can Become a hetero- or undoped para- (8-hydroxyquinoline) aluminum Alq3. The double heterogeneous structure can be prepared essentially as described for a single heterogeneous structure, except after depositing the TPD layer and after depositing organic Individual emissive layers of Alq3 are deposited before the radical layer. OLEDs that select the host material and / or doped materials are used in the preparation of the present invention to select the host and / or dopant materials and add them to the OLE). The hole transporting layer includes N, N, -dibenzyl-N, N'-bis (3-methylphenyl), toluene-44, _diamine (TpD), and the electron transporting layer includes doping. Or un-doped para- (5-hydroxyquinoxaline) aluminum (Alx3) or doped or un-doped Alq3. The hole transporting material TPD and the electron transporting material 4343 and ^ 1 ~ are synthesized according to the literature steps, and are sublimated before use. -53- Chinese paper standard (CNS) Α4 specification (21〇X 297 cm) is applicable for unpaper size (Please read the precautions on the back before filling this page)
A7 B7五、發明説明(51 ) 經濟部中央標準局員工消費合作社印装 摻锥劑C60係購自南方化學品集两(Southern Chemical Group),LLC,且以收到狀態使用。 化學式XI之雙酚方形酸鑕摻雜劑及靛藍染料化合物摻雜 劑係購自艾鉅化學品公句,且分別經弄華兩次而得纯的綠 色及紫色結晶材料。 參-(5-羥基喹喏啉)鋁(Alx3)係經由將參異丙醇鋁與5-羥 基喹喏啉在異丙繂中在氬氣下反應而製備得。異丙醇係於 使用前在CaH2上乾燥。用於反應之配位子的量係稍過量。 將異丙醇混合物在氬氣下迴流一俩半小時,並經由旋轉蒸 發分離橙色產物。 將由將0.2克Ga(N03)3 · χΗ20之200毫升水容液舆過量 的纪位子之1%醇溶液在60eC下混合,接著再加入10%氬 氧化銨以使溶液稍呈鹼性,而形成參(5-羥基喹喏啉)鎵 (Gax3)。製得橙色沉撅物,及於冷卻後,將其濾出。Gax3 之製備係類似於Spectrochimica Acta,1956, Vol. 8, pp.1-8所説明。 關於試劑,5-羥基嗤喏啉係根據S.K. Freeman,P.E. Spoerri,有機化學期刊(J· Org. Chem.),1951, 16, 438 製備得;參異丙酵鋁(99.99%纯度)及〇汪(:^〇3)0112〇 (99.999%純度)係購自艾鉅化學品公司;及異丙醇係購自 费雪科學公司(Fisher Scientific)。 ITO/硼矽酸賁基材(1〇〇歐姆/平方)係使用操準步樣製儀得 。所有化學品係於各種艇舟皿中抵抗加熱》音先在自1至4埃 /秒之速率下沉積TPD。厚度典型上係控制於約3〇〇埃。 ί Λ1 ^-- . · C , : (請先閱讀背面之注意事項再填寫本頁) 訂A7 B7 V. Description of the invention (51) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs The cone blender C60 was purchased from Southern Chemical Group, LLC, and was used in the received state. The bisphenol square acid osmium dopant and the indigo dye compound dopant of chemical formula XI were purchased from Ai Ju Chemical Co., Ltd. and were treated twice to obtain pure green and purple crystalline materials. Phenyl- (5-hydroxyquinoline) aluminum (Alx3) is prepared by reacting aluminum paraisopropoxide with 5-hydroxyquinoline in isopropylhydrazone under argon. Isopropanol was dried on CaH2 before use. The amount of ligand used for the reaction is slightly excessive. The isopropanol mixture was refluxed under argon for one and a half hours, and the orange product was isolated via rotary evaporation. A mixture of 0.2 g of Ga (N03) 3 · χΗ20 in 200 ml of water-containing solution and an excess of 1% alcohol solution at 60eC was added, and then 10% ammonium argon oxide was added to make the solution slightly alkaline to form Ginseng (5-hydroxyquinoline) gallium (Gax3). An orange sinker was obtained, and after cooling, it was filtered off. The preparation of Gax3 is similar to that described in Spectrochimica Acta, 1956, Vol. 8, pp. 1-8. Regarding reagents, 5-hydroxyxanthroline was prepared in accordance with SK Freeman, PE Spoerri, Journal of Organic Chemistry (J. Org. Chem.), 1951, 16, 438; reference isopropionate aluminum (99.99% purity), (: ^ 〇3) 0112〇 (99.999% purity) was purchased from Aiju Chemical Company; and isopropyl alcohol was purchased from Fisher Scientific. The ITO / rhenium borosilicate substrate (100 ohms / square) was obtained using a precision step sampler. All chemicals are resistant to heating in various boats and vessels. TPD is first deposited at a rate of from 1 to 4 Angstroms per second. The thickness is typically controlled at about 300 Angstroms. ί Λ1 ^-. · C,: (Please read the notes on the back before filling this page) Order
C • 54- 本紙張尺度適用中國國家揉準(CMS ) A4規格(210X297公釐〉 A7 B7 經濟部中央橾隼局貝工消費合作社印製 五、發明説明(52 ) 將電子輸送層(Alq3、Alx3)掺雜各種染料(c6<)、雙酚方 形酸鑌染料及化學式IX之靛蔹染料化合物)。典型上,摻 離劑係先在基材被蓋住的情沉下蒸發《於摻雜劑之速率穩 定後,在指定速率下蒸發主材料。然後將基材上之復蓋打 開,並在期望濃度下沉積主材科及賓材科β摻雜劑之速率 一般爲0.1-0.2埃/秒。此層之總厚度係控制在約45〇埃。 然後將基材釋放至空氣,並直接將光軍置於基材上。光 軍係由不游麵板製成’且包括直徑0.25、0.5、0.75、及 1.0毫米之孔洞。然後將基材放回眞空中以供進一步塗布。 在一般爲2.6埃/秒之速率下共同沉積鎂及銀。Mg:Agi 比自7:1變化至12:1 »此層之厚度典型上约爲5〇〇埃。最後 ,在1至4埃/秒間之速率下沉積1〇〇〇埃Ag。 測量此等OLED之I-V特性,且對摻雜及来摻雜的Α1χ3將 其示於圈13。具有及不具有掺雜劑之結果的緊密相似性, 顧示摻雜劑並不會擾亂裝置之電性質。 對於包含Alqs(作爲主材料,具有及不具有相同的 料摻雜劑,其中在主材料舆摻雜劑之閼的能量配合差)之發 射電子輸送層的OLED,幾乎所有的此發射皆係得自。 之化合物之,其中M=Ga 將4·羥基吡唑幷[3,4-d]嘧啶之〇 25克樣品溶解於2 5毫 井之1.1M NaOH水溶液中。將經由將〇 114克之硝酸鎵 解於1.5毫升水中所製儀得之溶液緩慢加至Na〇H溶液 加入確酸鎵時形成㈣物過遽分離白、沉擬物,^ 5毫升等份之6轉洗務兩次,並空氣乾燥。分離出之產物^ 55 本紙张尺度制中關“_ (⑽)A4規格(17〇^297^^~ (請先閔讀背面之注意事項再填寫本頁) 裝. 訂 五、發明説明(53 ) A7 B7 經濟部中央標準局員工消费合作社印製 在250毫微米下激發時具有在390毫微米下之發射最大值。 VI.化學式XIII之化合物之製備 1.參(4-乙決基笨基)胺 經由將1.26克(0.0225莫耳)溶解於甲缚中而製餚得〖〇11 之水性溶液。將KOH溶液加至經由將2.00克(〇·〇〇38莫耳) 加至100毫升四氩呋喃(THF)中所製備得之參(4·三甲基發 烷基乙块基苯基)胺之溶液中,而產生检色溶液,將其在室 溫下攪拌3小時。經由將反應混合物過濾通過梦蓬土 (Ce】ite),而移除所生成的少量橙色沉澱物。以兩份1〇毫 升份量的THF洗滌矽藻土《在眞空中將溶劑自結合濾液移 除,而留下黏性的灰掠-檢色殘餘物。以50毫升甲薄研製殘 餘物,並在室溫下再多攪拌1小時。 製得相當於化學之產物的橙色粉末,將其收集, 以25毫升份量的戊燒洗務,並於眞空中乾燥。以類似方式 由濾液製得兩份额外產物,而提供0.746克(63%)之總產量 。化合物在346毫微米之教發波長下的發射特性如下: 發射(溶液):430nm 發射(固體):517nm 2_麥(4-三甲基矽烷基乙块基笨基)胺之鏖傕 [N(C6H4CCSi(CH3)3] 將100毫升之场克(Schenk)燒叛裝入1.8克之三甲基梦燒 基乙炔、15毫升之二乙胺、2.0克之參(4-溴苯基)胺、〇 59 克之PdCl:、〇」75克之三苯膦及〇.〇32之4化銅(I”。將 反應混合物加熱避流24小時》於眞空中移除溶劑,並以7〇 -56- 本紙張尺度適用中國國家榡準(CNS ) A4規格(210X297公缝) m· i n^— fluff I * * c :- (請先閲讀背面之注意事項再填寫本頁}C • 54- This paper size is applicable to the Chinese National Standard (CMS) A4 (210X297 mm) A7 B7 Printed by the Central Government Bureau of the Ministry of Economic Affairs Shellfish Consumer Cooperatives V. Description of the invention (52) The electronic transport layer (Alq3, Alx3) is doped with various dyes (c6 <), bisphenol square acid fluorene dye and indigo fluorene dye compound of chemical formula IX). Typically, the dopant is first evaporated under the condition that the substrate is covered. After the dopant rate stabilizes, the main material is evaporated at the specified rate. The cover on the substrate is then opened, and the rate of deposition of the β-dopants of the main material family and the guest material family at the desired concentration is generally 0.1-0.2 angstroms / second. The total thickness of this layer is controlled to about 45 Angstroms. The substrate was then released into the air and the light army was placed directly on the substrate. The Light Army Department is made of indeterminate panels and includes holes with diameters of 0.25, 0.5, 0.75, and 1.0 mm. The substrate is then placed back into the air for further coating. Magnesium and silver are co-deposited at a generally 2.6 Angstrom / second rate. Mg: Agi ratio varies from 7: 1 to 12: 1 »The thickness of this layer is typically about 500 Angstroms. Finally, 1000 Angstroms Ag was deposited at a rate between 1 and 4 Angstroms / second. The I-V characteristics of these OLEDs were measured, and they are shown in circle 13 for the doped and future doped A1χ3. The close similarity of the results with and without the dopant shows that the dopant does not disturb the electrical properties of the device. For OLEDs containing Alqs (as the main material, with and without the same material dopant, where the energy coordination of the main material and the dopant is poor), almost all of this emission is obtained from. Among the compounds, M = Ga dissolves a 25-gram sample of 4 · hydroxypyrazolidine [3,4-d] pyrimidine in a 1.1 M NaOH aqueous solution in a 25-milliwell well. A solution prepared by dissolving 114 g of gallium nitrate in 1.5 ml of water was slowly added to the NaOH solution, and the gallium was formed when the gallium acid was added. The white and precipitates were separated, ^ 5 ml aliquots of 6 Turn the wash twice and air dry. Separated products ^ 55 Zhongguan "_ (⑽) A4 size (17〇 ^ 297 ^^ ~ (please read the precautions on the back before filling out this page). Packing. Order 5. Description of the invention (53 ) A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs has an emission maximum at 390 nm when excited at 250 nm. VI. Preparation of compounds of formula XIII 1. Ref. (4-Ethylbenzyl Amine was prepared by dissolving 1.26 g (0.0225 mole) in formazan to obtain an aqueous solution of 〇11. The KOH solution was added to 100 ml of 2.00 g (0.038 mole) by adding In a solution of ginseng (4 · trimethylalkylidenephenylphenyl) amine prepared in argon furan (THF), a color detection solution was generated, which was stirred at room temperature for 3 hours. The mixture was filtered through Cebonite to remove a small amount of orange precipitate. The diatomaceous earth was washed with two 10 ml portions of THF. The solvent was removed from the combined filtrate in the air while leaving Sticky gray-sweep-color check residue. Triturate the residue with 50 ml of nail polish and stir for an additional 1 hour at room temperature. An orange powder equivalent to the chemical product was prepared, collected, washed in 25 ml portions of pentamidine, and dried in the air. Two portions of the external product were prepared from the filtrate in a similar manner to provide 0.746 g ( 63%) of the total yield. The emission characteristics of the compound at a wavelength of 346 nanometers are as follows: Emission (solution): 430nm Emission (solid): 517nm 2-Methyl (4-trimethylsilylethylbenzyl) ) Amidine [N (C6H4CCSi (CH3) 3] 100 ml of Schenk) was charged with 1.8 g of trimethylmenthyl acetylene, 15 ml of diethylamine, 2.0 g of ginseng (4- Bromophenyl) amine, 0.059 grams of PdCl :, 75 grams of triphenylphosphine, and 0.032 of copper (I). The reaction mixture was heated to avoid flowing for 24 hours. The solvent was removed in the air, and 7〇-56- This paper size applies to China National Standard (CNS) A4 (210X297 cm) m · in ^ — fluff I * * c:-(Please read the precautions on the back before filling this page}
•1T• 1T
J 五、發明説明(54 ) A7 B7 經濟部中央橾隼局員工消费合作社印製 毫升苯,接著再以70毫升乙醚萃取殘餘物。將兩有機萃取 液遇濾通過氧化鋁,結合,龙於眞空中移除溶劑。所得_ 髏具有155-158eC之熔點,且類現的蓝色熒光。在255或 350毫微米下之激發產生以402毫微米爲中心之發光。 VII.含根拔化學式I之發射材料之OLED之Μ備 將透明基材(例如破璣或塑膠)預塗布具有约15歐姆/平方 之薄片電阻的鉬易氧化物(ΙΤΟ)層。基材可經由於去離予 水、1,1,1-三氣乙烷、丙酮及甲醇中徹底滌洗而清潔,且 在各步驟之間在衅氮氣中乾燥。然-後將清潔的乾燥基材轉 移至眞空沉積系統。接著可在高眞空(<2 X 10'6托爾)下進 行所有有機及金屬沉積》沉積係在2-4埃/秒之標稱沉積速 率下經由自設有擋板的Ta坩堝热蒸發而進行》首先,可將 大約350埃之N,N,-二苯基-Ν,Ν·-雙(3-甲基苯基)1,Γ-獬苯-4,4*-二胺(TPD)之層蒸氣沉積於清潔遇的ΙΤΟ基材上。然 後將根據化學式XII之化合物之樣品及選定的螢光染科於 個別的Ta舟皿中加熟,以在TPD薄膜上方沉積薄膜,其爲 0.1-10莫耳百分比染料在根據化學式又^之接收化合物中 之混合物。OLED之發射顏色將由染科本身之發光性質所 指示,且可經由染料之遴當選擇而橫跨整個可見光譜。此 根捸本發明之混合薄膜係沉積至約400埃之厚度》接著可 經由自個別的Ta舟m共同蒸發,而沉積大約i〇:l Mg:Ag 比之圓形0.25毫米直徑1000埃電極的啐列β然後可加入 500埃厚之Ag層,以抑制電極之大氣氧化。' . iL~~.·---T ilί ; c ί靖先聞讀背面之注意事一p再填两本頁) 訂 — ^ l·L. -57- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ____B7 五、發明説明(55 ) VIII.舍根璩化學式XIII之發射材料之OLED之製備 經濟部中央標隼局員工消费合作社印製 將透明基材(例如玻璃或塑膠)預塗布具有約15歐坶/平方 之薄片電阻的銦易氧化物(ITO)層》基材可經由於去離子 水、1,1,1-三氣乙烷、丙酮及甲酵中徹底滌洗而清潔,且 在各步驟之間在純氮氣中乾燥。然後將清潔的乾燥基材轉 移至眞空沉積系統。接著可在高眞空(<2 X 10‘6托爾)下進 行所有有機及金屬沉積《沉積係在2-4埃/秒之標稱沉積速 率下經由自設有擋板的Ta坩堝熟蒸發而進行《首先,將根 據化學式XIII之化合物之樣品及選定旳螢光染料於個別的 Ta舟皿中加热,以在清潔遇的基材上方沉積薄膜,其爲 0.1-10莫耳百分比染科在根據化合物π中之混合物。 OLED之發射顏色將由染料本身之發光性質所指示,且可 經由染料之適當選琿而橫跨整個可見光譜。此根樣本發明 之混合薄膜係沉積至約400埃之厚度。其次沉積遑當的電 洞阻隔材料之薄膜,諸如100埃之隹二沒街生物(例如2·(4· 硪苯基)-5-(4-第二丁笨基)_1,3,4-噁二唑),接著再沉積電 子輸送材料’諸如參(8-幾基♦琳)鋁之薄膜(約3〇〇埃)。接 著可經由自個別的Ta舟皿共同蒸發,而沉積大約1〇:1 Mg.Ag比之圆形0.25毫米直徑1000埃電柽的陣列β然後可 加入500埃厚之Ag層,以抑.制電極之大氣氧化β 熟悉技藝人士可知曉對本發明之各種具禮實例的某些修 改,此等修改係意圈由随附之申請專利範園的精神及範 所涵蓋。 、 •58- ^紙張纽適财®财料(CNS ) Α4ί^7_2Ϊ0χ297公釐7J V. Description of the invention (54) A7 B7 The benzene was printed by the Consumer Cooperative of the Central Government Bureau of the Ministry of Economic Affairs, and then the residue was extracted with 70 ml of ether. The two organic extracts were filtered through alumina, combined, and the solvent was removed in the air. The resulting skull has a melting point of 155-158eC and has a blue-like fluorescence. Excitation at 255 or 350 nm produces a luminescence centered at 402 nm. VII. Preparation of OLEDs containing an emissive material of the radical formula I A transparent substrate (such as a chip or plastic) is pre-coated with a molybdenum oxide (ITO) layer having a sheet resistance of about 15 ohms / square. The substrate can be cleaned by thorough scrubbing in deionized water, 1,1,1-trifluoroethane, acetone, and methanol, and dried in degassing nitrogen between steps. Then-transfer the clean, dry substrate to the aerial deposition system. All organic and metal depositions can then be performed at high altitude (< 2 X 10'6 Tor). The deposition system is thermally evaporated at a nominal deposition rate of 2-4 Angstroms / second via a Ta crucible with baffles. First, about 350 angstroms of N, N, -diphenyl-N, N · -bis (3-methylphenyl) 1, Γ-methylbenzene-4,4 * -diamine (TPD A layer of vapor is deposited on the cleaned ITO substrate. A sample of the compound according to chemical formula XII and the selected fluorescent dyeing family are then cooked in individual Ta boats to deposit a thin film on top of the TPD film, which is 0.1-10 mol% of the dye. A mixture of compounds. The emission color of the OLED will be indicated by the luminescent properties of the dye department itself, and can be selected across the entire visible spectrum through the selection of dyes. This hybrid thin film of the present invention is deposited to a thickness of about 400 Angstroms, and then can be co-evaporated from individual Ta boats to deposit about 100: 1 Mg: Ag ratio of a circular 0.25 mm diameter 1000 Angstrom electrode. Queue β can then add a 500 Angstrom Ag layer to suppress atmospheric oxidation of the electrode. '. iL ~~. · --- T ilί; c ί Jing first read and read the notes on the back one p and then fill in two pages) Order — ^ l·L. -57- This paper size applies the Chinese National Standard (CNS ) A4 specification (210X297 mm) ____B7 V. Description of the invention (55) VIII. Preparation of OLEDs with the chemical formula XIII of Scion Gen. Printing of transparent substrates (such as glass or plastic) ) Pre-coated indium oxide (ITO) layer with a sheet resistance of about 15 ohms / square. The substrate can be thoroughly washed in deionized water, 1,1,1-three gas ethane, acetone, and formic acid. Wash and clean, and dry under pure nitrogen between steps. The clean, dry substrate is then transferred to an airborne deposition system. All organic and metal depositions can then be performed at high altitude (< 2 X 10'6 Tor). The deposition system is cooked through a Ta crucible with a baffle at a nominal deposition rate of 2-4 Angstroms / second. The first step is to heat a sample of the compound according to formula XIII and a selected fluorene fluorescent dye in an individual Ta boat to deposit a thin film over the cleaned substrate, which is 0.1-10 mole percent. Based on the mixture in compound π. The emission color of the OLED will be indicated by the luminescent properties of the dye itself, and can be spanned across the entire visible spectrum through proper selection of the dye. The hybrid film invented by this sample was deposited to a thickness of about 400 Angstroms. Secondly, deposit a thin film of a hole-blocking material, such as 100 angstroms of bimorphs (for example, 2 · (4 · 硪 phenyl) -5- (4-second butylbenzyl) _1,3,4- Oxadiazole), followed by the deposition of an electron-transporting material, such as a thin film (about 300 angstroms) of aluminum (8-kiloyl) aluminum. Then it can be co-evaporated from individual Ta boats to deposit approximately 10: 1 Mg.Ag than a circular 0.25 mm diameter array of 1000 angstroms. Then an 500 Å thick Ag layer can be added to suppress the Atmospheric oxidation of the electrode. Those skilled in the art will be aware of certain modifications to various courtesy examples of the present invention. These modifications are intended to be covered by the spirit and scope of the accompanying patent application park. , • 58- ^ Paper Newcastle® Financial Materials (CNS) Α4ί ^ 7_2Ϊ0χ297mm7
Claims (1)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US77181596A | 1996-12-23 | 1996-12-23 | |
US08/772,332 US5834893A (en) | 1996-12-23 | 1996-12-23 | High efficiency organic light emitting devices with light directing structures |
US08/774,119 US6046543A (en) | 1996-12-23 | 1996-12-23 | High reliability, high efficiency, integratable organic light emitting devices and methods of producing same |
US08/774,120 US5811833A (en) | 1996-12-23 | 1996-12-23 | Electron transporting and light emitting layers based on organic free radicals |
US08/928,800 US5981306A (en) | 1997-09-12 | 1997-09-12 | Method for depositing indium tin oxide layers in organic light emitting devices |
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TW385620B true TW385620B (en) | 2000-03-21 |
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TW86119632A TW385620B (en) | 1996-12-23 | 1998-03-07 | An organic light emitting device containing a protection layer |
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