TW377511B - Memory cell structure of COB and the method of manufacturing the same - Google Patents

Memory cell structure of COB and the method of manufacturing the same

Info

Publication number
TW377511B
TW377511B TW087101042A TW87101042A TW377511B TW 377511 B TW377511 B TW 377511B TW 087101042 A TW087101042 A TW 087101042A TW 87101042 A TW87101042 A TW 87101042A TW 377511 B TW377511 B TW 377511B
Authority
TW
Taiwan
Prior art keywords
cob
contact hole
forming
storage electrode
memory cell
Prior art date
Application number
TW087101042A
Other languages
Chinese (zh)
Inventor
Jian-Mai Song
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW087101042A priority Critical patent/TW377511B/en
Application granted granted Critical
Publication of TW377511B publication Critical patent/TW377511B/en

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Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

This invention discloses a type of memory cell structure of COB and the method of manufacturing the same, which has applications in high density DRAM forming COB. The process thereof includes: (1) creating a straight bit line connecting via plugs of lower layer of polysilicon, which in turn connects to source and drain of lower layers; (2) forming a contact hole on storage electrode of capacitor penetrating the insulating layer and straight bit line; (3) forming a storage electrode on top of the upper insulating layer after the contact hole is formed on passivated storage terminal of silicon nitride sidewall; overlapping the contact hole of storage electrode and in contact with another via plug of another layer of polysilicon.
TW087101042A 1998-01-26 1998-01-26 Memory cell structure of COB and the method of manufacturing the same TW377511B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW087101042A TW377511B (en) 1998-01-26 1998-01-26 Memory cell structure of COB and the method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087101042A TW377511B (en) 1998-01-26 1998-01-26 Memory cell structure of COB and the method of manufacturing the same

Publications (1)

Publication Number Publication Date
TW377511B true TW377511B (en) 1999-12-21

Family

ID=57942094

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087101042A TW377511B (en) 1998-01-26 1998-01-26 Memory cell structure of COB and the method of manufacturing the same

Country Status (1)

Country Link
TW (1) TW377511B (en)

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees