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Application filed by Vanguard Int Semiconduct CorpfiledCriticalVanguard Int Semiconduct Corp
Priority to TW087101042ApriorityCriticalpatent/TW377511B/en
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Publication of TW377511BpublicationCriticalpatent/TW377511B/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Semiconductor Memories
(AREA)
Abstract
This invention discloses a type of memory cell structure of COB and the method of manufacturing the same, which has applications in high density DRAM forming COB. The process thereof includes: (1) creating a straight bit line connecting via plugs of lower layer of polysilicon, which in turn connects to source and drain of lower layers; (2) forming a contact hole on storage electrode of capacitor penetrating the insulating layer and straight bit line; (3) forming a storage electrode on top of the upper insulating layer after the contact hole is formed on passivated storage terminal of silicon nitride sidewall; overlapping the contact hole of storage electrode and in contact with another via plug of another layer of polysilicon.
TW087101042A1998-01-261998-01-26Memory cell structure of COB and the method of manufacturing the same
TW377511B
(en)