TW375818B - Process for preparing a dual damascene structure on substrate - Google Patents
Process for preparing a dual damascene structure on substrateInfo
- Publication number
- TW375818B TW375818B TW087109345A TW87109345A TW375818B TW 375818 B TW375818 B TW 375818B TW 087109345 A TW087109345 A TW 087109345A TW 87109345 A TW87109345 A TW 87109345A TW 375818 B TW375818 B TW 375818B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon nitride
- dielectric
- substrate
- layer
- selectively etching
- Prior art date
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A process for preparing dual damascene on substrate is disclosed; first forming a first dielectric layer on substrate, a first silicon nitride layer thereon, a second dielectric layer thereon, and a second silicon nitride thereon respectively; selectively etching the second silicon nitride to expose part surface of the second dielectric; selectively etching the exposed part of second dielectric until reaching the first silicon nitride; selectively etching the first and the second silicon nitride layers to expose part surface of the first and the second dielectric; finally selectively etching the exposed part of the first and the second dielectric to form a contact hole on the substrate, and at the same time, an opening on the first silicon nitride; subsequently, creating an adhesive layer along sidewall and bottom of the contact hole and the opening, and on the second silicon nitride, and then a metal layer thereon to backfill the contact hole and the opening; finally, applying CMP to remove the metal layer adhesive layer, and second silicon nitride formed on the second dielectric layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087109345A TW375818B (en) | 1998-06-12 | 1998-06-12 | Process for preparing a dual damascene structure on substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087109345A TW375818B (en) | 1998-06-12 | 1998-06-12 | Process for preparing a dual damascene structure on substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
TW375818B true TW375818B (en) | 1999-12-01 |
Family
ID=57941951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087109345A TW375818B (en) | 1998-06-12 | 1998-06-12 | Process for preparing a dual damascene structure on substrate |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW375818B (en) |
-
1998
- 1998-06-12 TW TW087109345A patent/TW375818B/en not_active IP Right Cessation
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Legal Events
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MK4A | Expiration of patent term of an invention patent |