TW375818B - Process for preparing a dual damascene structure on substrate - Google Patents

Process for preparing a dual damascene structure on substrate

Info

Publication number
TW375818B
TW375818B TW087109345A TW87109345A TW375818B TW 375818 B TW375818 B TW 375818B TW 087109345 A TW087109345 A TW 087109345A TW 87109345 A TW87109345 A TW 87109345A TW 375818 B TW375818 B TW 375818B
Authority
TW
Taiwan
Prior art keywords
silicon nitride
dielectric
substrate
layer
selectively etching
Prior art date
Application number
TW087109345A
Other languages
Chinese (zh)
Inventor
zhen-ye Shi
Yu-Hua Lee
James Wu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW087109345A priority Critical patent/TW375818B/en
Application granted granted Critical
Publication of TW375818B publication Critical patent/TW375818B/en

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Abstract

A process for preparing dual damascene on substrate is disclosed; first forming a first dielectric layer on substrate, a first silicon nitride layer thereon, a second dielectric layer thereon, and a second silicon nitride thereon respectively; selectively etching the second silicon nitride to expose part surface of the second dielectric; selectively etching the exposed part of second dielectric until reaching the first silicon nitride; selectively etching the first and the second silicon nitride layers to expose part surface of the first and the second dielectric; finally selectively etching the exposed part of the first and the second dielectric to form a contact hole on the substrate, and at the same time, an opening on the first silicon nitride; subsequently, creating an adhesive layer along sidewall and bottom of the contact hole and the opening, and on the second silicon nitride, and then a metal layer thereon to backfill the contact hole and the opening; finally, applying CMP to remove the metal layer adhesive layer, and second silicon nitride formed on the second dielectric layer.
TW087109345A 1998-06-12 1998-06-12 Process for preparing a dual damascene structure on substrate TW375818B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW087109345A TW375818B (en) 1998-06-12 1998-06-12 Process for preparing a dual damascene structure on substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087109345A TW375818B (en) 1998-06-12 1998-06-12 Process for preparing a dual damascene structure on substrate

Publications (1)

Publication Number Publication Date
TW375818B true TW375818B (en) 1999-12-01

Family

ID=57941951

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087109345A TW375818B (en) 1998-06-12 1998-06-12 Process for preparing a dual damascene structure on substrate

Country Status (1)

Country Link
TW (1) TW375818B (en)

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