Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co LtdfiledCriticalTaiwan Semiconductor Mfg Co Ltd
Priority to TW087100091ApriorityCriticalpatent/TW375791B/en
Application grantedgrantedCritical
Publication of TW375791BpublicationCriticalpatent/TW375791B/en
A process for producing a capacitor for integrated circuit in which after the forming the lower electrode of capacitor, titanium is deposited on the surface of said lower electrode to form a titanium silicide electrode film; then a fast thermal annealing with high temperature is applied to precipitate said titanium silicide into coarse semispherical chips so as to increase the surface of capacitor, and hence increase the capacitance of capacitor without affecting the integration of integrated circuit and without changing the original circuit layout structure.
TW087100091A1998-01-051998-01-05A process for producing capacitor for integrated circuit
TW375791B
(en)
Semiconductor integrated circuit device and process for producing the same a process for producing a semiconductor integrated circuit device, which is a process for producing a semiconductor integrated circuit device having a capacitive component.