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Application filed by Taiwan Semiconductor Mfg Co LtdfiledCriticalTaiwan Semiconductor Mfg Co Ltd
Priority to TW087105580ApriorityCriticalpatent/TW373304B/en
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This invention discloses a kind of method for producing lower layer electrode of capacitor, its procedure comprises: at first temperature to form a polycrystalline silicon layer free of impurity on a substrate; at second temperature to form polycrystalline silicon layer free of impurity on the polycrystalline silicon layer free of impurity; and at third temperature to form a non-polycrystalline silicon layer on the said multi-crystal silicon layer free of impurity, and at fourth temperature to simultaneously process thermal de-heat treatment, making the said non-crystal silicon layer to transform into particle polycrystalline silicon layer.
TW087105580A1998-04-131998-04-13Method for producing lower layer electrode of capacitor
TW373304B
(en)
Method for removing defects by ion implantation using medium temperature oxide layer the invention relates to a method for removing defects by ion implantation using medium temperature oxide layer