TW375677B - Method for calibrating the measurement of photoresist thickness - Google Patents

Method for calibrating the measurement of photoresist thickness

Info

Publication number
TW375677B
TW375677B TW088108024A TW88108024A TW375677B TW 375677 B TW375677 B TW 375677B TW 088108024 A TW088108024 A TW 088108024A TW 88108024 A TW88108024 A TW 88108024A TW 375677 B TW375677 B TW 375677B
Authority
TW
Taiwan
Prior art keywords
photoresist
thickness
calibration
silicon substrate
line width
Prior art date
Application number
TW088108024A
Other languages
Chinese (zh)
Inventor
Han-Min Hsieh
ren-zhi Lv
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW088108024A priority Critical patent/TW375677B/en
Application granted granted Critical
Publication of TW375677B publication Critical patent/TW375677B/en

Links

Abstract

A method for calibrating the measurement of photoresist thickness, characterized by first applying a layer of photoresist on silicon substrate by spin coating, whereby thickness interval of said calibration photoresist can be estimated by the rotating speed of silicon substrate, then measuring line width of said photoresist after development, and then utilizing known swing curve to determine the accurate thickness of said calibration photoresist based on the dimension of line width of developed photoresist and thickness interval. Subsequently, using silicon substrate with coated calibration photoresist as calibration chip to calibrate thin-film thickness gage, and finally, using the calibrated thin-film thickness gage to determine the thickness of photoresist to be measured. As such, each time photoresist coating is carried out, the method provided herein can be employed to measure the accurate photoresist thickness and determine energy required for exposure, such that it will enhance the accuracy of line width of the component and product yield.
TW088108024A 1999-05-18 1999-05-18 Method for calibrating the measurement of photoresist thickness TW375677B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW088108024A TW375677B (en) 1999-05-18 1999-05-18 Method for calibrating the measurement of photoresist thickness

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW088108024A TW375677B (en) 1999-05-18 1999-05-18 Method for calibrating the measurement of photoresist thickness

Publications (1)

Publication Number Publication Date
TW375677B true TW375677B (en) 1999-12-01

Family

ID=57941910

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088108024A TW375677B (en) 1999-05-18 1999-05-18 Method for calibrating the measurement of photoresist thickness

Country Status (1)

Country Link
TW (1) TW375677B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107883866A (en) * 2016-09-30 2018-04-06 上海微电子装备（集团）股份有限公司 A kind of optical measuring device and method
TWI677028B (en) * 2016-01-30 2019-11-11 聯華電子股份有限公司 Method for improving etch loading effect

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677028B (en) * 2016-01-30 2019-11-11 聯華電子股份有限公司 Method for improving etch loading effect
CN107883866A (en) * 2016-09-30 2018-04-06 上海微电子装备（集团）股份有限公司 A kind of optical measuring device and method
CN107883866B (en) * 2016-09-30 2019-11-26 上海微电子装备（集团）股份有限公司 A kind of optical measuring device and method

Similar Documents

Publication Publication Date Title
CN103163077B (en) Rotary device type spectroscopic ellipsometers systematic parameter calibration steps
US9255780B2 (en) Method for measuring thickness of film on wafer edge
TWI275419B (en) Thickness measuring method for organic coating film on metal surface
TW374219B (en) Method for testing overlay occurring in a semiconductor device
WO2003054475A3 (en) Parametric profiling using optical spectroscopic systems
JP2010286483A5 (en)
WO2005081069A8 (en) Method to determine the value of process parameters based on scatterometry data
WO2010053924A3 (en) In-line wafer thickness sensing
WO2011151585A3 (en) Process and device for measuring the thickness of a coating layer on a running strip.
TW200745509A (en) Coating layer thickness measurement mechanism and coating layer forming apparatus using the same
CN103837750B (en) Temperature drift and time drift real-time difference compensation method for electric-field sensor
TW375677B (en) Method for calibrating the measurement of photoresist thickness
CN114323548A (en) Calibration method for pressure-sensitive paint coating suitable for different reference states
CN102735152A (en) Calibrating and measuring method of microwave absorbing coating thickness measuring instrument
CN1971248A (en) Real-time measuring device for high precision thin-film stress and measuring method
CN104697712A (en) Inspection method for mass center of revolving workpiece
TWI456677B (en) Measurement system, method and lithographic apparatus
CN201191224Y (en) Infrared temperature measuring paste
JP2005172646A (en) Drying characteristic detection method and its device
JPS6435306A (en) Incidence angle determining method for refractive index and film thickness measurement
CN101545819A (en) Method of calibrating PVDF voltage coefficient when measuring gauge pressure of rotary body
JPH0676922B2 (en) Radiation temperature measuring device
Zapien et al. Application of spectral and temporal weighted error functions for data analysis in real-time spectroscopic ellipsometry
JPS5563708A (en) Thickness measuring method for anticorrosive film
CN106441649A (en) Pressure locating and measuring method used for connected piezoresistive sensor array

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees