TW374935B - Method of elimination of edge of backing film off a wafer and the prescription of wet-etching liquid acid used on the silicon wafer surface oxidized film - Google Patents
Method of elimination of edge of backing film off a wafer and the prescription of wet-etching liquid acid used on the silicon wafer surface oxidized filmInfo
- Publication number
- TW374935B TW374935B TW087109344A TW87109344A TW374935B TW 374935 B TW374935 B TW 374935B TW 087109344 A TW087109344 A TW 087109344A TW 87109344 A TW87109344 A TW 87109344A TW 374935 B TW374935 B TW 374935B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon wafer
- etching liquid
- edge
- wafer
- film
- Prior art date
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Weting (AREA)
Abstract
The present invention relates to a sort of method of elimination of edge of backing film off a wafer based on the Bernoulli principle, including roughly the provision of a chuck for carrying the silicon wafer, a conduit located on top of the silicon wafer, through which the etching liquid is dripped onto the upper surface of the silicon wafer to turn said carrier at high speed (referred to as bearing tray in this invention), which rotation would drive the silicon wafer to turn, making the etching liquid be driven onto the edge of the silicon wafer, which upper surface having a film formed and distributed onto the upper surface of the silicon wafer and the etching liquid would be, based on the Bernoulli principle, carried by the etching liquid to the edge of the lower surface of the silicon wafer for etching thanks to the air flow injected from the vent of the bearing tray under the silicon wafer. Besides, this invention provides a wet etching liquid for use on the oxidized film on the surface of the wafer, consisting acetic acid, hydrofluoric acid, ammonium fluoride and H2O.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087109344A TW374935B (en) | 1998-06-12 | 1998-06-12 | Method of elimination of edge of backing film off a wafer and the prescription of wet-etching liquid acid used on the silicon wafer surface oxidized film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087109344A TW374935B (en) | 1998-06-12 | 1998-06-12 | Method of elimination of edge of backing film off a wafer and the prescription of wet-etching liquid acid used on the silicon wafer surface oxidized film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW374935B true TW374935B (en) | 1999-11-21 |
Family
ID=57941873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087109344A TW374935B (en) | 1998-06-12 | 1998-06-12 | Method of elimination of edge of backing film off a wafer and the prescription of wet-etching liquid acid used on the silicon wafer surface oxidized film |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW374935B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI582886B (en) * | 2016-01-12 | 2017-05-11 | 弘塑科技股份有限公司 | Device for wet treatment of single wafer |
| TWI634613B (en) * | 2017-12-27 | 2018-09-01 | 億力鑫系統科技股份有限公司 | Carrier disk |
| TWI840988B (en) * | 2022-10-06 | 2024-05-01 | 盛詮科技股份有限公司 | Wafer adsorption device |
-
1998
- 1998-06-12 TW TW087109344A patent/TW374935B/en active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI582886B (en) * | 2016-01-12 | 2017-05-11 | 弘塑科技股份有限公司 | Device for wet treatment of single wafer |
| TWI634613B (en) * | 2017-12-27 | 2018-09-01 | 億力鑫系統科技股份有限公司 | Carrier disk |
| TWI840988B (en) * | 2022-10-06 | 2024-05-01 | 盛詮科技股份有限公司 | Wafer adsorption device |
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