TW373262B - Method for cleaning metal film stuck inside film treating device - Google Patents
Method for cleaning metal film stuck inside film treating deviceInfo
- Publication number
- TW373262B TW373262B TW087106605A TW87106605A TW373262B TW 373262 B TW373262 B TW 373262B TW 087106605 A TW087106605 A TW 087106605A TW 87106605 A TW87106605 A TW 87106605A TW 373262 B TW373262 B TW 373262B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- treating device
- cleaning
- oxidizing
- metal film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
Abstract
This invention relates to a kind of method for cleaning metal film stuck inside film treating device; in other words, this invention relates to a kind of metal film which can beautifully remove metal copper etc inside film treating device, and it shall not generate particles and thin film peel off situation in the cleaning method. In the substrate surface of the film treating device 10, stock with metal film; after that, in the aforementioned film treating device 10, to implement the cleaning method; and the aforementioned cleaning method, it is by the following described. Operation to form the cleaning operation: oxidizing method, whereas the oxidizing operation, is used to make the processing film treating to stick to the said film treating device 10 with metal film 19 inside, to generate oxidizing effect, and to be produced to oxidized film; and to alternate the operations, is used for making the oxidized film, generating alternative work effect, and produced to be alternative substance; and sublimation operation, the said sublimation operation, is used form making the said alternative substance, to generate sublimation; following, and also set up the said cleaning work condition, for the said oxidizing operation, to be speed rate to decide step.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32042997A JP4049423B2 (en) | 1997-11-06 | 1997-11-06 | Method for cleaning attached metal film in film forming apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
TW373262B true TW373262B (en) | 1999-11-01 |
Family
ID=18121358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087106605A TW373262B (en) | 1997-11-06 | 1998-04-29 | Method for cleaning metal film stuck inside film treating device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4049423B2 (en) |
KR (1) | KR100327282B1 (en) |
TW (1) | TW373262B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI725194B (en) * | 2016-07-26 | 2021-04-21 | 日商中央硝子股份有限公司 | Etching method and etching device |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6284052B2 (en) * | 1998-08-19 | 2001-09-04 | Sharp Laboratories Of America, Inc. | In-situ method of cleaning a metal-organic chemical vapor deposition chamber |
JP2000345346A (en) * | 1999-05-31 | 2000-12-12 | Japan Pionics Co Ltd | Method for cleaning vaporization and supply device, and semiconductor manufacturing device |
US6352081B1 (en) * | 1999-07-09 | 2002-03-05 | Applied Materials, Inc. | Method of cleaning a semiconductor device processing chamber after a copper etch process |
JP4663059B2 (en) * | 2000-03-10 | 2011-03-30 | 東京エレクトロン株式会社 | Processing device cleaning method |
US6534413B1 (en) * | 2000-10-27 | 2003-03-18 | Air Products And Chemicals, Inc. | Method to remove metal and silicon oxide during gas-phase sacrificial oxide etch |
JP3527231B2 (en) * | 2002-07-05 | 2004-05-17 | 東京エレクトロン株式会社 | Cleaning method for substrate processing equipment |
AU2003244018A1 (en) * | 2002-07-05 | 2004-01-23 | Tokyo Electron Limited | Method of cleaning substrate-processing device and substrate-processing device |
US20040014327A1 (en) * | 2002-07-18 | 2004-01-22 | Bing Ji | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
WO2004073056A1 (en) * | 2003-02-13 | 2004-08-26 | Tokyo Electron Limited | Method for cleaning substrate processing apparatus and substrate processing apparatus |
US8298336B2 (en) | 2005-04-01 | 2012-10-30 | Lam Research Corporation | High strip rate downstream chamber |
JP5481547B2 (en) * | 2006-08-24 | 2014-04-23 | 富士通セミコンダクター株式会社 | Method for removing metal deposit, substrate processing apparatus, and recording medium |
US7476291B2 (en) * | 2006-09-28 | 2009-01-13 | Lam Research Corporation | High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation |
JP2011035119A (en) * | 2009-07-31 | 2011-02-17 | Tokyo Electron Ltd | Device and method for cleaning substrate |
JP5646190B2 (en) * | 2010-03-12 | 2014-12-24 | 東京エレクトロン株式会社 | Cleaning method and processing apparatus |
JP5707144B2 (en) | 2011-01-18 | 2015-04-22 | 東京エレクトロン株式会社 | Substrate processing apparatus dry cleaning method and metal film removal method |
JP5929386B2 (en) | 2012-03-22 | 2016-06-08 | セントラル硝子株式会社 | Dry cleaning method for metal film in film forming apparatus |
JP6142676B2 (en) | 2013-05-31 | 2017-06-07 | セントラル硝子株式会社 | Dry etching method, dry etching apparatus, metal film and device including the same |
JP6087236B2 (en) * | 2013-07-24 | 2017-03-01 | 東京エレクトロン株式会社 | Deposition method |
JP7379993B2 (en) * | 2019-09-20 | 2023-11-15 | 東京エレクトロン株式会社 | Etching equipment and etching method |
KR20230079204A (en) * | 2020-10-16 | 2023-06-05 | 샌트랄 글래스 컴퍼니 리미티드 | Wet etching method |
CN114618852B (en) * | 2022-05-17 | 2022-08-16 | 江苏浦贝智能科技有限公司 | Glue removing machine and glue removing method for semiconductor processing |
-
1997
- 1997-11-06 JP JP32042997A patent/JP4049423B2/en not_active Expired - Lifetime
-
1998
- 1998-04-29 TW TW087106605A patent/TW373262B/en not_active IP Right Cessation
- 1998-05-06 KR KR1019980016200A patent/KR100327282B1/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI725194B (en) * | 2016-07-26 | 2021-04-21 | 日商中央硝子股份有限公司 | Etching method and etching device |
US11282714B2 (en) | 2016-07-26 | 2022-03-22 | Central Glass Company, Limited | Etching method and etching device |
Also Published As
Publication number | Publication date |
---|---|
KR100327282B1 (en) | 2002-04-17 |
JP4049423B2 (en) | 2008-02-20 |
KR19990044727A (en) | 1999-06-25 |
JPH11140652A (en) | 1999-05-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |