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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW086115355ApriorityCriticalpatent/TW371781B/en
Priority to JP10009449Aprioritypatent/JP2947774B2/en
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Publication of TW371781BpublicationCriticalpatent/TW371781B/en
An improved etching process consists of the following procedures: providing a substrate, forming a metal silicide layer on the substrate; forming another oxide layer on the metal silicide layer; using etching gas precursor, including CHF3, CH4, Ar and CO, to proceed the etching steps and cut an opening on the oxide layer; then, using the same etching gas to proceed the over etching the mixture and the flow of the etching gas remain unchanged through the whole etching process and the etching selectivity of oxide to metal silicide can reach as high as the ratio of 110.
TW086115355A1997-10-181997-10-18Method for improving etching process
TW371781B
(en)